Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to an embodiment, the semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, and a first insulating member. The defect density in a fourth semiconductor region of the semiconductor component is higher than a first defect density at a first position in a first semiconductor region of the semiconductor component.

Description

[0001] This application is based on Japanese Patent Application No. 2020-205605 (filing date: December 11, 2020), and claims priority through this application. This application incorporates the entire content of that application by reference. Technical Field

[0002] Embodiments of the present invention relate to semiconductor devices. Background Art

[0003] For example, improvement in characteristics is desired in semiconductor devices such as transistors. Summary of the Invention

[0004] An object of the present invention is to provide a semiconductor device capable of improving characteristics.

[0005] Means for Solving the Technical Problem

[0006] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. The direction from the first electrode toward the second electrode is along a first direction. The third electrode includes a third electrode end portion and another third electrode end portion. The third electrode end portion is between the first electrode and the another third electrode end portion in the first direction. The first conductive member includes a first conductive member end portion and another first conductive member end portion. The first conductive member end portion is between the first electrode and the another first conductive member end portion in the first direction. The position of the first conductive member end portion in the first direction is between the position of the first electrode in the first direction and the position of the third electrode end portion in the first direction. The first conductive member is electrically connected to one of the second electrode and the third electrode, or the first conductive member can be electrically connected to one of the second electrode and the third electrode. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type. The first semiconductor region includes a first partial region and a second partial region. The first partial region is between the first electrode and the second electrode in the first direction. The second semiconductor region is between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. A second direction from a part of the third electrode toward the second semiconductor region is a direction intersecting the first direction. A direction from another part of the third electrode toward a part of the first partial region is a direction along the second direction. A direction from the second partial region toward the first conductive member is a direction along the first direction. A direction from the first conductive member toward the first partial region is along the second direction. The fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction. The fourth semiconductor region is electrically connected to the first electrode. The carrier concentration of the first conductivity type in the fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the first semiconductor region. The first partial region includes a first position. A direction from the first conductive member end portion toward the first position is a direction along the second direction. The defect density in the fourth semiconductor region is higher than the first defect density at the first position. At least a part of the first insulating member is between the semiconductor member and the third electrode, and between the semiconductor member and the first conductive member.

[0007] According to the semiconductor device configured as described above, a semiconductor device capable of improving characteristics can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0009] Figure 2 (a) to Figure 2 (c) of are graphs illustrating the characteristics of the semiconductor device according to the first embodiment.

[0010] Figure 3 is a graph illustrating the characteristics of a semiconductor device.

[0011] Figure 4 is a graph illustrating the characteristics of a semiconductor device.

[0012] Figure 5 (a) to Figure 5 (c) of are graphs illustrating the characteristics of the semiconductor device according to the first embodiment.

[0013] Figure 6 is a graph illustrating the characteristics of the semiconductor device according to the first embodiment.

[0014] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0015] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0016] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0017] Reference Numeral Explanation

[0018] 10…Semiconductor component; 11 to 16…First to sixth semiconductor regions; 11a, 11b…First and second partial regions; 41…First insulating component; 41a, 41b…First and second insulating regions; 51 to 53…First to third electrodes; 52C…Connecting component; 52LL…Connecting component; 52T…Terminal; 53C…Connecting component; 53T…Terminal; 53a…End portion of the third electrode; 53b…Other end portion of the third electrode; 61…First conductive component; 61C…Connecting component; 61T…Terminal; 61a…End portion of the first conductive component; 61b…Other end portion of the first conductive component; 110 to 113…Semiconductor devices; C1, C15, C2…Impurity concentration; DD1 to DD3…First to third defect densities; DDb1, DDb2, DDk, DDx…Defect densities; HC1 to HC3…Concentrations; HCb1, HCb2, HCk, HCx…Concentrations; Qrr…Reverse recovery charge; RR1…Ratio; d1, d2…Distances; p1 to p3…First to third positions; pCk…Peak position of the first element; pDk…Defect peak position; pZ…Position; pb1, pb2…First and second boundary positions Detailed implementation mode

[0019] Hereinafter, while referring to the appended Figure 1 each embodiment of the present invention will be described.

[0020] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as in reality. Even when representing the same part, there are cases where the mutual dimensions or ratios are represented differently according to the drawing.

[0021] In the specification and each figure of the present application, the same reference numerals are given to the same elements as those described in the figures that have already appeared, and the detailed description is appropriately omitted.

[0022] (First Embodiment)

[0023] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0024] As Figure 1 shown, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive component 61, a semiconductor component 10, and a first insulating component 41.

[0025] The direction from the first electrode 51 to the second electrode 52 is along the first direction. Let the first direction be the Z-axis direction. Let the direction perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to the Z-axis direction and the X-axis direction be the Y-axis direction.

