An imprint master and a method for preparing the same

Abstract

The present invention provides an imprint master and a preparation method thereof, relating to the technical field of micro-nano processing, including: a substrate, on which a patterned structure is provided, and an imprint hydrophobic film layer is provided on the bottom wall and side wall in the etching groove of the patterned structure; the material of the imprint hydrophobic film layer is a fluorine-containing polymer; the patterned structure is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%. Thereby, a dense fluorine-containing polymer can be correspondingly formed in each etching groove of the patterned structure, effectively avoiding the phenomenon of poor film-forming quality caused by the shadow effect. At the same time, the source of the fluorine-containing gas is relatively wide, effectively reducing the cost of manufacturing the imprint master and facilitating the smooth demolding of the subsequent imprinted product.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano processing technology, and more particularly, to an imprint master and a method for preparing the same. Background Art

[0002] Micro-nano manufacturing technology generally includes two aspects: microfabrication and nanofabrication. Among them, nanofabrication refers to the manufacturing technology of nano-scale structures, devices, and systems with specific functions. Nanoimprint technology belongs to one of them. Nanoimprint technology is a technology that transfers micro-nano structures on a template to a material to be processed with the assistance of a photoresist. It generally includes two parts: an imprint master and an imprinted product. In order to enable the imprinted product to be smoothly demolded from the imprint master, an imprint hydrophobic film is usually provided on the imprint master to reduce the surface energy of the imprint master.

[0003] The existing method of setting an imprint hydrophobic film on the surface of the imprint master generally uses the method of crucible thermal evaporation to form it. However, due to the evaporation angle limitation, the side walls and bottoms of the micro-nano structures have poor coverage or even difficult to cover due to the shadow effect of the incident angle, resulting in relatively poor film formation quality, which is not conducive to the smooth demolding of the imprinted product from the imprint master. Summary of the Invention

[0004] The purpose of the present invention is to provide an imprint master and a method for preparing the same to solve the problem of poor film formation quality caused by existing crucible evaporation.

[0005] To achieve the above object, the technical solution adopted in the embodiment of the present invention is as follows:

[0006] On the one hand, an embodiment of the present invention provides an imprint master, including: a substrate, a patterned structure is provided on the substrate, and an imprint hydrophobic film layer is provided on the bottom wall and side walls in the etching grooves of the patterned structure; the material of the imprint hydrophobic film layer is a fluorine-containing polymer; the patterned structure is a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0007] Optionally, when the patterned structure is a silicon-based material, the mass fraction of silicon element in the silicon-based material is 40% to 100%.

[0008] Optionally, when the patterned structure is a molybdenum-based material, the mass fraction of molybdenum element in the molybdenum-based material is 40% to 100%.

[0009] Optionally, the fluorine-containing polymer is a fluorocarbon polymer.

[0010] Optionally, the fluorine-containing polymer is a fluorosilicon polymer.

[0011] Optionally, the silicon-based material is one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, silicon oxide, silicon hydride, silicon nitride, silicon oxynitride, and silicon carbide.

[0012] Optionally, the material of the substrate is one of silicon, silicon carbide, quartz, and glass.

[0013] On the other hand, an embodiment of the present invention provides a method for preparing an imprint master, including: forming an etching layer on a substrate; forming a photoresist layer on the etching layer, and obtaining a patterned photoresist after exposure and development; spraying a fluorine-containing gas onto the etching layer, and forming a patterned structure and an imprint hydrophobic film layer after etching, wherein the imprint hydrophobic film layer covers the bottom wall and the side wall of the etching groove of the patterned structure, the material of the imprint hydrophobic film layer is a fluorine-containing polymer, and the mass fraction of fluorine element in the fluorine-containing gas is 10% to 90%; the patterned structure is a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0014] Optionally, the fluorine-containing gas is one or more of sulfur hexafluoride, carbon tetrafluoride, octafluorocyclobutane, trifluoromethane, octafluorocyclopentene, monochloro pentafluoroethane, and nitrogen trifluoride.

[0015] Optionally, the fluorine-containing polymer is a fluorocarbon polymer, and the sum of the mass fractions of fluorine element and carbon element in the fluorocarbon polymer is 10% to 100%.

