Light-emitting element

Abstract

The present invention discloses a light-emitting element, comprising a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a surrounding portion surrounding the semiconductor structure and exposing a first surface of the first semiconductor layer; a transparent conductive layer formed on a surface of the second semiconductor layer; an insulating structure including a Bragg reflector (DBR) structure formed on the first surface of the first semiconductor layer and covering the surface of the second semiconductor layer, including a first opening and a second opening; a first electrode formed on the surrounding portion and on the second semiconductor layer; and a second electrode formed on the second semiconductor layer; wherein the first electrode and the second electrode respectively include a bonding layer including platinum (Pt) for contacting solder, and the first electrode and the second electrode are separated by a distance of less than 50 microns.

Description

[0001] This application is a divisional application of the Chinese invention patent application (application number: 201810077979.0, application date: January 26, 2018, invention name: light-emitting element). Technical Field

[0002] The present invention relates to a structure of a light-emitting element, and in particular to a light-emitting element comprising a semiconductor structure and a bonding pad located on the semiconductor structure. Background Art

[0003] Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices. Their advantages include low power consumption, low heat generation, long operating life, shock resistance, compact size, fast response speed, and excellent optoelectronic properties, such as stable emission wavelength. Therefore, LEDs are widely used in household appliances, device indicator lights, and optoelectronic products. Summary of the Invention

[0004] The present invention provides a light-emitting element, comprising a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a surrounding portion surrounding the semiconductor structure and exposing a first surface of the first semiconductor layer; a transparent conductive layer formed on a surface of the second semiconductor layer; an insulating structure including a Bragg reflector (DBR) structure formed on the first surface of the first semiconductor layer and covering the surface of the second semiconductor layer, including a first opening and a second opening; a first electrode formed on the surrounding portion and on the second semiconductor layer; and a second electrode formed on the second semiconductor layer; wherein the first electrode and the second electrode respectively include a bonding layer of platinum (Pt) for contacting solder, and the first electrode and the second electrode are separated by a distance of less than 50 microns.

[0005] The present invention also provides a light-emitting element comprising a semiconductor structure, which includes a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a through hole exposing the first semiconductor layer; a first bonding pad formed on the first semiconductor layer; and a second bonding pad formed on the second semiconductor layer; wherein the first bonding pad and the second bonding pad respectively include platinum (Pt) or gold (Au) to contact a metal bump, the first bonding pad and the second bonding pad have substantially the same thickness, and the metal bump includes at least one material selected from the group consisting of tin, copper, silver, bismuth, indium, zinc and antimony.

[0006] The present invention also provides a light-emitting element, comprising a semiconductor structure, which includes a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a through hole exposing the first semiconductor layer; a first bonding pad formed on the first semiconductor layer; and a second bonding pad formed on the second semiconductor layer; wherein the first bonding pad and the second bonding pad are metal multilayer structures, each including a Ni layer directly contacting a metal bump, the first bonding pad and the second bonding pad have substantially the same thickness, and the metal bump includes at least one material selected from the group consisting of tin, copper, silver, bismuth, indium, zinc and antimony.

[0007] The present invention further provides a light-emitting element, comprising a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a surrounding portion surrounding the semiconductor structure and exposing a first surface of the first semiconductor layer; a transparent conductive layer formed on the surface of the second semiconductor layer; a first electrode formed on the surrounding portion and contacting the first semiconductor layer; a second electrode formed on the second semiconductor layer, the first electrode and / or the second electrode comprising an adhesive layer closest to the first semiconductor layer or the second semiconductor layer, the adhesive layer comprising a material including chromium (Cr), titanium (Ti) or rhodium (Rh); an insulating structure covering the first electrode and the second electrode, comprising a first opening to expose the first electrode and a second electrode; A second opening is formed to expose the second electrode, and includes two or more materials with different refractive indices alternately stacked to form a Bragg reflector (DBR) structure; a first thin pad is formed on the first opening and the first electrode of the insulating structure, and includes a thickness less than a thickness of the insulating structure; and a second thin pad is formed on the second opening and the second electrode of the insulating structure, and includes a thickness less than a thickness of the insulating structure, wherein the first thin pad and the second thin pad respectively include an upper surface lower than an upper surface of the insulating structure, the first thin pad and the second thin pad are formed within the first opening and the second opening, and extend to cover the upper surface of the insulating structure, wherein the first electrode and the second electrode respectively include a bonding layer of platinum (Pt) to contact the insulating structure.

[0008] The present invention further provides a light-emitting element, comprising a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a through hole passing through the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure and comprising a first insulating second opening to expose the second semiconductor layer; a transparent conductive layer formed in the first insulating second opening and extending upward to cover the first insulating structure; a reflective layer formed on the transparent conductive layer; a second insulating structure formed on the first insulating structure and comprising a second insulating second opening on the reflective layer, wherein In the embodiment, the second insulating structure includes a portion formed in the second insulating second opening, the second insulating second opening includes a groove to surround a portion of the second insulating structure; a first electrode formed in the through hole; a second electrode formed on the portion of the second insulating structure and extending into the second insulating second opening to contact the reflective layer; and a third insulating structure covering the first electrode, the second electrode and the semiconductor structure, wherein the first electrode and the second electrode each include a metal layer to contact the third insulating structure, the metal layer including a material having a surface tension value greater than 1500 dyne / cm and a standard reduction potential greater than 0.3 volts (V). BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 FIG. 1 is a top view of a light emitting element 1, 1a disclosed in one embodiment of the present invention;

[0010] Figure 2 is a cross-sectional view of a light emitting element 1 disclosed in one embodiment of the present invention;

[0011] Figure 3 is a cross-sectional view of a light-emitting element 1a disclosed in one embodiment of the present invention;

[0012] Figure 4A FIG1 is a top view of a light emitting element 2 disclosed in an embodiment of the present invention;

[0013] Figure 4B is a schematic three-dimensional diagram of a light-emitting package 1P according to an embodiment of the present invention;

[0014] Figure 4C is a bottom view of a light-emitting package 1P according to an embodiment of the present invention;

[0015] Figure 4D for Figure 4C Cross-sectional view of line segment XX;

[0016] Figure 5 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention;

[0017] Figure 6FIG. 4 is a schematic diagram of a light emitting device 4 according to an embodiment of the present invention.

