A surface stripping and cleaning process for parts in a dry etching device in semiconductor equipment

Abstract

The present invention discloses a surface stripping and cleaning process for parts in a dry etching device in semiconductor equipment. Under the premise of not affecting the function of a quartz carrier, machining is used to strip and remove the surface, and at the same time, sandblasting, grinding and other steps are combined to effectively restore the quartz carrier to its original state. Compared with a pure cleaning and removal process, the flatness of the quartz carrier surface can be improved, the sealing is better, the etching rate of the dry etching can be better controlled, and the cleanliness level can be effectively controlled in combination with the cleaning of the quartz carrier surface, which can also greatly save the equipment usage cost for customers.

Description

Technical Field

[0001] The invention belongs to the technical field of cleaning and renovation, and in particular relates to a surface stripping and cleaning process for parts in a dry etching device in semiconductor equipment. Background Art

[0002] The quartz carrier is located inside the dry etcher chamber. When the dry etcher is operating, the gas inside the chamber is ionized into ions, bombarding the wafer surface to achieve the etching effect. Throughout the operation, the quartz carrier surface is subjected to physical bombardment and varying degrees of chemical reaction, which in turn causes varying degrees of damage to the quartz carrier surface and damages its flatness, affecting the ion etching rate of the wafer. Over time, in addition to increasing damage to the quartz carrier, contaminants will also adhere to its surface, posing certain risks during the etching process. Therefore, the quartz carrier needs to be replaced regularly, but this is expensive, and the cost of each replacement is extremely high. Summary of the Invention

[0003] The present invention aims to provide a surface stripping and cleaning process for parts in a dry etching device in a semiconductor device. By removing surface contaminants and cleaning the surface of a quartz carrier, the quartz carrier can be refurbished so that the quartz carrier can be recycled multiple times, greatly reducing the cost of equipment use.

[0004] To achieve the above objectives, the technical solution of the present application is: a surface stripping and cleaning process for parts in a dry etching device in a semiconductor device, comprising:

[0005] Quartz carrier receiving: Check the quartz carrier to confirm whether there are scratches or chipped corners, take photos of the entire and local positions of the quartz carrier, and collect its incoming material information;

[0006] Confirmation of incoming material dimensions: Use CMM equipment and roughness tester to measure and record the thickness, inner diameter, outer diameter, sealing surface width, and roughness data of the quartz carrier, and collect the incoming material dimensions of the quartz carrier;

[0007] Machining and cutting: peeling off the surface of the quartz carrier, setting machining parameters by detecting the size of the incoming material, placing the quartz carrier on the carrier and adjusting it to the zero position, and then machining;

[0008] Degreasing treatment: Soak a sponge in pure water and use cleaning powder to wipe the front and back of the quartz carrier;

[0009] Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun;

[0010] Boiling and cleaning: The quartz carrier is boiled and cleaned with a ratio of cleaning powder to water of 1.5g:1L;

[0011] Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun;

[0012] Appearance confirmation after processing: Use CMM equipment to measure and record the appearance, thickness, inner diameter, outer diameter, and sealing surface width of the quartz carrier. If there are still pits on the surface, return to the machining and cutting steps and cut again until there are no pits on the surface that meet the requirements.

[0013] Furthermore, a surface stripping and cleaning process for parts in a dry etching device in a semiconductor device further includes:

[0014] Sealing surface protection: Use tape to sandblast all sealing surfaces of the quartz carrier;

[0015] Sandblasting: Sandblast the surface of the quartz carrier to make its roughness meet the requirements;

[0016] Roughness measurement: Measure and record the roughness of the sandblasted surface of the quartz carrier. If the roughness does not meet the requirements, adjust the pressure of the sandblasting machine and sandblast the quartz carrier again until the roughness meets the requirements.

[0017] Sealing surface grinding: Use a grinding machine to grind the sealing surface of the quartz carrier;

[0018] Sealing surface roughness measurement: Measure and record the roughness of the quartz carrier sealing surface. If the roughness does not meet the requirements, continue grinding until it meets the requirements.

