Cleaning method and substrate processing device

Abstract

A cleaning method according to one embodiment of the present invention comprises the following steps: a step of supplying a fluorine-free halogen-containing gas to the interior of a processing container capable of being exhausted by means of an exhaust pipe for cleaning; and a step of supplying a fluorine-containing gas to at least either the interior of the processing container or the interior of the exhaust pipe for cleaning after the halogen-containing gas is supplied for cleaning.

Description

Technical Field

[0001] The present disclosure relates to a cleaning method and a substrate processing apparatus. Background Art

[0002] A technique is known in which a halogen-containing gas that does not contain fluorine is supplied into a processing container to remove deposits inside the processing container including a wafer boat by etching (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-91763 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology that enables dry cleaning of a substrate processing apparatus using a SiC component.

[0008] Solutions for solving problems

[0009] A cleaning method according to one embodiment of the present invention comprises the following steps: a step of supplying a fluorine-free halogen-containing gas to the interior of a processing container that can be exhausted by means of an exhaust pipe for cleaning; and a step of supplying a fluorine-containing gas to at least either the interior of the processing container or the interior of the exhaust pipe for cleaning after the step of supplying the halogen-containing gas for cleaning.

[0010] Effects of the Invention

[0011] According to the present disclosure, a substrate processing apparatus using a SiC member can perform dry cleaning. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A cross-sectional view showing a substrate processing apparatus according to an embodiment

[0013] Figure 2 for Figure 1 Top view of a substrate processing apparatus

[0014] Figure 3 To show Figure 1 A cross-sectional view of an example of a heat treatment unit of a substrate processing apparatus

[0015] Figure 4 A flowchart showing the operation of a substrate processing apparatus according to one embodiment

[0016] Figure 5A A diagram showing a first embodiment of a cleaning process

[0017] Figure 5B A diagram showing a first embodiment of a cleaning process

[0018] Figure 6A A diagram showing a second embodiment of the cleaning process

[0019] Figure 6B A diagram showing a second embodiment of the cleaning process

[0020] Figure 7A A diagram showing a third embodiment of the cleaning process

[0021] Figure 7B A diagram showing a third embodiment of the cleaning process

[0022] Figure 7C A diagram showing a third embodiment of the cleaning process

[0023] Figure 8A A diagram showing a fourth embodiment of the cleaning process

[0024] Figure 8B A diagram showing a fourth embodiment of the cleaning process

[0025] Figure 8C A diagram showing a fourth embodiment of the cleaning process

[0026] Figure 9A A diagram showing a fifth embodiment of the cleaning process

[0027] Figure 9B A diagram showing a fifth embodiment of the cleaning process

[0028] Figure 9C A diagram showing a fifth embodiment of the cleaning process

[0029] Figure 10A A diagram showing a sixth embodiment of the cleaning process

[0030] Figure 10B A diagram showing a sixth embodiment of the cleaning process

[0031] Figure 10C A diagram showing a sixth embodiment of the cleaning process

[0032] Figure 11A A diagram showing a seventh embodiment of the cleaning process

[0033] Figure 11B A diagram showing a seventh embodiment of the cleaning process

[0034] Figure 11C A diagram showing a seventh embodiment of the cleaning process DETAILED DESCRIPTION

[0035] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, identical or corresponding components or parts are denoted by identical or corresponding reference numerals, and repeated descriptions are omitted.

[0036] [Substrate processing equipment]

[0037] Figure 1 2 is a cross-sectional view showing a substrate processing apparatus according to one embodiment. Figure 2 for Figure 1 A top view of a substrate processing apparatus.

[0038] The substrate processing apparatus 1 is a heat treatment apparatus having a vertical processing container. The substrate processing apparatus 1 is housed in a housing 11. The housing 11 constitutes the outer housing of the substrate processing apparatus 1. A container conveying area A1 and a substrate conveying area A2 are formed in the housing 11. The container conveying area A1 is an area where a carrier (not shown) serving as a container for accommodating substrates W is moved in and out of the apparatus. The substrate conveying area A2 is a transfer area where the substrates W in the carrier are moved into the heat treatment section 100 described later. The carrier is, for example, a FOUP (Front-Opening Unified Pod). The substrate W is, for example, a semiconductor wafer.

[0039] The container conveying area A1 and the substrate conveying area A2 are separated by a partition 2. The container conveying area A1 is an area under an atmospheric atmosphere and is an area for conveying substrates W housed in a carrier. The area between the devices is equivalent to the container conveying area A1. In one embodiment, the space in the clean room outside the substrate processing device 1 is equivalent to the container conveying area A1. On the other hand, in order to prevent the formation of a natural oxide film on the brought-in substrate W, an inert gas atmosphere, such as a nitrogen (N2) gas atmosphere, is formed in the substrate conveying area A2. The cleanliness is higher than that of the container conveying area A1, and the oxygen concentration and moisture concentration are maintained at low levels. In the following description, the arrangement direction of the container conveying area A1 and the substrate conveying area A2 is referred to as the front-to-back direction of the substrate processing device 1.

[0040] A transport port 20 for connecting the container transport area A1 and the substrate transport area A2 and transporting the substrate W is provided on the partition wall 2. An open / close door 5 is provided on the transport port 20 for blocking the transport port 20 from the substrate transport area A2 side. A drive mechanism (not shown) is connected to the open / close door 5, and the drive mechanism opens and closes the transport port 20 by moving the open / close door 5 in the front-back direction and the up-down direction. The transport port 20 and the open / close door 5 are constructed in accordance with the FIMS (Front-Opening Interface Mechanical Standard) standard.

[0041] The container transport area A1 is equipped with a loading port, a storage rack, a container platform, and a conveyor (not shown). The loading port is a platform that holds carriers when they are brought into the substrate processing apparatus 1. The storage rack is a platform for temporarily storing carriers, also known as a buffer or accumulator. The container platform is located corresponding to the transport port 20. The conveyor transports carriers between the loading port, the container platform, and the storage rack.

[0042] The substrate conveyance region A2 is provided with a thermal processing unit 100 , a wafer conveyance mechanism 27 , a boat holding stage 29 , and a shield 30 .

[0043] The thermal processing unit 100 includes a processing container 110 and a heating unit 140. The processing container 110 is cylindrical and can accommodate substrates W. The lower end of the processing container 110 is open, serving as a furnace opening. The heating unit 140 is cylindrical and disposed around the processing container 110. The heating unit 140 heats the substrates W accommodated within the processing container 110.

