Evaporation mask unit and method for manufacturing the same

Abstract

The present invention provides a vapor deposition mask unit and a method for manufacturing the same, and its purpose is to provide a vapor deposition mask unit having a plurality of precisely arranged openings and a method for manufacturing the same. The vapor deposition mask unit includes a first metal layer, a second metal layer, and a frame on the first metal layer. The first metal layer has a plurality of first openings. The second metal layer is located on the first metal layer, in contact with the first metal layer, and has a plurality of second openings. The frame is located on the first metal layer. A portion of the frame extends in an area between two adjacent first openings and between two adjacent second openings, and overlaps with the first metal layer in the area. At least one of the plurality of first openings overlaps with one of the plurality of second openings.

Description

Technical Field

[0001] One embodiment of the present invention relates to a vapor deposition mask unit and a method for manufacturing the same. Background Art

[0002] Semiconductor elements such as display elements and memory elements are structures composed of thin films containing various materials such as insulators, semiconductors, and conductors stacked on insulating substrates and semiconductor substrates. These thin films are appropriately patterned and connected to explore the function of semiconductor elements. As one of the methods for forming thin films, vacuum evaporation can be cited. In this method, the material is heated under high vacuum to sublimate or evaporate the material (hereinafter, sublimation and evaporation are collectively referred to as gasification) to generate the vapor of the material. At this time, a vapor deposition mask is used to selectively deposit the material in the area where the thin film is formed (hereinafter referred to as the vapor deposition area). The vapor deposition mask has a plurality of openings for allowing the vapor of the material to pass through. By performing vapor deposition in a state where the opening overlaps the vapor deposition area, the vapor of the material can be selectively solidified and deposited on the vapor deposition area (see patent document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-210633 Summary of the invention

[0006] Problems to be solved by the invention

[0007] An object of one embodiment of the present invention is to provide a vapor deposition mask unit and a method for manufacturing the same. For example, an object of one embodiment of the present invention is to provide a vapor deposition mask unit having a plurality of precisely arranged openings and a method for manufacturing the same.

[0008] Methods for solving problems

[0009] One embodiment of the present invention is a vapor deposition mask unit. The vapor deposition mask unit includes a first metal layer, a second metal layer, and a frame on the first metal layer. The first metal layer has a plurality of first openings. The second metal layer is located on the first metal layer, in contact with the first metal layer, and has a plurality of second openings. The frame is located on the first metal layer. A portion of the frame extends in an area between two adjacent first openings and between two adjacent second openings, and overlaps with the first metal layer in the area. At least one of the plurality of first openings overlaps with one of the plurality of second openings.

[0010] One embodiment of the present invention is a method for manufacturing a vapor deposition mask unit. The manufacturing method includes: forming a first metal layer on a supporting substrate; disposing a frame on the first metal layer; forming a second metal layer having a plurality of second openings on the first metal layer; peeling the supporting substrate from the first metal layer; and forming a plurality of first openings in the first metal layer by irradiating the first metal layer with a laser from the side opposite to the second metal layer. The plurality of first openings are formed in such a manner that at least one of the plurality of first openings overlaps with one of the plurality of second openings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1A It is a schematic top view of a vapor deposition device to which the vapor deposition mask unit according to one embodiment of the present invention can be applied.

[0012] Figure 1B This is a schematic side view of a vapor deposition device to which the vapor deposition mask unit according to one embodiment of the present invention can be applied.

[0013] Figure 2 It is a schematic top view of a vapor deposition mask unit according to one embodiment of the present invention.

[0014] Figure 3 It is a schematic top view of a vapor deposition mask unit according to one embodiment of the present invention.

[0015] Figure 4A This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0016] Figure 4B This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0017] Figure 5A It is a schematic top view of a vapor deposition mask unit according to one embodiment of the present invention.

[0018] Figure 5B This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0019] Figure 5C This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0020] Fig. 6A This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0021] Figure 6B This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0022] Fig. 7AThis is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0023] Figure 7B This is a schematic cross-sectional view of a vapor deposition mask unit according to one embodiment of the present invention.

