An ultra-thin VC vapor chamber with a spiral curve etched groove and a design method thereof

Abstract

The present application relates to the technical field of precision etching, and aims at the technical problems of large volume, thick thickness, long etching groove of cooling liquid and poor circulation of the current VC heat plate, and provides an ultrathin VC heat plate with spiral curve etching groove and a design method thereof, at least one cooling unit with spiral curve etching groove is arranged on the lower cover plate of the VC heat plate, the cooling unit comprises an initial liquid storage groove, a plurality of spiral curve etching grooves in communication with the initial liquid storage groove and a plurality of balanced temperature liquid storage grooves arranged on the spiral curve etching grooves, and the position of the initial liquid storage groove is the same as the high temperature area of the electronic component. The present application is based on the Archimedes spiral curve which belongs to the equal speed ratio and equal distance ratio spiral curve, and utilizes the characteristic that the spiral length is the shortest in various curves of passing through two points on the cylinder surface, so as to shorten the length of the etching groove of the cooling liquid, improve the circulation frequency of the cooling liquid, and achieve the effect of rapid cooling.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of precision etching, and particularly relates to an ultra-thin VC heat plate with a spiral curve etching groove and a design method thereof. BACKGROUND

[0002] At present, VC heat plates are generally used to dissipate heat and control temperature of electronic components such as CPUs, PCBs and batteries. Due to the different sizes of heat-emitting areas of electronic components, the shapes of high-temperature zones, medium-high-temperature zones and low-temperature zones are quite different. However, the existing VC heat plates used to solve the heat dissipation problem are single in form, and the industry generally uses etching process to manufacture, that is, a vacuum cavity is etched on two copper alloy sheets, then a 200-250 mesh copper mesh is fixed in the cavity by resistance welding process, then the copper sheets are welded together, and the VC heat plate is manufactured through processes such as vacuumizing, filling cooling liquid, secondary degassing and head spot welding.

[0003] The existing VC heat plate has the following defects in dissipating heat and controlling temperature of electronic components with medium and small heat-emitting areas and obvious high, medium-high and low temperature zones:

[0004] 1. The volume, thickness and weight of the VC heat plate cannot be further reduced, which is not conducive to the miniaturization and light weight of the VC heat plate.

[0005] 2. The 200-250 mesh copper mesh is used to store the cooling liquid, and the processing procedure is complex and the cost is high.

[0006] 3. The cooling liquid groove etched on the copper alloy is usually a groove penetrating from top to bottom, the cooling liquid flow path is long and the circulation efficiency is poor, the medium and small heat-emitting surfaces cannot be cooled in a targeted manner, which makes it difficult to reduce the temperature difference of the heat-emitting surface and further improve the user experience.

[0007] To solve the above problems, it is necessary to provide a new type of VC heat plate which can accelerate the circulation of the cooling liquid and further improve the heat dissipation efficiency and reduce the temperature difference of the heat-emitting surface. SUMMARY

[0008] The present application provides a VC vapor chamber with spiral curve etching channels and a design method thereof, which is especially suitable for heat dissipation and temperature control of electronic components with medium or small heat dissipation area and obvious high, medium-high and low temperature regions.

[0009] The technical means adopted by the present application are as follows:

[0010] The present application provides a VC vapor chamber with spiral curve etching channels, characterized in that at least one cooling unit with spiral curve etching channels is arranged on the lower cover plate of the VC vapor chamber, the cooling unit comprises an initial liquid storage tank, a plurality of spiral curve etching channels connected with the initial liquid storage tank, and a plurality of balanced temperature liquid storage tanks arranged on the spiral curve etching channels; the position of the initial liquid storage tank is the same as the high temperature region of the electronic component.

[0011] Further, the spiral curve etching channels are arranged according to the Archimedes spiral curve formula:

[0012] ρ=r×((ω / ν)×θ+1),

[0013] wherein r is the radius of the high temperature region of the electronic component, which is taken as the radius of the initial liquid storage tank, ω is the linear motion speed of the cooling liquid flowing from the center of the initial liquid storage tank to each outlet, ν is the circular flow speed of the cooling liquid along the initial liquid storage tank, and ω / ν≈1 is basically unchanged, and the Archimedes spiral curve etching channel is designed according to the 45° tangent method.

