Graphic design method and system, mask combination product, equipment and medium

Abstract

A graphic design method and system, mask assembly, device, and storage medium thereof, wherein the graphic formation method includes double patterning. The graphic design method comprises: providing an initial graphic, including multiple initial patterns; setting a critical split line width and a critical split spacing; setting a reference edge pattern whose projections overlap along a second direction; obtaining multiple test patterns based on the critical split line width and the critical split spacing, as well as the overlap of the projections along the second direction between the initial pattern and adjacent initial patterns or the reference edge pattern, wherein the test patterns and the reference edge pattern form a closed loop; obtaining the number of test patterns as a first value; obtaining the number of adjacent initial patterns in the closed loop whose spacings are greater than the minimum line width of the decomposition pattern as a second value; and determining whether the sum of the first and second values ​​is an odd number. Embodiments of the present invention determine whether the initial graphic can be double patterned, which is beneficial for avoiding double patterning conflicts.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a graphic design method and system thereof, a mask assembly, a device, and a storage medium. Background Art

[0002] Integrated circuit (IC) technology continues to improve, often by scaling down device geometries to achieve lower manufacturing costs, higher device density, higher speeds, and better performance. Photolithography is a commonly used patterning method in semiconductor manufacturing. However, photolithography limits the minimum pitch of the resulting patterns. Traditional single-exposure photolithography processes are no longer able to meet device scaling requirements, thus limiting the development of integrated circuits towards smaller sizes and higher densities.

[0003] To address the resolution limitations of traditional photolithography, double patterning (DP) has been proposed to achieve smaller pattern sizes. This method, while utilizing the resolution limitations of traditional photolithography, can triple the density of circuits. Double patterning decomposes a high-density pattern into two separate, lower-density patterns. One of the most widely adopted double patterning solutions is double exposure / double etch (LELE). LELE, short for lithography-etch-lithography-etch (LE-LE), splits a given pattern into two less dense patterns. The first-layer pattern is transferred to the underlying hard mask by exposing the photoresist during the photolithography process and then etching the hard mask. The second-layer pattern is then aligned with the first and transferred to the hard mask through a second photolithography exposure and etching step. Finally, etching is performed on the substrate, resulting in a pattern with twice the density of the original.

[0004] Double patterning technology splits the target pattern according to defined rules, ensuring that the split patterns do not conflict. Double patterning can affect the accuracy and quality of subsequent lithography processes, ultimately impacting the smooth progress of the entire semiconductor process and reducing unnecessary waste.

[0005] However, double patterning technology currently still faces significant challenges. Summary of the Invention

[0006] The problem solved by the embodiments of the present invention is to provide a graphic design method and its system, mask combination, device and storage medium, which can determine whether the initial graphic can be double-patterned, which is conducive to avoiding double-patterning conflicts and improving the friendliness of double-patterning.

[0007] To solve the above problems, an embodiment of the present invention provides a graphic design method, wherein the graphic forming method includes double patterning, including: providing an initial graphic, wherein the initial graphic includes a plurality of initial patterns spaced apart from each other, wherein the initial patterns extend along a first direction, and a direction perpendicular to the first direction is a second direction; setting a critical splitting line width and a critical splitting spacing corresponding to the initial pattern based on a double patterning splitting rule; setting a reference edge pattern, wherein the projection of the reference edge pattern along the second direction overlaps; and determining a critical splitting line width and a critical splitting spacing, and a critical splitting spacing between the initial pattern and the adjacent initial pattern located between the reference edge patterns. The projections of the patterns or reference edge patterns along the second direction overlap to obtain a plurality of patterns to be measured, and the plurality of patterns to be measured and the reference edge pattern form a closed loop; the number of the patterns to be measured is obtained as a first value; the double patterning splitting rule includes a minimum line width for decomposing the pattern; the spacing between adjacent patterns to be measured in the closed loop, and the spacing between the patterns to be measured and adjacent reference edge patterns, are obtained, which are greater than the minimum line width, as a second value; it is determined whether the sum of the first value and the second value is an odd number; when the sum of the first value and the second value is an even number, it is determined that the initial pattern can be double patterned.

[0008] Optionally, the graphic design method also includes: when the sum of the first value and the second value is an odd number, judging whether the closed loop contains a pattern to be tested corresponding to the critical splitting spacing; when the closed loop contains a pattern to be tested corresponding to the critical splitting spacing, using the pattern to be tested corresponding to the critical splitting spacing as a pattern to be processed; and moving the pattern to be processed along the second direction and in the direction of reducing the critical splitting spacing by a distance equal to the minimum line width of the decomposed pattern.

[0009] Optionally, the minimum line width of the decomposition pattern is equal to the value of the critical splitting line width.

[0010] Optionally, based on the double graphic splitting rule, the step of setting the critical splitting line width and critical splitting spacing corresponding to the initial pattern includes: the double graphic splitting rule includes the minimum line width and minimum spacing of the decomposed pattern; the sum of the minimum spacing of the decomposed pattern and twice the minimum line width is set as the critical splitting spacing corresponding to the initial pattern; and the minimum spacing of the decomposed pattern is set as the critical splitting line width corresponding to the initial pattern.

[0011] Optionally, in the closed loop, the line width of the pattern to be measured is less than or equal to the critical split line width, and the spacing between adjacent patterns to be measured and the spacing between the pattern to be measured and adjacent reference edge patterns are less than or equal to the critical split spacing.

[0012] Optionally, the initial graphic is an initial active area graphic, and the initial pattern is an initial active area pattern.

[0013] Correspondingly, an embodiment of the present invention further provides a mask assembly, which is used to form a pattern designed by the pattern design method provided by an embodiment of the present invention.

[0014] Optionally, the graphic design system also includes: an analysis unit, which is used to determine whether the closed loop contains a pattern to be tested corresponding to the critical splitting spacing when the judgment unit determines that the sum of the first value and the second value is an odd number; a marking unit, which is used to mark the pattern to be tested corresponding to the critical splitting spacing as a pattern to be processed when the closed loop contains a pattern to be tested corresponding to the critical splitting spacing; and an adjustment unit, which is used to move the pattern to be processed by a distance equal to the minimum line width of the decomposed pattern along the second direction and in the direction of reducing the critical splitting spacing.

[0015] Optionally, the double patterning splitting rule includes a minimum line width and a minimum spacing of the decomposed pattern; the configuration unit includes: a critical splitting spacing configurator, used to set the sum of the minimum spacing of the decomposed pattern and twice the minimum line width as the critical splitting spacing of the initial pattern; a critical splitting line width configurator, used to set the minimum spacing of the decomposed pattern to the critical splitting line width of the initial pattern.

[0016] Accordingly, an embodiment of the present invention further provides a graphic design system, wherein the method for forming the graphic includes double graphicization, including: a providing unit for providing an initial graphic, wherein the initial graphic includes a plurality of spaced initial patterns, wherein the initial pattern extends along a first direction, and a direction perpendicular to the first direction is a second direction; a configuration unit for setting a critical splitting line width and a critical splitting spacing corresponding to the initial pattern based on a double graphicization splitting rule; a reference edge pattern setting unit for setting a reference edge pattern whose projections overlap along the second direction; a closed loop acquisition unit for obtaining a closed loop based on the critical splitting line width and the critical splitting spacing, and a closed loop between the reference edge patterns and between the initial pattern and the adjacent initial pattern or the reference edge pattern. The projections along the second direction overlap to obtain a plurality of patterns to be tested, and the plurality of patterns to be tested and the reference edge pattern form a closed loop; a unit for obtaining the number of patterns to be tested is used to obtain the number of patterns to be tested, and output is a first value; a spacing acquisition unit, the double patterning splitting rule includes a minimum line width for decomposing the pattern, the spacing acquisition unit is used to obtain the spacing between adjacent patterns to be tested in the closed loop, and the spacing between the patterns to be tested and adjacent reference edge patterns, the number of which is greater than the minimum line width, and output is a second value; a judgment unit is used to judge whether the sum of the first value and the second value is an odd number; when the sum of the first value and the second value is an even number, the judgment unit is used to judge whether the initial pattern can be double patterned.

[0017] Accordingly, an embodiment of the present invention also provides a device comprising at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the graphic design method provided by an embodiment of the present invention.

[0018] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the graphic design method provided by the embodiment of the present invention.

