An all-optically pumped gas laser

Abstract

The application discloses a kind of all-optical pumping gas laser, including harmonic cavity, extreme ultraviolet laser system, auxiliary pumping semiconductor laser system and main pumping semiconductor laser system;Extreme ultraviolet laser system generates extreme ultraviolet laser, realizes extreme ultraviolet pumping process and generates laser metastable gas particles transition energy state, and auxiliary pumping process and fluorescence transition process are combined with the auxiliary pumping process of auxiliary pumping semiconductor laser system, and generate metastable gas particles, as the effective working material of laser;The main pumping semiconductor laser generated by main pumping semiconductor laser system is transmitted and injected into the resonant cavity, realizes the particle number inversion between laser upper and lower energy levels, and obtains output laser after oscillation amplification.The application has the characteristics of high conversion efficiency, compact structure, small size, high pumping efficiency, etc., which can effectively improve the conversion efficiency of the existing gas laser by electric excitation to generate effective gas working medium.

Description

Technical Field

[0001] This invention belongs to the field of laser technology, and more specifically relates to an all-optical pumped gas laser. Background Technology

[0002] With the development of technology, the demand for high-beam-quality, high-efficiency, and high-power lasers is increasing daily in the laser energy industry, laser industrial processing, aerospace, and defense sectors. Based on these demands, an all-optical pumped gas laser is proposed.

[0003] For lasers, the gain medium is crucial, determining the wavelength of the output beam and significantly influencing the laser's power level and beam mode. The development of gain media for high-power laser sources has progressed from YAG rod-shaped gain media (difficult to obtain fundamental mode output) to CO2 gas gain media (10kW-level fundamental mode) to fiber gain media (kW-level fundamental mode). High-power CO2 lasers, using gas gain media, offer high fundamental mode output power and good beam quality, but suffer from low electro-optical conversion efficiency, bulky structure, and unsuitability for flexible fiber transmission at far-infrared wavelengths. In kilowatt-level laser cutting and welding applications for thin and medium-thick plates, high-power fiber lasers have gradually replaced high-power CO2 lasers as the primary light source. However, the thermal effects and nonlinear effects in optical fibers limit further increases in the output power of single-fiber lasers. Currently proposed semiconductor-pumped alkali metal vapor lasers also belong to the semiconductor-pumped gaseous gain medium laser structure. However, they suffer from several drawbacks: the working material easily contaminates the laser output window; the working material is solid at room temperature and needs to be converted into a gas through heating, which not only introduces an additional heat source to the laser but also poses challenges to the temperature control of the alkali metal vapor pool and the control of the chemical activity of the alkali metal; the laser output process also produces substances that are toxic and harmful to humans and the environment. Although semiconductor-pumped rare gas lasers can overcome the shortcomings of semiconductor-pumped alkali metal vapor lasers and achieve high-power, high-beam-quality, and narrow-linewidth laser output, existing gas lasers, including semiconductor-pumped rare gas lasers, obtain the effective working material through DC or radio frequency gas discharge, resulting in the overall efficiency of the entire laser system being limited by the low efficiency of gas discharge.

[0004] Therefore, how to provide an all-optical pumped gas laser has become a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of this, the present invention provides an all-optical pumped gas laser by utilizing existing extreme ultraviolet light sources, coating and beam shaping technologies. It combines the advantages of gas and all-solid-state (semiconductor) lasers, and can achieve high power, high efficiency, high beam quality and high stability continuous laser output. Its purpose is to solve the problems of poor beam quality of existing high-power semiconductor lasers, contamination of the laser output window by the working material in existing semiconductor-pumped alkali metal vapor lasers and the generation of toxic and harmful substances to humans and the environment during operation, as well as the low discharge conversion efficiency of existing semiconductor-pumped rare gas lasers.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] An all-optical pumped gas laser includes a resonant cavity, an extreme ultraviolet laser system, an auxiliary pumping semiconductor laser system, and a main pumping semiconductor laser system. The main pumping semiconductor laser system is disposed on both the left and right sides of the resonant cavity, and the extreme ultraviolet laser system and the auxiliary pumping semiconductor laser system are disposed on the upper and lower sides of the resonant cavity, respectively.

