Method of manufacturing a mirror device

Abstract

A manufacturing method of a mirror device, wherein the mirror device has a structure including a base portion and a movable portion supported by the base portion, and a mirror layer provided on the movable portion, the manufacturing method of the mirror device includes: a first step of preparing a wafer having a support layer and a device layer; a second step, after the first step, of forming a slit in the wafer in a manner that the movable portion is movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching, and forming a plurality of portions corresponding to the structure, respectively, in the wafer; a third step, after the second step, of performing a wet cleaning of cleaning the wafer by a cleaning liquid; and a fourth step, after the third step, of cutting each of the plurality of portions from the wafer, in the second step, a through-hole passing through the wafer is formed in a part of the wafer other than the slit by etching.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a manufacturing method of a mirror device. BACKGROUND

[0002] As a MEMS (Micro Electro Mechanical Systems) device configured of an SOI (Silicon On Insulator) substrate, there is known a mirror device that has a structure body including a base portion and a movable portion supported by the base portion, and a mirror layer provided to the movable portion. As a manufacturing method of such a mirror device, sometimes after the movable portion is released in a manner that the movable portion is movable with respect to the base portion, the wafer is cleaned by a cleaning liquid (for example, refer to Patent Literature 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2006-334697 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] In the manufacturing method of the mirror device as described above, since the wafer from which the movable portion is released is cleaned by the cleaning liquid, it is possible that damages are generated in the plurality of movable portions due to the load by the cleaning liquid. In order to suppress the generation of such damages, it is considered to weaken the cleaning strength of the cleaning liquid, but in so doing, it is possible that foreign matters remain on the wafer.

[0008] An object of the present disclosure is to provide a manufacturing method of a mirror device that can suppress the generation of damages and the remaining of foreign matters of the mirror device.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] The manufacturing method of a mirror device of one aspect of the present disclosure, wherein the mirror device has a structure including a base portion and a movable portion supported by the base portion, and a mirror layer provided to the movable portion, the manufacturing method of the mirror device includes: a first step of preparing a wafer having a support layer and a device layer; a second step, after the first step, of forming a slit in the wafer in a manner that the movable portion is movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching, and forming a plurality of portions corresponding to the structure in the wafer, respectively; a third step, after the second step, of performing wet cleaning of the wafer by cleaning the wafer with a cleaning liquid; and a fourth step, after the third step, of cutting each of the plurality of portions from the wafer, in the second step, a through-hole is formed in a portion of the wafer other than the slit by etching.

[0011] In the manufacturing method of the mirror device, in the third step, the wafer in a state that the movable portion is movable with respect to the base portion (hereinafter, referred to as "the movable portion is released") is cleaned with the cleaning liquid. Thus, foreign matter can be removed from the wafer in which the plurality of movable portions are released. Here, in the second step, the through-hole is formed in the portion of the wafer other than the slit by etching. Therefore, in the wet cleaning of the third step, the cleaning liquid can flow through the through-hole, and the wafer in which the plurality of movable portions are released is cleaned. Thus, the load on the plurality of movable portions by the cleaning liquid can be reduced, and damage to the plurality of movable portions can be suppressed. Thus, according to the manufacturing method of the mirror device, the generation of damage to the mirror device and the remaining of foreign matter can be suppressed.

[0012] In the manufacturing method of the mirror device of one aspect of the present disclosure, the mirror layer can be formed in the portion of the wafer corresponding to the movable portion in the second step. Thus, foreign matter adhering to the mirror layer can be removed by the wet cleaning of the third step.

[0013] The manufacturing method of the mirror device of one aspect of the present disclosure can further include a fifth step of forming a correction layer to a first surface on which the mirror layer is formed and / or a second surface on the opposite side of the first surface in the surface of the wafer, between the third step and the fourth step. Thus, the foreign matter can be covered with the correction layer.

[0014] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the second process, after the part of the support layer is removed from the wafer, a protective film removal for removing the protective film is performed, and after the protective film removal, the plurality of parts are completed. Thus, it is possible to remove foreign matter adhering to the wafer by the protective film removal of the second process at the time of removing the part of the support layer from the wafer. In addition, it is possible to remove foreign matter and the like remaining on the wafer by the wet cleaning of the third process at the time of removing the protective film.

[0015] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the protective film removal, the protective film is removed according to a wet process. If the protective film is removed according to the wet process, sometimes, for example, a scratch or the like is generated due to unevenness of the device layer. In this case, it is possible to remove the scratch or the like by the wet cleaning of the third process.

[0016] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the second process, a patterning member removal for removing the patterning member is performed, and after the patterning member removal, the plurality of parts are completed. Thus, the patterning member is removed before the plurality of movable portions are released, and therefore, it is possible to suppress generation of damage to the mirror device due to the patterning member removal.

[0017] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the patterning member removal, the patterning member is removed according to a wet process. Thus, since the patterning member is removed before the plurality of movable portions are released, even if the patterning member is removed according to the wet process, it is possible to suppress generation of damage to the mirror device.

[0018] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the second process, a plurality of flow-through holes are formed in parts corresponding to the movable portions. Thus, in the wet cleaning of the third process, since it becomes easy to generate turbulence of the cleaning liquid in the vicinity of the movable portions, it is possible to reliably remove foreign matter from the parts corresponding to the movable portions.

[0019] In the manufacturing method of the mirror device of one aspect of the present disclosure, it is also possible that, in the second process, a flow-through hole is formed in a part corresponding to the base portion. Thus, it is possible to make the cleaning liquid flow through the flow-through hole formed in the part corresponding to the base portion in the wet cleaning of the third process. Therefore, it is possible to reduce a load on the wafer due to the cleaning liquid, and it is possible to suppress generation of damage to the mirror device.

[0020] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to be supported by the connection portion to the base portion in the movable portion. Thus, in the wet cleaning of the third step, turbulence of the cleaning liquid is likely to occur in the vicinity of the connection portion, and thus the strength of the connection portion can be maintained and foreign matter can be reliably removed from the portion corresponding to the connection portion.

[0021] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to include the curved portion in at least a portion thereof. Thus, in the wet cleaning of the third step, the curved portion of the flow-through hole is subjected to less load by the cleaning liquid, and thus generation of damage to the wafer can be suppressed.

[0022] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to change in width in a direction perpendicular to a thickness direction of the wafer when viewed in the thickness direction. Thus, in the wet cleaning of the third step, turbulence of the cleaning liquid is likely to occur, and thus foreign matter can be reliably removed from the wafer.

[0023] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to have a different shape on one side edge and the other side edge opposite to the one side edge when viewed in a thickness direction of the wafer. Thus, a larger flow-through hole can be formed, and in the wet cleaning of the third step, a larger amount of the cleaning liquid can flow through the flow-through hole. Thus, foreign matter can be reliably removed from the wafer.

[0024] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to include the connection portion across the flow-through hole. Thus, in the wet cleaning of the third step, the wafer is reinforced by the connection portion, and thus generation of damage to the wafer can be suppressed.

[0025] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the flow-through hole can be formed so as to communicate with the slit. Thus, in the wet cleaning of the third step, a larger amount of the cleaning liquid can flow through the flow-through hole.

[0026] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the through-hole can be formed in the portion corresponding to the movable portion in a manner that, when viewed in the thickness direction of the wafer, the through-hole includes a first through region and a second through region adjacent to each other in a direction perpendicular to the thickness direction. Thus, in the wet cleaning of the third step, turbulence of the cleaning liquid is likely to occur at the site where the first through region and the second through region are adjacent to each other, and thus foreign matter can be reliably removed from the wafer.

[0027] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the through-hole can be formed in a manner that, when viewed in the thickness direction, the second through region is adjacent to the connecting portion in the direction in which the first through region and the second through region are arranged. Thus, in the wet cleaning of the third step, the wafer is reinforced by the connecting portion, and thus generation of damage to the wafer can be suppressed. In addition, in the wet cleaning of the third step, the cleaning liquid can flow through the second through region, and thus the load on the connecting portion due to the cleaning liquid can be reduced, and generation of damage to the connecting portion can be suppressed.

[0028] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the through-hole can be formed in a manner that, when viewed in the thickness direction, the second through region includes a portion in which the width of the second through region in the direction perpendicular to the thickness direction is smaller than the width of the first through region in the direction perpendicular to the thickness direction. Thus, the width of the first through region is different from the width of the second through region, and thus turbulence of the cleaning liquid is likely to occur in the wet cleaning of the third step. Thus, foreign matter can be reliably removed from the wafer.

[0029] In the manufacturing method of a mirror device of one aspect of the present disclosure, in the second step, the through-hole can be formed in a manner that the movable portion is supported by the connecting portion to the base portion, and the second through region is formed in a manner that, when viewed in the thickness direction, the second through region is adjacent to the connecting portion in the direction in which the first through region and the second through region are arranged. Thus, in the wet cleaning of the third step, the cleaning liquid can flow through the second through region, and thus the load on the connecting portion due to the cleaning liquid can be reduced, and generation of damage to the connecting portion can be suppressed.

[0030] Effects of Invention

[0031] According to the present disclosure, it is possible to provide a manufacturing method of a mirror device that can suppress generation of damage to the mirror device and residual foreign matter. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 is a plan view of a mirror device of the first embodiment.

[0033] Figure 2 is a cross-sectional view of the mirror device along Figure 1 line II-II shown in FIG. 1.

[0034] Figure 3 is a flowchart of the manufacturing method of the mirror device shown in Figure 1 FIG. 2.

[0035] Figure 4 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 1 FIG. 3.

[0036] Figure 5 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 1 FIG. 4.

[0037] Figure 6 is a structural view of the patterning member removal and protective film removal of the manufacturing method of the mirror device shown in Figure 1 FIG. 5.

[0038] Figure 7 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 1 FIG. 6.

[0039] Figure 8 is a structural view of the wet cleaning of the manufacturing method of the mirror device shown in Figure 1 FIG. 7.

[0040] Figure 9 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 1 FIG. 8.

[0041] Figure 10 is a cross-sectional view of the mirror device of the second embodiment.

[0042] Figure 11 is a flowchart of the manufacturing method of the mirror device shown in Figure 10 FIG. 9.

[0043] Figure 12 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 10 FIG. 10.

[0044] Figure 13 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 10 FIG. 11.

[0045] Figure 14 is a cross-sectional view of the manufacturing method of the mirror device shown in Figure 10 FIG. 12.

[0046] Figure 15 It is used for explanation Figure 10 A cross-sectional view of the manufacturing method of the reflector device shown.

[0047] Figure 16 This is a top view of the reflector device according to the third embodiment.

[0048] Figure 17 yes Figure 16 An enlarged view of the reflector device shown.

[0049] Figure 18 This is a top view of the reflector device according to the fourth embodiment.

[0050] Figure 19 This is a top view of a modified mirror device.

[0051] Figure 20 This is a top view of a modified mirror device.

[0052] Figure 21 This is a top view of a modified mirror device.

[0053] Figure 22 This is a top view of a modified mirror device. Detailed Implementation

[0054] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, the same or equivalent parts are labeled with the same reference numerals in the various figures, and repeated descriptions are omitted.

[0055] [First Implementation Method]

[0056] like Figure 1 and Figure 2 As shown, the mirror device 1A of the first embodiment includes a structure 2A, a mirror layer 3, and a correction layer 4. The mirror device 1A is, for example, axially symmetric about each of a first axis X1 along the X-axis and a second axis X2 along the Y-axis. The mirror device 1A may also be point-symmetric about the intersection of the first axis X1 and the second axis X2. The mirror device 1A may also be asymmetrical. The mirror device 1A is a MEMS device, such as an optical switch for optical communication, an optical scanner, etc.

[0057] Structure 2A is, for example, made of an SOI substrate. Structure 2A has a support layer 11, a device layer 12, and an intermediate layer 13. The support layer 11 is a first silicon layer. The device layer 12 is a second silicon layer. The intermediate layer 13 is an insulating layer disposed between the support layer 11 and the device layer 12. As an example, the thickness of the support layer 11 is approximately 100 μm to 700 μm, the thickness of the device layer 12 is approximately 20 μm to 200 μm, and the thickness of the intermediate layer 13 is approximately 50 nm to 3000 nm.

