MEMS wafer bonding mechanism and in-situ unsealing method for MEMS wafer bonding

Abstract

The present invention relates to a MEMS wafer bonding mechanism and an in-situ unsealing method for MEMS wafer bonding. The MEMS wafer bonding mechanism comprises: a cap member, a MEMS functional part, a support member and a first heating component, the cap member is bonded to the support member, and the cap member and the support member cooperate to form a bonding portion, the MEMS functional part is bonded to the bonding portion, the first heating component is installed on the support member, and the first heating component is used to heat the bonding portion between the cap member and the support member. Compared with the traditional in-situ unsealing method, the above-mentioned MEMS wafer bonding mechanism can achieve in-situ unsealing of the cap member and the support member in a more targeted manner.

Description

Technical Field

[0001] The invention relates to the technical field of micro-electromechanical systems, and in particular to a MEMS wafer bonding mechanism and an in-situ unsealing method for MEMS wafer bonding. Background Art

[0002] Micro-Electro-Mechanical-System (MEMS) is manufactured based on microelectronics manufacturing technology combined with micromachining technology. Typical MEMS devices include accelerometers, gyroscopes, pressure sensors, microphones, micromirrors, etc. MEMS devices have many advantages such as small size, light weight, low power consumption, low cost, and easy integration. They are currently widely used in many fields such as consumer electronics, automobiles, industry, biomedicine, aerospace, national defense and military. Since the MEMS wafer bonding process covers the silicon cap on the upper surface of the MEMS wafer bonding mechanism and performs wafer-level hermetic packaging on the MEMS functional components, the internal structure of the MEMS cannot be directly observed. Therefore, when the MEMS chip fails and its internal structure needs to be observed and analyzed, the MEMS chip needs to be unsealed and the silicon cap on the upper surface needs to be removed to observe its internal structure. At present, the methods for MEMS wafer bonding decapsulation mainly include physical destructive decapsulation, chemical corrosive decapsulation and high-temperature decapsulation, but these methods all have their shortcomings. It is necessary to develop new methods for MEMS wafer bonding decapsulation to better observe its internal structure, so as to better carry out reliability research work such as failure analysis. Summary of the invention

[0003] Based on this, it is necessary to provide a MEMS wafer bonding mechanism and an in-situ unsealing method for MEMS wafer bonding to address the problem that traditional methods cannot effectively remove the silicon cap from the MEMS wafer bonding mechanism.

[0004] A MEMS wafer bonding mechanism. The MEMS wafer bonding mechanism comprises: a cap member, a MEMS functional part, a support member and a first heating component, wherein the cap member is bonded to the support member, and the cap member and the support member cooperate to form a bonding portion, the MEMS functional part is bonded to the bonding portion, the first heating component is mounted on the support member, and the first heating component is used to heat the bonding portion between the cap member and the support member.

[0005] An in-situ unsealing method for MEMS wafer bonding adopts the MEMS wafer bonding mechanism, comprising the following steps: determining the bonding point between the cap member and the support member, and installing the first heating component at the bonding point; when the cap member needs to be unsealed in situ, heating the first heating component; after the first heating component is heated for a preset time, the temperature of the bonding point between the cap member and the support member reaches an unsealing state; and unsealing and disassembling the cap member.

[0006] In one embodiment, the first heating component includes a first heating element and a second heating element, the first heating element is circumferentially arranged on the support element along a side of the bonding point close to the bonding portion, the second heating element is circumferentially arranged on the support element along a side of the bonding point away from the bonding portion, and the first heating element is provided with a first power terminal, the first power terminal is located outside the support element, and the second heating element is provided with a second power terminal, the second power terminal is located outside the support element.

[0007] In one embodiment, the first heating component includes a third heating element, which is buried in the support member along the circumference of the bonding point, and the heating surface of the third heating element is opposite to the bottom of the bonding point. The third heating element is provided with a third power terminal, and the third power terminal is located outside the support member.

[0008] In one embodiment, the MEMS wafer bonding mechanism further includes a second heating component, the second heating component is provided with a bonding point between the MEMS functional part and the support member, and the second heating component is provided with a fourth power terminal, and the fourth power terminal is located outside the support member.

[0009] In one of the embodiments, in the step of determining the bonding point between the cap member and the support member and installing the first heating component at the bonding point, the first heating component is arranged on the support member along the circumference of the bonding point, and the power terminal of the first heating component is located outside the support member.

