A digital speaker driving system

Abstract

The present invention relates to a digital speaker drive system, characterized by comprising a first connection terminal, a second connection terminal, a power supply terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field-effect transistor switch drive circuit, a second field-effect transistor switch drive circuit, a first N-channel field-effect transistor, a second N-channel field-effect transistor, a first diode, a second diode, and the like. The speaker is provided with a forward winding and a reverse winding, respectively. This invention can reduce ΔT without changing the existing structure and materials of the speaker, and can also compensate for the defect of existing power switching tubes in reproducing small signals during use. This can significantly improve the sound quality of electrodynamic digital speakers. Furthermore, the overall circuit structure of the digital speaker drive system has the advantages of simplicity, reliability, and good stability.

Description

Technical Field

[0001] The present invention relates to the field of audio equipment, in particular to a digital loudspeaker driving system. Background Art

[0002] Existing electrodynamic speakers can be simply understood as a forced vibrating mass-spring system with a certain degree of damping. When the pulse signal driving the speaker stops at time T, and the speaker stops at time T + ∆T, experiments have shown that an excessively large ∆T significantly impacts the sound quality of electrodynamic speakers. Once the structure and materials of an electrodynamic speaker system are determined, ∆T is essentially fixed. Changing ∆T changes every parameter of the speaker, and consequently, the sound quality. Furthermore, the method for reproducing small signals, or narrow pulses, is affected by the performance and specifications of the power switching transistors themselves. The maximum switching frequency is limited by their inherent characteristics, effectively limiting the ability to reproduce narrow pulses. Consequently, significant improvements in the sound quality of existing electrodynamic speakers are difficult to achieve. Summary of the Invention

[0003] The object of the present invention is to address the above-mentioned problems and deficiencies by providing a digital speaker drive system. This digital speaker drive system can reduce ∆T without changing the existing structure and materials of the speaker, and can compensate for the defect of existing power switching tubes in reproducing small signals during use. It can greatly improve the sound quality of electrodynamic digital speakers. This solution not only gives the digital speaker drive system strong applicability, but also has the advantages of simplicity, reliability, and good stability in the overall circuit structure of this solution.

[0004] The present invention proposes seven technical solutions to achieve the above technical objectives, which are:

[0005] The first type: a digital speaker driving system, characterized by comprising a first connection end, a second connection end, a power supply terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first N-channel field effect transistor, a second N-channel field effect transistor, a first diode, a second diode, a first resistor, a second resistor, a first capacitor, a second capacitor, and a switch circuit, wherein the speaker is provided with a forward winding and a reverse winding respectively, and the forward winding One end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to the power terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to the drain of the first N-channel field effect transistor, the other end of the third ferrite and iron-rich conductor co-fired body is connected to the drain of the second N-channel field effect transistor, the source of the first N-channel field effect transistor is connected to the second N-channel field effect transistor. The sources of the first and second field effect transistors are connected to the ground terminal, one end of the first resistor is connected to the other end of the first ferrite and iron-rich conductor co-fired body, one end of the second resistor is connected to the other end of the first resistor, and the other end of the second resistor is connected to the ground terminal, the first capacitor is connected in parallel with the first resistor, and the second capacitor is connected in parallel with the second resistor, an input end of the first diode is connected between the second ferrite and iron-rich conductor co-fired body and the first N-channel field effect transistor, an output end of the first diode is connected to one end of the switching circuit, and the other end of the switching circuit is connected between the first resistor and the second resistor, an input end of the second diode is connected between the third ferrite and iron-rich conductor co-fired body and the second N-channel field effect transistor, and an output end of the second diode is connected between the first diode and the switching circuit, an input end of the first field effect transistor switch driving circuit is connected to the first connection end, an output end of the first field effect transistor switch driving circuit is connected to the gate of the first N-channel field effect transistor, an input end of the second field effect transistor switch driving circuit is connected to the second connection end, and an output end of the second field effect transistor switch driving circuit is connected to the gate of the second N-channel field effect transistor.

[0006] The second type: a digital speaker driving system, characterized in that it includes a first connection end, a second connection end, a power terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first N-channel field effect transistor, a second N-channel field effect transistor, a first diode, a second diode, a first resistor, a second resistor, a first capacitor, a second capacitor, and a switching circuit, wherein the speaker is respectively provided with a forward winding and a reverse winding, and the forward winding One end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to the ground terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to the source of the first N-channel field effect transistor, the other end of the third ferrite and iron-rich conductor co-fired body is connected to the source of the second N-channel field effect transistor, and the drain of the first N-channel field effect transistor is connected to the drain of the first N-channel field effect transistor. The gate of the first N-channel field effect transistor and the drain of the second N-channel field effect transistor are both connected to the power terminal, one end of the first resistor is connected to the power terminal, one end of the second resistor is connected to the other end of the first resistor, and the other end of the second resistor is connected to the ground terminal. The first capacitor is connected in parallel with the first resistor, and the second capacitor is connected in parallel with the second resistor. The output end of the first diode is connected between the third ferrite and iron-rich conductor co-fired body and the second N-channel field effect transistor. The input end of the first diode is connected to one end of the switching circuit, and the other end of the switching circuit is connected between the first resistor and the second resistor. The output end of the second diode is connected between the second ferrite and iron-rich conductor co-fired body and the first N-channel field effect transistor. The input end of the second diode is connected between the first diode and the switching circuit. The input end of the first field effect transistor switch driving circuit is connected to the first connection end, the output end of the first field effect transistor switch driving circuit is connected to the gate of the first N-channel field effect transistor, the input end of the second field effect transistor switch driving circuit is connected to the second connection end, and the output end of the second field effect transistor switch driving circuit is connected to the gate of the second N-channel field effect transistor.

[0007] The third type: a digital speaker driving system, characterized by comprising a first connection end, a second connection end, a power supply terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first inverter, a second inverter, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first N-channel field effect transistor, a second N-channel field effect transistor, a third N-channel field effect transistor, a fourth N-channel field effect transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first A capacitor, a second capacitor, a first switching circuit, and a second switching circuit, wherein a forward winding and a reverse winding are respectively provided on the speaker, one end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to a power terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to one end of a third resistor, the other end of the third resistor is connected to the input end of a seventh diode, the output end of the seventh diode is connected to one end of the first switching circuit, and the other end of the first switching circuit is connected to the input end of a seventh diode. One end of the first capacitor is connected to the power supply terminal, one end of the second capacitor is connected to the other end of the first capacitor, the other end of the second capacitor is connected to the ground terminal, one end of the first resistor is connected to the power supply terminal, one end of the second resistor is connected to the other end of the first resistor, and one end of the second resistor is also connected to one end of the second capacitor, and the other end of the second resistor is connected to the ground terminal. The drain of the first N-channel field effect transistor is connected to a power supply terminal, the drain of the third N-channel field effect transistor is connected to the source of the first N-channel field effect transistor, and the drain of the third N-channel field effect transistor is also connected to the other end of the co-fired body of the second ferrite and the iron-rich conductor. The source of the third N-channel field effect transistor is connected to a ground terminal. The input end of the first diode is connected to the source of the first N-channel field effect transistor, the output end of the first diode is connected to the drain of the first N-channel field effect transistor, the input end of the third diode is connected to the source of the third N-channel field effect transistor, and the output end of the third diode is connected to the drain of the third N-channel field effect transistor.The input end of the fifth diode is connected to the source of the first N-channel field effect transistor, the output end of the fifth diode is connected to the other end of the first capacitor, the input ends of the first inverter and the first field effect transistor switch drive circuit are both connected to the first connection end, the output end of the first inverter is connected to the gate of the first N-channel field effect transistor, the output end of the first field effect transistor switch drive circuit is connected to the gate of the third N-channel field effect transistor, the drain of the second N-channel field effect transistor is connected to the power supply terminal, the drain of the fourth N-channel field effect transistor is connected to the source of the second N-channel field effect transistor, and the drain of the fourth N-channel field effect transistor is also connected to the other end of the third ferrite and iron-rich conductor co-fired body, and the source of the fourth N-channel field effect transistor is connected to the ground terminal The input end of the second diode is connected to the source of the second N-channel field effect transistor, the output end of the second diode is connected to the drain of the second N-channel field effect transistor, the input end of the fourth diode is connected to the source of the fourth N-channel field effect transistor, the output end of the fourth diode is connected to the drain of the fourth N-channel field effect transistor, the input end of the sixth diode is connected to the source of the second N-channel field effect transistor, and the output end of the sixth diode is connected to the other end of the first resistor. The input ends of the second inverter and the second field effect transistor switch drive circuit are both connected to the second connection end, the output end of the second inverter is connected to the gate of the second N-channel field effect transistor, and the output end of the second field effect transistor switch drive circuit is connected to the gate of the fourth N-channel field effect transistor.

[0008] The fourth type: a digital speaker driving system, characterized in that it includes a first connection end, a second connection end, a power supply terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first inverter, a second inverter, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first N-channel field effect transistor, a second N-channel field effect transistor, a third N-channel field effect transistor, a fourth N-channel field effect transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first resistor, a second resistor, a third resistor, a fourth resistor, A fifth resistor, a sixth resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first switching circuit, and a second switching circuit, wherein a forward winding and a reverse winding are respectively provided on the speaker, one end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to the power terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to one end of the fifth resistor, the other end of the fifth resistor is connected to the input end of the seventh diode, and the output end of the seventh diode is connected to One end of the first switch circuit is connected, the other end of the first switch circuit is connected to the ground terminal, the other end of the third ferrite and iron-rich conductor co-fired body is connected to one end of the sixth resistor, the other end of the sixth resistor is connected to the input end of the eighth diode, the output end of the eighth diode is connected to one end of the second switch circuit, the other end of the second switch circuit is connected to the ground terminal, one end of the first capacitor is connected to the power terminal, one end of the third capacitor is connected to the other end of the first capacitor, the other end of the third capacitor is connected to the ground terminal, the first resistor is connected to the first capacitor in parallel, the third resistor is connected to the third capacitor in parallel, one end of the second resistor is connected to the power terminal, and the fourth resistor One end of the first N-channel field effect transistor is connected to the other end of the second resistor, the other end of the fourth resistor is connected to the ground terminal, the second capacitor is connected in parallel with the second resistor, the fourth capacitor is connected in parallel with the fourth resistor, the drain of the first N-channel field effect transistor is connected to the power supply terminal, the drain of the third N-channel field effect transistor is connected to the source of the first N-channel field effect transistor, and the drain of the third N-channel field effect transistor is also connected to the other end of the second ferrite and iron-rich conductor co-fired body, the source of the third N-channel field effect transistor is connected to the ground terminal, the input end of the first diode is connected to the source of the first N-channel field effect transistor, and the output end of the first diode is connected to the drain of the first N-channel field effect transistor.The input end of the third diode is connected to the source of the third N-channel field effect transistor, the output end of the third diode is connected to the drain of the third N-channel field effect transistor, the input end of the fifth diode is connected to the source of the first N-channel field effect transistor, the output end of the fifth diode is connected to the other end of the first capacitor, the input ends of the first inverter and the first field effect transistor switch drive circuit are both connected to the first connection end, the output end of the first inverter is connected to the gate of the first N-channel field effect transistor, the output end of the first field effect transistor switch drive circuit is connected to the gate of the third N-channel field effect transistor, the drain of the second N-channel field effect transistor is connected to the power supply terminal, the drain of the fourth N-channel field effect transistor is connected to the source of the second N-channel field effect transistor, and the drain of the fourth N-channel field effect transistor is also connected to the third ferrite and iron-rich conductor co-fired body. The other end of the second resistor is connected to the second terminal, the source of the fourth N-channel field effect transistor is connected to the ground terminal, the input end of the second diode is connected to the source of the second N-channel field effect transistor, the output end of the second diode is connected to the drain of the second N-channel field effect transistor, the input end of the fourth diode is connected to the source of the fourth N-channel field effect transistor, the output end of the fourth diode is connected to the drain of the fourth N-channel field effect transistor, the input end of the sixth diode is connected to the source of the second N-channel field effect transistor, the output end of the sixth diode is connected to the other end of the second resistor, the input ends of the second inverter and the second field effect transistor switch drive circuit are both connected to the second connection end, the output end of the second inverter is connected to the gate of the second N-channel field effect transistor, and the output end of the second field effect transistor switch drive circuit is connected to the gate of the fourth N-channel field effect transistor.

