Semiconductor component, method for forming the same, and plasma processing apparatus

Abstract

A semiconductor component, a method for forming the same, and a plasma processing apparatus, wherein the semiconductor component includes a component body, a bonding layer on a surface of the component body, and a corrosion-resistant coating layer on a surface of the bonding layer, a material of the corrosion-resistant coating layer including a silicon aluminum oxynitride. The semiconductor component is resistant to plasma corrosion and is less likely to generate particle contamination.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor, in particular to a semiconductor component, a forming method of semiconductor component and a plasma processing device. BACKGROUND

[0002] Plasma etching process plays a key role in the field of integrated circuit. For the components in the severe etching environment of plasma etching chamber, it is required to have quite high plasma etching resistance. For this purpose, there are patents proposing to coat the surface of the components in the plasma etching chamber with aluminum oxide or yttrium oxide corrosion resistant coating to protect the workpiece, which produces good plasma etching resistance effect.

[0003] However, the aluminum oxide corrosion resistant coating is easy to react with fluorine ions in the plasma environment to form volatile aluminum fluoride by-products, which will cause pollution to the substrate if falling. The yttrium oxide corrosion resistant coating has high preparation cost, and its thermal expansion coefficient is large, and in the process of plasma bombardment etching, the residual stress at the boundary of yttrium oxide is easy to cause pores or cracking, therefore, it is urgent to provide a semiconductor component with plasma etching resistance to reduce the problem of particle pollution. SUMMARY

[0004] The technical problem solved by the present application is to provide a semiconductor component, a forming method of semiconductor component and a plasma processing device to reduce particle pollution.

[0005] To solve the above technical problem, the present application provides a semiconductor component, comprising: a component body; a bonding layer located on the surface of the component body; a corrosion resistant coating layer located on the surface of the bonding layer, the material of the corrosion resistant coating layer comprising a silicon aluminum oxygen nitrogen compound.

[0006] Optionally, the material of the bonding layer comprises at least one of YF3, Y2O3, YO x F 1-X (0

[0007] Optionally, further comprising: a transition layer located between the bonding layer and the corrosion resistant coating layer.

[0008] Optionally, the material of the transition layer is a mixture of the material of the bonding layer and the material of the corrosion resistant coating layer; from the surface of the bonding layer along the thickness direction of the transition layer, the material of the bonding layer in the transition layer decreases in turn and the material of the corrosion resistant coating layer increases in turn.

[0009] Optionally, from the surface of the bonding layer along the thickness direction of the transition layer, the material of the corrosion resistant coating layer in the transition layer is uniformly distributed at 5wt% to 99wt%.

[0010] Optionally, the corrosion-resistant coating has a crystalline structure.

[0011] Optionally, the material of the corrosion-resistant coating is α-SiAlON or β-SiAlON.

[0012] Optionally, the corrosion-resistant coating exists in the form of a solid solution.

[0013] Optionally, the thickness of the corrosion-resistant coating is 20 micrometers to 40 micrometers.

[0014] Accordingly, the present invention also provides a plasma processing apparatus, comprising: a reaction chamber containing a plasma environment; the aforementioned semiconductor components, wherein the corrosion-resistant coating is exposed to the plasma environment.

[0015] Optionally, the plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma, or O-containing plasma.

[0016] Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

[0017] Optionally, when the plasma processing device is an inductively coupled plasma processing device, the components include at least one of the following: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, and a plasma confinement device.

[0018] Optionally, when the plasma processing device is a capacitively coupled plasma processing device, the components include at least one of the following: a spray head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, and a plasma confinement device.

[0019] Accordingly, the present invention also provides a method for forming a rising semiconductor component, comprising: providing a component body; forming a bonding layer on the surface of the component body; and forming a corrosion-resistant coating on the surface of the bonding layer.

[0020] Optionally, the bonding layer can be formed using either atomic layer deposition or physical vapor deposition.

[0021] Optionally, the corrosion-resistant coating is formed using a physical vapor deposition process.

[0022] Optionally, the target material for forming the corrosion-resistant coating using physical vapor deposition is a single target material, and the material of the single target material is a silicon-aluminum-oxygen-nitrogen compound.

[0023] Optionally, the target material for forming the corrosion-resistant coating using physical vapor deposition is a dual target material, which includes an aluminum nitride target material and a silicon oxide target material. The aluminum ions and nitrogen ions excited by the aluminum nitride target material react chemically with the oxygen ions and silicon ions excited by the silicon oxide target material to form a silicon-aluminum-oxygen-nitrogen compound.