[0019] Sealing surface protection: Use acid and alkali resistant tape to protect the sealing surface.

[0020] Furthermore, a surface stripping and cleaning process for parts in a dry etching device in a semiconductor device further includes:

[0021] Mixed acid soaking: Prepare a mixed acid solution and add the following acids in the following order: acetic acid, nitric acid, and hydrofluoric acid. Soak the quartz carrier for 20 seconds to remove any residual substances on the surface of the quartz carrier.

[0022] Rinse and rinse: Rinse the quartz carrier for 10 seconds and rinse for 2 minutes to remove the acidic solution remaining on the surface;

[0023] Alkali neutralization: Prepare potassium hydroxide solution and soak the quartz carrier for 2 minutes to remove the residual substances and residual acid on the surface of the quartz carrier;

[0024] Rinse + rinse + blow dry: Use pure water to rinse the alkaline solution remaining on the surface of the quartz carrier for 20 seconds, rinse for 2 minutes, and blow dry;

[0025] Ultrasonic cleaning: Move the quartz carrier into a clean room and use ultrasonic cleaning equipment to perform ultrasonic treatment on the quartz carrier;

[0026] Rinse + blow dry: Use pure water to rinse the residual substances on the surface of the quartz carrier for 2 minutes and blow dry;

[0027] Oven drying: Place the quartz carrier in the oven, set the oven temperature to 135°C, and dry for 2 hours;

[0028] Appearance inspection: Conduct a comprehensive and detailed inspection of the appearance of the quartz carrier to confirm whether there is any dirt, scratches, or chipping;

[0029] Particle measurement: Use a particle detection instrument to measure the particle count on the surface of the component. The range is: Particle (≥0.3um) <0.077ea / cm 2 .

[0030] Packaging: The quartz carrier will be wrapped in two layers of vacuum packaging, with the inner layer being nylon and the outer layer being PE;

[0031] Shipping preparation and inspection: Check whether the packaging has any leaks, whether the box is clean, and whether the project form is complete.

[0032] Furthermore, the specific implementation of the machining cutting is as follows:

[0033] First, adjust the spindle of the machining equipment back to the zero position, call the No. 3 tool of the machining equipment, replace the No. 3 tool on the spindle, and then move it to just above the outer sealing surface. Rotate the spindle forward at a speed of 4000 rpm and turn on the cutting fluid. Gradually move the tool down to the position of the outer sealing surface. When the tool drops 0.02mm below the outer sealing surface, set the spindle to make a circle with a radius of -228.6mm and rotate forward 2 times. After completion, raise the tool 50mm. At this point, the cutting of the outer sealing surface is completed.

[0034] Move the tool to the top of the inner sealing surface, and gradually move the tool down to the inner sealing surface. When the tool is 0.04mm below the inner sealing surface, set the spindle to make a circle with a radius of -82.55mm and rotate it in the positive direction for 2 circles. After completion, raise the tool 50mm, and repeat the above steps to move the tool to the other three inner sealing surfaces to make circles. The cutting of the inner sealing surface is now completed.

[0035] Move the tool to the position just above the edge of the working surface close to the inner sealing surface, and gradually move the tool down slowly toward the inner sealing surface. When the tool drops 0.06mm below the inner sealing surface, set the spindle to make a circle with a radius of -76.2mm and rotate forward 1 circle, move the tool 50mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -26mm and rotate forward 1 circle, move the tool 20mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -12.5mm and rotate forward 1 circle, thus completing the cutting process of one working surface. After completion, raise the tool 50mm, repeat the above actions and move the tool to the other three working surfaces to make circles to complete the cutting of the inner sealing surface; stop the spindle, turn off the cutting fluid, and adjust the spindle to the zero position, thus completing the entire cutting process.