[0008] The extreme ultraviolet (EUV) laser system generates EUV laser light, achieving the transition energy state of metastable gas particles in the laser during the EUV pumping process. Combined with the auxiliary pumping process and fluorescence transition process involving the auxiliary pumping semiconductor laser system, metastable gas particles are generated, serving as the effective working medium of the laser. The main pumping semiconductor laser light generated by the main pumping semiconductor laser system is transmitted and injected into the resonant cavity, achieving population inversion between the upper and lower energy levels of the laser. After oscillation and amplification, the output laser light is obtained.

[0009] Furthermore, the extreme ultraviolet laser system includes an extreme ultraviolet laser and an extreme ultraviolet optical shaping system. An extreme ultraviolet transmission window is provided at the position opposite to the extreme ultraviolet optical shaping system in the resonant cavity. The extreme ultraviolet laser injects extreme ultraviolet pump light into the resonant cavity through the extreme ultraviolet optical shaping system and the extreme ultraviolet transmission window of the corresponding wavelength to generate the transition energy state s[3 / 2]1 of metastable gas particles.

[0010] Furthermore, the auxiliary pump semiconductor laser system includes an auxiliary pump semiconductor laser and an auxiliary pump optical shaping system. An auxiliary pump semiconductor laser transmission window is provided at a position opposite to the auxiliary pump optical shaping system in the resonant cavity. The auxiliary pump semiconductor laser injects the auxiliary pump semiconductor laser into the resonant cavity through the auxiliary pump optical shaping system and the auxiliary pump semiconductor laser transmission window of the corresponding wavelength, realizing the auxiliary pumping process s[3 / 2]1→p[3 / 2]1, and combined with the fluorescence process p[3 / 2]1→s[3 / 2]2, generating effective working gas particles for the laser: metastable gas particles s[3 / 2]2.

[0011] Furthermore, the main-pump semiconductor laser system includes a main-pump semiconductor laser and a main-pump optical shaping system. A main-pump semiconductor laser transmission window is provided at a position opposite to the main-pump optical shaping system in the resonant cavity. The main-pump semiconductor laser injects the main-pump semiconductor laser into the resonant cavity through the main-pump optical shaping system and the main-pump semiconductor laser transmission window of the corresponding wavelength, realizing the main pumping process s[3 / 2]2→p[5 / 2]3. Combined with the collision relaxation transition process p[5 / 2]3→p[1 / 2]1, a population inversion between the upper and lower energy levels of the laser is formed during normal laser operation: p[1 / 2]1→s[3 / 2]2.

[0012] Furthermore, the axes of the extreme ultraviolet laser, the auxiliary pump semiconductor laser, and the main pump semiconductor laser pair are all orthogonal to the axis of the resonant cavity and intersect at the center of the resonant cavity.

[0013] Furthermore, a tail mirror and an output mirror are respectively provided on the two end faces perpendicular to the axis of the resonant cavity. The tail mirror and the output mirror together with the gas working substance form a resonant cavity. The main pump semiconductor laser injected into the resonant cavity realizes the population inversion between the upper and lower energy levels of the laser. After oscillation and amplification by the tail mirror and the output mirror, the output laser is obtained through the output mirror.

[0014] Furthermore, the gas medium in the resonant cavity includes rare gases; the center wavelength of the laser emitted by the main pump semiconductor laser matches the absorption spectrum of the effective working gas particles generated in the resonant cavity through the extreme ultraviolet light pumping and auxiliary pumping processes involving the extreme ultraviolet laser and the auxiliary pump semiconductor laser.

[0015] Furthermore, the rare gas is mixed with a certain proportion of argon and helium, and operates at a pressure close to one atmosphere.