[0014] Further, the balanced temperature liquid storage tanks are arranged at the points of the 45° tangent of the Archimedes spiral curve, and the diameter of the balanced temperature liquid storage tank is 1.5-2 times the width of the corresponding spiral curve etching channel.

[0015] Further, the structure of the spiral curve etching channel is one or a combination of more than one of equal width, gradually narrowing or gradually widening.

[0016] Further, the total number of spiral curve etched channels of the cooling unit is N, satisfying: N = number of cooling liquid phase change outflow channels N 出 + number of cooling liquid phase change backflow channels N 回 + number of channels connecting adjacent cooling units N 连 , wherein, when the cooling unit is one, the number of channels connecting adjacent cooling units N 连 = 0.

[0017] Further, in the cooling unit, the spiral curve etched channels connecting adjacent cooling units are of equal width structure.

[0018] Further, in the cooling unit, the cooling liquid phase change outflow channels flowing into the edge cooling liquid reservoir are of gradually widening structure; the cooling liquid phase change backflow channels backflowing into the initial reservoir are of gradually narrowing structure, i.e., gradually narrowing from the initial reservoir to the edge cooling liquid reservoir.

[0019] Further, a cooling liquid circulation flow adjusting port is arranged beside the inlet of the cooling liquid phase change backflow channel.

[0020] Further, a wave-shaped channel for increasing the heat dissipation area is etched on the upper cover plate of the VC vapor chamber.

[0021] The application also discloses a design method of an ultrathin VC vapor chamber with spiral curve etched channels.

[0022] S1, taking the radius r of the high temperature area of the electronic component as the radius of the initial reservoir, and the position of the initial reservoir is the same as that of the high temperature area of the electronic component;

[0023] S2, designing a cooling unit with spiral curve etched channels on the lower cover plate of the VC vapor chamber, so that the spiral curve etched channels satisfy the Archimedes spiral curve formula:

[0024] ρ = r * ((ω / ν) * θ + 1),

[0025] wherein r is the radius of the high temperature area of the electronic component, ω is the linear motion speed of the cooling liquid flowing from the center position of the initial reservoir to each outlet, ν is the circumferential flow speed of the cooling liquid, ω / ν ≈ 1 is basically unchanged, and the Archimedes spiral curve etched channel is designed by taking θ as 45° tangent; the number of etched channels is designed according to the temperature control requirement of the electronic component and the surface temperature difference requirement of the heat dissipation surface.

[0026] S3, when designing multiple cooling units, the core cooling unit corresponding to the position of the core high-temperature area of the electronic components, the initial liquid storage tank of the adjacent cooling units is connected by a spiral curve etching channel with equal width, and the number of connected etching channels is designed according to the temperature control requirements of the electronic components and the surface temperature difference requirements of the heat dissipation surface;

[0027] S4, the spiral curve etching channel of the inflow edge cooling liquid storage tank gradually widens, and the spiral curve etching channel of the return flow to the initial storage tank gradually narrows;

[0028] S5, each spiral curve etching channel has a plurality of balanced temperature storage tanks;

[0029] S6, a cooling liquid circulation flow adjusting port is arranged beside the return flow inlet of the spiral curve etching channel of the initial storage tank of the core cooling unit;

[0030] S7, the upper cover plate of the VC heat plate is etched into a wave shape and is welded and fixed with the lower cover plate of the VC heat plate.

[0031] The application has the following advantages:

[0032] The application is further to reduce the volume, thickness and weight of the existing VC heat plate, and to develop the VC heat plate in the direction of miniaturization and light weight. Under the premise of not using 200-250 mesh copper mesh as a cooler liquid storage device, the etching channel design method of Archimedes spiral is used for design.

[0033] The design scheme of using Archimedes spiral as etching channel is based on the fact that Archimedes spiral curve belongs to equal speed ratio and equal distance ratio spiral curve. By using the characteristic that the spiral length is the shortest in various curves passing through two points on the cylinder, the length of the cooling liquid etching channel can be shortened, and the circulation frequency of the cooling liquid can be improved, so that the effect of rapid cooling is achieved.

[0034] The application can improve the heat dissipation efficiency by more than 30%, control the temperature difference of the heating surface within 1-3 degrees, reduce the total product thickness from 0.3-0.4mm to ≤0.2mm, effectively stabilize the operating environment of the heat dissipation components, and improve the operating efficiency. At the same time, the VC heat plate processing procedure complexity is reduced, and the problem of high processing cost is solved.