[0019] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0020] In the graphic design method provided by an embodiment of the present invention, the decomposition pattern corresponding to the double graphicization is located on the interval between the initial patterns along the second direction, and the line width of the pattern to be tested in the closed loop is less than or equal to the critical splitting line width. Therefore, the first value represents the number of color changes of the decomposition pattern on both sides of the pattern to be tested, which correspondingly represents the number of partial intervals between the decomposition patterns that violate the splitting rule. When the spacing between adjacent patterns to be tested in the closed loop and the spacing between the pattern to be tested and the adjacent reference edge pattern are greater than the minimum line width of the decomposition pattern, the decomposition pattern needs to be split into two masks at the interval between adjacent patterns to be tested or the interval between the pattern to be tested and the adjacent reference edge pattern. The second value represents the number of color changes of the decomposition pattern at the interval between the pattern to be tested and the adjacent pattern to be tested or the reference edge pattern, which correspondingly represents the number of remaining intervals between the decomposition patterns that violate the splitting rule. The sum of the first value and the second value is the number of intervals between the double graphicized decomposition patterns in the closed loop that violate the splitting rule. According to the odd ring (Odd ring According to the principle of "split cycle", when irregular intervals between polygons in double patterning form an odd cycle, a split conflict will occur. Therefore, the graphic design method determines whether the sum of the first value and the second value is an odd number, and accordingly determines whether the initial graphic can be double patterned. Moreover, the graphic design method provided in the embodiment of the present invention determines whether the initial graphic can be double patterned based on the initial graphic, so that the initial graphic that cannot be double patterned can be detected in advance before double patterning, so that the initial graphic can be adjusted accordingly in time. This is conducive to pre-empting the problem and avoiding the need to adjust the double patterning split conflict in subsequent processes, which is conducive to saving process steps and process time, and further conducive to improving the efficiency of the double patterning process and shortening the process cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 and Figure 2 It is a structural diagram of the layer to be cut;

[0022] Figure 3 yes Figure 1 and Figure 2 Schematic diagram of the corresponding dual patterning scheme;

[0023] Figure 4 is a flow chart of an embodiment of a graphic design method provided by an embodiment of the present invention;

[0024] Figure 5 is a schematic diagram of an initial graph provided by an embodiment of the present invention;

[0025] Figure 6 yes Figure 5 Schematic diagram of the decomposition pattern of the double pattern corresponding to the initial pattern shown;

[0026] Figure 7 Yes Figure 5 Schematic diagram of adjusting the position of the pattern to be processed in the initial pattern and the decomposition pattern corresponding to the double patterning;

[0027] Figure 8 It is a schematic diagram of adjusting the position of a pattern to be processed in another initial pattern according to an embodiment of the present invention, and a decomposed pattern corresponding to double patterning;

[0028] Figure 9 This is a functional block diagram of an embodiment of a graphic design system provided by an embodiment of the present invention;

[0029] Figure 10 yes Figure 9 A functional block diagram of an embodiment of a configuration unit in FIG.

[0030] Figure 11 It is a hardware structure diagram of an embodiment of a device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0031] As can be seen from the background art, double patterning still has great challenges. Specifically, the following uses double patterning to split the mask pattern of a fin cut as an example for explanation.

[0032] Specifically, refer to Figure 1 and Figure 2 , Figure 1 For top view, Figure 2 for Figure 1 The cross-sectional view at the cc position schematically illustrates the substrate 10 and the layer to be cut 20 located on the substrate 10. The layer to be cut 20 can be a mask sidewall, or a target layer formed by transferring the pattern of the mask sidewall to the layer to be etched. As an example, the layer to be cut 20 is a mask sidewall 20, which is used as a mask for forming a fin. The mask sidewall 20 is along a first direction (such as Figure 1 The direction perpendicular to the first direction is the second direction (as shown in the x direction in FIG). Figure 1 shown in the y direction).

[0033] After forming the mask spacer 20, it is usually desired to Figure 1 and Figure 2 The mask sidewall 20 is cut. Figure 3, schematically illustrates a mask pattern for cutting mask sidewall spacers 20. Here, a substrate 10 includes an active area 1, and the mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first cutting patterns 2 extending along a first direction, and the second mask pattern includes a second cutting pattern 3. Subsequently, the mask sidewall spacers 20 below the first cutting patterns 2 and the second cutting patterns 3 are cut. Double patterning places the first and second mask patterns on two photomasks.

[0034] like Figure 3 As shown, when there is an overlapping area between the projections of two long strip active areas 1 (1A and 1B) along the second direction, and there are multiple active areas 1 distributed between the two active areas 1A and 1B, and the projections of adjacent active areas 1 along the second direction overlap, the first cutting pattern 2 includes a first cutting pattern 2B whose edge along the first direction is adjacent to the boundary of the active area 1B. Due to reasons such as inconsistent etching in the etching process, the first cutting pattern 2B and the adjacent first cutting pattern 2A cannot be set in two masks.

[0035] However, the interval between the first cutting patterns 2B and 2A is too close. When the pattern of the first cutting pattern 2 is transferred to the photoresist layer, it is easy to cause the process window of the photolithography process to be small, the pattern quality of the corresponding pattern opening in the photoresist layer to be poor, and the accuracy of the pattern transfer to be low, which can easily have an adverse effect on the subsequent etching process of cutting the mask side wall 20, for example: it is easy to cause damage to the mask side wall 20 of the active area 1.

[0036] One current approach is to adjust photolithography process parameters (for example, adjusting the exposure light source parameters) to improve pattern transfer accuracy. However, this approach requires re-establishing the light source and optical proximity correction model, which is time-consuming, costly, and complex.

[0037] Another method is to adjust the positions of the edges of the first cutting patterns 2A and 2B to increase the spacing between the first cutting patterns 2A and 2B along the second direction. However, this method reduces the opening size of the first cutting pattern 2, which increases the risk of residual mask sidewalls 20 during subsequent cutting of the mask sidewalls 20 below the first cutting pattern 2.

[0038] In order to solve the technical problem, in the graphic design method provided by the embodiment of the present invention, the decomposition pattern corresponding to the double graphicization is located on the interval between the initial patterns along the second direction, and the line width of the pattern to be tested in the closed loop is less than or equal to the critical splitting line width. Therefore, the first value represents the number of color changes of the decomposition pattern on both sides of the pattern to be tested, which correspondingly represents the number of partial intervals between the decomposition patterns that violate the splitting rule. When the spacing between adjacent patterns to be tested in the closed loop and the spacing between the pattern to be tested and the adjacent reference edge pattern are greater than the minimum line width of the decomposition pattern, the decomposition pattern needs to be split into two masks at the interval between adjacent patterns to be tested or the interval between the pattern to be tested and the adjacent reference edge pattern. The second value represents the number of color changes of the decomposition pattern at the interval between the pattern to be tested and the adjacent pattern to be tested or the reference edge pattern, which correspondingly represents the number of remaining intervals between the decomposition patterns that violate the splitting rule. The sum of the first value and the second value is the number of intervals that violate the splitting rule between the decomposition pattern of the double patterning in the closed loop. According to the odd ring principle, when the intervals between polygons that do not meet the rules in the double patterning form an odd cycle, there will be a splitting conflict. Therefore, the graphic design method determines whether the sum of the first value and the second value is an odd number, and accordingly determines whether the initial graphic can be double patterned. Moreover, the graphic design method provided by the embodiment of the present invention determines whether the initial graphic can be double patterned based on the initial graphic, so that before the double patterning is performed, the initial graphic that cannot be double patterned can be detected in advance, so as to make corresponding adjustments to the initial graphic in time, which is conducive to putting the problem in advance and avoiding adjusting the double patterning splitting conflict in subsequent processes, which is conducive to saving process and process time, and thus is conducive to improving the efficiency of the double patterning process and shortening the process cycle.

