Mixed light emitting diode device

Abstract

A mixed-light LED device includes first, second, and third horizontally conductive grains and first and second-type electrodes. Each grain includes a first surface configured with a first-type semiconductor, a second surface opposite the first surface and configured with a second-type semiconductor, and a P-N junction between the first and second surfaces. The first grain is interspersed with first through-holes extending through the first and second surfaces and the P-N junction, and two second through-holes extending through the second-type semiconductor. The first surfaces of the second and third grains are disposed above the first grain, facing the first surface of the first grain. The first-type electrodes are electrically isolated and disposed in the first through-holes to simultaneously connect the first-type semiconductors of each grain vertically. The second-type electrodes are disposed between each second through-hole and the second surface of the first grain to electrically connect the second-type semiconductors of each grain vertically. The first-type electrodes and the second-type electrodes are used to vertically connect the second and third grains to the first grain, thereby saving planar area.

Description

Technical Field

[0001] The present invention relates to a light emitting diode device, and in particular to a mixed light light emitting diode device. Background Art

[0002] Compared to existing lighting tubes or cold cathode fluorescent lamps (CCFLs), light-emitting diodes (LEDs) have advantages such as low power consumption, small size, and long life. Therefore, LEDs have gradually replaced existing lighting tubes and CCFLs in applications ranging from general daily lighting equipment to backlight modules for liquid crystal displays (LCDs).

[0003] Taking white light emitting diodes as an example, they use light mixing technology to produce white light. Common light mixing techniques either use LEDs that can emit blue light or ultraviolet light to excite yellow phosphors to mix into white light, or use LEDs that can emit three primary colors such as red, green and blue to mix into white light.

[0004] For example, Taiwan Province of China Invention Patent Publication No. 201301570 (hereinafter referred to as "Patent 1") discloses a multi-color LED comprising an epitaxial substrate, a semiconductor layer epitaxially formed on a surface of the epitaxial substrate, and a first light source, a second light source, and a third light source epitaxially formed on the semiconductor layer and spaced apart from each other. Patent 1 controls the color requirements of different lighting applications by adjusting the areas of the first, second, and third light sources.

[0005] Again, such as Figure 1 As shown, the structure 9 of a light-emitting element disclosed in the invention patent publication No. 201214659 of Taiwan Province of China (hereinafter referred to as the former patent 2) includes a bracket 91, a first insulating substrate 92 configured on the bracket 91, two first LED die groups 93 configured on the first insulating substrate 92, a second insulating substrate 94 configured on the first insulating substrate 92 and spaced apart from the first LED die group 93, a second LED die group 95 configured on the second insulating substrate 94, a sealing resin 96 encapsulating the first LED die group 93 and the second LED die group 95, and a wavelength conversion layer 97 covering the sealing resin 96; wherein the die in the first LED die group 93 and the second LED die group 95 are connected in series in sequence.

[0006] Although both Case 1 and Case 2 can emit light of the desired wavelength band through the principle of light mixing, the spatial arrangement of the light source of Case 1 and the first LED die group 93 and second LED die group 95 of Case 2 are all horizontal, which has limited contribution to the needs of those who urgently need to reduce the two-dimensional / flat space. Therefore, the brightness that can be provided per unit area is easily restricted.

[0007] As can be seen from the above description, improving the structure of mixed light LED devices to increase brightness within a limited two-dimensional / planar space (ie, within a unit area) is a problem to be solved by those skilled in the art. Summary of the Invention

[0008] An object of the present invention is to provide a light-mixing LED device that can improve brightness and save area in a limited plane space.

[0009] The mixed light emitting diode device of the present invention includes a first horizontal feedthrough chip, a second horizontal feedthrough chip, a third horizontal feedthrough chip, and an electrode unit.

[0010] The first horizontal conducting die includes a first surface on which a first-type semiconductor is disposed, a second surface opposite the first surface and on which a second-type semiconductor is disposed, a PN junction (P-N junction) between the first and second surfaces, and a first through-hole and two second through-holes spaced apart from each other. The first through-hole vertically penetrates the first surface of the first-type semiconductor, the PN junction, and the second surface of the second-type semiconductor of the first horizontal conducting die, while the second through-hole vertically penetrates the second-type semiconductor of the first horizontal conducting die.