[0044] Below the thermal processing unit 100, a substrate holder 150 is placed on a lid 151 via a heat-insulating cylinder 156. The substrate holder 150 holds a plurality of substrates W in a rack-like configuration. The lid 151 is supported by a lifting mechanism 153, which allows the substrate holder 150 to be moved into or out of the processing chamber 110.

[0045] The wafer conveying mechanism 27 is disposed between the substrate holder 150 and the conveying port 20. The wafer conveying mechanism 27 conveys wafers W between a carrier mounted on a container stage within the container conveying area A1 and the substrate holder 150 within the substrate conveying area A2. The wafer conveying mechanism 27 comprises a guide mechanism 27a, a movable body 27b, a fork 27c, a lifting mechanism 27d, and a rotating mechanism 27e. The guide mechanism 27a is in the shape of a rectangular parallelepiped. The guide mechanism 27a is mounted on a lifting mechanism 27d extending in a vertical direction, and is configured to be movable in a vertical direction by the lifting mechanism 27d and rotatable by the rotating mechanism 27e. The movable body 27b is mounted on the guide mechanism 27a so as to be telescopically movable in the longitudinal direction. The fork 27c is a transfer mechanism mounted via the movable body 27b, and is provided in plurality (e.g., five). By having a plurality of forks 27c, multiple substrates W can be transferred simultaneously, thereby shortening the time required to convey the substrates W. However, the number of fork 27c may be one.

[0046] The boat holding table 29 is used to hold the substrate holder 150. The boat holding table 29 is located in a position accessible by the wafer conveying mechanism 27 and a conveying device (not shown) for conveying the substrate holder 150. The substrate holder 150 is transferred between the heat-insulating cylinder 156 and the boat holding table 29 by the conveying device. Figure 2In the figure, two boat holding stages 29 are shown, but the number of the boat holding stages 29 may be one or three or more.

[0047] The shielding member 30 is used to open and close the opening of the lower end of the processing container 110. The shielding member 30 is moved by a driving mechanism (not shown) to a position ( Figure 1 The position shown by the solid line) and the position of the opening at the lower end of the sealed processing container 110 ( Figure 1 The device moves between the positions shown by the dotted lines.

[0048] The substrate processing apparatus 1 is equipped with a control unit 90, for example, formed by a computer. The control unit 90 includes a program, memory, and a data processing unit formed by a CPU. The program contains commands (steps) that transmit control signals from the control unit 90 to various components of the substrate processing apparatus 1, thereby enabling the aforementioned processing steps to proceed. Based on these control signals, the transport of the carrier, the transport of the substrate W, the opening and closing of the cover 151, the opening and closing of the door 5, and the opening and closing of the shutter 30 are controlled, thereby enabling the transport and processing of the substrate W. The program is stored on a computer storage medium, such as a floppy disk, a compact disk, a hard disk, a MO (magnetic optical disk), or a memory card, and is installed in the control unit 90.

[0049] Figure 3 To show Figure 1 sectional view of an example of the heat treatment unit 100 of the substrate processing apparatus 1. Figure 3 As shown, the thermal processing unit 100 includes a processing container 110 , a gas supply unit 120 , an exhaust unit 130 , and a heating unit 140 .

[0050] The processing container 110 has a double-tube structure including an outer tube 111 and an inner tube 112. The outer tube 111 has a cylindrical shape with a top, and the inner tube 112 has a cylindrical shape and is concentrically arranged inside the outer tube 111.

[0051] Outer tube 111 and inner tube 112 are formed from a heat-resistant material such as quartz or silicon carbide (SiC). The lower ends of outer tube 111 and inner tube 112 are each held by a cylindrical manifold 113 made of, for example, stainless steel. A cover 151 is provided at the lower end of manifold 113 to hermetically seal the opening, allowing for openable and closed operation.

[0052] A rotating shaft 152 is inserted through the center of the cover 151, for example, by a magnetic fluid seal, allowing for airtight rotation. The lower end of the rotating shaft 152 is connected to a rotating mechanism 154 of a lifting mechanism 153, and the upper end is fixed to a turntable 155. A substrate holder 150 that holds a substrate W is placed on the turntable 155 via a heat-insulating cylinder 156. The substrate holder 150 is, for example, a wafer boat. The substrate holder 150 is formed of a heat-resistant material such as SiC or quartz. The substrate holder 150 holds multiple substrates W (e.g., 50 to 150) horizontally at predetermined intervals in the vertical direction.

[0053] By raising and lowering the cover 151 using the lifting mechanism 153, the substrate holder 150 can be moved into or out of the processing container 110. When the substrate holder 150 is moved into the processing container 110, the cover 151 is in close contact with the manifold 113, and the space therebetween is hermetically sealed.

[0054] The gas supply unit 120 includes a film-forming gas supply unit 121 , a cleaning gas supply unit 122 , and a purge gas supply unit 123 .

[0055] The film-forming gas supply unit 121 introduces film-forming gas into the processing container 110. The film-forming gas supply unit 121 includes a gas supply source 121a, a gas supply pipe 121b, a gas nozzle 121c, an on-off valve 121d, and a flow controller 121e. The gas supply source 121a is the source of the film-forming gas. The gas supply pipe 121b introduces the film-forming gas from the gas supply source 121a to the gas nozzle 121c. The gas nozzle 121c is disposed through the lower portion of the side wall of the manifold 113 and is bent, for example, in an L-shape, within the inner tube 112, with its tip facing upward. The gas nozzle 121c introduces the film-forming gas into the inner tube 112 from its tip. The gas nozzle 121c is formed, for example, of quartz. The on-off valve 121d is interposed between the gas supply pipe 121b and is used to open and close the flow path within the gas supply pipe 121b. The flow controller 121e is interposed between the gas supply pipe 121b and is used to control the flow rate of the film-forming gas flowing in the flow path within the gas supply pipe 121b. The flow controller 121e is, for example, a mass flow controller.

[0056] The film-forming gas supply unit 121 can supply the film-forming gas into the inner tube 112 while controlling the flow rate of the film-forming gas.

[0057] The film-forming gas can be selected according to the type of film to be formed. The film to be formed is, for example, a silicon (Si) film, a germanium (Ge) film, or a silicon-germanium (SiGe) film. When forming a Si film, as the film-forming gas, for example, a silane-based gas such as monosilane (SiH4) gas or disilane (Si2H6) gas can be used. When forming a Ge film, as the film-forming gas, for example, a germanium-based gas such as monogermane (GeH4) gas or disermane (Ge2H6) gas can be used. When forming a SiGe film, as the film-forming gas, for example, a mixed gas of a silane-based gas and a germane-based gas can be used.

