X-ray flat panel detector and manufacturing method thereof, detection device and imaging system

Abstract

This application provides an X-ray flat panel detector, its fabrication method, detection device, and imaging system. The X-ray flat panel detector includes: a substrate; a backplane layer located on the substrate, including a plurality of thin-film transistors, each thin-film transistor including a source-drain layer; a wiring layer located on the side of the backplane layer away from the substrate, including a plurality of connecting lines; and a photosensitive device layer located on the side of the wiring layer away from the substrate, including a plurality of first electrodes, each first electrode being connected to the source-drain layer of a thin-film transistor via a connecting line, and the orthographic projection of the photosensitive device layer on the substrate does not overlap with the orthographic projection of the backplane layer on the substrate. This application can improve the fill rate of the X-ray flat panel detector, thereby improving its resolution and detection performance; furthermore, the arrangement of connecting lines can further improve the resolution of the X-ray flat panel detector and achieve compatibility between the backplane layer and photosensitive device layers of different sizes, thereby reducing production costs.

Description

Technical Field

[0001] The present application relates to the field of detection technology, and specifically to an X-ray flat panel detector and a manufacturing method thereof, a detection device, and an imaging system. Background Art

[0002] Digital Radiography (DR) is a new X-ray technology developed in the 1990s. With its significant advantages such as faster imaging speed, more convenient operation, and higher imaging resolution, it has become the leading direction of digital X-ray technology and has been recognized by clinical institutions and imaging experts around the world. The technical core of DR is the flat-panel detector, which is a precise and expensive device that plays a decisive role in imaging quality. At present, flat-panel detectors are mainly divided into two categories: indirect detection and direct detection.

[0003] The traditional indirect X-ray flat panel detector mainly includes: a substrate, a thin film transistor, a photodiode and a scintillator layer arranged on one side of the substrate in sequence. Among them, the scintillator layer is used to convert X-rays into visible light, the photodiode is used to convert visible light into charge carriers and store them, and the thin film transistor acts as a switch. Under the control of an external scanning control circuit, the thin film transistor is turned on row by row, and the charge carriers stored in the photodiode are read and transmitted to the data processing circuit.

[0004] However, the inventors of the present application have discovered that, in current X-ray flat-panel detectors, since photodiodes and thin-film transistors are arranged in parallel and the photodiodes are arranged in the pixel area, the filling rate is restricted by the size of the thin-film transistors and the metal wires, thus affecting the resolution of the X-ray flat-panel detector; in addition, the prior art cannot achieve compatibility between larger pixel backplanes and photodiodes of different sizes, which in turn increases production costs. Summary of the invention

[0005] In view of this, the present application provides an X-ray flat-panel detector and a manufacturing method thereof, a detection device, and an imaging system, which are used to solve the problem of low resolution caused by the filling rate of the prior art X-ray flat-panel detector being restricted by the size of thin-film transistors and metal routing, and to solve the problem of high production cost of the prior art X-ray flat-panel detector.

[0006] In order to solve the above problems, the embodiments of the present application mainly provide the following technical solutions:

[0007] In a first aspect, an embodiment of the present application discloses an X-ray flat panel detector, comprising:

[0008] substrate;

[0009] A backplane layer, located on the substrate, comprising a plurality of thin film transistors, each of which comprises a source and drain electrode layer;

[0010] A wiring layer, located on a side of the backplane layer away from the substrate, including a plurality of connecting lines;

[0011] The photosensitive device layer is located on the side of the wiring layer away from the substrate, and includes a plurality of first electrodes. Each of the first electrodes is electrically connected to a source and drain layer of the thin film transistor through a connecting line, and the orthographic projection of the photosensitive device layer on the substrate does not overlap with the orthographic projection of the backplane layer on the substrate.

[0012] Optionally, an orthographic projection area of ​​the photosensitive device layer on the substrate is smaller than an orthographic projection area of ​​the backplane layer on the substrate.

[0013] Optionally, the backplane layer includes a passivation layer;

[0014] The passivation layer is located on a side of the thin film transistor away from the substrate, covers the substrate, and is provided with a plurality of first via holes to expose a source or a drain of each thin film transistor;

[0015] Each of the connection lines is electrically connected to a source or a drain of the thin film transistor through the first via hole.

[0016] Optionally, the routing layer includes a flat layer, which is located on a side of the photosensitive device layer close to the substrate, covers the connecting wires, and is provided with a plurality of second via holes penetrating the flat layer at preset positions;

[0017] Each of the first electrodes is electrically connected to a connecting line through the second via hole.

[0018] Optionally, the photosensitive device layer includes a photodiode and a second electrode;

[0019] The photodiode is located on a side of the first electrode away from the substrate;

[0020] The second electrode is located at a side of the photodiode away from the first electrode.

[0021] Optionally, the first electrode is a strip electrode, and the second electrode is a planar electrode; or,

[0022] The first electrode is a strip electrode, the second electrode is a strip electrode, and an orthographic projection area of ​​the second electrode on the substrate covers an orthographic projection area of ​​the first electrode on the substrate.