[0011] The second horizontal conducting die includes a first surface on which a first-type semiconductor is disposed, and a second surface opposite to the first surface and on which a second-type semiconductor is disposed. The second horizontal conducting die is spaced apart from the first horizontal conducting die, and the first surface of the first-type semiconductor of the second horizontal conducting die faces the first surface of the first-type semiconductor of the first horizontal conducting die.

[0012] The third horizontal conducting die includes a first surface configured with a first-type semiconductor and a second surface opposite the first surface configured with a second-type semiconductor. The third horizontal conducting die is spaced apart from the first horizontal conducting die, with the first surface of the first-type semiconductor of the third horizontal conducting die facing the first surface of the first-type semiconductor of the first horizontal conducting die.

[0013] The electrode unit includes a first-type electrode and three second-type electrodes. The first-type electrode is electrically isolated and disposed in the first through-hole of the first horizontally conductive die, thereby simultaneously vertically connecting the first-type semiconductor of the second horizontally conductive die to the first-type semiconductor of the first horizontally conductive die, and the first-type semiconductor of the third horizontally conductive die to the first-type semiconductor of the first horizontally conductive die. Two of the three second-type electrodes are respectively disposed in corresponding second through-holes of the first horizontally conductive die, and the remaining one of the three second-type electrodes is disposed on the second surface of the second-type semiconductor of the first horizontally conductive die and interposed between the first-type electrode and the two second-type electrodes, thereby respectively vertically connecting the second-type semiconductor of the second horizontally conductive die to the second-type semiconductor of the first horizontally conductive die, and the second-type semiconductor of the third horizontally conductive die to the second-type semiconductor of the first horizontally conductive die.

[0014] In the hybrid light-emitting diode device of the present invention, the first horizontal conductive die further includes an insulating layer, and the first through hole of the first horizontal conductive die is defined by the inner annular surface of the first horizontal conductive die. The insulating layer is formed on the inner annular surface and extends from the inner annular surface to the second surface of the first horizontal conductive die.

[0015] In the mixed light emitting diode device of the present invention, each first-type semiconductor and each second-type semiconductor are a P-type semiconductor and an N-type semiconductor respectively, and the first-type electrode and each second-type electrode are a P-type electrode and an N-type electrode respectively.

[0016] In the mixed light emitting diode device of the present invention, each first-type semiconductor and each second-type semiconductor are an N-type semiconductor and a P-type semiconductor respectively, and the first-type electrode and each second-type electrode are an N-type electrode and a P-type electrode respectively.

[0017] The mixed light LED device of the present invention further includes a driving substrate. The driving substrate is disposed under the first horizontal conduction type die to couple the first type electrode and the three second type electrodes.

[0018] The mixed light LED device of the present invention further includes a light shielding wall surrounding the first horizontal conductive die, the second horizontal conductive die, and the third horizontal conductive die to expose the second surface of the second horizontal conductive die and the second surface of the third horizontal conductive die.

[0019] The mixed light LED device of the present invention further includes a light-transmitting package, which covers the first horizontal conductive die, the second horizontal conductive die, the third horizontal conductive die, and the light-shielding wall.

[0020] In the mixed light emitting diode device of the present invention, the light-transmitting package is provided with an upwardly protruding curved surface above the second surfaces of the second horizontally conductive die and the third horizontally conductive die.

[0021] In the mixed light LED device of the present invention, the area of ​​the second surface of the first horizontal conductive die is equal to the area of ​​the second surface of the second horizontal conductive die plus the area of ​​the second surface of the third horizontal conductive die.

[0022] The beneficial effect of the present invention is that: by utilizing the first through hole penetrating the first and second surfaces of the first horizontal conductive grain and the first-type electrode arranged therein, and the second through hole penetrating the second-type semiconductor of the first horizontal conductive grain and the three second-type electrodes arranged in each second through hole and on the second surface of the first horizontal conductive grain, the second horizontal conductive grain and the third horizontal conductive grain can be vertically arranged and electrically connected above the first horizontal conductive grain, thereby contributing higher brightness per unit area and saving planar area. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Other features and effects of the present invention will be more clearly seen in the following embodiments with reference to the accompanying drawings, in which:

[0024] Figure 1 This is a front view schematic diagram illustrating the structure of a light-emitting element disclosed in Taiwan Province of China Invention Patent Publication No. 201214659;

[0025] Figure 2 is a front view schematic diagram illustrating a first embodiment of the mixed light emitting diode device of the present invention; and

[0026] Figure 3 FIG. 1 is a front view schematic diagram illustrating a second embodiment of the light-mixing LED device of the present invention. DETAILED DESCRIPTION

[0027] See Figure 2 The first embodiment of the mixed light emitting diode device of the present invention includes a first horizontal conductive type die 1 , a second horizontal conductive type die 2 , a third horizontal conductive type die 3 , and an electrode unit 4 .

