Substrate processing apparatus and substrate position adjustment method

Abstract

The present invention relates to a substrate processing apparatus and a substrate position adjustment method for processing a substrate. The substrate processing apparatus of the present invention includes: a susceptor having a holding surface that holds a circular plate-shaped substrate in a horizontal posture; a rotation unit that rotates the susceptor about a vertical rotation axis; a heating unit that heats a peripheral portion of the substrate held on the holding surface; an eccentricity measurement unit having a light emitting portion that emits light and a light receiving portion that receives the light emitted from the light emitting portion, which measures an eccentricity of the substrate with respect to the rotation axis when the peripheral portion of the substrate held on the holding surface is located in a detection space between the light emitting portion and the light receiving portion; a centering unit that moves the substrate on the holding surface with respect to the susceptor so that a central portion of the substrate approaches the rotation axis; and an atmosphere replacement unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space.

Description

[0001] Related Applications

[0002] This application corresponds to Japanese Patent Application No. 2020-159314 filed on September 24, 2020 with the Japan Patent Office, the disclosure of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to a substrate processing apparatus that processes a substrate, and a substrate position adjustment method using the substrate processing apparatus. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an organic EL (Electroluminescence) display device, a substrate for a FPD (Flat Panel Display), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like. BACKGROUND

[0004] In Japanese Patent Application Publication No. 2017-11015, a substrate processing apparatus is disclosed that includes a circular plate-shaped rotary chuck smaller than a substrate, a ring-shaped heater along a lower surface peripheral portion of the substrate, and a nozzle that supplies a processing liquid to an upper surface of the substrate. In the substrate processing apparatus, while the peripheral portion of the substrate is heated, the substrate processing of processing the peripheral portion of the upper surface of the substrate with the processing liquid is performed. SUMMARY

[0005] In the substrate processing apparatus disclosed in Japanese Patent Application Publication No. 2017-11015, the substrate is sometimes eccentrically arranged when the substrate is arranged to the rotary chuck.

[0006] Therefore, an object of the present application is to provide a substrate processing apparatus and a substrate position adjustment method that can reduce the eccentricity of a substrate.

[0007] One embodiment of the present application provides a substrate processing apparatus including: a base having a holding surface that holds a circular plate-shaped substrate in a horizontal posture; a rotation unit that rotates the base around a vertical rotation axis; a heating unit that heats a peripheral portion of the substrate held on the holding surface; an eccentricity measurement unit having a light emitting portion that emits light and a light receiving portion that receives the light emitted from the light emitting portion, the eccentricity measurement unit measuring an eccentricity of the substrate with respect to the rotation axis when the peripheral portion of the substrate held on the holding surface is located in a detection space between the light emitting portion and the light receiving portion; a centering unit that moves the substrate on the holding surface with respect to the base to bring a central portion of the substrate close to the rotation axis; and an atmosphere replacement unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space.

[0008] The substrate processing apparatus includes an eccentricity measuring unit that measures an eccentricity of the substrate with respect to a rotation axis of the pedestal when the peripheral portion of the substrate held on the holding surface is located between the light emitting portion and the light receiving portion. Based on the eccentricity, a centering unit moves the substrate with respect to the pedestal in such a manner that the central portion of the substrate is close to the rotation axis, thereby reducing the eccentricity of the substrate.

[0009] Since the peripheral portion of the substrate is heated by the heating unit, an atmosphere fluctuation occurs in the space near the peripheral portion of the substrate. In detail, the atmosphere with a relatively high temperature in contact with the peripheral portion of the substrate is mixed with the atmosphere around it, and the atmosphere is disturbed. Due to the disturbance of the atmosphere, the refractive index of the space near the peripheral portion of the substrate becomes uneven.

[0010] Since the eccentricity of the substrate is measured in a state where the peripheral portion of the substrate is located in the detection space between the light emitting portion and the light receiving portion, an atmosphere fluctuation occurs in the detection space, and the refractive index of the detection space becomes uneven. When the refractive index of the space becomes uneven, the arrival position of the light emitted from the light emitting portion shifts, and the detection accuracy of the eccentricity measuring unit deteriorates.

[0011] Therefore, if the configuration of the atmosphere existing in the detection space is replaced by the atmosphere outside the detection space using the atmosphere replacing unit, the atmosphere fluctuation in the detection space can be eliminated when the peripheral portion of the substrate is located in the detection space. As a result, the detection accuracy of the eccentricity measuring unit can be improved, and thus the eccentricity of the substrate can be reduced well.

[0012] In one embodiment of the present application, the atmosphere replacing unit includes a gas supply unit that supplies the gas to the detection space. Therefore, the atmosphere in the detection space is pushed out by the gas supplied from the gas supply unit, and is well replaced by the gas supplied from the gas supply unit.

[0013] In one embodiment of the present application, the heating unit includes a heater that faces the peripheral portion of the substrate held on the holding surface. The gas supply unit sprays the gas to a portion between the peripheral portion of the substrate held on the holding surface and the heater in the detection space.

[0014] The atmosphere between the peripheral portion of the substrate and the heater is easily heated by the heater, and a temperature difference from the surrounding atmosphere easily occurs. Therefore, the atmosphere between the peripheral portion of the substrate and the heater is particularly likely to fluctuate. Therefore, if the gas is sprayed to the space between the peripheral portion of the substrate and the heater, the atmosphere between the peripheral portion of the substrate and the heater that causes the fluctuation in the detection space can be effectively replaced. Therefore, the atmosphere fluctuation in the detection space can be further eliminated.

[0015] In one embodiment of the present application, the gas supply unit includes a plurality of gas ejection ports arranged in the direction opposite to the light emitting portion and the light receiving portion. Therefore, the atmosphere in the detection space is replaced by the gas ejected from the plurality of gas ejection ports arranged in the opposite direction, and the detection accuracy of the eccentricity measurement unit can be improved.

[0016] In one embodiment of the present application, the gas supply unit includes a plurality of fixed gas nozzles each having a plurality of gas ejection ports, and a mounting plate on which the plurality of fixed gas nozzles are mounted. The fixed gas nozzle includes a mounting portion mounted to the mounting plate, and an ejection portion formed integrally with the mounting portion and provided with the gas ejection ports.

[0017] The plurality of fixed gas nozzles are mounted to the mounting plate, and the mounting portion and the ejection portion of the fixed gas nozzle are formed integrally. Therefore, the fixed gas nozzle can be firmly fixed to the mounting plate, and the positional relationship between the fixed gas nozzles can be firmly fixed. Therefore, the gas can be supplied to the detection space accurately.

[0018] In one embodiment of the present application, the gas supply unit includes a movable gas nozzle head that moves together with the light emitting portion and the light receiving portion, supplies the gas to the detection space, and moves between a detection position where the peripheral portion of the substrate held on the holding surface is located in the detection space, and a retreat position where the peripheral portion of the substrate held on the holding surface is located outside the detection space. Therefore, when the movable gas nozzle head is located at the detection position, the gas is ejected to the detection space, and the space in the detection space is replaced by the gas, and thus the detection accuracy of the eccentricity measurement unit can be improved. Therefore, the eccentricity of the substrate can be reduced favorably.

[0019] In one embodiment of the present application, the substrate processing apparatus further includes a chamber that accommodates the pedestal. The atmosphere replacement unit includes a gas supply and exhaust unit that supplies the gas to the space in the chamber, and exhausts the gas from the space in the chamber. Therefore, when the space in the chamber is supplied with the gas and exhausted, the atmosphere in the detection space can be replaced favorably by the atmosphere outside the detection space.

[0020] In one embodiment of the present invention, the substrate processing apparatus further includes a shield member that surrounds the substrate held on the holding surface, and is configured to move the shield member between an upper position in which an upper end portion of the shield member is positioned above the upper surface of the substrate, and a lower position in which the upper end portion of the shield member is positioned below the upper surface of the substrate. The exhaust and supply unit includes an exhaust pipe that exhausts the atmosphere in the chamber, and an air flow forming unit that forms an air flow in the chamber toward the exhaust pipe. The shield member switches the path of the air flow as follows: when the shield member is in the upper position, the air flow passes between the peripheral portion of the substrate held on the holding surface and the shield member, and when the shield member is in the lower position, the air flow passes outside the shield member.

[0021] According to the above configuration, when the shield member is in the upper position, the air flow in the chamber toward the exhaust pipe passes between the peripheral portion of the substrate and the shield member, and when the shield member is in the lower position, the air flow passes outside the shield member.

[0022] Therefore, by placing the shield member in the upper position, the atmosphere around the peripheral portion of the substrate can be replaced with gas carried by the air flow. Thus, when the peripheral portion of the substrate is in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentricity measuring unit can be improved, and thus the eccentricity of the substrate can be reduced favorably.

[0023] In one embodiment of the present invention, the centering unit includes an elevator configured to lift the substrate held on the holding surface, or place the lifted substrate on the holding surface, and an elevator horizontal movement mechanism that moves the elevator horizontally to bring the central portion of the substrate close to the rotation axis.

[0024] According to the above configuration, the elevator is moved horizontally in a state in which the substrate held on the holding surface is lifted by the elevator, and the central portion of the substrate is brought close to the rotation axis, and thus the eccentricity can be reduced.

[0025] In one embodiment of the present invention, a plurality of elevators are provided. The plurality of elevators have a facing portion that faces the substrate from below the substrate held on the holding surface. The centering unit further includes an elevator vertical movement mechanism that moves the facing portion in a vertical direction between a first position above the holding surface and a second position below the holding surface.

[0026] According to the above configuration, by moving the plurality of elevators to the first position, the substrate can be lifted by the plurality of elevators and supported from below. By moving the plurality of elevators that support the substrate in the horizontal direction with respect to the base, the central portion of the substrate is brought close to the rotation axis, and thus the eccentricity can be reduced. Subsequently, by moving the plurality of elevators to the second position, the substrate can be held on the holding surface.

[0027] In one embodiment of the present application, a plurality of the elevators are provided. The plurality of the elevators include a first elevator having a first facing surface facing the peripheral portion of the substrate held on the holding surface from the horizontal direction, and a second elevator having a second facing surface facing the peripheral portion of the substrate held on the holding surface from the horizontal direction on the opposite side from the first facing surface. The elevator horizontal movement mechanism includes a first elevator horizontal movement mechanism individually horizontally moving the first elevator and the second elevator, and a second elevator horizontal movement mechanism integrally horizontally moving the first elevator and the second elevator. The first facing surface and the second facing surface are inclined with respect to the horizontal direction in such a manner as to move away from each other as they move upward.

[0028] According to the configuration, the first horizontal movement mechanism can individually move the first elevator and the second elevator in the horizontal direction. By the first horizontal movement mechanism, the first elevator and the second elevator are moved in the horizontal direction in such a manner as to move closer to each other, whereby the first facing surface and the second facing surface come into contact with the peripheral portion of the substrate. The first facing surface and the second facing surface are inclined with respect to the horizontal direction in such a manner as to move away from each other as they move upward. Therefore, the first facing surface and the second facing surface can lift the substrate from the holding surface and support it from below. By moving the first elevator and the second elevator in the horizontal direction using the second elevator horizontal movement mechanism while maintaining the state in which the substrate is supported from below by the first facing surface and the second facing surface, the central portion of the substrate can be moved closer to the rotation axis. Thus, the eccentricity can be reduced.

[0029] Another embodiment of the present application provides a substrate position adjustment method including: a substrate holding step of holding a substrate in a horizontal posture on a holding surface of a pedestal in such a manner that a heater faces a peripheral portion of the substrate; an atmosphere replacement step of replacing an atmosphere existing in a detection space with an atmosphere outside the detection space in a state in which the peripheral portion of the substrate is positioned between a light emitting portion and a light receiving portion of a sensor, that is, the detection space; an eccentricity measurement step of rotating the pedestal around a vertical rotation axis while detecting an eccentricity of the substrate with respect to the rotation axis using the sensor during the atmosphere replacement step; and an alignment step of moving the substrate with respect to the pedestal based on the eccentricity detected by the eccentricity measurement step, thereby moving a central portion of the substrate closer to the rotation axis.