[0026] The position of the third electrode 53 in the first direction (Z-axis direction) is between the position of the first electrode 51 in the first direction and the position of the second electrode 52 in the first direction. The third electrode 53 includes a third electrode end portion 53a and a third electrode other end portion 53b. The third electrode end portion 53a and the third electrode other end portion 53b are end portions in the Z-axis direction. The third electrode end portion 53a is between the first electrode 51 and the third electrode other end portion 53b in the first direction (Z-axis direction). The third electrode end portion 53a is the end portion of the third electrode 53 on the first electrode 51 side. The third electrode end portion 53a is, for example, the lower end portion.

[0027] The first conductive member 61 includes a first conductive member end portion 61a and a first conductive member other end portion 61b. The first conductive member end portion 61a and the first conductive member other end portion 61b are end portions in the Z-axis direction. The first conductive member end portion 61a is between the first electrode 51 and the first conductive member other end portion 61b in the first direction. The first conductive member end portion 61a is, for example, the lower end portion. The position of the first conductive member end portion 61a in the first direction is between the position of the first electrode 51 in the first direction and the position of the third electrode end portion 53a in the first direction. The distance along the Z-axis direction between the first conductive member end portion 61a and the first electrode 51 is shorter than the distance along the Z-axis direction between the third electrode end portion 53a and the first electrode 51.

[0028] The first conductive member 61 is electrically connected to one of the second electrode 52 and the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to one of the second electrode 52 and the third electrode 53. In the semiconductor device 110, the first conductive member 61 is electrically connected to the second electrode 52.

[0029] For example, as Figure 1 shown, for example, the first conductive member 61 is electrically connected to the second electrode 52 via the connection member 61C, the connection member 52LL, and the connection member 52C. These connection members can also be provided at positions different from the Figure 1 cross-section illustrated. For example, the terminal 52T can also be connected to the second electrode 52 via the connection member 52C. The terminal 61T can also be electrically connected to the first conductive member 61 via the connection member 61C. The terminal 61T and the terminal 52T can also be electrically connected by the connection member 52LL. The connection member 52LL can also be provided independently of the semiconductor device 110.

[0030] The semiconductor component 10 is, for example, between the first electrode 51 and the second electrode 52. The semiconductor component 10 contains, for example, a semiconductor such as silicon.

[0031] The semiconductor component 10 includes a first semiconductor region 11 of a first conductivity type, a second semiconductor region 12 of a second conductivity type, a third semiconductor region 13 of the first conductivity type, and a fourth semiconductor region 14 of the first conductivity type. As Figure 1 shown, the semiconductor component 10 may also include a fifth semiconductor region 15. As Figure 1 shown, the semiconductor component 10 may also include a sixth semiconductor region 16.

[0032] For example, the first conductivity type is n-type and the second conductivity type is p-type. In an embodiment, the first conductivity type may also be p-type and the second conductivity type may be n-type. In the following examples, the first conductivity type is n-type and the second conductivity type is p-type.

[0033] The first semiconductor region 11 includes a first partial region 11a and a second partial region 11b. For example, the first partial region 11a is between the first electrode 51 and the second electrode 52 in a first direction (Z-axis direction).

[0034] The second semiconductor region 12 is between the first partial region 11a and the third semiconductor region 13 in the first direction (Z-axis direction). For example, there are the first partial region 11a, the second semiconductor region 12, and the third semiconductor region 13 between the first electrode 51 and the second electrode 52. The third semiconductor region 13 is electrically connected to the second electrode 52.

[0035] A second direction from a part of the third electrode 53 to the second semiconductor region 12 intersects the first direction. The second direction is, for example, the X-axis direction.

[0036] A direction from another part of the third electrode 53 to a part of the first partial region 11a is along the second direction (for example, the X-axis direction).

[0037] A direction from the second partial region 11b of the first semiconductor region 11 to the first conductive member 61 is along the first direction (Z-axis direction). A direction from the first conductive member 61 to the first partial region 11a is along the second direction (for example, the X-axis direction).

[0038] The fourth semiconductor region 14 is provided between the first electrode 51 and the first semiconductor region 11 in the first direction (Z-axis direction). The fourth semiconductor region 14 is electrically connected to the first electrode 51. When the fifth semiconductor region 15 is provided, the fifth semiconductor region 15 is between the first electrode 51 and the fourth semiconductor region 14. The fifth semiconductor region 15 is, for example, of the first conductivity type. The fifth semiconductor region 15 may also be a semiconductor substrate, for example.

[0039] The carrier concentration of the first conductivity type in the fourth semiconductor region 14 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The first semiconductor region 11 is, for example, an n region or an n － region. The fourth semiconductor region 14 is, for example, an n + region.

