Semiconductor manufacturing apparatus, method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus, and semiconductor device.

Abstract

The molding die (51) includes: a resin injection gate (59) for injecting a flowing resin that becomes a molding resin toward a cavity (52), a resin accumulation portion (63) for accumulating the flowing resin flowing in the cavity (52), and a resin accumulation gate (65). The resin accumulation portion (63) is provided on the side opposite to the side where the resin injection gate (59) is provided across the cavity (52). The resin accumulation gate (65) connects the cavity (52) and the resin accumulation portion (63). The opening cross-sectional area of ​​the resin accumulation gate (65) is smaller than the opening cross-sectional area of ​​the resin injection gate (59).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus, and a semiconductor device. Background Art

[0002] Power semiconductor devices are becoming more common in all products, from industrial equipment to home appliances and information terminals. Modules installed in home appliances are particularly required to be miniaturized. Power semiconductor devices generate a lot of heat because they handle high voltage and high current. In order to pass a fixed capacity of current, it is necessary to effectively dissipate heat to the outside and maintain electrical insulation from the outside.

[0003] In a power semiconductor device, a lead frame including a die pad on which a power semiconductor element is mounted is sealed together with the power semiconductor element by a sealing material. When sealing with a sealing material, a transfer molding method is applied. In the transfer molding method, the lead frame is arranged in a molding die, and a sealing material is injected into the molding die to seal the power semiconductor element.

[0004] In a power semiconductor device, it is necessary to efficiently dissipate heat generated by a power semiconductor element to the outside. Therefore, a die pad on which a power semiconductor element is mounted is configured such that the thickness of the sealing material covering the side opposite to the side on which the power semiconductor element is mounted is thinner than the thickness of the sealing material covering the side on which the power semiconductor element is mounted.

[0005] When the lead frame is arranged in the molding die, the distance (height) of the lower area from the side of the chip pad opposite to the side on which the power semiconductor element is mounted to the lower mold (bottom surface of the cavity) is shorter than the distance (height) of the upper area from the side of the chip pad on which the power semiconductor element is mounted to the upper mold (upper surface of the cavity).

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 5-326594 Summary of the invention

[0009] Problems to be solved by the invention

[0010] When the sealing material is injected into the molding die, bubbles are more likely to be drawn into the lower region where the height distance is relatively short than in the upper region where the height distance is relatively long, and sometimes voids remain in the sealing material. When the voids remain, the electrical insulation of the sealing material is reduced, and the reliability of the power semiconductor device may be reduced. Countermeasures have been taken for this (for example, Patent Document 1).

[0011] The present disclosure is completed in view of such a situation, and one purpose is to provide a semiconductor manufacturing device that suppresses residual voids in the sealing material, another purpose is to provide a manufacturing method of a semiconductor device using such a semiconductor manufacturing device, and still another purpose is to provide a semiconductor device manufactured by such a manufacturing method.

[0012] Technical solutions to solve problems

[0013] In the semiconductor manufacturing device disclosed in the present invention, a cavity extending in a first direction is formed by using a molding die including a lower mold and an upper mold, a lead frame carrying a semiconductor element is arranged in the cavity, and a sealing material is injected into the cavity, thereby sealing the lead frame together with the semiconductor element. The semiconductor manufacturing device includes a sealing material injection gate, one or more sealing material storage parts, and a sealing material storage gate. The sealing material injection gate injects the sealing material toward the cavity. One or more sealing material storage parts are arranged on the other side of the cavity separated from the side where the sealing material injection gate is arranged in the first direction, and accumulate the sealing material flowing in through the cavity. The sealing material storage gate connects the cavity with the sealing material storage part. The sealing material injection gate has a first opening cross-sectional area. The sealing material storage gate has a second opening cross-sectional area. The second opening cross-sectional area is smaller than the first opening cross-sectional area.

[0014] The manufacturing method of the semiconductor device disclosed in the present invention comprises the following steps. A lead frame is prepared. A semiconductor element is mounted on the lead frame. A molding die is prepared which includes a lower mold and an upper mold and a cavity is formed by the lower mold and the upper mold. The lead frame mounted with the semiconductor element is arranged in the molding die. A sealing material is injected into the cavity. The molding die is disassembled. The step of preparing the molding die comprises the step of preparing the following molding die, wherein the molding die comprises a sealing material injection gate, one or more sealing material storage portions, and a sealing material storage gate portion. The sealing material injection gate portion injects the sealing material toward the cavity. The one or more sealing material storage portions are arranged on the second side opposite to the first side where the sealing material injection gate portion is arranged across the cavity, and accumulate the sealing material flowing in through the cavity. The sealing material storage gate portion connects the cavity with the sealing material storage portion. The step of injecting the sealing material into the cavity comprises the step of injecting the sealing material until the sealing material filled in the cavity flows into the sealing material storage portion.

[0015] The semiconductor device disclosed in the present invention comprises a lead terminal, a chip pad, a semiconductor element and a sealing material. The chip pad is connected to the lead terminal. The semiconductor element is mounted on the chip pad. The sealing material seals the chip pad and the semiconductor element in a manner that a portion of the lead terminal is exposed. The sealing material has a first side portion and a second side portion that are spaced apart in a first direction and face each other. A first sealing material trace is provided on the first side portion. There are one or more second sealing material traces on the second side portion.

[0016] Effects of the Invention

[0017] According to the semiconductor manufacturing apparatus of the present disclosure, the molding die includes a sealing material injection gate, one or more sealing material reservoirs, and a sealing material reservoir gate, thereby preventing voids from remaining in the sealing material injected into the cavity.

[0018] According to the method for manufacturing a semiconductor device of the present disclosure, by using a molding die including a sealing material injection gate, one or more sealing material reservoirs, and a sealing material reservoir gate, it is possible to suppress voids from remaining in the sealing material.

[0019] According to the semiconductor device of the present disclosure, by using a semiconductor manufacturing apparatus including the molding die, it is possible to suppress voids remaining in the sealing material and improve electrical insulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a first plan view showing an example of the appearance of the semiconductor device according to the first embodiment.

[0021] Figure 2 In this embodiment, Figure 1 FIG. 1 is a top view of the internal structure of the semiconductor device shown.

[0022] Figure 3 In this embodiment, Figure 1 A cross-sectional view taken along section line III-III is shown.

[0023] Figure 4 1 is a cross-sectional view showing a semiconductor device according to a first modified example of the embodiment.

[0024] Figure 5 : is a cross-sectional view showing a semiconductor device according to a second modification example of the embodiment.

[0025] Figure 6 This is a second plan view showing the appearance of the semiconductor device in this embodiment.

[0026] Figure 7 1 is a cross-sectional view showing a molding die including a lower die and an upper die in this embodiment.

[0027] Figure 8 1 is a plan view showing the structure of the lower mold in this embodiment.

[0028] Fig. 9 It is a partially enlarged cross-sectional perspective view showing a resin injection gate portion in the molding die in this embodiment.

[0029] Fig.10 1 is a first partially enlarged cross-sectional perspective view showing a resin reservoir gate portion in the molding die in this embodiment.

[0030] Fig.11 1 is a second partially enlarged sectional perspective view showing the resin reservoir gate portion in the molding die in this embodiment.

[0031] Fig.12 1 is a partially enlarged cross-sectional view showing a resin reservoir gate portion in the molding die in this embodiment.

[0032] Fig.13 1 is a partially enlarged plan view showing a resin reservoir gate portion in the molding die in this embodiment.

[0033] Fig.14 It is a partially enlarged cross-sectional view showing a resin reservoir gate portion in a molding die according to a modified example of the embodiment.

[0034] Fig.15 It is a top view showing one step of the method for manufacturing a semiconductor device in this embodiment.

[0035] Fig.16 It is shown that in this embodiment Fig.15 A cross-sectional view of a process performed after the process shown.

[0036] Fig.17 It is shown that in this embodiment Fig.16 A cross-sectional view of a process performed after the process shown.

[0037] Fig.18 It is a top view showing an example of the arrangement structure of the exhaust holes in this embodiment.

[0038] Fig.19 It is shown that in this embodiment Fig.17 A cross-sectional view of a process performed after the process shown.

[0039] Fig. 20 It is shown that in this embodiment Fig.19 A cross-sectional view of a process performed after the process shown.

[0040] Fig.21 In this embodiment Fig. 20A top view of the process shown.

[0041] Fig. 22 It is shown that in this embodiment Fig. 20 and Fig.21 A cross-sectional view of a process performed after the process shown.

[0042] Fig.23 It is shown that in this embodiment Fig. 22 A cross-sectional view of a process performed after the process shown.

[0043] Fig.24 It is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to a comparative example.

[0044] Fig.25 It is a plan view showing one step of a method for manufacturing a semiconductor device according to a modification of the embodiment.

[0045] Fig.26 1 is a plan view showing the structure of a lower mold in a molding die according to a first modified example of the embodiment.

[0046] Fig. 27 It is shown that the embodiment uses Fig.26 A top view of a molding die showing one step of a method for manufacturing a semiconductor device.

[0047] Fig.28 1 is a plan view showing the structure of a lower mold in a molding die according to a second modified example of the embodiment.

[0048] Fig.29 It is shown that the embodiment uses Fig.28 A top view of a molding die showing one step of a method for manufacturing a semiconductor device.

[0049] Fig.30 This is a cross-sectional view showing one step of a method for manufacturing a semiconductor device using the molding die according to the third modification example in this embodiment.

[0050] Fig.31 It is a partially enlarged cross-sectional view showing a resin reservoir gate portion in a molding die according to a fourth modified example of the embodiment.

[0051] Fig.32 It is a partial plan view showing an example of the exhaust hole provided in the molding die in this embodiment.

[0052] Fig.33 In this embodiment, Fig.32 A partial cross-sectional view at section line XXXIII-XXXIII is shown.

[0053] Fig.34 It is a top view showing the structure of the lower mold in the molding die of the second embodiment.

[0054] Fig.35 It is shown that the embodiment uses Fig.34 A top view of a molding die showing one step of a method for manufacturing a semiconductor device.

[0055] Fig.36 It is shown that the embodiment uses Fig.34 The figure is a top view of the appearance of a semiconductor device manufactured by the molding die.

[0056] Fig.37 This is a plan view showing the structure of the lower mold in the molding die of the third embodiment.

[0057] Fig.38 In this embodiment Fig.37 A partial enlarged top view of the lower mold is shown.

