A surface acoustic wave device bridging process

Abstract

A surface acoustic wave device bridge process comprises the following steps: forming a first metal layer on a chip by vapor deposition; placing a silk screen on the first metal layer, and the silk screen can open a designated part of the first metal layer, and the rest is isolated; spraying an insulating glue liquid, so that a part of the insulating glue liquid passes through the silk screen and falls on the first metal layer, and the other part is located on the silk screen; forming a second metal layer on the chip by vapor deposition, a part of the insulating glue liquid passes through the silk screen and falls on the designated part of the insulating glue liquid, and the other part falls on the insulating glue liquid on the silk screen; removing the silk screen to take out the excess insulating glue liquid, so that the remaining first metal layer and the second metal layer are isolated by the insulating glue liquid. The present invention adopts a prepared epoxy resin glue instead of a polyimide photoresist glue, and uses a spraying and silk screen printing method to reduce the process flow of photolithography corrosion, thereby achieving the purpose of improving production efficiency and reducing material costs.

Description

Technical Field

[0001] The invention relates to the field of chip production, and in particular to a surface acoustic wave device bridging process. Background Art

[0002] At present, the traditional bridging technology uses polyimide photoresist for coating, exposure, and development, and then uses the stripping process to remove the positions where no bridging is required. Multiple processes will increase the pollution of the chip metal layer, and the technical control requirements for exposure are high. In addition, polyimide photoresist is subject to unstable foreign supply and high cost. Summary of the invention

[0003] In order to solve the above problems, the present technical solution provides a surface acoustic wave device bridging process, and this new process can effectively solve the above problems.

[0004] To achieve the above purpose, the technical solution is as follows:

[0005] A surface acoustic wave device bridging process comprises the following steps:

[0006] The chip forms the first metal layer by evaporation;

[0007] A wire mesh is placed on the first metal layer, and the wire mesh can open a designated portion of the first metal layer, and the rest of the first metal layer is isolated;

[0008] Spray the insulating glue so that part of the insulating glue passes through the wire mesh and falls on the first metal layer, and the other part is on the wire mesh;

[0009] The chip is subjected to evaporation to form a second metal layer, with one part passing through the screen and falling on the insulating glue liquid at the designated part, and the other part falling on the insulating glue liquid on the screen;

[0010] The screen is removed to remove excess insulating glue, so that the remaining first metal layer and the second metal layer are isolated by the insulating glue.

[0011] Preferably, the designated portion is a spanning position between the first metal layer and the second metal layer.

[0012] Preferably, the insulating adhesive is epoxy resin adhesive.

[0013] Preferably, the screen is a high-precision printing plate.

[0014] Preferably, the first metal layer and the second metal layer are used for positive and negative electrodes to flow through.

[0015] Preferably, the step of "forming a first metal layer on the chip by evaporation" further includes a step of cleaning the chip.

[0016] The beneficial effects of this application are:

[0017] 1. The present invention uses a prepared epoxy resin glue instead of polyimide photoresist glue, and uses a spraying and silk-screen printing method to reduce the process flow of photolithography corrosion, thereby achieving the purpose of improving production efficiency and reducing material costs;

[0018] 2. The present invention uses a silk screen for isolation and finally takes out, which greatly optimizes the stripping process, simplifies the printing process compared with the prior art, and is conducive to improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for describing the embodiments are briefly introduced below.

[0020] Figure 1 It is a schematic diagram of a flow chart of an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0022] Please refer to Figure 1 As shown, a surface acoustic wave device bridging process includes the following steps:

[0023] S1, cleaning the chip to ensure that the chip is free of any contamination;

[0024] S2, the chip forms the first metal layer by evaporation;

[0025] S3, placing a wire mesh on the first metal layer, and the wire mesh can open a designated part of the first metal layer, and the rest of the metal layer is isolated. Since in the miniaturization design process of the surface acoustic wave device, the electrodes need to cross each other in the vertical direction and cannot be short-circuited, it is necessary to bridge the metal electrodes so that they are not conductive to each other. Therefore, the positions that need to be bridged are connected through the wire mesh to facilitate the subsequent steps;

[0026] S4, spraying insulating glue so that part of the insulating glue passes through the wire mesh and falls on the first metal layer, and the other part is on the wire mesh. Since the wire mesh has isolated the metal layer that does not need to be bridged and opened the metal that needs to be bridged, it can be bridged after spraying the insulating glue;

[0027] S5, forming a second metal layer on the chip by evaporation, a part of which passes through the screen and falls on the isolation glue liquid of the designated part, and the other part falls on the isolation glue liquid of the screen. After the second coating, the two electrodes can be crossed in the vertical direction, and there will be no short circuit between the two.

[0028] S6, taking away the screen to remove the excess insulating glue, so that the remaining first metal layer and the second metal layer are isolated by the insulating glue.

[0029] In this embodiment, the designated portion is a spanning position between the first metal layer and the second metal layer, which can also be understood as a bridging position, where an insulating glue is provided to achieve bridging and prevent the two electrodes from short-circuiting.

[0030] In this embodiment, the insulating glue is epoxy resin glue instead of polyimide photoresist glue, and the process of photolithography corrosion is reduced by spraying and silk screen printing, thereby achieving the purpose of improving production efficiency and reducing material costs.

[0031] In this embodiment, the screen is a high-precision printed board. Due to the miniaturized design of the surface acoustic wave device, a high-precision screen is required to improve the accuracy of the bridge.

[0032] In this embodiment, the first metal layer and the second metal layer are used for positive and negative electrodes to flow through.

[0033] The above description is only a preferred embodiment of the present application and is not intended to limit the scope of implementation of the present application. Other principles and basic structures that are the same or similar to those of the present application are within the protection scope of the present application.

Claims

1. A surface acoustic wave device bridging process, It is characterized in that The steps include: The chip forms the first metal layer by evaporation; A wire mesh is placed on the first metal layer, and the wire mesh can open a designated portion of the first metal layer, and the rest of the first metal layer is isolated; Spray the insulating glue so that part of the insulating glue passes through the wire mesh and falls on the first metal layer, and the other part is on the wire mesh; The chip is subjected to evaporation to form a second metal layer, with one part passing through the screen and falling on the insulating glue liquid at the designated part, and the other part falling on the insulating glue liquid on the screen; Taking away the screen to remove the excess insulating glue, so that the remaining first metal layer and the second metal layer are isolated by the insulating glue; The insulating glue is epoxy resin glue.

2. A surface acoustic wave device bridging process according to claim 1, Features: The designated portion is a crossing position between the first metal layer and the second metal layer.

3. A surface acoustic wave device bridging process according to claim 2, Features: The silk screen is a high-precision printing plate.

4. A surface acoustic wave device bridging process according to claim 3, Features: The first metal layer and the second metal layer are used for positive and negative electrodes to flow through.

5. A surface acoustic wave device bridging process according to claim 1, Features: The step of "forming a first metal layer on the chip by evaporation" also includes a step of cleaning the chip.

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