Temperature control methods, devices, electronic equipment, and storage media for etching stages

Abstract

This application provides a temperature control method, apparatus, electronic device, and storage medium for an etching stage. First, the real-time temperature of the etching stage and the real-time temperature control fluid are acquired. Then, based on the real-time temperature of the etching stage, the real-time temperature of the temperature control fluid, and a limiting temperature, a temperature control command is determined. Finally, a circulating temperature control fluid loop responds to the temperature control command, stabilizing the target operating temperature of the etching stage within a preset range. By increasing the feedback quantity of the real-time temperature of the etching stage, the response speed of temperature control is improved, and the temperature overshoot is reduced, resulting in a more regular temperature distribution on the substrate during etching. This solves the technical problem in existing technologies where uneven temperature distribution on the etching stage leads to substrate deformation and poor etching quality. The method achieves controllable and regular substrate deformation, ensuring the etching effect meets design expectations and improving etching quality.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a temperature control method, apparatus, electronic device, and storage medium for an etching stage. Background Technology

[0002] Etching is an important process in the fabrication of semiconductor components and integrated circuits. It is also used in the fabrication of thin-film circuits, printed circuits, and other intricate patterns. Etching involves selectively removing portions of the thin film that are not masked by the resist using chemical, physical, or a combination of both methods, thereby creating a pattern on the thin film that is identical to the pattern on the resist film.

[0003] Currently, etching technology is mainly divided into dry etching and wet etching. Dry etching mainly utilizes reactive gases and plasma for etching; wet etching mainly utilizes chemical reagents to react with the material being etched. Temperature has a significant impact on etching quality during the etching process; uneven heating and cooling can easily cause deformation of the etched substrate, leading to a decrease in etching quality.

[0004] Existing etching stages typically manage the temperature of the etching stage during etching by controlling the temperature of the coolant at the input end. However, since the coolant continuously absorbs heat as it flows through the pipes, there will be a temperature difference between the coolant at the input and output ends of the etching stage. This results in uneven temperature distribution of the etched substrate, which in turn causes substrate deformation and affects the etching quality. Summary of the Invention

[0005] This application provides a temperature control method, apparatus, electronic device, and storage medium for an etching worktable to solve the technical problem in the prior art where uneven temperature distribution in the etching worktable leads to substrate deformation and poor etching quality.

[0006] In a first aspect, this application provides a temperature control method for an etching stage, comprising:

[0007] The real-time temperature of the etching stage and the real-time temperature of the temperature control fluid are obtained. The real-time temperature of the etching stage is the current working temperature of the etching stage, and the real-time temperature of the temperature control fluid is the current working temperature of the temperature control fluid in the circulating temperature control fluid loop.

[0008] The temperature control command is determined based on the real-time temperature of the etching workbench, the real-time temperature of the temperature control liquid, and the limit temperature.

[0009] The circulating temperature control fluid circuit responds to the temperature control command and stabilizes the target operating temperature of the etching worktable within a preset range.

[0010] Optionally, determining the temperature control command based on the real-time temperature of the etching stage, the real-time temperature of the temperature control liquid, and the limiting temperature includes:

[0011] The initial temperature control command is determined based on the aforementioned temperature limit.

[0012] Acquire feedback signals, including the real-time temperature of the etching stage and the real-time temperature of the temperature control liquid;

[0013] The temperature control command is determined based on the feedback signal and the initial temperature control command.

[0014] In one possible design, the circulating temperature-controlled liquid circuit includes a central circuit and an edge circuit, wherein the first temperature-controlled pipe section of the central circuit located in the central region of the etching stage is not connected to the second temperature-controlled pipe section of the edge circuit located in the edge region of the etching stage.

[0015] In one possible design, the limiting temperature includes a center limiting temperature and an edge limiting temperature, and determining the initial temperature control command based on the limiting temperature includes:

[0016] The initial center temperature control command is determined based on the aforementioned center limit temperature;

[0017] The initial edge temperature control command is determined based on the edge limit temperature.

[0018] The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

[0019] In one possible design, the real-time temperature of the etching stage includes the temperature of the central region and the temperature of the edge region; the real-time temperature of the temperature-controlled fluid includes the first temperature-controlled fluid temperature of the central loop and the second temperature-controlled fluid temperature of the edge loop; the acquisition of the feedback signal includes:

[0020] Obtain a first feedback signal, the first feedback signal including the real-time detected temperature of the central region and the temperature of the first temperature control liquid;

[0021] Acquire a second feedback signal, the second feedback signal including the real-time detected temperature of the edge region and the temperature of the second temperature control liquid;

[0022] The feedback signal includes the first feedback signal and the second feedback signal.

[0023] In one possible design, determining the temperature control command based on the feedback signal and the initial temperature control command includes:

[0024] Based on the first feedback signal and the initial center temperature control command, the center temperature control command is determined;

[0025] The edge temperature control command is determined based on the second feedback signal and the initial edge temperature control command;

[0026] The temperature control commands include the center temperature control command and the edge temperature control command.

[0027] Optionally, the center limiting temperature is the same as the edge limiting temperature.

[0028] Secondly, this application provides a temperature control system for an etching stage, comprising:

[0029] The workbench includes a temperature control liquid circuit, a temperature regulation circuit, an evaporator, and a controller. Both the temperature control liquid circuit and the temperature regulation circuit pass through the evaporator. The temperature control liquid circuit and the temperature regulation circuit are not connected. The controller is electrically connected to both the temperature control liquid circuit and the temperature regulation circuit.

[0030] The temperature control fluid circuit of the workbench is used to regulate the temperature of the etching workbench.

[0031] The controller is used to control the temperature regulation loop, and adjusts the real-time temperature of the temperature control liquid in the worktable temperature control liquid loop through the evaporator, so that the target working temperature of the etching worktable is stabilized within a preset range.

[0032] Optionally, the workbench temperature control liquid circuit includes: a first sensor, a second sensor, a temperature control pipeline section distributed inside the etching workbench, and a transmission pipeline section outside the etching workbench. The first sensor is located in the transmission pipeline section, and the second sensor is located on the etching workbench. The first sensor and the second sensor are electrically connected to the controller.

[0033] The temperature control pipeline section is used to regulate the temperature of the etching workbench;

[0034] The first sensor is used to detect the real-time temperature of the temperature control liquid in the transmission pipeline section;

[0035] The second sensor is used to detect the real-time temperature of the etching stage;

[0036] Correspondingly, the controller is used to control the temperature regulation loop, including: the controller controls the temperature regulation loop according to the limit temperature, the real-time temperature of the temperature control liquid and the real-time temperature of the etching stage.

