Ingot growth device

Abstract

The present invention discloses an ingot growing device. The ingot growing device according to an embodiment of the present invention may include: a growth furnace, in which a main crucible for accommodating molten silicon for growing an ingot is arranged; a susceptor, which surrounds the outer side of the main crucible and is used to heat the main crucible; a heater, which is provided with a coil, the coil is formed in a manner of surrounding the outer side of the susceptor, generates a magnetic field by receiving a power supply, and heats the susceptor by electromagnetic induction generated by the magnetic field; and a heat insulating component, which is arranged between the coil and the susceptor.

Description

Technical Field

[0001] The present invention relates to an ingot growing apparatus. Background Art

[0002] Monocrystalline silicon is the basic material for most solar and semiconductor components. These materials are manufactured into single crystals with high purity. One of the manufacturing methods is the Czochralski process.

[0003] In the Czochralski crystallization method, silicon is placed in a crucible and then heated to melt the silicon. A single crystal seed is pulled upward while in contact with the molten silicon to grow an ingot having a predetermined diameter.

[0004] In the continuous growth Czochralski method (CCz: Continuous Czochralski), which is one of such Czochralski methods, solid polycrystalline silicon or molten silicon is continuously injected into the crucible to replenish the consumed molten silicon and to continuously grow the ingot.

[0005] In order to grow an ingot by such a continuous growth type Czochralski method, it is particularly important to ensure energy efficiency of the electric energy consumed when heating the crucible. Summary of the invention

[0006] According to an embodiment of the present invention, an object of the present invention is to provide an ingot growing apparatus that improves the energy efficiency of electric energy used to heat a crucible.

[0007] An ingot growth device according to an embodiment of the present invention may include: a growth furnace, inside which is arranged a main crucible for containing molten silicon for growing the ingot; a base, surrounding the outer side of the main crucible and used for heating the main crucible; a heater, provided with a coil, wherein the coil is formed in a manner of surrounding the outer side of the base, generates a magnetic field by receiving power, and heats the base by means of electromagnetic induction generated by the magnetic field; and an insulating component, arranged between the coil and the base.

[0008] In this case, the insulating component may be formed by a plate-shaped component disposed on the outer side surface of the base, and one lateral side surface of the insulating component and the other lateral side surface of the insulating component may be arranged to face each other and be spaced apart on one side of the outer side surface of the base.

[0009] In this case, a non-magnetic body may be provided between one lateral side surface of the heat insulating member and the other lateral side surface of the heat insulating member.

[0010] In this case, the heater may further include an outer cover formed to surround an outer side surface of the coil to block the coil from being exposed to an inner space of the growth furnace.

[0011] In this case, the heat insulating member may be disposed on the upper side of the outer cover, and may be formed so as to partially cover the upper side of the outer cover.

[0012] In this case, the outer cover may be formed of ceramics.

[0013] In this case, the heat insulating member may be formed of carbon fiber.

[0014] In this case, the ingot growing apparatus may further include a covering member configured to block the insulating member from being exposed to the inner space of the growing furnace.

[0015] In this case, the covering member may be made of ceramic material.

[0016] In this case, the cover member may include at least one of aluminum oxide (Al2O3), zirconium oxide (ZrO2), silicon dioxide (SiO2) or silicon nitride (Si3N4).

[0017] In this case, the coil may include a cooling pipe for flowing cooling water inside the coil.

[0018] In this case, the thickness of the thermal insulation member may be twice as thick as the thickness of the base.

[0019] The ingot growing device according to the embodiment of the present invention can block the heat generated at the base from moving toward the coil by means of the heat insulating component, thereby preventing the coil from being damaged by the heat.

[0020] Furthermore, the heat generated in the susceptor can be blocked from moving to the cooling water flowing inside the coil by the heat insulating member, thereby improving the energy efficiency of the electric energy used to heat the susceptor. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 The figure briefly shows an ingot growing apparatus according to an embodiment of the present invention.

