Power isolation circuit for a heater element of a substrate support of a substrate processing system

Abstract

A substrate processing system includes a substrate support and a power supply circuit. The substrate support is configured to support a substrate, wherein the substrate support includes one or more heating elements. The power supply circuit includes a DC-AC converter configured to convert a first DC voltage to a first AC voltage, wherein the DC-AC converter includes at least one switch; and an isolation circuit including one of a coupled inductor or a transformer. The coupled inductor or the transformer is configured to convert the first AC voltage to a second AC voltage and isolate the one or more heating elements from ground. The power supply circuit is configured to provide an output voltage to the one or more heating elements based on the second AC voltage.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of U.S. Provisional Application No. 62 / 912,596, filed on October 8, 2019. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to electrostatic chucks for substrate processing systems. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. No admission is made, either explicitly or implicitly, that the work of the presently designated inventors is prior art to the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] Substrate processing systems, such as plasma-enhanced chemical vapor deposition (PECVD) processing systems, typically include a showerhead and a substrate support for supporting the substrate. During operation, the showerhead distributes reactant gases onto the substrate. A radio frequency (RF) potential is applied between two electrodes (e.g., an RF electrode in the showerhead and the substrate support) to generate a plasma. The excited electrons ionize or dissociate the reactant gases in the plasma, generating chemically reactive free radicals. When these free radicals react, a thin film is deposited and formed on the substrate.

[0006] Arcing occurs between the substrate and the substrate support, showerhead, or chamber body when, for example, a non-conductive gas dissociates and discharges current across the gap between the substrate and the substrate support. Arcing can degrade and / or damage sensitive circuitry in the substrate. This reduces process yield, leading to manufacturing losses and increased costs. Summary of the Invention

[0007] A substrate processing system is provided, comprising a substrate support and a power supply circuit. The substrate support is configured to support a substrate. The substrate support includes one or more heating elements. The power supply circuit includes a DC-AC converter configured to convert a first DC voltage into a first AC voltage, wherein the DC-AC converter includes at least one switch; and an isolation circuit including one of a coupled inductor or a transformer. The coupled inductor or the transformer is configured to convert the first AC voltage into a second AC voltage and isolate the one or more heating elements from ground. The power supply circuit is configured to provide an output voltage to the one or more heating elements based on the second AC voltage.

[0008] In other features, the isolation circuit is configured to supply the second AC voltage to the one or more heating elements.

[0009] In other features, the substrate processing system further includes a controller. The DC-AC converter includes a switch and a primary winding of the coupled inductor or the transformer. The controller is configured to switch the switch between an on and an off state at a predetermined frequency when providing power to the one or more heating elements. In other features, the predetermined frequency is between 10 kHz and 100 kHz.

[0010] In other features, the substrate processing system further includes an AC-DC converter configured to convert the second AC voltage to a second DC voltage and provide the second DC voltage to the one or more heating elements.

[0011] In other features, the one of the coupled inductor or the transformer and the AC-DC converter provide a step-down converter. The transformer is a step-down transformer.

[0012] In other features, the one of the coupled inductor or the transformer and the AC-DC converter provide a boost converter; and the transformer is a boost transformer.

[0013] In other features, the DC-AC converter includes a metal oxide semiconductor field effect transistor connected in series with a primary winding of the coupled inductor or the transformer, the AC-DC converter includes a diode connected in series with a secondary winding of the coupled inductor or the transformer, and a capacitor connected in parallel with the one or more heating elements and across the secondary winding and the diode.

[0014] In other features, the one of the coupled inductor or the transformer includes a primary winding and a secondary winding. The primary winding is connected to the ground; and the secondary winding is not connected to the ground.

[0015] In other features, the substrate processing system further includes a controller. The DC-AC converter includes an H-bridge. The H-bridge includes a first switch, a second switch, a third switch, and a fourth switch. The controller is configured to switch the first switch, the second switch, the third switch, and the fourth switch between an on and an off state when power is supplied to the one or more heating elements.

[0016] In other features, the controller is configured to: change the first switch and the fourth switch to an on state while changing the second switch and the third switch to an off state; and change the first switch and the fourth switch to an off state while changing the second switch and the third switch to an on state.