[0037] In one possible design, the temperature control circuit includes a throttle valve, a compressor, and an evaporator piping section. The input end of the compressor is connected to the output end of the evaporator piping section, the output end of the compressor is connected to the input end of the throttle valve, the output end of the throttle valve is connected to the input end of the evaporator piping section, and the throttle valve is electrically connected to the controller.

[0038] The compressor is used to drive the flow of the temperature-controlled medium in the temperature regulation circuit;

[0039] The throttle valve is used to receive temperature control commands from the controller in order to control the flow rate of the temperature-controlled medium;

[0040] The temperature-controlled medium flowing through the evaporator pipe section transfers heat between the evaporator and the temperature-controlled liquid in the worktable temperature-controlled liquid circuit, so as to stabilize the target working temperature of the etching worktable within a preset range.

[0041] In one possible design, the temperature control pipeline includes a first temperature control pipeline and a second temperature control pipeline. The first temperature control pipeline is located in the central area of ​​the etching stage, and the second temperature control pipeline is located in the edge area of ​​the etching stage. The first temperature control pipeline and the second temperature control pipeline are not connected within the etching stage.

[0042] The second sensor includes a central region sensor and an edge region sensor. The central region sensor is used to detect the real-time temperature of the central region of the etching stage, and the edge region sensor is used to detect the real-time temperature of the edge region of the etching stage.

[0043] Correspondingly, the controller determines the temperature control command based on the limit temperature, the real-time temperature of the central area, the real-time temperature of the edge area, and the real-time temperature of the temperature control fluid.

[0044] Optionally, a thermal insulation strip is provided between the first temperature-controlled pipe section and the second temperature-controlled pipe section, the thermal insulation strip being used to isolate heat transfer between the first temperature-controlled pipe section and the second temperature-controlled pipe section.

[0045] In one possible design, the workbench temperature control fluid circuit includes a central circuit and an edge circuit, which are independent circuits. The first temperature control pipeline segment is located in the central circuit, and the second temperature control pipeline segment is located in the edge circuit.

[0046] Optionally, the temperature control loop includes a central region temperature control loop and an edge region temperature control loop, and the evaporator includes a central region evaporator and an edge region evaporator.

[0047] Optionally, the workbench temperature control liquid circuit also includes a temperature control liquid pump, and the first sensor is used to detect the real-time temperature of the temperature control liquid at the output end of the temperature control liquid pump.

[0048] Thirdly, this application provides a temperature control device for an etching stage, comprising:

[0049] The acquisition module is used to acquire the real-time temperature of the etching worktable and the real-time temperature of the temperature control fluid. The real-time temperature of the etching worktable is the current working temperature of the etching worktable, and the real-time temperature of the temperature control fluid is the current working temperature of the temperature control fluid in the circulating temperature control fluid loop.

[0050] The processing module is used to determine the temperature control command based on the real-time temperature of the etching worktable, the real-time temperature of the temperature control fluid, and the limit temperature; the circulating temperature control fluid circuit responds to the temperature control command and stabilizes the target working temperature of the etching worktable within a preset range.

[0051] In one possible design, the processing module is configured to determine a temperature control command based on the real-time temperature of the etching stage, the real-time temperature of the temperature-controlled liquid, and a limiting temperature, including:

[0052] The processing module is used to determine the initial temperature control command based on the limit temperature;

[0053] The acquisition module is also used to acquire feedback signals, including the real-time temperature of the etching workbench and the real-time temperature of the temperature control liquid.

[0054] The processing module is further configured to determine the temperature control command based on the feedback signal and the initial temperature control command.

[0055] In one possible design, the circulating temperature-controlled liquid circuit includes a central circuit and an edge circuit, wherein the first temperature-controlled pipe section of the central circuit located in the central region of the etching stage is not connected to the second temperature-controlled pipe section of the edge circuit located in the edge region of the etching stage.

[0056] Optionally, the limiting temperature includes a center limiting temperature and an edge limiting temperature. The processing module is further configured to determine an initial temperature control command based on the limiting temperature, including:

[0057] The processing module is also used to determine an initial center temperature control command based on the center limit temperature;

[0058] The processing module is also used to determine an initial edge temperature control command based on the edge limit temperature;

[0059] The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

[0060] In one possible design, the real-time temperature of the etching stage includes the temperature of the central region and the temperature of the edge region, and the real-time temperature of the temperature-controlled fluid includes the first temperature-controlled fluid temperature of the central loop and the second temperature-controlled fluid temperature of the edge loop; the acquisition module is further configured to acquire feedback signals, including:

[0061] The acquisition module is further configured to acquire a first feedback signal, the first feedback signal including the real-time detected temperature of the central region and the temperature of the first temperature control liquid;

[0062] The acquisition module is further configured to acquire a second feedback signal, the second feedback signal including the real-time detected temperature of the edge region and the temperature of the second temperature control liquid;

[0063] The feedback signal includes the first feedback signal and the second feedback signal.

[0064] Optionally, the processing module is further configured to determine the temperature control command based on the feedback signal and the initial temperature control command, including:

[0065] The processing module is further configured to determine a center temperature control command based on the first feedback signal and the initial center temperature control command;

[0066] The processing module is further configured to determine the edge temperature control command based on the second feedback signal and the initial edge temperature control command;

[0067] The temperature control commands include the center temperature control command and the edge temperature control command.

[0068] In one possible design, the center limiting temperature is the same as the edge limiting temperature.

[0069] Fourthly, this application provides an electronic device, comprising:

[0070] Memory, used to store program instructions;

[0071] The processor is configured to call and execute program instructions in the memory to perform any of the possible temperature control methods for the etching stage provided in the first aspect.

[0072] Fifthly, this application provides a storage medium storing a computer program for executing any of the possible temperature control methods for an etching stage provided in the first aspect.

[0073] This application provides a temperature control method, apparatus, electronic device, and storage medium for an etching stage. First, the real-time temperature of the etching stage and the real-time temperature control fluid are acquired. Then, based on the real-time temperature of the etching stage, the real-time temperature of the temperature control fluid, and a limiting temperature, a temperature control command is determined. Finally, a circulating temperature control fluid loop responds to the temperature control command, stabilizing the target operating temperature of the etching stage within a preset range. By increasing the feedback of the real-time temperature of the etching stage, the response speed of temperature control is improved, and the temperature overshoot is reduced, resulting in a more regular temperature distribution on the substrate during etching. By dividing the temperature control pipeline into regions, the path of the temperature control fluid on the etching platform is shortened, avoiding excessive temperature differences between the input and output ends of the temperature control fluid, thus improving the temperature control response speed and reducing temperature fluctuations. This solves the technical problem in the prior art where uneven temperature distribution on the etching stage leads to substrate deformation and poor etching quality, achieving controllable and regular substrate deformation, etching results that meet design expectations, and improved etching quality. Attached Figure Description

[0074] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0075] Figure 1 A schematic diagram of the temperature distribution of an etching stage in the prior art provided in this application;

[0076] Figure 2 This is a schematic diagram of a temperature control liquid flow pipeline for an etching workbench, as provided in this application.