[0022] Figure 2a To highlight Figure 1 A cross-sectional view of the heater, insulation component and cover component in FIG.

[0023] Figure 2b To show the view from the top Figure 1 Figure 3 shows the morphology of the insulation component in FIG.

[0024] Figure 3FIG. 4 is a diagram showing the temperature of a hot zone of an ingot growing apparatus according to an embodiment of the present invention through simulation.

[0025] Figure 4 FIG. 1 is a diagram showing the temperature of a hot zone of an ingot growing apparatus when no heat insulating member is provided, through simulation.

[0026] Figure 5 This is a graph showing the temperature of the base based on the material of the cover and whether or not the heat insulating member is installed, through simulation.

[0027] Figures 6 to 8 Graphs showing the susceptor temperature and the ambient temperature of the susceptor depending on the distance between the coil and the susceptor.

[0028] Figures 9 to 11 The figure shows the susceptor temperature and the surrounding temperature of the susceptor based on the thickness of the heat insulating member through simulation.

[0029] Fig.12 This is a diagram showing the susceptor temperature and the surrounding temperature of the susceptor when the outer cover heat insulating member is arranged below the coil through simulation.

[0030] Fig.13 This is a diagram showing the susceptor temperature and the surrounding temperature of the susceptor when the outer cover heat insulating member is not arranged under the coil through simulation.

[0031] Description of Reference Numerals

[0032] 100: Ingot growth device 110: Growth furnace

[0033] 120: Main crucible 130: Base

[0034] 140: Heater 141: Coil

[0035] 143: Insulation components DETAILED DESCRIPTION

[0036] The words and terms used in this specification and the scope of protection of the invention should not be limited to the commonly understood meaning or the meaning in the dictionary. Based on the principle that the inventor can define the terms and concepts in order to best explain his invention, they should be interpreted as meanings and concepts that are consistent with the technical ideas of the present invention.

[0037] Therefore, the embodiments described in this specification and the structures shown in the accompanying drawings belong to a preferred embodiment of the present invention and do not fully represent the technical ideas of the present invention. At the time of application of the present invention, the corresponding structures may have multiple equivalents and modifications that can be replaced.

[0038] In this specification, terms such as "including" or "having" should be understood as being used only to describe the existence of features, numbers, steps, actions, structural elements, components or combinations thereof recorded in the specification, rather than excluding the existence or additional possibility of one or more other features, numbers, steps, actions, structural elements, components or combinations thereof.

[0039] Unless otherwise specified, a statement that a certain structural element is located “in front of,” “behind,” “above,” or “below” another structural element includes not only a situation where it is located “in front of,” “behind,” “above,” or “below” another structural element in direct contact with the other structural element, but also a situation where the other structural element is disposed in between. Furthermore, unless otherwise specified, a statement that a certain structural element is “connected to” another structural element includes not only a situation where it is directly connected, but also a situation where it is indirectly connected.

[0040] Hereinafter, the ingot growing device of the embodiment of the present invention will be described with reference to the accompanying drawings. In this specification, in order to simplify the accompanying drawings, in the process of describing the ingot growing device of the embodiment of the present invention, the structure irrelevant to the content of the present invention will not be shown in detail or will not be shown, and the ingot growing device of the present invention will be described with the content related to the idea of ​​the present invention as the center.

[0041] In this specification, the direction of the arrow of the Z axis is referred to as the upper side of the growth furnace. The lower side means the direction opposite to the upper side.

[0042] Figure 1 The figure briefly shows an ingot growing apparatus according to an embodiment of the present invention.

[0043] Reference Figure 1 The ingot growing apparatus 100 according to the embodiment of the present invention includes a growing furnace 110 , a main crucible 120 , a susceptor 130 , a heater 140 , and a heat insulating component 143 .

[0044] The growth furnace 110 includes an inner space 110a maintained in a vacuum state, so that the ingot I grows in the inner space 110a. A main crucible 120 described later is disposed in the inner space 110a.