[0030] According to the method, by using the atmosphere replacement step, the atmosphere existing in the detection space between the light emitting portion and the light receiving portion is replaced to the outside of the detection space, whereby the fluctuation of the atmosphere in the detection space can be eliminated. If the eccentricity of the substrate is measured by the sensor while continuing to replace the atmosphere existing in the detection space, the eccentricity can be measured in a state where the fluctuation of the atmosphere in the detection space is eliminated. Thus, the eccentricity can be detected with high accuracy, so the eccentricity of the substrate can be reduced favorably.

[0031] According to another embodiment of the present application, the atmosphere replacement step includes a gas supply step of supplying the gas to the detection space. Thus, the atmosphere existing in the detection space is pushed out by the gas supplied from the gas supply unit, and is favorably replaced by the gas supplied from the gas supply unit.

[0032] According to another embodiment of the present application, the atmosphere replacement step includes a gas flow forming step of forming a gas flow toward the exhaust pipe through the peripheral portion of the substrate and the shield in the cavity housing the shield and the pedestal by arranging the upper end portion of the shield at the upper position, and the shield surrounds the substrate, and is configured to move the upper end portion of the shield between the upper position located above the upper surface of the substrate and the lower position located below the upper surface of the substrate.

[0033] According to the method, when the shield is at the upper position, the gas flow in the cavity toward the exhaust pipe passes between the peripheral portion and the shield, and when the shield is at the lower position, the gas flow passes outside the shield. Thus, by arranging the shield at the upper position, the atmosphere around the peripheral portion of the substrate can be replaced by the gas carried by the gas flow. Thus, when the peripheral portion of the substrate is in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentricity measuring unit can be improved, so the eccentricity of the substrate can be reduced favorably.

[0034] The above and further objects, features and effects of the present application will become apparent from the following description of the embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 is a diagrammatic plan view showing the internal configuration of a substrate processing apparatus according to a first embodiment of the present application.

[0036] Figure 2 is a schematic view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.

[0037] Figure 3 is a schematic plan view of a spin chuck and its periphery provided in the processing unit.

[0038] Figure 4is a sectional view of the periphery of a heating unit provided in the processing unit.

[0039] Figure 5 is a schematic diagram for explaining the configuration of a moving gas nozzle head and a sensor provided in the processing unit.

[0040] Figure 6 is a sectional view of the periphery of a centering unit provided in the processing unit.

[0041] Figure 7 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus.

[0042] Figure 8 is a flowchart for explaining an example of the substrate processing performed by the substrate processing apparatus.

[0043] Figure 9 is a flowchart for explaining the substrate position adjustment processing (step S2) in the substrate processing.

[0044] Figures 10A-10C is a schematic diagram for explaining the substrate condition when the substrate position adjustment processing is performed.

[0045] Figure 11 is a graph for explaining the difference in the measured value of the eccentricity amount before and after the atmosphere replacement in the detection space.

[0046] Figure 12 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus of the second embodiment.

[0047] Figure 13 is a schematic plan view of the processing unit of the second embodiment.

[0048] Figure 14A is a schematic diagram of a plurality of fixed gas nozzles provided in the processing unit as viewed from the horizontal direction.

[0049] Figure 14B is a perspective view of the periphery of the plurality of fixed gas nozzles.

[0050] Figure 14C is a plan view of the plurality of fixed gas nozzles.

[0051] Figure 15 is a sectional view of the periphery of a centering unit provided in the processing unit of the second embodiment.

[0052] Figure 16 is a flowchart for explaining the substrate position adjustment processing (step S2) in the substrate processing of the second embodiment.

[0053] Figures 17A-17C is a schematic view for explaining a substrate condition at the time of performing an example of a substrate position adjustment process of Embodiment 2.

[0054] Figure 18A and Figure 18B is a schematic view for explaining a variation example of an atmosphere replacement step performed in the substrate process of Embodiment 2. DETAILED DESCRIPTION

[0055] <Embodiment 1>

[0056] Figure 1 is a diagrammatic plan view showing an internal configuration of a substrate processing apparatus 1 of an embodiment of the present application.

[0057] The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W such as silicon wafers one by one. In the present embodiment, the substrate W is a circular plate-shaped substrate. The substrate W is, for example, a semiconductor wafer.

[0058] The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W with a processing liquid, a load port LP that places a carrier C that accommodates a plurality of substrates W processed by the processing units 2, a transfer robot IR that transfers the substrate W between the load port LP and the processing units 2, a transfer robot CR that transfers the substrate W between the transfer robot IR and the processing units 2, and a controller 3 that controls the substrate processing apparatus 1.

[0059] The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing units 2. The plurality of processing units 2 have, for example, the same configuration.

[0060] Each processing unit 2 includes a spin chuck 6 that holds the substrate W horizontally while rotating the substrate W about a rotation axis Al (a vertical axis), a process cup 7 that surrounds the spin chuck 6 in plan view, and a chamber 8 that accommodates the spin chuck 6 and the process cup. The rotation axis Al is a vertical straight line that passes through a central portion of the substrate W.

[0061] An entrance and exit for carrying in and out the substrate W by the transfer robot CR is formed in the chamber 8. A shutter unit (not shown) that opens and closes the entrance and exit is provided in the chamber 8.

[0062] Figure 2 is a schematic view for explaining a configuration example of the processing unit 2. Figure 3 is a diagrammatic plan view of the spin chuck 6 and its periphery.

[0063] The rotary chuck 6 holds the substrate W horizontally and rotates the substrate W about a vertical rotation axis Al that passes through the central portion of the substrate W. The rotary chuck 6 is an example of a substrate holding and rotating unit that holds the substrate W horizontally and rotates the substrate W about the rotation axis Al. The rotary chuck 6 includes a rotary base 21 (base), a rotary shaft 22, a rotary motor 23, and a motor housing 24.

[0064] The rotary base 21 has a holding surface 21a that holds the substrate W in a horizontal posture. The holding surface 21a is, for example, circular in plan view. The holding surface 21a is, for example, the upper surface of the rotary base 21. The diameter of the holding surface 21a is smaller than the diameter of the substrate W.

[0065] The rotary shaft 22 is a hollow shaft. The rotary shaft 22 extends in the vertical direction along the rotation axis Al. The rotation axis Al is a vertical axis that passes through the central portion of the holding surface 21a of the rotary base 21. The rotary base 21 is joined to the upper end of the rotary shaft 22. The rotary base 21 is fitted to the upper end of the rotary shaft 22.

[0066] In the rotary base 21 and the rotary shaft 22, an attraction path 25 is inserted. The attraction path 25 has an attraction port 25a that is exposed from the center of the holding surface 21a of the rotary base 21. The attraction path 25 is joined to an attraction pipe 26. The attraction pipe 26 is joined to an attraction unit 27 such as a vacuum pump.

[0067] In the attraction pipe 26, an attraction valve 28 that opens and closes the path is fitted. By opening the attraction valve 28, the substrate W disposed on the holding surface 21a of the rotary base 21 is attracted, and thus the substrate W is adsorbed to the holding surface 21a. The rotary base 21 is an example of a substrate holding unit. The holding surface 21a is also referred to as an adsorption surface that adsorbs the substrate W. The rotary chuck 6 is also referred to as an adsorption device that adsorbs the substrate W to the adsorption surface.

[0068] The rotary base 21 is rotated by rotating the rotary shaft 22 by the rotary motor 23. Thus, the substrate W is rotated about the rotation axis Al together with the rotary base 21. The rotary motor 23 is an example of a rotating unit that rotates the substrate W about the rotation axis Al. The motor housing 24 accommodates the rotary motor 23 and the rotary shaft 22. The upper end of the rotary shaft 22 protrudes from the motor housing 24.

[0069] The process cup 7 includes a plurality of guards 30 that catch liquid scattered from the substrate W held on the holding surface 21a of the rotary base 21, a plurality of cups 31 that catch liquid guided downward by the plurality of guards 30, an exhaust barrel 33 that surrounds the plurality of guards 30 and the plurality of cups 31 in plan view, and an exhaust pipe 34 joined to the exhaust barrel 33.

[0070] In this embodiment, an example in which two guards 30 (a first guard 30A and a second guard 30B) and two cups 31 (a first cup 31A and a second cup 31B) are provided is shown.

[0071] The first cup 31A and the second cup 31B each have a shape of a ring-shaped groove that opens upward.

[0072] The first guard 30A is disposed so as to surround the rotary base 21. The second guard 30B is disposed so as to surround the rotary base 21 at a position closer to the rotary base 21 than the first guard 30A.

[0073] The first guard 30A and the second guard 30B each have a substantially cylindrical shape. The upper end portion of each guard 30 is inclined inward toward the rotary base 21 side (the center side of the guard 30).

[0074] The center side of the guard 30 is also the inner side in the rotation radial direction of the substrate W. The opposite side of the center side of the guard 30 is also the outer side in the rotation radial direction of the substrate W. The first guard 30A and the second guard 30B are disposed on the same axis, and the center side of the guard 30 is the center side of the first guard 30A and also the center side of the second guard 30B.

[0075] The first guard 30A is disposed so as to surround the rotary base 21. The second guard 30B (inner side guard) is disposed so as to surround the rotary base 21 at a position closer to the center side of the first guard 30A than the first guard 30A (outer side guard).

[0076] In detail, the first guard 30A has a first cylindrical portion 35A that surrounds the rotary base 21 when viewed from above, and a first extension portion 36A that extends from the upper end of the first cylindrical portion toward the center side of the guard 30. The first extension portion 36A has an inclined portion that is inclined with respect to the horizontal direction in such a way as to be inclined upward as it goes toward the center side of the guard 30. The first extension portion 36A is annular when viewed from above.

[0077] The second guard 30B includes a second cylindrical portion 35B that is disposed closer to the center side of the guard 30 than the first cylindrical portion 35A and surrounds the rotary base 21 when viewed from above, and a second extension portion 36B that extends from the upper end of the second cylindrical portion 35B toward the center side of the guard 30. The second extension portion 36B faces the first extension portion 36A from below. The second extension portion 36B has an inclined portion that is inclined with respect to the horizontal direction in such a way as to be inclined upward as it goes toward the center side of the guard 30. The second extension portion 36B is annular when viewed from above.

[0078] The first cup 31A is formed integrally with the second shield 30B and receives the processing liquid guided downward by the first shield 30A. The second cup 31B receives the processing liquid guided downward by the second shield 30B. The processing liquid received by the first cup 31A is recovered by a first processing liquid recovery path (not shown) connected to the lower end of the first cup 31A. The processing liquid received by the second cup 31B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cup 31B.

[0079] The processing unit 2 includes a shield lifting unit 37 that lifts the first shield 30A and the second shield 30B upward and downward, respectively. The shield lifting unit 37 lifts the first shield 30A and the second shield 30B individually upward and downward between a lower position and an upper position.

[0080] When the first shield 30A and the second shield 30B are both in the upper position, the processing liquid scattered from the substrate W is received by the second shield 30B. When the second shield 30B is in the lower position and the first shield 30A is in the upper position, the processing liquid scattered from the substrate W is received by the first shield 30A.

[0081] The upper position of each shield 30 is a position in which the upper end of the shield 30 is positioned above the position of the substrate W held by the rotary chuck 6, that is, the holding position (the position of the substrate W shown in the drawing). Figure 2 The lower position of each shield 30 is a position in which the upper end of the shield 30 is positioned below the holding position.

[0082] When the first shield 30A and the second shield 30B are both in the lower position, the corresponding transfer robot CR can transfer the substrate W into or out of the chamber 8.

[0083] The shield lifting unit 37 includes a first shield lifting unit that lifts the first shield 30A and a second shield lifting unit that lifts the second shield 30B.

[0084] The configuration of the first shield lifting unit is not particularly limited, but the first shield lifting unit can include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism.

