A high-temperature etching method based on flow field control

Abstract

The present invention provides a high-temperature etching method based on flow field control, comprising: step S1, obtaining a substrate, and cleaning the surface of the substrate with a cleaning solution; step S2, spraying an atomized solution onto the surface of the substrate to form a thermal energy flow field, and detecting a real-time temperature of the thermal energy flow field in real time; step S3, judging whether the real-time temperature of the thermal energy flow field is greater than a preset temperature: if not, increasing the temperature of the atomized solution and returning to step S2; if so, turning to step S4; step S4, spraying an etching solution onto the surface of the substrate for etching. The beneficial effect is that the method detects the real-time temperature of the thermal energy flow field in real time and adjusts the temperature of the atomized solution so that the real-time temperature is greater than the preset temperature, so that the atomized solution and the etching solution are fully in contact, and detects the surface temperature of the substrate during the etching process and adjusts it in real time, thereby improving the etching effect of the etching solution.

Description

Technical Field

[0001] The present invention relates to the technical field of substrate etching, and in particular to a high-temperature etching method based on flow field control. Background Art

[0002] During the wet process of high-temperature chemicals, the temperature and concentration need to be precisely controlled. However, in the actual process, due to insufficient control of the temperature and concentration of the chemicals, crystallized crystals will be generated on the substrate surface before and after output.

[0003] Most current etching methods use the method of detecting the solution temperature at the nozzle outlet for temperature control. However, due to the certain distance between the substrate surface and the nozzle outlet, a certain error will occur when the solution reaches the substrate surface, which will greatly reduce the etching effect of the substrate. Summary of the Invention

[0004] In view of the problems existing in the prior art, the present invention provides a high-temperature etching method based on flow field control, which specifically includes the following steps:

[0005] Step S1, obtaining a substrate, and cleaning the surface of the substrate with a cleaning solution;

[0006] Step S2, spraying an atomized solution onto the surface of the substrate to form a thermal energy flow field, and detecting a real-time temperature of the thermal energy flow field in real time;

[0007] Step S3, determining whether the real-time temperature of the thermal energy flow field is greater than a preset temperature:

[0008] If not, increase the temperature of the atomized solution and return to step S2;

[0009] If yes, go to step S4;

[0010] Step S4: spraying an etching solution onto the surface of the substrate for etching.

[0011] Preferably, the step S1 cleans the surface of the substrate by a cleaning device, and the cleaning device comprises:

[0012] a placement table for placing the substrate;

[0013] a cleaning nozzle, for spraying the cleaning solution onto the surface of the substrate for cleaning;

[0014] A rotating shaft is used to control the rotation of the cleaning nozzle.

[0015] Preferably, the step S1 includes:

[0016] Step S11, obtaining the substrate, placing the substrate on the placement table and controlling the placement table to rotate;

[0017] Step S12 , controlling the rotating shaft to rotate the cleaning nozzle to above the substrate and controlling the cleaning nozzle to spray the cleaning solution.

[0018] Preferably, the cleaning nozzle is provided with a camera device, and the step S12 includes:

[0019] Step S121, controlling the rotating shaft to rotate the cleaning nozzle, and controlling the camera device to capture a real-time image of the substrate in real time;

[0020] Step S122, obtaining a real-time position of the cleaning nozzle relative to the substrate according to the real-time image processing;

[0021] Step S123: Determine whether the real-time location matches a preset location:

[0022] If so, controlling the rotating shaft to stop rotating the cleaning nozzle and proceeding to step S13;

[0023] If not, return to step S121.

[0024] Preferably, the cleaning device further comprises an atomizing nozzle, and the atomizing nozzle is provided with a first temperature detection device, and the step S2 comprises:

[0025] Step S21, controlling the atomizing nozzle to spray the atomized solution onto the surface of the substrate to form the thermal energy flow field;

[0026] Step S22: Control the first temperature detection device to detect the real-time temperature of the thermal energy flow field in real time.

[0027] Preferably, a vibrator is provided in the atomizing nozzle, and the step S21 includes:

[0028] Step S211, controlling the atomizing nozzle to continuously receive a chemical solution input from the outside, and controlling the vibrator to generate an ultrasonic wave to vibrate the chemical solution to form the atomized solution;

[0029] Step S212 , controlling the atomizing nozzle to spray the atomized solution onto the surface of the substrate to form the thermal energy flow field.

[0030] Preferably, the cleaning device further comprises an etching nozzle, and the etching nozzle is provided with a second temperature detection device, and the step S4 comprises:

[0031] Step S41, controlling the etching nozzle to spray the etching solution onto the surface of the substrate to etch a photoresist layer on the surface of the substrate;

[0032] Step S42, controlling the second temperature detection device to detect a surface temperature of the substrate in real time;

[0033] Step S43: determine whether the surface temperature is greater than a preset standard temperature:

[0034] If not, increase the temperature of the atomized solution and return to step S42;

[0035] If so, maintain the temperature of the atomized solution and exit.

