Substrate holding body, substrate conveying device, and method for manufacturing substrate holding body

Abstract

The present invention relates to a substrate holding body, a substrate conveying device, and a manufacturing method of a substrate holding body. The temperature of a substrate holding body is appropriately adjusted in a substrate conveying device. A substrate holding body is provided in a device that conveys a substrate, for holding the substrate, wherein the substrate holding body has: a main body portion made of ceramic; and a heat pipe that is formed inside the main body portion, and has a flow path of a working fluid.

Description

Technical Field

[0001] This disclosure relates to a substrate holder, a substrate transport apparatus, and a method for manufacturing a substrate holder. Background Technology

[0002] Patent Document 1 discloses a conveying mechanism for feeding and unloading wafers relative to a processing apparatus that performs heat treatment on wafers within a processing container. The conveying mechanism includes arms with multiple arms capable of bending and rotating, and forks connected to the tips of the arms and holding the wafers. The forks are made of ceramic material.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-187910 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The present invention discloses a technique for appropriately adjusting the temperature of a substrate holder in a substrate transport device.

[0008] Solution for solving the problem

[0009] One technical solution disclosed herein is a substrate holder disposed in a substrate conveying device for holding the substrate, wherein the substrate holder has: a ceramic main body; and a heat pipe formed inside the main body, having a flow path for working fluid.

[0010] The effects of the invention

[0011] According to this disclosure, the temperature of the substrate holder can be appropriately adjusted in the substrate transport device. Attached Figure Description

[0012] Figure 1 It is a top view showing the general structure of the wafer processing system.

[0013] Figure 2 It is a schematic three-dimensional diagram showing the structure of a wafer transport device.

[0014] Figure 3 It is a rough cross-sectional view showing the internal structure of the fork.

[0015] Figure 4 It is a rough longitudinal sectional view showing the internal structure of the fork.

[0016] Figure 5 This is an explanatory diagram showing the method of manufacturing a fork.

[0017] Figure 6This is an explanatory diagram showing the method of forming a heat pipe in the manufacturing process of a fork.

[0018] Figure 7 This is an explanatory diagram illustrating a method for forming a heat pipe in other embodiments.

[0019] Figure 8 This is an explanatory diagram illustrating a method for forming a heat pipe in other embodiments.

[0020] Figure 9 This is an explanatory diagram illustrating a method for forming a heat pipe in other embodiments. Detailed Implementation

[0021] In semiconductor device manufacturing processes, various processes such as film deposition and etching are performed on semiconductor wafers (substrates; hereinafter referred to as "wafers") under reduced pressure (vacuum) atmospheres. For example, in cases where multiple types of processing are performed using a monolithic processing module, a so-called cluster-type wafer processing system is used, in which multiple processing modules are connected around a transfer module, which includes a transport device, by means of gate valves. Thus, wafers are sequentially transported towards each processing module using the transport device within the transfer module, and the desired processing is performed on the wafers sequentially.

[0022] In the case of multiple processes performed in a wafer processing system, the processing temperatures of each process may differ. For example, film deposition is a high-temperature process, while etching is a low-temperature process. Thus, in the transport mechanism (transport device) disclosed in Patent Document 1, for example, the fork (fork) supporting the wafer that has undergone either the high-temperature or low-temperature process is made of a ceramic material with heat resistance corresponding to the high-temperature process, so as to be able to support the wafer.

[0023] However, when processing at different temperatures, it becomes difficult to transport wafers at an appropriate temperature using the transport device, leading to various adverse effects. For example, when wafers are fed into or out of a high-temperature processing module (high-temperature chamber), the temperature of the wafer holder in the transport device rises due to the temperature of the wafer and the radiant heat from the processing module. In this state, when wafers are fed into or out of a low-temperature processing module (low-temperature chamber), the wafer before low-temperature processing is fed into the low-temperature chamber under excessive heating, potentially causing the process rate to deviate from the desired rate. Furthermore, the temperature difference between the wafer before and after low-temperature processing can potentially cause damage or breakage to the wafer.

[0024] Therefore, there is room for improvement in the existing conveying devices, and it is desirable to properly regulate the temperature of the forks of the conveying device.

[0025] The present disclosure relates to the technique of appropriately adjusting the temperature of the substrate holder in a substrate transport apparatus. Hereinafter, a wafer transport apparatus as a substrate transport apparatus, a fork as a substrate holder, and a method for manufacturing the fork will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0026] <Structure of Wafer Processing System>

[0027] First, the structure of the wafer processing system equipped with a wafer transport device in this embodiment will be described. Figure 1 This is a schematic top view showing the structure of the wafer processing system. In this embodiment, the wafer processing system 1 is described as including various processing modules for performing film deposition and etching processes on the wafer W, which serves as a substrate. However, the structure of the wafer processing system 1 disclosed herein is not limited to this and can be arbitrarily selected.