[0085] The first shield lifting unit includes, for example, a first actuator (not shown) such as a motor, and a first lifting motion transmission mechanism (not shown) connected to the first shield 30A and transmitting a driving force given by the first actuator to the first shield 30A to lift the first shield 30A. The first lifting motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

[0086] The configuration of the second guard lifting unit is not particularly limited, but the second guard lifting unit can include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism.

[0087] The second guard lifting unit includes, for example, a second actuator (not shown) such as a motor, and a second lifting motion transmission mechanism (not shown) coupled to the second guard 30B to transmit a driving force given by the second actuator to the second guard 30B to lift the second guard 30B. The second lifting motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

[0088] The processing unit 2 also includes a peripheral nozzle head 9, an airflow forming unit 10, a heating unit 11, a moving gas nozzle head 12, a sensor 13, and a centering unit 14.

[0089] The peripheral nozzle head 9 includes a plurality of peripheral nozzles 40 that supply a processing fluid to a peripheral portion of an upper surface of the substrate W, and a nozzle support member 41 that supports the plurality of peripheral nozzles 40. The peripheral portion of the upper surface of the substrate W is a region including an outer peripheral end (front end) of the substrate W and a portion near the outer peripheral end of the upper surface of the substrate W.

[0090] In each of the peripheral nozzles 40, a processing fluid pipe 42 that guides a processing fluid to the corresponding peripheral nozzle 40 is connected. In each of the processing fluid pipes 42, a processing fluid valve 43 that opens and closes a flow path in the corresponding processing fluid pipe 42 is installed.

[0091] The plurality of peripheral nozzles 40 include, for example, a first peripheral chemical liquid nozzle 40A that ejects a chemical liquid such as APM (ammonia hydrogen peroxide mixture), a second peripheral chemical liquid nozzle 40B that ejects a chemical liquid such as hydrofluoric acid (HF), a peripheral cleaning liquid nozzle 40C that ejects a cleaning liquid such as carbonated water, and a peripheral gas nozzle 40D that ejects a gas such as nitrogen (N2).

[0092] The chemical liquid ejected from the first peripheral chemical liquid nozzle 40A and the second peripheral chemical liquid nozzle 40B is not limited to APM or hydrofluoric acid. The chemical liquid ejected from the peripheral nozzle 40 can also be, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia, hydrogen peroxide, an organic acid (for example, citric acid, oxalic acid, or the like), an organic base (for example, TMAH: tetramethylammonium hydroxide, or the like), a surfactant, and a preservative. As an example of mixing such chemical liquids, SPM (sulfuric acid / hydrogen peroxide mixture) or the like is given in addition to APM. APM is also referred to as SC1 (Standard Clean 1).

[0093] The cleaning liquid sprayed from the peripheral cleaning liquid nozzle 40C is not limited to carbonated water. The cleaning liquid sprayed from the peripheral nozzle 40 can also be a liquid containing at least one of DIW (Deionized Water), carbonated water, electrolytic ion water, dilute concentration (e.g., 1 ppm or more and 100 ppm or less) of hydrochloric acid water, dilute concentration (e.g., 1 ppm or more and 100 ppm or less) of ammonia water, and reduced water (hydrogen water).

[0094] The gas sprayed from the peripheral gas nozzle 40D is not limited to nitrogen. The gas sprayed from the peripheral nozzle 40 can also be air. Furthermore, the gas sprayed from the peripheral gas nozzle 40D can also be an inert gas other than nitrogen. The inert gas other than nitrogen is, for example, a rare gas such as argon.

[0095] The head support arm 45 supporting the peripheral nozzle head 9 is linked to the nozzle support member 41. The peripheral nozzle head 9 is moved in the horizontal direction and the vertical direction by moving the head support arm 45 with the peripheral nozzle moving unit 44. The peripheral nozzle head 9 is configured to move in the horizontal direction between a central position and an initial position (a retracted position). If any one of the plurality of processing fluid valves 43 is opened when the peripheral nozzle head 9 is positioned at a peripheral position between the central position and the initial position, a processing fluid corresponding to the peripheral portion of the upper surface of the substrate W is supplied from the corresponding peripheral nozzle 40.

[0096] The peripheral nozzle moving unit 44 includes an arm vertical movement mechanism (not shown) that moves the head support arm 45 in the vertical direction, and an arm horizontal movement mechanism (not shown) that moves the head support arm 45 in the horizontal direction.

[0097] The head support arm 45 can be a direct-acting type or a rotary-acting type. In the case where the head support arm 45 is a direct-acting arm, the head support arm 45 is moved horizontally in the direction in which the head support arm 45 extends. In the case where the head support arm 45 is a rotary-acting arm, the head support arm 45 is moved horizontally by rotating around a specific vertical axis.

[0098] The arm horizontal movement mechanism can also include at least one of, for example, a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm horizontal movement mechanism includes, for example, a horizontal movement actuator (not shown) such as a motor, and a horizontal movement transmission mechanism (not shown) linked to the head support arm 45, which transmits a driving force given by the actuator to the head support arm 45 to move the head support arm 45 horizontally. The horizontal movement transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

[0099] The arm vertical movement mechanism can also include at least one of, for example, a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm vertical movement mechanism includes a lift actuator (not shown), such as a motor, and a lift movement transmission mechanism (not shown) coupled to the head support arm 45 to transmit a driving force given by the lift actuator to the head support arm 45 to lift the head support arm 45. The lift movement transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

[0100] The chamber 8 includes a substantially quadrangular cylindrical side wall 8A that surrounds the rotary chuck 6 and the process cup 7, an upper wall 8B disposed above the rotary chuck 6, and a lower wall 8C that supports the rotary chuck 6.

[0101] The airflow forming unit 10 includes an FFU (fan filter unit) 10A that supplies clean air (air filtered by a filter) and a flow straightening plate 10B disposed below a supply port 8a that is an opening in the upper wall 8B of the chamber 8.

[0102] The airflow forming unit 10 is disposed on the supply port 8a. The supply port 8a is provided at an upper end portion of the chamber 8, and an exhaust duct 34 is disposed at a lower end portion of the chamber 8. An upstream end 34a of the exhaust duct 34 is disposed in the chamber 8, and a downstream end of the exhaust duct 34 is disposed outside the chamber 8.

[0103] The FFU 10A supplies clean air into the chamber 8 via the supply port 8a. The clean air supplied into the chamber 8 is sucked into the exhaust duct 34 and exhausted from the chamber 8. Thus, a uniform downward flow of clean air is formed in the chamber 8 that flows downward from the flow straightening plate 10B. Various processes (substrate processes described later) on the substrate W are performed in a state in which the downward flow of clean air is formed. In this way, the airflow forming unit 10 and the exhaust duct 34 constitute a supply and exhaust unit that performs supply of air to a space in the chamber 8 and exhaust of air from the space in the chamber 8.

[0104] The flow rate of the downward flow formed in the chamber 8 by the airflow forming unit 10 is, for example, 1.3 m 3 / min or more and 7.0 m 3 / min or less.

[0105] The heating unit 11 is a unit that heats the peripheral edge portion of the substrate W held on the holding surface 21a. The peripheral edge portion of the substrate W is a portion of the substrate W that includes the outer peripheral end (front end) and a portion near the outer peripheral end.

[0106] The heating unit 11 includes: a top-view annular heater 50 having a facing surface 50a facing the periphery of the lower surface of the substrate W, and a gas delivery unit 55 for delivering gases such as nitrogen into the heater 50. A power supply unit 57, such as a power source, is connected to the heater 50 via a feed wire 56. The facing surface 50a faces the lower surface of the substrate W at a distance of, for example, 2 mm or more and 5 mm or less.

[0107] like Figure 3 As shown, a lower peripheral nozzle head 17 with a nozzle for supplying processing fluid to the lower surface of the substrate W may also be provided in the processing unit 2. In this case, a notch 50b is provided in the heater 50 to receive the lower peripheral nozzle head 17 and to cut off a portion of the circumference of the heater 50.

[0108] The lower peripheral nozzle head 17 includes: a plurality of lower peripheral nozzles 75, and a nozzle support member 76 supporting the plurality of lower peripheral nozzles 75. A lower processing fluid piping 77 is connected to each lower peripheral nozzle 75 to guide the processing fluid to the corresponding lower peripheral nozzle 75. A lower processing fluid valve 78 is installed in each lower processing fluid piping 77, and the lower processing fluid valve 78 opens and closes the flow path within the corresponding lower processing fluid piping 77.

[0109] The plurality of lower peripheral nozzles 75 can also be configured to spray the same liquid as the plurality of peripheral nozzles 40. Specifically, the plurality of lower peripheral nozzles 75 includes: a first lower peripheral liquid nozzle 75A that sprays a liquid such as APM; a second lower peripheral liquid nozzle 75B that sprays a liquid such as hydrofluoric acid; and a lower peripheral cleaning fluid nozzle 75C that sprays a cleaning fluid such as carbonated water. Examples of treatment fluids sprayed from the lower peripheral nozzles 75 are those sprayed from the peripheral nozzles 40 (see reference). Figure 2 Examples of the ejected processing fluid are the same fluids listed.

[0110] refer to Figure 2 The gas delivery unit 55 includes: a gas supply pipe 58 connected to the heater 50 for supplying gas into the heater 50, and a flow path opening and closing valve 59 for opening and closing the flow path in the gas supply pipe 58.

[0111] Figure 4 This is a cross-sectional view of the periphery of the heating unit 11. Gas supplied to the heater 50 via the gas delivery unit 55 is heated within the heating flow path 51 formed within the heater 50 and ejected from the gas outlet 50c formed in the heater 50. The heater 50 heats the periphery of the substrate W through radiant heat and the heated gas ejected from the gas outlet 50c. The flow rate of the gas ejected from the gas outlet 50c is, for example, 40 L / min.

[0112] The gas supplied to the heater 50 by the gas supply unit 55 is not limited to nitrogen, and can be air. In addition, the gas can be an inert gas other than nitrogen.

[0113] The heater 50 includes a heater body portion 52 made of, for example, silicon carbide (SiC) or ceramic, and a heating element 53 built in the heater body portion 52. The heating element 53 is, for example, an electric resistance heating element such as a nickel-chromium alloy wire. In this case, where the heating element 53 is an electric resistance heating element, the heater 50 is a resistance heater. The heating element 53 is provided over substantially the entire area of the heater 50 in the circumferential direction. As shown in the example of FIG. 2, the heating element 53 is provided in the form of a continuous ring having no end portion in the circumferential direction of the heater 50. Figure 3 In the case where the heater 50 is provided with the notch 50b as in the example of FIG. 3, the heating element 53 is in the form of a ring having an end portion at the position where the notch 50b is provided in the circumferential direction of the heater 50. The heating element 53 is heated by energization with the energization unit 57 (see FIG. 4). Figure 2 Unlike the example of FIG. 3, the heater 50 can be in the form of a ring having an end portion in the circumferential direction. Figure 3

[0114] The heating flow path 51 is provided over substantially the entire area of the heater 50 in the circumferential direction on the side opposite the substrate W from the heating element 53. In this case, since the heating flow path 51 is not present between the substrate W and the heating element 53, the substrate W is easily heated uniformly. In addition, the radiation heat and heat transfer from the heating element 53 to the substrate W are not hindered by the inert gas flowing through the heating flow path 51.

[0115] Unlike the example of FIG. 1, the heating flow path 51 can be provided between the substrate W and the heating element 53. Figure 4

[0116] The heater body portion 52 has, for example, a lower member 52a, an intermediate member 52b, and an upper member 52c stacked in order from the lower side to the upper side. The heating flow path 51 is formed by a recess formed in the upper surface of the lower member 52a and the portion of the lower surface of the intermediate member 52b that closes the recess.

[0117] A plurality of gas ejection ports 50c are provided in the facing surface 50a of the heater 50 so as to face the lower surface of the substrate W. The plurality of gas ejection ports 50c are arranged in the circumferential direction of the heater 50 on both sides of the heating element 53 further toward the rotation axis Al than the heating element 53 and further toward the side opposite the rotation axis Al than the heating element 53, as viewed in plan. The plurality of gas ejection ports 50c are connected to the heating flow path 51 via each of a plurality of connection flow paths 52d formed in the upper member 52c and the intermediate member 52b.