[0024] Fig. 8A This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0025] Figure 8B This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0026] Figure 8C This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0027] Fig.9A This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0028] Fig. 9B This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0029] Fig. 9C This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0030] Fig.9D This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0031] Fig. 10A This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0032] Fig. 10B This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0033] Fig. 10C This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0034] Fig.11A This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0035] Fig. 11B This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0036] Fig. 11C This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0037] Fig.11D This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0038] Fig. 12A This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0039] Fig. 12B This is a schematic cross-sectional view showing a method of manufacturing a vapor deposition mask unit according to one embodiment of the present invention.

[0040] Description of Reference Numerals

[0041] 100: Evaporation mask unit

[0042] 110: Evaporation mask

[0043] 112: 1st metal layer

[0044] 112a: Opening 1

[0045] 113: Step Difference

[0046] 114: 2nd metal layer

[0047] 114a: Second opening

[0048] 120: Frame

[0049] 120a: Outer frame

[0050] 120b: Inner frame

[0051] 122: Adhesive layer

[0052] 130: Peeling layer

[0053] 140: Support base plate

[0054] 142: Resist mask

[0055] 144: Magnet

[0056] 150: Evaporation chamber

[0057] 152: Loading lock door

[0058] 154: Evaporation source

[0059] 156: Shutter

[0060] 158: Mobile mechanism

[0061] 160: Retaining parts

[0062] 170: Substrate DETAILED DESCRIPTION

[0063] Hereinafter, various embodiments of the present invention will be described with reference to the drawings, etc. However, the present invention can be implemented in various forms within the scope not departing from the gist thereof, and should not be interpreted as being limited to the description of the embodiments illustrated below.

[0064] The accompanying drawings are for the purpose of making the description clearer, so there are cases where the width, thickness, shape, etc. of each part are schematically shown compared to the actual method, but it is only an example and does not limit the interpretation of the present invention. In this specification and each figure, the same figure mark is marked for the elements having the same functions as those described in the drawings shown, and repeated description is omitted.

[0065] Within the scope of this specification and the claims, when expressing the situation of configuring other structures on a structure, when it is simply recorded as "on...", unless otherwise specifically prohibited, it includes two situations: the situation of configuring other structures directly above a structure in a manner of being connected to the structure, and the situation of configuring other structures above a structure and separated by another structure.

[0066] Hereinafter, the expression “one structure is exposed from another structure” means a case where a part of one structure is not covered by another structure, and also includes a case where the part not covered by the other structure is covered by another structure.

[0067] Hereinafter, a vapor deposition mask unit 100 and a method for manufacturing the same according to an embodiment of the present invention will be described.

[0068] 1. Evaporation device

[0069] The vapor deposition mask unit 100 can be used to selectively form a film in a vapor deposition region when forming a film of a metal, an organic compound, an inorganic compound, or a mixture thereof by vapor deposition. Figure 1A and Figure 1B The top view and side view of a typical vapor deposition device used in forming a vapor deposition film are shown. The vapor deposition device is composed of a plurality of chambers having various functions. A chamber is Figure 1A The evaporation chamber 150 shown is separated from the adjacent chamber by a loading lock door 152, and is configured in such a way that the interior is maintained in a high vacuum reduced pressure state or a state filled with an inert gas such as nitrogen or argon. Therefore, a decompression device and a gas suction and exhaust mechanism, etc., not shown in the figure, are connected to the evaporation chamber 150.