[0028] like Figure 1 As shown, the wafer processing system 1 has a structure in which the atmospheric pressure section 10 and the depressurization section 11 are connected as a single unit by means of loading interlock modules 20a and 20b. In the atmospheric pressure section 10, the front-opening wafer transfer box 31, which can accommodate multiple wafers W, is loaded and unloaded under an atmospheric pressure atmosphere (atmospheric atmosphere), and the wafers W are transported relative to the loading interlock modules 20a and 20b. In the depressurization section 11, the wafers W are processed as desired under a depressurization atmosphere (vacuum atmosphere), and the wafers W are transported relative to the loading interlock modules 20a and 20b.

[0029] The loading interlock module 20a temporarily holds the wafer W so as to transfer the wafer W from the loading module 30 (described later) of the atmospheric pressure section 10 to the transfer module 40 (described later) of the depressurization section 11.

[0030] The loading interlock module 20a is connected to the loading module 30 (described later) via gate valve 21a. Furthermore, the loading interlock module 20a is connected to the transmission module 40 (described later) via gate valve 22a. These gate valves 21a and 22a ensure both airtightness and interconnectivity between the loading interlock module 20a, the loading module 30, and the transmission module 40.

[0031] The loading interlock module 20a is connected to a gas supply section (not shown) for supplying gas and a gas exhaust section (not shown) for discharging gas. These gas supply and exhaust sections enable the internal structure of the loading interlock module 20a to switch between atmospheric and depressurized atmospheres. That is, the loading interlock module 20a is configured to appropriately transfer the wafer W between the atmospheric pressure section 10 (atmospheric pressure) and the depressurized pressure section 11 (depressurized pressure).

[0032] Furthermore, the loading interlock module 20b has the same structure as the loading interlock module 20a. That is, the loading interlock module 20b has a gate valve 21b on the loading module 30 side and a gate valve 22b on the transmission module 40 side.

[0033] Furthermore, the number and configuration of the interlocking modules 20a and 20b are not limited to this embodiment and can be set arbitrarily.

[0034] The atmospheric pressure section 10 includes a loading module 30 comprising a wafer transport device (not shown) and a loading port 32 for holding a front-opening wafer transport box 31 capable of holding multiple wafers W. The loading module 30 is also referred to as an EFEM (Epuipment Front End Module).

[0035] The loading module 30 has a rectangular housing that is maintained at atmospheric pressure. Multiple loading ports 32, for example three, are arranged on one long side of the housing. Loading interlock modules 20a and 20b are arranged on the other long side of the housing. Furthermore, the loading module 30 has a wafer transport device (not shown) that can move along its length inside the housing. The wafer transport device can transport wafers W between the loading interlock modules 20a and 20b and the front-opening wafer transfer cassette 31 placed at the loading ports 32.

[0036] Furthermore, the number and configuration of the loading ports 32 are not limited to this embodiment and can be designed arbitrarily. Alternatively, the atmospheric pressure section 10 may be provided with a processing module that performs desired processing on the wafer W under atmospheric pressure, such as a module that adjusts the orientation of the wafer W in the horizontal direction.

[0037] The front-opening wafer transfer box 31 houses multiple wafers W, for example, 25 wafers in a batch, stacked at equal intervals in multiple layers. Furthermore, the interior of the front-opening wafer transfer box 31, which is placed in the loading port 32, is filled with, for example, atmosphere or nitrogen and is sealed.

[0038] The decompression unit 11 includes: a transfer module 40 for conveying wafer W to various processing modules, a film deposition module 41 as a processing apparatus for film deposition on wafer W, and an etching module 42 as a processing apparatus for etching wafer W. The interiors of the transfer module 40, film deposition module 41, and etching module 42 are maintained under reduced pressure. Multiple film deposition modules 41 and etching modules 42 are provided relative to the transfer module 40, for example, two of each. The transfer module 40 is also referred to as a VTM (Vacuum Transfer Module).

[0039] Furthermore, the film-forming module 41 and the etching module 42 are connected to the transfer module 40 via gate valves 43 and 44, respectively. These gate valves 43 and 44 ensure both airtightness and interconnectivity between the transfer module 40 and the film-forming module 41 and the etching module 42.

[0040] Furthermore, the number, configuration, and types of processing modules provided in the transmission module 40 are not limited to this embodiment and can be arbitrarily set.

