Substrate processing apparatus

Abstract

This invention relates to a substrate processing apparatus. A technique is provided to improve the removal efficiency of a target object in liquid processing. The substrate processing apparatus disclosed herein includes a fluid supply unit, a processing liquid supply unit, and a nozzle. The fluid supply unit supplies a fluid comprising pressurized pure water vapor or water mist. The processing liquid supply unit supplies a processing liquid comprising at least sulfuric acid. The nozzle has a first nozzle outlet, a second nozzle outlet, and an outlet path. The first nozzle outlet ejects the fluid supplied by the fluid supply unit. The second nozzle outlet ejects the processing liquid supplied by the processing liquid supply unit. The outlet path communicates with the first nozzle outlet and the second nozzle outlet, and outlets a mixed fluid of the fluid ejected from the first nozzle outlet and the processing liquid ejected from the second nozzle outlet. Furthermore, the cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first nozzle outlet.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus. Background Technology

[0002] In the manufacturing process of semiconductor devices, a technique is known to remove objects such as resist films from a substrate by supplying a processing liquid to a substrate such as a semiconductor wafer.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-027245 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique that can improve the removal efficiency of the target object in liquid treatment.

[0008] Solution for solving the problem

[0009] A substrate processing apparatus disclosed herein includes a substrate holding section, a fluid supply section, a processing liquid supply section, and a nozzle. The substrate holding section holds the substrate in a manner capable of rotating it. The fluid supply section supplies a fluid comprising pressurized pure water vapor or water mist. The processing liquid supply section supplies a processing liquid comprising at least sulfuric acid. The nozzle is connected to the fluid supply section and the processing liquid supply section, mixing the fluid and the processing liquid and ejecting it onto the substrate. The nozzle further includes a first outlet, a second outlet, and an outlet path. The first outlet ejects the fluid supplied by the fluid supply section. The second outlet ejects the processing liquid supplied by the processing liquid supply section. The outlet path communicates with both the first and second outlets, discharging the mixture of the fluid ejected from the first outlet and the processing liquid ejected from the second outlet. Furthermore, the cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first outlet.

[0010] Alternatively, the nozzle may have a plurality of first nozzle outlets and a plurality of second nozzle outlets, and a discharge path that communicates with the plurality of first nozzle outlets and the plurality of second nozzle outlets.

[0011] Alternatively, the nozzle may have a plurality of first nozzle outlets and a plurality of second nozzle outlets, and a plurality of outlet paths connected to one of the first nozzle outlets and one of the second nozzle outlets.

[0012] Alternatively, the above-mentioned substrate processing apparatus may have a plurality of spray nozzles at the lower end of the discharge path, wherein the cross-sectional area of ​​the spray nozzles is smaller than the cross-sectional area of ​​the discharge path.

[0013] Alternatively, the substrate processing apparatus described above may have an auxiliary nozzle, which is independently disposed relative to the main nozzle, and sprays the fluid onto the substrate.

[0014] The substrate processing apparatus described above may also include: a nozzle moving part that moves the nozzle between a processing position above the substrate holding part and a standby position outside the substrate holding part; and a cleaning mechanism disposed in the standby position for cleaning the nozzle.

[0015] The substrate processing apparatus described above may also include a cleaning mechanism comprising: a cleaning tank that houses the nozzle; a cleaning liquid ejection section that ejects cleaning liquid into the interior of the cleaning tank; and a decondensation member disposed inside the cleaning tank, the decondensation member causing droplets of the cleaning liquid that are between the nozzle and the decondensation member and in contact with both the nozzle and the decondensation member to move from the nozzle toward the decondensation member.

[0016] In the above-mentioned substrate processing apparatus, the hydrophilicity of the dew removal component may be higher than that of the nozzle.

[0017] Alternatively, the processing liquid in the above-mentioned substrate processing apparatus may be an SPM solution, which is a mixture of sulfuric acid and hydrogen peroxide.

[0018] The effects of the invention

[0019] According to this disclosure, the removal efficiency of the target substance can be improved in liquid treatment. Attached Figure Description

[0020] Figure 1 This is a schematic top view of the substrate processing apparatus according to the first embodiment.

[0021] Figure 2 This is a schematic side view of the substrate processing apparatus according to the first embodiment.

[0022] Figure 3 This is a cross-sectional view obtained by cutting the nozzle of the first embodiment with a plane orthogonal to the length direction.

[0023] Figure 4 yes Figure 3 The sectional view shown is taken along line IV-IV.

[0024] Figure 5 yes Figure 3 The cross-sectional view shown is taken from the VV line downwards.

[0025] Figure 6 This is a diagram obtained by viewing the nozzle of the first embodiment from below.

[0026] Figure 7 This is a cross-sectional view obtained by cutting the nozzle cleaning mechanism of the first embodiment with a plane orthogonal to the length direction.

[0027] Figure 8 This is an explanatory diagram of the nozzle cleaning process in the first embodiment.

[0028] Figure 9 This is an explanatory diagram of the nozzle cleaning process in the first embodiment.

[0029] Figure 10 This is an explanatory diagram of the nozzle cleaning process in the first embodiment.

[0030] Figure 11 This is a flowchart illustrating the steps of the processing performed by the substrate processing apparatus of the first embodiment.

[0031] Figure 12 This is a cross-sectional view obtained by cutting the nozzle of the second embodiment with a plane orthogonal to the length direction.

[0032] Figure 13 yes Figure 12 The sectional view shown is taken along line XIII-XIII.

[0033] Figure 14 yes Figure 12 The sectional view shown is taken along line XIV-XIV.

[0034] Figure 15 This is a cross-sectional view obtained by cutting the nozzle of the first modified example of the first embodiment with a plane orthogonal to the length direction.

[0035] Figure 16 This is a cross-sectional view obtained by cutting the nozzle of the second variation of the first embodiment with a plane orthogonal to the length direction. Detailed Implementation

[0036] Hereinafter, the configuration of the substrate processing apparatus for implementing the present disclosure (hereinafter referred to as "Embodiment") will be described in detail with reference to the accompanying drawings. However, the present disclosure is not limited to this embodiment. Furthermore, the various embodiments can be appropriately combined without contradicting the processing content. In the following embodiments, the same reference numerals are used for the same parts, and repeated descriptions are omitted.

