Method for increasing growth rate of selective epitaxial growth

Abstract

Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on a semiconductor device at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a process chamber to a temperature of about 550 °C to about 800 °C, introducing a silicon source including trichlorosilane (TCS), a phosphorous source, and a gas including a halogen into the process chamber, and depositing a silicon-containing epitaxial layer including phosphorous on the substrate, the silicon-containing epitaxial layer having a phosphorous concentration of about 1 x 1018atoms per cubic centimeter or more, wherein the silicon-containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or more. 21 ​

Description

[0001] This application is a divisional application of the invention patent application filed on March 16, 2016, with application number 201680020520.6 and entitled "Method for Improving the Growth Rate of Selective Epitaxial Growth". Technical Field

[0002] Embodiments of this disclosure generally relate to the field of semiconductor manufacturing processes and apparatus, and more particularly to a method of depositing a silicon-containing thin film for forming a semiconductor device. Background Technology

[0003] The shrinking size of metal-oxide-semiconductor field-effect transistors (MOSFETs) has enabled continuous improvements in the speed, density, and cost per unit function of integrated circuits. One way to improve transistor performance is by applying stress to the transistor channel region. Stress (e.g., strain) distorts the semiconductor lattice, and this distortion, in turn, affects the band alignment and charge transport characteristics of the semiconductor. By controlling the stress level in the finished device, manufacturers can improve carrier mobility and device performance.

[0004] One method to introduce stress into the transistor channel region is to incorporate carbon into the region during region forming. The carbon present in the region affects the semiconductor lattice and thereby induces stress. However, the quality of the epitaxially deposited film decreases with increasing carbon concentration within the film. Consequently, the tensile stress that can be induced before the film quality becomes unacceptable is limited.

[0005] Generally, carbon concentrations above approximately 1 atomic percent significantly degrade film quality and increase the likelihood of film growth problems. For example, the presence of carbon concentrations above 1 atomic percent can lead to film growth problems such as undesirable polycrystalline or amorphous silicon growth instead of epitaxial growth. Therefore, the benefits that can be gained by increasing film tensile stress through carbon incorporation are limited to films with carbon concentrations of 1 atomic percent or less. Furthermore, even films containing less than 1 atomic percent of carbon still suffer from some film quality issues.

[0006] Therefore, there will be a need to provide a process that can produce carbon-free epitaxial films with high tensile stress and excellent selective growth rates. Summary of the Invention

[0007] Embodiments of this disclosure generally relate to methods for forming a phosphorus-containing silicon epitaxial layer on a semiconductor device under increased pressure and decreased temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of approximately 550°C to approximately 800°C, introducing a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a halogen-containing gas into the processing chamber, and depositing a phosphorus-containing silicon epitaxial layer on the substrate, the silicon epitaxial layer having a density of approximately 1 x 10⁻⁶ cm². 21 The silicon-containing epitaxial layer has a phosphorus concentration of 1 atom or more, wherein the silicon-containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or more.

[0008] In another embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of approximately 600°C to approximately 750°C, introducing a gas mixture into the processing chamber, the gas mixture primarily consisting of a germanium source, a dopant source, and a halogen, and depositing a germanium-containing epitaxial layer on the substrate, the germanium-containing epitaxial layer having a density of approximately 1 x 10⁻⁶ cm². 21 The germanium-containing epitaxial layer has a dopant concentration of 1 atom or more, and is deposited at a chamber pressure of about 300 Torr or more.

[0009] In another embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of approximately 600°C to approximately 750°C, introducing a gas mixture into the processing chamber, the gas mixture primarily consisting of a germanium source, a dopant source, and a halogen, and depositing a germanium-containing epitaxial layer on the substrate, the germanium-containing epitaxial layer having a density of approximately 1 x 10⁻⁶ cm². 21 The germanium-containing epitaxial layer has a dopant concentration of 1 atom or more, and is deposited at a chamber pressure of about 300 Torr or more. Attached Figure Description

[0010] Embodiments of this disclosure can be understood by referring to the illustrative embodiments illustrated in the accompanying drawings, which have been briefly summarized above and discussed in more detail below. However, it should be noted that the drawings illustrate only typical embodiments of this disclosure and are therefore not intended to limit the scope of this disclosure, as other equally effective embodiments are permissible.