[0041] The interior of the transfer module 40 is constructed of a rectangular housing, and as described above, it is connected to the loading interlock modules 20a and 20b via gate valves 22a and 22b. The transfer module 40 sequentially transports the wafer W fed into the loading interlock module 20a to a film deposition module 41 and an etching module 42, and after film deposition and etching processes, it is discharged to the atmospheric pressure section 10 via the loading interlock module 20b.

[0042] Inside the transfer module 40 is a wafer transport device 50 for transporting wafers W. The detailed structure of the wafer transport device 50 will be described below.

[0043] The wafer processing system 1 described above includes a control unit 60. The control unit 60 is, for example, a computer including a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. Alternatively, the program can be stored on a storage medium H that can be read by a computer and loaded from that storage medium H into the control unit 60.

[0044] <Wafer Processing System>

[0045] The wafer processing system 1 of this embodiment is configured as described above. Next, the wafer processing of the wafer processing system 1 will be described.

[0046] First, the front-opening wafer transfer box 31, which contains multiple wafers W, is placed in the loading port 32.

[0047] Next, using a wafer transport device (not shown), wafer W is retrieved from the front-opening wafer transport box 31 and fed into the loading interlock module 20a. While feeding wafer W into the loading interlock module 20a, gate valve 21a is closed to seal the loading interlock module 20a and depressurize it. Then, gate valve 22a is opened to connect the interior of the loading interlock module 20a with the interior of the transport module 40.

[0048] Next, when the loading interlock module 20a and the transfer module 40 are connected, the wafer W is taken out by the wafer transport device 50 and sent from the loading interlock module 20a to the transfer module 40.

[0049] Next, gate valve 43 is opened, and wafer W is fed into film deposition module 41 using wafer transport device 50. Then, gate valve 43 is closed, and film deposition is performed on wafer W. At the end of the film deposition process, gate valve 43 is opened, and wafer W is discharged from film deposition module 41 using wafer transport device 50. Then, gate valve 43 is closed.

[0050] Next, gate valve 44 is opened, and wafer W is fed into etching module 42 using wafer transport device 50. Then, gate valve 44 is closed, and wafer W is etched. At the end of the etching process, gate valve 44 is opened, and wafer W is removed from etching module 42 using wafer transport device 50. Then, gate valve 44 is closed.

[0051] Next, gate valve 22b is opened, and wafer W is fed into loading interlock module 20b using wafer transport device 50. While wafer W is being fed into loading interlock module 20b, gate valve 22b is closed, sealing loading interlock module 20b and opening it to the atmosphere.

[0052] Next, using a wafer transport device (not shown), the two wafers W are returned and housed in the front-opening wafer transport box 31. Thus, the series of wafer processing steps of the wafer processing system 1 is completed.

[0053] <Structure of Wafer Delivery Device>

[0054] Next, the structure of the wafer transport device 50 described above will be explained. Figure 2 This is a schematic perspective view showing the structure of the wafer transport device 50.

[0055] like Figure 2 As shown, the wafer transport device 50 is a multi-joint robot with multiple, for example, three arms 101, 102, and 103. Arms 101, 102, and 103 are supported on the transport base 104.

[0056] The base of the first arm 101 is connected to the conveying base 104, and the top end is connected to the second arm 102. The base of the second arm 102 is connected to the first arm 101, and the top end is connected to the third arm 103. The base of the third arm 103 is connected to the second arm 102.

[0057] A first joint 111 is provided between the base of the first arm 101 and the conveying base 104. A second joint 112 is provided between the base of the second arm 102 and the tip of the first arm 101. A third joint 113 is provided between the base of the third arm 103 and the tip of the second arm 102. A drive mechanism (not shown) is provided inside each of these joints 111, 112, and 113. Using this drive mechanism, each arm 101, 102, and 103 is configured to rotate freely (or return freely) around joints 111, 112, and 113, respectively.

[0058] Hollow sections with atmospheric pressure are formed inside each of the first arm 101 and the second arm 102. Each hollow section houses a temperature regulating mechanism (not shown) for adjusting the first arm 101 and the second arm 102 to a desired temperature. Known mechanisms can be arbitrarily selected and used for temperature regulation; for example, temperature regulation can be performed by supplying dry air to the hollow section.

[0059] In addition to housing the temperature control mechanism, each hollow section also houses various other components. For example, it houses cables (not shown) used to transmit power to the drive mechanisms of the aforementioned joints 111, 112, and 113.

[0060] The third arm 103 has a fork 120 (end effector) serving as a substrate holding part and a handle 121 supporting the fork 120. The fork 120 is provided at the top end of the third arm 103 for holding the wafer W. The handle 121 is provided at the base end of the third arm 103 and is mounted on the third joint 113.