[0018] Explanation of symbols:

[0019] 1, 1a, 2 Light-emitting element

[0020] 1P light-emitting package

[0021] 3 Light-emitting device

[0022] 4 Light-emitting device

[0023] 10a Semiconductor stack

[0024] 11a base plate

[0025] 11s exposed face

[0026] 20a First insulation structure

[0027] 30a Transparent conductive layer

[0028] 40a Reflective layer

[0029] 41a Barrier layer

[0030] 50a Second insulation structure

[0031] 51 Package substrate

[0032] 53 Insulation

[0033] 54 Reflective Structure

[0034] 60a contact layer

[0035] 70a Third insulation structure

[0036] 80a First thin pad

[0037] 90a Second thin pad

[0038] 100a through hole

[0039] 101a first semiconductor layer

[0040] 102a second semiconductor layer

[0041] 102s surface

[0042] 103a Active layer

[0043] 111a Surrounding portion

[0044] 201a first insulation first opening

[0045] 202a first insulating second opening

[0046] 301a outside

[0047] 401a outside

[0048] 500a Part of the second insulating structure

[0049] 501a Second insulation first opening

[0050] 502a Second insulation second opening

[0051] 511 First Gasket

[0052] 512 Second gasket

[0053] 602 Lampshade

[0054] 604 Reflector

[0055] 606 bearing part

[0056] 608 light-emitting units

[0057] 610 light emitting module

[0058] 612 lamp holder

[0059] 614 heat sink

[0060] 616 connection

[0061] 618 electrical connection components

[0062] 600a Ejector area

[0063] 601a First contact portion (first electrode)

[0064] 601A First Electrode

[0065] 602a Second contact portion (second electrode)

[0066] 602A Second Electrode

[0067] 701a First opening

[0068] 702a Second opening

[0069] 1000a Semiconductor structure

[0070] 1001a Second outer side wall

[0071] 1002a inner wall

[0072] 1003a First outer wall

[0073] 1011a first surface

[0074] 1012a Second surface

[0075] 6010 First bonding pad

[0076] 6011 First extension electrode

[0077] 6020 Second bonding pad

[0078] 6021 Second extension electrode

[0079] 900 Translucent Body

[0080] 901 Reflector

[0081] 902a, 902b metal bumps DETAILED DESCRIPTION

[0082] In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the relevant illustrations. However, the embodiments shown below are used to illustrate the light-emitting elements of the present invention, and the present invention is not limited to the following embodiments. In addition, the dimensions, materials, shapes, relative configurations, etc. of the components described in the embodiments of this specification are not limited to these unless otherwise specified, and are merely illustrative. The sizes or positional relationships of the components shown in the various figures may be exaggerated for the sake of clarity. Furthermore, in the following description, components of the same or similar nature are displayed with the same names and symbols in order to appropriately omit detailed descriptions.

[0083] Figure 1 1 and 1 a are top views of the light emitting elements 1 and 1 a disclosed in the first and second embodiments of the present invention. Figure 2 In the first embodiment of the present invention, Figure 1 1 is a cross-sectional view of the light emitting element 1 taken along line AA′. Figure 3 In the second embodiment of the present invention, Figure 1 The cross-sectional view of the light emitting element 1a shown along the line AA'. The light emitting elements 1 and 1a disclosed in the embodiment are light emitting diodes with a flip-chip structure. The light emitting elements 1 and 1a include the same or similar components, wherein the same or similar components are Figures 1 to 3 The same reference numerals are used in the following description. The light emitting element 1, 1a includes a substrate 11a; one or more semiconductor structures 1000a located on the substrate 11a; and a surrounding portion 111a surrounding the one or more semiconductor structures 1000a. The one or more semiconductor structures 1000a each include a semiconductor stack 10a, which includes a first semiconductor layer 101a, a second semiconductor layer 102a, and an active layer 103a located between the first semiconductor layer 101a and the second semiconductor layer 102a. Figure 1 、 Figure 2 and Figure 3As shown, the second semiconductor layer 102a and the active layer 103a surrounding a periphery of one or more semiconductor structures 1000a are partially removed, exposing a first surface 1011a of the first semiconductor layer 101a. In one embodiment, a portion of the first semiconductor layer 101a may be further removed to expose an exposed surface 11s. The first surface 1011a is disposed along the periphery of one or more semiconductor structures 1000a. In other words, the surrounding portion 111a includes a portion of the first surface 1011a of the first semiconductor layer 101a of the semiconductor structure 1000a and / or the exposed surface 11s of the substrate 11a, and thus the surrounding portion 111a is located at and / or surrounds the periphery of the semiconductor structure 1000a.

[0084] The light-emitting element 1, 1a includes one or more openings, such as through-holes 100a, that penetrate the second semiconductor layer 102a and the active layer 103a to expose one or more second surfaces 1012a of the first semiconductor layer 101a. The light-emitting element 1, 1a includes a contact layer 60a, which includes a first contact portion 601a and a second contact portion 602a. The first contact portion 601a is located on the first surface 1011a of the first semiconductor layer 101a, surrounds the active layer 103a, and is located at the periphery of the semiconductor structure 1000a. The first contact portion 601a contacts the first semiconductor layer 101a and forms an electrical connection therewith. The first contact portion 601a is located on one or more second surfaces 1012a of the first semiconductor layer 101a, covers one or more through-holes 100a, and contacts and forms an electrical connection therewith. In one embodiment of the present invention, when viewed from above from the light-emitting element 1, 1a, the contact layer 60a includes a total surface area that is greater than a total surface area of ​​the active layer 103a, and / or the contact layer 60a includes a peripheral perimeter that is greater than a peripheral perimeter of the active layer 103a. In one embodiment of the present invention, the contact layer 60a further includes a pin region 600a, which will be described below. In one embodiment of the present invention, the opening includes a groove. In one embodiment, the plurality of semiconductor structures 1000a are separated by one or more openings, such as grooves, or are connected to each other through the first semiconductor layer 101a. In one embodiment, the plurality of semiconductor structures 1000a are separated by a distance through one or more openings, there is no first semiconductor layer 101a to connect the plurality of semiconductor structures 1000a, and the one or more openings expose the substrate 11a.