[0058] The structure 2A is, for example, in a rectangular plate shape. The structure 2A has a first surface 2a and a second surface 2b. The first surface 2a is a face of the device layer 12 on the opposite side of the intermediate layer 13. The second surface 2b is a face of the structure 2A on the opposite side of the first surface 2a. The second surface 2b includes a face of the support layer 11 on the opposite side of the intermediate layer 13 and a face of the device layer 12 on the opposite side of the first surface 2a.

[0059] The structure 2A is integrally composed of a base portion 21, a first movable portion 22, a second movable portion 23, a pair of first connecting portions 24, and a pair of second connecting portions 25. The base portion 21 is composed of a portion of the support layer 11, a portion of the device layer 12, and a portion of the intermediate layer 13. The base portion 21 is, for example, in a rectangular ring shape when viewed in the Z-axis direction (the thickness direction of the structure 2A). The base portion 21 has, for example, a size of 10 mm x 15 mm when viewed in the Z-axis direction.

[0060] The first movable portion 22, the second movable portion 23, the first connecting portions 24, and the second connecting portions 25 are composed of a portion of the device layer 12. The first movable portion 22 and the second movable portion 23 are supported by the base portion 21 via the first connecting portions 24 and the second connecting portions 25, respectively. Specifically, the first movable portion 22 and the second movable portion 23 are disposed inside the base portion 21 when viewed in the Z-axis direction. More specifically, the second movable portion 23 is disposed inside the base portion 21 via a second slit 23a that penetrates the structure 2A when viewed in the Z-axis direction. The second movable portion 23 is, for example, in a rectangular ring shape when viewed in the Z-axis direction. The second slit 23a extends along the outer edge of the second movable portion 23 when viewed in the Z-axis direction. The end face 11a of the support layer 11 of the base portion 21, the end face 12a of the device layer 12 of the base portion 21, and the end face 13a of the intermediate layer 13 of the base portion 21 are exposed in the second slit 23a. The second slit 23a is formed so as to allow the second movable portion 23 to be movable with respect to the base portion 21. In the present embodiment, the second slit 23a has a minimum width required for the second movable portion 23 to be movable with respect to the base portion 21.

[0061] Each second link portion 25 is disposed on both sides of the second movable portion 23 in the Y-axis direction, as viewed in the Z-axis direction. Each second link portion 25 extends linearly in the Y-axis direction, for example. Each second link portion 25 links the base portion 21 and the second movable portion 23 in a manner that the second movable portion 23 is movable relative to the base portion 21. Specifically, each second link portion 25 links the second movable portion 23 and the base portion 21 to each other on the second axis X2 in a manner that the second movable portion 23 is swingable about the second axis X2. In addition, the second slit 23a includes a portion that extends in the Y-axis direction on both sides of each second link portion 25 in the X-axis direction. That is, each second link portion 25 is disposed inside the base portion 21 via the second slit 23a.

[0062] The first movable portion 22 is disposed inside the second movable portion 23 via the first slit 22a of the through structure 2A, as viewed in the Z-axis direction. The first movable portion 22 has a rectangular shape, as viewed in the Z-axis direction, for example. The first slit 22a extends along the outer edge of the first movable portion 22, as viewed in the Z-axis direction. The first slit 22a is formed in order to make the first movable portion 22 movable relative to the base portion 21. In the present embodiment, the first slit 22a has a minimum width necessary to make the first movable portion 22 movable relative to the base portion 21.

[0063] Each first link portion 24 is disposed on both sides of the first movable portion 22 in the X-axis direction, as viewed in the Z-axis direction. Each first link portion 24 extends linearly in the X-axis direction, for example. Each first link portion 24 links the second movable portion 23 and the first movable portion 22 in a manner that the first movable portion 22 is movable relative to the base portion 21. Specifically, each first link portion 24 links the first movable portion 22 and the second movable portion 23 to each other on the first axis X1 in a manner that the first movable portion 22 is swingable about the first axis X1 along the X-axis direction.

[0064] In the structure 2A, a plurality of flow-through holes 21b, 22b, 23b that pass through the structure 2A are formed. The plurality of flow-through holes 21b, 22b, 23b are formed in a portion of the structure 2A other than the first slit 22a and the second slit 23a. Specifically, in the base portion 21, four flow-through holes 21b are formed, for example. Each flow-through hole 21b is located at each corner portion of the base portion 21, as viewed in the Z-axis direction. The four flow-through holes 21b are axially symmetrical to each other with respect to the first axis X1 and the second axis X2. Each flow-through hole 21b has a rectangular shape, as viewed in the Z-axis direction, for example. Each flow-through hole 21b passes through the base portion 21. In each flow-through hole 21b, the end face 11b of the support layer 11, the end face 12b of the device layer 12, and the end face 13b of the intermediate layer 13 are exposed, respectively. The flow-through hole 21b is larger than each of the flow-through hole 22b and the flow-through hole 23b.

[0065] A pair of flow holes 22b are formed in the first movable part 22. That is, a plurality of flow holes 22b are formed relative to one first movable part 22. The pair of flow holes 22b are symmetrical about the second axis X2. When viewed from the Z-axis direction, each flow hole 22b is, for example, semi-circular. Each flow hole 22b passes through the first movable part 22.

[0066] A pair of flow holes 23b are formed in the second movable part 23. That is, a plurality of flow holes 23b are formed relative to one second movable part 23. The pair of flow holes 23b are symmetrical about the second axis X2. When viewed from the Z-axis direction, each flow hole 23b is, for example, semi-rectangular annular. When viewed from the Z-axis direction, each flow hole 23b extends along the outer edge of the second movable part 23. Each flow hole 23b penetrates the second movable part 23.

[0067] like Figure 2 As shown, the end face 13a of the intermediate layer 13 is formed in a manner that is not recessed relative to either the end face 11a of the support layer 11 or the end face 12a of the device layer 12. The end faces 13a of the intermediate layer 13, 11a of the support layer 11, and 12a of the device layer 12 are all on the same plane. Similarly, the end face 13b of the intermediate layer 13 is formed in a manner that is not recessed relative to either the end face 11b of the support layer 11 or the end face 12b of the device layer 12. The end faces 13b of the intermediate layer 13, 11b of the support layer 11, and 12b of the device layer 12 are all on the same plane.

[0068] "The end face of the intermediate layer is not recessed relative to either the end face of the support layer or the end face of the device layer" refers to any state other than "when the end face of the intermediate layer is recessed relative to either the end face of the support layer or the end face of the device layer, the end face of the intermediate layer is recessed by more than three times the thickness of the intermediate layer from either the end face of the support layer or the end face of the device layer." Therefore, "the end face of the intermediate layer, the end face of the support layer, and the end face of the device layer are all on the same plane" can certainly be said as "even when the end face of the intermediate layer is recessed relative to either the end face of the support layer or the end face of the device layer, the end face of the intermediate layer is only recessed by 0.5 times the thickness of the intermediate layer from either the end face of the support layer or the end face of the device layer," or it can be said as "the end face of the intermediate layer is not recessed relative to either the end face of the support layer or the end face of the device layer."

[0069] The end surface 13a of the intermediate layer 13 is preferably recessed by 3 times or less, more preferably 2 times or less, further preferably 1 time or less, and most preferably 0.5 times or less of the thickness of the intermediate layer 13, with respect to both the end surface 11a of the support layer 11 and the end surface 12a of the device layer 12. In other words, the end surface 13a of the intermediate layer 13 is preferably recessed by 3 times or less, more preferably 2 times or less, further preferably 1 time or less, and most preferably 0.5 times or less of the thickness of the intermediate layer 13, with respect to both the end surface 11a of the support layer 11 and the end surface 12a of the device layer 12. Likewise, the end surface 13b of the intermediate layer 13 is preferably recessed by 3 times or less, more preferably 2 times or less, further preferably 1 time or less, and most preferably 0.5 times or less of the thickness of the intermediate layer 13, with respect to both the end surface 11b of the support layer 11 and the end surface 12b of the device layer 12. In other words, the end surface 13b of the intermediate layer 13 is preferably recessed by 3 times or less, more preferably 2 times or less, further preferably 1 time or less, and most preferably 0.5 times or less of the thickness of the intermediate layer 13, with respect to both the end surface 11b of the support layer 11 and the end surface 12b of the device layer 12.

[0070] The mirror layer 3 is provided in the first movable portion 22. Specifically, the mirror layer 3 is provided in a region of the first surface 2a of the structure 2A corresponding to the first movable portion 22. The mirror layer 3 is disposed more inward than the pair of flow-through holes 22b when viewed in the Z-axis direction. The mirror layer 3 is, for example, circular when viewed in the Z-axis direction. The mirror layer 3 is disposed with the intersection of the first axis X1 and the second axis X2 as a center position (a center of gravity position). The mirror layer 3 is composed of, for example, a reflective film composed of aluminum, an aluminum alloy, silver, a silver alloy, gold, a dielectric multilayer film, or the like.

[0071] The correction layer 4 is formed on the entire second surface 2b. Specifically, the correction layer 4 is formed on the side opposite the intermediate layer 13 of the support layer 11 in the base portion 21. The correction layer 4 is formed on the side opposite the mirror layer 3 of the device layer 12 in the first movable portion 22, the second movable portion 23, each first connecting portion 24, and each second connecting portion 25. The correction layer 4 corrects warping and the like of the first movable portion 22, the second movable portion 23, each first connecting portion 24, and each second connecting portion 25. The correction layer 4 is composed of, for example, a material such as silicon oxide or silicon nitride. The correction layer 4 can also be, for example, a metal thin film of aluminum or the like. The thickness of the correction layer 4 is, for example, on the order of 10 nm to 1000 nm.

[0072] The mirror device 1A further has a first coil 221 and a second coil 231. The first coil 221 is embedded in the first movable portion 22, for example, and extends spirally further outward than the pair of flow-through holes 22b (an outer edge portion of the first movable portion 22) when viewed in the Z-axis direction. The second coil 231 is embedded in the second movable portion 23, for example, and extends spirally further outward than the pair of flow-through holes 23b (an outer edge portion of the second movable portion 23) when viewed in the Z-axis direction. The first coil 221 and the second coil 231 are composed of a metal material such as copper, for example. In addition, in Figure 2 , the illustration of the first coil 221 and the second coil 231 is omitted.

[0073] In the mirror device 1A configured as above, the first movable portion 22 provided with the mirror layer 3 is caused to oscillate around the first axis X1 and the second axis X2 orthogonal to each other. Specifically, when a driving signal for linear motion is input to the second coil 231 via an electrode pad (omitted illustration) and a wiring (omitted illustration) provided in the structure 2A, a Lorentz force is exerted on the second coil 231 by interaction with a magnetic field generated by a magnetic field generating portion (omitted illustration). By balancing the Lorentz force with the elastic force of each second link portion 25, the mirror layer 3 (the first movable portion 22) is caused to perform linear motion around the second axis X2 together with the second movable portion 23.

[0074] On the other hand, when a driving signal for resonant vibration is input to the first coil 221 via the electrode pad and the wiring, a Lorentz force is exerted on the first coil 221 by interaction with the magnetic field generated by the magnetic field generating portion. In addition to the Lorentz force, by utilizing the resonance of the first movable portion 22 at a resonant frequency, the mirror layer 3 (the first movable portion 22) is caused to perform resonant vibration around the first axis X1.

[0075] Next, a manufacturing method of the mirror device 1A will be described. First, as shown in Figure 3 and Figure 4 (a), a wafer 10W having a support layer 11, a device layer 12, and an intermediate layer 13 is prepared (step S1, first process). The wafer 10W has a surface (first surface) 10a and a back surface (second surface) 10b on the opposite side from the surface 10a. The surface 10a is a face that becomes the first surface 2a of the structure 2A. The wafer 10W includes a plurality of portions 11W that become the structure 2A, respectively. The portion 11W is a portion of the wafer 10W before the structure 2A is formed. Each process of the manufacturing method of the mirror device 1A is implemented at the wafer level. In addition, in Figure 4 , Figure 5 , Figure 7 and Figure 9 , one portion 11W in the wafer 10W is shown. Hereinafter, one portion 11W in the wafer 10W will be described with focus.

