Semiconductor device structure and filters

Abstract

This invention provides a semiconductor device structure and a filter, wherein the semiconductor device structure includes: a first substrate on which at least one semiconductor device is formed; a second substrate bonded to the first substrate, a cavity being formed between the first substrate and the second substrate, at least one first inductor layer being formed on one side of the second substrate facing the first substrate, at least one first inductor being formed in each first inductor layer, and the first inductor being formed within the cavity or on the second substrate, and the semiconductor device being electrically connected to the first inductor.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically to a semiconductor device structure and a filter. Background Technology

[0002] Inductors are required in various circuits, such as filters. A common type of filter is... Figure 1 As shown, in each parallel resonant branch, each parallel resonator 1A to 1D needs to be connected to inductors 2A to 2D and then grounded to improve filtering performance.

[0003] Currently, inductors are typically implemented in printed circuit boards, such as... Figure 2 As shown, for example, an inductor can be fabricated in printed circuit board 3, and a resonator can be fabricated in substrates 4A and 4B, which are electrically connected to printed circuit board 3. Printed circuit board 3 may include multiple layers. Figure 2 The diagram shows four printed circuit board layers M1 to M4, inductors can be formed in these layers. However, a large number of inductors require space on multiple printed circuit boards, thus increasing the package size. Summary of the Invention

[0004] In view of this, embodiments of the present invention provide a semiconductor device structure and a filter to solve the problem of large package size of semiconductor device structures in the prior art.

[0005] According to a first aspect, embodiments of the present invention provide a semiconductor device structure, comprising: a first substrate on which at least one semiconductor device is formed; a second substrate bonded to the first substrate, a cavity being formed between the first substrate and the second substrate, at least one first inductor layer being formed on one side of the second substrate facing the first substrate, at least one first inductor being formed in each first inductor layer, and the first inductor being formed within the cavity or on the second substrate, wherein the semiconductor device is electrically connected to the first inductor.

[0006] Optionally, a recess is formed on the side of the first substrate facing the second substrate, and the semiconductor device is formed in the recess or on the first substrate; and / or a recess is formed on the side of the second substrate facing the first substrate, and the first inductor layer is formed in the recess or on the second substrate; and / or a bonding layer between the first substrate and the second substrate forms the cavity between the first substrate and the second substrate.

[0007] Optionally, the second substrate is doped with a metal element.

[0008] Optionally, at least one conductive via is formed in the second substrate, one end of the conductive via is electrically connected to the first inductor, and the other end of the conductive via is electrically connected to the outside.

[0009] Optionally, the first inductor is a spiral conductive coil.

[0010] Optionally, the semiconductor device structure further includes: at least one third substrate, the third substrate closest to the second substrate being bonded to the second substrate, and each adjacent third substrate being bonded to each other, and at least one second inductor layer being formed between each adjacent third substrate and between the third substrate closest to the second substrate and the second substrate, each second inductor layer having at least one second inductor formed therein, and the second inductor between the third substrate closest to the second substrate and the second substrate being electrically connected to the first inductor or the semiconductor device.

[0011] Optionally, each of the third substrates has at least one conductive via formed therein, and the two ends of the second inductor between adjacent third substrates are electrically connected to the conductive via in the adjacent third substrate; or one end of the second inductor between the third substrate closest to the second substrate and the second substrate is electrically connected to the conductive via in the second substrate, and the other end is electrically connected to the conductive via in the third substrate closest to the second substrate; or one end of the conductive via in the third substrate furthest from the second substrate is electrically connected to the second inductor on the inside, and the other end is electrically connected to the outside.

[0012] Optionally, the second inductor is a spiral conductive coil.

[0013] Optionally, at least one of the third substrates is doped with a metal element.

[0014] Optionally, the exterior is a printed circuit board.

[0015] Optionally, the semiconductor device is a resonator.

[0016] According to a second aspect, embodiments of the present invention provide a filter comprising the semiconductor device structure described in any one of the first aspects above.

[0017] The semiconductor device structure and filter according to embodiments of the present invention can reduce the number of printed circuit board layers and thus reduce the package size by forming an inductor in the cavity between the first substrate and the second substrate or forming an inductor on the second substrate, without forming an inductor on the printed circuit board.