[0011] Figure 1 A flowchart illustrating a method for manufacturing an integrated circuit according to an embodiment of the present disclosure is shown.

[0012] Figure 2 A graph is plotted illustrating the ratio between the selective growth rate and the addition of TCS according to an embodiment of the present disclosure.

[0013] For ease of understanding, the same element symbols have been used where possible to designate common elements in the figures. The figures are not drawn to scale and have been simplified for clarity. It is conceivable that elements and features of one embodiment may be beneficially incorporated into other embodiments without further detail. Detailed Implementation

[0014] Embodiments of this disclosure generally provide a selective epitaxial process for phosphorus-containing silicon layers with high phosphorus concentrations. In various embodiments, the selective epitaxial process uses a silicon source comprising trichlorosilane (TCS) and, optionally, dichlorosilane (DCS), a phosphorus dopant source, and a halogen-containing gas, and is performed at increased processing pressures above 300 Torr and decreased processing temperatures from about 550°C to about 800°C to allow the formation of layers with a phosphorus concentration of about 1 x 10⁻⁶ ppm. 21 Silicon epitaxial thin films with a phosphorus concentration of 1 atom or more. Approximately 1 x 10⁻⁶ per cubic centimeter. 21 A phosphorus concentration of 1 atom or more increases the tensile strain of the deposited layer, thereby leading to increased carrier mobility and improved device performance in MOSFET structures. It has been observed that the use of TCS and DCS can also accelerate selective growth rates and reduce halogen usage, while maintaining phosphorus concentrations at 1 x 10⁻⁶ per cubic centimeter. 21 One atom or more than 1x10 21 Each atom. Several implementation methods are discussed in more detail below.

[0015] The implementation of this disclosure can be performed in... The implementation is carried out in an RP epitaxial chamber, which is available from Applied Materials Inc. in Santa Clara, California, USA. Other chambers are contemplated for use in implementing embodiments of this disclosure, including those available from other manufacturers.

[0016] Figure 1 This is flowchart 100, which illustrates a method for forming an epitaxial layer according to an embodiment of the present disclosure. In step 102, a substrate is positioned within a processing chamber. The substrate is envisioned to be a planar substrate or a patterned substrate. A patterned substrate is a substrate that includes electronic features formed within or above a substrate processing surface. The substrate may contain a single-crystal surface and / or a non-single-crystal secondary surface, such as a polycrystalline or amorphous surface. A single-crystal surface includes an exposed crystalline substrate or a deposited single-crystal layer typically made of materials such as silicon, germanium, silicon-germanium, or silicon-carbon. A polycrystalline or amorphous surface may include a dielectric material, such as an oxide or nitride, specifically silicon oxide or silicon nitride, and an amorphous silicon surface. It should be understood that the substrate may include multiple layers or include, for example, partially fabricated devices such as transistors and flash memory devices, etc.

[0017] In step 104, the substrate is heated to a target temperature. The processing chamber can be maintained at a temperature ranging from about 250°C to about 1000°C, which may be suitable for a particular process. The appropriate temperature for performing the epitaxial process may be determined based on the specific precursor used to deposit and / or etch the silicon-containing material. In various embodiments, the temperature used to preheat the processing chamber is about 850°C or lower, for example, about 750°C or lower. In one example, the substrate is heated to a temperature of about 550°C to about 800°C, for example, about 600°C to about 750°C, such as about 650°C to about 725°C. In another example, the substrate is heated to a temperature of about 550°C to about 750°C. In yet another example, the substrate is heated to a temperature of about 600°C to about 850°C. The thermal budget of the final apparatus can be minimized by heating the substrate to a minimum temperature sufficient to thermally decompose the process reactants and deposit a layer on the substrate. However, since increased temperatures generally result in increased yields, it is contemplated that higher temperatures may be used, as indicated by production requirements.

