A medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains

Abstract

The present invention discloses a semiconductor thermoelectric conversion module that can use semiconductors to achieve direct thermoelectric conversion under medium and high temperature conditions. Its structure includes a heat-conducting substrate, a current-carrying sheet, a thin-film integrated grain, a grain locator, and an adiabatic filling medium, etc. In the selection of materials for each component, the structural design, and the processing technology of the present invention, the requirements for thermoelectric conversion efficiency, effective temperature transfer, resistance to thermal shock, and reliability of operation at medium and high temperatures are taken into account. It has been proven by practice that this semiconductor thermoelectric conversion module can achieve high-efficiency direct thermoelectric conversion under medium and high temperature conditions and can ensure stable operation during large temperature fluctuations.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor power generation technology, and particularly relates to a medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains. Background Art

[0002] A semiconductor thermoelectric conversion module can achieve static direct conversion between thermal energy and electrical energy. In our modern life, from industrial production and transportation to daily life, a large amount of energy is consumed every day, but this energy is not fully utilized. During the energy utilization process, a part of the energy fails to be utilized and is dissipated as heat. The semiconductor thermoelectric conversion module can utilize this part of the energy through thermoelectric conversion.

[0003] For example, the utility model (CN201584931U) discloses a low-temperature semiconductor power generation device for recovering waste heat from medium and small-sized industrial equipment. It comprises a heat collection device, a thermoelectric generator, and a heat dissipation and cooling system, and is characterized in that: the thermoelectric generator adopts a plurality of high-performance P / N type bismuth telluride-based thermoelectric conversion elements, which are rectangular thin sheet structures. A plurality of thermoelectric conversion elements are connected in series, and a ceramic sheet is placed and clamped at the top and bottom respectively. A heat-conducting silica gel sheet is adhered to the top ceramic sheet. The thermoelectric conversion elements are connected through aluminum electrodes, and a porous polymer seal is filled in the connected thermoelectric conversion element matrix. The advantage of this utility model is that it can recover the low-temperature waste heat of medium and small-sized equipment with a heat source temperature near 100°C, enabling it to be reused, thereby reducing energy consumption. However, due to the use of bismuth telluride-based thermoelectric conversion elements and without considering the deformation and stress of each component during the high and low temperature conversion process, it cannot be used at a relatively high temperature (300°C - 500°C).

[0004] The invention patent (CN107248824A) discloses a stacked thermal - energy - to - electrical - energy conversion module and its power generation device. The device includes a cold end, a hot end, a cold - end heat - conducting layer connected to the cold end, and a hot - end heat - conducting layer connected to the hot end; both the cold - end heat - conducting layer and the hot - end heat - conducting layer are more than one layer, and they are partially alternately stacked opposite to each other; between the stacking positions of each layer of the cold - end heat - conducting layer and the hot - end heat - conducting layer, semiconductor thermoelectric elements are arranged. One side of the semiconductor thermoelectric element contacts the cold - end heat - conducting layer, and the other side contacts the hot - end heat - conducting layer; the lead - out ends of the semiconductor thermoelectric elements are connected to a circuit. There is provided a stacked thermal - energy - to - electrical - energy conversion module and its power generation device with a large power generation and refrigeration capacity, which can be combined in multiple units to form an extra - large unit, small volume, large power density, low production and installation costs, and the cold end and the hot end are not restricted by distance, creating feasible technical support for the application of thermoelectric power generation and refrigeration in industry and life. However, the application target of this device is a refrigeration system, and the design is based on the packaging principle of a semiconductor refrigeration module. In the selection of its components and the structural design, the deformation and stress of each component during the high - and low - temperature conversion process are not considered either. Therefore, it cannot be used at relatively high temperatures (300 °C - 500 °C).

[0005] The invention patent (CN104508846A) discloses a thermoelectric conversion module. It adopts a P - type thermoelectric conversion part and an N - type thermoelectric conversion part. Combining with the attached drawings, it can be seen that the thermoelectric conversion part is a conventional homogeneous crystal grain, rather than the thin - film integrated crystal grain of the present invention.