[0018] Furthermore, the semiconductor device structure according to embodiments of the present invention forms a recess on a first substrate and / or a second substrate, thereby enabling the formation of an inductor within the cavity formed by the recess, which can further reduce the package size. Attached Figure Description

[0019] The features and advantages of the invention will be more clearly understood by referring to the accompanying drawings, which are schematic and should not be construed as limiting the invention in any way. In the drawings:

[0020] Figure 1 A schematic diagram of the filter's circuit structure is shown;

[0021] Figure 2 A schematic diagram of the circuit structure for implementing an inductor in the prior art is shown;

[0022] Figure 3 A schematic diagram of a semiconductor device structure according to an embodiment of the present invention is shown;

[0023] Figure 4 A top view schematic diagram of an inductor in a semiconductor device structure according to an embodiment of the present invention is shown;

[0024] Figure 5 A schematic diagram of a semiconductor device structure according to another embodiment of the present invention is shown;

[0025] Figure 6 A schematic diagram of an alternative embodiment of a semiconductor device structure according to yet another embodiment of the present invention is shown;

[0026] Figure 7 A schematic diagram of another alternative embodiment of a semiconductor device structure according to yet another embodiment of the present invention is shown;

[0027] Figure 8 A schematic diagram of a semiconductor device structure according to another embodiment of the present invention is shown. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] Figure 3A semiconductor device structure according to an embodiment of the present invention is illustrated. This semiconductor device structure may include a first substrate 11 and a second substrate 12, wherein a semiconductor device 14 is formed on the first substrate 11. Those skilled in the art will understand that multiple semiconductor devices 14 may be formed on the first substrate 11; these multiple semiconductor devices 14 may be the same semiconductor device or different semiconductor devices. In the semiconductor device structure of this embodiment, the first substrate 11 and the second substrate 12 are bonded together by a bonding layer 13, for example, through a gold-gold bonding process, thereby forming a cavity between the first substrate 11 and the second substrate 12. Figure 3 In one example, a recess is formed on the side of the second substrate 12 facing the first substrate 11, thereby forming a cavity between the first substrate 11 and the second substrate 12. In this case, the first inductor layer 15 formed on the second substrate 12 is either formed within the recess or on the second substrate 12. Those skilled in the art should understand that the present invention is not limited thereto. In one alternative embodiment, a recess can be formed on the side of the first substrate 11 facing the second substrate 12, thereby forming a cavity between the first substrate 11 and the second substrate 12. In this case, the semiconductor device 14 is formed within the recess or on the first substrate 11. In another alternative embodiment, recesses can be formed on opposite sides of both the first substrate 11 and the second substrate 12, thereby forming a cavity between the first substrate 11 and the second substrate 12. In yet another alternative embodiment, it is not necessary to form recesses on the first substrate 11 and the second substrate 12. By providing a bonding layer 13 of sufficient height, a cavity of sufficient height can also be formed between the first substrate 11 and the second substrate 12 to accommodate the device formed on the opposite sides of the first substrate 11 and the second substrate 12.

[0030] Continue as Figure 3 As shown, a first inductor layer 15 is formed on the side of the second substrate 12 facing the first substrate 11. Figure 3The example shows only one first inductor layer 15, in which a first inductor is formed. Those skilled in the art will understand that multiple first inductor layers 15 can be formed when more inductors are needed, with each first inductor layer 15 containing a first inductor. Multiple first inductor layers can be fabricated in various ways. In one alternative embodiment, a first metal layer is first deposited on the second substrate 12, etched into the desired shape to form an inductor, then an insulating layer is deposited on the first metal layer, and vias are etched into this insulating layer. A second metal layer is then deposited on the insulating layer and etched into the desired shape to form an inductor. The connection between the first and second metal layers is achieved through vias in the insulating layer. In another alternative embodiment, a deeper trench and a shallower trench spaced apart are first etched on the second substrate 12, the trench shape being the desired inductor shape, and then a metal layer is filled, thereby forming multiple inductors at different depths on the second substrate 12. The first inductor on the second substrate 12 is formed in the cavity between the first substrate 11 and the second substrate 12 or on the second substrate 12, and the semiconductor device 14 is electrically connected to the first inductor. Figure 3 In the example, semiconductor device 14 is electrically connected to the first inductor via conductive post 16. In one alternative embodiment, a bonding process, such as gold-gold bonding, can be used to form the conductive post 16; in another alternative embodiment, an electroplating process can be used to form the conductive post 16.