[0009] The fifth type: a digital speaker driving system, characterized in that it includes a first connection end, a second connection end, a power terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first inverter, a second inverter, a first N-channel field effect transistor, a second N-channel field effect transistor, a third N-channel field effect transistor, a fourth N-channel field effect transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first resistor, a second resistor, a third resistor, a fourth resistor, A first capacitor, a second capacitor, a first switching circuit, and a second switching circuit, wherein a forward winding and a reverse winding are respectively provided on the speaker, one end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to the ground terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to one end of the third resistor, the other end of the third resistor is connected to the output end of the seventh diode, the input end of the seventh diode is connected to one end of the first switching circuit, and the first switching circuit The other end of the third ferrite and iron-rich conductor co-fired body is connected to one end of a fourth resistor, the other end of the fourth resistor is connected to the output end of an eighth diode, the input end of the eighth diode is connected to one end of a second switch circuit, the other end of the second switch circuit is connected to the power terminal, one end of the first capacitor is connected to the power terminal, one end of the second capacitor is connected to the other end of the first capacitor, the other end of the second capacitor is connected to the ground terminal, one end of the first resistor is connected to the power terminal, one end of the second resistor is connected to the other end of the first resistor, and one end of the second resistor is also connected to one end of the second capacitor, and the other end of the second resistor is connected to the ground terminal. The drain of the first N-channel field effect transistor is connected to a power supply terminal, the drain of the third N-channel field effect transistor is connected to the source of the first N-channel field effect transistor, and the drain of the third N-channel field effect transistor is also connected to the other end of the co-fired body of the second ferrite and the iron-rich conductor. The source of the third N-channel field effect transistor is connected to a ground terminal. The input end of the first diode is connected to the source of the first N-channel field effect transistor, the output end of the first diode is connected to the drain of the first N-channel field effect transistor, the input end of the third diode is connected to the source of the third N-channel field effect transistor, and the output end of the third diode is connected to the drain of the third N-channel field effect transistor.The input end of the fifth diode is connected to the source of the first N-channel field effect transistor, the output end of the fifth diode is connected to the other end of the first capacitor, the input ends of the first field effect transistor switch driving circuit and the first inverter are both connected to the first connection end, the output end of the first field effect transistor switch driving circuit is connected to the gate of the first N-channel field effect transistor, the output end of the first inverter is connected to the gate of the third N-channel field effect transistor, the drain of the second N-channel field effect transistor is connected to the power supply terminal, the drain of the fourth N-channel field effect transistor is connected to the source of the second N-channel field effect transistor, and the drain of the fourth N-channel field effect transistor is also connected to the other end of the third ferrite and iron-rich conductor co-fired body, and the source of the fourth N-channel field effect transistor is connected to the ground terminal The input end of the second diode is connected to the source of the second N-channel field effect transistor, the output end of the second diode is connected to the drain of the second N-channel field effect transistor, the input end of the fourth diode is connected to the source of the fourth N-channel field effect transistor, the output end of the fourth diode is connected to the drain of the fourth N-channel field effect transistor, the input end of the sixth diode is connected to the source of the second N-channel field effect transistor, the output end of the sixth diode is connected to the other end of the first resistor, the input ends of the second field effect transistor switch drive circuit and the second inverter are both connected to the second connection end, the output end of the second field effect transistor switch drive circuit is connected to the gate of the second N-channel field effect transistor, and the output end of the second inverter is connected to the gate of the fourth N-channel field effect transistor.

[0010] The sixth type: a digital speaker driving system, characterized in that it includes a first connection end, a second connection end, a power terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field effect tube switch driving circuit, a second field effect tube switch driving circuit, a first inverter, a second inverter, a first N-channel field effect transistor, a second N-channel field effect transistor, a third N-channel field effect transistor, a fourth N-channel field effect transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first resistor, a second resistor, a third resistor, a fourth resistor, A fifth resistor, a sixth resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first switching circuit, and a second switching circuit, wherein a forward winding and a reverse winding are respectively provided on the speaker, one end of the forward winding and the reverse winding are both connected to one end of the first ferrite and iron-rich conductor co-fired body, the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body, the other end of the first ferrite and iron-rich conductor co-fired body is connected to the ground terminal, the other end of the second ferrite and iron-rich conductor co-fired body is connected to one end of the fifth resistor, the other end of the fifth resistor is connected to the output end of the seventh diode, and the input end of the seventh diode is connected to One end of the first switch circuit is connected, the other end of the first switch circuit is connected to the power terminal, the other end of the third ferrite and iron-rich conductor co-fired body is connected to one end of the sixth resistor, the other end of the sixth resistor is connected to the output end of the eighth diode, the input end of the eighth diode is connected to one end of the second switch circuit, the other end of the second switch circuit is connected to the power terminal, one end of the first capacitor is connected to the power terminal, one end of the third capacitor is connected to the other end of the first capacitor, the other end of the third capacitor is connected to the ground terminal, the first resistor is connected in parallel with the first capacitor, the third resistor is connected in parallel with the third capacitor, one end of the second resistor is connected to the power terminal, and the fourth resistor One end of the first N-channel field effect transistor is connected to the other end of the second resistor, the other end of the fourth resistor is connected to the ground terminal, the second capacitor is connected in parallel with the second resistor, the fourth capacitor is connected in parallel with the fourth resistor, the drain of the first N-channel field effect transistor is connected to the power supply terminal, the drain of the third N-channel field effect transistor is connected to the source of the first N-channel field effect transistor, and the drain of the third N-channel field effect transistor is also connected to the other end of the second ferrite and iron-rich conductor co-fired body, the source of the third N-channel field effect transistor is connected to the ground terminal, the input end of the first diode is connected to the source of the first N-channel field effect transistor, and the output end of the first diode is connected to the drain of the first N-channel field effect transistor.The input end of the third diode is connected to the source of the third N-channel field effect transistor, the output end of the third diode is connected to the drain of the third N-channel field effect transistor, the input end of the fifth diode is connected to the source of the first N-channel field effect transistor, the output end of the fifth diode is connected to the other end of the first capacitor, the input ends of the first field effect transistor switch drive circuit and the first inverter are both connected to the first connection end, the output end of the first field effect transistor switch drive circuit is connected to the gate of the first N-channel field effect transistor, the output end of the first inverter is connected to the gate of the third N-channel field effect transistor, the drain of the second N-channel field effect transistor is connected to the power supply terminal, the drain of the fourth N-channel field effect transistor is connected to the source of the second N-channel field effect transistor, and the drain of the fourth N-channel field effect transistor is also connected to the third ferrite and iron-rich conductor co-fired body. The other end of the second resistor is connected to the other end of the second resistor, the source of the fourth N-channel field effect transistor is connected to the ground terminal, the input end of the second diode is connected to the source of the second N-channel field effect transistor, the output end of the second diode is connected to the drain of the second N-channel field effect transistor, the input end of the fourth diode is connected to the source of the fourth N-channel field effect transistor, the output end of the fourth diode is connected to the drain of the fourth N-channel field effect transistor, the input end of the sixth diode is connected to the source of the second N-channel field effect transistor, the output end of the sixth diode is connected to the other end of the second resistor, the input ends of the second field effect transistor switch drive circuit and the second inverter are both connected to the second connection end, the output end of the second field effect transistor switch drive circuit is connected to the gate of the second N-channel field effect transistor, and the output end of the second inverter is connected to the gate of the fourth N-channel field effect transistor.

[0011] The seventh type: a digital speaker driving system, characterized by comprising a first connection end, a second connection end, a third connection end, a fourth connection end, a fifth connection end, a sixth connection end, a power supply terminal, a ground terminal, a speaker, a first ferrite and iron-rich conductor co-fired body, a second ferrite and iron-rich conductor co-fired body, a third ferrite and iron-rich conductor co-fired body, a first field effect transistor switch driving circuit, a second field effect transistor switch driving circuit, a third field effect transistor switch driving circuit, a fourth field effect transistor switch driving circuit, a fifth field effect transistor switch driving circuit, a sixth field effect transistor switch driving circuit, a first N-channel field effect transistor, a second N-channel field effect transistor, a third N-channel field effect transistor, a fourth N-channel field effect transistor, a fifth N-channel field effect transistor, and a sixth field effect transistor switch driving circuit. A transistor, a sixth N-channel field effect transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a ninth diode, a tenth diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first switching circuit, and a second switching circuit are provided on the speaker, wherein a forward winding and a reverse winding are respectively provided, one end of the forward winding and the reverse winding are connected to one end of the first ferrite and iron-rich conductor co-fired body, and the other ends of the forward winding and the reverse winding are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body and one end of the third ferrite and iron-rich conductor co-fired body. The other end of the first ferrite and the iron-rich conductor co-fired body is connected to the ground terminal, the other end of the second ferrite and the iron-rich conductor co-fired body is connected to one end of a fifth resistor, the other end of the fifth resistor is connected to the output end of a ninth diode, the input end of the ninth diode is connected to one end of the first switch circuit, the other end of the first switch circuit is connected to the power terminal, the other end of the third ferrite and the iron-rich conductor co-fired body is connected to one end of a sixth resistor, the other end of the sixth resistor is connected to the output end of a tenth diode, the input end of the tenth diode is connected to one end of the second switch circuit, the other end of the second switch circuit is connected to the power terminal, and one end of the first capacitor is connected to the power terminal. One end of the third capacitor is connected to the other end of the first capacitor, and the other end of the third capacitor is connected to the ground terminal. The first resistor is connected to the first capacitor in parallel, and the third resistor is connected to the third capacitor in parallel. One end of the second resistor is connected to the power supply terminal. One end of the fourth resistor is connected to the other end of the second resistor, and the other end of the fourth resistor is connected to the ground terminal. The second capacitor is connected to the second resistor in parallel, and the fourth capacitor is connected to the fourth resistor in parallel. The drain of the first N-channel field-effect transistor is connected to the power supply terminal, the drain of the third N-channel field-effect transistor is connected to the source of the first N-channel field-effect transistor, and the drain of the fifth N-channel field-effect transistor is connected to the source of the third N-channel field-effect transistor.The drain of the fifth N-channel field effect transistor is also connected to the other end of the co-fired body of the second ferrite and the iron-rich conductor, the source of the fifth N-channel field effect transistor is connected to the ground terminal, the input end of the first diode is connected to the source of the first N-channel field effect transistor, the output end of the first diode is connected to the drain of the first N-channel field effect transistor, the input end of the third diode is connected to the source of the third N-channel field effect transistor, the output end of the third diode is connected to the drain of the third N-channel field effect transistor, the input end of the fifth diode is connected to the source of the fifth N-channel field effect transistor, and the output end of the fifth diode is connected to the drain of the fifth N-channel field effect transistor. The input end of the seventh diode is connected to the source of the third N-channel field effect transistor, the output end of the seventh diode is connected to the other end of the first capacitor, the input end of the first field effect transistor switch drive circuit is connected to the first connection end, the output end of the first field effect transistor switch drive circuit is connected to the gate of the first N-channel field effect transistor, the input end of the third field effect transistor switch drive circuit is connected to the third connection end, the output end of the third field effect transistor switch drive circuit is connected to the gate of the third N-channel field effect transistor, the input end of the fifth field effect transistor switch drive circuit is connected to the fifth connection end, and the output end of the fifth field effect transistor switch drive circuit is connected to the gate of the fifth N-channel field effect transistor. The drain of the second N-channel field effect transistor is connected to the power supply terminal, the drain of the fourth N-channel field effect transistor is connected to the source of the second N-channel field effect transistor, the drain of the sixth N-channel field effect transistor is connected to the source of the fourth N-channel field effect transistor, and the drain of the sixth N-channel field effect transistor is also connected to the other end of the third ferrite and iron-rich conductor co-fired body, the source of the sixth N-channel field effect transistor is connected to the ground terminal, the input end of the second diode is connected to the source of the second N-channel field effect transistor, the output end of the second diode is connected to the drain of the second N-channel field effect transistor, and the input end of the fourth diode is connected to the fourth N-channel field effect transistor. The output end of the fourth diode is connected to the drain of the fourth N-channel field effect transistor, the input end of the sixth diode is connected to the source of the sixth N-channel field effect transistor, the output end of the sixth diode is connected to the drain of the sixth N-channel field effect transistor, the input end of the eighth diode is connected to the source of the fourth N-channel field effect transistor, the output end of the eighth diode is connected to the other end of the second resistor, the input end of the second field effect transistor switch drive circuit is connected to the second connection end, the output end of the second field effect transistor switch drive circuit is connected to the gate of the second N-channel field effect transistor, and the input end of the fourth field effect transistor switch drive circuit is connected to the fourth connection end.The output terminal of the fourth field effect transistor switch driving circuit is connected to the gate of the fourth N-channel field effect transistor, the input terminal of the sixth field effect transistor switch driving circuit is connected to the sixth connection terminal, and the output terminal of the sixth field effect transistor switch driving circuit is connected to the gate of the sixth N-channel field effect transistor.