[0036] By adopting the above technical solution, the present invention can achieve the following technical effects:

[0037] 1. The machining equipment used in the present invention is manufactured by Mazak, and the tool it is equipped with is made of diamond material, with a diameter of 3 feet, and the accuracy of the peeling size can be controlled within 0.03mm;

[0038] 2. The present invention cuts the sealing surface and the working surface separately by rotating the main shaft, and will not cause edge collapse and corner chipping on the quartz carrier;

[0039] 3. The ratio of cleaning powder and water selected in the present invention can effectively remove the grease remaining on the surface of the quartz carrier;

[0040] 4. The present invention selects white corundum #400 used in the sandblasting machine to control the roughness of the quartz carrier surface to less than 1 micron;

[0041] 5. The present invention uses a grinding machine to grind the sealing surface of the quartz carrier, which can control the roughness of the sealing surface to below 0.1 microns, effectively controlling the sealing of the quartz carrier to ensure that there is no air pressure leakage during the equipment operation;

[0042] 6. The present invention can effectively control the cleanliness process of the quartz carrier surface through the steps of acid washing, alkali washing, neutralization, ultrasonic cleaning, drying, particle detection, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 Schematic diagram of the quartz carrier structure;

[0044] Figure 2 Roadmap for cutting a quartz carrier for machining.

[0045] Explanation of the serial numbers in the figure: 1. Working surface; 2. Inner sealing surface; 3. Outer sealing surface. DETAILED DESCRIPTION

[0046] The embodiments of the present invention are implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operation processes are given, but the protection scope of the present invention is not limited to the following embodiments.

[0047] Example 1

[0048] As semiconductor chips become increasingly sophisticated, stable etching becomes crucial to chip manufacturing. Therefore, the development of a surface stripping and cleaning process for quartz carriers can significantly reduce costs. By removing and cleaning the surface of the quartz carrier, the carrier is refurbished, allowing it to be reused multiple times. This improves equipment etch rate instability, increases chip manufacturing yield, and significantly reduces equipment costs, helping semiconductor manufacturers maintain efficient production.

[0049] Without affecting the function of the quartz carrier, this application uses Mazak equipment to machine and remove the surface of the quartz carrier. Combined with the processing of the sealing surface by a grinder, the processing of the working surface by a sandblaster, and the cleaning of the entire quartz carrier, the various parameters of the quartz carrier are adjusted to the range required by the customer, while ensuring that the etching rate and particle range can be effectively controlled during the customer's use. The specific implementation process is as follows:

[0050] A surface stripping and cleaning process for parts in a dry etching device in a semiconductor device, comprising:

[0051] Quartz carrier receiving: Check the quartz carrier to confirm whether there are scratches or chipped corners, take photos of the entire and local positions of the quartz carrier, and collect its incoming material information;

[0052] Confirmation of incoming material dimensions: Use CMM equipment and roughness tester to measure and record the thickness, inner diameter, outer diameter, sealing surface width, roughness and other data of the quartz carrier, and collect the incoming material dimensions of the quartz carrier;

[0053] Machining and cutting: peeling off the surface of the quartz carrier, setting machining parameters by detecting the size of the incoming material, placing the quartz carrier on the carrier and adjusting it to the zero position, and then machining;

[0054] Degreasing: Soak a sponge in pure water and use cleaning powder to wipe the front and back of the quartz carrier. This step is to remove the residual grease on the surface of the quartz carrier.

[0055] Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun;

[0056] Boiling and cleaning: The quartz carrier is boiled and cleaned with a ratio of cleaning powder to water of 1.5g:1L;

[0057] Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun;

[0058] Appearance confirmation after processing: Use CMM equipment to measure and record the appearance, thickness, inner diameter, outer diameter, sealing surface width and other data of the quartz carrier. If there are still pits on the surface, return to the machining and cutting steps and cut again until there are no pits on the surface and it meets the requirements.

[0059] Sealing surface protection: Use 484 yellow tape to sandblast all sealing surfaces of the quartz carrier;

[0060] Sand blasting: Use 400# white corundum as the sand material, and adjust the pressure of the sand blasting machine to 0.3MPA to sandblast the surface of the quartz carrier to make the surface roughness of the quartz carrier meet the requirements;

[0061] Roughness measurement: Measure and record the roughness of the sandblasted surface of the quartz carrier. If the roughness does not meet the requirements, adjust the pressure of the sandblasting machine and sandblast the quartz carrier again until the roughness meets the requirements.

