Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided. A substrate processing apparatus (100) includes a substrate holding section (120) that holds a substrate (W), a processing tank (110) that stores a processing liquid (L) for immersion of the substrate (W) held by the substrate holding section (120), and a plurality of bubble generation tubes (136) that generate bubbles in the processing liquid (L) by supplying gas to the processing liquid (L). Among the plurality of bubble generation tubes (136), the flow rate of the gas supplied to outer bubble generation tubes (136a, 136d) located below a peripheral region of the substrate (W) immersed in the processing liquid (L) is greater than the flow rate of the gas supplied to inner bubble generation tubes (136b, 136c) located below a central region of the substrate (W).

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] As is well known, the substrates used in electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing equipment. The substrate can be processed by immersing it in a processing solution in a processing tank.

[0003] In recent years, with the miniaturization and / or three-dimensionalization of semiconductor devices formed on semiconductor substrates, the demand for uniform substrate processing has been increasing. For example, NAND devices with a three-dimensional structure have a multilayer structure with a three-dimensional bump and recess structure. When processing liquid is retained in the recesses of the bump and recess structure of the device pattern, the liquid replacement in the recesses is not sufficient. Therefore, in order to promote sufficient liquid replacement of the entire substrate including the recesses, a bubble generating tube is sometimes arranged below the substrate immersed in the processing tank, and bubbles are generated from the bubble generator to promote liquid replacement in the processing tank (for example, see Patent Documents 1 and 2).

[0004] In the substrate processing apparatus of Patent Document 1, when a substrate is processed by immersing it in a processing tank containing an aqueous solution of phosphoric acid, bubbles are generated from a bubble generator disposed below the substrate immersed in the processing tank. The bubble generator is cylindrical and has multiple nozzles (multiple openings). One end of the bubble generator is connected to a gas supply pipe that supplies water vapor to the bubble generator. The bubble generator generates water vapor-containing bubbles in the aqueous solution of phosphoric acid by blowing water vapor from each nozzle into the aqueous solution of phosphoric acid.

[0005] Furthermore, in the substrate processing apparatus of Patent Document 2, fluid is ejected from different regions along the arrangement direction of multiple substrates. This improves the uniformity of processing among the multiple substrates.

[0006] [Background Technical Documents]

[0007] [Patent Literature]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2020-021822

[0009] [Patent Document 2] Japanese Patent Application Publication No. 2020-113621 Summary of the Invention

[0010] [The problem the invention aims to solve]

[0011] In the substrate processing apparatus described in Patent Document 1, uneven processing of the substrate sometimes occurs. Furthermore, while the substrate processing apparatus described in Patent Document 2 can improve the uniformity of processing among multiple substrates, it suffers from the inability to uniformly process the in-plane surface of the substrate. If uneven processing occurs in the in-plane surface of the substrate, the characteristics of the semiconductor device will change, leading to a decrease in the yield of the semiconductor device. For example, when the silicon concentration in the etching solution is uneven, it will affect the etching selectivity of silicon nitride and silicon oxide. This effect is particularly pronounced when the substrate has a three-dimensional uneven shape.

[0012] The present invention was made in view of the aforementioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method capable of suppressing uneven in-surface processing of the substrate within a processing tank.

[0013] [Technical means to solve the problem]

[0014] According to one embodiment of the present invention, a substrate processing apparatus includes: a substrate holding section for holding at least one substrate; a processing tank for storing a processing liquid for impregnating the substrate held in the substrate holding section; and a plurality of bubble generating tubes for generating bubbles in the processing liquid by supplying gas to the processing liquid. Among the plurality of bubble generating tubes, the flow rate of gas supplied to the outer bubble generating tube is different from the flow rate of gas supplied to the inner bubble generating tube. The outer bubble generating tube is located below the outer peripheral region of the substrate impregnated in the processing liquid, and the inner bubble generating tube is located below the central region of the substrate.

[0015] In one embodiment, the plurality of bubble generating tubes extend parallel to the normal direction of the main surface of the substrate.

[0016] In one embodiment, among the plurality of bubble generating tubes, the flow rate of gas supplied to the outer bubble generating tube is greater than the flow rate of gas supplied to the inner bubble generating tube. The outer bubble generating tube is located below the outer peripheral region of the substrate immersed in the processing liquid, and the inner bubble generating tube is located below the central region of the substrate.

[0017] In one embodiment, the substrate processing apparatus further includes: a plurality of gas supply pipes connected to the plurality of bubble generating pipes; and a flow control mechanism for controlling the flow rate of gas flowing in the plurality of gas supply pipes. The flow control mechanism controls the flow rate of gas flowing in the plurality of gas supply pipes in such a manner that the flow rate of gas supplied to the outer bubble generating pipe is greater than the flow rate of gas supplied to the inner bubble generating pipe.

[0018] In one embodiment, the substrate processing apparatus further includes a pressure gauge that measures the pressure of gas flowing in a gas supply pipe connected to the outer bubble generating pipe and the pressure of gas flowing in a gas supply pipe connected to the inner bubble generating pipe.

[0019] In one embodiment, the substrate processing apparatus further includes a control unit for controlling the flow control mechanism. The control unit controls the flow rate of the gas flowing in the plurality of gas supply pipes based on the pressure of the gas flowing in the gas supply pipe connected to the outer bubble generating pipe and the pressure of the gas flowing in the gas supply pipe connected to the inner bubble generating pipe.

[0020] In one embodiment, the substrate processing apparatus further includes a control unit for controlling the flow control mechanism and a storage unit for storing control programs. The control unit controls the flow control mechanism according to the control programs.

[0021] In one embodiment, the substrate holding portion holds a plurality of substrates arranged in a column along a column direction. The inner bubble generating tube includes: an inner first pipe disposed below the central region of each of the plurality of substrates located on one side of the substrate column; and an inner second pipe separated from the inner first pipe and arranged in a straight line with the inner first pipe below the central region of each of the substrates located on the other side of the substrate column. The outer bubble generating tube includes: an outer first pipe disposed below the outer peripheral region of each of the plurality of substrates located on one side of the substrate column; and an outer second pipe separated from the outer first pipe and arranged in a straight line with the outer first pipe below the outer peripheral region of each of the substrates located on the other side of the substrate column.

[0022] In one embodiment, the substrate processing apparatus further includes a liquid ejection pipe disposed in the processing tank.

[0023] In one embodiment, the liquid ejection pipe is configured to extend parallel to the normal direction relative to the main surface of the substrate.

[0024] In one embodiment, the treatment solution comprises phosphoric acid solution.

[0025] According to another aspect of the invention, the substrate processing method includes: an immersion process in which a substrate is immersed in a processing liquid stored in a processing tank; and a bubble supply process in which bubbles are generated in the processing liquid by supplying gas to a plurality of bubble generating tubes disposed in the processing tank, and the bubbles are supplied to the substrate immersed in the processing liquid. The bubble supply process includes a flow rate uneven supply process, in which the flow rate of gas supplied to the outer bubble generating tube located below the outer peripheral region of the substrate is different from the flow rate of gas supplied to the inner bubble generating tube located below the central region of the substrate.

[0026] In one embodiment, the plurality of bubble generating tubes extend parallel to the normal direction of the main surface of the substrate.

[0027] In one embodiment, in the uneven flow supply process, the flow rate of gas supplied to the outer bubble generating tube located below the outer peripheral region of the substrate is greater than the flow rate of gas supplied to the inner bubble generating tube located below the central region of the substrate.

[0028] In one embodiment, the bubble supply process further includes: a flow equalization supply process, supplying gas to the outer bubble generating pipe and the inner bubble generating pipe at equal flow rates; and a pressure measurement process, wherein in the flow equalization supply process, the pressure of the gas flowing in the gas supply pipe connected to the outer bubble generating pipe and the pressure of the gas flowing in the gas supply pipe connected to the inner bubble generating pipe are measured; and the flow unevenness supply process sets the flow rate of the gas flowing in the gas supply pipe connected to the outer bubble generating pipe and the flow rate of the gas supplied to the gas supply pipe connected to the inner bubble generating pipe based on the measurement results in the pressure measurement process.

[0029] [Invention Effects]

[0030] According to the present invention, uneven processing of the substrate surface within the processing tank can be suppressed. Attached Figure Description

[0031] Figure 1 (a) and (b) are schematic perspective views of the substrate processing apparatus of this embodiment.

[0032] Figure 2 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0033] Figure 3 (a) is a schematic side view of the substrate processing apparatus of this embodiment, and (b) is a schematic top view of the substrate processing apparatus of this embodiment.

[0034] Figure 4 (a) is a schematic diagram showing the bubbles generated when gas is supplied to multiple bubble generating tubes at equal flow rates in the substrate processing apparatus, and (b) is a schematic diagram showing the flow of the processing liquid in the substrate processing apparatus of this embodiment.

[0035] Figure 5(a) is a schematic top view of the substrate processing apparatus of this embodiment, and Figure 5(b) is a schematic diagram showing the bubbles generated when gas is supplied to multiple bubble generating tubes at different flow rates in the substrate processing apparatus of this embodiment.

[0036] Figure 6 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0037] Figure 7 This is a flowchart of the substrate processing method of this embodiment.

[0038] Figure 8 (a) to (c) are schematic diagrams showing the changes in the substrate that has been etched by the substrate processing method of this embodiment.

[0039] Figure 9 This is a schematic top view and a partial enlarged view of the substrate processing apparatus of this embodiment.

[0040] Figure 10 (a) and (b) are schematic top views of the substrate processing apparatus of this embodiment.

[0041] Figure 11 This is a schematic top view of the substrate processing apparatus of this embodiment.