[0058] The cleaning gas supply unit 122 introduces cleaning gas into the processing container 110. The cleaning gas supply unit 122 includes a gas supply source 122a, a gas supply pipe 122b, a gas nozzle 122c, an on-off valve 122d, and a flow controller 122e. The gas supply source 122a is the source of the cleaning gas. The gas supply pipe 122b introduces the cleaning gas from the gas supply source 122a to the gas nozzle 122c. The gas nozzle 122c is provided through the lower portion of the side wall of the manifold 113 and is bent, for example, in an L-shape within the inner tube 112 with its front end facing upward. The gas nozzle 122c introduces the cleaning gas into the inner tube 112 from its front end. The gas nozzle 122c is formed, for example, of quartz. The on-off valve 122d is interposed between the gas supply pipe 122b and is used to open and close the flow path within the gas supply pipe 122b. The flow controller 122e is interposed on the gas supply pipe 122b and is used to control the flow rate of the cleaning gas flowing in the flow path in the gas supply pipe 122b. The flow controller 122e is, for example, a mass flow controller.

[0059] The cleaning gas supply unit 122 may supply the cleaning gas into the inner tube 112 while controlling the flow rate of the cleaning gas.

[0060] Examples of cleaning gases include halogen-containing gases such as fluorine-containing gases, chlorine-containing gases, bromine-containing gases, and iodine-containing gases. Examples of fluorine-containing gases include fluorine (F2) gas, chlorine trifluoride (ClF3) gas, and nitrogen trifluoride (NF3) gas. Examples of chlorine-containing gases include chlorine (Cl2) gas and hydrogen chloride (HCl) gas. Examples of bromine-containing gases include bromine (Br2) gas and hydrogen bromide (HBr) gas. Examples of iodine-containing gases include iodine (I2) gas and hydrogen iodide (HI) gas.

[0061] The purge gas supply unit 123 introduces purge gas into the processing container 110. The purge gas supply unit 123 includes a gas supply source 123a, a gas supply pipe 123b, a gas nozzle 123c, an on-off valve 123d, and a flow controller 123e. Gas supply source 123a is the source of the purge gas. Gas supply pipe 123b introduces purge gas from source 123a to gas nozzle 123c. Gas nozzle 123c is disposed through the lower portion of the sidewall of manifold 113 and introduces the purge gas into inner tube 112. Gas nozzle 123c is formed, for example, of quartz. An on-off valve 123d is interposed in gas supply pipe 123b to open and close the flow path within gas supply pipe 123b. A flow controller 123e is interposed in gas supply pipe 123b to control the flow rate of the purge gas flowing through the flow path within gas supply pipe 123b. The flow controller 123e is, for example, a mass flow controller.

[0062] The purge gas supply unit 123 may supply the purge gas into the inner tube 112 while controlling the flow rate of the purge gas.

[0063] The purge gas is, for example, a rare gas such as Ar gas or an inert gas such as N 2 gas.

[0064] The exhaust unit 130 is configured to exhaust the interior of the processing container 110 , and includes an exhaust pipe 131 , an exhaust device 132 , and a pressure adjustment mechanism 133 .

[0065] The exhaust pipe 131 is provided at an upper portion of a side wall of the manifold 113 , and discharges gases such as film-forming gas, cleaning gas, and purge gas from a gap between the outer tube 111 and the inner tube 112 .

[0066] The exhaust device 132 is connected to the exhaust pipe 131 to exhaust the interior of the processing container 110. The exhaust device 132 is, for example, a vacuum pump.

[0067] The pressure regulating mechanism 133 is interposed in the middle of the exhaust pipe 131. The pressure regulating mechanism 133 is, for example, an automatic pressure control (APC: Auto Pressure Controller) valve.

[0068] The heating unit 140 includes an insulator 141 and a heater 142. The insulator 141 is disposed around the processing container 110 and is mounted on the bottom plate 160. The insulator 141 has a cylindrical shape with a top. The heater 142 is disposed on the inner circumference of the insulator 141. The heater 142 is connected to a power source (not shown) and receives power from the power source to generate heat.

[0069] It should be noted that while the gas supply unit 120 in the thermal processing unit 100 is described as including one film-forming gas supply unit 121, one cleaning gas supply unit 122, and one purge gas supply unit 123, the present disclosure is not limited thereto. For example, the number of film-forming gas supply units 121, cleaning gas supply units 122, and purge gas supply units 123 may be determined based on the type of gas used, and may include multiple supply units.

[0070] [Operation of substrate processing apparatus]

[0071] Figure 4 1 is a flowchart showing the operation of the substrate processing apparatus 1 according to one embodiment. Figure 4 , the film forming process performed on the substrate W prior to the cleaning process of the substrate processing apparatus 1 is also shown. During the cleaning process, the first cleaning step S4, the second cleaning step S5, and the third cleaning step S6 are performed in sequence. During the film forming process, the loading step S1, the film forming step S2, and the unloading step S3 are performed in sequence.

[0072] Figure 4 The operation of the substrate processing apparatus 1 shown is repeated by changing the substrate W under the control of the control unit 90. Figure 4 , a cleaning process is performed once for each film forming process. However, the technology disclosed herein is not limited thereto. For example, a cleaning process may be performed after performing multiple film forming processes. Each step is described below.

[0073] The loading step S1 is a step for loading substrates W into the processing container 110. In loading step S1, the control unit 90 first controls the wafer conveyor mechanism 27 to load multiple substrates W onto the substrate holder 150 outside the processing container 110. The substrate holder 150 holds the multiple substrates W horizontally, spaced apart in the vertical direction. Next, the control unit 90 controls the lifting mechanism 153 to raise the lid 151 and the substrate holder 150. This loads the substrates W into the processing container 110 along with the substrate holder 150, and the lower opening of the processing container 110 is sealed by the lid 151.

[0074] The film forming process S2 is a process for forming a film on the substrate W. In the film forming process S2, the control unit 90 controls the various parts of the thermal treatment unit 100, adjusts the temperature of the substrate W and the pressure inside the processing container 110, rotates the substrate holder 150, and supplies a film forming gas to the interior of the processing container 110, thereby forming a film on the substrate W. The formed film is, for example, a Si film, a Ge film, or a SiGe film. The Si film, the Ge film, and the SiGe film can be an undoped film or a film doped with carbon, phosphorus, boron, etc. After the desired film is formed on the substrate W, the control unit 90 controls the various parts of the thermal treatment unit 100, supplies a purge gas to the interior of the processing container 110 instead of the film forming gas, and purges the interior of the processing container 110. Then, the control unit 90 controls the various parts of the thermal treatment unit 100, stops the exhaust inside the processing container 110, and restores the pressure inside the processing container 110 to atmospheric pressure.