[0058] Fig.39 It is shown that the embodiment uses Fig.37 A top view of a molding die showing one step of a method for manufacturing a semiconductor device.

[0059] Fig.40 It is a partially enlarged top view of a lower mold in the molding mold of the first modified example in this embodiment.

[0060] Fig.41 It is a partially enlarged plan view of a lower mold in a molding mold according to a second modified example of the embodiment.

[0061] Fig.42 It is a partially enlarged cross-sectional view of a molding die according to a third modified example of the embodiment.

[0062] Fig.43 It is shown that in this embodiment, Fig.42 A partially enlarged perspective view of a semiconductor device with the molding die removed is shown.

[0063] Fig.44 It is a partially enlarged cross-sectional view of a molding die according to a fourth modified example of the embodiment.

[0064] Fig.45 It is a plan view showing another example of the appearance of the semiconductor device in each embodiment.

[0065] Fig.46 It is a plan view showing still another example of the appearance of the semiconductor device in each embodiment.

[0066] Fig.47It is a partially enlarged cross-sectional view showing a resin reservoir gate portion in the molding die according to the fourth embodiment.

[0067] Fig.48 This is a first side view including a partial cross section showing a state in which a semiconductor device formed by a molding die is mounted on an electronic circuit board in this embodiment.

[0068] Fig.49 This is a second side view including a partial cross section showing a state in which the semiconductor device formed by the molding die is mounted on the electronic circuit board in this embodiment.

[0069] Fig.50 It is a top view showing the structure of the lower mold in the molding die of Embodiment 5.

[0070] Fig.51 It is shown that the embodiment uses Fig.50 A top view of a molding die showing one step of a method for manufacturing a semiconductor device. DETAILED DESCRIPTION

[0071] Implementation method 1.

[0072] A semiconductor device, a semiconductor manufacturing apparatus, and the like according to Embodiment 1 are described.

[0073] (Semiconductor devices)

[0074] First, a semiconductor device manufactured using a semiconductor manufacturing apparatus will be described. Figure 1 , Figure 2 and Figure 3 As shown, in the semiconductor device 1 as a power semiconductor device, a power semiconductor element 21 and an IC element 29 as semiconductor elements are mounted on a lead frame 45. The lead frame 45 is sealed with a mold resin 33 as a sealing material together with the power semiconductor element 21 and the like.

[0075] The molded resin 33 has a first side portion 33a, a second side portion 33b, a third side portion 33c, a fourth side portion 33d, a first main surface 33e, and a second main surface 33f. The first side portion 33a and the second side portion 33b are spaced apart in the X-axis direction and face each other, and extend in the Y-axis direction. The third side portion 33c and the fourth side portion 33d are spaced apart in the Y-axis direction and face each other, and extend in the X-axis direction. The first main surface 33e and the second main surface 33f are spaced apart in the Z-axis direction and face each other.

[0076] A resin mark 34 generated when the flowing resin to be the molding resin 33 is injected into the molding die remains on the surface of the molding resin 33. A resin injection mark 34a as a first sealing material mark is provided on the first side portion 33a. As described later, the resin injection mark 34a is a resin mark remaining at a position corresponding to the resin injection gate portion where the molding resin (flowing resin) is injected.

[0077] The second side portion 33b has a resin pool mark 34b as a second sealing material mark. As described later, the resin pool mark 34b is a resin mark remaining at a position corresponding to the resin pool gate portion. Here, the resin pool mark 34b is located at a position facing the resin injection mark 34a in the X-axis direction in the second side portion. The area of ​​the resin pool mark 34b is smaller than the area of ​​the resin injection mark 34a.

[0078] In addition, Figure 1 , a convex resin mark 34 protruding from the surface of the molded resin 33 is shown. Depending on the method of removing the molded resin 33 from the molding die, the resin mark 34 may be a concave resin mark 34 sunken from the surface of the molded resin 33. In this case, Fig.45 As shown in FIG. 1 , a concave resin injection mark 34a remains on the first side portion 33a. A concave resin accumulation mark 34b remains on the second side portion 33b. Fig.46 As shown, for example, a concave resin injection mark 34a may remain on the first side portion 33a, and a convex resin accumulation mark 34b may remain on the second side portion 33b. In addition, a convex resin injection mark 34a may remain and a concave resin accumulation mark 34b may remain (not shown).

[0079] The lead frame 45 includes a power lead terminal 5, a power lead 3, a lead step portion 7, a large chip pad 9, a small chip pad 15 (15a, 15b, 15c), an IC lead 23, and an IC lead terminal 25. The small chip pad 15 includes three small chip pads 15a, 15b, and 15c. The large chip pad 9 and the like on which the power semiconductor element 21 is mounted are arranged at a position lower than the position (height) of the power lead 3 in the Z-axis direction. The large chip pad 9 and the like are arranged on the first main surface 33e side of the molded resin 33 relative to the position of the power lead 3 in the Z-axis direction.

[0080] The distance from the large chip pad 9 to the first main surface 33e is set to distance L1. The distance from the large chip pad 9 to the second main surface 33f is set to distance L2. Distance L1 is shorter than distance L2. That is, the thickness of the portion of the molding resin 33 covering the side (first surface) opposite to the side on which the power semiconductor element 21 is mounted in the large chip pad 9 is thinner than the thickness of the portion of the molding resin 33 covering the side (second surface) on which the power semiconductor element 21 is mounted in the large chip pad 9. As described later, in order to prevent voids from being generated in the portion of the molding resin 33 covering the first surface of the large chip pad 9, a resin accumulation gate portion and a resin accumulation portion are provided in the molding die.

[0081] For example, three power semiconductor elements 21 are mounted on the large chip pad 9. The three power semiconductor elements 21 are respectively bonded to the large chip pad 9 by the conductive adhesive 19. For example, one power semiconductor element 21 is mounted on each of the small chip pads 15a, 15b, and 15c. One power semiconductor element 21 is bonded to each of the small chip pads 15a, 15b, and 15c by the conductive adhesive (not shown).

[0082] The power semiconductor element 21 is, for example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), etc. As the conductive adhesive 19 , for example, solder or silver paste is used.

[0083] The large die pad 9 is connected to the power lead 3 via the lead step portion 7. The small die pads 15a, 15b, and 15c each have a bent portion 13. The bent portion 13 has an X-direction component and a Y-direction component and extends obliquely.

[0084] The value of the X coordinate of the top end 17a of the chiplet pad 15a is preferably greater than the value of the X coordinate of the terminal portion 11a of the lead step portion 7. The value of the X coordinate of the top end 17b of the chiplet pad 15b is preferably greater than the value of the X coordinate of the terminal portion 11b of the lead step portion 7. The value of the X coordinate of the top end 17c of the chiplet pad 15c is preferably greater than the value of the X coordinate of the terminal portion 11c of the lead step portion 7.

[0085] By providing the bent portion 13, even when the space on the side (the negative direction of the X-axis) of the large chip pad 9 is relatively narrow, three power semiconductor elements 21 can be mounted on the large chip pad 9, and one power semiconductor element 21 can be mounted on each of the three small chip pads 15a, 15b, and 15c. Thus, the power semiconductor elements 21 can be efficiently arranged within the limited volume of the semiconductor device 1, which can contribute to the miniaturization of the semiconductor device 1.

[0086] The chiplet pads 15a, 15b, 15c are connected to the power lead 3 via the bent portion 13 and the lead step portion 7 of the chiplet pad 15, respectively. The power lead 3 is connected to the power lead terminal 5. The power lead terminal 5 protrudes outward from the third side portion 33c of the mold resin 33.

[0087] For example, two IC elements 29 are mounted on the IC lead 23. The two IC elements 29 are bonded to the IC lead 23 by conductive adhesive 27. The IC lead 23 is connected to an IC lead terminal 25. The IC lead terminal 25 protrudes outward from the fourth side portion 33d of the mold resin 33.

[0088] The corresponding power semiconductor element 21 and IC element 29 are electrically connected by wires 31. The corresponding power semiconductor element 21 and power lead 3 are electrically connected by wires 31. The corresponding IC element 29 and IC lead 23 are electrically connected by wires 31.

[0089] The wire 31 is formed of a metal such as gold, silver, copper or aluminum. In this way, a circuit is formed on the lead frame 45. In addition, the material or thickness of the wire 31 may be appropriately changed according to the connected part. In addition, the part connected to the wire 31 may be subjected to a coating or the like for improving the bonding strength of the wire 31.

[0090] In the above-mentioned semiconductor device 1, the structure in which the power lead terminal 5 and the IC lead terminal 25 protrude from the mold resin 33 is cited as an example. Figure 4 As shown, the semiconductor device 1 may be configured such that the power lead terminal 5 and the IC lead terminal 25 are exposed on the surface of the mold resin 33 without protruding from the mold resin 33. In this case, in order to connect the wire 31, the lead step portion 7 connected to the large chip pad 9 is preferably provided with two steps, namely, the lead step portion 7a and the lead step portion 7b.

[0091] In addition, if Figure 5As shown, in the case of the semiconductor device 1 in which a relatively low voltage is applied to the power lead terminal 5, the height direction position of the power lead terminal 5 may be the same position as the height direction position of the large chip pad 9. The voltage applied to the power lead terminal 5 is relatively low, for example, 24 V. In this case, the process of forming the lead step portion 7 on the lead frame is not required, which can contribute to the reduction of production costs.

[0092] As described later, a plurality of cavities for injecting molding resin are formed in the molding die. For example, there is a molding die having a first cavity and a second cavity as cavities. The first cavity and the second cavity are connected by a runner. The molding resin injected into the first cavity is injected into the second cavity via the runner. A portion of the molding resin injected into the second cavity flows into the resin accumulation portion via the resin accumulation gate portion.

[0093] On the surface of the semiconductor device sealed by the molding resin injected into the first cavity, resin traces caused by the resin injection gate and the runner remain. Figure 6 As shown, a resin injection mark 34a remains as a resin mark 34 caused by the resin injection gate. A runner mark 34c remains as a resin mark 34 caused by the runner. The area of ​​the resin injection mark 34a and the area of ​​the runner mark 34c are substantially the same.

[0094] On the surface of the semiconductor device sealed by the molding resin injected into the second cavity, resin traces caused by the runner and resin traces caused by the resin accumulation gate remain. Figure 1 As shown, a resin injection mark 34a remains as a resin mark 34 caused by a runner mark, and a resin pool mark 34b remains as a resin mark 34 caused by a resin pool gate portion.

