Manufacturing method of light-emitting diode (LED) chip

Abstract

A method for manufacturing a light-emitting diode (LED) die includes the following steps: forming a plurality of semiconductor structures having a die size on a substrate. The manufacturing method also includes the following steps: providing a receiving plate having an elastomeric polymer layer; mounting the substrate and the receiving plate in physical contact to apply an adhesive force to the plurality of semiconductor structures on the substrate; performing a laser lift-off (LLO) process by guiding a uniform laser beam through the substrate to reach a semiconductor layer located at an interface between the plurality of semiconductor structures and the substrate to peel off these semiconductor structures onto the elastomeric polymer layer; and removing the plurality of semiconductor structures from the receiving plate. During the LLO process, the elastomeric polymer layer acts as a shock absorber to reduce momentum transfer and as an adhesive surface to hold these semiconductor structures in a fixed position on the receiving plate.

Description

[0001] Cross - reference to related applications

[0002] This invention claims priority to U.S. Provisional Patent Application No. 62 / 892,644, filed on August 28, 2019, the content of which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to semiconductor manufacturing, and more particularly to using semiconductor manufacturing techniques to fabricate Light Emitting Diode (LED) dies. Background Art

[0004] In the fabrication of Light Emitting Diode (LED) dies, a substrate such as sapphire can be used to fabricate a GaN epitaxial or epitaxial stack. For example, a Vertical Light Emitting Diode (VLED) die can be formed on a sapphire substrate, along with a continuous sub - substrate formed by using a eutectic metal to bond the sub - substrate, or by using electroplating techniques to deposit the sub - substrate on these epitaxial or epitaxial stacks.

[0005] Figures 1A through 1C illustrate a known method of fabricating a Light Emitting Diode (LED) die 10 (Figure 1C) on a substrate 12. Figure 1A shows the formation of a plurality of semiconductor structures 14, which include a p - GaN layer 16, a Multiple Quantum Well (MQW) layer 18, and an n - GaN layer 20. Figure 1B shows the etching of a plurality of openings 22 to define the LED die 10. Figure 1C shows an insulating layer 26 formed in these openings 22, and a continuous connecting sub - substrate 24 formed on the LED die 10. Figure 1C also shows the process after Laser Lift - Off (LLO) of the substrate 12, and shows several roughened surfaces 28 of the LED die 10.

[0006] One problem that occurs during the LLO process involves the thermal decomposition of the n-GaN layer 20 (FIG. 1C) located at the interface (e.g., GaN / sapphire interface) connected to this substrate 12. Such thermal decomposition generates explosive forces that form several cracks and microcracks in the LED die 10. These cracks and microcracks can also spread in unpredictable directions, resulting in unusable LED dies 10. In addition, damage caused by momentum transfer during LLO leads to device leakage current and reliability issues. In the prior art, a continuous sub-substrate 24 (FIG. 1C) can be bonded, deposited, or grown on these semiconductor structures 14 prior to the LLO process to hold the LED die 10 in place. However, after the sub-substrate 24 has been removed, since the sub-substrate 24 holds the LED die 10 together, the explosive forces may also have damaged these epitaxial or epitaxial layers. An additional step of cutting is also required to separate each individual LED die 10 from adjacent dies before a single LED die 10 can be picked. The cutting process using a dicing saw or laser cutting is expensive due to equipment costs and yield losses.

[0007] The present disclosure is directed to a method of laser lift-off (LLO) for peeling a plurality of semiconductor structures from a substrate without bonding or forming a sub-substrate and without damaging these semiconductor structures. This method also positions these semiconductor structures on a receiving plate ready for picking without performing cutting. Summary of the Invention

[0008] A method of manufacturing a light emitting diode (LED) die includes an initial step of providing a substrate and forming a plurality of semiconductor structures having die sizes on the substrate. The configuration of these semiconductor structures will depend on the type of LED die being manufactured. For example, this method can be used to manufacture vertical light emitting dies (VLEDs) or flip chip light emitting dice (FCLEDs).

[0009] This method also includes the steps of providing a receiving plate having an elastomeric polymer layer with adhesive characteristics; and mounting the substrate to the receiving plate in physical contact with an adhesive force exerted by the elastomeric polymer layer. In an exemplary embodiment, the elastomeric polymer layer includes a curable pressure sensitive curable adhesive.

