An integrated photovoltaic-thermoelectric flexible power generation device, its preparation method and application

Abstract

The present invention discloses an integrated photovoltaic-thermoelectric flexible power generation device, its preparation method and application, belonging to the technical field of photovoltaic thermoelectricity, and solves the technical problems of the existing flexible power generation devices that fail to achieve full-spectrum solar energy utilization, have low conversion efficiency, insufficient power supply, and the maximum output power of each power generation module is mutually restricted. The integrated photovoltaic-thermoelectric flexible power generation device disclosed by the present invention combines a solar cell and a thermoelectric device to realize the utilization of the entire solar spectrum. At the same time, with the photonic crystal layer as the hot end and the ambient temperature as the cold end, the thermoelectric power generation is increased, the heat accumulation of the photovoltaic cell is reduced, and the maximum power generation capabilities of the photovoltaic module and the thermoelectric module are achieved respectively; a perovskite solar cell with good low-light performance is used as the power output of the photovoltaic power generation module to ensure stable power supply.

Description

Technical Field

[0001] The invention belongs to the technical field of photovoltaic thermoelectricity, and particularly relates to an integrated photovoltaic-thermoelectric flexible power generation device, a preparation method thereof, and an application thereof. Background Art

[0002] With the increasing sophistication and miniaturization of electronic devices, the significant demand for flexible power generation devices has been paid more and more attention. As a renewable energy source that is extremely easy to obtain, solar energy can meet the requirements of flexible power generation devices in terms of energy, greenness, portability, and easy availability. And realizing the full-spectrum utilization of solar energy is an efficient way to improve the performance of flexible solar power generation devices.

[0003] The main ways of full-spectrum solar power generation include solar thermal power generation, thermoelectric power generation, and multi-junction photovoltaic power generation, etc. Among them, solar thermal power generation and multi-junction photovoltaic power generation have problems such as a large system, a rigid structure, a complex structure, high costs, and limitations in low-light wide-angle, and cannot achieve flexibility. Although thermoelectric devices have a simple structure, small volume, light weight, and are easy to prepare flexible devices, their low conversion efficiency limits the scope of application. The coupling of thin-film photovoltaic cells and thermoelectric devices is the main measure to improve the solar energy utilization efficiency of flexible power generation devices. However, its current structure mainly uses a photovoltaic cell as the full-spectrum solar absorption layer, and at the same time as the hot end of the thermoelectric device. The short-wave solar photovoltaic cell is used by itself, and the remaining solar energy is converted into heat energy to generate electricity through the thermoelectric device. In this structure, the photovoltaic cell has to maintain a high temperature all the time in order to form a temperature difference at both ends of the thermoelectric device, but this will reduce the efficiency of the photovoltaic cell itself, thereby affecting the power generation efficiency of the overall device. Therefore, this structure has an obvious problem of unreasonable energy distribution. Summary of the Invention

[0004] In order to overcome the above-mentioned disadvantages of the prior art, the invention follows the principles of solar spectrum matching and cascade utilization, and proposes an integrated photovoltaic-thermoelectric flexible power generation device, a preparation method thereof, and an application thereof, realizing the efficient utilization of the solar spectrum and the maximum power generation of each of the photovoltaic and thermoelectric modules, and solving the technical problems of low conversion efficiency, insufficient power supply, difficulty in realizing full-spectrum solar utilization, and unstable output power under bending and folding conditions of the existing flexible power generation devices.

[0005] In order to achieve the above object, the invention adopts the following technical solutions to be realized:

[0006] The present invention discloses an integrated photovoltaic-thermoelectric flexible power generation device, which includes a flexible substrate, a flexible thermoelectric thin film, a flexible heat conduction layer, a flexible photonic crystal layer, a flexible heat insulation layer, a flexible solar cell, a filter thin film, and a flexible adiabatic spacer layer; the flexible substrate is placed at the bottom, the flexible thermoelectric thin film is laid directly above the flexible substrate, one end of the flexible thermoelectric thin film is the hot end, and the other end is the cold end; the flexible heat conduction layer is laid on one side of the hot end of the flexible thermoelectric thin film; the flexible photonic crystal layer is laid directly above the flexible heat conduction layer; the flexible heat insulation layer is laid on one side of the cold end of the flexible thermoelectric thin film; the flexible solar cell is placed directly above the flexible heat insulation layer; the filter thin film is placed directly above the flexible solar cell; the flexible adiabatic spacer layer is placed at the boundary between one side of the cold end and one side of the hot end of the flexible thermoelectric thin film.

