Planar magnetized spin-orbit magnetic components

Abstract

The present invention provides a planar magnetized spin-orbit magnetic component. The planar magnetized spin-orbit magnetic component includes a heavy metal layer, an upper electrode, and a magnetic tunneling junction. The magnetic tunneling junction is arranged between the heavy metal layer and the upper electrode. The magnetic tunneling junction includes a free layer and a fixed layer. The free layer is arranged on the heavy metal layer, and the free layer has a first film surface area. The fixed layer is arranged on the free layer, and the fixed layer has a second film surface area. There is a preset angle between the long axis direction of the film surface shape of the free layer and the long axis direction of the film surface shape of the fixed layer, and the first film surface area is greater than the second film surface area.

Description

Technical Field

[0001] The invention relates to a planar magnetized spin-orbit magnetic component. Background Art

[0002] Magnetic Random Access Memory (MRAM) has the advantages of fast speed, low energy consumption, high density, non-volatility, and almost unlimited read and write, and is predicted to be the mainstream of the next generation of memory. The main structure of the storage element in the magnetic memory is a stack structure composed of a fixed layer (Pined Layer) of ferromagnetic / non-magnetic metal / ferromagnetic three-layer material, a tunneling barrier layer (Tunneling Barrier Layer) and a free layer (Free Layer) of magnetic material. This stack structure can be called a magnetic tunnel junction (MTJ) component. Since the write current only passes through the selected magnetic tunnel junction component, and the magnetization reversal depends on the intensity of the write current and the intensity of the external magnetic field, the miniaturization of the magnetic tunnel junction component is actually conducive to the decrease of the write current. In theory, it will be able to solve the problems of improving write selectivity and reducing write current at the same time.

[0003] Magnetic tunneling junction devices that use the spin-orbit torque (SOT) mechanism for reading and writing can be divided into in-plane MTJ devices and perpendicular MTJ devices. If the spin-orbit torque mechanism is used to implement the magnetic memory structure, the operation speed and writing reliability can be further improved. The flipping mechanism of SOT in the in-plane MTJ device is to pass the write current into the heavy metal layer formed by ferromagnetic material. The heavy metal layer will generate spin transfer torque (Spin Transfer Torque, STT) due to the spin Hall effect. In addition, the vertical electric field at the material interface where the write current passes will generate Rashba torque (Rashba Torque, RT). Since both STT and RT torques are perpendicular to the direction of the write current and parallel to the film surface, the two torques will be summed up to become SOT, which will cause the magnetic moment of the ferromagnetic layer to flip, thereby achieving the purpose of writing the storage element. Summary of the invention

[0004] An embodiment of the present invention provides a planar magnetized spin-orbit magnetic component. By designing the film surface shapes of the free layer and the fixed layer, the spin-orbit torque will provide additional lateral torque for the magnetic moment of the free layer, thereby slightly reducing the difficulty of magnetization reversal of the magnetic moment of the free layer, thereby achieving a power saving effect.

[0005] The planar magnetized spin-orbit magnetic component of the embodiment of the present invention includes a heavy metal layer, an upper electrode and a magnetic tunneling junction. The magnetic tunneling junction is arranged between the heavy metal layer and the upper electrode. The magnetic tunneling junction includes a free layer and a fixed layer. The free layer is arranged on the heavy metal layer, and the free layer has a first film surface area. The fixed layer is arranged on the free layer, and the fixed layer has a second film surface area. There is a preset angle between the long axis direction of the film surface shape of the free layer and the long axis direction of the film surface shape of the fixed layer, and the first film surface area is greater than the second film surface area.

[0006] Based on the above, the planar magnetized spin-orbit magnetic component proposed in the embodiment of the present invention is designed to make the film surface of the free layer in the magnetic tunneling interface larger than the film surface of the fixed layer, and to make the long axis directions of the film surface shapes of the free layer and the fixed layer have a preset angle with each other. Therefore, the magnetic moment of the free layer can be more easily affected by the spin-orbit torque and adjusted. In this way, the spin-orbit torque will provide additional lateral torque to the magnetic moment vector of the free layer, thereby slightly reducing the difficulty of magnetization reversal of the magnetic moment of the free layer. In other words, the magnetic moment of the free layer of this embodiment will be more susceptible to magnetization reversal caused by the spin-orbit torque induced by the current of the heavy metal layer, so the magnitude of the write current in the heavy metal layer can be reduced, thereby achieving a power saving effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A 2 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component according to a first embodiment of the present invention.