[0006] The invention patent (CN108028306A) discloses a thermoelectric conversion module and a thermoelectric conversion device. It adopts a P - type thermoelectric conversion element and an N - type thermoelectric conversion element. As the materials of the P - type thermoelectric conversion element 3 and the N - type thermoelectric conversion element 4, silicide - based materials, oxide - based materials, skutterudite, half - Heusler, etc. can be used. Manganese silicide (MnSi 1.73 ) becomes the P - type thermoelectric conversion element 3, and magnesium silicide (Mg 2 Si) becomes the N - type thermoelectric conversion element 4. Combining with the attached drawings, it can be seen that the thermoelectric conversion element is a conventional homogeneous crystal grain, rather than the thin - film integrated crystal grain of the present invention. Summary of the Invention

[0007] The object of the present invention is to overcome the above - mentioned shortcomings of the prior art, and provide a semiconductor thermoelectric conversion module that takes into account the requirements of thermoelectric conversion efficiency, effective temperature transfer, resistance to thermal shock, reliability in medium - and high - temperature operation, etc. in the selection of component materials, structural design, and processing technology, and can achieve efficient and stable direct thermoelectric conversion under medium - and high - temperature conditions.

[0008] The present invention is realized through the following technical solutions:

[0009] The present invention mainly consists of a heat-conducting substrate, a flow guide sheet, a thin-film integrated crystal grain, a crystal grain locator, an adiabatic filling medium, etc.

[0010] Among them, the external elastic heat-conducting layer material on the outer side of the heat-conducting substrate is graphene or carbon nanotubes, preferably with a thickness of 10 microns; the ceramic substrate material on the inner side is aluminum nitride ceramic, alumina ceramic or silicon nitride ceramic, preferably aluminum nitride ceramic, with a preferred thickness of 300 microns and a preferred outer dimension of 60×60 mm; the flow guide sheet is located on the inner side of the heat-conducting substrate, and from the outside to the inside, it is successively a metal substrate, an internal elastic heat-conducting (flow) layer and a metal deposition layer A. Among them, the metal substrate material is a single substance or alloy such as copper, stainless steel, iron, aluminum, etc., preferably stainless steel, with a preferred outer dimension of 4 mm (width)×7 mm (length)×0.3 mm (thickness), the internal elastic heat-conducting (flow) layer material is graphene or carbon nanotubes, preferably with a thickness of 10 microns, and the metal deposition layer A material is gold or platinum, with a thickness of 0.1-2 microns, preferably a thickness of 0.3 microns; the thin-film integrated crystal grain is located on the inner side of the flow guide sheet and is formed by laminating and diffusely connecting a semiconductor thin film and an insulating dielectric layer. Its circumferential periphery is a radiation-reducing coating, and the upper and lower surfaces are metal deposition layers B. Among them, the semiconductor thin film material is lead telluride, bismuth telluride, silicon-germanium alloy, skutterudite, etc., and is made into P-type or N-type through a component doping process, with each layer thickness of 200 nm-10000 nm, preferably 1000 nm; the insulating dielectric layer material is alumina, aluminum nitride, silicon dioxide, titanium oxide, etc., preferably silicon dioxide, with each layer thickness of 10-1000 nm, preferably 200 nm; the radiation-reducing coating material is gold foil or silver foil, with a thickness of 100 nm-200 nm; the metal deposition layer B material is gold or platinum, with a thickness of 0.1-2 microns, preferably a thickness of 0.3 microns; the crystal grain locator is processed into a frame using mica with good heat insulation to provide positioning for the thin-film integrated crystal grain in the horizontal direction; the adiabatic filling medium material is an aerosol adiabatic medium, which is used to fill all the voids inside the module to achieve the protection and positioning of the internal structure.

[0011] Further, the external elastic heat-conducting layer material is graphene or carbon nanotubes, with a thickness of 10 microns, and the ceramic substrate material on the inner side is aluminum nitride ceramic, alumina ceramic or silicon nitride ceramic.