[0023] Optionally, the X-ray flat panel detector further comprises a protective layer, which is located on a side of the photosensitive device layer away from the substrate and covers the substrate;

[0024] The orthographic projection area of ​​the protective layer on the substrate is larger than the orthographic projection area of ​​the photosensitive device layer on the substrate.

[0025] In a second aspect, an embodiment of the present application discloses an X-ray flat panel detector device, comprising: a plurality of X-ray flat panel detectors as described in the first aspect arranged in an array;

[0026] The adjacent X-ray flat panel detectors are connected in a splicing manner, and the photosensitive device layer is arranged near the splicing position.

[0027] In a third aspect, an embodiment of the present application discloses an X-ray imaging system, comprising: the X-ray flat panel detector described in the first aspect; or,

[0028] The X-ray flat panel detection device described in the second aspect.

[0029] In a fourth aspect, an embodiment of the present application discloses a method for manufacturing an X-ray flat panel detector, comprising:

[0030] Providing a substrate, and manufacturing a backplane layer on the substrate by a patterning process, wherein the backplane layer includes a thin film transistor and a passivation layer;

[0031] A plurality of connection lines are formed on the side of the backplane layer away from the substrate by a patterning process, each of the connection lines being electrically connected to a source or drain of the thin film transistor through a first via hole penetrating the passivation layer;

[0032] Making a flat layer on the side of the connecting line away from the substrate by a patterning process;

[0033] A photosensitive device layer is manufactured on the side of the flat layer away from the substrate through a patterning process, the photosensitive device layer includes a plurality of first electrodes, each of the first electrodes is electrically connected to a connecting line through a second via hole penetrating the flat layer, and the orthographic projection of the photosensitive device layer on the substrate does not overlap with the orthographic projection of the backplane layer on the substrate.

[0034] Optionally, the manufacturing of the backplane layer on the substrate by a patterning process includes:

[0035] forming a buffer layer on the substrate;

[0036] A gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode are sequentially formed on the buffer layer by a patterning process;

[0037] A passivation layer is formed on the source electrode and the drain electrode by a patterning process.

[0038] Optionally, the step of making a plurality of connection lines on a side of the backplane layer away from the substrate by a patterning process includes:

[0039] depositing a metal layer on the passivation layer;

[0040] The metal layer is patterned to form a plurality of connection lines, wherein the orthographic projection area of ​​each connection line on the substrate covers the orthographic projection area of ​​the first via hole on the substrate and covers the orthographic projection area of ​​the second via hole on the substrate.

[0041] Optionally, the step of manufacturing a photosensitive device layer on a side of the flat layer away from the substrate by a patterning process includes:

[0042] A plurality of first electrodes are formed on the planar layer by a patterning process, each of the first electrodes being electrically connected to a connecting line through a second via hole penetrating the planar layer;

[0043] Fabricating a photodiode on the first electrode by a patterning process;

[0044] A second electrode is formed on the photodiode by a patterning process.

[0045] By means of the above technical solution, the technical solution provided by the embodiment of the present application has at least the following advantages:

[0046] Since the X-ray flat panel detector in the embodiment of the present application includes a photosensitive device layer located on the side of the wiring layer away from the substrate, and the wiring layer is located on the side of the backplane layer away from the substrate, therefore, in the embodiment of the present application, the photosensitive device layer and the backplane layer are sequentially arranged in a direction perpendicular to the substrate. Compared with the method of placing the thin film transistor and the photosensitive device layer in parallel in the prior art, the design of the photosensitive device layer in the embodiment of the present application is not affected by the thin film transistor, thereby improving the filling rate of the X-ray flat panel detector, and further improving the resolution and detection performance of the X-ray flat panel detector; in addition, since each first electrode in the embodiment of the present application is electrically connected to the source and drain layer of a thin film transistor through a connecting line, the orthographic projection of the photosensitive device layer on the substrate does not overlap with the orthographic projection of the backplane layer on the substrate. Therefore, in the embodiment of the present application, through the setting of the connecting line, the pixels in the backplane layer and the pixels in the photosensitive device layer are not in the same vertical area, thereby further improving the resolution of the X-ray flat panel detector, so that the X-ray flat panel detector can be well applied to high-resolution application scenarios, such as breast detection and industrial detection needs, and the setting of the connecting line can achieve compatibility between a larger backplane layer and a smaller photosensitive device layer, thereby reducing production costs.