[0045] A vacuum pump (not shown) and an inert gas supply unit (not shown) are provided in the growth furnace 110. The vacuum pump can maintain a vacuum atmosphere in the inner space 110a. In addition, the inert gas supply unit supplies an inert gas to the inner space 110a. For example, the inert gas may be argon (Ar).

[0046] The main crucible 120 is received in the inner space 110a of the growth furnace 110. The main crucible 120 can receive molten silicon M. The main crucible 120 is generally formed in a reverse dome shape. In addition, the shape of the main crucible 120 is not limited to the reverse dome shape, and can be formed in various shapes such as a cylinder shape.

[0047] The main crucible 120 is made of quartz, but is not limited to being made of quartz, and may be made of various materials that are heat-resistant at temperatures above about 1400° C. and can withstand drastic temperature changes.

[0048] Moreover, when the single crystal seed S is in contact with the molten silicon M contained in the above-mentioned main crucible 120, if the above-mentioned single crystal seed S is pulled toward the upper side (Z axis) by the metal wire W connected to the upper side of the above-mentioned growth furnace 110, the above-mentioned ingot I is grown in the form of an ingot I having a specified diameter along the pulling direction (Z axis).

[0049] Furthermore, a preliminary melting part (not shown) for receiving and melting the solid silicon raw material is provided in the growth furnace 110 . The preliminary melting part supplies the molten silicon to the main crucible 120 .

[0050] The susceptor 130 surrounds the outer side of the main crucible 120. The susceptor 130 supports the main crucible 120. The inner side of the susceptor 130 is formed in a shape corresponding to the outer side of the main crucible 120. For example, if the main crucible 120 is formed in an inverted dome shape, the susceptor 130 is also formed in an inverted dome shape. The susceptor 130 is formed of graphite. In addition, the susceptor 130 is not limited to being formed of graphite, and can be formed of a variety of materials with high heat resistance and conductive properties.

[0051] Therefore, even if the main crucible 120 is made of quartz and deforms under high temperature conditions, the susceptor 130 can surround and support the main crucible 120 in such a manner that the main crucible 120 can maintain the state of accommodating the molten silicon M.

[0052] Furthermore, a susceptor support part 150 for supporting the susceptor 130 is disposed at the lower side 112 of the growth furnace 110. The upper end of the susceptor support part 150 is formed in a shape corresponding to the lower end of the susceptor 130. Furthermore, in a state where the susceptor support part 150 supports the susceptor 130 at the lower side of the growth furnace 110, the susceptor support part 150 rotates together with the susceptor 130. Therefore, in a state where the main crucible 120 accommodates the molten silicon M, the main crucible 120 rotates together with the susceptor 130.

[0053] Furthermore, a driving unit (not shown) for providing a rotational force to rotate the susceptor support unit 150 is provided in the growth furnace 110. The susceptor support unit 150 is rotatably connected to the driving unit. When the driving unit receives power and provides a rotational force to the susceptor support unit 150, the main crucible 120 rotates together with the susceptor 130.

[0054] Furthermore, a heater 140 for heating the susceptor 130 is provided in the growth furnace 110. The heater 140 includes a coil 141 for generating a magnetic field by receiving power and a cover 142 for surrounding the coil 141.

[0055] The coil 141 is formed to surround the outer side of the susceptor 130. The coil 141 generates a magnetic field by receiving a power source. In addition, the coil 141 generates a current in the susceptor 130 by electromagnetic induction generated by the magnetic field. In this case, the current generated in the susceptor 130 is converted into thermal energy. Therefore, the heater 140 heats the susceptor 130. The heat of the susceptor 130 is transferred to the main crucible 120, and the susceptor 130 heats the main crucible 120.

[0056] The outer cover 142 supports the coil 141 in such a manner that the coil 141 maintains a predetermined shape. The outer cover 142 is formed of ceramic. For example, the outer cover 142 may include at least one of aluminum oxide (Al2O3), zirconium oxide (ZrO2), silicon dioxide (SiO2), or silicon nitride (Si3N4).