[0018] In step 106, one or more processing reactants are introduced into the processing chamber. The processing reactants may be introduced into the processing chamber simultaneously or continuously in the form of a gas mixture or separate gas mixtures. The processing reactants may include one or more deposition gases, one or more halogen precursors, and at least one dopant gas. The deposition gas may include one or more precursor gases selected from Group III, Group V, Group VI, or Group IV precursor gases. In the case of forming a silicon-containing epitaxial layer, the deposition gas may contain at least a silicon source. The deposition gas may, depending on the situation, contain at least one secondary element source, such as a germanium source. If a germanium-containing epitaxial layer is required, the deposition gas may contain at least a germanium source, without the need for a silicon source. It is conceivable that other elements such as metals, halogens, or hydrogen may typically be incorporated into the silicon- or germanium-containing epitaxial layer at parts per million (ppm) concentrations.

[0019] Dopant gases provide deposited epitaxial layers with desired conductivity characteristics and various electrical characteristics, such as the directed electron flow in a controlled and desired path required by an electronic device. Exemplary dopant gases may include, but are not limited to, phosphorus, boron, arsenic, gallium, or aluminum, depending on the desired conductivity characteristics of the deposited epitaxial layer.

[0020] Exemplary silicon sources may include, but are not limited to, silanes, silane halides, silicon tetrachloride (SiCl4), or combinations thereof. Silanes may include silanes (SiH4) and those having the empirical formula Si. x H( 2x+2 Higher silanes, such as disilane (Si₂H₆), trisilane (Si₃H₈), and tetrasilane (Si₄H₂O), are also included. 10The silane halide may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC), or combinations thereof. In one embodiment, the silicon source comprises TCS. In another embodiment, the silicon source comprises both TCS and DCS. In yet another embodiment, the silicon source comprises SiCl4 and DCS.

[0021] The halogen precursor may flow simultaneously with or in conjunction with the deposition gas (i.e., in a co-flow mode) during the epitaxial process. In some embodiments, the deposition gas may flow continuously into the processing chamber along with the halogen precursor supplied at predetermined intervals, such as about every 1 second, every 3 seconds, or every 5 seconds, or other suitable intervals required by the operator. Alternatively, the deposition gas and the halogen precursor may be supplied alternately to the processing chamber.

[0022] Exemplary halogen precursors may be those containing halogen molecules, such as chlorine or hydrogen chloride. In one embodiment, the halogen precursor is hydrogen chloride (HCl). Hydrogen chloride may be transported as a hydrogen chloride gas or as separate hydrogen and chlorine gases that react in a processing chamber to form HCl. Heavily doped N-type films have been observed to be effectively formed using halogen precursors by employing HCl at temperatures ranging from about 500°C to about 750°C (e.g., from about 650°C to about 725°C).

[0023] In some embodiments, the deposition gas and halogen precursor may flow separately into the processing chamber. In some embodiments, the deposition gas and halogen precursor may be premixed and formed into a gas mixture before flowing into the processing chamber. In either case, the flow rate ratio of the deposition gas to the halogen precursor in the processing chamber may be from about 20:1 to about 3:1, for example from about 12:1 to about 6:1, for example from about 10:1 to about 8:1. If two silicon sources are used for the deposition gas, such as SiCl4 and DCS, the flow rate ratio of SiCl4:HCl may be from about 12:1 to about 6:1, for example from about 10:1 to about 8:1, while the flow rate ratio of DCS:HCl may be from about 3:1 to about 1.5:1, for example from about 2:1 to about 1.8:1. Conversely, it is conceivable that DCS, SiCl4, and HCl mentioned herein may be replaced by any other silicon source and halogen precursor described in this disclosure by using the flow rates described herein. For example, the flow ratio of halogen precursor to TCS can be from about 12:1 to about 6:1, while the flow ratio of halogen precursor to DCS can be from about 3:1 to about 1.5:1.

[0024] The treatment of reactants may include a carrier gas, depending on the circumstances. The carrier gas may be selected based on the precursors used and / or the process temperature during the epitaxial process. Suitable carrier gases include nitrogen, hydrogen, argon, helium, or other gases that are inert relative to the epitaxial process. Nitrogen may be used as a carrier gas in embodiments characterized by low-temperature processes (e.g., below 850°C). The carrier gas may have a flow rate from about 1 SLM (standard liters per minute) to about 100 SLM, such as from about 3 SLM to about 30 SLM.