[0076] Next, by removing a part of each of the support layer 11, the device layer 12, and the intermediate layer 13 from the wafer 10W, a first slit 22a and a second slit 23a are formed in the wafer 10W in a manner that the first movable portion 22 and the second movable portion 23 are movable with respect to the base portion 21, and a plurality of portions 12WA corresponding to the structures 2A, respectively, are formed in the wafer 10W (refer to FIG. 2B). Figure 7 (b) (second step). The portion 12WA is a part of the wafer 10W in which the structure 2A is formed. First, a part of the device layer 12 is removed from the wafer 10W by etching (step S2). Specifically, a part of the device layer 12 corresponding to the first slit 22a, the second slit 23a, the through-holes 21b, 22b, 23b is removed. As a result, the end surface 12a and the end surface 12b of the device layer 12 are formed. In step S2, the first coil 221, the second coil 231, and an electrode pad and a wiring and the like for inputting a driving signal to the first coil 221 and the second coil 231 are provided in the device layer 12. In step S2, a mirror layer 3 is formed in a part of the surface 10a of the wafer 10W corresponding to the first movable portion 22. The mirror layer 3 is formed by, for example, evaporation of a metal. In step S2, a patterning member for removal of the device layer 12 is removed from the wafer 10W by a patterning member removal (details will be described later).

[0077] Next, as shown in Figure 4 (b), the back surface 10b of the wafer 10W is polished (step S3). The wafer 10W is thinned by polishing the back surface 10b. The polished back surface 10b of the wafer 10W is a surface which becomes a part of the second surface 2b of the structure 2A.

[0078] Next, as shown in Figure 5 (a), a patterning member 19 is patterned on the back surface 10b of the wafer 10W (step S4). Specifically, the patterning member 19 is provided in a region of the back surface 10b corresponding to the base portion 21 and in a region other than the region corresponding to the through-hole 21b. The patterning member 19 is, for example, a resist or the like. Then, as shown in Figure 5(b) A portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 19 as shown (step S5). Specifically, a portion of the support layer 11 inward of the portion corresponding to the base portion 21 and the portion corresponding to the flow-through hole 21b is removed. As a result, the end face 11a and the end face 11b of the support layer 11 are formed. In step S5, a portion of the support layer 11 is removed from the wafer 10W in such a manner that the end face 11a and the end face 11b of the support layer 11 become the same plane as the end face 12a and the end face 12b of the device layer 12, respectively. The portion of the support layer 11 is removed, for example, by using reactive ion etching (DRIE) of Bosch process. In addition, in step S5, a protective film such as a polymer is used when a portion of the support layer 11 is removed from the wafer 10W.

[0079] Next, as shown in Figure 6 the patterning member removal and the protective film removal are performed (step S6). First, the patterning member removal is performed. The patterning member removal is a step for removing (peeling) the patterning member 19 from the back face 10b of the wafer 10W. In the patterning member removal, after a portion of the support layer 11 is removed from the wafer 10W, the patterning member 19 is removed according to a wet process. Specifically, first, a plurality of wafers 10W are placed in a carrier 50 in a box shape.

[0080] In an inner wall face of the carrier 50, a plurality of grooves (omitted from illustration) are formed at regular intervals in the Z-axis direction. The grooves extend along the XY face. In the patterning member removal, the plurality of wafers 10W are arranged in the Z-axis direction (the thickness direction of the wafer 10W) by fitting each wafer 10W in each groove. That is, on one side and the other side of the wafer 10W in the Z-axis direction, other wafers 10W having the same structure as the wafer 10W are arranged, respectively. Between the wafer 10W and the other wafer 10W adjacent to each other, a second region R2 is formed. Next, the patterning member 19 is removed in a state where the second region R2 is present in the patterning member removal liquid. Specifically, as described above, in a state where the plurality of wafers 10W and the other wafers 10W are placed in the carrier 50, the plurality of wafers 10W and the other wafers 10W are immersed in the patterning member removal liquid. The patterning member removal liquid is, for example, accommodated in a liquid pool. The plurality of wafers 10W and the other wafers 10W are immersed in the patterning member removal liquid in such a manner that the orientation of the opening of the carrier 50 is the same as the orientation of the liquid face of the patterning member removal liquid. The patterning member removal liquid is a chemical liquid or the like for removing the patterning member 19 from the wafer 10W.

[0081] Next, the plurality of wafers 10W is reciprocated (swung) in the X-axis direction (a direction intersecting the thickness direction of the wafer 10W and the liquid surface of the patterned member removing liquid) in a state in which the plurality of wafers 10W is immersed in the patterned member removing liquid. The reciprocation of the plurality of wafers 10W is performed by reciprocating the carrier 50. In the patterned member removal, the plurality of wafers 10W is reciprocated at a second speed for a second time. The "reciprocation speed" refers to the number of reciprocations per unit time. The second speed is, for example, on the order of 70 times / minute. The second time is, for example, on the order of 40 minutes. The second time is the total of the times for which the plurality of wafers 10W is reciprocated at the second speed. In the patterned member removal, for example, the kind of the patterned member removing liquid can be changed, or the reciprocation of the plurality of wafers 10W can be temporarily stopped. In the patterned member removal, after the patterned member 19 is removed by the wet process, the plurality of wafers 10W is, for example, immersed in water for a prescribed time.

[0082] In the patterned member removal, after the patterned member 19 is removed, that is, after the wafer 10W is immersed in water for a prescribed time, second rotary drying in which the wafer 10W is dried is performed. In the second rotary drying, the wafer 10W is dried by rotating the wafer 10W at a second rotary speed for a fourth time. When the patterned member removal is performed, as described in Figure 7 (a), the patterned member 19 is removed from the wafer 10W.

[0083] Next, protective film removal is performed. The protective film removal is a step for removing a polymer or the like used as a protective film in step S5 from the wafer 10W. In the protective film removal, after a part of the support layer 11 is removed from the wafer 10W, the protective film is removed according to a wet process using a protective film removing liquid. The protective film removing liquid is a chemical liquid or the like for removing a polymer or the like from the wafer 10W.

[0084] Next, as shown in Figure 7 (b), a part of the intermediate layer 13 is removed from the wafer 10W by etching (step S7). Specifically, a part of the intermediate layer 13 that is more inside than the part corresponding to the base portion 21 and the part corresponding to the flow-through hole 21b is removed. As a result, the first slit 22a and the second slit 23a are formed. At this time, the end surface 13a of the intermediate layer 13 is formed. In step S7, by forming the first slit 22a and the second slit 23a in the wafer 10W in a manner that the first movable portion 22 and the second movable portion 23 are movable with respect to the base portion 21, the plurality of portions 12WA each corresponding to the structure 2A is formed in the wafer 10W, and the plurality of portions 12WA is completed. That is, the plurality of first movable portions 22 and the plurality of second movable portions 23 are released. The "release" refers to a state in which the first movable portion or the second movable portion is made movable from a fixed state with respect to the base portion.

[0085] In step S7, the first slit 22a and the second slit 23a are formed such that the first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively.

[0086] Furthermore, in step S7, as described above, by removing a portion of the intermediate layer 13 from the wafer 10W, a plurality of through-holes 21b, 22b, and 23b are formed in the portion of the wafer 10W other than the first slit 22a and the second slit 23a, penetrating the wafer 10W. Specifically, in step S7, through-holes 21b are formed in the portion of the wafer 10W corresponding to the base 21, through-holes 22b are formed in the portion corresponding to the first movable portion 22, and through-holes 23b are formed in the portion corresponding to the second movable portion 23. At this time, the end face 13b of the intermediate layer 13 is formed.

[0087] In step S7, etching is performed such that the end face 13a of the intermediate layer 13 is not recessed relative to either the end face 11a of the support layer 11 or the end face 12a of the device layer 12. In step S7, etching is performed such that the end face 13a of the intermediate layer 13 is coplanar with the end faces 11a of the support layer 11 and 12a of the device layer 12. Similarly, in step S7, etching is performed such that the end face 13b of the intermediate layer 13 is not recessed relative to either the end face 11b of the support layer 11 or the end face 12b of the device layer 12. In step S7, etching is performed such that the end face 13b of the intermediate layer 13 is coplanar with the end faces 11b of the support layer 11 and 12b of the device layer 12. In step S7, a portion of the intermediate layer 13 is removed from the wafer 10W by anisotropic etching. In step S7, a portion of the intermediate layer 13 is removed from the wafer 10W by dry etching.

[0088] Next, as Figure 8 As shown, wet cleaning is performed (step S8, third process). Wet cleaning is used to remove foreign matter and other contaminants adhering to the wafer 10W. In wet cleaning, the wafer 10W is cleaned with a cleaning solution (not shown). Specifically, firstly, multiple wafers 10W and multiple dummy wafers (control wafers) 20W are placed in a box-shaped carrier 60. The thickness of the dummy wafers 20W is, for example, about 625 μm.

[0089] On the inner wall surface of the carrier 60, a plurality of grooves (omitted from the drawing) are formed at regular intervals in the Z-axis direction. The grooves extend in the XY plane. In the wet cleaning, the plurality of wafers 10W and the plurality of dummy wafers 20W are alternately arranged in the Z-axis direction (the thickness direction of the wafers 10W and the dummy wafers 20W) by fitting each wafer 10W and each dummy wafer 20W into each groove. That is, on one side and the other side of the wafers 10W in the Z-axis direction, the dummy wafers 20W are arranged, respectively. Between the wafers 10W and the dummy wafers 20W adjacent to each other, the first region R1 is formed. The width of the first region R1 in the Z-axis direction is larger than the width of the second region R2 in the Z-axis direction.

[0090] Next, the wafers 10W are cleaned in a state where the first region R1 is present with the cleaning liquid. Specifically, as described above, in a state where the plurality of wafers 10W and the plurality of dummy wafers 20W are placed in the carrier 60, the plurality of wafers 10W and the plurality of dummy wafers 20W are immersed in the cleaning liquid. The cleaning liquid is, for example, contained in a liquid pool. The plurality of wafers 10W and the plurality of dummy wafers 20W are immersed in the cleaning liquid in such a manner that the orientation of the opening of the carrier 60 is the same as the orientation of the liquid surface of the cleaning liquid. The cleaning liquid is a chemical liquid or the like for removing foreign matter or the like from the wafers 10W. Next, in a state where the plurality of wafers 10W and the plurality of dummy wafers 20W are immersed in the cleaning liquid, the plurality of wafers 10W and the plurality of dummy wafers 20W are reciprocated (swung) in the X-axis direction (a direction intersecting the thickness direction of the wafers 10W and the liquid surface of the cleaning liquid). The reciprocation of the plurality of wafers 10W and the plurality of dummy wafers 20W is performed by reciprocating the carrier 60.

[0091] In the wet cleaning, the plurality of wafers 10W and the plurality of dummy wafers 20W are reciprocated at a first speed for a first time. The load applied to the wafers 10W in the wet cleaning of step S8 is smaller than the load applied to the wafers 10W in the patterned member removing of step S6. That is, the strength of the wet cleaning of step S8 is smaller than the strength of the patterned member removing of step S6. Similarly, the load applied to the wafers 10W in the wet cleaning of step S8 is smaller than the load applied to the wafers 10W in the protective film removing of step S6. That is, the strength of the wet cleaning of step S8 is smaller than the strength of the protective film removing of step S6. The "load applied to the wafers" refers to the magnitude of mechanical work (energy) applied to the wafers. For example, the greater the speed at which the wafers 10W are reciprocated in the wet cleaning of step S8, the greater the load applied to the wafers 10W. Further, for example, the longer the time for which the wafers 10W are reciprocated in the wet cleaning of step S8, the greater the load applied to the wafers 10W.

[0092] The first speed is lower than the second speed. The first speed is, for example, around 40 times per minute. The first time is shorter than the second time. The first time is, for example, around 20 minutes. The first time is the cumulative time for the multiple wafers 10W and multiple complementary wafers 20W to reciprocate at the first speed. In wet cleaning, for example, the type of cleaning solution can be changed, or the reciprocating motion of the multiple wafers 10W and multiple complementary wafers 20W can be temporarily stopped. In wet cleaning, after cleaning the wafers 10W with the cleaning solution, the multiple wafers 10W and multiple complementary wafers 20W are, for example, immersed in water for a specified time.