[0118] ​​The heater 50 heats the substrate W by radiating the heat ray H of infrared rays from the lower surface of the substrate W toward the surface 50a by the heat generation of the heat generating body 53. The gas flow supplied to the heater 50 by the gas supply unit 55 is introduced into the heating flow path 51 and is preliminarily heated by the heat generating body 53 during the flow through the heating flow path 51. The heated gas is ejected from the corresponding gas ejection port 50c toward the annular space SP1 between the peripheral portion of the lower surface of the substrate W and the surface 50a of the heater 50 via each of the connecting flow paths 52d. Since the gas ejected from the gas ejection port 50c is preliminarily heated, the heating of the substrate W is facilitated.

[0119] Figure 5 A schematic view for explaining the configuration of the moving gas nozzle head 12 and the sensor 13 is shown. The moving gas nozzle head 12 includes a moving gas nozzle 60 having a gas ejection port 60a that ejects gas in a substantially horizontal direction, and a nozzle support member 61 that supports the moving gas nozzle 60. To the moving gas nozzle 60, a gas pipe 62 that guides gas to the moving gas nozzle 60 is connected. To the gas pipe 62, a gas valve 63 that opens and closes the flow path in the gas pipe 62 is attached.

[0120] The gas ejected from the moving gas nozzle 60 is not limited to nitrogen. The gas ejected from the moving gas nozzle 60 can also be air. In addition, the gas ejected from the moving gas nozzle 60 can also be an inert gas other than nitrogen. The flow rate of the gas ejected from the moving gas nozzle 60 is, for example, 5 L / min or more and 30 L / min or less.

[0121] The sensor 13 is an example of an eccentricity amount measuring unit that measures the eccentricity amount E of the substrate W with respect to the rotation axis Al. The eccentricity amount E of the substrate W with respect to the rotation axis Al is the amount of shift of the central axis A2 that passes through the center portion Cl of the upper surface of the substrate W in the vertical direction with respect to the rotation axis Al.

[0122] The sensor 13 has a light emitting portion 70 that emits light, and a light receiving portion 71 that receives the light emitted from the light emitting portion 70. In the present embodiment, the light emitting portion 70 and the light receiving portion 71 are supported by the nozzle support member 61. In the present embodiment, the light emitting portion 70 and the light receiving portion 71 face each other in the vertical direction. Therefore, the optical axis formed by the light emitted from the light emitting portion 70 extends in the vertical direction.

[0123] The light-emitting part 70 has a light-emitting surface 70a extending in the horizontal direction, and the light-receiving part 71 has a light-receiving surface 71a extending parallel to the light-emitting surface 70a. The light-emitting part 70 has a light source such as an LED (Light Emitting Diode). In this embodiment, the light-receiving part 71 is a line sensor, with multiple pixels arranged in a row in the horizontal direction on the light-receiving surface 71a. In this embodiment, the light-emitting surface 70a of the light-emitting part 70 and the light-receiving surface 71a of the light-receiving part 71 face each other in the vertical direction. A strip of light is emitted from the light-emitting surface 70a of the light-emitting part 70 to the light-receiving surface 71a of the light-receiving part 71.

[0124] When the periphery of the substrate W, held by the holding surface 21a of the rotating chuck 21, is located in the space (detection space DS) between the emitting surface 70a of the emitting part 70 and the light-receiving surface 71a of the light-receiving part 71, the eccentricity E of the substrate W relative to the rotating base 21 is measured by the sensor 13. The light-receiving part 71 outputs an electrical signal representing the amount (e.g., intensity) of the received light L to the controller 3 (reference). Figure 1 ).

[0125] The nozzle support member 61 includes: a light-emitting part support 61a that supports the light-emitting part 70, a light-receiving part support 61b that supports the light-receiving part 71, and a connecting part 61c that connects the light-emitting part support 61a and the light-receiving part support 61b. Therefore, the light-emitting part support 61a, the light-receiving part support 61b, and the connecting part 61c define the space SS within the support member.

[0126] The connecting portion 61c extends in the opposing direction D1 between the light-emitting portion 70 and the light-receiving portion 71. The connecting portion 61c can be as follows: Figure 5 As shown, extending in a straight line in the opposite direction D1, it can also be... Figure 5 Unlike the substrate W, it extends in a curved manner in the opposite direction D1, protruding away from the substrate W.

[0127] The outlet 60a of the movable gas nozzle 60 is provided at the connecting part 61c. The gas ejection direction D2 of the outlet 60a of the movable gas nozzle 60 is a direction orthogonal to the opposing direction D1 (horizontal direction).

[0128] Gas ejected from the outlet 60a of the movable gas nozzle 60 is supplied to the inner space SS of the support section, filling the inner space SS. The detection space DS is a part of the inner space SS of the support section. Therefore, the gas ejected from the outlet 60a of the movable gas nozzle 60 can easily spread throughout the entire detection space DS.

[0129] Thus, the moving gas nozzle head 12 (the moving gas nozzle 60) functions as a gas supply unit that supplies gas to the detection space DS. Also, the moving gas nozzle head 12 (the moving gas nozzle 60) functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere (gas ejected from the ejection port 60a) outside the detection space DS.

[0130] The moving gas nozzle head 12 is moved in the horizontal direction by the gas nozzle moving unit 65. The moving gas nozzle head 12 is configured to move together with the light emitting portion 70 and the light receiving portion 71 in the horizontal direction between the detection position (the position shown in FIG. 1) and the retreat position (the position shown in FIG. 2). Figure 5 Figure 1 The moving gas nozzle head 12 is positioned at the detection position, and is arranged adjacent to the heater 50 in the horizontal direction.

[0131] When the moving gas nozzle head 12 is positioned at the detection position, the peripheral portion of the substrate W held by the rotary base 21 is positioned in the detection space DS. When the moving gas nozzle head 12 is positioned at the detection position, the detection space DS can be supplied with gas by ejecting gas from the ejection port 60a.

[0132] Further, when the moving gas nozzle head 12 is positioned at the detection position, the ejection port 60a faces the annular space SP1 between the peripheral portion of the lower surface of the substrate W and the facing surface 50a of the heater 50 in the horizontal direction. Thus, the moving gas nozzle head 12 can effectively supply gas into the annular space SP1. The peripheral portion of the lower surface of the substrate W is a region including the outer peripheral end (front end) of the substrate W and the portion near the outer peripheral end of the lower surface of the substrate W.

[0133] When the moving gas nozzle head 12 is positioned at the detection position, one of the light emitting portion 70 and the light receiving portion 71 is positioned above the substrate W held by the rotary base 21 (the holding position), and the other is positioned below the holding position. In the present embodiment, the light emitting portion 70 is positioned above the holding position, and the light receiving portion 71 is positioned below the holding position.

[0134] When the moving gas nozzle head 12 is positioned at the retreat position, the peripheral portion of the substrate W held by the rotary base 21 is positioned outside the detection space DS.

[0135] When the moving gas nozzle head 12 is positioned at the detection position, light emitted from the light emitting portion 70 travels in the detection space DS, a part of which is blocked by the peripheral region of the substrate W, and the other part is incident on a part of the pixels of the light receiving surface 71a. The controller 3 detects the position of the outer peripheral end of the substrate W in the detection space DS based on the pixel position of the light receiving portion 71 that receives light from the light emitting portion 70.

[0136] ​A portion of the gas nozzle 60 is inserted through a gas nozzle arm 66 that is connected to the nozzle support member 61 and extends horizontally.

[0137] The gas nozzle moving unit 65 includes a gas nozzle arm horizontal movement mechanism (not shown) that moves the gas nozzle arm 66 in the horizontal direction. The gas nozzle arm horizontal movement mechanism can also include at least one of, for example, a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The gas nozzle arm horizontal movement mechanism includes a horizontal movement actuator (not shown) such as a motor, and a horizontal movement transmission mechanism (not shown) that is connected to the gas nozzle arm 66 and transmits a driving force from the actuator to the gas nozzle arm 66 to move the gas nozzle arm 66 horizontally. The horizontal movement transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

[0138] Figure 6 is a cross-sectional view of the periphery of the centering unit 14. The centering unit 14 is configured to move the substrate W on the holding surface 21a of the rotary base 21 relative to the rotary base 21 so that the center axis A2 of the substrate W approaches the rotary axis Al. The centering unit 14 is disposed on the side of the rotary axis Al farther than the heating unit 11.

[0139] The centering unit 14 includes a plurality of lift pins 80 (also refer to Figure 3 ) as a plurality of (three in this embodiment) elevators configured in a manner to lift the substrate W held on the holding surface 21a or place the lifted substrate W on the holding surface 21a, and a pin horizontal movement mechanism 90 that moves the plurality of lift pins 80 horizontally to bring the center portion Cl of the substrate W closer to the rotary axis Al. The pin horizontal movement mechanism 90 is an example of an elevator horizontal movement mechanism.

[0140] The plurality of lift pins 80 are disposed at equal intervals in the rotation direction around the rotary axis Al. The pin horizontal movement mechanism 90 moves the plurality of lift pins 80 integrally in the horizontal direction relative to the rotary base 21. The plurality of lift pins 80 are connected by a circular ring-shaped connecting member 81.

[0141] The centering unit 14 also includes a pin vertical movement mechanism 85 that moves the plurality of lift pins 80 integrally in the vertical direction. The pin vertical movement mechanism 85 is an example of an elevator vertical movement mechanism.

[0142] The lift pin 80 has a front end portion 80a as an opposing portion that opposes the substrate W from below the substrate W held on the holding surface 21a. The plurality of lift pins 80 are moved by the pin vertical movement mechanism 85 between a first position (position shown by a double-dot chain line in Figure 6 ), and a second position (position shown by a single-dot chain line in Figure 6The front end portion 80a of the lift pin 80 is positioned above the substrate W held on the holding surface 21a when the lift pin 80 is in the first position. The front end portion 80a of the lift pin 80 is positioned below the substrate W held on the holding surface 21a when the lift pin 80 is in the second position.

[0143] The configuration of the pin vertical movement mechanism 85 is not particularly limited, but includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.

[0144] The pin vertical movement mechanism 85 includes a fixed body 86, a movable body 87, and a drive mechanism 88. The movable body 87 is configured to be movable in the vertical direction with respect to the fixed body 86. The drive mechanism 88 acts a driving force on the movable body 87 to move the movable body 87 in the vertical direction with respect to the fixed body 86.

[0145] The drive mechanism 88 includes, for example, a motor. For example, the movable body 87 is coupled to the rotor of the motor via a link member or the like that is displaced by the motor, thereby moving the movable body 87 in the vertical direction with respect to the fixed body 86. By moving the movable body 87 in the vertical direction with respect to the fixed body 86 by the drive mechanism 88, the link member 81 and the plurality of lift pins 80 are integrally moved in the vertical direction.

[0146] In a state where the substrate W is placed on the holding surface 21a of the rotary base 21, the plurality of lift pins 80 is moved from the second position toward the first position, thereby lifting the substrate W by the plurality of lift pins 80. In detail, the substrate W is transferred from the rotary base 21 to the plurality of lift pins 80 halfway through the movement to the first position, and the substrate W is moved upward away from the rotary base 21.

[0147] The configuration of the pin horizontal movement mechanism 90 is not particularly limited, but includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.

[0148] The pin horizontal movement mechanism 90 includes a fixed body 91, a movable body 92, and a drive mechanism 93. The movable body 92 is configured to be movable in the horizontal direction with respect to the fixed body 91. The moving direction of the movable body 92 is the horizontal direction that is parallel to the vertical plane that passes through the rotation axis Al, that is, the reference plane PI (refer to FIG. 1). Figure 3 The moving direction of the movable body 92 is the same direction as the moving direction of the substrate W in the alignment step described later, that is, the centering direction.