[0035] Based on the above reasons, the application can be widely popularized in the field of precision etching. BRIEF DESCRIPTION OF DRAWINGS

[0036] In order to make the technical solutions in the embodiments of the present application or the prior art clearer, the accompanying drawings needed in the embodiments or prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort based on these drawings.

[0037] Figure 1 The combination schematic diagram of the ultra-thin VC vapor chamber with the spiral curve etching groove of the present application.

[0038] Figure 2 The temperature interval schematic diagram of the heating electronic component.

[0039] Figure 3 The schematic diagram of the cooling liquid flowing in the initial liquid storage groove.

[0040] Figure 4 The schematic diagram of the spiral curve etching groove with equal width of the present application.

[0041] Figure 5 The schematic diagram of the spiral curve etching groove gradually widened of the present application.

[0042] Figure 6 The schematic diagram of the spiral curve etching groove gradually narrowed of the present application.

[0043] Figure 7 The schematic diagram of the lower cover plate of the VC vapor chamber with the spiral curve etching groove of the present application.

[0044] Figure 8 The schematic diagram of the edge liquid storage groove of the lower cover plate of the VC vapor chamber of the present application.

[0045] Figure 9 The schematic diagram of the upper cover plate of the VC vapor chamber of the present application.

[0046] In the figure: 1, the upper cover plate of the VC vapor chamber; 2, the lower cover plate of the VC vapor chamber; 3, the cooling liquid filling port; 4, the exhaust port; 5, the cooling liquid circulation flow adjusting port; 6, the welding surface; 7, the initial liquid storage groove I; 8, the spiral curve etching groove; 9, the balanced temperature liquid storage groove; 10, the initial liquid storage groove II; 11, the initial liquid storage groove III; 12, the cooling liquid phase change outflow channel (5# etching groove); 13, the cooling liquid phase change backflow channel (6# etching groove); 14, the edge cooling liquid storage groove; 15, the high temperature zone; 16, the medium-high temperature zone; 17, the low temperature zone;

[0047] A, the cooling unit I; B, the cooling unit II; C, the cooling unit III; D, the etching groove communication zone I (1#-2# etching groove); E, the etching groove communication zone II (3#-4# etching groove); F, the cooling liquid flow direction. DETAILED DESCRIPTION

[0048] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] like Figure 1 As shown in the figure, the present invention provides an ultra-thin VC heat exchange plate with spiral curve etched channels. As can be seen from the figure, the structure of the VC heat exchange plate of the present invention only includes two components: the upper cover plate 1 of the VC heat exchange plate and the lower cover plate 2 of the VC heat exchange plate. It does not use 200-250 mesh capillary copper mesh, which effectively reduces the complexity of the process and the product cost.

[0050] like Figure 9 As shown, the top cover 1 is etched in a wave shape, which increases the heat dissipation area and enhances the heat dissipation effect while effectively reducing the weight.

[0051] like Figure 7 As shown, the upper end of the VC heat exchanger plate 2 is provided with a coolant filling port 3 and an exhaust port 4. The end face of the lower cover plate is a welding surface 6 (the surface that has not been etched). Three cooling units with spiral curve etched channels and an edge coolant reservoir 14 for receiving coolant are provided in the main body of the lower cover plate. The VC heat exchanger plate 1 and the VC heat exchanger plate 2 are fixed by welding.

[0052] Furthermore, in this embodiment, to ensure rapid cooling of the entire cooling area and control of the temperature difference within the cooling area to within the range of 1–3°C, the present invention sets up three cooling units: cooling unit IA (core cooling area), located at the same position as the high-temperature area of ​​the electronic component; cooling units IIB and IIIC, located adjacent to cooling unit IA on both sides. Each cooling unit includes an initial liquid storage tank, multiple spiral curve etching channels connected to the initial liquid storage tank, and multiple equilibrium temperature liquid storage tanks disposed on the spiral curve etching channels. The initial liquid storage tank, spiral curve etching channels, equilibrium temperature liquid storage tanks, and edge coolant storage tanks all employ a semi-etching method.