[0007] Further, the flexible thermoelectric thin film includes a flexible semiconductor strip thin film and a conductive electrode; the flexible semiconductor strip thin film is placed above the flexible substrate; the flexible semiconductor strip thin film includes an n-type semiconductor strip thin film and a p-type semiconductor strip thin film, the n-type semiconductor strip thin film and the p-type semiconductor strip thin film are arranged in parallel in sequence, and are connected in series head to tail through the conductive electrode.

[0008] Further, the flexible substrate is made of polyvinylidene fluoride, polydimethylsiloxane or polyurethane; the flexible conductive electrode is made of flexible metal foil or wire.

[0009] Further, the flexible semiconductor strip thin film is made of an organic thermoelectric semiconductor strip thin film or an inorganic thermoelectric semiconductor strip thin film; the organic thermoelectric semiconductor strip thin film includes PEDOT:PSS, P3HT, PEI or PANI, and the inorganic thermoelectric semiconductor strip thin film includes Bi2Te3, PbTe, Cu2Se or Se2Te3.

[0010] Further, the flexible heat conduction layer is made of graphene, SiC-BN, rGO@CN / PI or GFS-rGO; the flexible photonic crystal layer is made of alternating high and low refractive index layers; the low refractive index layer is made of MgF2, LiF, polymethyl methacrylate or SiO 2制成 ; the high refractive index layer is made of TiO2, ZnS, WO3 or polystyrene; the flexible heat insulation layer is made of a YSZ / SiO2 nanofiber membrane, a ZrO2 / SiC-based nanofiber membrane or a Y2Zr2O7 flexible fiber membrane.

[0011] Further, the flexible solar cell is a perovskite solar cell, an organic thin-film solar cell or a dye-sensitized solar cell; the filter film is a Fabry-Perot type filter, a multi-cavity filter and an anti-reflection enhancement filter; the flexible adiabatic spacer layer is made of a YSZ / SiO2 nanofiber film, a ZrO2 / SiC-based nanofiber film or a Y2Zr2O7 flexible fiber film.

[0012] The present invention also discloses a preparation method of the above-mentioned integrated photovoltaic-thermoelectric flexible power generation device, including the following steps:

[0013] Step 1: Lay a flexible semiconductor strip film and a conductive electrode on a flexible substrate to obtain a flexible thermoelectric film; wherein the flexible semiconductor strip film includes an n-type semiconductor strip film and a p-type semiconductor strip film, and the n-type semiconductor strip film and the p-type semiconductor strip film are arranged in parallel in sequence and are connected in series at the head and tail through the conductive electrode.

[0014] Step 2: Use a first mask plate to lay a flexible adiabatic spacer layer at the middle dividing line on both the cold end side and the hot end side covering the flexible thermoelectric film, and then use a second mask plate to lay a flexible heat conductive layer on the hot end side of the flexible thermoelectric film; then use a third mask plate to lay a flexible heat insulation layer on the cold end side of the flexible thermoelectric film to obtain an intermediate processing device.

[0015] Step 3: Use a second mask plate to lay a flexible photonic crystal layer directly above the flexible heat conductive layer in the intermediate processing device; then use a third mask plate to lay a flexible solar cell directly above the flexible heat insulation layer, and lay a filter film directly above the flexible solar cell.

[0016] Further, in Step 1, the flexible semiconductor strip film and the conductive electrode are laid on the flexible substrate by means of spraying, inkjet printing, doctor blade coating, vacuum evaporation, screen printing or magnetron sputtering.