[0025] In one exemplary embodiment requiring a phosphorus-containing silicon epitaxial layer, the processing reactants may comprise a silicon source, a phosphorus source, and HCl, the silicon source comprising TCS. The TCS may be supplied to the processing chamber at a flow rate ranging from about 200 sccm to about 400 sccm, such as from about 250 sccm to about 350 sccm, for example, about 300 sccm. An exemplary phosphorus source comprises phosphine, which may be delivered to the processing chamber at a rate ranging from about 0.1 sccm to about 950 sccm, such as from about 0.5 sccm to about 150 sccm, for example, about 95 sccm. HCl may be supplied to the processing chamber at a rate ranging from about 50 sccm to about 200 sccm, such as from about 80 sccm to about 150 sccm, for example, about 110 sccm. The TCS concentration in the silicon source may be at least about 15% or more, such as about 25% or more, such as about 45% or more, for example, from about 65% to about 90%.

[0026] In another exemplary embodiment requiring a phosphorus-containing silicon epitaxial layer, the processing reactants may include a silicon source, a phosphorus source, and HCl. The silicon source includes a TCS and a DCS. The TCS may be supplied to the processing chamber at a flow rate ranging from about 200 sccm to about 400 sccm, such as about 250 sccm to about 350 sccm, for example, about 300 sccm. The DCS may be supplied to the processing chamber at a flow rate ranging from about 400 sccm to about 600 sccm, such as about 350 sccm to about 550 sccm, for example, about 500 sccm. An exemplary phosphorus source includes phosphine, which may be delivered to the processing chamber at a rate ranging from about 0.1 sccm to about 950 sccm, such as about 0.5 sccm to about 150 sccm, for example, about 95 sccm. HCl may be supplied to the processing chamber at a rate ranging from about 50 sccm to about 200 sccm, such as about 80 sccm to about 150 sccm, for example, about 100 sccm. The TCS concentration in the silicon source may be at least about 15% or more, such as about 25% or more, such as about 45% or more, for example about 65% to about 85%. Depending on the TCS concentration, the DCS concentration in the silicon source may be at least about 15% or more, such as about 25% or more, such as about 45% or more, for example about 65% to about 85%. If required, the TCS described in this embodiment may be replaced with silicon tetrachloride (SiCl4). In some embodiments, a silicon source comprising SiCl4, TCS, and DCS may be used. In this case, SiCl4 may be provided to the processing chamber at the same flow rate as TCS or DCS, as discussed in this embodiment. In any of these examples, TCS may first flow into the processing chamber and act as a pretreatment gas to passivate the dielectric surface of the substrate, followed by DCS and / or SiCl4 (in any desired order).

[0027] In step 108, the reactant mixture undergoes a thermal reaction to form a phosphorus-containing silicon epitaxial layer on the substrate surface. During the process, the temperature within the processing chamber is maintained at approximately 550°C to approximately 800°C, for example, approximately 600°C to approximately 750°C, or approximately 650°C to approximately 725°C. The pressure within the processing chamber is maintained at approximately 150 Torr or higher, for example, approximately 300 Torr to approximately 600 Torr. It is envisioned that pressures greater than approximately 600 Torr could be used without using a low-pressure deposition chamber. Conversely, typical epitaxial growth processes in low-pressure deposition chambers maintain processing pressures of approximately 10 Torr to approximately 100 Torr and processing temperatures greater than 700°C. However, it has been observed that by increasing the pressure to approximately 150 Torr or higher, for example, approximately 300 Torr or higher, a higher phosphorus concentration (e.g., approximately 1 x 10⁻⁶ per cubic centimeter) can be formed in the deposited epitaxial film compared to epitaxial growth processes with lower pressures. 21 From one atom to approximately 5 x 10^12 atoms per cubic centimeter. 21 (atoms).

[0028] When phosphine is supplied at a flow rate of about 3 sccm to about 5 sccm, the phosphorus concentration of the epitaxial film formed at a pressure below 100 Torr is about 3 x 10⁻⁶ per cubic centimeter. 20 Each atom. Thus, epitaxial layers formed under high pressure (e.g., 300 Torr or more) can withstand approximately ten times the phosphorus concentration compared to epitaxial films formed at pressures below about 100 Torr or less.