[0077] Figure 3 This is a schematic diagram of the structure of an etching stage temperature control system provided in an embodiment of this application;

[0078] Figure 4 A schematic flowchart illustrating a temperature control method for an etching worktable provided in an embodiment of this application;

[0079] Figure 5 This is a schematic diagram of another etching stage temperature control system provided in an embodiment of this application;

[0080] Figure 6 This is a schematic diagram of another etching stage temperature control pipeline layout provided in an embodiment of this application;

[0081] Figure 7 A schematic flowchart illustrating another temperature control method for an etching stage provided in an embodiment of this application;

[0082] Figure 8 This is a schematic diagram of another etching stage temperature control system provided in an embodiment of this application;

[0083] Figure 9 A schematic diagram of the temperature distribution of an etching stage using the temperature control method of this application, provided for an embodiment of this application;

[0084] Figure 10 A schematic diagram of the structure of a temperature control device for an etching workbench provided in this application;

[0085] Figure 11 This is a schematic diagram of the structure of an electronic device provided in this application. Detailed Implementation

[0086] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort, including but not limited to combinations of multiple embodiments, are within the scope of protection of this application.

[0087] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0088] Etching is an important process in the fabrication of semiconductor components and integrated circuits. It is also used in the fabrication of thin-film circuits, printed circuits, and other intricate patterns. Etching involves selectively removing portions of the thin film that are not masked by the resist using chemical, physical, or a combination of both methods, thereby creating a pattern on the thin film that is identical to the pattern on the resist film.

[0089] Temperature has a significant impact on etching quality during the etching process. Uneven heating and cooling can easily cause deformation of the etched substrate, leading to a decrease in etching quality.

[0090] Figure 1 This is a schematic diagram of the temperature distribution of an etching stage in the prior art provided in this application. Figure 1 As shown, in a certain integrated circuit etching process, the temperature distribution map at a certain moment is captured by the etching workbench monitoring system. It can be seen that the temperature distribution at this time is an asymmetrical figure. The asymmetrical distribution will cause the substrate deformation to be uncontrollable and unpredictable, which in turn affects the irregular distribution of etching indicators such as etching depth.

[0091] It is evident that uneven or irregular temperature distribution is a significant factor affecting etching quality. The inventors of this application have conducted an in-depth analysis on how to address the problem of uneven or irregular temperature distribution in existing technologies.

[0092] Figure 2 This is a schematic diagram of a temperature-controlled liquid flow pipeline for an etching workbench, as provided in this application. Figure 2 As shown, the existing temperature control system of the etching stage generally manages the temperature of the etching stage 200 during the etching process by controlling the temperature of the temperature control fluid at the input end A of the etching stage 200. However, since the temperature control fluid continuously absorbs heat when flowing in the pipeline 201, the temperature difference between the temperature control fluid at the input end A and the output end B of the etching stage 200 will be large, resulting in uneven temperature distribution of the etched substrate, which will cause substrate deformation and affect the etching quality.

[0093] The most direct solution to this problem is to replace the temperature control fluid with one that has a higher specific heat capacity and better fluidity. A higher specific heat capacity allows it to absorb more heat without causing the temperature to rise too much, while better fluidity allows the temperature control fluid to flow out of the etching stage quickly, thus rapidly carrying away the heat. However, improvements in the physicochemical properties of existing temperature control fluids are insufficient to meet the temperature control requirements of the etching process, or the cost of using and maintaining the temperature control fluid is too high.

[0094] Another common solution is to lower the temperature control threshold of the temperature-controlled fluid. Current technology controls the etching stage temperature by controlling the temperature of the temperature-controlled fluid at input end A of pipe 201. Theoretically, limiting this temperature to a lower level should solve the problem of heat not being dissipated from the etching stage in a timely manner. However, in actual testing, it was found that the circulating temperature-controlled fluid, after flowing out from output end B, needs to pass through an air-cooling pipe or other heat dissipation / heating device to bring the temperature at input end A to the preset value. This means the path of the temperature-controlled fluid from output end B back to input end A through the circulation loop is relatively long. This means that temperature monitoring at input end A cannot detect temperature changes on the etching stage in a timely manner. The temperature control system only detects changes when the heat on the etching stage deviates significantly from the allowable range. Therefore, even lowering the temperature control threshold does not solve the problem of not being able to detect sudden temperature changes on the etching stage in a timely manner, leading to irregular deformation of the substrate.

[0095] It is evident that the technical challenge of addressing the issue of uneven or irregular temperature distribution on the etching stage lies in eliminating or shortening the delay in detecting temperature changes. Currently, the temperature distribution of the etching stage requires manual measurement by testing personnel using additional instruments. This necessitates generating extensive test data for each etched product to establish an adjustment strategy for the temperature control system. This process is time-consuming and costly, and repeating these extensive tests with each new etched product is clearly impractical.

[0096] Furthermore, because the conventional thinking in existing technology regarding the controlled object of temperature control systems is the temperature control fluid, the control feedback signal only adjusts the temperature of the temperature control fluid. This makes the temperature of the temperature control fluid stable at the temperature sensor, but for the etching stage, it is an indirect temperature control target, thus failing to achieve precise control of the etching stage temperature.

[0097] Therefore, in view of the technical problem that the temperature of the etching stage is adjusted by the temperature feedback of the temperature control liquid in the prior art, which leads to uneven or irregular temperature distribution of the etching stage, resulting in uncontrollable deformation of the etched substrate, affecting the etching quality, and increasing the cost and difficulty of subsequent product testing, this application proposes a temperature control method for the etching stage, which will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0098] Figure 3 This is a schematic diagram of the structure of an etching stage temperature control system provided in an embodiment of this application, as shown below. Figure 3As shown, the etching stage temperature control system includes: a stage temperature control fluid circuit 301, a temperature regulation circuit 302, an evaporator 303, and a controller 304. Both the stage temperature control fluid circuit 301 and the temperature regulation circuit 302 pass through the evaporator 303, but are not connected. The controller 304 is electrically connected to both the stage temperature control fluid circuit 301 and the temperature regulation circuit 302.