[0053] Infrared thermography, used to inspect electronic components such as circuit boards, can visually reveal the temperature, size, and shape of high, medium-high, and low temperature regions. Figure 2 The diagram shows the temperature range of the heat-generating electronic components. The high-temperature zone 15 is between 50 and 60°C, the medium-high temperature zone 16 is between 40 and 50°C, and the low-temperature zone 17 is between 35 and 40°C.

[0054] like Figure 3 , 4As shown, the setting of the spiral curve etching channel satisfies the Archimedes spiral curve formula:

[0055] r x ((ω / v) x θ + 1),

[0056] Wherein, the position of the circular initial liquid reservoir is the same as the high temperature area of the electronic component;

[0057] r is the radius of the high temperature area of the electronic component, which is taken as the radius of the initial liquid reservoir;

[0058] The cooling liquid in the initial liquid reservoir expands under heat, ω is the linear motion speed of the cooling liquid flowing from the center of the initial liquid reservoir to each outlet, v is the circular flow speed of the cooling liquid along the initial liquid reservoir, ω / v≈1 is basically unchanged, and the Archimedes spiral curve etching channel is designed by the 45° tangent method.

[0059] Thus, the Archimedes spiral curve formula is derived as ρ=r x (θ+1) under the condition of ω≈v, r is the known radius of the high temperature area; the Archimedes spiral curve belongs to the equal speed ratio and equal distance ratio spiral curve, under the condition of different temperatures in the high temperature area, the flow speed of the cooling liquid will change, but no matter how the flow speed of the cooling liquid changes, the linear motion speed ω and the circular flow speed v change at the same ratio, ω / v≈1 is basically unchanged, and the curve shape and the pitch are unchanged.

[0060] Accordingly, the Archimedes spiral curve etching channel is designed by the 45° tangent method, and this example is explained by taking the circular initial liquid reservoir as an example. In actual design, the number of etching channels can be adjusted according to the temperature control, the temperature uniformity of the heating surface, the heat dissipation efficiency and other requirements. The more the number of etching channels, the more accurate the temperature control, the higher the temperature uniformity of the heating surface, and the heat dissipation efficiency will be proportionally greatly improved according to the increase in the number of etching channels, which is suitable for the high temperature area of the electronic component, especially for the heat dissipation and temperature control of the electronic component with small and medium-sized heating area and obvious high, medium-high and low temperature area.

[0061] As shown in Figure 4 , the cooling liquid is vaporized under heat and flows from the circular initial liquid reservoir I 7 to the circular initial liquid reservoir II 10 and the initial liquid reservoir III 11, wherein F is the flow direction of the cooling liquid. The width of the spiral curve etching channel 8 is unchanged, the circular balance temperature liquid reservoir 9 is at the point of the 45° tangent of the Archimedes spiral curve, and the diameter is 1.5-2 times the width of the etching channel at the corresponding position, which is a key structure form for further uniform and balanced heat dissipation effect of the heat dissipation surface. There is no spiral curve in the initial liquid reservoir, which is shown by a dashed line to maintain the integrity of the spiral curve.

[0062] As shown in Figure 5As shown, when the cooling liquid is heated and vaporized, it flows from the circular initial liquid tank 17 to the edge cooling liquid tank 14, and the spiral curve etched channel 8 gradually widens. The circular balanced temperature liquid tank 9 is at the point of the 45° tangent of the Archimedes spiral curve, and the diameter is 1.5-2 times the width of the etched channel at the corresponding position, which is a key structure form for further uniform and balanced heat dissipation effect of the heat dissipation surface.

[0063] As shown in Figure 6 , the cooling liquid is liquefied by cooling, and flows back from the edge cooling liquid tank 14 to the circular initial liquid tank 17, and the spiral curve etched channel 8 gradually widens. The circular balanced temperature liquid tank 9 is at the point of the 45° tangent of the Archimedes spiral curve, and the diameter is 1.5-2 times the width of the etched channel at the corresponding position, which is a key structure form for further uniform and balanced heat dissipation effect of the heat dissipation surface.