[0016] Furthermore, the resonant cavity has a high transmittance film corresponding to the pump light wavelength on the side facing the extreme ultraviolet pump light, the auxiliary pump semiconductor laser, and the main pump semiconductor laser, respectively, forming an extreme ultraviolet light transmission window, an auxiliary pump semiconductor laser transmission window, and a main pump semiconductor laser transmission window. The remaining part of the resonant cavity is coated with a high reflectance film for the main pump semiconductor laser.

[0017] Furthermore, the resonant cavity is made of high borate glass or ceramic material.

[0018] The beneficial effects of this invention are as follows:

[0019] (1) By adopting extreme ultraviolet light pumping and auxiliary pumping mechanism, metastable gas particles can be obtained with high conversion efficiency through fluorescence transition process. At the same time, by controlling the power of extreme ultraviolet pump light and auxiliary pump semiconductor laser, the concentration of metastable gas particles can be easily controlled, which is conducive to improving the stability of normal laser operation and thus providing a guarantee for improving the high power output of laser.

[0020] (2) With the help of the side pumping structure, the technology is more mature and reliable. Compared with the end pumping structure, it can effectively increase the contact area between the pump light and the gas gain medium, thereby increasing the collision probability between the two and improving the pumping efficiency. At the same time, the pumping structure, which is orthogonal to each other and intersects at the center of the resonant cavity, is conducive to the uniform distribution of the temperature gradient inside the resonant cavity, improves the stability of the laser during normal operation, and provides a guarantee for improving the laser output power.

[0021] (3) The working substance used is a chemically stable, non-toxic, and harmless high-purity single rare gas, a binary mixture of two rare gases, or a multi-component mixture of rare gas and other auxiliary gases. This type of working substance will not produce substances that are toxic or harmful to humans and the environment during laser output.

[0022] (4) By using coating technology, a high transmittance film for the pump light is coated on the pump light transmission window on the side of the resonant cavity facing the incident pump light, and a high reflectance film for the pump light is coated on the remaining inner surface. This can realize a multi-path reflection process of the main pump light similar to blackbody radiation, increase the collision probability of the pump light with the gas gain medium, thereby improving the pump efficiency. At the same time, combined with the optical shaping system, it is beneficial to inject three different wavelength pump lasers into the resonant cavity more fully, improve the pump intensity of the pump laser, and thus improve the pump efficiency of the output laser. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the present utility model embodiments or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 A schematic diagram of the structure of the all-optically pumped rare gas laser provided by the present invention;

[0025] Figure 2 A cross-sectional view of the all-optically pumped rare gas laser provided for this publication, perpendicular to the resonant cavity axis;

[0026] Figure 3 This invention provides a schematic diagram of the energy level structure during the normal operation of an all-optically pumped rare gas laser.

[0027] In the figure,

[0028] 1-Resonant cavity, 2-Main pump semiconductor laser, 3-Main pump optical shaping system, 4-Main pump semiconductor laser, 5-Extreme ultraviolet laser, 6-Extreme ultraviolet optical shaping system, 7-Extreme ultraviolet pump light, 8-Main pump semiconductor laser transmission window, 9-Auxiliary pump semiconductor laser, 10-Auxiliary pump optical shaping system, 11-Auxiliary pump semiconductor laser, 12-Auxiliary pump semiconductor laser transmission window, 13-Tail mirror, 14-Output mirror, 15-Output laser, 16-Extreme ultraviolet light transmission window. Detailed Implementation

[0029] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0030] refer to Figure 1 The present invention provides an all-optical pumped gas laser, comprising: a resonant cavity, an extreme ultraviolet laser system, an auxiliary pumping semiconductor laser system and a main pumping semiconductor laser system, wherein the main pumping semiconductor laser system is disposed on both the left and right sides of the resonant cavity, and the extreme ultraviolet laser system and the auxiliary pumping semiconductor laser system are disposed on the upper and lower sides of the resonant cavity respectively.