[0099] Specifically, the workbench temperature control fluid circuit 301 includes: a workbench temperature sensor 3011 (the second sensor) mounted on the etching workbench 300; a temperature control fluid temperature sensor 3012 (the first sensor) included in the workbench temperature control fluid circuit 301; and temperature control pipeline sections distributed within the etching workbench and transmission pipeline sections outside the etching workbench. The workbench temperature sensor 3011 is used to detect the real-time temperature of the etching workbench, and the temperature control fluid temperature sensor 3012 is used to detect the real-time temperature of the temperature control fluid at the outlet of the temperature control fluid pump in the transmission pipeline section outside the etching workbench of the temperature control fluid circuit 301. The temperature signals from the temperature sensors are transmitted to the controller 304 as temperature control feedback signals.

[0100] The worktable temperature control liquid circuit 301 is used to regulate the temperature of the etching worktable 300;

[0101] The controller 304 is used to control the temperature regulation circuit 302, and adjusts the real-time temperature of the temperature control liquid in the worktable temperature control liquid circuit 301 through the evaporator 303, so that the target working temperature of the etching worktable 300 is stabilized within the preset range.

[0102] The temperature control circuit 302 includes: a throttle valve, a compressor, and an evaporator piping section. The input end of the compressor is connected to the output end of the evaporator piping section, the output end of the compressor is connected to the input end of the throttle valve, the output end of the throttle valve is connected to the input end of the evaporator piping section, and the throttle valve is electrically connected to the controller.

[0103] The compressor is used to drive the flow of the temperature-controlled medium (liquid or gas) within the temperature regulation circuit 302;

[0104] The throttle valve is used to receive temperature control commands from the controller 304 to control the flow rate of the temperature-controlled medium;

[0105] The temperature control medium flowing through the evaporator pipeline section transfers heat between the evaporator 303 and the temperature control liquid in the worktable temperature control liquid circuit 301, so as to stabilize the target working temperature of the etching worktable 300 within the preset range.

[0106] It should be noted that the number of stage temperature sensors 3011 can be more than one. In one possible implementation, multiple stage temperature sensors 3011 are evenly distributed and installed on the etching stage 300, such as in a ring arrangement or a matrix arrangement. In this case, the real-time temperature of the etching stage is measured by the multiple stage temperature sensors 3011. It is understood that the multiple stage temperature sensors 3011 can also be non-uniformly distributed, but arranged according to the actual temperature detection requirements. This application does not limit the installation and distribution of the stage temperature sensors 3011; those skilled in the art can choose the specific implementation method according to the actual situation. Similarly, there can also be multiple temperature control fluid sensors 3012, which can be distributed at multiple locations in the stage temperature control fluid circuit 301. In this case, the real-time temperature of the temperature control fluid is the average temperature measured by the multiple temperature control fluid sensors 3012.

[0107] Figure 3 The workflow of the etching stage temperature control system shown is as follows: Figure 4 As shown.

[0108] Figure 4 A schematic flowchart of a temperature control method for an etching stage provided in this application embodiment is shown below. Figure 4 As shown, the specific steps of the temperature control method for this etching stage include:

[0109] S401. Obtain the real-time temperature of the etching worktable and the real-time temperature of the temperature control fluid.

[0110] In this step, the real-time temperature of the etching stage is the current operating temperature of the etching stage, and the real-time temperature of the temperature control fluid is the current operating temperature of the temperature control fluid in the circulating temperature control fluid loop.

[0111] The real-time temperature of the etching stage and the temperature control fluid are monitored by temperature sensors.

[0112] S402. Determine the temperature control command based on the real-time temperature of the etching stage, the real-time temperature of the temperature control fluid, and the limit temperature.

[0113] In this step, the real-time temperature of the etching stage is the main feedback signal, the real-time temperature of the temperature control fluid is the auxiliary feedback signal, and the limiting temperature is the upper limit of the temperature that the etching stage is allowed to reach within a certain time period according to the etching process steps, or a certain temperature control range such as [35,38] degrees Celsius.

[0114] Specifically, the controller 304 can utilize a dual closed-loop feedback model to form a main closed-loop feedback control by combining the real-time temperature of the etching stage with the limiting temperature, and an auxiliary closed-loop feedback control by combining the real-time temperature of the temperature control fluid with the limiting temperature. By combining the two, a temperature control command that comprehensively considers the temperature control of both the stage and the temperature control fluid at all times is generated.

[0115] It should be noted that, unlike the existing technology which uses the temperature of the temperature control liquid as the main feedback control strategy, the embodiments of this application use the real-time temperature of the etching stage as the main control object. That is, the control strategy is more inclined to control the temperature of the etching stage. In this way, when the temperature of the etching stage changes, the temperature adjustment control can be made in a timely manner, which greatly improves the response speed of the etching stage temperature control system, quickly issues corresponding adjustment commands to the temperature changes of the etching stage, reduces the temperature fluctuation range of the etching stage, and improves the etching quality of the etched products.

[0116] In one possible design, a neural network model can be used to process the real-time temperature of the etching stage, the real-time temperature of the temperature control fluid, and the limiting temperature to establish a self-learning or adaptive temperature control strategy. This avoids the need to build a separate control model or control strategy for each etching product, reducing the workload of developers and lowering temperature control costs.

[0117] S403, the circulating temperature control liquid circuit responds to the temperature control command and stabilizes the target working temperature of the etching stage within the preset range.

[0118] In this step, the circulating temperature control fluid circuit includes the workbench temperature control fluid circuit 301 and the temperature regulation circuit 302. After determining the temperature control command, the controller 304 sends the temperature control command to the throttle valve of the temperature regulation circuit 302. The temperature control command is used to control the opening of the throttle valve to control the flow rate of the temperature control medium (liquid or gas) in the temperature regulation circuit 302.

[0119] After the compressor pressurizes the temperature-controlled medium (liquid or gas), the flow rate or velocity can be adjusted using a throttling valve. When the temperature-controlled medium in the temperature control circuit 302 flows through the evaporator 303 (i.e., when the liquid or gas is in the evaporator piping section), it absorbs or carries away the heat from the temperature-controlled liquid in the piping section of the workbench temperature-controlled liquid circuit 301 located inside the evaporator, causing the real-time temperature of the temperature-controlled liquid in the workbench temperature-controlled liquid circuit 301 to decrease.

[0120] In simple terms, the heat generated during the etching process is transferred to the etching stage via the etched substrate. As the temperature-controlled fluid in the stage's temperature-controlled fluid circuit 301 flows through the pipes within the etching stage, it absorbs the heat. As the fluid flows into the evaporator, the heat is carried away, with some dissipated into the air and some absorbed and carried away by the temperature-controlled medium in the temperature regulation circuit 302, thus achieving the transfer of etching heat. The temperature control method in this embodiment can detect heat transfer to the stage promptly and accelerate the heat transfer rate by controlling the opening of the throttle valve, transferring the heat away from the stage as early as possible. This avoids heat accumulation that could cause the substrate temperature to rise, leading to thermal expansion and contraction deformation.