[0017] In other features, the first switch is connected in series with the second switch. The third switch is connected in series with the fourth switch and together are connected in parallel with the series combination of the first switch and the second switch.

[0018] In other features, the first and second switches are connected to a first end of a primary winding of the one of the coupled inductor or the transformer, and the third and fourth switches are connected to a second end of a primary winding of the one of the coupled inductor or the transformer.

[0019] In other features, the substrate processing system further includes an AC-DC converter configured to convert the second AC voltage to a second DC voltage and provide the second DC voltage to the one or more heating elements. The primary winding receives the first AC voltage. A secondary winding of the coupled inductor or the transformer supplies the second AC voltage to the first AC-DC converter.

[0020] In other features, the substrate processing system further includes an AC-DC converter configured to convert the second AC voltage into a second DC voltage and provide the second DC voltage to the one or more heating elements. The AC-DC converter includes a diode connected in series with a secondary winding of the coupled inductor or the transformer, and a capacitor connected in parallel with the one or more heating elements and across the secondary winding and the diode.

[0021] In other features, the substrate processing system further includes a first AC-DC converter configured to convert the second AC voltage to a second DC voltage and provide the second DC voltage to the one or more heating elements. The one or more heating elements include a first heating element. The one of the coupled inductor or the transformer includes a primary winding and a first secondary winding. The first AC-DC converter is connected to the first secondary winding and provides the second DC voltage to the first heating element.

[0022] In other features, the substrate processing system further includes a second AC-DC converter. The one or more heating elements include a second heating element. The one or more coupled inductors or the transformer includes a second secondary winding. The second AC-DC converter converts the first AC voltage to a third AC voltage and provides the third AC voltage to the second heating element.

[0023] In other features, a substrate processing system is provided and includes a substrate support, a power supply circuit, and a controller. The substrate support is configured to support a substrate. The substrate support includes one or more heating elements. The power supply circuit includes: a switch configured to receive a first DC voltage; one of a coupled inductor or a transformer including a primary winding and a secondary winding, wherein the primary winding is connected to the switch and to ground, and wherein the secondary winding is not connected to the ground; a diode connected in series with the secondary winding; and a capacitor connected to the diode and in parallel with the one or more heating elements. The diode and the capacitor convert the AC output of the secondary winding to a second DC voltage. The capacitor provides the second DC voltage to the one or more heating elements. The controller is configured to switch the switch between an on state and an off state at a predetermined frequency when powering the one or more heating elements.

[0024] In other features, the substrate processing system further includes a second capacitor, the first DC voltage is received across the second capacitor, and the switch is connected to an output terminal of the second capacitor.

[0025] In other features, a substrate processing system is provided and includes a substrate support configured to support a substrate. The substrate support includes one or more heating elements. The substrate processing system further includes a power supply circuit and a controller. The power supply circuit includes: an H-bridge configured to receive a first DC voltage, wherein the H-bridge includes a first switch, a second switch, a third switch, and a fourth switch; one of a coupled inductor or a transformer including a primary winding and a secondary winding, wherein the primary winding is connected to the H-bridge and to ground, and wherein the secondary winding is not connected to the ground; a diode connected in series with the secondary winding; and a capacitor connected to the diode and in parallel with the one or more heating elements. The diode and the capacitor convert the AC output of the secondary winding to a second DC voltage. The capacitor provides the second DC voltage to the one or more heating elements. The controller is configured to switch the first switch, the second switch, the third switch, and the fourth switch between an on state and an off state at a predetermined frequency when powering the one or more heating elements.

[0026] In other features, the first switch is connected in series with the second switch. The third switch is connected in series with the fourth switch and together are connected in parallel with the series combination of the first and second switches. The first and second switches are connected to a first end of a primary winding of the coupled inductor or the transformer. The third and fourth switches are connected to a second end of a primary winding of the coupled inductor or the transformer.

[0027] In other features, the substrate processing system further includes a second capacitor configured to receive the first DC voltage. The second capacitor is connected in parallel with the series combination of the first switch and the second switch, and is connected in parallel with the series combination of the third switch and the fourth switch.

