Package and method of manufacturing the same

Abstract

The method includes: attaching a die to a thermal compression bonding (TCB) head by vacuum suction, wherein the die includes a plurality of conductive pillars; attaching a first substrate to a chuck by vacuum suction, wherein the first substrate includes a plurality of solder bumps; contacting a first conductive pillar of the plurality of conductive pillars with a first solder bump of the plurality of solder bumps, wherein the contacting the first conductive pillar with the first solder bump results in a first height between a topmost surface of the first conductive pillar and a bottommost surface of the first solder bump; and bonding the first solder bump to the first conductive pillar to form a first joint, wherein the bonding the first solder bump to the first conductive pillar includes heating the TCB head. Embodiments of the present application also relate to packages and methods of manufacturing the same.

Description

Technical Field

[0001] Embodiments of this application relate to packages and methods of manufacturing the same. Background Technology

[0002] Integrated circuits are formed on semiconductor wafers, which are then sawn into semiconductor chips. These chips can be bonded to a packaging substrate. During bonding, solder bumps between the semiconductor chip and the packaging substrate are reflowed. Conventional reflow methods include convection reflow or thermo-press reflow. Convection reflow offers relatively high throughput because multiple packaging substrates and the dies on top can be bonded simultaneously via reflow. However, convection reflow requires a long time to heat the solder bumps. The resulting high thermal budget can lead to significant warping within the die and may cause delamination between low-k dielectric layers within the die.

[0003] Thermopress reflow requires a lower thermal budget than convection reflow. In a conventional thermopress bonding process, dies are stacked on a package substrate, with solder bumps on the die surface pressed against solder bumps on the package substrate surface. After the solder bumps melt, they cool to solidify. Summary of the Invention

[0004] Some embodiments of this application provide a method for manufacturing a package, comprising: attaching a die to a thermocompression bonding (TCB) head by vacuum suction, wherein the die includes a plurality of conductive pillars; attaching a first substrate to a chuck by vacuum suction, wherein the first substrate includes a plurality of solder bumps; contacting a first conductive pillar of the plurality of conductive pillars with a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar with the first solder bump creates a first height between the top surface of the first conductive pillar and the bottom surface of the first solder bump; and bonding the first solder bump to the first conductive pillar to form a first connector, wherein bonding the first solder bump to the first conductive pillar includes heating the thermocompression bonding head.

[0005] Other embodiments of this application provide a method of manufacturing a package, comprising: bonding a first side of a first die to a first side of a first substrate, wherein the first substrate includes a first plurality of solder bumps located on the first side of the first substrate, and the first die includes a first plurality of conductive posts located on the first side of the first die, wherein bonding the first side of the first die to the first side of the first substrate comprises: attaching the first die to a thermocompression bonding (TCB) head by vacuum suction; attaching the first substrate to a chuck by vacuum suction; adjusting the vertical distance of the thermocompression bonding head relative to the chuck to initiate contact between a first conductive post of the first plurality of conductive posts and a first solder bump of the first plurality of solder bumps; and heating the thermocompression bonding head and the chuck to bond the first conductive post to the first solder bump and form a first joint, wherein the vertical distance of the thermocompression bonding head relative to the chuck increases during heating of the thermocompression bonding head and the chuck.

[0006] Further embodiments of this application provide a package comprising: a first die; a first substrate bonded to the first die using a plurality of first conductive connectors, wherein each of the plurality of first conductive connectors includes a first conductive post bonded to a first solder bump, wherein each of the plurality of first conductive connectors includes an hourglass shape, wherein the lower portion of the first solder bump extends through a solder mask layer, and wherein the width of the first solder bump continuously decreases in a direction toward a midpoint between the bottom surface of the first conductive post and the top surface of the solder mask layer; and a second substrate bonded to the first substrate using a plurality of second conductive connectors. Attached Figure Description

[0007] The various aspects of the invention will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industrial practice, the components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the components may be arbitrarily increased or decreased.

[0008] Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6A , Figure 6B , Figure 6C , Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 A cross-sectional view is shown of an intermediate stage in the manufacture of a semiconductor device package 1000 according to some embodiments.

[0009] Figure 12A , Figure 12B , Figure 12C , Figure 12D , Figure 12E , Figure 12F , Figure 12G and Figure 12H A cross-sectional view is shown of an intermediate stage in the manufacturing of a semiconductor device package 2000 according to an optional embodiment.

[0010] Figure 12I , Figure 12J , Figure 12K , Figure 12L , Figure 12M , Figure 12N , Figure 12O , Figure 12P and Figure 12Q A cross-sectional view of the welded joint according to an alternative embodiment is shown.

[0011] Figure 13A , Figure 13B , Figure 13C A cross-sectional view is shown of an intermediate stage in the manufacturing of a semiconductor device package 3000 according to an optional embodiment.

[0012] Figure 14A , Figure 14B , Figure 14C and Figure 14D A cross-sectional view is shown of an intermediate stage in the manufacturing of a semiconductor device package 4000 according to an optional embodiment. Detailed Implementation

[0013] The following disclosure provides numerous different embodiments or examples for implementing various features of the invention. Specific examples of components and arrangements are described below to simplify the invention. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component above or on a second component can include embodiments where the first and second components are in direct contact, and can also include embodiments where an additional component can be formed between the first and second components, thereby allowing the first and second components to not be in direct contact. Furthermore, reference numerals and / or characters may be repeated in various instances of the invention. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0014] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” may be used to describe the relationship between one element or component and another (or other elements or components) as shown in the figure. In addition to the orientation shown in the figure, spatial relative terms are intended to include different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly.

[0015] Various embodiments provide methods for forming device packages, including, but not limited to, one or more semiconductor chips bonded to an interposer and a package substrate bonded to the interposer on the side opposite to the one or more semiconductor chips. In some embodiments, the device package may be referred to as a chip-on-wafer (CoWoS). The interposer may be bonded to one or more semiconductor chips using semiconductor chips and / or solder bumps on the interposer reflowed using thermocompression bonding (TCB). Thermocompression bonding (TCB) equipment includes a TCB bonding head that provides vacuum force to hold a first workpiece (e.g., a semiconductor chip) and a vacuum chuck stage that provides vacuum force to hold a second workpiece (e.g., a package substrate). During the bonding of the interposer to the semiconductor chip, a heating process is performed to reflow the solder bumps, wherein the TCB bonding head and the vacuum chuck stage provide heat to reflow the solder bumps. During the heating process, the height of the solder bumps may be maintained to allow the formation of solder bumps with a cylindrical shape, or the height of the solder bumps may be increased to allow the formation of solder bumps with an hourglass shape. Advantageous features of one or more embodiments disclosed herein may include improved device package coplanarity (COP) and prevention of deformation or warping of the interposer and package substrate due to vacuum forces present during heating processes. This improvement in coplanarity and reduction in warping allows for enhanced connectivity between the package substrate (e.g., a printed circuit board) and the interposer when the package substrate and interposer are bonded together.

[0016] The embodiments will be described with reference to a specific context, namely a die-intermediate substrate stacked package using a chip-on-wafer (CoWoS) process. However, other embodiments may be applied to other packages. The embodiments discussed herein are intended to provide examples enabling the manufacture or use of the subject matter of the invention, and modifications that may be made while remaining within the scope of consideration for the different embodiments will be readily understood by those skilled in the art. The same reference numerals and characters in the following figures refer to the same components. While method embodiments may be discussed as being implemented in a particular order, other method embodiments may be implemented in any logical order.

[0017] Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6A , Figure 6B , Figure 6C , Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 A cross-sectional view is shown of an intermediate stage in the manufacture of a semiconductor device package 1000 according to some embodiments.

[0018] Figure 1 One or more dies 68 are shown. In some embodiments, one or more dies 68 may be initially formed as part of a wafer and subsequently diced. In embodiments, substrate 60 may include a bulk semiconductor substrate, a semiconductor-on-insulator (SOI) substrate, a multilayer semiconductor substrate, etc. The semiconductor material of substrate 60 may be silicon, germanium; compound semiconductors, including silicon germanium, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors, including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP; or combinations thereof. Other substrates, such as multilayer or gradient substrates, may also be used. Substrate 60 may be doped or undoped. Devices such as transistors, capacitors, resistors, diodes, etc., may be formed in and / or on the active surface 62.