[0031] The extreme ultraviolet (EUV) laser system generates EUV laser light, realizing the transition energy state of metastable gas particles in the laser during the EUV pumping process. Combined with the auxiliary pumping process and fluorescence transition process involving the auxiliary pumping semiconductor laser system, metastable gas particles are generated, which serve as the effective working medium of the laser. The main pumping semiconductor laser light generated by the main pumping semiconductor laser system is transmitted and injected into the resonant cavity 1, realizing population inversion between the upper and lower energy levels of the laser. After oscillation and amplification, the output laser 15 is obtained.

[0032] The extreme ultraviolet laser system includes an extreme ultraviolet laser 5 and an extreme ultraviolet optical shaping system 6. An extreme ultraviolet transmission window 16 is provided at the position opposite to the extreme ultraviolet optical shaping system 6. The extreme ultraviolet laser 5 injects extreme ultraviolet pump light 7 into the resonant cavity 1 through the extreme ultraviolet optical shaping system 6 and the extreme ultraviolet transmission window 16 of the corresponding wavelength to generate the transition energy state s[3 / 2]1 of metastable gas particles.

[0033] The auxiliary pump semiconductor laser system includes an auxiliary pump semiconductor laser 9 and an auxiliary pump optical shaping system 10. An auxiliary pump semiconductor laser transmission window 12 is provided at a position opposite to the auxiliary pump optical shaping system 10. The auxiliary pump semiconductor laser 9 injects the auxiliary pump semiconductor laser 11 into the resonant cavity 1 through the auxiliary pump optical shaping system 10 and the auxiliary pump semiconductor laser transmission window 12 of the corresponding wavelength, realizing the auxiliary pumping process s[3 / 2]1→p[3 / 2]1, and combined with the fluorescence process p[3 / 2]1→s[3 / 2]2, generates the effective working gas particles of the laser: metastable gas particles s[3 / 2]2.

[0034] The main pump semiconductor laser system includes a main pump semiconductor laser 2 and a main pump optical shaping system 3. A main pump semiconductor laser transmission window 8 is provided at the position opposite to the main pump optical shaping system 3 in the resonant cavity 1. The main pump semiconductor laser 2 injects the main pump semiconductor laser 4 into the resonant cavity 1 through the main pump optical shaping system 3 and the main pump semiconductor laser transmission window 8 of the corresponding wavelength, realizing the main pumping process s[3 / 2]2→p[5 / 2]3, and combined with the collision relaxation transition process p[5 / 2]3→p[1 / 2]1, the population inversion between the upper and lower energy levels of the laser during normal laser operation is formed: p[1 / 2]1→s[3 / 2]2.

[0035] Extreme ultraviolet laser 5 serves as the pump light, which is injected into resonant cavity 1 after passing through extreme ultraviolet optical shaping system 6. This process generates the transition energy state of the effective working medium of the laser through extreme ultraviolet light pumping. Combined with the auxiliary pumping process and fluorescence process of the auxiliary pump semiconductor laser, it generates metastable gas particles, which are the effective working gas particles of the laser. The main pump semiconductor laser 2 serves as the main pump light, and its center wavelength matches the absorption spectrum of the gas particles after the working gas discharge in resonant cavity 1. It is injected into resonant cavity 1 after passing through main pump optical shaping system 3, and resonant cavity 1 outputs laser light.

[0036] In this embodiment, the axis of the extreme ultraviolet laser 5, the axis of the auxiliary pump semiconductor laser 9, and the axis of the main pump semiconductor laser pair 2 are all orthogonal to the axis of the resonant cavity 1 and intersect at the center of the resonant cavity 1.

[0037] In this embodiment, a tail mirror 13 and an output mirror 14 are respectively provided on the two end faces of the resonant cavity 1 in the direction perpendicular to the axis. The tail mirror 13 and the output mirror 14 together with the gas working substance constitute the resonant cavity 1. The main pump semiconductor laser 4 injected into the resonant cavity 1 realizes the population inversion between the upper and lower energy levels of the laser. After being oscillated and amplified by the tail mirror 13 and the output mirror 14, the output laser 15 is obtained through the output mirror 14.