[0028] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0030] Figure 1 is a functional block diagram of an example of a substrate processing system including isolation circuitry for one or more heating elements of a substrate support according to an embodiment of the present invention;

[0031] Figure 2 is a functional block diagram of an example of another substrate processing system showing corresponding power supply circuitry according to an embodiment of the present invention;

[0032] Figure 3 is a functional block diagram of an example of a power supply circuit including an isolation circuit and a buck converter according to an embodiment of the present invention;

[0033] Figure 4 is a functional block diagram of an example of another power supply circuit including an isolation circuit and a boost converter according to an embodiment of the present invention;

[0034] Figure 5 is a functional block diagram of an example of another power supply circuit including an H-bridge and an isolation circuit according to an embodiment of the present invention; and

[0035] Figure 6 is a functional block diagram of an example of an isolation circuit and a plurality of alternating current (AC) to direct current (DC) converters according to an embodiment of the present invention.

[0036] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0037] In PECVD and plasma-enhanced atomic layer deposition (PEALD) processing systems, a substrate support is disposed in a processing chamber and may include one or more heating elements embedded within the substrate support. The substrate support may be formed, for example, from aluminum nitride (AlN3). The heating elements are used to set the processing temperature of the substrate support and the temperature of a substrate placed on the substrate support. AC power may be provided to supply power to the heating elements. For example, the AC power may have a frequency of 50-60 Hertz (Hz). Due to standard safety regulations, the AC power is referenced to ground. The walls of the processing chamber may be connected to ground.

[0038] As the temperature of the substrate support increases, the substrate support may become more conductive. This is particularly true for substrate supports formed from AlN3. Consequently, current may leak from a heating element disposed in the substrate support through a portion of the substrate support to the substrate, then to the plasma, and then to ground via the showerhead and / or chamber walls. Consequently, arcing may occur, for example, between the substrate support and the substrate, between the substrate support and the showerhead, or between the substrate support and the chamber walls, which may degrade the substrate.

[0039] Examples disclosed herein include a power supply circuit that includes an isolation circuit for supplying power to a heating element within a substrate support. The isolation circuit isolates the heating element from ground and minimizes and / or prevents arcing between the substrate support and the substrate due to current leakage from the heating element. The power supply circuit also enables high-speed switching, which enables the use of smaller magnetic components, thereby allowing the use of smaller transformers in the isolation circuit. These transformers are much smaller and less expensive than the transformers that would otherwise be required to isolate, for example, a 60 Hz AC signal from ground. Thus, the disclosed examples (including the combination of high-speed switching and isolation circuitry) allow the use of a compact power supply circuit.

[0040] Figure 1 A substrate processing system 100 is shown that includes an ESC 101. The ESC 101 can be configured the same as or similar to any of the substrate supports disclosed herein. Figure 1A capacitively coupled plasma (CCP) system is shown, but the embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources that include substrate supports with heating elements. These embodiments are applicable to plasma vapor deposition (PVD) processes, PECVD processes, PEALD processes, and chemically enhanced plasma vapor deposition (CEPVD) processes. Although ESC 101 is shown as including a monolithic body 102, ESC 101 may have other structures, including multi-plate substrate supports. Body 102 may be formed of different materials and / or different ceramic compositions. Body 102 may include, for example, aluminum nitride (AlN3) and / or other suitable substrate support materials.

[0041] Substrate processing system 100 includes a processing chamber 104. An electrostatic discharge (ESC) 101 is enclosed within processing chamber 104. Processing chamber 104 also encloses other components, such as an upper electrode 105, and contains an RF plasma. During operation, a substrate 107 is placed on ESC 101 and electrostatically clamped thereto. By way of example only, upper electrode 105 may include a showerhead 109, which introduces and distributes gas. Showerhead 109 may include a rod 111 having one end connected to the top surface of processing chamber 104. Showerhead 109 is generally cylindrical and extends radially outward from the other end of rod 111, which is spaced from the top surface of processing chamber 104. The substrate-facing surface of showerhead 109 includes holes through which process gas or purge gas flows. Alternatively, upper electrode 105 may include a conductive plate, and process gas may be introduced via another method.

[0042] The ESC 101 may include temperature control elements (TCEs), also known as heating elements. For example, Figure 1 An ESC 101 is shown that includes a single heating element 110. Although a single heating element 110 is shown, any number of heating elements may be included in the ESC 101 (another example is shown in FIG. Figure 2 middle).