[0017] Further, in Step 2, the flexible adiabatic spacer layer is laid by means of doctor blade coating, inkjet printing, screen printing, spraying or slot die coating; the flexible heat conductive layer and the flexible heat insulation layer are laid by means of doctor blade coating, inkjet printing, screen printing, spraying or slot die coating; the filter film can be directly placed directly above the flexible solar cell or attached to the flexible solar cell by a polymer.

[0018] The present invention also discloses the application of the above-mentioned integrated photovoltaic-thermoelectric flexible power generation device, and the integrated photovoltaic-thermoelectric flexible power generation device is used as a power supply device for flexible electronic devices.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention provides an integrated photovoltaic-thermoelectric flexible power generation device. In this power generation device, a flexible thermoelectric thin film is placed at the bottom layer. Meanwhile, a flexible heat conducting layer and a flexible photonic crystal layer are sequentially laid on one side of the hot end of the flexible thermoelectric thin film. The flexible photonic crystal layer absorbs sunlight from multiple angles, enabling the flexible device to ensure the temperature of the hot end to the greatest extent when distorted and shaded (when the solar light intensity and incident angle change). On the other side of the cold end of the flexible thermoelectric thin film, a flexible heat insulation layer, a flexible solar cell, and a filter film are sequentially laid. The filter film reflects solar energy outside the utilization band of the flexible solar cell. At the same time, the flexible solar cell has low-light sensitivity, so that while ensuring the efficient power generation of the flexible solar cell, the temperature of the cold end is not affected. Finally, a flexible heat insulation spacer is placed at the boundary above the cold end and the hot end of the flexible thermoelectric thin film to reduce the mutual influence between the modules on both sides of the hot and cold ends, enabling the integrated photovoltaic-thermoelectric flexible power generation device of the present invention to operate efficiently and stably. The present invention combines photovoltaic power generation and thermoelectric power generation, which can not only ensure the normal photoelectric conversion of the photovoltaic module and the accumulation of a small amount of heat, but also ensure the maximum temperature difference power generation of the thermoelectric module. By integrating the two, the rational utilization of the full-spectrum solar irradiation is realized, and the overall output power of the power generation device is improved. At the same time, each component in the present invention is made of lightweight, flexible, and foldable materials, with the characteristics of light weight and high flexibility, and can be combined with irregular or curved objects such as portable electronic devices, large industrial roofs, and drones to meet their stable power requirements.

[0021] Furthermore, the flexible substrate is made of flexible materials such as polyvinylidene fluoride, polydimethylsiloxane, or polyurethane, which can ensure that the integrated power generation device in the present invention has characteristics such as high flexibility, easy reshaping, and foldability, facilitating deployment on the surfaces of various irregular or curved objects and providing power for them at any time and anywhere. The flexible heat conducting material is selected from graphene, SiC-BN, rGO@CN / PI, or GFS-rGO, which can ensure that the temperature of the hot end of the thermoelectric device is obtained from the full-spectrum photothermal conversion to the greatest extent. The photonic crystal layer is a flexible structure composed of alternating multi-layers of high and low refractive index materials such as SiO2, LiF, TiO2, WO3, polystyrene, or polymethyl methacrylate, which can ensure the stable photothermal conversion efficiency of the photonic crystal layer at various incident angles. The flexible heat insulation material is selected from YSZ / SiO2 nanofiber membranes, ZrO 2 / It is made of SiC-based nanofiber membrane or Y2Zr2O7 flexible fiber membrane, which can keep the cold end side of the thermoelectric device at the ambient temperature; the flexible solar cell is a thin-film solar cell based on flexibility and with good low-light performance such as perovskite solar cell, organic thin-film solar cell or dye-sensitized solar cell, and can achieve stable power output of the photovoltaic module under various bending and shielding conditions; the filter film selects flexible materials such as Fabry-Perot type filter, multi-cavity filter and anti-reflection enhancement filter that only transmit sunlight in the ultraviolet and visible light regions, which can reduce the heat accumulation of the flexible solar cell and ensure its high photoelectric conversion efficiency; the flexible adiabatic spacer material is made of YSZ / SiO2 nanofiber membrane, ZrO2 / SiC-based nanofiber membrane or Y2Zr2O7 flexible fiber membrane, which can ensure the efficient independent operation of the cold end and the hot end working modules.