[0121] This application provides a temperature control method for an etching stage. First, the real-time temperature of the etching stage and the real-time temperature of the temperature-controlled fluid are acquired. Then, based on the real-time temperature of the etching stage, the real-time temperature of the temperature-controlled fluid, and a limiting temperature, a temperature control command is determined. Finally, a circulating temperature-controlled fluid loop responds to the temperature control command, stabilizing the target operating temperature of the etching stage within a preset range. By increasing the feedback quantity of the real-time temperature of the etching stage, the response speed of temperature control is improved, and the temperature overshoot is reduced. This makes the temperature distribution of the substrate more regular during etching, solving the technical problem in the prior art where uneven temperature distribution of the etching stage leads to substrate deformation and poor etching quality. The method achieves the technical effect of controllable and regular substrate deformation, etching effect meeting design expectations, and improved etching quality.

[0122] Figure 5 This is a schematic diagram of another etching stage temperature control system provided in an embodiment of this application, as shown below. Figure 5 As shown, the etching stage temperature control system includes: a central loop 501, a central area temperature regulation loop 502, a central area evaporator 503, a controller 504, and an edge loop 505, an edge area temperature regulation loop 506, an edge area evaporator 507, and a controller 508. The first temperature control pipeline section of the central loop 501 located in the central area of ​​the etching stage is not connected to the second temperature control pipeline section of the edge loop 505 located in the edge area of ​​the etching stage 500. A first stage temperature sensor 5011 and a second stage temperature sensor 5051 are installed on the etching stage. The central loop 501 includes a first temperature control liquid temperature sensor 5012, and the edge loop 505 includes a second temperature control liquid temperature sensor 5052.

[0123] like Figure 5 As shown, the central loop 501 and the edge loop 505 are located in temperature control device 1 and temperature control device 2, respectively. The two temperature control devices coordinate with each other under the control of controller 504 and controller 508 to complete the temperature control of the etching workbench 500.

[0124] It should be noted that in the central loop 501 or the edge loop 505, the temperature control fluid is stored in a storage tank. The temperature control fluid pump pumps the temperature control fluid out of the storage tank. The first temperature control fluid temperature sensor 5012 and the second temperature control fluid temperature sensor 5052 monitor the real-time temperature of the temperature control fluid at the outlet of the temperature control fluid pump. Of course, it is understandable that the first temperature control fluid temperature sensor 5012 and / or the second temperature control fluid temperature sensor 5052 can also be set as multiple temperature sensors, distributed at various locations in the pipeline, and then the average temperature of multiple temperature sensors can be taken as the real-time temperature of the temperature control fluid.

[0125] It should also be noted that after the compressors in the central zone temperature regulation loop 502 and the edge zone temperature regulation loop 506 pressurize the temperature control medium (liquid or gas), the flow rate or flow rate is controlled by the throttle valve 1 and the throttle valve 2, so that the temperature control medium carries away the heat of the temperature control liquid in the central loop 501 and the edge loop 505 through the central zone evaporator 503 and the edge zone evaporator 507.

[0126] In one possible design, controller 504 and controller 508 are the same controller.

[0127] Because the existing technology uses excessively long piping routes for the temperature-controlled fluid within the etching stage, a significant temperature difference occurs between the inlet and outlet of the piping. This is because the temperature-controlled fluid continuously absorbs heat from the etching stage as it flows. To expedite the removal of heat from the etching stage, this embodiment divides the piping within the etching stage into two independent, non-connected regions: a first temperature-controlled piping section and a second temperature-controlled piping section. Specifically, the temperature-controlled piping section of the etching stage includes a first temperature-controlled piping section and a second temperature-controlled piping section. The first temperature-controlled piping section is located in the central region of the etching stage, and the second temperature-controlled piping section is located at the edge region of the etching stage. The first and second temperature-controlled piping sections are not connected within the etching stage. The following describes the process in conjunction with... Figure 6 Let me give you a detailed introduction.

[0128] Figure 6 This is a schematic diagram of another etching stage temperature control pipeline layout provided in an embodiment of this application, as shown below. Figure 6 As shown, a first temperature control pipe section 5001 is arranged in the central area of ​​the etching stage 500; this temperature control pipe section is the channel for the flow of the temperature control fluid. A second temperature control pipe section 5002 is arranged in the edge area of ​​the etching stage 500, and the second temperature control pipe section 5002 is not connected to the first temperature control pipe section 5001, meaning the temperature control fluid flows independently in these two pipes. This shortens the flow path of the temperature control fluid in the etching stage, quickly removing heat from the etching stage and stabilizing the temperature of the etching stage within a preset range, thus effectively solving the problem of uneven or irregular temperature distribution.

[0129] In one possible design, the first temperature-controlled conduit section 5001 and the second temperature-controlled conduit section 5002 are further separated by an insulating strip 5003. The insulating strip 5003 is used to isolate heat transfer between the first temperature-controlled conduit section 5001 and the second temperature-controlled conduit section 5002. The insulating strip 5003 can be made into a hollow groove filled with heat-insulating material, thus preventing heat transfer between the first temperature-controlled conduit section 5001 and the second temperature-controlled conduit section 5002, instead of the unfavorable situation of heat being quickly transferred outside the etching stage.

[0130] The specific steps of the temperature control method of the etching stage temperature control system in this embodiment are described below. Figure 7 Let me give you a detailed introduction.

[0131] Figure 7 A schematic flowchart of another temperature control method for an etching stage provided in this application embodiment is shown below. Figure 7 As shown, the specific steps of the temperature control method for this etching stage include:

[0132] S701, Obtain the real-time temperature of the etching worktable and the real-time temperature of the temperature control fluid.

[0133] In this step, the real-time temperature of the etching stage is the current operating temperature of the etching stage, and the real-time temperature of the temperature control fluid is the current operating temperature of the temperature control fluid in the circulating temperature control fluid loop.

[0134] like Figure 5 and Figure 6 As shown, the real-time temperature of the etching stage and the temperature control fluid are monitored in real time using temperature sensors, including:

[0135] At a certain moment, the first stage temperature sensor 5011 and the second stage temperature sensor 5051 acquire the current working temperature of the central region and the edge region of the etching stage 500, respectively, and at the same time acquire the temperature of the temperature control fluid in the central loop 501 and the edge loop 505 monitored by the first temperature control fluid temperature sensor 5012 and the second temperature control fluid temperature sensor 5052.