[0043] The RF generation system 120 generates an RF voltage and outputs it to the upper electrode 105 and one or more lower electrodes 116 in the ESC 101. The upper electrode 105 and the ESC 101 can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 can include one or more RF generators 122 (e.g., a capacitively coupled plasma RF power generator, a bias RF power generator, and / or other RF power generators) that generate an RF voltage, which is fed to the upper electrode 105 and / or the ESC 101 via one or more matching and distribution networks 124. For example, a plasma RF generator 123, a bias RF generator 125, a plasma RF matching network 127, and a bias RF matching network 129 are shown. The plasma RF generator 123 can be a high-power RF generator that generates, for example, 6-10 kilowatts (kW) or more. The bias RF matching network supplies power to an RF electrode, such as the RF electrode 116.

[0044] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more precursors and gas mixtures thereof. The gas sources 132 may also supply etching gases, carrier gases, and / or sweep gases. Vaporized precursors may also be used. The gas sources 132 are connected to a manifold 140 via valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136). The output of the manifold 140 is fed to the processing chamber 104. By way of example only, the output of the manifold 140 is fed to the showerhead 109.

[0045] The substrate processing system 100 also includes a heating system 141 that includes a temperature controller 142 that can be connected to the heating element 110. The temperature controller 142 controls a power circuit 144 that supplies power to the heating element 110. The power circuit 144 includes an isolation circuit 145 that isolates the heating element 110 and corresponding power lines from ground, thereby minimizing and / or avoiding arcing caused by current leakage from the heating element 110. The power circuit 144 can be implemented as a power circuit disclosed herein (including Figure 2-5 Any one of those shown in ).

[0046] Although shown separately from the system controller 160, the temperature controller 142 can be implemented as part of the system controller 160. The ESC 101 can include multiple temperature-controlled zones, each of which includes a temperature sensor and a heating element. The temperature controller 142 can monitor the temperature indicated by the temperature sensor and adjust the current, voltage, and / or power supplied to the heating element to adjust the temperature to a target temperature. The power supply circuit 144 can also provide power (including a high voltage) to the electrode 131 to electrostatically clamp the substrate 107 to the ESC 101. The power supply circuit 144 can be controlled by the system controller 160.

[0047] The temperature controller 142 can control the operation of the heating element, thereby controlling the temperature of the heating element and, therefore, the temperature of the substrate (e.g., substrate 107). The temperature controller 142 controls the current supplied to the heating element based on a parameter detected by a temperature sensor 143 within the processing chamber 104. The temperature sensor 143 can include a resistance temperature device, a thermocouple, a digital temperature sensor, and / or other suitable temperature sensors.

[0048] A valve 156 and a pump 158 can be used to evacuate reactants from the processing chamber 104. A system controller 160 can control components of the substrate processing system 100, including controlling the supplied RF power level, the pressure and flow rate of the supplied gas, RF matching, etc. The system controller 160 controls the states of the valve 156 and the pump 158. A robot 164 can be used to transfer substrates to and remove substrates from the ESC 101. For example, the robot 164 can transfer substrates between the ESC 101 and a load lock 166. The robot 164 can be controlled by the system controller 160. The system controller 160 can control the operation of the load lock 166.

[0049] The valves, gas pumps, power sources, RF generators, etc. mentioned herein may be referred to as actuators. The heating elements, gas channels, etc. mentioned herein may be referred to as temperature adjustment elements.

[0050] Figure 2 A substrate processing system 200 is shown that includes a processing chamber 202 having a chamber wall 204. A substrate support 206 and a showerhead 208 are disposed in the processing chamber 202. The substrate support 206 supports a substrate 210 and includes a chucking electrode 131, an RF electrode 116, and a heating element 212. Although (i) the chucking electrode 131 is shown in a single horizontal plane, (ii) the RF electrode 116 is shown in a single horizontal plane, and (iii) the heating element 212 is shown in a single horizontal plane, the electrodes 131, 116, and the heating element 212 may be disposed in other configurations in the substrate support 206.