[0095] In addition, since the molding resin is injected into the second cavity from the runner, the runner mark 34c can also be understood as the resin injection mark 34a. The area of ​​the resin accumulation mark 34b is smaller than the area of ​​the runner mark 34c (resin injection mark 34a). Next, a molding die as a semiconductor manufacturing device is described.

[0096] (Molding Die)

[0097] like Figure 7 and Figure 8 As shown, the molding die 51 has a lower die 53 and an upper die 55. A cavity 52 is formed in the molding die 51. The cavity 52 extends in the X-axis direction as a first direction. The cavity 52 includes, for example, a first cavity 52a and a second cavity 52b. Figure 7 and Fig. 9As shown, a resin injection gate 59 for injecting a molding resin into the first cavity 52a is formed in the molding die 51. A runner 61 for connecting the first cavity 52a and the second cavity 52b is formed in the molding die 51. The molding resin injected into the first cavity 52a is injected into the second cavity 52b via the runner 61.

[0098] like Figure 7 and Fig.10 As shown, a resin reservoir 63 is formed in the molding die 51, into which a part of the flowing resin that becomes the molding resin injected into the second cavity 52b flows. A resin reservoir gate 65 is formed in the molding die 51, which connects the second cavity 52b with the resin reservoir 63. Figure 8 As shown in FIGS. 1 and 10 , the resin reservoir 63 and the resin reservoir gate 65 are formed in the lower mold 53 , for example.

[0099] The resin reservoir 63 is arranged on the other side of the cavity 52 and is spaced apart in the X-axis direction from the side where the resin injection gate 59 is arranged. The resin reservoir gate 65 includes an inclined portion 67 and a movable pin 69 as a shielding portion. The movable pin 69 is movable in the vertical direction (Z-axis direction).

[0100] like Fig. 9 and Fig.10 As shown, the opening cross-sectional area (e.g., width LY2×height LZ2) of the second opening cross-sectional area of ​​the portion where the inclined portion 67 in the resin accumulation gate portion 65 is located is set to be smaller than the opening cross-sectional area (e.g., width LY1×height LZ1) of the first opening cross-sectional area of ​​the resin injection gate portion 59.

[0101] When the movable pin 69 is accommodated in the lower mold 53, the tip portion of the movable pin 69 is located at the same position as the surface of the lower mold 53. The movable pin 69 is movable in a manner protruding in the height direction (Z-axis direction) from the state of being accommodated in the lower mold 53. It is required to suppress the wear of the movable pin 69 due to the movement in the Z-axis direction. In addition, the movable pin 69 is required to function as a shielding portion that prevents the flow of the molding resin. Therefore, the tip portion of the movable pin 69 is preferably separated from the frame 37 (lower surface) by, for example, about 50 μm in the protruding state.

[0102] In addition, Fig.10 , a molding die 51 is shown in which a gap corresponding to the thickness of the frame 37 is formed between the lower die 53 (upper surface 53a) and the upper die (lower surface 55a) in a state where the frame 37 in the lead frame is sandwiched by the lower die 53 and the upper die 55. The molding die 51 is not limited to such a method. Fig.11As shown, for example, the molding die 51 may have a form in which the lower die 53 (upper surface 53 a ) and the upper die 55 (lower surface 55 a ) abut against each other.

[0103] The structure of the resin storage gate 65 and the like will be described in a little more detail. Fig.10 and Fig.12 As shown, the inclined portion 67 is inclined so as to descend from the top 67a toward the resin reservoir 63. The opening cross-sectional area (for example, LY3×LZ3) as the third opening cross-sectional area of ​​the resin reservoir gate portion 65 immediately before the resin flows into the resin reservoir 63 is set to be larger than the opening cross-sectional area (for example, LY2×LZ2) of the portion of the resin reservoir gate portion 65 where the inclined portion 67 is located. As described later, by providing the inclined portion 67, it is easy to release the solidified molding resin from the lower mold 53.

[0104] The portion 66a having the second opening cross-sectional area (LY2×LZ2) corresponds to the first portion of the sealing material reservoir gate, and the portion 66b having the third opening cross-sectional area (LY3×LZ3) corresponds to the second portion of the sealing material reservoir gate.

[0105] In the process of sealing with molding resin, it is necessary to prevent the molding resin (flowing resin) that is about to flow into the resin reservoir 63 from remaining in the resin reservoir 63. In addition, in order to suppress the wear or damage of the movable pin 69, it is necessary to shorten the distance that the movable pin 69 slides relative to the lower mold 53. Specifically, the height LZ2 of the portion where the inclined portion 67 is located (see Fig.10 ) is preferably about 300 to 500 μm. The height LZ3 of the portion of the resin reservoir gate 65 immediately before the molding resin flows into the resin reservoir 63 (see Fig.10 ) preferably has a height of about twice the height LZ2, for example, preferably about 600 to 1000 μm.

[0106] The movable pin 69 is required to reduce the sliding friction with the lower mold 53 when it is movable in the up-down direction. Fig.13 As shown, the cross-sectional shape (XY plane) of the movable pin 69 is preferably circular or elliptical, for example. The diameter D of the movable pin 69 is preferably smaller than the width W of the resin reservoir gate portion 65 in the Y direction by, for example, about 30 μm, so that the flow of the molding resin is minimized when the movable pin 69 protrudes to a height just before contacting the frame.

[0107] The distance L18 from the top 67a of the inclined portion 67 to the center of the movable pin 69 in the resin storage gate portion 65 is preferably as short as possible within a distance in which the movable pin 69 does not overlap the inclined portion 67. Compared with the top valve described in Patent Document 1, the movable pin 69 has a smaller diameter and a circular cross-sectional shape, so that the sliding friction can be reduced and the movable pin 69 is not easily damaged.

[0108] The narrower the width LY3 (Y direction) of the resin storage gate 65 is, the better. It is preferably the same as the width LY1 (see Fig. 9 ) and less than half of the width of the runner 61. In order to release the molding resin flowing into the resin reservoir 63 from the lower mold 53, the width LY3 of the resin injection gate 59 needs to ensure a certain cross-sectional area, for example, preferably about 0.5 to 1.5 mm. On the other hand, the width W of the resin reservoir gate 65 is preferably 500 μm or more so that the molding resin flowing into the resin reservoir 63 does not remain in the lower mold 53.

[0109] Compared with the structure of the comparative example in which the width corresponding to the resin reservoir gate portion is the same as the width of the semiconductor device, the inflow of the molding resin into the resin reservoir portion 63 can be suppressed, the molding resin flowing into the resin reservoir portion 63 can be suppressed to a minimum, and the molding resin can be reliably filled into the cavity 52. ​​It should be noted that the volume of the resin reservoir portion 63 is adjusted by the length L11 (X-axis direction), the length L10 (Y-axis direction), and the length L12 (Z-axis direction).

[0110] In the above-mentioned molding die 51, the case where the resin reservoir gate portion 65 and the resin reservoir portion 63 are formed in the lower die 53 has been described. Fig.14 As shown, as the molding die 51, the resin reservoir gate 65 and the resin reservoir 63 may be formed in the upper die 55. In this case, the movable pin 69 protrudes from the state accommodated in the upper die 55 to a position immediately before contacting the frame.

[0111] (Method for manufacturing semiconductor device)

[0112] Next, a method for manufacturing a semiconductor device using the above-mentioned molding die is described. First, a lead frame 45 is formed by etching a metal plate or punching a metal plate (see Fig.15 ). The large chip pad 9, the small chip pad 15, the IC lead 23, etc. are formed on the lead frame 45. Next, the lead frame 50 is bent using a bending die to form the lead step 7 (see Fig.15 ).

[0113] A power semiconductor element 21 is bonded to each of the large die pad 9 and the small die pad 15 by a conductive adhesive (see Fig.15 ). In addition, an IC element 29 is bonded to the IC lead 23 by a conductive adhesive (see Fig.15 ). Next, connect the wire 31. In this way, Fig.15 As shown, a plurality of semiconductor devices including a lead frame 45 mounted with a power semiconductor element 21 etc. are formed before being sealed by a molding resin. One semiconductor device (a portion of the lead frame 45 facing the left) and another semiconductor device (a portion of the lead frame 45 facing the right) arranged in the X-axis direction are connected by a tie bar 35.

[0114] Next, the semiconductor device is sealed with a molding resin by transfer molding. Fig.16 As shown in FIG. 1 , a molding die 51 including a lower die 53 and an upper die 55 is prepared. A lead frame 45 (see FIG. 1 ) on which a power semiconductor element 21 and the like are mounted is arranged between the lower die 53 and the upper die 55. Fig.15 ). It is preferable that the resin injection gate portion 59 is located on a side closer to the large die pad 9 than the small die pad 15 in the lead frame 45 .

[0115] The area of ​​the large chip pad 9 is larger than that of the small chip pad 15. Therefore, it is sometimes difficult to fill the area between the large chip pad 9 and the lower mold 53 (the bottom surface of the cavity 52) with the molding resin. Therefore, by arranging the resin injection gate 59 near the large chip pad 9, the area between the large chip pad 9 and the lower mold 53 (the bottom surface of the cavity 52) can be reliably filled with the flowing resin of the molding resin in a low viscosity state.

[0116] In order to efficiently fill the region with molding resin (flowing resin), it is preferred that the position (Y-axis direction) of the resin injection gate 59 and the position (Y-axis direction) of the runner 61 are close to the center position (Y-axis direction) of the large chip pad 9. The position (Y-axis direction) of the resin injection gate 59 and the position (Y-axis direction) of the runner 61 are at substantially the same position.

[0117] The resin reservoir 63 is connected to the second cavity 52b via the resin reservoir gate 65. At this time, the movable pin 69 is located upward, and the resin reservoir gate 65 is in a closed state.

[0118] Next, the tablet resin 81 is loaded into the plunger 57. After the lower mold 53 and the upper mold 55 are molded together, the tablet resin 81 is melted while the plunger 57 is raised, so that the molten flowing resin that becomes the molding resin is injected into the cavity 52 (52a) from the resin injection gate 59. The injected flowing resin is filled in the first cavity 52a and then reaches the runner 61.

[0119] like Fig.17 As shown, the flowing resin reaching the runner 61 flows in the runner 61 and is injected into the second cavity 52b. The distance from the large chip pad 9 and the small chip pad 15 to the upper mold 55 (the upper surface of the second cavity 52b) is longer than the distance from the large chip pad 9 and the small chip pad 15 to the lower mold 53 (the bottom surface of the second cavity 52b).