[0019] An interconnect structure 64 comprising one or more dielectric layers and corresponding metallization patterns is formed on the active surface 62. The metallization patterns in the dielectric layers can route electrical signals between devices, such as by using vias and / or traces, and can also contain individual electrical components, such as capacitors, resistors, inductors, etc. The individual devices and metallization patterns can be interconnected to implement one or more functions. Functions may include memory structures, processing structures, sensors, amplifiers, power distribution, input / output circuits, etc.

[0020] More specifically, an intermetallic dielectric (IMD) layer can be formed in the interconnect structure 64. The IMD layer can be formed from, for example, a low-k dielectric material, such as undoped silicate glass (USG), phosphosilicate glass (PSG), borosilicate glass (BPSG), fluorosilicate glass (FSG), or SiO2 using any suitable method known in the art (such as spin-coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma-enhanced chemical vapor deposition (HDP-CVD), etc.). x C ySpin-coated glass, spin-coated polymers, silicon-carbon materials, their compounds, their composites, combinations thereof, etc. Metallization patterns can be formed in the IMD layer, for example, by using photolithography to deposit and pattern photoresist material on the IMD layer to expose portions of the IMD layer that will become metallized patterns. Etching processes such as anisotropic dry etching can be used to create grooves and / or openings in the IMD layer corresponding to the exposed portions of the IMD layer. The grooves and / or openings can be lined with a diffusion barrier layer and filled with a conductive material. The diffusion barrier layer can include one or more layers of tantalum nitride, tantalum, titanium nitride, titanium, cobalt-tungsten, etc., or combinations thereof, deposited by atomic layer deposition (ALD), etc. The conductive material of the metallization pattern can include copper, aluminum, tungsten, silver, and combinations thereof, deposited by CVD, physical vapor deposition (PVD), etc. Any excess diffusion barrier layer and / or conductive material on the IMD layer can be removed, for example, by using chemical mechanical polishing (CMP).

[0021] Furthermore, die connectors 66, such as conductive pillars, conductive bumps, etc., are formed in and / or on the interconnect structure 64 to provide external electrical connections to circuits and devices within the interconnect structure 64 and on the active surface 62. In the illustrated embodiment, the die connectors 66 are formed in openings in the dielectric layer of the interconnect structure 64. Each die connector 66 extends through the opening in the dielectric layer of the interconnect structure 64 to contact the conductive pads of the interconnect structure 64. A photoresist (not shown) that can be exposed to light for patterning can be formed by spin coating or the like. Patterning forms openings through the photoresist to expose the conductive pads of the interconnect structure 64. A conductive material is then formed in the openings of the photoresist and on the exposed portions of the conductive pads to form the die connectors 66. The die connectors 66 may include metals such as copper, aluminum, gold, nickel, palladium, etc., or combinations thereof, and can be formed by sputtering, printing, electroplating, electroless plating, CVD, etc. The photoresist can be removed by an acceptable ashing or stripping process, such as using oxygen plasma. The die connector 66 may be solderless and have substantially vertical sidewalls. In some embodiments, the die connector 66 protrudes from the interconnect structure 64 to form a pillar structure to be utilized when the die 68 is joined to other structures. Those skilled in the art will understand that the examples provided above are for illustrative purposes. Other circuitry may be used when appropriate for a given application.

[0022] exist Figure 2 In this embodiment, a substrate 60, including an interconnect structure 64, is divided into individual dies 68. Typically, each die 68 may contain the same circuitry, such as devices and metallization patterns, but in some embodiments, the dies may have different circuitry. Dividing may include sawing, slicing, etc.

[0023] Die 68 may include one or more logic dies (e.g., central processing unit, graphics processing unit, system-on-a-chip, field-programmable gate array (FPGA), microcontroller, etc.), memory dies (e.g., dynamic random access memory (DRAM) dies, static random access memory (SRAM) dies, etc.), power management dies (e.g., power management integrated circuit (PMIC) dies), radio frequency (RF) dies, sensor dies, microelectromechanical systems (MEMS) dies, signal processing dies (e.g., digital signal processing (DSP) dies), front-end dies (e.g., analog front-end (AFE) dies), etc., or combinations thereof. Furthermore, in some embodiments, die 68 may be of different dimensions (e.g., different heights and / or surface areas), and in other embodiments, die 68 may be of the same dimensions (e.g., the same height and / or surface area). In embodiments, each die 68 may have a diameter equal to or greater than 1200 mm. 2 The die area. In an embodiment, each die 68 may have a thickness equal to or greater than 400 μm.

[0024] Figure 3 A packaging substrate 40 is shown, which may initially be formed as part of a wafer. The substrate 70 of the packaging substrate 40 may include a bulk semiconductor substrate, an SOI substrate, a multilayer semiconductor substrate, etc. The semiconductor material of the substrate 70 may be silicon, germanium; compound semiconductors, including silicon germanium, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors, including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP; or combinations thereof. Other substrates, such as multilayer or gradient substrates, may also be used. The substrate 70 may be doped or undoped. Devices, such as transistors, capacitors, resistors, diodes, etc., may be formed in and / or on the first surface 72 of the substrate 70 (which may also be referred to as the active surface). In other embodiments, the packaging substrate 40 may not have any active devices, and the packaging substrate 40 may be referred to as an interposer in such embodiments. In embodiments, the area of ​​the main surface of the packaging substrate 40 may be equal to or greater than 3600 mm². 2 .

[0025] A via (sometimes called a substrate via (TSV)) 24 may be formed extending from the first surface 72 into the substrate 70. When formed in a silicon substrate, the TSV 24 is sometimes also called a silicon via. Although Figure 3 Not shown, but each TSV 24 may be surrounded by an isolation pad formed of a dielectric material, such as silicon oxide, silicon nitride, etc. The isolation pad isolates the respective TSV 24 from the substrate 70.

[0026] A redistribution structure 76 for electrical connection to TSV 24 is formed over a first surface 72 of substrate 70. The redistribution structure 76 also serves to electrically connect integrated circuit devices (if any) to external devices. The redistribution structure 76 may include one or more dielectric layers and corresponding metallization patterns within the dielectric layers. The metallization patterns may include vias and / or traces to interconnect any devices and / or interconnect to external devices. Metallization patterns are sometimes referred to as redistribution lines (RDLs). The dielectric layer may include silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, low-k dielectric materials such as PSG, BPSG, FSG, and SiO2. x C y Spin-coated glass, spin-coated polymers, silicon-carbon materials, their compounds, their composites, combinations thereof, etc. The dielectric layer can be deposited by any suitable method known in the art, such as spin coating, CVD, PECVD, HDP-CVD, etc. Metallization patterns can be formed in the dielectric layer, for example, by using photolithography to deposit and pattern a photoresist material on the dielectric layer to expose portions of the dielectric layer that will become metallized patterns. Etching processes such as anisotropic dry etching can be used to create grooves and / or openings in the dielectric layer corresponding to the exposed portions of the dielectric layer. The grooves and / or openings can be lined with a diffusion barrier layer and filled with a conductive material. The diffusion barrier layer can include one or more layers of TaN, Ta, TiN, Ti, CoW, etc., deposited by ALD, etc., and the conductive material can include copper, aluminum, tungsten, silver, and combinations thereof, deposited by CVD, PVD, plating processes, etc. Any excess diffusion barrier layer and / or conductive material on the dielectric layer can be removed, for example, by using CMP.

[0027] Electrical connections 77 are formed at the top surface of the redistribution structure 76 on the conductive pads. In some embodiments, the conductive pads include under-bump metal (UBM). In the illustrated embodiment, the pads are formed in openings in the dielectric layer of the redistribution structure 76. In another embodiment, the pads (UBM) may extend through openings in the dielectric layer of the redistribution structure 76 and also extend across the top surface of the redistribution structure 76. As an example of forming conductive pads, a seed layer (not shown) is formed at least in openings in the dielectric layer of the redistribution structure 76. In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising multiple sublayers formed of different materials. In some embodiments, the seed layer includes a titanium layer and a copper layer above the titanium layer. The seed layer can be formed using, for example, PVD. Photoresist is then formed and patterned on the seed layer. The photoresist can be formed by spin coating or the like and can be exposed to light for patterning. The pattern of the photoresist corresponds to the pads. Patterning forms openings through the photoresist to expose the seed layer. Conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material can be formed by plating (such as electroplating, electroless plating, etc.). The conductive material can include metals such as copper, titanium, tungsten, aluminum, etc. Then, the photoresist and the portions of the seed layer on which no conductive material has formed are removed. The photoresist can be removed by an acceptable ashing or stripping process, such as using oxygen plasma. Once the photoresist is removed, the exposed portions of the seed layer are removed, for example by using an acceptable etching process, such as by wet etching or dry etching. The remaining portions of the seed layer and conductive material form pads. In embodiments where pads are formed differently, more photoresist and patterning steps may be utilized.