[0061] Furthermore, in this embodiment, the fork 120 is configured to move freely up and down in the vertical direction using the drive mechanism of the conveying base 104, and is also configured to move freely in the horizontal direction using the drive mechanisms of the joints 111, 112, and 113. That is, in this embodiment, the conveying base 104 and the joints 111, 112, and 113 constitute the moving mechanism of this disclosure.

[0062] <Structure of a fork>

[0063] Next, the structure of fork 120 will be explained. Figure 3 This is a schematic cross-sectional view showing the internal structure of fork 120. Figure 4 This is a schematic longitudinal sectional view showing the internal structure of fork 120.

[0064] like Figure 3 and Figure 4 As shown, the fork 120 has a main body 130 and a heat pipe 140 formed inside the main body 130.

[0065] like Figure 3 As shown, the main body 130 is forked, with two branches 131 and a support 132 supporting the two branches 131 integrated into one piece. The main body 130 is made of ceramic material. The main body 130 is relatively thin, with a thickness of, for example, 2 mm to 3 mm. In addition, multiple suction cups (not shown) are provided on the upper surface of the main body 130, and the fork 120 uses these multiple suction cups to hold and hold the wafer W.

[0066] Multiple heat pipes 140, for example two, are formed inside the main body 130. The two heat pipes 140 are formed inside the two branch portions 131, and also inside the support portion 132. Each heat pipe 140 extends from the top end of the main body 130 to the base end, that is, from the top end of the branch portion 131 to the base end of the support portion 132.

[0067] Furthermore, the width, number, and arrangement shape of the heat pipes 140 are not limited to this embodiment and can be arbitrarily set. However, when the heat pipes 140 are provided throughout the fork 120, the temperature of the entire fork 120 can be uniformly regulated.

[0068] like Figure 3 and Figure 4 As shown, the heat pipe 140 has: a flow path 141 for the working fluid, a core 142 (capillary structure), and a sealing member 143 for sealing the open end of the flow path 141.

[0069] The flow path 141 is hollow inside the main body 130. As described above, the flow path 141 extends from the top end of the branch 131 to the base end of the support 132.

[0070] The core 142 is formed inside the flow path 141 (inner side view), extending from the top of the branch 131 to the base of the support 132 in the same manner as the flow path 141. The core 142 is made of the same type of ceramic material as the main body 130. In this embodiment, the porosity of the core 142 is higher than that of the main body 130, thereby enabling the core 142 to function as a capillary structure. However, if the porosity of the main body 130 is very high, the porosity of the core 142 can be made the same as that of the main body 130.

[0071] The sealing member 143 is provided at both the open end at the top end and the open end at the base end of the flow path 141. The sealing member 143 is not limited as long as it can seal the working fluid into the interior of the flow path 141, for example, a ceramic component can be used.

[0072] Here, as described above, in the wafer processing system 1 of this embodiment, after the film deposition module 41 performs film deposition on the wafer W, the etching module 42 performs etching on the wafer W. In this case, when the wafer W is fed into or out of the film deposition module 41, which performs film deposition as a high-temperature process, the temperature of the fork 120 rises. In this state, when the wafer W is fed into or out of the etching module 42, which performs etching as a low-temperature process, the wafer W before etching is fed into the etching module 42 in an overheated state, so the etching rate may deviate from the desired rate. Furthermore, a temperature difference exists between the wafer W before etching and the wafer W after etching, so damage or cracking of the wafer W may occur.

[0073] In this embodiment, a temperature regulating mechanism is provided on the first arm 101 and the second arm 102. This mechanism regulates the temperature of the first arm 101 and the second arm 102, thereby also regulating the temperature of the handle 121. Furthermore, a heat pipe 140 is formed inside the fork 120, allowing heat exchange between the fork 120 and the handle 121. This enables both heating and cooling of the fork 120. Consequently, the temperature of the fork 120 can be brought close to the temperature of the handle 121, allowing the fork 120 to be controlled and adjusted to the desired temperature. In particular, the heat pipe 140 has high heat transfer performance; therefore, by adjusting the base to the desired temperature, the temperature can be adjusted all the way to the top. Moreover, in this case, there is no need to provide an external coolant circulation system, and the entire fork 120 can be controlled and adjusted to the target temperature.

[0074] Furthermore, since the heat pipe 140 extends from the top of the main body 130 to the base of the support 132, heat from the temperature regulating mechanism is easily conducted to the base of the heat pipe 140, enabling more efficient heat exchange between the fork 120 and the handle 121. Consequently, the temperature of the fork 120 can be brought closer to the temperature of the handle 121, allowing for more appropriate temperature regulation of the fork 120.