[0012] Beneficial Effects of the Present Invention: By employing the aforementioned circuit, the present invention can reduce ∆T without changing the existing speaker structure and materials, and can also compensate for the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, and this feature gives the digital speaker drive system strong applicability. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and excellent stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic diagram of the circuit structure of two windings on the same frame of the loudspeaker and their connection method in the present invention.

[0014] Figure 2 This is a schematic diagram of the structure of the present invention that directly completes small signal reproduction using a loudspeaker structure.

[0015] Figure 3 This is a schematic diagram of the structure of the circuit used in the present invention to achieve small signal reproduction.

[0016] Figure 4 This is a circuit structure schematic diagram of the low-side common anode drive circuit in the present invention.

[0017] Figure 5 This is a circuit structure principle diagram of the high-side common cathode drive circuit in the present invention.

[0018] Figure 6 This is a circuit structure principle diagram of the full-bridge common anode type driving circuit in the present invention.

[0019] Figure 7 This is a circuit structure principle diagram of the full-bridge common anode type II drive circuit in the present invention.

[0020] Figure 8 This is a circuit structure principle diagram of the full-bridge common cathode type I driving circuit in the present invention.

[0021] Figure 9 This is a circuit structure principle diagram of the full-bridge common cathode type II driving circuit in the present invention.

[0022] Figure 10 This is a circuit structure principle diagram of the full-bridge common cathode type II driving circuit in the present invention.

[0023] Figure 11This is the waveform diagram of the ferrite and iron-rich conductor co-fired body at both ends of the circuit in the present invention.

[0024] Figure 12 This is the voltage and current waveform diagram when one of the windings in the loudspeaker of the present invention is working. Detailed implementation manners

[0025] 1. Basic principle and structure for reducing ∆T:

[0026] In Figure 1 : D1 and D2 are diodes. R1 and R2 are the forward and reverse winding current-limiting resistors respectively. L1 and L2 are the forward and reverse windings respectively. K1 and K2 are the switches driving L1 and L2 respectively. I is the current source. r1 and r2 are the internal resistances of L1 and L2 respectively. ß1 and ß2 are the forward conduction internal resistances of D1 and D2 respectively. I1 and I2 are the currents flowing through windings L1 and L2 respectively.

[0027] Assume that the B value of the loudspeaker is constant. As shown in the figure:

[0028] The currents flowing through the two windings of the loudspeaker are I1 and I2 respectively. The vibration system of the loudspeaker is in a new equilibrium position according to B(I1L1 - I2L2) / K, where K is the elastic coefficient of the vibration system.

[0029] For the convenience of analyzing the problem, we first assume that R1 = R2, L1 = L2, r1 = r2, ß1 = ß2. Then I1 = I2. The new equilibrium position of the loudspeaker coincides with the original equilibrium position.

[0030] The differential equation of the forced vibration of the loudspeaker is:

[0031]

[0032] In this equation, 0 < a < 2, and ∆I is the current generated in L1 and L2 when it is assumed that K2 does not work and K1 changes from the conducting state to the off state.

[0033] Assume = 0, then:

[0034] Assume that c, k, µ, and a in the equation are constant

[0035] Then ∆I becomes the main factor affecting ∆T, where ∆I = ∆U / R

[0036] As can be seen from Figure (1), adjusting the values of R1 and R2 can actively change the state of ∆T of the loudspeaker vibration system; if R1 → ∞ and R2 → ∞, the loudspeaker returns to the original state.

[0037] 2. Basic principle and structure for realizing small-signal reproduction

[0038] The first method is to use the speaker structure to directly complete the small signal reproduction, such as Figure 2 shown.

[0039] The second method is to use circuit to realize it, such as Figure 3 shown.

[0040] in: Figure 4-9 It uses the speaker structure to directly reproduce small signals; Figure 10 To achieve small signal reproduction using a driving circuit. Figures 4 to 10 The circuit structure involved in can also play a role in reducing ∆T.

[0041] Figure 11 The waveform of the co-fired ferrite and iron-rich conductor is tested at both ends of the circuit. Figure 12 The voltage and current waveforms of one of the speaker windings when it is working, where: 1-voltage waveform, 2-current waveform (conversion unit 1A / 20mv).

[0042] The "ferrite and iron-rich conductor co-fired body" in the following embodiments all adopts the "ferrite and iron-rich conductor co-fired body" disclosed in Chinese patent application number CN201511015215.1. When connecting the "ferrite and iron-rich conductor co-fired body" in a circuit, the iron-rich conductor in the "ferrite and iron-rich conductor co-fired body" is connected in series within the circuit, that is, the iron-rich conductor in the "ferrite and iron-rich conductor co-fired body" is connected to the circuit at both ends.

[0043] The following embodiments involve a method for DC bias damping of an electrodynamic loudspeaker voice coil directly driven by PDM and PWM signals, and a method for reproducing small signals in an audio signal within a PWM signal, namely, a method for representing narrow pulses. Examples 1 through 7 below are specific implementations for achieving these two objectives.

[0044] Example 1:

[0045] like Figure 4As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first field effect transistor switch driving circuit U1, a second field effect transistor switch driving circuit U2, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, and a switch circuit SW1, wherein the speaker is provided with a forward winding L1, a reverse winding L2, and a reverse winding L3. The winding L2, one end of the forward winding L1 and the reverse winding L2 are both connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3. The other end of the first ferrite and iron-rich conductor co-fired body X1 is connected to the power supply terminal VCC, the other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to the drain of the first N-channel field effect transistor Q1, and the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to the drain of the second N-channel field effect transistor Q2. The source of the first N-channel field effect transistor Q1 is connected to the second N-channel field effect transistor Q2. The sources of the first and second N-channel field effect transistors Q2 are connected to the ground terminal GND, one end of the first resistor R1 is connected to the other end of the first ferrite and iron-rich conductor co-fired body X1, one end of the second resistor R2 is connected to the other end of the first resistor R1, and the other end of the second resistor R2 is connected to the ground terminal GND, the first capacitor C1 is connected in parallel with the first resistor R1, and the second capacitor C2 is connected in parallel with the second resistor R2, the input end of the first diode D1 is connected between the second ferrite and iron-rich conductor co-fired body X2 and the first N-channel field effect transistor Q1, the output end of the first diode D1 is connected to one end of the switch circuit SW1, and the other end of the switch circuit SW1 is connected to the first resistor R1 and The first and second resistors R2 are connected, the input end of the second diode D2 is connected between the third ferrite and iron-rich conductor co-fired body X3 and the second N-channel field effect transistor Q2, the output end of the second diode D2 is connected between the first diode D1 and the switching circuit SW1, the input end of the first field effect transistor switch driving circuit U1 is connected to the first connection end HP-PWM, the output end of the first field effect transistor switch driving circuit U1 is connected to the gate of the first N-channel field effect transistor Q1, the input end of the second field effect transistor switch driving circuit U2 is connected to the second connection end HN-PWM, and the output end of the second field effect transistor switch driving circuit U2 is connected to the gate of the second N-channel field effect transistor Q2.

[0046] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0047] Example 2:

[0048] like Figure 5As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first field effect transistor switch driving circuit U1, a second field effect transistor switch driving circuit U2, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, and a switch circuit SW1, wherein the speaker is provided with a forward winding L1, The reverse winding L2, one end of the forward winding L1 and the reverse winding L2 are both connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3. The other end of the first ferrite and iron-rich conductor co-fired body X1 is connected to the ground terminal GND, the other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to the source of the first N-channel field effect transistor Q1, the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to the source of the second N-channel field effect transistor Q2, and the drain of the first N-channel field effect transistor Q1 is connected to the drain of the first N-channel field effect transistor Q1. The drains of the first and second N-channel field effect transistors Q2 are both connected to the power supply terminal VCC, one end of the first resistor R1 is connected to the power supply terminal VCC, one end of the second resistor R2 is connected to the other end of the first resistor R1, and the other end of the second resistor R2 is connected to the ground terminal GND, the first capacitor C1 is connected in parallel with the first resistor R1, and the second capacitor C2 is connected in parallel with the second resistor R2, the output end of the first diode D1 is connected between the third ferrite and iron-rich conductor co-fired body X3 and the second N-channel field effect transistor Q2, the input end of the first diode D1 is connected to one end of the switch circuit SW1, and the other end of the switch circuit SW1 is connected to the first resistor R1 and the second capacitor C2. The first FET switch driving circuit U1 is connected to the first connection terminal HP-PWM, the output terminal of the first FET switch driving circuit U1 is connected to the gate of the first N-channel FET Q1, the input terminal of the second FET switch driving circuit U2 is connected to the second connection terminal HN-PWM, and the output terminal of the second FET switch driving circuit U2 is connected to the gate of the second N-channel FET Q2.

