A welding type BN type ion door and its auxiliary fixture and ion door manufacturing method

Abstract

The present invention discloses a welding type BN type ion gate and its auxiliary clamp and a method for manufacturing the ion gate, belonging to the field of analytical instruments. The present invention discloses an ion gate, the ion gate is a BN type ion gate, the ion gate comprises a circular insulating substrate, a stamp hole a and a stamp hole b are arranged on the outer ring of the insulating substrate, the stamp hole a is connected to the metal circuit a, and the stamp hole b is connected to the metal circuit b; a pad A, a pad B, several pads a, several pads b, several pads c, and several pads d are arranged on one side of the insulating substrate, the pad A, the pad B, and the pad c are all connected to the metal circuit a; the pad b is connected to the metal circuit b. The BN type ion gate provided by the present invention has a compact size and low requirements for manufacturing technology, that is, it is suitable for small batch manual production and also suitable for mechanized mass production.

Description

Technical Field

[0001] The invention relates to a welding BN type ion gate and an auxiliary clamp thereof and a method for manufacturing the ion gate, belonging to the field of analytical instruments. Background Art

[0002] In ion mobility spectrometry, the working principle of the BN type ion gate is to use the radial electric field formed by two sets of coplanar metal wires perpendicular to the ion migration direction to achieve ion cluster cutting. There are many manufacturing methods at home and abroad, such as: mechanical wire winding method (patent application CN201410253929.5, CN200610075935.1), laser etching method (patent application CN201710375396.1), manual wire threading method (patent application CN201010511518.3, CN201110190302.6), etc. The mechanical wire winding method and the manual wire threading method are complex, time-consuming, and costly, and the quality of the ion gate is unstable. In the patent application CN201710375396.1, the laser etching method is used to make the ion gate. Since the front and rear sets of wire mesh are not on the same plane, there is ion discrimination, which affects the scope of application. The ion gate made by the laser etching method should be classified as a double-grid TP gate. Patent application CN202010739642.9 uses gluing, one-piece injection molding, or grooving to manufacture the ion gate, which ensures that the two sets of wires of the ion gate are on the same horizontal plane and is simple to process and manufacture. However, the glue used for bonding is difficult to choose, which sometimes has an adverse effect on the ion mobility spectrometry signal. Summary of the invention

[0003] In view of the above shortcomings, the present invention provides a welded BN type ion gate and its auxiliary clamp and an ion gate manufacturing method, focusing on solving the technical problem of fixing the BN type ion gate metal wire on the insulating substrate to ensure that the tensioned metal wire is on the same horizontal plane.

[0004] The first aspect of the present invention provides an ion gate, which is a BN type ion gate, and includes a circular insulating substrate, on the outer ring of the insulating substrate, a stamp hole a and a stamp hole b are axially symmetrically arranged, the stamp hole a is connected to the metal circuit a, and the stamp hole b is connected to the metal circuit b; one side of the insulating substrate is provided with a welding pad A, a welding pad B, a plurality of welding pads a, a plurality of welding pads b, a plurality of welding pads c, and a plurality of welding pads d, the welding pad A, the welding pad B, and the welding pad c are all connected to the metal circuit a; the welding pad b is connected to the metal circuit b; the connecting line of the welding pad A and the welding pad B passes through the center of the insulating substrate, and the connecting line coincides with the symmetry axis of the stamp hole a and the stamp hole b; the welding pad a and the welding pad b are respectively arranged on both sides of the symmetry axis. , the pads a are equidistantly arranged on the insulating substrate, the pads b are equidistantly arranged on the insulating substrate, the pads a and the pads b are arranged correspondingly, a metal wire a is arranged between the corresponding pads a and the pads b, and the metal wire a is perpendicular to the symmetry axis; the pads c and the pads d are respectively arranged on both sides of the symmetry axis, the pads c are equidistantly arranged on the insulating substrate, the pads d are equidistantly arranged on the insulating substrate, the pads c and the pads d are arranged correspondingly, a metal wire b is arranged between the corresponding pads c and the pads d, and the metal wire b is perpendicular to the symmetry axis, wherein a pad c is provided at the midpoint between adjacent pads a, and a pad d is provided at the midpoint between adjacent pads b.