[0028] In an embodiment, the electrical connector 77 is then formed on a conductive pad and may include solder balls and / or bumps, such as microbumps, controlled collapse chip connections (C4), electroless nickel immersion gold (ENIG), electroless nickel immersion gold (ENEPIG), etc. In an embodiment, the electrical connector 77 is formed by initially forming a patterned solder layer using suitable methods, such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the patterned solder layer has been structurally formed, reflow can be performed to shape the material into the desired bump shape. In an embodiment, the bump electrical connector 77 may include conductive materials such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc., or combinations thereof.

[0029] exist Figure 4 In this embodiment, the electrical connectors 77 of the encapsulation substrate 40 are coated with flux 78, such as a no-clean flux. In some embodiments, the electrical connectors 77 may be immersed in flux 78 or the flux 78 may be sprayed onto the electrical connectors 77.

[0030] Figure 5A thermocompression bonding (TCB) head 81 and a vacuum chuck stage 82 of a thermocompression bonding (TCB) apparatus are shown. The TCB head 81 may include one or more vacuum channels for creating a first vacuum force 83, such that the TCB head 81 can be used to pick up and hold a first workpiece (e.g., a die 68), such as... Figure 5 As shown in the diagram. The function, position, and vacuum force 83 of the TCB connector 81 can be adjustable, allowing for vertical movement of the TCB connector 81. Similarly, the vacuum chuck stage 82 can include one or more vacuum channels for creating a second vacuum force 85, such that the vacuum chuck stage 82 can be used to hold a second workpiece (e.g., a package substrate 40), as... Figure 5 As shown in the image.

[0031] exist Figure 6A In this embodiment, the TCB connector 81 can be used to pick up the die 68 and place the die 68 on the package substrate 40, thereby bringing the electrical connector 77 and the die connector 66 into contact. After the die 68 is placed on the package substrate 40, the TCB connector 81 remains in contact with the die 68, and an upward force can be applied to the die 68 due to the vacuum force 83. The position of the TCB connector 81 relative to the vacuum chuck stage 82 can be maintained such that the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it is equal to a first height H1. The TCB connector 81 is then heated and heat can be provided to the die 68 in a heating process 87, which causes the backflow of the electrical connector 77 and the engagement of the electrical connector 77 to the die connector 66 through thermal conduction. In an embodiment, the TCB connector 81 includes a coil (not shown) that heats up when current flows through it. In an embodiment, heating process 87 can heat the TCB connector 81 and die 68 to a temperature ranging from 25°C to 400°C. In an embodiment, heating process 87 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. During heating process 87, and during the melting of electrical connector 77, the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 66 is maintained at a first height H1 by holding the TCB connector 81 in a fixed vertical position relative to the vacuum chuck stage 82. In an embodiment, the first height H1 can range from 5 μm to 60 μm. In an embodiment, the first height H1 can be as high as 100 μm.

[0032] Figure 6B The above demonstrates the implementation of... Figure 6A A cross-sectional view of the device package 1000 after the reflow and heating processes described in section 87. Figure 6C It shows Figure 6BAn enlarged view of region 93 is shown. The height between the topmost surface of each die connector 66 and the bottommost surface of its corresponding electrical connector 77 is equal to a first height H1. Because... Figure 6A The heating process 87 shown maintains a first height H1, thus forming a cylindrical connector 42 that maintains a uniform first width W1 throughout the entire first height H1. For example, a die connector 66 can have a cylindrical shape with a uniform width equal to the first width W1, and a return electrical connector 77 can also have a cylindrical shape with a uniform width equal to the first width W1. According to some embodiments, flux 78 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 1000.

[0033] Electrical connector 77 is melted in a conventional reflow process without controlling the spacing between the die and substrate, and then solidified. The spacing between the die and substrate, or between two substrates in a package, may change due to gravity and the coefficient of thermal expansion. Convection reflow can cause deformation or warping.

[0034] Advantages can be achieved due to the formation of the device package 1000, wherein the package substrate 40 is bonded to the die 68 using electrical connectors 77 on the package substrate 40 (using thermocompression bonding (TCB) reflow). The thermocompression bonding (TCB) apparatus includes a TCB connector 81 that provides a vacuum force 83 to hold the die 68 and a vacuum chuck stage 82 that provides a vacuum force 85 to hold the package substrate 40. During the bonding of the package substrate 40 to the die 68, a heating process 87 is performed to reflow the electrical connectors 77, wherein the TCB connector 81 provides heat to reflow the electrical connectors 77. During the heating process 87, a first height H1 between the topmost surface of the die connector 66 and the bottommost surface of the electrical connector 77 remains constant to allow the formation of the cylindrical connector 42. Advantages may include improved coplanarity (COP) of the device package 1000 and prevention of deformation or warping of the die 68 and package substrate 40 due to the vacuum forces 83 and 85 present during the heating process 87. When the encapsulation substrate 40 and the component package 44 are bonded together, this increased coplanarity and reduced warpage further allow the encapsulation substrate 40 and another component package 44 (e.g., below) to be bonded together. Figure 8 The improved connection between the printed circuit boards (described in the text).

[0035] exist Figure 7In this process, underfill material 100 is distributed into the gap between the die 68 and the redistribution structure 76. In some embodiments, underfill material 100 may extend upward along the sidewall of the die 68. Underfill material 100 may be any acceptable material, such as polymers, epoxy resins, molded underfill materials, etc. Underfill material 100 may be formed after attachment to die 68 by a capillary flow process, or it may be formed before attachment to die 68 by a suitable deposition method.

[0036] In subsequent steps, planarization steps such as CMP or mechanical polishing are performed to thin the substrate 70 of the packaging substrate 40. According to some embodiments of the invention, the planarization process is performed until the via 24 is exposed through the second surface 172 of the substrate 70.

[0037] Then, a via 24 can be formed over the second surface 172 of the substrate 70 for electrically connecting the via 24 to the subsequently bonded component package 44. Figure 8 The redistribution structure 102 (described herein) may include one or more dielectric layers and corresponding metallization patterns in the dielectric layers. The metallization patterns may include vias and / or traces to interconnect vias 24 to external devices. The metallization patterns are sometimes referred to as redistribution lines (RDLs).

[0038] According to some embodiments of the invention, a dielectric layer 25, comprising a polymer such as PBO, polyimide, etc., may be formed over the second surface 172. The formation method may include coating the dielectric layer 25 in a flowable form and then curing the dielectric layer 25. According to some embodiments of the invention, the dielectric layer 25 may be formed from an inorganic dielectric material such as silicon nitride, silicon oxide, etc. The formation method may include chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), or other suitable deposition methods. An opening is then formed in the dielectric layer 25, for example, by a photolithography process that exposes a via 24 through the opening.

[0039] Next, RDL 104 is formed, which may include vias formed in openings in dielectric layer 25 to contact vias 24, and metal traces (metal lines) above dielectric layer 25. According to some embodiments of the invention, RDL 104 is formed in a plating process comprising: depositing a metal seed layer (not shown); forming and patterning photoresist (not shown) over the metal seed layer; and plating a metal material such as copper and / or aluminum over the metal seed layer. The metal seed layer and the plated metal material may be formed of the same material or different materials. The patterned photoresist is then removed, followed by etching of the portion of the metal seed layer previously covered by the patterned photoresist.

[0040] In an embodiment, one or more dielectric layers may be formed over dielectric layer 25. In an embodiment, one or more RDLs connected to RDL 104 may be formed over RDL 104. The one or more dielectric layers may be formed using materials selected from the same or different groups of candidate materials for forming dielectric layer 25, including PBO, polyimide, BCB, or other organic or inorganic materials. The materials and formation process of the one or more RDLs may be the same as those for forming RDL 104, including: forming a seed layer; forming a patterned mask; depositing each of the one or more RDLs; and then removing unwanted portions of the patterned mask and seed layer.