[0037] Furthermore, in the embodiments shown below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these expressions do not need to be strictly "constant," "orthogonal," "perpendicular," or "parallel." That is, the above expressions allow for deviations, such as manufacturing precision, setting precision, etc.

[0038] Furthermore, in the accompanying figures below, for ease of understanding, the following situations are made: the X-axis, Y-axis, and Z-axis directions are defined as mutually orthogonal, indicating a Cartesian coordinate system with the positive Z-axis direction set vertically upward. Additionally, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0039] In the semiconductor wafer manufacturing process, a photoresist film is formed in a predetermined pattern on a target film formed on a substrate such as a semiconductor wafer. This photoresist film is then used as a mask to perform etching, ion implantation, and other processes on the target film. After processing, the unwanted photoresist film is removed from the wafer.

[0040] SPM treatment is used as a method for removing resist films. SPM treatment is performed by supplying the resist film with a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution obtained by mixing sulfuric acid and hydrogen peroxide.

[0041] In the embodiments shown below, a substrate processing apparatus that can improve the removal efficiency of the object to be removed in SPM processing will be described.

[0042] Furthermore, the substrate processing apparatus of this disclosure can also be applied to liquid processing other than SPM processing. Specifically, the substrate processing apparatus of this disclosure can be applied to liquid processing using a processing solution containing at least sulfuric acid.

[0043] "A treatment solution containing at least sulfuric acid" other than SPM solution can include, for example, treatment solutions that react when mixed with sulfuric acid (heating or etchant addition), specifically, dilute sulfuric acid (a mixture of sulfuric acid and water), a mixture of sulfuric acid and ozone water, etc. Alternatively, "a treatment solution containing at least sulfuric acid" can also be sulfuric acid itself.

[0044] (First Embodiment)

[0045] <Structure of the substrate processing device>

[0046] First, refer to Figure 1 and Figure 2 The structure of the substrate processing apparatus of the first embodiment will be described. Figure 1 This is a schematic top view of the substrate processing apparatus according to the first embodiment. Additionally, Figure 2This is a schematic side view of the substrate processing apparatus according to the first embodiment. Furthermore, in Figure 2 The second supply mechanism 105 and the nozzle cleaning mechanism 106 are omitted from the diagram.

[0047] like Figure 1 and Figure 2 As shown, the substrate processing apparatus 1 includes: a chamber 101, a substrate holding portion 102, a cup-shaped portion 103, a first supply mechanism 104, a second supply mechanism 105, and a nozzle cleaning mechanism 106. Additionally, the substrate processing apparatus 1 includes: a steam supply portion 201, an SPM supply portion 202, a rinsing fluid supply portion 203, and a replacement fluid supply portion 204. This substrate processing apparatus 1 removes the resist film formed on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as "wafer W").

[0048] Previously, SPM treatment was known as a method for removing resist films. SPM treatment is carried out by supplying the resist film with a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution obtained by mixing sulfuric acid and hydrogen peroxide.

[0049] The removal efficiency of resist film can be improved by increasing the temperature of the SPM solution. One method for increasing the SPM solution temperature is to raise the temperature of the sulfuric acid. However, increasing the sulfuric acid temperature requires improving the heat and pressure resistance of the piping supplying the sulfuric acid, placing a significant burden on the hardware. Another method is to change the mixing ratio of sulfuric acid and hydrogen peroxide to increase the proportion of hydrogen peroxide. However, increasing the proportion of hydrogen peroxide can easily lead to the generation of fumes and bumping. Alternatively, using an infrared heater or similar device to heat the SPM solution on the wafer W can be considered, but this presents issues such as temperature stability.

[0050] Here, for the substrate processing apparatus 1, pressurized pure water (deionized water) vapor (hereinafter referred to as "vapor") is mixed with the SPM liquid. As a result, the temperature of the SPM liquid can be appropriately increased.

[0051] The chamber 101 houses the substrate holding part 102, the cup part 103, the first supply mechanism 104, and the second supply mechanism 105. An FFU (Fan Filter Unit) 111 (see reference) is provided at the top of the chamber 101 to form a downward flow within the chamber 101. Figure 2 ).

[0052] The substrate holding portion 102 includes: a main body portion 121 with a diameter larger than that of the wafer W; a plurality of gripping portions 122 provided on the upper surface of the main body portion 121; a support member 123 supporting the main body portion 121; and a drive portion 124 for rotating the support member 123. Furthermore, the number of gripping portions 122 is not limited to the number shown in the figure.

[0053] The substrate holding portion 102 holds the wafer W by holding the peripheral portion of the wafer W with a plurality of holding portions 122. As a result, the wafer W is held horizontally with its upper surface slightly away from the main body portion 121. As described above, a resist film is formed on the surface (upper surface) of the wafer W.

[0054] In addition, as an example, a substrate holding part 102 is provided here, which uses multiple holding parts 122 to hold the peripheral part of the wafer W. However, the substrate processing apparatus 1 may also have a structure with a vacuum chuck that adsorbs and holds the back side of the wafer W instead of the substrate holding part 102.

[0055] The cup portion 103 is arranged to surround the substrate holding portion 102. At the bottom of the cup portion 103, there is a drain port 131 for discharging the processing liquid supplied to the wafer W to the outside of the chamber 101 and an exhaust port 132 for exhausting the atmosphere inside the chamber 101.

[0056] The first supply mechanism 104 includes: a nozzle 141, a first arm 142 extending horizontally and supporting the nozzle 141 from above, and a first rotary lifting mechanism 143 for rotating and lifting the first arm 142. Using the first rotary lifting mechanism 143, the first arm 142 can move the nozzle 141 between a processing position above the wafer W and a standby position outside the wafer W.