[0040] The carrier concentration of the first conductivity type in the fifth semiconductor region 15 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The carrier concentration of the first conductivity type in the fifth semiconductor region 15 is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region 14. The fifth semiconductor region 15 is, for example, an n + region or an n ++ region. By providing the fourth semiconductor region 14 and the fifth semiconductor region 15, the resistance of the electrical connection of the first electrode 51 can be lowered. For example, a lower on-resistance can be obtained.

[0041] The carrier concentration of the first conductivity type in the third semiconductor region 13 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The third semiconductor region 13 is, for example, an n + region.

[0042] In the case where the sixth semiconductor region 16 is provided, the sixth semiconductor region 16 is provided, for example, between the second semiconductor region 12 and the second electrode 52. The sixth semiconductor region 16 is of the second conductivity type (for example, p-type). The carrier concentration of the second conductivity type in the sixth semiconductor region 16 is higher than the carrier concentration of the second conductivity type in the second semiconductor region 12. For example, the second semiconductor region 12 is a p region. The sixth semiconductor region 16 is a p + region. By providing the sixth semiconductor region 16, the resistance of the electrical connection of the second electrode 52 can be lowered. For example, a lower on-resistance can be obtained.

[0043] At least a part of the first insulating member 41 is between the semiconductor member 10 and the third electrode 53, and between the semiconductor member 10 and the first conductive member 61. For example, the first insulating member 41 includes a first insulating region 41a and a second insulating region 41b. The first insulating region 41a is, for example, between the third electrode 53 and the second semiconductor region 12 in the second direction (for example, the X-axis direction). The second insulating region 41b is between the first conductive member 61 and the semiconductor member 10.

[0044] For example, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential based on the potential of the second electrode 52. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode, for example. The first insulating region 41a functions as a gate insulating film, for example. The first conductive member 61 functions as a field plate, for example. The semiconductor device 110 is a transistor, for example.

[0045] In the embodiment, the fourth semiconductor region 14 contains defects. The defects are defects in the crystal of the semiconductor component 10 (e.g., silicon). The defects can be formed, for example, by introducing an element containing at least one selected from the group consisting of helium and hydrogen into the semiconductor component 10. The introduction of the element can be performed from the upper surface or the lower surface of the semiconductor component 10.

[0046] For example, the defect density in the fourth semiconductor region 14 is higher than the defect density in the first partial region 11a. By making the defect density in the fourth semiconductor region 14 relatively high, for example, losses can be reduced. For example, injection of carriers toward the region on the first electrode 51 side of the first semiconductor region 11 during forward operation can be suppressed. For example, the reverse recovery charge Qrr can be reduced. As a result, the reverse recovery loss can be decreased. By making the defect density in the first partial region 11a relatively low, for example, the turn-off leakage current can be suppressed. According to the embodiment, for example, losses can be reduced while suppressing the turn-off leakage. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0047] As Figure 1 shown, the first partial region 11a includes a first position p1. The direction from the first conductive member end 61a to the first position p1 is along the second direction. For example, the defect density at the first position p1 is lower than the defect density in the fourth semiconductor region 14.

[0048] Hereinafter, examples of the defect density will be described.

[0049] Figure 2 of (a) to Figure 2 of (c) illustrate graphs showing the characteristics of the semiconductor device according to the first embodiment.

[0050] In these figures, the horizontal axis represents the position pZ in the Z-axis direction. Figure 2 The vertical axis of (a) represents the impurity concentration C1 of the first conductivity type of the semiconductor component 10. Figure 2The vertical axis of (b) is the impurity concentration C2 of the second conductivity type of the semiconductor component 10. For example, the magnitude of the difference between the impurity concentration C1 and the impurity concentration C2 corresponds to the level of the carrier concentration. Hereinafter, for simplicity of explanation, in the first semiconductor region 11, the fourth semiconductor region 14, and the fifth semiconductor region 15, the case where the carrier concentration of the first conductivity type substantially corresponds to the impurity concentration C1 of the first conductivity type will be described. Figure 2 The vertical axis of (c) is the defect density DDx. Figure 2 of (a) to Figure 2 The vertical axis of (c) is in logarithmic display.

[0051] As Figure 2 of (a) and Figure 2 As shown in (b), in the third semiconductor region 13, the carrier concentration of the first conductivity type is high. In the second semiconductor region 12, the carrier concentration of the second conductivity type is high. In the first semiconductor region 11, the carrier concentration of the first conductivity type is low. In the fourth semiconductor region 14, the carrier concentration of the first conductivity type increases from the carrier concentration of the first conductivity type in the first semiconductor region 11. In the fifth semiconductor region 15, the carrier concentration of the first conductivity type is high. For example, the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15 is substantially constant. The carrier concentration of the first conductivity type in the fourth semiconductor region 14 is lower than the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15, for example.