[0149] The driving mechanism 93 acts a driving force on the movable body 92 using to move the movable body 92 relative to the fixed body 91. For example, the driving mechanism 93 is a linear motor mechanism. In this case, the linear motor mechanism includes a coil installed in a stator and a permanent magnet installed in a rotor, and moves the rotor relative to the stator in a horizontal direction by a magnetic action thereof. The fixed body 91 is linked to the stator of the linear motor, and the movable body 92 is linked to the rotor of the linear motor. The driving mechanism 93 is an example of a centering actuator that moves the substrate W relative to the rotary base 21 by moving the plurality of lift pins 80 in a horizontal direction.

[0150] The movable body 92 of the pin horizontal movement mechanism 90 is linked to the fixed body 86 of the pin vertical movement mechanism 85. Therefore, by moving the movable body 92 of the pin horizontal movement mechanism 90 in a horizontal direction, the pin vertical movement mechanism 85, the linking member 81, and the plurality of lift pins 80 are moved integrally in a horizontal direction.

[0151] By moving the plurality of lift pins 80 from the second position to the first position by the pin vertical movement mechanism 85, the plurality of lift pins 80 lift and support the substrate W from the rotary base 21. The pin horizontal movement mechanism 90 can move the plurality of lift pins 80 supporting the substrate W in a horizontal direction, and adjust the position of the substrate W relative to the rotary base 21. In detail, by bringing the center axis A2 of the substrate W close to the rotation axis Al, the eccentricity E can be reduced. After adjusting the position of the substrate W relative to the rotary base 21, by moving the plurality of lift pins 80 from the first position to the second position by the pin vertical movement mechanism 85, the substrate W can be held to the holding surface 21a of the rotary base 21.

[0152] The centering unit 14 can also include a position measuring sensor 94 such as an encoder that detects the position of the movable body 92 of the pin horizontal movement mechanism 90 in a horizontal direction.

[0153] The centering unit 14 includes a ring-shaped housing member 95 that houses the pin vertical movement mechanism 85 and the pin horizontal movement mechanism 90. A plurality of through holes 95a are formed in the housing member 95, and the plurality of lift pins 80 protrude from each of the plurality of through holes 95a toward the lower surface of the substrate W. The centering unit 14 includes a sealing member 96 provided between the periphery of each through hole 95a and the corresponding lift pin 80.

[0154] Figure 7 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 has a microcomputer, and controls the control objects provided in the substrate processing apparatus 1 in accordance with a specific control program.

[0155] Specifically, the controller 3 may also be a computer that includes a processor (CPU (Central Processing Unit)) 4 and a memory 5 storing control programs. The controller 3 is configured to perform various controls for processing the substrate by causing the processor 4 to execute the control programs.

[0156] In particular, the following programming is used: Controller 3 controls the conveying robot IR, CR, rotary motor 23, peripheral nozzle moving unit 44, gas nozzle moving unit 65, protective lifting unit 37, power supply unit 57, sensor 13, centering unit 14, suction valve 28, multiple processing fluid valves 43, gas valve 63 and lower processing fluid valve 73.

[0157] The controller 3 receives an electrical signal indicating the position of the movable body 92 detected by the position measuring sensor 94 of the centering unit 14. The controller 3 also receives an electrical signal output from the light receiving unit 71.

[0158] Figure 8 This is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus. Figure 8 This mainly refers to the processing implemented by the program executed by controller 3.

[0159] First, the untreated substrate W is transported by a robotic arm (IR, CR) (reference). Figure 1 The substrate W is transferred from carrier C to processing unit 2 and handed over to rotating chuck 6 (step S1). Specifically, the substrate W is placed on holding surface 21a. The substrate W is held horizontally by opening suction valve 28 while the substrate W is placed on holding surface 21a (substrate holding step). Before placing the substrate W on holding surface 21a, flow path on / off valve 59 is opened and energization unit 57 is started to energize heater 50.

[0160] Although details are described below, after the substrate W is placed on the holding surface 21a, a substrate position adjustment process (step S2) is performed to align the substrate W. The substrate position adjustment process is also called the centering process (centering step).

[0161] After the substrate positioning process is completed, a specific liquid treatment is performed. In the substrate treatment apparatus 1, for example, while heating the periphery of the substrate W with the heating unit 11, a treatment liquid is supplied to the periphery of the upper surface of the substrate W from the peripheral nozzle head 9. APM, carbonated water, HF, and carbonated water are sequentially supplied to the periphery of the upper surface of the substrate W. After the supply of the treatment liquid is completed, the substrate W is rotated at high speed to dry the periphery of the upper surface of the substrate W.

[0162] More specifically, by moving the peripheral nozzle head 9 to the processing position, the corresponding processing fluid valve 43 is opened, and a liquid such as APM is supplied from the first peripheral liquid nozzle 40A to the peripheral portion of the upper surface of the substrate W (first liquid processing: Step S3).

[0163] After that, the processing fluid valve 43 corresponding to the first peripheral liquid nozzle 40A is closed, and the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is opened instead. Thus, a cleaning liquid such as carbonated water is supplied from the peripheral cleaning liquid nozzle 40C to the peripheral portion of the upper surface of the substrate W (first cleaning processing: Step S4).

[0164] Further, after that, the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is closed, and the processing fluid valve 43 corresponding to the second peripheral liquid nozzle 40B is opened. Thus, a liquid such as fluoric acid is supplied from the second peripheral liquid nozzle 40B to the peripheral portion of the upper surface of the substrate W (second liquid processing: Step S5). After that, the processing fluid valve 43 corresponding to the second peripheral liquid nozzle 40B is closed, and the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is opened. Thus, a cleaning liquid such as carbonated water is supplied from the peripheral cleaning liquid nozzle 40C to the peripheral portion of the upper surface of the substrate W (second cleaning processing: Step S6).

[0165] After the second cleaning processing, the processing fluid valve 43 is closed, and the rotation motor 23 accelerates the rotation of the substrate W, and the substrate W is rotated at a high rotation speed (for example, several thousands rpm) (rotation drying: Step S7). Thus, the liquid is removed from the substrate W, and the substrate W is dried. When a certain time elapses after the start of the high-speed rotation of the substrate W, the rotation motor 23 stops the rotation. Thus, the rotation of the substrate W is stopped.

[0166] After the liquid processing of the substrate W is completed, the transfer robot CR enters the processing unit 2, takes out the processed substrate W from the rotary chuck 6, and carries it out to the outside of the processing unit 2 (Step S8). The substrate W is handed over from the transfer robot CR to the transfer robot IR, and is housed in the carrier C by the transfer robot IR.

[0167] During the liquid processing, the substrate W is heated by the radiation heat and the heating gas supplied from the heater 50. Therefore, the processing rate of the liquid such as APM or HF to the peripheral portion of the upper surface of the substrate W is improved. The TiN or SiO2 present in the peripheral portion of the upper surface of the substrate W is etched by the liquid such as APM or HF. By supplying the heating gas to the annular space SP1 between the heater 50 and the lower surface of the substrate W, the processing liquid that has returned to the peripheral portion of the upper surface of the substrate W can be prevented from winding around the lower surface of the substrate.

[0168] Figure 9 is a flowchart for explaining the adjustment of the position of the substrate during the processing of the substrate (Step S2). Figures 10A-10Cis a schematic view of a state of a substrate for explaining one example of a substrate position adjustment process.

[0169] In the substrate position adjustment process (step S2), the gas nozzle moving unit 65 moves the moving gas nozzle head 12 to a detection position (step S10).

[0170] The gas valve 63 is opened, and the supply of gas from the moving gas nozzle 60 to the detection space DS is started (gas supply step). As a result, as shown in Figure 5 the gas supplied from the moving gas nozzle 60 is started (step Sll). That is, in a state in which the peripheral edge portion of the substrate W is positioned in the detection space DS, the atmosphere replacement step in which the atmosphere existing in the detection space DS is replaced by the gas ejected from the moving gas nozzle 60 is started.

[0171] After the start of the atmosphere replacement step, the eccentricity E of the substrate W is measured by the sensor 13 (step S12). That is, during the execution of the atmosphere replacement step, the eccentricity measurement step in which the eccentricity E is measured by the sensor 13 while the substrate W is rotated is executed.

[0172] After the eccentricity E is measured by the sensor 13, the controller 3 determines whether the eccentricity E is within a certain threshold value (step S13: eccentricity determination step). The certain threshold value is, for example, 0.08 mm. In a case in which the eccentricity E is not within the threshold value (step S13: No), before the alignment of the substrate W is performed, the position confirmation step in which it is confirmed whether the substrate W is positioned at a reference position at which the substrate W is arranged is performed (step S14).

[0173] In the position confirmation step, specifically, the controller 3 confirms whether the substrate W is positioned at the reference position on the basis of the detection value of the light receiving portion 71. The reference position is a rotation phase in which the central axis A2 of the substrate W coincides with the reference surface PI and the central axis A2 of the substrate W is aligned with the rotation axis Al in the moving direction (centering direction) of the lift pins 80. Figure 10A a state in which the central axis A2 of the substrate W does not coincide with the reference surface PI is indicated.

[0174] In a case in which the substrate W is positioned at the reference position (step S14: Yes), the rotation motor 23 does not rotate the substrate W and the rotation base 21 but makes them stationary at the position. In a case in which the substrate W is not positioned at the reference position (step S14: No), the rotation motor 23 rotates the substrate W and the rotation base 21 to the reference position and makes them stationary at the reference position (step S15). For example, in a case in which the substrate W is in the state shown in Figure 10B the substrate W and the rotation base 21 are rotated clockwise by 90°. As a result, as shown in Figure 10BAs shown, the center C1 of the substrate W coincides with the reference plane P1, and the substrate W is positioned at the reference position.

[0175] With the substrate W positioned at the reference position, the centering unit 14 aligns the substrate W (alignment step: step S16). Specifically, the centering unit 14 moves the substrate W horizontally relative to the rotating base 21 in the centering direction, based on the eccentricity E measured by the sensor 13, such that the central axis A2 of the substrate W is close to the rotation axis A1.

[0176] Specifically, this involves moving multiple lifting pins 80 to position 1 (see reference). Figure 6 The position of the lifting pin 80 (indicated by the double-dotted line) is such that the substrate W on the rotating base 21 is lifted by multiple lifting pins 80. Then, as... Figure 10B As shown, by moving multiple lifting pins 80 in the centering direction, the eccentricity E of the substrate W is reduced. Then, the multiple lifting pins 80 are lowered to the second position (reference). Figure 6 (The position of the lifting pin 80 is shown in solid line). By lowering the multiple lifting pins 80, the substrate W is placed on the holding surface 21a of the rotating base 21.

[0177] By utilizing an alignment step, the central axis A2 of the substrate W is brought sufficiently close to the rotation axis A1 of the rotating base 21, and so on. Figure 10C As shown, the eccentricity of substrate W is eliminated. Eliminating the eccentricity of substrate W does not mean that the rotation axis A1 is completely aligned with the central axis A2 of substrate W, but rather that the eccentricity E is below a certain threshold (e.g., 0.08 mm).

[0178] Next, by opening the suction valve 28, the substrate W is adsorbed onto the rotating base 21 (adsorption step: step S17). Then, by closing the gas valve 63, the atmosphere replacement in the detection space DS is completed (step S18). That is, the atmosphere replacement step is complete. Furthermore, the gas nozzle moving unit 65 moves the moving gas nozzle head 12 to the retracted position (step S19). Based on the above, the substrate position adjustment process (step S2) is completed.

[0179] In step S13, if the eccentricity E is within the threshold (step S13: no), the alignment step is not performed, and the steps after step S17 are performed instead.

[0180] Next, the untreated substrate W is moved into the processing unit 2, where substrate position adjustment and substrate processing are performed. From the viewpoint of the heating efficiency of the heater 50, after the substrate processing is completed, until the substrate position adjustment of the next substrate W begins, the power supply to the power supply unit 57 of the heater 50 of the heating unit 11 and the gas supply continue.