[0062] Sealing surface grinding: Use a grinding machine to grind the sealing surface of the quartz carrier, with a grinding liquid flow rate of 60ml / min, a water flow rate of 26ml / min, and a downward pressure of 76DAN;

[0063] Sealing surface roughness measurement: Measure and record the roughness of the quartz carrier sealing surface. If the roughness does not meet the requirements, continue grinding until it meets the requirements.

[0064] Sealing surface protection: Use acid and alkali resistant tape to protect the sealing surface.

[0065] Mixed acid soaking: Prepare a mixed acid solution (HNO3:HF:HAc=8:1:1) and add acid in the following order: acetic acid, nitric acid, and hydrofluoric acid. Soak the quartz carrier for 20 seconds to remove any residual substances on the surface of the quartz carrier.

[0066] Rinse and rinse: Rinse the quartz carrier for 10 seconds and rinse for 2 minutes to remove the acidic solution remaining on the surface;

[0067] Alkali neutralization: Prepare potassium hydroxide solution (KOH:H20=10:1) and soak the quartz carrier for 2 minutes to remove the residual substances and residual acid on the surface of the quartz carrier;

[0068] Rinse + rinse + blow dry: Use pure water to rinse the alkaline solution remaining on the surface of the quartz carrier for 20 seconds, rinse for 2 minutes, and blow dry;

[0069] Ultrasonic cleaning: Move the quartz carrier into a Class 1000 clearance room and use ultrasonic cleaning equipment to perform ultrasonic treatment on the quartz carrier. The ultrasonic cleaning parameters are: power 10+ / -3w / inch 2 , ultrasonic frequency is 40KHz, water temperature is 25℃, and ultrasonic time is 30min;

[0070] Rinse + blow dry: Use pure water to rinse the residual substances on the surface of the quartz carrier for 2 minutes and blow dry;

[0071] Oven drying: Place the quartz carrier in the oven, set the oven temperature to 135°C, and dry for 2 hours;

[0072] Appearance inspection: Conduct a comprehensive and detailed inspection of the appearance of the quartz carrier to confirm whether there are any dirt, scratches, chipped corners, etc.

[0073] Particle measurement: Use a particle detection instrument to measure the particle count on the surface of the component. The range is: Particle (≥0.3um) <0.077ea / cm 2 .

[0074] Packaging: The quartz carrier will be wrapped in two layers of vacuum packaging, with the inner layer being nylon and the outer layer being PE;

[0075] Shipping preparation and inspection: Check whether the packaging has any leaks, whether the box is clean, and whether the project form is complete.

[0076] Furthermore, the machining equipment manufacturer is Mazak, and the tool it is equipped with is made of diamond material with a diameter of 3 feet, and the accuracy of the removal size can be controlled within 0.01mm.

[0077] Example 2

[0078] This embodiment introduces the specific implementation method of machining cutting:

[0079] First, adjust the spindle of the machining equipment back to the zero position, call the No. 3 tool of the machining equipment (this tool is a 500-mesh forming tool), replace the No. 3 tool on the spindle, and then move it to just above the outer sealing surface. Rotate the spindle forward at a speed of 4000 revolutions per minute and turn on the cutting fluid. Gradually move the tool down to the position of the outer sealing surface. When the tool drops 0.02mm below the outer sealing surface, set the spindle to make a circle with a radius of -228.6mm and rotate forward 2 times. After completion, raise the tool 50mm. At this point, the cutting of the outer sealing surface is completed.

[0080] Move the tool to the top of the inner sealing surface, and gradually move the tool down to the inner sealing surface. When the tool is 0.04mm below the inner sealing surface, set the spindle to make a circle with a radius of -82.55mm and rotate it in the positive direction for 2 circles. After completion, raise the tool 50mm, and repeat the above steps to move the tool to the other three inner sealing surfaces to make circles. The cutting of the inner sealing surface is now completed.