[0052] Let the position in the first direction (Z-axis direction) of the boundary (the first boundary) between the fourth semiconductor region 14 and the fifth semiconductor region 15 be the first boundary position pb1. For convenience, it is assumed that the carrier concentration (impurity concentration) of the first conductivity type at the first boundary position pb1 is 51% of the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15.

[0053] Let the position in the first direction (Z-axis direction) of the boundary (the second boundary) between the fourth semiconductor region 14 and the first semiconductor region 11 be the second boundary position pb2. It is assumed that at the second boundary position pb2, the carrier concentration (impurity concentration C1) of the first conductivity type is 101% of the carrier concentration (impurity concentration C1) of the first conductivity type in the first semiconductor region 11. As Figure 1 shown, the carrier concentration (impurity concentration C1) of the first conductivity type in the fourth semiconductor region 14 increases from the second boundary position pb2 toward the first boundary position pb1.

[0054] As Figure 2As shown in (a) thereof, the fourth semiconductor region 14 may also include a second position p2. The carrier concentration (impurity concentration C1) of the first conductivity type at the second position p2 is 10% of the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15.

[0055] As Figure 2 shown in (c) thereof, the defect density DDx is high in the fourth semiconductor region 14. The defect density DDx may also be high in at least a part of the fifth semiconductor region 15. The defect density DDx decreases in the first semiconductor region 11 (the first partial region 11a) in the direction from the fourth semiconductor region 14 toward the second semiconductor region 12. For example, the defect density DDx of the semiconductor component 10 is the highest in the fourth semiconductor region 14 or the fifth semiconductor region 15.

[0056] Let the defect density DDx at the above-described first position p1 be the first defect density DD1. The defect density DDx in the fourth semiconductor region 14 is higher than the first defect density DD1. Through such a distribution diagram of the defect density DDx, for example, the reverse recovery charge Qrr can be reduced. For example, the turn-off leakage current can be suppressed. For example, the loss can be reduced while suppressing the turn-off leakage. For example, it can be considered that such a phenomenon is brought about by the shortening of the charge lifetime due to defects.

[0057] For example, as Figure 2 shown in (c) thereof, let the position in the first direction (Z-axis direction) where the semiconductor component 10 has the highest defect density DDk be the defect peak position pDk. The defect peak position pDk is in the fourth semiconductor region 14 or the fifth semiconductor region 15. As will be described later, it is more preferable that the defect peak position pDk is in the fourth semiconductor region 14.

[0058] In one example, the defect density DDb1 at the first boundary position pb1 is higher than the first defect density DD1. The defect density DDb2 at the second boundary position pb2 is higher than the first defect density DD1. The second defect density DD2 at the second position p2 is higher than the first defect density DD1.

[0059] In the embodiment, by making the first defect density DD1 at the first position p1 low, for example, the turn-off leakage current Idss can be made small.

[0060] There is a first reference example in which the first conductive member 61 (e.g., field plate) is not provided. In the first reference example, hard recovery occurs, thereby generating a large surge voltage. In the first reference example, if the defect density DDx in the region closer to the first electrode 51 (e.g., the fourth semiconductor region 14) is increased, the surge voltage becomes higher. Therefore, in the first reference example, a configuration is adopted in which the defect density DDx in the region closer to the first electrode 51 (e.g., the fourth semiconductor region 14) is lower than the defect density (e.g., the first defect density DD1) at the first position p1 or the like.

[0061] In contrast, in the embodiment, the first conductive member 61 is provided. In such a configuration, for example, due to the built-in buffer effect, hard recovery is less likely to occur, and the surge voltage is suppressed. In such a special structure, even if the defect density DDx is increased in the region closer to the first electrode 51 (e.g., the fourth semiconductor region 14 or the fifth semiconductor region 15), the increase in the surge voltage is suppressed. In the embodiment, regarding the high or low defect density DDx, by setting a configuration opposite to that of the first reference example, the reverse recovery charge Qrr can be reduced.

[0062] Hereinafter, an example of the simulation result of the relationship between the defect density and the characteristics will be described.

[0063] Figure 3 It is a graph showing the characteristics of the semiconductor device.

[0064] Figure 3 The horizontal axis is the ratio RR1 of the defect density DDb1 at the first boundary position pb1 to the first defect density DD1 at the first position p1. The horizontal axis is displayed logarithmically. The vertical axis is the reverse recovery charge Qrr. In Figure 3 It shows examples in the case where the first defect density DD1 at the first position p1 is 2.7×10 13 / cm 3 Examples in the case of 2.7×10 14 / cm 3 Examples in the case of, and 9.0×10 14 / cm 3 Examples in the case of.