[0024] Optionally, a transition layer is further provided between the bonding layer and the corrosion-resistant coating, the transition layer being a mixture of the bonding layer material and the corrosion-resistant coating material; when both the bonding layer and the corrosion-resistant coating are formed by physical vapor deposition, the working current of the target material forming the bonding layer decreases over time, while the working current of the target material forming the corrosion-resistant coating increases.

[0025] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0026] The semiconductor component provided by this invention has a bonding layer and a corrosion-resistant coating on its surface. The bonding layer enhances the adhesion between the corrosion-resistant coating and the component body. The corrosion-resistant coating is made of a silicon-aluminum-oxygen-nitrogen compound. Silicon-aluminum-oxygen-nitrogen compounds are chemically stable and do not readily react with ions in a plasma environment, thus minimizing particulate contamination. Furthermore, silicon-aluminum-oxygen-nitrogen compounds have a low coefficient of thermal expansion, making them less prone to residual stress; therefore, the corrosion-resistant coating is less likely to develop pores or cracks. In summary, the semiconductor component exhibits excellent corrosion resistance in plasma environments and is less prone to particulate contamination. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention;

[0028] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention;

[0029] Figure 3 This is a schematic diagram of the structure of a semiconductor component according to the present invention;

[0030] Figure 4 This is a schematic diagram of the structure of another semiconductor component of the present invention;

[0031] Figure 5 This is a process flow diagram of the semiconductor components formed according to the present invention;

[0032] Figure 6 This is a schematic diagram of an apparatus for forming the semiconductor component according to the present invention. Detailed Implementation

[0033] As described in the background section, alumina and yttrium oxide are prone to particulate contamination. Therefore, this invention aims to provide a semiconductor component with good resistance to plasma corrosion and the ability to reduce particulate contamination, which is described in detail below:

[0034] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention.

[0035] Please refer to Figure 1 The plasma reaction device includes a reaction chamber 100, which is a plasma environment. Semiconductor components and the inner wall of the reaction chamber 100 are exposed to the plasma environment. The plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma, or O-containing plasma.

[0036] The plasma reaction apparatus also includes a base 101, which supports the substrate W to be treated, and the plasma is used to treat the substrate W. Because plasma is highly corrosive, a corrosion-resistant coating needs to be applied to the surface of the semiconductor components to prevent corrosion.

[0037] In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: spray head 102, upper grounding ring 104, moving ring, gas distribution plate 105, gas buffer plate, electrostatic chuck assembly 103, lower grounding ring 106, covering ring 107, focusing ring 108, insulating ring, and plasma confinement device 109.

[0038] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention.

[0039] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: ceramic plate, inner sleeve 600, gas nozzle 601, gas distribution plate, gas pipe flange, electrostatic chuck assembly 602, cover ring 603, focusing ring 604, insulating ring, and plasma confinement device 605.

[0040] During the plasma etching process, physical bombardment and chemical reactions also act on all semiconductor components inside the etching chamber that come into contact with the plasma, corroding the semiconductor components. After being exposed to the plasma corrosion environment for a long time, the surface structure is damaged, resulting in the precipitation of the bulk components, which break away from the surface to form tiny particles and contaminate the wafer. The advanced semiconductor manufacturing has strict requirements for micro-particle contamination. For example, the number of particles larger than 45nm is 0, and the ground adhesion rate is even lower than 10. Therefore, it is necessary to coat the surface of the component body in the plasma reaction device with a corrosion-resistant coating to resist plasma corrosion.

[0041] The semiconductor components are described in detail as follows:

[0042] Figure 3 It is a schematic structural diagram of a semiconductor component of the present invention.

[0043] Please refer to Figure 3 , the semiconductor component includes: a component body 200; a bonding layer 201 located on the surface of the component body 200; a corrosion-resistant coating 202 located on the surface of the bonding layer 201, and the material of the corrosion-resistant coating is silicon aluminum oxynitride.

[0044] The material of the component body 200 is one of Al, Al2O3, Si or SiC.

[0045] The materials of the bonding layer 201 include: YF3, Y2O3, YO x F 1-X (0 < x < 0.8) or at least one of yttrium aluminum oxides.

[0046] The bonding layer 201 can improve the bonding force between the corrosion-resistant coating 202 and the component body 200.