[0057] Nozzle 141 is a rod-shaped nozzle extending in a straight line along the horizontal direction. Nozzle 141 has a length that is the same as the radius of wafer W. When positioned in the processing position, the tip of nozzle 141 in the longitudinal direction is positioned above the center of wafer W, and the base of nozzle 141 in the longitudinal direction is positioned above the periphery of wafer W.

[0058] Nozzle 141 is connected to steam supply unit 201 via steam supply path 211. Nozzle 141 is also connected to SPM supply unit 202 via SPM supply path 221. Steam supply unit 201 supplies pressurized pure water (deionized water) steam to nozzle 141 via steam supply path 211. SPM supply unit 202 supplies a mixture of sulfuric acid and hydrogen peroxide, i.e., SPM solution, to nozzle 141 via SPM supply path 221. Any known technology can be used for the structure of steam supply unit 201 and SPM supply unit 202. For example, SPM supply unit 202 includes a sulfuric acid supply source for supplying sulfuric acid, a hydrogen peroxide supply source for supplying hydrogen peroxide, and a mixing unit for mixing sulfuric acid and hydrogen peroxide.

[0059] Nozzle 141 mixes steam supplied from steam supply unit 201 with SPM liquid supplied from SPM supply unit 202 and sprays it toward wafer W. The specific structure of nozzle 141 will be described later.

[0060] The second supply mechanism 105 includes: an auxiliary nozzle 151, a second arm 152 extending horizontally and supporting the auxiliary nozzle 151 from above, and a second rotary lifting mechanism 153 for rotating and lifting the second arm 152. Using the second rotary lifting mechanism 153, the second arm 152 can move the auxiliary nozzle 151 between a processing position above the wafer W and a standby position outside the wafer W.

[0061] The auxiliary nozzle 151 is connected to the steam supply unit 201 via a steam supply path 212. The steam supply unit 201 supplies steam to the auxiliary nozzle 151 via the steam supply path 212. Additionally, the auxiliary nozzle 151 is connected to the flushing fluid supply unit 203 via a flushing fluid supply path 231 and to the replacement fluid supply unit 204 via a replacement fluid supply path 241. The flushing fluid supply unit 203 supplies flushing fluid to the auxiliary nozzle 151 via the flushing fluid supply path 231; in this example, this is pure water (deionized water). The replacement fluid supply unit 204 supplies replacement fluid to the auxiliary nozzle 151 via the replacement fluid supply path 241; in this example, this is IPA (isopropanol). Any known technology may be used for the structure of the flushing fluid supply unit 203 and the replacement fluid supply unit 204.

[0062] The auxiliary nozzle 151 sprays steam supplied from the steam supply unit 201 via the steam supply path 212 onto the wafer W. Additionally, the auxiliary nozzle 151 sprays rinsing fluid supplied from the rinsing fluid supply unit 203 via the rinsing fluid supply path 231 onto the wafer W. Furthermore, the auxiliary nozzle 151 sprays replacement fluid supplied from the replacement fluid supply unit 204 via the replacement fluid supply path 241 onto the wafer.

[0063] The nozzle cleaning mechanism 106 is positioned in the standby position of the nozzle 141. The nozzle cleaning mechanism 106 is used to clean the nozzle 141. The structure of the nozzle cleaning mechanism 106 will be described later.

[0064] Additionally, the substrate processing apparatus 1 includes a control device 300. The control device 300 is, for example, a computer, and includes a control unit 301 and a storage unit 302. The storage unit 302 stores programs that control various processes performed by the substrate processing apparatus 1. The control unit 301 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 302.

[0065] Furthermore, the program can also be a program stored on a computer-readable storage medium, and a program installed from that storage medium into the storage unit 302 of the control device 300. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0066] <Nose Structure>

[0067] Next, refer to Figures 3-6 The structure of nozzle 141 will be described. Figure 3 This is a cross-sectional view obtained by cutting the nozzle 141 of the first embodiment with a plane orthogonal to the length direction. Additionally, Figure 4 yes Figure 3 The sectional view shown is taken along line IV-IV from below. Additionally, Figure 5 yes Figure 3 The cross-sectional view shown is taken from below along the VV line. Additionally... Figure 6 This is a diagram obtained by viewing the nozzle 141 of the first embodiment from below.

[0068] like Figure 3 As shown, the nozzle 141 has: a nozzle body 41, two first dispensing paths 42, a second dispensing path 43, and an outlet path 44. Additionally, the nozzle 141 has a plurality of first outlets 45 and a plurality of first outlet paths 46 (see reference). Figure 4 ) and multiple second jet outlets 47 and multiple second jet paths 48 (see reference) Figure 5 ).

[0069] The first distribution path 42 and the second distribution path 43 are formed inside the nozzle body 41. For example... Figure 4 and Figure 5 As shown, the first distribution path 42 and the second distribution path 43 extend along the length of the nozzle body 41. The first distribution path 42 is connected to the steam supply section 201 via the steam supply path 211. In addition, the second distribution path 43 is connected to the SPM supply section 202 via the SPM supply path 221.

[0070] like Figure 3 As shown, the second distribution path 43 is positioned on the centerline of the nozzle body 41 in cross-section (the line that bisects the nozzle body 41 to the left and right). Additionally, two first distribution paths 42 are positioned on the left and right sides of the second distribution path 43.

[0071] Export path 44 is located below the first allocation path 42 and the second allocation path 43. For example... Figures 3-5 As shown, the outlet path 44 is a slit-shaped flow path located at the lower part of the nozzle body 41, extending along the length direction of the nozzle body 41 and also extending vertically downward. The outlet path 44 is open at both ends and at the lower end in the length direction (the same direction as the length direction of the nozzle body 41).

[0072] Multiple first jet outlets 45 and multiple second jet outlets 47 open at the upper end face of the outlet path 44. For example... Figure 4 and Figure 5 As shown, a plurality of first nozzle outlets 45 and a plurality of second nozzle outlets 47 are arranged along the length of the nozzle body 41. The plurality of first nozzle outlets 45 and the plurality of second nozzle outlets 47 are arranged over approximately the entire area from one end to the other along the length of the outlet path 44.