[0051] The substrate processing system 200 also includes a power source 220 and a power circuit 222, wherein the power circuit 222 includes a filter 224, a DC-AC converter 226, an isolation circuit 228, and an optional AC-DC converter 230. In one embodiment, the AC-DC converter 230 is not included, and the output of the isolation circuit 228 is provided to the heating element 212. The isolation circuit 228 can be directly connected to the heating element 212. The power source 220 supplies a DC voltage to the power circuit 222, which is received at the filter 224. The filter 224 removes noise before the DC voltage is received by the DC-AC converter 226, which converts the DC voltage to a first AC voltage. An example of the power circuit 222, the filter 224, the DC-AC converter 226, the isolation circuit 228, and the optional AC-DC converter 230 is shown in FIG. Figure 3-5 middle.

[0052] Isolation circuit 228 isolates heating element 212 from the output of DC-AC converter 226 and ground. This helps prevent arcing between substrate support 206 and the substrate. An exemplary path 232 is shown along which current can flow from heating element 212 if the disclosed power supply circuit 222 or the like is not implemented. Isolation circuit 228 may include a transformer that converts a first AC voltage to a second AC voltage. AC-DC converter 230 converts the AC voltage to one or more DC voltages, which are provided to heating element 212.

[0053] Figure 3 A power supply circuit 300 is shown that includes a filter 302, a DC-AC converter 304, and a synchronous buck converter 305, which provides power to the heating element R1. The buck converter 305 includes an isolation circuit 306 and an optional AC-DC converter 308. In one embodiment, the AC-DC converter 308 is not included, and the output of the isolation circuit 306 is provided to the heating element R1. The isolation circuit 306 can be directly connected to the heating element R1. The filter 302 includes a capacitor C1 that receives a first DC voltage at a first end and is connected to ground 316 at a second end. The DC-AC converter 304 converts the first DC voltage into a first AC voltage and includes a switch S1 and a primary coil 312 of the isolation circuit 306. The switch S1 can be a metal oxide semiconductor field effect transistor (MOSFET) as shown, a bipolar transistor, and / or other suitable switch. The controller 310 controls the switching of the switch S1 between the on (ON) and off (OFF) states. The controller 310 can be implemented as Figure 1The temperature controller 142 is configured to switch the switch S1 between on and off states at a predetermined switching frequency (e.g., 10-100 kilohertz (kHz)) when providing power to the heating element R1. In one embodiment, the switching frequency is 48 kHz. The switching frequency may be greater than 100 kHz. When the switching frequency is greater than 100 kHz, additional filtering components are included.

[0054] Isolation circuit 306 includes transformer T1. A coupled inductor may be used in place of transformer T1. The transformer may be implemented as a flyback transformer. In the example shown, transformer T1 is implemented as a step-down transformer that converts a first AC voltage into a second AC voltage that is less than the first AC voltage. Transformer T1 includes a primary coil 312 and a secondary coil 314. Primary coil 312 is connected in series with switch S1 and is connected to ground 316. Secondary coil 314 has a first end connected to the anode of diode D1 of AC-DC converter 308 and a second end that may be connected to a common (or reference) ground 318. Reference ground 318 is at a different voltage potential than ground 316.

[0055] AC-DC converter 308 includes a diode D1 and a capacitor C2. The diode rectifies the second AC voltage to provide a second DC voltage across capacitor C2. A first terminal of capacitor C2 is connected to the cathode of diode D1, and a second terminal of the capacitor is connected to reference ground 318. Capacitor C2 is connected in parallel with heating element R1. Heating element R1 receives the second AC voltage.

[0056] Figure 4 A power supply circuit 400 is shown that includes a filter 402, a DC-AC converter 404, and a synchronous boost converter 405, which provides power to the heating element R1. The boost converter 405 includes an isolation circuit 406 and an optional AC-DC converter 408. In one embodiment, the AC-DC converter 408 is not included, and the output of the isolation circuit 406 is provided to the heating element R1. The isolation circuit 406 can be directly connected to the heating element R1. The filter 402 includes a capacitor C1 that receives a first DC voltage at a first end and is connected to ground 416 at a second end. The DC-AC converter 404 converts the first DC voltage to a first AC voltage and includes a switch S1 and a primary coil 412 of the isolation circuit 406. The switch S1 can be a MOSFET, a bipolar transistor, and / or other suitable switch as shown. The controller 410 controls the switching of the switch S1 between the on (ON) and off (OFF) states. The controller 410 can be implemented as Figure 1The temperature controller 142 is configured to switch the switch S1 between on and off states at a predetermined switching frequency (e.g., 10-100 kilohertz (kHz)) when providing power to the heating element R1. In one embodiment, the switching frequency is 48 kHz. The switching frequency may be greater than 100 kHz. When the switching frequency is greater than 100 kHz, additional filtering components are included.