[0075] The unloading step S3 is a step for unloading the substrate W outside the processing container 110. In the unloading step S3, the control unit 90 controls the lifting mechanism 153 to lower the lid 151 and the substrate holder 150. This opens the lower end of the processing container 110, and the lid 151, together with the substrate holder 150, unloads the substrate W outside the processing container 110. The control unit 90 then controls the wafer transport mechanism 27 to remove the substrate W from the substrate holder 150.

[0076] The first cleaning step S4 is a step of removing deposits deposited inside the processing container 110 by supplying a fluorine-containing gas into the processing container 110 without the substrate holder 150 being present. The deposits are, for example, the Si film, Ge film, or SiGe film deposited in the film formation step S2.

[0077] In the first cleaning step S4, the controller 90 moves the shutter 30 from an open position to a closed position, sealing the lower opening of the processing vessel 110. The controller 90 then controls various components of the thermal processing unit 100 to adjust the temperature and pressure inside the processing vessel 110 and supply a fluorine-containing gas into the processing vessel 110, thereby removing deposits deposited within the processing vessel 110. Fluorine-containing gases include, for example, F2 gas, ClF3 gas, and NF3 gas. Fluorine-containing gases etch Si, Ge, and SiGe at low temperatures. Therefore, in addition to deposits deposited within the processing vessel 110, deposits deposited within the exhaust pipe 131, which is even cooler than the interior of the processing vessel 110, can also be removed. To quickly remove deposits deposited within the processing vessel 110 and the exhaust pipe 131, the temperature within the processing vessel 110 during the first cleaning step S4 is preferably 300°C to 400°C.

[0078] The second cleaning step S5 is a step of removing deposits at least on the substrate holder 150 by supplying a fluorine-free halogen-containing gas into the processing container 110 while the substrate holder 150 is present. The deposits are, for example, the Si film, Ge film, or SiGe film deposited in the film formation step S2.

[0079] In the second cleaning step S5, the controller 90 moves the shutter 30 from the closed position to the open position, thereby opening the lower end of the processing container 110. The controller 90 then controls the lifting mechanism 153 to raise the lid 151 and the substrate holder 150. Consequently, the substrate holder 150 is loaded into the processing container 110, and the lower end of the processing container 110 is sealed by the lid 151. The substrate holder 150 is the substrate holder after the substrate W has been unloaded in the unloading step S3. For example, the substrate holder is empty, or only a dummy substrate is loaded on the substrate holder. The dummy substrate may be, for example, a SiC dummy or a quartz dummy.

[0080] Next, the controller 90 adjusts the temperature and pressure inside the processing vessel 110 and supplies a fluorine-free halogen-containing gas into the processing vessel 110. Examples of fluorine-free halogen-containing gases include chlorine-containing gases such as Cl₂ gas and HCl gas, bromine-containing gases such as Br₂ gas and HBr gas, and iodine-containing gases such as I₂ gas and HI gas. Fluorine-free halogen-containing gases are less likely to etch SiC than fluorine-containing gases. Therefore, when the substrate holder 150 and the dummy substrate are formed from SiC components, damage to the substrate holder 150 and the dummy substrate can be minimized, and deposited Si, Ge, or SiGe films can be removed. However, the etching reaction of Si, Ge, or SiGe by fluorine-free halogen-containing gases is less likely to proceed at low temperatures. Therefore, deposits deposited inside the exhaust pipe 131, which is cooler than the interior of the processing vessel 110, may remain unremoved. Furthermore, fluorine-free halogen-containing gases react with Si, Ge, or SiGe to produce products containing Si, Ge, SiGe, and halogen. Therefore, products may adhere to relatively low-temperature areas such as the interior of the exhaust pipe 131 and the interiors of the gas nozzles 121c, 122c, and 123c. If the interior of the processing container 110 is exposed to the atmosphere while these products adhere, corrosion may occur. It should be noted that the temperature inside the processing container 110 during the second cleaning step S5 is, for example, 500°C to 650°C.

[0081] The third cleaning step S6 is a step of removing deposits deposited at least inside the exhaust pipe 131 by supplying a fluorine-containing gas into at least one of the interior of the processing container 110 and the interior of the exhaust pipe 131. Examples of the deposits include products containing Si, Ge, SiGe, and halogens generated in the second cleaning step S5, and residual films in the Si, Ge, and SiGe films deposited in the film formation step S2 that were not completely removed in the first cleaning step S4 and the second cleaning step S5.

[0082] The third cleaning step S6 is performed, for example, while the substrate holder 150 is present inside the processing container 110. In this case, while the substrate holder 150 is present inside the processing container 110, the control unit 90 controls the various components of the thermal treatment unit 100, adjusts the temperature and pressure inside the processing container 110, and supplies a fluorine-containing gas into the processing container 110. Fluorine-containing gases are, for example, F2 gas, ClF3 gas, or NF3 gas. When the substrate holder 150 and the dummy substrate are formed from SiC components, damage to the substrate holder 150 and the dummy substrate can be suppressed for the following reasons. In the third cleaning step S6, since there is little deposit to be removed, the supply of the fluorine-containing gas can be short. In addition, the Si film, Ge film, and SiGe film that are deposits on the SiC components are removed in advance in the second cleaning step S5. Therefore, the heat of reaction between the deposited film and the fluorine-containing gas is less likely to be generated on the SiC components, and therefore, an etching reaction on the SiC is less likely to occur. It should be noted that the temperature inside the processing container 110 in the third cleaning step S6, which is performed while the substrate holder 150 is present inside the processing container 110, is, for example, 100° C. to 300° C. This is because the amount of deposits to be removed is small and the etching reaction of the fluorine-containing gas proceeds at a low temperature, thereby further suppressing damage to the SiC member.

[0083] Alternatively, the third cleaning step S6 can be performed, for example, without the substrate holder 150 inside the processing vessel 110. In this case, the controller 90 controls the lifting mechanism 153 to lower the lid 151 and the substrate holder 150. This causes the lid 151 to open the lower opening of the processing vessel 110, allowing the substrate holder 150 to be moved outside the processing vessel 110. The controller 90 then moves the shutter 30 from an open position to a closed position, sealing the lower opening of the processing vessel 110. The controller 90 then adjusts the temperature and pressure inside the processing vessel 110 and supplies fluorine-containing gas into the processing vessel 110. It should be noted that the temperature inside the processing vessel 110 during the third cleaning step S6, performed without the substrate holder 150 inside the processing vessel 110, is, for example, 100°C to 400°C. Desirably, it is 300°C to 400°C.

