A pulse bunch shaping device with ion mass-to-charge ratio discrimination function

By adding beam selection slits on the bias electrode plate and the cutting board in the pulse beam cluster forming device, the problems of increasing beam transmission line length and high engineering cost in the prior art due to the use of magnets are solved, and the mass load is achieved Compared with the largest bundle, the screening and economic benefits are improved.

CN114566304BActive Publication Date: 2025-02-18LANZHOU UNIV
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Patent Information

Application Number
CN202210295743.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-03-24
Publication Date
2025-02-18
Estimated Expiration
2042-03-24

AI Technical Summary

Technical Problem

In the existing pulse ion beam cluster forming devices, deflection analysis magnets need to be installed to identify the ion mass-to-charge ratio, resulting in an increase in the length of the beam transmission line and a higher engineering cost.

Method used

By adding a bias electrode plate after the scanning plate, combined with the adjustment of multiple beam selection slits on the cutting plate and the bias power supply, it is possible to identify the maximum mass-load ratio of the beam while cutting the pulse beam.

Benefits of technology

The use of analytical magnets is reduced, the length of the beam transmission line is shortened, the engineering cost is reduced, and the effective identification of the maximum beam mass ratio is achieved.

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Abstract

The invention discloses a pulse bunch forming device with an ion mass-to-charge ratio discrimination function, which belongs to the technical field of pulse ion bunch forming devices and effectively solves the problems of long transmission lines and high engineering costs of existing pulse bunch forming devices. The device comprises a scanning electrode and a cutting plate, wherein a bias electrode is arranged between the scanning electrode and the cutting plate, the bias electrode and the scanning electrode are both fixedly mounted inside a grounded shell, and high-frequency and high-voltage vacuum sealing penetrations are arranged on the bias electrode and the scanning electrode, and a grounding electrode is fixedly arranged on the grounded shell below the bias electrode and the scanning electrode. The beneficial effects are as follows: by reducing the analysis magnet in the existing pulse bunch forming device, the length of the beam transmission line is shortened, and the engineering cost is reduced; at the same time, by adding a bias electrode plate behind the scanning plate, it is achieved that while a continuous beam is cut into pulse bunches, a bunch with a maximum mass-to-charge ratio is discriminated.
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Description

Technical Field

[0001] The invention belongs to the technical field of pulsed ion bunch forming devices, and in particular relates to a pulsed ion bunch forming device with an ion mass-to-charge ratio discrimination function. Background Art

[0002] Pulsed ion beam clusters have important application value and a wide range of application markets, such as in material surface engineering, thin film deposition, nanopowder preparation, nuclear technology research, etc. The pulsed ion beam cluster forming device is the key unit for generating pulsed beam clusters, and its development technology is the key core technology. The beam cutter composed of a scanning plate and a cutting plate is a commonly used pulsed beam cluster forming device, which modulates the transmission path of the continuous beam by a pulsed or sinusoidal high-frequency voltage loaded on the scanning plate. The beam selection hole at the center of the cutting plate allows a part of the beam to pass through, and the rest of the beam is blocked and lost by the cutting plate, thereby forming a pulsed beam cluster.

[0003] Generally, the beam directly drawn out from the ion source contains multiple types of ions. For example, the deuterium beam drawn out from the ion source contains monatomic ions, diatomic ions, and triatomic ions. In order to obtain the required types of ions, only deuterium monatomic ions are needed in the manufacture of a neutron generator based on deuterium-deuterium nuclear reactions. The traditional method is to install a deflection analysis magnet after the ion source. This commonly used method not only makes the beam transmission line of the ion accelerator longer, but also increases the project cost. Summary of the invention