[0047] The material of the corrosion-resistant coating 202 is silicon aluminum oxynitride. The chemical properties of silicon aluminum oxynitride are relatively stable and it is not easy to react with ions in the plasma environment to form by-products. Therefore, it is beneficial to reduce particle contamination. At the same time, the corrosion-resistant coating 202 has a low coefficient of thermal expansion. During the process of plasma bombardment corrosion, the boundary of the corrosion-resistant coating 202 is not likely to remain stressed, resulting in pores or cracks in the coating.

[0048] In one embodiment, the material of the corrosion-resistant coating 202 is α-SiAlON. Since α-SiAlON is non-electroneutral and needs cation compensation for the unbalanced valence, H+ can be fixed into the lattice of α-SiAlON, and α-SiAlON can resist the corrosion of H + ions during the etching reaction process.

[0049] In another embodiment, the corrosion-resistant coating 202 is made of β-SiAlON, with β-Si3N4 as the structural basis of the hexagonal β-SiAlON structure. The main crystalline phase grains are long columnar, exhibiting good strength and toughness. The corrosion-resistant coating 202 has a denser structure and is less prone to cracking during thermal cycling.

[0050] Figure 4 This is a schematic diagram of the structure of another semiconductor component of the present invention.

[0051] Please refer to Figure 4 The semiconductor component includes: a component body 300; a bonding layer 301 located on the surface of the component body 300; a transition layer 303 located on the surface of the bonding layer 301; and a corrosion-resistant coating 302 located on the surface of the transition layer 303.

[0052] The component body 300, bonding layer 301 and corrosion-resistant coating 302 are made of the same materials and have the same function as those in the above embodiments, and will not be described again here.

[0053] In this embodiment, a transition layer 303 is further provided between the bonding layer 301 and the corrosion-resistant coating 302. The material of the transition layer 303 is a mixture of the materials of the bonding layer 301 and the corrosion-resistant coating 302. From the surface of the bonding layer 301 along the thickness direction of the transition layer 303, the material of the bonding layer 301 in the transition layer 303 decreases sequentially while the material of the corrosion-resistant coating 302 in the transition layer 303 increases sequentially. This makes the material difference between the transition layer 303 and the bonding layer 301, and between the transition layer 303 and the corrosion-resistant coating 302, smaller. Therefore, it is beneficial to improve the bonding force between the transition layer 303 and the bonding layer 301, and between the transition layer 303 and the corrosion-resistant coating 302, making it less likely for the corrosion-resistant coating 302, the transition layer 303, and the bonding layer 301 to detach due to delamination.

[0054] In one embodiment, the corrosion-resistant coating 302 in the transition layer 303 is uniformly distributed in the range of 5wt% to 99wt% from the surface of the bonding layer 301 along the thickness direction of the transition layer 303. This can significantly improve the contact between the corrosion-resistant coating 302 and the bonding layer 301, thereby enhancing the bonding force between the corrosion-resistant coating 302 and the bonding layer 301.

[0055] Figure 5 This is a process flow diagram of the semiconductor component formed according to the present invention.

[0056] Please refer to Figure 5 Step S1: Provide a component body; Step S2: Form the bonding layer on the surface of the component body; Step S3: Form a corrosion-resistant coating on the surface of the bonding layer, wherein the material of the corrosion-resistant coating is a silicon aluminum oxynitride compound.

[0057] The bonding layer is made of at least one of yttrium oxide, yttrium fluoride, or yttrium aluminum oxide. In this embodiment, the bonding layer is formed using atomic layer deposition (ALD). ALD, by depositing the bonding layer material at the atomic level onto the surface of the component body, improves the bonding strength between the bonding layer and the component body.

[0058] In other embodiments, the process for forming the bonding layer includes physical vapor deposition.

[0059] The corrosion-resistant coating is made of α-SiAlON or β-SiAlON, and the formation process of the corrosion-resistant coating includes physical vapor deposition.

[0060] In one embodiment, the target material for forming the corrosion-resistant coating using a physical vapor deposition process is a single target material, and the material of the single target material is a silicon-aluminum-oxygen-nitrogen compound.

[0061] In another embodiment, the target material for forming the corrosion-resistant coating using physical vapor deposition is a dual target material, which includes an aluminum nitride target material and a silicon oxide target material. The aluminum ions and nitrogen ions excited by the aluminum nitride target material react chemically with the oxygen ions and silicon ions excited by the silicon oxide target material to form a silicon-aluminum-oxygen-nitrogen compound.