[0049] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0050] Example 3:

[0051] like Figure 6As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first inverter U1, a second inverter U2, a first field effect transistor switch driving circuit U3, a second field effect transistor switch driving circuit U4, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a third N-channel field effect transistor Q3, a fourth N-channel field effect transistor Q4, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4. The speaker is provided with a forward winding L1 and a reverse winding L2, wherein one end of the forward winding L1 and the reverse winding L2 are connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3, respectively. The other end of the first ferrite and iron-rich conductor co-fired body X1 is connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3. The other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to one end of a third resistor R3, the other end of the third resistor R3 is connected to the input end of a seventh diode D7, the output end of the seventh diode D7 is connected to one end of a first switch circuit SW1, the other end of the first switch circuit SW1 is connected to the ground terminal GND, the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to one end of a fourth resistor R4, the other end of the fourth resistor R4 is connected to the input end of an eighth diode D8, the output end of the eighth diode D8 is connected to one end of the second switch circuit SW2, and the other end of the second switch circuit SW2 is connected to the ground terminal GN D is connected, one end of the first capacitor C1 is connected to the power supply terminal VCC, one end of the second capacitor C2 is connected to the other end of the first capacitor C1, and the other end of the second capacitor C2 is connected to the ground terminal GND, one end of the first resistor R1 is connected to the power supply terminal VCC, one end of the second resistor R2 is connected to the other end of the first resistor R1, and one end of the second resistor R2 is also connected to one end of the second capacitor C2, and the other end of the second resistor R2 is connected to the ground terminal GND, the drain of the first N-channel field effect transistor Q1 is connected to the power supply terminal VCC, and the drain of the third N-channel field effect transistor Q3 is connected to the source of the first N-channel field effect transistor Q1.The drain of the third N-channel field effect transistor Q3 is also connected to the other end of the second ferrite and iron-rich conductor co-fired body X2, the source of the third N-channel field effect transistor Q3 is connected to the ground terminal GND, the input end of the first diode D1 is connected to the source of the first N-channel field effect transistor Q1, the output end of the first diode D1 is connected to the drain of the first N-channel field effect transistor Q1, the input end of the third diode D3 is connected to the source of the third N-channel field effect transistor Q3, the output end of the third diode D3 is connected to the drain of the third N-channel field effect transistor Q3, and the fifth The input end of the diode D5 is connected to the source of the first N-channel field effect transistor Q1, the output end of the fifth diode D5 is connected to the other end of the first capacitor C1, the input ends of the first inverter U1 and the first field effect transistor switch drive circuit U3 are both connected to the first connection end HP-PWM, the output end of the first inverter U1 is connected to the gate of the first N-channel field effect transistor Q1, the output end of the first field effect transistor switch drive circuit U3 is connected to the gate of the third N-channel field effect transistor Q3, the drain of the second N-channel field effect transistor Q2 is connected to the power supply terminal VCC, and the fourth The drain of the N-channel field effect transistor Q4 is connected to the source of the second N-channel field effect transistor Q2, and the drain of the fourth N-channel field effect transistor Q4 is also connected to the other end of the third ferrite and iron-rich conductor co-fired body X3. The source of the fourth N-channel field effect transistor Q4 is connected to the ground terminal GND. The input end of the second diode D2 is connected to the source of the second N-channel field effect transistor Q2. The output end of the second diode D2 is connected to the drain of the second N-channel field effect transistor Q2. The input end of the fourth diode D4 is connected to the source of the fourth N-channel field effect transistor Q4. The output end of the fourth diode D4 is connected to the drain of the fourth N-channel field-effect transistor Q4. The input end of the sixth diode D6 is connected to the source of the second N-channel field-effect transistor Q2. The output end of the sixth diode D6 is connected to the other end of the first resistor R1. The input ends of the second inverter U2 and the second field-effect transistor switch drive circuit U4 are both connected to the second connection terminal HN-PWM. The output end of the second inverter U2 is connected to the gate of the second N-channel field-effect transistor Q2. The output end of the second field-effect transistor switch drive circuit U4 is connected to the gate of the fourth N-channel field-effect transistor Q4.

[0052] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0053] Example 4:

[0054] like Figure 7As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first inverter U1, a second inverter U2, a first field effect transistor switch driving circuit U3, a second field effect transistor switch driving circuit U4, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a third N-channel field effect transistor Q3, a fourth N-channel field effect transistor Q4, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first switch circuit SW1, and a second switch circuit SW2, wherein the speaker is respectively provided with a forward winding L1 and a reverse winding L2, one end of each of the forward winding L1 and the reverse winding L2 is connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and the third ferrite and iron-rich conductor co-fired body X3. One end of the first ferrite and iron-rich conductor co-fired body X1 is connected to the power supply terminal VCC, the other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to one end of a fifth resistor R5, the other end of the fifth resistor R5 is connected to the input end of a seventh diode D7, the output end of the seventh diode D7 is connected to one end of a first switch circuit SW1, the other end of the first switch circuit SW1 is connected to the ground terminal GND, the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to one end of a sixth resistor R6, the other end of the sixth resistor R6 is connected to the input end of an eighth diode D8, and the output end of the eighth diode D8 is connected to one end of the second switch circuit SW2 The other end of the second switch circuit SW2 is connected to the ground terminal GND, one end of the first capacitor C1 is connected to the power supply terminal VCC, one end of the third capacitor C3 is connected to the other end of the first capacitor C1, and the other end of the third capacitor C3 is connected to the ground terminal GND, the first resistor R1 is connected in parallel with the first capacitor C1, the third resistor R3 is connected in parallel with the third capacitor C3, one end of the second resistor R2 is connected to the power supply terminal VCC, one end of the fourth resistor R4 is connected to the other end of the second resistor R2, and the other end of the fourth resistor R4 is connected to the ground terminal GND, the second capacitor C2 is connected in parallel with the second resistor R2, and the fourth capacitor C4 is connected in parallel with the fourth resistor R4.The drain of the first N-channel field effect transistor Q1 is connected to the power supply terminal VCC, the drain of the third N-channel field effect transistor Q3 is connected to the source of the first N-channel field effect transistor Q1, and the drain of the third N-channel field effect transistor Q3 is also connected to the other end of the second ferrite and iron-rich conductor co-fired body X2, the source of the third N-channel field effect transistor Q3 is connected to the ground terminal GND, the input end of the first diode D1 is connected to the source of the first N-channel field effect transistor Q1, the output end of the first diode D1 is connected to the drain of the first N-channel field effect transistor Q1, and the input end of the third diode D3 is connected to the third N-channel field effect transistor Q3. The output end of the third diode D3 is connected to the drain of the third N-channel field effect transistor Q3, the input end of the fifth diode D5 is connected to the source of the first N-channel field effect transistor Q1, and the output end of the fifth diode D5 is connected to the other end of the first capacitor C1. The input ends of the first inverter U1 and the first field effect transistor switch driving circuit U3 are both connected to the first connection end HP-PWM, the output end of the first inverter U1 is connected to the gate of the first N-channel field effect transistor Q1, and the output end of the first field effect transistor switch driving circuit U3 is connected to the gate of the third N-channel field effect transistor Q3. The drain of the second N-channel field effect transistor Q2 is connected to the power supply terminal VCC, the drain of the fourth N-channel field effect transistor Q4 is connected to the source of the second N-channel field effect transistor Q2, and the drain of the fourth N-channel field effect transistor Q4 is also connected to the other end of the third ferrite and iron-rich conductor co-fired body X3, the source of the fourth N-channel field effect transistor Q4 is connected to the ground terminal GND, the input end of the second diode D2 is connected to the source of the second N-channel field effect transistor Q2, the output end of the second diode D2 is connected to the drain of the second N-channel field effect transistor Q2, and the input end of the fourth diode D4 is connected to the fourth N-channel field effect transistor Q3. The output end of the fourth diode D4 is connected to the drain of the fourth N-channel field effect transistor Q4. The input end of the sixth diode D6 is connected to the source of the second N-channel field effect transistor Q2. The output end of the sixth diode D6 is connected to the other end of the second resistor R2. The input ends of the second inverter U2 and the second field effect transistor switch drive circuit U4 are both connected to the second connection terminal HN-PWM. The output end of the second inverter U2 is connected to the gate of the second N-channel field effect transistor Q2. The output end of the second field effect transistor switch drive circuit U4 is connected to the gate of the fourth N-channel field effect transistor Q4.

[0055] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0056] Embodiment 5:

[0057] like Figure 8As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first field effect transistor switch driving circuit U1, a second field effect transistor switch driving circuit U2, a first inverter U3, a second inverter U4, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a third N-channel field effect transistor Q3, a fourth N-channel field effect transistor Q4, a first diode D1, a second diode D2, a third diode D3, a fourth A diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first capacitor C1, a second capacitor C2, a first switch circuit SW1, and a second switch circuit SW2 are provided on the speaker, wherein a forward winding L1 and a reverse winding L2 are respectively provided, one end of the forward winding L1 and the reverse winding L2 are connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3, and the other end of the first ferrite and iron-rich conductor co-fired body X1 is connected to one end of the first ferrite and iron-rich conductor co-fired body X2. One end of the second ferrite and iron-rich conductor co-fired body X2 is connected to the ground terminal GND, the other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to one end of a third resistor R3, the other end of the third resistor R3 is connected to the output end of a seventh diode D7, the input end of the seventh diode D7 is connected to one end of a first switch circuit SW1, the other end of the first switch circuit SW1 is connected to the power supply terminal VCC, the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to one end of a fourth resistor R4, the other end of the fourth resistor R4 is connected to the output end of an eighth diode D8, the input end of the eighth diode D8 is connected to one end of the second switch circuit SW2, and the other end of the second switch circuit SW2 is connected to the power supply terminal VC C are connected, one end of the first capacitor C1 is connected to the power supply terminal VCC, one end of the second capacitor C2 is connected to the other end of the first capacitor C1, and the other end of the second capacitor C2 is connected to the ground terminal GND, one end of the first resistor R1 is connected to the power supply terminal VCC, one end of the second resistor R2 is connected to the other end of the first resistor R1, and one end of the second resistor R2 is also connected to one end of the second capacitor C2, and the other end of the second resistor R2 is connected to the ground terminal GND, the drain of the first N-channel field effect transistor Q1 is connected to the power supply terminal VCC, and the drain of the third N-channel field effect transistor Q3 is connected to the source of the first N-channel field effect transistor Q1,The drain of the third N-channel field effect transistor Q3 is also connected to the other end of the second ferrite and iron-rich conductor co-fired body X2, the source of the third N-channel field effect transistor Q3 is connected to the ground terminal GND, the input end of the first diode D1 is connected to the source of the first N-channel field effect transistor Q1, the output end of the first diode D1 is connected to the drain of the first N-channel field effect transistor Q1, the input end of the third diode D3 is connected to the source of the third N-channel field effect transistor Q3, the output end of the third diode D3 is connected to the drain of the third N-channel field effect transistor Q3, and the fifth The input end of the diode D5 is connected to the source of the first N-channel field effect transistor Q1, the output end of the fifth diode D5 is connected to the other end of the first capacitor C1, the input ends of the first field effect transistor switch drive circuit U1 and the first inverter U3 are both connected to the first connection end HP-PWM, the output end of the first field effect transistor switch drive circuit U1 is connected to the gate of the first N-channel field effect transistor Q1, the output end of the first inverter U3 is connected to the gate of the third N-channel field effect transistor Q3, the drain of the second N-channel field effect transistor Q2 is connected to the power supply terminal VCC, and the fourth The drain of the N-channel field effect transistor Q4 is connected to the source of the second N-channel field effect transistor Q2, and the drain of the fourth N-channel field effect transistor Q4 is also connected to the other end of the third ferrite and iron-rich conductor co-fired body X3. The source of the fourth N-channel field effect transistor Q4 is connected to the ground terminal GND. The input end of the second diode D2 is connected to the source of the second N-channel field effect transistor Q2. The output end of the second diode D2 is connected to the drain of the second N-channel field effect transistor Q2. The input end of the fourth diode D4 is connected to the source of the fourth N-channel field effect transistor Q4. The output end of the fourth diode D4 is connected to the drain of the fourth N-channel field-effect transistor Q4. The input end of the sixth diode D6 is connected to the source of the second N-channel field-effect transistor Q2. The output end of the sixth diode D6 is connected to the other end of the first resistor R1. The input ends of the second field-effect transistor switch drive circuit U2 and the second inverter U4 are both connected to the second connection terminal HN-PWM. The output end of the second field-effect transistor switch drive circuit U2 is connected to the gate of the second N-channel field-effect transistor Q2. The output end of the second inverter U4 is connected to the gate of the fourth N-channel field-effect transistor Q4.

