Crack arrest structure

Abstract

The application discloses a crack stopping structure, comprising: a first crack stopping line, comprising a first blocking line group and a second blocking line group arranged oppositely; wherein the first blocking line group and the second blocking line group each comprise a plurality of blocking lines; each blocking line comprises at least one interconnecting line in the vertical direction; the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group are arranged alternately in the same horizontal plane to form a curved channel extending from one side to the other side of the first crack stopping line between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group. The crack stopping structure of the application comprises two crack stopping lines, thereby forming double resistance to cracks; the first crack stopping line comprises the first blocking line group and the second blocking line group arranged oppositely, and the blocking lines of the first blocking line group and the blocking lines of the second blocking line group are arranged alternately, which can effectively prevent the cracks from extending forward and reduce the occurrence of chip breakage and the like.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and specifically to a crack stopping structure. Background Technology

[0002] As semiconductor device design becomes increasingly complex and sophisticated, the use of interconnects in these designs continues to increase. Furthermore, to reduce capacitance generated by BEOL (Biode-on-Layer) interconnects, the mechanical properties of the IMD (Integrated Device Mask) are weakened when using low-k materials. This often leads to chip breakage and other damage during the die-shaving process. Interconnect dimensions are being designed to be increasingly smaller, and interconnect density is being set higher and higher to achieve various advanced chip functions. To improve RC delay caused by narrower metal conductor spacing, low-k materials with low physical strength and low dielectric constant are increasingly being used. During the dicing and separation of individual chips from the wafer, chip damage due to cracking and breakage caused by the weakened film is becoming increasingly common. Summary of the Invention

[0003] The purpose of this application is to provide a crack-stopping structure. To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general description, nor is it intended to identify key / important components or to depict the scope of protection of these embodiments. Its sole purpose is to present some concepts in a simple form as a prelude to the detailed description that follows.

[0004] According to one aspect of the embodiments of this application, a crack stopping structure is provided, comprising:

[0005] The first crack stop line includes a first blocking line group and a second blocking line group that are relatively arranged opposite to each other.

[0006] The first blocking line group and the second blocking line group each include a plurality of blocking lines; each blocking line includes at least one interconnecting line in the vertical direction; the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group are staggered on the same horizontal plane to form a curved channel extending from one side of the first crack stop line to the other side between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group.

[0007] One aspect of the technical solution provided in this application embodiment may include the following beneficial effects:

[0008] The crack stopping structure provided in this application embodiment includes a first crack stopping line comprising a first blocking line group and a second blocking line group arranged opposite to each other. The blocking lines of the first blocking line group and the second blocking line group are staggered, which can effectively prevent the crack from extending and reduce the occurrence of chip breakage and other situations.

[0009] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description, or some features and advantages may be inferred from the description or determined without question, or may be learned by practicing embodiments of this application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the written description, claims, and drawings. Attached Figure Description

[0010] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 A schematic diagram of the crack-stopping structure of Embodiment 1 of this application is shown;

[0012] Figure 2 It shows the corresponding Figure 1 Another structural diagram from a different perspective;

[0013] Figure 3 The three-dimensional shape of the interconnect in Embodiment 1 is shown;

[0014] Figure 4 A schematic diagram of the crack-stopping structure of Embodiment 2 of this application is shown;

[0015] Figure 5 It shows the corresponding Figure 4 Another structural diagram from a different perspective;

[0016] Figure 6 Showing removal Figure 5 A schematic diagram of the structure following the two third interconnects;

[0017] Figure 7 A schematic diagram of the crack-stopping structure of Embodiment 3 of this application is shown;

[0018] Figure 8 It shows the corresponding Figure 7 Another structural diagram from a different perspective;

[0019] Figure 9 A schematic diagram of the crack-stopping structure of Embodiment 4 of this application is shown;

[0020] Figure 10 It shows the corresponding Figure 9 Another structural diagram from a different perspective;

[0021] Figure 11 A schematic diagram of the crack-stopping structure of Embodiment 5 of this application is shown;

[0022] Figure 12 A schematic diagram illustrating the principle of the crack-stopping structure in an embodiment of this application preventing crack propagation is shown. Detailed Implementation

[0023] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0024] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0025] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0026] Example 1

[0027] like Figure 1 and Figure 2 As shown, this embodiment provides a crack stopping structure, including a first crack stopping line 1, a second crack stopping line 2, and a top-layer interconnect line 6.