[0075] Therefore, since the temperature of the fork 120 can be adjusted in this way, even when multiple processes with different processing temperatures are performed in a single wafer processing system 1, the temperature of the fork 120 can be adjusted to appropriately regulate the temperature of the wafer W held at the fork 120. As a result, each process for the wafer W can be performed appropriately. Furthermore, damage to the wafer W caused by temperature differences can be suppressed.

[0076] Furthermore, in this embodiment, temperature regulating mechanisms are provided on the first arm 101 and the second arm 102, but alternatively, a temperature regulating mechanism may also be provided on the handle 121. Regardless of the specific configuration, by placing the base of the heat pipe 140 close to the temperature regulating mechanism (i.e., the heat source), the fork 120 can be adjusted to an appropriate temperature. Additionally, conventionally, proposals have included providing a temperature regulating mechanism, such as a heat sink, only on the handle. However, when only located on the handle, the temperature regulating effect of the fork is limited. As in this embodiment, by providing the heat pipe 140 inside the main body 130, the temperature of the fork 120 can be appropriately regulated.

[0077] Furthermore, the main body 130 of the fork 120 is made of ceramic material, so it can withstand both high-temperature and low-temperature processing, allowing the fork 120 to cope with a wide temperature range. Moreover, ceramic material generates less dust, which can also suppress particulate pollution to the surrounding environment.

[0078] <Fork Manufacturing Method>

[0079] Next, the manufacturing method of fork 120 will be explained. Figure 5 This is an explanatory diagram showing the method of manufacturing fork 120. Figure 6 This is an explanatory diagram illustrating the method of forming the heat pipe 140 in the manufacturing process of the fork 120.

[0080] [Process S1: Substrate forming process]

[0081] First, in step S1, a ceramic substrate 220 is formed with a support material 210 inside the ceramic material 200. The method of forming the ceramic substrate 220 is arbitrary. In this embodiment, for example, the ceramic substrate 220 is formed by stacking the ceramic material 200 and the support material 210 using ceramic 3D printing technology.

[0082] For ceramic material 200, a fluid slurry formed by dispersing ceramic powder in a liquid as a medium is used. Furthermore, ceramic material 200 includes a main body ceramic material 201 that functions as the main body 130 and a core ceramic material 202 that functions as the core 142. The material of the support material 210 is arbitrary, but a material that can be removed in step S4 described later is used.

[0083] For the forming of the ceramic substrate 220, a known processing apparatus is used. For example, the processing apparatus includes an inkjet head capable of ejecting ceramic material 200 and support material 210. Then, these ceramic materials 200 and support materials 210 are layered one by one to form a three-dimensional structure.

[0084] In process S1, firstly, as Figure 5 As shown in (a), the laminated main body is made of ceramic material 201.

[0085] Next, as Figure 5 As shown in (b), a ceramic material 201 for the main body, a ceramic material 202 for the core, and a support material 210 are further laminated. The support material 210 is removed in step S4 described later, thereby forming the flow path 141 of the heat pipe 140. Therefore, the support material 210 is formed on the inner side of the ceramic material 201 in the side view at the position for forming the flow path 141.

[0086] The core ceramic material 202 functions as the core 142, and is therefore formed on the inner side of the support material 210 in a side view. Furthermore, the core ceramic material 202 has a higher porosity than the main body ceramic material 201. For example, by adjusting the ratio of the slurry used for the main body ceramic material 201 and the core ceramic material 202, the porosities of the ceramic materials 201 and 202 can be adjusted separately. Thus, the core ceramic material 202 has a higher porosity than the main body ceramic material 201, and therefore, the core 142 can function as a capillary structure. However, as described above, even when the porosity of the main body ceramic material 201 is very high, the porosity of the core ceramic material 202 can be made the same as that of the main body ceramic material 201.

[0087] Next, as Figure 5 (c) and Figure 6 As shown in (a), the ceramic material 201 for the main body is further laminated. Thus, a ceramic substrate 220 is formed. That is, the ceramic substrate 220 has a structure that includes a support material 210 and a core ceramic material 202 inside the ceramic material 201 for the main body.

[0088] Here, the thickness of the fork 120 (main body 130) is, for example, as thin as 2 mm to 3 mm. Such a thin ceramic sheet is difficult to cut into its interior after firing to form a fine structure, and in conventional methods, it is difficult to form a heat pipe for temperature regulation inside the fork. In other words, when attempting to form a heat pipe inside the fork, the fork thickness is relatively large.