[0047] The above description is only an overview of the technical solution of the embodiment of the present application. In order to more clearly understand the technical means of the embodiment of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the embodiment of the present application more obvious and easy to understand, the specific implementation method of the embodiment of the present application is listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the optional embodiments below. The accompanying drawings are only used for the purpose of illustrating the optional embodiments and are not to be considered as limitations of the embodiments of the present application. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0049] Figure 1 It is a schematic diagram of the structure of a traditional X-ray flat panel detector;

[0050] Figure 2 A schematic diagram of the structure of an X-ray flat panel detector according to an embodiment of the present application;

[0051] Figure 3 This is a schematic diagram of the structure of the first via hole in the backplane layer of an embodiment of the present application;

[0052] Figure 4 This is a schematic structural diagram of a second via hole in the photosensitive device layer of an embodiment of the present application;

[0053] Figure 5 Schematic diagram of the structure after the backplane layer and the photosensitive device layer are connected in the embodiment of the present application

[0054] Figure 6 This is a schematic diagram of the splicing structure of the photosensitive device layer of an embodiment of the present application;

[0055] Figure 7 This is a schematic diagram of a structure in which adjacent X-ray flat panel detectors are connected in a splicing manner in an embodiment of the present application;

[0056] Figure 8 Flow chart of a method for manufacturing an X-ray flat panel detector according to an embodiment of the present application.

[0057] The reference numerals are described as follows:

[0058] 1-substrate; 2-buffer layer; 3-gate; 4-gate insulating layer; 5-active layer; 6-source and drain layer; 7-passivation layer; 8-first electrode; 9-photodiode; 10-second electrode; 11-protective layer; 20-X-ray flat panel detector; 21-backplane layer; 22-thin film transistor; 23-connecting line; 25-flat layer; 26-photosensitive device layer; 27-first via hole; 28-second via hole. DETAILED DESCRIPTION

[0059] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0060] It will be understood by those skilled in the art that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that the term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0061] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0062] Figure 1 The structure of a conventional X-ray flat panel detector is shown in FIG. Figure 1 As shown, the main structure of the X-ray flat panel detector includes a substrate 1, a thin film transistor arranged on the substrate, a photodiode 9 arranged in parallel with the thin film transistor, and a scintillation layer (not shown in the figure) located above the photodiode 9. The thin film transistor includes a gate 3, a gate insulating layer 4, an active layer 5 and a source-drain electrode layer 6. The photodiode 9 includes a P-type semiconductor layer, an N-type semiconductor layer, and an intrinsic semiconductor layer between the P-type semiconductor layer and the N-type semiconductor layer. The first electrode 8 is connected to the drain of the thin film transistor, and a second electrode 10 is arranged on the photodiode 9. In addition, a buffer layer 2 is arranged between the substrate 1 and the thin film transistor, and a protective layer (not shown in the figure) is arranged on the second electrode 10.

[0063] The working principle of the X-ray flat panel detector is as follows: X-rays are modulated by the human body in its path, the modulated X-rays are converted into visible light by the scintillator layer, the visible light is absorbed by the photodiode and converted into charge carriers, the charge carriers are stored in the storage capacitor or the self-capacitance of the photodiode to form image charges, and the external scanning control circuit sequentially connects each row of thin film transistors, and outputs the image charges to the external data processing circuit in a row-by-row simultaneous readout manner. The image charges read out by each thin film transistor correspond to the dose of the incident X-rays, and the charge amount of each pixel can be determined by the external data processing circuit, and then the X-ray dose of each pixel can be determined.

[0064] However, the inventors of the present application have found that due to the poor uniformity of the film layer above the projection of the thin film transistor, the step difference is approximately As a result, when designing pixels, the effective photosensitivity area of ​​the photodiode cannot cover the thin-film transistor. That is, the thin-film transistor and the photodiode are currently placed in parallel. This design has a significant impact on the fill rate of the flat-panel detector, thereby affecting the resolution and detection performance of the X-ray flat-panel detector.

[0065] In addition, the inventors of the present application have discovered that if the size of the backplane layer (including film layers such as thin-film transistors) is relatively large and the detection surface area of ​​the X-ray flat-panel detector to be designed is relatively small, it is necessary to re-produce a smaller backplane layer to match the smaller photodiode, thereby meeting the requirements of the X-ray flat-panel detector for the detection surface. The existing technology cannot achieve compatibility between the backplane layer and photodiodes of different sizes, which will lead to an increase in production costs, and the production yield of the backplane layer will also be affected to a certain extent.

[0066] In order to solve the above technical problems, the embodiments of the present application provide a new X-ray flat panel detector and a method for manufacturing the same.

[0067] The X-ray flat panel detector provided in the embodiments of the present application is described in detail below with reference to the accompanying drawings.

[0068] In a first aspect, the present application discloses an X-ray flat panel detector 20, such as Figure 2 As shown, it includes: a substrate 1, a backplane layer 21, a wiring layer and a photosensitive device layer 26. The backplane layer 21 is located on the substrate 1 and includes a plurality of thin film transistors 22, each of which includes a source and drain layer 6. The wiring layer is located on the side of the backplane layer 21 away from the substrate 1, and includes a plurality of connecting wires 23 and a flat layer 25. The photosensitive device layer 26 is located on the side of the wiring layer away from the substrate 1, and includes a plurality of first electrodes 8, each of which is electrically connected to the source and drain layer 6 of a thin film transistor 22 through a connecting wire 23, and the orthographic projection of the photosensitive device layer 26 on the substrate 1 does not overlap with the orthographic projection of the backplane layer 21 on the substrate 1.