[0073] Multiple first nozzles 45 are connected to a first distribution path 42 via multiple first discharge paths 46. In addition, multiple second nozzles 47 are connected to a second distribution path 43 via multiple second discharge paths 48.

[0074] Steam supplied from the steam supply unit 201 to the first distribution path 42 is distributed from the first distribution path 42 to a plurality of first ejection paths 46, and ejected from a plurality of first ejection outlets 45 to the outlet path 44. Additionally, SPM liquid supplied from the SPM supply unit 202 to the second distribution path 43 is distributed from the second distribution path 43 to a plurality of second ejection paths 48, and ejected from a plurality of second ejection outlets 47 to the outlet path 44.

[0075] The steam ejected from the first nozzle 45 and the SPM liquid ejected from the second nozzle 47 mix near the upper end of the inlet, which serves as the outlet path 44, and are ejected from the lower end of the outlet, which serves as the outlet path 44, toward the wafer W.

[0076] If nozzle 141 does not have an outlet path 44, the droplets of SPM liquid ejected from nozzle 141 will diffuse, which may prevent proper mixing of SPM liquid and vapor. In addition, the diffused SPM liquid adheres to the inner wall of chamber 101, which may contaminate chamber 101 and the wafer W inside chamber 101.

[0077] In contrast, the nozzle 141 of the first embodiment has an outlet path 44, which can suppress the diffusion of steam ejected from the first outlet 45 without contacting the SPM liquid. Therefore, the nozzle 141 can efficiently mix steam and SPM liquid. Thus, the nozzle 141 according to the embodiment can raise the SPM liquid to a higher temperature compared to, for example, a nozzle without an outlet path 44. In addition, contamination within the chamber 101 caused by the diffusion of SPM liquid can be suppressed.

[0078] In addition, such as Figure 6 As shown, the cross-sectional area of ​​the exit path 44 is larger than the cross-sectional area of ​​the first nozzle 45. For example, the cross-sectional area of ​​the exit path 44 is synonymous with the opening area at the lower end of the exit path 44, and can be represented by D0×L0 when the width of the exit path 44 is set to D0 and the length is set to L0. Similarly, the cross-sectional area of ​​the first nozzle 45 is synonymous with the opening area of ​​the first nozzle 45, and can be represented by (D1 / 2) when the diameter of the first nozzle 45 is D1. 2 The cross-sectional area of ​​the first nozzle 45 mentioned here can also refer to the sum of the cross-sectional areas of the plurality of first nozzles 45 of the nozzle 141. Furthermore, the cross-sectional area of ​​the exit path 44 is larger than the sum of the cross-sectional areas of the plurality of first nozzles 45 and the plurality of second nozzles 47.

[0079] When the cross-sectional area of ​​the exit path 44 is too large, the velocity of the SPM liquid droplets passing through the exit path 44 decreases, and therefore the SPM liquid droplets moving along the inner wall of the exit path 44 tend to aggregate and become large particles. On the other hand, when the cross-sectional area of ​​the exit path 44 is too small, the flow rate of vapor within the exit path 44 is less restricted, and therefore the formation of SPM liquid droplets near the inlet of the exit path 44 may not occur properly, potentially resulting in droplet sizes larger than desired. Therefore, it is desirable for the cross-sectional area of ​​the exit path 44 to be of an appropriate size, enabling the SPM liquid droplets to be ejected onto the wafer W in a sufficiently micronized state.

[0080] Therefore, for the nozzle 141 of the first embodiment, as described above, the cross-sectional area of ​​the outlet path 44 is formed to be larger than the cross-sectional area of ​​the first nozzle outlet 45. By forming it in this way, the droplets of the SPM liquid can be appropriately atomized.

[0081] <Structure of the Nozzle Cleaning Mechanism>

[0082] Next, refer to Figure 7 The structure of the nozzle cleaning mechanism 106 will be described. Figure 7 This is a cross-sectional view obtained by cutting the nozzle cleaning mechanism 106 of the first embodiment with a plane orthogonal to the length direction.

[0083] like Figure 7 As shown, the nozzle cleaning mechanism 106 has a cleaning tank 161, two cleaning fluid supply paths 162, multiple cleaning fluid spray outlets 163, and a discharge outlet 164. Additionally, the nozzle cleaning mechanism 106 has a decondensation removal component 165.

[0084] The cleaning tank 161 is formed in an elongated shape to match the shape of the nozzle body 41. The cleaning tank 161 can accommodate the nozzle 141. A cleaning fluid supply path 162 is formed inside the nozzle cleaning mechanism 106 and extends along the length direction (Y-axis direction) of the cleaning tank 161. The cleaning fluid supply path 162 is connected to a cleaning fluid supply source (not shown) for the flow of cleaning fluid supplied from this source. The cleaning fluid is, for example, pure water (deionized water). Two cleaning fluid supply paths 162 are arranged on the left and right sides of the cleaning tank 161.

[0085] Multiple cleaning fluid nozzles 163 are opened on the inner wall of the cleaning tank 161. The multiple cleaning fluid nozzles 163 are arranged along the length of the cleaning tank 161. The multiple cleaning fluid nozzles 163 are connected to the cleaning fluid supply path 162, spraying the cleaning fluid flowing in the cleaning fluid supply path 162 into the interior of the cleaning tank 161. A discharge port 164 is located at the bottom of the cleaning tank 161, discharging the cleaning fluid from the cleaning tank 161.

[0086] A decondensation-removing component 165 is disposed inside the cleaning tank 161. The decondensation-removing component 165 is an elongated strip-shaped component extending along the length of the cleaning tank 161. The decondensation-removing component 165 is formed of a component with a higher hydrophilicity than the nozzle body 41 of the nozzle 141. For example, the nozzle body 41 is formed of resin, while the decondensation-removing component 165 is formed of quartz. In the illustrated example, the cross-sectional shape of the decondensation-removing component 165 is circular, but the cross-sectional shape of the decondensation-removing component 165 does not necessarily have to be circular.