[0038] In this embodiment, the gas medium in the resonant cavity 1 includes a rare gas or a mixture of a rare gas and other auxiliary gases; the center wavelength of the laser emitted by the main pump semiconductor laser 2 matches the absorption spectrum of the effective working gas particles generated in the resonant cavity 1 through the extreme ultraviolet light pumping and auxiliary pumping process involving the extreme ultraviolet laser 5 and the auxiliary pump semiconductor laser 9.

[0039] In this embodiment, a certain proportion of argon and helium are mixed in the rare gas, and the system operates at a pressure close to one atmosphere.

[0040] In this embodiment, the resonant cavity 1 has a high transmittance film corresponding to the pump light wavelength on the side facing the extreme ultraviolet pump light 7, the auxiliary pump semiconductor laser 11 and the main pump semiconductor laser 4, forming an extreme ultraviolet light transmission window 16, an auxiliary pump semiconductor laser transmission window 12 and a main pump semiconductor laser transmission window 8. The remaining part of the resonant cavity 1 is coated with a high reflectance film for the main pump semiconductor laser 4.

[0041] In this embodiment, the resonant cavity 1 is made of high borate glass or ceramic material.

[0042] Working principle of the invention:

[0043] This invention includes a resonant cavity 1, a main pump semiconductor laser pair 2, a main pump optical shaping system 3, an extreme ultraviolet (EUV) laser 5, an EUV optical shaping system 6, an auxiliary pump semiconductor laser 9, and an auxiliary pump optical shaping system 10. The resonant cavity 1 is made of high borosilicate glass or ceramic material, and its internal working substance is a non-toxic, harmless, and chemically stable rare gas. The gas composition can be a high-purity single rare gas, a binary mixture of two rare gases, or a multi-component mixture of rare gases and other auxiliary gases. The EUV laser 5 injects EUV pump light 7 into the resonant cavity 1 through the EUV optical shaping system 6 and the EUV light transmission window 16 to generate a transition energy state s[3 / 2]1 of metastable gas particles. This, combined with the auxiliary pump semiconductor laser 9 participating in the s[3 / 2]1→p[3 / 2]1 auxiliary pumping process and the p[3 / 2]1→s[3 / 2]2 process, generates a transition energy state s[3 / 2]1 of metastable gas particles. The fluorescence process generates metastable gas particles—s[3 / 2]2 metastable gas particles—that are the effective working gas particles of the laser. Compared with existing processes that generate metastable gas particles through electrical excitation, this process has the advantages of high particle conversion efficiency, high stability, compact structure, and small size. The concentration of metastable gas particles can be conveniently controlled by adjusting parameters such as the power of the extreme ultraviolet pump light 7 and the auxiliary pump semiconductor laser 4, which is beneficial to improving the stability of the laser's normal operation and thus providing a guarantee for improving the high power output of the laser. The axes of the extreme ultraviolet laser 5, the auxiliary pump semiconductor laser 9, the main pump semiconductor laser pair 2, and the resonant cavity 1 are orthogonal to each other and intersect at the center of the resonant cavity. This is beneficial for the uniform distribution of the temperature gradient inside the resonant cavity 1, thereby improving the stability of the laser during normal operation. The two main pump semiconductor lasers 2 are located on both sides of the resonant cavity 1 in the direction parallel to the axis. Through the main pump optical shaping system 3 and the main pump semiconductor laser transmission window 8, the main pump semiconductor laser 4 is injected into the resonant cavity 1 to realize the s[3 / 2]2→p[5 / 2]3 main pumping process. Combined with the p[5 / 2]3→p[1 / 2]1 collision relaxation transition process, the population inversion between the upper and lower energy levels of the p[1 / 2]1→s[3 / 2]2 laser is formed during the normal operation of the laser. Through the coating technology, the resonant cavity 1 is oriented towards the main pump semiconductor laser 4 incident. The two sides of the resonant cavity 1 are coated with a high-transmittance film for the main pump semiconductor laser 4, and the remaining inner surface is coated with a high-reflectance film for the main pump semiconductor laser 4. This enables the main pump semiconductor laser 4 to achieve a multi-path reflection process similar to blackbody radiation, increasing the collision probability between the main pump semiconductor laser 4 and the gas gain medium, thereby improving the pumping efficiency. At the same time, combined with the main pump optical shaping system 3, it is beneficial to inject the main pump semiconductor laser 4 more fully into the resonant cavity 1, increasing the pump intensity and thus improving the pumping efficiency of the output laser, which is beneficial for the output of high-power lasers. The tail mirror 13 and the output mirror 14 are located on the two end faces perpendicular to the axis of the resonant cavity 1, respectively, and are used to generate the output laser 15.Extreme ultraviolet light transmission window 16 and auxiliary pump semiconductor laser transmission window 12 achieve high transmission of the corresponding pump light through coating technology. Their size and shape correspond to the shape and size of the corresponding laser spot, which is beneficial to improving the pumping efficiency of the above two pumping processes, thereby improving the effective working concentration of the laser s[3 / 2]2 gas particles, and providing a guarantee for achieving high power and high stability laser output; tail mirror 13 and output mirror 14 together with the gas medium form a resonant cavity 1, which is used to generate output laser 15. It is similar to the unstable resonant cavity in existing lasers. The unstable resonant cavity technology is used to extract the output laser, which has the characteristics of simple and compact structure, mature technology, and good stability.