[0057] The isolation circuit 406 includes a transformer T1. A coupled inductor can be used instead of the transformer T1. The transformer can be implemented as a flyback transformer. In the example shown, the transformer T1 is implemented as a step-up transformer that converts a first AC voltage into a second AC voltage that is greater than the first AC voltage. The transformer T1 includes a primary coil 412 and a secondary coil 414. The primary coil 412 is connected in series with the switch S1 and is connected to the ground 416. The secondary coil 414 has a first end connected to the anode of the diode D1 of the optional AC-DC converter 408 and a second end that can be connected to a common (or reference) ground 418. The reference ground 418 is at a different voltage potential than the ground 416.

[0058] AC-DC converter 408 includes a diode D1 and a capacitor C2. The diode rectifies the second AC voltage to provide a second DC voltage across capacitor C2. A first terminal of capacitor C2 is connected to the cathode of diode D1, and a second terminal of the capacitor is connected to reference ground 418. Capacitor C2 is connected in parallel with heating element R1. Heating element R1 receives the second AC voltage.

[0059] Figure 5 A power supply circuit 500 is shown, comprising a filter 502, a DC-AC converter 504, an isolation circuit 506, and an optional AC-DC converter 508, which provides power to a heating element R1. In one embodiment, the AC-DC converter 508 is not included, and the output of the isolation circuit 506 is provided to the heating element R1. The isolation circuit 506 can be directly connected to the heating element R1. The filter 502 comprises a capacitor C1 connected across input terminals and receiving a first DC voltage. The DC-AC converter 504 converts the first DC voltage to a first AC voltage and comprises an H-bridge 505, a controller 510, and a primary coil 512 of the isolation circuit 506.

[0060] The H-bridge includes switches S1-S4, which can be implemented as MOSFET switches, bipolar transistors, and / or other suitable switches as shown in the figure. The controller 510 controls the switching of the switches S1-S4 between the ON and OFF states. The controller 510 can be implemented as Figure 1The temperature controller 142 is configured to control the temperature of the heating element R1. The controller 510 generates control signals that are provided to the gates of switches S1-S4, and switches S1-S4 between on and off states at a predetermined switching frequency (e.g., 10-100 kilohertz (kHz)) when power is supplied to the heating element R1. In one embodiment, the switching frequency is 48 kHz. The switching frequency may be greater than 100 kHz. When the switching frequency is greater than 100 kHz, additional filtering components may be included. When switches S2 and S3 are in the off state, switches S1 and S4 may be in the on state. Similarly, when switches S1 and S4 are in the on state, switches S2 and S3 may be in the off state.

[0061] Switches S1 and S2 are connected in series, and the S1-S2 series combination is connected in parallel with capacitor C1. Switches S3 and S4 are connected in series, and the S3-S4 series combination is connected in parallel with capacitor C1. A coupled inductor can be used instead of transformer T1.

[0062] The DC-AC converter 504 converts the first DC voltage into a first AC voltage, which is provided at the primary coil 512. A first end of the primary coil 512 is connected to the source of the switch S1 and the drain of the switch S2, and a second end is connected to the source of the switch S3 and the drain of the switch S4. The isolation circuit 506 includes a transformer T1 having a primary coil 512 and a secondary coil 514. The transformer T1 converts the first AC voltage into a second AC voltage. The transformer T1 can be a step-down transformer or a step-up transformer.

[0063] AC-DC converter 508 includes a diode D1 and a capacitor C2. Secondary coil 514 has a first end connected to the anode of diode D1 and a second end connected to capacitor C2. Diode D1 rectifies the second AC voltage to provide a second DC voltage across capacitor C2. A first end of capacitor C2 is connected to the cathode of diode D1, and a second end of the capacitor is connected to secondary coil 514. Capacitor C2 is connected in parallel with heating element R1. Heating element R1 receives the second AC voltage.