[0029] Without intending to be bound by theory, it is believed that at approximately 1 x 10⁻⁶ cubic centimeters... 21 At phosphorus concentrations of 1 atom or greater, the deposited epitaxial film is not entirely a phosphorus-doped silicon film, but rather an alloy between silicon and silicon phosphide (e.g., a quasi-cubic structure of Si3P4). It is believed that the silicon / silicon phosphide alloy leads to increased tensile stress in the epitaxial film. The likelihood of forming a silicon / silicon phosphide alloy increases with higher phosphorus concentrations due to the increased probability of interactions between adjacent phosphorus atoms.

[0030] Epitaxial films formed at process temperatures between approximately 600°C and approximately 750°C and under pressures above 300 Torr are doped to a sufficient phosphorus concentration (e.g., approximately 1 x 10⁻⁶ per cubic centimeter). 21 Increased tensile stress occurs when the number of atoms (or more) is increased. Generally, selective epitaxy processes allow epitaxial layers to grow on silicon surfaces, while growth on dielectric surfaces (e.g., oxides or nitrides) is minimized. To maintain selectivity during the epitaxial process (i.e., to achieve crystalline growth on the substrate silicon surface without any growth on the dielectric surface), the deposition gas, halogen precursor, and reaction temperature can be adjusted and controlled throughout the epitaxial process. Although it is difficult to simultaneously achieve the desired growth rate of high phosphorus concentration and morphological smoothness in silicon epitaxy at low temperatures, the inventors have unexpectedly observed that the selective growth rate can be significantly improved at higher temperatures, such as the aforementioned 600°C or above (e.g., about 725°C to about 800°C), by using a silicon source containing TCS. Without being bound by any particular theory, it is believed that the weaker Si-H bonds in TCS (i.e., SiCl3-H) decompose to produce Si-Cl reactive species, which passivate the dielectric surface, thereby resulting in a longer incubation time on the exposed dielectric surface. Therefore, growth selectivity is enhanced at higher temperatures, even with a limited supply of halogen precursors. Enhanced growth rate and selectivity can also be achieved when both TCS and DCS are used as silicon sources, when DCS and SiCl4 are used as silicon sources, or when TCS, DCS, and SiCl4 are used as silicon sources.

[0031] Therefore, if the substrate includes both a dielectric surface and a silicon surface, TCS can be used as a pretreatment gas to passivate the dielectric surface. In this case, a silicon source containing TCS can flow into the processing chamber, followed by DCS. The substrate can be exposed to the TCS pretreatment gas for a predetermined period of time (depending on the substrate size), for example, from about 1 second to about 120 seconds, from about 5 seconds to about 60 seconds, or from about 10 seconds to about 30 seconds.

[0032] Table 1 below illustrates improvements in phosphorus concentration and selective growth rate of phosphorus-containing epitaxial layers according to embodiments of this disclosure, formed by using a DCS alone and by using a DCS+TCS supplied at different flow rate increments. In all examples shown in Table 1, the DCS is provided at a flow rate of approximately 500 sccm, and the TCS is provided at flow rates of approximately 30 sccm, 60 sccm, 120 sccm, and 240 sccm, respectively. Phosphorus is provided at a flow rate of approximately 950 sccm (10% of H2). HCl (not shown) is provided at a flow rate of approximately 100 sccm. Nitrogen (not shown), acting as a carrier gas, is provided at a flow rate of approximately 3 SLM. In all examples, the processing chamber is heated and maintained at approximately 650°C, and the chamber pressure is approximately 300 Torr. The process conditions described herein and throughout the disclosure are based on a 300 mm diameter substrate.