[0081] Move the tool to the position just above the edge of the working surface close to the inner sealing surface, and gradually move the tool down slowly toward the inner sealing surface. When the tool drops 0.06mm below the inner sealing surface, set the spindle to make a circle with a radius of -76.2mm and rotate forward 1 circle, move the tool 50mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -26mm and rotate forward 1 circle, move the tool 20mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -12.5mm and rotate forward 1 circle, thus completing the cutting process of one working surface. After completion, raise the tool 50mm, repeat the above actions and move the tool to the other three working surfaces to make circles to complete the cutting of the inner sealing surface; stop the spindle, turn off the cutting fluid, and adjust the spindle to the zero position, thus completing the entire cutting process.

[0082] This application uses machining to remove the surface and combines sandblasting, grinding and other steps to effectively restore the quartz carrier to its original state. Compared with the pure cleaning and removal process, it can ensure that the flatness of the quartz carrier surface is better, the sealing is better, and the etching rate of dry etching can be better controlled. At the same time, combined with the cleaning of the quartz carrier surface, the cleanliness level can be effectively controlled. Therefore, this solution is more in line with process requirements and can also greatly save equipment usage costs for customers.

[0083] The foregoing descriptions of specific exemplary embodiments of the present invention are for purposes of illustration and description. These descriptions are not intended to limit the invention to the precise forms disclosed, and it is apparent that many variations and modifications are possible in light of the foregoing teachings. The exemplary embodiments have been selected and described for the purpose of explaining the specific principles of the invention and their practical application, thereby enabling those skilled in the art to realize and utilize a variety of exemplary embodiments of the invention and various options and modifications. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A surface stripping and cleaning process for parts in a dry etching device in a semiconductor device, characterized in that: include: Quartz carrier receiving: Check the quartz carrier to confirm whether there are scratches or chipped corners, take photos of the entire and local positions of the quartz carrier, and collect its incoming material information; Confirmation of incoming material dimensions: Use CMM equipment and roughness tester to measure and record the thickness, inner diameter, outer diameter, sealing surface width, and roughness data of the quartz carrier, and collect the incoming material dimensions of the quartz carrier; Machining and cutting: peeling off the surface of the quartz carrier, setting machining parameters by detecting the size of the incoming material, placing the quartz carrier on the carrier and adjusting it to the zero position, and then machining; Degreasing treatment: Soak a sponge in pure water and use cleaning powder to wipe the front and back of the quartz carrier; Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun; Boiling and cleaning: Boiling and cleaning the quartz carrier; Rinse with pure water and blow dry: Rinse the quartz carrier with pure water and blow dry with an air gun; Appearance confirmation after processing: Use CMM equipment to measure and record the appearance, thickness, inner diameter, outer diameter, and sealing surface width of the quartz carrier. If there are still pits on the surface, return to the machining and cutting steps and cut again until there are no pits on the surface and it meets the requirements; Sealing surface protection: Use tape to sandblast all sealing surfaces of the quartz carrier; Sandblasting: Sandblast the surface of the quartz carrier to make its roughness meet the requirements; Roughness measurement: Measure and record the roughness of the sandblasted surface of the quartz carrier. If the roughness does not meet the requirements, adjust the pressure of the sandblasting machine and sandblast the quartz carrier again until the roughness meets the requirements. Sealing surface grinding: Use a grinding machine to grind the sealing surface of the quartz carrier; Sealing surface roughness measurement: Measure and record the roughness of the quartz carrier sealing surface. If the roughness does not meet the requirements, continue grinding until it meets the requirements. Sealing surface protection: Use acid and alkali resistant tape to protect the sealing surface; Mixed acid soaking: Prepare a mixed acid solution and soak the quartz carrier for 20 seconds to remove