[0120] Therefore, the flowing resin 83 is more likely to flow to the region RC1 of the cavity 52 above the large chip pad 9 and the small chip pad 15 than to the region RC2 of the cavity 52 below the large chip pad 9 and the small chip pad 15. Thus, the flowing resin 83 flowing in the region RC1 eventually flows from the region RC1 to the region RC2, and the flowing resin 83 flowing in the region RC2 eventually merges at the position 87 (region 85) below the small chip pad 15 (15C).

[0121] While the fluid resin 83 is gradually filled into the cavity 52, the air in the cavity 52 is exhausted from the exhaust hole 79 provided in the cavity 52. Fig.18 As shown, the vent hole 79 is arranged around the cavity 52. ​​The vent hole 79 is formed by a concave portion having a depth of about 100 μm, for example, provided in the upper mold 55 or the lower mold 53. The lower vent hole 79 will be described in detail later.

[0122] like Fig.19 As shown, in the region 85 below the chip pad 15 (15C), when the flowing resin 83 flowing in the region RC1 merges with the flowing resin 83 flowing in the region RC2, air is easily drawn into the flowing resin 83. Before the flowing resin 83 merges in the region 85 (position 87), the movable pin 69 is located at the upper side and the resin storage gate 65 is in a closed state. The drawn-in air may remain as a void in the flowing resin 83 (molding resin) without being crushed.

[0123] Therefore, next, a process (process) is performed to prevent voids from remaining in the fluid resin 83. Fig. 20 and Fig.21 As shown, the movable pin 69 descends to open the resin reservoir gate 65. By opening the resin reservoir gate 65, the flowing resin 83 in the second cavity 52b tends to flow into the resin reservoir 63 through the resin reservoir gate 65. Fig.21 In the figure, in order to show the structure of the lower mold 53, the frame 37 is shown by a two-dot chain line. In the following drawings, the frame 37 is also shown by a two-dot chain line as needed.

[0124] At this time, the portion of the flowing resin 83 in the region 85 located below the chiplet pad 15 (15C) also flows toward the resin reservoir gate 65. Thus, even if there are voids remaining in the portion of the flowing resin 83 located in the region 85, the voids are removed from the region RC2. In this way, the molding resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side in (etc.).

[0125] Next, the process (process) of disassembling the molding die 51 is performed. Fig. 22 As shown, the plunger 57 is pushed upward (see arrow). As a result, the mold resin 33 sealing the power semiconductor element 21 and the like is separated from the lower mold 53. At this time, it is assumed that the mold resin 99 that has flowed into the resin reservoir 63 and solidified will not fall off from the lower mold 53.

[0126] Therefore, the movable pin 69 is also pushed upward (see arrow) together with the plunger 57. By making the movable pin 69 protrude upward, the molding resin 99 can be reliably removed from the lower mold 53. Fig.23 As shown, the molded resin 99 removed from the lower mold 53 is removed from the frame 37 by a mold punch (not shown). In addition, the molded resin portion located at the runner and the molded resin portion located at the resin injection gate portion are separated by the mold punch (not shown). Figure 1~Figure 3 The semiconductor device 1 is sealed by the molding resin 33 as shown in FIG.

[0127] In the semiconductor device 1 described above, the mold resin 33 (see Figure 3 In this regard, the electrical insulation of the first main surface 33e side in the semiconductor device manufacturing method of the comparative example will be described in comparison.

[0128] like Fig.24 As shown, in the manufacturing method of the semiconductor device of the comparative example, a vent hole 79 is arranged in the portion of the molding die 51 that faces the runner 61 across the second cavity 52b. The vent hole 79 is one of the plurality of vent holes arranged around the cavity 52. ​​In addition, the same reference numerals are attached to the same components as the molding die 52 of the embodiment, and the description thereof will not be repeated unless necessary.

[0129] The flowing resin 83 injected into the first cavity 52a from the resin injection gate 59 is injected into the second cavity 52b via the runner 61. In the second cavity 52b, the flowing resin 83 flowing in the region RC1 merges with the flowing resin 83 flowing in the region RC2 in the region 85 (position 87) below the chip pad 15 (15C). At this time, air is easily drawn into the flowing resin 83. A plurality of exhaust holes including the exhaust hole 79 are provided in the molding die 51, and air in the flowing resin 83 is exhausted from the exhaust holes.

[0130] However, in the region 85 where the flowing resin 83 merges, the air involved in the flowing resin 83 is difficult to be discharged. In particular, when the amount of the involved air is large, the involved air may not be discharged from the exhaust hole and may become a void and remain in the flowing resin 83. Therefore, in the completed semiconductor device, it is conceivable that the molding resin 33 (see Figure 3 The electrical insulation on the first main surface 33e side (etc.) deteriorates.

[0131] Compared to the manufacturing method of the semiconductor device of the comparative example, in the manufacturing method of the semiconductor device of the first embodiment, after the flowing resin 83 flowing in the region RC1 and the flowing resin 83 flowing in the region RC2 merge in the region 85 (position 87), the flowing resin 83 tends to flow from the resin reservoir gate 65 into the resin reservoir 63. Thus, even if there are voids remaining in the portion of the flowing resin 83 located in the region 85, the voids are eliminated from the region RC2. As a result, it is possible to ensure that the molding resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side (etc.)

[0132] In the completed semiconductor device, the resin injection gate 59, the runner 61 and the resin storage gate 65 (see Figure 7 As described above, a resin trace 34 having a rougher surface than other parts remains on the surface of the molding resin 33 of the semiconductor device 1 (see Figure 1 and Figure 6 ).

[0133] In particular, the semiconductor device sealed in the second cavity 52b (see Figure 1 ), a runner mark 34c remains on the first side portion 33a, and a resin accumulation mark 34b remains on the second side portion 33b. The cross-sectional area of ​​the runner is the same as the cross-sectional area of ​​the resin injection gate, and the flowing resin is injected from the runner, so the runner mark 34c can be understood as the resin injection mark 34a.

[0134] On the other hand, the semiconductor device sealed in the first cavity 52a (see Figure 6), a resin injection mark 34a remains on the first side portion 33a, and a runner mark 34c remains on the second side portion 33b. The area of ​​the resin injection mark 34a and the area of ​​the resin accumulation mark 34b are substantially the same.

[0135] Furthermore, in the above-mentioned method for manufacturing a semiconductor device, Fig.23 In the process shown in FIG. 1 , the molded resin 99 removed from the lower mold 53 is removed from the frame 37 and the molded resin 33 that becomes the semiconductor device by using the mold punch. In order to efficiently remove the molded resin 99 from the molded resin 33, as shown in FIG. Fig.25 As shown, a cutout portion 39 may be provided in the frame 37 .

[0136] The cutout 39 is formed so as to expose the resin pool 63 when the lead frame 45 is arranged in the molding die 51 (lower die 53). Thus, when the mold resin 99 is removed from the mold resin 33 by the die punch, the mold punch can be directly brought into contact with the mold resin 99 and removed efficiently.

[0137] When the lead frame 45 having the cutout portion 39 is used, the tip of the movable pin 69 preferably projects to a position approximately 50 μm away from the lower surface of the upper mold 55 when the resin reservoir gate 65 is closed.

[0138] In addition, in the above-mentioned method for manufacturing a semiconductor device, the case where the resin reservoir gate portion 65 is arranged at a position closest to the resin injection gate portion 59 is described. Specifically, the molding die 51 is described in which the position (Y-axis direction) of the resin reservoir gate portion 65 and the position (Y-axis direction) of the runner 61 (resin injection gate portion 59) are at the same position. The resin reservoir gate portion 65 may be arranged at a position (Y-axis direction) away from the position (Y-axis direction) of the runner 61 (resin injection gate portion 59).

[0139] like Fig.26 As shown, the resin reservoir gate portion 65 may be disposed, for example, at a position (in the Y-axis direction) away from the position of the runner 61 in the positive direction of the Y-axis (in the Y-axis direction) in the molding die 51 (lower die 53). In this case, the time until the flowing resin 83 injected from the runner 61 reaches the resin reservoir gate portion 65 becomes longer.

[0140] Therefore, in Fig. 27 In the step of injecting the fluid resin 83 into the cavity 52 shown in FIG. Fig.18The part of the flowing resin 83 (such as ) that is formed by the flowing resin 83 has gaps, and the gaps are also eliminated from the area 85 (area RC2) during the period from when the flowing resin 83 reaches the resin reservoir gate 65 and flows into the resin reservoir 63. As a result, the molding resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side in (etc.).

[0141] Furthermore, in order to ensure that the fluid resin 83 is filled in the region 85 (see Fig.18 In order to increase the volume of the resin reservoir 63, as shown in FIG. Fig.28 As shown, for example, it is preferable to maintain the length L11 of the resin reservoir 63 in the X-axis direction and set the length L10 in the Y-axis direction to be longer.

[0142] Therefore, in Fig.29 In the step of injecting the fluid resin 83 into the cavity 52 shown in FIG. Fig.18 The portion of the flowing resin 83 (such as the above) where the flowing resin 83 is located has gaps, and the gaps are reliably removed from the region 85 (region RC2) during the period when the flowing resin 83 flows into the resin reservoir 63. As a result, the molding resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side in (etc.).

[0143] Furthermore, when a plurality of cavities arranged in the Y-axis direction are filled with a flowing resin (molding resin) (not shown), the length of the resin reservoir in the Y-axis direction is preferably set to a length not exceeding the length of the cavities arranged in the Y-axis direction, and the length in the X-axis direction is made longer. It is assumed that such a molding die 51 is used and a lead frame 45 including a frame 37 provided with a cutout portion 39 is applied (see Fig.25 In this case, it is preferred that the length of the resin reservoir 63 in the X-axis direction does not exceed the width of the frame (the length in the X-axis direction).

[0144] On the other hand, it is also possible to assume that the length L11 of the resin reservoir 63 in the X-axis direction exceeds the width of the frame 37. In this case, Fig.30 As shown, it is preferable to provide a mechanism for removing the molded resin 99 from the molded resin 33 by pressing the molded resin 99 that has flowed into the resin reservoir and solidified from above.

[0145] In addition, the length L12 in the depth direction of the resin reservoir 63 (see Fig.12 In order to remove the molded resin 99 that has flowed into the resin reservoir 63 and solidified from the lower mold well, it is preferred that the bottom of the resin reservoir 63 is located at a position (height) above the bottom surface of the cavity 52.