[0010] In one of the embodiments, in the step where the first heating component is disposed on the support member along the circumference of the bonding point and the power terminal of the first heating component is located outside the support member, the resistivity of the first heating component is increased by adding a semiconductor in the first heating component.

[0011] In one of the embodiments, in the step where the first heating component is arranged on the support member along the circumference of the bonding point, and the power terminal of the first heating component is located outside the support member, there may be multiple first heating components, and both the inner ring area and the outer ring area of ​​the bonding point are provided with the first heating components, and the first heating component located in the inner ring area of ​​the bonding point and the first heating component located in the outer ring area of ​​the bonding point are both provided with two power terminals.

[0012] In one of the embodiments, when the cap member needs to be unsealed in situ, in the step of heating the first heating component, the MEMS wafer bonding mechanism also includes a disassembly rod and an adhesive, and the disassembly rod is bonded to the cap member through the adhesive.

[0013] In one of the embodiments, in the step of unsealing and disassembling the cap member, the cap member is taken out by means of the disassembly rod.

[0014] When the above-mentioned MEMS wafer bonding mechanism is in use, the MEMS functional parts refer to the required functional parts used to assemble and form the MEMS wafer bonding mechanism, such as silicon wafers. Then, according to the assembly requirements, the assembly space required for the MEMS functional parts and the assembly position on the support are determined. At the same time, according to the assembly requirements of the MEMS functional parts, the range and space of the bonding part are determined to ensure that the MEMS functional parts can be effectively installed in the bonding part. Further, the cap member can be a glass material, a silicon cap plate or a silicon cap block, etc. The support member is a glass plate, a glass block or a silicon material, etc. The connection between the cap member and the support member is achieved by bonding (a technology that directly combines under certain conditions and bonds the wafer into one by van der Waals force, molecular force or atomic force.). After the cap member and the support member are bonded, the first heating component can be installed on the side of the bonding point between the cap member and the support member, or the first heating component can be buried at the bottom of the bonding point between the cap member and the support member. Because the bonding strength between the cap part and the support part decreases at high temperature, thus achieving unsealing, therefore, when the MEMS wafer bonding mechanism needs to disassemble the cap part, the first heating component is used for heating, and the bonding strength between the cap part and the support part continues to decrease until the cap part and the support part are separated. Compared with the traditional in-situ unsealing method, the above-mentioned MEMS wafer bonding mechanism can achieve in-situ unsealing of the cap part and the support part in a more targeted manner.

[0015] When the above-mentioned in-situ unsealing method of MEMS wafer bonding is used, the connection between the cap and the support is achieved by bonding (a technique of directly combining under certain conditions, bonding the wafer into one body through van der Waals force, molecular force or atomic force.). After the cap and the support are bonded, the bonding point between the cap and the support is determined, and the first heating component can be installed on the side of the bonding point between the cap and the support, or the first heating component can be buried at the bottom of the bonding point between the cap and the support. Because the bonding strength between the cap and the support decreases at high temperatures to achieve unsealing, therefore, when the MEMS wafer bonding mechanism needs to unseal the cap in situ, the first heating component is used for heating, and the bonding strength between the cap and the support continues to decrease until the cap and the support are separated. Compared with the traditional in-situ unsealing method, the above-mentioned in-situ unsealing method of MEMS wafer bonding can achieve in-situ unsealing of the cap and the support in a more targeted manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the assembly structure of the MEMS wafer bonding mechanism;

[0017] Figure 2 It is a partial structural schematic diagram of a MEMS wafer bonding mechanism according to one embodiment;

[0018] Figure 3 It is a partial structural schematic diagram of a MEMS wafer bonding mechanism according to another embodiment;

[0019] Figure 4 Flowchart of the in-situ decapsulation method for MEMS wafer bonding.

[0020] 10. Bonding portion, 20. Bonding point between the cap member and the support member, 30. Bonding point between the MEMS functional part and the support member, 100. Cap member, 200. MEMS functional part, 300. Support member, 400. First heating component, 410. First heating member, 411. First power terminal, 420. Second heating member, 421. Second power terminal. DETAILED DESCRIPTION

[0021] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0022] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0024] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0026] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0027] Combination Figures 1 to 3 As shown, in one embodiment, the MEMS wafer bonding mechanism includes: a cap member 100, a MEMS functional part 200, a support member 300 and a first heating component 400, the cap member 100 is bonded to the support member 300, and the cap member 100 and the support member 300 cooperate to form a bonding portion 10, the MEMS functional part 200 is bonded to the bonding portion 10, the first heating component 400 is installed on the support member 300, and the first heating component 400 is used to heat the bonding portion between the cap member 100 and the support member 300.