[0089] In this embodiment, during process S1, a fine structure of support material 210 and core ceramic material 202 can be formed inside the ceramic material 201 of the main body. That is, a fine structure for constituting the heat pipe 140 can be formed inside the main body 130 while maintaining a relatively thin thickness of the main body 130 of the fork 120.

[0090] Furthermore, while embedding metal heat pipes and refrigerant piping into a ceramic sheet is also considered, compared to this, when a fine structure is formed in the main body 130 made of ceramic material as in this embodiment, the reduction in the mechanical strength of the ceramic material can be suppressed. Moreover, when metal heat pipes and refrigerant piping are embedded in a ceramic sheet, cracks may occur due to the difference in thermal expansion between the ceramic and metal, dust generation may occur, or temperature control may be reduced due to thermal resistance at the joints; however, such occurrences can be suppressed in this embodiment.

[0091] Furthermore, the method for forming the ceramic substrate 220 in step S1 is not limited to the above-described embodiment. For example, the ceramic substrate 220 may be formed by firing a polymer that is polymerized while forming a three-dimensional shape in a liquid. Alternatively, the ceramic substrate 220 may be formed by inkjet printing a ceramic slurry.

[0092] [Process S2: Firing Process]

[0093] Next, in step S2, the ceramic substrate 220 is fired. At this time, the ceramic substrate 220 is fired under humidity and firing conditions corresponding to the slurry of the ceramic material 201. A known heating device is used for firing the ceramic substrate 220.

[0094] [Process S3: External Finishing Process]

[0095] Next, in step S3, the outer shape of the ceramic substrate 220 is cut and the surface is ground for finishing. A known grinding apparatus is used for finishing the outer shape of the ceramic substrate 220. Thus, the ceramic substrate 220 is formed.

[0096] [Process S4: Main Body Forming Process (Flow Path Forming Process)]

[0097] Next, in process S4, the main body 130 is formed. For example... Figure 5 (d) and Figure 6 As shown in (b), the support material 210 is removed from the ceramic substrate 220. The method for removing the support material 210 can be chosen arbitrarily. For example, if the support material 210 is resin, it can be removed by heating the support material 210 under a reduced pressure atmosphere to sublimate it. Alternatively, an acidic gas can be supplied to dissolve the support material 210. Thus, a flow path 141 is formed inside the ceramic material 201 in the main body, thereby forming the main body 130.

[0098] [Process S5: Working fluid sealing process]

[0099] Next, in step S5, working fluid is supplied to and sealed into the interior of flow path 141. The method of supplying this working fluid can be arbitrarily selected.

[0100] [Process S6: Sealing Process]

[0101] Next, in step S6, a sealing member 143 is provided at the open end of the flow path 141 to seal the flow path 141. For example, the sealing member 143, which is a ceramic component, is installed at the open end by means of brazing. In this way, the heat pipe 140 is formed inside the main body 130, and the fork 120 is manufactured.

[0102] According to this embodiment, even if the main body 130 of the fork 120 is made of a thin ceramic material, a heat pipe 140 can be formed inside the main body 130.

[0103] Previously, as disclosed in Japanese Patent No. 4057158, there existed a technique of installing a heat pipe inside a metal fork (conveying arm) as a cooling flow path containing refrigerant. In this technique, the fork is made of metal, making it easy to machine, and there is no difference in thermal expansion between the fork and the heat pipe. Therefore, even if the fork is relatively thin, a heat pipe can be installed inside it.

[0104] However, metal forks have limitations in terms of operating temperature range. To address this, in this embodiment, the main body 130 of the fork 120 is made of ceramic material, which can withstand both high-temperature and low-temperature treatments, allowing the fork 120 to be used over a wider temperature range. Furthermore, the fork disclosed in Japanese Patent No. 4057158 was originally intended for use under normal atmospheric pressure and was not designed for a wider temperature range under reduced pressure atmospheres, as is the case in this embodiment.

[0105] On the other hand, as in this embodiment, when the main body 130 uses a relatively thin ceramic material, as described above, in conventional methods it is difficult to form a fine structure by cutting the interior after firing the ceramic sheet, making it difficult to form a heat pipe composed of such a fine structure. Furthermore, when a metal heat pipe is embedded in a ceramic sheet, a difference in thermal expansion between the ceramic and the metal occurs, leading to cracking, dust generation, etc. In this respect, in this embodiment, even if the main body 130 of the fork 120 is a relatively thin ceramic material, a heat pipe 140 can be formed by performing the aforementioned steps S1 to S6 to create a fine structure inside the main body 130.