[0039] Figure 4 1 is a flow chart of an embodiment of a graphic design method provided by the present invention, wherein the graphic forming method includes double patterning. As an example, the graphic design method of this embodiment includes the following basic steps:

[0040] Step S1: providing an initial pattern, wherein the initial pattern includes a plurality of initial patterns spaced apart from each other, wherein the initial patterns extend along a first direction, and a direction perpendicular to the first direction is a second direction;

[0041] Step S2: setting a critical splitting line width and a critical splitting spacing corresponding to the initial pattern based on a double pattern splitting rule;

[0042] Step S3: setting a reference edge pattern, wherein projections of the reference edge pattern along the second direction overlap;

[0043] Step S4: obtaining a plurality of patterns to be tested based on the critical split line width and the critical split spacing, and the overlap of the projections of the initial pattern and the adjacent initial pattern or the reference edge pattern along the second direction between the initial pattern and the reference edge pattern, wherein the plurality of patterns to be tested and the reference edge pattern form a closed loop;

[0044] Step S51: obtaining the number of the patterns to be tested as a first value;

[0045] Step S52: The double patterning splitting rule includes a minimum line width for decomposing the pattern; obtaining the spacing between adjacent patterns to be tested in the closed loop and the spacing between the pattern to be tested and the adjacent reference edge pattern, the amount of spacing greater than the minimum line width as a second value;

[0046] Step S6: Determine whether the sum of the first value and the second value is an odd number;

[0047] Step S7: When the sum of the first value and the second value is an even number, it is determined that the initial pattern can be double-patterned.

[0048] In order to make the above-mentioned objects, features and advantages of the embodiments of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0049] refer to Figure 4 and Figure 5 , Figure 5 is a schematic diagram of an initial pattern provided by an embodiment of the present invention, performing step S1: providing an initial pattern 100, the initial pattern 100 comprising a plurality of initial patterns 110 spaced apart from each other, the initial pattern 110 extending along a first direction (such as Figure 5 The direction perpendicular to the first direction is the second direction (as shown in the X direction in FIG. Figure 5 shown in the Y direction).

[0050] The initial pattern 100 is a pattern to be determined for double patterning (DP). The initial pattern 110 is a plurality of patterns arranged at intervals within the initial pattern 100. Whether the initial pattern 100 is capable of double patterning is subsequently determined based on the width of the initial pattern 110 and the spacing between the initial patterns 110.

[0051] In this embodiment, the initial pattern 100 is an initial active area (AA) pattern, and the initial pattern 110 is an initial active area pattern. Specifically, in a semiconductor manufacturing process, a substrate and fins separated from the substrate are formed. The fins located on the active area are retained, and the area outside the active area is an isolation area. The fins in the isolation area are usually removed through a fin cut process.

[0052] It should be noted that, for the convenience of illustration and description, Figure 5 Only a partial graph of the initial graph 100 is shown.

[0053] Continue to refer Figure 4 , executing step S2: setting a critical split line width Wm and a critical split spacing Sm corresponding to the initial pattern 110 based on a double patterning (DP) split rule.

[0054] By setting the critical split line width Wm and critical split spacing Sm corresponding to the initial pattern 110, a closed loop can be obtained based on the critical split line width Wm and critical split spacing Sm, and based on the closed loop, it is determined whether the initial pattern 100 can be double patterned.

[0055] When double patterning a pattern, it is necessary to split the pattern, which is originally exposed by one mask, onto two masks. During the splitting process, the split patterns must meet pre-defined splitting rules based on process tolerance.

[0056] In this embodiment, the double patterning splitting rules include the minimum line width W1 and the minimum spacing S1 of the decomposed pattern. That is, after the initial pattern 100 is split into a decomposed pattern using double patterning, the decomposed pattern can achieve the minimum line width W1 and the minimum spacing S1 within the process tolerance.

[0057] In this embodiment, the step of setting the critical splitting line width Wm and the critical splitting spacing Sm corresponding to the initial pattern 110 includes: setting the minimum spacing S1 of the decomposition pattern to the critical splitting line width Wm corresponding to the initial pattern 110; setting the sum of the minimum spacing S1 of the decomposition pattern and twice the minimum line width W1 to the critical splitting spacing Sm corresponding to the initial pattern 110.

[0058] In this embodiment, the method of forming the initial pattern 100 includes double patterning, and the decomposition patterns corresponding to the double patterning are located at the intervals between the initial patterns 110 .

[0059] When the spacing between adjacent decomposition patterns is less than or equal to the minimum spacing S1, the adjacent decomposition patterns need to be split into two masks, that is, double graphical splitting is required. When the spacing between the initial patterns 110 is greater than the sum of the minimum spacing S1 of the decomposition patterns and twice the minimum line width W1, that is, the spacing between the adjacent decomposition patterns can be at least greater than the minimum spacing S1, the adjacent decomposition patterns do not need to be split into two masks. Therefore, in this embodiment, the sum of the minimum spacing S1 of the decomposition patterns and twice the minimum line width W1 is set as the critical splitting spacing Sm.

[0060] The minimum spacing S1 between the decomposed patterns corresponds to the minimum line width W1 of the initial pattern 110 that needs to be split. In this embodiment, the minimum spacing S1 of the decomposed patterns is set to the critical splitting line width Wm of the initial pattern 110, which means that when the line width of the initial pattern 110 is less than or equal to the critical splitting line width Wm, the decomposed patterns used to form the initial pattern 110 need to be split into two masks, that is, double graphical splitting is required.

[0061] The minimum line width W1 and minimum spacing S1 that can be achieved by the decomposition pattern are related to the current process tolerance, such as the limitation of lithography resolution, etc. Accordingly, the critical split spacing Sm and critical split line width Wm are also set according to specific process conditions.

[0062] Continue to refer Figure 4 , executing step S3: setting a reference edge pattern 120, wherein the projections of the reference edge pattern 120 along the second direction overlap.

[0063] The projections of the reference edge patterns 120 along the second direction overlap, so setting the reference edge patterns 120 prepares for subsequently obtaining multiple patterns to be tested that are located between the reference edge patterns 120 and can form a closed loop with the reference edge patterns 120 .

[0064] As an example, the reference edge patterns 120 are long strip patterns, and the reference edge patterns 120 are arranged in parallel and relatively spaced apart.

[0065] Continue to refer Figure 4 , executing step S4: based on the critical split line width Wm and the critical split spacing Sm, and the overlap of the projections of the initial pattern 110 and the adjacent initial pattern 110 or the reference edge pattern 120 along the second direction between the reference edge patterns 120, obtaining a plurality of patterns to be tested 130, wherein the plurality of patterns to be tested 130 and the reference edge pattern 120 form a closed loop 200 (such as Figure 5 The closed loop 200 is formed by connecting the arrows in the middle.

[0066] The pattern to be tested 130 and the closed loop 200 are obtained to prepare for the subsequent determination of whether the closed loop violates an odd cycle rule.

[0067] Based on the critical split line width Wm and the critical split spacing Sm, the pattern to be tested 130 is obtained. The pattern to be tested 130 of the closed loop 200 corresponds to the decomposition pattern that violates the design rule of double patterning. Therefore, by subsequently judging whether the closed loop violates the odd-numbered loop rule, it is judged whether the pattern within the closed loop 200 can be double patterned.

[0068] Moreover, the pattern to be tested 130 is also located between the reference edge patterns 120 , and the projections of the pattern to be tested 130 and the adjacent reference edge patterns 120 along the second direction overlap, so that the pattern to be tested 130 and the reference edge patterns 120 can form a closed loop 200 .

[0069] When there is no overlapping area between the projections of adjacent initial patterns 110 along the second direction, the adjacent initial patterns 110 are staggered, and the adjacent initial patterns 110 are not restricted by the critical split line width Wm and the critical split spacing Sm. Therefore, by limiting the overlap of the projections of adjacent patterns to be tested 130 along the second direction, not only is it ensured that the patterns to be tested 130 and the reference edge pattern 120 can form a closed loop 200, but it is also ensured that the accuracy of the subsequent judgment of whether the initial pattern 100 can be double-patterned based on the obtained closed loop 200 is determined.

[0070] Specifically, in this embodiment, in the closed loop 200, the line width of the pattern to be tested 130 is less than or equal to the critical split line width Wm, and the spacing between adjacent patterns to be tested 130, and the spacing between the pattern to be tested 130 and the adjacent reference edge pattern 120 is less than or equal to the critical split spacing Sm.

[0071] In a specific implementation, all the initial patterns 110 in the initial graph 100 are searched to obtain a closed loop 200 consisting of the pattern to be tested 130 and the reference edge pattern 120 that meets the above conditions.

[0072] In this embodiment, for the convenience of illustration and description, Figure 5As shown in the figure, adjacent patterns to be tested 130 in the second direction are parallel and arranged opposite each other with a gap. In other embodiments, the positions and shapes of the patterns to be tested and the reference edge patterns are not limited to this. For example, there may be a partial misalignment between adjacent patterns to be tested in the second direction, as long as the projections of the adjacent patterns to be tested along the second direction have an overlapping area. There may also be a partial misalignment between the patterns to be tested and adjacent reference edge patterns (for example, part of the patterns to be tested is not located in the area between the reference edge patterns), as long as the projections of the patterns to be tested and the adjacent reference edge patterns along the second direction have an overlapping area.