[0146] Moreover, if Fig.31 As shown, for example, a resin reservoir 63 that ensures an area for accumulating flowing resin may also be provided in the upper mold 55 of the molding die 51. In this case, in order to properly remove the molding resin 99 that flows into the resin reservoir 63 and solidifies from the upper mold 55, it is preferred that the upper surface of the resin reservoir 63 is located at a position (height) that does not exceed the upper surface of the cavity 52.

[0147] In such a molding die 51, the volume of the resin reservoir 63 can be sufficiently ensured even in the region 85 (see Fig.18 Even if voids remain in the portion of the flowing resin 83 (such as in the embodiment of the present invention), the voids can be reliably eliminated from the region 85 during the period when the flowing resin 83 is about to flow into the resin reservoir 63.

[0148] In the above-mentioned method for manufacturing a semiconductor device, as described above, since the flowing resin 83 tends to flow from the resin reservoir gate 65 into the resin reservoir 63, even if there are voids remaining in the portion of the flowing resin 83 located in the region 85, the voids are removed from the region RC2. As a result, the molding resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side (etc.)

[0149] Here, the distance L1 (see Figure 3 ) The thickness of the mold resin 33 corresponding to the thickness of the semiconductor device 1 is set to about 500 μm. The thickness of the mold resin 33 in the Z-axis direction is set to about 3.5 mm.

[0150] When manufacturing such a semiconductor device, assuming that voids remain in the portion of the flowing resin 83 located in region 85, in order to exclude the voids from region RC2, the volume of the resin accumulation portion 63 is required to be approximately one third of the volume of the molding resin 33 of the semiconductor device 1.

[0151] In the above-mentioned method for manufacturing a semiconductor device, a resin reservoir gate 65 is provided in the molding die 51. The opening cross-sectional area of ​​the resin reservoir gate 65 is smaller than the opening cross-sectional area of ​​the resin injection gate 59. In addition, the resin reservoir gate 65 is provided with a movable pin 69 for controlling the flow of the flowing resin into the resin reservoir 63.

[0152] Thus, the amount of the flowing resin 83 flowing into the resin reservoir 63 can be minimized, and the voids remaining in the flowing resin 83 can be discharged. As a result, the amount of the discarded molding resin 99 (flowing resin 83) can be minimized, and the electrical insulation of the molding resin 33 can be ensured. In addition, the movable pin 69 may be a member having only the function of reliably removing the molding resin 99 from the lower mold 53.

[0153] In addition, in the above-mentioned method for manufacturing a semiconductor device, the flowing resin 83 injected into the first cavity 52a from the resin injection gate 59 flows in the runner 61 and is injected into the second cavity 52b. In order to make the flow of the flowing resin 83 in the first cavity 52a and the flow of the flowing resin 83 in the second cavity 52b substantially the same, it is preferred that the cross-sectional shape of the resin injection gate 59 and the cross-sectional shape of the runner 61 are the same cross-sectional shape. On the other hand, it is preferred that the cross-sectional shape of the resin storage gate 65 is smaller than the cross-sectional shape of the resin injection gate 59 (runner 61).

[0154] As described above, the area of ​​the resin injection mark 34a and the area of ​​the runner mark 34c remaining on the surface of the semiconductor device 1 sealed in the first cavity 52a become substantially the same (see Figure 6 The area of ​​the resin pool mark 34b remaining on the surface of the semiconductor device 1 sealed in the second cavity 52b is smaller than the area of ​​the runner mark 34c (resin injection mark 34a) (refer to Figure 1 ). In this way, the resin traces 34 including the resin pool traces 34 b remain on the surface of the semiconductor device 1 , and can be easily confirmed from the appearance (molding resin 33 ) of the semiconductor device 1 .

[0155] (Vent holes in molding tool)

[0156] As described above, while the cavity 52 is gradually filled with the fluid resin 83, the air in the cavity 52 is exhausted from the exhaust hole 79 formed in the molding die 51 (see FIG. Fig.18 ).

[0157] exist Fig.32 and Fig.33 , as an example of the vent hole 79, the vent hole 79 located near the resin reservoir 63 in the molding die 51 is shown. The vent hole 79a is provided in the upper die 55. The vent hole 79b is provided in the lower die 53. The vent hole 79b is communicated with the resin reservoir 63.

[0158] In order to effectively exhaust the air in the cavity 52, it is necessary to increase the gap as the vent hole 79. However, for example, when the height LZ4 of the gap as the vent hole 79a provided in the upper mold 55 is increased, the possibility of excessive leakage of the fluid resin becomes high. Therefore, by providing the vent hole 79b in the lower mold 53 so as to face the vent hole 79a in the height direction (Z axis), the height of the gap as the vent hole 79 can be ensured.

[0159] In addition, by providing the resin reservoir 63, the solidification of the fluid resin flowing into the resin reservoir 63 is promoted, and the fluid resin is suppressed from leaking out of the vent hole 79b communicating with the resin reservoir 63. As a result, the height LZ5 of the gap serving as the vent hole 79b can be increased compared to the case where the resin reservoir 63 is not provided. As a result, the air in the cavity 52 can be discharged to the outside of the molding die 51 more efficiently.

[0160] In order to ensure a region (area) for sandwiching the lead frame 45 between the upper mold 55 and the lower mold 53 , it is preferable that the exhaust hole 79 a and the exhaust hole 79 b are arranged at positions facing each other in the height direction.

[0161] The width LY1 of the exhaust hole 79a and the width LY2 of the exhaust hole 79b may be the same width or different widths. In addition, the center position of the width direction (Y-axis direction) of the exhaust hole 79a and the center position of the width direction (Y-axis direction) of the exhaust hole 79b may be the same position or may be staggered.

[0162] Implementation method 2.

[0163] A semiconductor manufacturing apparatus and the like according to Embodiment 2 will be described. Here, a semiconductor manufacturing apparatus and the like to which a molding die having a plurality of resin reservoirs for one cavity is applied will be described.

[0164] (Molding Die)

[0165] The molding die used as a semiconductor manufacturing device is described below. Fig.34 As shown, in the molding die 51 (lower die 53), for example, a resin reservoir 63a and a resin reservoir 63b are formed as the resin reservoir 63. A resin reservoir gate 65a is formed to communicate the second cavity 52b with the resin reservoir 63a. A resin reservoir gate 65b is formed to communicate the second cavity 52b with the resin reservoir 63b.

[0166] The resin storage gate 65a is arranged at a position (in the Y-axis direction) away from the position of the runner 61 in the positive direction of the Y-axis. The resin storage gate 65b is arranged at a position (in the Y-axis direction) away from the position of the runner 61 in the negative direction of the Y-axis. Figure 7 and Figure 8 The structure of the molding die 51 shown is the same, so the same reference numerals are given to the same components, and the description thereof will not be repeated unless necessary.

[0167] (Method for manufacturing semiconductor device)

[0168] Next, a method for manufacturing a semiconductor device using the above-mentioned molding die will be described.

[0169] First, similarly to the above-mentioned method for manufacturing a semiconductor device, a plurality of semiconductor devices including a lead frame on which a power semiconductor element is mounted before being sealed with a molding resin are formed. Next, the semiconductor devices are sealed with a molding resin by a transfer molding method. Fig.35 As shown, the lead frame 45 on which the power semiconductor element 21 and the like are mounted is arranged in a molding die 51 .

[0170] After the lower mold 53 and the upper mold (not shown) are closed, the flowing resin 83 is injected into the cavity 52 (52a) from the resin injection gate 59. The flowing resin 83 injected into the first cavity 52a flows in the runner 61 and is injected into the second cavity 52b, gradually filling the second cavity 52b.

[0171] During this period, as described above, the flowing resin 83 flowing in the region RC1 eventually flows from the region RC1 to the region RC2, and finally merges with the flowing resin 83 flowing in the region RC2 in the region 85 (position 87) below the chip pad 15 (15C) (see Fig.17 and Fig.19 ).

[0172] In region 85 , when flowing resin 83 flowing in region RC1 merges with flowing resin 83 flowing in region RC2 , air is easily drawn into flowing resin 83 , and the drawn air may remain as voids in flowing resin 83 (molding resin) without being crushed.

[0173] Then, with Fig. 20 The steps shown in the figure are similarly performed by opening the resin reservoir gate 65 (65a, 65b). By opening the resin reservoir gate 65 (65a, 65b), the flowing resin 83 in the second cavity 52b tends to flow into the resin reservoir 63a through the resin reservoir gate 65a or tends to flow into the resin reservoir 63b through the resin reservoir gate 65b.

[0174] At this time, the portion of the flowing resin 83 located in the region 85 also flows toward the resin reservoir gate portion 65. Thus, even if voids remain in the portion of the flowing resin 83 located in the region 85, the voids are removed from the region 85.

[0175] Afterwards, with Fig. 22 and Fig.23 In the same manner as shown in the process, the molding die is disassembled to produce a semiconductor device sealed by molding resin. Fig.36 As shown, in the completed semiconductor device 1 , two resin pool marks 34 b remain, particularly on the second side portion 33 b .

[0176] In the above-mentioned method for manufacturing a semiconductor device, the resin reservoir gates 65 (65a, 65b) are respectively arranged at positions (in the Y-axis direction) away from the position (in the Y-axis direction) of the runner 61 in the Y-axis direction (positive or negative). Fig.26 In the case of the molding die 51 shown, the time required for the fluid resin 83 injected from the runner 61 to reach the resin reservoir gate portion 65 becomes longer.

[0177] Thus, even if there are gaps remaining in the portion of the flowing resin 83 located in the region 85, the gaps are eliminated from the region 85 (position 87) while the flowing resin 83 is about to reach the resin reservoir gate portion 65 and flow into the resin reservoir portion. As a result, the first main surface 33e side of the molding resin 33 (see Figure 3 )'s electrical insulation.

[0178] In addition, in the above-mentioned molding die 51, it is possible to sufficiently ensure the volume of the resin reservoir 63. In the manufacture of semiconductor devices, there are sometimes positioning holes in the lead frame relative to the molding die. In such a case, it is conceivable that the length of the resin reservoir in the Y direction is limited and the volume of the resin reservoir cannot be sufficiently ensured.