[0181] Next, the effect of the atmosphere in the displacement detection space DS will be explained.

[0182] During the substrate positioning process, the substrate W is placed on the holding surface 21a, and the periphery of the substrate W is heated by the heating unit 11. As a result, atmosphere fluctuations are generated in the space near the periphery of the substrate W. Specifically, the relatively high-temperature atmosphere in contact with the periphery of the substrate mixes with the surrounding atmosphere, thus disturbing the atmosphere. Because the atmosphere is disturbed, the refractive index of the space near the periphery of the substrate W becomes uneven.

[0183] If the moving gas nozzle head 12 is positioned at the detection position, the detection space DS between the light-emitting part 70 and the light-receiving part 71 of the sensor 13 is located near the periphery of the substrate W. Therefore, atmospheric fluctuations also occur in the detection space DS.

[0184] Figure 11 It is a graph used to illustrate the difference in the measured value of eccentricity E before and after atmosphere replacement in the detection space DS. Figure 11 In the diagram, the horizontal axis represents the rotation phase of substrate W, and the vertical axis represents the displacement of the outer periphery of substrate W.

[0185] The rotation phase refers to the amount of rotation relative to the reference position when the angle of the reference position in the rotation direction of the substrate W is set to 0°. The displacement of the outer peripheral end of the substrate W is the displacement of the substrate W in a direction orthogonal to the opposing directions of the light-emitting part 70 and the light-receiving part 71, and is the distance between the outer peripheral end of the substrate W at a specific reference position and the outer peripheral end of the substrate W at each rotation phase. The reference position is the position where the central axis A2 of the substrate W coincides with the rotation axis A1 of the rotating base 21.

[0186] The eccentricity E of substrate W relative to the rotation axis A1 is half of the sum of the absolute value of the maximum displacement of the outer peripheral end of substrate W and the absolute value of the minimum displacement of the outer peripheral end of substrate W (total displacement DA) (E = DA / 2).

[0187] Assuming a different substrate treatment than described above, without atmospheric displacement within the detection space DS, the eccentricity E is measured under atmospheric fluctuation conditions within the detection space DS. Therefore, as... Figure 11 As shown by the dashed line, the displacement at the outer periphery of substrate W generates noise. Therefore, the measurement accuracy of the eccentricity E is insufficient.

[0188] On the other hand, in the substrate processing, since the atmosphere present in the detection space DS is replaced by gas supplied from the moving gas nozzle 60, atmospheric fluctuations in the detection space DS are eliminated. Therefore, as Figure 11 As shown by the solid line, the noise of the displacement at the outer periphery of substrate W is reduced. Therefore, the eccentricity E of substrate W can be measured with good accuracy.

[0189] According to the first embodiment, the atmosphere in the detection space DS is replaced by the gas (atmosphere outside the detection space DS) ejected from the moving gas nozzle 60. Therefore, when the peripheral portion of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13 can be improved, so that the eccentricity E of the substrate W can be favorably reduced.

[0190] The moving gas nozzle 60 ejects gas toward the annular space SP1 between the peripheral portion of the substrate W held on the holding surface 21a and the heater 50. The atmosphere existing in the annular space SP1 is easily heated by the heater 50, and a temperature difference from the atmosphere outside the annular space SP1 is easily generated. Therefore, the atmosphere existing in the annular space SP1 is particularly easily fluctuated. Therefore, if the moving gas nozzle 60 is configured to eject gas toward the annular space SP1, the atmosphere in the annular space SP1 can be effectively replaced. Therefore, the fluctuation of the atmosphere in the annular space SP1 can be eliminated.

[0191] <Second Embodiment>

[0192] Figure 12 is a schematic view for explaining a configuration example of the processing unit 2 provided in the substrate processing apparatus 1P of the second embodiment. Figure 13 is a schematic plan view of the processing unit 2 of the second embodiment. Figure 13 In Fig. 10, the peripheral nozzle head 9 and the gas nozzle moving unit 65 are omitted for convenience.

[0193] Figure 12 and Figure 13 and Figs. 14 to 16 to be described later Figure 18B In Fig. 10, the peripheral nozzle head 9 and the gas nozzle moving unit 65 are omitted for convenience. Figures 1-11 The same reference numerals are attached to the same components as those shown in Figs. 1 to 9, and the description thereof is omitted. Figure 1 The same reference numerals are attached to the same components as those shown in Figs. 1 to 9, and the description thereof is omitted.

[0194] The substrate processing apparatus 1P mainly differs from the substrate processing apparatus 1 of the first embodiment in that a plurality of fixed gas nozzles 15 and a mounting plate 16 are provided instead of the moving gas nozzle head 12, the position of the sensor 13P is fixed, and the centering unit 14P is mounted to the shield 30.

[0195] One of the light emitting portion 70 and the light receiving portion 71 of the sensor 13P is disposed above the holding position, and the other of the light emitting portion 70 and the light receiving portion 71 is disposed below the holding position. In the second embodiment, the facing direction D1 of the light emitting portion 70 and the light receiving portion 71 coincides with the vertical direction. Figure 13 In the example shown in Fig. 10, the light emitting portion 70 is disposed below the holding position, and the light receiving portion 71 is disposed above the holding position.

[0196] The light emitting section 70 is disposed in the motor housing 24 of the rotary chuck 6. The light emitting section 70 is disposed below a through hole that penetrates the motor housing 24 in the up-down direction. The through hole of the motor housing 24 is covered by a transparent member that transmits the light L from the light emitting section 70. The light L emitted from the light emitting section 70 is emitted outside the motor housing 24 through the transparent member.

[0197] The light receiving section 71 is disposed in the sensor housing 100 that is disposed inside the chamber 8. The light receiving section 71 is disposed above a through hole that penetrates the sensor housing 100 in the up-down direction. The through hole of the sensor housing 100 is closed by a transparent member that transmits the light L from the light emitting section 70. The light L emitted from the light emitting section 70 enters the sensor housing 100 through the transparent member and is irradiated to the light receiving section 71. In the present embodiment, the light emitting surface 70a of the light emitting section 70 and the light receiving surface 71a of the light receiving section 71 face each other in the vertical direction.

[0198] In this way, the light emitting section 70 and the light receiving section 71 are fixed to members (the motor housing 24 and the sensor housing 100) whose positions inside the chamber 8 are fixed. Therefore, by holding the substrate W at the holding surface 21a, the peripheral edge portion of the substrate W is disposed in the detection space DS.

[0199] In the case where no substrate W is present on the rotary base 21, the light L emitted from the light emitting section 70 passes through the annular space SP2 formed between the inner peripheral surface of the upper end portion of the shield 30 and the outer peripheral surface of the heater 50 in the vertical direction without being blocked by the shield 30 and the heater 50, and reaches the light receiving section 71. In the case where a substrate W is present on the rotary base 21, a portion of the light L emitted from the light emitting section 70 is blocked by the peripheral edge portion of the substrate W. Therefore, the controller 3 detects the position of the peripheral edge of the substrate W inside the detection space DS based on the positions of the pixels of the light receiving section 71 that receive the light L from the light emitting section 70.

[0200] The mounting plate 16 is mounted to and fixed to the side wall 8A of the chamber 8.

[0201] The plurality of fixed gas nozzles 15 are collectively mounted to the single mounting plate 16. The plurality of fixed gas nozzles 15 are arranged in the direction D1 in which the light emitting section 70 and the light receiving section 71 face each other above the position at which the substrate W is held.

[0202] In each fixed gas nozzle 15, a gas pipe 110 that guides a gas such as nitrogen gas to the fixed gas nozzle 15 is connected. In each gas pipe 110, a gas valve 111 that opens and closes the flow path inside the corresponding gas pipe 110 is interposed. Each of the plurality of fixed gas nozzles 15 has a plurality of gas ejection ports 15a. The plurality of gas ejection ports 15a are arranged in the direction D1 in which the light emitting section 70 and the light receiving section 71 face each other.

[0203] The plurality of fixed gas nozzles 15 include: the first fixed gas nozzles 15A that supply gas to a portion near the peripheral edge portion of the substrate W in the detection space DS, and the second fixed gas nozzles 15B that supply gas to a space locally around the peripheral edge portion of the substrate W in the detection space DS. The second fixed gas nozzles 15B can also be provided in multiple numbers (2 in the example). Figure 12

[0204] The plurality of fixed gas nozzles 15 are an example of a gas supply unit that supplies gas to the detection space DS. Also, the fixed gas nozzles 15 function as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere of the gas ejected from the gas ejection ports 15a outside the detection space DS.

[0205] Figure 14A is a schematic view of the plurality of fixed gas nozzles 15 as viewed from the horizontal direction. Figure 14B is a perspective view of the periphery of the plurality of fixed gas nozzles 15. Figure 14C is a plan view of the plurality of fixed gas nozzles 15.

[0206] As shown in Figure 14A , the ejection direction D3 of the gas of the gas ejection port 15a of the second fixed gas nozzle 15B is a direction orthogonal to the direction of opposition Dl. The ejection direction D4 of the gas of the gas ejection port 15a of the first fixed gas nozzle 15A is a direction inclined with respect to the horizontal plane HS. In the present embodiment, since the direction of opposition Dl is the vertical direction, the direction orthogonal to the direction of opposition Dl is the horizontal direction. The angle θ that a straight line SL extending in the ejection direction D4 makes with the horizontal plane HS is, for example, 18°.

[0207] Since the first fixed gas nozzle 15A is disposed above the holding position of the substrate W, the ejection direction D4 is inclined with respect to the horizontal plane HS in such a manner as to be directed downward as it goes from the gas ejection port 15a of the first fixed gas nozzle 15A toward the detection space DS. In detail, the ejection direction D4 of the gas of the gas ejection port 15a of the first fixed gas nozzle 15A is a direction toward the annular space SP1 between the peripheral edge portion of the lower surface of the substrate W and the facing surface 50a of the heater 50. Therefore, the first fixed gas nozzle 15A can effectively supply gas to the annular space SP1.

[0208] As shown in Figure 14B , each fixed gas nozzle 15 includes: a mounting portion 115 that extends along the mounting plate 16 and is mounted to the mounting plate 16, and an ejection portion 116 that is formed integrally with the mounting portion 115 and in which the gas ejection port 15a is provided.

[0209] In the mounting portion 115, a penetration hole 115a through which a fastening member 118 such as a screw is inserted is provided (see also Figure 14C ​). The fixed gas nozzles 15 are collectively installed on the mounting plate 16 by fastening members 118.

[0210] As shown in Figure 13 , the ejection portion 116 extends in a direction inclined from the mounting portion 115 to a direction extending from the mounting portion 115 (a direction along the side wall 8A) in plan view. The ejection portion 116 and the mounting portion 115 extend horizontally in a non-orthogonal manner in plan view.

[0211] The gas ejection port 15a is provided at a front end portion of the ejection portion 116. The ejection portion 116 extends toward the rotation axis Al, and the sensor 13P (refer to Figure 13 ) is disposed between the ejection portion 116 and the rotation axis Al. Thus, gas ejected from the ejection portion 116 is fed to the detection space DS of the sensor 13P.

[0212] The ejection portion 116 of the first fixed gas nozzle 15A has a flat surface 116a that forms the gas ejection port 15a and is inclined with respect to the facing direction Dl. The ejection portion 116 of the second fixed gas nozzle 15B has a flat surface 116b that forms the gas ejection port 15a and is along the facing direction Dl.

[0213] As shown in Figure 14C , the gas pipe 110 is connected to the ejection portion 116 of each fixed gas nozzle 15. Specifically, an internal flow path 117, one end of which is connected to the inside of the gas ejection port 15a, is formed inside the ejection portion 116, and a flow path inside the gas pipe 110 is connected to the other end of the internal flow path 117.

[0214] Figure 15 is a sectional view of the periphery of the centering unit 14P of the second embodiment.

[0215] The centering unit 14P includes two elevators 120 configured to lift the substrate W held on the holding surface 21a or place the lifted substrate W on the holding surface 21a, and an elevator horizontal movement mechanism 90P configured to bring the center portion Cl of the substrate W close to the rotation axis Al by horizontally moving the two elevators 120.