[0064] As shown in Figure 7 , taking 3 cooling units and 6 spiral curve etched channels in each cooling unit as an example. Between the cooling unit IA (core unit, refer to the cooling liquid flow in Figure 3 ) and the cooling unit IIB and the cooling unit III C, there are 2 Archimedes spiral curve etched channels connected, that is, the number of channels N 连 connecting adjacent cooling units = 2 (i.e. etched channel communication area ID and etched channel communication area IE, 1#-2# etched channel and 3#-4# etched channel), and the width of the etched channel is unchanged. The cooling liquid of the initial liquid tank 17 flows to the initial liquid tank 10 and the initial liquid tank 11 respectively, in order to uniformly balance the temperature of the overall heating component.

[0065] In the cooling unit IA, N 出 = 1, that is, one cooling liquid phase change outflow channel 12 is directly connected with the edge cooling liquid tank 14 (5# etched channel), and the wider the involute etched channel is, the closer to the edge cooling liquid tank 14. In the cooling unit IA, N 回 = 1, that is, one cooling liquid phase change backflow channel 13 is connected with the edge cooling liquid tank 14 (6# etched channel), which is a communication channel for backflow to the initial liquid tank 17, and the wider the involute etched channel is, the closer to the initial liquid tank.

[0066] In the cooling unit IIB and the cooling unit III C, the outlets of the remaining 4 spiral curve heat dissipation etched channels are directly connected with the edge cooling liquid tank 14, that is, the number of cooling liquid phase change outflow channels N 出 = 4, and the wider the involute etched channel is, the closer to the edge cooling liquid tank 14, and the widest part is 2-3 times the narrowest part.

[0067] The cooling liquid in the initial liquid storage tank I 7, the initial liquid storage tank II 10 and the initial liquid storage tank III 11 is vaporized by heat, and gradually liquefied by the spiral curve etching channel, the balanced temperature liquid storage tank, and finally mixed in the cooling liquid edge storage tank 14 to form the liquid cooling liquid with uniform temperature, and then returned to the initial liquid storage tank I 7 through the cooling liquid phase change return channel 13. In this process, the cooling liquid at the cooling liquid phase change outflow channel 12 in the core cooling unit IA is still in a vaporized state due to the high temperature in this area, and flows out directly from the outlet to quickly reduce the temperature. The cooling liquid in other outflow channels flows out in a liquefied state or a vapor-liquid mixed state.

[0068] A cooling liquid circulation flow adjusting port 5 is arranged beside the inlet of the cooling liquid phase change return channel 13, which can increase the pressure of the cooling liquid returned to the initial liquid storage tank I 7 and ensure the normal circulation of the cooling liquid in the edge cooling liquid storage tank 14. The structure of the cooling liquid circulation flow adjusting port 5 can be a straight channel or a channel gradually increasing in the direction of the cooling liquid flow (as shown in Figure 8 The width ratio of the small end to the large end is 1:2-3, and the design is based on the pressure adjustment requirement and serves as a relay pressure increasing function.

[0069] VC uniform heating plate processing:

[0070] An Archimedes spiral curve cooling liquid phase change outflow etching channel, a cooling liquid phase change return etching channel, an initial liquid storage tank, a balanced temperature liquid storage tank, an edge cooling liquid storage tank, a cooling liquid filling port and an exhaust port are etched on the lower cover plate, and the upper cover plate is wavy in shape. The upper and lower cover plates are welded together by atomic diffusion welding. Vacuumization and cooling liquid filling are performed, and secondary degassing is performed. The liquid injection port and the exhaust port are welded to complete the manufacturing of the VC uniform heating plate.

[0071] The upper cover plate 1 and the lower cover plate 2 of the VC uniform heating plate can be made of copper alloy material with t=0.08-0.1 mm, so that the total thickness of the VC uniform heating plate is reduced to 0.16-0.2 mm, which is reduced by 40%-60% based on the original 0.3-0.4 mm. The 200-250 mesh capillary copper mesh is not used, and the upper cover plate 1 of the VC uniform heating plate is etched into a wavy shape (as shown in Figure 9 The wavy shape increases the heat dissipation area and enhances the heat dissipation effect, while effectively reducing the weight, and the overall weight is reduced by more than 30%.