[0069] Since the photosensitive device layer 26 included in the X-ray flat panel detector 20 of the embodiment of the present application is located on the side of the wiring layer away from the substrate 1, and the wiring layer is located on the side of the backplane layer 21 away from the substrate 1, therefore, in the embodiment of the present application, the photosensitive device layer 26 and the backplane layer 21 are arranged in sequence in a direction perpendicular to the substrate 1. Compared with the method of placing the thin film transistor and the photosensitive device layer in parallel in the prior art, the design of the photosensitive device layer 26 in the embodiment of the present application is not affected by the thin film transistor 22, thereby improving the filling rate of the X-ray flat panel detector 20, and further improving the resolution and detection performance of the X-ray flat panel detector 20; in addition, since each first electrode 8 in the embodiment of the present application The source and drain electrode layer 6 of a thin film transistor 22 is electrically connected through a connecting line 23, and the orthographic projection of the photosensitive device layer 26 on the substrate 1 does not overlap with the orthographic projection of the back layer 21 on the substrate 1. Therefore, the embodiment of the present application can make the pixels in the back layer 21 and the pixels in the photosensitive device layer 26 not in the same vertical area through the setting of the connecting line 23, thereby further improving the resolution of the X-ray flat-panel detector 20, so that the X-ray flat-panel detector can be well used in high-resolution application scenarios, such as breast detection and industrial detection needs, and the setting of the connecting line can achieve compatibility between the larger back layer 21 and the smaller photosensitive device layer 26, thereby reducing production costs.

[0070] It should be noted that the thin film transistor 22 of the embodiment of the present application can be an amorphous silicon thin film transistor, an oxide thin film transistor, a low temperature polysilicon thin film transistor, or an organic transistor. In addition, the thin film transistor 22 of the embodiment of the present application can be a top gate thin film transistor, or a side gate or bottom gate thin film transistor.

[0071] Alternatively, if Figure 2As shown, the orthographic projection area of ​​the photosensitive device layer 26 on the substrate 1 in the embodiment of the present application is smaller than the orthographic projection area of ​​the back plate layer 21 on the substrate 1. Since the X-ray flat panel detector 20 of the present application is provided with a plurality of connecting wires 23, the thin film transistor 22 and the photosensitive device layer 26 can be electrically connected through the connecting wires 23, and the position of the orthographic projection area of ​​the photosensitive device layer 26 on the substrate 1 can be changed through the connecting wires 23. In the present embodiment, the orthographic projection area of ​​the photosensitive device layer 26 on the substrate 1 is smaller than the orthographic projection area of ​​the back plate layer 21 on the substrate 1. When the area to be detected is small, that is, when the design size required for the photosensitive device layer 26 is small, the embodiment of the present application can achieve matching connection between the back plate layer 21 of a larger size and the photosensitive device layer 26 of a smaller size through the setting of the connecting wires 23, and there is no need to separately make the back plate layer 21 of a smaller size, thereby reducing the production cost. Of course, in actual design, the orthographic projection area of ​​the photosensitive device layer 26 on the substrate 1 can also be larger than the orthographic projection area of ​​the back plate layer 21 on the substrate 1, so that it can be suitable for detection areas with different requirements.

[0072] In specific implementation, the X-ray flat-panel detector of the embodiment of the present application can be a breast flat-panel detector, which is generally used for the early diagnosis of breast cancer. In order to observe the microcalcification of the breast, the pixel size of the current detection component is 50 to 75 microns, and the pixel size of the backing layer currently connected to the detection component is 140 microns. The X-ray flat-panel detector provided in the embodiment of the present application can make the pixels in the backing layer 21 and the pixels in the photosensitive device layer 26 (i.e., the detection component) not in the same vertical area through the setting of the connecting line 23, thereby realizing the corresponding connection between the pixels of the larger backing layer and the pixels of the smaller photosensitive device layer 26, thereby realizing a high-resolution X-ray flat-panel detector.

[0073] Alternatively, if Figure 2 and Figure 3 As shown, the backplane layer 21 includes a passivation layer 7. The passivation layer 7 is located on the side of the thin film transistor 22 away from the substrate 1, covers the substrate 1, and is provided with a plurality of first via holes 27, and the first via holes 27 are used to expose the source or drain of each thin film transistor 22. Each connection line 23 is electrically connected to the source or drain of a thin film transistor 22 through the first via hole 27.

[0074] Figure 3 FIG. 2 shows the arrangement structure of the first via holes 27 penetrating the passivation layer 7 according to an embodiment of the present application. Figure 3 As shown, the backplane layer 21 includes a plurality of first spaces arranged in an array, each first space corresponds to a pixel of the backplane layer 21, and each first space includes a first via hole 27. Specifically, the first space has a first length a and a first width b, for example, the first length a and the first width b may both be 140 microns.

