Display panel and display device

By setting bonding zones of different heights in the bonding metal layer of the driving backplane, the problem of uneven bonding in micro LED display panels is solved, the bonding yield is improved and the fabrication difficulty of the upper electrode layer is reduced.

CN114447022BActive Publication Date: 2026-03-10BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-12-30
Publication Date
2026-03-10

AI Technical Summary

Technical Problem

In micro-LED or sub-millimeter LED display panels, uneven bonding and different stack thicknesses lead to poor bonding, increasing the difficulty of fabricating the upper electrode layer.

Method used

Bonding regions of different heights are set in the bonding metal layer of the driving backplane to accommodate light-emitting units with different stack thicknesses. For example, light-emitting units with larger stack thicknesses are set in the bonding region closer to the substrate, while light-emitting units with smaller stack thicknesses are set in the bonding region farther from the substrate, so as to reduce or eliminate the height difference.

Benefits of technology

This improved the bonding yield between the light-emitting unit and the driving backplate, reduced the manufacturing difficulty of the upper electrode layer, and ensured that the top of the light-emitting unit was basically flush.

✦ Generated by Eureka AI based on patent content.

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Abstract

This application provides a display panel and a display device. The display panel includes a driving backplane, which includes a substrate, a driving circuit layer on one side of the substrate, an organic insulating layer on the side of the driving circuit layer away from the substrate, and a bonding metal layer on the side of the organic insulating layer away from the substrate. The bonding metal layer includes bonding regions for bonding with light-emitting units, and at least two bonding regions are at different distances from the substrate. This design can reduce, or even eliminate, the height difference between light-emitting units of different stack thicknesses after bonding to the bonding pads of the driving backplane. On the one hand, it can ensure the bonding yield between the light-emitting units and the driving backplane, and on the other hand, it can make the top of the light-emitting units basically flush, reducing the manufacturing difficulty of the upper electrode layer.
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Description

Technical Field

[0001] This application relates to the field of display panel technology, and more particularly to a display panel and display device. Background Technology

[0002] In a micro LED or mini LED display panel, there are typically a driving backplane, a pixel layer and an upper electrode layer stacked together. The pixel layer includes multiple Mini LEDs / Micro LEDs, which are mass-transferred and bonded to the bonding pads of the driving backplane. The upper electrode layer is located on the side of the pixel layer away from the driving backplane.

[0003] Since the stack thickness of Mini LEDs / Micro LEDs that can emit different colors may vary, uneven bonding can easily occur during the mass transfer and bonding process of Mini LEDs / Micro LEDs onto the bonding pads of the driver backplane, resulting in more bonding defects. In addition, Mini LEDs / Micro LEDs with different stack thicknesses have different heights after bonding on the bonding pads of the driver backplane, which increases the difficulty of fabricating the top electrode layer. Summary of the Invention

[0004] In view of the above, the purpose of this application is to provide a display panel and a display device.

[0005] In a first aspect, embodiments of this application provide a display panel, the display panel including a plurality of pixel units, each of the pixel units including a light-emitting unit displaying a different color;

[0006] The display panel further includes a driving backplane, which includes a substrate, a driving circuit layer on one side of the substrate, an organic insulating layer on the side of the driving circuit layer away from the substrate, and a bonding metal layer on the side of the organic insulating layer away from the substrate.

[0007] The bonding metal layer includes bonding regions bonded to the light-emitting unit, and at least two of the bonding regions are at different distances from the substrate.

[0008] In the display panel provided in the embodiments of this application, the bonding metal layer is provided with bonding areas of different heights to accommodate light-emitting units with different stack thicknesses. For example, light-emitting units with larger stack thicknesses are disposed in bonding areas closer to the substrate, while light-emitting units with smaller stack thicknesses are disposed in bonding areas farther from the substrate. This can reduce the height difference between light-emitting units with different stack thicknesses after bonding to the bonding pads of the driving backplate, or even eliminate the height difference. On the one hand, this can ensure the bonding yield between the light-emitting units and the driving backplate, and on the other hand, it can make the top of the light-emitting units basically flush, reducing the manufacturing difficulty of the upper electrode layer.

[0009] In one possible implementation, the bonding metal layer includes a first bonding region and a second bonding region, wherein the distance between the first bonding region and the substrate is less than the distance between the second bonding region and the substrate.

[0010] In one possible implementation, the light-emitting unit is electrically connected to the first bonding region or the second bonding region.