[0064] In one embodiment, there is provided Figure 2-5 The power supply circuits 222, 300, 400, 500 are used for the respective heating elements of the substrate support. In another embodiment, each of the transformers T1 of the power supply circuits 222, 300, 400, 500 includes multiple secondary windings that provide AC voltage to the corresponding AC-DC converter and the corresponding heating element. In another embodiment, each of the AC-DC converters of the embodiment provides current to one or more heating elements. An example is shown in Figure 6 middle.

[0065] Figure 6An isolation circuit 600 and a plurality of AC-DC converters 602, 604, 606 are shown. The isolation circuit 600 includes a transformer T2, which can replace Figure 2-5 6. Transformer T2 includes a primary coil 608 and secondary coils 610, 612, and 614. Although transformer T2 is shown as having three secondary coils, transformer T2 may have any number of secondary coils. Transformer T2 converts a first AC voltage into one or more other AC voltages. The one or more other AC voltages are provided to AC-DC converters 602, 604, and 606. AC-DC converters 602, 604, and 606 may receive the same AC voltage or different AC voltages. Secondary coils 610, 612, and 614 may have the same number of windings or different numbers of windings.

[0066] AC-DC converters 602, 604, 606 include corresponding diodes D1-D3 and capacitors C2-C4, and convert the received AC voltage into a second DC voltage, which is provided to one or more heating elements (e.g., heating elements R1-R5). The heating elements of each of AC-DC converters 602, 604, 606 can be connected in series and / or in parallel. Although certain series and parallel configurations are shown, other series and / or parallel configurations may be included. Each of AC-DC converters 602, 604, 606 may include any number of heating elements.

[0067] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the permutation of one or more embodiments with each other remains within the scope of the present disclosure.

[0068] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0069] In some implementations, the controller is part of a system, which can be part of the examples described above. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic devices can be referred to as "controllers" and can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools connected to or interfaced with a specific system and other transfer tools and / or load locks.

[0070] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various separate settings (or program files) that define operating parameters for performing specific processes on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more process steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or the die of the wafer.

[0071] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance metrics for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0072] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0073] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport of wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate processing system comprising: a substrate support configured to support a substrate, wherein the substrate support comprises one or more heating elements; and A power supply circuit comprising: Input terminal, a DC-AC converter configured to convert a first DC voltage received from the input terminal into a first AC voltage, wherein the DC-AC converter comprises at least one switch, an isolation circuit comprising one of a coupled inductor or a transformer, wherein the one of the coupled inductor or the transformer is configured to convert the first AC voltage to a second AC voltage and isolate the one or more heating elements from ground, wherein the power circuit is configured to provide an output voltage to the one or more heating elements based on the second AC voltage, the primary coil of the one of the coupled inductor or the transformer is connected directly to the ground and not to a reference ground, the secondary coil of the one of the coupled inductor or the transformer being connected to the reference ground and not to the ground, The reference ground is at a different voltage potential than the ground, and The at least one switch is connected between the input terminal and the primary coil and supplies the first AC voltage to the primary coil. 2 . The substrate processing system of claim 1 , wherein the isolation circuit is configured to supply the second AC voltage to the one or more heating elements.

3. The substrate processing system according to claim 1 , further comprising a controller, wherein: The DC-AC converter includes a switch and the primary coil of the one of the coupled inductor or the transformer; and The controller is configured to switch the switch between on and off states at a predetermined frequency when providing power to the one or more heating elements.

4. The substrate processing system of claim 3, wherein the predetermined frequency is between 10 kHz and 100 kHz. 5 . The substrate processing system of claim 1 , further comprising an AC-DC converter configured to convert the second AC voltage into a second DC voltage and provide the second DC voltage to the one or more heating elements.

6. The substrate processing system according to claim 5, wherein: said one of said coupled inductor or said transformer and said AC-DC converter provide a buck converter; and The transformer is a step-down transformer.

7. The substrate processing system according to claim 5, wherein: said one of said coupled inductor or said transformer and said AC-DC converter provide a boost converter; and The transformer is a step-up transformer.