[0044] This laser utilizes existing extreme ultraviolet light sources, coating, and beam shaping techniques to generate a practically effective working medium—metastable gas particles. Compared to existing methods of generating working media through gas discharge, it features high efficiency, compact structure, small size, and stable operation. It combines the advantages of gas and all-solid-state (semiconductor) lasers, as well as addressing issues such as the nonlinear effects of solid-state gain media at high power. It achieves a perfect combination of high power, high beam quality, and short-wavelength laser output, effectively preventing the nonlinear effects of high-power continuous single-mode lasers and high-power picosecond femtosecond lasers. It features high-power laser output, high pulse energy, good beam quality, high quantum efficiency, excellent atmospheric and fiber optic transmission characteristics, and high processing efficiency. It is an important potential light source for future applications in space energy transmission and large-scale industrial applications of ultrashort pulse lasers. Unlike conventional lasers, all-optically pumped gas lasers employ a three-stage optical pumping process: extreme ultraviolet (EUV) optical pumping, auxiliary pumping, and main pumping. This structure, compared to the combination of electrical excitation and optical pumping in existing semiconductor-pumped rare gas lasers, can improve the overall conversion efficiency, pumping efficiency, and stability of the laser, thereby increasing its output power.

[0045] Overall, this invention combines extreme ultraviolet light source, coating, and side-pumping technology to provide a hybrid laser with all-optical pumping, considering the need to output high-beam-quality, high-power continuous laser with high efficiency and stability.