[0005] Optionally, the metal wire a and the metal wire b are arranged in the same plane, and the distance from the metal wire a to the adjacent metal wire b is the same.

[0006] Optionally, the metal wire a and the metal wire b are thin, straight, hard stainless steel wires with a diameter of 0.2-0.05 mm.

[0007] Optionally, the insulating substrate is made of a material selected from polytetrafluoroethylene material, epoxy glass fiber material, PEEK material, and ceramic material.

[0008] Optionally, the insulating substrate is processed by: printed circuit board, mold forming; the printed circuit board is selected from one of single-layer, double-layer, and multi-layer boards, and the metal circuit a and the metal circuit b are arranged in the printed circuit board.

[0009] The second aspect of the present invention provides an auxiliary clamp, which includes an annular clamp substrate, an annular positioning groove is provided in the clamp substrate, the positioning groove has the same shape and size as the insulating substrate, two positioning columns are provided on the top of the positioning groove, the positioning columns correspond to the stamp hole a and the stamp hole b, and several grooves are provided on the outside of the positioning groove corresponding to the positions of the metal wire a and the metal wire b.

[0010] A third aspect of the present invention provides a method for manufacturing an ionization gate, the method comprising the following steps:

[0011] (1) placing the insulating substrate into the positioning groove of the auxiliary fixture, with the pad A and the groove on the same side, and the stamp holes a and b corresponding to the positioning posts;

[0012] (2) placing the auxiliary fixture horizontally, placing the metal wire to be processed in the groove, and extending both ends of the metal wire to be processed out of the outer edge of the fixture base plate;

[0013] (3) using a soldering iron to solder the metal wires to be processed to the soldering pads of the insulating substrate respectively;

[0014] (4) Remove the insulating substrate and use tools, such as pliers, to trim excess metal wire to be processed to obtain the BN-type ion gate.

[0015] Beneficial effects:

[0016] (1) The BN-type ion gate provided by the present invention has a circuit and a pad on the insulating substrate designed in advance. During production, the metal wire to be processed can be conveniently positioned at the position where it needs to be fixed using an ion gate production tool and directly welded to the pad, thereby simplifying complex manual operations such as threading and winding the wire.

[0017] (2) In the BN type ion gate provided by the present invention, the plane reference plane of the metal wire a and the metal wire b is an insulating substrate, which can ensure that they are in the same plane, thereby ensuring the performance of the ion gate.

[0018] (3) The BN-type ion gate provided by the present invention does not use methods such as organic glue that release substances to fix the metal wire to be treated, thereby reducing the interference of ion mobility spectrum.

[0019] (4) The BN-type ion door provided by the present invention is compact in size and has low requirements on manufacturing technology, which means it is suitable for small-batch manual production as well as mechanized mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the structure of the BN type ion gate in the present invention.

[0021] Figure 2 Schematic diagram of the structure of the preparatory parts for making the BN type ion gate in the present invention, wherein (a) is a schematic diagram of the structure of the insulating substrate, (b) is a schematic diagram of the structure of the auxiliary fixture, and (c) is the metal wire to be processed.

[0022] Figure 3 This is a structural diagram of the BN type ion gate manufacturing process.

[0023] As shown in the figure, 1. stamp hole a, 2. pad A, 3. insulating substrate, 4. stamp hole b, 5. metal circuit b, 6. pad b, 7. pad d, 8. metal wire b, 9. metal wire a, 10. pad B, 11. pad c, 12. pad a, 13. metal circuit a, 14. fixture substrate, 15. positioning column, 16. groove, 17. positioning groove, 18. metal wire to be processed. DETAILED DESCRIPTION

[0024] The present application is described in detail below with reference to embodiments, but the present application is not limited to these embodiments.