[0022] The present invention also discloses a preparation method of the above integrated photovoltaic-thermoelectric power generation device. In this preparation method, the deposition of each functional layer adopts methods such as spraying, inkjet printing, blade coating, vacuum evaporation, screen printing or magnetron sputtering, which can ensure the minimum damage to the flexible substrate, make the obtained power generation device highly flexible and achieve efficient and stable operation at the same time; the present invention uses the first, second and third mask plates to control the accuracy and accuracy of the deposition of each functional layer, reduces the use of expensive high-precision instruments, and realizes low-cost preparation; the preparation method of an integrated photovoltaic-thermoelectric power generation device involved in the present invention has the characteristics of being simple and easy to implement and low cost, and can provide new ideas for the large-scale production of flexible photovoltaic-thermoelectric integrated devices. Brief Description of the Drawings

[0023] Figure 1 It is a left view of an integrated photovoltaic-thermoelectric flexible power generation device of the present invention;

[0024] Figure 2 It is a schematic diagram of the appearance of the flexible thermoelectric thin film;

[0025] Figure 3 It is a schematic diagram of using the first mask plate;

[0026] Figure 4 It is a schematic diagram of using the second mask plate;

[0027] Figure 5 It is a schematic diagram of using the third mask plate;

[0028] Wherein: 1 - flexible substrate; 2 - flexible thermoelectric thin film; 3 - flexible heat conduction layer; 4 - flexible photonic crystal layer; 5 - flexible heat insulation layer; 6 - flexible solar cell; 7 - light filtering thin film; 8 - flexible adiabatic spacer layer; 9 - flexible semiconductor strip thin film; 91 - n-type thermoelectric semiconductor strip thin film; 92 - p-type thermoelectric semiconductor strip thin film; 10 - conductive electrode; 11 - first mask plate; 12 - second mask plate; 13 - third mask plate. Detailed implementation manners

[0029] To enable those skilled in the art to understand the features and effects of the present invention, the following provides a general description and definition of the terms and phrases mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used herein shall have the ordinary meaning understood by those skilled in the art with respect to the present invention. In case of conflict, the definitions in this specification shall prevail.

[0030] The theories or mechanisms described and disclosed herein, whether correct or incorrect, shall not limit the scope of the present invention in any way, that is, the content of the present invention can be implemented without being limited by any specific theory or mechanism.

[0031] In this article, all features defined in the form of numerical ranges or percentage ranges, such as numerical values, quantities, contents, and concentrations, are only for the sake of brevity and convenience. Accordingly, the description of numerical ranges or percentage ranges should be regarded as having covered and specifically disclosed all possible sub-ranges and individual numerical values within the range (including integers and fractions).

[0032] In this article, unless otherwise specified, "comprising", "including", "containing", "having" or similar terms cover the meanings of "consisting of" and "mainly consisting of". For example, "A comprises a" covers the meanings of "A comprises a and others" and "A only comprises a".

[0033] In this article, for the sake of concise description, all possible combinations of the technical features in each embodiment or example are not described. Therefore, as long as there is no contradiction in the combination of these technical features, the technical features in each embodiment or example can be combined arbitrarily, and all possible combinations should be considered as falling within the scope described in this specification.

[0034] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of this application.

[0035] Conventional instruments and equipment in the art are used in the following embodiments. For the experimental methods without specific conditions noted in the following embodiments, they are generally carried out under conventional conditions or according to the conditions recommended by the manufacturer. Various raw materials are used in the following embodiments. Unless otherwise specified, commercially available products are used, and their specifications are conventional specifications in the art. In the specification of the present invention and the following embodiments, unless otherwise specified, "%" represents weight percentage, "parts" represents weight parts, and the ratio represents weight ratio.