[0041] Figure 7 The formation of electrical connections 106, such as conductive pillars, conductive bumps, etc., formed in and / or on the redistribution structure 102 is also shown to provide external electrical connections to circuitry and devices within the redistribution structure 76 and on the first surface 72 via the TSV 24. In an embodiment, the electrical connections 106 are formed in openings in the dielectric layer of the redistribution structure 102. Each electrical connection 106 extends through an opening in the topmost dielectric layer of the redistribution structure 102 to contact a conductive pad (e.g., RDL 104 of the redistribution structure 102). The material and forming process of the electrical connections 106 can be similar to those previously used in... Figure 1 The core connector 66 described herein is formed in the same manner. Therefore, the process steps and applicable materials will not be repeated here.

[0042] exist Figures 8 to 11 In this configuration, component package 44 is attached to package substrate 40. Component package 44 may include a printed circuit board, such as a laminated substrate formed as a stack of multiple thin layers (or laminates) of a polymer material (such as bismaleimide triazine (BT), FR-4, ABF, etc.). However, any other suitable substrate may also be used, such as a silicon interposer, silicon substrate, organic substrate, ceramic substrate, etc. Figure 8 As shown, component package 44 may include electrical connectors 108, which may include solder balls and / or bumps, such as bumps formed by controlled collapse chip connection (C4), electroless nickel immersion gold (ENIG), electroless nickel immersion gold (ENEPIG), etc. In embodiments, electrical connectors 108 are formed by initially forming a solder layer using suitable methods, such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once structurally and with the solder layer formed, reflow can be performed to shape the material into the desired bump shape. In embodiments, bump electrical connectors 108 may include conductive materials such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc., or combinations thereof.

[0043] exist Figure 9In this embodiment, the electrical connector 108 of the component package 44 is coated with flux 178, such as a no-clean flux. The electrical connector 108 can be immersed in the flux 178 or the flux 178 can be sprayed onto the electrical connector 108. In another embodiment, the flux 178 can also be applied to the electrical connector 108. The TCB connector 81 can then be used for pickup. Figure 7 The device package 1000 shown is used to place the device package 1000 on the component package 44, thereby bringing electrical connectors 108 and 106 into contact. A vacuum chuck stage 82 can be used to hold the component package 44. After the device package 1000 is placed on the component package 44, a TCB connector 81 remains in contact with the device package 1000, and an upward force can be applied to the device package 1000 due to a vacuum force 83. The position of the TCB connector 81 relative to the vacuum chuck stage 82 can be maintained such that the height between the top surface of each electrical connector 106 and the bottom surface of the corresponding electrical connector 108 in contact with it is equal to a second height H2. The TCB connector 81 is then heated and heat can be provided to the device package 1000 in a heating process 87, which causes the reflow of electrical connectors 108 and the engagement of electrical connectors 108 to electrical connectors 106 through thermal conduction. In an embodiment, the vacuum chuck stage 82 may also be heated, and heat may be supplied to the component package 44 in heating process 89. In an embodiment, the vacuum chuck stage 82 includes a coil (not shown) that heats when current flows through it. In an embodiment, heating process 89 may heat the vacuum chuck stage 82 to a temperature ranging from 25°C to 400°C. In an embodiment, heating process 89 may be implemented for a duration ranging from 0.1 seconds to 300 seconds. During heating processes 87 and 89, and during the melting of electrical connectors 108, the height between the top surface of each electrical connector 106 and the bottom surface of the corresponding electrical connector 108 is maintained at a second height H2 by holding the TCB joint 81 in a fixed vertical position. In an embodiment, the second height H2 may range from 40 μm to 130 μm. In an embodiment, the second height H2 is at least 10 μm.

[0044] Figure 10 The above demonstrates the implementation of... Figure 9 The cross-sectional view of the device package 1000 after implementing the reflow process and heating processes 87 and 89 as described in the figure. Figure 11 It shows Figure 10 An enlarged view of region 94 is shown. The height between the top surface of each electrical connector 106 and the bottom surface of its corresponding electrical connector 108 is equal to the second height H2. Because... Figure 9During the heating processes 87 and 89 shown, the second height H2 is maintained, thus forming a cylindrical connector 142 having a uniform second width W2 over the entire second height H2. For example, electrical connector 106 may have a cylindrical shape with a uniform width equal to the second width W2, and reflow electrical connector 108 may similarly have a cylindrical shape with a uniform width equal to the second width W2. According to some embodiments, flux 178 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 1000.

[0045] An underfill material (not shown) can be distributed between the component package 44 and the package substrate 40. The underfill material can be any acceptable material, such as a polymer, epoxy resin, molded underfill material, etc. In an alternative embodiment, the component package 44 is subsequently... Figures 12E to 12H The material is attached to the packaging substrate 40 in the manner described herein. Therefore, the process steps and applicable materials will not be repeated here.

[0046] Figure 12A , Figure 12B , Figure 12C and Figure 12D A cross-sectional view is shown of an intermediate stage in the manufacture of a semiconductor device package 2000 according to some embodiments. The device package 2000 is another embodiment in which, in... Figures 1 to 11 In the embodiments shown, the same reference numerals denote the same components unless otherwise stated. Therefore, process steps and applicable materials are not repeated here. The initial steps of this embodiment are the same as those in the previous embodiment. Figures 1 to 5 The two are essentially the same.

[0047] exist Figure 12AIn this embodiment, the TCB connector 81 can be used to pick up the die 68 and place the die 68 on the packaging substrate 40, thereby bringing the electrical connector 77 and the die connector 66 into contact. After the die 68 is placed on the packaging substrate 40, the TCB connector 81 remains in contact with the die 68 and can apply an upward force to the die 68 due to the vacuum force 83. After the electrical connector 77 and the die connector 66 begin to contact, the position of the TCB connector 81 relative to the vacuum chuck stage 82 is such that the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it is equal to a third height H3. The TCB connector 81 is then heated and heat can be provided to the die 68 in a heating process 87, which causes the reflow of the electrical connector 77 and the engagement of the electrical connector 77 to the die connector 66 through thermal conduction. In an embodiment, the TCB connector 81 includes a coil (not shown) that heats up when current flows through it. In an embodiment, heating process 87 can heat the TCB connector 81 and die 68 to a temperature ranging from 25°C to 400°C. In an embodiment, heating process 87 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. During heating process 87 and during the melting of electrical connector 77, the height between the topmost surface of each die connector 66 and the bottommost surface of the corresponding electrical connector 66 in contact with it is adjusted to a fourth height H4, as... Figure 12B As shown in the diagram. This can be implemented by vertically adjusting the height of the TCB connector 81 relative to the vacuum chuck stage 82. In some embodiments, the fourth height H4 can be greater than the third height H3. For example, the distance between the topmost surface of the die connector 66 and the bottommost surface of the electrical connector 77 can be increased. In embodiments, the third height H3 can be in the range of 5 μm to 60 μm, and the fourth height H4 can be in the range of 7 μm to 70 μm. In embodiments, the third height H3 can be up to 100 μm. In embodiments, the fourth height H4 can be up to 100 μm.

[0048] Figure 12C The above demonstrates the implementation of... Figure 12A and Figure 12B A cross-sectional view of the device package 2000 after the reflow and heating processes described in section 87. Figure 12D It shows Figure 12C The enlarged view of region 95 shown. The height between the topmost surface of each die connector 66 and the bottommost surface of its corresponding electrical connector 77 is equal to the fourth height H4. Because... Figure 12A and Figure 12B During the heating process 87 shown, the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 is adjusted (e.g., increased) from the third height H3 to the fourth height H4, thus forming an hourglass connector 46.

[0049] The hourglass connector 46 includes a core connector 66 and an electrical connector 77. The core connector 66 may have a cylindrical shape with a uniform third width W3. The electrical connector 77 may include an hourglass shape, with a first portion having a fourth width W4, a second portion having a fifth width W5, and a third portion having a sixth width W6. The second portion of the electrical connector 77 may be located between the first and third portions. In some embodiments, the fifth width W5 is smaller than the fourth width W4 and the sixth width W6. In some embodiments, the third width W3, the fourth width W4, and the sixth width W6 are equal. In some embodiments, the electrical connector 77 may include curved, concave sidewalls.