[0085] In one embodiment of the present invention, the substrate 11a is a growth substrate for epitaxially growing the semiconductor stack 10a, including a gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, gallium nitride (GaN) wafer, or silicon carbide (SiC) wafer for growing aluminum gallium indium nitride (AlGaInN).

[0086] In one embodiment of the present invention, the substrate 11a includes a roughened surface located between the semiconductor structure 1000a and the substrate 11a, which can improve the light extraction efficiency of the light-emitting element. The exposed surface 11s of the substrate 11a includes a roughened surface (not shown). The roughened surface can be a variety of roughened morphologies, such as irregular roughening, microlenses, microarrays, scattering areas or other optical areas. For example, the roughened surface includes a plurality of protrusions, each protrusion includes a height between 0.5 and 2.5 μm, a width between 1 and 3.5 μm, and a pitch between the plurality of protrusions is between 1 and 3.5 μm.

[0087] In one embodiment of the present invention, the substrate 11a includes a sidewall having a flat surface and / or a rough surface to improve light extraction efficiency of the light-emitting element. In one embodiment of the present invention, the sidewall of the substrate 11a is inclined relative to a surface of the substrate 11a adjacent to the semiconductor structure 1000a to adjust the light field distribution of the light-emitting element.

[0088] In one embodiment of the present invention, the semiconductor stack 10a includes optical properties, such as emission angle or wavelength distribution, and electrical properties, such as forward voltage or reverse current. The semiconductor stack 10a is formed on the substrate 11 by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), physical vapor deposition (PVD), or ion plating. PVD includes sputtering or evaporation.

[0089] In one embodiment of the present invention, the first semiconductor layer 101a and the second semiconductor layer 102a may be cladding layers, and the two have different conductivity types, electrical properties, polarities, or provide electrons or holes according to the doped elements. For example, the first semiconductor layer 101a is an n-type electrical semiconductor layer, and the second semiconductor layer 102a is a p-type electrical semiconductor layer. The active layer 103a is formed between the first semiconductor layer 101a and the second semiconductor layer 102a. Electrons and holes recombine in the active layer 103a under the drive of an electric current and convert electrical energy into light energy, and then a light is emitted from the active layer 103a. The wavelength of the light emitted by the light-emitting element 1 or the light-emitting element 1a is adjusted by changing the physical and chemical composition of one or more layers of the semiconductor stack 10a. The material of the semiconductor stack 10a includes III-V semiconductor materials, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P, where 0 ≤ x, y ≤ 1; (x + y) ≤ 1. Depending on the material of the active layer 103a, when the material of the semiconductor stack 10a is AlInGaP series, the active layer 103a can emit red light with a wavelength between 610nm and 650nm, or yellow light with a wavelength between 530nm and 570nm. When the material of the semiconductor stack 10a is InGaN series, the active layer 103a can emit blue light or deep blue light with a wavelength between 400nm and 490nm, or green light with a wavelength between 490nm and 550nm. When the material of the semiconductor stack 10a is AlGaN series, the active layer 103a can emit ultraviolet light with a wavelength between 250nm and 400nm. The active layer 103a can be a single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH), or multi-quantum well (MQW). The material of the active layer 103a can be a neutral, p-type, or n-type semiconductor.

[0090] In one embodiment of the present invention, a buffer layer (not shown) is further included, formed between the semiconductor stack 10a and the substrate 11a, to improve the epitaxial growth quality of the semiconductor stack. In one embodiment of the present invention, aluminum nitride (AlN) is used as the buffer layer. In one embodiment, the AlN is formed by PVD, using a target composed of AlN. In another embodiment, an aluminum target is used to form AlN by PVD in a nitrogen source environment.

[0091] In one embodiment of the present invention, the semiconductor stack 10a includes a first outer wall 1003a and a second outer wall 1001a, wherein one end of the first surface 1011a is connected to the first outer wall 1003a, and the other end of the first surface 1011a is connected to the second outer wall 1001a. Figures 2 and 3 As shown, the first outer wall 1003a and the second outer wall 1001a are inclined relative to the first surface 1011a. In another embodiment, the first outer wall 1003a is substantially perpendicular to the first surface 1011a, and the second outer wall 1001a is inclined relative to the first surface 1011a. In one embodiment, the first outer wall 1003a is inclined relative to the exposed surface 11s of the substrate 11a. The first outer wall 1003a and the exposed surface 11s form an acute angle. In another embodiment, the first outer wall 1003a and the exposed surface 11s form an obtuse angle.

[0092] In one embodiment of the present invention, Figures 2 and 3As shown, the through hole 100a is formed by an inner sidewall 1002a and a second surface 1012a. The inner sidewall 1002a exposes the second semiconductor layer 102a and the active layer 103a, while the second surface 1012a exposes the first semiconductor layer 101a. One end of the inner sidewall 1002a is connected to the second surface 1012a of the first semiconductor layer 101a, and the other end of the inner sidewall 1002a is connected to a surface 102s of the second semiconductor layer 102a.

[0093] In one embodiment of the present invention, the light-emitting element 1 or 1a includes a first insulating structure 20a formed on the semiconductor structure 1000a by sputtering or evaporation. The first insulating structure 20a is formed on the first surface 1011a of the surrounding portion 111a, extends along the second outer sidewall 1001a, and covers the surface 102s of the second semiconductor layer 102a. The first insulating structure 20a is also formed on the second surface 1012a of the through hole 100a, extends along the inner sidewall 1002a, and covers the surface 102s of the second semiconductor layer 102a. In one embodiment, the first insulating structure 20a includes one or more layers. The first insulating structure 20a protects the sidewalls of the semiconductor structure 1000a, preventing the active layer 103a from being damaged by subsequent fabrication processes. When the first insulating structure 20a includes multiple layers, it includes two or more materials with different refractive indices alternately stacked to form a Bragg reflector (DBR) structure. The Bragg reflector (DBR) structure can protect the sidewalls of the semiconductor structure 1000a, and at the same time selectively reflect the light of a specific wavelength emitted by the active layer 103a to the outside of the light-emitting element 1 or 1a to increase the brightness. The first insulating structure 20a is formed of a non-conductive material, including an organic material, an inorganic material or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide) or fluorocarbon polymer (Fluorocarbon Polymer). Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

[0094] The first insulating structure 20 a includes one or more first insulating first openings 201 a to expose the first semiconductor layer 101 a , and one or more first insulating second openings 202 a to expose the second semiconductor layer 102 a .