[0087] In addition, the nozzle cleaning mechanism 106 has an overflow line (not shown) for discharging more than a certain amount of cleaning fluid from the cleaning tank 161 when a certain amount of cleaning fluid is stored in the cleaning tank 161. The overflow line is positioned, for example, below the plurality of cleaning fluid nozzles 163.

[0088] Next, refer to Figures 8-10 The cleaning process of nozzle 141 using the nozzle cleaning mechanism 106 will be described. Figures 8-10 This is an explanatory diagram of the nozzle cleaning process in the first embodiment. Figures 8-10 The nozzle cleaning process shown is performed according to the control unit 301 (see reference). Figure 1 It is executed under the control of ).

[0089] like Figure 8As shown, the control unit 301 first moves the nozzle 141 into the cleaning tank 161. Thus, the nozzle 141 is positioned in the cleaning tank 161 of the nozzle cleaning mechanism 106. At this time, the nozzle 141 is positioned close to the de-condensation member 165 to a degree that it does not contact the de-condensation member 165.

[0090] Next, the control unit 301 causes the cleaning fluid to be sprayed out from multiple cleaning fluid spray outlets 163. After the cleaning fluid is sprayed out onto the side of the nozzle body 41 disposed in the cleaning tank 161, it flows downward along the gap between the side of the nozzle body 41 and the inner surface of the cleaning tank 161.

[0091] like Figure 9 As shown, the cleaning fluid is stored in the cleaning tank 161 by continuous supply. Consequently, at least a portion of the lower part, including the nozzle body 41, is immersed in the cleaning fluid. Furthermore, excess cleaning fluid is discharged from an overflow line (not shown).

[0092] In this way, the nozzle cleaning mechanism 106 sprays cleaning fluid from multiple cleaning fluid outlets 163 toward the side of the nozzle body 41, and cleans the nozzle 141 by immersing it in the cleaning fluid stored in the cleaning tank 161. Specifically, it can remove SPM fluid adhering to the nozzle 141.

[0093] Next, the control unit 301 raises the nozzle 141. At this time, the cleaning fluid adhering to the nozzle 141 gathers downwards due to gravity. Furthermore, the cleaning fluid adhering to the nozzle 141 moves towards the dehumidification member 165, which has a higher hydrophilicity than the nozzle 141. As a result, the cleaning fluid is removed from the nozzle 141, and the nozzle 141 is dried.

[0094] The nozzle 141 of the first embodiment has an outlet path 44, and therefore has a more complex structure compared to a nozzle without an outlet path 44. Therefore, when using a gas such as N2 (nitrogen) to dry the nozzle 141, it is preferable to increase the gas ejection flow rate. However, increasing the gas ejection flow rate may cause changes in the internal pressure of the chamber 101, affecting the processing of the wafer W. To address this, the nozzle cleaning mechanism 106 of the first embodiment has a dehumidification member 165 with a higher hydrophilicity than the nozzle 141, thus enabling the nozzle 141 to be dried without using gas. Specifically, the dehumidification member 165 causes droplets of cleaning fluid that are between the nozzle 141 and the dehumidification member 165 and in contact with both the nozzle 141 and the dehumidification member 165 to move from the nozzle 141 to the dehumidification member 165.

[0095] Therefore, the nozzle cleaning mechanism 106 according to the first embodiment can dry the nozzle 141 without affecting the processing of the wafer W.

[0096] <Specific Operations of the Substrate Processing Device>

[0097] Next, refer to Figure 11 The specific operation of the substrate processing apparatus 1 will be explained. Figure 11 This is a flowchart illustrating the processing steps performed by the substrate processing apparatus 1 according to the first embodiment. Figure 11 The series of processes shown are executed according to the control of the control unit 301.

[0098] First, a wafer W is fed into the substrate processing apparatus 1 (step S101). Specifically, the wafer W is fed into the chamber 101 of the substrate processing apparatus 1 (see reference 101) using a substrate transport device disposed outside the substrate processing apparatus 1. Figure 1 The substrate is held in the substrate holding section 102. After this, the substrate processing apparatus 1 rotates the substrate holding section 102 at a predetermined rotational speed.

[0099] Next, SPM processing is performed on the substrate processing apparatus 1 (step S102). First, the first rotary lifting mechanism 143 moves the nozzle 141 from the standby position to the processing position on the wafer W. After this, a mixture of steam and SPM liquid is ejected from the nozzle 141 onto the surface of the wafer W. As a result, the resist film formed on the surface of the wafer W is removed.

[0100] Furthermore, in the substrate processing apparatus 1, an auxiliary nozzle 151 can also be used in the SPM process. When using the auxiliary nozzle 151, the second rotary lifting mechanism 153 positions the auxiliary nozzle 151 above the wafer W. Specifically, the auxiliary nozzle 151 is positioned at a location where the steam supply might be insufficient using only the nozzle 141, such as the outer periphery of the wafer W. After this, steam is ejected from the auxiliary nozzle 151 onto the surface of the wafer W.

[0101] In this way, by using the auxiliary nozzle 151, steam can be supplied more evenly to the entire surface of the wafer W. Therefore, the temperature of the SPM liquid can rise more evenly across the entire surface of the wafer W.

[0102] When the SPM processing in step S102 is completed, a rinsing process is performed in the substrate processing apparatus 1 (step S103). In this rinsing process, rinsing fluid (pure water) is supplied to the surface of the wafer W through the auxiliary nozzle 151. The rinsing fluid supplied to the wafer W diffuses on the surface of the wafer W due to the centrifugal force generated by the rotation of the wafer W. As a result, the SPM fluid remaining on the wafer W is rinsed away by the rinsing fluid.

[0103] Next, a displacement process is performed in the substrate processing apparatus 1 (step S104). In the displacement process, a displacement solution (IPA) is supplied to the surface of the wafer W through the auxiliary nozzle 151. The displacement solution supplied to the wafer W diffuses on the surface of the wafer W due to the centrifugal force generated by the rotation of the wafer W. As a result, the rinsing solution remaining on the wafer W is replaced by the displacement solution.

[0104] Next, a drying process is performed in the substrate processing apparatus 1 (step S105). During this drying process, the rotational speed of the wafer W is increased. This removes the residual replacement solution from the wafer W, drying it. After this, the rotation of the wafer W is stopped.