[0093] In wet cleaning, after cleaning the wafer 10W, that is, after immersing the wafer 10W in water for a predetermined time, a first spin drying process is performed to dry the wafer 10W. In the first spin drying, the wafer 10W is rotated at a first rotational speed for a third time. The load applied to the wafer 10W in step S8 (first spin drying) is less than the load applied to the wafer 10W in step S6 (second spin drying). That is, the intensity of the first spin drying in step S8 is less than the intensity of the second spin drying in step S6. For example, in step S8 (first spin drying), the higher the rotational speed at which the wafer 10W is rotated, the greater the load applied to the wafer 10W. Furthermore, for example, in step S8 (first spin drying), the longer the time the wafer 10W is rotated, the greater the load applied to the wafer 10W. The first rotational speed is lower than the second rotational speed. The first rotational speed is, for example, around 200 rpm. The third time is, for example, around 5 minutes.

[0094] Next, as Figure 9 As shown in (a), a correction layer 4 is formed on the back surface 10b of the wafer 10W, opposite to the surface 10a where the mirror layer 3 is formed (step S9, fifth process). The correction layer 4 is formed on the surfaces of the support layer 11 and the device layer 12, respectively, opposite to the mirror layer 3. Next, as shown in (a), Figure 9 As shown in (b), each of the multiple portions 12WA is cut from the wafer 10W (step 10, fourth process). Thus, multiple mirror devices 1A are manufactured.

[0095] As explained above, in the manufacturing method of the mirror device 1A, in the step S8 (third process), the wafer 10W from which the plurality of first movable portions 22 and the plurality of second movable portions 23 are released is cleaned by the cleaning liquid. Thereby, the foreign matter can be removed from the wafer 10W from which the plurality of first movable portions 22 and the plurality of second movable portions 23 are released. When the wafer 10W from which the plurality of first movable portions 22 and the plurality of second movable portions 23 are released is cleaned by the wet cleaning of the step S8, damage is easily generated in the plurality of first movable portions 22 and the plurality of second movable portions 23. Here, in the step S7 (second process), the through holes 21b, 22b, 23b that pass through the wafer 10W are formed in the portions of the wafer 10W other than the first slits 22a and the second slits 23a, respectively, by etching. Therefore, in the wet cleaning of the step S8, the cleaning liquid can pass through the through holes 21b, 22b, 23b, and the wafer 10W from which the plurality of first movable portions 22 and the plurality of second movable portions 23 are released is cleaned. Therefore, the load on the plurality of first movable portions 22 and the plurality of second movable portions 23 by the cleaning liquid can be reduced, and the generation of damage in the plurality of first movable portions 22 and the plurality of second movable portions 23 can be suppressed. Thereby, according to the manufacturing method of the mirror device 1A, the generation of damage and the remaining of the foreign matter of the mirror device 1A can be suppressed. Further, between one side and the other side of the wafer 10W in the Z-axis direction, the cleaning liquid becomes easy to pass through the through holes 21b, 22b, 23b. Therefore, the cleaning efficiency by the wet cleaning is improved.

[0096] Further, in the manufacturing method of the mirror device 1A, in the step S2, the mirror layer 3 is formed in the portion of the wafer 10W corresponding to the first movable portion 22. Thereby, the foreign matter attached to the mirror layer 3 can be removed by the wet cleaning of the step S8.

[0097] Further, the manufacturing method of the mirror device 1A has the step S9 of forming the correction layer 4 on the back surface 10b of the wafer 10W between the step S8 and the step S10. Thereby, the foreign matter can be suppressed from being covered by the correction layer 4.

[0098] Further, in the manufacturing method of the mirror device 1A, in the step S6, after the part of the support layer 11 is removed from the wafer 10W, the protection film removal for removing the protection film is performed, and after the protection film removal, the plurality of parts 12WA are completed. Further, in the manufacturing method of the mirror device 1A, in the protection film removal of the step S6, the protection film is removed by a wet process. At the time of removing the part of the support layer 11 from the wafer 10W, as described above, a polymer or the like is used as the protection film. After the part of the support layer 11 is removed from the wafer 10W, sometimes the polymer remains in the wafer 10W. Further, due to the wafer 10W becoming a shape having unevenness by removing the part of the device layer 12 from the wafer 10W, and the part of the intermediate layer 13 not being removed from the wafer 10W, and the like, in the protection film removal, sometimes the protection film removal liquid remains on the surface of the mirror layer 3 or the like formed in the wafer 10W. When the remaining protection film removal liquid is dried, a scratch can be generated. When the polymer and the scratch or the like remain in the wafer 10W, the presence of the polymer or the scratch or the like becomes a cause of appearance failure of the mirror device 1A, and the yield can decrease. According to the manufacturing method of the mirror device 1A, it is possible to remove the polymer (foreign matter) or the like remaining in the wafer 10W by the protection film removal at the time of removing the part of the support layer 11 from the wafer 10W. In addition, at the time of removing the protection film, it is possible to remove the scratch (foreign matter) or the like remaining in the wafer 10W by the wet cleaning of the step S8. Thereby, it is possible to suppress the decrease in the yield due to the appearance failure of the mirror device 1A.

[0099] Further, in the manufacturing method of the mirror device 1A, in the step S6, the patterning member removal for removing the patterning member 19 is performed, and after the patterning member removal, the plurality of parts 12WA are completed. Thereby, the patterning member 19 is removed before the plurality of first movable portions 22 and the second movable portions 23 are released, and thus, it is possible to suppress the generation of damage of the mirror device 1A due to the patterning member removal.

[0100] Further, in the manufacturing method of the mirror device 1A, in the patterning member removal of the step S6, the patterning member 19 is removed by a wet process. Thereby, the patterning member 19 is removed before the plurality of first movable portions 22 and the second movable portions 23 are released, and thus, even if the patterning member 19 is removed by the wet process, it is possible to suppress the generation of damage of the mirror device 1A.

[0101] Furthermore, in the manufacturing method of the reflector device 1A, in step S7, a plurality of flow holes 22b and a plurality of flow holes 23b are formed in the portions corresponding to the first movable portion 22 and the second movable portion 23. Therefore, during the wet cleaning in step S8, since turbulence of the cleaning fluid is easily generated near the first movable portion 22 and the second movable portion 23, foreign matter can be reliably removed from the portions corresponding to the first movable portion 22 and the second movable portion 23. Furthermore, foreign matter can be reliably removed from the reflector layer 3.

[0102] Furthermore, in the manufacturing method of the mirror device 1A, in step S7, a flow-through hole 21b is formed at the portion corresponding to the base 21. This allows a larger amount of cleaning fluid to flow through the flow-through hole 21b in addition to the flow-through holes 22b and 23b during the wet cleaning process in step S8. Therefore, the load on the wafer 10W due to the cleaning fluid can be reduced more reliably, and damage to the wafer 10W can be suppressed more reliably. Furthermore, the cleaning efficiency of the wet cleaning process is reliably improved.

[0103] [Second Implementation]

[0104] like Figure 10 As shown, the main difference between the mirror device 1B of the second embodiment and the mirror device 1A of the first embodiment is that it has a beam portion 5 instead of a correction layer 4. The rest of the mirror device 1B is the same as the mirror device 1A, so detailed descriptions are omitted.

[0105] The structure 2B of the reflector device 1B includes multiple beam portions 5. Each beam portion 5 is formed by a support layer 11 and a portion of an intermediate layer 13. The beam portions 5 are located in the first movable portion 22. The beam portions 5 are located on the surface of the device layer 12 opposite to the reflector layer 3. The beam portions 5 extend linearly, for example, along the Y-axis. Multiple beam portions 5 are arranged at predetermined intervals along the X-axis. The multiple beam portions 5 can also be arranged radially, for example, when viewed from the Z-axis direction. The structure 2B may also include a single beam portion 5. In this case, the beam portion 5 may also be annular, for example, when viewed from the Z-axis direction. That is, the beam portion 5 may also be cylindrical. The beam portions 5 can also have various shapes. The beam portions 5 are provided to reinforce the structure 2B. In the beam portion 5, the end face 11c of the support layer 11 is formed in a manner that is not recessed relative to the end face 13c of the intermediate layer 13. The end face 11c of the support layer 11 and the end face 13c of the intermediate layer 13 are coplanar. When viewed from the Z-axis direction, the end face 11c of the support layer 11 and the end face 13c of the intermediate layer 13 are located further inside than the end face 22c of the first movable part 22 (the end face forming the flow hole 22b).

[0106] Next, a manufacturing method of the mirror device IB will be described. The manufacturing method of the mirror device IB differs from the manufacturing method of the mirror device IA of the first embodiment mainly in that the beam portion 5 is formed instead of the correction layer 4. The manufacturing method of the mirror device IB is otherwise the same as the manufacturing method of the mirror device IA of the first embodiment, and thus detailed description will be omitted.

[0107] First, as shown in Figure 11 (a), the wafer 10W is prepared (step S21, first process) as with step SI of the first embodiment (see Figure 4 (a)). Next, as with the first embodiment, a portion of each of the support layer 11, the device layer 12, and the intermediate layer 13 is removed from the wafer 10W by etching, thereby forming the first and second slits 22a and 23a in the wafer 10W in a manner that the first and second movable portions 22 and 23 are movable with respect to the base portion 21, and a plurality of portions 12WB (see Figure 15 (a)) corresponding to the structure 2B are formed in the wafer 10W (second process). First, as with step S2 of the first embodiment, a portion of the device layer 12 is removed from the wafer 10W by etching, the first and second coils 221 and 231, the electrode pads, the wiring, and the like are provided to the device layer 12, and the mirror layer 3 is formed on the surface 10a of the wafer 10W (step S22). Next, as with step S3 of the first embodiment (see Figure 4 (b)), the back surface 10b of the wafer 10W is polished (step S23).

[0108] Next, as shown in Figure 12 (a), the patterning member 29 is patterned on the back surface 10b of the wafer 10W as with step S4 of the first embodiment (step S24). Next, as shown in Figure 12 (b), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 29 (step S25). In step S25, only a portion of the support layer 11 in the thickness direction is removed. Step S25 is otherwise the same as step S5 of the first embodiment. Next, as with step S6 of the first embodiment (see Figure 6 ), the patterning member removal and the protective film removal are performed (step S26). When the patterning member removal is performed, as shown in Figure 13 (a), the patterning member 29 is removed from the wafer 10W.

[0109] Next, as shown in Figure 13(b) As shown in (b), the patterning member 39 is patterned in the back surface 10b of the wafer 10W (step S27). Specifically, the patterning member 39 is provided in a region of the back surface 10b corresponding to the base portion 21, a region other than the region corresponding to the flow-through hole 21b, and a region of the back surface 10b corresponding to the beam portion 5. Next, as shown in (c), the support layer 11 is removed from the wafer 10W by etching via the patterning member 39 (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed. Figure 14 (a) As shown in (a), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 39 (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed.

[0110] Next, the patterning member removal is performed again (step S29). When the patterning member removal is performed again, as shown in (b), the patterning member 39 is removed from the wafer 10W. Next, as shown in (c), a portion of the support layer 11 is removed from the wafer 10W by etching (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed. Figure 14 (a) As shown in (a), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 39 (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed. Figure 15 (a) As shown in (a), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 39 (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed. Figure 8 ) likewise, wet cleaning is performed (step S31, third process). Next, as shown in (b), each of the plurality of portions 12WB is cut out from the wafer 10W (step 32, fourth process). Thus, a plurality of mirror devices 1B are manufactured. Figure 15 (a) As shown in (a), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterning member 39 (step S28). Specifically, a portion of the support layer 11 inward of a portion corresponding to the base portion 21, a portion other than a portion corresponding to the beam portion 5, and a portion corresponding to the flow-through hole 21b are removed. As a result, an end surface 11c of the support layer 11 is formed.

[0111] As described above, according to the manufacturing method of the mirror device 1B, as with the manufacturing method of the mirror device 1A of the first embodiment described above, it is possible to suppress the generation of damage and the remaining of foreign matter of the mirror device 1B.