[0070] The evaporation chamber 150 provides a space for storing film-forming objects such as substrates. Figure 1A , Figure 1B In the example shown, the evaporation source 154 is arranged under the substrate 170, and the evaporation material is filled in the evaporation source 154. The material is heated and vaporized in the evaporation source 154, and the vapor of the material reaches the surface of the substrate 170 through the opening (described later) of the evaporation mask unit 100, and is cooled and solidified, and the material is deposited on the substrate 170 (in Figure 1B A film of material is formed on the lower surface of the substrate 170. Figure 1A In the example shown, a vapor deposition source 154 (also referred to as a line source) having a substantially linear shape and arranged along one side of the substrate 170 is provided, but the vapor deposition source 154 can be of any shape, and can also be a vapor deposition source 154 called a point source that overlaps with the center of gravity of the substrate 170. In the case of a point source, the relative positions of the substrate 170 and the vapor deposition source 154 are fixed, and a mechanism for rotating the substrate 170 can also be provided.

[0071] When a linear type vapor deposition source 154 is used, the vapor deposition chamber 150 is configured so that the substrate 170 and the vapor deposition source 154 can move relative to each other. Figure 1A In the example, the evaporation source 154 is fixed and the substrate 170 moves thereon. Figure 1B As shown, the evaporation chamber 150 is further provided with a holder 160 for holding the substrate 170 and the evaporation mask unit 100, a moving mechanism 158 for moving the holder 160, a shield 156, etc. The holder 160 can maintain the mutual positional relationship between the substrate 170 and the evaporation mask unit 100, and the moving mechanism 158 moves the substrate 170 and the evaporation mask unit 100 on the evaporation source 154. The shield 156 is provided on the evaporation source 154 to shield or allow the vapor of the material to reach the substrate 170, and its opening and closing is controlled by a control device not shown in the figure. Although not shown in the figure, the evaporation chamber 150 is provided with a sensor for monitoring the evaporation speed of the material, a protective plate for preventing contamination caused by the material, a pressure gauge for monitoring the pressure in the evaporation chamber 150, etc.

[0072] 2. Evaporation mask unit

[0073] Figure 2 A schematic top view of the evaporation mask unit 100 is shown, Figure 3 Figure 2 A magnified view of a portion of Figure 4A and Figure 4B Indicates along Figure 2 The dotted line AA′ and Figure 3As shown in these figures, the evaporation mask unit 100 includes, as a basic structure, an evaporation mask 110 and a frame 120 disposed on the evaporation mask 110. The evaporation mask 110 includes a first metal layer 112 and a second metal layer 114 ( Figure 4A , Figure 4B ).

[0074] 2-1. First metal layer

[0075] The first metal layer 112 has a plurality of openings (hereinafter referred to as the first opening) 112a. The first opening 112a is an opening that determines the evaporation area, and the material passing through the first opening 112a is solidified and deposited on a film-forming object such as a substrate, thereby forming a thin film of the material. The thickness of the first metal layer 112 is appropriately selected, for example, from a range of 0.5 μm to 10 μm, 1 μm to 5 μm, or 1 μm to 3 μm. The first metal layer 112 contains a metal selected from zero-valent metals such as nickel and iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals. The first metal layer 112 may further contain carbon. The first metal layer 112 may be a single-layer structure or may be composed of a plurality of layers containing different materials. For example, the first metal layer 112 may also have a stacked structure of a layer containing titanium and a layer containing nickel.

[0076] 2-2. Second metal layer

[0077] The second metal layer 114 also has a plurality of openings (hereinafter referred to as second openings) 114a. Figures 3 to 4B In the example shown, a first opening 112a is provided for a second opening 114a, and the first opening 112a and the second opening 114a are arranged in such a manner that the first opening 112a and the second opening 114a overlap each other. The area of ​​the first opening 112a may be smaller than the area of ​​the second opening 114a, and the area of ​​each of the plurality of first openings 112a may be smaller than the area of ​​any of the second openings 114a. Therefore, a second opening 114a at least surrounds at least one or all of the sides constituting a first opening 112a. In other words, the first opening 112a completely overlaps with the second opening 114a. Therefore, a portion of the first metal layer 112 is exposed from the second opening 114a, and a step difference 113 exists between the first metal layer 112 and the second metal layer 114 (FIG. 4B).