[0057] The outer cover 142 blocks the coil from being exposed to the inner space 110a of the growth furnace 110. Therefore, the outer cover 142 blocks the coil 141 from being exposed to the inner space 110a of the growth furnace 110, thereby preventing arc discharge from being generated due to a plasma phenomenon in the vacuum state or arc discharge from being generated due to the coil 141 contacting an inert gas (e.g., argon) existing in the inner space 110a when the coil 141 receives power and forms a magnetic field.

[0058] Furthermore, a heater support part 160 for supporting the heater 140 is disposed at the lower side of the growth furnace 110. The heater support part 160 is substantially formed in a cylindrical shape. The susceptor support part 150 is disposed inside the heater support part 160 formed in the cylindrical shape. Furthermore, the upper end of the heater support part 160 is formed in a shape corresponding to the lower end of the heater 140, so that the heater 140 is disposed at the upper end of the heater support part 160.

[0059] A heat insulating member 143 for blocking heat transfer is provided between the susceptor 130 and the coil 141. Also, a cover member 144 surrounds the heat insulating member 143 to prevent the heat insulating member 143 from being exposed to the inner space 110a of the growth furnace 110.

[0060] The heat insulating member 143 and the covering member will be described in detail with reference to the accompanying drawings in the following contents.

[0061] Figure 2a To highlight Figure 1 A cross-sectional view of the heater, the heat insulating member and the cover member in FIG. Figure 2b To show the view from the top Figure 1 Figure 3 shows the morphology of the insulation component in FIG.

[0062] Reference Figure 2a and Figure 2b The heat insulating member 143 is disposed on the upper side of the outer cover 142 and is formed in a manner of partially covering the upper side of the outer cover 142. In addition, the heat insulating member 143 is formed in a manner of partially covering the outer side of the base 130. In this case, the heat insulating member 143 may be formed by a plate-shaped member disposed between the outer cover 142 and the base 130.

[0063] On the other hand, a cooling pipe 145 for flowing cooling water is formed inside the coil 141 . The temperature of the cooling water in the cooling pipe 145 is about 300 K. The cooling water flowing along the cooling pipe 145 cools the heat generated in the coil 141 .

[0064] The heat insulating member 143 blocks the heat of the susceptor 130 from moving to the coil 141. In addition, the heat insulating member 143 blocks the heat of the susceptor 130 from moving to the cooling water flowing inside the coil 141. Thus, the heat of the susceptor 130 moves to the main crucible 120, thereby improving the energy efficiency of the electric energy used to heat the main crucible 120.

[0065] like Figure 2b As shown, the lateral side 143a of the heat insulating member 143 and the lateral side 143b of the heat insulating member 143 are arranged to face each other and be spaced apart on the outer side of the base 130. In addition, at least one cut-out area is formed in the heat insulating member 143. That is, the heat insulating member 143 does not form a ring shape. Therefore, the one side 143a of the heat insulating member 143 and the other side 143b of the heat insulating member 143 are not electrically connected, thereby preventing the heat insulating member 143 from heating due to electromagnetic induction.

[0066] Furthermore, according to various embodiments of the present invention, the heat insulating member 143 may be composed of a plurality of heat insulating members separated from each other by a plurality of cutout regions. The plurality of heat insulating members may be electrically insulated from each other by the plurality of cutout regions.

[0067] Furthermore, the heat insulating member 143 is formed of carbon fiber. Furthermore, the heat insulating member 143 is formed of a felt containing carbon fiber. Furthermore, according to various embodiments of the present invention, the heat insulating member 143 may be formed of a laminated structure of a felt containing carbon fiber. Furthermore, according to various embodiments of the present invention, the heat insulating member 143 may be formed of zirconium oxide (ZrO2) or silicon dioxide (SiO2) in a powdered form.