[0016] The beneficial effects of the present invention include:

[0017] The present invention provides an imprint master, which includes a substrate, a patterned structure, and an imprint hydrophobic film layer. Among them, the patterned structure is set on the substrate as the micro-nano structure after the imprint master is formed. The formation of the imprint hydrophobic film layer can be synchronized with the formation of the patterned structure, that is, during the formation of the patterned structure, the fluorine element in the etching solution or etching gas will chemically react with the etching layer before the formation of the patterned structure, so as to form an imprint hydrophobic film layer made of fluoropolymer on the bottom wall and side walls of the etching grooves of the finally etched patterned structure. In order to form an imprint hydrophobic film layer made of fluoropolymer on the bottom wall and side walls of the patterned structure, the patterned structure needs to be made of silicon-based material or molybdenum-based material. Among them, when the patterned structure is made of silicon-based material, the mass fraction of silicon element in the silicon-based material is 10% to 100% (including 10% and 100%); when the patterned structure is made of molybdenum-based material, the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100% (including 10% and 100%). Thus, a dense fluoropolymer can be formed corresponding to each etching groove of the patterned structure, effectively avoiding the phenomenon of poor film formation quality caused by the shadow effect. At the same time, the source of fluorine gas is relatively wide, effectively reducing the cost of manufacturing the imprint master and facilitating the smooth demolding of the subsequent imprinted products.

[0018] The present invention also provides a method for preparing an imprint master, which includes forming an etching layer on a substrate; forming a photoresist layer on the etching layer, and obtaining a patterned photoresist after exposure and development; spraying a fluorine-containing gas on the etching layer and etching to form a patterned structure and an imprint hydrophobic film layer. Among them, the imprint hydrophobic film layer covers the bottom wall and side walls of the etching grooves of the patterned structure, the material of the imprint hydrophobic film layer is fluoropolymer, and the mass fraction of fluorine element in the fluorine-containing gas is 10% to 90%; the patterned structure is made of silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is made of molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%. Thus, a dense fluoropolymer can be formed corresponding to each etching groove of the patterned structure, effectively avoiding the phenomenon of poor film formation quality caused by the shadow effect. At the same time, the source of fluorine gas is relatively wide, effectively reducing the cost of manufacturing the imprint master. Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0020] Figure 1One of the state diagrams of an imprint master provided by an embodiment of the present invention;

[0021] Figure 2 Another state diagram of an imprint master provided by an embodiment of the present invention;

[0022] Figure 3 Yet another state diagram of an imprint master provided by an embodiment of the present invention;

[0023] Figure 4 A flowchart of a method for preparing an imprint master provided by an embodiment of the present invention.

[0024] Icons: 100 - substrate; 200 - etching layer; 210 - patterned structure; 211 - etching groove; 300 - photoresist; 310 - patterned photoresist; 400 - imprint hydrophobic film. Detailed Embodiments

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. It should be noted that, without conflict, the various features in the embodiments of the present invention can be combined with each other, and the combined embodiments are still within the protection scope of the present invention.

[0027] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0028] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the present invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be construed as indicating or implying relative importance.

[0029] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0030] In the description of the present invention, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0031] With the maturity of semiconductor technology and the development of imprinting technology, in the field of optics, especially in the field of micro-nano processing, there has emerged a technical direction of using dry etching to produce a master mold, and then coating an imprinting hydrophobic film and imprinting the finished product. Among them, the imprinting hydrophobic film plays a huge role in reducing the surface energy of the master mold and enabling the smooth demolding of the imprinted finished product. The imprinting hydrophobic film can reduce the friction between the master mold and the imprinted finished product, reduce the structural deformation and damage of the imprinted finished product, improve the service life of the master mold, and greatly reduce the average cost of the product.

[0032] Existing imprinting hydrophobic films are generally formed by crucible thermal evaporation. That is, the film material in the crucible is heated and evaporated onto the surface of the micro-nano structure. Since the depth of the micro-nano structure is generally about 1000 nm and the width is about 200 - 500 nm, and the ratio of the depth to the width reaches 2 to 5 times. Using the crucible thermal evaporation method, limited by the evaporation angle (usually > 60 degrees and cannot be vertically incident at a small angle), the side walls and bottoms of the micro-nano structures have poor coverage or even no coverage due to the shadow effect of the incident angle. Therefore, the method of thermally evaporating and coating the hydrophobic film has relatively poor film-forming quality on the side walls and bottoms of the micro-nano structures, which is not conducive to the smooth demolding of the imprinted finished product from the master mold.