[0179] In the above-mentioned molding die, by avoiding such a positioning hole (not shown) of the frame and providing two resin reservoirs 65a and 65b, it is possible to ensure a sufficient volume as the resin reservoir 65. By ensuring a sufficient volume of the resin reservoir 65, even in the region 85 (see Fig.19 Even if there are gaps remaining in the structure (such as the structure of the apparatus), the gaps can be reliably eliminated.

[0180] Furthermore, in the above-mentioned molding die 51, the wear of the die punch that removes the portion of the molding resin that has flowed into the resin reservoir 65 and solidified can be suppressed. In the molding die 51, two resin reservoirs 65a and 65b are formed as the resin reservoir 65. Thus, the cross-sectional area of ​​the die punch that removes the portion of the molding resin that has flowed into the resin reservoirs 65a and 65b and solidified can be reduced. Thus, the wear of the die punch can be suppressed compared to a single die punch having a large cross-sectional area, which can contribute to a reduction in production costs.

[0181] Implementation method 3.

[0182] A semiconductor manufacturing apparatus and the like according to the third embodiment will be described.

[0183] (Molding Die)

[0184] like Fig.37As shown, in the molding die 51 (lower die 53) as a semiconductor manufacturing device, for example, a resin reservoir 63a and a resin reservoir 63b are formed as the resin reservoir 63. A resin reservoir gate 65a is formed to communicate the second cavity 52b with the resin reservoir 63a. A resin reservoir gate 65b is formed to communicate the second cavity 52b with the resin reservoir 63b. A movable pin as a shielding portion is not provided in each of the resin reservoir gate 65a and the resin reservoir gate 65b.

[0185] like Fig.38 As shown, a protrusion 93a protruding toward the resin reservoir 63a and a protrusion 93b protruding toward the resin reservoir 63b are formed in the lower mold 53. When the molded resin that has flowed into the resin reservoir 63 and solidified is removed by the mold punch, the frame 37 is supported from below by the portion of the lower mold 53 including the protrusions 93a and 93b.

[0186] In the resin reservoir 63a, the length in the Y-axis direction of the portion of the resin reservoir 63a where the protrusion 93a is arranged in the X-axis direction is set to length L16a. The length in the Y-axis direction of the portion of the resin reservoir 63a where the protrusion 93a is not arranged in the X-axis direction is set to length L15a. It is preferred that the length L16a is shorter than the length L15a.

[0187] In the resin reservoir 63b, the length in the Y-axis direction of the portion of the resin reservoir 63b where the protrusion 93b is arranged in the X-axis direction is set to length L16b. The length in the Y-axis direction of the portion of the resin reservoir 63b where the protrusion 93b is not arranged in the X-axis direction is set to length L15b. It is preferred that the length L16b is shorter than the length L15b.

[0188] Furthermore, the length L15a and the length L15b may be different in length or the same in length, and the length L16a and the length L16b may be different in length or the same in length.

[0189] In the resin reservoir 63a, the length in the X-axis direction of the portion of the resin reservoir 63a where the protrusion 93a is not arranged in the Y-axis direction is set to length L14a. In the resin reservoir 63b, the length in the X-axis direction of the portion of the resin reservoir 63b where the protrusion 93b is not arranged in the Y-axis direction is set to length L14b. The length L14a and the length L14b are preferably set to a length of about half of the width of the frame 37. Thus, when the portion of the molded resin that has flowed into the resin reservoir 63 and solidified is removed by the die punch, an area that presses the frame 37 can be ensured.

[0190] like Fig.37As shown in FIG. 1 , the resin accumulation gate portion 65a is arranged at a position (in the Y-axis direction) away from the position of the runner 61 in the positive direction of the Y-axis. The resin accumulation gate portion 65b is arranged at a position (in the Y-axis direction) away from the position of the runner 61 in the negative direction of the Y-axis. Preferably, the resin accumulation gate portion 65a and the resin accumulation gate portion 65b are arranged as far away from the chip pad 15 (15C) as possible (see FIG. 15C ) where the lead frame is finally filled with the flowing resin when the lead frame is arranged in the molding die 51. Fig.19 The position of area 85 (position 87) below the area 85 (position 87) etc.

[0191] Preferably, the resin reservoir gate 65a is disposed at a position about 0.5 to 2.0 mm away from the portion of the second cavity 52b extending in the X-axis direction (the upper portion of the paper) in the negative direction of the Y-axis. Preferably, the resin reservoir gate 65b is disposed at a position about 0.5 to 2.0 mm away from the portion of the second cavity 52b extending in the X-axis direction (the lower portion of the paper) in the positive direction of the Y-axis. Thus, when the molded resin that has flowed into the resin reservoir 63 and solidified is removed by the die punch, the formation of a chip in the molded resin of the semiconductor device is suppressed.

[0192] The length of the resin accumulation gate 65a in the Y-axis direction is defined as width Wa. The length of the resin accumulation gate 65b in the Y-axis direction is defined as width Wb. The narrower the width Wa and the narrower the width Wb, the better. The width Wa and the width Wb are preferably the width LY1 of the resin injection gate 59 (see Fig. 9 ) and about half of the width of the runner 61. The width Wa and the width Wb are preferably about 0.5 to 1.5 mm, for example, so that the portion of the molding resin that flows into the resin reservoir 63 and solidifies can be easily removed from the lower mold 53.

[0193] The length (height) of each of the resin accumulation gate 65a and the resin accumulation gate 65b in the Z direction is preferably short. The length in the Z direction is preferably about 0.2 to 0.6 mm, for example, so that the portion of the molded resin that has flowed into the resin accumulation gate 63 and solidified can easily fall off from the lower mold 53. The length of each of the resin accumulation gate 65a and the resin accumulation gate 65b in the X-axis direction is set to length L17. Considering the opening cross-sectional area of ​​the resin accumulation gate 65, etc., the length L17 is set to an appropriate length.

[0194] (Method for manufacturing semiconductor device)

[0195] Next, a method for manufacturing a semiconductor device using the above-mentioned molding die is described. First, similarly to the above-mentioned method for manufacturing a semiconductor device, a plurality of semiconductor devices including lead frames on which power semiconductor elements and the like are mounted before being sealed with a molding resin are formed.

[0196] Next, the semiconductor device is sealed with a molding resin by transfer molding. Fig.39 As shown, the lead frame 45 on which the power semiconductor element 21 and the like are mounted is arranged in the molding die 51. Here, the frame 37 of the lead frame 45 is formed with cutouts 41a and 41b. The cutout 41a is formed so as to expose the resin pool 39a. The cutout 41b is formed so as to expose the resin pool 39b.

[0197] Furthermore, in order to suppress the position of IC lead 23 from shifting up and down (in the Z-axis direction) in cavity 52 when injecting the fluidized resin, suspension leads 43 connecting IC lead 23 and frame 37 are arranged on lead frame 45 .

[0198] After the lower mold 53 and the upper mold (not shown) are closed, the flowing resin 83 is injected into the cavity 52 (52a) from the resin injection gate 59. The flowing resin 83 injected into the first cavity 52a flows in the runner 61 and is injected into the second cavity 52b, gradually filling the second cavity 52b.

[0199] During this period, as described above, the flowing resin 83 flowing in the region RC1 eventually flows from the region RC1 to the region RC2, and finally merges with the flowing resin 83 flowing in the region RC2 at the region 85 (position 87) below the chip pad 15 (15C) (see Fig.17 and Fig.19 ).

[0200] In region 85 , when the flowing resin 83 flowing in region RC1 merges with the flowing resin 83 flowing in region RC2 , air is easily drawn into the flowing resin 83 , and the drawn air may remain as voids in the flowing resin 83 (molding resin) without being crushed.

[0201] Next, by injecting the flowing resin 83 from the runner 61 , the flowing resin 83 in the second cavity 52 b tends to flow into the resin reservoir 63 a through the resin reservoir gate 65 a or tends to flow into the resin reservoir 63 b through the resin reservoir gate 65 b .

[0202] At this time, the portion of the flowing resin 83 located in the region 85 also flows toward the resin reservoir gate portion 65. Thus, even if voids remain in the portion of the flowing resin 83 located in the region 85, the voids are removed from the region RC2.

[0203] Afterwards, with Fig. 22 and Fig.23 The molding die is disassembled in the same manner as in the process shown in FIG. 1 to produce a semiconductor device sealed with a molding resin. Fig.36Similarly, in the semiconductor device 1 shown, two resin pool marks 34 b remain on the second side portion 33 b.

[0204] In the above-mentioned method for manufacturing a semiconductor device, the resin reservoir gate 65 (65a, 65b) is respectively arranged at a position (in the Y-axis direction) away from the position (in the Y-axis direction) of the runner 61 in the Y-axis direction (positive or negative). Thus, as described above, even if there is a void remaining in the portion of the flowing resin 83 located in the region 85, the void is eliminated from the region 85 (position 87) while the flowing resin 83 is about to flow from the resin reservoir 65 into the resin reservoir 63. As a result, the first main surface 33e side (see FIG. 1 ) of the molded resin 33 can be reliably secured. Figure 3 )'s electrical insulation.

[0205] In addition, the frame 37 is formed with cutouts 41a and 41b. The cutout 41a is formed so as to expose the resin reservoir 39a. The cutout 41b is formed so as to expose the resin reservoir 39b. Thus, when the mold punch is used to remove the portions of the molded resin that have flowed into the resin reservoirs 63a and 63b and solidified, the mold punch can be efficiently removed by contacting the portions of the molded resin without contacting the frame 37.

[0206] Furthermore, by forming the cutouts 41a and 41b in the frame 37, the capacity of the resin reservoirs 63a and 63b can be increased by an amount corresponding to the volume of the cutouts 41a and 41b (area of ​​the cutouts 41a and 41b in the XY plane×thickness of the frame 37).

[0207] In addition, by forming the cutouts 41a and 41b in the frame 37, the cross-sectional area of ​​the portion connected to the exhaust hole (not shown) becomes larger than when no cutout is formed. As a result, more air can be guided to the exhaust hole, the amount of air taken into the fluid resin can be reduced, and the remaining voids can be suppressed.

[0208] Furthermore, in the above-described method for manufacturing a semiconductor device, when the suspension leads 43 are removed by a die punch (not shown), the protrusions 93a and 93b are formed on the lower die 53, thereby ensuring an area for supporting the frame 37 by the lower die 53. Thus, the suspension leads 43 can be reliably removed.