[0042] Figure 12 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0043] Figure 13 (a) is a schematic top view of the substrate processing apparatus of this embodiment, and (b) is a schematic diagram of the substrate processing apparatus of this embodiment.

[0044] Figure 14 (a) is a schematic diagram showing the bubbles generated when gas is supplied to multiple gas supply pipes at equal flow rates in the substrate processing apparatus, and (b) is a schematic diagram showing the flow of the processing liquid in the substrate processing apparatus of this embodiment.

[0045] Figure 15 (a) is a schematic top view of the substrate processing apparatus of this embodiment, and (b) is a schematic diagram showing the bubbles generated when gas is supplied to multiple gas supply pipes at different flow rates in the substrate processing apparatus of this embodiment.

[0046] Figure 16 This is a schematic diagram of the substrate processing apparatus of this embodiment. Detailed Implementation

[0047] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to the accompanying drawings. Furthermore, the same or equivalent parts are labeled with the same reference numerals in the drawings and will not be described again. In addition, in the specification of this application, for ease of understanding, mutually orthogonal X-axis, Y-axis, and Z-axis are sometimes described. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. Furthermore, in the specification of this application, for ease of understanding, mutually orthogonal x-axis, y-axis, and z-axis are sometimes described. Typically, the x-axis and y-axis extend parallel to the main surface of the substrate or base material, and the z-axis extends in the normal direction relative to the main surface of the substrate or base material.

[0048] Reference Figure 1 An embodiment of the substrate processing apparatus 100 of the present invention will be described. Figure 1 (a) and Figure 1 (b) is a schematic perspective view of the substrate processing apparatus 100 of this embodiment. Figure 1 (a) is a schematic perspective view of the substrate W before it is immersed in the processing liquid L in the processing tank 110. Figure 1 (b) is a schematic perspective view of the substrate W after it has been immersed in the processing liquid L in the processing tank 110.

[0049] The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by means of at least one of etching, surface treatment, property imparting, processing film formation, removal of at least a portion of the film, and cleaning.

[0050] The substrate W is in the form of a thin plate. Typically, the substrate W is a relatively thin, roughly circular plate. Substrate W includes, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for field emission displays (FEDs), substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0051] The substrate processing apparatus 100 processes the substrate W using a processing solution L. The substrate W is subjected to at least one of the following processes using the processing solution L: etching, surface treatment, property imparting, processing film formation, removal of at least a portion of the film, and cleaning.

[0052] The substrate processing apparatus 100 processes multiple substrates W in a concentrated manner using a processing liquid L. Alternatively, the substrate processing apparatus 100 can process multiple substrates W in units of a specific number using the processing liquid L. This specific number is an integer greater than or equal to 1. Here, the substrate processing apparatus 100 processes multiple substrates W in a concentrated manner.

[0053] For example, the substrate processing apparatus 100 performs an etching process on the surface of the patterned side of a substrate W made of a silicon substrate, forming a silicon oxide film (SiO2 film) and a silicon nitride film (SiN film). In this etching process, either the silicon oxide film or the silicon nitride film is removed from the surface of the substrate W.

[0054] The processing solution L contains phosphoric acid (H3PO4). Processing solution L may include, for example, an aqueous solution of phosphoric acid, a liquid containing additives in an aqueous solution of phosphoric acid, a mixed acid containing phosphoric acid, or a mixed acid containing both phosphoric acid and additives. For example, if processing solution L is a solution at approximately 157°C (hereinafter referred to as "phosphoric acid solution") consisting of approximately 89% by mass of phosphoric acid (H3PO4) and approximately 11% by mass of water (deionized water), it is possible to remove the silicon nitride film (SiN film) from the surface of substrate W. In other words, processing solution L uses a solution that is free of impurities and has a high temperature and high acid concentration; processing solution L removes silicon (SiN film) from the substrate W. 4+ Dissolution. Furthermore, the type of processing solution L is not particularly limited, as long as it can process the substrate W. Additionally, the temperature of the processing solution L is not particularly limited.

[0055] The substrate processing apparatus 100 includes a processing tank 110 and a substrate holding section 120. The processing tank 110 stores a processing liquid L for processing the substrate W.

[0056] The substrate holding portion 120 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding portion 120 is parallel to the Y direction. Multiple substrates W are arranged in a row along the Y direction. In other words, the multiple substrates W are arranged approximately parallel in the horizontal direction. Furthermore, the normal of each of the multiple substrates W extends in the Y direction, and the multiple substrates W extend in the X and Z directions respectively. The substrate holding portion 120 holds the substrate W and moves it. For example, the substrate holding portion 120 holds the substrate W and moves it vertically upwards or downwards.

[0057] Typically, the substrate holding section 120 holds multiple substrates W together. Here, the multiple substrates W form a substrate column arranged in a row along the Y direction. Therefore, the substrate holding section 120 holds multiple substrates W arranged in the substrate column. Alternatively, the substrate holding section 120 may also hold only one substrate W.

[0058] Specifically, the substrate holding section 120 includes a lifter. The substrate holding section 120 moves vertically upward or downward while holding a plurality of substrates W. By moving the substrate holding section 120 vertically downward, the plurality of substrates W held by the substrate holding section 120 are immersed in the processing liquid L stored in the inner tank 112.

[0059] Figure 1In (a), the substrate holding section 120 is located above the processing tank 110. The substrate holding section 120 holds a plurality of substrates W and lowers them vertically downward (in the Z direction). As a result, the plurality of substrates W are inserted into the processing tank 110.

[0060] like Figure 1 As shown in (b), when the substrate holding section 120 descends into the processing tank 110, a plurality of substrates W are immersed in the processing liquid L in the processing tank 110. The substrate holding section 120 immerses a plurality of substrates W that are neatly arranged at specific intervals in the processing liquid L stored in the processing tank 110.

[0061] The substrate holding portion 120 further includes a main plate 122 and a holding rod 124. The main plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from a main surface of the main plate 122 in the horizontal direction (Y direction). Figure 1 (a) and Figure 1 In (b), three retaining rods 124 extend horizontally from one main surface of the main body plate 122. Multiple substrates W are held in an upright position (vertical position) by the multiple retaining rods 124 abutting against the lower edge of each substrate W in a neatly arranged state with specific intervals.

[0062] The substrate holding section 120 also includes a lifting unit 126. The lifting unit 126 moves the main plate 122 to the processing position ( Figure 1 (b) shows the position and the retreat position ( Figure 1 The process position is maintained between the positions shown in (a) and (b) respectively. The processing position is the position where the plurality of substrates W in the substrate holding portion 120 are located within the processing tank 110, and the retraction position is the position where the plurality of substrates W in the substrate holding portion 120 are located above the processing tank 110. Therefore, the main body plate 122 is moved to the processing position by the lifting unit 126, and the plurality of substrates W held in the holding rod 124 are immersed in the processing liquid L.

[0063] Next, refer to Figure 1 and Figure 2 The substrate processing apparatus 100 of this embodiment will be described. Figure 2 This is a schematic diagram of the substrate processing apparatus 100.

[0064] like Figure 2 As shown, the substrate processing apparatus 100 also includes a gas supply unit 130 and a control unit 180. The gas supply unit 130 supplies gas to the processing tank 110. Specifically, the gas supply unit 130 supplies gas to the processing liquid L stored in the processing tank 110. By supplying gas to the processing tank 110 through the gas supply unit 130, the processing of the substrate W is promoted.

[0065] Gas is supplied to the treatment tank 110 through the gas supply unit 130, and bubbles are formed in the treatment liquid L. The bubbles formed in the treatment liquid L float in the treatment liquid L and reach the interface between the treatment liquid L and the gas (e.g., air or a specific ambient gas) in the treatment tank 110.

[0066] As the bubbles rise in the processing solution L, they come into contact with the surface of the substrate W. In this case, because the phosphoric acid is stirred by the bubbles, uneven silicon concentration within the phosphoric acid can be eliminated. Therefore, the uniformity of etching can be improved.

[0067] The gas supply unit 130 includes a gas supply source 132, a gas supply pipe 134, and a bubble generating pipe 136. The gas supply source 132 stores the gas. The gas is supplied from the gas supply source 132.

[0068] Gas supply pipe 134 connects gas supply source 132 to bubble generating pipe 136. Gas supplied from gas supply source 132 flows to bubble generating pipe 136 through gas supply pipe 134.

[0069] A bubble generating tube 136 is disposed within the processing tank 110. Typically, the bubble generating tube 136 is disposed on the bottom surface of the processing tank 110.

[0070] The gas supply unit 130 may also include a flow control mechanism 140. The flow control mechanism 140 is installed in the gas supply pipe 134. The flow control mechanism 140 controls at least one of the pressure and flow rate of the gas flowing in the gas supply pipe 134. For example, the flow control mechanism 140 controls the flow rate of the gas flowing in the gas supply pipe 134. As an example, the flow control mechanism 140 controls the gas flow rate according to the process while keeping the pressure of the gas flowing in the gas supply pipe 134 fixed at a certain pressure.

[0071] For example, the flow control mechanism 140 includes a nozzle or regulating valve for opening and closing the flow path of the gas supply line 134. The flow control mechanism 140 may include a pressure gauge and a flow meter.

[0072] As described above, the bubble generating pipe 136 is disposed within the processing tank 110. On the other hand, the gas supply source 132 and the flow control mechanism 140 are disposed outside the processing tank 110, and the gas supply pipe 134 is disposed outside the processing tank 110. Alternatively, at least a portion of the gas supply pipe 134 may be disposed within the processing tank 110, and the gas supply pipe 134 may be connected to the bubble generating pipe 136 within the processing tank 110.