[0068] The cover member 144 is formed so as to surround the insulating member 143. Furthermore, the cover member 144 is formed so as to surround a portion of the cover 142 adjacent to the insulating member 143. Furthermore, the cover member 144 fills the space between the base 130 and the insulating member 143. Thus, the cover member 144 blocks the insulating member 143 from being exposed to the growth furnace 110 (see Figure 1 ) of the internal space 110a (refer to Figure 1 ) to prevent the insulating member 143 from generating arc discharge due to a plasma phenomenon in a vacuum state or from generating arc discharge due to contact between the insulating member 143 and the inert gas present in the internal space 110a.

[0069] Furthermore, the cover member 144 is formed of a ceramic material. For example, the cover member 144 is formed of at least one of aluminum oxide (Al2O3), zirconium oxide (ZrO2), silicon dioxide (SiO2) or silicon nitride (Si3N4). Furthermore, according to various embodiments of the present invention, the cover member 144 may be formed of the same material as the outer cover 142.

[0070] Furthermore, according to various embodiments of the present invention, the covering member 144 is formed of a coating layer that covers the heat insulating member 143 and also covers a portion of the outer cover 142 adjacent to the heat insulating member 143 .

[0071] A non-magnetic body 146 is provided between one lateral side 143a of the heat insulating member 143 and the other lateral side 143b of the heat insulating member 143. The non-magnetic body 146 electrically insulates one side 143a of the heat insulating member 143 from the other side 143b of the heat insulating member 143.

[0072] Furthermore, the non-magnetic body 146 is formed of ceramics. For example, the non-magnetic body 146 is formed of one of alumina (Al2O3), zirconium oxide (ZrO2), silicon dioxide (SiO2), and silicon nitride (Si3N4).

[0073] Furthermore, a distance e between one side 143a of the heat insulating member 143 and the other side 143b of the heat insulating member 143 is greater than about 0.5 mm. For example, when the distance e is about 0.5 mm, the thickness of the non-magnetic body 146 is also 0.5 mm.

[0074] Furthermore, according to various embodiments of the present invention, a plurality of cutout regions may be formed in the thermal insulation member 143 , and the non-magnetic body 146 may be filled in the plurality of cutout regions.

[0075] In an embodiment of the present invention, the thickness t of the heat insulating component is 40 mm to 60 mm. The thickness t of the heat insulating component will be described in detail with reference to the accompanying drawings in the following content.

[0076] Figure 3 FIG. 1 is a diagram showing the temperature of a hot zone of an ingot growing apparatus according to an embodiment of the present invention through simulation.

[0077] Figure 4 FIG. 1 is a diagram showing the temperature of a hot zone of an ingot growing apparatus when no heat insulating member is provided, through simulation.

[0078] The ingot growing apparatus 100 (see Figure 1 ) is defined as a hot zone including the base 130 (refer to Figure 1 ) and the base 130 (refer to Figure 1 ) of the surrounding structure.

[0079] Reference Figure 3 and Figure 4 , the above-mentioned insulation component 143 (refer to Figure 2a ) is set or not to determine the heating performance of the base 130.

[0080] If you compare Figure 3 and Figure 4 When the heat insulating member is disposed between the coil and the susceptor, the temperature of the side surface of the susceptor is close to about 1695° C., but when the heat insulating member is not disposed between the coil and the susceptor, the temperature of the susceptor does not exceed about 1385° C. Since the melting point of silicon is about 1414° C., more electric energy will be consumed to increase the temperature of the susceptor when the heat insulating member is not disposed.

[0081] As described above, the ingot growing apparatus according to the embodiment of the present invention improves the energy efficiency of the electric energy required to increase the temperature of the susceptor by disposing a heat insulating member between the coil and the susceptor.

[0082] Figure 5 This is a graph showing the temperature of the base based on the material of the cover and whether or not the heat insulating member is installed, through simulation.

[0083] Reference Figure 5 The influence of the base temperature is examined by comparing the case where the material of the above-mentioned outer cover (for example, castable) is zirconium oxide (ZrO2) and the case where the material of the above-mentioned outer cover (for example, castable) is aluminum oxide (Al2O3).