[0106] <Other Implementation Methods>

[0107] Here, in the heat pipe 140, the inner surface of the flow path 141 is made of ceramic material, which forms the main body 130. Since ceramic material is porous, the sealed working fluid may permeate to the outside of the flow path 141, i.e., the interior of the main body 130. For example, if the porosity of the main body 130 is high, the working fluid may permeate into the interior of the main body 130, thus reducing the function of the heat pipe 140. Therefore, the following three countermeasures are listed.

[0108] [Countermeasure 1]

[0109] The first countermeasure to suppress leakage of the working fluid is to reduce the porosity of the outer wall of the flow path 141. Figure 7 This is an explanatory diagram showing the method of forming heat pipe 140 for countermeasure 1.

[0110] In process S1, when forming the ceramic substrate 220, as follows Figure 7 As shown in (a), the inner main body ceramic material 201 and the outer main body ceramic material 201b are stacked together as the main body ceramic material 201. The inner main body ceramic material 201a is stacked around the core ceramic material 202 and the support material 210, and functions as the outer wall of the flow path 141. The outer main body ceramic material 201b is further stacked around the inner main body ceramic material 201a.

[0111] The porosity of the ceramic material 201a used in the inner main body is lower than that of the ceramic material 201b used in the outer main body. For example, by adjusting the ratio of the slurry used in the inner main body ceramic material 201a and the outer main body ceramic material 201b, the porosity of the main body ceramic materials 201a and 201b can be adjusted respectively.

[0112] After the firing of the ceramic substrate 220 in step S2 and the finishing of the shape of the ceramic substrate 220 in step S3, in step S4, as... Figure 7 As shown in (b), the support material 210 is removed. A flow path 141 is then formed inside the ceramic material 201 in the main body, thus forming the main body 130. The main body 130 includes an inner main body 130a that forms the outer wall of the flow path 141 and an outer main body 130b located outside the inner main body 130a.

[0113] In this case, the porosity of the inner main body 130a is lower than that of the outer main body 130b, thus suppressing leakage of the working fluid self-flow path 141 in the heat pipe 140.

[0114] [Countermeasure 2]

[0115] As a second countermeasure to suppress leakage of the working fluid, a material different from ceramic material is used on the outer wall of the flow path 141. Figure 8 This is an explanatory diagram showing the method of forming heat pipe 140 for countermeasure 2.

[0116] In process S1, when forming the ceramic substrate 220, as follows Figure 8 As shown in (a), an outer wall material 250 is laminated around the core ceramic material 202 and the support material 210, and then a main body ceramic material 201 is laminated around the outer wall material 250. For the outer wall material 250, a material with a lower porosity than the main body ceramic material 201, such as quartz, is used to function as the outer wall of the flow path 141.

[0117] After the firing of the ceramic substrate 220 in step S2 and the finishing of the shape of the ceramic substrate 220 in step S3, in step S4, as... Figure 8 As shown in (b), the support material 210 is removed. Then, a flow path 141 with an outer wall portion 251 (outer wall material 250) is formed inside the ceramic material 201 of the main body portion, and the main body portion 130 is formed.

[0118] In this case, since the porosity of the outer wall portion 251 is low, leakage of the working fluid self-flow path 141 in the heat pipe 140 can be suppressed.

[0119] [Countermeasure 3]

[0120] As a third countermeasure to suppress leakage of the working fluid, a metal film is formed on the inner surface of the flow path 141. Figure 9 This is an explanatory diagram showing the method of forming heat pipe 140 for countermeasure 3.

[0121] Perform processes S1 to S3 sequentially, such as Figure 9 As shown in (a), a ceramic substrate 220 is formed. Then, in process S4, as... Figure 9 As shown in (b), after the support material 210 is removed, a metal film 260 is formed on the inner surface of the flow path 141. The method of forming the metal film 260 is arbitrary, for example, depositing a metal material on the inner surface of the flow path 141 to form the metal film 260.

[0122] In this case, the leakage of the working fluid in the self-flow path 141 of the heat pipe 140 can be suppressed by using the metal film 260.

[0123] <Other Implementation Methods>

[0124] In the above embodiments, the temperature adjustment of the fork 120 was described when the film formation process, which is a high-temperature process, and the etching process, which is a low-temperature process, are performed sequentially in the wafer processing system 1. However, when the process is performed sequentially from low-temperature to high-temperature, the temperature of the fork 120 can also be adjusted to an appropriate temperature.