[0011] In one possible implementation, the bonding metal layer includes bonding pads corresponding to the light-emitting units, with each bonding pad corresponding to one of the light-emitting units; the bonding pad includes a first bonding region and a second bonding region, which are different portions of the bonding pad.

[0012] In one possible implementation, the organic insulating layer includes a first surface away from the substrate and a bonding groove formed on the first surface, the bonding groove including a groove bottom and groove walls;

[0013] The bonding pad extends in the bottom of the groove, the groove wall, and the first surface. The portion of the bonding pad located at the bottom of the groove is the first bonding area, and the portion of the bonding pad located on the first surface is the second bonding area.

[0014] In one possible implementation, the bonding groove extends through the organic insulating layer.

[0015] In one possible implementation, the driving circuit layer is disposed on the side of the organic insulating layer close to the substrate. The driving circuit layer includes a thin-film transistor, a scan line, and a signal line. The thin-film transistor includes a gate, a first electrode, and a second electrode. The scan line is connected to the gate of the thin-film transistor, the signal line is connected to the first electrode of the thin-film transistor, and the bonding pad is connected to the second electrode of the thin-film transistor.

[0016] In one possible implementation, the second electrode of the thin-film transistor extends to the bottom of the bonding groove and contacts the bonding pad.

[0017] In one possible implementation, the bonding metal layer includes bonding pads corresponding to the light-emitting units, with each bonding pad corresponding to one of the light-emitting units; the bonding pad includes either the first bonding region or the second bonding region.

[0018] In one possible implementation, the light-emitting unit is a micro light-emitting diode or a sub-millimeter light-emitting diode, and the pixel unit includes a first light-emitting unit and a second light-emitting unit. The stack thickness of the first light-emitting unit is greater than the stack thickness of the second light-emitting unit. The first light-emitting unit is bonded to the first bonding region, and the second light-emitting unit is bonded to the second bonding region.

[0019] In one possible implementation, the light-emitting unit is a miniature light-emitting diode, the first light-emitting unit includes a red miniature light-emitting diode that emits red light, the second light-emitting unit includes a green miniature light-emitting diode that emits green light and a blue miniature light-emitting diode that emits blue light; the stack thickness of the red miniature light-emitting diode is greater than the stack thickness of the green miniature light-emitting diode or the blue miniature light-emitting diode; the stack thickness of the green miniature light-emitting diode and the blue miniature light-emitting diode are the same.

[0020] In one possible implementation, the display panel includes a fill layer and an upper electrode layer. The fill layer fills the spaces between the light-emitting units and exposes the top of the light-emitting units away from the driving backplate. The upper electrode layer is disposed on the side of the fill layer away from the driving backplate and is connected to the exposed light-emitting units. The upper electrode layer is made of a transparent material.

[0021] In one possible implementation, the filler layer comprises at least one of a photoresist material, a light-shielding material, and a polyimide.

[0022] Secondly, embodiments of this application provide a display device, including the display panel described in any one of the embodiments of the first aspect. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only one or more embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0025] Figure 2 A pixel layout diagram provided for an embodiment of this application;

[0026] Figure 3 This is a schematic diagram of the structure of a miniature light-emitting diode display panel provided in an embodiment of this application;

[0027] Figure 4 for Figure 3 Schematic diagram of the structure of the drive backplate;

[0028] Figure 5 This is a schematic diagram of the arrangement of bonding pads and light-emitting units provided in an embodiment of this application.

[0029] Explanation of reference numerals in the attached figures:

[0030] 1-Driver backplane, 2-Pixel layer, 3-Upper electrode layer, 4-Pixel unit, 41-Light-emitting unit, 5-Bonding groove, 6-First surface, 7-Thin film transistor, 8-Substrate, 9-Barrier layer, 10-Gate insulating layer, 11-Interlayer insulating layer, 12-Organic insulating layer, 13-Bonding metal layer, 14-Filling layer, 15-Blue micro-light-emitting diode, 16-Green micro-light-emitting diode, 17-Red micro-light-emitting diode, 18-Gate layer, 19-Source / drain metal layer, 20-Active layer, 21-Metal shielding layer, 22-First bonding region, 23-Second bonding region, 24-Bonding pad. Detailed Implementation

[0031] A display panel is provided in the related technology, which includes a driving backplane, a pixel layer and an upper electrode layer. The upper electrode layer and the driving backplane are disposed on both sides of the pixel layer. The pixel layer includes pixel units arranged in an array. Each pixel unit includes a red micro light-emitting diode for emitting red light, a green micro light-emitting diode for emitting green light, and a blue micro light-emitting diode for emitting blue light.