[0209] In the above-mentioned semiconductor manufacturing apparatus, the case where the protrusion 93a and the protrusion 93b are formed on the molding die 51 (lower die 53) has been described. Fig.40As shown, the molding die 51 may be a molding die 51 without the protrusion 93a and the protrusion 93b. In this case, it is preferable to remove the portions of the molding resin that have flowed into the resin reservoirs 63a and 63b and solidified and the suspension leads 43 at the same time using a die punch (not shown).

[0210] In addition, in the above-mentioned semiconductor manufacturing apparatus, the case where the resin reservoir gate portion 65 (65a, 65b) extends in the X-axis direction has been described. Fig.41 As shown in FIG. 5 , as the molding die 51 , the direction in which the resin reservoir gate portion 65 ( 65 a , 65 b ) extends may be inclined in a direction intersecting the X-axis direction.

[0211] The resin reservoir gate 65a may be inclined at an angle AL1 in the Y-axis direction (negative direction) relative to the X-axis direction, for example. The resin reservoir gate 65b may be inclined at an angle AL2 in the Y-axis direction (positive direction) relative to the X-axis direction, for example.

[0212] By using such a molding die 51, the flow resistance of the flowing resin when flowing in the resin reservoir gates 65a and 65b becomes high, and the amount of flowing resin flowing into the resin reservoirs 63a and 63b can be suppressed, and the remaining voids can be suppressed.

[0213] In addition, if Fig.42 As shown, a step portion 97 may be provided on the resin reservoir gate portion 65 side of the resin reservoir portion 63 together with the inclined portion 67. By providing such a step portion 97, as shown in FIG. Fig.43 As shown in the dashed line frame S, the gap between the mold resin 33 and the mold resin 99 that has flowed into the resin reservoir 63 and solidified can be enlarged. Thus, the solidified mold resin 99 can be easily removed from the mold resin 33 using a die punch (not shown).

[0214] In addition, if Fig.44 As shown, as the molding die 51, from the viewpoint of ensuring the volume of the resin reservoir 63 as much as possible, it is not necessarily necessary to provide a step portion. Fig.42 and Fig.44 In each of the drawings, the inclined portion 64 provided in the portion of the resin reservoir 63 where the resin reservoir gate portion 65 is not provided is indicated by a dotted line.

[0215] In the resin reservoir 63 of the molding die 51, by providing the resin reservoir gate 65 which is connected to the resin reservoir 63 and has a narrow opening cross-sectional area, it is possible to suppress the flowing resin 83 from flowing into the resin reservoir 63, as compared with the method of the comparative example (Patent Document 1). In addition, by providing the resin reservoir gate 65a and the resin reservoir gate 65b as the resin reservoir gate 65, the flow of the flowing resin toward the resin reservoir gate 65 is dispersed.

[0216] Thus, even if the volume of the resin reservoir 63 is approximately one tenth of the volume of the semiconductor device 1, the time until the flowing resin 83 flows into the resin reservoir 63 can be extended. As a result, even in the region 85 (see Fig.19 ) has a void in the portion of the flowing resin 83, and the void can be eliminated from the region 85 (position 87) until the flowing resin 83 flows into the resin reservoir 63. In addition, the amount of the flowing resin 83 flowing into the resin reservoir 63 can be reduced, which can contribute to a reduction in production costs.

[0217] In the completed semiconductor device 1, the surface of the semiconductor device 1 sealed in the first cavity 52a has a resin injection mark 34a and a runner mark 34c remaining. The area of ​​the resin injection mark 34a and the area of ​​the runner mark 34c are substantially the same (see Figure 6 On the other hand, the surface of the semiconductor device 1 sealed in the second cavity 52b has a runner mark 34c and a resin pool mark 34b. The area of ​​the resin pool mark 34b is smaller than the area of ​​the runner mark 34c (see Figure 1 ). The surface roughness of the resin trace 34 including the resin pool trace 34 b can be easily confirmed from the appearance of the semiconductor device 1 (molding resin 33 ).

[0218] Implementation method 4.

[0219] Semiconductor manufacturing apparatus and the like according to Embodiment 4 will be described. Here, a semiconductor manufacturing apparatus and the like to which a molding die capable of mounting the molding resin that has flowed into the resin reservoir 63 and solidified is applied will be described.

[0220] First, the molding die is described. Fig.47 As shown, in the molding die 51, a resin reservoir gate 65 and a resin reservoir 63 are formed in the upper die 55. The position (Z-axis direction) of the ceiling of the resin reservoir 63 is arranged higher than the position (Z-axis direction) of the ceiling of the cavity 52.

[0221] The distance from the lower end of the upper mold 55 to the ceiling of the cavity 52 is defined as distance L19a, and the distance from the lower end of the upper mold 55 to the ceiling of the resin reservoir 63 is defined as distance L19b. In the molding die 51, the resin reservoir 63 is formed in the upper mold 55 such that the distance L19b is longer than the distance L19a.

[0222] Next, a method for manufacturing a semiconductor device using the above-mentioned molding die 51 is described. In the same manner as the method for manufacturing a semiconductor device described in the first embodiment, a lead frame 45 (see FIG. 5 ) on which a power semiconductor element 21 and the like are mounted is formed. Fig.15 ). Then, in Fig.47 The molding die 51 shown is provided with a lead frame 45 (see Fig.15 ).

[0223] Then, with Figure 16~Figure 21 Similarly to the process shown in FIG. 1 , the fluid resin is gradually filled into the cavity 52. ​​In the resin reservoir 63, the fluid resin flowing into the resin reservoir 63 is solidified. Thereafter, the molding die 51 is disassembled. At this time, the molding resin 99 (see FIG. 1 ) flowing into the resin reservoir 63 and solidified is not Fig.48 ) is removed and the molded resin 99 is kept connected to the molded resin 33. In this way, the semiconductor device 1 in which the molded resin 99 as the sealing material block is connected to the molded resin 33 is completed (refer to Fig.48 ).

[0224] Then, if Fig.48 and Fig.49 As shown, the semiconductor device 1 is mounted on the electronic circuit board 101. The semiconductor device 1 is arranged on the electronic circuit board 101 via the conductive adhesive 103. At this time, the mold resin 99 is embedded in the opening 101a previously provided in the electronic circuit board 101. In addition, as the conductive adhesive 103, for example, cream solder or the like is used.

[0225] Next, the conductive adhesive 103 is melted by a reflow process and then solidified by cooling, whereby the semiconductor device 1 is mounted on the electronic circuit board 101 .

[0226] In the above-described semiconductor device 1 , when the semiconductor device 1 is mounted on the electronic circuit board 101 , it is possible to prevent the position of the semiconductor device 1 from being shifted during the reflow process. This will be described.

[0227] The weight of the semiconductor device 1 equipped with a power semiconductor element is heavier than that of a conventional surface mount component mounted on an electronic circuit board. In addition, the bonding force of the conductive adhesive 103 before curing is weaker than the bonding force of the conductive adhesive 103 after curing.

[0228] Therefore, in the reflow process, for example, when the electronic circuit substrate 101 is transported, the semiconductor device 1 cannot be fixed to the electronic circuit substrate 101 due to the adhesive force of the conductive adhesive 103 , and it is conceivable that the semiconductor device 1 is offset from the mounting position of the electronic circuit substrate 101 .

[0229] In the semiconductor device 1 described above, the molded resin 99 is in a state of being connected to the molded resin 33. The electronic circuit board 101 is provided with an opening 101a into which the molded resin 99 is inserted. When the semiconductor device 1 is disposed on the electronic circuit board 101, the molded resin 99 is inserted into the opening 101a provided in the electronic circuit board 101.

[0230] Thus, the semiconductor device 1 is positioned on the electronic circuit substrate 101. As a result, during the reflow process, it is possible to suppress the semiconductor device 1 from being displaced from the mounting position on the electronic circuit substrate 101. In addition, by suppressing the semiconductor device 1 from being displaced from the mounting position on the electronic circuit substrate 101, the amount of the conductive adhesive 103 can be suppressed to a necessary minimum.

[0231] Implementation method 5.

[0232] A semiconductor manufacturing apparatus and the like according to Embodiment 5 will be described. Here, a semiconductor manufacturing apparatus and the like to which a molding die having a plurality of resin reservoirs is applied will be described.

[0233] First, the molding die is described. Fig.50 As shown, in the molding die 51 (lower die 53), for example, a resin reservoir 63c, a resin reservoir 63d, and a resin reservoir 63e are formed as the resin reservoir 63. The resin reservoir 63c, the resin reservoir 63d, and the resin reservoir 63e are connected in series.

[0234] A resin accumulation gate portion 65 is formed to connect the resin accumulation portion 63c with the second cavity 52b. A resin accumulation gate portion 70 is formed as a gate portion between sealing material accumulation portions to connect the resin accumulation portions 63. A resin accumulation gate portion 70a is formed as a gate portion 70 between resin accumulation portions to connect the resin accumulation portion 63c with the resin accumulation portion 63d. A resin accumulation gate portion 70b is formed as a gate portion 70 between resin accumulation portions to connect the resin accumulation portion 63d with the resin accumulation portion 63e. The cross-sectional areas of the resin accumulation gate portion 65 and the gate portions 70a and 70b between resin accumulation portions may be the same or different, but are preferably smaller than the cross-sectional area of ​​the resin injection gate portion 59.

[0235] In addition, regarding the structure other than this, due to Figure 8 The structure of the molding die 51 shown is the same, so the same reference numerals are given to the same components, and the description thereof will not be repeated unless necessary.

[0236] Next, a method for manufacturing a semiconductor device using the above-mentioned molding die 51 is described. In the same manner as the method for manufacturing a semiconductor device described in the first embodiment, a lead frame 45 (see FIG. 5 ) on which a power semiconductor element 21 and the like are mounted is formed. Fig.15 ). Then, if Fig.51 As shown, the lead frame 45 is disposed in a molding die 51 .

[0237] Then, with Figure 16~Figure 21 Similarly to the process shown, the flow resin is gradually filled into the cavity 52. ​​The flow resin in the second cavity 52b flows into the resin reservoir 63c through the resin reservoir gate 65. When the flow resin is filled into the resin reservoir 62, it flows into the resin reservoir 63d through the resin reservoir gate 70a. The flow resin that has flowed into the resin reservoir 63d flows into the resin reservoir 63e through the resin reservoir gate 70b. After the flow resin that has flowed into the cavity 52 is solidified, the molding die 51 is disassembled, and the semiconductor device sealed by the molding resin is completed.