[0112] Furthermore, in the manufacturing method of the reflector device 1B, in step S30 (second step), etching is performed such that the end face 13c of the intermediate layer 13 is not recessed relative to the end face 11c of the support layer 11. Therefore, the beam portion 5 is less likely to peel off from the first movable portion 22. If the end face 13c of the intermediate layer 13 is recessed relative to the end face 11c of the support layer 11, the beam portion 5 will peel off from the first movable portion 22, and as a result, the structure 2B may be damaged. Here, since the beam portion 5 is less likely to peel off from the first movable portion 22, damage to the structure 2B is suppressed. After step S30, since wet cleaning is performed in step S31, it is particularly important that the beam portion 5 is less likely to peel off from the first movable portion 22.

[0113] [Third Implementation Method]

[0114] like Figure 16 As shown, the mirror device 1C of the third embodiment differs from the mirror device 1A of the first embodiment mainly in the following aspects: the flow hole 22b includes a first flow region 22d and a second flow region 22e; the flow hole 23b communicates with the first slit 22a; and a flow hole 25b is formed in the second connecting portion 25. Detailed descriptions of the parts of the mirror device 1C that are the same as those of the mirror device 1A are omitted.

[0115] Viewed from the Z-axis direction, the first movable part 22 of the structure 2C is, for example, an N-sided shape (N is a natural number of 4 or more). N is preferably a natural number of 5 or more. Viewed from the Z-axis direction, the first movable part 22 is, for example, an octagon. Viewed from the Z-axis direction, the first movable part 22 may also be, for example, circular. The second connecting part 25 is disposed on both sides of the second movable part 23 in the X-axis direction.

[0116] The flow hole 22b formed in the first movable portion 22 includes a first flow region 22d and a plurality of second flow regions 22e. Viewed from the Z-axis direction, the first flow region 22d extends along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, the first flow region 22d is, for example, annular. A plurality of connecting portions 26 are formed in the first movable portion 22, spanning the first flow region 22d. Thus, the first flow region 22d is divided into a plurality of regions arranged along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, each connecting portion 26 is arranged circumferentially in the first flow region 22d.

[0117] The plurality of second flow-through regions 22e are located outside the first flow-through region 22d when viewed in the Z-axis direction. The plurality of second flow-through regions 22e are arranged along the outer edge of the first movable portion 22 when viewed in the Z-axis direction. Each of the second flow-through regions 22e is arranged along the outer edge (each side of the octagon) of the first movable portion 22 when viewed in the Z-axis direction. In this way, the first flow-through region 22d and the second flow-through region 22e are adjacent to each other in a direction perpendicular to the Z-axis direction.

[0118] The direction perpendicular to the Z-axis direction refers to a direction along a direction from the inner side of the first flow-through region toward the outer side of the first flow-through region when viewed in the Z-axis direction. The direction perpendicular to the Z-axis direction is a direction perpendicular to the outer edge of the first movable portion 22 when viewed in the Z-axis direction. The direction perpendicular to the Z-axis direction is the radial direction of the first movable portion 22 when viewed in the Z-axis direction. Hereinafter, the direction perpendicular to the Z-axis direction will be referred to as the "radial direction".

[0119] The width of the second flow-through region 22e in the radial direction is smaller than the width of the first flow-through region 22d in the radial direction when viewed in the Z-axis direction. The second flow-through region 22e can also include a portion having a width in the radial direction that is smaller than the width of the first flow-through region 22d in the radial direction. In other words, the second flow-through region 22e can also include a portion having a width in the radial direction that is equal to or greater than the width of the first flow-through region 22d in the radial direction.

[0120] The flow-through hole (flow-through auxiliary region) 23b of the second movable portion 23 communicates with the first slit 22a. Specifically, the flow-through hole 23b is formed by the first slit 22a expanding to the opposite side of the first movable portion 22 in the X-axis direction. The region constituted by the first slit 22a and the flow-through hole 23b has, for example, a rectangular outer shape when viewed in the Z-axis direction. In addition, in Figure 16 In FIG. 6, the boundary line between the flow-through hole 23b and the first slit 22a is indicated by a dashed line. In each of the second connecting portions 25, a pair of flow-through holes 25b is formed. In each of the second connecting portions 25, the pair of flow-through holes 25b is arranged in the Y-axis direction. Each of the flow-through holes 25b penetrates the second connecting portion 25.

[0121] As Figure 16 and Figure 17As shown, a portion of the first movable portion 22 on the inner side of the first flow-through region 22d constitutes a main body portion 30. A portion of the first movable portion 22 on the outer side of the first flow-through region 22d constitutes a ring-shaped portion 40. In plan view, the main body portion 30 is circular, and can also be formed in an arbitrary shape such as an elliptical shape, a quadrangular shape, a rhombic shape, or the like. The center of the main body portion 30 in plan view coincides with the intersection of the first axis X1 and the second axis X2. The ring-shaped portion 40 is formed in a ring shape so as to surround the main body portion 30 across the first flow-through region 22d in plan view. The ring-shaped portion 40 has, for example, an octagonal outer edge and an inner edge in plan view. The plurality of connection portions 26 link the main body portion 30 and the ring-shaped portion 40 to each other.

[0122] The ring-shaped portion 40 has: a pair of first portions 41, a pair of second portions 42, and two pairs of third portions (inclined portions) 43. The pair of first portions 41 is located on both sides of the main body portion 30 in the X-axis direction. Each first portion 41 is provided so as to extend in the Y-axis direction. The pair of second portions 42 is located on both sides of the main body portion 30 in the Y-axis direction. Each second portion 42 is provided so as to extend in the X-axis direction. The two pairs of third portions 43 are respectively located between the first portions 41 and the second portions 42, and connect the first portions 41 and the second portions 42. Each third portion 43 extends in a direction that intersects the X-axis direction and the Y-axis direction. Each third portion 43 is oblique to the center line (first axis X1) of the first connection portion 24 and the second connection portion 25.

[0123] According to the structure in which each third portion 43 extends in a direction that intersects the X-axis direction and the Y-axis direction, each third portion 43 can be made closer to the first axis X1 than in the case in which the ring-shaped portion 40 is, for example, rectangular. Thus, the moment of inertia of the first movable portion 22 about the first axis X1 can be reduced by concentrating the mass of the first movable portion 22 in a region close to the first axis X1. In other words, in the case in which the first movable portion 22 is N-gon when viewed in the Z-axis direction, the larger N is, the more the moment of inertia of the first movable portion 22 about the first axis X1 can be reduced by concentrating the mass of the first movable portion 22 in a region close to the first axis X1. As a result, the driving power for driving the first movable portion 22 can be reduced.

[0124] In each first portion 41, a second flow-through region 22e is formed. Each first portion 41 has a first frame portion 41a on the opposite side of the second flow-through region 22e from the main body portion 30, and a second frame portion 41b on the opposite side of the second flow-through region 22e from the first frame portion 41a. The first frame portion 41a is a portion of the first movable portion 22 outside the second flow-through region 22e. The second frame portion 41b is a portion of the first movable portion 22 between the first flow-through region 22d and the second flow-through region 22e. The first frame portion 41a and the second frame portion 41b extend along the second flow-through region 22e. The width Dl of the first frame portion 41a in the radial direction is substantially the same as the width D2 of the second frame portion 41b in the radial direction.

[0125] In each first portion 41, the second flow-through region 22e is disposed in an axisymmetric manner about the first axis Xl. That is, in each first portion 41, the second flow-through region 22e is formed at a position adjacent to the first link portion 24 on the center line of the first link portion 24 and the second link portion 25. Thus, for example, in the case where stress is generated in the first link portion 24 or the second link portion 25, and the stress is transmitted to the first movable portion 22, the portion of the first portion 41 near the second flow-through region 22e is partially deformed, with the result that the stress is inhibited from being transmitted to the main body portion 30 of the first movable portion 22. Thus, deformation and the like of the mirror layer 3 can be inhibited.

[0126] In each second portion 42, a second flow-through region 22e is formed. Each second portion 42 has a first frame portion 42a on the opposite side of the second flow-through region 22e from the main body portion 30, and a second frame portion 42b on the opposite side of the second flow-through region 22e from the first frame portion 42a. The first frame portion 42a is a portion of the first movable portion 22 outside the second flow-through region 22e. The second frame portion 42b is a portion of the first movable portion 22 between the first flow-through region 22d and the second flow-through region 22e. The first frame portion 42a and the second frame portion 42b extend along the second flow-through region 22e. The width D3 of the first frame portion 42a in the radial direction is greater than the width D4 of the second frame portion 42b in the radial direction. In each second portion 42, the second flow-through region 22e is formed at a position separate from the center line of the first link portion 24 and the second link portion 25.

[0127] Each second frame portion 42b functions as a stress relaxation region. Specifically, for example, in the case where the first movable portion 22 is subjected to stress from the outside, the second frame portion 42b is partially deformed, with the result that the stress is inhibited from being transmitted to the main body portion 30 of the first movable portion 22. Thus, deformation and the like of the mirror layer 3 can be inhibited.

[0128] Each second portion 42 is connected with the main body portion 30 by the connection portion 26. Specifically, the connection portion 26 connects the second frame portion 42b with the main body portion 30. In each second portion 42, the connection portion 26 spans the first flow-through region 22d in the radial direction (the direction in which the first flow-through region 22d and the second flow-through region 22e are arranged). In each second portion 42, the connection portion 26 spans the first flow-through region 22d at a portion thereof that coincides with the second flow-through region 22e in the radial direction. The connection portion 26 that connects the second portion 42 with the main body portion 30 is formed at the first flow-through region 22d on the side opposite the third portion 43 and the first connection portion 24.

[0129] In each second portion 42, the connection portion 26 is adjacent to the second flow-through region 22e in the radial direction. That is, the connection portion 26 is formed in correspondence with the second flow-through region 22e. In each second portion 42, the connection portion 26 is connected with the second frame portion 42b at a position that is substantially the center of the second flow-through region 22e in the X-axis direction. Thus, the second frame portion 42b can be disposed equally on both sides of the connection portion 26 in the X-axis direction. Therefore, stress can be efficiently suppressed from being transmitted to the main body portion 30 of the first movable portion 22.

[0130] In each third portion 43, the second flow-through region 22e is formed. Each third portion 43 has a first frame portion 43a on the side opposite the main body portion 30 with respect to the second flow-through region 22e, and a second frame portion 43b on the side opposite the first frame portion 43a with respect to the second flow-through region 22e. The first frame portion 43a is a portion of the first movable portion 22 that is outside the second flow-through region 22e. The second frame portion 43b is a portion of the first movable portion 22 that is between the first flow-through region 22d and the second flow-through region 22e. The first frame portion 43a and the second frame portion 43b extend along the second flow-through region 22e. The width D5 of the first frame portion 43a in the radial direction is greater than the width D6 of the second frame portion 43b in the radial direction.

[0131] Each second frame portion 43b functions as a stress relaxation region. Specifically, for example, in a case in which the first movable portion 22 receives stress from the outside, the second frame portion 43b is locally deformed, as a result of which the stress is suppressed from being transmitted to the main body portion 30 of the first movable portion 22. Thus, deformation of the mirror layer 3 and the like can be suppressed.

[0132] Each third portion 43 is connected with the main body portion 30 through the connection portion 26. Specifically, the connection portion 26 connects the second frame portion 43b with the main body portion 30. In each third portion 43, the connection portion 26 spans the first flow-through region 22d in the radial direction (the direction in which the first flow-through region 22d and the second flow-through region 22e are arranged). In each third portion 43, the connection portion 26 spans the portion of the first flow-through region 22d that coincides with the second flow-through region 22e in the radial direction. The connection portion 26 that connects the third portion 43 with the main body portion 30 is formed in the first flow-through region 22d between the connection portion 26 that connects the second portion 42 with the main body portion 30 and the first connection portion 24. The connection portion 26 that connects the third portion 43 with the main body portion 30 is formed in the portion of the first flow-through region 22d that coincides with the third portion 43.