[0031] The semiconductor device structure of this invention forms an inductor in the cavity between the first substrate and the second substrate or on the second substrate, without forming the inductor on the printed circuit board, thereby reducing the number of printed circuit board layers and thus reducing the package size.

[0032] Furthermore, the semiconductor device structure of the present invention forms a recess on the first substrate and / or the second substrate, thereby enabling the formation of an inductor within the cavity formed by the recess, which can further reduce the package size.

[0033] In an optional embodiment of the present invention, metal elements may be doped into the second substrate 12 to shield the inductor and semiconductor device from interference from external signals.

[0034] In one optional embodiment of the present invention, such as Figure 3 As shown, one or more conductive vias 17 are formed in the second substrate 12. One end of the conductive via 17 is electrically connected to the first inductor in the first inductor layer 15, and the other end of the conductive via 17 is electrically connected to the outside. Figure 3 In the example, it is electrically connected to printed circuit board 18.

[0035] In an optional embodiment of the present invention, the first inductor in the first inductor layer 15 is a spiral conductive coil. Figure 4 A top view of the first inductor is shown. The two ends of the first inductor are electrically connected to a conductive post 16 and a conductive via 17, respectively, thereby connecting the first inductor in series between the semiconductor device 14 and the printed circuit board 18. The shape of the first inductor is not limited to... Figure 4 As shown, the first inductor can also be a spiral conductive coil composed of arc-shaped lines, or a spiral conductive coil composed of lines of other regular or irregular shapes. In this embodiment, the inductance value of the first inductor can be adjusted by changing the width, length, thickness, number of coils, material, etc. of the conductive coil. When the first inductor layer 15 is multi-layered, the inductance value can be increased by connecting the first inductors in each first inductor layer in series.

[0036] Figure 5 A semiconductor device structure according to another embodiment of the present invention is shown, and... Figure 3 The difference in the illustrated embodiment is that the semiconductor device formed on the first substrate 11 is a resonator, and a multilayer first inductor layer is formed on the side of the second substrate 12 facing the first substrate 11. Figure 5 As shown, the resonator may include a first electrode 21, a piezoelectric layer 22 located on the first electrode 21, and a second electrode 23 located on the piezoelectric layer 22. The resonator is formed on a resonator cavity 24 of a first substrate 11. Figure 5 In the example, two resonators are formed on the first substrate 11. Those skilled in the art will understand that more or fewer resonators are feasible. Figure 5 In this example, one end of the conductive post 16 is connected to the first electrode 21 of the resonator. In other alternative embodiments, one end of the conductive post 16 may also be connected to the second electrode 23 of the resonator. Figure 5 In the example, three first inductor layers, namely first inductor layers 15A to 15C, are formed on the side of the second substrate 12 facing the first substrate 11. Those skilled in the art will understand that more or fewer first inductor layers are feasible. The other end of the conductive post 16 is electrically connected to the first inductor layer 15C. Figure 5In the example, two resonators are formed on the first substrate 11. Correspondingly, two first inductors can be formed on each of the first inductor layers 15A to 15C to be electrically connected to the two resonators on the first substrate 11, respectively. That is, the number of first inductors formed in each first inductor layer can be equal to the number of semiconductor devices formed on the first substrate 11. In other optional embodiments of the present invention, the inductance values ​​connected to each semiconductor device on the first substrate 11 can be different. Therefore, the number of first inductors formed in each first inductor layer does not have to be the same, and the number of first inductors formed in some first inductor layers can be less than the number of semiconductor devices formed on the first substrate 11.

[0037] Figure 6 and Figure 7 A semiconductor device structure according to another embodiment of the present invention is shown, and... Figure 5 The difference in the illustrated embodiment is that, Figure 6 and Figure 7 The semiconductor device structure also includes a third substrate 31, which is bonded to the second substrate 12 via a bonding layer (not shown in the figure). Two second inductor layers 32 are formed between the third substrate 31 and the second substrate 12. Those skilled in the art will understand that more or fewer second inductor layers are feasible. Similarly, at least one second inductor is formed in each second inductor layer 32, and the second inductor can be electrically connected to the first inductor or to the semiconductor device on the first substrate 11. For example, the second inductor can be electrically connected to the semiconductor device through a connection structure.