[0075] Alternatively, if Figure 2 and Figure 4 As shown, the routing layer in the embodiment of the present application includes a flat layer 25, which is located on the side of the photosensitive device layer 26 close to the substrate 1, covers the connecting wire 23, and the flat layer 25 is provided with a plurality of second vias 28 penetrating the flat layer 25 at a preset position; each first electrode 8 is electrically connected to a connecting wire 23 through the second via 28, and the preset position here is the position where the first electrode 8 needs to be connected to the connecting wire 23, and the position is specifically set according to actual needs. The setting of the flat layer 25 solves the film layer step difference at the position of the thin film transistor 22, and can make the film layer above the projection of the thin film transistor 22 better in uniformity, so that the photosensitive device layer 26 can be arranged in sequence with the back plate layer 21 in a direction perpendicular to the substrate 1, thereby improving the filling rate of the X-ray flat panel detector 20, and thus improving the resolution and detection performance of the X-ray flat panel detector 20.

[0076] Figure 4 FIG. 2 shows the arrangement structure of the second via holes 28 penetrating the planar layer 25 according to an embodiment of the present application. Figure 4 As shown, the photosensitive device layer 26 includes a plurality of second spaces arranged in an array, each second space corresponds to a pixel of the photosensitive device layer 26, and each second space includes a second via hole 28. Specifically, the second space has a second length c and a second width d. For example, in the embodiment of the present application, the second length c and the second width d may both be 70 microns. The second length c and the second width d may meet the requirements of breast detection and industrial detection for small pixels, but the area of ​​the second space may also be modified according to different requirements.

[0077] In an optional embodiment, the photosensitive device layer 26 is located in any of the four corner regions of the substrate 1, such as Figure 5 As shown, the photosensitive device layer 26 can be located in the upper right corner area of ​​the substrate 1. Of course, in actual design, the photosensitive device layer 26 can also be located in the lower right corner area of ​​the substrate 1, or in the upper left corner area of ​​the substrate 1, or in the lower left corner area of ​​the substrate 1. In another optional embodiment, the photosensitive device layer 26 can also be located in the middle area of ​​the substrate 1. The specific positional relationship between the photosensitive device layer 26 and the substrate 1 is set according to actual needs, and the embodiment of the present application does not limit this.

[0078] Alternatively, if Figure 2 As shown, the photosensitive device layer 26 includes a photodiode 9 and a second electrode 10. The photodiode 9 is located on the side of the first electrode 8 away from the substrate 1. The second electrode 10 is located on the side of the photodiode 9 away from the first electrode 8. Specifically, in the embodiment of the present application, the material of the first electrode 8 is metal molybdenum (Mo), and the thickness of the first electrode 8 in the direction perpendicular to the substrate 1 is The second electrode 10 can be made of the same material as the first electrode 8. The thickness of the second electrode 10 in the direction perpendicular to the substrate 1 is The photodiode 9 includes a P-type semiconductor layer, an N-type semiconductor layer, and an intrinsic semiconductor layer between the P-type semiconductor layer and the N-type semiconductor layer. The specific structure of the photodiode 9 is similar to that of the prior art and will not be described in detail here.

[0079] Alternatively, if Figure 2 As shown, in the embodiment of the present application, the first electrode 8 is a strip electrode, and the second electrode 10 is a planar electrode. Alternatively, in another embodiment, the first electrode 8 is a strip electrode, the second electrode 10 is a strip electrode, and the orthographic projection area of ​​the second electrode 10 on the substrate 1 covers the orthographic projection area of ​​the first electrode 8 on the substrate 1.

[0080] Alternatively, if Figure 2 As shown, in order to further protect the photosensitive device layer 26, the X-ray flat panel detector 20 may further include a protective layer 11, which is located on the side of the photosensitive device layer 26 away from the substrate 1 and covers the substrate 1. The orthographic projection area of ​​the protective layer 11 on the substrate 1 is larger than the orthographic projection area of ​​the photosensitive device layer 26 on the substrate 1.

[0081] Based on the same inventive concept, in the second aspect, the embodiment of the present application discloses an X-ray flat panel detector device, comprising: a plurality of array-arranged X-ray flat panel detectors 20 as in the first aspect. Adjacent X-ray flat panel detectors 20 are connected in a splicing manner, and the photosensitive device layer 26 is arranged near the splicing position. Since the X-ray flat panel detector device of the second aspect includes the X-ray flat panel detector 20 of the first aspect, the X-ray flat panel detector device of the second aspect has the same beneficial effects as the X-ray flat panel detector 20 of the first aspect. Therefore, the beneficial effects of the X-ray flat panel detector device of the second aspect will not be repeated.

[0082] In practical applications, in order to increase the detection area of ​​the X-ray flat panel detector 20 and at the same time achieve compatibility between the back plate layer and the photosensitive device layers 26 of different sizes, the photosensitive device layer 26 in the embodiment of the present application can be designed in a splicing manner, such as Figure 6 As shown, four photosensitive device layers 26 with smaller areas can be spliced ​​into a photosensitive device layer with a larger area.