[0073] The control device 180 controls various operations of the substrate processing apparatus 100. Typically, the control device 180 controls the gas supply unit 130. For example, the control device 180 controls the flow control mechanism 140.

[0074] The control device 180 includes a control unit 182 and a storage unit 184. The control unit 182 has a processor. The control unit 182 may have a central processing unit (CPU), for example. Alternatively, the control unit 182 may have a general-purpose computer.

[0075] Storage unit 184 stores data and computer programs. The data includes process recipe data. The process recipe data contains information representing multiple process recipes. Each of the multiple process recipes specifies the processing content and sequence of the substrate W.

[0076] Storage unit 184 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. Storage unit 184 may include removable media. Control unit 182 executes the computer program stored in storage unit 184 to perform substrate processing operations.

[0077] The storage unit 184 stores a computer program with a pre-defined sequence. The substrate processing apparatus 100 operates according to the sequence specified in the computer program.

[0078] The control unit 182 controls the gas supply unit 130. The control unit 182 controls the gas supply from the gas supply unit 130. Specifically, the control unit 182 controls the gas supply unit 130 to start and stop supplying gas. Additionally, the control unit 182 controls the flow control mechanism 140 to control the flow rate of the gas to be supplied to the bubble generating pipe 136 inside the processing tank 110. In one example, the control unit 182 can also control the gas supply to the bubble generating pipe 136 by controlling nozzles, adjusting valves, etc., provided on the gas supply pipe 134 located outside the processing tank 110.

[0079] Additionally, the control unit 182 controls the lifting unit 126. Under the control of the control unit 182, the main plate 122 rises and falls relative to the processing liquid L in the processing tank 110.

[0080] Next, refer to Figure 3 The substrate processing apparatus 100 of this embodiment will be described. Figure 3 (a) is a schematic side view of the substrate processing apparatus 100 according to this embodiment. Figure 3 (b) is a schematic top view of the substrate processing apparatus 100 of this embodiment.

[0081] like Figure 3 As shown in (a), the substrate holding portion 120 holds a plurality of substrates W arranged in a row in the Y direction. The plurality of substrates W are arranged at equal intervals. For example, the interval between adjacent substrates W is 2 mm or more and 20 mm or less.

[0082] The bubble generating tube 136 is located below the substrate W held in the substrate holding portion 120. Typically, the bubble generating tube 136 is disposed on the bottom surface of the processing tank 110. The bubble generating tube 136 extends in the Y direction.

[0083] The bubble generating tube 136 has multiple openings 136p. These openings 136p are arranged in a row within the bubble generating tube 136. The spacing between the multiple openings 136p is approximately equal to the spacing between the substrates W. The multiple openings 136p are located between the substrates W arranged in the alignment direction.

[0084] like Figure 3 As shown in (b), the bubble generating tube 136 includes bubble generating tubes 136a, 136b, 136c, and 136d. Bubble generating tubes 136a to 136d extend parallel to each other. Bubble generating tubes 136a to 136d extend in the Y direction. Bubble generating tubes 136a, 136b, 136c, and 136d are arranged sequentially from the -X direction to the +X direction.

[0085] Bubble generating tubes 136a and 136d are disposed below the outer peripheral region of the substrate W. For example, the outer peripheral region of the substrate W extends from a position with a radius of 0.6 times the horizontal radius relative to the center of the substrate W to the end of the substrate W. Bubble generating tubes 136a and 136d are examples of outer bubble generating tubes.

[0086] Bubble generating tube 136b is positioned closer to the center of substrate W when viewed from above than bubble generating tube 136a. Similarly, bubble generating tube 136c is positioned closer to the center of substrate W when viewed from above than bubble generating tube 136d. Therefore, bubble generating tubes 136b and 136c are positioned below the central region of substrate W. For example, the central region of substrate W is a region extending from the center of substrate W to a radius 0.6 times the horizontal radius relative to the center of substrate W. Bubble generating tubes 136b and 136c are examples of inner bubble generating tubes.

[0087] Multiple openings 136p are provided on the bubble generating tubes 136a to 136d. Here, the size and spacing of the multiple openings 136p are equal.

[0088] Bubble generating tubes 136a to 136d have the same configuration. Furthermore, in this specification, bubble generating tubes 136a to 136d are sometimes collectively referred to as bubble generating tube 136.

[0089] Gas supply source 132 is connected to gas supply pipes 134a to 134d respectively. Gas supply pipe 134a connects gas supply source 132 to bubble generating pipe 136a. Gas supply pipe 134b connects gas supply source 132 to bubble generating pipe 136b. Gas supply pipe 134c connects gas supply source 132 to bubble generating pipe 136c. Gas supply pipe 134d connects gas supply source 132 to bubble generating pipe 136d respectively. Thus, gas supply pipes 134a to 134d connect gas supply source 132 to bubble generating pipes 136a to 136d respectively.

[0090] A flow control mechanism 140a is installed in gas supply pipe 134a. Similarly, a flow control mechanism 140b is installed in gas supply pipe 134b. Likewise, a flow control mechanism 140c is installed in gas supply pipe 134c, and a flow control mechanism 140d is installed in gas supply pipe 134d. Thus, flow control mechanisms 140a to 140d are installed in gas supply pipes 134a to 134d respectively.

[0091] Therefore, for the bubble generating tube 136a, gas that has been flow-controlled by the flow control mechanism 140a is supplied from the gas supply source 132 through the gas supply tube 134a. Similarly, for the bubble generating tube 136b, gas that has been flow-controlled by the flow control mechanism 140b is supplied from the gas supply source 132 through the gas supply tube 134b.

[0092] Similarly, for the bubble generating tube 136c, gas that has been flow-controlled by the flow control mechanism 140c is supplied from the gas supply source 132 through the gas supply tube 134c. Additionally, for the bubble generating tube 136d, gas that has been flow-controlled by the flow control mechanism 140d is supplied from the gas supply source 132 through the gas supply tube 134d.

[0093] The flow rate of the gas supplied to the bubble generating tubes 136a-136d can be controlled separately by the flow control mechanisms 140a-140d. The flow control mechanisms 140a-140d can ensure that the flow rates of the gas supplied to the bubble generating tubes 136a-136d are equal. Alternatively, the flow control mechanisms 140a-140d can ensure that the flow rates of the gas supplied to the bubble generating tubes 136a-136d are different.

[0094] Furthermore, gas is supplied to the bubble generating pipes 136a-136d from the same gas supply source 132. However, gas can also be supplied to the bubble generating pipes 136a-136d from different gas supply sources. In this case, a predetermined flow rate of gas can also be supplied to the bubble generating pipes 136a-136d from the gas supply source 132.

[0095] Next, refer to Figures 1-4 The substrate processing apparatus 100 of this embodiment will be described. Figure 4 (a) and Figure 4 (b) is a schematic diagram of the substrate processing apparatus 100. Figure 4 (a) represents the bubbles generated when gas is supplied to multiple bubble generation tubes 136 at equal flow rates in the substrate processing apparatus 100. Figure 4 (b) indicates the flow of the processing liquid L during bubble generation in the substrate processing apparatus 100 of this embodiment. Here, the flow control mechanisms 140a to 140d ensure that the flow rates of the gas supplied to the bubble generation tubes 136a to 136d are equal. Furthermore, Figure 4 (a) and Figure 4 (b) represents the imaginary center line CL that extends vertically through the center of the substrate W.

[0096] like Figure 4 As shown in (a), if gas is supplied to the bubble generating pipes 136a to 136d respectively, bubbles will be generated from each of the bubble generating pipes 136a to 136d into the processing liquid L. Bubbles are generated in the processing liquid L by ejecting gas from the bubble generating pipes 136a to 136d into the processing tank 110. The bubbles generated in the processing liquid L float in the processing liquid L and reach the interface between the processing liquid L and the gas (e.g., air or a specific ambient gas) in the processing tank 110.

[0097] As the bubbles rise in the processing solution L, they come into contact with the surface of the substrate W. In this case, because the phosphoric acid is stirred by the bubbles, the uneven silicon concentration within the phosphoric acid is eliminated, thus improving the uniformity of etching.

[0098] The amount of bubbles generated from bubble generating tube 136a is less than the amount of bubbles generated from bubble generating tube 136b. Similarly, the amount of bubbles generated from bubble generating tube 136d is less than the amount of bubbles generated from bubble generating tube 136c.

[0099] Figure 4 (b) illustrates the flow F of the treatment liquid L under the influence of bubbles generated in bubble generating pipes 136a-136d. As the bubbles rise and reach the interface between the treatment liquid L and the gas (e.g., air or a specific ambient gas) within the treatment tank 110, the treatment liquid L flows outward in both the -X and +X directions above the treatment liquid L. Then, the treatment liquid L forms a downward flow along the sidewalls of the treatment tank 110 in both the -X and +X directions.

[0100] Therefore, the bubble generating pipes 136a and 136d located outside the processing tank 110 are more affected by the downward flow of the processing liquid L from above to below the processing tank 110 compared to the bubble generating pipes 136b and 136c located inside the processing tank 110. Consequently, even if the gas flow rates supplied to the bubble generating pipes 136a to 136d are equal, the etching amount of bubbles generated from the bubble generating pipes 136a to 136d is not uniform. For example, sometimes the amount of bubbles generated from the bubble generating pipes 136a and 136d located outside the processing tank 110 is less than the amount of bubbles generated from the bubble generating pipes 136b and 136c located inside the processing tank 110.