[0058] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0059] Example 6:

[0060] like Figure 9As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM, a second connection terminal HN-PWM, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first field effect transistor switch driving circuit U1, a second field effect transistor switch driving circuit U2, a first inverter U3, a second inverter U4, a first N-channel field effect transistor Q1, a second N-channel field effect transistor Q2, a third N-channel field effect transistor Q3, a fourth N-channel field effect transistor Q4, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first switch circuit SW1, and a second switch circuit SW2, wherein the speaker is respectively provided with a forward winding L1 and a reverse winding L2, one end of each of the forward winding L1 and the reverse winding L2 is connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and the third ferrite and iron-rich conductor co-fired body X3. One end of the first ferrite and the iron-rich conductor co-fired body X1 is connected to the ground terminal GND, the other end of the second ferrite and the iron-rich conductor co-fired body X2 is connected to one end of a fifth resistor R5, the other end of the fifth resistor R5 is connected to the output end of a seventh diode D7, the input end of the seventh diode D7 is connected to one end of the first switch circuit SW1, the other end of the first switch circuit SW1 is connected to the power supply terminal VCC, the other end of the third ferrite and the iron-rich conductor co-fired body X3 is connected to one end of a sixth resistor R6, the other end of the sixth resistor R6 is connected to the output end of an eighth diode D8, and the input end of the eighth diode D8 is connected to one end of the second switch circuit SW2 The other end of the second switch circuit SW2 is connected to the power terminal VCC, one end of the first capacitor C1 is connected to the power terminal VCC, one end of the third capacitor C3 is connected to the other end of the first capacitor C1, and the other end of the third capacitor C3 is connected to the ground terminal GND, the first resistor R1 is connected in parallel with the first capacitor C1, the third resistor R3 is connected in parallel with the third capacitor C3, one end of the second resistor R2 is connected to the power terminal VCC, one end of the fourth resistor R4 is connected to the other end of the second resistor R2, and the other end of the fourth resistor R4 is connected to the ground terminal GND, the second capacitor C2 is connected in parallel with the second resistor R2, and the fourth capacitor C4 is connected in parallel with the fourth resistor R4.The drain of the first N-channel field effect transistor Q1 is connected to the power supply terminal VCC, the drain of the third N-channel field effect transistor Q3 is connected to the source of the first N-channel field effect transistor Q1, and the drain of the third N-channel field effect transistor Q3 is also connected to the other end of the second ferrite and iron-rich conductor co-fired body X2, the source of the third N-channel field effect transistor Q3 is connected to the ground terminal GND, the input end of the first diode D1 is connected to the source of the first N-channel field effect transistor Q1, the output end of the first diode D1 is connected to the drain of the first N-channel field effect transistor Q1, and the input end of the third diode D3 is connected to the third N-channel field effect transistor Q3. The output end of the third diode D3 is connected to the drain of the third N-channel field effect transistor Q3, the input end of the fifth diode D5 is connected to the source of the first N-channel field effect transistor Q1, the output end of the fifth diode D5 is connected to the other end of the first capacitor C1, the input ends of the first field effect transistor switch driving circuit U1 and the first inverter U3 are both connected to the first connection end HP-PWM, the output end of the first field effect transistor switch driving circuit U1 is connected to the gate of the first N-channel field effect transistor Q1, and the output end of the first inverter U3 is connected to the gate of the third N-channel field effect transistor Q3. The drain of the second N-channel field effect transistor Q2 is connected to the power supply terminal VCC, the drain of the fourth N-channel field effect transistor Q4 is connected to the source of the second N-channel field effect transistor Q2, and the drain of the fourth N-channel field effect transistor Q4 is also connected to the other end of the third ferrite and iron-rich conductor co-fired body X3, the source of the fourth N-channel field effect transistor Q4 is connected to the ground terminal GND, the input end of the second diode D2 is connected to the source of the second N-channel field effect transistor Q2, the output end of the second diode D2 is connected to the drain of the second N-channel field effect transistor Q2, and the input end of the fourth diode D4 is connected to the fourth N-channel field effect transistor Q3. The output end of the fourth diode D4 is connected to the drain of the fourth N-channel field effect transistor Q4. The input end of the sixth diode D6 is connected to the source of the second N-channel field effect transistor Q2. The output end of the sixth diode D6 is connected to the other end of the second resistor R2. The input ends of the second field effect transistor switch drive circuit U2 and the second inverter U4 are both connected to the second connection terminal HN-PWM. The output end of the second field effect transistor switch drive circuit U2 is connected to the gate of the second N-channel field effect transistor Q2. The output end of the second inverter U4 is connected to the gate of the fourth N-channel field effect transistor Q4.

[0061] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

[0062] Embodiment seven:

[0063] like Figure 10As shown, a digital speaker driving system according to the present invention includes a first connection terminal HP-PWM1, a second connection terminal HN-PWM1, a third connection terminal HP-PWM2, a fourth connection terminal HN-PWM2, a fifth connection terminal HP-PWM3, a sixth connection terminal HN-PWM3, a power supply terminal VCC, a ground terminal GND, a speaker, a first ferrite and iron-rich conductor co-fired body X1, a second ferrite and iron-rich conductor co-fired body X2, a third ferrite and iron-rich conductor co-fired body X3, a first field effect transistor switch driving circuit U1, a second field effect transistor switch driving circuit U2, a third field effect transistor switch driving circuit U3, a fourth field effect transistor switch driving circuit U4, a fifth field effect transistor switch driving circuit U5, and a sixth field effect transistor switch driving circuit U6. Field effect transistor switch drive circuit U6, first N-channel field effect transistor Q1, second N-channel field effect transistor Q2, third N-channel field effect transistor Q3, fourth N-channel field effect transistor Q4, fifth N-channel field effect transistor Q5, sixth N-channel field effect transistor Q6, first diode D1, second diode D2, third diode D3, fourth diode D4, fifth diode D5, sixth diode D6, seventh diode D7, eighth diode D8, ninth diode D9, tenth diode D10, first resistor R1, second resistor R2, third resistor R3, fourth resistor R4, fifth resistor R5, sixth resistor R6, first capacitor C1, second capacitor C2, third capacitor C3, fourth capacitor C4 , a first switch circuit SW1, and a second switch circuit SW2, wherein a forward winding L1 and a reverse winding L2 are respectively provided on the speaker, one end of each of the forward winding L1 and the reverse winding L2 is connected to one end of the first ferrite and iron-rich conductor co-fired body X1, and the other ends of the forward winding L1 and the reverse winding L2 are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body X2 and one end of the third ferrite and iron-rich conductor co-fired body X3, the other end of the first ferrite and iron-rich conductor co-fired body X1 is connected to the ground terminal GND, the other end of the second ferrite and iron-rich conductor co-fired body X2 is connected to one end of a fifth resistor R5, the other end of the fifth resistor R5 is connected to the output end of a ninth diode D9, and the ninth diode D9 is connected to the ground terminal GND. An input end of the diode D9 is connected to one end of the first switch circuit SW1, the other end of the first switch circuit SW1 is connected to the power supply terminal VCC, the other end of the third ferrite and iron-rich conductor co-fired body X3 is connected to one end of a sixth resistor R6, the other end of the sixth resistor R6 is connected to the output end of a tenth diode D10, the input end of the tenth diode D10 is connected to one end of the second switch circuit SW2, the other end of the second switch circuit SW2 is connected to the power supply terminal VCC, one end of the first capacitor C1 is connected to the power supply terminal VCC, one end of the third capacitor C3 is connected to the other end of the first capacitor C1, and the other end of the third capacitor C3 is connected to the ground terminal GND.The first resistor R1 is connected to the first capacitor C1 in parallel, the third resistor R3 is connected to the third capacitor C3 in parallel, one end of the second resistor R2 is connected to the power supply terminal VCC, one end of the fourth resistor R4 is connected to the other end of the second resistor R2, the other end of the fourth resistor R4 is connected to the ground terminal GND, the second capacitor C2 is connected to the second resistor R2 in parallel, the fourth capacitor C4 is connected to the fourth resistor R4 in parallel, the drain of the first N-channel field effect transistor Q1 is connected to the power supply terminal VCC, the drain of the third N-channel field effect transistor Q3 is connected to the source of the first N-channel field effect transistor Q1, and the drain of the fifth N-channel field effect transistor Q5 is connected to the third N-channel field effect transistor Q6. The source of the fifth N-channel field effect transistor Q5 is connected to the source of the first N-channel field effect transistor Q1, and the drain of the fifth N-channel field effect transistor Q5 is also connected to the other end of the second ferrite and iron-rich conductor co-fired body X2. The source of the fifth N-channel field effect transistor Q5 is connected to the ground terminal GND. The input end of the first diode D1 is connected to the source of the first N-channel field effect transistor Q1, and the output end of the first diode D1 is connected to the drain of the first N-channel field effect transistor Q1. The input end of the third diode D3 is connected to the source of the third N-channel field effect transistor Q3, and the output end of the third diode D3 is connected to the drain of the third N-channel field effect transistor Q3. The input end of the fifth diode D5 is connected to the fifth N-channel field effect transistor Q 5, the output end of the fifth diode D5 is connected to the drain of the fifth N-channel field effect transistor Q5, the input end of the seventh diode D7 is connected to the source of the third N-channel field effect transistor Q3, the output end of the seventh diode D7 is connected to the other end of the first capacitor C1, the input end of the first field effect transistor switch drive circuit U1 is connected to the first connection end HP-PWM1, the output end of the first field effect transistor switch drive circuit U1 is connected to the gate of the first N-channel field effect transistor Q1, the input end of the third field effect transistor switch drive circuit U3 is connected to the third connection end HP-PWM2, and the output end of the third field effect transistor switch drive circuit U3 is connected to the third N-channel The gate of the fifth N-channel field effect transistor Q3 is connected to the input terminal of the fifth field effect transistor switch driving circuit U5 and the fifth connection terminal HP-PWM3. The output terminal of the fifth field effect transistor switch driving circuit U5 is connected to the gate of the fifth N-channel field effect transistor Q5. The drain of the second N-channel field effect transistor Q2 is connected to the power supply terminal VCC. The drain of the fourth N-channel field effect transistor Q4 is connected to the source of the second N-channel field effect transistor Q2. The drain of the sixth N-channel field effect transistor Q6 is connected to the source of the fourth N-channel field effect transistor Q4. The drain of the sixth N-channel field effect transistor Q6 is also connected to the other end of the third ferrite and iron-rich conductor co-fired body X3.The source of the sixth N-channel field effect transistor Q6 is connected to the ground terminal GND, the input end of the second diode D2 is connected to the source of the second N-channel field effect transistor Q2, the output end of the second diode D2 is connected to the drain of the second N-channel field effect transistor Q2, the input end of the fourth diode D4 is connected to the source of the fourth N-channel field effect transistor Q4, the output end of the fourth diode D4 is connected to the drain of the fourth N-channel field effect transistor Q4, the input end of the sixth diode D6 is connected to the source of the sixth N-channel field effect transistor Q6, the output end of the sixth diode D6 is connected to the drain of the sixth N-channel field effect transistor Q6, and the input end of the eighth diode D8 is connected to the source of the fourth N-channel field effect transistor Q4. The output end of the eighth diode D8 is connected to the other end of the second resistor R2. The input end of the second field-effect transistor switch driving circuit U2 is connected to the second connection end HN-PWM1. The output end of the second field-effect transistor switch driving circuit U2 is connected to the gate of the second N-channel field-effect transistor Q2. The input end of the fourth field-effect transistor switch driving circuit U4 is connected to the fourth connection end HN-PWM2. The output end of the fourth field-effect transistor switch driving circuit U4 is connected to the gate of the fourth N-channel field-effect transistor Q4. The input end of the sixth field-effect transistor switch driving circuit U6 is connected to the sixth connection end HN-PWM3. The output end of the sixth field-effect transistor switch driving circuit U6 is connected to the gate of the sixth N-channel field-effect transistor Q6.