[0028] The first horizontal conducting die 1 includes a first surface 11 on which a first-type semiconductor is disposed, a second surface 12 opposite the first surface 11 and on which a second-type semiconductor is disposed, a PN junction 13 between the first and second surfaces 11, and a first through-hole 110 and two second through-holes 120 spaced apart from each other. The first through-hole 110 vertically penetrates the first surface 11 of the first-type semiconductor, the PN junction 13, and the second surface 12 of the second-type semiconductor of the first horizontal conducting die 1. The second through-hole 120 vertically penetrates the second-type semiconductor of the first horizontal conducting die 1.

[0029] The second horizontal conducting die 2 includes a first surface 21 on which a first-type semiconductor is disposed, a second surface 22 opposite to the first surface 21 and on which a second-type semiconductor is disposed, and a PN junction 23 between the first surface 21 and the second surface 22. The second horizontal conducting die 2 is spaced apart and disposed above the first horizontal conducting die 1, with the first surface 21 of the first-type semiconductor of the second horizontal conducting die 2 facing the first surface 11 of the first-type semiconductor of the first horizontal conducting die 1.

[0030] The third horizontal conducting die 3 includes a first surface 31 on which a first-type semiconductor is disposed, a second surface 32 opposite to the first surface 31 and on which a second-type semiconductor is disposed, and a PN junction 33 between the first surface 31 and the second surface 32. The third horizontal conducting die 3 is spaced apart above the first horizontal conducting die 1, with the first surface 31 of the first-type semiconductor of the third horizontal conducting die 3 facing the first surface 11 of the first-type semiconductor of the first horizontal conducting die 1.

[0031] Specifically, the first horizontal conducting die 1, the second horizontal conducting die 2, and the third horizontal conducting die 3 of the present invention are micro-LED chips after their epitaxial substrates (e.g., sapphire substrates) have been laser-lifted. The first-type semiconductor and the second-type semiconductor of the first horizontal conducting die 1, the second horizontal conducting die 2, and the third horizontal conducting die 3 are respectively a P-type semiconductor and an N-type semiconductor. Furthermore, the area of ​​the second surface 12 of the first horizontal conducting die 1 is substantially equal to the area of ​​the second surface 22 of the second horizontal conducting die 2 plus the area of ​​the second surface 32 of the third horizontal conducting die 3.

[0032] The electrode unit 4 includes a first-type electrode 41 and three second-type electrodes 42. In the first embodiment of the present invention, the first-type electrode 41 and each second-type electrode 42 is a P-type electrode and an N-type electrode respectively. Figure 2 As shown, the first type (P type) electrode 41 is electrically isolated and disposed in the first through hole 110 of the first horizontal conducting die 1, so as to simultaneously connect the first type (P type) semiconductor of the second horizontal conducting die 2 with the first type (P type) semiconductor of the first horizontal conducting die 1 and the first type (P type) semiconductor of the third horizontal conducting die 3 with the first type (P type) semiconductor of the first horizontal conducting die 1. Figure 2 Two of the three second-type (N-type) electrodes 42 are respectively disposed in corresponding second through holes 120 of the first horizontal conducting die 1, and the remaining one of the three second-type (N-type) electrodes 42 is disposed on the second surface 12 of the second-type (N-type) semiconductor of the first horizontal conducting die 1 and is located between the first-type (P-type) electrode 41 and the two second-type (N-type) electrodes 42, so as to electrically connect the second-type (N-type) semiconductor of the second horizontal conducting die 2 and the second-type (N-type) semiconductor of the first horizontal conducting die 1, and the second-type (N-type) semiconductor of the third horizontal conducting die 3 and the second-type (N-type) semiconductor of the first horizontal conducting die 1, respectively.