[0073] Continue to refer Figure 4 , executing step S51: obtaining the number of the patterns to be tested 130 as a first value.

[0074] The line width of the test patterns 130 within the closed loop 200 is less than or equal to the critical split line width Wm. Therefore, all test patterns 130 within the closed loop 200 require double patterning. The number of test patterns 130 corresponds to the number of color changes of the decomposition patterns on either side of the test pattern 130 within the closed loop 200 after double patterning, i.e., the number of partial intervals between adjacent decomposition patterns. Identical decomposition patterns indicate that the decomposition patterns can be placed on the same mask; different decomposition patterns indicate that the decomposition patterns need to be placed on different masks.

[0075] As an example, the number of the patterns 130 to be tested within the closed loop 200 is 4. In other embodiments, the number of the patterns to be tested within the closed loop may be other numbers according to the actual graphic design of the initial graphic.

[0076] refer to Figure 4 , executing step S52: the double patterning splitting rule includes a minimum line width W1 of the decomposed pattern; obtaining the spacing between adjacent patterns to be tested 130 in the closed loop 200, and the spacing between the pattern to be tested 130 and the adjacent reference edge pattern 120, the number of which is greater than the minimum line width W1, as the second value.

[0077] The double patterning splitting rule includes a minimum line width W1 of a decomposition pattern corresponding to the interval between the decomposition pattern and the initial pattern 110 .

[0078] When the spacing between adjacent patterns to be measured 130 in the closed loop 200, and the spacing between the pattern to be measured 130 and the adjacent reference edge pattern 120, are less than or equal to the minimum line width W1, only one decomposition pattern can be set at the spacing position between the pattern to be measured 130 and the adjacent pattern to be measured 130 or the reference edge pattern 120, and the decomposition pattern at the spacing position between the pattern to be measured 130 and the adjacent pattern to be measured 130 or the reference edge pattern 120 does not need to be split into two masks.

[0079] Therefore, when the spacing between adjacent patterns to be tested 130 in the closed loop 200, and the spacing between the pattern to be tested 130 and the adjacent reference edge pattern 120 are greater than the minimum line width W1 of the decomposition pattern, double patterning for forming the pattern to be tested 130 needs to be performed at the interval position between the pattern to be tested 130 and the adjacent pattern to be tested 130 or the reference edge pattern 120, and the corresponding decomposition pattern needs to be placed in two masks. The second value corresponds to the number of color changes (Color Change) of the adjacent decomposition patterns at the interval position between the pattern to be tested 130 and the adjacent pattern to be tested 130 or the reference edge pattern 120 in the closed loop 200.

[0080] The sum of the second value and the first value corresponds to the total number of color changes of the corresponding decomposition pattern in the closed loop 200. Therefore, it is possible to subsequently determine whether the closed loop 200 violates the odd-numbered loop rule based on the sum of the second value and the first value.

[0081] Specifically, the spacings between all the initial patterns 110 in the closed loop 200 are measured, and the number of the spacings that are larger than the minimum line width W1 is counted as the second value.

[0082] Continue to refer Figure 4 , execute step S6: determine whether the sum of the first value and the second value is an odd number.

[0083] According to the odd cycle rule, in the semiconductor field, any locations that do not meet the rules after double patterning is split are defined as conflicts. Before the split, if the intervals between polygons that do not meet the rules form an odd cycle within a closed loop composed of several polygons, the result after the split will definitely remain a conflict, and double patterning cannot be successfully performed.

[0084] In this embodiment, the first value is the number of the patterns to be tested 130, which corresponds to the interval between the patterns to be tested 130 and the decomposition patterns, and the line width of the patterns to be tested 130 is less than or equal to the minimum spacing S1 of the decomposition patterns. Therefore, the first value represents the number of times the color of the decomposition patterns located on both sides of the pattern to be tested 130 changes, which correspondingly represents the number of partial intervals between the decomposition patterns that violate the splitting rules; the second value is the number of intervals between adjacent patterns to be tested 130 and the intervals between the pattern to be tested 130 and the adjacent reference edge pattern 120 that are greater than the minimum line width W1 of the decomposition pattern and less than or equal to the critical splitting spacing Sm. The positions corresponding to the positions greater than the minimum line width W1 of the decomposition pattern and less than or equal to the critical splitting spacing S1 require the decomposition pattern to be split into two masks. In other words, the second value represents the number of intervals between the remaining decomposition patterns that violate the splitting rules.

[0085] In summary, the sum of the first and second values ​​represents the number of intervals between the decomposition patterns of the double graphics within the closed loop 200 that violate the splitting rule. By determining whether the sum of the first and second values ​​is an odd number, it is possible to determine whether there will be any remaining conflicts after the double graphics split according to the odd ring rule, and then determine whether the initial graphic can be double-graphiced.

[0086] Moreover, the graphic design method provided in this embodiment determines whether the initial graphic 100 can be double-patterned based on the line width and spacing of the initial graphic 100, so that before the double patterning is performed, the initial graphic 100 that cannot be double-patterned can be detected in advance, so that the initial graphic 100 can be adjusted accordingly in time, which is conducive to putting the problem in advance and avoiding adjusting the double patterning splitting conflict in subsequent processes, which is conducive to saving process and process time, and further conducive to improving the efficiency of the double patterning process and shortening the process cycle.

[0087] Continue to refer Figure 4 , executing step S7: when the sum of the first value and the second value is an even number, determining that the initial graphic 100 can be double-patterned.

[0088] As can be seen from the foregoing, according to the odd-numbered ring rule, the sum of the first value and the second value represents the number of intervals between the decomposition patterns of the double patterning corresponding to the closed loop 200 that violate the splitting rule. When the number of intervals is an odd number, the initial pattern 100 cannot be double-patterned; therefore, when the number of intervals is an even number, there will be no remaining conflicts when the initial patterning 100 is double-patterned, and it is determined that the initial pattern 100 can be double-patterned.

[0089] When the sum of the first value and the second value is an even number, it is determined that the initial pattern 100 can be double patterned, and then the next process is performed, for example, double patterning splitting, optical proximity correction, etc. are performed on the initial pattern 100.

[0090] It should be noted that, continue to refer to Figure 4 In this embodiment, the graphic design method further includes: executing step S8, when the sum of the first value and the second value is an odd number, determining whether the closed loop 200 has a pattern to be tested 130 corresponding to the critical splitting spacing Sm.

[0091] As can be seen from the above, when the sum of the first value and the second value is an odd number, it is determined that a region with a double patterning splitting conflict exists in the closed loop 200 , and the initial pattern 100 cannot be double patterned accordingly.

[0092] Combined with reference Figure 6 , indicating Figure 5 The initial pattern 100 and the corresponding double-patterned decomposition pattern, the decomposition pattern includes a first decomposition pattern 210 and a second decomposition pattern 220, and the first decomposition pattern 210 and the second decomposition pattern 220 cannot be placed in the same mask at the same time.

[0093] Depend on Figure 6 It can be seen that when the sum of the first value and the second value is an odd number, Figure 6 At the location indicated by the dashed box, the spacing between two adjacent first decomposition patterns 210 violates design rules, resulting in a double patterning conflict at the location indicated by the dashed box. Therefore, when the sum of the first and second values ​​is an odd number, this embodiment requires adjusting the initial pattern 100 accordingly to avoid the double patterning conflict and ensure that the initial pattern 100 meets the requirements for double patterning.

[0094] In this embodiment, the critical splitting spacing Sm of the initial pattern 110 is: the sum of the minimum spacing S1 between the decomposed patterns and twice the minimum line width W1 of the decomposed pattern. Therefore, at the position corresponding to the critical splitting spacing Sm, which is the position where the spacing between the initial patterns 110 in the closed loop 200 is the largest, at the position corresponding to the critical splitting spacing Sm, the corresponding pattern to be tested 130 still has sufficient adjustment space. Accordingly, by determining whether the closed loop 200 is the pattern to be tested 130 corresponding to the critical splitting spacing Sm, the position of the pattern to be tested 130 corresponding to the critical splitting spacing Sm can be adjusted subsequently.