[0101] Next, refer to Figure 5(a) , 5(b) The substrate processing apparatus 100 of this embodiment will be described. FIG5(a) is a schematic top view of the substrate processing apparatus 100 of this embodiment, and FIG5(b) is a schematic diagram of the substrate processing apparatus 100 of this embodiment in which bubbles are generated by supplying gas to a plurality of bubble generating tubes 136 at different flow rates.

[0102] As shown in Figure 5(a), flow control mechanisms 140a to 140d control the flow rate of gas supplied to bubble generating pipes 136a to 136d in different ways. Specifically, flow control mechanisms 140a and 140b control the flow rate of gas flowing in gas supply pipes 134a and 134b by ensuring that the flow rate of gas supplied to bubble generating pipe 136a is greater than the flow rate of gas supplied to bubble generating pipe 136b. Furthermore, flow control mechanisms 140c and 140d control the flow rate of gas flowing in gas supply pipes 134c and 134d by ensuring that the flow rate of gas supplied to bubble generating pipe 136d is greater than the flow rate of gas supplied to bubble generating pipe 136c.

[0103] Therefore, the flow rate of gas supplied to the outer bubble generating pipe 136a and bubble generating pipe 136d in the processing tank 110 is greater than the flow rate of gas supplied to the inner bubble generating pipe 136b and bubble generating pipe 136c in the processing tank 110.

[0104] As shown in Figure 5(b), if gas is supplied to the bubble generating pipes 136a to 136d respectively, bubbles will be generated in the treated liquid L. Here, the amount of bubbles generated from bubble generating pipe 136a, the amount of bubbles generated from bubble generating pipe 136b, the amount of bubbles generated from bubble generating pipe 136c, and the amount of bubbles generated from bubble generating pipe 136d are approximately equal. In detail, bubbles of approximately the same size are generated into the treated liquid L from bubble generating pipes 136a to 136d at approximately the same frequency.

[0105] In this way, the flow rates of the gas supplied to the bubble generating tubes 136a to 136d can be made different in such a way that the amount of bubbles generated from the bubble generating tubes 136a to 136d is approximately equal.

[0106] Furthermore, the upper limit of the gas flow rate supplied to the bubble generating pipes 136a to 136d is set such that the processing liquid L in the processing tank 110 will not overflow. For example, the upper limit of the gas flow rate supplied to the bubble generating pipes 136a to 136d is set based on the volume of the processing tank 110, the amount of processing liquid L, the temperature of the processing liquid L, etc. In addition, the lower limit of the gas flow rate supplied to the bubble generating pipes 136a to 136d is set based on whether bubbles are generated in the bubble generating pipes 136a to 136d.

[0107] In the substrate processing apparatus 100 of this embodiment, the flow rate of gas supplied to the outer bubble generating tubes 136a and 136d in the processing tank 110 is greater than the flow rate of gas supplied to the inner bubble generating tubes 136b and 136c in the processing tank 110. Therefore, the amount of bubbles generated from the bubble generating tubes 136a to 136d can be made approximately equal, thereby suppressing uneven processing across the entire surface of the substrate W.

[0108] Next, refer to Figure 6 The substrate processing apparatus 100 of this embodiment will be described. Figure 6 This is a schematic diagram of the substrate processing apparatus 100 of this embodiment.

[0109] like Figure 6 As shown, the gas supply unit 130 includes a gas supply source 132, a gas supply pipe 134, a bubble generating pipe 136, and a flow control mechanism 140. Here, gas is supplied to the bubble generating pipes 136a to 136d arranged in the processing tank 110, and bubbles are generated from each of the bubble generating pipes 136a to 136d into the processing liquid L, while bubbles are supplied to the multiple substrates W immersed in the processing liquid L.

[0110] For example, the gas supply pipe 134 has a common pipe 134S and individual pipes 134T. The individual pipes 134T include gas supply pipes 134a, 134b, 134c, and 134d.

[0111] A common piping 134S connects the gas supply source 132 to individual piping 134T. Specifically, the upstream end of the common piping 134S is connected to the gas supply source 132. The gas supply source 132 supplies gas to the common piping 134S. The downstream end of the common piping 134S is connected to the upstream end of gas supply pipes 134a to 134d.

[0112] The downstream end of gas supply pipe 134a is connected to bubble generating pipe 136a. The downstream end of gas supply pipe 134b is connected to bubble generating pipe 136b. The downstream end of gas supply pipe 134c is connected to bubble generating pipe 136c. The downstream end of gas supply pipe 134d is connected to bubble generating pipe 136d. Therefore, gas is supplied from gas supply source 132 to bubble generating pipes 136a to 136d through common piping 134S and gas supply pipes 134a to 134d respectively.

[0113] The flow control mechanism 140 has a common control mechanism 140S and individual control mechanisms 140T. The individual control mechanism 140T includes flow control mechanism 140a, flow control mechanism 140b, flow control mechanism 140c, and flow control mechanism 140d.

[0114] The common control mechanism 140S includes a valve 141, a regulator 142, and a pressure gauge 143. The valve 141, regulator 142, and pressure gauge 143 are arranged sequentially from upstream to downstream in the common piping 134S. When the valve 141 is open, gas flows from the gas supply source 132 into the common piping 134S. The regulator 142 adjusts the pressure of the gas passing through the common piping 134S to a predetermined value. The pressure gauge 143 detects the pressure in the common piping 134S. The pressure gauge 143 is connected between the regulator 142 and the individual piping 134T.

[0115] A flow control mechanism 140a controls the flow rate of gas supplied from a gas supply source 132. The flow-controlled gas is supplied to a bubble generating pipe 136a via a gas supply pipe 134a. For example, the flow control mechanism 140a includes an adjusting valve 145, a flow meter 146, a filter 147, and a valve 148. The adjusting valve 145, flow meter 146, filter 147, and valve 148 are sequentially arranged in the gas supply pipe 134a from upstream to downstream.

[0116] The regulating valve 145 adjusts the opening degree to regulate the flow rate of gas supplied to the bubble generating pipe 136a. "Flow rate" refers, for example, to the amount of gas passing through a unit area per unit time. Specifically, the regulating valve 145 includes a valve body (not shown) with an internal valve seat, a valve body that opens and closes the valve seat, and a brake (not shown) that moves the valve body between an open position and a closed position.

[0117] The regulating valve 145 adjusts the gas flow rate based on the measurement results of the flow meter 146. Alternatively, the regulating valve 145 could also be the regulating valve of a mass flow controller (MFC).

[0118] Flow meter 146 measures the flow rate of gas flowing in gas supply pipe 134a. Filter 147 filters the gas flowing in gas supply pipe 134a.

[0119] Valve 148 opens and closes the gas supply pipe 134a. Therefore, valve 148 switches between supplying gas from the gas supply pipe 134a to the bubble generating pipe 136a and stopping the supply of gas from the gas supply pipe 134a to the bubble generating pipe 136a.

[0120] Flow control mechanism 140b controls the flow rate of gas supplied from gas supply source 132. Flow control mechanism 140c controls the flow rate of gas supplied from gas supply source 132. Similarly, flow control mechanism 140d controls the flow rate of gas supplied from gas supply source 132. The configurations of flow control mechanisms 140b to 140d are the same as those of flow control mechanism 140a.

[0121] Figure 6 The substrate processing apparatus 100 shown also includes a plurality of pressure gauges 149. The plurality of pressure gauges 149 include pressure gauge 149a, pressure gauge 149b, pressure gauge 149c and pressure gauge 149d.

[0122] Pressure gauge 149a detects the gas pressure in gas supply pipe 134a. Pressure gauge 149b detects the gas pressure in gas supply pipe 134b. Pressure gauge 149c detects the gas pressure in gas supply pipe 134c. Pressure gauge 149d detects the gas pressure in gas supply pipe 134d.

[0123] The substrate processing apparatus 100 also includes multiple exhaust mechanisms 134o, 134p, 134q, and 134r. Exhaust mechanism 134o is connected to gas supply pipe 134a. Exhaust mechanism 134p is connected to gas supply pipe 134b. Exhaust mechanism 134q is connected to gas supply pipe 134c. Exhaust mechanism 134r is connected to gas supply pipe 134d.

[0124] The exhaust mechanisms 134o to 134r respectively discharge gas to the outside. Specifically, the exhaust mechanisms 134o to 134r each include an exhaust pipe and a valve. The exhaust pipe is equipped with a valve. The valve opens and closes the exhaust pipe. One end of the exhaust pipe is connected to the gas supply pipe 134. When the valve is opened, gas is discharged to the outside from the gas supply pipe 134 through the exhaust pipe.

[0125] In this way, the flow rate of the gas flowing in the gas supply pipes 134a to 134d can be appropriately controlled. Therefore, the amount of bubbles generated from the bubble generating pipes 136a to 136d can be appropriately controlled.

[0126] As described above, the amount of bubbles generated from the bubble generating pipes 136a to 136d varies according to the flow rate of the gas flowing in the gas supply pipes 134a to 134d. When the flow control mechanisms 140a to 140d control the flow rate of the gas flowing in the gas supply pipes 134a to 134d, the control device 180 ( Figure 2 Alternatively, the flow control mechanisms 140a to 140d can be controlled according to the values ​​preset in the control program. Or, the control device 180 can supply gas to the substrate W to be processed, measure the flow rate or pressure of the gas flowing in the gas supply pipes 134a to 134d, and set the flow rate of the gas that should flow in the gas supply pipes 134a to 134d.

[0127] In addition, the flow rate of the gas flowing in the gas supply pipes 134a to 134d can be controlled by the bubbles generated in the imaging processing tank 110.