[0033] Preferably, the first horizontal conductive die 1, the second horizontal conductive die 2 and the third horizontal conductive die 3 can emit light sources in a first wavelength band, a second wavelength band and a third wavelength band respectively. Figure 2 As shown, in the first embodiment of the present invention, the first wavelength band of the first horizontal conducting die 1, the second wavelength band of the second horizontal conducting die 2, and the third wavelength band of the third horizontal conducting die 3 are a red (R) wavelength band, a green (G) wavelength band, and a blue (B) wavelength band, respectively. More preferably, the first horizontal conducting die 1 further comprises an insulating layer 14, and the first through hole 110 of the first horizontal conducting die 1 is defined by an inner annular surface 111 of the first horizontal conducting die 1. The insulating layer 14 is formed on the inner annular surface 111 and extends from the inner annular surface 111 to the second surface 12 of the first horizontal conducting die 1. The insulating layer 14 electrically isolates the first type (P-type) electrode 41 of the electrode unit 4 from the second type (N-type) semiconductor of the first horizontal conducting die 1.

[0034] As can be seen from the detailed description of the present invention in the above sections, the first embodiment of the present invention is a white light emitting diode device with a common anode structure.

[0035] More specifically, the first embodiment of the present invention further includes a driving substrate 5 , a light shielding wall 6 and a light-transmitting packaging body 7 .

[0036] The driving substrate 5 is disposed under the first horizontal conductive die 1 to couple the first-type electrode 41 and the second-type electrode 42 of the electrode unit 4. In the first embodiment of the present invention, the driving substrate 5 is a constant current driving substrate.

[0037] The light-shielding wall 6 surrounds the first horizontal conductive die 1, the second horizontal conductive die 2, and the third horizontal conductive die 3, exposing the second surface 22 of the second horizontal conductive die 2 and the second surface 32 of the third horizontal conductive die 3. The light-transmitting encapsulant 7 covers the first horizontal conductive die 1, the second horizontal conductive die 2, the third horizontal conductive die 3, and the light-shielding wall 6. The light-transmitting encapsulant 7 has a curved surface 71 protruding upward above the second surfaces 22 and 32 of the second horizontal conductive die 2 and the third horizontal conductive die 3, serving as a micro-lens.

[0038] See Figure 3 The second embodiment of the hybrid light-emitting diode device of the present invention is substantially the same as the first embodiment, except that the first-type semiconductor and the second-type semiconductor of the first horizontally conductive die 1, the second horizontally conductive die 2, and the third horizontally conductive die 3 are respectively an N-type semiconductor and a P-type semiconductor, and the first-type electrode 41 and each second-type electrode 42 are respectively an N-type electrode and a P-type electrode. In other words, the hybrid light-emitting diode device of the second embodiment of the present invention is a white light-emitting diode device with a common cathode architecture.

[0039] The detailed descriptions in the above paragraphs and Figure 2 and Figure 3As can be seen from the structure shown, the present invention utilizes a first through hole 110 vertically and longitudinally penetrating the first surface 11, the PN junction 13, and the second surface 12 of the first horizontal conducting type die 1 and a first-type electrode 41 disposed in the first through hole 110, and a second through hole 120 vertically and longitudinally penetrating the second-type semiconductor of the first horizontal conducting type die 1 and a second-type electrode 42 disposed in the second through hole 120 and disposed on the second surface 12 of the first horizontal conducting type die 1, so that the second horizontal conducting type die 2 and the third horizontal conducting type die 3 can be vertically disposed directly above the first horizontal conducting type die 1, so that the first-type semiconductors of the first horizontal conducting type die 1, the second horizontal conducting type die 2, and the third horizontal conducting type die 3 can share the first-type electrode 41, and the second-type semiconductors of the first horizontal conducting type die 1, the second horizontal conducting type die 2, and the third horizontal conducting type die 3 can be electrically connected to each other through the second-type electrode 42. Therefore, compared with the structures of Case 1 and Case 2 in the background art, the mixed light LED device of the embodiment of the present invention can contribute higher brightness per unit area, thereby saving plane area.

[0040] In summary, the mixed light LED device of the present invention can achieve the effect of saving planar area while contributing higher brightness per unit area, and thus can indeed achieve the purpose of the present invention.