[0136] S702. Determine the initial temperature control command based on the limiting temperature.

[0137] In this step, the limiting temperature includes a center limiting temperature and an edge limiting temperature, specifically including:

[0138] The initial center temperature control command is determined based on the center limit temperature.

[0139] The initial edge temperature control command is determined based on the edge limit temperature.

[0140] The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

[0141] It should be noted that, depending on the etched product or the requirements of the etching process, the temperature of the central and edge areas of the etching stage may be inconsistent. In this case, the initial center temperature control command and the initial edge temperature control command are used to preheat the stage according to the preset optimal temperature for the etching process.

[0142] It is understood that if the temperature requirements of the central region and the edge region are consistent, then the central limiting temperature is the same as the edge limiting temperature, and the initial central temperature control command and the initial edge temperature control command are the same temperature control command.

[0143] It should also be noted that the physical property of the temperature control fluid is that its thermal conductivity is highest within a certain temperature range. Therefore, a heating module or device is included in the compressor to preheat the temperature control fluid in the central and peripheral circuits through the evaporator. This ensures that the temperature control fluid operates at its optimal heat absorption temperature, thus reaching the target operating temperature.

[0144] S703: Acquire feedback signals, including the real-time temperature of the etching stage and the real-time temperature of the temperature control fluid.

[0145] In this step, the real-time temperature of the etching stage includes both the central area temperature and the edge area temperature. Specific steps include:

[0146] Acquire a first feedback signal, which includes the real-time detected temperature of the central region and the temperature of the first temperature control liquid;

[0147] Acquire a second feedback signal, which includes the real-time detected edge region temperature and the second temperature control liquid temperature;

[0148] The feedback signals include a first feedback signal and a second feedback signal.

[0149] The controller can use a dual-loop PID control algorithm or a neural network model to perform feedback control on the central and edge areas of the etching stage. Through the self-learning model of the neural network, the control strategy can automatically adjust the parameters according to different etching products without human intervention.

[0150] S704. Determine the temperature control command based on the feedback signal and the initial temperature control command.

[0151] This step specifically includes:

[0152] The center temperature control command is determined based on the first feedback signal and the initial center temperature control command;

[0153] The edge temperature control command is determined based on the second feedback signal and the initial edge temperature control command;

[0154] Temperature control commands include center temperature control commands and edge temperature control commands.

[0155] Specifically, the temperature changes in the central and edge areas of the etching stage are monitored in real time using first and second feedback signals. Changes in the temperature-controlled fluid are also incorporated into the overall control strategy to maintain the fluid at a temperature that allows for efficient heat absorption. The initial center and edge temperature control commands represent the etching stage temperature and temperature-controlled fluid temperature corresponding to the normal operating conditions of the central and edge areas. Furthermore, the temperatures of the central and edge areas can be configured according to different etching process flows to achieve high-precision processing of the etched products, thereby further improving the performance of integrated circuits.

[0156] It should be noted that, unlike the existing technology which uses the temperature of the temperature control liquid as the main feedback control strategy, the embodiments of this application use the real-time temperature of the etching stage as the main control object. That is, the control strategy is more inclined to control the temperature of the etching stage. In this way, when the temperature of the etching stage changes, the temperature adjustment control can be made in a timely manner, which greatly improves the response speed of the etching stage temperature control system, quickly issues corresponding adjustment commands to the temperature changes of the etching stage, reduces the temperature fluctuation range of the etching stage, and improves the etching quality of the etched products.

[0157] S705, the circulating temperature control fluid circuit responds to the temperature control command and stabilizes the target working temperature of the etching stage within the preset range.

[0158] In this step, controllers 504 and 508 send center temperature control commands and edge temperature control commands to throttle valves 1 and 2 respectively, controlling the flow rate or velocity of the temperature control medium in the center area temperature regulation loop 502 and the edge area temperature regulation loop 506, so as to regulate the rate at which the temperature control medium carries away heat from the temperature control liquid through the evaporators (center area evaporator 503 and edge area evaporator 507), ultimately stabilizing the target working temperature of the etching stage within the preset range.

[0159] This embodiment provides a temperature control method for an etching stage. First, the real-time temperature of the etching stage and the real-time temperature control fluid are acquired. Then, based on the real-time temperature of the etching stage, the real-time temperature of the temperature control fluid, and a limiting temperature, a temperature control command is determined. Finally, the circulating temperature control fluid loop responds to the temperature control command, stabilizing the target operating temperature of the etching stage within a preset range. By increasing the feedback of the real-time temperature of the etching stage, the response speed of temperature control is improved, and the temperature overshoot is reduced, resulting in a more regular temperature distribution on the substrate during etching. By dividing the temperature control pipeline into regions, the running path of the temperature control fluid on the etching platform is shortened, avoiding excessive temperature differences between the input and output ends of the temperature control fluid. This improves the temperature control response speed, reduces temperature fluctuations, and solves the technical problem in existing technologies where uneven temperature distribution on the etching stage leads to substrate deformation and poor etching quality. This method achieves the technical effect of controllable and regular substrate deformation, etching results that meet design expectations, and improved etching quality.

[0160] Figure 8 This is a schematic diagram of another etching stage temperature control system provided in the embodiments of this application, as shown below. Figure 8 As shown, the central loop 501 and the edge loop 505 share a set of temperature control equipment, that is, pumps 1 and 2 respectively supply temperature control in the storage tank. Figure 6 The first temperature control pipe section 5001 and the second temperature control pipe section 5002 in the process deliver temperature control fluid, which will eventually converge in the delivery pipe outside the etching workbench and enter the evaporator 503 for heat dissipation or heating. Figure 8 The structure requires minimal modification to the temperature control equipment while still achieving compatibility with... Figure 5 The two temperature control devices shown serve a similar purpose, reducing the cost of equipment modification.

[0161] Figure 9 A schematic diagram of the temperature distribution of the etching stage using the temperature control method of this application is provided for an embodiment of this application, as shown below. Figure 9 As shown, the temperature distribution of the etching stage is a regular distribution, so even if the substrate deforms due to heat, it is within a controllable range, and the deformation is symmetrical and predictable in advance, unlike the asymmetrical structure of existing technologies (such as...). Figure 1 As shown in the diagram, this facilitates the development of etching processes, subsequent quality inspections, and the classification of etched products. Since temperature distribution is correlated with etching depth, the etching depth distribution of the single-crystal silicon on the etching stage can also be determined directly from the temperature distribution of the etching stage. Figure 9 The similar distribution shown provides a guarantee for improving etching quality.