[0036] As Figure 1 shown, an integrated photovoltaic-thermoelectric flexible power generation device, characterized in that it includes a flexible substrate 1, a flexible thermoelectric thin film 2, a flexible heat conducting layer 3, a flexible photonic crystal layer 4, a flexible heat insulation layer 5, a flexible solar cell 6, a filter thin film 7, and a flexible adiabatic spacer layer 8; the flexible substrate 1 is placed at the bottom, the flexible thermoelectric thin film 2 is laid directly above the flexible substrate 1, one end is the hot end and the other end is the cold end; the flexible heat conducting layer 3 is laid on one side of the hot end of the flexible thermoelectric thin film 2; the flexible photonic crystal layer 4 is laid directly above the flexible heat conducting layer 3; the flexible heat insulation layer 5 is laid on one side of the cold end of the flexible thermoelectric thin film 2; the flexible solar cell 6 is placed directly above the flexible heat insulation layer 5; the filter thin film 7 is placed directly above the flexible solar cell 6; the flexible adiabatic spacer layer 8 is placed at the boundary between one side of the cold end and one side of the hot end of the flexible thermoelectric thin film 2.

[0037] Example 1

[0038] A preparation method of an integrated photovoltaic-thermoelectric flexible power generation device includes the following steps:

[0039] Step 1: Deposit an n-type thermoelectric semiconductor strip thin film 91, a p-type thermoelectric semiconductor strip thin film 92, and a conductive electrode 10 on the flexible substrate 1 by screen printing. Among them, the material of the flexible substrate 1 is PDMS, the material of the n-type thermoelectric semiconductor strip thin film 91 is Bi2Te3, the material of the p-type thermoelectric semiconductor strip thin film 92 is Se2Te3, and the material of the conductive electrode 10 is silver foil; As Figure 2 shown, the n-type semiconductor strip thin film 91 and the p-type semiconductor strip thin film 92 are arranged in parallel in sequence and are connected in series head to tail through the conductive electrode 10 to form a flexible semiconductor strip thin film 9;

[0040] Step 2: As Figure 3 shown, use the first mask 11 to deposit and lay the flexible adiabatic spacer layer 8 by magnetron sputtering at the middle boundary line covering one side of the cold end and one side of the hot end of the flexible thermoelectric thin film 2. The material of the flexible adiabatic spacer layer 8 is a YSZ / SiO2 nanofiber membrane; As Figure 4As shown in the figure, a second mask plate 12 is then used, and a flexible heat conduction layer 3 is laid on one side of the hot end of the flexible thermoelectric thin film 2 by means of blade coating. The material of the flexible heat conduction layer 3 is graphene; as Figure 5 shown in the figure, a third mask plate 13 is then used, and a flexible heat insulation layer 5 is laid on one side of the cold end of the flexible thermoelectric thin film 2 by means of blade coating. The material of the flexible heat insulation layer 5 is YSZ / SiO2 nanofiber film, and an intermediate processor device is obtained;

[0041] Step 3: A second mask plate 12 is used, and a flexible photonic crystal layer 4 is laid on the flexible heat conduction layer 3 in the intermediate processor device by means of magnetron sputtering. The material of the flexible photonic crystal layer 4 is WO3 / LiF; subsequently, a third mask plate 13 is used to lay a flexible solar cell 6 above the flexible heat insulation layer 5. The flexible solar cell 6 is a perovskite solar cell, which from bottom to top is a flexible substrate polyethylene terephthalate (PET), a transparent conductive material (indium tin oxide (ITO)) obtained by magnetron sputtering, a hole transport layer NiOx obtained by atomic layer deposition, a perovskite absorption layer FAPbI3 obtained by spin coating, an electron transport layer SnO2 obtained by sputtering, and a transparent electrode silver obtained by vacuum evaporation; a filter film 7 is laid above the flexible solar cell 6. The filter film 7 is a multi-cavity filter to ensure the absorption of sunlight in the ultraviolet and visible light regions by the flexible solar cell, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0042] Example 2