[0064] By employing the aforementioned circuit, the present invention reduces ∆T without changing the existing speaker structure and materials, and overcomes the small signal reproduction issues of existing power switching tubes. This significantly improves the sound quality of electrodynamic digital speakers, making the digital speaker drive system highly adaptable. Furthermore, the overall circuit structure of this digital speaker drive system offers advantages such as simplicity, reliability, and stability.

Claims

1. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first field effect tube switch drive circuit (U1), a second field effect tube switch drive circuit (U2), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a first diode (D1), a second diode (D2), a first resistor (R1), a second resistor (R2), a first capacitor (C1), a second capacitor (C2), and a switch circuit (SW1). The speaker is provided with a forward winding (L1) and a reverse winding (L2), one end of each of the forward winding (L1) and the reverse winding (L2) is connected to one end of a first ferrite and iron-rich conductor co-fired body (X1), and the other ends of the forward winding (L1) and the reverse winding (L2) are connected to one end of a second ferrite and iron-rich conductor co-fired body (X2) and one end of a third ferrite and iron-rich conductor co-fired body (X3), respectively. The other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to a power supply terminal (VCC), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to a drain of a first N-channel field effect transistor (Q1), and the third ferrite and iron-rich conductor co-fired body (X3) is connected to a drain of a first N-channel field effect transistor (Q1). The other end of (X3) is connected to the drain of the second N-channel field effect transistor (Q2), the source of the first N-channel field effect transistor (Q1) and the source of the second N-channel field effect transistor (Q2) are both connected to the ground terminal (GND), one end of the first resistor (R1) is connected to the other end of the first ferrite and iron-rich conductor co-fired body (X1), one end of the second resistor (R2) is connected to the other end of the first resistor (R1), the other end of the second resistor (R2) is connected to the ground terminal (GND), the first capacitor (C1) is connected in parallel with the first resistor (R1), the second capacitor (C2) is connected in parallel with the second resistor (R2), and the input end of the first diode (D1) is connected to between the second ferrite and iron-rich conductor co-fired body (X2) and the first N-channel field effect transistor (Q1), the output end of the first diode (D1) is connected to one end of the switch circuit (SW1), the other end of the switch circuit (SW1) is connected between the first resistor (R1) and the second resistor (R2), the input end of the second diode (D2) is connected between the third ferrite and iron-rich conductor co-fired body (X3) and the second N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected between the first diode (D1) and the switch circuit (SW1), and the input end of the first field effect tube switch drive circuit (U1) is connected to the first connection end (HP-PWM),The output end of the first field effect transistor switch drive circuit (U1) is connected to the gate of the first N-channel field effect transistor (Q1), the input end of the second field effect transistor switch drive circuit (U2) is connected to the second connection end (HN-PWM), and the output end of the second field effect transistor switch drive circuit (U2) is connected to the gate of the second N-channel field effect transistor (Q2).

2. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first field effect tube switch drive circuit (U1), a second field effect tube switch drive circuit (U2), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a first diode (D1), a second diode (D2), a first resistor (R1), a second resistor (R2), a first capacitor (C1), a second capacitor (C2), and a switch circuit (SW1), wherein the speaker is respectively provided with There is a forward winding (L1) and a reverse winding (L2), one end of each of the forward winding (L1) and the reverse winding (L2) is connected to one end of a first ferrite and iron-rich conductor co-fired body (X1), the other end of each of the forward winding (L1) and the reverse winding (L2) is connected to one end of a second ferrite and iron-rich conductor co-fired body (X2) and one end of a third ferrite and iron-rich conductor co-fired body (X3), respectively, the other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to a ground terminal (GND), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to the source of a first N-channel field effect transistor (Q1), and the other end of the third ferrite and iron-rich conductor co-fired body (X3) is connected to the second N-channel field effect transistor (Q1). The source of the transistor (Q2) is connected, the drain of the first N-channel field effect transistor (Q1) and the drain of the second N-channel field effect transistor (Q2) are both connected to the power supply terminal (VCC), one end of the first resistor (R1) is connected to the power supply terminal (VCC), one end of the second resistor (R2) is connected to the other end of the first resistor (R1), and the other end of the second resistor (R2) is connected to the ground terminal (GND), the first capacitor (C1) is connected in parallel with the first resistor (R1), the second capacitor (C2) is connected in parallel with the second resistor (R2), and the output end of the first diode (D1) is connected between the third ferrite and iron-rich conductor co-fired body (X3) and the second N-channel field effect transistor (Q2) The input end of the first diode (D1) is connected to one end of the switch circuit (SW1), the other end of the switch circuit (SW1) is connected between the first resistor (R1) and the second resistor (R2), the output end of the second diode (D2) is connected between the second ferrite and iron-rich conductor co-fired body (X2) and the first N-channel field effect transistor (Q1), the input end of the second diode (D2) is connected between the first diode (D1) and the switch circuit (SW1), the input end of the first field effect transistor switch drive circuit (U1) is connected to the first connection end (HP-PWM), and the output end of the first field effect transistor switch drive circuit (U1) is connected to the gate of the first N-channel field effect transistor (Q1),The input end of the second field effect transistor switch drive circuit (U2) is connected to the second connection end (HN-PWM), and the output end of the second field effect transistor switch drive circuit (U2) is connected to the gate of the second N-channel field effect transistor (Q2).

3. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first inverter (U1), a second inverter (U2), a first field effect transistor switch drive circuit (U3), a second field effect transistor switch drive circuit (U4), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a third N-channel field effect transistor (Q3), a fourth N-channel field effect transistor (Q4), a first diode (D1), a second diode (D2 ), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7), an eighth diode (D8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a first capacitor (C1), a second capacitor (C2), a first switch circuit (SW1), and a second switch circuit (SW2), wherein a forward winding (L1) and a reverse winding (L2) are respectively provided on the speaker, one end of each of the forward winding (L1) and the reverse winding (L2) are connected to one end of the first ferrite and iron-rich conductor co-fired body (X1), and the other ends of each of the forward winding (L1) and the reverse winding (L2) are respectively connected to the second ferrite The first ferrite and the iron-rich conductor co-fired body (X2) are connected to one end of the first ferrite and the iron-rich conductor co-fired body (X3), the other end of the first ferrite and the iron-rich conductor co-fired body (X1) is connected to the power supply terminal (VCC), the other end of the second ferrite and the iron-rich conductor co-fired body (X2) is connected to one end of the third resistor (R3), the other end of the third resistor (R3) is connected to the input end of the seventh diode (D7), the output end of the seventh diode (D7) is connected to one end of the first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to the ground terminal (GND), the other end of the third ferrite and the iron-rich conductor co-fired body (X3) is connected to the fourth resistor (R4) one end of the first capacitor (C1) is connected to the power supply terminal (VCC), one end of the second capacitor (C2) is connected to the other end of the first capacitor (C1), the other end of the second capacitor (C2) is connected to the ground terminal (GND), one end of the first resistor (R1) is connected to the power supply terminal (VCC), and one end of the second resistor (R2) is connected to the other end of the first resistor (R1).One end of the second resistor (R2) is also connected to one end of the second capacitor (C2), the other end of the second resistor (R2) is connected to the ground terminal (GND), the drain of the first N-channel field effect transistor (Q1) is connected to the power supply terminal (VCC), the drain of the third N-channel field effect transistor (Q3) is connected to the source of the first N-channel field effect transistor (Q1), and the drain of the third N-channel field effect transistor (Q3) is also connected to the other end of the second ferrite and iron-rich conductor co-fired body (X2), the source of the third N-channel field effect transistor (Q3) is connected to the ground terminal (GND), the input end of the first diode (D1) is connected to the source of the first N-channel field effect transistor (Q1), and the second end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to the ground terminal (GND). The output end of the first diode (D1) is connected to the drain of the first N-channel field effect transistor (Q1), the input end of the third diode (D3) is connected to the source of the third N-channel field effect transistor (Q3), the output end of the third diode (D3) is connected to the drain of the third N-channel field effect transistor (Q3), the input end of the fifth diode (D5) is connected to the source of the first N-channel field effect transistor (Q1), the output end of the fifth diode (D5) is connected to the other end of the first capacitor (C1), the input end of the first inverter (U1) and the first field effect transistor switch drive circuit (U3) are both connected to the first connection end (HP-PWM), and the first inverter (U1) The output end is connected to the gate of the first N-channel field effect transistor (Q1), the output end of the first field effect transistor switch drive circuit (U3) is connected to the gate of the third N-channel field effect transistor (Q3), the drain of the second N-channel field effect transistor (Q2) is connected to the power supply terminal (VCC), the drain of the fourth N-channel field effect transistor (Q4) is connected to the source of the second N-channel field effect transistor (Q2), and the drain of the fourth N-channel field effect transistor (Q4) is also connected to the other end of the third ferrite and iron-rich conductor co-fired body (X3), the source of the fourth N-channel field effect transistor (Q4) is connected to the ground terminal (GND), and the input end of the second diode (D2) is connected to the second N-channel field effect transistor (Q2). The first and second terminals of the first resistor (R1) are connected to the source of the second N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected to the drain of the second N-channel field effect transistor (Q2), the input end of the fourth diode (D4) is connected to the source of the fourth N-channel field effect transistor (Q4), the output end of the fourth diode (D4) is connected to the drain of the fourth N-channel field effect transistor (Q4), the input end of the sixth diode (D6) is connected to the source of the second N-channel field effect transistor (Q2), the output end of the sixth diode (D6) is connected to the other end of the first resistor (R1), the input ends of the second inverter (U2) and the second field effect transistor switch drive circuit (U4) are both connected to the second connection end (HN-PWM),The output end of the second inverter (U2) is connected to the gate of the second N-channel field effect transistor (Q2), and the output end of the second field effect transistor switch drive circuit (U4) is connected to the gate of the fourth N-channel field effect transistor (Q4).

4. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first inverter (U1), a second inverter (U2), a first field effect transistor switch drive circuit (U3), a second field effect transistor switch drive circuit (U4), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a third N-channel field effect transistor (Q3), a fourth N-channel field effect transistor (Q4), a first diode (D1), a second diode (D2), a third diode (D3), and a A tube (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7), an eighth diode (D8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a fourth capacitor (C4), a first switch circuit (SW1), and a second switch circuit (SW2), wherein a forward winding (L1) and a reverse winding (L2) are respectively provided on the speaker, one end of each of the forward winding (L1) and the reverse winding (L2) being connected to one end of the first ferrite and iron-rich conductor co-fired body (X1), and the forward winding The other end of the group (L1) and the reverse winding (L2) are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body (X2) and one end of the third ferrite and iron-rich conductor co-fired body (X3), the other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to the power supply terminal (VCC), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to one end of the fifth resistor (R5), the other end of the fifth resistor (R5) is connected to the input end of the seventh diode (D7), the output end of the seventh diode (D7) is connected to one end of the first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to the ground terminal (GND), the third ferrite and iron-rich conductor co-fired body (X1) is connected to the power supply terminal (VCC), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to one end of the fifth resistor (R5), the other end of the fifth resistor (R5) is connected to the input end of the seventh diode (D7), the output end of the seventh diode (D7) is connected to one end of the first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to the ground terminal (GND), The other end of the body (X3) is connected to one end of the sixth resistor (R6), the other end of the sixth resistor (R6) is connected to the input end of the eighth diode (D8), the output end of the eighth diode (D8) is connected to one end of the second switch circuit (SW2), the other end of the second switch circuit (SW2) is connected to the ground terminal (GND), one end of the first capacitor (C1) is connected to the power supply terminal (VCC), one end of the third capacitor (C3) is connected to the other end of the first capacitor (C1), the other end of the third capacitor (C3) is connected to the ground terminal (GND), the first resistor (R1) is connected in parallel with the first capacitor (C1), and the third resistor (R3) is connected in parallel with the third capacitor (C3).One end of the second resistor (R2) is connected to the power supply terminal (VCC), one end of the fourth resistor (R4) is connected to the other end of the second resistor (R2), the other end of the fourth resistor (R4) is connected to the ground terminal (GND), the second capacitor (C2) is connected in parallel with the second resistor (R2), the fourth capacitor (C4) is connected in parallel with the fourth resistor (R4), the drain of the first N-channel field effect transistor (Q1) is connected to the power supply terminal (VCC), the drain of the third N-channel field effect transistor (Q3) is connected to the source of the first N-channel field effect transistor (Q1), and the drain of the third N-channel field effect transistor (Q3) is also connected to the other end of the second ferrite and iron-rich conductor co-fired body (X2). One end is connected to the other, the source of the third N-channel field effect transistor (Q3) is connected to the ground terminal (GND), the input end of the first diode (D1) is connected to the source of the first N-channel field effect transistor (Q1), the output end of the first diode (D1) is connected to the drain of the first N-channel field effect transistor (Q1), the input end of the third diode (D3) is connected to the source of the third N-channel field effect transistor (Q3), the output end of the third diode (D3) is connected to the drain of the third N-channel field effect transistor (Q3), the input end of the fifth diode (D5) is connected to the source of the first N-channel field effect transistor (Q1), and the output end of the fifth diode (D5) is connected to the drain of the first N-channel field effect transistor (Q1). The other end of the capacitor (C1) is connected, the input ends of the first inverter (U1) and the first field effect transistor switch drive circuit (U3) are both connected to the first connection end (HP-PWM), the output end of the first inverter (U1) is connected to the gate of the first N-channel field effect transistor (Q1), the output end of the first field effect transistor switch drive circuit (U3) is connected to the gate of the third N-channel field effect transistor (Q3), the drain of the second N-channel field effect transistor (Q2) is connected to the power supply terminal (VCC), the drain of the fourth N-channel field effect transistor (Q4) is connected to the source of the second N-channel field effect transistor (Q2), and the drain of the fourth N-channel field effect transistor (Q4) is also connected to the power supply terminal (VCC). The third ferrite is connected to the other end of the iron-rich conductor co-fired body (X3), the source of the fourth N-channel field effect transistor (Q4) is connected to the ground terminal (GND), the input end of the second diode (D2) is connected to the source of the second N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected to the drain of the second N-channel field effect transistor (Q2), the input end of the fourth diode (D4) is connected to the source of the fourth N-channel field effect transistor (Q4), the output end of the fourth diode (D4) is connected to the drain of the fourth N-channel field effect transistor (Q4), and the input end of the sixth diode (D6) is connected to the source of the second N-channel field effect transistor (Q2).The output end of the sixth diode (D6) is connected to the other end of the second resistor (R2), the input ends of the second inverter (U2) and the second field effect transistor switch drive circuit (U4) are both connected to the second connection end (HN-PWM), the output end of the second inverter (U2) is connected to the gate of the second N-channel field effect transistor (Q2), and the output end of the second field effect transistor switch drive circuit (U4) is connected to the gate of the fourth N-channel field effect transistor (Q4).

5. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first field effect tube switch driving circuit (U1), a second field effect tube switch driving circuit (U2), a first inverter (U3), a second inverter (U4), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a third N-channel field effect transistor (Q3), a fourth N-channel field effect transistor (Q4), a first diode (D1), a second diode ( D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7), an eighth diode (D8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a first capacitor (C1), a second capacitor (C2), a first switch circuit (SW1), and a second switch circuit (SW2), wherein a forward winding (L1) and a reverse winding (L2) are respectively provided on the speaker, one end of each of the forward winding (L1) and the reverse winding (L2) is connected to one end of the first ferrite and iron-rich conductor co-fired body (X1), and the other end of each of the forward winding (L1) and the reverse winding (L2) is respectively connected to the second One end of the ferrite and iron-rich conductor co-fired body (X2) and one end of the third ferrite and iron-rich conductor co-fired body (X3) are connected, the other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to the ground terminal (GND), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to one end of the third resistor (R3), the other end of the third resistor (R3) is connected to the output end of the seventh diode (D7), the input end of the seventh diode (D7) is connected to one end of the first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to the power supply terminal (VCC), the other end of the third ferrite and iron-rich conductor co-fired body (X3) is connected to the fourth resistor (R4) one end of the first capacitor (C1) is connected to the power terminal (VCC), one end of the second capacitor (C2) is connected to the other end of the first capacitor (C1), the other end of the second capacitor (C2) is connected to the ground terminal (GND), one end of the first resistor (R1) is connected to the power terminal (VCC), and one end of the second resistor (R2) is connected to the other end of the first resistor (R1).One end of the second resistor (R2) is also connected to one end of the second capacitor (C2), the other end of the second resistor (R2) is connected to the ground terminal (GND), the drain of the first N-channel field effect transistor (Q1) is connected to the power supply terminal (VCC), the drain of the third N-channel field effect transistor (Q3) is connected to the source of the first N-channel field effect transistor (Q1), and the drain of the third N-channel field effect transistor (Q3) is also connected to the other end of the second ferrite and iron-rich conductor co-fired body (X2), the source of the third N-channel field effect transistor (Q3) is connected to the ground terminal (GND), the input end of the first diode (D1) is connected to the source of the first N-channel field effect transistor (Q1), and the second end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to the ground terminal (GND). The output end of the first diode (D1) is connected to the drain of the first N-channel field effect transistor (Q1), the input end of the third diode (D3) is connected to the source of the third N-channel field effect transistor (Q3), the output end of the third diode (D3) is connected to the drain of the third N-channel field effect transistor (Q3), the input end of the fifth diode (D5) is connected to the source of the first N-channel field effect transistor (Q1), the output end of the fifth diode (D5) is connected to the other end of the first capacitor (C1), the input ends of the first field effect transistor switch drive circuit (U1) and the first inverter (U3) are both connected to the first connection end (HP-PWM), and the first field effect transistor switch drive circuit (U1) and the first inverter (U3) are connected to the first connection end (HP-PWM). The output end of the circuit (U1) is connected to the gate of the first N-channel field effect transistor (Q1), the output end of the first inverter (U3) is connected to the gate of the third N-channel field effect transistor (Q3), the drain of the second N-channel field effect transistor (Q2) is connected to the power supply terminal (VCC), the drain of the fourth N-channel field effect transistor (Q4) is connected to the source of the second N-channel field effect transistor (Q2), and the drain of the fourth N-channel field effect transistor (Q4) is also connected to the other end of the third ferrite and iron-rich conductor co-fired body (X3), the source of the fourth N-channel field effect transistor (Q4) is connected to the ground terminal (GND), and the input end of the second diode (D2) is connected to the second N-channel field effect transistor (Q2). The first and second MOSFETs (Q2) are connected to the source of the first N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected to the drain of the second N-channel field effect transistor (Q2), the input end of the fourth diode (D4) is connected to the source of the fourth N-channel field effect transistor (Q4), the output end of the fourth diode (D4) is connected to the drain of the fourth N-channel field effect transistor (Q4), the input end of the sixth diode (D6) is connected to the source of the second N-channel field effect transistor (Q2), the output end of the sixth diode (D6) is connected to the other end of the first resistor (R1), the input ends of the second field effect transistor switch drive circuit (U2) and the second inverter (U4) are both connected to the second connection end (HN-PWM),The output end of the second field effect transistor switch drive circuit (U2) is connected to the gate of the second N-channel field effect transistor (Q2), and the output end of the second inverter (U4) is connected to the gate of the fourth N-channel field effect transistor (Q4).