[0128] Next, refer to Figures 1 to 7 The substrate processing method of this embodiment will be briefly described. Figure 7 This is a flowchart of the substrate processing method of this embodiment.

[0129] like Figure 7 As shown, in step S102, the substrate holding part 120 holds the substrate W as it descends into the processing tank 110. Thus, the substrate W is immersed in the processing liquid L within the processing tank 110.

[0130] In step S104, the flow control mechanisms 140a-140d control the flow rate of the gas flowing in the gas supply pipes 134a-134d in a manner that the flow rate of the gas supplied to each bubble generating pipe 136a-136d is equal (flow equalization supply process: refer to...). Figure 4 ).

[0131] In step S106, the pressure of the gas in the gas supply pipes 134a-134d is measured while ensuring that the flow rates of the gas supplied to each bubble generating pipe 136a-136d are equal (pressure measurement process). The pressure of the gas in the gas supply pipes 134a-134d becomes an indicator of the ease with which bubbles are generated within the processing tank 110. For example, Figure 6 The pressure gauges 149a to 149d shown measure the pressure of the gas in the gas supply pipes 134a to 134d.

[0132] In step S108, the flow rate of the gas that should flow in the gas supply pipes 134a to 134d is obtained based on the gas pressure of each gas supply pipe 134a to 134d (flow rate acquisition process). Typically, the control device 180 obtains the flow rate of the gas that should flow in the gas supply pipes 134a to 134d based on the measurement results of the pressure gauges 149a to 149d.

[0133] In step S110, the flow control mechanisms 140a to 140d control the flow rate of the gas flowing in the gas supply pipes 134a to 134d based on the obtained gas flow rate, in a manner that the gas flow rate supplied to each bubble generating pipe 136a to 136d is different (for uneven flow supply engineering: refer to...). Figure 5(a) , 5(b) In this case, flow control mechanisms 140a to 140d control the flow rate of gas flowing in gas supply pipes 134a to 134d by varying the flow rates of gas supplied to bubble generating pipes 136a to 136d. For example, flow control mechanisms 140a and 140b control the flow rate of gas flowing in gas supply pipes 134a and 134b by varying the flow rate of gas supplied to bubble generating pipe 136a. Similarly, flow control mechanisms 140c and 140d control the flow rate of gas flowing in gas supply pipes 134c and 134d by varying the flow rate of gas supplied to bubble generating pipe 136d. By varying the flow rates of gas supplied to bubble generating pipes 136a to 136d, the amount of bubbles generated from bubble generating pipes 136a to 136d can be made approximately equal. Based on the above, even if the substrate W, the processing environment, and the processing liquid L are different, the amount of bubbles generated from the bubble generation tubes 136a to 136d can be approximately equal, thereby suppressing uneven processing of the substrate W.

[0134] Furthermore, the substrate processing apparatus 100 and substrate processing method of this embodiment are suitable for manufacturing NAND devices.

[0135] Next, refer to Figures 1 to 8 The substrate processing method of this embodiment will be briefly described. Figure 8 (a)~ Figure 8 (c) is a schematic diagram of the substrate W processed by the substrate processing method of this embodiment. Figure 8 (a)~ Figure 8 (c) is a schematic enlarged cross-sectional view of substrate W cut along the xz section.

[0136] like Figure 8 As shown in (a), the substrate W has a base material S and a multilayer structure M. The multilayer structure M is a three-dimensional multilayer structure in which multiple multilayers containing silicon nitride layers are opposed to each other with gaps D. Here, the substrate W is arranged to extend in the xy plane. The multilayer structure M is disposed on the upper surface of the base material S. The multilayer structure M extends from the upper surface of the base material S in the z direction. Gap D is formed in the multilayer structure M. Here, the gap D reaches the base material S, exposing a portion of the base material S.

[0137] The stacked structure M has multiple silicon oxide layers Ma and multiple silicon nitride layers Ea. The silicon oxide layers Ma and silicon nitride layers Ea are stacked alternately. The multiple silicon oxide layers Ma and silicon nitride layers Ea extend parallel to the upper surface of the substrate S.

[0138] like Figure 8 As shown in (b), the substrate W is processed in the substrate processing apparatus 100 using a processing solution L. For example, if the silicon nitride layer Ea of the substrate W is etched by phosphoric acid treatment, the silicon nitride layer Ea can be locally removed.

[0139] like Figure 8 As shown in (c), the silicon nitride layer Ea is completely removed from the stacked structure M by further phosphoric acid treatment, leaving the silicon oxide layer Ma and the silicon nitride layer Ea that were not etched by the treatment solution L in the stacked structure M. The silicon nitride layer Ea is etched from the substrate W by phosphoric acid treatment in the manner described above.

[0140] At this point, if bubbles are generated in the processing solution L such that the entire surface of the substrate W is in contact with the bubbles, the replacement of the processing solution L by the bubbles on the surface of the substrate W can be promoted. Therefore, uneven processing within the surface of the substrate W can be suppressed.

[0141] also, Figures 2-6 In the substrate processing apparatus 100 shown, bubble generating tubes 136a to 136d supply bubbles to all substrates W held in the substrate holding section 120, but this embodiment is not limited to this. Furthermore, Figures 2-6 In the substrate processing apparatus 100 shown, the flow control mechanisms 140a to 140d control the flow rate of the gas supplied to the bubble generating tubes 136a to 136d, respectively, but this embodiment is not limited to this.

[0142] Next, refer to Figures 1-10 The substrate processing apparatus 100 of this embodiment will be described. Figure 9 , Figure 10 (a) and Figure 10 (b) is a schematic top view of the substrate processing apparatus 100 of this embodiment.

[0143] like Figure 9 As shown, bubble generating pipes 136a to 136h are arranged in the processing tank 110. Bubble generating pipes 136a to 136d are arranged on the -Y direction side of the processing tank 110, and bubble generating pipes 136e to 136f are arranged on the +Y direction side of the processing tank 110. Bubble generating pipes 136a to 136d are arranged at equal intervals from the -X direction side to the +X direction side on the -Y direction side of the processing tank 110. Similarly, bubble generating pipes 136e to 136f are arranged at equal intervals from the -X direction side to the +X direction side on the +Y direction side of the processing tank 110. Bubble generating pipes 136a, 136d, 136e, and 136h are examples of outer bubble generating pipes, and bubble generating pipes 136b, 136c, 136f, and 136g are examples of inner bubble generating pipes.

[0144] Bubble generating pipes 136a and 136e are arranged in a straight line on the -X direction side of the processing tank 110. In addition, bubble generating pipes 136b and 136f are arranged in a straight line further inside than bubble generating pipes 136a and 136e.

[0145] Similarly, bubble generating pipes 136d and 136h are arranged in a straight line on the +X direction side of the processing tank 110. In addition, bubble generating pipes 136c and 136g are arranged in a straight line further inward than bubble generating pipes 136d and 136h.

[0146] Bubble generating pipes 136a and 136d are examples of the first outer piping, and bubble generating pipes 136e and 136h are examples of the second outer piping. In addition, bubble generating pipes 136b and 136c are examples of the first inner piping, and bubble generating pipes 136f and 136g are examples of the second inner piping.

[0147] For bubble generating tube 136a, gas that has been flow-controlled by flow control mechanism 140a is supplied via gas supply tube 134a. Similarly, for bubble generating tubes 136b to 136h, gas that has been flow-controlled by flow control mechanism 140b to 140h is supplied via gas supply tubes 134b to 134h.

[0148] Here, two bubble generating tubes are arranged in a straight line. Viewed from above, the boundary between the two linearly arranged bubble generating tubes is located between two adjacent substrates W. One of these bubble generating tubes extends beyond the midpoint between the two adjacent substrates W, and this one bubble generating tube has an opening 136p at the midpoint between the two adjacent substrates W.

[0149] For example, bubble generating tubes 136d and 136h are arranged in a straight line. Viewed from above, the boundary between bubble generating tubes 136d and 136h is located between two adjacent substrates W. Bubble generating tube 136d extends beyond the midpoint between the two adjacent substrates W, and an opening 136p is provided on bubble generating tube 136d at the midpoint between the two adjacent substrates W.

[0150] In the substrate processing apparatus 100 of this embodiment, gases with different flow rates are supplied to bubble generating tubes 136a-136d located on the -Y direction side and bubble generating tubes 136e-136h located on the +Y direction side relative to a plurality of substrates W arranged along the Y direction. As a result, bubbles can be generated approximately evenly within the surface of the substrate W, thus suppressing processing unevenness within the surface of the substrate W.

[0151] Furthermore, there exists a situation where, when gas is supplied from gas supply pipes 134a to 134h to bubble generating pipes 136a to 136h, the flow rate on the upstream side of bubble generating pipes 136a to 136h is greater than the flow rate on the downstream side. In this case, in the substrate processing apparatus 100 of this embodiment, by supplying gas to bubble generating pipes 136a to 136d located on the -Y direction side and bubble generating pipes 136e to 136f located on the +Y direction side relative to the substrates W arranged along the Y direction, gas can be supplied to one end and the other end of the substrate row of the substrates W arranged along the Y direction at a relatively high flow rate. Therefore, bubbles can be generated evenly in the arrangement direction of the substrates W, thereby suppressing processing unevenness in the arrangement direction of the substrates W.

[0152] also, Figure 9 In the substrate processing apparatus 100 shown, flow control mechanisms 140a to 140h are respectively provided corresponding to bubble generating tubes 136a to 136h, but this embodiment is not limited to this. The flow rate of gas supplied to multiple bubble generating tubes 136 can also be controlled by one flow control mechanism 140.