[0162] Figure 10This is a schematic diagram of a temperature control device for an etching worktable provided in this application. The temperature control device for the etching worktable can be implemented through software, hardware, or a combination of both.

[0163] like Figure 10 As shown, the temperature control device 1000 of the etching stage includes:

[0164] The acquisition module 1001 is used to acquire the real-time temperature of the etching worktable and the real-time temperature of the temperature control fluid. The real-time temperature of the etching worktable is the current working temperature of the etching worktable, and the real-time temperature of the temperature control fluid is the current working temperature of the temperature control fluid in the circulating temperature control fluid loop.

[0165] The processing module 1002 is used to determine a temperature control command based on the real-time temperature of the etching worktable, the real-time temperature of the temperature control fluid, and the limit temperature; the circulating temperature control fluid circuit responds to the temperature control command and stabilizes the target working temperature of the etching worktable within a preset range.

[0166] In one possible design, the processing module 1002 is used to determine a temperature control command based on the real-time temperature of the etching stage, the real-time temperature of the temperature control liquid, and a limiting temperature, including:

[0167] The processing module 1002 is used to determine an initial temperature control command based on the limit temperature;

[0168] The acquisition module 1001 is also used to acquire feedback signals, the feedback signals including the real-time temperature of the etching workbench and the real-time temperature of the temperature control liquid;

[0169] The processing module 1002 is further configured to determine the temperature control command based on the feedback signal and the initial temperature control command.

[0170] In one possible design, the circulating temperature-controlled liquid circuit includes a central circuit and an edge circuit, wherein the first temperature-controlled pipe section of the central circuit located in the central region of the etching stage is not connected to the second temperature-controlled pipe section of the edge circuit located in the edge region of the etching stage.

[0171] Optionally, the limiting temperature includes a center limiting temperature and an edge limiting temperature. The processing module 1002 is further configured to determine an initial temperature control command based on the limiting temperature, including:

[0172] The processing module 1002 is further configured to determine an initial center temperature control command based on the center limit temperature;

[0173] The processing module 1002 is further configured to determine an initial edge temperature control command based on the edge limit temperature;

[0174] The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

[0175] In one possible design, the real-time temperature of the etching stage includes the temperature of the central region and the temperature of the edge region, and the real-time temperature of the temperature-controlled fluid includes the first temperature-controlled fluid temperature of the central loop and the second temperature-controlled fluid temperature of the edge loop; the acquisition module 1001 is further configured to acquire feedback signals, including:

[0176] The acquisition module 1001 is further configured to acquire a first feedback signal, the first feedback signal including the temperature of the central region and the temperature of the first temperature control liquid detected in real time.

[0177] The acquisition module 1001 is further configured to acquire a second feedback signal, the second feedback signal including the real-time detected edge region temperature and the second temperature control liquid temperature;

[0178] The feedback signal includes the first feedback signal and the second feedback signal.

[0179] Optionally, the processing module 1002 is further configured to determine the temperature control command based on the feedback signal and the initial temperature control command, including:

[0180] The processing module 1002 is further configured to determine the center temperature control command based on the first feedback signal and the initial center temperature control command;

[0181] The processing module 1002 is further configured to determine the edge temperature control command based on the second feedback signal and the initial edge temperature control command;

[0182] The temperature control commands include the center temperature control command and the edge temperature control command.

[0183] In one possible design, the center limiting temperature is the same as the edge limiting temperature.

[0184] It is worth noting that, Figure 10 The temperature control device of the etching stage provided in the embodiment shown can execute the method provided in any of the above method embodiments. Its specific implementation principle, technical features, explanation of technical terms and technical effects are similar, and will not be repeated here.

[0185] Figure 11 This is a schematic diagram of the structure of an electronic device provided in this application. Figure 11 As shown, the electronic device 1100 may include at least one processor 1101 and a memory 1102. Figure 11 The example shown is an electronic device using a processor.

[0186] The memory 1102 is used to store programs. Specifically, the program may include program code, which includes computer operation instructions.

[0187] The memory 1102 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage.

[0188] The processor 1101 is used to execute computer execution instructions stored in the memory 1102 to implement the methods described in the above embodiments.

[0189] The processor 1101 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application.

[0190] Optionally, the memory 1102 can be either standalone or integrated with the processor 1101. When the memory 1102 is a device independent of the processor 1101, the electronic device 1100 may further include:

[0191] Bus 1103 is used to connect the processor 1101 and the memory 1102. The bus can be an industry standard architecture (ISA) bus, a peripheral component interconnect (PCI) bus, or an extended industry standard architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc., but this does not mean there is only one bus or one type of bus.

[0192] Optionally, in a specific implementation, if the memory 1102 and the processor 1101 are integrated on a single chip, the memory 1102 and the processor 1101 can communicate through an internal interface.

[0193] This application also provides a computer-readable storage medium, which may include various media capable of storing program code, such as a USB flash drive, a portable hard drive, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk. Specifically, the computer-readable storage medium stores program instructions, which are used for the temperature control method of the etching stage in the above-described method embodiments.

[0194] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method for temperature control of an etching stage, characterized in that, include: The real-time temperature of the etching stage and the real-time temperature of the temperature control fluid are obtained. The real-time temperature of the etching stage is the current working temperature of the etching stage, and the real-time temperature of the temperature control fluid is the current working temperature of the temperature control fluid in the circulating temperature control fluid loop. The temperature control command is determined based on the real-time temperature of the etching workbench, the real-time temperature of the temperature control liquid, and the limit temperature. The circulating temperature control fluid circuit responds to the temperature control command and stabilizes the target working temperature of the etching workbench within a preset range; The step of determining the temperature control command based on the real-time temperature of the etching workbench, the real-time temperature of the temperature control liquid, and the limiting temperature includes: The initial temperature control command is determined based on the aforementioned temperature limit. Acquire feedback signals, including the real-time temperature of the etching stage and the real-time temperature of the temperature control liquid; The temperature control command is determined based on the feedback signal and the initial temperature control command; The circulating temperature control fluid circuit includes a central circuit and an edge circuit. The first temperature control pipeline section of the central circuit located in the central area of ​​the etching workbench is not connected to the second temperature control pipeline section of the edge circuit located in the edge area of ​​the etching workbench. The limiting temperature includes a center limiting temperature and an edge limiting temperature, and the step of determining the initial temperature control command based on the limiting temperature includes: The initial center temperature control command is determined based on the aforementioned center limit temperature; The initial edge temperature control command is determined based on the edge limit temperature. The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

2. The temperature control method for the etching stage according to claim 1, characterized in that, The real-time temperature of the etching stage includes the temperature of the central region and the temperature of the edge region; the real-time temperature of the temperature control fluid includes the first temperature control fluid temperature of the central loop and the second temperature control fluid temperature of the edge loop; the acquisition of feedback signals includes: Obtain a first feedback signal, the first feedback signal including the real-time detected temperature of the central region and the temperature of the first temperature control liquid; Acquire a second feedback signal, the second feedback signal including the real-time detected temperature of the edge region and the temperature of the second temperature control liquid; The feedback signal includes the first feedback signal and the second feedback signal.