[0008] Figure 1B yes Figure 1A Top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly.

[0009] Figure 1C yes Figure 1A Schematic diagram of the membrane surface shapes of the fixed layer and the free layer.

[0010] Figure 2 It is a side view of the structure of the planar magnetized spin-orbit magnetic component according to the first embodiment and the second embodiment of the present invention.

[0011] Figure 3A 2 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component according to a second embodiment of the present invention.

[0012] Figure 3B yes Figure 3A Top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly.

[0013] Figure 3C yes Figure 3A Schematic diagram of the membrane surface shapes of the fixed layer and the free layer.

[0014] Figure 4A 4 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component according to a third embodiment of the present invention.

[0015] Figure 4B yes Figure 4A Top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly.

[0016] Figure 4C yes Figure 4A Schematic diagram of the membrane surface shapes of the fixed layer and the free layer.

[0017] Figure 5 It is a side view of the structure of the planar magnetized spin-orbit magnetic component according to the third embodiment and the fourth embodiment of the present invention.

[0018] Fig. 6A 4 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component according to a fourth embodiment of the present invention.

[0019] Figure 6B yes Fig. 6A Top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly.

[0020] Figure 6C yes Fig. 6A Schematic diagram of the membrane surface shapes of the fixed layer and the free layer.

[0021] Figure 7 It is a schematic diagram of the shape of the free layer when the film surface shape of the fixed layer is elliptical in an embodiment of the present invention and the input current in the heavy metal layer after adjusting the preset angle.

[0022] Description of Reference Numerals

[0023] 100, 300, 400, 600: Planar magnetized spin-orbit magnetic components;

[0024] 110, 410, 610: heavy metal layer;

[0025] 120: upper electrode;

[0026] 130, 330: magnetic tunneling junction;

[0027] 131: Covering layer;

[0028] 132, 332: fixed layer;

[0029] 133: barrier layer;

[0030] 134, 334: free layer;

[0031] 134-1, 134-3: Capsular semicircular;

[0032] 134-2: Capsule-shaped rectangle;

[0033] 151, 351: magnetic moment vector of the free layer;

[0034] 152, 352: magnetic moment vector of the fixed layer;

[0035] 162, 362: annealing direction;

[0036] 440, 640: lower electrode;

[0037] 470: opening of the lower electrode;

[0038] 710, 720, 730, 740: labels;

[0039] Ic: input current;

[0040] A1: first membrane surface area;

[0041] A2: Second membrane surface area;

[0042] LD1, LD3: long axis direction of the film surface shape of the free layer;

[0043] LD2, LD4: the long axis direction of the membrane surface shape of the fixed layer;

[0044] P1: center point;

[0045] X: X-axis direction;

[0046] Y: Y-axis direction;

[0047] Z: Z-axis direction;

[0048] θ: preset angle;

[0049] LAD: long axis of capsule shape;

[0050] SAD: short axis of capsule shape;

[0051] P1: The center point of the membrane surface shape of the free layer. DETAILED DESCRIPTION

[0052] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0053] This embodiment is particularly designed for the film surface shapes and corresponding structures of the free layer and the fixed layer in the magnetic tunneling junction, so that the magnetic moment of the free layer of each embodiment of the present invention will be more susceptible to the spin-orbit torque induced by the current of the heavy metal layer and undergo magnetization reversal. The details of each embodiment are described below.

[0054] Figure 1A 1 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component 100 according to a first embodiment of the present invention. Figure 1B yes Figure 1A A top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly 100 . Figure 1C yes Figure 1A Schematic diagram of the film surface shapes of the fixed layer 132 and the free layer 134. Figure 2 is a side view of the structure of the planar magnetized spin-orbit magnetic component 100 according to the first embodiment and the second embodiment of the present invention. Figures 1A to 1C as well as Figure 2 A first embodiment of the present invention will be described.

[0055] The planar magnetized spin-track magnetic device 100 mainly includes a heavy metal layer 110, an upper electrode 120 and a magnetic tunneling junction 130. The magnetic tunneling junction 130 is disposed between the heavy metal layer 110 and the upper electrode 120. The magnetic tunneling junction 130 mainly includes a free layer 134 and a pinned layer 132.

[0056] The heavy metal layer 110 can also be called a write line. The heavy metal layer 110 obtains an input current Ic through an electrode contact to generate a spin current, so that the magnetic tunneling junction 130 undergoes a magnetization reversal. The material of the heavy metal layer 110 of this embodiment can be tantalum (Ta), platinum (Pt), tungsten (W) or an alloy of the combination of the above three.