[0025] Example 1

[0026] The present embodiment provides an ion gate, which is a BN type ion gate, comprising a circular insulating substrate 3, wherein a stamp hole a1 and a stamp hole b4 are axially symmetrically arranged on the outer ring of the insulating substrate 3, wherein the stamp hole a1 is connected to the metal circuit a13, and the stamp hole b4 is connected to the metal circuit b5; wherein a pad A2, a pad B10, several pads a12, several pads b6, several pads c11, and several pads d7 are arranged on one side of the insulating substrate 3, wherein the pad A2, the pad B10, and the pad c11 are all connected to the metal circuit a13; the pad b6 is connected to the metal circuit b5; the line connecting the pad A2 and the pad B10 passes through the center of the insulating substrate 3, and the line coincides with the symmetry axis of the stamp hole a1 and the stamp hole b4; the pad a12 and the pad b6 are respectively arranged on both sides of the symmetry axis, The pads a12 are equidistantly arranged on the insulating substrate 3, the pads b6 are equidistantly arranged on the insulating substrate 3, the pads a12 and the pads b6 are arranged correspondingly, a metal wire a9 is arranged between the corresponding pads a12 and the pads b6, and the metal wire a9 is perpendicular to the axis of symmetry; the pads c11 and the pads d7 are respectively arranged on both sides of the axis of symmetry, the pads c11 are equidistantly arranged on the insulating substrate 3, the pads d7 are equidistantly arranged on the insulating substrate 3, the pads c11 and the pads d7 are arranged correspondingly, a metal wire b8 is arranged between the corresponding pads c11 and the pads d7, and the metal wire b8 is perpendicular to the axis of symmetry, wherein a pad c11 is provided at the midpoint between adjacent pads a12, and a pad d7 is provided at the midpoint between adjacent pads b6.

[0027] The metal wire a9 and the metal wire b8 are arranged in the same plane, and the distance between the metal wire a9 and the adjacent metal wire b8 is the same.

[0028] The metal wire a9 and the metal wire b8 are thin, straight, hard stainless steel wires with a diameter of 0.2-0.05 mm.

[0029] The material of the insulating substrate 3 is selected from one of polytetrafluoroethylene material, epoxy glass fiber material, PEEK material and ceramic material.

[0030] The processing method of the insulating substrate 3 is: printed circuit board, mold forming; the printed circuit board is selected from one of single-layer, double-layer and multi-layer boards, and the metal circuit a13 and the metal circuit b5 are arranged in the printed circuit board.

[0031] Example 2

[0032] The present embodiment provides an auxiliary clamp, which includes an annular clamp substrate 14, in which an annular positioning groove 17 is provided. The positioning groove 17 has the same shape and size as the insulating substrate 3, and two positioning columns 15 are provided on the top of the positioning groove 17. The positioning columns 15 correspond to the stamp hole a1 and the stamp hole b4. Several grooves 16 are provided on the outside of the positioning groove 17 corresponding to the positions of the metal wire a9 and the metal wire b8.

[0033] Example 3

[0034] This embodiment provides a method for manufacturing an ionization gate, the method comprising the following steps:

[0035] (1) placing the insulating substrate 3 into the positioning groove 17 of the auxiliary fixture, with the pad A2 and the groove 16 on the same side, and the stamp hole a1 and the stamp hole b4 corresponding to the positioning column 15;

[0036] (2) placing the auxiliary fixture horizontally, placing the metal wire 18 to be processed in the groove 16, and extending both ends of the metal wire 18 out of the outer edge of the fixture base plate 14;

[0037] (3) using a soldering iron to solder the metal wires 18 to be processed to the soldering pads of the insulating substrate 3;

[0038] (4) Remove the insulating substrate 3 and use tools, such as pliers, to trim the excess metal wire 18 to obtain the BN-type ion gate.