[0050] In one embodiment, the third portion of the electrical connector 77 may extend through the solder mask layer 110 on the redistribution structure 76, such as Figure 12D As shown in the diagram. The third portion of the electrical connector 77 located in the solder mask layer 110 can always have a substantially uniform width, and the width of the electrical connector 77 can continuously decrease in the direction toward the midpoint between the bottom surface of the die connector 66 and the top surface of the solder mask layer 110. Furthermore, the curved, concave sidewalls of the electrical connector 77 can continuously extend from the top surface of the solder mask layer 110 to the bottom surface of the die connector 66. In an embodiment, the third width W3, the fourth width W4, and the sixth width W6 are not equal (e.g., as shown in the diagram). Figure 12I (As shown in the diagram). In an embodiment, one of the third width W3, the fourth width W4, and the sixth width W6 is not equal to the other two widths. In an embodiment, the electrical connector 77 may include sidewalls with different curvatures from each other (e.g., as shown in the diagram). Figure 12J (as shown in the diagram). In an embodiment, one or more of the sidewalls of the die connector 66, the first portion of the electrical connector 77, and the third portion of the electrical connector 77 may be curved or inclined (e.g., as shown in the diagram). Figure 12K (As shown in the diagram). In embodiments where the third portion of the electrical connector 77 is bent or angled, the third portion of the electrical connector 77 may extend through the solder mask 110 on the redistribution structure 76. According to some embodiments, the flux 78 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 2000. The next step in this embodiment is similar to that described above. Figure 7 The steps described herein will not be repeated here.

[0051] Advantages are achieved due to the formation of the device package 2000, wherein the package substrate 40 is bonded to the die 68 using electrical connectors 77 on the package substrate 40 (using thermocompression bonding (TCB) reflow). The thermocompression bonding (TCB) apparatus includes a TCB connector 81 that provides a vacuum force 83 to hold the die 68 and a vacuum chuck stage 82 that provides a vacuum force 85 to hold the package substrate 40. During the bonding of the package substrate 40 to the die 68, a heating process 87 is performed to reflow the electrical connectors 77, wherein the TCB connector 81 provides heat to reflow the electrical connectors 77. During the heating process 87, a third height H3 between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it is adjusted and increased to a fourth height H4 to allow the formation of an hourglass connector 46. Advantages may include improved coplanarity (COP) of the device package 2000 and prevention of deformation or warping of the die 68 and package substrate 40 due to vacuum forces 83 and 85 present during the heating process 87. This improved coplanarity and reduced warping further allow the package substrate 40 and another component package 44 (e.g., as described above) to be bonded together. Figure 8 The improved connection between the printed circuit boards (described in the text).

[0052] exist Figures 12E to 12H In the middle, component package 44 (previously in Figure 8 (As described in the text) Attached to the packaging substrate 40. In Figure 12E In this embodiment, the electrical connector 108 of the component package 44 is coated with flux 178, such as a no-clean flux. The electrical connector 108 can be immersed in the flux 178 or the flux 178 can be sprayed onto the electrical connector 108. In another embodiment, the flux 178 can also be applied to the electrical connector 108. The TCB connector 81 can then be used for pickup. Figure 12CThe device package 2000 shown is used to place the device package 2000 on the component package 44, thereby bringing electrical connectors 108 and 106 into contact. A vacuum chuck stage 82 can be used to hold the component package 44. After the device package 2000 is placed on the component package 44, a TCB connector 81 remains in contact with the device package 2000, and an upward force can be applied to the device package 2000 due to a vacuum force 83. After the electrical connectors 108 and 106 begin to contact, the position of the TCB connector 81 relative to the vacuum chuck stage 82 is such that the height between the top surface of each electrical connector 106 and the bottom surface of the corresponding electrical connector 108 in contact with it is equal to a fifth height H5. The TCB connector 81 is then heated and heat can be provided to the device package 2000 in a heating process 87, which causes the reflow of electrical connectors 108 and the engagement of electrical connectors 108 to electrical connectors 106 through thermal conduction. In an embodiment, the vacuum chuck stage 82 can also be heated, and heat can be supplied to the component package 44 in the heating process 89. In an embodiment, the vacuum chuck stage 82 includes a coil (not shown) that heats when current flows through it. In an embodiment, the heating process 89 can heat the vacuum chuck stage 82 to a temperature ranging from 25°C to 400°C. In an embodiment, the heating process 89 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. During heating processes 87 and 89, and during the melting of electrical connectors 108, the height between the topmost surface of each electrical connector 66 and the bottommost surface of the corresponding electrical connector 108 in contact with it is adjusted to a sixth height H6, as shown. Figure 12F As shown in the diagram. This can be implemented by vertically adjusting the height of the TCB connector 81 relative to the vacuum chuck stage 82. In some embodiments, the sixth height H6 can be greater than the fifth height H5. For example, the distance between the top surface of the electrical connector 106 and the bottom surface of the electrical connector 108 can be increased. In embodiments, the fifth height H5 can be in the range of 40 μm to 130 μm, and the sixth height H6 can be in the range of 45 μm to 150 μm. In embodiments, the fifth height H5 can be at least 10 μm. In embodiments, the sixth height H6 can be at least 10 μm.

[0053] Figure 12G The above demonstrates the implementation of... Figure 12E and Figure 12F The cross-sectional view of the device package 2000 after the reflow process and heating processes 87 and 89 described in the figure. Figure 12H It shows Figure 12G The enlarged view of region 195 shown. The height between the top surface of each electrical connector 106 and the bottom surface of its corresponding electrical connector 108 is equal to the sixth height H6. Because... Figure 12E and Figure 12FDuring the heating processes 87 and 89 shown, the height between the top surface of each electrical connector 106 and the bottom surface of the corresponding electrical connector 108 is adjusted from a fifth height H5 to a sixth height H6, thus forming an hourglass connector 146. The hourglass connector 146 includes electrical connectors 106 and 108. Electrical connector 106 may include a cylinder having a uniform seventh width W7. Electrical connector 108 may include an hourglass shape, with a first portion having an eighth width W8, a second portion having a ninth width W9, and a third portion having a tenth width W10. The second portion of electrical connector 108 may be located between the first and third portions. In some embodiments, the ninth width W9 is smaller than the eighth width W8 and the tenth width W10. In some embodiments, the seventh width W7, the eighth width W8, and the tenth width W10 are equal. In some embodiments, electrical connector 108 may include curved, concave sidewalls. In one embodiment, the third portion of the electrical connector 108 may extend through the solder mask layer 110 on the component package 44, such as Figure 12H As shown in the diagram. The third portion of the electrical connector 108 located in the solder mask layer 110 may have a substantially uniform width, and the width of the electrical connector 108 may continuously decrease in the direction toward the midpoint between the bottom surface of the electrical connector 106 and the top surface of the solder mask layer 110. Furthermore, the curved, concave sidewalls of the electrical connector 108 may continuously extend from the top surface of the solder mask layer 110 to the bottom surface of the electrical connector 106. In the embodiment, the seventh width W7, the eighth width W8, and the tenth width W10 are not equal (e.g., as shown in the diagram). Figure 12L (As shown in the diagram). In an embodiment, one of the seventh width W7, the eighth width W8, and the tenth width W10 is not equal to the other two widths. In an embodiment, the electrical connector 108 may include sidewalls with different curvatures from each other (e.g., as shown in the diagram). Figure 12M (as shown in the illustration). In an embodiment, the sidewalls of one or more of the electrical connector 106, the first portion 108 of the electrical connector, and the third portion 108 of the electrical connector may be curved or inclined (e.g., as shown in the illustration). Figure 12N (As shown in the diagram). In embodiments where the third portion of the electrical connector 108 is bent or angled, the third portion of the electrical connector 108 may extend through the solder mask 110 on the component package 44. According to some embodiments, the flux 178 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 2000. An underfill material (not shown) may be distributed between the component package 44 and the package substrate 40. The underfill material may be any acceptable material, such as polymers, epoxy resins, molded underfill materials, etc. In an alternative embodiment, the component package 44 (previously in...) Figure 8 (as described in) can be used Figures 8 to 11The steps described herein are for attaching to the packaging substrate 40. Therefore, the process steps and applicable materials will not be repeated here.

[0054] Figure 13A , Figure 13B and Figure 13C A cross-sectional view is shown of an intermediate stage in the manufacture of a semiconductor device package 3000 according to some embodiments. The device package 3000 is another embodiment in which, in... Figures 1 to 11 In the embodiments shown, the same reference numerals denote the same components unless otherwise stated. Therefore, process steps and applicable materials are not repeated here. The initial steps of this embodiment are the same as those in the previous embodiment. Figures 1 to 5 The two are essentially the same.