[0095] Continue to refer Figure 4, executing step S9, when the closed loop 200 includes a pattern to be tested 130 corresponding to the critical split spacing Sm, the pattern to be tested 130 corresponding to the critical split spacing Sm is used as a pattern to be processed 130a. The pattern to be tested 130 corresponding to the critical split spacing Sm is marked as a pattern to be processed 130a to facilitate subsequent adjustments to the pattern to be processed 130a.

[0096] As an example, in Figure 7 The closed loop 200 shown in FIG. 1 only illustrates one pattern to be tested 130 corresponding to the critical splitting spacing Sm, as the pattern to be processed 130a. Specifically, the spacing between the pattern to be processed 130a and the adjacent reference edge pattern 120 is the critical splitting spacing Sm.

[0097] in, Figure 7 The spacing Sn between the to-be-processed pattern 130 a and the initial pattern 110 on the other side is less than or equal to the minimum line width W1 of the decomposed pattern.

[0098] Continue to refer Figure 4 , executing step S10, moving the pattern to be processed 130a along the second direction and in the direction of reducing the critical splitting interval Sm by a distance equal to the minimum line width W1 of the decomposed pattern.

[0099] The position of the pattern to be processed 130a is moved in a direction of reducing the critical splitting spacing Sm, thereby increasing the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side. In addition, in this embodiment, the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side is increased by a distance Wm, so that the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side is greater than the minimum line width W1 of the decomposition pattern or greater than the critical splitting spacing Sm.

[0100] Among them, when the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side is made greater than the minimum line width W1 of the decomposed pattern, the spacing position between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side can be split into two masks. At the same time, at the spacing position originally corresponding to the critical splitting spacing Sm, the spacing is still greater than the minimum line width W1 of the decomposed pattern. Therefore, this embodiment can increase the number of spacings that violate the double patterning splitting rule, and accordingly change the number of spacings that violate the double patterning splitting rule between the decomposed patterns from an odd number to an even number, thereby enabling the initial pattern 100 to be double patterned.

[0101] When the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side is made greater than the critical splitting spacing Sm, the decomposed pattern at the position corresponding to the spacing between the pattern to be processed 130a and the adjacent initial pattern 110 on the other side can be produced in the same mask, thereby breaking the closed loop 200 and correspondingly enabling the initial pattern 100 to be double-patterned.

[0102] Moreover, in semiconductor processes, the minimum line width W1 of the decomposition pattern is usually small. Therefore, moving the position of the to-be-processed pattern 130a in the initial graphic 100 by a distance of the minimum line width W1 of the decomposition pattern has little effect on the electrical performance of the semiconductor structure.

[0103] Specifically, in this embodiment, the initial pattern 100 is the initial active area pattern. After the initial active area pattern is adjusted, the mask patterns corresponding to the subsequent related film layers also need to be adjusted accordingly, for example: the mask patterns in the subsequent gate structure cutting process.

[0104] As an example, the minimum line width W1 of the decomposition pattern is equal to the critical split line width Wm. In the semiconductor field, dense areas of pattern resolution are difficult and require high precision. If the minimum line width W1 of the decomposition pattern is equal to the critical split line width Wm, the closed loop 200 corresponds to a high-density pattern area. Therefore, by adjusting the pattern within the closed loop 200, the adjusted pattern can be more significantly improved in terms of its friendliness to double patterning processes.

[0105] Combined with reference Figure 7 , indicating the Figure 5 FIG. 1 is a schematic diagram showing the adjustment of the position of the pattern to be processed 130 a in the initial pattern 100 and the corresponding double patterned decomposition pattern.

[0106] Depend on Figure 7 It can be seen that after the pattern to be processed 130a is moved along the second direction and along the direction of reducing the critical splitting spacing Sm by a distance of the minimum line width W1 of the decomposition pattern, the spacing between the pattern to be processed 130a and the initial pattern 110 on the other side (such as Figure 7 The dotted line box in the middle increases the size of the decomposition pattern 130a and the initial pattern 110 on the other side, thereby changing the interval between the decomposition patterns of the double patterning that violates the splitting rule from an odd number to an even number, thereby avoiding the double patterning splitting conflict and enabling the initial pattern 100 to be double patterned.

[0107] Combined with reference Figure 8, which illustrates the adjustment of the position of the to-be-processed pattern 230a in another initial pattern and the corresponding double-patterned decomposition pattern.

[0108] Figure 8 The spacing between the pattern to be processed 230a and the adjacent initial pattern shown is the critical splitting spacing Sm. When the pattern to be processed 130a is moved along the second direction and in the direction of reducing the critical splitting spacing Sm by a distance of the minimum line width W1 of the decomposition pattern, the spacing between the pattern to be processed 130a and the adjacent initial pattern on the other side is greater than the critical splitting spacing Sm. The decomposition pattern at the position corresponding to the spacing between the pattern to be processed 130a and the adjacent initial pattern on the other side can be produced in the same mask, thereby disconnecting the closed loop 200, and correspondingly, the initial pattern 100 can also be double-patterned.

[0109] Correspondingly, the present invention further provides a mask assembly, which is used to form a pattern designed by the pattern design method provided in an embodiment of the present invention.

[0110] From the foregoing, it can be seen that the graphics designed by the graphic design method provided by the embodiment of the present invention can avoid double patterning splitting conflicts. Accordingly, the embodiment of the present invention can use a mask combination to form the graphics designed by the graphic design method of the embodiment of the present invention. When using double patterning to form the graphics of the mask combination, double patterning splitting conflicts will not occur, which is correspondingly beneficial to saving steps and process time, and further beneficial to improving the efficiency of the double patterning process and shortening the process cycle.

[0111] The mask assembly includes two masks, and the mask is a mask used to form the pattern designed by the pattern design method of the present invention by utilizing double patterning.

[0112] Accordingly, the present invention also provides a graphic design system, wherein the graphic forming method includes double patterning. Figure 9 It is a functional block diagram of an embodiment of the graphic design system provided by the present invention.

[0113] In this embodiment, the graphic design system 400 includes: a providing unit 410 for providing an initial graphic, wherein the initial graphic includes a plurality of spaced initial patterns, wherein the initial patterns extend along a first direction, and a direction perpendicular to the first direction is a second direction; a configuring unit 420 for setting a critical splitting line width Wm and a critical splitting spacing Sm corresponding to the initial pattern based on a double graphic splitting rule; a reference edge pattern setting unit 430 for setting a reference edge pattern whose projections overlap along the second direction; a closed loop acquiring unit 440 for acquiring a closed loop based on the critical splitting line width Wm and the critical splitting spacing Sm, and the projections along the second direction between the initial pattern and the adjacent initial pattern or reference edge pattern located between the reference edge patterns. The shadows overlap to obtain multiple patterns to be tested, and the multiple patterns to be tested and the reference edge pattern form a closed loop; a pattern quantity acquisition unit 451 is used to obtain the number of the patterns to be tested, and the output is a first value; a spacing acquisition unit 452, the double graphic splitting rule includes the minimum line width W1 of the decomposed pattern, the spacing acquisition unit is used to obtain the spacing between adjacent patterns to be tested in the closed loop, and the spacing between the pattern to be tested and the adjacent reference edge pattern, the number of which is greater than the minimum line width W1, is output as a second value; a judgment unit 460 is used to judge whether the sum of the first value and the second value is an odd number; when the sum of the first value and the second value is an even number, the judgment unit 460 is used to judge whether the initial pattern can be double-graphiced.

[0114] The decomposition pattern corresponding to the double patterning is located in the interval between the initial patterns along the second direction. The line width of the pattern to be tested within the closed loop obtained by the closed loop acquisition unit 440 is less than or equal to the critical split line width Wm. Therefore, the first value represents the number of times the color of the decomposition pattern on both sides of the pattern to be tested changes, which correspondingly represents the number of partial intervals between the decomposition patterns that violate the splitting rule. When the spacing between adjacent patterns to be tested in the closed loop and the spacing between the pattern to be tested and the adjacent reference edge pattern are greater than the minimum line width of the decomposition pattern, the decomposition pattern needs to be split into two masks at the interval between adjacent patterns to be tested or the interval between the pattern to be tested and the adjacent reference edge pattern. The second value represents the number of times the color of the decomposition pattern changes at the interval between the pattern to be tested and the adjacent pattern to be tested or the reference edge pattern, which correspondingly represents the number of remaining intervals between the decomposition patterns that violate the splitting rule. The sum of the first value and the second value is the number of intervals that violate the splitting rule between the decomposition patterns of the double patterning within the closed loop. According to the odd cycle principle, when the intervals between polygons that do not meet the rules form an odd cycle, there will be a split conflict. Therefore, the determining unit 460 determines whether the sum of the first value and the second value is an odd number, and can determine whether the initial graphic can be double-graphiced.