[0125] Furthermore, the fork 120 can also be applied to the wafer transport device of a wafer processing system performing a single process. Even with a single process, the same problem exists as with multiple processes due to the difference in temperature at the start and end of the process. In this embodiment, the temperature of the fork 120 can be adjusted to appropriately regulate the temperature of the wafer W, thus enabling stable single processing.

[0126] Furthermore, in the above embodiments, the fork 120 is used in a wafer transport device 50 used under reduced pressure, but it can also be applied to a wafer transport device used under normal pressure.

[0127] In the fork 120 of the above embodiment, the heat pipe 140 formed inside the main body 130 is a closed type that seals the working fluid, but the type of heat pipe 140 is not limited to this. For example, the heat pipe 140 may also be a type that circulates the working fluid with the outside.

[0128] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

Claims

1. A substrate holder disposed on a substrate conveying device for holding the substrate, wherein, The substrate holder has: The main body is made of ceramic; and A heat pipe, formed inside the main body, provides a flow path for the working fluid. The heat pipe has a ceramic core formed on the inner side of the flow path when viewed from the side, and the core is formed in the central portion of the flow path. The porosity of the core is higher than that of the body, and the core has a capillary structure. The main body comprises: The inner main body portion, which forms the outer wall of the flow path; and The outer main body portion is located outside the inner main body portion. The porosity of the inner main body is lower than that of the outer main body.

2. The substrate holder according to claim 1, wherein, The heat pipe has a sealing member disposed at the open end of the flow path.

3. The substrate holder according to claim 1 or 2, wherein, The substrate holder has an outer wall portion of the flow path. The material of the outer wall portion is different from the material of the main body portion.

4. The substrate holder according to claim 1 or 2, wherein, The substrate holder has a metal film formed on the inner side of the flow path.

5. The substrate holder according to claim 1 or 2, wherein, The heat pipe extends from the top of the main body to the base.

6. A substrate transport apparatus for transporting a substrate relative to a plurality of processing devices under a reduced pressure atmosphere, wherein, The substrate conveying device has the following features: A substrate holder that holds the substrate; as well as A moving mechanism that moves the substrate holder at least in the horizontal direction. The substrate holder includes: The main body is made of ceramic; as well as A heat pipe, formed inside the main body, provides a flow path for the working fluid. The heat pipe has a ceramic core formed on the inner side of the flow path when viewed from the side, and the core is formed in the central portion of the flow path. The porosity of the core is higher than that of the body, and the core has a capillary structure. The main body comprises: The inner main body portion, which forms the outer wall of the flow path; and The outer main body portion is located outside the inner main body portion. The porosity of the inner main body is lower than that of the outer main body.

7. The substrate conveying device according to claim 6, wherein, The moving mechanism is equipped with a temperature regulating mechanism.

8. The substrate conveying apparatus according to claim 7, wherein, The heat pipe extends from the top of the main body to the base. The heat from the temperature regulating mechanism is conducted to the base of the heat pipe.

9. A method for manufacturing a substrate holder, the substrate holder being disposed in a substrate transport device for holding the substrate, wherein, The method for manufacturing this substrate holder includes the following steps: (a) A ceramic matrix with supporting material formed inside the ceramic material; (b) Remove the supporting material and form a flow path for the working fluid inside the ceramic material to form a ceramic body; as well as (c) A working fluid is sealed into the interior of the flow path to form a heat pipe. The ceramic material includes: The main body is made of ceramic material, which functions as the main body. as well as The core is made of ceramic material, which functions as the core of the heat pipe. In step (a), the core ceramic material is disposed on the inner side of the support material in a side view. The core ceramic material has a higher porosity than the body ceramic material, and the core has a capillary structure. The core is formed in the central portion of the flow path. The main body comprises: The inner main body portion, which forms the outer wall of the flow path; and The outer main body portion is located outside the inner main body portion. The porosity of the ceramic material in the inner main body is lower than that in the outer main body.

10. The method for manufacturing a substrate holder according to claim 9, wherein, The process (a) has the following steps: The ceramic matrix is ​​formed by layering the ceramic material and the supporting material; Firing the ceramic matrix; and The ceramic substrate is then subjected to fine machining of its shape.

11. The method for manufacturing a substrate holder according to claim 9 or 10, wherein, In step (c), after the working fluid is sealed into the interior of the flow path, a sealing member is provided at the end of the flow path.

12. The method for manufacturing a substrate holder according to claim 9 or 10, wherein, In step (a), an outer wall material of a different type from the ceramic material is layered around the support material. In step (b), the support material is removed, and the flow path is formed inside the outer wall material.

13. The method for manufacturing a substrate holder according to claim 9 or 10, wherein, After step (b), a metal film is formed on the inner surface of the flow path.

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