[0078] The number of the first opening 112a and the second opening 114a is not necessarily the same, and the former may be greater than the latter. Figure 5A The top view schematic diagram of the evaporation mask unit 100 and Figure 5ASchematic diagram of the cross section along the dot-dash line CC′, DD′ ( Figure 5B , Figure 5C ), a plurality of first openings 112a are provided for one second opening 114a, and the first opening 112a and the second opening 114a are arranged in such a manner that one second opening 114a overlaps with the plurality of first openings 112a. The number of first openings 112a overlapping with one second opening 114a may be two or more.

[0079] The thickness of the second metal layer 114 may be the same as or greater than the thickness of the first metal layer 112, for example, from 5 μm to 200 μm, from 5 μm to 100 μm, or may be appropriately selected from the range of from 10 μm to 100 μm. By forming the second metal layer 114 with a thickness much greater than that of the first metal layer 112, it is possible to prevent the warping of the first metal layer 112 and the position change of the first opening 112a caused thereby, and to more precisely configure the first opening 112a on the vapor deposition area. The second metal layer 114 also contains a metal selected from zero-valent metals such as nickel and iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals, and may further contain carbon. The composition of the first metal layer 112 and the second metal layer 114 may be the same or different.

[0080] 2-3. Framework

[0081] like Figure 4A , Figure 4B As shown, the frame 120 is arranged in a manner connected to the second metal layer 114, thereby the evaporation mask 110 is fixed to the frame 120. The frame 120 has the function of providing strength for preventing the evaporation mask 110 from being deformed. The frame 120 is used to maintain the shape of the evaporation mask 110, and the warping of the evaporation mask 110 and the position change of the first opening 112a and the second opening 114a caused by it are prevented. As a result, the first opening 112a and the second opening 114a can be precisely arranged in a manner overlapping with the evaporation area. The frame 120 also contains a zero-valent metal, and the metal is selected from nickel, iron, cobalt, chromium, manganese, etc. For example, the frame 120 can be an alloy containing iron and chromium, an alloy containing iron, nickel and manganese, or carbon can be contained in the alloy. The thickness of the frame 120 can also be greater than the first metal layer 112 and the second metal layer 114, for example, it can be appropriately selected from the range of 0.5 mm to 1 cm or 1 mm to 5 mm.

[0082] like Figure 2 As shown, the frame 120 includes an outer frame 120a surrounding all of the first openings 112a and the second openings 114a. The outer frame 120a is disposed along the outer circumference of the deposition mask 110 (FIG. 4A).

[0083] As an arbitrary structure, the frame 120 may include an inner frame 120b integrated with the outer frame 120a (see Figure 2 The inner frame 120b, which is a part of the frame 120, is provided so as to extend in the region between the adjacent first openings 112a and between the adjacent second openings 114a. Figure 4B ). The inner frame 120b is surrounded by the outer frame 120a, and the area surrounded by the outer frame 120a is divided into a plurality of areas (windows). The strength of the outer frame 120a is increased by this structure, which helps to prevent deformation of the evaporation mask unit 100. In the case of evaporation on a large substrate, the length of one side of the outer frame 120a sometimes exceeds 3m. Therefore, by providing the inner frame 120b, the warping of the evaporation mask unit 100 can be effectively prevented, and the first opening 112a and the second opening 114a can be precisely configured on the evaporation area on the large substrate.

[0084] like Figure 4A , Figure 4B As shown in FIG. 1 , the frame 120 can be provided in a manner overlapping the first metal layer 112 and the second metal layer 114. That is, the frame 120 can be arranged in a manner such that the second metal layer 114 is sandwiched between the first metal layer 112 and the frame 120. In this case, the entire bottom surface of the inner frame 120b can also overlap the first metal layer 112 and the second metal layer 114.