[0032] Among them, the red micro-LED is a gallium arsenide (GaAs) structure, while the blue and green micro-LEDs are gallium nitride (GaN) structures. Due to the different substrate and epitaxial layer materials, the actual film growth of the two structures, GaAs and GaN, is quite different, resulting in a large difference in the stack thickness of the two structures, which is generally 1 to 3 μm. The stack thickness of the red micro-LED is greater than that of the blue or green micro-LED.

[0033] In the manufacturing process of the aforementioned display panel, red, green, and blue micro LEDs are mass-transferred and bonded to the corresponding bonding pads on the driver backplane.

[0034] Because the stack thickness of different micro LEDs can vary significantly, the bonding pads on the drive backplane have the same height, and bonding requires a certain temperature and pressure, excessive pressure during the bonding process can cause damage to the thicker red micro LEDs due to excessive stress, while insufficient pressure can result in weak bonding or bonding failure between the thinner green and blue micro LEDs, leading to a decrease in product yield. Furthermore, even if bonding is successful, the significant thickness difference between the micro LEDs can cause unevenness at the top, increasing the difficulty of fabricating the upper electrode layer.

[0035] In view of this, embodiments of this application provide a driving backplane, a display panel, and a display device. In the bonding metal layer of the driving backplane, bonding areas of different heights are provided to accommodate micro-light-emitting diodes with different stack thicknesses. For example, micro-light-emitting diodes with larger stack thicknesses are placed in lower bonding areas, and micro-light-emitting diodes with smaller stack thicknesses are placed in higher bonding areas. This can reduce the height difference between micro-light-emitting diodes with different stack thicknesses after bonding to the bonding pads of the driving backplane, or even eliminate the height difference, making their tops basically flush. This ensures bonding yield and also facilitates the fabrication or reduction of difficulty in the upper electrode layer.

[0036] In addition, the above design can also be applied to sub-millimeter light-emitting diode (Mini LED) display panels to solve the same problems and achieve the same technical effects. Its working principle is the same as that of miniature light-emitting diode display panels, so it will not be described in detail here.

[0037] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application, such as... Figure 1 As shown, the display panel includes a driving backplate 1, a pixel layer 2 and an upper electrode layer 3. The upper electrode layer 3 and the driving backplate 1 are disposed on both sides of the pixel layer 2. The pixel layer 2 includes multiple pixel units 4 arranged in an array.

[0039] Figure 2 A pixel layout diagram of a display panel provided in an embodiment of this application, such as... Figure 2As shown, in this display panel, the pixel array includes pixel rows extending along the row direction and pixel columns extending along the column direction. Each pixel unit 4 includes a light-emitting unit 41 capable of emitting a single color. Multiple light-emitting units 41 can be provided, and different combinations of these units can emit different colors to achieve color display. In this embodiment, each pixel unit 4 includes a red (R) light-emitting unit capable of emitting red light, a green (G) light-emitting unit capable of emitting green light, and a blue (B) light-emitting unit capable of emitting blue light. During the display process of this display panel, color display is achieved through the combination of red, green, and blue light.

[0040] The light-emitting unit 41 can be a micro LED or a sub-millimeter LED. Mini LED refers to an LED chip with a die size of approximately 100μm to 300μm, while Micro LED refers to an LED chip with a die size of less than 100μm. Mini LEDs / Micro LEDs can be used as self-emissive LED displays, and have advantages such as low power consumption, high brightness, high resolution, high color saturation, fast response speed, long lifespan, and high efficiency, and have broad application prospects.

[0041] In this embodiment, the light-emitting unit 41 is described using a micro LED as an example. Correspondingly, the red light-emitting unit uses a red micro LED, the green light-emitting unit uses a green micro LED, and the blue light-emitting unit uses a blue micro LED. The red micro LED has a gallium arsenide (GaAs) structure, while the blue and green micro LEDs have a gallium nitride (GaN) structure. Due to the different substrate and epitaxial layer materials, the actual film growth of the GaAs and GaN structures differs significantly, resulting in a large difference in the stack thickness of the two structures, typically 1 to 3 μm. The stack thickness of the red micro LED is greater than that of the blue or green micro LEDs. In this document, the red light-emitting unit is defined as the first light-emitting unit, and the blue and green light-emitting units are defined as the second light-emitting units. As described above, the stack thickness of the first light-emitting unit is greater than that of the second light-emitting unit.