[0115] Moreover, the graphic design system 400 determines whether the initial graphic can be double-patterned based on the initial graphic, so that before the double patterning is performed, the initial graphic that cannot be double-patterned can be detected in advance, so as to make corresponding adjustments to the initial graphic in time, which is conducive to putting the problem in advance and avoiding adjusting the double patterning splitting conflict in the subsequent process, which is conducive to saving process and process time, and thus improving the efficiency of the double patterning process and shortening the process cycle.

[0116] The providing unit 410 is configured to provide an initial pattern, where the initial pattern is a pattern to be confirmed whether double patterning (DP) can be performed.

[0117] The initial pattern is a plurality of patterns arranged at intervals in the initial graphic. Subsequently, based on the width of the initial pattern and the spacing between the initial patterns, it is determined whether the initial graphic can be double patterned.

[0118] In this embodiment, the initial pattern is an initial active area (AA) pattern, and the initial pattern is an initial active area pattern. Specifically, in a semiconductor manufacturing process, a substrate and fins separated from the substrate are formed. The fins located on the active area are retained, and the area outside the active area is an isolation area. The fins in the isolation area are usually removed through a fin cut process.

[0119] The configuration unit 420 is used to set the critical split line width Wm and the critical split spacing Sm corresponding to the initial pattern, so that the closed loop acquisition unit 440 can obtain a closed loop based on the critical split line width Wm and the critical split spacing Sm. Accordingly, the judgment unit 460 judges whether the initial pattern can be double-patterned.

[0120] When double patterning a pattern, it is necessary to split the pattern, which is originally exposed by one mask, onto two masks. During the splitting process, the split patterns must meet pre-set splitting rules based on process tolerance.

[0121] In this embodiment, the double patterning splitting rule includes the minimum line width W1 and minimum spacing S1 of the decomposed pattern. That is, after the initial pattern is split by double patterning to form decomposed patterns, the minimum line width W1 and minimum spacing S1 that can be achieved by the decomposed pattern within the process tolerance.

[0122] Combined with reference Figure 10 , indicating Figure 9 Schematic diagram of an embodiment of a configuration unit 420 in FIG. In this embodiment, the configuration unit 420 includes: a critical split spacing configurator 421, configured to set the sum of the minimum spacing S1 of the decomposition pattern and twice the minimum line width W1 as the critical split spacing Sm of the initial pattern; and a critical split line width configurator 422, configured to set the minimum spacing S1 of the decomposition pattern as the critical split line width Wm of the initial pattern.

[0123] In this embodiment, the method of forming the initial pattern includes double patterning, and the decomposition patterns corresponding to the double patterning are located at positions spaced apart between the initial patterns.

[0124] When the spacing between adjacent decomposition patterns is less than or equal to the minimum spacing S1, the adjacent decomposition patterns need to be split into two masks, that is, double graphical splitting is required. When the spacing between the initial patterns is greater than the sum of the minimum spacing S1 of the decomposition pattern and twice the minimum line width W1, that is, the spacing between the adjacent decomposition patterns can be at least greater than the minimum spacing S1, the adjacent decomposition patterns do not need to be split into two masks. Therefore, in this embodiment, the critical splitting spacing configurator 421 sets the sum of the minimum spacing S1 of the decomposition pattern and twice the minimum line width W1 as the critical splitting spacing Sm.

[0125] The minimum spacing S1 between the decomposed patterns corresponds to the minimum line width W1 of the initial pattern that needs to be split. In this embodiment, the critical splitting line width configurator 422 sets the minimum spacing S1 of the decomposed patterns to the critical splitting line width Wm of the initial pattern, which means that when the line width of the initial pattern is less than or equal to the critical splitting line width Wm, the decomposed pattern used to form the initial pattern needs to be split into two masks, that is, double graphical splitting is required.

[0126] It should be noted that the minimum line width W1 and minimum spacing S1 that can be achieved by the decomposition pattern are related to the current process tolerance, such as the limitation of lithography resolution, etc. Accordingly, the configuration unit 420 sets the critical split spacing Sm and critical split line width Wm according to specific process conditions.

[0127] The reference edge pattern setting unit 430 first sets a reference edge pattern that overlaps with the projection along the second direction, so that the closed loop acquisition unit 440 can use the reference edge pattern as a reference benchmark to obtain multiple patterns to be tested that are located between the reference edge patterns and form a closed loop with the reference edge pattern.

[0128] As an example, the reference edge patterns are long strip patterns, and the reference edge patterns are arranged in parallel and relatively spaced apart.

[0129] The closed loop acquisition unit 440 is used to obtain the pattern to be tested and the closed loop, so that the pattern number acquisition unit 451 can obtain the number of patterns to be tested in the closed loop, the spacing acquisition unit 452 can obtain the spacing value between the initial patterns in the closed loop, and the judgment unit 460 can judge whether the closed loop violates the odd cycle rule.

[0130] The closed loop acquisition unit 440 obtains the test pattern based on the critical split line width Wm and the critical split spacing Sm. The test pattern corresponds to a decomposed pattern that violates the design rule for double patterning. Therefore, the judgment unit 460 can determine whether the pattern within the closed loop can be double patterned by determining whether the closed loop violates the odd-numbered loop rule. Moreover, the test pattern is located between the reference edge patterns. The projections of the test pattern and the reference edge pattern along the second direction can overlap, so that the test pattern and the reference edge pattern can form a closed loop. At the same time, when there is no overlapping area between the projections of adjacent initial patterns along the second direction, the adjacent initial patterns are staggered, and the adjacent initial patterns are not restricted by the critical split line width Wm and the critical split spacing Sm. Therefore, by limiting the overlap of the projections of adjacent test patterns along the second direction, the closed loop acquisition unit 440 not only ensures that the test pattern and the reference edge pattern can form a closed loop, but also ensures the accuracy of the judgment unit 460's judgment on whether the initial pattern can be double patterned based on the obtained closed loop.

[0131] Specifically, in this embodiment, in the closed loop, the line width of the pattern to be measured is less than or equal to the critical split line width Wm, and the spacing between the pattern to be measured and the adjacent pattern to be measured or the reference edge pattern is less than or equal to the critical split spacing Sm.

[0132] In a specific implementation, the closed loop acquisition unit 440 searches all initial patterns in the initial graph to obtain a closed loop consisting of the pattern to be tested and the reference edge pattern that meets the above conditions.

[0133] The patterns to be tested may be spaced apart and arranged in parallel and facing each other. However, the positions and shapes of the patterns to be tested and the reference edge patterns are not limited thereto. For example, the patterns to be tested may be partially misaligned, as long as the projections of adjacent patterns to be tested along the second direction overlap. The patterns to be tested may also be partially misaligned with adjacent reference edge patterns (for example, portions of the patterns to be tested are not located in the area between the reference edge patterns), as long as the projections of the patterns to be tested and the adjacent reference edge patterns along the second direction overlap.

[0134] The line width of the patterns to be tested within the closed loop is less than or equal to the critical splitting line width Wm. Therefore, the patterns to be tested within the closed loop need to be double-graphically split. The pattern quantity acquisition unit 451 obtains the number of patterns to be tested, which corresponds to the number of times the color of the decomposed patterns located on both sides of the pattern to be tested changes after the double-graphic splitting is performed within the closed loop, that is, the number of partial intervals between adjacent decomposed patterns.

[0135] The double patterning splitting rule includes a minimum line width W1 of the decomposition pattern, and the decomposition pattern corresponds to the interval between the initial pattern. When the spacing between adjacent patterns to be measured in the closed loop, and the spacing between the pattern to be measured and the adjacent reference edge pattern, are less than or equal to the minimum line width W1, only one decomposition pattern can be set at the interval between adjacent patterns to be measured and the interval between the pattern to be measured and the adjacent reference edge pattern. The decomposition patterns at the interval between adjacent patterns to be measured and the interval between the pattern to be measured and the adjacent reference edge pattern do not need to be placed in two masks.