[0105] Next, a delivery process is performed in the substrate processing apparatus 1 (step S106). In the delivery process, the wafer W held in the substrate holding section 102 is transferred to an external substrate transport device. When the delivery process is completed, substrate processing for one wafer W is completed.

[0106] Furthermore, the above-mentioned nozzle cleaning process is performed after the SPM process on a certain wafer W is completed, and can be completed until the SPM process on the next wafer W begins.

[0107] (Second Implementation)

[0108] Next, refer to Figures 12-14 The structure of the nozzle in the second embodiment will be described. Figure 12 This is a cross-sectional view obtained by cutting the nozzle of the second embodiment with a plane orthogonal to the length direction. Additionally, Figure 13 yes Figure 12 The sectional view shown is taken along line XIII-XIII. Figure 14 yes Figure 12 The sectional view shown is taken along line XIV-XIV.

[0109] like Figure 12 As shown, the nozzle 141A of the second embodiment is a so-called internal mixing type two-fluid nozzle. The nozzle 141A has an elongated nozzle body 41A and multiple first supply paths 42A (see reference). Figure 13 ), multiple second supply paths 43A (refer to) Figure 14 ) and multiple export paths 44A (see reference) Figure 14 Additionally, nozzle 141A has multiple first nozzle outlets 45A (see reference). Figure 13 ) and multiple second jet outlets 47A (refer to Figure 14 ).

[0110] The second supply path 43A supplies SPM liquid to the interior of the nozzle body 41A. The second supply path 43A and the outlet path 44A extend vertically and are arranged coaxially. The second supply path 43A has an inlet portion 431 and a throttling portion 432. The inlet portion 431 corresponds to the upstream flow path of the second supply path 43A, and the throttling portion 432 corresponds to the downstream flow path of the second supply path 43A. Furthermore, the throttling portion 432 is formed with a cross-sectional area smaller than the cross-sectional area (diameter) of the inlet portion 431.

[0111] The outlet of the throttling section 432 is configured close to the inlet of the outlet path 44A. Furthermore, it is preferable that the cross-sectional area of ​​the throttling section 432 is constant from the inlet to the outlet, and it is preferable that the cross-sectional shape of the throttling section 432 is, for example, circular or elliptical. As shown in the figure, when the cross-sectional area of ​​the throttling section 432 is constant from the inlet to the outlet, the cross-sectional area (diameter) of the second jet outlet 47A, which serves as the outlet of the second supply path 43A, is equal to the cross-sectional area (diameter) of the throttling section 432.

[0112] Around the second supply path 43A, an annular inlet space 49 is formed in a manner that surrounds the throttling section 432.

[0113] The first supply path 42A supplies steam to the interior of the nozzle body 41A. Specifically, the first nozzle outlet 45A, which is the outlet of the first supply path 42A, is connected to the inlet space 49, and steam is supplied to the inlet space 49.

[0114] The second supply path 43A is configured to pass through the inner side of the inlet space 49. The inlet space 49 is formed as a cylinder with an annular cross-sectional shape. An annular portion 491 and a conical portion 492 with a diameter decreasing downwards are formed in the inlet space 49. The conical portion 492 is formed on the downstream side of the annular portion 491, and its outlet is annularly open between the outlet of the throttling section 432 of the second supply path 43A and the inlet of the outlet path 44A. Therefore, the steam introduced into the inlet space 49 mixes with the SPM liquid supplied from the throttling section 432 of the second supply path 43A near the inlet of the outlet path 44A, thereby forming a mixed fluid of SPM liquid (SPM liquid droplets).

[0115] The first nozzle 45A, serving as the outlet of the first supply path 42A, opens into the inner wall of the annular portion 491 of the inlet space 49. The first supply path 42A has an inlet portion 421 and a throttling portion 422. The inlet portion 421 corresponds to the flow path on the upper flow side of the first supply path 42A, and the throttling portion 422 corresponds to the flow path on the lower flow side of the first supply path 42A. Furthermore, the throttling portion 422 is formed with a cross-sectional area smaller than the cross-sectional area (diameter) of the inlet portion 431. The outlet of the throttling portion 422 corresponds to the first nozzle 45A and opens into the inner surface of the annular portion 491. Preferably, the cross-sectional area of ​​the throttling portion 422 is constant from the inlet to the outlet, and preferably, the cross-sectional shape of the throttling portion 422 is, for example, circular or elliptical. As shown in the figure, when the cross-sectional area of ​​the throttling section 422 is constant from the inlet to the outlet, the cross-sectional area (diameter) of the first jet outlet 45A, which is the outlet of the second supply path 43A, is equal to the cross-sectional area (diameter) of the throttling section 422.

[0116] As previously described, the outlet path 44A and the second supply path 43A are arranged coaxially and are connected to the second supply path 43A and the inlet space 49. Preferably, the outlet path 44A is formed as a straight line, and the cross-sectional area (diameter) of the outlet path 44A is constant from the inlet to the outlet. Preferably, the cross-sectional shape of the outlet path 44A is, for example, circular or elliptical.

[0117] Steam introduced from the first supply path 42A via the inlet space 49 and SPM liquid introduced from the second supply path 43A mix near the inlet of the outlet path 44A. As a result, numerous droplets of SPM liquid are formed, and the formed droplets, together with the steam, are discharged to the outside via the outlet path 44A.

[0118] Multiple injection ports 442 are provided at the top of the outlet path 44A. The injection ports 442 are formed as throttling orifices with a cross-sectional area smaller than that of the outlet path 44A. In the absence of injection ports 442 with such throttling orifices, droplets growing along the inner wall of the outlet path 44A are directly ejected. Preferably, the cross-sectional area of ​​the injection ports 442 is constant from the inlet to the outlet, and preferably, the cross-sectional shape of the injection ports 442 is, for example, circular or elliptical. Droplets passing through the outlet path 44A are atomized again and ejected during their passage through the injection ports 442. Therefore, even if droplets grow large during their movement along the inner wall of the outlet path 44A, they can be atomized into sufficiently small particles and ejected by passing through the injection ports 442.