[0042] Figure 3 This is a schematic diagram of the structure of a miniature light-emitting diode display panel provided in an embodiment of this application, as shown below. Figure 3 As shown in the embodiment of this application, the micro LED display panel includes a driving backplate 1, a pixel layer 2, and an upper electrode layer 3.

[0043] Figure 4 for Figure 3 Please refer to the structural diagram of the drive backplane. Figure 3 and Figure 4 The driving backplane 1 includes a substrate 8, and a barrier layer 9, a driving circuit layer, an organic insulating layer 12, and a bonding metal layer 13 are stacked on one side of the substrate 8. The substrate 8 can be a plate-like structure with a certain rigidity, and can be made of materials such as glass, quartz, or plastic; or it can be a flexible plate-like structure that can be bent, and can be made of polymer materials such as polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyaryl compounds (PAR), or glass fiber reinforced plastic (FRP). In this embodiment, a glass substrate is used as an example for illustration.

[0044] The substrate 8 has a plate-like structure, including opposing first and second sides, so as to... Figure 3 Taking the orientation shown as an example, the first side is located above the second side, that is, the first side is the upper surface of the substrate 8, and the second side is the lower surface of the substrate 8. In this document, the direction perpendicular to the first surface 6 and away from the substrate 8 is defined as the first direction, which is also the direction between the second side and the first side.

[0045] The drive backplate 1 has a barrier layer 9 on the first side of the substrate 8. The barrier layer 9 may include inorganic materials, such as oxides or nitrides, and may include multiple layers or a single layer containing inorganic materials. By utilizing the material properties of inorganic materials, the substrate 8 and the structure on the substrate 8 are isolated, the penetration of foreign substances, moisture or outside air from below the substrate 8 is reduced or blocked, and a flat surface can be provided.

[0046] A driving circuit layer is disposed on the side of the barrier layer 9 away from the substrate 8, and a pixel driving circuit for driving the light-emitting unit 41 is disposed in the driving circuit layer. The pixel driving circuit includes multiple scan lines (Gates) extending along the row direction in the pixel array, and multiple signal lines (Data) extending along the column direction in the pixel array; the multiple scan lines are arranged side by side along the column direction, and the multiple signal lines are arranged side by side along the column direction. The pixel driving circuit also includes a thin-film transistor 7 corresponding to the light-emitting unit 41. The thin-film transistor 7 includes a control electrode, a first electrode, and a second electrode. The control electrode of the thin-film transistor 7 is connected to the scan line, the first electrode of the thin-film transistor 7 is connected to the signal line, and the second electrode of the thin-film transistor 7 is connected to the light-emitting unit 41.

[0047] It should be noted that the thin-film transistor 7 includes a gate, a source, and a drain. Because the source and drain can be interchanged in some cases, this paper refers to one of the source and drain in the thin-film transistor 7 as the first electrode, and the other of the source and drain as the second electrode.

[0048] Please continue to refer to this. Figure 3 and Figure 4 In the film layer structure, the driving circuit layer includes an active layer 20, a gate insulating layer 10, a gate layer 18, an interlayer insulating layer 11, and a source / drain metal layer 19. The active layer 20 can be made of amorphous silicon, low-temperature polysilicon (LTPS), or indium gallium zinc oxide (IGZO). The active layer 20 is disposed on the side of the barrier layer 9 away from the substrate 8. The gate insulating layer 10 is disposed on the side of the barrier layer 9 away from the substrate 8 and covers the active layer 20. The gate layer 18 is disposed on the side of the gate insulating layer 10 away from the substrate 8 and directly above the active layer 20, serving as the gate of the thin-film transistor 7. The interlayer insulating layer 11 is disposed on one side of the gate insulating layer 10 and covers the gate layer 18. The source / drain metal layer 19 is connected to the active layer 20 through vias on the gate insulating layer 10 and the interlayer insulating layer 11, serving as the first and second electrodes of the thin-film transistor 7.

[0049] In a possible implementation, the drive backplate 1 further includes a metal light-shielding layer 21, which is disposed between the substrate 8 and the barrier layer 9 to provide light protection for the active layer 20. In the orthogonal projection onto the substrate 8, the projection of the active layer 20 should fall into the projection of the metal light-shielding layer 21.

[0050] The organic insulating layer 12 is disposed on the side of the driving circuit layer away from the substrate 8, including a first surface 6 away from the substrate 8 and a bonding groove 5 formed on the first surface 6. The bonding groove 5 can be a through groove that penetrates the organic insulating layer 12 or a groove that does not penetrate the organic insulating layer 12. In this embodiment, the bonding groove 5 penetrating the organic insulating layer 12 is described as an example.