[0004] The purpose of the present invention is to provide a pulse beam forming device with the function of distinguishing the mass-to-charge ratio of ions in response to the problems existing in the above-mentioned prior art. The device reduces the analytical magnet in the existing pulse beam forming device, shortens the length of the beam transmission line, and reduces the engineering cost. At the same time, by adding a bias electrode plate behind the scanning plate, it is possible to distinguish the beam with the largest mass-to-charge ratio while cutting the continuous beam into pulse beams.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] A pulse bunch shaping device with ion mass-to-charge ratio discrimination function comprises a scanning electrode 2 and a cutting plate 7, wherein a bias electrode 5 is arranged between the scanning electrode 2 and the cutting plate 7, wherein the bias electrode 5 and the scanning electrode 2 are both fixedly mounted inside a grounded shell 4, and wherein a high-frequency and high-voltage vacuum sealing penetration piece 1 is arranged on the bias electrode 5 and the scanning electrode 2, wherein the high-frequency and high-voltage vacuum sealing penetration piece 1 is fixedly arranged on the grounded shell 4, and wherein a grounding electrode 3 is fixedly arranged on the grounded shell 4 below the bias electrode 5 and the scanning electrode 2, and wherein the grounding electrode 3 is parallel to the bias electrode 5 and the scanning electrode 2.

[0007] The high-frequency and high-voltage vacuum sealing penetration piece 1 connected to the scanning electrode 2 is connected to a high-frequency and high-voltage power supply.

[0008] The grounded shell 4 where the scanning electrode 2 is located is connected to the grounded shell 4 where the bias electrode 5 is located through the drift tube 6 .

[0009] The high-frequency and high-voltage vacuum sealing feedthrough 1 connected to the bias electrode 5 is connected to a DC high-voltage power supply.

[0010] The cutting plate 7 is provided with a plurality of beam cutting slits which are parallel to each other from top to bottom.

[0011] A shell is provided between the cutting plate 7 and the bias electrode 5, and an observation window is provided on the side wall of the shell.

[0012] Compared with the prior art, the present invention has the following beneficial effects:

[0013] The present invention reduces the analytical magnet in the existing pulse bunch forming device, shortens the length of the beam transmission line, reduces the engineering cost, and at the same time adds a pair of bias electrode plates at a distance behind the scanning plate, connects a DC high-voltage power supply, opens multiple beam selection slits on the cutting plate, and adjusts the bias power supply voltage so that the slits at the top and bottom have a single pulse with a certain frequency appearing on the beam intensity receiver, thereby obtaining the required monatomic ion bunch, that is, the bunch with the largest mass-to-charge ratio. The device can cut the continuous beam into pulse bunches while identifying the bunch with the largest mass-to-charge ratio, and has good economic benefits and broad market prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic structural diagram of an embodiment of the present invention.

[0015] Figure 2 It is a working principle diagram of an embodiment of the present invention.

[0016] Figure 3 3 is a distribution diagram of the instantaneous electric field intensity in the X direction component of the scanning plate according to an embodiment of the present invention.

[0017] Figure 4 3 is a distribution diagram of the Y-direction component of the instantaneous electric field strength of the scanning plate according to an embodiment of the present invention.

[0018] Serial numbers and names of the accompanying drawings: high-frequency and high-voltage vacuum sealing penetration 1, scanning electrode 2, grounding electrode 3, grounding shell 4, bias electrode 5, drift tube 6, cutting plate 7, observation window 8. DETAILED DESCRIPTION

[0019] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. The exemplary embodiments and descriptions of the present invention are used to explain the present invention, but are not intended to limit the present invention.

[0020] like Figure 2 As shown, a pulse beam forming device with ion mass-to-charge ratio discrimination function described in the present invention includes a scanning electrode 2 and a cutting plate 7, a bias electrode 5 is arranged between the scanning electrode 2 and the cutting plate 7, the bias electrode 5 and the scanning electrode 2 are both fixedly installed inside a grounded shell 4, and a high-frequency and high-voltage vacuum sealing penetration 1 is arranged on the bias electrode 5 and the scanning electrode 2, and the high-frequency and high-voltage vacuum sealing penetration 1 is fixedly installed on the top of the grounded shell 4 through a flange, and a grounding electrode 3 is fixedly arranged on the grounded shell 4 below the bias electrode 5 and the scanning electrode 2, and the grounding electrode 3 is parallel to the bias electrode 5 and the scanning electrode 2.