[0072] VC uniform heating plate working principle:

[0073] The initial liquid tank I 7 is located in a high temperature zone. The cooling liquid is vaporized under the increased pressure caused by the heat. The cooling liquid flows through the 1st, 2nd, 3rd and 4th Archimedes spiral curve etching channels with the same width to the initial liquid tank II 10 and the initial liquid tank III 11, and then flows out of the etching channels (the etching channels gradually widen) through the remaining 4 Archimedes spiral curves of the initial liquid tank II 10 and the initial liquid tank III 11 respectively, and then flows to the edge cooling liquid storage tank 14. At this time, the cooling liquid is cooled and liquefied, and the pressure in the edge cooling liquid storage tank 14 increases. If the temperature of the high temperature zone where the initial liquid tank I 7 is located is too high, the cooling liquid can be directly vaporized, and then flows out of the etching channel 12 (the etching channel gradually widens) through the 5th Archimedes spiral curve, and then directly flows into the edge cooling liquid storage tank 14.

[0074] The liquefied cooling liquid in the edge cooling liquid storage tank 14 flows back to the initial liquid tank I 7 through the 6th Archimedes spiral curve etching channel 13. There is a cooling liquid circulation flow adjusting port 5 beside the inlet of the 6th etching channel. The cooling liquid circulation flow adjusting port 5 can increase the pressure of the cooling liquid flowing back to the initial liquid tank I 7, and can also ensure the normal circulation of the cooling liquid in the edge cooling liquid storage tank 14.

[0075] The Archimedes spiral curve etching channels between the initial liquid tank I 7 and the initial liquid tank II 10, the initial liquid tank III 11, the initial liquid tank II 10 and the initial liquid tank III 11 and the edge cooling liquid storage tank 14, and the initial liquid tank I 7 and the edge cooling liquid storage tank 14 are respectively in the form of etching channels with the same width, gradually widening and gradually narrowing. The etching channels can be adjusted according to the actual temperature control requirements of the electronic components.

[0076] There are several circular balance temperature liquid tanks on each Archimedes spiral curve etching channel. The width of the circular balance temperature liquid tank is 1.5-2 times the width of the etching channel at the corresponding position. The circular balance temperature liquid tank is used to balance the temperature difference at the local position. There are four cases.

[0077] ① The vaporized cooling liquid flows through the high temperature zone, balances the temperature of the high temperature zone through heat conduction, and then flows into the edge cooling liquid storage tank;

[0078] ② The vaporized cooling liquid flows through the low temperature zone, and then flows into the edge cooling liquid storage tank after the vaporized cooling liquid is liquefied by releasing heat when flowing through the low temperature zone;

[0079] ③ The liquefied cooling liquid flows through the high temperature zone, and then flows into the edge cooling liquid storage tank by vaporizing the cooling liquid to take away the heat of the high temperature zone;

[0080] ④ The liquefied cooling liquid flows through the low temperature zone, balances the temperature of the low temperature zone through heat conduction, and then flows into the edge cooling liquid storage tank.

[0081] The present application drives the cooling liquid from the initial liquid storage tank in high temperature area to the edge cooling liquid storage tank through the etching groove with equal width and gradually widened by the pressure difference between the vaporization of the cooling liquid in the initial liquid storage tank and the liquefaction of the cooling liquid in the edge cooling liquid storage tank, and the cooling liquid returns to the initial liquid storage tank I through the return inlet of the etching groove by the phase change of the cooling liquid along the 6# Archimedes spiral curve. In order to ensure the required pressure for the rapid circulation of the cooling liquid, the cooling liquid circulation flow regulating port is designed beside the 6# return inlet to increase the pressure of the cooling liquid returning to the initial liquid storage tank I, and at the same time to ensure the normal and rapid circulation of the cooling liquid in the edge cooling liquid storage tank. The number of Archimedes spiral curves, the number of direct outflow channels, the number of direct return channels, the number of communication channels between different initial liquid storage tanks, and the width size of the etching groove can be designed according to the temperature control and surface temperature difference control requirements of the product.