[0084] Furthermore, in the third cleaning step S6, in addition to or instead of supplying the fluorine-containing gas into the processing container 110, the fluorine-containing gas may be directly supplied into the exhaust pipe 131 from a gas supply unit (not shown) connected to the exhaust pipe 131. By supplying the fluorine-containing gas into the exhaust pipe 131, deposits deposited in the exhaust pipe 131 can be effectively removed at a lower flow rate than when the fluorine-containing gas is supplied into the processing container 110.

[0085] It should be noted that Figure 4 In the embodiment, the cleaning process includes a first cleaning step S4, a second cleaning step S5, and a third cleaning step S6, but the technology disclosed herein is not limited thereto. For example, the first cleaning step S4 may be omitted.

[0086] The following describes an embodiment of the cleaning process by taking as an example the case of removing deposits, ie, Si films, deposited inside the processing container 110, inside the exhaust pipe 131, the heat-insulating cylinder 156, and on the substrate holder 150 formed of a SiC member.

[0087] Figure 5A and Figure 5B The cleaning process of the first embodiment does not include a step corresponding to the first cleaning step S4. Figure 5A The second cleaning step S15 and Figure 5B The third cleaning step S16 is shown.

[0088] The second cleaning step S15 is equivalent to the aforementioned second cleaning step S5. The second cleaning step S15 is a step in which the interior of the processing container 110 is heated to 500°C to 650°C while the heat-insulating cylinder 156 and the substrate holder 150 are present inside the processing container 110, and Cl₂ gas is supplied into the processing container 110. In the second cleaning step S15, the Si film deposited on the interior of the processing container 110, the interior of the exhaust pipe 131, the heat-insulating cylinder 156, and the substrate holder 150 is removed. At this time, the Cl₂ gas reacts with the Si film to produce products containing Cl and Si, such as silicon tetrachloride (SiCl₄). The products containing Cl and Si adhere to the interior of the exhaust pipe 131, the interior of the gas supply pipe, and the like.

[0089] The third cleaning process S16 is equivalent to the aforementioned third cleaning process S6. The third cleaning process S16 is a process of supplying F2 gas to at least one of the interior of the processing container 110 and the interior of the exhaust pipe 131 while the heat-insulating cylinder 156 and the substrate holder 150 are present inside the processing container 110. In the third cleaning process S16, the interior of the processing container 110 is heated to, for example, 100°C to 300°C. In the third cleaning process S16, the F2 gas reacts with the product containing Cl and Si produced in the second cleaning process S15 to form silicon tetrafluoride (SiF4) with a high vapor pressure and is exhausted. Therefore, the product containing Cl and Si adhering to the interior of the exhaust pipe 131, the interior of the gas supply pipe, etc. can be removed.

[0090] Assume that the second cleaning step S15 is not performed. In this case, F2 gas is supplied to the interior of the processing container 110 while the Si film is deposited on the interior of the processing container 110, the interior of the exhaust pipe 131, the heat-insulating cylinder 156, the substrate holder 150, etc. During etching, reaction heat is generated, and therefore, the surface temperature of the interior of the processing container 110, the interior of the exhaust pipe 131, the heat-insulating cylinder 156, the substrate holder 150, etc. rises significantly above the temperature heated by the heater 142. Therefore, when the substrate holder 150 is formed of a SiC component, the possibility of the substrate holder 150 being damaged by etching becomes higher. In order to suppress damage to the SiC component, it is considered to pre-set the temperature for removing the Si film to an extremely low temperature, but in this case, the removal of the Si film requires a long time, which is unrealistic.

[0091] In contrast, in the first embodiment, first, in the second cleaning step S15, the Si film deposited inside the processing container 110, inside the exhaust pipe 131, the heat-insulating cylinder 156, and the substrate holder 150 is removed using Cl2 gas, which does not easily etch SiC. Next, in the third cleaning step S16, the products containing Cl and Si generated in the second cleaning step S15 are removed. This prevents damage to the substrate holder 150, even when the substrate holder 150 is formed of a SiC member.

[0092] Figure 6A and Figure 6B The cleaning process of the second embodiment does not include a step corresponding to the first cleaning step S4, but includes Figure 6A The second cleaning step S25 shown, and Figure 6B The third cleaning step S26 is shown.

[0093] The second cleaning step S25 is the same as the second cleaning step S15 of the first embodiment. Specifically, the second cleaning step S25 is a step in which the interior of the processing container 110 is heated to 500°C to 650°C while the heat-insulating cylinder 156 and the substrate holder 150 are present inside the processing container 110, and Cl₂ gas is supplied into the processing container 110. In the second cleaning step S25, the Si film deposited inside the processing container 110, inside the exhaust pipe 131, and inside the heat-insulating cylinder 156 and the substrate holder 150 is removed. At this time, the Cl₂ gas reacts with the Si film to produce products containing Cl and Si, such as silicon tetrachloride (SiCl₄). These products containing Cl and Si adhere to the interior of the exhaust pipe 131 and the interior of the gas supply pipe.

[0094] The third cleaning step S26 is equivalent to the aforementioned third cleaning step S6. The third cleaning step S26 involves supplying F2 gas into at least one of the interior of the processing container 110 and the interior of the exhaust pipe 131, while the heat-insulating cylinder 156 and the substrate holder 150 are not present within the processing container 110. In the third cleaning step S26, the lid 151 and the substrate holder 150 are lowered by the lifting mechanism 153. The lid 151 opens the lower opening of the processing container 110, allowing the substrate holder 150 to be moved outside the processing container 110. The shutter 30 is then moved from an open position to a closed position, sealing the lower opening of the processing container 110. The interior of the processing container 110 is evacuated to a set pressure while supplying fluorine-containing gas therein. Furthermore, the interior of the processing container 110 is heated to, for example, 300°C to 400°C. In the third cleaning process S26, the F2 gas reacts with the product containing Cl and Si produced in the second cleaning process S25 to become SiF4 with high vapor pressure, and is exhausted. Therefore, the product containing Cl and Si attached to the inside of the exhaust pipe 131, the inside of the gas supply pipe, etc. can be removed.

[0095] In the second embodiment, first, in the second cleaning step S25, the Si film deposited inside the processing container 110, inside the exhaust pipe 131, the heat-insulating cylinder 156, and the substrate holder 150 is removed using Cl2 gas, which does not easily etch SiC. Next, in the third cleaning step S26, the products containing Cl and Si generated in the second cleaning step S25 are removed. This prevents damage to the substrate holder 150, even when the substrate holder 150 is formed of a SiC member.