[0119] like Figure 13As shown, multiple first supply paths 42A are arranged along the length of the nozzle body 41A. The first supply paths 42A are connected to the steam supply section 201 via a steam supply path 211. Furthermore, as... Figure 14 As shown, multiple second supply paths 43A are also arranged along the length of the nozzle body 41A. The second supply paths 43A are connected to the SPM supply section 202 via the SPM supply path 221.

[0120] like Figures 12-14 As shown, the nozzle 141A of the second embodiment has a plurality of first nozzle outlets 45A and a plurality of second nozzle outlets 47A, and has a plurality of outlet paths 44A communicating with a first nozzle outlet 45A and a second nozzle outlet 47A.

[0121] <Variation Example>

[0122] Figure 15 This is a cross-sectional view obtained by cutting the nozzle of the first modified example of the first embodiment with a plane orthogonal to the length direction.

[0123] like Figure 15 As shown, the nozzle body 41B of the first modified example nozzle 141B has an outlet path 44B. While the outlet path 44 of the first embodiment described above is open at both ends and the lower end along its length, the outlet path 44B of the first modified example is closed at both ends and the lower end, and an injection port 442B is formed at the lower end of the outlet path 44B. Multiple injection ports 442B are provided at the lower end of the outlet path 44B along the length of the nozzle 141B.

[0124] In this way, the outlet path 44B of nozzle 141B can also have multiple injection ports 442B.

[0125] Figure 16 This is a cross-sectional view obtained by cutting the nozzle of the second variation of the first embodiment with a plane orthogonal to the length direction.

[0126] like Figure 16 As shown, the nozzle 141C of the second modification has a nozzle body 41C. The nozzle body 41C has a flange 411 extending horizontally outward from the lower end of the nozzle body 41C, that is, from the lower end of the outlet path 44 toward the nozzle body 41C. In this way, by providing the flange 411, the vapor ejected from the outlet path 44 can be retained near the surface of the wafer W, thus further promoting the mixing of vapor and SPM liquid. In addition, this flange 411 can also be provided in the nozzle 141A of the second embodiment.

[0127] <Other variations>

[0128] In the above embodiments and modifications, examples involving a mixture of steam and SPM liquid have been described, but water mist can also be used instead of steam. That is, a water mist supply unit that supplies pressurized pure water mist can be provided instead of a steam supply unit 201.

[0129] In the various embodiments and modifications described above, a substrate processing apparatus for removing a resist film formed on the surface of a substrate was used as an example. That is, an example was described for the case where the object to be removed by SPM treatment is a resist film. However, the object to be removed by SPM treatment is not limited to a resist film. For example, the object to be removed by SPM treatment can also be residue (organic matter) after ashing. In addition, the object to be removed by SPM treatment can also be useless substances contained in the abrasive after CMP (chemical mechanical polishing).

[0130] In the first embodiment described above, the positions of the first nozzle 45 and the second nozzle 47 can also be reversed. That is, the steam or water mist can also be directed to... Figure 3 The SPM liquid is ejected from the position of the second nozzle 47, as shown, causing it to be ejected from the position of the first nozzle 45. Similarly, in the second embodiment, the positions of the first nozzle 45A and the second nozzle 47A can also be reversed. That is, steam or water mist can also be ejected from... Figure 12 The SPM liquid is ejected from the second nozzle 47A as shown, causing the SPM liquid to be ejected from the first nozzle 45A.

[0131] As described above, the substrate processing apparatus of the embodiment (substrate processing apparatus 1, for example) includes: a substrate holding section (substrate holding section 102, for example), a fluid supply section (vapor supply section 201, for example), a processing liquid supply section (SPM supply section 202, for example), and nozzles (nozzles 141, 141A to 141C, for example). The substrate holding section holds the substrate in a manner that allows the substrate (wafer W, for example) to rotate. The fluid supply section supplies a fluid (for example, steam or water mist) containing pressurized pure water. The processing liquid supply section supplies a processing liquid (for example, SPM liquid) containing at least sulfuric acid. The nozzles are connected to the fluid supply section and the processing liquid supply section, and the fluid and processing liquid are mixed and sprayed onto the substrate. Furthermore, the nozzle has: a first nozzle outlet (for example, first nozzle outlets 45 and 45A), a second nozzle outlet (for example, second nozzle outlets 47 and 47A), and an outlet path (for example, outlet paths 44, 44A, and 44B). The first nozzle outlet is used to eject fluid supplied from the fluid supply unit. The second nozzle outlet is used to eject treatment liquid supplied from the treatment liquid supply unit. The outlet path communicates with the first nozzle outlet and the second nozzle outlet, and ejects a mixed fluid of the fluid ejected from the first nozzle outlet and the treatment liquid ejected from the second nozzle outlet. Additionally, the cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first nozzle outlet.

[0132] According to the embodiment of the substrate processing apparatus, the diffusion of fluid ejected from the first nozzle can be suppressed by utilizing the outlet path. This allows for efficient mixing of the fluid and the SPM liquid, and also enables efficient increase in the temperature of the SPM liquid. Therefore, the substrate processing apparatus according to the embodiment can improve the removal efficiency of the target material in SPM processing.

[0133] The nozzle (for example, nozzles 141, 141B, 141C) may also have multiple first spray outlets (for example, first spray outlet 45) and multiple second spray outlets (for example, second spray outlet 47). In addition, the nozzle may also have an outlet path (for example, outlet path 44) communicating with the multiple first spray outlets and the multiple second spray outlets.

[0134] The nozzle (for example, nozzle 141A) may also have multiple first spray outlets (for example, first spray outlet 45A) and multiple second spray outlets (for example, second spray outlet 47A). In addition, the nozzle may also have multiple outlet paths (for example, outlet path 44A) communicating with a first spray outlet and a second spray outlet.