[0083] Specifically, Figure 7 As shown, Figure 7A schematic diagram of adjacent X-ray flat panel detectors 20 connected by splicing is shown in the figure, and the photosensitive device layer 26 is arranged near the splicing position, that is, the photosensitive device layer 26 is located in the middle area of ​​the entire X-ray flat panel detector device, and the photosensitive device layer 26 is located in the four corner areas of a single X-ray flat panel detector 20. The X-ray flat panel detector device formed after splicing in the embodiment of the present application can not only further improve the resolution, but also will not increase the design pressure of the connecting line.

[0084] Based on the same inventive concept, in the third aspect, the embodiment of the present application discloses an X-ray imaging system including: the X-ray flat panel detector 20 of the first aspect. Alternatively, in another embodiment, the X-ray imaging system of the embodiment of the present application may include the X-ray flat panel detection device of the second aspect. Since the X-ray imaging system of the third aspect includes the X-ray flat panel detector 20 of the first aspect or the X-ray flat panel detection device of the second aspect, the X-ray imaging system of the third aspect has the same beneficial effects as the X-ray flat panel detector 20 of the first aspect or the X-ray flat panel detection device of the second aspect. Therefore, the beneficial effects of the X-ray imaging system of the third aspect will not be repeated.

[0085] Based on the same inventive concept, in a fourth aspect, an embodiment of the present application provides a method for manufacturing an X-ray flat panel detector 20. Figure 8 As shown, the method includes:

[0086] S101 : providing a substrate 1 , and manufacturing a backplane layer 21 on the substrate 1 through a patterning process, wherein the backplane layer 21 includes a thin film transistor 22 and a passivation layer 7 .

[0087] S102 : a plurality of connection lines 23 are formed on the side of the backplane layer 21 away from the substrate 1 by a patterning process, and each connection line 24 is electrically connected to a source or drain of a thin film transistor 22 through a first via hole 27 penetrating the passivation layer 7 .

[0088] S103 : forming a planar layer 25 on the side of the connection line 24 away from the substrate 1 through a patterning process.

[0089] S104: A photosensitive device layer 26 is formed on the side of the flat layer 25 away from the substrate 1 through a composition process, and the photosensitive device layer 26 includes a plurality of first electrodes 8, each of which is electrically connected to a connecting line 23 through a second via hole 28 penetrating the flat layer 25, and the orthographic projection of the photosensitive device layer 26 on the substrate 1 does not overlap with the orthographic projection of the back layer 21 on the substrate 1.

[0090] Since the X-ray flat panel detector 20 of the embodiment of the present application is made with a flat layer 25, the photosensitive device layer 26 and the back plate layer 21 can be arranged in sequence in a direction perpendicular to the substrate 1. Compared with the method of placing the thin film transistor and the photosensitive device layer in parallel in the prior art, the design of the photosensitive device layer 26 in the embodiment of the present application is not affected by the thin film transistor 22, thereby improving the filling rate of the X-ray flat panel detector 20, and further improving the resolution and detection performance of the X-ray flat panel detector 20; in addition, since each first electrode 8 included in the photosensitive device layer 26 in the embodiment of the present application is electrically connected to a connecting line 23 through a second via 28 penetrating the flat layer 25, the pixels in the back plate layer 21 and the pixels in the photosensitive device layer 26 are not in the same vertical area, thereby further improving the resolution of the X-ray flat panel detector 20, so that the X-ray flat panel detector can be well applied in high-resolution application scenarios, such as breast detection and industrial detection needs, and the production of the connecting line can achieve compatibility between the larger size back plate layer 21 and the smaller size photosensitive device layer 26, thereby reducing the production cost.

[0091] Optionally, a backplane layer 21 is manufactured on the substrate 1 by a patterning process, including:

[0092] A buffer layer 2 is formed on a substrate 1;

[0093] A gate electrode 3, a gate insulating layer 4, an active layer 5, a source electrode and a drain electrode are sequentially formed on the buffer layer 2 by a patterning process;

[0094] A passivation layer 7 is formed on the source and drain electrodes by a patterning process.

[0095] In a specific implementation, the passivation layer 7 is formed on the source and drain by a patterning process, including: coating an insulating film layer on the source and drain, and then patterning the insulating film layer to form a passivation layer 7, wherein the passivation layer 7 includes a plurality of first via holes 27 penetrating the passivation layer 7. In addition, the specific manufacturing methods of the buffer layer 2, the gate 3, the gate insulating layer 4, the active layer 5, the source and the drain in the embodiment of the present application are similar to those in the prior art, and will not be repeated here.

[0096] Optionally, a plurality of connection lines 23 are formed on the side of the backplane layer 21 away from the substrate 1 by a patterning process, including:

[0097] First, a metal layer is deposited on the passivation layer 7 , for example, a layer of metal aluminum (Al) or metal copper (Cu) is deposited on the passivation layer 7 .