[0096] In the second embodiment, the third cleaning step S26 is performed without the substrate holder 150 in the processing container 110. This prevents the substrate holder 150 from being exposed to the F2 gas, significantly reducing damage to the substrate holder 150.

[0097] Figure 7A 、 Figure 7B and Figure 7C 1 is a diagram showing a third embodiment of the cleaning process. The cleaning process of the third embodiment includes: Figure 7A The first cleaning step S34 shown, Figure 7B The second cleaning step S35 shown, and Figure 7C The third cleaning step S36 is shown.

[0098] The first cleaning step S34 is equivalent to the first cleaning step S4 described above. The first cleaning step S34 is a step in which the interior of the processing container 110 is heated to 300°C to 400°C, and F2 gas is supplied into the processing container 110, while the heat-insulating cylinder 156 is present in the processing container 110 and the substrate holder 150 is not present in the processing container 110. In the first cleaning step S34, the substrate holder 150 on the heat-insulating cylinder 156 is transferred to the wafer boat holding stage 29 by the conveying device, and the cover 151 and the heat-insulating cylinder 156 are raised. As a result, the heat-insulating cylinder 156 is moved into the processing container 110, and the opening at the lower end of the processing container 110 is sealed by the cover 151. In the first cleaning step S34, the Si film deposited inside the processing container 110, inside the exhaust pipe 131, and on the heat-insulating cylinder 156 is removed.

[0099] The second cleaning step S35 is equivalent to the second cleaning step S5 described above. The second cleaning step S35 is a step in which the interior of the processing container 110 is heated to 500°C to 650°C while the heat-insulating cylinder 156 and the substrate holder 150 are present inside the processing container 110, and Cl2 gas is supplied into the processing container 110. In the second cleaning step S35, the lid 151 and the heat-insulating cylinder 156 are lowered by the lifting mechanism 153. The lid 151 opens the opening at the lower end of the processing container 110, and the heat-insulating cylinder 156 is moved outside the processing container 110. Next, the substrate holder 150 placed on the wafer boat holding table 29 is transferred to the heat-insulating cylinder 156 by the conveying device, and the lid 151, the heat-insulating cylinder 156, and the substrate holder 150 are raised. Thus, the heat-insulating cylinder 156 and the substrate holder 150 are brought into the processing container 110, and the lower opening of the processing container 110 is sealed by the lid 151. In the second cleaning step S35, the Si film deposited on the substrate holder 150, which was not removed in the first cleaning step S34, is removed. In the second cleaning step S35, the amount of Si film to be removed is small, so the amount of SiCl4 and other substances generated by the reaction of Cl2 gas with the Si film is reduced.

[0100] The third cleaning step S36 is equivalent to the aforementioned third cleaning step S6. The third cleaning step S36 is a step in which F2 gas is supplied to at least one of the interior of the processing container 110 and the interior of the exhaust pipe 131 while the heat-insulating cylinder 156 and the substrate holder 150 are present within the processing container 110. In the third cleaning step S36, the interior of the processing container 110 is heated to, for example, 100°C to 300°C. In the third cleaning step S36, the F2 gas reacts with the products containing Cl and Si produced in the second cleaning step S35 to form SiF4 with a high vapor pressure, which is then exhausted. This removes the products containing Cl and Si adhering to the interior of the exhaust pipe 131, the interior of the gas supply pipe, and the like. At this time, the amount of SiCl4 and other substances produced in the second cleaning step S35 is small, so the processing time of the third cleaning step S36 can be shortened, further reducing damage to the substrate holder 150 formed of SiC components.

[0101] In the third embodiment, first, in the first cleaning step S34, the Si film deposited on the interior of the processing container 110, the interior of the exhaust pipe 131, and the heat-insulating cylinder 156 is removed. Next, in the second cleaning step S35, the Si film deposited on the substrate holder 150 is removed. Then, in the third cleaning step S36, the products containing Cl and Si generated in the second cleaning step S35 are removed. This prevents damage to the substrate holder 150, even when the substrate holder 150 is formed of a SiC member.

[0102] Furthermore, in the third embodiment, the amount of Si film removed by the Cl2 gas is small, and therefore the amount of SiCl4 and the like generated in the second cleaning step S35 is also small. Consequently, the processing time of the third cleaning step S36 can be shortened, and the time the substrate holder 150 is exposed to the F2 gas can be shortened, thereby further reducing damage to the substrate holder 150 formed of a SiC member.

[0103] In the third embodiment, the first cleaning step S34 can be performed while the substrate W mounted on the substrate holder 150 is being cooled and while the wafer transfer mechanism 27 is removing the substrate W from the substrate holder 150 . This can shorten the time required for the cleaning process and improve productivity.

[0104] Figure 8A 、 Figure 8B and Figure 8C 1 is a diagram showing a fourth embodiment of the cleaning process. The cleaning process of the fourth embodiment includes: Figure 8A The first cleaning step S44 shown, Figure 8B The second cleaning step S45 shown, and Figure 8C The third cleaning step S46 is shown.

[0105] The first cleaning step S44 and the second cleaning step S45 are respectively the same as the first cleaning step S34 and the second cleaning step S35 of the third embodiment.

[0106] The third cleaning step S46 is equivalent to the aforementioned third cleaning step S6. The third cleaning step S46 is a step in which F2 gas is supplied into the processing container 110 while the substrate holder 150 is not present inside the processing container 110. In the third cleaning step S46, the lid 151 and the substrate holder 150 are lowered by the lifting mechanism 153. The lid 151 opens the opening at the lower end of the processing container 110, and the substrate holder 150 is moved out of the processing container 110. The transport device then transfers the substrate holder 150 on the heat-insulating cylinder 156 to the wafer boat holding stage 29, and the lid 151 and heat-insulating cylinder 156 are raised. As a result, the heat-insulating cylinder 156 is moved into the processing container 110, and the opening at the lower end of the processing container 110 is sealed by the lid 151. Furthermore, the interior of the processing container 110 is heated to, for example, 300°C to 400°C. In the third cleaning step S46, F2 gas reacts with the products containing Cl and Si produced in the second cleaning step S45 to form SiF4 with a high vapor pressure, which is then exhausted. This removes the products containing Cl and Si adhering to the interior of the exhaust pipe 131, the interior of the gas supply pipe, and the like. Since the amount of SiCl4 and other substances produced in the second cleaning step S45 is small, the processing time of the third cleaning step S46 can be shortened. Furthermore, since the substrate holder 150 is not present within the processing container 110, damage to the substrate holder 150 formed of a SiC member can be further reduced.