[0046] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0047] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An all-optically pumped gas laser, characterized in that, include: The resonant cavity comprises an extreme ultraviolet laser system, an auxiliary pump semiconductor laser system, and a main pump semiconductor laser system. The main pump semiconductor laser system is disposed on both the left and right sides of the resonant cavity, and the extreme ultraviolet laser system and the auxiliary pump semiconductor laser system are disposed on the upper and lower sides of the resonant cavity, respectively. The extreme ultraviolet laser system generates extreme ultraviolet laser, realizes the transition energy state of metastable gas particles generated by the extreme ultraviolet pumping process, and generates metastable gas particles as the effective working material of the laser by combining the auxiliary pumping semiconductor laser system and the fluorescence transition process. The main pumping semiconductor laser generated by the main pumping semiconductor laser system is transmitted and injected into the resonant cavity (1) to realize the population inversion between the upper and lower energy levels of the laser. After oscillation and amplification, the output laser (15) is obtained. The extreme ultraviolet laser system includes an extreme ultraviolet laser (5) and an extreme ultraviolet optical shaping system (6). An extreme ultraviolet light transmission window (16) is provided at the position opposite to the extreme ultraviolet optical shaping system (6). The extreme ultraviolet laser (5) injects extreme ultraviolet pump light (7) into the resonant cavity (1) through the extreme ultraviolet optical shaping system (6) and the extreme ultraviolet light transmission window (16) of the corresponding wavelength to generate the transition energy state s[3 / 2]1 of metastable gas particles. The auxiliary pump semiconductor laser system includes an auxiliary pump semiconductor laser (9) and an auxiliary pump optical shaping system (10). An auxiliary pump semiconductor laser transmission window (12) is provided at a position opposite to the auxiliary pump optical shaping system (10). The auxiliary pump semiconductor laser (9) injects the auxiliary pump semiconductor laser (11) into the resonant cavity (1) through the auxiliary pump optical shaping system (10) and the auxiliary pump semiconductor laser transmission window (12) of the corresponding wavelength, realizing the auxiliary pumping process s[3 / 2]1→p[3 / 2]1, and combined with the fluorescence process p[3 / 2]1→s[3 / 2]2, generating effective working gas particles of the laser: metastable gas particles s[3 / 2]2. The main pump semiconductor laser system includes a main pump semiconductor laser (2) and a main pump optical shaping system (3). The resonant cavity (1) is provided with a main pump semiconductor laser transmission window (8) at a position opposite to the main pump optical shaping system (3). The main pump semiconductor laser (2) injects the main pump semiconductor laser (4) into the resonant cavity (1) through the main pump optical shaping system (3) and the main pump semiconductor laser transmission window (8) of the corresponding wavelength, realizing the main pumping process s[3 / 2]2→p[5 / 2]3, and combined with the collision relaxation transition process p[5 / 2]3→p[1 / 2]1, forming the population inversion between the upper and lower energy levels of the laser during normal laser operation: p[1 / 2]1→s[3 / 2]2.

2. The all-optically pumped gas laser according to claim 1, characterized in that, The axes of the extreme ultraviolet laser (5), the auxiliary pump semiconductor laser (9), and the main pump semiconductor laser (2) are all orthogonal to the axis of the resonant cavity (1) and intersect at the center of the resonant cavity (1).

3. The all-optically pumped gas laser according to claim 1, characterized in that, The resonant cavity (1) has a tail mirror (13) and an output mirror (14) respectively arranged on two end faces perpendicular to the axis of the resonant cavity (1). The tail mirror (13) and the output mirror (14) together with the gas working substance form the resonant cavity (1). The main pump semiconductor laser (4) injected into the resonant cavity (1) realizes the population inversion between the upper and lower energy levels of the laser. After the oscillation amplification by the tail mirror (13) and the output mirror (14), the output laser (15) is obtained through the output mirror (14).

4. The all-optically pumped gas laser according to claim 1, characterized in that, The gas medium in the resonant cavity (1) includes rare gases; the center wavelength of the laser emitted by the main pump semiconductor laser (2) matches the absorption spectrum of the effective working gas particles generated in the resonant cavity (1) through the extreme ultraviolet light pumping and auxiliary pumping process involving the extreme ultraviolet laser (5) and the auxiliary pump semiconductor laser (9).

5. The all-optically pumped gas laser according to claim 4, characterized in that, The rare gas is mixed with a certain proportion of argon and helium, and operates at a pressure close to one atmosphere.

6. The all-optically pumped gas laser according to claim 1, characterized in that, The resonant cavity (1) has a high transmittance film corresponding to the pump light wavelength on the side facing the extreme ultraviolet pump light (7), the auxiliary pump semiconductor laser (11) and the main pump semiconductor laser (4), forming an extreme ultraviolet light transmission window (16), an auxiliary pump semiconductor laser transmission window (12) and a main pump semiconductor laser transmission window (8). The remaining part of the resonant cavity (1) is coated with a high reflectance film for the main pump semiconductor laser (4).

7. The all-optically pumped gas laser according to claim 1, characterized in that, The resonant cavity (1) is made of high borate glass or ceramic material.

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