[0065] As Figure 3 shown, if the ratio RR1 increases, the reverse recovery charge Qrr decreases. It is considered that this is because if the ratio RR1 increases, the lifetime of the carriers injected into the region on the first electrode 51 side of the first semiconductor region 11 becomes shorter.

[0066] If comparing the examples in the case where the first defect density DD1 is 2.7×10 13 / cm 3 Examples in the case of, 2.7×1014 / cm 3 Examples in the case of, and 9.0×10 14 / cm 3 In the case of examples, when the first defect density DD1 is low, the effect of reducing the reverse recovery charge Qrr brought about by the higher ratio RR1 is significantly exerted. Therefore, the first defect density DD1 is preferably low.

[0067] On the other hand, if the first defect density DD1 is high, the turn-off leakage current Idss tends to increase. Therefore, in the embodiment, the first defect density DD1 is preferably 9.0×10 14 / cm 3 or less. Thus, a smaller turn-off leakage can be obtained. And a greater effect on reducing the reverse recovery charge Qrr can be obtained.

[0068] As described above, in the embodiment, by making the defect density DDx in the region closer to the first electrode 51 (for example, the fourth semiconductor region 14 or the fifth semiconductor region 15) higher than the first defect density DD1 at the first position p1, a smaller reverse recovery charge Qrr can be obtained.

[0069] As already described, at the defect peak position pDk, the highest defect density DDk in the semiconductor component 10 can be obtained (refer to Figure 2 (c)). Hereinafter, examples of the defect peak position pDk will be described.

[0070] Figure 4 It is a graph showing the characteristics of the semiconductor device.

[0071] Figure 4 It shows an example of the simulation result of the characteristics when the defect peak position pDk is changed along the first direction (Z-axis direction). Figure 4 The horizontal axis is the defect peak position pDk in the position pZ in the Z-axis direction. The vertical axis is the reverse recovery charge Qrr. In Figure 4 it shows the first semiconductor region 11 (the first partial region 11a), the fourth semiconductor region 14, and the fifth semiconductor region 15. In Figure 4 it shows the case where the highest defect density DDk in the semiconductor component 10 is 5.8×10 15 / cm 3 the case of, 2.9×10 15 / cm 3 the case of, and 1.45×10 15 / cm 3 the case of.

[0072] As Figure 4As shown, regardless of the defect density DDk, when the defect peak position pDk is within the fourth semiconductor region 14, the reverse recovery charge Qrr is minimized. The distance between the position in the Z-axis direction where the reverse recovery charge Qrr is minimized and the first boundary position pb1 is 0.1 μm or more. The distance between the position in the Z-axis direction where the reverse recovery charge Qrr is minimized and the first boundary position pb1 can also be 4 μm or less. By positioning the defect peak position pDk in such a location, a smaller reverse recovery charge Qrr can be obtained.

[0073] The carrier concentration (impurity concentration C1) of the first conductivity type in the fourth semiconductor region 14 is lower than the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15. It is considered that by maximizing the defect density DDx in a region with a somewhat lower carrier concentration (impurity concentration C1), the lifetime can be more effectively shortened. Thereby, the reverse recovery charge Qrr can be more effectively reduced.

[0074] For example, in the embodiment, the distance d1 along the first direction (Z-axis direction) between the first boundary position pb1 of the first boundary of the fourth semiconductor region 14 and the fifth semiconductor region 15 and the defect peak position pDk (refer to Figure 2 of (c)) is preferably 0.1 μm or more and 4 μm or less.

[0075] For example, the defect density DD in the fifth semiconductor region 15 is lower than the defect density DD in the fourth semiconductor region 14.

[0076] As Figure 4 shown, when the defect peak position pDk is within the fifth semiconductor region 15, the reverse recovery charge Qrr can also be reduced. In the embodiment, the defect peak position pDk can also be within the fourth semiconductor region 14, the fifth semiconductor region 15, or their boundary (the first boundary).

[0077] In the embodiment, defects in the semiconductor component 10 can be formed by introducing hydrogen or the like into the semiconductor component 10. The defect peak position pDk can be controlled by changing the conditions during the introduction of hydrogen or the like. The distribution of the defect density DDx can also be controlled by changing the conditions during the introduction of hydrogen or the like.

[0078] As Figure 2 shown in (a) of, the fourth semiconductor region 14 may also include the second position p2. The carrier concentration (impurity concentration C1) at the second position p2 is 10% of the carrier concentration (impurity concentration C15) of the first conductivity type in the fifth semiconductor region 15. In the embodiment, the second defect density DD2 at the second position p2 (refer to Figure 2The (c) of, for example, is 3.5 times or more the first defect density DD1. The second defect density DD2 is, for example, 0.5 times or less the highest defect density DDk.