[0012] Further, the external elastic heat-conducting layer has a thickness of 10 microns, and the inner ceramic substrate has a thickness of 300 microns and an outer dimension of 60×60 mm.

[0013] Further, the metal substrate material is copper, stainless steel, iron, aluminum or alloy; the internal elastic heat-conducting layer (2-2) material is graphene or carbon nanotubes; the metal deposition layer A material is gold or platinum.

[0014] Further, the outer dimensions of the metal substrate are 4 mm (width) × 7 mm (length) × 0.3 mm (thickness), the thickness of the internal elastic heat-conducting layer is 10 μm; the thickness of the metal deposition layer A is 0.1 - 2 μm.

[0015] Further, the thin-film integrated crystal grains (3) are formed by laminating and diffusion-connecting a semiconductor thin film and an insulating dielectric layer. Its outer periphery is a radiation-reducing coating, and the upper and lower surfaces are metal deposition layer B. The semiconductor thin film material is lead telluride, bismuth telluride, silicon-germanium alloy, skutterudite, and is made into P-type or N-type through component doping technology. The insulating dielectric layer material is alumina, aluminum nitride, silicon dioxide, titanium oxide; the radiation-reducing coating material is gold foil or silver foil; the metal deposition layer B material is gold or platinum.

[0016] Further, the thickness of each layer of the semiconductor thin film is 200 nm - 10000 nm, the thickness of each layer of the insulating dielectric layer is 10 - 1000 nm; the thickness of the radiation-reducing coating is 100 nm - 200 nm; the thickness of the metal deposition layer B is 0.1 - 2 μm.

[0017] Further, the crystal grain locator (4) is processed into a frame using mica with good heat insulation.

[0018] Further, the material of the heat-insulating filling medium (5) is an aerosol heat-insulating medium.

[0019] Further, the height of the crystal grain locator (4) is less than the height of the thin-film integrated crystal grains (3). The thin-film integrated crystal grains (3) are sequentially inserted into the spaces of the crystal grain locator (4). The crystal grains in adjacent spaces are one N-type and one P-type, so that each current-carrying sheet (2) is connected to one N-type thin-film integrated crystal grain (3) and one P-type thin-film integrated crystal grain (3).

[0020] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0021] The grains of the present invention are thin-film integrated grains, which are blocky grains formed by laminating and connecting thermoelectric semiconductor thin films in parallel. Compared with conventional homogeneous grains, the grain orientation of the present invention is greatly improved, and the defects existing in the grains are reduced, thereby effectively improving the overall thermoelectric conversion efficiency of the present invention; a radiation-reducing coating is provided on the outer periphery of the thin-film integrated grains of the present invention, which can effectively reduce the heat dissipation in the horizontal direction, ensure the temperature difference between the hot side and the cold side of the thin-film integrated grains, and improve the overall thermoelectric conversion efficiency of the present invention; elastic heat-conducting (flow) layers with a certain thickness are provided between the current-carrying sheets and the thin-film integrated grains and on the outer side of the heat-conducting substrate. While ensuring efficient heat conduction and electricity conduction, it can effectively compensate for the deformation of each component caused by thermal and cold shocks during welding and operation under medium and high temperature conditions, and release the thermal stress inside and outside the module in a timely and effective manner to ensure stable performance during the operation of the module; the heat-conducting substrate of the present invention is cut from a ceramic plate with good flatness, high strength, strong heat-conducting ability and good insulation performance, which can effectively transfer the temperatures of the hot and cold sides to the thin-film integrated grains while ensuring the external dimensions, shape and insulation; the current-carrying sheets of the present invention are single metals or alloys with excellent electrical and heat-conducting properties, and the current-carrying sheets are connected to the ceramic substrate by welding or vapor deposition, which can ensure that there is no contact thermal resistance between the current-carrying sheets and the ceramic substrate, thereby effectively transferring the temperatures of the hot and cold sides to the thin-film integrated grains; metal deposition layers are formed in advance on the contact surfaces to be contacted between the current-carrying sheets and the thin-film integrated grains by vapor deposition, and then an instantaneous diffusion welding process is used for connection, which ensures the connection strength between the two and avoids the existence of contact thermal resistance; the grain locator of the present invention is processed from mica with good heat insulation properties, which can effectively reduce the side flow of heat while realizing the pre-positioning of the thin-film integrated grains and ensure the temperature difference between the two sides of the thin-film integrated grains during operation; an aerosol is filled into the internal voids of the module under vacuum conditions to form an adiabatic filling medium, which can protect and position the internal structure while ensuring the temperature difference between the two sides of the thin-film integrated grains during operation.

