Domain wall moving element and magnetic array

By employing a ferromagnetic layer containing Co and Fe in the domain wall moving element and using an intercalation layer to enhance vertical magnetic anisotropy, combined with a conductive layer and a switching element to control current flow, the problems of insufficient MR ratio and domain wall control in the prior art are solved, and efficient multi-state representation is achieved.

CN114373780BActive Publication Date: 2026-07-03TDK CORP
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Patent Information

Application Number
CN202111146579.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-08-24
Filing Date
2021-09-28
Publication Date
2026-07-03
Estimated Expiration
2041-09-28

AI Technical Summary

Technical Problem

Existing magnetic domain wall moving elements cannot simultaneously achieve high MR ratio and high magnetic domain wall controllability, resulting in difficulty in stably reflecting multiple states in terms of resistance change amplitude.

Method used

The magnetoresistive effect element structure includes a reference layer, a non-magnetic layer, a magnetic domain wall moving layer, and first and second magnetization fixing layers. It uses a ferromagnetic layer containing Co and Fe and enhances the vertical magnetic anisotropy through an insertion layer. It combines a conductive layer and a switching element to control the current flow.

Benefits of technology

It achieves high MR ratio and high domain wall controllability, and can stably reflect multiple states in terms of resistance variation amplitude, thus improving the performance of the domain wall moving element.

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Abstract

This invention provides a domain wall moving element and magnetic array with a high MR ratio and high domain wall controllability. The domain wall moving element of this embodiment includes: a magnetoresistive element having, sequentially from the side closest to the substrate, a reference layer, a non-magnetic layer, and a domain wall moving layer; a first magnetization fixing layer and a second magnetization fixing layer, respectively connected to and separated from the domain wall moving layer; the domain wall moving layer includes a ferromagnetic layer comprising multiple intercalation layers, the ferromagnetic layer containing Co and Fe, and having perpendicular magnetic anisotropy; during writing, a writing current flows along the domain wall moving layer between the first magnetization fixing layer and the second magnetization fixing layer.
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