[0057] The upper electrode 120 can also be called a bit line, which is used to read the data stored in the magnetic tunneling junction 130 in the planar magnetized spin-track magnetic device 100. The material of the upper electrode 120 is a conductive material, such as copper (Cu), aluminum (Al), tantalum (Ta) or alloys of the above elements.

[0058] The free layer 134 is disposed on the heavy metal layer 110. The fixed layer 132 is disposed on the free layer 134. The material of the fixed layer 132 is a ferromagnetic material having a planar magnetic moment, and the magnetic moment vector 152 of the fixed layer 132 is arranged parallel to the film surface. The material of the fixed layer 132 includes iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B) or an alloy of the combination of the above seven. In detail, the fixed layer 132 is, for example, a ferromagnetic / non-magnetic metal / ferromagnetic material stack composed of a lower fixed layer, a coupling layer and an upper fixed layer. The upper fixed layer and the lower fixed layer can be a single layer or a composite multilayer structure. The upper fixed layer or the lower fixed layer of the single-layer structure can be realized by, for example, ferromagnetic materials such as iron (Fe), cobalt (Co), nickel (Ni)... or alloys of these elements. The upper fixed layer or the lower fixed layer of the multi-layer composite structure can be a composite layer structure of ferromagnetic material and metal material, such as a composite layer structure composed of elements such as cobalt (Co) / platinum (Pt), cobalt (Co) / nickel (Ni), cobalt (Co) / palladium (Pd)...

[0059] The free layer 134 is a memory layer in the planar magnetized spin-orbit magnetic component 100. The heavy metal layer 110 can receive an input current Ic from the electrode contact of the planar magnetized spin-orbit magnetic component 100. This input current Ic will flow through the heavy metal layer 110 to generate a variety of spin currents with different directions due to the spin Hall effect (SHE), thereby generating a combined torque to flip the magnetic moment of the free layer 134 to achieve the purpose of data reading and writing. The material of the free layer 134 is a ferromagnetic material with horizontal anisotropy. The magnetic moment of the free layer 134 is determined by the shape of the free layer, that is, the direction of the magnetic moment of the free layer will be determined according to the long axis direction in the shape of the free layer, and the magnetic moment vector of the free layer is arranged parallel to the film surface. The ferromagnetic material of the free layer 134 can be iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B) or alloys of these elements, such as CoFeB, NF, FeB...etc. The free layer 134 may be a single layer structure or a multi-layer composite structure. If the free layer is a composite structure formed by multiple layers of ferromagnetic materials, the materials of the multi-layer composite structure may be a composite layer structure composed of elements such as cobalt (Co) / platinum (Pt), cobalt (Co) / nickel (Ni), cobalt (Co) / palladium (Pd), etc.

[0060] The magnetic tunneling junction 130 of the present embodiment also includes a covering layer 131 and a barrier layer 133. The covering layer 131 is disposed between the upper electrode 120 and the fixed layer 132. The barrier layer 133 is disposed between the free layer 134 and the fixed layer 132. The barrier layer 133 may have a predetermined thickness obtained through experiments, thereby effectively isolating the spin current transmission of the upper and lower layers of metal or ferromagnetic materials, so that the operating mechanism of each layer can be simple and does not affect each other. The barrier layer 133 of the present embodiment may be an insulating material that has magnetic tunneling conditions at a specific thickness. These insulating materials may be magnesium oxide, aluminum oxide, or a combination of the two. The covering layer 131 and the fixed layer 132 of the present embodiment have the same film surface shape and film surface area, and the barrier layer 133 and the free layer 134 have the same film surface shape and film surface area, such as Figure 1A shown.

[0061] For the convenience of explanation, coordinate axes X, Y, and Z are set in the drawings of the various embodiments of the present invention to facilitate the subsequent description. Figure 1B and Figure 1C The X-axis direction is the extension direction of the heavy metal layer 110, the Y-axis direction is the extension direction of the upper electrode 120, the plane formed by the X-axis direction and the Y-axis direction is the film surface of each layer (such as the upper electrode 120, the heavy metal layer 110, the fixed layer 132 and the free layer 134), and the Z-axis direction is the direction perpendicular to the film surface. The film surface of each layer is parallel to the XY plane. In this embodiment, the transmission direction of the input current Ic is the positive X-axis direction.