[0135] The exit path (for example, exit paths 44A and 44B) may also have multiple nozzles at its lower end (for example, nozzles 442 and 442B). In this case, the cross-sectional area of ​​the nozzles may be smaller than that of the exit path. Thus, even if the SPM liquid droplets grow large during their movement along the inner wall of the exit path, they can be atomized into sufficiently small particles and ejected by passing them through the nozzles.

[0136] The substrate processing apparatus of the embodiment may also have an auxiliary nozzle (as an example, auxiliary nozzle 151) that is separately provided from the nozzle and sprays fluid onto the substrate. By using the auxiliary nozzle, steam can be supplied more evenly to the entire surface of the substrate. Therefore, the temperature of the SPM liquid can rise more evenly across the entire surface of the substrate.

[0137] The substrate processing apparatus of the embodiment may also have a nozzle moving part (for example, the first arm 142) that moves the nozzle between a processing position above the substrate holding part and a standby position outside the substrate holding part. Additionally, the substrate processing apparatus may also have a cleaning mechanism (for example, a nozzle cleaning mechanism 106) disposed in the standby position for cleaning the nozzle. By having a nozzle cleaning mechanism, SPM liquid adhering to the nozzle 141 can be removed.

[0138] The cleaning mechanism may also include: a cleaning tank for receiving the nozzle (as an example, cleaning tank 161), a cleaning fluid spraying section for spraying cleaning fluid into the cleaning tank (as an example, cleaning fluid spray outlet 163), and a decondensation member disposed inside the cleaning tank (as an example, decondensation member 165). The decondensation member causes droplets of cleaning fluid that are between the nozzle and the decondensation member and in contact with both the nozzle and the decondensation member to move from the nozzle to the decondensation member. Thus, the nozzle can be dried without using gases such as N2.

[0139] The dew-removing component is more hydrophilic than the nozzle. This allows the cleaning fluid adhering to the nozzle to move appropriately towards the dew-removing component.

[0140] It should be considered that the embodiments disclosed herein are illustrative and not restrictive in all respects. In fact, the above embodiments can be implemented in various forms. Furthermore, the above embodiments can also be omitted, substituted, or modified in various forms without departing from the claims and their spirit.

Claims

1. A substrate processing apparatus, characterized in that, The substrate processing apparatus has: A substrate holding section holds the substrate in a manner that allows the substrate to be rotated. The fluid supply unit supplies a fluid containing pressurized pure water, either steam or water mist. A treatment solution supply unit that supplies treatment solutions containing at least sulfuric acid; and A nozzle, connected to the fluid supply unit and the processing liquid supply unit, mixes the fluid and the processing liquid and sprays them onto the substrate. The nozzle has: The first nozzle ejects the fluid supplied from the fluid supply unit; The second nozzle ejects the treatment liquid supplied from the treatment liquid supply unit; as well as An export path, which communicates with the first and second spray outlets, exports a mixed fluid of the fluid ejected from the first spray outlet and the treatment liquid ejected from the second spray outlet. The cross-sectional area of ​​the outgoing path is larger than the cross-sectional area of ​​the first nozzle. The outlet path has multiple injection ports at its lower end. The cross-sectional area of ​​the injection port is smaller than the cross-sectional area of ​​the outlet path.

2. The substrate processing apparatus according to claim 1, characterized in that, The nozzle has a plurality of first spray outlets and a plurality of second spray outlets, and has a discharge path that communicates with the plurality of first spray outlets and the plurality of second spray outlets.

3. The substrate processing apparatus according to claim 1, characterized in that, The nozzle has a plurality of first spray outlets and a plurality of second spray outlets, and has a plurality of outlet paths that communicate with one of the first spray outlets and one of the second spray outlets.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The substrate processing apparatus has an auxiliary nozzle that is independently disposed relative to the main nozzle and sprays the fluid onto the substrate.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The substrate processing apparatus includes: A nozzle moving part that moves the nozzle between a processing position above the substrate holding part and a standby position outside the substrate holding part; and A cleaning mechanism, which is configured in the standby position, is used to clean the nozzle.

6. The substrate processing apparatus according to claim 5, characterized in that, The cleaning mechanism has: A cleaning tank that houses the nozzle; The cleaning fluid spraying section sprays cleaning fluid into the cleaning tank; and Dew-removing components are disposed inside the cleaning tank. The decondensation member causes droplets of the cleaning fluid, which are located between the nozzle and the decondensation member and in contact with both the nozzle and the decondensation member, to move from the nozzle toward the decondensation member.

7. The substrate processing apparatus according to claim 6, characterized in that, The hydrophilicity of the dew-removing component is higher than that of the nozzle.

8. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, The treatment solution is an SPM solution, which is a mixture of sulfuric acid and hydrogen peroxide.

9. A substrate processing apparatus, characterized in that, The substrate processing apparatus has: A substrate holding section holds the substrate in a manner that allows the substrate to be rotated. The fluid supply unit supplies a fluid containing pressurized pure water, either steam or water mist. A treatment solution supply unit that supplies treatment solutions containing at least sulfuric acid; and A nozzle, connected to the fluid supply unit and the processing liquid supply unit, mixes the fluid and the processing liquid and sprays them onto the substrate. The nozzle has: The first nozzle ejects the fluid supplied from the fluid supply unit; The second nozzle ejects the treatment liquid supplied from the treatment liquid supply unit; as well as An export path, which communicates with the first and second spray outlets, exports a mixed fluid of the fluid ejected from the first spray outlet and the treatment liquid ejected from the second spray outlet. The cross-sectional area of ​​the outgoing path is larger than the cross-sectional area of ​​the first nozzle. The substrate processing apparatus further comprises: A nozzle moving part that moves the nozzle between a processing position above the substrate holding part and a standby position outside the substrate holding part; and A cleaning mechanism, configured in the standby position, is used to clean the nozzle. The cleaning mechanism has: A cleaning tank that houses the nozzle; The cleaning fluid spraying section sprays cleaning fluid into the cleaning tank. as well as Dew-removing components are disposed inside the cleaning tank. The decondensation member causes droplets of the cleaning fluid, which are located between the nozzle and the decondensation member and in contact with both the nozzle and the decondensation member, to move from the nozzle toward the decondensation member.

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