[0095] In one embodiment of the present invention, the light-emitting element 1 or 1a includes a transparent conductive layer 30a formed on a surface 102s of the second semiconductor layer 102a. An outer side 301a of the transparent conductive layer 30a is spaced a distance from the first insulating structure 20a to expose the surface 102s of the second semiconductor layer 102a. In other words, the first insulating second opening 202a of the first insulating structure 20a exposes the second semiconductor layer 102a, and the transparent conductive layer 30a is formed in the first insulating second opening 202a to contact the second semiconductor layer 102a. Because the transparent conductive layer 30a is formed substantially over the entire surface of the second semiconductor layer 102a to contact the second semiconductor layer 102a, current can flow through the transparent conductive layer 30a and spread uniformly throughout the entire second semiconductor layer 102a. The transparent conductive layer 30a includes a material that is transparent to light emitted from the active layer 103a, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0096] In one embodiment of the present invention, the light-emitting element 1 or 1a includes a reflective structure formed on the transparent conductive layer 30a. The reflective structure includes a reflective layer 40a, a barrier layer 41a, or a combination of these layers. An outer side 401a of the reflective layer 40a can be located inside or outside the outer side 301a of the transparent conductive layer 30a, or can overlap or be flush with the outer side 301a of the transparent conductive layer 30a. An outer side (not shown) of the barrier layer 41a can be located inside or outside the outer side 401a of the reflective layer 40a, or can overlap or be flush with the outer side 401a of the reflective layer 40a.

[0097] In one embodiment of the present invention, the outer side 301a of the transparent conductive layer 30a overlaps with the first insulating structure 20a. Specifically, the first insulating second opening 202a of the first insulating structure 20a exposes the second semiconductor layer 102a. The transparent conductive layer 30a is formed in the first insulating second opening 202a to contact the second semiconductor layer 102a and extends upward from the portion within the first insulating second opening 202a to cover the first insulating structure 20a. The outer side 401a of the reflective layer 40a can be disposed inside or outside the outer side 301a of the transparent conductive layer 30a. The reflective layer 40a overlaps with the first insulating structure 20a.

[0098] In one embodiment of the present invention, the light emitting element 1 or 1 a does not include the transparent conductive layer 30 a , and the reflective structure is directly formed on the surface 102 s of the second semiconductor layer 102 a .

[0099] In one embodiment of the present invention, the reflective layer 40a includes one or more layers, such as a Deposition Bragg Reflector (DBR).

[0100] In one embodiment of the present invention, the reflective layer 40a comprises a metal material having a high reflectivity, such as silver (Ag), aluminum (Al), rhodium (Rh), or alloys thereof. High reflectivity refers to a reflectivity of 80% or greater at the wavelength of light emitted by the light-emitting element 1 or 1a.

[0101] In one embodiment of the present invention, a barrier layer 41a covers the reflective layer 40a to prevent oxidation of the reflective layer 40a, thereby reducing the reflectivity of the reflective layer 40a. The barrier layer 41a comprises a metal material, such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys thereof. The barrier layer 41a comprises one or more sublayers, such as titanium (Ti) / aluminum (Al) and / or titanium (Ti) / tungsten (W). In one embodiment of the present invention, the barrier layer 41a includes titanium (Ti) / aluminum (Al) on the side of the barrier layer 41a facing away from the reflective layer 40a, and titanium (Ti) / tungsten (W) on the other side of the barrier layer 41a adjacent to the reflective layer 40a. In one embodiment of the present invention, the reflective layer 40a and the barrier layer 41a are preferably made of a metal material other than gold (Au) and / or copper (Cu).

[0102] In one embodiment of the present invention, the light-emitting device 1 includes a second insulating structure 50a formed on the semiconductor structure 1000a by sputtering or evaporation. The second insulating structure 50a includes one or more second insulating first openings 501a to expose the first semiconductor layer 101a, and one or more second insulating second openings 502a to expose the reflective layer 40a, the barrier layer 41a, and / or the transparent conductive layer 30a.

[0103] In one embodiment of the present invention, a portion of the transparent conductive layer 30a, the reflective layer 40a, the barrier layer 41a, and / or the first insulating structure 20a is partially covered by the second insulating structure 50a. Another portion of the transparent conductive layer 30a, the reflective layer 40a, the barrier layer 41a, and / or the first insulating structure 20a is completely covered by the second insulating structure 50a.

[0104] In one embodiment of the present invention, a portion of the second insulating structure 50 a is formed in the first insulating second opening 202 a and directly contacts the surface 102 s of the second semiconductor layer 102 a .

[0105] In one embodiment of the present invention, the second insulating first opening 501a and the second insulating second opening 502a have different widths or numbers. The second insulating first opening 501a and the second insulating second opening 502a may have shapes including circular, elliptical, rectangular, polygonal, or any other shape. The location of one or more second insulating first openings 501a corresponds to the location of the through hole 100a.

[0106] In one embodiment of the present invention, from a top view of the light-emitting device 1 , the second insulating second opening 502 a is a trench surrounding a portion 500 a of the second insulating structure 50 a .

[0107] In one embodiment of the present invention, the second insulating structure 50a includes one or more layers. The second insulating structure 50a protects the sidewalls of the semiconductor structure 1000a and prevents the active layer 103a from being damaged by subsequent manufacturing processes. When the second insulating structure 50a includes multiple layers, the second insulating structure 50a includes two or more materials with different refractive indices stacked alternately to form a Bragg reflector (DBR) structure. The Bragg reflector (DBR) structure protects the sidewalls of the semiconductor structure 1000a and selectively reflects light of a specific wavelength emitted by the active layer 103a to the outside of the light-emitting element 1 or 1a to increase the brightness. The second insulating structure 50a is formed of a non-conductive material, including an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x The DBR structure includes a low refractive index layer and a high refractive index layer. The material of the high refractive index layer is selected from TiO2, ZnSe, Si3N4, Nb2O5 or Ta2O5, and the low refractive index material layer is selected from SiO2, MgF2 or CaF2.