[0062] Figure 1B and Figure 1C The fixed layer 132 and the free layer 134 in the magnetic tunneling junction 130 respectively represent their own positions and film surface shapes. This embodiment is particularly designed for the film surface shapes and corresponding structures of the free layer 134 and the fixed layer 132 in the magnetic tunneling junction 130, so that the magnetic moment of the free layer of each embodiment of the present invention will be more susceptible to the spin-orbit torque caused by the current of the heavy metal layer and undergo magnetization reversal. In detail, in this embodiment, the film surface shape of the free layer 134 is one of an ellipse and a capsule, and the film surface shape of the fixed layer 132 is an ellipse. Both the ellipse and the capsule have a major axis and a minor axis.

[0063] The "capsule form" is described in detail here. Figure 1B and Figure 1CThe film surface shape of the free layer 134 is presented in a capsule shape. In this embodiment, the capsule shape of the free layer 134 is formed by combining two semicircles 134-1 and 134-3 and a rectangle 134-2. In this embodiment of the present invention, the line between the two points with the longest distance in the capsule shape of the free layer 134 is called the long axis LAD of the capsule shape, and the long axis LAD passes through the center point of the capsule-shaped rectangle 134-2 (that is, the center point P1 of the film surface shape of the free layer). On the other hand, in this embodiment, the line passing through the center point of the capsule-shaped rectangle 134-2 (that is, the center point P1 of the film surface shape of the free layer) and parallel to the joint between the semicircle 134-1 or 134-3 and the rectangle 134-2 is called the short axis SAD of the capsule shape. In other words, both the long axis LAD and the short axis SAD of the capsule shape will pass through the center point P1 of the film surface shape of the free layer. The direction corresponding to the long axis LAD is Figure 1C The long axis direction LD1.

[0064] In this embodiment, the length of the long axis LAD can be the diameter of the semicircle 134-1 or 134-3 plus the side of the rectangle 134-2 that does not fit the semicircle 134-1 or 134-3 ( Figure 1B and Figure 1C In this embodiment, the length of the short axis SAD may be the diameter of the semicircle 134-1 or 134-3.

[0065] The capsule shape in this embodiment is formed by combining two semicircles 134-1 and 134-3 with a rectangle 134-2. In other embodiments, it can also be formed by combining two ellipses with a rectangle. If the capsule shape is formed by combining two semiellipses with a rectangle, the length of the major axis of the capsule shape is the length of the major axis of the two semiellipses plus the length of the side of the rectangle that does not fit the two semiellipses; the length of the minor axis of the capsule shape is equal to the length of the minor axis of the two semiellipses.

[0066] The free layer 134 of this embodiment has a first film surface area A1, and the fixed layer 132 has a second film surface area A2, and the first film surface area A1 is larger than the second film surface area A2. The center point of the film surface shape of the free layer 134 of this embodiment is the same as the center point of the film surface shape of the fixed layer 132 (such as Figure 1C The center point P1 of the free layer can overlap each other. The embodiment can also make the center point of the film surface shape of the free layer different from the center point of the film surface shape of the fixed layer.

[0067] By design, there is a preset angle θ between the long axis direction LD1 of the film surface shape of the free layer 134 of this embodiment and the long axis direction LD2 of the film surface shape of the fixed layer 132. In this way, the spin-orbit torque will provide an additional lateral torque for the magnetic moment vector 151 of the free layer 134, thereby slightly reducing the difficulty of magnetization reversal of the magnetic moment of the free layer 134. In this embodiment, it is preferred that the absolute value of the preset angle θ is greater than zero and less than 45 degrees. If the absolute value of the preset angle θ is greater than 45 degrees, the additional lateral torque provided by the spin-orbit torque is less obvious, which will cause the magnetization reversal of the free layer to be more unstable. In other words, if the absolute value of the preset angle θ is greater than 45 degrees, the free layer may undergo an unexpected magnetization reversal. The preset angle of this embodiment is not equal to 0 and 90 degrees.

[0068] In this embodiment, the magnetic moment vector 152 of the fixed layer 132 of this embodiment is the same as the long axis direction LD2 of the film surface shape of the free layer 134. When the fixed layer 132 is annealed in the semiconductor manufacturing process of the planar magnetized spin-track magnetic component 100, this embodiment is designed so that the annealing direction 162 is carried out along the long axis direction LD2 of the film surface shape of the free layer 132, thereby determining / fixing the magnetic moment vector 152 of the fixed layer 132. In detail, the process of manufacturing a planar magnetized spin-track magnetic component or a related magnetoresistive random access memory (MRAM) using a semiconductor process is as follows. The substrate is coated, magnetically annealed (field anneal), masked or patterned, etched, etc. using physical vapor deposition (PVD) technology. The above steps may be performed alternately. After the above steps are completed, the substrate will undergo device testing and encapsulation, thereby completing the manufacturing of the planar magnetized spin-track magnetic component 100. The annealing direction described in this embodiment is to heat up or cool down the substrate at a specific temperature during the magnetic annealing step in the semiconductor process, so as to fix the magnetic moment vector of a certain level component.