[0133] In each third portion 43, the connection portion 26 is adjacent to the second flow-through region 22e in the radial direction. That is, the connection portion 26 is formed in correspondence with the second flow-through region 22e. In each third portion 43, the connection portion 26 connects with the second frame portion 43b at a position that is on the opposite side from the first connection portion 24 with respect to the center line X3 of the second flow-through region 22e. In each third portion 43, the connection portion 26 is formed in the portion of the first flow-through region 22d that coincides with the second flow-through region 22e on the opposite side from the first connection portion 24 in the radial direction. That is, in each third portion 43, the connection portion 26 connects with the second frame portion 43b at a position that is separate from the first connection portion 24. Thus, in each third portion 43, the distance from the end of the second frame portion 43b on the side of the first connection portion 24 (the end that is close to the first connection portion 24) to the connection portion 26 is lengthened. That is, the region in the second frame portion 43b in which stress transmitted from the first connection portion 24 is relaxed is lengthened. Therefore, it is effective to inhibit stress transmitted from the first connection portion 24, for example, from being transmitted to the main body portion 30 of the first movable portion 22 via the connection portion 26. Thus, it is possible to effectively inhibit deformation and the like of the mirror layer 3. In addition, the center line X3 is a line that extends in the radial direction and is a center in the direction of extension of the second flow-through region 22e in the third portion 43.

[0134] In the portion of the first flow-through region 22d that coincides with the third portion 43, the connection portion 26 can not be formed. The connection portion 26 can be formed in the portion of the first flow-through region 22d that is on the side of the first connection portion 24 farther than the third portion 43.

[0135] The first movable portion 22, in the case where viewed from the Z-axis direction, in the case where an N-gon, the larger N is (for example, in the case where N is 8), compared with the case where the first movable portion 22 is, for example, a rectangular shape, the distance (distance along the outer edge of the first movable portion 22) of the pair of connection portions 26 connecting each second portion 42 and the first connection portion 24 is smaller. As a result, the stress transmitted to the main body portion 30 from the first connection portion 24 via the pair of connection portions 26 is likely to increase. Therefore, it is preferable to suppress the transmission of stress to the main body portion 30 by providing not only the pair of connection portions 26 but also, as described above, a connection portion 26 between the connection portion 26 and the first connection portion 24. Furthermore, it is particularly preferable to provide a connection portion 26 between a third portion 43 different from the second portion 42 and the main body portion 30. By connecting each second portion 42 and each third portion 43 to the main body portion 30 by the connection portions 26, respectively, it is possible to further reduce the stress transmitted to the main body portion 30 from the first connection portion 24. In the present embodiment, as described above, one pair of second portions 42 and two pairs of third portions 43 are connected to the main body portion 30 by three pairs of connection portions 26.

[0136] The first coil 221 of the mirror device 1C extends in a spiral shape further outward (outer edge portion of the first movable portion 22) than the first flow-through region 22d in the case where viewed from the Z-axis direction. Specifically, the first coil 221, in each first portion 41, is disposed between the first flow-through region 22d and the second flow-through region 22e (between the first flow-through region 22d and the second flow-through region 22e present on the first axis X1), and in each second portion 42 and each third portion 43, is disposed further outward than the second flow-through region 22e (between the second flow-through region 22e provided corresponding to the connection portion 26 and the outer edge of the first movable portion 22). That is, the first coil 221 is disposed in the second frame portion 41b in each first portion 41, and in the first frame portion 42a and the first frame portion 43a in each second portion 42 and each third portion 43. The first coil 221 is, for example, a drive coil and / or a sense coil.

[0137] When the first coil 221 is disposed in the second frame portion 41b in each first portion 41, since the first frame portion 41a is present between the first link portion 24 and the first coil 221, for example, it is possible to suppress transmission of stress generated in the first link portion 24 or the second link portion 25 to the first coil 221. Thus, it is possible to prevent damage to the first coil 221. Further, when the first coil 221 is disposed in the first frame portion 42a and the first frame portion 43a in each second portion 42 and each third portion 43, it is possible to avoid the second frame portion 42b and the second frame portion 43b that function as stress relaxation regions that are relatively easily deformed, and it is possible to prevent damage to the first coil 221. Further, when the first coil 221 is disposed in the first frame portion 42a and the first frame portion 43a in each second portion 42 and each third portion 43, it is possible to make the width D4 of the second frame portion 42b in the radial direction and the width D6 of the second frame portion 43b in the radial direction sufficiently small, and it is possible to sufficiently function the second frame portion 42b and the second frame portion 43b as stress relaxation regions.

[0138] Next, the manufacturing method of the mirror device 1C will be described. The manufacturing method of the mirror device 1C mainly differs from the manufacturing method of the mirror device 1A of the first embodiment in that the flow-through hole 22b including the first flow-through region 22d and the second flow-through region 22e is formed, the flow-through hole 23b that communicates with the first slit 22a is formed, and the flow-through hole 25b is formed in the second link portion 25. Detailed description of the portions of the manufacturing method of the mirror device 1C that are the same as the manufacturing method of the mirror device 1A will be omitted.

[0139] In the manufacturing method of the mirror device 1C, in the second process, portions of the device layer corresponding to the first slit 22a, the second slit 23a, regions of the first flow-through region 22d other than the connection portion 26, the second flow-through region 22e, the flow-through hole 23b, and the flow-through hole 25b are removed. Further, in the manufacturing method of the mirror device 1C, in the second process, portions of the intermediate layer that are more inward than portions corresponding to the base portion 21 are removed. As a result, the first slit 22a and the second slit 23a are formed, and the plurality of first movable portions 22 and the plurality of second movable portions 23 are released.

[0140] Further, in the manufacturing method of the mirror device 1C, in the second process, the plurality of through-holes 22b, 23b, 25b are formed in the wafer, other than the first slit 22a and the second slit 23a, by removing a part of the intermediate layer 13 from the wafer as described above. Specifically, in the manufacturing method of the mirror device 1C, in the second process, the through-hole 22b is formed in the wafer in the portion corresponding to the first movable portion 22, the through-hole 23b is formed in the portion corresponding to the second movable portion 23, and the through-hole 25b is formed in the portion corresponding to the second connecting portion 25.

[0141] Specifically, in the manufacturing method of the mirror device 1C, in the second process, the through-hole 23b is formed so as to communicate with the first slit 22a. Further, in the manufacturing method of the mirror device 1C, in the second process, the through-hole 22b is formed in the portion corresponding to the first movable portion 22 so as to include, in a view from the Z-axis direction, the first flow-through region 22d and the second flow-through region 22e adjacent to each other in the radial direction. Further, in the manufacturing method of the mirror device 1C, in the second process, the through-hole 22b is formed so as to include, in a view from the Z-axis direction, the portion in which the width of the second flow-through region 22e in the radial direction is smaller than the width of the first flow-through region 22d in the radial direction.

[0142] Further, in the manufacturing method of the mirror device 1C, in the second process, the first slit 22a is formed so that the first movable portion 22 is supported by the first connecting portion 24 on the base portion 21. Further, in the manufacturing method of the mirror device 1C, in the second process, the second flow-through region 22e is formed so as to be adjacent to the first connecting portion 24 in the radial direction in a view from the Z-axis direction. Further, in the manufacturing method of the mirror device 1C, in the second process, the second slit 23a is formed so that the second movable portion 23 is supported by the second connecting portion 25 on the base portion 21. Further, in the manufacturing method of the mirror device 1C, in the second process, the through-hole 25b is formed in the portion corresponding to the second connecting portion 25.

[0143] As described above, according to the manufacturing method of the mirror device 1C, similarly to the manufacturing method of the mirror device 1A of the first embodiment described above, it is possible to suppress the generation of damage and the remaining of foreign matter of the mirror device 1C.

[0144] Further, in the manufacturing method of the mirror device 1C, in the step S7, the first slit 22a and the second slit 23a are formed in a manner that the first movable portion 22 and the second movable portion 23 are supported by the first link portion 24 and the second link portion 25 to the base portion 21, respectively, and the through hole 25b is formed in a portion corresponding to the second link portion 25. Thereby, in the wet cleaning of the step S7, since turbulence of the cleaning liquid is easily generated in the vicinity of the second link portion 25, the strength of the second link portion 25 can be maintained and foreign matters can be reliably removed from the portion corresponding to the second link portion 25.

[0145] Further, in the manufacturing method of the mirror device 1C, in the step S7, the through hole 23b is formed in a manner that the through hole 23b communicates with the first slit 22a. Thereby, in the wet cleaning of the step S7, a larger amount of the cleaning liquid can be made to flow through the through hole 23b.

[0146] Further, in the manufacturing method of the mirror device 1C, in the step S7, the through hole 22b is formed in a portion corresponding to the first movable portion 22 in a manner that, when viewed from the Z-axis direction, the through hole 22b includes the first flow-through region 22d and the second flow-through region 22e adjacent to each other in the radial direction. Thereby, in the wet cleaning of the step S8, since turbulence of the cleaning liquid is easily generated at a place where the first flow-through region 22d and the second flow-through region 22e are adjacent to each other, foreign matters can be reliably removed from the wafer 10W.

[0147] Further, in the manufacturing method of the mirror device 1C, in the step S7, the through hole 22b is formed in a manner that, when viewed from the Z-axis direction, the connection portion 26 spanning the first flow-through region 22d in the radial direction is formed. Thereby, in the wet cleaning of the step S8, since the wafer 10W is reinforced by the connection portion 26, generation of damage to the wafer 10W can be suppressed. Further, in the wet cleaning of the step S8, since the cleaning liquid can flow through the second flow-through region 22e, the load on the connection portion 26 by the cleaning liquid can be reduced, and generation of damage to the connection portion 26 can be suppressed.

[0148] Further, in the manufacturing method of the mirror device 1C, in the step S7, the through hole 22b is formed in a manner that, when viewed from the Z-axis direction, the second flow-through region 22e includes a portion in which the width of the second flow-through region 22e in the radial direction is smaller than the width of the first flow-through region 22d in the radial direction. Thereby, since the width of the first flow-through region 22d and the width of the second flow-through region 22e are different, turbulence of the cleaning liquid is easily generated in the wet cleaning of the step S8. Therefore, foreign matters can be reliably removed from the wafer 10W.

[0149] Furthermore, in the manufacturing method of the reflector device 1C, in step S7, a first slit 22a and a second slit 23a are formed such that the first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively. The second flow region 22e is formed such that, when viewed from the Z-axis direction, it is adjacent to the first connecting part 24 in the direction in which the first flow region 22d and the second flow region 22e are arranged. Therefore, during the wet cleaning in step S8, since the cleaning fluid can flow through the second flow region 22e, the load on the first connecting part 24 due to the cleaning fluid can be reduced, and damage to the first connecting part 24 can be suppressed.

[0150] [Fourth Implementation Method]

[0151] like Figure 18 As shown, the mirror device 1D of the fourth embodiment differs from the mirror device 1A of the first embodiment mainly in that the first movable part 22 has a flow hole 22f and the flow hole 23b communicates with the first slit 22a. Detailed descriptions of the parts of the mirror device 1D that are the same as those of the mirror device 1A are omitted.

[0152] A flow hole 22f is formed in the first movable portion 22 of the structure 2D. Viewed from the Z-axis direction, the flow hole 22f extends along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, the flow hole 22f is, for example, annular. Multiple connecting portions 26 are formed across the flow hole 22f in the first movable portion 22. For example, four connecting portions 26 are formed in the first movable portion 22. Viewed from the Z-axis direction, each connecting portion 26 is formed at both ends of the first movable portion 22 in the Y-axis direction. Thus, the flow hole 22b is divided into multiple regions.

[0153] The portion of the first movable part 22 inside the flow hole 22f constitutes the main body part 30. The portion of the first movable part 22 outside the flow hole 22f constitutes the annular part 40. In top view, the main body part 30 is circular, but it can also be formed into any shape such as an ellipse, a quadrilateral, or a rhombus. In top view, the center of the main body part 30 coincides with the intersection of the first axis X1 and the second axis X2. The annular part 40 is formed in a ring shape, surrounding the main body part 30 through the flow hole 22f in top view. The annular part 40 has a hexagonal shape in top view, but it can also have any shape such as a circle, an ellipse, a quadrilateral, or a rhombus. The main body part 30 and the annular part 40 are connected to each other by multiple connecting parts 26.

[0154] The second movable portion 23 of the mirror device 1D is formed in a frame shape so as to be arranged on the inner side of the base portion 21 so as to surround the first movable portion 22. The second movable portion 23 has a pair of first connecting portions 41A, 41B, a pair of second connecting portions 42A, 42B, a pair of first linear portions 43A, 43B, a pair of second linear portions 44A, 44B, a pair of third linear portions 45A, 45B, and a pair of fourth linear portions 46A, 46B. The second movable portion 23 has a shape symmetrical about each of the first axis X1 and the second axis X2 in plan view. In the following description, symmetry about the first axis X1 or the second axis X2 means symmetry in plan view.