[0022] In the selection of materials, structural design and processing technology of each component of the present invention, the requirements of thermoelectric conversion efficiency, effective temperature transfer, resistance to thermal and cold shocks, reliability in medium and high temperature operation, etc. are taken into account; the use of thin-film integrated grains ensures a high thermoelectric conversion efficiency; the use of elastic heat-conducting (flow) layers effectively releases the thermal stress inside and outside the module to ensure stable performance during the operation of the module; the use of vapor deposition or diffusion welding technology between the heat-conducting substrate, the current-carrying sheets and the thin-film integrated grains avoids contact thermal resistance and ensures the effective transfer of the temperatures of the hot and cold sides to the thin-film integrated grains; the grain locator and the adiabatic filling medium protect and position the internal structure while ensuring the temperature difference between the two sides of the thin-film integrated grains during operation. The present invention is very suitable for realizing efficient and stable direct thermoelectric conversion under medium and high temperature conditions. Description of the Drawings

[0023] To more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other relevant drawings can also be obtained based on these drawings. In the drawings:

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0025] As Figure 1 shown, 1 is a heat-conducting substrate, 2 is a flow guide piece, 3 is a thin-film integrated chip, 4 is a chip locator, and 5 is an adiabatic filling medium;

[0026] As the partial enlargement Figure 1 -A shows, 1-1 is an external elastic heat-conducting layer, 1-2 is a ceramic substrate, 2-1 is a metal substrate, 2-2 is an internal elastic heat-conducting (flow) layer, and 2-3 is a metal deposition layer A;

[0027] As the partial enlargement Figure 1 -B shows, 2-3 is a metal deposition layer, 3-1 is a semiconductor thin film, 3-2 is an insulating dielectric layer, 3-3 is an anti-radiation coating, and 3-4 is a metal deposition layer B. Specific embodiments

[0028] To make the purpose, technical solutions and advantages of the present invention clearer and more understandable, the following will further elaborate on the present invention in combination with embodiments and drawings. The illustrative embodiments of the present invention and their descriptions are only used to explain the present invention and do not serve as a limitation to the present invention.

[0029] Embodiment 1

[0030] Please refer to Figure 1 , this Embodiment 1 mainly consists of a heat-conducting substrate 1, a flow guide piece 2, a thin-film integrated chip 3, a chip locator 4, an adiabatic filling medium 5, etc.

[0031] Among them, the material of the external elastic heat-conducting layer 1-1 outside the heat-conducting substrate 1 is graphene or carbon nanotubes, and the preferred thickness is 10 microns; the material of the inner ceramic substrate 1-2 is aluminum nitride ceramic, alumina ceramic or silicon nitride ceramic, preferably aluminum nitride ceramic, the preferred thickness is 300 microns, and the outer dimension is preferably 60×60 mm;

[0032] The flow guide piece 2 is located inside the heat-conducting substrate 1. From the outside to the inside, it is successively a metal substrate 2-1, an internal elastic heat-conducting (flow) layer 2-2, and a metal deposition layer A 2-3. Among them, the material of the metal substrate 2-1 is a single element or alloy such as copper, stainless steel, iron, aluminum, etc., preferably stainless steel, and the outer dimension is preferably 4 mm (width) × 7 mm (length) × 0.3 mm (thickness); the material of the internal elastic heat-conducting (flow) layer 2-2 is graphene or carbon nanotubes, and the preferred thickness is 10 microns; the material of the metal deposition layer A 2-3 is gold or platinum, and the thickness is 0.1 - 2 microns, preferably 0.3 microns;