[0085] Or you can Fig. 6A , Figure 6B As shown in FIG. 1 , the frame 120 is in contact with the first metal layer 112. In this case, the frame 120 may be arranged so that the entire bottom surface of the inner frame 120b overlaps with the first metal layer 112. The second metal layer 114 is provided in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120. In other words, the bottom surface and the side surface of the frame 120 are in contact with the first metal layer 112 and the second metal layer 114, respectively.

[0086] Or you can Fig. 7A , Figure 7BAs shown in the figure, between the frame 120 and the first metal layer 112, an adhesive layer 122 is provided to be in contact with them. The adhesive layer 122 can contain, for example, a light-curing or heat-curing acrylic adhesive, an epoxy adhesive, etc. In this case, the frame 120 can also be arranged in a manner that the entire bottom surface of the inner frame 120b overlaps with the first metal layer 112. In addition, the second metal layer 114 is provided in a manner that is in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120. The side surface of the adhesive layer 122 can also be in contact with the second metal layer 114, thereby, a structure in which the adhesive layer 122 is sealed by the first metal layer 112, the second metal layer 114 and the frame 120, and the adhesive layer 122 is not exposed to the outside can be obtained. The adhesive layer 122 is sealed, and it is possible to prevent the adhesive layer 122 from swelling with a cleaning liquid such as an organic solvent or water when the vapor deposition mask unit 100 is cleaned, thereby preventing the volume change and the decrease in adhesive force caused by swelling. Therefore, it is possible to prevent the shape of the vapor deposition mask unit 100 and the configuration of the first opening 112a and the second opening 114a from changing. In addition, it is possible to prevent the adhesive layer 122 from dissolving, and thus it is possible to prevent the vapor deposition mask unit 100 from being contaminated.

[0087] When the evaporation mask unit 100 is used for evaporation, the evaporation mask unit 100 and the film-forming object are arranged in such a manner that the evaporation area overlaps with the first opening 112a. The evaporation mask unit 100 is arranged in such a manner that the first metal layer 112 is closer to the film-forming object than the second metal layer 114. The vapor of the material passes through the second opening 114a and the first opening 112a in sequence, and the material is deposited on the evaporation area. In the case where a plurality of pixels arranged in the display area of ​​the display device are respectively film-formed by evaporation, the evaporation mask unit 100 is arranged in such a manner that the plurality of first openings 112a overlap with the pixel electrodes of the display device. As described later, the first opening 112a of the evaporation mask 110 can be precisely arranged at a position corresponding to the target evaporation area. Therefore, even when a plurality of evaporation areas are arranged at very small intervals, film formation can be selectively performed on the evaporation area. This helps to improve the manufacturing yield of electronic devices manufactured by evaporation processes such as organic electroluminescent display devices, and can reduce the manufacturing cost of electronic devices.

[0088] 3. Method for manufacturing a vapor deposition mask unit

[0089] use FIG. 8A to FIG. 12B An example of a method for manufacturing the vapor deposition mask unit 100 is described. These figures are schematic cross-sectional views of the vapor deposition mask unit 100, corresponding to Figure 4B .

[0090] 3-1. Formation of evaporation mask

[0091] First, a first metal layer 112 ( Fig. 8A ). As the insulating support substrate 140, a glass substrate, a quartz substrate, or a polyimide or polyamide, a polycarbonate, or a plastic substrate containing polyester fibers such as polyethylene terephthalate, etc. can be listed. It is preferable to use a material with a high transmittance to the laser described later. No resist mask is formed on the support substrate 140, and the first metal layer 112 is formed on the entire surface or substantially the entire surface of the support substrate 140 using a sputtering method, a chemical vapor deposition (CVD) method, or a plating method (electrolytic plating method, electroless plating method) or the like. In the case of using an electrolytic plating method, a seed layer containing a metal such as titanium, nickel, chromium, copper, gold, or an alloy thereof can also be formed using a sputtering method or a CVD method, and then the first metal layer 112 is formed by supplying electricity to the seed layer in a plating solution. As a plating solution, an aqueous electrolyte solution containing a nickel salt such as nickel sulfate or nickel chloride can be used.