[0028] When the above-mentioned MEMS wafer bonding mechanism is in use, the MEMS functional part 200 refers to the required functional parts used to assemble and form the MEMS wafer bonding mechanism, such as silicon wafers, etc. Then, according to the assembly requirements, the assembly space required for the MEMS functional part 200 and the assembly position on the support member 300 are determined. At the same time, according to the assembly requirements of the MEMS functional part 200, the range and space of the bonding part 10 are determined to ensure that the MEMS functional part 200 can be effectively installed in the bonding part 10. Further, the cap member 100 can be a glass material, a silicon cap plate or a silicon cap block. The support member 300 is a glass plate, a glass block or a silicon material, etc. The connection between the cap member 100 and the support member 300 is achieved by bonding (a technology that directly combines under certain conditions and bonds the wafers together through van der Waals forces, molecular forces or atomic forces.). After the cap 100 and the support 300 are bonded, the first heating component 400 can be installed on the side of the bonding point between the cap 100 and the support 300, or the first heating component 400 can be buried at the bottom of the bonding point between the cap 100 and the support 300. Because the bonding strength between the cap 100 and the support 300 decreases at high temperatures to achieve unsealing, when the MEMS wafer bonding mechanism needs to disassemble the cap 100, the first heating component 400 is used for heating, and the bonding strength between the cap 100 and the support 300 continues to decrease until the cap 100 and the support 300 are separated. Compared with the traditional in-situ unsealing method, the above-mentioned MEMS wafer bonding mechanism can more specifically achieve in-situ unsealing of the cap 100 and the support 300.

[0029] In one embodiment, the support member 300 is a support plate or a support seat.

[0030] Combination Figure 3 As shown, in one embodiment, the first heating component 400 includes a first heating member 410 and a second heating member 420, the first heating member 410 is circumferentially arranged on the support member 300 along one side of the bonding part close to the bonding portion 10, and the second heating member 420 is circumferentially arranged on the support member 300 along one side of the bonding part away from the bonding portion 10, and the first heating member 410 is provided with a first power terminal 411, the first power terminal 411 is located outside the support member 300, and the second heating member 420 is provided with a second power terminal 421, the second power terminal 421 is located outside the support member 300. Specifically, the first heating member 410 and the second heating member 420 can be resistance wires or electric heating wires. The first heating member 410 and the second heating member 420 are correspondingly installed at the bonding part of the cap member 100 and the support member 300, thereby effectively ensuring the heating efficiency of the heating component for the bonding part. Furthermore, the first heating element 410 and the second heating element 420 are designed correspondingly for the bonding part, so that the bonding between the cap member 100 and the support member 300 can be released while avoiding the heating component from affecting other components in the MEMS wafer bonding mechanism, for example: avoiding the heating component from affecting the bonding between the MEMS functional part 200 and the support member 300. Furthermore, the first power terminal 411 of the first heating element 410 is set outside the support member 300 and the second power terminal 421 of the second heating element 420 is set outside the support member 300, so that the first heating element 410 and the second heating element 420 are more convenient for power connection operation.

[0031] In one embodiment, the first heating assembly 400 includes a third heating element, which is buried in the support member 300 along the circumference of the bonding part, and the heating surface of the third heating element is opposite to the bottom of the bonding part, and the third heating element is provided with a third power terminal, and the third power terminal is located outside the support member 300. Specifically, the third heating element can be a resistance wire or an electric heating wire. The heating surface of the third heating element is opposite to the bottom of the bonding part, so that the heating efficiency of the third heating element for the bonding part can be effectively improved. Furthermore, the third power terminal of the third heating element is arranged outside the support member 300, so that it is more convenient for the third heating element to connect to the power.

[0032] In one embodiment, the MEMS wafer bonding mechanism further comprises a second heating assembly, the second heating assembly is provided with a bonding place between the MEMS functional part 200 and the support member 300, and the second heating assembly is provided with a fourth power terminal, and the fourth power terminal is located outside the support member 300. Specifically, the second heating assembly is a resistance wire or an electric heating wire. When inspecting the MEMS wafer bonding mechanism, in addition to releasing the bonding between the cap member 100 and the support member 300, sometimes it is also necessary to release the bonding place between the corresponding MEMS functional part 200 and the support member 300. At this time, the bonding place 30 between the MEMS functional part 200 and the support member 300 is heated by the second heating assembly, so that the bonding between the MEMS functional part 200 and the support member 300 can be released. Further, the fourth power terminal of the second heating assembly is arranged outside the support member 300, so that it is more convenient for the second heating assembly to perform the power connection operation.