[0136] Therefore, when the spacing between adjacent patterns to be measured in the closed loop, and the spacing between the patterns to be measured and the adjacent reference edge patterns, is greater than the minimum line width W1 of the decomposition pattern, the double patterning used to form the patterns to be measured needs to be double patterned at the spacing between adjacent patterns to be measured and the spacing between the patterns to be measured and the adjacent reference edge patterns. The corresponding decomposition patterns need to be prevented from being in two masks. The spacing acquisition unit 452 obtains a second value, which corresponds to the number of color changes (color changes) of adjacent decomposition patterns at the spacing between the pattern to be measured 130 and the adjacent pattern to be measured 130 or the reference edge pattern 120 in the closed loop 200. The same color of the decomposition patterns indicates that the decomposition patterns can be set in the same mask; different colors of the decomposition patterns indicate that the decomposition patterns need to be set in different masks.

[0137] The sum of the second value and the first value corresponds to the total number of color changes of the corresponding decomposition pattern in the closed loop, so the judgment unit 460 can judge whether the closed loop violates the odd loop rule based on the sum of the second value and the first value.

[0138] Specifically, the spacing acquisition unit 452 measures the spacings between all initial patterns in the closed loop, and counts the number of spacings that are greater than the minimum line width W1 as the second value.

[0139] According to the odd-ring rule, in the semiconductor field, the positions that still do not meet the rules after double patterning is split are defined as conflicts. Before the split, if the intervals between polygons that do not meet the rules form an odd-numbered cycle within the closed loop composed of several polygons, the result after the split will definitely have a remaining conflict, that is, double patterning cannot be successfully performed.

[0140] In this embodiment, the first value is the number of the patterns to be tested, which corresponds to the interval between the patterns to be tested and the decomposition patterns. The line width of the pattern to be tested 130 is less than or equal to the minimum spacing S1 of the decomposition pattern. Therefore, the first value represents the number of times the color of the decomposition patterns located on both sides of the pattern to be tested 130 changes, which correspondingly represents the number of partial intervals between the decomposition patterns that violate the splitting rules; the second value is the number of intervals between adjacent patterns to be tested and the intervals between the pattern to be tested and the adjacent reference edge patterns that are greater than the minimum line width W1 of the decomposition pattern and less than or equal to the critical splitting spacing Sm. The positions corresponding to the positions greater than the minimum line width W1 of the decomposition pattern and less than or equal to the critical splitting spacing Sm require the decomposition pattern to be split into two masks. In other words, the second value represents the number of intervals between the remaining decomposition patterns that violate the splitting rules.

[0141] In summary, the sum of the first and second values ​​represents the number of intervals between the decomposition patterns of the closed-loop double graphics that violate the splitting rule. The judgment unit 460 determines whether the sum of the first and second values ​​is an odd number, and accordingly can determine whether there will be any remaining conflicts after the double graphics split according to the odd ring rule, and then determine whether the initial graphics can be double-graphiced.

[0142] Moreover, the judgment unit 460 judges whether the initial graphic can be double-patterned based on the line width and spacing of the initial graphic, so that before the double patterning is performed, the initial graphic that cannot be double-patterned can be detected in advance, so as to facilitate timely adjustment of the initial graphic, which is conducive to putting the problem in advance and avoiding the adjustment of the double patterning splitting conflict in the subsequent process, which is conducive to saving process and process time, and further conducive to improving the efficiency of the double patterning process and shortening the process cycle.

[0143] As can be seen from the above, according to the odd ring rule, the sum of the first value and the second value represents the number of intervals between the decomposition patterns of the double graphing corresponding to the closed loop that violate the splitting rule. When the number of intervals is an odd number, the initial graph cannot be double-graphed; therefore, when the number of intervals is an even number, there will be no remaining conflicts when the initial graph is double-graphed and split, and it is judged that the initial graph can be double-graphed.

[0144] When the determination unit 460 determines that the initial pattern can be double patterned, the initial pattern is output to the next process, for example, double patterning separation, optical proximity correction, and other processes are performed on the initial pattern.

[0145] In this embodiment, the graphic design system 400 also includes: an analysis unit 470, which is used to determine whether the closed loop contains a pattern to be tested corresponding to the critical splitting spacing Sm when the judgment unit 460 determines that the sum of the first numerical value and the second numerical value is an odd number; a marking unit 480, which is used to mark the pattern to be tested corresponding to the critical splitting spacing Sm as a pattern to be processed when the closed loop contains a pattern to be tested corresponding to the critical splitting spacing Sm; and an adjustment unit 490, which is used to move the pattern to be processed along the second direction and in the direction of reducing the critical splitting spacing Sm by a distance of the minimum line width W1 of the decomposed pattern.

[0146] As can be seen from the above, when the sum of the first value and the second value is an odd number, the determination unit 460 determines that a region with a double patterning splitting conflict exists in the closed loop, and the initial pattern cannot be double patterned accordingly.

[0147] Therefore, when the sum of the first value and the second value is an odd number, the graphic design system 400 provided in this embodiment needs to adjust the initial graphic accordingly to avoid double patterning splitting conflicts and ensure that the initial graphic meets the requirements for double patterning.

[0148] In this embodiment, the critical splitting spacing Sm of the initial pattern is: the sum of the minimum spacing S1 between the decomposed patterns and twice the minimum line width W1 of the decomposed pattern. Therefore, at the position corresponding to the critical splitting spacing Sm, which is the position where the spacing between the initial patterns in the closed loop is the largest, at the position corresponding to the critical splitting spacing Sm, the corresponding pattern to be tested still has sufficient adjustment space. Accordingly, the analysis unit 470 determines whether the closed loop is the pattern to be tested corresponding to the critical splitting spacing Sm, so that the marking unit 480 can mark the pattern to be tested corresponding to the critical splitting spacing Sm, and the adjustment unit 490 can adjust the position of the pattern to be tested corresponding to the critical splitting spacing Sm.

[0149] The marking unit 480 is used to mark the pattern to be measured corresponding to the critical splitting interval Sm as a pattern to be processed, so that the adjusting unit 490 can adjust the pattern to be processed.

[0150] The adjustment unit 490 moves the position of the pattern to be processed in the direction of reducing the critical splitting spacing Sm, thereby increasing the spacing between the pattern to be processed and the adjacent initial pattern on the other side. In addition, this embodiment increases the spacing between the pattern to be processed and the adjacent initial pattern on the other side by Wm, so that the spacing between the pattern to be processed and the adjacent initial pattern on the other side is greater than the minimum line width W1 of the decomposed pattern or greater than the critical splitting spacing Sm.

[0151] Among them, when the spacing between the pattern to be processed and the adjacent initial pattern on the other side is made greater than the minimum line width W1 of the decomposed pattern, the spacing position between the pattern to be processed and the adjacent initial pattern on the other side can be split into two masks. At the same time, at the spacing position originally corresponding to the critical splitting spacing Sm, the spacing is still greater than the minimum line width W1 of the decomposed pattern. Therefore, this embodiment can increase the number of spacings that violate the double patterning splitting rule, and accordingly change the number of spacings that violate the double patterning splitting rule between the decomposed patterns from an odd number to an even number, thereby enabling the initial pattern to be double patterned.

[0152] When the spacing between the pattern to be processed and the adjacent initial pattern on the other side is greater than the critical splitting spacing Sm, the decomposed pattern at the position corresponding to the spacing between the pattern to be processed and the adjacent initial pattern on the other side can be produced in the same mask, thereby breaking the closed loop and correspondingly enabling the initial pattern to be double-patterned.

[0153] Moreover, in semiconductor processes, the minimum line width W1 of the decomposed pattern is usually small. Therefore, the adjustment unit 490 moves the position of the pattern to be processed in the initial graphic by a distance of the minimum line width W1 of the decomposed pattern, which has little impact on the electrical performance of the semiconductor structure.

[0154] Specifically, in this embodiment, the initial pattern is the initial active area pattern. After the initial active area pattern is adjusted, the mask patterns corresponding to the subsequent related film layers also need to be adjusted accordingly, for example: the mask patterns in the subsequent gate structure cutting process.

[0155] As an example, the minimum line width W1 of the decomposition pattern is equal to the critical split line width Wm. In the semiconductor field, dense areas of pattern resolution are difficult and require high precision. If the minimum line width W1 of the decomposition pattern is equal to the critical split line width Wm, then the closed loop corresponds to an area with high pattern density. Therefore, by adjusting the pattern within the closed loop, the adjusted pattern can be more significantly improved in terms of its friendliness to double patterning processes.