[0033] The thin-film integrated crystal grain 3 is located inside the flow guide piece 2 and is formed by the laminated diffusion connection of a semiconductor thin film 3-1 and an insulating dielectric layer 3-2. Its circumferential periphery is a radiation-reducing coating 3-3, and the upper and lower surfaces are metal deposition layers B 3-4. Among them, the material of the semiconductor thin film 3-1 is lead telluride, bismuth telluride, silicon-germanium alloy, skutterudite, etc., and is made into P-type or N-type through a component doping process, with each layer thickness of 200 nm - 10,000 nm, preferably 1000 nm; the material of the insulating dielectric layer 3-2 is alumina, aluminum nitride, silicon dioxide, titanium oxide, etc., preferably silicon dioxide, with each layer thickness of 10 - 1000 nm, preferably 200 nm; the material of the radiation-reducing coating 3-3 is gold foil or silver foil, and the thickness is 100 nm - 200 nm; the material of the metal deposition layer B 3-4 is gold or platinum, and the thickness is 0.1 - 2 microns, preferably 0.3 microns;

[0034] The crystal grain locator 4 is processed into a frame using mica with better heat insulation performance to provide positioning for the thin-film integrated crystal grain 3 in the horizontal direction;

[0035] The material of the heat-insulating filling medium 5 is an aerosol heat-insulating medium, which is used to fill all the voids inside the module to achieve the protection and positioning of the internal structure.

[0036] This Embodiment 1 is very suitable for achieving efficient and stable thermoelectric direct conversion under medium and high temperature conditions. This embodiment describes the processing, assembly, and use process of a single module. The specific process is as follows:

[0037] (1) Select a thermoelectric semiconductor material (such as lead telluride) and an insulating dielectric layer material (such as silicon dioxide) according to the operating temperature conditions;

[0038] (2) Make the thermoelectric semiconductor material into P-type or N-type through a component doping process;

[0039] (3) Alternately deposit the semiconductor thin film 3-1 and the insulating dielectric layer 3-2 on a separable backing plate through physical or vapor deposition processes, where the thickness of the semiconductor film is 200 nm - 10,000 nm, preferably 1000 nm; the thickness of the insulating dielectric film is 10 - 1000 nm, preferably 200 nm;

[0040] (4) When the thickness to be alternately deposited reaches the required thickness (preferably 3 mm), processes such as laser or diamond wire sawing are used to sequentially divide the large plate formed by vapor deposition into sheet-like grains. The cutting shape can be a cube, a cuboid, etc., preferably a cube, and the size is preferably 3 mm × 3 mm (electrode surface);

[0041] (5) Optionally, two opposite cut surfaces are used as electrode surfaces, and radiation-reducing coatings 3-3 are formed on the remaining surfaces by vapor deposition. The material is preferably gold foil or silver foil, and the thickness is preferably 100 nm to 200 nm;

[0042] (6) Metal deposition layers B3-4 are formed on the upper and lower electrode surfaces by vapor deposition. The material is gold or platinum, and the thickness is 0.1 to 2 μm, preferably 0.3 μm;

[0043] (7) Repeat the above steps (1)-(6) to process a certain number of thin-film integrated grains 3;

[0044] (8) Select a ceramic plate with a suitable thickness (preferably 300 μm) (such as an aluminum nitride ceramic plate), and cut it into a ceramic substrate 1-2 with a suitable size (preferably 60 × 60 mm);

[0045] (9) On one side of the ceramic substrate 1-2, a number of metal substrates 2-1 are processed by welding or vapor deposition according to the circuit design. The material of the metal substrate 2-1 is elemental metal or alloy (preferably stainless steel), and the external dimensions are preferably 4 mm (width) × 7 mm (length) × 0.3 mm (thickness);

[0046] (10) An internal elastic heat-conducting (flow) layer 2-2 is processed on the surface of the metal substrate 2-1 by vapor deposition. The internal elastic heat-conducting (flow) layer 2-2 is composed of densely distributed carbon nanotubes or graphene bundles with an axial direction perpendicular to the surface of the metal substrate 2-1, and the thickness is preferably 10 μm;