[0038] Specifically, a cavity is formed between the third substrate 31 and the second substrate 12, and the second inductor layer 32 is formed within this cavity. In an optional embodiment, such as Figure 6 As shown, a recess is formed on the side of the third substrate 31 facing the second substrate 12, thereby forming the cavity, and the second inductor layer 32 is formed in the recess or on the third substrate 31. In another alternative embodiment, such as Figure 7 As shown, a recess is formed on the side of the second substrate 12 facing the third substrate 31, thereby forming the cavity. The second inductor layer 32 is formed in the recess or on the second substrate 12. In other alternative embodiments, the height of the cavity formed between the third substrate 31 and the second substrate 12 is the height of the bonding layer. One end of the second inductor of the second inductor layer 32 is electrically connected to a conductive via 17 in the second substrate 12, and the other end is electrically connected to a conductive via 33 in the third substrate 31, thereby connecting to the outside. Figure 6 and Figure 7 In the example, it is electrically connected to printed circuit board 18. It should be noted that in... Figure 6 and Figure 7In the example, the second inductor of the second inductor layer 32 is electrically connected to the first inductor of the first inductor layer. However, the present invention is not limited to this. The second inductor of the second inductor layer 32 can also be electrically connected to the semiconductor device on the first substrate 11 through a conductive via. For example, the second inductor layer 32 is electrically connected to the conductive post 16 through a conductive via 17.

[0039] The semiconductor device structure of this embodiment provides more inductors by providing a third substrate and forming at least one second inductor layer between the third substrate and the second substrate, or by providing a larger inductance value through series connection between inductors.

[0040] Similarly, in an optional embodiment of the present invention, metal elements may be doped into the third substrate 31 to shield the inductor and semiconductor device from interference from external signals.

[0041] Similarly, in an optional embodiment of the present invention, the second inductor in the second inductor layer 32 is a spiral conductive coil, and the shape of the second inductor is not limited to... Figure 4 As shown, the second inductor can also be a spiral conductive coil composed of arc-shaped lines, or a spiral conductive coil composed of other regular or irregular shaped lines. The inductance value of the second inductor can be adjusted by changing the width, length, thickness, number of turns, and material of the conductive coil. When the second inductor layer 32 is multi-layered, the inductance value can be increased by connecting the second inductors in each second inductor layer in series.

[0042] Figure 8 A semiconductor device structure according to another embodiment of the present invention is shown, and... Figure 6 and Figure 7 The difference in the illustrated embodiment is that, Figure 8 The semiconductor device structure includes two third substrates 31A and 31B. The third substrate 31A, closer to the second substrate 12, is bonded to the second substrate 12. Adjacent third substrates 31A and 31B are bonded together. At least one second inductor layer 32A and 32B are formed between the third substrate 31A and the second substrate 12, and between adjacent third substrates 31A and 31B. At least one second inductor is formed in each second inductor layer 32A, and at least one second inductor is also formed in each second inductor layer 32B. The second inductor between the third substrate 31A and the second substrate 12, closer to the second substrate 12, is electrically connected to a first inductor. Figure 8In the example, the second inductor layer 32B is electrically connected to the second inductor layer 32A. However, the present invention is not limited thereto. The second inductor layer 32B may be electrically connected to the first inductor layers 15A to 15C, or electrically connected to the semiconductor device on the first substrate 11. Similarly, the second inductor layer 32A may also be directly electrically connected to the semiconductor device on the first substrate 11.

[0043] Similar to Figure 6 and Figure 7 In the illustrated embodiment, a cavity is formed between the third substrate 31A and the second substrate 12, and a second inductor layer 32A is formed within this cavity; a cavity is also formed between the third substrate 31B and the third substrate 31A, and a second inductor layer 32B is formed within this cavity. The cavity can be formed by creating recesses in the third substrates 31A and 31B, or it can be formed solely by bonding layers between the third substrate 31A and the second substrate 12, and between the third substrate 31B and the third substrate 31A. At least one conductive via 33A is formed in the third substrate 31A, and at least one conductive via 33B is formed in the third substrate 31B. The two ends of the second inductor between the third substrates 31A and 31B are electrically connected to the conductive vias 33A and 33B in the third substrates 31A and 31B, respectively. One end of the second inductor between the third substrate 31A and the second substrate 12, closer to the second substrate 12, is electrically connected to a conductive via 17 in the second substrate 12, and the other end is electrically connected to a conductive via 33A in the third substrate 31A, closer to the second substrate 12. One end of the conductive via 33B in the third substrate 31B, farther from the second substrate 12, is electrically connected to an inner second inductor, and the other end is electrically connected to an external inductor. Figure 8 In the example, it is electrically connected to printed circuit board 18.