[0055] exist Figure 13A In this embodiment, the TCB connector 81 can be used to pick up the die 68 and place the die 68 on the package substrate 40, thereby bringing the electrical connector 77 and the die connector 66 into contact. After the die 68 is placed on the package substrate 40, the TCB connector 81 remains in contact with the die 68, and an upward force can be applied to the die 68 due to the vacuum force 83. The position of the TCB connector 81 relative to the vacuum chuck stage 82 can be maintained such that the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it is equal to a seventh height H7. The TCB connector 81 is then heated and heat can be supplied to the die 68 in heating process 87, and the vacuum chuck stage 82 is also heated and heat can be supplied to the package substrate 40 in heating process 89. Heating processes 87 and 89 can cause the reflow of the electrical connector 77 and the engagement of the electrical connector 77 to the die connector 66 by thermal conduction. In an embodiment, the TCB connector 81 includes a coil (not shown) that heats up when current flows through it. In an embodiment, heating process 87 can heat the TCB connector 81 and die 68 to a temperature ranging from 25°C to 400°C. In an embodiment, heating process 87 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. In an embodiment, the vacuum chuck stage 82 includes a coil (not shown) that is heated when current flows through it. In an embodiment, heating process 89 can heat the vacuum chuck stage 82 to a temperature ranging from 25°C to 400°C. In an embodiment, heating process 89 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. During heating processes 87 and 89, and during the melting of the electrical connector 77, the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 66 is maintained at a seventh height H7 by holding the TCB connector 81 in a fixed vertical position relative to the vacuum chuck stage 82. In an embodiment, the seventh height H7 can be in the range of 5 μm to 60 μm. In an embodiment, the seventh height H7 can be as high as 100 μm.

[0056] Figure 13B The above demonstrates the implementation of... Figure 13A The cross-sectional view of the device package 3000 after the reflow process and heating processes 87 and 89 described in the figure. Figure 13C It shows Figure 13B An enlarged view of region 97 is shown. The height between the top surface of each die connector 66 and the bottom surface of its corresponding electrical connector 77 is equal to the seventh height H7. Because... Figure 13A During the heating processes 87 and 89 shown, the seventh height H7 is maintained, thus forming a cylindrical connector 48 having a uniform eleventh width W11 across the entire seventh height H7. For example, the die connector 66 can have a cylindrical shape with a uniform width equal to the eleventh width W11, and the reflow electrical connector 77 can also have a cylindrical shape with a uniform width equal to the eleventh width W11. According to some embodiments, the flux 78 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 3000. The next step of this embodiment is... Figure 7 The basic principles are the same as those shown. Therefore, the process steps and applicable materials will not be repeated here.

[0057] In Figure 7 After the redistribution structure 102 and electrical connector 106 are formed in the manner described in the diagram, the component package 44 (previously in...) Figure 8 (As described in the text) Attached to the packaging substrate 40. In an embodiment, the component package 44 is... Figures 8 to 11 The component package 44 is attached to the packaging substrate 40 in the manner described herein. In an alternative embodiment, the component package 44 is attached to the packaging substrate 40 in the manner described herein. Figures 12E to 12H The material is attached to the packaging substrate 40 in the manner described herein. Therefore, the process steps and applicable materials will not be repeated here.

[0058] Advantages are achieved due to the formation of the device package 3000, wherein the package substrate 40 is bonded to the die 68 using electrical connectors 77 on the package substrate 40 (using thermocompression bonding (TCB) reflow). The thermocompression bonding (TCB) apparatus includes a TCB connector 81 that provides a vacuum force 83 to hold the die 68 and a vacuum chuck stage 82 that provides a vacuum force 85 to hold the package substrate 40. During bonding of the package substrate 40 to the die 68, heating processes 87 and 89 are performed to reflow the electrical connectors 77, wherein the TCB connector 81 and the vacuum chuck stage 82 provide heat to reflow the electrical connectors 77. During heating processes 87 and 89, a seventh height H7 between the top surface of the die connector 66 and the bottom surface of the electrical connector 77 remains constant to allow the formation of the cylindrical connector 48. Advantages may include improved coplanarity (COP) of the device package 3000 and prevention of deformation or warping of the die 68 and package substrate 40 due to vacuum forces 83 and 85 present during heating processes 87 and 89. This improved coplanarity and reduced warping further allow the package substrate 40 and another component package 44 (e.g., as described above) to be bonded together. Figure 8 The improved connection between the printed circuit boards (described in the text).

[0059] Figure 14A , Figure 14B , Figure 14C and Figure 14D A cross-sectional view is shown of an intermediate stage in the manufacture of a semiconductor device package 4000 according to some embodiments. The device package 4000 is another embodiment in which, in... Figures 1 to 11 In the embodiments shown, the same reference numerals denote the same components unless otherwise stated. Therefore, process steps and applicable materials are not repeated here. The initial steps of this embodiment are the same as those in the previous embodiment. Figures 1 to 5 The two are essentially the same.

[0060] exist Figure 14AIn this process, the TCB connector 81 can be used to pick up the die 68 and place it on the packaging substrate 40, thereby bringing the electrical connector 77 and the die connector 66 into contact. After the die 68 is placed on the packaging substrate 40, the TCB connector 81 remains in contact with the die 68, and an upward force can be applied to the die 68 due to the vacuum force 83. After the electrical connector 77 and the die connector 66 begin to contact, the position of the TCB connector 81 relative to the vacuum chuck stage 82 is such that the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it is equal to an eighth height H8. The TCB connector 81 is then heated and can provide heat to the die 68 in heating process 87, and the vacuum chuck stage 82 is also heated and can provide heat to the packaging substrate 40 in heating process 89. Heating processes 87 and 89 can cause the reflow of the electrical connector 77 and the engagement of the electrical connector 77 to the die connector 66 through thermal conduction. In one embodiment, the TCB connector 81 includes a coil (not shown) that heats when current flows through it. In one embodiment, heating process 87 can heat the TCB connector 81 to a temperature ranging from 25°C to 400°C. In one embodiment, heating process 87 can be implemented for a duration ranging from 0.1 seconds to 300 seconds. In one embodiment, the vacuum chuck stage 82 includes a coil (not shown) that heats when current flows through it. In one embodiment, heating process 89 can heat the vacuum chuck stage 82 to a temperature ranging from 25°C to 400°C. In one embodiment, heating process 89 can be implemented for a duration ranging from 0.1 seconds to 400 seconds. During heating processes 87 and 89, and during the melting of the electrical connector 77, the height between the topmost surface of each die connector 66 and the bottommost surface of the corresponding electrical connector 66 in contact with it is adjusted to a ninth height H9, as... Figure 14B As shown. This can be implemented by vertically adjusting the height of the TCB connector 81 relative to the vacuum chuck stage 82. In some embodiments, the ninth height H9 can be greater than the eighth height H8. For example, the distance between the top surface of the die connector 66 and the bottom surface of the electrical connector 77 can be increased. In embodiments, the eighth height H8 can be in the range of 5 μm to 60 μm, and the ninth height H9 can be in the range of 7 μm to 70 μm. In embodiments, the eighth height H8 can be up to 100 μm. In embodiments, the ninth height H9 can be up to 100 μm.

[0061] Figure 14C The above demonstrates the implementation of... Figure 14A and Figure 14B The cross-sectional view of the device package 4000 after the reflow process and heating processes 87 and 89 described in the figure. Figure 14D It shows Figure 14CThe enlarged view of region 99 shown. The height between the top surface of each die connector 66 and the bottom surface of its corresponding electrical connector 77 is equal to the ninth height H9. Because... Figure 14A and Figure 14B During the heating processes 87 and 89 shown, the height between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 is adjusted from an eighth height H8 to a ninth height H9, thus forming an hourglass connector 50. The hourglass connector 50 includes die connectors 66 and electrical connectors 77. Die connectors 66 may include a cylinder having a uniform twelfth width W12. Electrical connectors 77 may include an hourglass shape, with a first portion having a thirteenth width W13, a second portion having a fourteenth width W14, and a third portion having a fifteenth width W15. The second portion of electrical connector 77 may be located between the first and third portions. In some embodiments, the fourteenth width W14 is smaller than the thirteenth width W13 and the fifteenth width W15. In some embodiments, the twelfth width W12, the thirteenth width W13, and the fifteenth width W15 are equal. In some embodiments, electrical connector 77 may include curved, concave sidewalls. In one embodiment, the third portion of the electrical connector 77 may extend through the solder mask layer 110 on the redistribution structure 76, such as Figure 14D As shown in the diagram. The third portion of the electrical connector 77 located in the solder mask layer 110 can always have a substantially uniform width, and the width of the electrical connector 77 can continuously decrease in the direction toward the midpoint between the bottom surface of the die connector 66 and the top surface of the solder mask layer 110. Furthermore, the curved, concave sidewalls of the electrical connector 77 can continuously extend from the top surface of the solder mask layer 110 to the bottom surface of the die connector 66. In an embodiment, the twelfth width W12, the thirteenth width W13, and the fifteenth width W15 are not equal (e.g., as shown in the diagram). Figure 12O (As shown in the diagram). In an embodiment, one of the twelfth width W12, the thirteenth width W13, and the fifteenth width W15 is not equal to the other two widths. In an embodiment, the electrical connector 77 may include sidewalls with different curvatures from each other (e.g., as shown in the diagram). Figure 12P (as shown in the diagram). In an embodiment, the sidewalls of one or more of the die connector 66, the first portion 77 of the electrical connector, and the third portion 77 of the electrical connector may be curved or inclined (e.g., as shown in the diagram). Figure 12Q (As shown in the diagram). In embodiments where the third portion of the electrical connector 77 is bent or angled, the third portion of the electrical connector 77 may extend through the solder mask 110 on the redistribution structure 76. According to some embodiments, the flux 78 is then removed (or cleaned) using methods that may include spraying solvents, applying deionized (DI) water, heating, and drying the device package 4000. The next step of this embodiment is... Figure 7The process steps and applicable materials are essentially the same as those shown. Therefore, the process steps and applicable materials will not be repeated here.