[0010] This method also includes the step of performing a LLO process by guiding a uniform laser beam through a substrate to a semiconductor layer located at an interface connected to the substrate to peel these semiconductor structures onto an elastomeric polymer layer. During the LLO process, the laser beam is sequentially focused on these semiconductor structures one by one to remove all or only selected semiconductor structures on the substrate. In addition, the laser beam has a profile larger than the footprint of a single semiconductor structure to form several LLO areas larger than the area of these semiconductor structures. Further, during the LLO process, the elastomeric polymer layer on the receiving plate acts as a shock absorber to absorb kinetic energy from these semiconductor structures via momentum energy transfer.

[0011] This method may also include the step of selecting a laser wavelength and power such that during the LLO process, the laser beam can be transmitted through the substrate and absorbed by the semiconductor layer located at the interface connected to the substrate. Further, by selecting the laser wavelength and power, the laser beam carries an energy density far below the absorption threshold of the substrate, thereby allowing it to be transmitted through the substrate. In contrast, the laser energy density is high enough to cause photoinduced decomposition of the semiconductor layer located at the interface connected to the substrate, which allows debonding of the semiconductor layer at the interface. However, the receiving plate avoids any damage to these semiconductor structures by momentum transfer, and the elastomeric polymer material holds these semiconductor structures with chip size in place on the receiving plate. This method can fabricate LED chips with a desired thickness, which is as thin as the thickness of the epitaxial or epitaxial layer and the metal layer, since no sub-substrate is required. The resulting thickness can be less than 50 μm and as thin as 10 μm. This method is particularly good for mini or micro LED chips with a width and length less than 200 μm.

[0012] After the LLO step, this method may also include the step of removing these semiconductor structures with chip size from the receiving plate. This step can be performed by using known techniques, such as a pick-up mechanism for semiconductor chips, or a stamp that has a better adhesion than the elastomeric polymer layer that holds the semiconductor chips in place on the receiving plate. Since these semiconductor structures with chip size are separated from adjacent semiconductor structures before LLO and without a sub-substrate, the step of separating each single semiconductor structure from adjacent structures by using a die saw with laser cutting can be eliminated, resulting in lower costs and higher yields. Description of the Drawings

[0013] Figures 1A to 1C are enlarged schematic cross-sectional views showing a known laser lift-off (LLO) process performed using a connection substrate;

[0014] Figure 2A is a schematic plan view of a substrate and a semiconductor structure formed on the substrate;

[0015] Figure 2B is an enlarged portion of the substrate along the Figure 2A section line 2B;

[0016] Figure 2C is a bottom view equivalent to Figure 2B but seen from the opposite side of the substrate;

[0017] Figure 2D is a schematic plan view showing a laser beam focused on one of these semiconductor structures during the LLO step of this method;

[0018] Figure 2E is an enlarged schematic cross-sectional view showing these semiconductor structures on this substrate;

[0019] Figure 3 is a schematic perspective view showing a receiving plate and a substrate before being set in physical contact;

[0020] Figure 4 is an enlarged schematic cross-sectional view showing a substrate and a receiving plate in physical contact with an adhesive force applied by an elastomeric polymer layer;

[0021] Figure 5 is a schematic flow chart showing an exemplary sequence for mounting a substrate and a receiving plate in a physically contacting state;

[0022] Figure 6 is a schematic cross-sectional view showing a substrate and a receiving plate in a physically contacting state;

[0023] Figure 7 is an enlarged schematic cross-sectional view showing the LLO step of this method;

[0024] Figure 8 is an enlarged schematic cross-sectional view showing exemplary features of a receiving plate for LLO having a spin-coated elastomeric polymer layer;

[0025] Figure 9A is an enlarged schematic cross-sectional view showing the features of the LLO step of this method, where these semiconductor structures can be selectively lifted off the receiving plate;

[0026] Figure 9BA schematic cross-sectional view after the LLO step of this method, where the substrate includes several non-LLO regions, and semiconductor structures with a grain size are installed on the substrate and the LLO regions, and the semiconductor structures with a grain size have been raised above an elastomeric layer of a receiving plate; and

[0027] Figure 10 A schematic cross-sectional view of a completed semiconductor structure in the form of a flip-chip light-emitting diode (FCLED) die. Detailed Description

[0028] See Figures 2A - 2E , a first step in a method of manufacturing a light-emitting diode (LED) die includes: providing a substrate 30( Figure 2A ) and forming a plurality of semiconductor structures 32 with a grain size( Figure 2E ) on the substrate 30. In an exemplary embodiment, the substrate 30 includes a sapphire wafer, and these semiconductor structures 32 have a grain size and include compound semiconductor materials of different layers formed on the substrate 30.