[0043] Different from Example 1, the flexible solar cell 6 is an organic thin film solar cell, and the remaining components and preparation methods are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0044] The organic thin film solar cell involved in this example includes a flexible transparent substrate, a transparent conductive oxide, an electron blocking layer, an active absorption layer, and a cathode. The organic thin film solar cell from bottom to top is a flexible transparent substrate polyethylene naphthalate (PEN), a transparent conductive oxide ITO obtained by sputtering, an electron blocking layer PEDOT:PSS obtained by spin coating, an active absorption layer P3HT:CNT obtained by spin coating, and a cathode aluminum obtained by vacuum evaporation.

[0045] Example 3

[0046] Different from Example 1: The flexible solar cell is a dye-sensitized solar cell, and the remaining components and preparation methods are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0047] The dye-sensitized solar cell involved in this embodiment includes six parts: a flexible substrate, a transparent anode, a mesoporous oxide layer, dye molecules, an electrolyte, and a cathode. The dye-sensitized solar cell, from bottom to top, is successively a flexible transparent substrate polyethylene naphthalate (PEN), a transparent anode ITO, a mesoporous oxide layer TiO2 obtained by screen printing and dye molecules N3, a screen-printed electrolyte gel polymer phthaloyl chitosan, and a cathode obtained by spraying, which is platinum coated with a catalyst.

[0048] Example 4

[0049] Different from Example 1, the material of the flexible substrate 1 is polyvinylidene fluoride (PVDF), the material of the n-type semiconductor strip film 91 is PEI, the material of the p-type semiconductor strip film 92 is PEDOT:PSS, and the material of the conductive electrode 10 is copper foil. The remaining components and the preparation method are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0050] Example 5

[0051] Different from Example 1, the material of the flexible heat-conducting layer 3 is GFS-rG, the material of the flexible heat-insulating layer 5 is ZrO2 / SiC-based nanofiber membrane, the material of the n-type thermoelectric semiconductor strip film 91 is PbTe, and the material of the p-type thermoelectric semiconductor strip film 92 is Cu2Se. The remaining components and the preparation method are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0052] Example 6

[0053] Different from Example 1, the material of the flexible heat-conducting layer 3 is GFS-rGO, and the material of the flexible photonic crystal layer 4 is OPTCM. The remaining components and the preparation method are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0054] Example 7

[0055] Different from Example 1, the material of the flexible heat-conducting layer 3 is rGO@CN / PI, and the material of the flexible adiabatic spacer layer 8 is ZrO2 / SiC-based nanofiber membrane. The remaining components and the preparation method are the same as those in Example 1, and an integrated photovoltaic-thermoelectric flexible power generation device is obtained.

[0056] Example 8

[0057] A preparation method of an integrated photovoltaic-thermoelectric flexible power generation device includes the following steps:

[0058] Step 1: Deposit the n-type thermoelectric semiconductor strip thin film 91, p-type thermoelectric semiconductor strip thin film 92, and conductive electrode 10 on the flexible substrate 1 by vacuum evaporation. Among them, the material of the flexible substrate 1 is polyurethane (PU), the material of the n-type thermoelectric semiconductor strip thin film 91 is P3HT, the material of the p-type thermoelectric semiconductor strip thin film 92 is PANI, and the material of the conductive electrode 10 is a wire. The n-type semiconductor strip thin film 91 and the p-type semiconductor strip thin film 92 are arranged in parallel in sequence and are connected in series head to tail through the conductive electrode 10 to form the flexible semiconductor strip thin film 9.

[0059] Step 2: Use the first mask 11 to deposit and lay the flexible adiabatic spacer layer 8 by slot die coating at the middle dividing line on both the cold end side and the hot end side of the flexible thermoelectric thin film 2. The material of the flexible adiabatic spacer layer 8 is the Y2Zr2O7 flexible fiber film. Then use the second mask 12 to lay the flexible heat conductive layer 3 by spraying on the hot end side of the flexible thermoelectric thin film 2. The material of the flexible heat conductive layer 3 is SiC-BN. Then use the third mask 13 to lay the flexible heat insulation layer 5 by blade coating on the cold end side of the flexible thermoelectric thin film 2. The material of the flexible heat insulation layer 5 is the Y2Zr2O7 flexible fiber film to obtain the intermediate processing device.