[0033] Combination Figure 4 As shown, in one embodiment, an in-situ desealing method for MEMS wafer bonding, using the MEMS wafer bonding mechanism, comprises the following steps:

[0034] S100, determining a bonding point between the cap member 100 and the support member 300, and installing the first heating assembly 400 at the bonding point;

[0035] S200, when the cap member 100 needs to be unsealed in situ, the first heating component 400 is heated;

[0036] S300, after the first heating component 400 is heated for a preset time, the temperature of the bonding point between the cap member 100 and the support member 300 reaches an unsealed state;

[0037] S400, unsealing and disassembling the cap member 100.

[0038] When the above-mentioned in-situ unsealing method of MEMS wafer bonding is used, the connection between the cap member 100 and the support member 300 is achieved by bonding (a technique of directly combining under certain conditions, bonding the wafers into one body through van der Waals force, molecular force or atomic force). After the cap member 100 and the support member 300 are bonded, the bonding position of the cap member 100 and the support member 300 is determined, and the first heating component 400 can be installed on the side of the bonding position of the cap member 100 and the support member 300, or the first heating component 400 can be buried at the bottom of the bonding position of the cap member 100 and the support member 300. Because the bonding strength between the cap member 100 and the support member 300 decreases at high temperatures to achieve unsealing, therefore, when the MEMS wafer bonding mechanism needs to unseal the cap member 100 in situ, the first heating component 400 is used for heating, and the bonding strength between the cap member 100 and the support member 300 continues to decrease until the cap member 100 and the support member 300 are separated. Compared with the traditional in situ unsealing method, the above-mentioned in situ unsealing method of MEMS wafer bonding can achieve the in situ unsealing of the cap member 100 and the support member 300 in a more targeted manner.

[0039] Combination Figures 1 to 4 As shown, in one embodiment, in the step of determining the bonding place between the cap member 100 and the support member 300 and installing the first heating component 400 at the bonding place, the first heating component 400 is arranged on the support member 300 along the circumference of the bonding place, and the power connection terminal of the first heating component 400 is located outside the support member 300. Specifically, the first heating component 400 is a resistance wire or an electric heating wire. The first heating component 400 can be located at the side of the bonding place, that is, the first heating component 410 heats from the side of the bonding place. Or the first heating component 400 is located at the bottom of the bonding place, that is, the first heating component 410 heats from the bottom of the bonding place. Further, the power connection terminal of the first heating component 400 is arranged outside the support member 300, so as to make it easier for the first heating component 400 to perform the power connection operation.

[0040] In one embodiment, in the step where the first heating component 400 is disposed on the support member 300 along the circumference of the bonding portion, and the electrical terminals of the first heating component 400 are located outside the support member 300, the resistivity of the first heating component 400 is increased by adding a semiconductor inside the first heating component 400. Specifically, the above-mentioned embodiment can achieve more efficient heating of the first heating component 400 and shorten the time for releasing the bonding between the cap member 100 and the support member 300.

[0041] Combination Figures 1 to 4As shown, in one embodiment, in the step where the first heating component 400 is arranged on the support member 300 along the circumference of the bonding part, and the electrical terminal of the first heating component 400 is located outside the support member 300, the first heating component 400 may be multiple, and the first heating component 400 is provided in both the inner ring area and the outer ring area of ​​the bonding part, and the first heating component 400 located in the inner ring area of ​​the bonding part and the first heating component 400 located in the outer ring area of ​​the bonding part are both provided with two electrical terminals. Specifically, the first heating component 400 located in the inner ring area of ​​the bonding part is spaced from the bonding part by a first preset interval, and the first heating component 400 located in the outer ring area of ​​the bonding part is spaced from the bonding part by a second preset interval. The preset interval and the second preset interval can prevent the first heating component 400 from causing damage to the cap member 100 itself. At the same time, the first preset interval and the second preset interval are set to 100um, so that the heat transfer efficiency of the first heating component 400 to the bonding part can be effectively guaranteed. Furthermore, the first heating assembly 400 located in the inner ring area of ​​the bonding part and the first heating assembly 400 located in the outer ring area of ​​the bonding part are both provided with two electrical terminals. The above embodiment can more effectively withstand the voltage applied by the external circuit.