[0029] These semiconductor structures 32 with a grain size can be formed by using known semiconductor manufacturing techniques and are physically separated by etching a pattern of intersecting openings 38( Figure 2B ) to reach the surface of the substrate 30. However, the exact configuration of these semiconductor structures 32 will depend on the type of LED die being manufactured.

[0030] The GaN layer 34( Figure 2E ) can be hetero-epitaxially grown on the substrate 30( Figure 2E ) by using techniques known in the art. Note that after the etching process, there is no GaN material in these openings 38. To promote GaN crystal growth, an initial GaN layer can be deposited at a relatively low temperature (less than 800 °C), resulting in the initial GaN layer containing a high density of various defects due to a large lattice mismatch. For example, crystal defects such as dislocations, nanotubes, and inversion domains increase the surface energy, resulting in higher absorption of laser beams. During a subsequent laser-lift-off (LLO) step, the GaN will rapidly decompose into gallium metal vapor and nitrogen, generating explosive forces acting on these semiconductor structures 32 and the substrate 30. Compared with the substrate 30, these semiconductor structures 32 with a grain size are much smaller in weight and size, such that a huge force will act on each semiconductor structure 32. In this exemplary embodiment, these semiconductor structures 32 are measured in micrometer scale and the substrate 30 is measured in millimeter scale. Also, for example Figure 2EAs shown, a laser beam 40 for a subsequent laser lift-off (LLO) step has a profile shape that is larger than the footprint area of these semiconductor structures 32 having a die size that are to be lifted off (LLO). Additionally, more than one semiconductor structure having a die size can be lifted off at once by varying the size of the laser beam 40, as Figure 9A and Figure 9B shown.

[0031] See Figure 3 , the method of manufacturing a light-emitting diode (LED) die also includes the step of providing a receiving plate 42 coated with an elastomeric polymer layer 44. An exemplary material for the receiving plate includes quartz. Exemplary materials for the elastomeric polymer layer 44 include silicone, siloxane, rubber, or other elastomeric materials. As Figure 3 shown, the receiving plate 42 can have dimensions and a shape that are equivalent to but slightly larger than the dimensions and shape of the substrate 30. For example, if the substrate 30 includes a circular wafer, the receiving plate 42 can include a circular plate that is slightly larger than the circular wafer.

[0032] See Figure 4 , the method of manufacturing an LED die also includes the steps of mounting the substrate 30 and the receiving plate 42 in physical contact with an adhesive force applied by the elastomeric polymer layer 44. As Figure 4 shown, these semiconductor structures 32 can have a configuration of vertical light-emitting diode (VLED) dies such that a plurality of pad electrodes 36 provide a spacing Z1 between these semiconductor structures 32 and the elastomeric polymer layer 44. Additionally, an adhesive force F is applied to these pad electrodes 36 by the elastomeric polymer layer 44. The semiconductor structures 32 having a die size remain physically connected to the substrate 30 but are physically separated from adjacent semiconductor structures.

[0033] Example 1. See Figure 5 and Figure 6, An exemplary installation step uses a circular substrate 30 with a four-inch diameter and a six-inch square receiving plate member 42S. In this example, the elastomeric polymer layer 44 includes a curable silicone pressure-sensitive adhesive configured to apply an adhesive force. Other suitable materials for the elastomeric polymer layer 44 include SORBOTHANE and neoprene. A suitable adhesive is disclosed in Japanese Patent Application No. 2020-016200, filed on February 3, 2020, titled "Addition Curable Silicone Pressure-Sensitive Adhesive Composition and Cured Product Thereof", which is incorporated by reference.

[0034] As Figure 5 shown, the installation step may include a first step of installing the substrate 30 and the receiving plate member 42S in physical contact, a second step of applying a counterweight 48 and curing the elastomeric polymer layer 44 using the counterweight 48, and a third step of removing the counterweight 48. For example, the elastomeric polymer layer 44 may have a Type A hardness of 0.08 MPa or more and less than 70, and an adhesive force with a tensile strength of >0.01 MPa.

[0035] Table 1 confirms certain characteristics of a spin-coated elastomeric polymer layer 44 made of silicone.