[0051] The bonding groove 5 includes a groove bottom and groove walls. In the orthographic projection onto the substrate 8, the second electrode of the thin-film transistor 7 falls into the projection of the groove bottom. The organic insulating layer 12 is formed by using an organic material through a patterning process after the driving circuit layer is fabricated on the substrate 8. In one possible embodiment, the organic material can be a resin.

[0052] It should be noted that the "patterning process" mentioned in this article includes processes such as film deposition, photoresist coating, mask exposure, development, etching, and photoresist stripping, which are known and mature fabrication processes. Deposition can be performed using known processes such as sputtering, evaporation, and chemical vapor deposition; coating can be performed using known coating processes; and etching can be performed using known methods. No restrictions are imposed here.

[0053] The bonding metal layer 13 is disposed on the side of the organic insulating layer 12 away from the driving circuit layer, and includes a bonding pad 24 corresponding to the light-emitting unit 41. The bonding pad 24 extends a certain distance from the bottom of the bonding groove 5, then extends along the groove wall to the first surface 6, and extends a certain distance on the first surface 6. The portion of the bonding pad 24 at the bottom of the groove is the first bonding area 22, and the portion of the bonding pad 24 on the first surface 6 is the second bonding area 23. The first bonding area 22 and the second bonding area 23 are connected through the portion of the bonding pad 24 located on the groove wall.

[0054] The second electrode in the thin-film transistor 7 extends to the bottom of the trench and is exposed. The exposed second electrode in the first bonding region 22 is connected to the bonding pad 24, thereby realizing the connection between the thin-film transistor 7 and the bonding pad 24.

[0055] It should be noted here that the vertical distance relative to the first side of the substrate 8 is defined as the height in this article.

[0056] As described above, the first bonding region 22 located at the bottom of the trench is lower than the second bonding region 23 located on the first surface 6 to accommodate micro-LEDs with different stack thicknesses. In other words, within the pixel region corresponding to the light-emitting unit 41, two bonding regions with different heights are provided. Micro-LEDs of different heights can be bonded to bonding regions of different heights to balance the height difference after the micro-LEDs of different heights are bonded to the driving backplate 1. For example, the first light-emitting unit with a larger stack thickness is bonded to the lower first bonding region 22, and the second light-emitting unit with a smaller stack thickness is bonded to the higher second bonding region 23.

[0057] Figure 5 Please refer to the schematic diagram of the arrangement of bonding pads and light-emitting units provided in the embodiments of this application. Figure 3 and Figure 5 The red micro-LED 17 with a larger stack thickness is bonded to the first bonding region 22 with a lower height, while the green micro-LED 16 or blue micro-LED 15 with a smaller stack thickness is bonded to the second bonding region 23 with a higher height. This can reduce or even eliminate the height difference between the micro-LEDs with different stack thicknesses after they are bonded to the bonding pad 24 of the driving backplate 1, making their tops basically flush. This ensures the bonding yield and also facilitates the fabrication of the upper electrode layer 3.

[0058] Furthermore, the size of the bonding groove 5 matches the corresponding micro-LED; that is, for a larger micro-LED, the bonding groove 5 can be enlarged accordingly. Since the mounting space for the micro-LEDs can be freely adjusted, a larger red micro-LED can be paired with blue and green micro-LEDs to improve the insufficient brightness of the red micro-LED of the same size, achieving better white balance. As described above, in the driving backplane provided in this embodiment, the position, shape, and size of the bonding pads within the holes can be arbitrarily defined using an organic insulating layer to achieve better white balance through the combination of the three colors.

[0059] The bonding metal layer 13 can be formed using a metal material through a patterning process, and the metal material can be at least one of tin (Sn) and indium (In).

[0060] In the above embodiments, the pixel region corresponding to the light-emitting unit includes two bonding regions that are an integral structure. However, the embodiments of this application are not limited to this. For example, in one possible implementation, the bonding region can be a separate structure; only one bonding region of a certain height is provided in the pixel region corresponding to the light-emitting unit, but the bonding regions in different light-emitting units of the same pixel unit can be different; as another example, in one possible implementation, the driving backplate can include multiple bonding regions of different heights corresponding to multiple light-emitting units of different heights. That is, the bonding metal layer includes bonding regions bonded to the light-emitting unit, and at least two bonding regions are at different distances from the substrate.