[0042] In one embodiment, when the cap member 100 needs to be unsealed in situ, in the step of heating the first heating component 400; the MEMS wafer bonding mechanism also includes a disassembly rod and an adhesive, and the disassembly rod body is bonded and matched with the cap member 100 through the adhesive. In the step of unsealing and disassembling the cap member 100; the cap member 100 is taken out through the disassembly rod body. Specifically, considering that the space for taking the cap member 100 out of the MEMS wafer bonding mechanism is limited, when the cap member 100 is removed, the disassembly rod member is first bonded and matched with the cap member 100 using an adhesive, and after the cap member 100 and the support member 300 are unsealed, the cap member 100 is taken out of the MEMS wafer bonding mechanism through the disassembly rod body. The above-mentioned embodiment makes the disassembly of the cap member 100 more convenient, and also prevents the cap member 100 from causing damage to the MEMS wafer bonding mechanism during disassembly.

[0043] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0044] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A MEMS wafer bonding and unsealing mechanism, characterized in that: The MEMS wafer bonding and unsealing mechanism includes: a cap member, a MEMS functional part, a support member and a first heating component, the cap member is bonded to the support member, and the cap member and the support member cooperate to form a bonding portion, the MEMS functional part is bonded to the bonding portion, the first heating component is installed on the support member, and the first heating component is used to heat the bonding portion between the cap member and the support member when the cap member needs to be unsealed in situ.

2. The MEMS wafer bonding and unsealing mechanism according to claim 1, characterized in that: The first heating component includes a first heating element and a second heating element, the first heating element is circumferentially arranged on the support element along a side of the bonding point close to the bonding portion, and a first power terminal is provided on the first heating element, and the first power terminal is located outside the support element, the second heating element is circumferentially arranged on the support element along a side of the bonding point away from the bonding portion, and a second power terminal is provided on the second heating element of the support element, and the second power terminal is located outside the support element.

3. The MEMS wafer bonding and unsealing mechanism according to claim 2, characterized in that: The first heating assembly includes a third heating element, which is buried in the support member along the circumference of the bonding point, and the heating surface of the third heating element is opposite to the bottom of the bonding point. The third heating element is provided with a third power terminal, and the third power terminal is located outside the support member.

4. The MEMS wafer bonding and unsealing mechanism according to claim 2, characterized in that: The MEMS wafer bonding mechanism also includes a second heating component, which is provided with a bonding point between the MEMS functional part and the support member. The second heating component is provided with a fourth power terminal, which is located outside the support member.

5. An in-situ decapsulation method for MEMS wafer bonding, characterized in that: The MEMS wafer bonding mechanism according to claim 1 comprises the following steps: Determine a bonding point between the cap member and the support member, and install the first heating component at the bonding point; When the cap member needs to be unsealed in situ, the first heating component is heated; After the first heating component is heated for a preset time, the temperature of the bonding point between the cap member and the support member reaches an unsealed state; The cap member is unsealed and disassembled.

6. The in-situ desealing method for MEMS wafer bonding according to claim 5, characterized in that: In the step of determining the bonding point between the cap member and the support member and installing the first heating component at the bonding point, the first heating component is arranged on the support member along the circumference of the bonding point, and the power terminal of the first heating component is located outside the support member.

7. The in-situ desealing method for MEMS wafer bonding according to claim 6, characterized in that: In the step where the first heating component is disposed on the support member along the circumference of the bonding portion and the power terminals of the first heating component are located outside the support member, the resistivity of the first heating component is increased by adding a semiconductor in the first heating component.

8. The in-situ desealing method for MEMS wafer bonding according to claim 6, characterized in that: In the step where the first heating component is arranged on the support member along the circumference of the bonding part, and the power terminal of the first heating component is located outside the support member, there may be multiple first heating components, and both the inner ring area and the outer ring area of ​​the bonding part are provided with the first heating components, and the first heating component located in the inner ring area of ​​the bonding part and the first heating component located in the outer ring area of ​​the bonding part are both provided with two power terminals.

9. The in-situ desealing method for MEMS wafer bonding according to claim 6, characterized in that: When the cap member needs to be unsealed in situ, the first heating component is heated; the MEMS wafer bonding mechanism also includes a disassembly rod and an adhesive member, and the disassembly rod is bonded to the cap member through the adhesive member.

10. The in-situ desealing method for MEMS wafer bonding according to claim 9, characterized in that: In the step of unsealing and disassembling the cap member, the cap member is taken out through the disassembly rod.

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