[0084] In the case where the material of the above-mentioned outer cover (e.g., castable) is zirconium oxide (ZrO2) and in the case where the material of the above-mentioned outer cover (e.g., castable) is aluminum oxide (Al2O3), the temperature distribution based on the distance (Susceptor Upper Distance) formed from the upper side of the above-mentioned susceptor is similar.

[0085] On the other hand, Figure 3 and Figure 4 As shown, when the thermal insulation member is not provided (for example, ZrO2_Removed Felt, Al2O3_Removed Felt), the susceptor temperature is lower than the susceptor temperature when the thermal insulation member is provided, regardless of the material of the cover.

[0086] As described above, the thermal insulation component of the ingot growing apparatus according to the embodiment of the present invention improves the heat generation performance of the susceptor, thereby reducing the power consumption for heating the susceptor.

[0087] Figures 6 to 8 The following is a diagram showing the susceptor temperature and the ambient temperature of the susceptor based on the distance between the coil and the susceptor through simulation.

[0088] like Figure 6 As shown, the coil is arranged in a manner of being separated from the base by a first distance, such as Figure 7 As shown, the coil is arranged in a manner of being separated from the base by a second distance, such as Figure 8 As shown, the coil is arranged in a manner of being separated from the base by a third distance. The second distance is greater than the first distance, and the third distance is greater than the second distance.

[0089] Moreover, if Figures 6 to 8 As shown, a heat insulating member having the same thickness is arranged between the coil and the above-mentioned base.

[0090] right Figures 6 to 8 to compare with Figure 7 and Figure 8 Compared to the base shown, Figure 6 The base shown generates heat at a higher temperature as a whole. This is because the heat of the base will move to the space between the coil and the base as the distance between the coil and the base increases, resulting in increased heat loss of the base.

[0091] Moreover, if Figure 6 As shown, the electric energy used to heat the base reaches 49.75kW. Figure 7 As shown in FIG. 1 , the electric energy used to heat the base reaches 53.47 kW. Figure 8 As shown, the electric energy used to heat the susceptor reaches 51.04 kW. As described above, when the heat insulating member is disposed between the coil and the susceptor, the closer the coil is to the susceptor, the less electric energy used to heat the susceptor.

[0092] Figures 9 to 11 The figure shows the susceptor temperature and the surrounding temperature of the susceptor based on the thickness of the heat insulating member through simulation.

[0093] like Fig. 9 As shown, the coil is arranged in a manner of being separated from the base by a fourth distance, such as Fig.10 As shown, the coil is arranged in a manner of being separated from the base by a fifth distance, such as Fig.11 As shown, the coil is arranged in a manner of being separated from the base by a sixth distance. The fifth distance is greater than the fourth distance, and the sixth distance is greater than the fifth distance.

[0094] Fig. 9 The thickness of the insulation shown is 10 mm. Fig.10 The thickness of the insulation shown is 30 mm. Fig.11 The thickness of the insulation shown is 50 mm.

[0095] Moreover, if Fig. 9 As shown in FIG. 1 , the electric energy used to heat the base reaches 65.76 kW. Fig.10 As shown in FIG. 1 , the electric energy used to heat the base reaches 53.88 kW. Fig.11 As shown, the electrical energy used to heat the base reaches 45.95 kW.

[0096] like Figures 6 to 8 As shown in FIG. 1 , the farther the coil is from the base, the more electric energy used to heat the base will increase, and the thicker the insulation component is, the less electric energy used to heat the base will decrease. In other words, it can be seen that in order to reduce the electric energy used to heat the base, increasing the thickness of the insulation component is more important than shortening the distance between the coil and the base.

[0097] On the other hand, according to an embodiment of the present invention, the thickness of the above-mentioned insulation component can reach about twice the thickness of the base. For example, in the case where the thickness of the above-mentioned base reaches 25 mm, the thickness of the above-mentioned insulation component will reach 50 mm. If the thickness of the above-mentioned insulation component is less than twice the thickness of the base, the consumption of electric energy will increase. On the contrary, if the thickness of the above-mentioned insulation component is greater than twice the thickness of the base, although the consumption of electric energy will not increase, the cost of the insulation component will increase.