[0107] In the fourth embodiment, first, in the first cleaning step S44, the Si film deposited on the interior of the processing container 110, the interior of the exhaust pipe 131, and the heat-insulating cylinder 156 is removed. Next, in the second cleaning step S45, the Si film deposited on the substrate holder 150 is removed. Then, in the third cleaning step S46, the products containing Cl and Si generated in the second cleaning step S45 are removed. This allows the substrate holder 150 to be prevented from being damaged, even when it is formed of a SiC member.

[0108] In the fourth embodiment, the third cleaning step S46 is performed without the substrate holder 150 in the processing container 110. This prevents the substrate holder 150 from being exposed to the F2 gas, significantly reducing damage to the substrate holder 150.

[0109] In the fourth embodiment, the amount of Si film removed using Cl2 gas is small, so the amount of SiCl4 and the like generated in the second cleaning step S45 is also small. Therefore, the processing time of the third cleaning step S46 can be shortened.

[0110] In addition, in the fourth embodiment, the first cleaning step S44 can be performed while the substrate W mounted on the substrate holder 150 is being cooled and while the wafer transport mechanism 27 is removing the substrate W from the substrate holder 150. Therefore, the time required for the cleaning process can be shortened, and productivity can be improved.

[0111] Figure 9A 、 Figure 9B and Figure 9C 1 is a diagram showing a fifth embodiment of the cleaning process. The cleaning process of the fifth embodiment includes: Figure 9A The first cleaning step S54 shown, Figure 9B The second cleaning step S55 shown, and Figure 9C The third cleaning step S56 is shown.

[0112] The first cleaning step S54 and the second cleaning step S55 are respectively the same as the first cleaning step S34 and the second cleaning step S35 of the third embodiment.

[0113] The third cleaning step S56 is the same as the third cleaning step S26 of the second embodiment.

[0114] In the fifth embodiment, first, in the first cleaning step S54, the Si film deposited on the interior of the processing container 110, the interior of the exhaust pipe 131, and the heat-insulating cylinder 156 is removed. Next, in the second cleaning step S55, the Si film deposited on the substrate holder 150 is removed. Then, in the third cleaning step S56, the products containing Cl and Si generated in the second cleaning step S55 are removed. This allows the substrate holder 150 to be prevented from being damaged, even when it is formed of a SiC member.

[0115] In the fifth embodiment, the third cleaning step S56 is performed without the substrate holder 150 in the processing container 110. This prevents the substrate holder 150 from being exposed to the F2 gas, significantly reducing damage to the substrate holder 150.

[0116] In the fifth embodiment, the amount of Si film removed by the Cl2 gas is small, so the amount of SiCl4 and the like generated in the second cleaning step S55 is also small. Therefore, the processing time of the third cleaning step S56 can be shortened.

[0117] In addition, in the fifth embodiment, the first cleaning step S54 can be performed while the substrate W mounted on the substrate holder 150 is being cooled and while the wafer transport mechanism 27 is removing the substrate W from the substrate holder 150. Therefore, the time required for the cleaning process can be shortened, and productivity can be improved.

[0118] Figure 10A 、 Figure 10B and Figure 10C 1 is a diagram showing a sixth embodiment of the cleaning process. The cleaning process of the sixth embodiment includes: Figure 10A The first cleaning step S64 shown, Figure 10B The second cleaning step S65 shown, and Figure 10C The third cleaning step S66 is shown.

[0119] The first cleaning step S64 is equivalent to the first cleaning step S4 described above. The first cleaning step S64 is a step in which the interior of the processing container 110 is heated to 300°C to 400°C, while F2 gas is supplied into the processing container 110, while the heat-insulating cylinder 156 and the substrate holder 150 are not present inside the processing container 110. In the first cleaning step S64, after the substrate W is unloaded from the processing container 110 together with the substrate holder 150 in the unloading step S3, the shutter 30 is moved from the open position to the closed position, sealing the lower opening of the processing container 110. Subsequently, the interior of the processing container 110 is exhausted to a set pressure while a fluorine-containing gas is supplied into the processing container 110. In the first cleaning step S64, the Si film deposited inside the processing container 110 and inside the exhaust pipe 131 is removed. The first cleaning step S64 can be performed while the substrate W mounted on the substrate holder 150 is being cooled or while the wafer transport mechanism 27 is removing the substrate W from the substrate holder 150 .

[0120] The second cleaning step S65 and the third cleaning step S66 are respectively the same as the second cleaning step S15 (but the cleaning target range is different) and the third cleaning step S16 of the first embodiment.

[0121] In the sixth embodiment, first, in the first cleaning step S64, the Si film deposited inside the processing container 110 and the exhaust pipe 131 is removed. Next, in the second cleaning step S65, the Si film deposited on the heat-insulating cylinder 156 and the substrate holder 150 is removed. Then, in the third cleaning step S66, the products containing Cl and Si generated in the second cleaning step S65 are removed. This prevents damage to the substrate holder 150, even when the substrate holder 150 is formed of a SiC member.

[0122] Furthermore, in the sixth embodiment, the amount of Si film removed by the Cl2 gas is small, and therefore the amount of SiCl4 and the like generated in the second cleaning step S65 is also small. Consequently, the processing time of the third cleaning step S66 can be shortened, and the time the substrate holder 150 is exposed to the F2 gas can be shortened, thereby further reducing damage to the substrate holder 150 formed of a SiC member.

[0123] In addition, in the sixth embodiment, the first cleaning step S64 can be performed while the substrate W mounted on the substrate holder 150 is being cooled and while the wafer transport mechanism 27 is removing the substrate W from the substrate holder 150. This can shorten the time required for the cleaning process and improve productivity.

[0124] Figure 11A 、 Figure 11B and Figure 11C 1 is a diagram showing a seventh embodiment of the cleaning process. The cleaning process of the seventh embodiment includes: Figure 11A The first cleaning step S74 shown, Figure 11B The second cleaning step S75 shown, and Figure 11C The third cleaning step S76 is shown.

[0125] The first cleaning step S74 and the second cleaning step S75 are respectively the same as the first cleaning step S64 and the second cleaning step S65 of the sixth embodiment.

[0126] The third cleaning step S76 is the same as the third cleaning step S26 of the second embodiment.

[0127] In the seventh embodiment, first, in the first cleaning step S74, the Si film deposited inside the processing container 110 and the exhaust pipe 131 is removed. Next, in the second cleaning step S75, the Si film deposited on the heat-insulating cylinder 156 and the substrate holder 150 is removed. Then, in the third cleaning step S76, the products containing Cl and Si generated in the second cleaning step S75 are removed. This prevents damage to the substrate holder 150, even when the substrate holder 150 is formed of a SiC member.