[0047] (11) A metal deposition layer A2-3 is formed on the surface of the internal elastic heat-conducting (flow) layer 2-2 by vapor deposition. Its material is gold or platinum, and the thickness is 0.1 to 2 μm, preferably 0.3 μm;

[0048] (12) An external elastic heat-conducting layer 1-1 is processed on the other side of the ceramic substrate 1-2 by vapor deposition. Its axial direction is perpendicular to the surface of the ceramic substrate 1-2 and is composed of densely distributed carbon nanotubes or graphene bundles, and the thickness is preferably 10 μm;

[0049] (13) According to the length and width dimensions of the thin-film integrated grain 3, a grain locator 4 is processed using mica with good heat insulation. The height of the grain locator 4 is slightly less than the height of the thin-film integrated grain 3 (preferably 2.5 mm);

[0050] (14) Insert the processed thin-film integrated grains 3 into the spaces of the grain positioner 4 in sequence. It is required that the grains in adjacent spaces are one N-type and one P-type, so as to ensure that each current-carrying sheet 2 is connected to one N-type thin-film integrated grain 3 and one P-type thin-film integrated grain 3;

[0051] (15) Place a processed heat-conducting substrate 1 and a current-carrying sheet 2 on each of the upper and lower sides of the combined thin-film integrated grains 3 and the grain positioner 4. It is required that the metal deposition layer A2-3 of the current-carrying sheet 2 corresponds to and contacts the metal deposition layer B3-4 of the thin-film integrated grain 3;

[0052] (16) Use the instant diffusion welding process to complete the connection between the metal deposition layer A2-3 and the metal deposition layer B3-4;

[0053] (17) Fill the internal voids of the module with aerosol to form an adiabatic filling medium 5 under vacuum conditions, ensuring the temperature difference on both sides of the thin-film integrated grain during operation while realizing the protection and positioning of the internal structure. Thus, the processing and assembly of the semiconductor thermoelectric conversion module described in this embodiment are completed, which has the function of realizing direct thermoelectric conversion under medium and high temperature conditions and can ensure stable operation during large temperature rises and falls.

[0054] Through experiments on a certain medium and high temperature thermoelectric conversion performance test platform, it is proved that the semiconductor thermoelectric conversion module of the present invention can achieve high-efficiency direct thermoelectric conversion under medium and high temperature conditions and can ensure stable operation during large temperature rises and falls.

[0055] This embodiment uses thin-film integrated grains to achieve direct thermoelectric conversion; uses an elastic heat-conducting current-carrying layer to solve the stress problem during temperature change; uses a metal deposition layer and an instant diffusion welding process to ensure the effectiveness and strength of the connection of each part; uses a high heat-conducting ceramic substrate, a metal current-carrying sheet, an elastic heat-conducting layer, and a metal deposition layer to effectively transfer the temperature to the hot side and cold side of the thin-film integrated grain; uses a circumferential anti-radiation layer and an adiabatic filling medium to reduce the heat dissipation in the horizontal direction and ensure the temperature difference between the hot side and cold side of the thin-film integrated grain; uses a grain positioner to ensure the accuracy of each part during the module assembly process. The overall structure and materials of the invention ensure its stable operation under medium and high temperature conditions.

[0056] Although the preferred embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications to these embodiments once they learn the basic creative concept. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of the present invention.