[0028] The tops of the first crack stop line 1 and the second crack stop line 2 are both connected to the bottom surface of the same top layer interconnect line 6.

[0029] The first crack stop line 1 is located on one side of the scribe lane area. The second crack stop line 2 is located on the side of the first crack stop line 1 that is away from the scribe lane area.

[0030] The first crack stop line 1 includes two blocking line groups arranged opposite each other, namely the first blocking line group and the second blocking line group. Each blocking line group includes several blocking lines with identical shapes and structures.

[0031] The first blocking line group includes a plurality of first blocking lines 1A, and the second blocking line group includes a plurality of second blocking lines 1B. The first blocking lines 1A of the first blocking line group and the second blocking lines 1B of the second blocking line group are arranged alternately. The first blocking lines 1A and the second blocking lines 1B have the same structure and shape.

[0032] Each blocking line includes four metal plugs arranged in a cross-stack configuration and three interconnecting lines. An interconnecting line is sandwiched between each pair of adjacent metal plugs, and adjacent interconnecting lines are connected by a metal plug.

[0033] The first blocking line 1A includes a first metal plug 1AV1, a first interconnect line 1AM1, a second metal plug 1AV2, a second interconnect line 1AM2, a third metal plug 1AV3, a third interconnect line 1AM3, and a fourth metal plug 1AV4, which are stacked sequentially from bottom to top.

[0034] The second blocking line 1B has the same structure as the first blocking line 1A, including a first metal plug 1BV1, a first interconnect line 1BM1, a second metal plug 1BV2, a second interconnect line 1BM2, a third metal plug 1BV3, a third interconnect line 1BM3, and a fourth metal plug 1BV4 stacked sequentially from bottom to top.

[0035] The first metal plug 1AV1 and the first metal plug 1BV1 are respectively connected to the active region 8 on the semiconductor substrate layer 7. Along Figure 2 The sectional structure obtained from A-A' is as follows Figure 1 As shown.

[0036] Each interconnect of the blocking line has a symmetrical structure, and each interconnect has a symmetrical plane perpendicular to the bottom surface of the top interconnect 6. The symmetrical plane can divide the interconnect into two mutually symmetrical parts. In this embodiment, the symmetrical planes of the three interconnects of the blocking line are the same plane.

[0037] The top view shape of the interconnect is as follows Figure 2 The shapes shown are in the form of "[" or "]". The three-dimensional shape of an interconnect is as follows: Figure 3 As shown. Each interconnect includes an integrally formed backplate 1-1 and two side plates 1-2. The two side plates 1-2 are located on both sides of the backplate 1-1 and are perpendicular to each other. The backplate 1-1 and the two side plates 1-2 together form a groove 1-3. The interconnect has a symmetrical structure with a plane of symmetry α, which divides the interconnect into two mirror-symmetrical parts.

[0038] The second crack stop line 2 includes four metal plugs and three interconnects stacked in a cross-layered manner, with an interconnect between each pair of adjacent metal plugs. Each interconnect is cuboid in shape. The second crack stop line 2 includes, from bottom to top, a first metal plug 2V1, a first interconnect 2M1, a second metal plug 2V2, a second interconnect 2M2, a third metal plug 2V3, a third interconnect 2M3, and a fourth metal plug 2V4. The first metal plug 2V1 of the second crack stop line 2 is connected to another active region 8 on the semiconductor substrate layer 7. For example... Figure 1 As shown, an intermetallic dielectric layer (IMD) 9 is filled between the top interconnect 6 and the semiconductor substrate 7. The first crack stop line 1 and the second crack stop line 2 are wrapped by the intermetallic dielectric layer (IMD) 9.