[0092] Thereafter, the second metal layer 114 is formed. An example of a method for forming the second metal layer 114 includes forming a resist mask 142 ( Figure 8B ), and then, supplying power to the first metal layer 112 in the plating solution to grow the second metal layer 114 by electrolytic plating ( Figure 8C ). The formation of the resist mask 142 can be carried out by applying a photosensitive resist using ordinary photolithography, exposing with a photomask to complete curing, and developing. The resist mask 142 is exposed through a photomask, for example, by applying a negative resist on the first metal layer 112, selectively exposing the area to form the second opening 114a. Alternatively, a positive resist is applied on the peeling layer 130, and the non-opening portion is selectively exposed, and exposed with the help of a photomask. Thereafter, development is performed to obtain a patterned resist mask 142. The resist can be in a liquid state, or a thin film photoresist called a resist film can be used. In addition, the thickness of the resist mask 142 is preferably greater than the thickness of the second metal layer 114.

[0093] After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripping solution or / and ashing. Thus, the second metal layer 114 ( Figure 8C Although not shown in the figure, a metal layer without a pattern may be formed on the first metal layer 112 by sputtering or CVD, and the metal layer may be patterned by photolithography to form the second metal layer 114.

[0094] 3-2. Frame configuration and fixing

[0095] Afterwards, if Fig.9A The frame 120 is arranged as shown in FIG. 1. The frame 120 is arranged in such a manner as to be in contact with the second metal layer 114 and in such a manner that the inner frame 120b extends from the region between the adjacent second openings 114a. Then, the support substrate 140 irradiates the first metal layer 112 with laser light (see FIG. 1 ). Fig.9A ). Specifically, the laser is irradiated to the area where the inner frame 120b overlaps with the first metal layer 112 through the support substrate 140. The type of laser is not limited, and lasers oscillated from lasers such as YAG lasers, fiber lasers, semiconductor lasers, carbon dioxide lasers, helium-neon lasers, excimer lasers, and argon lasers can be used. The shape of the laser beam is also not limited, and it can also have a two-dimensional shape such as a point, a line, or a circle and a quadrilateral. Through the heat given by the laser, the second metal layer 114 and the frame 120 are welded (laser welding) and fixed to each other.

[0096] Next, the support substrate 140 is peeled off from the first metal layer 112 ( Fig. 9B ). The peeling of the supporting substrate 140 can be performed physically or chemically. In the latter case, a glass substrate is used as the supporting substrate 140, and a resist with high resistance to hydrofluoric acid such as polyimide is used to protect the first metal layer 112, the second metal layer 114 and the frame 120, and the supporting substrate 140 is dissolved using hydrofluoric acid.

[0097] 3-3. Formation of the first opening

[0098] Then, the first metal layer 112 is irradiated with laser light to form a first opening 112a ( Fig. 9B ). Specifically, the first metal layer 112 is irradiated with a laser from the side opposite to the second metal layer 114, and a portion of the first metal layer 112 is removed by the energy of the laser (laser ablation). The type of laser is not limited, and lasers oscillated from lasers such as YAG lasers, fiber lasers, semiconductor lasers, carbon dioxide lasers, helium-neon lasers, excimer lasers, and argon lasers can be used. As described above, the first metal layer 112 is formed in a relatively small film thickness. Therefore, a portion of the first metal layer 112 can be quickly removed by irradiation with laser to form the first opening 112a ( Fig. 9C ). Laser ablation is performed by irradiating the desired area of ​​the first metal layer 112 with laser light from one or more laser emission ports, and the irradiation position is moved sequentially. ( Fig. 9C , Fig.9D ).