[0057] Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

[0058] The specific embodiments described above further elaborate on the object, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only the specific embodiments of the present invention and is not used to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains, Characterized in that, It includes: A heat conduction substrate (1), a current guiding sheet (2), a thin film integrated grain (3), a grain positioner (4) and an adiabatic filling medium (5); Wherein the heat conduction substrate (1) includes: An external elastic heat conduction layer (1-1) on the outside and a ceramic substrate (1-2) on the inside; The current guiding sheet (2) is located inside the heat conduction substrate (1), and from outside to inside, it is successively: A metal substrate (2-1), an internal elastic heat conduction layer (2-2), a metal deposition layer A (2-3); The thin film integrated grain (3) is located inside the current guiding sheet (2), and includes: A semiconductor thin film (3-1), an insulating dielectric layer (3-2), an anti-radiation coating (3-3) and a metal deposition layer B (3-4); The metal deposition layer A (2-3) of the current guiding sheet (2) corresponds to and contacts the metal deposition layer B (3-4) of the thin film integrated grain (3), and the connection between the metal deposition layer A (2-3) and the metal deposition layer B (3-4) is completed by using the instant diffusion welding process; The grain positioner (4) provides positioning for the thin film integrated grain (3) in the horizontal direction; The adiabatic filling medium (5) is used to fill all the voids inside the module to realize the protection and positioning of the internal structure.

2. The medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains according to claim 1, Characterized in that, The material of the external elastic heat conduction layer (1-1) is graphene or carbon nanotubes, with a thickness of 10 microns, and the material of the inner ceramic substrate (1-2) is aluminum nitride ceramic, alumina ceramic or silicon nitride ceramic.

3. The medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains according to claim 2, Characterized in that, The thickness of the external elastic heat conduction layer (1-1) is 10 microns, the thickness of the inner ceramic substrate (1-2) is 300 microns, and the external dimension is 60×60 mm.

4. The medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains according to claim 1, Characterized in that, The material of the metal substrate (2-1) is copper, stainless steel, iron, aluminum or alloy; the material of the internal elastic heat conduction layer (2-2) is graphene or carbon nanotubes; the material of the metal deposition layer A (2-3) is gold or platinum.

5. The medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains according to claim 4, Characterized in that, The external dimension of the metal substrate (2-1) is 4 mm×7 mm×0.3 mm, the thickness of the internal elastic heat conduction layer (2-2) is 10 microns; the thickness of the metal deposition layer A (2-3) is 0.1~2 microns.

6. The medium and high temperature semiconductor thermoelectric conversion module based on thin film integrated grains according to claim 1, Characterized in that, The thin-film integrated grain (3) is formed by diffusion bonding of a semiconductor thin film (3-1) and an insulating dielectric layer (3-2). Its outer periphery is a radiation-reducing coating (3-3), and its upper and lower surfaces are metal deposition layers B (3-4). The material of the semiconductor thin film (3-1) is lead telluride, bismuth telluride, silicon-germanium alloy, or skutterudite, and is made into P-type or N-type through a component doping process. The material of the insulating dielectric layer (3-2) is aluminum oxide, aluminum nitride, silicon dioxide, or titanium oxide; the material of the radiation-reducing coating (3-3) is gold foil or silver foil; the material of the metal deposition layer B (3-4) is gold or platinum.

7. The medium-high temperature semiconductor thermoelectric conversion module based on thin-film integrated grains according to claim 6, characterized in that, the thickness of each layer of the semiconductor thin film (3-1) is 200 nanometers to 10,000 nanometers, and the thickness of each layer of the insulating dielectric layer (3-2) is 10 to 1000 nanometers; the thickness of the radiation-reducing coating (3-3) is 100 nanometers to 200 nanometers; the thickness of the metal deposition layer B (3-4) is 0.1 to 2 micrometers.

8. The medium-high temperature semiconductor thermoelectric conversion module based on thin-film integrated grains according to claim 1, characterized in that, the grain locator (4) is processed into a frame using mica with good heat insulation.

9. The medium-high temperature semiconductor thermoelectric conversion module based on thin-film integrated grains according to claim 1, characterized in that, the material of the heat-insulating filling medium (5) is an aerosol heat-insulating medium.

10. The medium-high temperature semiconductor thermoelectric conversion module based on thin-film integrated grains according to claim 1, characterized in that, the height of the grain locator (4) is less than the height of the thin-film integrated grain (3). The thin-film integrated grains (3) are sequentially inserted into the spaces of the grain locator (4). The grains in adjacent spaces are one N-type and one P-type, so that each current-carrying sheet (2) is connected to one N-type thin-film integrated grain (3) and one P-type thin-film integrated grain (3).

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