[0039] In this embodiment, all first blocking lines 1A and all second blocking lines 1B are staggered, and the side plates of two adjacent third interconnect lines 1AM3 extend into the groove of the same third interconnect line 1BM3. At the same time, the side plates of two adjacent third interconnect lines 1BM3 extend into the groove of the same third interconnect line 1AM3.

[0040] The second crack stop line 2 includes four metal plugs and three interconnecting lines arranged in a cross-layered manner, all of which are cuboid in shape.

[0041] like Figure 12 As shown, the semiconductor substrate 7 has a dicing channel region 4, a protective ring 3, and a circuit region 5. A crack C is generated in the dicing channel region 4. Crack C extends forward and first encounters a first crack stop line 1. The first crack stop line 1 forms the first line of defense against the crack, preventing its extension. A first blocking line group and a second blocking line group are staggered to form a curved channel T extending from one side of the first crack stop line 1 to the other side. The blocking lines prevent the crack C from advancing. If the crack C enters the curved channel T, it is very easy to differentiate into smaller cracks. Thus, the first crack stop line 1 plays the role of preventing and differentiating the crack C. When the first crack stop line 1 cannot prevent the crack C from advancing, the first and second blocking line groups can at least differentiate the crack C into smaller cracks. If the crack C extends through the gap of the first blocking line group, the second blocking line group continues to prevent the crack C from advancing. If the crack C then passes through the gap of the second blocking line group, the second crack stop line 2 acts as a second line of defense to prevent the crack C from continuing to extend. These two lines of defense effectively prevent the crack C from extending and reduce the occurrence of chip breakage and other issues.

[0042] Example 2

[0043] The plane of symmetry between the first and third interconnects of the blocking line is the same plane perpendicular to the bottom surface of the top interconnect 6, as shown below. Figures 4-6As shown, unlike Embodiment 1, the plane of symmetry of the second interconnect is not the same plane as the plane of symmetry of the first interconnect; the plane of symmetry of the second interconnect is parallel to the plane of symmetry of the first interconnect. Two adjacent third interconnects 1AM3 side plates extend into the groove of the same third interconnect 1BM3, and two adjacent third interconnects 1BM3 side plates extend into the groove of the same third interconnect 1AM3. Two adjacent second interconnects 1AM2 side plates extend into the groove of the same third interconnect 1BM2, and two adjacent third interconnects 1BM2 side plates extend into the groove of the same third interconnect 1AM2. Along... Figure 5 The sectional structure obtained from A-A' is as follows Figure 4 As shown.

[0044] Example 3

[0045] like Figure 7 and Figure 8 As shown, unlike Embodiment 1, both 1AM2 and 1BM2 are cuboid in shape, and 1AM2 and 1BM2 are connected as a single unit. All 1AM2 units are connected as a single unit, and all 1BM2 units are connected as a single unit, forming a single cuboid interconnect layer 1M2. The side plates of two adjacent third interconnects 1AM3 extend into the groove of the same third interconnect 1BM3. Simultaneously, the side plates of two adjacent third interconnects 1BM3 extend into the groove of the same third interconnect 1AM3. Along... Figure 8 The sectional structure obtained from A-A' is as follows Figure 7 As shown.

[0046] Example 4

[0047] like Figure 9 and Figure 10 As shown, based on Embodiment 2, but differing from Embodiment 2, the tops of the first crack stop line 1 and the second crack stop line 2 are respectively connected to the top layer interconnect line 6a and the top layer interconnect line 6b. The top layer interconnect lines 6a and 6b do not contact each other, and the top and bottom surfaces of the top layer interconnect line 6a and the top and bottom surfaces of the top layer interconnect line 6b are located on the same plane. Along Figure 10 The sectional structure obtained from A-A' is as follows Figure 9 As shown. Figure 9 As shown, an intermetallic dielectric layer (IMD) 9 is filled in the space below the top interconnects 6a and 6b and above the semiconductor substrate 7. The first crack stop line 1 and the second crack stop line 2 are wrapped by the intermetallic dielectric layer (IMD) 9.