[0153] like Figure 10 As shown in (a), bubble generating pipes 136a to 136d extending in the Y direction are arranged in the processing tank 110. The bubble generating pipes 136a to 136d are arranged sequentially at equal intervals from the -X direction side to the +X direction side.

[0154] The gas supply pipe 134 includes a common pipe 134s, a common pipe 134t, and gas supply pipes 134a to 134d. The common pipe 134s connects the gas supply source 132 to the flow control mechanism 140a. The gas supply pipe 134a connects the flow control mechanism 140a to the bubble generating pipe 136a, and the gas supply pipe 134d connects the flow control mechanism 140a to the bubble generating pipe 136d.

[0155] A common piping 134t connects the gas supply source 132 to the flow control mechanism 140b. The gas supply pipe 134b connects the flow control mechanism 140b to the bubble generating pipe 136c, and the gas supply pipe 134c connects the flow control mechanism 140b to the bubble generating pipe 136c.

[0156] Therefore, gas with a flow rate controlled by flow control mechanism 140a is supplied to bubble generating pipes 136a and 136d. Additionally, gas with a flow rate controlled by flow control mechanism 140b is supplied to bubble generating pipes 136b and 136c.

[0157] Therefore, the flow rate of gas supplied to the outer bubble generating tubes 136a and 136d in the processing tank 110 can be greater than the flow rate of gas supplied to the inner bubble generating tubes 136b and 136c in the processing tank 110. As a result, the amount of bubbles generated from the bubble generating tubes 136a to 136d can be made approximately equal, thereby suppressing uneven processing across the entire surface of the substrate W.

[0158] also, Figures 1-10 In the substrate processing apparatus 100 shown in (a), bubbles generated from four bubble generating tubes 136 are supplied to each substrate W, but this embodiment is not limited to this. Bubbles generated from a number of bubble generating tubes 136 other than four may also be supplied to each substrate W. For example, bubbles generated from six bubble generating tubes 136 may also be supplied to each substrate W.

[0159] like Figure 10 As shown in (b), bubble generating pipes 136a to 136f are arranged in the processing tank 110. The bubble generating pipes 136a to 136f are arranged sequentially at equal intervals from the -X direction side to the +X direction side in the processing tank 110. Bubble generating pipes 136a, 136b, 136e, and 136f are examples of outer bubble generating pipes, and bubble generating pipes 136c and 136d are examples of inner bubble generating pipes.

[0160] Gas supply source 132 is connected to common piping 134s, common piping 134t, and common piping 134u. Common piping 134s is connected to gas supply pipe 134a and gas supply pipe 134b. Gas supply pipe 134a connects common piping 134s to bubble generating pipe 136a, and gas supply pipe 134b connects common piping 134s to bubble generating pipe 136b.

[0161] Common piping 134t is connected to gas supply piping 134c and gas supply piping 134d. Gas supply piping 134c connects common piping 134t to bubble generating piping 136c, and gas supply piping 134d connects common piping 134t to bubble generating piping 136d. Similarly, common piping 134u is connected to gas supply piping 134e and gas supply piping 134f. Gas supply piping 134e connects common piping 134u to bubble generating piping 136e, and gas supply piping 134f connects common piping 134u to bubble generating piping 136f.

[0162] Here, a flow control mechanism 140a is provided on the common piping 134s. Therefore, the flow rate of the gas supplied to the bubble generating pipe 136a and the bubble generating pipe 136b can be controlled by the flow control mechanism 140a.

[0163] Furthermore, a flow control mechanism 140b is provided on the common piping 134t. Therefore, the flow rate of gas supplied to the bubble generating pipes 136c and 136d can be controlled by the flow control mechanism 140b. Similarly, a flow control mechanism 140c is provided on the common piping 134u. Therefore, the flow rate of gas supplied to the bubble generating pipes 136e and 136f can be controlled by the flow control mechanism 140c.

[0164] also, Figures 2 to 10 In the substrate processing apparatus 100 shown, the bubble generating pipe 136 is connected to a gas supply pipe 134 extending from one side of the processing tank 110, but this embodiment is not limited to this. The bubble generating pipe 136 may also be connected to gas supply pipes 134 extending from both sides of the processing tank 110.

[0165] Next, refer to Figures 1 to 11 The substrate processing apparatus 100 of this embodiment will be described. Figure 11 This is a schematic top view of the substrate processing apparatus 100 of this embodiment.

[0166] like Figure 11As shown, bubble generating pipes 136a to 136h are arranged in the processing tank 110. Bubble generating pipes 136a to 136d are connected to gas supply pipes 134a to 134d extending from the -Y direction side of the processing tank 110 towards the +Y direction, and bubble generating pipes 136e to 136f are connected to gas supply pipes 134e to 134f extending from the +Y direction side of the processing tank 110 towards the -Y direction.

[0167] Bubble generating tubes 136a, 136e, 136b, 136f, 136c, 136g, 136d, and 136h are arranged sequentially at equal intervals from the -X direction side to the +X direction side in the processing tank 110. Bubble generating tubes 136a, 136d, 136e, and 136h are examples of outer bubble generating tubes, while bubble generating tubes 136b, 136c, 136f, and 136g are examples of inner bubble generating tubes.

[0168] Gas supply source 132 is connected to gas supply pipes 134a to 134d, respectively. Therefore, gas supply pipes 134a to 134d connect gas supply source 132 to bubble generating pipes 136a to 136d, respectively. Additionally, gas supply source 132 is connected to gas supply pipes 134e to 134h, respectively. Therefore, gas supply pipes 134e to 134h connect gas supply source 132 to bubble generating pipes 136e to 136h, respectively. Flow control mechanisms 140a to 140h are respectively mounted on gas supply pipes 134a to 134h.

[0169] In this embodiment, the flow rate of gas supplied to the outer bubble generating pipes 136a and 136h in the processing tank 110 is greater than the flow rate of gas supplied to the inner bubble generating pipes 136b to 136g in the processing tank 110. Furthermore, the flow rate of gas supplied to the second outer bubble generating pipes 136e and 136d in the processing tank 110 is greater than the flow rate of gas supplied to the innermost bubble generating pipes 136b, 136c, 136f, and 136g in the processing tank 110. Additionally, the flow rate of gas supplied to the second outer bubble generating pipes 136b and 136g in the processing tank 110 is greater than the flow rate of gas supplied to the innermost bubble generating pipes 136c and 136f. In this way, by controlling the flow rate of the gas supplied to the bubble generating tubes 136a to 136h in stages, the amount of bubbles generated from the bubble generating tubes 136a to 136h can be made approximately equal, thereby suppressing uneven processing throughout the entire surface of the substrate W.

[0170] In addition, the above reference Figures 1 to 11In the description provided, gas is supplied to the substrate W from below the processing liquid L stored in the processing tank 110, but this embodiment is not limited to this. For the substrate W, both gas and liquid may be supplied from below the processing liquid L stored in the processing tank 110.

[0171] Next, refer to Figures 1-12 The substrate processing apparatus 100 of this embodiment will be described. Figure 12 This is a schematic diagram of the substrate processing apparatus 100 of this embodiment. Figure 12 The substrate processing apparatus 100 shown is otherwise identical to the one described above, except that it also includes a liquid supply unit 150. Figure 2 The substrate processing apparatus 100 described herein is identical, and repeated descriptions are omitted to avoid redundancy.

[0172] like Figure 12 As shown, the substrate processing apparatus 100 also includes a liquid supply unit 150. The liquid supply unit 150 supplies liquid to the processing tank 110. Typically, the liquid supply unit 150 supplies processing liquid L to the processing tank 110. In this case, the liquid supply unit 150 preferably supplies liquid upward from a position below the processing liquid L in the processing tank 110. As an example, the liquid may be the same type of processing liquid L as the processing liquid L stored in the processing tank 110.

[0173] When the processing liquid L is supplied to the liquid supply unit 150, the upward-supplying processing liquid extrudes the portion of the processing liquid in contact with the substrate W, causing the surface of the substrate W to move upward. After the upward-supplying processing liquid passes through, fresh processing liquid L existing in the surrounding area enters. In this way, by contacting the surface of the substrate W with the upward-supplying processing liquid, the surface of the substrate W can be agitated, thereby replacing the processing liquid L on the surface of the substrate W with fresh processing liquid. As a result, the processing speed of the substrate W can be increased.

[0174] The liquid supply unit 150 includes a liquid supply source 152, a liquid supply pipe 154, and a liquid ejection pipe 156. Liquid is supplied from the liquid supply source 152. The liquid supply source 152 is located outside the processing tank 110. Furthermore, the liquid supply source 152 can circulate the liquid temporarily used as processing liquid L in the processing tank 110. The liquid ejection pipe 156 extends in the Y direction. Here, the liquid ejection pipe 156 extends parallel to the bubble generating pipe 136.

[0175] Liquid supply pipe 154 connects liquid supply source 152 to liquid discharge pipe 156. Liquid supplied from liquid supply source 152 flows through liquid supply pipe 154 to liquid discharge pipe 156. At least a portion of liquid supply pipe 154 is disposed outside processing tank 110.

[0176] A liquid ejection pipe 156 is disposed within the processing tank 110. Typically, the liquid ejection pipe 156 is disposed on the bottom surface of the processing tank 110. The liquid ejection pipe 156 may be disposed on the side above the bubble generating pipe 136 in the vertical direction. Alternatively, the liquid ejection pipe 156 may also be disposed on the side below the bubble generating pipe 136 in the vertical direction.