[0033] Based on the above-mentioned defects of the imprinting hydrophobic film, this application proposes an imprinting master mold, so that by forming a hydrophobic film layer made of fluoropolymer material on the patterned structure, it is not only possible to avoid the phenomenon that the imprinting hydrophobic film layer cannot be covered due to the shadow effect, but also reduce the safety risk when using liquid glue for coating. At the same time, the raw materials are widely sourced, effectively reducing the manufacturing cost and facilitating large-scale promotion and use in enterprises.

[0034] On one hand, an embodiment of the present invention provides an imprint master, comprising: a substrate 100, on which a patterned structure 210 is provided, and an imprint hydrophobic film 400 layer is provided on the bottom wall and side walls within the etching grooves 211 of the patterned structure 210; the material of the imprint hydrophobic film 400 layer is a fluoropolymer; the patterned structure 210 is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure 210 is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0035] Exemplarily, as Figure 1 、 Figure 2 and Figure 3 shown, the imprint master includes a substrate 100, a patterned structure 210 and an imprint hydrophobic film 400 layer. Among them, the patterned structure 210 is disposed on the substrate 100 as the micro-nano structure after the imprint master is formed. The formation of the imprint hydrophobic film 400 layer can be synchronized with the formation of the patterned structure 210, that is, during the formation of the patterned structure 210, the fluorine element in the etching solution or etching gas will chemically react with the etching layer 200 before the formation of the patterned structure 210, so as to form an imprint hydrophobic film 400 layer made of a fluoropolymer on the bottom wall and side walls within the etching grooves 211 of the finally etched patterned structure 210. In order to form an imprint hydrophobic film 400 layer made of a fluoropolymer on the bottom wall and side walls of the patterned structure 210, the patterned structure 210 needs to be made of a silicon-based material or a molybdenum-based material. Among them, when the patterned structure 210 is made of a silicon-based material, the mass fraction of silicon element in the silicon-based material is 10% to 100% (including 10% and 100%); when the patterned structure 210 is made of a molybdenum-based material, the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100% (including 10% and 100%). Thus, a dense fluoropolymer can be correspondingly formed in each etching groove 211 of the patterned structure 210, effectively avoiding the phenomenon of poor film formation quality caused by the shadow effect. At the same time, the source of the fluorine-containing gas is relatively wide, effectively reducing the cost of manufacturing the imprint master.

[0036] The fluoropolymer has a low surface energy, and its mechanism includes: under the promotion of the surface energy difference, the perfluoroalkyl chain segments in the side chain are phase-separated from the hydrocarbon chain, aggregated towards the surface, and form a highly stable and ordered arrangement on the outermost surface, that is, crystallization or formation of a stable liquid crystal structure arrangement. At this time, the fluoroalkyl groups are closely arranged on the outermost surface and are not prone to surface reconstruction, thereby obtaining a surface with a stable low surface energy. For example, the surface energy of general organic substances is 11~80mJ / m 2 2, while the free energy of the polymer containing fluoroalkyl side chains is generally 11~30mJ / m 2, the polymer fluoropolymer material with low surface free energy makes its surface difficult to wet, having the characteristics of hydrophobicity and oleophobicity.

[0037] Optionally, when the patterned structure 210 is made of a silicon-based material, the mass fraction of silicon element in the silicon-based material is 40% to 100%.

[0038] Exemplarily, in order to further reduce the surface energy of the fluoropolymer imprinted hydrophobic film 400 layer and, at the same time, make the uniformity of the fluoropolymer imprinted hydrophobic film 400 layer in the etching groove 211 better, the mass fraction of silicon element in the patterned structure 210 of the silicon-based material can also be 40% to 100% (including 40% and 100%). The thickness of the etching layer 200 before forming the patterned structure 210 can be 100 nm to 2500 nm (including 100 nm and 2500 nm).

[0039] When the material of the above-mentioned patterned structure 210 or the material of the etching layer 200 before forming the patterned structure 210 is a silicon-based material, it can be one of single-crystalline silicon, polycrystalline silicon, amorphous silicon, silicon oxide, silicon hydride, silicon nitride, silicon oxynitride, and silicon carbide. Correspondingly, the proportion of the mass fraction of silicon element should be greater than or equal to 40%. And the source of silicon material is very extensive and the cost is low.