3. The temperature control method for the etching stage according to claim 2, characterized in that, The step of determining the temperature control command based on the feedback signal and the initial temperature control command includes: Based on the first feedback signal and the initial center temperature control command, the center temperature control command is determined; The edge temperature control command is determined based on the second feedback signal and the initial edge temperature control command; The temperature control commands include the center temperature control command and the edge temperature control command.

4. A temperature control system for an etching worktable, characterized in that, include: The workbench includes a temperature control liquid circuit, a temperature regulation circuit, an evaporator, and a controller. Both the temperature control liquid circuit and the temperature regulation circuit pass through the evaporator. The temperature control liquid circuit and the temperature regulation circuit are not connected. The controller is electrically connected to both the temperature control liquid circuit and the temperature regulation circuit. The temperature control fluid circuit of the workbench is used to regulate the temperature of the etching workbench. The controller is used to control the temperature regulation loop and adjust the real-time temperature of the temperature control liquid in the worktable temperature control liquid loop through the evaporator so that the target working temperature of the etching worktable is stabilized within a preset range. The temperature control liquid circuit of the workbench includes: a first sensor, a second sensor, a temperature control pipeline section distributed inside the etching workbench, and a transmission pipeline section outside the etching workbench. The first sensor is located in the transmission pipeline section, and the second sensor is located on the etching workbench. The first sensor and the second sensor are electrically connected to the controller. The temperature control pipeline section is used to regulate the temperature of the etching workbench; The first sensor is used to detect the real-time temperature of the temperature control liquid in the transmission pipeline section; The second sensor is used to detect the real-time temperature of the etching stage; The controller is used to control the temperature regulation loop, including: the controller controls the temperature regulation loop according to the limit temperature, the real-time temperature of the temperature control liquid and the real-time temperature of the etching stage; The temperature regulation circuit includes a throttle valve, a compressor, and an evaporator piping section. The input end of the compressor is connected to the output end of the evaporator piping section, the output end of the compressor is connected to the input end of the throttle valve, the output end of the throttle valve is connected to the input end of the evaporator piping section, and the throttle valve is electrically connected to the controller. The compressor is used to drive the flow of the temperature-controlled medium in the temperature regulation circuit; The throttle valve is used to receive temperature control commands from the controller in order to control the flow rate of the temperature-controlled medium; The temperature-controlled medium flowing through the evaporator pipe section transfers heat between the evaporator and the temperature-controlled liquid in the worktable temperature-controlled liquid circuit, so as to stabilize the target working temperature of the etching worktable within a preset range.

5. The workbench temperature control system according to claim 4, characterized in that, The temperature control pipeline includes a first temperature control pipeline and a second temperature control pipeline. The first temperature control pipeline is located in the central area of ​​the etching worktable, and the second temperature control pipeline is located in the edge area of ​​the etching worktable. The first temperature control pipeline and the second temperature control pipeline are not connected within the etching worktable. The second sensor includes a central region sensor and an edge region sensor. The central region sensor is used to detect the real-time temperature of the central region of the etching stage, and the edge region sensor is used to detect the real-time temperature of the edge region of the etching stage. Correspondingly, the controller determines the temperature control command based on the limit temperature, the real-time temperature of the central area, the real-time temperature of the edge area, and the real-time temperature of the temperature control fluid.

6. The workbench temperature control system according to claim 5, characterized in that, A thermal insulation strip is provided between the first temperature-controlled pipe section and the second temperature-controlled pipe section, and the thermal insulation strip is used to isolate heat transfer between the first temperature-controlled pipe section and the second temperature-controlled pipe section.

7. The workbench temperature control system according to claim 5, characterized in that, The workbench temperature control fluid circuit includes a central circuit and an edge circuit, which are independent circuits. The first temperature control pipeline segment is located in the central circuit, and the second temperature control pipeline segment is located in the edge circuit.

8. The workbench temperature control system according to claim 7, characterized in that, The temperature control loop includes a central region temperature control loop and an edge region temperature control loop, and the evaporator includes a central region evaporator and an edge region evaporator.

9. The workbench temperature control system according to any one of claims 4-8, characterized in that, The workbench temperature control liquid circuit also includes a temperature control liquid pump, and the first sensor is used to detect the real-time temperature of the temperature control liquid at the output end of the temperature control liquid pump.

10. A temperature control device for an etching worktable, characterized in that, include: The acquisition module is used to acquire the real-time temperature of the etching worktable and the real-time temperature of the temperature control fluid. The real-time temperature of the etching worktable is the current working temperature of the etching worktable, and the real-time temperature of the temperature control fluid is the current working temperature of the temperature control fluid in the circulating temperature control fluid loop. The processing module is used to determine the temperature control command based on the real-time temperature of the etching workbench, the real-time temperature of the temperature control fluid, and the limit temperature; the circulating temperature control fluid loop responds to the temperature control command and stabilizes the target working temperature of the etching workbench within a preset range; The step of determining the temperature control command based on the real-time temperature of the etching workbench, the real-time temperature of the temperature control liquid, and the limiting temperature includes: The initial temperature control command is determined based on the aforementioned temperature limit. Acquire feedback signals, including the real-time temperature of the etching stage and the real-time temperature of the temperature control liquid; The temperature control command is determined based on the feedback signal and the initial temperature control command; The circulating temperature control fluid circuit includes a central circuit and an edge circuit. The first temperature control pipeline section of the central circuit located in the central area of ​​the etching workbench is not connected to the second temperature control pipeline section of the edge circuit located in the edge area of ​​the etching workbench. The limiting temperature includes a center limiting temperature and an edge limiting temperature, and the step of determining the initial temperature control command based on the limiting temperature includes: The initial center temperature control command is determined based on the aforementioned center limit temperature; The initial edge temperature control command is determined based on the edge limit temperature. The initial temperature control command includes the initial center temperature control command and the initial edge temperature control command.

11. An electronic device, characterized in that, include: processor; as well as, Memory for storing the executable instructions of the processor; The processor is configured to execute the temperature control method of the etching stage according to any one of claims 1 to 3 by executing the executable instructions.

12. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the temperature control method for the etching stage according to any one of claims 1 to 3.

Images