[0177] Next, refer to Figures 1 to 13 The substrate processing apparatus 100 of this embodiment will be described. Figure 13 (a) is a schematic top view of the substrate processing apparatus 100 of this embodiment. Figure 13 (b) is a schematic diagram of the substrate processing apparatus 100. Figure 13 (a) and Figure 13 (b) The substrate processing apparatus 100 shown here has the same configuration as described above, except that it also includes a liquid supply unit 150. Figure 3 (b) and Figure 4 The substrate processing apparatus 100 described herein is identical, and repeated descriptions are omitted to avoid redundancy.

[0178] like Figure 13 As shown in (a), the liquid ejection pipe 156 has a liquid ejection pipe 156a and a liquid ejection pipe 156b. The liquid ejection pipes 156a and 156b extend parallel to each other. The liquid ejection pipes 156a and 156b extend in the Y direction. The liquid ejection pipes 156a and 156b are arranged sequentially from the -X direction to the +X direction. The liquid ejection pipe 156a is positioned between the bubble generating pipe 136a and the bubble generating pipe 136b. The liquid ejection pipe 156b is positioned between the bubble generating pipe 136c and the bubble generating pipe 136d.

[0179] Liquid is supplied from liquid supply source 152 through liquid supply pipe 154a to liquid outlet pipe 156a. Liquid is supplied from liquid supply source 152 through liquid supply pipe 154b to liquid outlet pipe 156b.

[0180] Both liquid ejection pipes 156a and 156b have a plurality of openings 156p. The spacing between the plurality of openings 156p is approximately equal to the spacing between the substrates W. The plurality of openings 156p are located between the substrates W arranged in the alignment direction. Liquid ejection pipes 156a and 156b have the same configuration. Furthermore, in this specification, liquid ejection pipes 156a and 156b are sometimes collectively referred to as liquid ejection pipe 156.

[0181] In the liquid ejection pipe 156, a plurality of openings 156p are arranged in a row. The liquid ejection pipe 156 sprays the treatment liquid L from the plurality of openings 156p into the treatment tank 110. In this case, the plurality of openings 156p preferably face upward from a position below the treatment liquid L in the treatment tank 110. Here, the size and spacing of the plurality of openings 156p are equal to each other.

[0182] like Figure 13 As shown in (b), bubble generating pipes 136a to 136d and liquid ejection pipes 156a and 156b are arranged in the processing tank 110. The openings 136p of the bubble generating pipes 136a to 136d are arranged at the top of the bubble generating pipes 136a to 136d with their ejection direction along the vertical direction.

[0183] On the other hand, the openings 156p of the liquid ejection pipes 156a and 156b are positioned at an angle relative to the vertical direction (Z direction) with their ejection direction toward the center of the substrate W. Therefore, when the upwardly angled liquid ejected from the opening 156p of the liquid ejection pipe 156a merges with the upwardly angled liquid flow ejected from the opening 156p of the liquid ejection pipe 156b, a very strong upward flow can be formed inside the processing tank 110.

[0184] Next, refer to Figures 1 to 14 The substrate processing apparatus 100 of this embodiment will be described. Figure 14 (a) is a schematic diagram showing the bubbles generated when gas is supplied to multiple bubble generating tubes 136 at equal flow rates in a substrate processing apparatus. Figure 14 (b) is a schematic diagram showing the flow of the processing liquid in the substrate processing apparatus 100 of this embodiment. Furthermore, Figure 14 (a) and Figure 14 In (b), except for the liquid ejection pipe 156 being installed in the treatment tank 110, the other configurations are the same as described above. Figure 4 (a) and Figure 4 (b) The substrate processing apparatus 100 described herein is identical, and repeated descriptions are omitted to avoid redundancy. Here, the flow control mechanisms 140a to 140d also ensure that the flow rates of the gas supplied to each bubble generating tube 136a to 136d are equal.

[0185] like Figure 14As shown in (a), if gas is supplied to the bubble generating pipes 136a to 136d respectively, bubbles will be generated in the treatment liquid L. Bubbles are generated in the treatment liquid L by ejecting gas from the bubble generating pipes 136a to 136d into the treatment tank 110. The bubbles generated in the treatment liquid L float within the treatment liquid L and reach the interface between the treatment liquid L and the gas (e.g., air or a specific ambient gas) within the treatment tank 110. Furthermore, a very strong upward flow is formed inside the treatment tank 110 by merging the upwardly angled liquid ejected from the opening 156p of the liquid ejection pipe 156a with the upwardly angled liquid flow ejected from the opening 156p of the liquid ejection pipe 156b.

[0186] When the gas flow rates supplied to each of the bubble generating tubes 136a to 136d are equal, the amount of bubbles generated in the bubble generating tubes 136a to 136d is not equal. The amount of bubbles generated from bubble generating tube 136a is less than the amount of bubbles generated from bubble generating tube 136b. Similarly, the amount of bubbles generated from bubble generating tube 136d is less than the amount of bubbles generated from bubble generating tube 136c.

[0187] like Figure 14 As shown in (b), bubbles generated in bubble generating pipes 136a-136d float in the processing liquid L, creating a flow of processing liquid L within the processing tank 110. Here, because a very strong upward flow is formed, the bubbles rise rapidly. As the bubbles rise, the processing liquid L reaching the interface between the processing liquid L and the gas (e.g., air or a specific ambient gas) within the processing tank 110 flows outward in both the -X and +X directions above the processing liquid L. Then, the processing liquid L forms a downward flow that rapidly flows downward along the sidewalls of the processing tank 110 in both the X and +X directions.

[0188] Thus, the bubble generating pipes 136a and 136d located outside the processing tank 110 are more affected by the downward flow of the processing liquid L flowing from above to below in the processing tank 110 compared to the bubble generating pipes 136b and 136c located inside the processing tank 110. Therefore, even if the gas flow rates supplied to the bubble generating pipes 136a to 136d are equal, the amount of bubbles generated from the bubble generating pipes 136a to 136d is not equal. Specifically, the amount of bubbles generated from the bubble generating pipes 136a and 136d located outside the processing tank 110 is less than the amount of bubbles generated from the bubble generating pipes 136b and 136c located inside the processing tank 110.

[0189] Next, refer to Figure 15 The substrate processing apparatus 100 of this embodiment will be described. Figure 15(a) is a schematic top view of the substrate processing apparatus 100 of this embodiment. Figure 15 (b) is a schematic diagram of the substrate processing apparatus 100 of this embodiment, which generates bubbles by supplying gas to a plurality of bubble generating tubes 136 at different flow rates.

[0190] like Figure 15 As shown in (a), flow control mechanisms 140a to 140d control the flow rate of gas supplied to bubble generating pipes 136a to 136d in different ways. Flow control mechanisms 140a and 140b control the flow rate of gas flowing in gas supply pipes 134a and 134b in such a way that the flow rate of gas supplied to bubble generating pipe 136a is greater than the flow rate of gas supplied to bubble generating pipe 136b. Furthermore, flow control mechanisms 140c and 140d control the flow rate of gas flowing in gas supply pipes 134c and 134d in such a way that the flow rate of gas supplied to bubble generating pipe 136d is greater than the flow rate of gas supplied to bubble generating pipe 136c.

[0191] Therefore, the flow rate of gas supplied to the outer bubble generating pipes 136a and 136d in the processing tank 110 is greater than the flow rate of gas supplied to the inner bubble generating pipes 136b and 136c in the processing tank 110.

[0192] like Figure 15 As shown in (b), if gas is supplied to the bubble generating pipes 136a to 136d respectively, bubbles will be generated in the processed liquid L. Here, the amount of bubbles generated from bubble generating pipe 136a, the amount of bubbles generated from bubble generating pipe 136b, the amount of bubbles generated from bubble generating pipe 136c, and the amount of bubbles generated from bubble generating pipe 136d are each approximately equal. In detail, bubbles of approximately the same size are generated into the processed liquid L from bubble generating pipes 136a to 136d at the same frequency.

[0193] In the substrate processing apparatus 100 of this embodiment, the gas supplied to the outer bubble generating pipes 136a and 136d in the processing tank 110 is more abundant than the gas supplied to the inner bubble generating pipes 136b and 136c in the processing tank 110. Therefore, the amount of bubbles generated from the bubble generating pipes 136a to 136d can be made approximately equal. Especially when an upflow is formed, the substrate processing speed also increases along with the bubble flow. Even when substrate processing is performed at such a high speed, uneven processing across the entire surface of the substrate W can be suppressed.

[0194] Next, refer to Figures 1 to 16The substrate processing apparatus 100 of this embodiment will be described. Figure 16 This is a schematic diagram of the substrate processing apparatus 100 of this embodiment.

[0195] like Figure 16 As shown, the processing tank 110 has a dual-tank structure comprising an inner tank 112 and an outer tank 114. The inner tank 112 and the outer tank 114 each have an upward-opening upper opening. The inner tank 112 is configured to store a processing liquid L and accommodate multiple substrates W. The outer tank 114 is disposed on the outer peripheral surface of the upper opening of the inner tank 112.

[0196] The substrate processing apparatus 100 also includes a flow rate adjustment mechanism 160. The flow rate adjustment mechanism 160 is used in the circulation of the processing liquid L. The flow rate adjustment mechanism 160 circulates the processing liquid L stored in the processing tank 110 and supplies the processing liquid L to each liquid ejection pipe 156.

[0197] The flow regulation mechanism 160 includes piping 161, pump 162, heater 163, filter 164, regulating valve 165, and valve 166. Pump 162, heater 163, filter 164, regulating valve 165, and valve 166 are arranged sequentially from upstream to downstream of piping 161.

[0198] Pipe 161 redirects the treatment fluid L discharged from treatment tank 110 back to treatment tank 110. Multiple liquid ejector pipes 156 are connected to the downstream end of pipe 161. The liquid ejector pipes 156 supply the treatment fluid L supplied from pipe 161 to treatment tank 110.