[0079] The second boundary position pb2 in the first direction of the second boundary between the fourth semiconductor region 14 and the first semiconductor region 11 (see Figure 2 At the (c) of, the defect density DDb2 is, for example, 2.4 times or more the first defect density DD1. The defect density DDb2 is, for example, 0.3 times or less the highest defect density DDk.

[0080] As Figure 1 shown, the first partial region 11a further includes a third position p3. The direction from the third electrode end 53a to the third position p3 is along the second direction (X-axis direction). As Figure 2 shown in (a) of, the carrier concentration (impurity concentration C1) of the first conductivity type at the third position p3 can be substantially the same as the carrier concentration (impurity concentration C1) of the first conductivity type at the first position p1.

[0081] As Figure 2 shown in (c) of, let the defect density at the third position p3 be the third defect density DD3. The third defect density DD3 is equal to or less than the first defect density DD1. The third defect density DD3 can also be lower than the first defect density DD1. With a lower defect density DDx, the off-state leakage current Idss can be further suppressed.

[0082] In the embodiment, the defects are formed, for example, by introducing at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon. In this case, the concentration of the first element can also correspond to the defect density DDx.

[0083] Hereinafter, examples of the concentration of the first element (hydrogen, etc.) will be described.

[0084] Figure 5 The (a) to Figure 5 The (c) of are graphs illustrating the characteristics of the semiconductor device according to the first embodiment.

[0085] The horizontal axis of these graphs is the position pZ in the Z-axis direction. Figure 5 The vertical axis of (a) of is the impurity concentration C1 of the first conductivity type of the semiconductor component 10. Figure 5 The vertical axis of (b) of is the impurity concentration C2 of the second conductivity type of the semiconductor component 10. For example, the magnitude of the difference between the impurity concentration C1 and the impurity concentration C2 corresponds to the level of the carrier concentration. Figure 5 The vertical axis of (c) of is the concentration HCx of the first element (e.g., hydrogen, etc.). Figure 5 The (a) to Figure 5The vertical axis of (c) is in logarithmic display.

[0086] Figure 5 (a) of Figure 5 and (b) of Figure 2 are the same as (a) of Figure 2 and (b) of Figure 5 As shown in (c), the concentration HCx of the first element is the highest in the fourth semiconductor region 14. The concentration HCx of the first element may also be the highest in the fifth semiconductor region 15. The concentration HCx of the first element decreases in the first semiconductor region 11 (the first partial region 11a) in the direction from the fourth semiconductor region 14 toward the second semiconductor region 12.

[0087] The fourth semiconductor region 14 includes at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon. The first position p1 does not contain the first element. Alternatively, the concentration HC1 of the first element at the first position p1 is lower than the concentration HCx of the first element in the fourth semiconductor region 14. The first element becomes a defect and can reduce, for example, the reverse recovery charge Qrr.

[0088] As Figure 5 shown in (c), the first element peak position pCk in the first direction (Z-axis direction) where the highest concentration HCk of the first element can be obtained in the semiconductor component 10 may be in the fourth semiconductor region 14, the fifth semiconductor region 15, or their first boundary. In the example of Figure 5 (c), the first element peak position pCk is in the fourth semiconductor region 14.

[0089] As Figure 5 shown in (c), the concentration HCb1 of the first element at the first boundary position pb1 in the first direction (Z-axis direction) of the first boundary between the fourth semiconductor region 14 and the fifth semiconductor region 15 is higher than the concentration HC1 of the first element at the first position p1.

[0090] As Figure 5 shown in (c), let the distance along the first direction from the first element peak position pCk be the distance d2. As described regarding Figure 4 the distance d2 is preferably 0.1 μm or more and 4 μm or less. The reverse recovery charge Qrr is reduced more effectively.

[0091] For example, the concentration of the first element in the fifth semiconductor region 15 is lower than the concentration of the first element in the fourth semiconductor region.

[0092] As Figure 5As shown in (a), the fourth semiconductor region 14 includes a second position p2. The carrier concentration (impurity concentration C1) of the first conductivity type at the second position p2 is 10% of the carrier concentration (impurity concentration C15) of the first conductivity type at the fifth semiconductor region 15. As Figure 5 As shown in (c), let the concentration of the first element at the second position p2 be concentration HC2. The concentration HC2 is, for example, 40 times or more the concentration HC1 of the first element at the first position p1. The concentration HC2 is, for example, 0.1 times or less the highest concentration HCk of the first element.

[0093] As Figure 5 As shown in (b), let the boundary in the first direction (Z-axis direction) of the second boundary between the fourth semiconductor region 14 and the first semiconductor region 11 be the second boundary position pb2. As Figure 5 As shown in (c), let the concentration of the first element at the second boundary position pb2 be concentration HCb2. The concentration HCb2 is, for example, 8 times or more the concentration HC1 of the first element. The concentration HCb2 is, for example, 0.02 times or less the highest concentration HCk of the first element.