[0060] Step 3: Use the second mask 12 to lay the flexible photonic crystal layer 4 by magnetron sputtering directly above the flexible heat conductive layer 3 in the intermediate processing device. The material of the flexible photonic crystal layer 4 is WO3 / LiF. Subsequently, use the third mask 13 to lay the flexible solar cell 6 directly above the flexible heat insulation layer 5. The flexible solar cell 6 is a perovskite solar cell, which is, from bottom to top, a flexible substrate polyethylene terephthalate (PET), a transparent conductive material (indium tin oxide (ITO)) obtained by magnetron sputtering, a hole transport layer NiOx obtained by atomic layer deposition, a perovskite absorption layer FAPbI3 obtained by spin coating, an electron transport layer SnO2 obtained by sputtering, and a transparent electrode silver obtained by vacuum evaporation. A filter film 7, which is a multi-cavity filter, is laid directly above the flexible solar cell 6 to ensure the absorption of sunlight in the ultraviolet and visible light regions by the flexible solar cell, thereby obtaining an integrated photovoltaic-thermoelectric flexible power generation device.

[0061] The above content is only to illustrate the technical idea of the present invention and cannot be used to limit the protection scope of the present invention. Any modification made on the basis of the technical solution according to the technical idea proposed by the present invention falls within the protection scope of the claims of the present invention.

Claims

1. An integrated photovoltaic-thermoelectric flexible power generation device, characterized in that, It includes a flexible substrate (1), a flexible thermoelectric thin film (2), a flexible heat-conducting layer (3), a flexible photonic crystal layer (4), a flexible heat-insulating layer (5), a flexible solar cell (6), a light-filtering thin film (7), and a flexible adiabatic spacer layer (8); the flexible substrate (1) is placed at the bottom, the flexible thermoelectric thin film (2) is laid directly above the flexible substrate (1), one end of the flexible thermoelectric thin film (2) is the hot end, and the other end is the cold end; the flexible heat-conducting layer (3) is laid on one side of the hot end of the flexible thermoelectric thin film (2); the flexible photonic crystal layer (4) is laid directly above the flexible heat-conducting layer (3); the flexible heat-insulating layer (5) is laid on one side of the cold end of the flexible thermoelectric thin film (2); the flexible solar cell (6) is placed directly above the flexible heat-insulating layer (5); the light-filtering thin film (7) is placed directly above the flexible solar cell (6); the flexible adiabatic spacer layer (8) is placed at the boundary between one side of the cold end and one side of the hot end of the flexible thermoelectric thin film (2); the flexible heat-conducting layer (3) is made of graphene, SiC-BN, rGO@CN / PI, or GFS-rGO; the flexible photonic crystal layer (4) is composed of alternating high- and low-refractive-index layers, and the low-refractive-index layer is made of MgF2, LiF, polymethyl methacrylate, or SiO2; the high-refractive-index layer is made of TiO2, ZnS, WO3, or polystyrene; the flexible heat-insulating layer (5) is made of a YSZ / SiO2 nanofiber membrane, a ZrO2 / SiC-based nanofiber membrane, or a Y2Zr2O7 flexible fiber membrane.

2. The integrated photovoltaic-thermoelectric flexible power generation device according to claim 1, characterized in that, The flexible thermoelectric thin film (2) includes a flexible semiconductor strip-shaped thin film (9) and a conductive electrode (10); the flexible semiconductor strip-shaped thin film (9) is placed above the flexible substrate (1); the flexible semiconductor strip-shaped thin film (9) includes an n-type semiconductor strip-shaped thin film (91) and a p-type semiconductor strip-shaped thin film (92), the n-type semiconductor strip-shaped thin film (91) and the p-type semiconductor strip-shaped thin film (92) are arranged in parallel in sequence, and are connected in series at the head and tail through the conductive electrode (10).