[0098] Fig.12 This is a diagram showing the susceptor temperature and the surrounding temperature of the susceptor when the outer cover heat insulating member is arranged on the lower side of the coil through simulation. Fig.13 This is a diagram showing the susceptor temperature and the surrounding temperature of the susceptor when the outer cover heat insulating member is not arranged under the coil through simulation.

[0099] According to another embodiment of the present invention, Fig.12 As shown, a cover heat insulating member 148 is provided on the lower side of the coil for blocking heat movement.

[0100] Fig.12 The base temperature and the surrounding temperature of the base in the case of the outer cover insulation member 148 are higher than Fig.13 The susceptor temperature and the susceptor surrounding temperature are shown when no outer cover heat insulating member is provided.

[0101] Moreover, for Fig.12The electrical energy required to heat the base shown is 45.98kW, which is used to Fig.13 The electric energy used to heat the base shown in the figure reaches 49.75 kW. This is because the heat released from the base is blocked by the outer cover heat insulating member 148. That is, the electric energy used to heat the base when the outer cover heat insulating member 148 is configured is reduced by about 7.6% compared to the electric energy used to heat the base when the outer cover heat insulating member is not configured.

[0102] The embodiments of the present invention are described above, but the concept of the present invention is not limited to the embodiments presented in this specification. Ordinary technicians in the technical field to which the present invention belongs who understand the concept of the present invention can easily propose other embodiments within the scope of the same concept by adding, changing, deleting, adding, etc. structural elements, but this also falls within the scope of the concept of the present invention.

Claims

1. An ingot growing device, characterized in that: include: A growth furnace, in which a main crucible for containing molten silicon for growing an ingot is arranged; A base, surrounding the outer side of the main crucible, and used for heating the main crucible; The heater is provided with a coil, the coil is formed in a manner of surrounding the outer side surface of the susceptor, generates a magnetic field by receiving a power source, and heats the susceptor by electromagnetic induction generated by the magnetic field; and further provided with an outer cover, the outer cover is formed in a manner of surrounding the outer side surface of the coil, and is used to block the coil from being exposed to the inner space of the growth furnace; A heat insulating member, disposed between the coil and the base; a covering member located between the heat insulating member and the base; and The insulating component has at least one cutout region, and a non-magnetic body is filled in the cutout region to connect one lateral side of the insulating component with the other lateral side of the insulating component, and at the same time, the one lateral side of the insulating component and the other lateral side of the insulating component are electrically insulated from each other; And wherein the covering member is configured to wrap the heat insulating member, the non-magnetic body and one side of the outer cover to block the heat insulating member from being exposed to the inner space of the growth furnace.

2. The ingot growing device according to claim 1, characterized in that: The heat insulating member is formed by a plate-shaped member provided on the outer side surface of the base. The one lateral side surface of the heat insulating member and the other lateral side surface of the heat insulating member are arranged to face each other and be spaced apart from each other on the outer side surface side of the base.

3. The ingot growing device according to claim 1, characterized in that: The heat insulating member is disposed on the upper side surface of the outer cover and is formed so as to partially cover the upper side surface of the outer cover.

4. The ingot growing device according to claim 1, characterized in that: The outer cover is formed of ceramic.

5. The ingot growing device according to claim 1, characterized in that: The heat insulating member is formed of carbon fibers.

6. The ingot growing device according to claim 1, characterized in that: The covering component is made of ceramic material.

7. The ingot growing device according to claim 1, characterized in that: The covering member includes at least one of aluminum oxide, zirconium oxide, silicon dioxide or silicon nitride.

8. The ingot growing device according to claim 1, characterized in that: The coil includes a cooling pipe for flowing cooling water inside the coil.

9. The ingot growing device according to claim 1, characterized in that: The thickness of the heat insulating component is twice the thickness of the base.

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