the residual substances on the surface of the quartz carrier; Rinse and rinse: Rinse the quartz carrier for 10 seconds and rinse for 2 minutes to remove the acidic solution remaining on the surface; Alkali neutralization: Prepare potassium hydroxide solution and soak the quartz carrier for 2 minutes to remove the residual substances and residual acid on the surface of the quartz carrier; Rinse + rinse + blow dry: Use pure water to rinse the alkaline solution remaining on the surface of the quartz carrier for 20 seconds, rinse for 2 minutes, and blow dry; Ultrasonic cleaning: Move the quartz carrier into a clean room and use ultrasonic cleaning equipment to perform ultrasonic treatment on the quartz carrier; Rinse + blow dry: Use pure water to rinse the residual substances on the surface of the quartz carrier for 2 minutes and blow dry; Oven drying: Place the quartz carrier in the oven; Appearance inspection: Conduct a comprehensive and detailed inspection of the appearance of the quartz carrier to confirm whether there is any dirt, scratches, or chipping; Particle measurement: Use a particle detection instrument to measure the particle count on the surface of the component. The range is: Particle ≥ 0.3um and Particle < 0.077ea / cm 2 ; Packaging: The quartz carrier will be wrapped in two layers of vacuum packaging, with the inner layer being nylon and the outer layer being PE; Shipping preparation and inspection: Check whether the packaging has any air leaks, whether the box is clean, and whether the project form is complete; The specific implementation of the machining cutting is: First, adjust the spindle of the machining equipment back to the zero position, call the No. 3 tool of the machining equipment, replace the No. 3 tool on the spindle, and then move it to just above the outer sealing surface. Rotate the spindle forward at a speed of 4000 rpm and turn on the cutting fluid. Gradually move the tool down to the position of the outer sealing surface. When the tool drops 0.02mm below the outer sealing surface, set the spindle to make a circle with a radius of -228.6mm and rotate forward 2 times. After completion, raise the tool 50mm. At this point, the cutting of the outer sealing surface is completed. Move the tool to the top of the inner sealing surface, and gradually move the tool down to the inner sealing surface. When the tool is 0.04mm below the inner sealing surface, set the spindle to make a circle with a radius of -82.55mm and rotate it in the positive direction for 2 circles. After completion, raise the tool 50mm and repeat. The above actions move the cutter to the other three inner sealing surfaces to make circles, thus completing the cutting of the inner sealing surface; Move the tool to the position just above the edge of the working surface close to the inner sealing surface, and gradually move the tool down slowly toward the inner sealing surface. When the tool drops 0.06mm below the inner sealing surface, set the spindle to make a circle with a radius of -76.2mm and rotate forward 1 circle, move the tool 50mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -26mm and rotate forward 1 circle, move the tool 20mm toward the inner circle of the quartz carrier, set the spindle to make a circle with a radius of -12.5mm and rotate forward 1 circle, thus completing the cutting process of one working surface. After completion, raise the tool 50mm, repeat the above actions and move the tool to the other three working surfaces to make circles to complete the cutting of the inner sealing surface; stop the spindle, turn off the cutting fluid, and adjust the spindle to the zero position, thus completing the entire cutting process.

2. The surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: The ratio of cleaning powder to water in the boiling and cleaning step is 1.5g:1L.

3. The surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: The sand material used in the sand blasting step is 400 mesh and the pressure is 0.3 MPa.

4. The surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: The mixed acid solution prepared in the mixed acid soaking step is HNO3:HF:HAc=8:1:1, and the order of adding acid is as follows: acetic acid, nitric acid, and hydrofluoric acid.

5. The surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: The alkali used in the alkali neutralization step is potassium hydroxide solution with a ratio of KOH:H20=10:

1.

6. The surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: Ultrasonic cleaning parameters: power 7-13w / inch 2 , ultrasonic frequency 40KHz, water temperature 25℃, and ultrasonic time 30min.

7. A surface stripping and cleaning process for parts in a dry etching device in a semiconductor device according to claim 1, characterized in that: The oven temperature of the oven drying step was set to 135°C and the drying time was 2 h.

Images