3. An integrated photovoltaic-thermoelectric flexible power generation device according to claim 2, characterized in that, The flexible substrate (1) is made of polyvinylidene fluoride, polydimethylsiloxane, or polyurethane; the conductive electrode (10) is made of flexible metal foil or wire.

4. An integrated photovoltaic-thermoelectric flexible power generation device according to claim 2, characterized in that, The flexible semiconductor strip-shaped thin film (9) is made of an organic thermoelectric semiconductor strip-shaped thin film or an inorganic thermoelectric semiconductor strip-shaped thin film; the organic thermoelectric semiconductor strip-shaped thin film includes PEDOT:PSS, P3HT, PEI, or PANI, and the inorganic thermoelectric semiconductor strip-shaped thin film includes Bi2Te3, PbTe, Cu2Se, or Se2Te3.

5. An integrated photovoltaic-thermoelectric flexible power generation device according to claim 1, characterized in that, The flexible solar cell (6) is a perovskite solar cell, an organic thin-film solar cell, or a dye-sensitized solar cell; the light-filtering thin film (7) is a Fabry-Perot type light filter, a multi-cavity light filter, and an anti-reflection and anti-reflection light filter; the flexible adiabatic spacer layer (8) is made of a YSZ / SiO2 nanofiber membrane, a ZrO2 / SiC-based nanofiber membrane, or a Y2Zr2O7 flexible fiber membrane.

6. A method for preparing an integrated photovoltaic-thermoelectric flexible power generation device according to any one of claims 1 to 5, characterized in that, It includes the following steps: Step 1: Lay a flexible semiconductor strip film (9) and a conductive electrode (10) on a flexible substrate (1) to obtain a flexible thermoelectric film (2); the flexible semiconductor strip film (9) includes an n-type semiconductor strip film (91) and a p-type semiconductor strip film (92), the n-type semiconductor strip film (91) and the p-type semiconductor strip film (92) are arranged in parallel in sequence, and are connected in series at the head and tail through the conductive electrode (10). Step 2: Use a first mask plate (11) to lay a flexible adiabatic spacer layer (8) at the middle dividing line on both the cold end side and the hot end side covering the flexible thermoelectric film (2), and then use a second mask plate (12) to lay a flexible heat conducting layer (3) on the hot end side of the flexible thermoelectric film (2); then use a third mask plate (13) to lay a flexible heat insulating layer (5) on the cold end side of the flexible thermoelectric film (2) to obtain an intermediate processing device. Step 3: Use the second mask plate (12) to lay a flexible photonic crystal layer (4) directly above the flexible heat conducting layer (3) in the intermediate processing device; then use the third mask plate (13) to lay a flexible solar cell (6) directly above the flexible heat insulating layer (5), and lay a filter film (7) directly above the flexible solar cell (6).

7. The preparation method of an integrated photovoltaic-thermoelectric flexible power generation device according to claim 6, characterized in that, In Step 1, the flexible semiconductor strip film (9) and the conductive electrode (10) are laid on the flexible substrate (1) by means of spraying, inkjet printing, doctor blade coating, vacuum evaporation, screen printing or magnetron sputtering.

8. The preparation method of an integrated photovoltaic-thermoelectric flexible power generation device according to claim 6, characterized in that, In Step 2, the flexible adiabatic spacer layer (8) is laid by means of doctor blade coating, inkjet printing, screen printing, spraying or slot die coating; the flexible heat conducting layer (3) and the flexible heat insulating layer (5) are laid by means of doctor blade coating, inkjet printing, screen printing, spraying or slot die coating; the filter film (7) can be directly placed directly above the flexible solar cell (6) or attached to the flexible solar cell (6) by a polymer.

9. Use of an integrated photovoltaic-thermoelectric flexible power generation device according to any one of claims 1 to 5, characterized in that, The integrated photovoltaic-thermoelectric flexible power generation device serves as a power supply device for flexible electronic devices.

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