[0155] The first connecting portions 41A, 41B are located on both sides of the first movable portion 22 in the X-axis direction. That is, each of the first connecting portions 41A, 41B has a portion opposite the first movable portion 22 in the X-axis direction in plan view. Each of the first connecting portions 41A, 41B extends in the Y-axis direction.

[0156] The second connecting portions 42A, 42B are located on both sides of the first movable portion 22 in the Y-axis direction. That is, each of the second connecting portions 42A, 42B has a portion opposite the first movable portion 22 in the Y-axis direction in plan view. Each of the second connecting portions 42A, 42B is provided so as to extend in the X-axis direction.

[0157] The first linear portions 43A, 43B are located on both sides of the second connecting portion 42A in the X-axis direction and are connected to the second connecting portion 42A. Each of the first linear portions 43A, 43B extends in the X-axis direction. The first linear portions 43A, 43B are arranged symmetrically with respect to the Y-axis. The second linear portions 44A, 44B are located on both sides of the second connecting portion 42B in the X-axis direction and are connected to the second connecting portion 42B. Each of the second linear portions 44A, 44B extends in the X-axis direction. The second linear portions 44A, 44B are arranged symmetrically with respect to the Y-axis.

[0158] The third linear portions 45A, 45B are located on opposite sides of each of the first linear portions 43A, 43B with respect to the second connecting portion 42A and are connected to the first linear portions 43A, 43B and the first connecting portions 41A, 41B. In plan view, the third linear portion 45A extends in a direction inclined by 45 degrees with respect to each of the X-axis and the Y-axis. The third linear portion 45B extends symmetrically with respect to the third linear portion 45A with respect to the Y-axis.

[0159] The fourth linear portions 46A, 46B are located on the opposite side with respect to the second linear portions 44A, 44B and the second connecting portions 42B, and are connected with the second linear portions 44A, 44B and the first connecting portions 41A, 41B. The fourth linear portion 46A extends symmetrically with respect to the third linear portion 45A about the X axis. The fourth linear portion 46B extends symmetrically with respect to the fourth linear portion 46A about the Y axis, and symmetrically with respect to the third linear portion 45B about the X axis.

[0160] Each first connecting portion 24 is connected with the first connecting portions 41A, 41B and the second movable portion 23. In the present embodiment, in order to moderate stress acting on the first connecting portion 24, the width (width in the Y axis direction) of the end portion on the first movable portion 22 side of each first connecting portion 24 is wider closer to the first movable portion 22, and the width (width in the Y axis direction) of the end portion on the second movable portion 23 side is wider closer to the second movable portion 23.

[0161] Each second connecting portion 25 is connected with the second connecting portions 42A, 42B and the second movable portion 23. Each second connecting portion 25 extends meanderingly in plan view. Each second connecting portion 25 has a plurality of linear portions and a plurality of turn-back portions. The linear portions extend in the Y axis direction, and are arranged in the X axis direction. The turn-back portions alternately connect both ends of adjacent linear portions.

[0162] A flow-through hole (flow-through auxiliary region) 23b is formed in the second movable portion 23, and communicates with the first slits 22a. The flow-through hole 23b includes four first portions 23c and two second portions 23d. In a case where viewed from the Z axis direction, each first portion 23c is arranged axially symmetrically with respect to the first axis X1 and the second axis X2 with each other on the outside of the first movable portion 22. Each first portion 23c is formed by a portion of the first slit 22a expanding to the opposite side of the first movable portion 22 in the X axis direction. Each second portion 23d is located between a pair of first portions 23c on both sides of the first movable portion 22 in the Y axis direction, respectively. Each second portion 23d is formed by a portion of the first slit 22a expanding to the opposite side of the first movable portion 22 in the Y axis direction. Each second portion 23d communicates with each first slit 22a, respectively. In Figure 18 In FIG. 10, the boundary line between the flow-through hole 23b and the first slit 22a is indicated by a dotted line.

[0163] The mirror device 1D also has a pair of coils 14, 15. Each coil 14, 15 is disposed in the second movable portion 23 in a manner of surrounding the first movable portion 22, and is in a spiral shape in plan view (in a case where viewed from a direction orthogonal to a plane in which each coil 14, 15 is disposed). Each coil 14, 15 is disposed along a plane including the X-axis and the Y-axis. Each coil 14, 15 is wound around the first movable portion 22 by a plurality of turns. The pair of coils 14, 15 is disposed in a manner of being arranged in a staggered manner in a width direction of the second movable portion 23 in plan view. The first movable portion 22 is not provided with a coil.

[0164] Next, a manufacturing method of the mirror device 1D will be described. The manufacturing method of the mirror device 1D is mainly different from the manufacturing method of the mirror device 1A of the first embodiment in that a flow-through hole 22f is formed in the first movable portion 22, and a flow-through hole 23b that communicates with the first slit 22a is formed. Detailed description of a portion of the manufacturing method of the mirror device 1D that is the same as the manufacturing method of the mirror device 1A will be omitted.

[0165] In the manufacturing method of the mirror device 1D, in the second process, portions of the device layer corresponding to the first slit 22a, the second slit 23a, the flow-through hole 22f, and the flow-through hole 23b are removed. Further, in the manufacturing method of the mirror device 1D, in the second process, a portion of the intermediate layer that is more inward than a portion corresponding to the base portion 21 is removed. As a result, the first slit 22a and the second slit 23a are formed, and the plurality of first movable portions 22 and the plurality of second movable portions 23 are released.

[0166] Further, in the manufacturing method of the mirror device 1D, in the second process, as described above, by removing a portion of the intermediate layer 13 from the wafer, a plurality of flow-through holes 22f, 23b that penetrate the wafer are formed in portions of the wafer other than the first slit 22a and the second slit 23a. Specifically, in the manufacturing method of the mirror device 1D, in the second process, in a portion of the wafer corresponding to the first movable portion 22, a flow-through hole 22f that penetrates the wafer is formed, and in a portion corresponding to the second movable portion 23, a flow-through hole 23b that penetrates the wafer is formed.

[0167] As described above, according to the manufacturing method of the mirror device 1D, as with the manufacturing method of the mirror device 1A of the first embodiment described above, it is possible to suppress generation of damage and remaining of foreign matter of the mirror device 1D.

[0168] [Modified Example]

[0169] The above describes one embodiment of the present disclosure, but the present disclosure is not limited to the above-described embodiment.

[0170] In each embodiment, an example in which a part of the device layer 12, a part of the support layer 11, and a part of the intermediate layer 13 are sequentially removed from the wafer 10W is shown, but is not limited thereto. A part of the support layer 11, a part of the device layer 12, and a part of the intermediate layer 13 can be sequentially removed from the wafer 10W. In this case, the patterned member removal and the protective film removal are performed before a part of the intermediate layer 13 is removed from the wafer 10W. Further, a part of the support layer 11, a part of the intermediate layer 13, and a part of the device layer 12 can be sequentially removed from the wafer 10W. In this case, the patterned member removal and the protective film removal are performed before a part of the device layer 12 is removed from the wafer 10W. That is, in these cases, the first movable portion 22 and the second movable portion 23 can be released after the patterned member removal and the protective film removal.

[0171] Further, in each embodiment, an example in which the patterned member 19, 29, 39 is removed according to a wet process in the patterned member removal is shown, but the patterned member 19, 29, 39 can be removed from the wafer 10W according to a dry process in the patterned member removal. Similarly, in each embodiment, an example in which the protective film is removed according to a wet process in the protective film removal is shown, but the protective film can be removed from the wafer 10W according to a dry process in the protective film removal. In these cases, a part of the device layer 12, a part of the intermediate layer 13, and a part of the support layer 11 can be sequentially removed from the wafer 10W. That is, in these cases, the patterned member removal and the protective film removal can be performed after the first movable portion 22 and the second movable portion 23 are released. Further, in each embodiment, an example in which the protective film removal is performed after the patterned member removal is performed is shown, but the patterned member removal can be performed after the protective film removal is performed.

[0172] Moreover, in the first embodiment, an example is shown in which the first slit 22a, the second slit 23a, and the flow-through holes 21b, 22b, 23b are formed by removing a portion of the intermediate layer 13 that is more inward than the portion corresponding to the base portion 21 and the portion corresponding to the flow-through hole 21b, but this is not limiting. The order in which the first slit 22a, the second slit 23a, and the flow-through holes 21b, 22b, 23b are formed can be arbitrary. For example, the flow-through holes 21b, 22b, 23b can be formed after the first slit 22a and the second slit 23a are formed, that is, after the first movable portion 22 and the second movable portion 23 are released. In this case, the portion of the wafer 10W corresponding to the first slit 22a and the second slit 23a can be removed first, and then the portion corresponding to the flow-through holes 21b, 22b, 23b can be removed. Moreover, the first slit 22a and the second slit 23a can be formed after the flow-through holes 21b, 22b, 23b are formed. In this case, the portion of the wafer 10W corresponding to the flow-through holes 21b, 22b, 23b can be removed first, and then the portion corresponding to the first slit 22a and the second slit 23a can be removed.

[0173] Moreover, in the first embodiment, an example is shown in which the correction layer 4 is formed with respect to the back surface 10b of the wafer 10W, but the correction layer 4 can also be formed with respect to the surface 10a of the wafer 10W. Specifically, the correction layer 4 can also be formed on the base portion 21, the second movable portion 23, each first connecting portion 24, and each second connecting portion 25 on the side of the device layer 12 opposite the intermediate layer 13. The correction layer 4 can also be formed on the first movable portion 22 on the side of the device layer 12 opposite the intermediate layer 13 and on the side of the mirror layer 3 opposite the device layer 12. Moreover, the correction layer 4 can be formed with respect to the surface 10a and with respect to the back surface 10b. That is, the correction layer 4 is formed with respect to the surface 10a and / or the back surface 10b.

[0174] Moreover, as described above, the correction layer 4 can be formed with respect to the surface 10a and with respect to the back surface 10b. In this case, the correction layer 4 can be formed on the side of the device layer 12 opposite the intermediate layer 13 and on the side of the mirror layer 3 opposite the device layer 12. In this case, the correction layer 4 can be formed on the side of the device layer 12 opposite the intermediate layer 13 and on the side of the mirror layer 3 opposite the device layer 12. Figure 19(a) As shown, the width of each flow hole 22b in the X-axis direction (a direction perpendicular to the thickness direction of the wafer 10W) varies when viewed from the Z-axis direction. That is, the width of each flow hole 22b in the X-axis direction can be different from each other at different positions in the Y-axis direction when viewed from the Z-axis direction. Specifically, the width of the central portion of each flow hole 22b in the Y-axis direction can be greater than the width of the both end portions in the Y-axis direction. Each flow hole 22b can also include a curved portion at least in a part when viewed from the Z-axis direction. Each flow hole 22b can also have different shapes of the edge on one side and the edge on the other side in the X-axis direction when viewed from the Z-axis direction. Each flow hole 22b can also have a crescent shape that surrounds the mirror layer 3 when viewed from the Z-axis direction. In these cases, in the wet cleaning in the third process, it is easy to generate a complex water flow in the vicinity of each flow hole 22b, and thus the cleaning efficiency by the wet cleaning is improved.

[0175] In the second process of each embodiment, each flow hole 22b can also be formed in a manner that the width in the X-axis direction varies when viewed from the Z-axis direction. Thereby, in the wet cleaning in the third process, it becomes easy to generate a turbulent flow of the cleaning liquid, and thus the foreign matter can be reliably removed from the wafer 10W. In the second process of each embodiment, each flow hole 22b can also be formed in a manner that a curved portion is included at least in a part. Since the load on the curved portion of the flow hole 22b by the cleaning liquid is smaller in the wet cleaning in step S8, the generation of damage to the mirror device 1A can be suppressed. In the second process of each embodiment, each flow hole 22b can also be formed in a manner that the edge on one side and the edge on the other side have different shapes when viewed from the Z-axis direction. Since a larger flow hole 22b is formed, a larger amount of the cleaning liquid can flow through the flow hole 22b in the wet cleaning in the third process. Thus, the foreign matter can be reliably removed from the wafer 10W. In addition, the structure 2A, 2B, 2C, 2D can also not have the second movable portion 23. In this case, the first movable portion 22 is disposed inside the base portion 21 via the first slit 22a when viewed from the Z-axis direction. In addition, each first connecting portion 24 can also be disposed on both sides of the first movable portion 22 in the Y-axis direction, respectively, when viewed from the Z-axis direction.