[0069] In the first embodiment, the cover layer 131 and the fixed layer 132 are etched simultaneously in the semiconductor process, while the barrier layer 133 and the free layer 134 are etched simultaneously at another time point in the semiconductor process. Therefore, the film surface shapes of the cover layer 131 and the fixed layer 132 are the same, and the film surface shapes of the barrier layer 133 and the free layer 134 are the same. The film surface shapes of the cover layer 131 and the fixed layer 132 are different from the film surface shapes of the free layer 134 and the barrier layer 133. In the etching process of the semiconductor process of this embodiment, if the barrier layer 133 is etched together with the cover layer 131 and the fixed layer 132 at the same time, since part of the free layer 134 is not covered by the barrier layer 133 and is exposed, the magnetism of the part of the free layer 134 not covered by the barrier layer 133 may be lost, so that the free layer 134 cannot provide additional flipping torque by shape anisotropy. Therefore, in order to avoid the aforementioned situation, in this embodiment, the barrier layer 133 and the free layer 134 are etched simultaneously, so that the film surfaces of the barrier layer 133 and the free layer 134 are the same.

[0070] Here with Figure 2 and FIG. 3A to FIG. 3C The second embodiment of the present invention is described. The component 100 of the first embodiment and the component 300 of the second embodiment have the same structure in each layer in the side view. Figure 2 A side view of a planar magnetized spin-orbit magnetic assembly 300 is presented. Figure 3A 1 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component 300 according to a second embodiment of the present invention. Figure 3B yes Figure 3A A top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly 300 . Figure 3C yes Figure 3A Schematic diagram of the film surface shapes of the fixed layer 332 and the free layer 334.

[0071] The materials and functions of each layer component in the first embodiment and the second embodiment are the same. The difference between the first embodiment and the second embodiment is that the position configuration of the free layer 334 and the fixed layer 332 in the planar magnetized spin-track magnetic component 300 is different from the position configuration of the free layer 134 and the fixed layer 132 in the planar magnetized spin-track magnetic component 100. In particular, the long axis direction LD3 of the film surface shape of the free layer 334 in the second embodiment is parallel to the Y-axis direction and the long axis direction LD4 of the film surface shape of the fixed layer 332 is not parallel to the Y-axis direction, while the long axis direction LD1 of the film surface shape of the free layer 134 in the first embodiment is not parallel to the Y-axis direction and the long axis direction LD2 of the film surface shape of the fixed layer 132 is parallel to the Y-axis direction. The materials and functions of the free layer 334 and the fixed layer 332 of the planar magnetized spin-track magnetic component 300 refer to the free layer 134 and the fixed layer 132 of the planar magnetized spin-track magnetic component 100 in the aforementioned embodiment. The magnetic moment vector 352 of the fixed layer 332 is parallel to the annealing direction 362 in the semiconductor process. The magnetic moment vector 351 of the free layer 334 is parallel to the long axis direction LD3 of the film surface shape of the free layer 334 .

[0072] In the first and second embodiments, the relationship between the long axis directions LD1 and LD3 of the film surface shape of the free layers 134 and 334 and the long axis directions LD2 and LD4 of the film surface shape of the fixed layers 132 and 332 is a positive preset angle θ. That is, the long axis directions LD1 and LD3 are respectively located on the left side of the long axis directions LD2 and LD4. The user who applies each embodiment of the present invention can also make the relationship between the long axis directions LD1 and LD3 of the film surface shape of the free layers 134 and 334 and the long axis directions LD2 and LD4 of the film surface shape of the fixed layers 132 and 332 in the first and second embodiments be a negative preset angle θ. That is, in other embodiments, the long axis directions LD1 and LD3 can be respectively located on the right side of the long axis directions LD2 and LD4. That is to say, the long-axis direction LD1 of the film surface shape of the free layer 134 in the first embodiment and the long-axis direction LD2 of the film surface shape of the fixed layer 132 can be interchanged with each other, and the long-axis direction LD3 of the film surface shape of the free layer 334 in the second embodiment and the long-axis direction LD4 of the film surface shape of the fixed layer 332 can be interchanged with each other, so that the film surface shapes of the free layer 134 and the fixed layer 132 are adjusted by adjusting the angle in the structure to produce another embodiment that conforms to the present invention.