[0099] 3-4. Other methods for manufacturing a vapor deposition mask unit

[0100] The method for manufacturing the deposition mask unit 100 is not limited to the above method. For example, a metal substrate containing copper, aluminum, titanium, iron, nickel, cobalt, chromium, molybdenum, manganese, or an alloy containing a metal selected from these metals can be used as the support substrate 140. In this case, it is preferable to Fig. 10A As shown in FIG. 1 , a peeling layer 130 is formed on the support substrate 140. The peeling layer 130 is a functional layer for promoting the peeling of the vapor deposition mask unit 100 formed on the support substrate 140 from the support substrate 140, and a metal thin film such as nickel, molybdenum, or tungsten can be used. The peeling layer 130 can be formed in a thickness of 20 μm to 200 μm or 40 μm to 150 μm by plating, sputtering, or CVD, for example.

[0101] Next, without forming a resist mask on the support substrate 140, the first metal layer 112 ( Fig. 10B When electrolytic plating is used, the release layer 130 can be used as a seed layer, and the first metal layer 112 can be formed by supplying power to the release layer 130 in the plating solution. When the release layer 130 is not used, the first metal layer 112 can also be formed by supplying power to the support substrate 140.

[0102] Then, the frame 120 is arranged on the first metal layer 112. The frame 120 is arranged in contact with the first metal layer 112. At this time, a magnet 144 may be arranged under the support substrate 140. The magnet 144 can generate a magnetic force to stabilize the position of the frame 120 ( Fig. 10C ).

[0103] Next, the second metal layer 114 is formed. The method for forming the second metal layer 114 can be the same as the above method, including forming a resist mask 142 ( Fig.11A ), then, supplying power to the first metal layer 112 in the plating solution to grow the second metal layer 114 by electrolytic plating ( Fig. 11B The resist mask 142 can be formed by applying a photosensitive resist using ordinary photolithography, curing it with the help of exposure using a photomask, and developing it. At this time, the resist mask 142 can also be formed on the frame 120. This prevents the second metal layer 114 from being formed on the frame 120.

[0104] After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripping solution or / and ashing. Thus, the second metal layer 114 ( Fig. 11BAlthough not shown in the figure, a metal layer without a pattern may be formed on the first metal layer 112 by sputtering or CVD, and the metal layer may be patterned by photolithography to form the second metal layer 114.

[0105] The subsequent process is the same as the above process. That is, the support substrate 140 is peeled off from the first metal layer 112, and then the area where the first opening 112a is to be formed is laser ablated (FIG. 11C). Laser ablation is performed by irradiating the desired area of ​​the first metal layer 112 with laser light from one or more laser emission ports, and the irradiation position is moved sequentially ( Fig. 11C ). Through the above process, it is possible to manufacture Fig. 6A and Figure 6B The evaporation mask unit 100 has the structure shown.

[0106] In addition, when the adhesive layer 122 is used, a glass substrate, a quartz substrate or a plastic substrate is used as the support substrate 140, and the first metal layer 112 is formed on the support substrate 140 (FIG. 8A), and then an adhesive for forming the adhesive layer 122 is applied to the first metal layer 112, and the frame 120 is set thereon ( Fig. 12A On the other hand, when a metal substrate is used as the support substrate 140, after the peeling layer 130 and the first metal layer 112 are sequentially formed on the support substrate 140 ( Fig. 10B ), apply adhesive to the first metal layer 112, and set the frame 120 thereon ( Fig. 12B ). The subsequent processes are the same as the above-mentioned processes, and include forming the resist mask 142, forming the second metal layer 114, removing the resist mask 142, peeling off the support substrate 140 and the peeling layer 130, and ablating the first opening 112a by laser.