[0098] Next, the metal layer is patterned to form a plurality of connection lines 23, wherein the orthographic projection area of ​​each connection line 23 on the substrate 1 covers the orthographic projection area of ​​a first via hole 27 on the substrate 1 and covers the orthographic projection area of ​​a second via hole 28 on the substrate 1. Specifically, Figure 2 As shown, the connection line 23 formed after patterning needs to extend to the position of the first via hole 27 and to the position of the second via hole 28, so that one end of the connection line 23 can be connected to the source or drain of the thin film transistor 22, and the other end can be connected to the first electrode 8.

[0099] Optionally, a photosensitive device layer 26 is formed on a side of the flat layer 25 away from the substrate 1 by a patterning process, including:

[0100] A plurality of first electrodes 8 are formed on the planar layer 25 by a patterning process, and each first electrode 8 is electrically connected to a connection line 23 through a second via hole 28 penetrating the planar layer 25;

[0101] A photodiode 9 is fabricated on the first electrode 8 by a patterning process;

[0102] The second electrode 10 is formed on the photodiode 9 by a patterning process.

[0103] In a specific implementation, the photodiode 9 is formed on the first electrode 8 by a patterning process, including: an N-type semiconductor layer, an intrinsic semiconductor layer and a P-type semiconductor layer are formed in sequence on the first electrode 8 by a patterning process. The specific manufacturing method of the first electrode 8, the photodiode 9 and the second electrode 10 in the embodiment of the present application is similar to the prior art, and will not be repeated here.

[0104] The beneficial effects obtained by applying the embodiments of the present application include:

[0105] 1. The X-ray flat panel detector 20 of the embodiment of the present application includes a photosensitive device layer 26 located on the side of the wiring layer away from the substrate 1, and the wiring layer is located on the side of the backplane layer 21 away from the substrate 1. Therefore, in the embodiment of the present application, the photosensitive device layer 26 and the backplane layer 21 are sequentially arranged in a direction perpendicular to the substrate 1. Compared with the method of placing the thin film transistor and the photosensitive device layer in parallel in the prior art, the design of the photosensitive device layer 26 in the embodiment of the present application is not affected by the thin film transistor 22, thereby improving the filling rate of the X-ray flat panel detector 20, and further improving the resolution and detection performance of the X-ray flat panel detector 20; in addition, since each first electrode 8 in the embodiment of the present application The source and drain electrode layer 6 of a thin film transistor 22 is electrically connected through a connecting line 23, and the orthographic projection of the photosensitive device layer 26 on the substrate 1 does not overlap with the orthographic projection of the back layer 21 on the substrate 1. Therefore, the embodiment of the present application can make the pixels in the back layer 21 and the pixels in the photosensitive device layer 26 not in the same vertical area through the setting of the connecting line 23, thereby further improving the resolution of the X-ray flat-panel detector 20, so that the X-ray flat-panel detector can be well used in high-resolution application scenarios, such as breast detection and industrial detection needs, and the setting of the connecting line can achieve compatibility between the larger back layer 21 and the smaller photosensitive device layer 26, thereby reducing production costs.

[0106] 2. The X-ray flat panel detector device of the embodiment of the present application includes a plurality of X-ray flat panel detectors 20 provided by the embodiment of the present application. Adjacent X-ray flat panel detectors 20 are connected by splicing, and the photosensitive device layer 26 is arranged near the splicing position. This arrangement can increase the detection area of ​​the X-ray flat panel detector, further improve the resolution, and at the same time achieve compatibility between the back plate layer and the photosensitive device layers 26 of different sizes.

[0107] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0108] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0109] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0110] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. An X-ray flat panel detector, characterized in that: include: substrate; A backplane layer, located on the substrate, comprising a plurality of thin film transistors, each of which comprises a source and drain electrode layer; A wiring layer, located on a side of the backplane layer away from the substrate, including a plurality of connecting lines; A photosensitive device layer, located on a side of the wiring layer away from the substrate, comprising a plurality of first electrodes and second electrodes, each of the first electrodes being electrically connected to a source-drain layer of the thin film transistor via a connecting wire, and an orthographic projection of the photosensitive device layer on the substrate does not overlap with an orthographic projection of the backplane layer on the substrate; The pixels in the backplane layer and the pixels in the photosensitive device layer of the same pixel are not in the same vertical region, and the orthogonal projection of each pixel in the backplane layer on the substrate does not overlap with the orthogonal projection of the corresponding pixel in the photosensitive device layer on the substrate; The backplane layer comprises a plurality of first spaces arranged in an array, each of which corresponds to a pixel of the backplane layer; the photosensitive device layer comprises a plurality of second spaces arranged in an array, each of which corresponds to a pixel of the photosensitive device layer; at least one group of first spaces and second spaces connected by the same connecting line have non-overlapping orthographic projections on the substrate; The first electrode is a strip electrode, and the second electrode is a planar electrode.