[0073] The free layers 134 and 334 in the first and second embodiments have a capsule shape. The user of this embodiment may also design the free layers 134 and 334 in the first and second embodiments to have an elliptical shape.

[0074] Here with FIG. 4A to FIG. 4C and Figure 5A third embodiment of the present invention will be described. Figure 4A 4 is a schematic structural diagram of a planar magnetized spin-orbit magnetic component 400 according to a third embodiment of the present invention. Figure 4B yes Figure 4A A top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly 400 . Figure 4C yes Figure 4A Schematic diagram of the film surface shape of the fixed layer 132 and the free layer 134 in the first embodiment. The components with the same number in the first embodiment and the third embodiment are all the same components, and both have the same materials and the same functions. The main difference between the first embodiment and the third embodiment is that the heavy metal layer 410 and the free layer 134 of the planar magnetized spin-orbit magnetic component 400 have the same film surface shape and film surface area, and the planar magnetized spin-orbit magnetic component 400 also includes a lower electrode 440. In the semiconductor process, the heavy metal layer 410 and the free layer 134 can be etched at the same time, so that the heavy metal layer 410 and the free layer 134 have the same film surface shape and film surface area. For the material and function of the heavy metal layer 410 of the planar magnetized spin-orbit magnetic component 400, please refer to the heavy metal layer 110 of the planar magnetized spin-orbit magnetic component 100 in the aforementioned embodiment.

[0075] The lower electrode 440 is disposed below the heavy metal layer 410. The two lower electrodes 440 are disposed on opposite sides of the heavy metal layer 410, respectively. The lower electrode 410 of the present embodiment includes an opening 470. The opening 470 is disposed below the heavy metal layer 410. The width H1 of the opening 470 in a direction parallel to the short axis SAD of the heavy metal layer 410 is smaller than the length of the short axis SAD of the film surface shape of the heavy metal layer 410, the width of the opening 470 is smaller than the short axis width of the free layer 134 and the film surface shape of the heavy metal layer 410, and the extension direction of the opening 470 is parallel to the long axis direction LD1 of the film surface shape of the free layer 134 (e.g., Figure 4B and Figure 4C The material of the lower electrode 440 is a conductive material. For example, the material of the lower electrode can be copper (Cu), aluminum (Al), tantalum (Ta) or an alloy of the above elements. The thickness of the lower electrode 440 in this embodiment can be 1 kilo angstrom. To 6 kiloangstroms The user of this embodiment can adjust the thickness of the bottom electrode 440 according to the requirement. Therefore, the input current Ic flows through one end of the bottom electrode 440 through the heavy metal layer 410 and reaches the other end of the bottom electrode 440, thereby realizing the function of the heavy metal layer 410.

[0076] The structures of each layer in the side view are the same, so Figure 2 A side view of a planar magnetized spin-orbit magnetic assembly 300 is presented.

[0077] Here with Figure 5and FIG. 6A to FIG. 6C The fourth embodiment of the present invention is described. The planar magnetized spin-orbit magnetic component 400 of the third embodiment and the planar magnetized spin-orbit magnetic component 600 of the fourth embodiment have the same structure in each layer in the side view. Figure 5 A side view of a planar magnetized spin-orbit magnetic assembly 600 is presented. Fig. 6A is a schematic structural diagram of a planar magnetized spin-orbit magnetic component 600 according to a fourth embodiment of the present invention. Figure 6B yes Fig. 6A A top view of the structure of the mid-plane magnetized spin-orbit magnetic assembly 600 . Figure 6C yes Fig. 6A Schematic diagram of the film surface shapes of the fixed layer 332 and the free layer 334.

[0078] The materials and functions of the components of each layer in the second embodiment and the fourth embodiment are the same. The difference between the second embodiment and the fourth embodiment is that the heavy metal layer 610 and the free layer 334 of the planar magnetized spin-orbit magnetic component 600 have the same film surface shape and film surface area, and the planar magnetized spin-orbit magnetic component 600 also includes a lower electrode 640. In the semiconductor process, the heavy metal layer 610 and the free layer 334 can be etched at the same time, so that the heavy metal layer 610 and the free layer 334 have the same film surface shape and film surface area. The materials and functions of the heavy metal layer 610 of the planar magnetized spin-orbit magnetic component 600 refer to the heavy metal layer 110 of the planar magnetized spin-orbit magnetic component 100 in the aforementioned embodiment.