[0199] Pump 162 delivers processing fluid L from piping 161 to multiple liquid ejector pipes 156. Therefore, heater 163 heats the processing fluid L flowing in piping 161. The temperature of the processing fluid L is adjusted by heater 163. Filter 164 filters the processing fluid L flowing in piping 161.

[0200] Adjusting valve 165 regulates the opening of piping 161 to adjust the flow rate of the treatment fluid L to be supplied to multiple liquid outlet pipes 156. Specifically, adjusting valve 165 includes a valve body (not shown) with an internal valve seat, a valve body that opens and closes the valve seat, and a brake (not shown) that moves the valve body between an open position and a closed position. Valve 166 opens and closes piping 161.

[0201] Multiple liquid ejector pipes 156 supply treatment fluid L to the inner tank 112 of the treatment tank 110. The multiple liquid ejector pipes 156 are arranged inside the inner tank 112 of the treatment tank 110 at the bottom of the inner tank 112. The multiple liquid ejector pipes 156 are each generally cylindrical in shape.

[0202] Multiple liquid ejection pipes 156 each have multiple openings 156p. Figure 16In the diagram, one opening 156p is shown for one liquid ejection pipe 156. Multiple liquid ejection pipes 156 respectively supply the processing liquid L from multiple openings 156p to the inner tank 112.

[0203] The substrate processing apparatus 100 also includes a processing solution supply unit 150A and a diluent supply unit 150B. The processing solution supply unit 150A supplies processing solution L to the processing tank 110. The processing solution L can be, for example, a solution composed of approximately 85% by mass phosphoric acid (H3PO4) and approximately 15% by mass water (deionized water).

[0204] The processing fluid supply unit 150A includes a nozzle 152A, a piping 154A, and a valve 156A. The nozzle 152A sprays processing fluid L into the inner tank 112. The nozzle 152A is connected to the piping 154A. Processing fluid L from the processing fluid supply source TKA is supplied to the piping 154A. The valve 156A is installed on the piping 154A. When the valve 156A is open, the processing fluid L sprayed from the nozzle 152A is supplied into the inner tank 112.

[0205] The diluent supply unit 150B supplies diluent to the processing tank 110. The diluent supply unit 150B includes a nozzle 152B, a pipe 154B, and a valve 156B. The nozzle 152B sprays diluent into the outer tank 114. The nozzle 152B is connected to the pipe 154B. The diluent supplied to the pipe 154B can be any of the following: DIW (deionized water), carbonated water, electrolyzed ionized water, hydrogen-rich water, ozone water, and an aqueous solution of hydrochloric acid with a dilution concentration (e.g., approximately 10 ppm to 100 ppm). The pipe 154B is supplied with diluent from the diluent supply source TKB. The pipe 154B is equipped with a valve 156B. When the valve 156B is open, the diluent sprayed from the nozzle 152B is supplied into the outer tank 114.

[0206] The substrate processing apparatus 100 also includes a drain section 170. The drain section 170 drains the processing liquid L from the processing tank 110.

[0207] The drainage section 170 includes a drainage pipe 170a and a valve 170b. The bottom wall of the inner tank 112 of the treatment tank 110 is connected to the drainage pipe 170a. The valve 170b is installed on the drainage pipe 170a. By opening the valve 170b, the treatment liquid L stored in the inner tank 112 is discharged to the outside through the drainage pipe 170a. The discharged treatment liquid L is transported to a drainage treatment device (not shown) for treatment.

[0208] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the described embodiments and can be implemented in various forms without departing from its spirit. Furthermore, various inventions can be formed by appropriately combining the multiple constituent elements disclosed in the embodiments. For example, several constituent elements can be deleted from all the constituent elements shown in the embodiments. Moreover, constituent elements from different embodiments can be appropriately combined. The accompanying drawings are schematically shown with each constituent element as the main body for ease of understanding; there are also cases where the thickness, length, number, spacing, etc., of each constituent element shown in the drawings differ from the actual object for ease of drawing. Furthermore, the material, shape, size, etc., of each constituent element shown in the embodiments are examples and are not particularly limited; various modifications can be made without substantially departing from the effects of the present invention.

[0209] For example, the above reference Figures 1 to 16 In the description, the bubble generating tube 136 extends parallel to the normal direction (Y direction) of the main surface of the substrate W, but this embodiment is not limited to this. Preferably, different bubble generating tubes 136 are arranged below the central region and the outer peripheral region of one substrate W.

[0210] [Industry availability]

[0211] This invention is suitable for substrate processing apparatus and substrate processing methods.

[0212] [Symbol Explanation]

[0213] 100: Substrate processing apparatus

[0214] 110: Processing tank

[0215] 120: Substrate holding section

[0216] 130: Gas Supply Department

[0217] 150: Liquid Supply Department

[0218] 180: Control device

[0219] 200: Gas Supply Department

[0220] W: Substrate

[0221] L: Treatment fluid.

Claims

1. A substrate processing apparatus comprising: A substrate holding section holds at least one substrate; A processing tank for storing a processing solution for impregnating the substrate held in the substrate holding portion; An outer bubble generating tube is located below the outer peripheral region of the substrate, and bubbles are generated in the processing liquid by supplying gas to the processing liquid; An inner bubble generating tube is located below the central region of the substrate, and bubbles are generated in the processing liquid by supplying gas to the processing liquid. The first gas supply pipe connects the gas supply source to the outer bubble generating pipe via a flow path. The second gas supply pipe connects the gas supply source to the inner bubble generating pipe via a flow path. A first flow control mechanism is installed in the first gas supply pipe; A second flow control mechanism is installed in the second gas supply pipe; and The control unit controls the first flow control mechanism and the second flow control mechanism in such a way that the flow rate of gas supplied to the outer bubble generating tube is greater than the flow rate of gas supplied to the inner bubble generating tube, and the amount of bubbles generated in the treatment liquid by the outer bubble generating tube is equal to the amount of bubbles generated in the treatment liquid by the inner bubble generating tube.

2. The substrate processing apparatus according to claim 1, wherein the outer bubble generating tube and the inner bubble generating tube extend parallel to the normal direction of the main surface of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, further comprising a pressure gauge that measures the pressure of a gas flowing in a first gas supply pipe connected to the outer bubble generating pipe and the pressure of a gas flowing in a second gas supply pipe connected to the inner bubble generating pipe.

4. The substrate processing apparatus according to claim 3, wherein The control unit is The flow rate of the gas flowing in the first gas supply pipe and the second gas supply pipe is controlled based on the pressure of the gas flowing in the first gas supply pipe connected to the outer bubble generating pipe and the pressure of the gas flowing in the second gas supply pipe connected to the inner bubble generating pipe.

5. The substrate processing apparatus according to claim 1 or 2, further comprising: The storage section of the storage control program, and The control unit controls the first flow control mechanism and the second flow control mechanism according to the control program.

6. The substrate processing apparatus according to claim 1 or 2, wherein the substrate holding portion holds a plurality of substrates arranged in a column along a column direction. The inner bubble generating tube includes: The inner first conduit is disposed below the central region of each of the substrates located on one side of the substrate row; and The second inner conduit, separate from the first inner conduit, is arranged in a straight line with the first inner conduit below the central region of each substrate located on the other side of the substrate row; and The outer bubble generating tube includes: The outermost first conduit is disposed below the outer peripheral region of each of the plurality of substrates located on one side of the substrate row; and The second outer conduit, separate from the first outer conduit, is arranged in a straight line below the outer peripheral region of each substrate located on the other side of the substrate column.

7. The substrate processing apparatus according to claim 1 or 2, further comprising a liquid ejection pipe disposed in the processing tank.

8. The substrate processing apparatus of claim 7, wherein the liquid ejection pipe is configured to extend parallel to the normal direction relative to the main surface of the substrate.

9. The substrate processing apparatus according to claim 1 or 2, wherein the processing solution comprises phosphoric acid solution.

10. A substrate processing method, comprising: The immersion process involves immersing a substrate in a processing solution stored in a processing tank. and The bubble supply process involves supplying gas to an outer bubble generating pipe located below the outer peripheral region of the substrate and an inner bubble generating pipe located below the central region of the substrate, both situated within the processing tank. This generates bubbles in the processing liquid, which are then supplied to the substrate immersed in the processing liquid. The bubble supply process includes an uneven flow supply process, in which the gas flow rate is adjusted such that the gas flow rate supplied to the outer bubble generating pipe is greater than the gas flow rate supplied to the inner bubble generating pipe, and the amount of bubbles generated in the treatment liquid by the outer bubble generating pipe is equal to the amount of bubbles generated in the treatment liquid by the inner bubble generating pipe.

11. The substrate processing method according to claim 10, wherein the outer bubble generating tube and the inner bubble generating tube extend parallel to the normal direction of the main surface of the substrate.

12. The substrate processing method according to claim 10 or 11, wherein the bubble supply process further comprises: The equal flow supply project supplies gas to the outer bubble generating pipe and the inner bubble generating pipe at equal flow rates. and In the pressure measurement process, during the equal flow supply process, the pressure of the gas flowing in the first gas supply pipe connected to the outer bubble generating pipe and the pressure of the gas flowing in the second gas supply pipe connected to the inner bubble generating pipe are measured; and The uneven flow supply system is based on the measurement results in the pressure measurement system, and sets the flow rate of the gas flowing in the first gas supply pipe connected to the outer bubble generating pipe and the flow rate of the gas supplied to the second gas supply pipe connected to the inner bubble generating pipe.

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