[0039] The above are only a few embodiments of the present application and do not constitute any form of limitation to the present application. Although the present application is disclosed as above with preferred embodiments, it is not intended to limit the present application. Any technician familiar with the profession, without departing from the scope of the technical solution of the present application, using the technical content disclosed above to make slight changes or modifications are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. An ion gate, characterized in that: The ion gate is a BN type ion gate, comprising a circular insulating substrate (3), wherein a stamp hole a (1) and a stamp hole b (4) are axially symmetrically arranged on the outer ring of the insulating substrate (3), wherein the stamp hole a (1) is connected to a metal circuit a (13), and the stamp hole b (4) is connected to a metal circuit b (5); and a welding pad A (2), a welding pad B (10), a plurality of welding pads a (12), a plurality of welding pads b (6), a plurality of welding pads c (11), a plurality of welding pads d ( 7), the pad A (2), the pad B (10), and the pad c (11) are all connected to the metal circuit a (13); the pad b (6) is connected to the metal circuit b (5); the line connecting the pad A (2) and the pad B (10) passes through the center of the circle of the insulating substrate (3), and the line coincides with the symmetry axis of the stamp hole a (1) and the stamp hole b (4); the pad a (12) and the pad b (6) are respectively arranged on both sides of the symmetry axis, and the The pads a (12) are equidistantly arranged on the insulating substrate (3), the pads b (6) are equidistantly arranged on the insulating substrate (3), the pads a (12) and the pads b (6) are arranged correspondingly, a metal wire a (9) is arranged between the corresponding pads a (12) and the pads b (6), and the metal wire a (9) is perpendicular to the symmetry axis; the pads c (11) and the pads d (7) are respectively arranged on both sides of the symmetry axis, and the pads c (11) are equidistantly arranged. On the insulating substrate (3), the pads d (7) are arranged equidistantly on the insulating substrate (3), the pads c (11) are arranged correspondingly to the pads d (7), a metal wire b (8) is arranged between the corresponding pads c (11) and the pads d (7), the metal wire b (8) is perpendicular to the symmetry axis, wherein a pad c (11) is arranged at a midpoint between adjacent pads a (12), and a pad d (7) is arranged at a midpoint between adjacent pads b (6); The metal wire a (9) and the metal wire b (8) are arranged in the same plane, and the distance between the metal wire a (9) and the adjacent metal wire b (8) is the same; The material of the insulating substrate (3) is selected from one of polytetrafluoroethylene material, epoxy glass fiber material, PEEK material and ceramic material.

2. The ion door according to claim 1, characterized in that: The metal wire a (9) and the metal wire b (8) are stainless steel wires with a diameter of 0.2-0.05 mm.

3. The ion door according to claim 1, characterized in that: The insulating substrate (3) is formed by a printed circuit board mold.

4. The ion door according to claim 3, characterized in that: The printed circuit board is selected from a single-layer, double-layer, or multi-layer board, and the metal circuit a (13) and the metal circuit b (5) are arranged in the printed circuit board.

5. An auxiliary fixture for an ion gate as claimed in any one of claims 1 to 4, characterized in that: The clamp comprises an annular clamp substrate (14), an annular positioning groove (17) is arranged inside the clamp substrate (14), the positioning groove (17) has the same shape and size as the insulating substrate (3), two positioning columns (15) are arranged on the top of the positioning groove (17), the positioning columns (15) correspond to the stamp hole a (1) and the stamp hole b (4), and a plurality of grooves (16) are arranged on the outside of the positioning groove (17) corresponding to the positions of the metal wire a (9) and the metal wire b (8).

6. A method for manufacturing the ion gate of any one of claims 1 to 4 using the auxiliary fixture of claim 5, characterized in that: The method comprises the following steps: S1. Place the insulating substrate (3) into the positioning groove (17) of the auxiliary fixture, with the pad A (2) and the groove (16) on the same side, and the stamp hole a (1) and the stamp hole b (4) corresponding to the positioning column (15); S2. The auxiliary fixture is placed horizontally, the metal wire (18) to be processed is placed in the groove (16), and both ends of the metal wire (18) to be processed extend out of the outer edge of the fixture substrate (14); S3. Using a soldering iron, the metal wires to be processed (18) are soldered to the soldering pads of the insulating substrate (3); S4. Remove the insulating substrate (3), trim the excess metal wire (18) to be processed, and obtain the BN-type ion gate.

7. Use of the ion gate according to any one of claims 1 to 4 or the ion gate manufactured by the method of claim 6 in ion mobility spectrometry.

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