[0079] The lower electrode 640 is disposed below the heavy metal layer 610. The two lower electrodes 640 are disposed on opposite sides of the heavy metal layer 610. The lower electrode 640 of this embodiment includes an opening 670. The opening 670 is disposed below the heavy metal layer 610. The width of the opening 670 in a direction parallel to the short axis SAD of the heavy metal layer 610 is smaller than the length of the short axis SAD of the film surface shape of the heavy metal layer 610, and the extension direction of the opening 670 is parallel to the long axis direction LD3 of the film surface shape of the free layer 334 (e.g., Figure 6B and Figure 6C The materials and functions of the heavy metal layer 610 and the bottom electrode 640 of the planar magnetized spin-track magnetic component 600 refer to the heavy metal layer 410 and the bottom electrode 440 of the planar magnetized spin-track magnetic component 400 in the third embodiment.

[0080] In the third and fourth embodiments, the relationship between the long axis directions LD1 and LD3 of the film surface shape of the free layers 134 and 334 and the long axis directions LD2 and LD4 of the film surface shape of the fixed layers 132 and 332 is a positive preset angle θ. That is, the long axis directions LD1 and LD3 are respectively located on the left side of the long axis directions LD2 and LD4. The user who applies each embodiment of the present invention can also make the relationship between the long axis directions LD1 and LD3 of the film surface shape of the free layers 134 and 334 and the long axis directions LD2 and LD4 of the film surface shape of the fixed layers 132 and 332 in the third and fourth embodiments be a negative preset angle θ. That is, in other embodiments, the long axis directions LD1 and LD3 can be respectively located on the right side of the long axis directions LD2 and LD4. That is to say, the long-axis direction LD1 of the film surface shape of the free layer 134 in the third embodiment and the long-axis direction LD2 of the film surface shape of the fixed layer 132 can be interchanged with each other, and the long-axis direction LD3 of the film surface shape of the free layer 334 in the fourth embodiment and the long-axis direction LD4 of the film surface shape of the fixed layer 332 can be interchanged with each other, so that the film surface shapes of the free layer 134 and the fixed layer 132 are adjusted by adjusting the angle in the structure to produce another embodiment that conforms to the present invention.

[0081] The free layers 134 and 334 in the third and fourth embodiments have a capsule-shaped film surface. The user of this embodiment may also design the free layers 134 and 334 in the third and fourth embodiments to have an elliptical film surface shape.

[0082] Figure 7 It is a schematic diagram of the shape of the free layer when the film surface shape of the fixed layer is elliptical in an embodiment of the present invention and the input current in the heavy metal layer after adjusting the preset angle. Figure 7 These are the results obtained from simulations at an absolute temperature (T) of 300K.

[0083] Figure 7 The vertical axis represents the number of amperes (A) per square centimeter to indicate how many amperes of input current are needed in the heavy metal layer to cause the magnetic moment vector in the free layer to undergo a magnetization reversal. Figure 7 The reference numeral 710 indicates how many amperes of input current must be input into the heavy metal layer to cause the magnetic moment vector in the free layer to undergo magnetization reversal when the fixed layer and the free layer are both designed to be elliptical without a preset angle θ (i.e., the default angle θ is zero degrees). Figure 7 The middle number 720 indicates how many amperes of input current must be input into the heavy metal layer to cause the magnetic moment vector in the free layer to undergo magnetization reversal when the fixed layer and the free layer are both designed to be elliptical with a preset angle θ (for example, the preset angle θ is 10 degrees). Figure 7The reference numeral 730 indicates how many amperes of input current must be input into the heavy metal layer to cause the magnetic moment vector in the free layer to undergo magnetization reversal when there is no preset angle θ (i.e., the default angle θ is zero degrees) and the fixed layer is elliptical and the membrane surface shape of the free layer is designed to be capsule-shaped. Figure 7 The middle number 740 indicates how many amperes of input current must be input into the heavy metal layer to cause the magnetic moment vector in the free layer to undergo magnetization reversal when there is a preset angle θ (for example, the preset angle θ is 10 degrees) and the fixed layer is elliptical and the membrane surface shape of the free layer is designed to be capsule-shaped.