[0036] Table 1

[0037]

[0038]

[0039] See Figure 7 and Figure 8 , The manufacturing method of a light-emitting diode (LED) die also includes the step of performing a laser lift-off (LLO) process. During the laser lift-off process, a uniform laser beam 40 is guided through the substrate 30 and reaches above an interface semiconductor layer 50 located at the interface connected to the substrate 30 to peel these semiconductor structures 32 having die sizes onto the receiving plate 42. During the laser lift-off (LLO) process, each semiconductor structure 32 is individually pushed onto the receiving plate 42 by the decomposition of the interface semiconductor layer 50. For example, using an interface semiconductor layer 50 containing GaN, the decomposition will turn gallium (G) and nitrogen (N2) into a gaseous form. At Figure 7In this case, such an explosive force is represented by an explosion arrow 52, which passes through the semiconductor structure 32 and is absorbed by the elastomeric polymer layer 44 on the receiving plate 42. The elastomeric polymer layer 44 acts as a soft cushion or shock absorber to absorb kinetic energy from the semiconductor structure 32 via momentum energy transfer. The semiconductor structure 32 rests on the undamaged elastomeric polymer layer 44 and stays at the desired position on the receiving plate 42.

[0040] Example 2. An exemplary laser lift-off (LLO) process uses a laser beam 40 of 248 nm, such as a KrF excimer laser having a wavelength of λ = 248 nm and a pulse width of 25 ns. The laser output energy can be varied from 10 nJ to 50 mJ. The laser beam is reshaped and homogenized to form a uniform beam profile, preferably less than 10% RMS, by using a special optical system. The LLO process beam passes through a projection system and then is focused onto a wafer / sample having a spot size (e.g., 0.9 * 0.9 mm2). Laser beams of other sizes and shapes can be used. The excimer laser is not limited to KrF (248 nm). For example, the excimer laser can be from an F2 excimer laser (155 nm) to an ArF excimer laser (198 nm). The excimer laser generally uses a combination of an inert gas (argon, krypton, or xenon) and a reactive gas (fluorine or chlorine). The receiving plate 42 is preferably larger than the substrate 30. In addition, the receiving plate 42 is preferably flat, having a total thickness variation (TTV) of less than <5 μm, but better less than <2 μm, to avoid flipping, tilting, rotation, and cracking of these semiconductor structures 32 after the laser lift-off (LLO) process. In addition, the receiving plate 42 may include one or more alignment imprints to align these semiconductor structures 32 on the substrate 30. After the laser lift-off (LLO) process, proper alignment also ensures that the semiconductor structures 32 are properly disposed on the receiving plate 42 (i.e., at the desired coordinates on the receiving plate 42). In addition, the receiving plate 42 may include one or more grooves or flats for pre-alignment.

[0041] Example 3. Refer to Figure 9A and Figure 9B, in this example, the receiving plate 42 includes a spin-coated elastomeric polymer layer 44 that includes a curable silicone pressure-sensitive adhesive component. Also in this example, the substrate 30 includes a four-inch diameter wafer, and the receiving plate 42 includes a six-inch diameter circular plate. Also, the receiving plate 42 has a total thickness variation (TTV) of <5μm. To form the elastomeric polymer layer 44, the elastomer can be dispensed onto the center of the receiving plate 42 using a spin coater to provide a selected thickness T (e.g., 20μm). Regarding a spin coating process, the thickness T of the elastomeric polymer layer 44 will be a function of the spin speed, the viscosity of the spin coating liquid, and other factors. Typically, the thickness T is radially dependent. To provide optimal thickness uniformity, a receiving plate 42 with a larger diameter will be used. The elastomeric polymer layer 44 can also be coated by chemical vapor deposition, a doctor blade, or screen printing (instead of spin coating).

[0042] As Figure 9A shown, a laser lift-off region 54 can be selectively set by appropriately focusing a laser beam 40 to lift a selected semiconductor structure 32 above the receiving plate 42. By using the receiving plate 42, certain semiconductor structures 32 can be selectively removed without performing laser lift-off (LLO) over the entire substrate 30 as in the prior art sub-substrate 24 (FIG. 1C). After the LLO step, this method can also include the step of cleaning and / or etching the surface of the semiconductor structures 32 on the receiving plate 42. The semiconductor structures 32 located on the receiving plate 42 can be etched to construct a rough surface to improve its performance, such as light extraction, output, and processing.