[0108] In one embodiment of the present invention, the first insulating structure 20a comprises a different material than the second insulating structure 50a. For example, the first insulating structure 20a comprises Si3N4, and the second insulating structure 50a comprises SiO2. Because Si3N4 has a higher etch selectivity than SiO2, the first insulating structure 20a comprising Si3N4 can serve as a mask for forming one or more semiconductor structures 1000a. Because SiO2 has better step coverage than Si3N4, the second insulating structure 50a comprising SiO2 serves as a protective layer covering the side surfaces of the second semiconductor layer 102a and the active layer 103a.

[0109] In one embodiment of the present invention, the contact layer 60a is formed on the first semiconductor layer 101a and the second semiconductor layer 102a by sputtering or evaporation. In one embodiment, the first contact portion 601a of the contact layer 60a may be a first electrode, and the second contact portion 602a may be a second electrode. The first electrode 601a and the second electrode 602a are used for wire bonding or soldering to connect to an external power source. The first electrode 601a is formed in the through hole 100a, extends along the inner sidewall 1002a and covers a surface of the second insulating structure 50a. The first electrode 601a formed in the through hole 100a and the second insulating first opening 501a contacts the first semiconductor layer 101a and forms an electrical connection with the first semiconductor layer 101a. The second electrode 602a is formed on the semiconductor structure 1000a, and a portion 500a of the second insulating structure 50a is formed therebetween. The second electrode 602a extends from the portion 500a into the second insulating second opening 502a to contact the reflective layer 40a, the barrier layer 41a or the transparent conductive layer 30a. The second electrode 602a is electrically connected to the second semiconductor layer 102a through the reflective layer 40a, the barrier layer 41a or the transparent conductive layer 30a.

[0110] In one embodiment of the present invention, the light-emitting device 1 includes a third insulating structure 70a, which can be formed by sputtering or evaporation to cover the first electrode 601a, the second electrode 602a, and the semiconductor stack 10a. The third insulating structure 70a includes a first opening 701a exposing the first electrode 601a and a second opening 702a exposing the second electrode 602a. The third insulating structure 70a can be composed of one or more layers. The third insulating structure 70a protects the sidewalls of the semiconductor structure 1000a and prevents damage to the active layer 103a during subsequent fabrication processes. When the third insulating structure 70a comprises multiple layers, it can include two or more materials with different refractive indices stacked alternately to form a Bragg reflector (DBR) structure. The DBR structure protects the sidewalls of the semiconductor structure 1000a and reflects light of a specific wavelength emitted by the active layer 103a to the exterior of the light-emitting device 1 or 1a, thereby increasing brightness. The third insulating structure 70a is formed of a non-conductive material, including an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

[0111] In one embodiment of the present invention, the contact layer 60a further includes a pin region 600a surrounded and covered by a third insulating structure 70a. In one embodiment, the pin region 600a comprises the same material as the first electrode 601a and the second electrode 602a. The pin region 600a is electrically insulated from the semiconductor stack 10a by the second insulating structure 50a and the third insulating structure 70a. The pin region 600a is separated from the first electrode 601a and the second electrode 602a by a distance by the third insulating structure 70a. From a top view of the self-luminous element 1, the light-emitting element 1 comprises a rectangular shape with four corners. The pin region 600a is located at or near the intersection of two diagonals of the rectangular shape.

[0112] In one embodiment of the present invention, the first electrode 601a and / or the second electrode 602a comprises one or more layers. In one embodiment, to improve adhesion between the reflective structure and the contact layer 60a, the first electrode 601a and / or the second electrode 602a comprises an adhesive layer closest to the first semiconductor layer 101a or the second semiconductor layer 102a. The adhesive layer is made of chromium (Cr), titanium (Ti), or rhodium (Rh). In one embodiment, to improve the reflectivity of the contact layer 60a, the first electrode 601a and / or the second electrode 602a comprises a reflective layer located above the adhesive layer. The reflective layer is made of aluminum (Al) or silver (Ag). The first electrode 601a and / or the second electrode 602a comprises a bonding layer to improve the bonding strength between the contact layer 60a and the solder (not shown), and / or between the contact layer 60a and the third insulating structure 70a. The bonding layer comprises a metal material having a surface tension greater than 1500 dyne / cm and a standard reduction potential greater than 0.3 volts (V). For example, the bonding layer comprises platinum (Pt). The standard reduction potential is measured as a value of volts (V) relative to a standard hydrogen electrode at 298.15K (25°C) and 101.325 kPa (1 atmosphere, 1 atm). In one embodiment, the bonding layer comprises a metal material comprising a metal element that, under a reduction reaction, has a positive standard reduction potential relative to a standard hydrogen electrode. The surface tension is measured by measuring the force per unit length at the melting point of the metal material.

[0113] In one embodiment of the present invention, when the contact layer 60a is bonded to a package carrier, to prevent cracks from extending from the contact layer 60a into the semiconductor structure 1000a due to stress during bonding, the bonding layer preferably comprises a rigid material sufficient to withstand the bonding stress. In one embodiment, the bonding layer comprises a metal material having a Young's modulus greater than 100 GPa. For example, the bonding layer comprises platinum (Pt).

[0114] In one embodiment of the present invention, to increase the reflectivity of the contact layer 60a and improve the light extraction efficiency of the light-emitting element 1, the first electrode 601a and the second electrode 602a occupy 40% or more of the light-emitting area of ​​the light-emitting element 1. The first electrode 601a and the second electrode 602a are separated by a distance of less than 50 micrometers (μm); in one embodiment, the first electrode 601a and the second electrode 602a are separated by a distance of less than 30 micrometers (μm); and in another embodiment, the first electrode 601a and the second electrode 602a are separated by a distance of less than 10 micrometers (μm). From a top view of the light-emitting element 1, the second electrode 602a has a surface area smaller than that of the first electrode 601a. ​​The second electrode 602a is surrounded by the first electrode 601a. ​​The portion of the first electrode 601a formed on the surrounding portion 111a surrounds the semiconductor structure 1000a.

[0115] In one embodiment of the present invention, the first electrode 601a is formed on the surrounding portion 111a, extending from the first surface 1011a of the first semiconductor layer 101a along the second outer sidewall 1001a and covering the surface 102s of the second semiconductor layer 102a.