[0062] In Figure 7 After the redistribution structure 102 and electrical connector 106 are formed in the manner described in the diagram, the component package 44 (previously in...) Figure 8 (As described in the text) Attached to the packaging substrate 40. In an embodiment, the component package 44 is... Figures 8 to 11 The component package 44 is attached to the packaging substrate 40 in the manner described herein. In an alternative embodiment, the component package 44 is attached to the packaging substrate 40 in the manner described herein. Figures 12E to 12H The material is attached to the packaging substrate 40 in the manner described herein. Therefore, the process steps and applicable materials will not be repeated here.

[0063] Advantages are achieved due to the formation of the device package 4000, wherein the package substrate 40 is bonded to the die 68 using electrical connectors 77 on the package substrate 40 (using thermocompression bonding (TCB) reflow). The thermocompression bonding (TCB) apparatus includes a TCB connector 81 that provides a vacuum force 83 to hold the die 68 and a vacuum chuck stage 82 that provides a vacuum force 85 to hold the package substrate 40. During bonding of the package substrate 40 to the die 68, heating processes 87 and 89 are performed to reflow the electrical connectors 77, wherein the TCB connector 81 and the vacuum chuck stage 82 provide heat to reflow the electrical connectors 77. During heating processes 87 and 89, an eighth height H8 between the top surface of each die connector 66 and the bottom surface of the corresponding electrical connector 77 in contact with it increases to a ninth height H9 to allow the formation of an hourglass connector 50. Advantages may include improved coplanarity (COP) of the device package 4000 and prevention of deformation or warping of the die 68 and package substrate 40 due to vacuum forces 83 and 85 present during heating processes 87 and 89. This improved coplanarity and reduced warping further allow the package substrate 40 and another component package 44 (e.g., as described above) to be bonded together. Figure 8 The improved connection between the printed circuit boards (described in the text).

[0064] Embodiments of the present invention have several advantageous features. The embodiments include the formation of a device package comprising one or more semiconductor chips bonded to an interposer and a package substrate bonded to the interposer on a side opposite to the one or more semiconductor chips. The interposer may be bonded to one or more semiconductor chips using semiconductor chips and / or solder bumps on the interposer reflowed using thermal bonding (TCB). During the bonding of the interposer to the semiconductor chips, a heating process is performed to reflow the solder bumps, wherein a TCB bonding head and a vacuum chuck stage provide heat to reflow the solder bumps. During heating, the height of the solder bumps may be maintained to allow the formation of solder bumps with a cylindrical shape, or the height of the solder bumps may be increased to allow the formation of solder bumps with an hourglass shape. Therefore, one or more embodiments disclosed herein allow for improved coplanarity (COP) of the device package and reduced warpage. This improvement in coplanarity and reduced warpage, when the package substrate and the interposer are bonded together, also allows for improved connectivity between the package substrate (e.g., a printed circuit board) and the interposer.

[0065] According to an embodiment, the method includes: attaching a die to a thermocompression bonding (TCB) head by vacuum suction, wherein the die includes a plurality of conductive pillars; attaching a first substrate to a chuck by vacuum suction, wherein the first substrate includes a plurality of solder bumps; contacting a first conductive pillar of the plurality of conductive pillars with a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar with the first solder bump creates a first height between the top surface of the first conductive pillar and the bottom surface of the first solder bump; and bonding the first solder bump to the first conductive pillar to form a first connector, wherein bonding the first solder bump to the first conductive pillar includes heating the TCB head. In an embodiment, the method further includes: spraying flux over the first substrate, wherein the flux coats the plurality of solder bumps on the first substrate; and removing the flux after bonding the first solder bump to the first conductive pillar. In an embodiment, after bonding the first solder bump to the first conductive pillar, the lower portion of the first solder bump extends through the solder mask layer, and the lower portion of the first solder bump always has a uniform width. In one embodiment, during heating of the TCB head, the vertical position of the TCB head relative to the chuck is adjusted such that the top surface of the first conductive post is set at a second height from the bottom surface of the first solder bump, wherein the second height is greater than the first height. In another embodiment, during heating of the TCB head, by maintaining the vertical position of the TCB head relative to the chuck, the height between the top surface of the first conductive post and the bottom surface of the first solder bump is maintained at the first height. In another embodiment, bonding the first solder bump to the first conductive post further includes heating the chuck. In yet another embodiment, the first connector has an hourglass shape.

[0066] According to an embodiment, the method includes: bonding a first side of a first die to a first side of a first substrate, wherein the first substrate includes a first plurality of solder bumps located on the first side of the first substrate, and the first die includes a first plurality of conductive posts located on the first side of the first die, wherein bonding the first side of the first die to the first side of the first substrate includes: attaching the first die to a thermocompression bonding (TCB) head by vacuum suction; attaching the first substrate to a chuck by vacuum suction; adjusting the vertical distance of the TCB head relative to the chuck to initiate contact between a first conductive post of the first plurality of conductive posts and a first solder bump of the first plurality of solder bumps; and heating the TCB head and the chuck to bond the first conductive post to the first solder bump and form a first connector, wherein the vertical distance of the TCB head relative to the chuck increases during heating of the TCB head and the chuck. In an embodiment, after bonding the first conductive post to the first solder bump to form the first connector, the first solder bump includes curved, concave sidewalls. In one embodiment, after the first conductive post is bonded to the first solder bump to form a first connector, the first solder bump and the first conductive post include inclined sidewalls. In another embodiment, after the first conductive post is bonded to the first solder bump, the lower portion of the first solder bump extends through the solder mask layer, and wherein the width of the first solder bump continuously decreases in a direction toward the midpoint between the bottom surface of the first conductive post and the top surface of the solder mask layer. In yet another embodiment, the method further includes bonding a second side of the first substrate to a first side of the component package. In one embodiment, attaching the second side of the first substrate to the first side of the component package includes: attaching a first die and the first substrate to a TCB head by vacuum suction, wherein the first substrate includes a second plurality of conductive pillars located on the second side of the first substrate; attaching the component package to a chuck by vacuum suction, wherein the component package includes a second plurality of solder bumps located on the first side of the component package; adjusting the vertical distance of the TCB head relative to the chuck to initiate contact between a second conductive pillar of the second plurality of conductive pillars and a second solder bump of the second plurality of solder bumps; and heating the TCB head and the chuck to bond the second conductive pillars to the second solder bumps and form a second connector, wherein the vertical distance of the TCB head relative to the chuck is maintained during heating of the TCB head and the chuck.In one embodiment, attaching the second side of the first substrate to the first side of the component package includes: attaching the first die and the first substrate to a TCB head by vacuum suction, wherein the first substrate includes a third plurality of conductive pillars located on the second side of the first substrate; attaching the component package to a chuck by vacuum suction, wherein the component package includes a third plurality of solder bumps located on the first side of the component package; adjusting the vertical distance of the TCB head relative to the chuck to initiate contact between a third conductive pillar of the third plurality of conductive pillars and a third solder bump of the third plurality of solder bumps; and heating the TCB head and the chuck to bond the third conductive pillar to the third solder bump and form a third connector, wherein the vertical distance of the TCB head relative to the chuck increases during heating of the TCB head and the chuck. In one embodiment, after bonding the third conductive pillar to the third solder bump to form the third connector, the third solder bump includes curved, concave sidewalls. In one embodiment, the concave sidewalls of the third solder bump are curved differently from each other.