[0238] In the above-described method of manufacturing a semiconductor device, resin reservoirs 63c, 63d, and 63e are formed in molding die 51 as resin reservoirs 63. Resin reservoirs 63c, 63d, and 63e are connected in series via a gate 70 between resin reservoirs.

[0239] Therefore, compared with the case of using a molding die having one resin reservoir having the same volume as the total volume of resin reservoir 63c, resin reservoir 63d, and resin reservoir 63e, the speed of the flowing resin filled in resin reservoir 63c, resin reservoir 63d, and resin reservoir 63e in sequence becomes smaller.

[0240] This makes it easy to make the area 85 (see Fig.17 As a result, the molded resin 33 (see Figure 3 The electrical insulation of the first main surface 33e side (etc.)

[0241] Furthermore, in each embodiment, a power semiconductor element is cited as an example of a semiconductor element, but the present invention is also applicable to semiconductor elements other than power semiconductor elements.

[0242] The semiconductor manufacturing apparatus and manufacturing method described in each embodiment can be combined in various ways as needed.

[0243] Furthermore, the semiconductor device includes the following aspects.

[0244] (Note 1)

[0245] A semiconductor device, comprising:

[0246] Lead terminals;

[0247] A chip pad connected to the lead terminal;

[0248] a semiconductor element mounted on the die pad; and

[0249] a sealing material that seals the die pad and the semiconductor element in a manner that a portion of the lead terminal is exposed,

[0250] The sealing material has a first side portion and a second side portion which are spaced apart in a first direction and face each other.

[0251] There are traces of sealing material on the first side,

[0252] A sealing material block portion protrudes from the second side portion.

[0253] (Note 2)

[0254] The semiconductor device according to Supplementary Note 1, wherein:

[0255] An electronic circuit substrate having an opening formed therein,

[0256] The sealing material block is mounted on the electronic circuit board in a state of being fitted into the opening.

[0257] The embodiments disclosed this time are illustrative and are not limited thereto. The present disclosure is indicated by the claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the claims.

[0258] Industrial Applicability

[0259] The present disclosure can be effectively used for a semiconductor device manufactured by transfer molding and a method for manufacturing the same.

[0260] Description of Reference Numerals

[0261] 1 Power semiconductor device, 3 Power lead, 5 Power lead terminal, 7, 7a, 7b Lead step portion, 9 Large chip pad, 11a, 11b, 11c Terminal portion, 13 Bend portion, 15, 15a, 15b, 15c Small chip pad, 17a, 17b, 17c Top end, 19 Conductive adhesive, 21 Power semiconductor element, 23 IC lead, 25 IC lead terminal, 27 Conductive adhesive, 29 IC element, 31 Lead wire, 33 Molding resin, 33a First side portion, 33b Second side portion, 33c Third side portion, 33d Fourth side portion, 33e First main surface, 33f Second main surface, 34 Resin trace, 34a Resin injection trace, 34b Resin accumulation trace, 34c Runner trace, 35 Tie bar, 37 Frame, 39, 41a, 41b cutout, 43 suspension lead, 45 lead frame, 51 molding die, 52 cavity, 52a first cavity, 52b second cavity, 53 lower die, 53a upper surface, 55 upper die, 55a lower surface, 57 plunger, 59 resin injection gate, 61 runner, 63, 63a, 63b, 63c, 63d, 63e resin reservoir, 64 inclined portion, 65, 65a, 65b, 65c, 65d resin reservoir gate, 66a, 66b portion, 67 inclined portion, 67a top, 69 movable pin, 79, 79a, 79b vent hole, 70, 70a, 70b gate between resin reservoirs, 81 tablet resin, 83 flowing resin, 85 region, 87 position, 93a, 93b protrusion, 97 step, 99 molding resin, D diameter, W, Wa, Wb width, AL1, AL2 angle, L10, L11, L12, L14a, L14b, L15a, L15b, L16a, L16b, L17 length, L18 distance, L19a, L19b length, LZ4, LZ5 height, LY1, LY2 width, 101 electronic circuit board, 101a opening, 103 conductive adhesive.

Claims

1. A semiconductor manufacturing device, wherein a mold die including a lower mold and an upper mold is used to form a cavity extending in a first direction, a lead frame having a semiconductor element mounted thereon and having a large chip pad and a small chip pad is arranged in the cavity, and a sealing material is injected into the cavity to seal the lead frame together with the semiconductor element, wherein: The semiconductor manufacturing apparatus comprises: A sealing material injection gate portion is provided, wherein the sealing material injection gate portion injects the sealing material into the mold cavity; One or more sealing material storage parts are arranged on the other side of the cavity separated from the one side where the sealing material injection gate is arranged in the first direction, and store the sealing material flowing in through the cavity; as well as a sealing material reservoir gate portion, wherein the sealing material reservoir gate portion connects the cavity with the sealing material reservoir portion, The sealing material injection gate has a first opening cross-sectional area, The sealing material storage gate has a second opening cross-sectional area, The second opening cross-sectional area is smaller than the first opening cross-sectional area, The sealing material injection gate is arranged at a position closer to the large die pad than the small die pad.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: The sealing material reservoir gate portion and the sealing material reservoir portion are provided in at least one of the lower mold and the upper mold.

3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material storage gate portion comprises: a first portion, the first portion being located on the cavity side and having the second opening cross-sectional area; as well as The second portion is located on the sealing material reservoir side relative to the first portion and has a third opening cross-sectional area larger than the second opening cross-sectional area.

4. The semiconductor manufacturing apparatus according to claim 3, wherein: The semiconductor manufacturing apparatus includes an inclined portion inclined from the first portion toward the second portion.

5. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material storage gate is arranged at a position closest to the sealing material injection gate on the other side.

6. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material reservoir gate is arranged at a position on the other side that is away from a position closest to the sealing material injection gate in a second direction intersecting the first direction.

7. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material reservoir comprises a first sealing material reservoir and a second sealing material reservoir, The sealing material accumulation gate portion comprises: a first sealing material reservoir gate portion, the first sealing material reservoir gate portion communicating between the cavity and the first sealing material reservoir portion; and The second sealing material reservoir gate portion communicates between the cavity and the second sealing material reservoir portion.

8. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material reservoir gate portion communicates the cavity with the sealing material reservoir portion in a direction intersecting the first direction.

9. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The sealing material reservoir includes at least one sealing material reservoir and other sealing material reservoirs. The sealing material reservoir gate portion connects the cavity with one of the sealing material reservoir portions. One of the sealing material reservoirs is communicated with the other sealing material reservoirs via a gate between sealing material reservoirs.

10. A method for manufacturing a semiconductor device, wherein: The method for manufacturing a semiconductor device comprises: A process for preparing a lead frame having a large die pad and a small die pad; a step of mounting a semiconductor element on the lead frame; A step of preparing a molding die, wherein the molding die includes a lower die and an upper die, and a cavity is formed by using the lower die and the upper die; a step of placing the lead frame on which the semiconductor element is mounted in the molding die; The step of injecting a sealing material into the cavity; and a step of disassembling the molding die, The step of preparing the molding die comprises the step of preparing the molding die as follows, wherein the molding die comprises a sealing material injection gate portion, one or more sealing material accumulation portions, and a sealing material accumulation gate portion, wherein the sealing material injection gate portion is arranged at a position closer to the large chip pad than the small chip pad, injects the sealing material toward the cavity and has a first opening cross-sectional area, the one or more sealing material accumulation portions are arranged on a second side opposite to the first side where the sealing material injection gate portion is arranged across the cavity, and accumulates the sealing material flowing in through the cavity, the sealing material accumulation gate portion connects the cavity with the sealing material accumulation portion and has a second opening cross-sectional area smaller than the first opening cross-sectional area, The step of injecting the sealing material into the cavity includes the step of injecting the sealing material until the sealing material filled in the cavity flows into the sealing material reservoir.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: The process of disassembling the molding die includes: A step of removing a portion of the sealing material that has flowed into the sealing material reservoir from the sealing material filled in the cavity; and and removing a portion of the sealing material located at the sealing material injection gate from the sealing material filled in the cavity.

12. The method for manufacturing a semiconductor device according to claim 10 or 11, wherein: The step of preparing the lead frame includes the step of preparing the lead frame including a die pad and a portion to be a lead terminal, wherein the die pad has a height position different from the height position of the portion to be the lead terminal, The step of mounting the semiconductor element on the lead frame includes the step of mounting the semiconductor element on the large chip pad and the small chip pad. The step of arranging the lead frame in the molding die includes the steps of: arranging the lead frame in such a manner that a first filling space having a first distance in a height direction is formed between the die pad and a portion of the lower die constituting the cavity, and a second filling space having a second distance in the height direction longer than the first distance is formed between the die pad and a portion of the upper die constituting the cavity, The step of injecting the sealing material includes the step of filling the first filling space and the second filling space with the sealing material.

13. The method for manufacturing a semiconductor device according to claim 10 or 11, wherein: The step of preparing the lead frame includes the step of preparing the lead frame having a cutout portion that does not cover a region where the sealing material reservoir is located when the lead frame is arranged in the molding die.

14. A semiconductor device, wherein: The semiconductor device has: A large chip pad, wherein the large chip pad carries a semiconductor element; A chiplet pad, the chiplet pad carrying another semiconductor element different from the one semiconductor element; as well as a sealing material, wherein the sealing material seals the large chip pad, the small chip pad, the one semiconductor element, and the other semiconductor elements, The sealing material has a first side portion and a second side portion which are spaced apart in a first direction and face each other. A first sealing material trace is provided on the first side portion, There is one or more second sealing material traces on the second side portion, The area of ​​the second sealing material trace is smaller than the area of ​​the first sealing material trace, The first sealing material trace remains at a position closer to the large chip pad than the small chip pad.

15. The semiconductor device according to claim 14, wherein: The second sealing material trace remains at a position of the second side portion that faces the first sealing material trace in the first direction.

16. The semiconductor device according to claim 14 or 15, wherein: The sealing material comprises: a first sealing material portion covering a side of the large chip pad on which the one semiconductor element is mounted; and a second sealing material portion covering a side of the large chip pad opposite to a side on which the one semiconductor element is mounted, The thickness of the second sealing material portion is thinner than the thickness of the first sealing material portion.

17. The semiconductor device according to claim 14 or 15, wherein: The second sealing material trace remains at a position in the second side portion that is spaced apart from a position facing the first sealing material trace in the first direction along the second side portion.

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