[0021] The high-frequency and high-voltage vacuum-sealed penetration piece 1 connected to the scanning electrode 2 is connected to a high-frequency and high-voltage power supply, and the high-frequency and high-voltage vacuum-sealed penetration piece 1 connected to the bias electrode 5 is connected to a DC high-voltage power supply.

[0022] The grounded shell 4 where the scanning electrode 2 is located is connected to the grounded shell 4 where the bias electrode 5 is located through the drift tube 6. Both ends of the drift tube 6 are fixedly connected to the grounded shell 4 through the beam selection flange.

[0023] The cutting plate 7 is provided with a plurality of beam cutting slits which are parallel to each other from top to bottom.

[0024] A shell is provided between the cutting plate 7 and the bias electrode 5, and an observation window is provided on the side wall of the shell.

[0025] The working principle of the present invention is as follows: a beam containing multiple types of ions is drawn from an ion source and enters a pulse bunch forming device. Under the action of the high-frequency electric field of the scanning electrode 2, the beam scans forward, and the drift tube 6 and the beam selection flange prevent the beam from scanning outside the beam selection aperture. The part of the beam that passes through the beam selection aperture forms a long pulse bunch. Under the action of the high-voltage electric field of the bias electrode 5, the long pulse beam causes the slits at the top and bottom of the cutting plate 7 to have a single pulse with a certain frequency appearing on the beam intensity receiver, thereby obtaining the desired monatomic ion bunch, that is, the bunch with the largest mass-to-charge ratio. Figure 1 It can be seen that only single-atom bunches are produced and pass through the slits at the bottom and top of the cutting plate 7; the second-bottom and second-top slits can only produce single-atom bunches and diatomic bunches; the middle slit can pass single-atom bunches, diatomic bunches, and triatomic bunches.

[0026] The technical solutions provided by the embodiments of the present invention are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the embodiments of the present invention. The description of the above embodiments is only applicable to help understand the principles of the embodiments of the present invention.

Claims

1. A pulse bunch shaping device with ion mass-to-charge ratio discrimination function, comprising a scanning electrode (2) and a cutting plate (7), characterized in that: A bias electrode (5) is arranged between the scanning electrode (2) and the cutting plate (7); the bias electrode (5) and the scanning electrode (2) are both fixedly mounted inside the grounding shell (4); and a high-frequency high-voltage vacuum sealing penetration piece (1) is arranged on the bias electrode (5) and the scanning electrode (2); the high-frequency high-voltage vacuum sealing penetration piece (1) is fixedly arranged on the grounding shell (4); a grounding electrode (3) is fixedly arranged on the grounding shell (4) below the bias electrode (5) and the scanning electrode (2); and the grounding electrode (3) is parallel to the bias electrode (5) and the scanning electrode (2); A high-frequency and high-voltage vacuum sealing penetration piece (1) provided on the scanning electrode (2) is connected to a high-frequency and high-voltage power supply; The grounded shell (4) where the scanning electrode (2) is located is connected to the grounded shell (4) where the bias electrode (5) is located via a drift tube (6); A high-frequency and high-voltage vacuum sealing feedthrough (1) provided on the bias electrode (5) is connected to a DC high-voltage power supply; The cutting plate (7) is provided with a plurality of mutually parallel beam cutting slits from top to bottom.

2. The pulse bunch shaping device with ion mass-to-charge ratio discrimination function according to claim 1, characterized in that: A shell is provided between the cutting plate (7) and the bias electrode (5), and an observation window is provided on a side wall of the shell.

Citation Information

Patent Citations

  • Method and apparatus of distinguishing a suspected ion beam behind an accelerator analysis magnet

    CN105005070A

  • Pulse beam bunch forming device with ion mass-to-charge ratio discrimination function

    CN217562255U