8. The substrate processing system according to claim 5, wherein: The DC-AC converter includes a metal oxide semiconductor field effect transistor connected in series with the primary winding of the one of the coupled inductor or the transformer; and The AC-DC converter comprises: a diode connected in series with the secondary winding of said one of the coupled inductor or the transformer, and A capacitor is connected in parallel with the one or more heating elements and across the secondary coil and the diode.

9. The substrate processing system according to claim 1, wherein: The one of the coupled inductor or the transformer includes a primary coil and a secondary coil; The primary coil is connected to the ground; and The secondary coil is not connected to the ground.

10. The substrate processing system of claim 1 , further comprising a controller, wherein: The DC-AC converter includes an H-bridge; The H-bridge comprises a first switch, a second switch, a third switch and a fourth switch; and The controller is configured to transition the first switch, the second switch, the third switch, and the fourth switch between on and off states when providing power to the one or more heating elements.

11. The substrate processing system of claim 10, wherein the controller is configured to: While changing the second switch and the third switch to an off state, changing the first switch and the fourth switch to an on state; and While the second switch and the third switch are switched to an on state, the first switch and the fourth switch are switched to an off state.

12. The substrate processing system according to claim 10, wherein: The first switch is connected in series with the second switch; and The third switch is connected in series with the fourth switch and together is connected in parallel with the series combination of the first switch and the second switch.

13. The substrate processing system according to claim 12, wherein: The first switch and the second switch are connected to a first end of the primary coil of the one of the coupled inductor or the transformer; and The third switch and the fourth switch are connected to a second end of the primary coil of the one of the coupled inductor or the transformer.

14. The substrate processing system of claim 13 , further comprising an AC-DC converter configured to convert the second AC voltage into a second DC voltage and provide the second DC voltage to the one or more heating elements, wherein: The primary coil receives the first AC voltage; and The secondary coil of the one of the coupled inductor or the transformer supplies the second AC voltage to the first AC-DC converter.

15. The substrate processing system of claim 13 , further comprising an AC-DC converter configured to convert the second AC voltage into a second DC voltage and provide the second DC voltage to the one or more heating elements, wherein the AC-DC converter comprises: a diode connected in series with the secondary winding of said one of the coupled inductor or the transformer, and A capacitor is connected in parallel with the one or more heating elements and across the secondary coil and the diode.

16. The substrate processing system of claim 1 , further comprising a first AC-DC converter configured to convert the second AC voltage into a second DC voltage and provide the second DC voltage to the one or more heating elements, wherein: The one or more heating elements include a first heating element; The one of the coupled inductor or the transformer includes a primary coil and a first secondary coil; and The first AC-DC converter is connected to the first secondary coil and provides the second DC voltage to the first heating element.

17. The substrate processing system of claim 16, further comprising a second AC-DC converter, wherein: The one or more heating elements include a second heating element; The one of the coupled inductor or the transformer includes a second secondary winding; and The second AC-DC converter converts the first AC voltage into a third AC voltage and provides the third AC voltage to the second heating element.

18. A substrate processing system comprising: a substrate support configured to support a substrate, wherein the substrate support comprises one or more heating elements; A power supply circuit comprising: Input terminal, a DC-AC converter configured to convert a first DC voltage received from the input terminal into a first AC voltage, wherein the DC-AC converter comprises at least one switch, one of a coupled inductor or a transformer comprising a primary coil and a secondary coil, wherein the primary coil is connected to the switch and directly to ground and not to a reference ground, wherein the secondary coil is connected to the reference ground and not to ground, wherein the reference ground is at a different voltage potential than the ground, and wherein the at least one switch is connected between the input terminal and the primary coil and supplies the first AC voltage to the primary coil, a diode connected in series with the secondary coil, and a capacitor connected to the diode and connected in parallel with the one or more heating elements, wherein the diode and the capacitor convert the AC output of the secondary coil to a second DC voltage, and wherein the capacitor provides the second DC voltage to the one or more heating elements; and A controller is configured to switch the switch between an on-state and an off-state at a predetermined frequency when power is supplied to the one or more heating elements.

19. The substrate processing system of claim 18, further comprising a second capacitor, wherein: receiving the first DC voltage across the second capacitor; and The switch is connected to the output terminal of the second capacitor.

Images