6. A digital loudspeaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM), a second connection terminal (HN-PWM), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first field effect tube switch drive circuit (U1), a second field effect tube switch drive circuit (U2), a first inverter (U3), a second inverter (U4), a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a third N-channel field effect transistor (Q3), a fourth N-channel field effect transistor (Q4), a first diode (D1), a second diode (D2), a third diode (D3), a A tube (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7), an eighth diode (D8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a fourth capacitor (C4), a first switch circuit (SW1), and a second switch circuit (SW2), wherein a forward winding (L1) and a reverse winding (L2) are respectively provided on the speaker, one end of each of the forward winding (L1) and the reverse winding (L2) being connected to one end of the first ferrite and iron-rich conductor co-fired body (X1), and the forward winding The other end of the group (L1) and the reverse winding (L2) are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body (X2) and one end of the third ferrite and iron-rich conductor co-fired body (X3), the other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to the ground terminal (GND), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to one end of a fifth resistor (R5), the other end of the fifth resistor (R5) is connected to the output end of a seventh diode (D7), the input end of the seventh diode (D7) is connected to one end of a first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to a power supply terminal (VCC), the third ... the power supply terminal (VCC), The other end of the body (X3) is connected to one end of the sixth resistor (R6), the other end of the sixth resistor (R6) is connected to the output end of the eighth diode (D8), the input end of the eighth diode (D8) is connected to one end of the second switch circuit (SW2), the other end of the second switch circuit (SW2) is connected to the power supply terminal (VCC), one end of the first capacitor (C1) is connected to the power supply terminal (VCC), one end of the third capacitor (C3) is connected to the other end of the first capacitor (C1), the other end of the third capacitor (C3) is connected to the ground terminal (GND), the first resistor (R1) is connected in parallel with the first capacitor (C1), and the third resistor (R3) is connected in parallel with the third capacitor (C3).One end of the second resistor (R2) is connected to the power supply terminal (VCC), one end of the fourth resistor (R4) is connected to the other end of the second resistor (R2), the other end of the fourth resistor (R4) is connected to the ground terminal (GND), the second capacitor (C2) is connected in parallel with the second resistor (R2), the fourth capacitor (C4) is connected in parallel with the fourth resistor (R4), the drain of the first N-channel field effect transistor (Q1) is connected to the power supply terminal (VCC), the drain of the third N-channel field effect transistor (Q3) is connected to the source of the first N-channel field effect transistor (Q1), and the drain of the third N-channel field effect transistor (Q3) is also connected to the other end of the second ferrite and iron-rich conductor co-fired body (X2). One end is connected to the other, the source of the third N-channel field effect transistor (Q3) is connected to the ground terminal (GND), the input end of the first diode (D1) is connected to the source of the first N-channel field effect transistor (Q1), the output end of the first diode (D1) is connected to the drain of the first N-channel field effect transistor (Q1), the input end of the third diode (D3) is connected to the source of the third N-channel field effect transistor (Q3), the output end of the third diode (D3) is connected to the drain of the third N-channel field effect transistor (Q3), the input end of the fifth diode (D5) is connected to the source of the first N-channel field effect transistor (Q1), and the output end of the fifth diode (D5) is connected to the drain of the first N-channel field effect transistor (Q1). The other end of the capacitor (C1) is connected, the input ends of the first field effect transistor switch drive circuit (U1) and the first inverter (U3) are both connected to the first connection end (HP-PWM), the output end of the first field effect transistor switch drive circuit (U1) is connected to the gate of the first N-channel field effect transistor (Q1), the output end of the first inverter (U3) is connected to the gate of the third N-channel field effect transistor (Q3), the drain of the second N-channel field effect transistor (Q2) is connected to the power supply terminal (VCC), the drain of the fourth N-channel field effect transistor (Q4) is connected to the source of the second N-channel field effect transistor (Q2), and the drain of the fourth N-channel field effect transistor (Q4) is also connected to the power supply terminal (VCC). The third ferrite is connected to the other end of the iron-rich conductor co-fired body (X3), the source of the fourth N-channel field effect transistor (Q4) is connected to the ground terminal (GND), the input end of the second diode (D2) is connected to the source of the second N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected to the drain of the second N-channel field effect transistor (Q2), the input end of the fourth diode (D4) is connected to the source of the fourth N-channel field effect transistor (Q4), the output end of the fourth diode (D4) is connected to the drain of the fourth N-channel field effect transistor (Q4), and the input end of the sixth diode (D6) is connected to the source of the second N-channel field effect transistor (Q2).The output end of the sixth diode (D6) is connected to the other end of the second resistor (R2), the input ends of the second field effect transistor switch drive circuit (U2) and the second inverter (U4) are both connected to the second connection end (HN-PWM), the output end of the second field effect transistor switch drive circuit (U2) is connected to the gate of the second N-channel field effect transistor (Q2), and the output end of the second inverter (U4) is connected to the gate of the fourth N-channel field effect transistor (Q4).

7. A digital speaker driving system, characterized in that: The invention comprises a first connection terminal (HP-PWM1), a second connection terminal (HN-PWM1), a third connection terminal (HP-PWM2), a fourth connection terminal (HN-PWM2), a fifth connection terminal (HP-PWM3), a sixth connection terminal (HN-PWM3), a power supply terminal (VCC), a ground terminal (GND), a speaker, a first ferrite and iron-rich conductor co-fired body (X1), a second ferrite and iron-rich conductor co-fired body (X2), a third ferrite and iron-rich conductor co-fired body (X3), a first field effect transistor switch drive circuit (U1), a second field effect transistor switch drive circuit (U2), a third field effect transistor switch drive circuit (U3), a fourth field effect transistor switch drive circuit (U4), a fifth field effect transistor switch drive circuit (U5), and a fifth field effect transistor switch drive circuit (U6). a first N-channel field effect transistor (Q1), a second N-channel field effect transistor (Q2), a third N-channel field effect transistor (Q3), a fourth N-channel field effect transistor (Q4), a fifth N-channel field effect transistor (Q5), a sixth N-channel field effect transistor (Q6), a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7), an eighth diode (D8), a ninth diode (D9), a tenth diode (D10), a first resistor (R1), a second resistor (R2 ), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a fourth capacitor (C4), a first switch circuit (SW1), and a second switch circuit (SW2), wherein a forward winding (L1) and a reverse winding (L2) are respectively provided on the speaker, one end of the forward winding (L1) and the reverse winding (L2) are both connected to one end of the first ferrite and iron-rich conductor co-fired body (X1), and the other ends of the forward winding (L1) and the reverse winding (L2) are respectively connected to one end of the second ferrite and iron-rich conductor co-fired body (X2) and one end of the third ferrite and iron-rich conductor co-fired body (X3). The other end of the first ferrite and iron-rich conductor co-fired body (X1) is connected to the ground terminal (GND), the other end of the second ferrite and iron-rich conductor co-fired body (X2) is connected to one end of a fifth resistor (R5), the other end of the fifth resistor (R5) is connected to the output end of a ninth diode (D9), the input end of the ninth diode (D9) is connected to one end of a first switch circuit (SW1), the other end of the first switch circuit (SW1) is connected to a power supply terminal (VCC), the other end of the third ferrite and iron-rich conductor co-fired body (X3) is connected to one end of a sixth resistor (R6), the other end of the sixth resistor (R6) is connected to the output end of a tenth diode (D10),The input end of the tenth diode (D10) is connected to one end of the second switch circuit (SW2), the other end of the second switch circuit (SW2) is connected to the power supply terminal (VCC), one end of the first capacitor (C1) is connected to the power supply terminal (VCC), one end of the third capacitor (C3) is connected to the other end of the first capacitor (C1), the other end of the third capacitor (C3) is connected to the ground terminal (GND), the first resistor (R1) is connected in parallel with the first capacitor (C1), the third resistor (R3) is connected in parallel with the third capacitor (C3), one end of the second resistor (R2) is connected to the power supply terminal (VCC), one end of the fourth resistor (R4) is connected to the other end of the second resistor (R2), and the The fourth resistor (R4) is connected to the ground terminal (GND), the second capacitor (C2) is connected in parallel with the second resistor (R2), the fourth capacitor (C4) is connected in parallel with the fourth resistor (R4), the drain of the first N-channel field effect transistor (Q1) is connected to the power supply terminal (VCC), the drain of the third N-channel field effect transistor (Q3) is connected to the source of the first N-channel field effect transistor (Q1), the drain of the fifth N-channel field effect transistor (Q5) is connected to the source of the third N-channel field effect transistor (Q3), and the drain of the fifth N-channel field effect transistor (Q5) is also connected to the other end of the second ferrite and iron-rich conductor co-fired body (X2), the fifth N-channel The source of the field effect transistor (Q5) is connected to the ground terminal (GND), the input end of the first diode (D1) is connected to the source of the first N-channel field effect transistor (Q1), the output end of the first diode (D1) is connected to the drain of the first N-channel field effect transistor (Q1), the input end of the third diode (D3) is connected to the source of the third N-channel field effect transistor (Q3), the output end of the third diode (D3) is connected to the drain of the third N-channel field effect transistor (Q3), the input end of the fifth diode (D5) is connected to the source of the fifth N-channel field effect transistor (Q5), and the output end of the fifth diode (D5) is connected to the drain of the fifth N-channel field effect transistor (Q5). The input end of the seventh diode (D7) is connected to the drain of the third N-channel field effect transistor (Q3), the output end of the seventh diode (D7) is connected to the other end of the first capacitor (C1), the input end of the first field effect transistor switch drive circuit (U1) is connected to the first connection end (HP-PWM1), the output end of the first field effect transistor switch drive circuit (U1) is connected to the gate of the first N-channel field effect transistor (Q1), the input end of the third field effect transistor switch drive circuit (U3) is connected to the third connection end (HP-PWM2), and the output end of the third field effect transistor switch drive circuit (U3) is connected to the gate of the third N-channel field effect transistor (Q3).The input end of the fifth field effect transistor switch drive circuit (U5) is connected to the fifth connection end (HP-PWM3), the output end of the fifth field effect transistor switch drive circuit (U5) is connected to the gate of the fifth N-channel field effect transistor (Q5), the drain of the second N-channel field effect transistor (Q2) is connected to the power supply terminal (VCC), the drain of the fourth N-channel field effect transistor (Q4) is connected to the source of the second N-channel field effect transistor (Q2), the drain of the sixth N-channel field effect transistor (Q6) is connected to the source of the fourth N-channel field effect transistor (Q4), and the sixth N-channel field effect transistor (Q6) is connected to the source of the fourth N-channel field effect transistor (Q4). The drain of the N-channel field effect transistor (Q6) is also connected to the other end of the third ferrite and iron-rich conductor co-fired body (X3), the source of the sixth N-channel field effect transistor (Q6) is connected to the ground terminal (GND), the input end of the second diode (D2) is connected to the source of the second N-channel field effect transistor (Q2), the output end of the second diode (D2) is connected to the drain of the second N-channel field effect transistor (Q2), the input end of the fourth diode (D4) is connected to the source of the fourth N-channel field effect transistor (Q4), and the output end of the fourth diode (D4) is connected to the fourth N-channel field effect transistor (Q4). The drain of the field effect transistor (Q4) is connected, the input end of the sixth diode (D6) is connected to the source of the sixth N-channel field effect transistor (Q6), the output end of the sixth diode (D6) is connected to the drain of the sixth N-channel field effect transistor (Q6), the input end of the eighth diode (D8) is connected to the source of the fourth N-channel field effect transistor (Q4), the output end of the eighth diode (D8) is connected to the other end of the second resistor (R2), the input end of the second field effect transistor switch drive circuit (U2) is connected to the second connection end (HN-PWM1), and the second field effect transistor (U2) is connected to the second connection end (HN-PWM1). The output end of the field effect transistor switch drive circuit (U2) is connected to the gate of the second N-channel field effect transistor (Q2), the input end of the fourth field effect transistor switch drive circuit (U4) is connected to the fourth connection end (HN-PWM2), the output end of the fourth field effect transistor switch drive circuit (U4) is connected to the gate of the fourth N-channel field effect transistor (Q4), the input end of the sixth field effect transistor switch drive circuit (U6) is connected to the sixth connection end (HN-PWM3), and the output end of the sixth field effect transistor switch drive circuit (U6) is connected to the gate of the sixth N-channel field effect transistor (Q6).

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