[0116] In one embodiment of the present invention, the first electrode 601a is formed on the surrounding portion 111a, extending from the exposed surface 11s of the substrate 11a, along the first surface 1011a and the second outer sidewall 1001a of the first semiconductor layer 101a, and covering the surface 102s of the second semiconductor layer.

[0117] In one embodiment of the present invention, in order to improve the bonding strength between the contact layer 60a and the solder (not shown), the first electrode 601a and / or the second electrode 602a has a thickness between 1 μm and 3 μm.

[0118] In one embodiment of the present invention, Figure 3 As shown, light-emitting element 1a has a structure similar to light-emitting element 1. Light-emitting element 1a further includes a first thin pad 80a formed in the first opening 701a of the third insulating structure 70a and on the first electrode 601a; and a second thin pad 90a formed in the second opening 702a of the third insulating structure 70a and on the second electrode 602a. The first thin pad 80a has a thickness less than that of the third insulating structure 70a. The second thin pad 90a has a thickness less than that of the third insulating structure 70a. For example, the first thin pad 80a and / or the second thin pad 90a have a thickness between 0.1 μm and 1 μm, and the third insulating structure 70a has a thickness between 0.5 μm and 2.5 μm.

[0119] In one embodiment of the present invention, to reduce the height difference between the first electrode 601a and the second electrode 602a, the second insulating structure 50a further includes a portion 500a formed below the second electrode 602a. The portion 500a of the second insulating structure 50a includes a plurality of sidewalls covered by the second electrode 602a.

[0120] In one embodiment of the present invention, to prevent an electrical short between the first electrode 601a and the second electrode 602a, the second opening 702a of the third insulating structure 70a is narrower than the second insulating second opening 502a of the second insulating structure 50a, and the second insulating second opening 502a of the second insulating structure 50a is narrower than the first insulating second opening 202a of the first insulating structure 20a. Specifically, a portion of the third insulating structure 70a is formed within the second insulating second opening 502a of the second insulating structure 50a. The third insulating structure 70a extends above the second electrode 602a. The second opening 702a of the third insulating structure 70a is formed on an upper surface of the second electrode 602a.

[0121] In one embodiment of the present invention, in order to increase the exposed surface of the second electrode 602a that can be used for flip-chip bonding, such as the area of ​​co-metal bonding or solder bonding, the second opening 702a of the third insulating structure 70a is wider than the second insulating second opening 502a of the second insulating structure 50a, and the second insulating second opening 502a of the second insulating structure 50a is narrower or wider than the first insulating second opening 202a of the first insulating structure 20a.

[0122] In one embodiment of the present invention, Figure 3 As shown, the first thin pad 80a or the second thin pad 90a includes an upper surface lower than an upper surface of the third insulating structure 70a. The entire first thin pad 80a or the second thin pad 90a is formed within the first opening 701a or the second opening 702a.

[0123] In one embodiment of the present invention, the first thin pad 80a or the second thin pad 90a includes a top surface that is higher than a top surface of the third insulating structure 70a. The first thin pad 80a or the second thin pad 90a is formed within the first opening 701a or the second opening 702a and extends over the top surface of the third insulating structure 70a.

[0124] In one embodiment of the present invention, the first thin pad 80 a or the second thin pad 90 a extending to cover the upper surface of the third insulating structure 70 a includes a thickness smaller than a thickness of the third insulating structure 70 a .

[0125] In one embodiment of the present invention, the first thin pad 80a includes a projected area on the substrate 11a that is smaller than a projected area of ​​the first contact portion 601a on the substrate 11a. The second thin pad 90a includes a projected area on the substrate 11a that is smaller or larger than a projected area of ​​the second contact portion 602a on the substrate 11a.

[0126] In one embodiment of the present invention, the first thin solder pad 80a and the second thin solder pad 90a are separated by a distance greater than 50 micrometers (μm). The ejector pin region 600a is located between the first thin solder pad 80a and the second thin solder pad 90a, and between the first contact portion 601a and the second contact portion 602a. In other words, the ejector pin region 600a is not covered by the first thin solder pad 80a and the second thin solder pad 90a, and is separated from the first contact portion 601a and the second contact portion 602a.

[0127] Figure 4A FIG1 is a top view of a light emitting element 2 according to an embodiment of the present invention. For clarity, each layer is drawn with a solid line regardless of whether the material is opaque, transparent, or translucent.

[0128] Light-emitting element 2 includes a substrate (not shown), a semiconductor structure 1000a, a first electrode 601A, a second electrode 602A, and a third insulating structure 70a. The substrate, semiconductor structure 1000a, and third insulating structure 70a of light-emitting element 2 are similar to the substrate 11a, semiconductor structure 1000a, and third insulating structure 70a of light-emitting element 1, 1a. To improve light extraction efficiency and current spreading of light-emitting element 2, light-emitting element 2 includes a first electrode 601A and a second electrode 602A, wherein the first electrode 601A and the second electrode 602A occupy approximately 10-20% of the light-emitting area of ​​light-emitting element 2. The first electrode 601A includes a first bonding pad 6010 and one or more first extension electrodes 6011 extending from the first bonding pad 6010. The second electrode 602A includes a second bonding pad 6020 and one or more second extension electrodes 6021 extending from the second bonding pad 6020. The plurality of first extension electrodes 6011 and the plurality of second extension electrodes 6021 do not overlap with each other.

[0129] The third insulating structure 70a covers the upper surface and multiple side surfaces of the semiconductor structure 1000a. In this embodiment, the first electrode 601A has two first extended electrodes 6011 and the second electrode 602A has two extended electrodes 6021. The third insulating structure 70a covers the first extended electrode 6011 and the second extended electrode 6021, and exposes part of the surface of the first bonding pad 6010 and the second bonding pad 6020 (the oblique line area) through the first opening 701a and the second opening 702a respectively. In one embodiment, the first semiconductor layer 101a is an n-type semiconductor layer, the second semiconductor layer 102a is a p-type semiconductor layer, and the third insulating structure 70a covers the n-type semiconductor layer and the p-type semiconductor layer (refer to Figure 3 ).