[0043] Using semiconductor structures 32 having a die size placed on the surface of the elastomeric polymer layer 44 of the receiving plate 42, this method can also include the step of removing these semiconductor structures 32 from the receiving plate 42. Such a step can be performed by using known techniques (e.g., a pick-and-place mechanism for semiconductor dies).

[0044] See Figure 10 , a completed semiconductor structure that has been separated from the receiving plate 42 includes a flip-chip light-emitting diode (FCLED) die 32FCLED. The flip-chip light-emitting diode (LED) die 32FCLED includes an epitaxial stack 57 that includes a P-type confinement layer (P-layer) 64; an N-type confinement layer (N-layer) 60; an active layer (multiple quantum well (MQW) layer) 62 configured to emit light and located between these confinement layers; a plurality of P-metal layers 66 in contact with the P-type confinement layer (P-layer) 64, a mirror layer 68, and an isolation layer 72; and an N-electrode 70 in contact with the N-type confinement layer (N-layer) 60.

[0045] Although many exemplary modes of implementation and embodiments have been discussed above, those skilled in the art will recognize certain modifications, substitutions, additions, and sub-combinations thereof. Accordingly, this disclosure is intended to interpret the appended claims and claims hereafter introduced as covering all such modifications, substitutions, additions, and sub-combinations within their true spirit and scope.

Claims

1. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Providing a plurality of semiconductor structures having a grain size on a substrate; Providing a receiving plate having an elastomeric polymer layer; Mounting the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer; Performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to reach a semiconductor layer at an interface between the plurality of semiconductor structures and the substrate, so as to lift off the plurality of semiconductor structures onto the elastomeric polymer layer; wherein, during the laser lift-off (LLO) process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

2. The method according to claim 1, characterized in that, Further comprising removing the plurality of semiconductor structures from the receiving plate.

3. The method according to claim 1, characterized in that, Further comprising: selecting a laser wavelength and power such that the laser beam can be transmitted through the substrate and absorbed by the semiconductor layer at the interface connected to the substrate.

4. The method according to claim 1, characterized in that, During the laser lift-off process, the laser beam is sequentially focused on at least one of the plurality of semiconductor structures at a time to remove all or only selected semiconductor structures on the substrate.

5. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Providing a plurality of semiconductor structures having a grain size on a sapphire substrate; Providing a receiving plate having an elastomeric polymer layer, the receiving plate comprising a plate larger than a wafer; Mounting the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer; and Performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to reach a semiconductor layer at an interface connected to the substrate to lift off the plurality of semiconductor structures onto the elastomeric polymer layer; wherein, during the laser lift-off (LLO) process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

6. The method according to claim 5, characterized in that, Further comprising removing the plurality of semiconductor structures from the receiving plate.

7. The method according to claim 5, characterized in that, Using an excimer laser to perform the laser lift-off process.

8. The method according to claim 5, characterized in that, The plurality of semiconductor structures comprise vertical light-emitting diode (VLED) grains or flip-chip light-emitting diode (FCLED) grains.

9. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Providing a plurality of semiconductor structures having a grain size on a substrate, each semiconductor structure comprising an epitaxial stack including a GaN layer; Providing a receiving plate having an elastomeric polymer layer, the elastomeric polymer layer comprising a cured pressure-sensitive silica gel; Mounting the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer, the substrate and the receiving plate, and applying a counterweight; Perform a laser lift-off LLO process by guiding a uniform laser beam through the substrate to a semiconductor layer at a sapphire / GaN interface of the plurality of semiconductor structures located on the substrate to lift off the plurality of semiconductor structures onto the elastomeric polymer layer, and after the laser lift-off process, cause the elastomeric polymer layer to hold the plurality of semiconductor structures in a certain position on the receiving plate; wherein, during the laser lift-off LLO process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

10. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Provide a substrate comprising sapphire; Form a plurality of semiconductor structures having a grain size on the substrate, each semiconductor structure comprising an epitaxial stack comprising a GaN layer; Provide a receiving plate having an elastomeric polymer layer, the elastomeric polymer layer comprising a cured spin-coated polymer; Mount the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer; and Perform a laser lift-off LLO process by guiding a uniform laser beam through the substrate to a semiconductor layer at a sapphire / GaN interface located on the substrate to lift off the plurality of semiconductor structures onto the elastomeric polymer layer, and after the laser lift-off process, cause the elastomeric polymer layer to hold the plurality of semiconductor structures in a certain position on the receiving plate; wherein, during the laser lift-off LLO process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

11. The method according to claim 10, characterized in that, Further comprising: Select a laser wavelength and power such that during the laser lift-off process, the laser beam can be transmitted through the substrate and absorbed by the semiconductor layer at the interface connected to the substrate.

12. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Provide a substrate comprising sapphire; Form a plurality of semiconductor structures having a grain size on the substrate, each semiconductor structure comprising an epitaxial stack comprising a GaN layer, and the plurality of semiconductor structures comprise flip-chip light-emitting diode FCLED grains, and each FCLED grain comprises a P-type confinement layer, an N-type confinement layer, an active layer configured to emit light and located between the plurality of confinement layers, a plurality of P-metal layers in contact with the P-type confinement layer, and an N-electrode in contact with the N-type confinement layer; Provide a receiving plate having an elastomeric polymer layer, the elastomeric polymer layer comprising a cured pressure-sensitive silicone; Mount the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer; and Perform a laser lift-off LLO process by guiding a uniform laser beam through the substrate to a semiconductor layer at a sapphire / GaN interface located on the substrate to lift the plurality of semiconductor structures onto the elastomeric polymer layer, and after the laser lift-off process, cause the elastomeric polymer layer to hold the plurality of semiconductor structures in a certain position on the receiving plate; wherein, during the laser lift-off LLO process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

13. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Provide a substrate comprising sapphire; Form a plurality of semiconductor structures having a grain size on the substrate, each semiconductor structure comprising an epitaxial stack comprising a GaN layer; Provide a receiving plate having an elastomeric polymer layer comprising a cured pressure-sensitive silicone; Mount the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer and cure the elastomeric polymer layer; and Perform a laser lift-off LLO process by guiding a uniform laser beam through the substrate to a semiconductor layer at a sapphire / GaN interface located on the substrate to lift the plurality of semiconductor structures onto the elastomeric polymer layer, and after the laser lift-off process, cause the elastomeric polymer layer to hold the plurality of semiconductor structures in a certain position on the receiving plate; wherein, during the laser lift-off LLO process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

14. A manufacturing method of a light-emitting diode die, characterized in that, Comprising: Provide a plurality of semiconductor structures having a grain size on a substrate, each semiconductor structure comprising an epitaxial stack comprising a GaN layer; Provide a receiving plate having an elastomeric polymer layer comprising a cured pressure-sensitive silicone; Mount the plurality of semiconductor structures having a grain size in physical contact with the elastomeric polymer layer; and Perform a laser lift-off LLO process by guiding a laser beam through the substrate to a semiconductor layer at a sapphire / GaN interface located on the substrate to lift the plurality of semiconductor structures onto the elastomeric polymer layer, and after the laser lift-off process, cause the elastomeric polymer layer to hold the plurality of semiconductor structures in a certain position on the receiving plate; wherein, during the laser lift-off LLO process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

15. The method according to claim 14, characterized in that, The substrate comprises a wafer, and the receiving plate comprises a circular plate larger than the wafer.

16. A manufacturing method of a light-emitting diode (LED) die, characterized in that, Comprising: Provide a plurality of semiconductor structures having a grain size on a substrate, the substrate comprising a plurality of epitaxial stacks of various compound semiconductor materials; Provide a receiving plate having a cured spin-coated silicone elastomeric polymer layer on it; Mount the plurality of semiconductor structures having a grain size on the substrate and the receiving plate member to be in physical contact with an adhesive force applied by the elastomeric polymer layer; Perform a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to reach the semiconductor layer at an interface connected to the substrate to lift off the plurality of semiconductor structures onto the elastomeric polymer layer, and the elastomeric polymer layer serves as a shock absorber and an adhesive surface for supporting the plurality of semiconductor structures; and Select a laser wavelength and power such that during the laser lift-off process, the laser beam can be transmitted through the substrate and absorbed by the semiconductor layer at the interface connected to the substrate; wherein, during the laser lift-off (LLO) process, the elastomeric polymer layer acts as a soft cushion or a shock absorber to absorb kinetic energy from the plurality of semiconductor structures via momentum energy transfer.

17. The method according to claim 16, characterized in that, Further comprising: removing the plurality of semiconductor structures from the receiving plate member.

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