[0176] Further, as shown in FIG. 9, the first movable portion 22 can also be disposed inside the base portion 21 via the first slit 22a when viewed from the Z-axis direction. In this case, the first connecting portion 24 can also be disposed on one side of the first movable portion 22 in the Y-axis direction when viewed from the Z-axis direction. Figure 19(b) As shown, the flow holes 22b are circular ring-shaped with the intersection of the first axis X1 and the second axis X2 as the center when viewed from the Z-axis direction. In this case, the first movable portion 22 is formed with the connection portions 26 that span the flow holes 22b. The first movable portion 22 is formed with, for example, four connection portions 26. The connection portions 26 are arranged at the same intervals in the circumferential direction of the flow holes 22b when viewed from the Z-axis direction. Thus, the flow holes 22b are divided into a plurality of regions. The first movable portion 22 is point-symmetrical about the intersection of the first axis X1 and the second axis X2 when viewed from the Z-axis direction. In this case, the first movable portion 22 can be appropriately reinforced by the connection portions 26, and the area of the first movable portion 22 occupied by the flow holes 22b can be increased. Thus, a larger amount of cleaning liquid can flow through the flow holes 22b in the wet cleaning of the third process. Thus, the foreign matter can be reliably removed from the wafer 10W. Further, since the first movable portion 22 is point-symmetrical, the generation of damage to the first movable portion 22 can be suppressed in the wet cleaning of the third process.

[0177] Further, in the second process of each embodiment, the flow holes 22b can also be formed in a manner that the connection portions 26 that span the flow holes 22b are formed. In the second process of each embodiment, the flow holes other than the flow holes 22b can also be formed in a manner that the connection portions that span the flow holes other than the flow holes 22b (for example, the flow holes 23b) are formed. Thus, in the wet cleaning of the third process, since the wafer 10W is reinforced by the connection portions 26, the generation of damage to the mirror device 1A can be suppressed. In addition, the first movable portion 22 can also be circular when viewed from the Z-axis direction.

[0178] Further, as shown in Figure 19 (c), the pair of flow holes 22b can be axially symmetrical to each other with respect to the first axis X1. Each flow hole 22b can also be crescent-shaped that surrounds the mirror layer 3 when viewed from the Z-axis direction. In this case, in the wet cleaning of the third process, a complex water flow is easily generated in the vicinity of each flow hole 22b, and thus the cleaning efficiency by the wet cleaning is improved. In addition, the first movable portion 22 can also be elliptical when viewed from the Z-axis direction with the major axis extending in the Y-axis direction.

[0179] Further, as shown in Figure 20 (a), the flow holes 23b are not formed in the second movable portion 23. Further, as shown in Figure 20 (b), the flow holes 22b are not formed in the first movable portion 22.

[0180] Further, as shown in Figure 21As shown, the flow-through holes 22b, 23b are not formed. That is, the flow-through holes 21b can be formed only in the base portion 21.

[0181] Further, as shown, a pair of flow-through holes 24b can be formed on both sides of each of the first link portions 24 in the X-axis direction. Each of the flow-through holes 24b penetrates the base portion 21. Each of the flow-through holes 24b is located more inward in the X-axis direction than each of the first slits 22a. Further, the flow-through holes 21b can not be formed in the base portion 21. Figure 22

[0182] Further, the flow-through holes 21b, 22b, 23b, 24b, 25b can not be formed for the purpose of allowing the cleaning liquid to flow therethrough. The flow-through holes 21b, 22b, 23b, 24b, 25b can be simple through holes or through regions.

[0183] Further, the following inventions can be extracted from each of the above embodiments.

[0184] Invention 1: An optical scanning device including: a base portion; a movable portion supported on the base portion; a link portion linked to the movable portion in a manner that the movable portion is movable with respect to the base portion; and a mirror layer provided on the movable portion, in the movable portion, a first through region extending in a ring shape along an outer edge of the movable portion, a plurality of second through regions located more outward than the first through region, and a connection portion across a portion of the first through region coinciding with the second through region are formed, a width of a portion of the movable portion outward of the second through region is greater than a width of a portion of the movable portion between the first through region and the second through region.

[0185] Invention 2: The optical scanning device according to Invention 1, wherein the second through region is formed at a position on a center line of the link portion.

[0186] Invention 3: The optical scanning device according to Invention 1 or 2, wherein the connection portion is formed in a portion of the first through region coinciding with the second through region on an opposite side from the link portion.

[0187] Invention 4: The optical scanning device according to any one of Inventions 1 to 3, wherein the portion of the movable portion outward of the first through region includes an inclined portion obliquely intersecting a center line of the link portion.

[0188] Invention 5: The optical scanning device according to any one of Inventions 1 to 4, wherein the movable portion has an N (N is a natural number of 5 or more) -sided shape.

[0189] ​Invention 6: The optical scanning device according to any one of Inventions 1 to 5, wherein a portion of the movable portion outside the first through region includes an inclined portion that is oblique to a center line of the link portion, the connection portion is formed in the first through region on an opposite side to the link portion with respect to the inclined portion, and the connection portion is further formed in the first through region between the link portion and the connection portion formed on the opposite side to the link portion with respect to the inclined portion.

[0190] Invention 7: The optical scanning device according to Invention 6, wherein the connection portion formed in the first through region between the link portion and the connection portion formed on the opposite side to the link portion with respect to the inclined portion is formed on a side closer to the link portion than a portion of the first through region that coincides with the inclined portion or the inclined portion of the first through region.

[0191] Invention 8: The optical scanning device according to any one of Inventions 1 to 7, further comprising a coil that extends in an outer edge portion of the movable portion, the second through region is formed at a position on a center line of the link portion and a position separate from the center line of the link portion, and the coil is disposed between the second through region formed at the position on the center line of the link portion and the first through region and between the second through region formed at the position separate from the center line of the link portion and an outer edge of the movable portion.

[0192] Explanation of Reference Signs

[0193] 1A, 1B, 1C, 1D... mirror device; 2A, 2B, 2C, 2D... structure; 3 mirror layer; 4... correction layer; 10W... wafer; 10a... front surface; 10b... back surface; 11... support layer; 12... device layer; 13... intermediate layer; 11a, 11b, 11c, 12a, 12b, 13a, 13b, 13c... end surface; 19... patterned member; 21... base portion; 22... first movable portion; 22a... first slit; 23... second movable portion; 23a... second slit; 21b, 22b, 22f, 23b, 24b, 25b... flow-through hole; 22d... first flow-through region; 22e... second flow-through region; 24... first link portion; 25... second link portion; 26... connection portion.

Claims

1. A method for manufacturing a reflective mirror device, wherein, The mirror device includes: a structure comprising a base and a movable portion supported on the base, and a mirror layer disposed on the movable portion. The method for manufacturing the mirror device includes: The first step in preparing a wafer with a support layer and a device layer; After the first process, a second process is performed in which a portion of each of the support layer and the device layer is removed from the wafer by etching, a slit is formed on the wafer in such a way that the movable portion is movable relative to the base, and multiple portions corresponding to the structure are formed on the wafer respectively. After the second step, a third step of wet cleaning of the wafer by cleaning it with a cleaning solution is performed; as well as Following the third process, a fourth process involves dicing each of the plurality of portions from the wafer. In the second step, through the etching, a through-hole is formed in the wafer, outside the slit. In the third step, the wet cleaning is performed by allowing the cleaning fluid to flow through the flow hole.

2. The method for manufacturing the reflective device according to claim 1, wherein, In the second process, the mirror layer is formed in the portion of the wafer corresponding to the movable part.

3. The method for manufacturing the reflective device according to claim 2, wherein, Between the third and fourth steps, a fifth step is further provided: forming a correction layer on the first surface of the wafer on which the mirror layer is formed and / or on the second surface opposite to the first surface.

4. The method for manufacturing the reflector device according to any one of claims 1 to 3, wherein, In the second process, after a portion of the support layer is removed from the wafer, protective film removal is performed to remove the protective film, and after the protective film removal, the plurality of parts are completed.

5. The method for manufacturing the reflective device according to claim 4, wherein, In the removal of the protective film, the protective film is removed according to a wet process.

6. The method for manufacturing the reflector device according to any one of claims 1 to 5, wherein, In the second step, patterned component removal is performed to remove the patterned components, and after the patterned component removal, the plurality of parts are completed.

7. The method for manufacturing the reflective device according to claim 6, wherein, In the removal of the patterned component, the patterned component is removed according to a wet process.

8. A method for manufacturing a reflective device according to any one of claims 1 to 7, wherein, In the second process, a plurality of flow holes are formed in the portion corresponding to the movable part.

9. A method for manufacturing a reflective device according to any one of claims 1 to 8, wherein, In the second step, the flow hole is formed in the portion corresponding to the base.

10. A method for manufacturing a reflective device according to any one of claims 1 to 9, wherein, In the second step, the slit is formed such that the movable part is supported on the base by the connecting part, and the flow hole is formed in the portion corresponding to the connecting part.

11. The method for manufacturing the reflector device according to any one of claims 1 to 10, wherein, In the second step, the flow hole is formed in such a way that at least a portion of it includes a bend.

12. The method for manufacturing the reflector device according to any one of claims 1 to 11, wherein, In the second process, the flow-through hole is formed in such a way that the width of the flow-through hole varies in a direction perpendicular to the thickness direction when viewed from the thickness direction of the wafer.

13. The method for manufacturing the reflective device according to any one of claims 1 to 12, wherein, In the second process, the flow hole is formed in such a way that, when viewed from the thickness direction of the wafer, the edge of one side of the flow hole and the edge of the other side, which is opposite to the edge of the first side, have different shapes.

14. The method for manufacturing the reflector device according to any one of claims 1 to 13, wherein, In the second step, the flow hole is formed in such a way that a connecting portion spanning the flow hole is formed.

15. The method for manufacturing the reflector device according to any one of claims 1 to 14, wherein, In the second step, the flow hole is formed in such a way that the flow hole communicates with the slit.

16. The method for manufacturing a reflective device according to any one of claims 1 to 15, wherein, In the second process, the flow hole is formed in the portion corresponding to the movable part in such a way that, when viewed from the thickness direction of the wafer, the flow hole includes a first flow region and a second flow region that are adjacent to each other in a direction perpendicular to the thickness direction.

17. The method for manufacturing a reflective device according to claim 16, wherein, In the second process, the flow hole is formed such that, when viewed from the thickness direction, a connecting portion spanning the first flow area is formed in the direction in which the first flow area and the second flow area are arranged.

18. The method for manufacturing a reflective device according to claim 16 or 17, wherein, In the second step, the flow hole is formed such that, when viewed from the thickness direction, the width of the second flow area in the direction perpendicular to the thickness direction is smaller than the width of the first flow area in the direction perpendicular to the thickness direction.

19. A method for manufacturing a reflective device according to any one of claims 16 to 18, wherein, In the second process, the slit is formed such that the movable part is supported on the base by the connecting part, and the second flow area is formed such that, when viewed from the thickness direction, the second flow area is adjacent to the connecting part in the direction in which the first flow area and the second flow area are arranged.

20. A method for manufacturing a reflective device according to any one of claims 1 to 19, wherein, In the third step, while the wafer is immersed in the cleaning solution, the wafer is cleaned by oscillating it in a direction that intersects with the surface of the cleaning solution.

21. The method for manufacturing a reflective device according to any one of claims 1 to 20, wherein, In the third step, the wafer is cleaned while the wafer and the co-wafer are arranged along the thickness direction of the wafer.

22. The method for manufacturing a reflective device according to any one of claims 1 to 21, wherein, In the third step, multiple wafers, each serving as a wafer, are arranged in a carrier along the thickness direction of the wafer, and the multiple wafers are immersed in the cleaning solution in such a way that the opening of the carrier is oriented in the same direction as the surface of the cleaning solution.

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