[0216] Each elevator 120 faces the peripheral portion of the substrate W on the rotation base 21 in the horizontal direction. The elevator horizontal movement mechanism 90P includes a first elevator horizontal movement mechanism 122 configured to individually horizontally move the elevators in the centering direction, and a second elevator horizontal movement mechanism 123 configured to integrally horizontally move the two elevators 120 in the centering direction.

[0217] The two elevators 120 include: a first elevator 120A; and a second elevator 120B, which faces the periphery of the substrate W on the rotating base 21 from the opposite side to the first elevator 120A in the horizontal direction. Each elevator 120 has the same configuration.

[0218] Two elevators 120 are respectively positioned at two locations with an angle difference of 180° around the rotation axis A1. Each elevator 120 has a horizontally opposing surface 127 in the centering direction. The opposing surface 127 of the first elevator 120A is referred to as the first opposing surface 127A, and the opposing surface 127 of the second elevator 120B is referred to as the second opposing surface 127B. The first opposing surface 127A and the second opposing surface 127B are inclined relative to the horizontal direction, moving away from each other as they face upwards.

[0219] Each elevator 120, via the first elevator horizontal moving mechanism 122, is in the lifting position ( Figure 15 The position indicated by the double-dotted line) and the retreat position ( Figure 15 The elevator moves between the positions indicated by the solid lines in the center. The lifting position is when the front end (end in the centering direction) of the opposing surface 127 of the elevator 120 is located closer to the rotation axis A1 than the outer peripheral end of the substrate W on the holding surface 21a of the rotating base 21. The retracting position is when the opposing surface 127 of the elevator 120 is away from the outer peripheral end of the substrate W on the holding surface 21a of the rotating base 21.

[0220] Since the first opposing surface 127A and the second opposing surface 127B are inclined relative to the horizontal direction as they move away from each other as they move upward, the substrate W on the rotating base 21 is lifted by the first elevator 120A and the second elevator 120B as they move toward the lifting position.

[0221] In detail, after the first opposing surface 127A and the second opposing surface 127B contact the outer peripheral end of the substrate W, the first elevator 120A and the second elevator 120B move closer to each other, lifting the substrate W from the rotating base 21. Furthermore, the first elevator 120A and the second elevator 120B reach a lifting position that raises the substrate W from the rotating base 21 to a specific height.

[0222] During the process of moving the first elevator 120A and the second elevator 120B from the lifting position to the retracted position, the substrate W is placed on the holding surface 21a of the rotating base 21.

[0223] The first elevator horizontal movement mechanism 122 includes two cylinders 125. The two cylinders 125 are arranged at two positions that are 180° apart in the angle around the rotation axis Al, respectively. The two cylinders 125 are arranged at the same height. The two cylinders 125 are horizontally opposite. The rotation base 21 is arranged between the two cylinders 125 when viewed from above.

[0224] The cylinder 125 includes a cylinder body 125a having an internal space, a piston that divides the internal space of the cylinder body 125a into two chambers that are apart in the axial direction of the cylinder 125, and a rod 125b that protrudes from the end surface of the cylinder body 125a toward the axial direction of the cylinder 125 and moves together with the piston toward the axial direction of the cylinder 125. The elevator 120 is attached to the rod 125b. The two cylinders 125 are an example of an elevator actuator.

[0225] The elevator 120 moves together with the rod 125b toward the axial direction of the cylinder 125 with respect to the cylinder body 125a. The axial direction of the cylinder 125 coincides with the centering direction.

[0226] The second elevator horizontal movement mechanism 123 includes a sliding bracket 140 that supports the two cylinders 125, a linear motor 141 that moves the sliding bracket 140 in the centering direction, and a linear guide 142 that guides the sliding bracket 140 in the centering direction. The linear motor 141 is an example of a centering actuator that horizontally moves the substrate W with respect to the rotation base 21 by horizontally moving the two elevators 120.

[0227] The sliding bracket 140 includes a floor 140a arranged below each of the two cylinders 125 and one or more joint arms 140b that link the two floors 140a. The linear guide 142 is provided between each of the two main bases 143 that support the two floors 140a and the corresponding floor 140a.

[0228] By moving the sliding bracket 140 horizontally, the two cylinders 125 supported by the sliding bracket 140 and the two elevators 120 supported by the two cylinders 125 move horizontally in the same direction, at the same speed, and by the same amount as the sliding bracket 140.

[0229] The centering unit 14P includes a unit housing 145 that accommodates the two cylinders 125 and the floor 140a (see FIG. 6). Figure 13 The linear motor 141 and the linear guide 142 are accommodated in the two unit housings 145, respectively. The elevators 120 are arranged outside the unit housing 145.

[0230] The unit housing 145 is placed from above on the first extension portion 36A of the first shield 30A, and is supported by the first extension portion 36A. Therefore, the centering unit 14 is raised and lowered together with the first shield 30A. Therefore, when the centering unit 14 is operated, the first shield 30A needs to be disposed at a substrate position adjustment position at which the facing surfaces 127 of the two elevators 120 face the peripheral portion of the substrate W from the horizontal direction. The substrate position adjustment position is a position between the upper position and the lower position. The shield raising and lowering unit 37 (first shield raising and lowering unit) is an example of an elevator vertical movement mechanism that raises and lowers the two elevators 120.

[0231] The substrate W on the rotary base 21 is lifted by the two elevators 120 and is moved away from the holding surface 21a of the rotary base 21 in the process of being moved to a specific raised position in such a manner that the two elevators 120 are moved closer to each other.

[0232] In the state in which the two elevators 120 horizontally support the substrate W, if the linear motor 141 moves the sliding bracket 140 in the centering direction, the substrate W supported by the two elevators 120 is horizontally moved in the same direction, at the same speed, and by the same amount as the sliding bracket 140. Thus, the center axis A2 of the substrate W is moved with respect to the rotation axis Al. Therefore, by adjusting the amount of movement of the sliding bracket 140, it is possible to move the center axis A2 of the substrate W closer to the rotation axis Al.

[0233] The same substrate processing as the substrate processing apparatus 1 of the first embodiment can be performed by the substrate processing apparatus IP. Specifically, the substrate processing apparatus IP can perform the substrate processing of Figure 8 .

[0234] However, the operations of the components of the substrate position adjustment processing (step S2) are slightly different. Specifically, in the substrate processing apparatus IP, since the fixed gas nozzle 15 is provided instead of the moving gas nozzle 60, as shown in Figure 16 , the steps related to the movement of the nozzle are omitted.

[0235] Figure 16 is a flowchart for explaining the substrate position adjustment (step S2) in the substrate processing. Specifically, since the position of the sensor 13P in the chamber 8 is fixed, the steps related to the movement of the sensor are omitted.

[0236] More specifically, as follows. After the substrate W is placed on the holding surface 21a of the rotary base 21, the plurality of gas valves 111 are opened.

[0237] By placing the substrate W on the holding surface 21a, the peripheral portion of the substrate W is positioned in the detection space DS. By opening the plurality of gas valves 111, as described Figure 14AAs shown, the supply of the gas from the plurality of fixed gas nozzles 15 to the detection space DS is started (gas supply step).

[0238] The atmosphere existing in the detection space DS is replaced by the gas supplied from the fixed gas nozzles 15 (step Sll). That is, in a state where the peripheral edge portion of the substrate W is located in the detection space DS, the atmosphere replacement step of replacing the atmosphere existing in the detection space DS by the gas emitted from the plurality of fixed gas nozzles 15 is started.

[0239] After the start of the atmosphere replacement step, the eccentricity amount of the substrate W is measured by the sensor 13P (step S12). That is, during the execution of the atmosphere replacement step, the eccentricity measurement step of measuring the eccentricity amount E while rotating the substrate W is executed.

[0240] After the measurement of the eccentricity amount E by the sensor 13P, the controller 3 determines whether the eccentricity amount E is within a certain threshold value (step S13: eccentricity determination step). The certain threshold value is, for example, 0.08 mm. In a case where the eccentricity amount E is not within the threshold value (step S13: No), before the alignment of the substrate W is performed, the position confirmation step of confirming whether the substrate W is located at a reference position where the substrate W is arranged (step S14) is performed.

[0241] Specifically, the controller 3 confirms whether the substrate W is located at the reference position based on the detection value of the light receiving portion 71. The reference position is a rotation phase where the center axis A2 of the substrate W coincides with the reference surface PI and the center axis A2 of the substrate W and the rotation axis Al are aligned in the moving direction (centering direction) of the elevator 120.

[0242] In a case where the substrate W is located at the reference position (step S14: Yes), the rotation motor 23 does not rotate the substrate W and the rotation base 21 but makes them stationary at the position. In a case where the substrate W is not located at the reference position (step S14: No), the rotation motor 23 rotates the substrate W and the rotation base 21 to the reference position and makes them stationary at the reference position (step S15). Thus, as shown, the center axis A2 of the substrate W coincides with the reference surface PI and the substrate W is arranged at the reference position. Figure 17A

[0243] In a state where the substrate W is arranged at the reference position, the alignment of the substrate W is performed by the centering unit 14 (alignment step: step S16). Specifically, the centering unit 14P moves the substrate W in the centering direction horizontally with respect to the rotation base 21 in such a manner that the center axis A2 of the substrate W approaches the rotation axis Al based on the eccentricity amount E measured by the sensor 13P.

[0244] Specifically, as shown in Figure 17B ​As shown, the substrate W on the rotary base 21 is lifted by the first and second elevators 120A and 120B being moved to the raised position. Thereafter, as shown, the substrate W is moved to the detection space DS by the first and second elevators 120A and 120B being moved to the retracted position. Figure 17C As shown, the eccentricity E of the substrate W is reduced by the first and second elevators 120A and 120B being moved in the centering direction as one. Thereafter, the substrate W is placed on the holding surface 21a of the rotary base 21 by the first and second elevators 120A and 120B being moved horizontally to the retracted position.

[0245] By the alignment step, the center axis A2 of the substrate W is sufficiently close to the rotation axis Al of the rotary base 21, and the eccentricity of the substrate W is eliminated.

[0246] Thereafter, the substrate W is adsorbed to the rotary base 21 by the suction valve 28 being opened (suction step: step S17). Thereafter, the atmosphere replacement in the detection space DS is detected by the gas valve 63 being closed (step S18). That is, the atmosphere replacement step is ended. According to the above, the substrate position adjustment processing (step S2) is ended.

[0247] According to the second embodiment, the atmosphere in the detection space DS is replaced by the gas (atmosphere outside the detection space DS) ejected from the fixed gas nozzle 15. Therefore, when the peripheral portion of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, and thus the eccentricity E of the substrate W can be reduced favorably.

[0248] As described above, the atmosphere in the annular space SP1 is particularly likely to fluctuate. The first fixed gas nozzle 15A ejects gas to the annular space SP1 between the peripheral portion of the substrate W held on the holding surface 21a and the heater 50. Therefore, the atmosphere in the annular space SP1 can be replaced effectively. Thus, the fluctuation of the atmosphere in the detection space SP1 can be eliminated.

[0249] According to the second embodiment, the plurality of fixed gas nozzles 15 as the gas supply unit includes a plurality of gas ejection ports 15a arranged in the direction D1 opposite to the light emitting portion 70 and the light receiving portion 71. Therefore, by the gas ejected from the plurality of gas ejection ports 15a arranged in the direction D1, not only the partial atmosphere near the peripheral portion of the substrate W but also the atmosphere in the entire detection space SP is replaced. Thus, the detection accuracy of the sensor 13P can be improved.

[0250] According to the second embodiment, the plurality of fixed gas nozzles 15 are attached to the attachment plate 16, and the attachment portions 115 and the discharge portions 116 that integrally form the plurality of fixed gas nozzles 15 are formed. Therefore, the plurality of fixed gas nozzles 15 can be firmly attached to the attachment plate 16, and the positional relationship of the fixed gas nozzles 15 to each other can be firmly fixed. Therefore, the gas can be accurately supplied to the detection space DS.