[0130] In one embodiment, the first bonding pad 6010 and the second bonding pad 6020 are a metal multilayer structure, such as Cr / Al / Cr / Al / Ni / Pt, Cr / Al / Cr / Al / Ni / Au, Cr / Al / Cr / Al / Ni / Pt / Au, or Ti / Al / Ti / Al / Ni / Pt / Au. The Pt layer or the Au layer directly contacts the third insulating structure 70a and the metal bumps 902a and 902b (shown in FIG. Figure 4C or Figure 4D Because the Pt layer or Au layer reacts with the metal bump (e.g., solder) to form intermetallic compounds (IMCs), scanning electron microscopy (SEM) analysis may not detect the Pt layer or Au layer or the IMC layer. In one embodiment, when SEM analysis is used, the IMC layer is not detected and the Ni layer directly contacts the metal bump. In one embodiment, the Pt layer or Au layer does not completely react with the metal bump and can be detected by SEM.

[0131] Figure 4B A perspective schematic diagram of a light-emitting package 1P is shown. Figure 4C A bottom view of the light emitting package 1P is shown. Figure 4D show Figure 4C The light emitting package 1P includes a light emitting device 1A, a light-transmitting body 900, a reflector 901 and metal bumps 902a and 902b. Figure 4BThe exposed first bonding pad 6010, exposed second bonding pad 6020, and substrate 11a are shown. In an actual product, only the reflector 901 and metal bumps 902a and 902b are visible from the bottom view. Metal bump 902a has a first area, metal bump 902b has a second area, and the light-emitting package 1P has a third area. The first area accounts for 0.5-3% (e.g., 1.15%, 1.75%, 2%, or 3%) of the third area. The second area accounts for 0.5-3% (e.g., 1.15%, 1.75%, 2%, or 3%) of the third area. Therefore, the total area of ​​metal bumps 902a and 902b accounts for 1-6% (e.g., 2.3%, 3.5%, 4%, or 6%) of the third area of ​​the light-emitting package 1P.

[0132] For example, the light emitting package 1P is substantially rectangular and has a length (L) and a width (W). The third area is measured as length (L) × width (W). The metal bump is substantially elliptical and has a maximum length (L) and a maximum width (W), and is measured from the bottom view. In other words, the maximum length and the maximum width are obtained from the bottom view. Figure 4D The first area is measured as length (l1) x width (w1). The second area is measured as length (l2) x width (w2).

[0133] For simplicity, the substrate 11a and the semiconductor stack 10a are shown in FIG. Figure 4D , and other structures (such as insulating structures 20a, 50a, 70a) are not shown. Figure 4D For related descriptions, please refer to Figure 2 or Figure 3 Furthermore, the first bonding pad 6010 and the second bonding pad 6020 have substantially the same thickness, or the second bonding pad 6020 has a thickness greater than that of the first bonding pad 6010. The metal bump 902b has a thickness greater than that of the metal bump 902a or is equal to the thickness of the metal bump 902a.

[0134] like Figure 4DAs shown, light-transmitting body 900 covers side surface 11a1 of substrate 11a. Metal bumps 902a and 902b are formed on first bonding pad 6010 and second bonding pad 6020, respectively. Specifically, metal bump 902a directly contacts a portion of the sidewall of first bonding pad 6010 and the bottom surface of first bonding pad 6010. Metal bump 902b directly contacts a portion of the sidewall of second bonding pad 6020 and the bottom surface of second bonding pad 6020. Reflector 901 covers a portion of the sidewalls of metal bumps 902a and 902b. Reflector 901 also covers portions of the sidewalls of first bonding pad 6010 and second bonding pad 6020, which are not covered by metal bumps 902a and 902b.

[0135] The metal bumps (902a, 902b) are lead-free solders comprising at least one material selected from the group consisting of tin, copper, silver, bismuth, indium, zinc, and antimony. The height of the metal bumps (e.g., H1) is between 20 and 150 μm. In one embodiment, the metal bumps are formed by a reflow soldering process. Solder paste is placed on the bonding pads and then heated in a reflow oven to melt the solder paste and create a joint. The solder paste may comprise tin-silver-copper, tin-antimony, or gold-tin and have a melting point greater than 215°C, or greater than 220°C, or between 215 and 240°C (e.g., 217°C, 220°C, 234°C). In addition, the peak temperature during the reflow process (the peak temperature usually occurs in the reflow zone) is greater than 250° C., or greater than 260° C., or between 250° C. and 270° C. (eg, 255° C., 265° C.).

[0136] The reflector 901 is an electrical insulator and includes a first matrix and a plurality of reflective particles mixed in the matrix (not shown). The first matrix has a matrix material with a silicon base (silicone-based material) or a matrix material with an epoxy resin base (epoxy-based material), and has a refractive index (n) between 1.4 and 1.6 or 1.5 and 1.6. The reflective particles include titanium dioxide, silicon dioxide, aluminum oxide, zinc oxide, or zirconium dioxide. In one embodiment, when the light emitted by the semiconductor stack 10a hits the reflector 901, the light is reflected and this reflection is called diffuse reflection. In addition to the reflective function, the reflector 901 can also serve as a mechanical load and withstand the stress generated by the light-emitting package 1P during operation.

[0137] The light-transmitting body 900 comprises a silicon-based matrix material or an epoxy-based matrix material. Furthermore, the light-transmitting body 900 may include a plurality of wavelength conversion particles (not shown) and / or diffusion powder particles dispersed therein to absorb the first light emitted by the semiconductor stack 10a and convert it into a second light having a different spectrum from the first light. The first light and the second light are mixed to produce a third light. In this embodiment, the third light has a color point coordinate (x, y) in the CIE 1931 chromaticity diagram, where 0.27 ≤ x ≤ 0.285 and 0.23 ≤ y ≤ 0.26. In another embodiment, the first light and the second light are mixed to produce a third light, such as white light. Depending on the weight percentage concentration and type of wavelength conversion particles, the light-emitting package can emit white light in a thermally stable state, with a relative color temperature (CCT) ranging from 2200K to 6500K (e.g., 2200K, 2400K, 2700K, 3000K, 5000K, 5700K, and 6500K), a color point coordinate (x, y) falling within the range of seven MacAdam ellipses in the CIE 1931 chromaticity diagram, and a color rendering index (CRI) greater than 80 or greater than 90. In another embodiment, the first light and the second light can be mixed to produce violet, amber, green, yellow, or other non-white light colors.