[0107] As described above, in the manufacturing method of the vapor deposition mask unit 100 according to one embodiment of the present invention, after the vapor deposition mask 110 and the frame 120 are fixed, before the first opening 112a arranged in a manner corresponding to the vapor deposition area is formed, the support substrate 140 is peeled off from the vapor deposition mask unit 100. When the support substrate 140 is peeled off, a physical force is applied to the vapor deposition mask 110 and the frame 120, so that the vapor deposition mask unit 100 after peeling, especially the vapor deposition mask 110, may have stress caused by deformation caused by the applied force. However, even if such stress remains, since the first opening 112a is formed by laser ablation after the deformation of the vapor deposition mask 110, its position (coordinate) is not affected by the deformation during peeling, and is not changed by the residual stress. Therefore, the vapor deposition mask unit 100 according to one embodiment of the present invention can be provided with an opening precisely arranged at a position corresponding to the vapor deposition area, which helps to improve the film forming accuracy in the vapor deposition process. This is advantageous compared to the step of peeling off the support substrate after forming the openings defining the vapor deposition region (the first openings 112 in the vapor deposition mask unit 100). This is because if the vapor deposition mask 100 is deformed or residual stress occurs due to peeling off the support substrate after the openings are formed, the positions of the openings are changed, and the openings cannot be precisely arranged on the vapor deposition region.

[0108] In addition, the vapor deposition mask 110 of the vapor deposition mask unit 100 is a laminate of two metal layers (a first metal layer 112 and a second metal layer 114), and the vapor deposition mask 110 does not contain an organic compound such as a resin. Therefore, it is also possible to suppress the generation of foreign matter and defects caused by the decomposition of organic compounds due to laser irradiation when forming the first opening 112a.

[0109] As the above-mentioned embodiments of the present invention, as long as they are not contradictory, they can be appropriately combined to implement. In addition, based on the manufacturing method of each embodiment, the embodiments after the addition, omission or condition change of the process by those skilled in the art are appropriately carried out, as long as they have the gist of the present invention, they are also included in the scope of the present invention.

[0110] Even if there are other effects different from the effects brought about by the above-mentioned embodiments, effects that are clear from the description of this specification or that can be easily predicted by a person skilled in the art are naturally understood to be effects brought about by the present invention.

Claims

1. A vapor deposition mask unit, characterized in that: include: A first metal layer having a plurality of first openings; a second metal layer located on the first metal layer, in contact with the first metal layer, and having a plurality of second openings; and The frame on the first metal layer, One of the first openings is provided for one of the second openings, and the first opening and the second opening are arranged so that the first opening and the second opening overlap each other. A portion of the frame extends between two adjacent first openings and between two adjacent second openings, overlaps with the first metal layer in the region, a bottom surface of the frame contacts the first metal layer, a side surface of the frame contacts the second metal layer, and a thickness of the second metal layer is greater than or equal to a thickness of the first metal layer. An area of ​​each of the plurality of first openings is smaller than an area of ​​any of the plurality of second openings.

2. The evaporation mask unit according to claim 1, characterized in that: An adhesive layer is further provided between the first metal layer and the frame.

3. A method for manufacturing a vapor deposition mask unit, characterized in that: include: The step of forming a first metal layer on a supporting substrate; The step of configuring a frame on the first metal layer; forming a second metal layer having a plurality of second openings on the first metal layer; a step of peeling the support substrate from the first metal layer; and forming a plurality of first openings in the first metal layer by irradiating the first metal layer with laser light from a side opposite to the second metal layer, The frame is disposed before the second metal layer is formed so that the frame is in contact with the first metal layer. The second metal layer is formed in such a way that the second metal layer is in contact with the side surface of the frame and the first metal layer. The plurality of first openings are formed by providing one first opening for one second opening so that one first opening overlaps with one second opening. The thickness of the second metal layer is greater than the thickness of the first metal layer. The irradiation of the first metal layer with the laser beam is performed so that an area of ​​each of the plurality of first openings is smaller than an area of ​​any of the plurality of second openings.

4. The manufacturing method according to claim 3, characterized in that: The method further includes forming an adhesive layer on the first metal layer and in contact with the first metal layer. The frame is disposed after the adhesive layer is formed so that the adhesive layer is sandwiched between the first metal layer and the frame.

5. The manufacturing method according to claim 3, characterized in that: The formation of the first metal layer is performed by electrolytic plating.

6. The manufacturing method according to claim 3, characterized in that: The second metal layer is formed by electrolytic plating.

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