[0082] The above embodiments are only the preferred embodiments of the present application and are not used to limit the present application; although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An ultra-thin VC vapor chamber with a spiral curve etched channel, characterized in that, At least one cooling unit with spiral curve etching channel is arranged on the lower cover plate of the VC heat plate, the cooling unit comprises an initial liquid storage groove, a plurality of spiral curve etching channels connected with the initial liquid storage groove and a plurality of balanced temperature liquid storage grooves arranged on the spiral curve etching channels; the position of the initial liquid storage groove is the same as the high temperature area of the electronic component; The spiral curve etching channel is designed to satisfy the Archimedes spiral curve formula: ρ=r×((ω / ν)×θ+1), wherein, r is the radius of the high temperature area of the electronic component, which is taken as the radius of the initial liquid storage groove, ω is the linear motion speed of the cooling liquid flowing from the center of the initial liquid storage groove to each outlet, ν is the circular flow speed of the cooling liquid along the initial liquid storage groove, ω / ν≈1 is basically unchanged, and the Archimedes spiral curve etching channel is designed by taking θ as the 45° tangent method; The structure of the spiral curve etching channel is one or a combination of equal width, gradually narrowing or gradually widening; The total number of spiral curve etching grooves of the cooling unit is N, satisfying: N = number of cooling liquid phase change outflow channel N 出 + number of cooling liquid phase change backflow channel N 回 + number of channels connecting adjacent cooling units N 连 , wherein, when the cooling unit is one, the number of channels connecting adjacent cooling units N 连 = 0. The total thickness of the VC heat plate is 0.16-0.2 mm.

2. The ultra-thin VC vapor chamber with spiral curve etching channels of claim 1, wherein, The balanced temperature liquid storage groove is arranged at the point of the 45° tangent of the Archimedes spiral curve, and the diameter of the balanced temperature liquid storage groove is 1.5-2 times the width of the corresponding spiral curve etching channel.

3. The ultra-thin VC vapor chamber with spiral curve etching channels of claim 1, wherein, In the cooling unit, the spiral curve etching channel connecting the channels of adjacent cooling units is of equal width.

4. The ultra-thin VC vapor chamber with spiral curve etching channels of claim 1, wherein, In the cooling unit, the cooling liquid phase change outlet channel of the inflow edge cooling liquid storage groove is of gradually widening structure, and the cooling liquid phase change return channel returning to the initial liquid storage groove is of gradually narrowing structure, that is, gradually narrowing from the initial liquid storage groove to the edge cooling liquid storage groove.

5. The ultra-thin VC vapor chamber with spiral curve etching channels of claim 1, wherein, A cooling liquid circulation flow adjusting port is arranged beside the inlet of the cooling liquid phase change return channel.

6. The ultra-thin VC vapor chamber with spiral curve etching channels of claim 1, wherein, A wave-shaped groove is etched on the upper cover plate of the VC heat plate to increase the heat dissipation area.

7. A method of designing an ultra-thin VC vapor chamber with a spiral curve etched channel, characterized in that The method comprises the following steps: S1, taking the radius r of the high temperature area of the electronic component as the radius of the initial liquid storage groove, and the position of the initial liquid storage groove is the same as the high temperature area of the electronic component; S2, designing the cooling unit with spiral curve etching channel on the lower cover plate of the VC heat plate, so that the spiral curve etching channel satisfies the Archimedes spiral curve formula: ρ=r×((ω / ν)×θ+1), wherein, r is the radius of the high temperature area of the electronic component, ω is the linear motion speed of the cooling liquid flowing from the center of the initial liquid storage groove to each outlet, ν is the circular flow speed of the cooling liquid along the initial liquid storage groove, ω / ν≈1 is basically unchanged, and the Archimedes spiral curve etching channel is designed by taking θ as the 45° tangent method; the number of etching channels is designed according to the temperature control requirement of the electronic component and the surface temperature difference requirement of the heat dissipation surface; S3, when a plurality of cooling units are designed, the cooling unit corresponding to the core high temperature area position of the electronic component is the core cooling unit, the initial liquid storage grooves of adjacent cooling units are connected by spiral curve etching channels of equal width, and the number of connected etching channels is designed according to the temperature control requirement of the electronic component and the surface temperature difference requirement of the heat dissipation surface. S4, the spiral curve etching channel of the inflow edge cooling liquid storage tank gradually widens, and the spiral curve etching channel of the return flow to the initial storage tank gradually narrows; S5, each spiral curve etching channel has a plurality of balanced temperature storage tanks; S6, a cooling liquid circulation flow adjusting port is arranged beside the return flow inlet of the spiral curve etching channel of the initial storage tank returning to the core cooling unit; S7, the upper cover plate of the VC heat plate is etched in a wave shape and is welded and fixed with the lower cover plate of the VC heat plate.

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