[0033] Table 1

[0034]

[0035] As can be seen in Examples 1-5, during the epitaxial process, when TCS is added to DCS, the selective growth rate advantageously increases from approximately [missing value]. / minute increased to approximately / minute, an improvement of approximately 35%. Meanwhile, the phosphorus concentration decreased from approximately 2.20 x 10⁻⁶ per cubic centimeter. 21 The number of atoms increased to approximately 2.50 x 10^6 atoms per cubic centimeter. 21 The higher phosphorus concentration indicates that the addition of TCS enhances phosphorus incorporation into the layer, while also improving the selective growth rate. This increased growth rate also... Figure 2 The data confirms that the graph is a curve, illustrating the comparison between selective growth rate and TCS addition in Examples 1-5, which were plotted using a linear fitting line in Table 1 above.

[0036] The epitaxial processes in steps 106 and 108 can be repeated or maintained until the predetermined thickness and / or film profile is achieved.

[0037] It should be noted that the concepts described in the embodiments of this disclosure are also suitable for epitaxial processes to form other materials. Some possible examples may include undoped silicon, SiGe / SiGe:B, Si:CP, pure Ge, GeSn, GeP, GeB, or GeSnB, etc., each of which can be used for logic and memory applications. In such cases, possible silicon precursors may be related to the above. Figure 1 The precursors mentioned are the same, and possible germanium precursors may include, but are not limited to, GeH4 and Ge2H6. Examples of germanium halides that can be used to improve the growth rate may include, but are not limited to, GeCl4, GeHCl3, Ge2Cl6, Ge3Cl8, etc.

[0038] In embodiments requiring a germanium-containing epitaxial layer, the processing chamber can be maintained at a temperature ranging from about 550°C to about 800°C, for example, from about 600°C to about 750°C, such as from about 650°C to about 725°C. The processing reactants may include a germanium source, a dopant source, and a halogen-containing precursor gas. The dopant source and halogen may be those described above relative to... Figure 1 The dopant gases may include phosphorus, boron, arsenic, gallium, or aluminum. Halogen precursors may include chlorine or hydrogen chloride. Germanium sources such as germanium precursors or germanium halides, as discussed above, may be supplied to the processing chamber at flow rates ranging from about 200 sccm to about 400 sccm, such as about 250 sccm to about 350 sccm, for example, about 300 sccm. Alternatively, the germanium source may include both germanium precursors and germanium halides, as discussed above. An exemplary dopant source includes phosphine, which may be supplied to the processing chamber at rates ranging from about 0.1 sccm to about 950 sccm, such as about 0.5 sccm to about 150 sccm, for example, about 95 sccm. Halogen precursors such as HCl may be supplied to the processing chamber at rates ranging from about 50 sccm to about 200 sccm, such as about 80 sccm to about 150 sccm, for example, about 110 sccm. The pressure within the processing chamber can be maintained at approximately 150 Torr or greater, for example, approximately 300 Torr to approximately 600 Torr. The deposited germanium epitaxial thin film forms at approximately 1 x 10⁻⁶ cm². 21 From one atom to approximately 5 x 10^12 atoms per cubic centimeter. 21 A higher phosphorus concentration per atom.

[0039] In some embodiments, the flow rate ratio of the germanium source to the halogen precursor in the processing chamber can be from about 20:1 to about 3:1, for example from about 12:1 to about 6:1, for example from about 10:1 to about 8:1. If two germanium sources are used for the deposition gas, such as a germanium precursor and germanium halide, the flow rate ratio of germanium precursor:HCl can be from about 12:1 to about 6:1, for example from about 10:1 to about 8:1, while the flow rate ratio of germanium halide:HCl can be from about 3:1 to about 1.5:1, for example from about 2:1 to about 1.8:1. Conversely, the germanium precursor, germanium halide, and HCl mentioned herein can be any germanium source and halogen precursor described in this disclosure using the flow rates described herein.

[0040] The benefits of this disclosure include improved growth rate and selectivity in selective epitaxial processes of phosphorus-containing silicon layers by using a silicon source comprising trichlorosilane (TCS), a phosphorus dopant source, and a precursor gas containing halogen molecules. The increased processing pressure, combined with a reduced process temperature below approximately 800°C, allows for efficient removal of potential silicon nuclei from the dielectric surface and the formation of layers with a density of 3 x 10⁻⁶ ppm. 21 Silicon epitaxial films with phosphorus concentrations of one atom or greater can be produced without sacrificing yield. High phosphorus concentrations induce stress within the deposited epitaxial film, thereby increasing tensile strain, which in turn leads to increased carrier mobility and improved device performance.