[0036] Preferably, the etching solution is one of a sulfuric acid-hydrogen peroxide mixture, a sulfuric acid-ozone mixture, liquid No. 1, liquid No. 2, and a buffered oxide etching solution.

[0037] The above technical solution has the following advantages or beneficial effects:

[0038] (1) This method forms a thermal energy flow field on the substrate surface by atomizing the solution, and heats the etching solution through full contact with the thermal energy flow field, thus having the ability to maintain a constant temperature;

[0039] (2) This method performs real-time temperature control on the thermal energy flow field, maintains high-temperature airflow covering the entire surface of the substrate, and maintains temperature stability;

[0040] (3) This method makes it easier for the etching solution to contact and diffuse on the substrate surface through the thermal energy flow field. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A flowchart of the steps of the method in a preferred embodiment of the present invention is shown below;

[0042] Figure 2 Detailed flow chart of step S1 in a preferred embodiment of the present invention;

[0043] Figure 3 Detailed flow chart of step S12 in a preferred embodiment of the present invention;

[0044] Figure 4 Detailed flow chart of step S2 in a preferred embodiment of the present invention;

[0045] Figure 5 Detailed flow chart of step S21 in a preferred embodiment of the present invention;

[0046] Figure 6 This is a specific flow chart of step S4 in a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also fall within the scope of the present invention as long as they conform to the gist of the present invention.

[0048] In a preferred embodiment of the present invention, based on the above problems existing in the prior art, a high temperature etching method based on flow field control is provided. Figure 1 Shown, including:

[0049] Step S1, obtaining a substrate and cleaning the surface of the substrate with a cleaning solution;

[0050] Step S2, spraying the atomized solution onto the surface of the substrate to form a thermal energy flow field, and detecting a real-time temperature of the thermal energy flow field in real time;

[0051] Step S3, determining whether the real-time temperature of the thermal energy flow field is greater than a preset temperature:

[0052] If not, increase the temperature of the atomized solution and return to step S2;

[0053] If yes, go to step S4;

[0054] Step S4: spraying etching solution onto the surface of the substrate for etching.

[0055] In a preferred embodiment of the present invention, step S1 is to clean the surface of the substrate by a cleaning device, and the cleaning device includes:

[0056] a placement table for placing the substrate;

[0057] a cleaning nozzle for spraying a cleaning solution onto the surface of the substrate for cleaning;

[0058] A rotating shaft is used to control the rotation of the cleaning nozzle.

[0059] Specifically, in this embodiment, in actual operation, the rotating shaft is first controlled to move the cleaning nozzle above the substrate and the cleaning nozzle is controlled to spray the cleaning solution to wet the surface of the substrate. After the spraying is completed, the rotating shaft is controlled to move the cleaning nozzle to the initial position.

[0060] Preferably, the atomizing solution is deionized water or hydrogen peroxide.

[0061] Preferably, the cleaning nozzle can be a cylindrical nozzle.

[0062] In a preferred embodiment of the present invention, Figure 2 As shown, step S1 includes:

[0063] Step S11, obtaining a substrate, placing the substrate on a placement table and controlling the placement table to rotate;

[0064] Step S12 , controlling the rotating shaft to rotate the cleaning nozzle to above the substrate and controlling the cleaning nozzle to spray the cleaning solution.

[0065] In a preferred embodiment of the present invention, a camera device is provided on the cleaning nozzle, and step S12 is as follows: Figure 3 Shown, including:

[0066] Step S121, controlling the rotating shaft to rotate the cleaning nozzle, and controlling the camera device to capture a real-time image of the substrate;

[0067] Step S122, obtaining a real-time position of the cleaning nozzle relative to the substrate based on real-time image processing;

[0068] Step S123: Determine whether the real-time location matches a preset location:

[0069] If so, the rotating shaft is controlled to stop rotating the cleaning nozzle and the process goes to step S13;

[0070] If not, return to step S121.

[0071] Specifically, in this embodiment, considering that the cleaning nozzle needs to clean the surface of the substrate as comprehensively as possible, the preset position of the cleaning nozzle is set to be directly above the center position of the substrate.

[0072] Preferably, in order to enable the cleaning nozzle to accurately reach the preset position, a camera device is set on the cleaning nozzle to collect real-time images above the substrate. The real-time position of the cleaning nozzle is obtained through real-time image processing. By comparing the real-time position with the preset position, the cleaning nozzle is controlled to accurately reach the preset position for spraying.

[0073] Preferably, the distance between the center position of the cleaning nozzle and the camera device can be obtained through actual measurement, so the real-time position of the center position of the cleaning nozzle can be obtained by spatial displacement through real-time images, so that after the movement is completed, the center position of the cleaning nozzle can be directly above the center position of the substrate.