[0251] Figure 18A and Figure 18B is a schematic view for explaining a variation of the atmosphere replacement step performed in the substrate processing of the second embodiment.

[0252] In the substrate processing apparatus 1P of the second embodiment, the atmosphere in the detection space DS can be replaced by the gas flow F formed by the gas flow forming unit 10 without discharging the gas from the fixed gas nozzles 15. Specifically, the first shield 30A is configured to switch the path of the gas flow F, and the path of the gas flow F is switched as follows: when the first shield 30A is positioned at the upper position, the gas flow F passes between the peripheral edge portion of the substrate W and the inner peripheral end portion (upper end portion) of the first shield 30A, and when the first shield 30A is positioned at the lower position, the gas flow F passes outside the first shield 30A.

[0253] More specifically, as shown in Figure 18A , when the first shield 30A is positioned at the upper position, the gap between the peripheral edge portion of the substrate W and the inner peripheral end portion of the first shield 30A is large, and therefore the gas flow F mainly passes between the inner peripheral end portion of the first shield 30A and the peripheral edge portion of the substrate W to reach the upstream end 34a of the exhaust pipe 34 (gas flow forming step). On the other hand, as shown in Figure 18B , when the first shield 30A is positioned at the lower position, the gap between the peripheral edge portion of the substrate W and the inner peripheral end portion of the first shield 30A is smaller than when the first shield 30A is positioned at the upper position. Therefore, the gas flow F mainly passes between the first shield 30A and the exhaust barrel 33 to reach the upstream end 34a of the exhaust pipe 34.

[0254] Thus, by positioning the first shield 30A at the upper position, the gas flow F that passes between the peripheral edge portion of the substrate W and the first shield 30A to the exhaust pipe 34 is formed in the chamber 8. Therefore, the atmosphere in the vicinity of the peripheral edge portion of the substrate W can be replaced with the gas carried by the gas flow F. That is, the gas supply and exhaust unit composed of the gas flow forming unit 10 and the exhaust pipe 34 functions as an atmosphere replacement unit. Therefore, when the peripheral edge portion of the substrate W is positioned in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, and therefore the amount of eccentricity E of the substrate W can be favorably reduced by the centering unit 14.

[0255] Further, a path width adjustment mechanism 160 can be provided between the exhaust barrel 33 and the first shield 30A to narrow the path of the gas flow F between the exhaust barrel 33 and the first shield 30A when the first shield 30A is in the upper position. The path width adjustment mechanism 160 is composed of, for example, a first flange 161 protruding from the first cylindrical portion 35A of the first shield 30A toward the side opposite to the center side of the shield 30, and a second flange 162 protruding from the exhaust barrel 33 toward the center side of the shield 30. The first flange 161 and the second flange 162 face each other in the vertical direction, and the gap between the first flange 161 and the second flange 162 becomes narrower as the first shield 30A is closer to the upper position.

[0256] <Other Embodiments>

[0257] The present application is not limited to the embodiments described above, and can be further implemented in other ways.

[0258] For example, in the embodiments described above, the substrate processing apparatus 1, 1P is provided with the transfer robot IR, CR, the processing unit 2, and the controller 3. However, the substrate processing apparatus 1, 1P can be composed of only the processing unit 2. In other words, the processing unit 2 can also be an example of a substrate processing apparatus.

[0259] Further, in the embodiments described above, the facing direction D1 of the light emitting portion 70 and the light receiving portion 71 in the sensor 13, 13P is in the vertical direction. However, the facing direction D1 is not necessarily in the vertical direction, and can be inclined with respect to the vertical direction. In other words, the high axis can also extend in a direction inclined with respect to the vertical direction.

[0260] Further, in the first embodiment described above, the first shield 30A can be configured to switch the path of the gas flow F, and the path of the gas flow F is switched such that the gas flow F passes between the peripheral edge portion of the substrate W and the inner peripheral end portion of the first shield 30A when the first shield 30A is in the upper position, and the gas flow F passes outside the first shield 30A when the first shield 30A is in the lower position. Therefore, a movement permission hole can be provided in the first shield 30A in a manner that allows the gas nozzle head 12 to move to the detection position when the first shield 30A is in the upper position.

[0261] Further, the centering unit 14 can be applied in the second embodiment described above, and conversely, if a movement permission hole that allows the gas nozzle head 12 to move to the detection position is provided in the first shield 30A, the centering unit 14P can also be applied in the first embodiment.

[0262] Further, in the second embodiment, instead of the plurality of fixed gas nozzles 15, a single fixed gas nozzle provided with a plurality of gas nozzle outlets 15a can be provided. Further, in the first embodiment, instead of the movable gas nozzle head 12, a plurality of nozzle outlets 60a arranged in the facing direction Dl can be provided.

[0263] Further, in the second embodiment, the first facing surface 127A and the second facing surface 127B are inclined with respect to the horizontal direction in such a manner that they are apart from each other as they go upward. However, the first facing surface 127A and the second facing surface 127B can be vertical surfaces. In this case, in a state where the substrate W is held by the two elevators 120 from both sides of the horizontal direction, the first shield 30A is moved upward, whereby the substrate W can be floated from the rotary base 21.

[0264] Further, the gas ejected from the movable gas nozzle 60 and the gas ejected from the first fixed gas nozzle 15A can not form a gas flow toward the annular space SP1, as long as the generation of the atmosphere fluctuation in the detection space DS due to the heating of the heater 50 can be suppressed.

[0265] In the embodiments, each block is schematically shown, but the shape, size, and positional relationship of each block are not indicative of the shape, size, and positional relationship of each component.

[0266] Although the embodiments of the present application have been described in detail, they are only specific examples for clearly understanding the technical contents of the present application, and the present application should not be interpreted as being limited to the specific examples, but should be interpreted as being defined by the appended claims.

Claims

1. A substrate processing apparatus comprising: a susceptor having a holding surface that holds a circular plate-shaped substrate in a horizontal posture; a rotation unit that rotates the susceptor around a vertical rotation axis; a heating unit that heats a peripheral portion of a substrate held on the holding surface; an eccentricity measuring unit having a light emitting portion that emits light and a light receiving portion that receives the light emitted from the light emitting portion, the eccentricity measuring unit measuring an eccentricity of the substrate with respect to the rotation axis when the peripheral portion of the substrate held on the holding surface is located in a detection space between the light emitting portion and the light receiving portion; a centering unit that moves the substrate on the holding surface with respect to the susceptor so that a central portion of the substrate is brought close to the rotation axis; and an atmosphere replacing unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space, wherein the atmosphere replacing unit includes a gas supply unit that supplies gas to the detection space, and the gas supply unit includes a moving gas nozzle head that moves together with the light emitting portion and the light receiving portion, supplies gas to the detection space, and moves between a detection position at which the peripheral portion of the substrate held on the holding surface is located in the detection space and a retreat position at which the peripheral portion of the substrate held on the holding surface is located outside the detection space.

2. The substrate processing apparatus according to claim 1, wherein the heating unit includes a heater that opposes the peripheral portion of the substrate held on the holding surface, and the gas supply unit ejects gas to a space between the peripheral portion of the substrate held on the holding surface and the heater.

3. The substrate processing apparatus according to claim 1 or 2, further comprising a chamber that houses the susceptor, and the atmosphere replacing unit includes an air supply and exhaust unit that performs air supply to a space in the chamber and air exhaust from the space in the chamber.

4. The substrate processing apparatus according to claim 3, further comprising a shield that surrounds the substrate held on the holding surface and is configured to move between an upper position at which an upper end portion of the shield is located above an upper surface of the substrate and a lower position at which the upper end portion of the shield is located below the upper surface of the substrate, the air supply and exhaust unit includes an exhaust pipe that exhausts an atmosphere in the chamber and an air flow forming unit that supplies the atmosphere to the chamber and forms an air flow toward the exhaust pipe in the chamber, and the shield switches a path of the air flow so that the air flow passes between the peripheral portion of the substrate held on the holding surface and the shield when the shield is located at the upper position and the air flow passes outside the shield when the shield is located at the lower position.

5. The substrate processing apparatus according to claim 1 or 2, wherein the centering unit includes an elevator configured to lift the substrate held on the holding surface or place the lifted substrate on the holding surface, and an elevator horizontal movement mechanism that brings the central portion of the substrate close to the rotation axis by horizontally moving the elevator.

6. The substrate processing apparatus according to claim 5, wherein a plurality of the elevators are provided. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The plurality of lifters have a facing portion facing the substrate from below the substrate held on the holding surface, The centering unit further includes a lifter vertical movement mechanism that moves the facing portion in a vertical direction between a first position above the holding surface and a second position below the holding surface.

7. The substrate processing apparatus according to claim 5, wherein the lifters are provided in a plurality. The plurality of lifters include a first lifter having a first facing surface facing a peripheral portion of a substrate held on the holding surface from a horizontal direction, and a second lifter having a second facing surface facing a peripheral portion of a substrate held on the holding surface from a horizontal direction opposite to the first facing surface, The second facing surface faces a peripheral portion of a substrate held on the holding surface from a horizontal direction opposite to the first facing surface. The lifter horizontal movement mechanism includes a first lifter horizontal movement mechanism that individually moves the first lifter and the second lifter, and a second lifter horizontal movement mechanism that integrally moves the first lifter and the second lifter, The first facing surface and the second facing surface are inclined with respect to the horizontal direction in such a manner that they move away from each other as they move upward.

8. A substrate position adjustment method, comprising: a substrate holding step of holding a substrate in a horizontal posture on a holding surface of a base in such a manner that a heater faces a peripheral portion of the substrate; an atmosphere replacement step of replacing an atmosphere existing in a detection space with an atmosphere outside the detection space, in a state in which the peripheral portion of the substrate is positioned in a space between a light emitting portion and a light receiving portion of a sensor, that is, the detection space; an eccentricity measurement step of detecting an eccentricity of the substrate with respect to a rotation axis of the base, while rotating the base about the rotation axis, during the atmosphere replacement step; and a positioning step of moving the substrate with respect to the base in accordance with the eccentricity detected by the eccentricity measurement step, thereby bringing a central portion of the substrate close to the rotation axis. In the method the atmosphere replacement step includes a gas supply step of supplying a gas to the detection space; and the gas supply step includes a step of supplying a gas to the detection space by moving a gas nozzle head, the moving gas nozzle head moving together with the light emitting portion and the light receiving portion, supplying a gas to the detection space, and moving between a detection position in which the peripheral portion of the substrate held on the holding surface is positioned in the detection space and a retreat position in which the peripheral portion of the substrate held on the holding surface is positioned outside the detection space. ​ 9. The substrate position adjusting method according to Claim 8, comprising a gas flow forming step of forming a gas flow toward an exhaust pipe through a peripheral portion of the substrate and the shield by configuring the shield in an upper position in a chamber that accommodates the shield and the susceptor, the shield surrounding the substrate and configured to move between an upper position in which an upper end portion of the shield is positioned above an upper surface of the substrate and a lower position in which the upper end portion of the shield is positioned below the upper surface of the substrate.

10. The substrate position adjusting method according to Claim 8, comprising a gas flow forming step of forming a gas flow toward an exhaust pipe through a peripheral portion of the substrate and the shield by configuring the shield in an upper position in a chamber that accommodates the shield and the susceptor, the shield surrounding the substrate and configured to move between an upper position in which an upper end portion of the shield is positioned above an upper surface of the substrate and a lower position in which the upper end portion of the shield is positioned below the upper surface of the substrate, wherein the gas flow forming step forms the gas flow toward the exhaust pipe through the peripheral portion of the substrate and the shield by configuring the shield in the upper position in the chamber, the shield surrounding the substrate and configured to move between the upper position in which the upper end portion of the shield is positioned above the upper surface of the substrate and the lower position in which the upper end portion of the shield is positioned below the upper surface of the substrate.

11. The substrate position adjusting method according to Claim 8, comprising a gas flow forming step of forming a gas flow

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