[0040] Optionally, the fluoropolymer can be a fluorocarbon polymer or a fluorosilicon polymer. In other embodiments, it can also be a homopolymer or a copolymer series of fluorinated acrylic resins, etc., as long as the fluorine-containing gas can react with the etching layer 200 during the process of forming the patterned structure 210 on the etching layer 200 to form a fluoropolymer with low surface energy. The following takes the fluorocarbon polymer as an example for illustrative description:

[0041] Using a fluorine-containing gas: octafluorocyclobutane (also known as perfluorocyclobutane, chemical formula: C4F8) as the fluorine-containing gas, using a silicon-based material as the etching layer 200, and using a plasma dry etching process to etch the etching layer 200 to form the patterned structure 210. At the same time, during the etching process, the fluorine element also undergoes a chemical reaction with the silicon-based material to form a uniform and dense fluorocarbon polymer on the bottom wall and side walls of the patterned structure 210. Among them, the mass fraction of fluorine element and carbon element in the fluorocarbon polymer can be greater than or equal to 50%, and the thickness of the fluorocarbon polymer imprinted hydrophobic film 400 layer can be between 0.5 nm and 20 nm (including 0.5 nm and 20 nm).

[0042] Optionally, when the patterned structure 210 is made of a molybdenum-based material, the mass fraction of molybdenum element in the molybdenum-based material is 40% to 100%.

[0043] Optionally, the material of the substrate 100 is one of silicon, silicon carbide, quartz, and glass.

[0044] On the other hand, an embodiment of the present invention provides a method for preparing an imprint master, including: forming an etching layer 200 on a substrate 100; forming a photoresist 300 layer on the etching layer 200, and obtaining a patterned photoresist 310 after exposure and development; spraying a fluorine-containing gas onto the etching layer 200 to form a patterned structure 210 and an imprint hydrophobic film 400 layer after etching, wherein the imprint hydrophobic film 400 layer covers the bottom wall and side walls of the etching grooves 211 of the patterned structure 210, the material of the imprint hydrophobic film 400 layer is a fluorine-containing polymer, and the mass fraction of fluorine element in the fluorine-containing gas is 10% to 90%; the patterned structure 210 is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure 210 is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0045] Exemplarily, as Figure 4 shown, in order to form an imprint master with a lower surface energy and a better quality of the imprint hydrophobic film 400 layer, the following provides a method for preparing an imprint master:

[0046] S010: Form an etching layer 200 on a substrate 100.

[0047] As Figure 1 shown, forming the etching layer 200 on the substrate 100 can be achieved by thermal evaporation deposition, chemical vapor deposition or physical vapor deposition on the substrate 100. At the same time, in order to ensure good adhesion between the etching layer 200 and the substrate 100, the substrate 100 can also be cleaned or plasma-treated before deposition to meet the requirements.

[0048] S020: Form a photoresist 300 layer on the etching layer 200, and obtain a patterned photoresist 310 after exposure and development.

[0049] As Figure 2 shown, after forming the etching layer 200 in S010, a layer of photoresist 300 is uniformly coated on the etching layer 200. It can be pre-baked on a baking machine or a hot plate to thermally cure the photoresist 300 layer and volatilize most of the solvents. Then, a UV lithography machine is used to align and expose the photoresist 300 layer through a mask plate. Sufficient UV exposure is carried out under the UV lithography machine to fully dissociate the non-graphic regions of the molecules in the photoresist 300, improving the resolution of the graphic boundary to form the final patterned photoresist 310. Then, it is post-baked on a baking machine or a hot plate to form the pattern. Immediately after post-baking, it is developed in a developing tank with a developer matching the photoresist 300, then washed in deionized water, and dried with clean compressed air or rotary evaporation; finally, it can be subjected to a hardening treatment on a baking machine or a hot plate.