[0074] Preferably, since a cylindrical nozzle is selected as the cleaning nozzle, the coverage of the cleaning solution sprayed by the cleaning nozzle can be maximized. If there are areas on the substrate surface that are not cleaned, the size of the nozzle of the cleaning nozzle can be adjusted.

[0075] Preferably, in order to prevent the cleaning nozzle from affecting the normal use of the etching nozzle, the height of the cleaning nozzle relative to the substrate is set between the etching nozzle and the substrate, so that the cleaning nozzle does not contact the etching nozzle during rotation.

[0076] In a preferred embodiment of the present invention, the cleaning device further comprises an atomizing nozzle, and a first temperature detecting device is provided on the atomizing nozzle. Then, step S2 is as follows: Figure 4 Shown, including:

[0077] Step S21, controlling the atomizing nozzle to spray the atomized solution onto the surface of the substrate to form a thermal energy flow field;

[0078] Step S22, controlling the first temperature detection device to detect the real-time temperature of the thermal energy flow field in real time.

[0079] Specifically, in this embodiment, the atomizing nozzle can be set on the side of the substrate. Since the atomizing nozzle is set on the side of the substrate, a trapezoidal nozzle can be selected as the atomizing nozzle, so that the spray range of the atomized solution is increased, and as the placement table rotates, the atomized solution can cover the entire surface of the substrate, maintain high-temperature airflow coverage in the entire range of the substrate, and maintain temperature stability.

[0080] Preferably, considering that the atomizing nozzle will spray the atomized solution to the bottom of the placement table when spraying the atomized solution, a recovery module can be set under the placement table, which can be used to collect the cleaning solution flowing from the surface of the substrate during the cleaning process, can be used to collect the atomized solution flowing from the surface of the substrate, and can also collect the etching solution flowing from the surface of the substrate during the etching process.

[0081] Preferably, the cleaning solution, atomized solution and etching solution collected in the recovery module can be recycled for a second time.

[0082] Preferably, the temperature of the atomized solution is 10 degrees Celsius to 99.9 degrees Celsius.

[0083] Preferably, the particle size of the atomized solution is 1 nm to 100,000 nm.

[0084] In a preferred embodiment of the present invention, a vibrator is provided in the atomizing nozzle, and step S21 is as follows: Figure 5 Shown, including:

[0085] Step S211, controlling the atomizing nozzle to continuously receive a chemical solution input from the outside, and controlling the vibrator to generate an ultrasonic wave to vibrate the chemical solution to form an atomized solution;

[0086] In step S212 , the atomizing nozzle is controlled to spray the atomized solution onto the surface of the substrate to form a thermal energy flow field.

[0087] In a preferred embodiment of the present invention, the cleaning device further comprises an etching nozzle, and a second temperature detection device is provided on the etching nozzle. Then, step S4 is as follows: Figure 6 Shown, including:

[0088] Step S41, controlling the etching nozzle to spray an etching solution onto the surface of the substrate to etch a photoresist layer on the surface of the substrate;

[0089] Step S42, controlling the second temperature detection device to detect a surface temperature of the substrate in real time;

[0090] Step S43: determine whether the surface temperature is greater than a preset standard temperature:

[0091] If not, increase the temperature of the atomized solution and return to step S42;

[0092] If so, maintain the temperature of the nebulized solution and exit.

[0093] Specifically, in this embodiment, considering that the etching nozzle is at the highest height relative to the substrate, a bowl-shaped nozzle with a small upper end diameter and a large lower end diameter is selected as the etching nozzle, so that the spray range of the etching solution can cover the upper surface of the substrate.

[0094] Specifically, in this embodiment, the etching nozzle can adopt a composite output nozzle with a double-sleeve structure, which is placed corresponding to the output pipeline of hydrogen peroxide and sulfuric acid. It first enters the inner tube sleeve to mix the hydrogen peroxide and sulfuric acid. After sufficient mixing, the liquid is introduced into the outer tube sleeve under the action of being pushed. Under the action of circulating flow, it produces an extrusion and bubble breaking effect, reducing the problem of a large number of bubbles generated in the mixed solution of hydrogen peroxide and sulfuric acid, and then output from the nozzle.

[0095] Preferably, hydrogen peroxide and sulfuric acid are mixed after entering the inner tube sleeve. Under the pushing effect of the liquid, the bubbles will move upward due to their low specific gravity. Then, after being pushed by the liquid, the bubbles move to the open area above. While being pushed by the liquid, the mixed solution is discharged into the outer tube sleeve by the reflux effect of the inner tube sleeve.

[0096] In a preferred embodiment of the present invention, the etching solution is one of a sulfuric acid-hydrogen peroxide mixture, a sulfuric acid-ozone mixture, liquid No. 1, liquid No. 2, and a buffered oxide etching solution.