[0138] The wavelength conversion particles have a particle size of 10nm to 100μm and may contain one or more types of inorganic phosphors, organic fluorescent colorants, semiconductor materials, or a combination of the above materials. Inorganic phosphor materials include but are not limited to yellow-green phosphors or red phosphors. The components of the yellow-green phosphor are, for example, aluminum oxide (YAG or TAG), silicates, vanadates, alkaline earth metal selenides, or metal nitrides. The components of the red phosphor are, for example, fluorides (K2TiF6:Mn 4+ 、K2SiF6:Mn 4+), silicates, vanadates, alkaline earth metal sulfides (CaS), metal oxynitrides, or mixtures of tungstate and molybdate families. The weight percentage concentration (w / w) of the wavelength conversion particles in the matrix is ​​between 50% and 70%. The semiconductor material comprises a semiconductor material of nano-sized crystals (nanocrystal), such as a quantum dot (quantum-dot) light-emitting material. The quantum dot light-emitting material can be selected from zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), etc. s), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), lead sulfide (PbS), indium antimonide (InSb), lead telluride (PbTe), lead selenide (PbSe), antimony telluride (SbTe), zinc cadmium selenide sulfide (ZnCdSeS), copper indium sulfide (CuInS), cesium lead chloride (CsPbCl3), cesium lead bromide (CsPbBr3), and cesium lead iodide (CsPbI3).

[0139] The diffusion powder includes titanium dioxide, zirconium oxide, zinc oxide or aluminum oxide, and is used to scatter light emitted by the semiconductor stack 10 a.

[0140] Figure 5 The figure is a schematic diagram of a light-emitting device 3 according to one embodiment of the present invention. The light-emitting element 1, 1a, or 2 described in the aforementioned embodiments is flip-chip mounted on a first pad 511 and a second pad 512 of a packaging substrate 51. The first pad 511 and the second pad 512 are electrically insulated by an insulating portion 53 comprising an insulating material. Flip-chip mounting is performed with the growth substrate 11a facing upward, the growth substrate side being the primary light extraction surface. To increase the light extraction efficiency of the light-emitting device, a reflective structure 54 may be provided around the light-emitting element 1, 1a.

[0141] Figure 6 FIG4 is a schematic diagram of a light-emitting device 4 according to an embodiment of the present invention. Light-emitting device 4 is a bulb lamp comprising a lampshade 602, a reflector 604, a light-emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616, and an electrical connection element 618. Light-emitting module 610 includes a carrier 606 and a plurality of light-emitting units 608 disposed thereon. Light-emitting units 608 may be light-emitting elements 1, 1a, 2, or light-emitting device 3 described in the aforementioned embodiments.

[0142] The embodiments listed in the present invention are only used to illustrate the present invention and are not used to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention do not depart from the spirit and scope of the present invention.

Claims

1. A light-emitting element, characterized in that: Include: A semiconductor structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a through hole passing through the second semiconductor layer and the active layer and exposing the first surface of the first semiconductor layer; a transparent conductive layer formed on the second surface of the second semiconductor layer; an insulating structure comprising a Bragg reflector (DBR) structure and comprising at least a first insulating structure and a third insulating structure, wherein the first insulating structure is formed on the first surface of the first semiconductor layer and covers the second surface of the second semiconductor layer, and comprises a first opening of the first insulating structure formed on the through hole and a second opening of the first insulating structure formed on the second surface of the second semiconductor layer; a first electrode formed on the through hole and the second semiconductor layer; a second electrode formed on the transparent conductive layer, wherein the first electrode and the second electrode do not overlap each other and are separated by a distance less than 50 micrometers; as well as The third insulating structure is formed on the first electrode and the second electrode, and has a first opening of the third insulating structure exposing a portion of the first electrode and a second opening of the third insulating structure exposing a portion of the second electrode. A second thin pad is formed in the second opening of the third insulating structure, wherein the second thin pad includes an upper surface that is not covered by the third insulating structure and is lower than an upper surface of the third insulating structure, and the second thin pad has a thickness that is less than a thickness of the third insulating structure.

2. The light-emitting element as claimed in claim 1, wherein the first electrode and / or the second electrode comprises an adhesive layer closest to the first semiconductor layer or the second semiconductor layer, and a material of the adhesive layer comprises chromium (Cr), titanium (Ti) or rhodium (Rh). 3 . The light-emitting element as claimed in claim 2 , wherein the first electrode and / or the second electrode comprises a reflective layer located above the adhesive layer, and a material of the reflective layer comprises aluminum (Al) or silver (Ag). 4 . The light emitting element as claimed in claim 1 , wherein the first electrode and the second electrode respectively comprise a bonding layer for contacting with solder, the bonding layer comprising a metal material having a surface tension greater than 1500 dyne / cm. The light-emitting element as claimed in claim 4 , wherein the metal material has a standard reduction potential greater than 0.3 V. 6 . The light emitting device as claimed in claim 4 , wherein the bonding layer comprises a metal material having a Young's modulus greater than 100 GPa. 7 . The light-emitting element as claimed in claim 1 , wherein the first electrode and the second electrode occupy more than 40% of a light-emitting area of ​​the light-emitting element. 8 . The light-emitting element as claimed in claim 1 , wherein, viewed from a top view of the light-emitting element, the second electrode comprises a surface area smaller than a surface area of ​​the first electrode. 9 . The light emitting device as claimed in claim 1 , further comprising a first thin pad formed in the first opening of the third insulating structure and not covered by the third insulating structure, wherein the first thin pad has a thickness smaller than the thickness of the third insulating structure. 10 . The light emitting element as claimed in claim 1 , further comprising a first thin pad formed in the first opening of the third insulating structure and not covered by the third insulating structure, wherein the first thin pad comprises an upper surface lower than an upper surface of the third insulating structure. 11 . The light-emitting element as claimed in claim 1 , wherein the first electrode and the second electrode occupy 10-20% of a light-emitting area of ​​the light-emitting element. 12 . The light emitting device as claimed in claim 1 , wherein a portion of the second thin pad covers a sidewall of the second opening of the third insulating structure from an upper surface of the third insulating structure.

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