[0128] In the seventh embodiment, the third cleaning step S76 is performed without the substrate holder 150 in the processing container 110. This prevents the substrate holder 150 from being exposed to the F2 gas, significantly reducing damage to the substrate holder 150.

[0129] In the seventh embodiment, the amount of Si film removed by the Cl2 gas is small, so the amount of SiCl4 and the like generated in the second cleaning step S75 is also small. Therefore, the processing time of the third cleaning step S76 can be shortened.

[0130] In addition, in the seventh embodiment, the first cleaning step S74 can be performed while the substrate W mounted on the substrate holder 150 is being cooled and while the wafer transport mechanism 27 is removing the substrate W from the substrate holder 150. Therefore, the time required for the cleaning process can be shortened, and productivity can be improved.

[0131] The embodiments disclosed herein are by way of example only and should not be construed as limiting. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the spirit thereof.

[0132] This international application claims the benefit of priority based on Japanese Patent Application No. 2019-150680, filed on August 20, 2019, the entire contents of which are incorporated herein by reference.

[0133] Description of Reference Numerals

[0134] 1Substrate processing equipment

[0135] 90 Control Department

[0136] 100 Heat Treatment Department

[0137] 110 processing container

[0138] 120 Gas supply unit

[0139] 122 Clean gas supply unit

[0140] 130 exhaust section

[0141] 131 exhaust pipe

[0142] 150 substrate holding device

[0143] 156 insulation tube

[0144] W substrate

Claims

1. A cleaning method comprising the following steps: A first cleaning step of supplying a halogen-containing gas containing no fluorine into the interior of a processing container that can be exhausted via an exhaust pipe to remove a film as a deposit; and A second cleaning step, after the first cleaning step, supplies a fluorine-containing gas to at least one of the interior of the processing container and the interior of the exhaust pipe to remove at least products deposited inside the exhaust pipe. in, The film is a silicon film, a germanium film or a silicon-germanium film, The product is generated by a reaction between the halogen-containing gas and silicon, germanium, or silicon germanium contained in the film in the first cleaning step, and the product contains the silicon, germanium, or silicon germanium and the halogen in the halogen-containing gas.

2. The cleaning method according to claim 1, wherein The step of supplying the halogen-containing gas for cleaning is performed while the SiC member is present inside the processing container.

3. The cleaning method according to claim 2, wherein: The step of supplying the fluorine-containing gas for cleaning is performed in a state where no SiC member is present in the interior of the processing container.

4. The cleaning method according to claim 2, wherein: The step of supplying the fluorine-containing gas for cleaning is performed while the SiC member is present in the processing container.

5. The cleaning method according to any one of claims 2 to 4, wherein Before the step of supplying the halogen-containing gas for cleaning, the method further includes supplying a film-forming gas into the processing container for film formation.

6. The cleaning method according to claim 5, wherein: The step of supplying the halogen-containing gas for cleaning is performed after the step of forming the film is performed a plurality of times.

7. The cleaning method according to claim 5, wherein: After the film forming step and before the halogen-containing gas supplying step for cleaning, the method further includes supplying a fluorine-containing gas into the processing container for cleaning in a state where no SiC member is present.

8. The cleaning method according to claim 7, wherein: The step of supplying the halogen-containing gas for cleaning is performed after the step of forming the film a plurality of times and the step of supplying the fluorine-containing gas for cleaning the interior of the processing container without the SiC member being present therein.

9. The cleaning method according to any one of claims 2 to 4, wherein: The SiC member includes at least one of a substrate holder for mounting a substrate, a dummy substrate mounted on the substrate holder, and a heat-insulating cylinder for placing the substrate holder.

10. The cleaning method according to any one of claims 1 to 4, wherein The halogen-containing gas is a chlorine-containing gas.

11. The cleaning method according to claim 10, wherein: The chlorine-containing gas is Cl2 gas or HCl gas.

12. A cleaning method comprising the following steps: A step of supplying a fluorine-free halogen-containing gas into the interior of a processing container that can be exhausted via an exhaust pipe to perform cleaning; and After the step of supplying the halogen-containing gas for cleaning, a step of supplying a fluorine-containing gas to at least one of the interior of the processing container and the interior of the exhaust pipe for cleaning is performed. in, The step of supplying the halogen-containing gas for cleaning is performed while the SiC member is present inside the processing container. Before the step of supplying the halogen-containing gas for cleaning, the method further comprises the step of supplying a film-forming gas into the interior of the processing container for film formation. After the film forming step and before the halogen-containing gas supplying step for cleaning, the method further includes supplying a fluorine-containing gas into the processing container for cleaning in a state where no SiC member is present.

13. A substrate processing apparatus comprising: Processing containers; a gas supply portion for supplying a cleaning gas into the interior of the processing container; an exhaust portion including an exhaust pipe for exhausting the clean gas from the interior of the processing container; and Control Department, The control unit controls the gas supply unit in such a manner that the following steps are sequentially performed: a first cleaning step of supplying a halogen-containing gas that does not contain fluorine into the interior of the processing container to remove a film that is a deposit; and In the second cleaning step, a fluorine-containing gas is supplied to at least one of the interior of the processing container and the exhaust pipe to remove at least the product deposited inside the exhaust pipe. in, The film is a silicon film, a germanium film or a silicon-germanium film, The product is generated by a reaction between the halogen-containing gas and silicon, germanium, or silicon germanium contained in the film in the first cleaning step, and the product contains the silicon, germanium, or silicon germanium and the halogen in the halogen-containing gas.

14. A substrate processing apparatus comprising: Processing containers; a gas supply portion for supplying a cleaning gas into the interior of the processing container; an exhaust portion including an exhaust pipe for exhausting the clean gas from the interior of the processing container; and Control Department, The control unit controls the gas supply unit in such a manner that the following steps are sequentially performed: supplying a halogen-containing gas containing no fluorine to the interior of the processing container for cleaning; and a step of supplying a fluorine-containing gas to at least one of the interior of the processing container and the exhaust pipe for cleaning; in, The step of supplying the halogen-containing gas for cleaning is performed while the SiC member is present inside the processing container. Before the step of supplying the halogen-containing gas for cleaning, the control unit further controls the gas supply unit to supply a film-forming gas into the processing container for film formation. After the film forming process and before the halogen-containing gas is supplied for cleaning, the control unit further controls the gas supply unit to supply fluorine-containing gas into the interior of the processing container for cleaning in a state where no SiC component is present inside the processing container.

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