[0062] The reason why the adhesion between the corrosion-resistant coating and the bonding layer is also strong is that the surface of the bonding layer contains yttrium components. During the deposition of SiAlON, the Al components are more likely to be anchored on the surface of the unsaturated coordinated O atoms on the surface of the bonding layer to form a YO-Al transition structure.

[0063] The reason why the corrosion-resistant coating exists as a solid solution is that (SiO2 and AlN have similar crystal structures and contain voids, and according to the principle of similar compatibility, they can easily form a solid solution).

[0064] In this embodiment, the thickness of the corrosion-resistant coating is 20 micrometers to 40 micrometers. The significance of selecting the thickness of the corrosion-resistant coating is that if the thickness of the corrosion-resistant coating is less than 20 micrometers, the corrosion-resistant coating is not enough to protect the component body, making the component body still susceptible to plasma corrosion; if the thickness of the corrosion-resistant coating is greater than 40 micrometers, the stress of the corrosion-resistant coating is greater, and stress release will cause cracks.

[0065] The adhesion of corrosion-resistant coatings is related to the interaction between the substrate and the coating itself; a thicker coating weakens this interaction. As the coating thickness increases, the anchoring effect of O or Si elements in the substrate on the coating gradually decreases, and if a transition layer exists, YO-Al may fracture.

[0066] Figure 6 This is a schematic diagram of an apparatus for forming the semiconductor component according to the present invention.

[0067] Please refer to Figure 6 The apparatus for forming the semiconductor component includes: a vacuum chamber 400; a yttrium oxide target 401 and a silicon aluminum oxynitride target 402 disposed within the vacuum chamber 400; a component body 500 located within the vacuum chamber 400 and disposed opposite to the yttrium oxide target 401 and the silicon aluminum oxynitride target 402; a first excitation device 403 for exciting the yttrium oxide target 401 to form yttrium atoms and oxygen atoms, wherein the yttrium atoms and oxygen atoms form a bonding layer 501 on the surface of the component body 500; and a second excitation device 404 for exciting the silicon aluminum oxynitride target 402 to form silicon atoms, aluminum atoms, oxygen atoms and nitrogen atoms, wherein a corrosion-resistant coating 502 is formed on the surface of the bonding layer 501.

[0068] pass Figure 6 The device described above can form a bonding layer 501 and a corrosion-resistant coating 502 on the surface of the component body 500. The formation method includes: using a first excitation device 403 to excite a yttrium oxide target 401 to form the bonding layer 501 on the surface of the component body 500; during the formation of the bonding layer 501, the second excitation device 404 is not activated; after the bonding layer 501 is formed, using the second excitation device 404 to excite a silicon-aluminum-oxygen-nitrogen target 402 to form the corrosion-resistant coating 502 on the surface of the bonding layer 501; during the formation of the corrosion-resistant coating 502, the first excitation device 403 is turned off.

[0069] use Figure 6 The apparatus shown can also sequentially form a bonding layer 501, a transition layer (not shown), and a corrosion-resistant coating 502 on the surface of the component body 500. The material of the transition layer is a mixture of the bonding layer 501 material and the corrosion-resistant coating 502 material. From the surface of the bonding layer 501 along the thickness direction of the transition layer, the material of the bonding layer 501 in the transition layer decreases sequentially while the material of the corrosion-resistant coating 502 increases sequentially. The method for forming the bonding layer 501, the transition layer, and the corrosion-resistant coating 502 includes: activating only the first excitation device 403 to excite the yttrium oxide target, forming the bonding layer 501 on the surface of the component body 500; gradually decreasing the operating current of the first excitation device 403 and gradually increasing the operating current of the second excitation device 404, forming the transition layer on the surface of the bonding layer 501; after forming the transition layer, turning off the first excitation device 403 and activating only the second excitation device 404, forming the corrosion-resistant coating 404 on the surface of the transition layer.

[0070] In addition, the bonding layer 501 can be formed by atomic layer deposition, and the corrosion-resistant coating 502 can be formed by dual targets, including an aluminum nitride target and a silicon oxide target. The aluminum ions and nitrogen ions excited by the aluminum nitride target react chemically with the oxygen ions and silicon ions excited by the silicon oxide target to form a silicon-aluminum-oxygen-nitrogen compound corrosion-resistant coating 502.

[0071] Silicon-aluminum-oxygen-nitrogen (SiAHN) is selected as the material for the corrosion-resistant coating 502. The corrosion-resistant coating 502 has relatively stable chemical properties and is not prone to chemical reactions with ions in the plasma environment, thus preventing particulate contamination. Furthermore, SiAHN has a low coefficient of thermal expansion, making the corrosion-resistant coating 502 less prone to cracking.