[0067] According to an embodiment, the package includes: a first die; a first substrate bonded to the first die using a plurality of first conductive connectors, wherein each of the plurality of first conductive connectors includes a first conductive post bonded to a first solder bump, wherein each of the plurality of first conductive connectors includes an hourglass shape, wherein the lower portion of the first solder bump extends through a solder mask layer, and wherein the width of the first solder bump continuously decreases in a direction toward a midpoint between the bottom surface of the first conductive post and the top surface of the solder mask layer; and a second substrate bonded to the first substrate using a plurality of second conductive connectors. In an embodiment, each of the plurality of second conductive connectors includes a second conductive post bonded to a second solder bump, and wherein each of the plurality of second conductive connectors includes an hourglass shape. In an embodiment, each of the plurality of second conductive connectors includes a third conductive post bonded to a third solder bump, wherein the third conductive post has a cylindrical shape with a uniform first width, and the third solder bump has a cylindrical shape with a uniform second width. In an embodiment, the first width is equal to the second width.

[0068] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand aspects of the invention. Those skilled in the art should understand that they can readily use this invention as a basis to design or modify other processes and structures for implementing the same purposes and / or achieving the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of the invention.

Claims

1. A method for manufacturing a package, comprising: The die is attached to the thermo-press joint by vacuum suction, wherein the die includes a plurality of conductive posts; The first substrate is attached to the chuck by vacuum suction, wherein the first substrate includes a plurality of solder bumps; The first conductive post among the plurality of conductive posts is brought into contact with the first solder bump among the plurality of solder bumps, wherein the contact between the first conductive post and the first solder bump creates a first height between the top surface of the first conductive post and the bottom surface of the first solder bump; The first solder bump is bonded to the first conductive post to form a first connector, wherein bonding the first solder bump to the first conductive post includes heating the thermo-pressed joint to reflow the first solder bump; After the first solder bump is bonded to the first conductive post, the first substrate is thinned to expose the vias in the first substrate; and The first substrate is bonded to the first side of the package assembly. Wherein, after the first solder bump is bonded to the first conductive post, the lower part of the first solder bump extends through the solder mask layer, and the upper part of the first solder bump is disposed between the bottom surface of the first conductive post and the top surface of the solder mask layer, wherein each sidewall of the upper part of the first solder bump is curved and includes sidewalls with different curvatures from each other.

2. The method according to claim 1, further comprising: Spraying flux over the first substrate, wherein the flux coats the plurality of solder bumps on the first substrate; and The flux is removed after the first solder bump is bonded to the first conductive post.

3. The method according to claim 1, wherein, The lower portion of the first solder bump always has a uniform width.

4. The method according to claim 1, wherein, During the heating of the thermo-pressed joint, the vertical position of the thermo-pressed joint relative to the chuck is adjusted such that the top surface of the first conductive post is set at a second height from the bottom surface of the first solder bump, wherein the second height is greater than the first height.

5. The method according to claim 1, wherein, During the heating of the thermo-pressed joint, by maintaining the thermo-pressed joint in a vertical position relative to the chuck, the height between the topmost surface of the first conductive post and the bottommost surface of the first solder bump is maintained at the first height.

6. The method according to claim 1, wherein, Bonding the first solder bump to the first conductive post also includes heating the chuck.

7. The method according to claim 1, wherein, The first connector has an hourglass shape.

8. A method for manufacturing a package, comprising: A first side of a first die is bonded to a first side of a first substrate, wherein the first substrate includes a first plurality of solder bumps located on the first side of the first substrate, and the first die includes a first plurality of conductive pillars located on the first side of the first die. The process of bonding the first side of the first die to the first side of the first substrate includes: attaching the first die to a thermoforming head by vacuum suction; attaching the first substrate to a chuck by vacuum suction; adjusting the vertical distance of the thermoforming head relative to the chuck to initiate contact between a first conductive post of the plurality of conductive posts and a first solder bump of the plurality of solder bumps; and heating the thermoforming head and the chuck to bond the first conductive post to the first solder bump and form a first joint, wherein the vertical distance of the thermoforming head relative to the chuck increases during heating of the thermoforming head and the chuck. Wherein, after the first solder bump is bonded to the first conductive post, the first substrate is thinned to expose the vias of the first substrate; and The first substrate is bonded to the first side of the package assembly. Wherein, after the first conductive post is attached to the first solder bump, the lower part of the first solder bump extends through the solder mask layer, and the upper part of the first solder bump is disposed between the bottom surface of the first conductive post and the top surface of the solder mask layer, wherein each sidewall of the upper part of the first solder bump is curved and includes sidewalls that are curved differently from each other.

9. The method according to claim 8, wherein, After the first conductive post is bonded to the first solder bump to form the first connector, the first solder bump includes curved, concave sidewalls.

10. The method according to claim 8, wherein, After the first conductive post is bonded to the first solder bump to form the first connector, the first solder bump and the first conductive post include inclined sidewalls.

11. The method according to claim 8, wherein, The width of the first solder bump decreases continuously in the direction of the midpoint between the bottom surface of the first conductive post and the top surface of the solder resist layer.

12. The method according to claim 8, further comprising: The second side of the first substrate is bonded to the first side of the component package.

13. The method according to claim 12, wherein, Bonding the second side of the first substrate to the first side of the component package includes: The first die and the first substrate are attached to a thermo-press joint by vacuum suction, wherein the first substrate includes a second plurality of conductive pillars located on the second side of the first substrate; The component package is attached to the chuck by vacuum suction, wherein the component package includes a second plurality of solder bumps located on the first side of the component package; Adjusting the vertical distance of the thermocouple relative to the chuck to initiate contact between the second conductive post of the second plurality of conductive posts and the second solder bump of the second plurality of solder bumps; and The thermocompression joint and the chuck are heated to bond the second conductive post to the second solder bump and form a second joint, wherein the vertical distance between the thermocompression joint and the chuck is maintained during the heating of the thermocompression joint and the chuck.

14. The method according to claim 12, wherein, Bonding the second side of the first substrate to the first side of the component package includes: The first die and the first substrate are attached to a thermo-press joint by vacuum suction, wherein the first substrate includes a third plurality of conductive pillars located on the second side of the first substrate; The component package is attached to the chuck by vacuum suction, wherein the component package includes a third plurality of solder bumps located on the first side of the component package; Adjusting the vertical distance of the thermocouple relative to the chuck to initiate contact between the third conductive post of the third plurality of conductive posts and the third solder bump of the third plurality of solder bumps; and The thermocompression joint and the chuck are heated to bond the third conductive post to the third solder bump and form a third joint, wherein, during the heating of the thermocompression joint and the chuck, the vertical distance of the thermocompression joint relative to the chuck is increased in such a way.

15. The method according to claim 14, wherein, After the third conductive post is bonded to the third solder bump to form the third connector, the third solder bump includes curved, concave sidewalls.

16. The method according to claim 15, wherein, The concave sidewalls of the third solder bump are curved differently from each other.

17. A package comprising: First die; A first substrate is bonded to a first die using a plurality of first conductive connectors, wherein each of the plurality of first conductive connectors includes a first conductive post bonded to a first solder bump, wherein each of the plurality of first conductive connectors includes an hourglass shape, wherein the lower portion of the first solder bump extends through a solder mask layer, and wherein the width of the first solder bump continuously decreases in a direction toward the midpoint between the bottom surface of the first conductive post and the top surface of the solder mask layer, wherein vias in the first substrate extend through opposite sides of the first substrate, and wherein the upper portion of the first solder bump is disposed between the bottom surface of the first conductive post and the top surface of the solder mask layer, wherein each sidewall of the upper portion of the first solder bump is curved and includes sidewalls with different curvatures from each other; and The second substrate is bonded to the first substrate using a plurality of second conductive connectors.

18. The package according to claim 17, wherein, Each of the plurality of second conductive connectors includes a second conductive post bonded to a second solder bump, and wherein each of the plurality of second conductive connectors includes an hourglass shape.

19. The package according to claim 17, wherein, Each of the plurality of second conductive connectors includes a third conductive post bonded to a third solder bump, wherein the third conductive post has a cylindrical shape with a uniform first width, and the third solder bump has a cylindrical shape with a uniform second width.

20. The package according to claim 19, wherein, The first width is equal to the second width.

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