[0084] Depend on Figure 7 It can be seen that when the preset angle θ is 10 degrees, the ampere of the input current required for the heavy metal layers in labels 720 and 740 are lower than the ampere of the input current required for the heavy metal layers in labels 710 and 730 when there is no preset angle θ (the default angle θ is zero degrees).

[0085] In summary, the planar magnetized spin-orbit magnetic component proposed in the embodiment of the present invention is designed to have a free layer in the magnetic tunneling interface with an elliptical or capsule-shaped film surface shape, a fixed layer with an elliptical film surface shape, a free layer with a larger film surface than the fixed layer, and a preset angle between the long axis directions of the free layer and the fixed layer. Therefore, the magnetic moment of the free layer can be more easily affected by the spin-orbit torque and adjusted. In other words, due to the anisotropy of the film surface shapes of the fixed layer and the free layer, and the annealing directions of the free layer and the fixed layer in the semiconductor process are both the long axis directions of the film surface shape of the fixed layer. In this way, the spin-orbit torque will provide additional lateral torque to the magnetic moment vector of the free layer, thereby slightly reducing the difficulty of magnetization reversal of the magnetic moment of the free layer. In other words, the magnetic moment of the free layer of this embodiment will be more susceptible to magnetization reversal caused by the spin-orbit torque caused by the current of the heavy metal layer, so the magnitude of the write current in the heavy metal layer can be reduced, thereby achieving a power saving effect.

[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A planar magnetized spin-orbit magnetic component, It is characterized in that include: Heavy metal layer; Upper electrode; as well as A magnetic tunneling junction is disposed between the heavy metal layer and the upper electrode. Wherein, the magnetic tunneling junction comprises: A free layer is disposed on the heavy metal layer, wherein the free layer has a first film surface area; and A fixed layer is disposed on the free layer, and the fixed layer has a second film surface area. There is a preset angle between the long axis direction of the film surface shape of the free layer and the long axis direction of the film surface shape of the fixed layer, and the first film surface area is larger than the second film surface area, and the absolute value of the preset angle is greater than zero and less than 45 degrees; The film surface shape of the free layer is one of an ellipse shape and a capsule shape.

2. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that The film surface of the fixed layer is in an elliptical shape.

3. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that Also includes: The barrier layer is disposed between the free layer and the fixed layer.

4. The planar magnetized spin-orbit magnetic component according to claim 3, It is characterized in that The barrier layer is made of magnesium oxide, aluminum oxide or a combination thereof.

5. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that Also includes: The covering layer is arranged between the upper electrode and the fixing layer.

6. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that Also includes: The lower electrode is arranged below the heavy metal layer, and the lower electrode is arranged on two opposite sides of the heavy metal layer respectively.

7. The planar magnetized spin-orbit magnetic component according to claim 6, It is characterized in that The lower electrode includes an opening, which is arranged below the heavy metal layer. The width of the opening in a direction corresponding to the short axis of the heavy metal layer is smaller than the length of the short axis of the film surface shape of the heavy metal layer, and the extension direction of the opening is parallel to the long axis direction of the film surface shape of the free layer. 8 . The planar magnetized spin-orbit magnetic component according to claim 6 , wherein the material of the lower electrode is an alloy of copper, aluminum, tantalum or a combination of the above elements.

9. The planar magnetized spin-orbit magnetic component according to claim 6, It is characterized in that The heavy metal layer and the free layer have the same film surface area and film surface shape.

10. The planar magnetized spin-orbit magnetic component according to claim 6, It is characterized in that The heavy metal layer and the free layer are etched simultaneously in a semiconductor manufacturing process.

11. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that The heavy metal layer obtains input current through the electrode contact to generate spin current, so that the magnetic tunneling junction undergoes magnetization reversal. The material of the heavy metal layer is tantalum, platinum, tungsten or an alloy of the combination of the three.

12. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that The material of the free layer is a ferromagnetic material with horizontal anisotropy, and the magnetic moment vector of the free layer is arranged parallel to the film surface.

13. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that The material of the fixed layer is a ferromagnetic material with a planar magnetic moment, and the magnetic moment vector of the fixed layer is arranged parallel to the film surface.

14. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that The material of the fixed layer includes iron, cobalt, nickel, gadolinium, terbium, dysprosium, boron or an alloy of the seven above.

15. The planar magnetized spin-orbit magnetic component according to claim 1, It is characterized in that In a semiconductor process for manufacturing the planar magnetized spin-orbit magnetic component, an annealing direction of the fixed layer is the same as a long axis direction of the film surface shape of the fixed layer.

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