[0094] As Figure 1 As shown, the first partial region 11a further includes a third position p3. The direction from the third electrode end 53a to the third position p3 is along the second direction (X-axis direction). As Figure 5 As shown in (c), let the concentration of the first element at the third position p3 be concentration HC3. The concentration HC3 is equal to or less than the concentration HC1 of the first element at the first position p1. By making the concentration HC3 low, for example, the off-state leakage current Idss can be reduced.

[0095] Figure 6 is a graph showing the characteristics of the semiconductor device according to the first embodiment.

[0096] Figure 6 illustrates the distribution diagram of the concentration HCx of the first element in the case where the above-mentioned first element is hydrogen. Figure 6 On the horizontal axis is the position pZ in the Z-axis direction. On the vertical axis is the concentration HCx of the first element (hydrogen).

[0097] As Figure 6 As shown, the concentration HCx of the first element (hydrogen) at the first position p1 is lower than the concentration HCx of the first element in the fourth semiconductor region 14. The concentration HCx of the first element is the highest at the first element peak position pCk. The first element peak position pCk is in the fourth semiconductor region 14.

[0098] In this example, the distance d2 in the Z-axis direction between the peak position pCk of the first element and the first boundary position pb1 is approximately 0.18 μm. In this example, the distance in the Z-axis direction between the second position p2 and the first boundary position pb1 is approximately 0.5 μm. The distance d2 in the Z-axis direction between the second boundary position pb2 and the first boundary position pb1 is approximately 0.18 μm. In this example, the distance in the Z-axis direction between the first position p1 and the first boundary position pb1 is approximately 2.05 μm.

[0099] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0100] As Figure 7 shown, in the semiconductor device 111 according to the embodiment, the first conductive member 61 is separated from the third electrode 53 in the Z-axis direction. The first conductive member 61 can be electrically connected to the second electrode 52. Alternatively, the first conductive member 61 can be electrically connected to the second electrode 52. For example, the first conductive member 61 is electrically connected to the second electrode 52 via the connection member 61C, the connection member 52LL, and the connection member 52C. These connection members can also be provided at positions different from the Figure 1 cross-section illustrated in. For example, the terminal 61T and the terminal 52T can be electrically connected through the connection member 52LL. The connection member 52LL can also be provided independently of the semiconductor device 110. In the semiconductor device 111, the defect density DDx in the fourth semiconductor region 14 is also higher than the first defect density DD1. For example, the concentration HCx of the first element in the fourth semiconductor region 14 is higher than the concentration HC1 of the first element at the first position p1.

[0101] (Second Embodiment)

[0102] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0103] As Figure 8 shown, the semiconductor device 112 according to the embodiment also includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 61, a semiconductor component 10, and a first insulating member 41. In the semiconductor device 112, the first conductive member 61 is electrically connected to the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to the third electrode 53. The other configuration of the semiconductor device 112 can be the same as that of the semiconductor device 110.

[0104] As Figure 8 shown, for example, the first conductive member 61 is electrically connected to the third electrode 53 via the connection member 61C, the connection member 52LL, and the connection member 53C. These connection members can also be provided at positions different from theFigure 8 The positions with different cross-sections illustrated in the figure. For example, the terminal 53T may also be connected to the third electrode 53 via the connecting member 53C. The terminal 61T may also be electrically connected to the first conductive member 61 via the connecting member 61C. The terminal 61T and the terminal 53T may also be electrically connected by the connecting member 52LL. The connecting member 52LL may also be provided independently of the semiconductor device 112.

[0105] In the semiconductor device 112, the defect density DDx in the fourth semiconductor region 14 is also higher than the first defect density DD1. For example, the reverse recovery charge Qrr can be reduced. For example, the turn-off leakage current can be suppressed. For example, the loss can be reduced while suppressing the turn-off leakage.

[0106] Defects may also be formed by introducing a first element such as hydrogen. In this case, in the semiconductor device 112, for example, the first position p1 does not contain the first element. Or, the concentration HC1 of the first element at the first position p1 is lower than the concentration HCx of the first element in the fourth semiconductor region 14. Thereby, for example, the loss can be reduced while suppressing the turn-off leakage.

[0107] Figure 9 It is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0108] As Figure 9 shown, as in the example of the semiconductor device 113 according to the embodiment, the first conductive member 61 may also be continuous with the third electrode 53. In the semiconductor device 113, the defect density DDx in the fourth semiconductor region 14 is also higher than the first defect density DD1. For example, the concentration HCx of the first element in the fourth semiconductor region 14 is higher than the concentration HC1 of the first element at the first position p1.