[0072] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A semiconductor component, characterized in that, include: The component body includes a surface to be processed, the surface to be processed being oriented toward a plasma environment, the plasma environment including F-containing plasma and H-containing plasma; A bonding layer is located on the surface of the component body to be processed, and the material of the bonding layer includes YO. x F 1-X (0 <x<0.8); A corrosion-resistant coating is located on the surface of the bonding layer. The material of the corrosion-resistant coating includes a silicon-aluminum-oxygen-nitrogen compound. The aluminum element in the corrosion-resistant coating is anchored to the surface of unsaturated coordinated oxygen atoms on the surface of the bonding layer to form a YO-Al transition structure.

2. The semiconductor component as described in claim 1, characterized in that, Also includes: A transition layer is located between the bonding layer and the corrosion-resistant coating.

3. The semiconductor component as described in claim 2, characterized in that, The transition layer is a mixture of bonding layer material and corrosion-resistant coating material; from the surface of the bonding layer along the thickness direction of the transition layer, the material of the bonding layer in the transition layer decreases sequentially while the material of the corrosion-resistant coating increases sequentially.

4. The semiconductor component as described in claim 3, characterized in that, The material of the corrosion-resistant coating in the transition layer is uniformly distributed from the surface of the bonding layer along the thickness direction of the transition layer at a concentration of 5 wt% to 99 wt%.

5. The semiconductor component as described in claim 1, characterized in that, The corrosion-resistant coating has a crystalline structure.

6. The semiconductor component as described in claim 1, characterized in that, The material of the corrosion-resistant coating is α-SiAlON or β-SiAlON.

7. The semiconductor component as described in claim 1, characterized in that, The corrosion-resistant coating exists in the form of a solid solution.

8. The semiconductor component as described in claim 1, characterized in that, The thickness of the corrosion-resistant coating is 20 micrometers to 40 micrometers.

9. A plasma processing apparatus, characterized in that, include: The reaction chamber contains a plasma environment. The semiconductor component as claimed in any one of claims 1 to 8, wherein the corrosion-resistant coating is exposed to the plasma environment.

10. The plasma processing apparatus as described in claim 9, characterized in that, The plasma processing device is either a plasma etching device or a plasma cleaning device.

11. The plasma processing apparatus as claimed in claim 10, characterized in that, When the plasma processing device is an inductively coupled plasma processing device, the components include at least one of the following: ceramic plate, inner liner, gas nozzle, gas distribution plate, gas pipe flange, electrostatic chuck assembly, cover ring, focusing ring, insulating ring, and plasma confinement device.

12. The plasma processing apparatus as claimed in claim 10, characterized in that, When the plasma processing device is a capacitively coupled plasma processing device, the components include at least one of the following: a spray head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, and a plasma confinement device.

13. A method for forming a semiconductor component as described in any one of claims 1 to 8, characterized in that, include: Provide the main body of the components; A bonding layer is formed on the surface of the component body; A corrosion-resistant coating is formed on the surface of the bonding layer.

14. The method for forming a semiconductor component as described in claim 13, characterized in that, The formation process of the bonding layer includes: atomic layer deposition or physical vapor deposition.

15. The method for forming a semiconductor component as described in claim 14, characterized in that, The corrosion-resistant coating is formed using a physical vapor deposition process.

16. The method for forming a semiconductor component as described in claim 15, characterized in that, The target material for forming the corrosion-resistant coating using physical vapor deposition is a single target material, and the material of the single target material is a silicon-aluminum-oxygen-nitrogen compound.

17. The method for forming a semiconductor component as described in claim 15, characterized in that, The target material for forming the corrosion-resistant coating using physical vapor deposition is a dual target material, which includes an aluminum nitride target material and a silicon oxide target material. The aluminum ions and nitrogen ions excited by the aluminum nitride target material react chemically with the oxygen ions and silicon ions excited by the silicon oxide target material to form a silicon-aluminum-oxygen-nitrogen compound.

18. The method for forming a semiconductor component as described in claim 15, characterized in that, A transition layer is also provided between the bonding layer and the corrosion-resistant coating. The material of the transition layer is a mixture of the bonding layer material and the corrosion-resistant coating material. When both the bonding layer and the corrosion-resistant coating are formed by physical vapor deposition, the working current of the target material forming the bonding layer decreases over time, while the working current of the target material forming the corrosion-resistant coating increases.

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