[0097] Specifically, in this embodiment, liquid No. 1 is a mixture of ammonia, peroxide, and water, liquid No. 2 is a mixture of hydrochloric acid, peroxide, and water, and the buffered oxide etching solution is hydrogen fluoride or ammonium fluoride.

[0098] Specifically, in this embodiment, acid and water replenishment devices can be configured to avoid problems such as temperature loss and viscosity failure, and reactive balance can be performed in real time, providing immediate feedback to restore highly stable selective cleaning capabilities and uniformity.

[0099] Specifically, in this embodiment, during the actual cleaning and etching process, the cleaning nozzles, atomizing nozzles, and etching nozzles may be arranged and swung in different combinations of spraying to optimize the etching effect.

[0100] The above description is only a preferred embodiment of the present invention and does not limit the implementation mode and protection scope of the present invention. For those skilled in the art, it should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the content of this specification and illustrations should be included in the protection scope of the present invention.

Claims

1. A high temperature etching method based on flow field control, characterized in that: Specifically include the following steps: Step S1, obtaining a substrate, and cleaning the surface of the substrate with a cleaning solution; Step S2, spraying an atomized solution onto the surface of the substrate to form a thermal energy flow field, and detecting a real-time temperature of the thermal energy flow field in real time; Step S3, determining whether the real-time temperature of the thermal energy flow field is greater than a preset temperature: If not, increase the temperature of the atomized solution and return to step S2; If yes, go to step S4; Step S4, spraying an etching solution onto the surface of the substrate for etching; By performing real-time temperature control on the thermal energy flow field, the high-temperature airflow covering the entire surface of the substrate is maintained.

2. The high temperature etching method according to claim 1, wherein: In step S1, the surface of the substrate is cleaned by a cleaning device, and the cleaning device includes: a placement table for placing the substrate; a cleaning nozzle, for spraying the cleaning solution onto the surface of the substrate for cleaning; A rotating shaft is used to control the rotation of the cleaning nozzle.

3. The high temperature etching method according to claim 2, wherein: The step S1 comprises: Step S11, obtaining the substrate, placing the substrate on the placement table and controlling the placement table to rotate; Step S12 , controlling the rotating shaft to rotate the cleaning nozzle to above the substrate and controlling the cleaning nozzle to spray the cleaning solution.

4. The high temperature etching method according to claim 3, characterized in that: The cleaning nozzle is provided with a camera device, and the step S12 includes: Step S121, controlling the rotating shaft to rotate the cleaning nozzle, and controlling the camera device to capture a real-time image of the substrate in real time; Step S122, obtaining a real-time position of the cleaning nozzle relative to the substrate according to the real-time image processing; Step S123: Determine whether the real-time location matches a preset location: If so, controlling the rotating shaft to stop rotating the cleaning nozzle and proceeding to step S2; If not, return to step S121.

5. The high temperature etching method according to claim 2, wherein: The cleaning device further includes an atomizing nozzle, and the atomizing nozzle is provided with a first temperature detection device, and the step S2 includes: Step S21, controlling the atomizing nozzle to spray the atomized solution onto the surface of the substrate to form the thermal energy flow field; Step S22: Control the first temperature detection device to detect the real-time temperature of the thermal energy flow field in real time.

6. The high temperature etching method according to claim 5, characterized in that: If a vibrator is provided in the atomizing nozzle, step S21 includes: Step S211, controlling the atomizing nozzle to continuously receive a chemical solution input from the outside, and controlling the vibrator to generate an ultrasonic wave to vibrate the chemical solution to form the atomized solution; Step S212 , controlling the atomizing nozzle to spray the atomized solution onto the surface of the substrate to form the thermal energy flow field.

7. The high temperature etching method according to claim 2, wherein: The cleaning device further includes an etching nozzle, and the etching nozzle is provided with a second temperature detection device, and the step S4 includes: Step S41, controlling the etching nozzle to spray the etching solution onto the surface of the substrate to etch a photoresist layer on the surface of the substrate; Step S42, controlling the second temperature detection device to detect a surface temperature of the substrate in real time; Step S43: determine whether the surface temperature is greater than a preset standard temperature: If not, increase the temperature of the atomized solution and return to step S42; If so, maintain the temperature of the atomized solution and exit.

8. The high temperature etching method according to claim 1, wherein: The etching solution is one of a sulfuric acid-hydrogen peroxide mixture, a sulfuric acid-ozone mixture, liquid No. 1, liquid No. 2, and a buffered oxide etching solution; The first liquid is a mixture of ammonia, peroxide and water; The second liquid is a mixture of hydrochloric acid, peroxide and water; The buffered oxide etching solution is hydrogen fluoride or ammonium fluoride.

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