2. The X-ray flat panel detector according to claim 1, characterized in that: The orthographic projection area of ​​the photosensitive device layer on the substrate is smaller than the orthographic projection area of ​​the backplane layer on the substrate.

3. The X-ray flat panel detector according to claim 2, characterized in that: The backplane layer includes a passivation layer; The passivation layer is located on a side of the thin film transistor away from the substrate, covers the substrate, and is provided with a plurality of first via holes to expose a source or a drain of each thin film transistor; Each of the connection lines is electrically connected to a source or a drain of the thin film transistor through the first via hole.

4. The X-ray flat panel detector according to claim 2, characterized in that: The routing layer includes a flat layer, which is located on a side of the photosensitive device layer close to the substrate, covers the connecting wires, and is provided with a plurality of second via holes penetrating the flat layer at preset positions; Each of the first electrodes is electrically connected to a connecting line through the second via hole.

5. The X-ray flat panel detector according to claim 2, characterized in that: The photosensitive device layer includes a photodiode; The photodiode is located on a side of the first electrode away from the substrate; The second electrode is located at a side of the photodiode away from the first electrode.

6. The X-ray flat panel detector according to claim 5, characterized in that: The orthographic projection area of ​​the second electrode on the substrate covers the orthographic projection area of ​​the first electrode on the substrate.

7. The X-ray flat panel detector according to any one of claims 1 to 6, characterized in that: It also includes a protective layer, which is located on a side of the photosensitive device layer away from the substrate and covers the substrate; The orthographic projection area of ​​the protective layer on the substrate is larger than the orthographic projection area of ​​the photosensitive device layer on the substrate.

8. An X-ray flat panel detection device, characterized in that: include: A plurality of X-ray flat panel detectors as claimed in any one of claims 1 to 7 arranged in an array; The adjacent X-ray flat panel detectors are connected in a splicing manner, and the photosensitive device layer is arranged near the splicing position.

9. An X-ray imaging system, characterized in that: include: An X-ray flat panel detector as claimed in any one of claims 1 to 7; or, comprising an X-ray flat panel detector device as claimed in claim 8.

10. A method for manufacturing an X-ray flat panel detector, characterized in that: include: Providing a substrate, and manufacturing a backplane layer on the substrate by a patterning process, wherein the backplane layer includes a thin film transistor and a passivation layer; A plurality of connection lines are formed on the side of the backplane layer away from the substrate by a patterning process, each of the connection lines being electrically connected to a source or drain of the thin film transistor through a first via hole penetrating the passivation layer; Making a flat layer on the side of the connecting line away from the substrate by a patterning process; A photosensitive device layer is manufactured on the side of the flat layer away from the substrate by a patterning process, wherein the photosensitive device layer comprises a plurality of first electrodes and a second electrode, each of the first electrodes is electrically connected to a connecting wire through a second via hole penetrating the flat layer, and an orthographic projection of the photosensitive device layer on the substrate does not overlap with an orthographic projection of the backplane layer on the substrate; Wherein, the pixels in the backplane layer and the pixels in the photosensitive device layer of the same pixel are not in the same vertical region, and the orthogonal projection of each pixel in the backplane layer on the substrate does not overlap with the orthogonal projection of the corresponding pixel in the photosensitive device layer on the substrate; The backplane layer comprises a plurality of first spaces arranged in an array, each of which corresponds to a pixel of the backplane layer; the photosensitive device layer comprises a plurality of second spaces arranged in an array, each of which corresponds to a pixel of the photosensitive device layer; at least one group of first spaces and second spaces connected by the same connecting line have non-overlapping orthographic projections on the substrate; The first electrode is a strip electrode, and the second electrode is a planar electrode.

11. The method for manufacturing an X-ray flat panel detector according to claim 10, characterized in that: The method of manufacturing a backplane layer on the substrate by a patterning process comprises: forming a buffer layer on the substrate; A gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode are sequentially formed on the buffer layer by a patterning process; A passivation layer is formed on the source electrode and the drain electrode by a patterning process.

12. The method for manufacturing an X-ray flat panel detector according to claim 11, characterized in that: The method of making a plurality of connection lines on the side of the backplane layer away from the substrate by patterning process includes: depositing a metal layer on the passivation layer; The metal layer is patterned to form a plurality of connection lines, wherein the orthographic projection area of ​​each connection line on the substrate covers the orthographic projection area of ​​the first via hole on the substrate and covers the orthographic projection area of ​​the second via hole on the substrate.

13. The method for manufacturing an X-ray flat panel detector according to claim 10, characterized in that: The method of manufacturing a photosensitive device layer on a side of the flat layer away from the substrate by a patterning process comprises: A plurality of first electrodes are formed on the planar layer by a patterning process, each of the first electrodes being electrically connected to a connecting line through a second via hole penetrating the planar layer; Fabricating a photodiode on the first electrode by a patterning process; A second electrode is formed on the photodiode by a patterning process.

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