[0050] S030: Spray a fluorine-containing gas onto the etching layer 200. After etching, a patterned structure 210 and an imprinted hydrophobic film 400 layer are formed. Among them, the imprinted hydrophobic film 400 layer covers the bottom wall and side walls of the etching grooves 211 of the patterned structure 210. The material of the imprinted hydrophobic film 400 layer is a fluorine-containing polymer, and the mass fraction of fluorine element in the fluorine-containing gas is 10% to 90%; the patterned structure 210 is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure 210 is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0051] As Figure 3 shown, place the overall structure of the etching layer 200 and the patterned photoresist 310 formed successively on the substrate in S020 in a dry etching machine, so that the overall structure is in a vacuum environment (such as 0.1 Pa - 20 Pa). Spray a fluorine-containing gas onto the etching layer 200. The fluorine-containing gas generates plasma (including electrons, neutrons, ions, molecules, and atoms, etc.) under the action of glow discharge. The plasma undergoes a physical-chemical reaction with the substrate, thereby etching the part of the etching layer 200 that is not attached to the photoresist 300. While etching, a fluorine-containing polymer is formed on the side walls and bottom wall of the etching groove 211. When the etching is completed, a uniform and dense imprinted hydrophobic film 400 layer will be formed on both the inner wall and side walls of the etching groove 211, and the imprinted hydrophobic film 400 layer is composed of a fluorine-containing polymer.

[0052] In order to form an imprinted hydrophobic film 400 layer on both the bottom wall and side walls of each etching groove 211 of the patterned structure 210, it is also possible to make the mass fraction of fluorine element in the fluorine-containing gas in the imprinted hydrophobic film 400 layer be 10% to 90%; the patterned structure 210 is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure 210 is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

[0053] Optionally, the fluorine-containing gas is one or more of sulfur hexafluoride, carbon tetrafluoride, octafluorocyclobutane, trifluoromethane, octafluorocyclopentene, monochloro pentafluoroethane, and nitrogen trifluoride. Whether it is one of them or a mixture of several of them, the proportion of the mass fraction of fluorine element should be in the range of 10% to 90%, and it can also be 50% to 85%, for example: 60%, 70%, and 80%.

[0054] Optionally, the fluorine-containing polymer is a fluorocarbon polymer, and the sum of the mass fractions of fluorine element and carbon element in the fluorocarbon polymer is 10% to 90%, and it can also be 50% to 85%, for example: 60%, 70%, and 80%.

[0055] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for preparing an imprint master, characterized in that, Comprising: An etching layer is formed on a substrate; A photoresist layer is formed on the etching layer, and after exposure and development, a patterned photoresist is obtained; A fluorine-containing gas is sprayed onto the etching layer, and after etching, a patterned structure and an imprinted hydrophobic film layer are formed. Among them, the imprinted hydrophobic film layer covers the bottom wall and side walls of the etching grooves of the patterned structure. The material of the imprinted hydrophobic film layer is a fluorine-containing polymer, and the mass fraction of fluorine element in the fluorine-containing gas is 10% to 90%; the patterned structure is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

2. The method for preparing an imprint master according to claim 1, wherein The fluorine-containing gas is one or more of sulfur hexafluoride, carbon tetrafluoride, octafluorocyclobutane, trifluoromethane, octafluorocyclopentene, monochloro pentafluoroethane, and nitrogen trifluoride.

3. The method for preparing an imprint master according to claim 1, wherein The fluorine-containing polymer is a fluorocarbon polymer, and the sum of the mass fractions of fluorine element and carbon element in the fluorocarbon polymer is 10% to 100%.

4. An imprint master, characterized in that, Prepared by using the imprinted master preparation method according to any one of claims 1 to 3, comprising: a substrate, on which a patterned structure is provided, and an imprinted hydrophobic film layer is provided on the bottom wall and side walls in the etching grooves of the patterned structure; the material of the imprinted hydrophobic film layer is a fluorine-containing polymer; the patterned structure is made of a silicon-based material, and the mass fraction of silicon element in the silicon-based material is 10% to 100%; or, the patterned structure is made of a molybdenum-based material, and the mass fraction of molybdenum element in the molybdenum-based material is 10% to 100%.

5. The imprint master according to claim 4, characterized in that, When the patterned structure is made of a silicon-based material, the mass fraction of silicon element in the silicon-based material is 40% to 100%.

6. The imprint master according to claim 4, wherein When the patterned structure is made of a molybdenum-based material, the mass fraction of molybdenum element in the molybdenum-based material is 40% to 100%.

7. The imprint master according to claim 4, wherein The fluorine-containing polymer is a fluorocarbon polymer.

8. The imprint master according to claim 4, characterized in that, The fluorine-containing polymer is a fluorosilicon polymer.

9. The imprint master according to claim 4, wherein The silicon-based material is one of single-crystalline silicon, polycrystalline silicon, amorphous silicon, silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide.

10. The imprint master according to claim 4, characterized in that, The material of the substrate is one of silicon, silicon carbide, quartz, and glass.

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