[0041] Although the foregoing relates to the implementation of this disclosure, other and more implementations of this disclosure may be designed without departing from the basic scope of this disclosure.

Claims

1. A method for forming a thin film on a substrate, the method comprising the following steps: The substrate placed in the processing chamber is heated to a temperature of 550°C to 800°C, and the substrate is exposed to a pretreatment gas including trichlorosilane (TCS). as well as The deposition process is performed by exposing the substrate to a silicon source comprising SiCl4 and dichlorosilane (DCS) and hydrogen chloride (HCl) throughout the deposition process to deposit a silicon-containing epitaxial layer on the substrate, wherein the silicon-containing epitaxial layer is deposited at a chamber pressure of 150 Torr or greater.

2. The method of claim 1, wherein the silicon source and the HCl flow into the processing chamber in a co-flow mode.

3. The method of claim 1, wherein the HCl flows into the processing chamber at predetermined intervals of 1 second, 3 seconds, or 5 seconds.

4. The method of claim 1, wherein the deposition process further comprises exposing the substrate to a phosphorus source.

5. The method of claim 4, wherein the silicon-containing epitaxial layer has a density of 1 x 10⁻⁶ cm². 21 Phosphorus concentration of 1 atom or more.

6. The method of claim 1, wherein the silicon-containing epitaxial layer is deposited at a chamber pressure of 300 Torr to 600 Torr.

7. The method of claim 1, further comprising: A germanium-containing gas is introduced into the processing chamber, wherein the silicon-containing epitaxial layer is silicon-doped germanium.

8. The method of claim 1, wherein the DCS and the HCl flow into the processing chamber at a flow ratio of 3:1 to 1.5:

1.

9. The method of claim 1, wherein the SiCl4 and HCl flow into the processing chamber at a flow ratio of 12:1 to 6:

1.

10. A method for forming an epitaxial thin film on a substrate, the method comprising the following steps: A substrate disposed in a processing chamber is exposed to a pretreatment gas comprising trichlorosilane (TCS) at a temperature of 550°C to 800°C; and then... While supplying TCS into the processing chamber, a silicon-containing precursor comprising silicon tetrachloride (SiCl4), a dopant source, and hydrogen chloride (HCl) are introduced into the processing chamber at a chamber pressure of 300 Torr or higher to deposit a silicon-containing epitaxial layer on the substrate, wherein the silicon-containing epitaxial layer has a density of 1 x 10⁻⁶ cm². 21 Dopant concentration of 1 atom or more.

11. The method of claim 10, wherein the dopant source comprises phosphorus, boron, arsenic, gallium, or aluminum.

12. The method of claim 10, further comprising: A germanium-containing gas is introduced into the processing chamber, wherein the silicon-containing epitaxial layer is silicon-doped germanium.

13. A method for forming a thin film on a substrate, the method comprising the following steps: The substrate placed in the processing chamber is exposed to a pretreatment gas including trichlorosilane (TCS); And then While supplying TCS to the processing chamber, a silicon-containing gas comprising dichlorosilane (DCS), silicon tetrachloride (SiCl4), and a dopant gas are introduced into the processing chamber to deposit a silicon-containing epitaxial layer on the substrate, wherein the silicon-containing epitaxial layer has a density of 1 x 10⁻⁶ cm². 21 Dopant concentration of 1 atom or more.

14. The method of claim 13, further comprising: While supplying DCS to the processing chamber, germanium-containing gas is introduced into the processing chamber.

15. The method of claim 13, wherein the dopant gas comprises phosphorus, boron, arsenic, gallium, or aluminum.

16. The method of claim 13, further comprising: While supplying DCS to the processing chamber, halogen gas is introduced into the processing chamber.

17. The method of claim 16, wherein the halogen is chlorine or hydrogen chloride.

18. The method of claim 16, wherein the halogen gas and the DCS flow into the processing chamber at a flow ratio of 3:1 to 1.5:1, and the halogen gas and the TCS flow into the processing chamber at a flow ratio of 12:1 to 6:1.

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