[0048] Example 5

[0049] like Figure 11As shown, unlike the crack stopping structure provided in Embodiment 1, in the crack stopping structure provided in this embodiment, the first blocking line 1A includes an interconnect line 1AM and two metal plugs 1AV1 and 1AV2, the second blocking line 1B includes an interconnect line 1BM and two metal plugs 1BV1 and 1BV2, and the second crack stopping line 2 includes an interconnect line 2M and two metal plugs 2V1 and 2V2.

[0050] When a crack caused by cutting occurs, the crack mechanically extends straight ahead, initially blocked by the interconnecting wires of the first blocking line, which disperses additional force to the insulating film portion that is weaker than the interconnecting wires. Then, the force propelling the crack is again blocked in the second blocking line. Even if the crack passes through these two blocking lines, a second crack-stopping line can halt its extension.

[0051] In other embodiments, the width of the interconnects and the space between them are the minimum dimensions allowed by the manufacturing process. Except for the topmost interconnect, all other interconnects in the bent configuration can exist in the same horizontal position with the same configuration, connected to the upper and lower layers by metal plugs in a wiring configuration. Furthermore, the number of interconnects and metal plugs in the first blocking line, second blocking line, and second crack stop line can also be other numbers, not limited to those in the embodiments described above.

[0052] The crack stopping structure provided in this application includes two crack stopping lines, thereby forming a double blockage of the crack; the first crack stopping line includes a first blocking line group and a second blocking line group arranged opposite to each other, and the blocking lines of the first blocking line group and the blocking lines of the second blocking line group are staggered, which can effectively prevent the crack from extending and reduce the occurrence of chip breakage and other situations.

[0053] The above description does not provide detailed explanations of the technical aspects of each layer's patterning and etching. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in each embodiment cannot be advantageously combined. The technical solution of this application is not limited to these few embodiments, nor is it limited to these few metal lines; metal interconnect layers can be freely combined and added according to a set pattern in other embodiments.

[0054] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A crack-stopping structure, characterized in that, include: The first crack stop line includes a first blocking line group and a second blocking line group arranged opposite to each other; Wherein, both the first blocking line group and the second blocking line group include a plurality of blocking lines; each of the blocking lines includes at least one interconnecting line in the vertical direction; the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group are staggered on the same horizontal plane to form a curved channel extending from one side of the first crack stop line to the other side between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group. The blocking line includes a first metal plug, a first interconnecting line, a second metal plug, a second interconnecting line, a third metal plug, a third interconnecting line, and a fourth metal plug, which are stacked sequentially from bottom to top. The third interconnect has a symmetrical structure, including an integrally formed back plate and two side plates; the two side plates are located on both sides of the back plate and are perpendicular to each other; the back plate and the two side plates form a groove; each side plate of the first blocking line group extends into the corresponding groove of the second blocking line, and each side plate of the second blocking line group extends into the corresponding groove of the first blocking line. The crack-stopping structure also includes: The second crack stop line includes at least one interconnect line; Top-level interconnecting lines are provided at the top of both the first crack stop line and the second crack stop line; The bottom ends of the first crack stop line and the second crack stop line are both located on the same semiconductor substrate layer; The second crack stop line includes a plurality of metal plugs and a plurality of interconnecting lines arranged in a cross-layered manner; The top-level interconnect line at the top of the first crack stop line and the top-level interconnect line at the top of the second crack stop line are either the same top-level interconnect line or are independently configured top-level interconnect lines.

2. The crack-stopping structure according to claim 1, characterized in that, The structure of the second interconnect is the same as that of the third interconnect.

3. The crack-stopping structure according to claim 2, characterized in that, The plane of symmetry of the second interconnect line and the plane of symmetry of the third interconnect line are the same plane.

4. The crack-stopping structure according to claim 2, characterized in that, The plane of symmetry of the second interconnect is parallel to the plane of symmetry of the third interconnect.

5. The crack-stopping structure according to claim 1, characterized in that, All the second interconnecting lines of the first crack stop line form a single cuboid structure.

6. The crack-stopping structure according to claim 1, characterized in that, The structure of the first interconnect is the same as that of the third interconnect.

7. The crack-stopping structure according to claim 1, characterized in that, The metal plug and the interconnect layer of the second crack stop line are both cuboid in shape.

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