[0044] The semiconductor device structure of this embodiment provides more inductors by setting two third substrates and forming at least one second inductor layer between the third substrate and the second substrate and adjacent third substrates, or by providing a larger inductance value through series connection between inductors.

[0045] Furthermore, the semiconductor device structure of the present invention may further include more third substrates, wherein the third substrate closest to the second substrate is bonded to the second substrate, and each adjacent third substrate is bonded to each other. At least one second inductor layer is formed between each adjacent third substrate and between the third substrate closest to the second substrate and the second substrate. At least one second inductor is formed in each second inductor layer, and the second inductor between the third substrate closest to the second substrate and the second substrate is electrically connected to the first inductor.

[0046] More specifically, each third substrate has at least one conductive via formed therein. The two ends of the second inductor between adjacent third substrates are electrically connected to the conductive vias in the adjacent third substrates, respectively. One end of the second inductor between the third substrate closest to the second substrate is electrically connected to the conductive via in the second substrate, and the other end is electrically connected to the conductive via in the third substrate closest to the second substrate. One end of the conductive via in the third substrate furthest from the second substrate is electrically connected to the second inductor on the inside, and the other end is electrically connected to the outside, and further, to the printed circuit board.

[0047] Furthermore, embodiments of the present invention also provide a filter, which can employ the semiconductor device structure described in the embodiments of the present invention above.

[0048] For specific details regarding the semiconductor device structure in the filter of this invention, please refer to the relevant documentation. Figures 3 to 8 The relevant descriptions and effects in the illustrated embodiments are for understanding purposes only and will not be repeated here.

[0049] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. A semiconductor device structure, characterized in that, include: A first substrate, on which at least one resonator is formed; A second substrate is bonded to the first substrate, a first cavity is formed between the first substrate and the second substrate, at least one first inductor layer is formed on the side of the second substrate facing the first substrate, at least one first inductor is formed in each first inductor layer, and the first inductor is formed in the cavity or on the second substrate, and the resonator is electrically connected to the first inductor. At least one third substrate, a second cavity is formed between the third substrate and the second substrate, the third substrate closest to the second substrate is bonded to the second substrate, and each adjacent third substrate is bonded to each other, at least one second inductor layer is formed between each adjacent third substrate and between the third substrate closest to the second substrate and the second substrate, at least one second inductor is formed in each second inductor layer, and the second inductor between the third substrate closest to the second substrate and the second substrate is electrically connected to the first inductor or the resonator, and the second inductor layer is formed in the second cavity; Both the second substrate and at least one of the third substrates are doped with metal elements.

2. The semiconductor device structure according to claim 1, characterized in that, A recess is formed on the side of the first substrate facing the second substrate, and the resonator is formed within the recess or on the first substrate; and / or The second substrate has a recessed portion formed on the side facing the first substrate, and the first inductor layer is formed within the recessed portion or on the second substrate; and / or The bonding layer between the first substrate and the second substrate forms the cavity between the first substrate and the second substrate.

3. The semiconductor device structure according to claim 1, characterized in that, At least one conductive via is formed in the second substrate. One end of the conductive via is electrically connected to the first inductor, and the other end of the conductive via is electrically connected to the outside.

4. The semiconductor device structure according to claim 1, characterized in that, The first inductor is a spiral conductive coil.

5. The semiconductor device structure according to claim 1, characterized in that, Each of the third substrates has at least one conductive via formed therein, and the two ends of the second inductor between adjacent third substrates are electrically connected to the conductive via in the adjacent third substrate; or One end of the second inductor, located between the third substrate closest to the second substrate and the second substrate, is electrically connected to a conductive via in the second substrate, and the other end is electrically connected to a conductive via in the third substrate closest to the second substrate; or One end of the conductive via in the third substrate furthest from the second substrate is electrically connected to the second inductor inside, and the other end is electrically connected to the outside.

6. The semiconductor device structure according to claim 1, characterized in that, The second inductor is a spiral conductive coil.

7. The semiconductor device structure according to claim 3 or 5, characterized in that, The exterior is a printed circuit board.

8. A filter, characterized in that, Including claim 1 The semiconductor device structure described in any one of the 7.

Images