[0156] The embodiment of the present invention further provides a device that can implement the graphic design method provided by the embodiment of the present invention by loading the above graphic design method in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as follows Figure 11 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0157] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 communicate with each other through the communication bus 04. The communication interface 02 can be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit CPU, or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement an embodiment of the present invention. The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (NVM), such as at least one disk storage. The memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the access control method provided in an embodiment of the present invention.

[0158] It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for understanding the contents disclosed in the embodiments of the present invention; given that these other devices may not be necessary for understanding the contents disclosed in the embodiments of the present invention, the embodiments of the present invention will not introduce them one by one.

[0159] An embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the graphic design method provided by the embodiment of the present invention.

[0160] In the graphic design method provided by an embodiment of the present invention, the decomposed pattern corresponding to the double graphicization is located on the interval between the initial patterns along the second direction, and the line width of the pattern to be tested in the closed loop is less than or equal to the critical splitting line width. Therefore, the first value represents the number of color changes of the decomposed pattern located on both sides of the pattern to be tested, which correspondingly represents the number of partial intervals between the decomposed patterns that violate the splitting rules. When the spacing between adjacent patterns to be tested in the closed loop and the spacing between the pattern to be tested and the adjacent reference edge pattern are greater than the minimum line width of the decomposed pattern, the decomposed pattern needs to be split into two masks at the interval between adjacent patterns to be tested or the interval between the pattern to be tested and the adjacent reference edge pattern. The second value represents the number of color changes of the decomposed pattern at the interval between the pattern to be tested and the adjacent pattern to be tested or the reference edge pattern, which correspondingly represents the number of remaining intervals between the decomposed patterns that violate the splitting rules. The first value The sum of the first value and the second value is the number of intervals that violate the splitting rule between the decomposition patterns of the double patterning in the closed loop. According to the odd ring principle, when the intervals between polygons that do not meet the rules in the double patterning form an odd cycle, there will be a splitting conflict. Therefore, the graphic design method determines whether the sum of the first value and the second value is an odd number, and can determine whether the initial graphic can be double patterned; moreover, the graphic design method provided by the embodiment of the present invention determines whether the initial graphic can be double patterned based on the initial graphic, so that before the double patterning is performed, the initial graphic that cannot be double patterned can be detected in advance, so as to make corresponding adjustments to the initial graphic in time, which is conducive to pre-setting the problem and avoiding adjusting the double patterning splitting conflict in subsequent processes, saving process and process time, and thus helping to improve the efficiency of the double patterning process and shorten the process cycle.

[0161] The embodiments of the present invention may be implemented by various means such as hardware, firmware, software, or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention may be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc.

[0162] In a firmware or software configuration, the embodiments of the present invention may be implemented in the form of modules, procedures, functions, and the like. Software codes may be stored in a memory unit and executed by a processor. The memory unit may be located inside or outside the processor and may send and receive data to and from the processor via various known means.

[0163] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for designing a pattern, wherein the method for forming the pattern comprises double patterning, characterized in that: include: Providing an initial pattern, the initial pattern comprising a plurality of initial patterns spaced apart from each other, the initial patterns extending along a first direction, and a direction perpendicular to the first direction being a second direction; Based on the double pattern splitting rule, setting the critical splitting line width and critical splitting spacing corresponding to the initial pattern; setting reference edge patterns, wherein projections of the reference edge patterns along the second direction overlap; Based on the critical split line width and the critical split spacing, and the overlap of the projections of the initial pattern and the adjacent initial pattern or the reference edge pattern along the second direction between the reference edge patterns, a plurality of patterns to be tested are obtained, wherein the plurality of patterns to be tested and the reference edge pattern form a closed loop; Obtaining the number of the patterns to be tested as a first value; The double patterning splitting rules include a minimum line width for decomposing the pattern; Obtaining the spacing between adjacent patterns to be measured in the closed loop and the spacing between the pattern to be measured and the adjacent reference edge pattern, which are greater than the minimum line width, as a second value; Determining whether the sum of the first value and the second value is an odd number; When the sum of the first value and the second value is an even number, it is determined that the initial pattern can be double patterned.

2. The graphic design method according to claim 1, wherein: The graphic design method further includes: when the sum of the first value and the second value is an odd number, determining whether the closed loop contains a pattern to be tested corresponding to the critical splitting interval; When the closed loop contains a pattern to be measured corresponding to the critical splitting interval, the pattern to be measured corresponding to the critical splitting interval is used as a pattern to be processed; The pattern to be processed is moved along the second direction and in a direction of decreasing the critical splitting distance by a distance corresponding to the minimum line width of the decomposed pattern.

3. The graphic design method according to claim 2, wherein: The minimum line width of the decomposition pattern is equal to the value of the critical splitting line width.

4. The graphic design method according to claim 1, wherein: The step of setting a critical splitting line width and a critical splitting spacing corresponding to the initial pattern based on a double pattern splitting rule includes: the double pattern splitting rule includes a minimum line width and a minimum spacing of the decomposed pattern; The sum of the minimum spacing of the decomposed pattern and twice the minimum line width is set as the critical splitting spacing corresponding to the initial pattern; The minimum spacing of the decomposed pattern is set to the critical splitting line width corresponding to the initial pattern.

5. The graphic design method according to claim 1, wherein: In the closed loop, the line width of the pattern to be tested is less than or equal to the critical split line width, and the spacing between adjacent patterns to be tested and the spacing between the pattern to be tested and adjacent reference edge patterns is less than or equal to the critical split spacing.

6. The graphic design method according to claim 1, wherein: The initial graphic is an initial active area graphic, and the initial pattern is an initial active area pattern.

7. A mask combination product, characterized in that: The mask combination product includes two masks, and the mask is a mask used to form a pattern designed by the pattern design method according to any one of claims 1 to 6 by using double patterning.

8. A graphic design system, wherein the graphic forming method includes double patterning, characterized in that: include: A providing unit, configured to provide an initial pattern, wherein the initial pattern includes a plurality of initial patterns spaced apart from each other, the initial patterns extending along a first direction, and a direction perpendicular to the first direction being a second direction; A configuration unit, configured to set a critical splitting line width and a critical splitting spacing corresponding to the initial pattern based on a double patterning splitting rule; a reference edge pattern setting unit, configured to set a reference edge pattern with which projections along the second direction overlap; a closed loop acquisition unit, configured to acquire a plurality of patterns to be measured based on the critical splitting line and the critical splitting spacing, and an initial pattern located between the reference edge patterns and overlapping projections of adjacent initial patterns or reference edge patterns along the second direction, wherein the plurality of patterns to be measured and the reference edge patterns form a closed loop; a unit for obtaining the number of patterns to be tested, configured to obtain the number of the patterns to be tested and output the number as a first value; a spacing acquisition unit, wherein the double patterning splitting rule includes a minimum line width for decomposing the pattern, and the spacing acquisition unit is used to obtain the spacing between adjacent patterns to be measured in the closed loop, and the spacing between the pattern to be measured and the adjacent reference edge pattern, and output the spacing as a second value if the spacing is greater than the minimum line width; The judging unit is configured to judge whether the sum of the first value and the second value is an odd number; when the sum of the first value and the second value is an even number, the judging unit is configured to judge whether the initial graphic can be double-graphiced.

9. The graphic design system according to claim 8, wherein: The graphic design system further includes: an analyzing unit, configured to determine whether the closed loop contains a pattern to be tested corresponding to the critical splitting interval when the determining unit determines that the sum of the first value and the second value is an odd number; a marking unit, for marking the pattern to be measured corresponding to the critical splitting interval as a pattern to be processed when the closed loop contains the pattern to be measured corresponding to the critical splitting interval; The adjusting unit is configured to move the pattern to be processed by a distance corresponding to the minimum line width of the decomposed pattern along the second direction and in a direction of reducing the critical splitting interval.

10. The graphic design system according to claim 8, wherein: The double patterning splitting rule includes the minimum line width and minimum spacing of the decomposition pattern; the configuration unit includes: a critical splitting spacing configurator, used to set the sum of the minimum spacing of the decomposition pattern and twice the minimum line width as the critical splitting spacing of the initial pattern; a critical splitting line width configurator, used to set the minimum spacing of the decomposition pattern as the critical splitting line width of the initial pattern.

11. A device, characterized in that The system comprises at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the graphic design method according to any one of claims 1 to 6.

12. A storage medium, characterized in that: The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the graphic design method according to any one of claims 1 to 6.

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