[0041] The above description is merely an embodiment of the present invention and should not be used to limit the scope of the present invention. Any simple equivalent changes and modifications made according to the claims and description of the present invention are still within the scope of the present invention.

Claims

1. A mixed light emitting diode device, characterized in that: Include: A first horizontally conductive die includes a first surface on which a first-type semiconductor is disposed, a second surface opposite to the first surface and on which a second-type semiconductor is disposed, a PN junction between the first and second surfaces, and a first through hole and two second through holes spaced apart from each other, the first through hole vertically penetrating the first surface of the first-type semiconductor, the PN junction, and the second surface of the second-type semiconductor, and the second through holes vertically penetrating the second-type semiconductor; A second horizontal conducting die includes a first surface on which a first-type semiconductor is disposed, and a second surface opposite to the first surface and on which a second-type semiconductor is disposed. The second horizontal conducting die is spaced apart from the first horizontal conducting die, and the first surface of the first-type semiconductor of the second horizontal conducting die faces the first surface of the first-type semiconductor of the first horizontal conducting die. A third horizontal conducting die includes a first surface on which a first-type semiconductor is disposed, and a second surface opposite to the first surface and on which a second-type semiconductor is disposed. The third horizontal conducting die is spaced above the first horizontal conducting die, and the first surface of the first-type semiconductor of the third horizontal conducting die faces the first surface of the first-type semiconductor of the first horizontal conducting die. and An electrode unit includes a first-type electrode and three second-type electrodes, wherein the first-type electrode is electrically isolated and arranged in the first through hole of the first horizontal conductive grain to simultaneously connect the first-type semiconductor of the second horizontal conductive grain with the first-type semiconductor of the first horizontal conductive grain and the first-type semiconductor of the third horizontal conductive grain with the first-type semiconductor of the first horizontal conductive grain in an upper and lower direction, two of the three second-type electrodes are respectively arranged in the second through holes of the first horizontal conductive grain to respectively electrically connect the second-type semiconductor of the second horizontal conductive grain with the second-type semiconductor of the first horizontal conductive grain and the second-type semiconductor of the third horizontal conductive grain with the second-type semiconductor of the first horizontal conductive grain in an upper and lower direction, and the remaining one of the three second-type electrodes is arranged on the second surface of the second-type semiconductor of the first horizontal conductive grain and is between the first-type electrode and the two second-type electrodes.

2. The mixed light LED device according to claim 1, wherein: The first horizontal conductive die further includes an insulating layer, and the first through hole of the first horizontal conductive die is defined by the inner ring surface of the first horizontal conductive die. The insulating layer is formed on the inner ring surface and extends from the inner ring surface to the second surface of the first horizontal conductive die.

3. The mixed light emitting diode device according to claim 1, wherein: Each first-type semiconductor and each second-type semiconductor are a P-type semiconductor and an N-type semiconductor respectively, and the first-type electrode and each second-type electrode are a P-type electrode and an N-type electrode respectively.

4. The mixed light emitting diode device according to claim 1, wherein: Each first-type semiconductor and each second-type semiconductor are an N-type semiconductor and a P-type semiconductor respectively, and the first-type electrode and each second-type electrode are an N-type electrode and a P-type electrode respectively.

5. The mixed light emitting diode device according to claim 1, wherein: The mixed light LED device further includes a driving substrate, which is disposed under the first horizontal conduction type chip to couple the first type electrode and the three second type electrodes.

6. The mixed light emitting diode device according to claim 1, wherein: The mixed light LED device further includes a light shielding wall surrounding the first horizontal conductive die, the second horizontal conductive die, and the third horizontal conductive die to expose the second surface of the second horizontal conductive die and the second surface of the third horizontal conductive die.

7. The mixed light emitting diode device according to claim 6, wherein: The mixed light LED device further includes a light-transmitting package, which covers the first horizontal conductive die, the second horizontal conductive die, the third horizontal conductive die and the light-shielding wall.

8. The mixed light emitting diode device according to claim 7, characterized in that: The light-transmissive package body is provided with a curved surface protruding upward above the second surfaces of the second horizontal conductive type chip and the third horizontal conductive type chip.

9. The mixed light emitting diode device according to claim 1, wherein: The area of ​​the second surface of the first horizontal conducting die is equal to the area of ​​the second surface of the second horizontal conducting die plus the area of ​​the second surface of the third horizontal conducting die.

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