[0061] The display panel also includes a filling layer 14 to fill the gaps between the micro light-emitting diodes. The filling layer 14 is generally filled with an organic material. In possible embodiments, the filling layer 14 includes at least one of a photoresist material, a light-shielding material, and polyimide.

[0062] The filling layer 14 is processed to expose the top of the micro light-emitting diode, and then the upper electrode layer 3 is formed. The upper electrode layer 3 is a transparent electrode and can be made of transparent conductive oxide materials such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0063] This embodiment also provides a display device, which includes the display panel in the above embodiment. The display device can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, or navigator.

[0064] In the description of the embodiments of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0065] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0066] Furthermore, the technical features involved in the different embodiments of this application described above can be combined with each other as long as they do not conflict with each other.

[0067] The technical solutions of this application have been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of this application is obviously not limited to these specific embodiments. Without departing from the principles of this application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of this application.

Claims

1. A display panel, characterized by, The display panel comprises a plurality of pixel units, each of which comprises a light-emitting unit displaying different colors; The display panel further comprises a driving backplate, which comprises a substrate, a driving circuit layer on one side of the substrate, an organic insulating layer on the side of the driving circuit layer away from the substrate, and a bonding metal layer on the side of the organic insulating layer away from the substrate; The bonding metal layer comprises bonding areas bonded with the light-emitting units, and at least two of the bonding areas are different in distance from the substrate; The organic insulating layer comprises a first surface away from the substrate and a bonding groove opened on the first surface, the bonding groove comprises a groove bottom and a groove wall, and the part of the bonding metal layer located on the groove bottom is a first bonding area of the bonding metal layer; the bonding metal layer comprises bonding pads arranged corresponding to the light-emitting units, and the bonding pads correspond one-to-one to the light-emitting units; the part of the bonding pads located on the first surface is a second bonding area of the bonding metal layer, the distance from the first bonding area to the substrate is smaller than the distance from the second bonding area to the substrate; the bonding pads comprise the first bonding area and the second bonding area, which are different parts of the bonding pads; The pixel units comprise first light-emitting units and second light-emitting units, the first light-emitting units have a larger laminated thickness than the second light-emitting units; the first light-emitting units are bonded to the first bonding areas, and the second light-emitting units are bonded to the second bonding areas.

2. The display panel of claim 1, wherein, The light-emitting units are electrically connected to the first bonding areas or the second bonding areas.

3. The display panel of claim 1, wherein The bonding pads extend on the groove bottom, the groove wall and the first surface, the part of the bonding pads located on the groove bottom is the first bonding area, and the part of the bonding pads located on the first surface is the second bonding area.

4. The display panel of claim 3, wherein, The bonding groove penetrates through the organic insulating layer.

5. The display panel of claim 3, wherein, The driving circuit layer is arranged on the side of the organic insulating layer close to the substrate, and comprises a thin film transistor, a scanning line and a signal line; the thin film transistor comprises a gate, a first electrode and a second electrode; the scanning line is connected to the gate of the thin film transistor; the signal line is connected to the first electrode of the thin film transistor; and the bonding pads are connected to the second electrode of the thin film transistor.

6. The display panel of claim 5, wherein, The second electrode of the thin film transistor extends to the groove bottom of the bonding groove and is connected to the bonding pads.

7. The display panel of claim 1, wherein, The light-emitting units are micro light-emitting diodes or submillimeter light-emitting diodes.

8. The display panel of claim 7, wherein, The light-emitting units are micro light-emitting diodes, the first light-emitting units comprise red micro light-emitting diodes emitting red light, and the second light-emitting units comprise green micro light-emitting diodes emitting green light and blue micro light-emitting diodes emitting blue light; the laminated thickness of the red micro light-emitting diodes is larger than that of the green micro light-emitting diodes or the blue micro light-emitting diodes; and the laminated thickness of the green micro light-emitting diodes and the blue micro light-emitting diodes is the same.

9. The display panel of claim 1, wherein, The display panel comprises a filling layer and an upper electrode layer, the filling layer is filled between the light emitting units and exposes the top end of the light emitting units away from the driving back plate; the upper electrode layer is arranged on the side of the filling layer away from the driving back plate and is connected with the exposed light emitting units; and the upper electrode layer is made of transparent material.

10. The display panel of claim 9, wherein, The filling layer comprises at least one of photoresist material, light shielding material and polyimide.

11. A display device comprising the display panel according to any one of claims 1 to 10.

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