[0109] In the semiconductor devices 112 and 113, the defect peak position pDk and the first element peak position pCk may also be applied. For example, the distance d1 along the first direction (Z-axis direction) between the first boundary position pb1 of the first boundary between the fourth semiconductor region 14 and the fifth semiconductor region 15 and the defect peak position pDk (refer to Figure 2 (c)) is preferably 0.1 μm or more and 4 μm or less. For example, let the distance along the first direction between the first boundary position pb1 and the first element peak position pCk be the distance d2. As described with respect to Figure 4 it, the distance d2 (refer to Figure 5 (c)) is preferably 0.1 μm or more and 4 μm or less.

[0110] In the above embodiment, the carrier concentration of the first conductivity type in the first semiconductor region 11 is, for example, preferably 1.0×1015 cm －3 1.0×10 or more above 17 cm －3 or less. The carrier concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0×10 16 cm －3 1.0×10 or more above 18 cm －3 or less. The carrier concentration of the first conductivity type in the third semiconductor region 13 is, for example, preferably 3.0×10 18 cm －3 3.0×10 or more above 20 cm －3 or less. The carrier concentration of the first conductivity type in the fourth semiconductor region 14 is, for example, preferably 1.0×10 17 cm －3 3.0×10 or more above 20 cm －3 or less. The carrier concentration of the first conductivity type in the fifth semiconductor region 15 is, for example, preferably 1.0×10 19 cm －3 3.0×10 or more above 20 cm －3 or less. The carrier concentration of the second conductivity type in the sixth semiconductor region 16 is, for example, preferably 1.0×10 18 cm －3 3.0×10 or more above 20 cm －3 or less.

[0111] In the above-described embodiment, for example, the impurity concentration of the first conductivity type in the third semiconductor region 13 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the first conductivity type in the fourth semiconductor region 14 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the first conductivity type in the fifth semiconductor region 15 is higher than the impurity concentration of the first conductivity type in the fourth semiconductor region 14. For example, the impurity concentration of the second conductivity type in the sixth semiconductor region 16 is higher than the impurity concentration of the second conductivity type in the second semiconductor region 12.

[0112] The impurity concentration of the first conductivity type in the first semiconductor region 11 is, for example, preferably 1.0×10 15 cm －3 1.0×10 or more above 17 cm －3 or less. The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0×10 16 cm －3 1.0×1018cm or more above－ 3 or less. The impurity concentration of the first conductivity type in the third semiconductor region 13 is preferably, for example, 3.0×10 18 cm －3 or more and 3.0×10 20 cm －3 or less. The impurity concentration of the first conductivity type in the fourth semiconductor region 14 is preferably, for example, 1.0×10 17 cm －3 or more and 3.0×10 20 cm －3 or less. The impurity concentration of the first conductivity type in the fifth semiconductor region 15 is preferably, for example, 1.0×10 19 cm －3 or more and 3.0×10 20 cm －3 or less. The impurity concentration of the second conductivity type in the sixth semiconductor region 16 is preferably, for example, 1.0×10 18 cm －3 or more and 3.0×10 20 cm －3 or less.

[0113] In an embodiment, information about the shape of the semiconductor region and the like can be obtained, for example, by observation with an electron microscope. Information about the defect density DDx in the semiconductor region can be obtained, for example, by Deep Level Transient Spectroscopy (DLTS), cathodoluminescence, photoluminescence, or transmission electron microscopy. Information about the concentration of impurities in the semiconductor region can be obtained, for example, by Energy Dispersive X-ray Spectroscopy (EDX) or Secondary Ion Mass Spectrometry (SIMS). Information about the carrier concentration in the semiconductor region can be obtained, for example, by Scanning Capacitance Microscopy (SCM).

[0114] The embodiment may include the following technical solutions.

[0115] (Technical solution 1)

[0116] A semiconductor device includes:

[0117] A first electrode;

[0118] A second electrode, the direction from the first electrode toward the second electrode is a direction along a first direction;

[0119] The third electrode, the third electrode includes a third electrode end portion and other end portions of the third electrode, and the third electrode end portion is between the first electrode and the other end portions of the third electrode in the first direction;

[0120] The first conductive member, the first conductive member includes a first conductive member end portion and other end portions of the first conductive member, the first conductive member end portion is between the first electrode and the other end portions of the first conductive member in the first direction, the position of the first conductive member end portion in the first direction is between the position of the first electrode in the first direction and the position of the third electrode end portion in the first direction, the first conductive member is electrically connected to one of the second electrode and the third electrode, or the first conductive member can be electrically connected to one of the second electrode and the third electrode;

[0121] The semiconductor component, the semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type; and

[0122] The first insulating member, at least a part of the first insulating member is between the semiconductor component and the third electrode, and between the semiconductor component and the first conductive member,

[0123] The first semiconductor region includes a first partial region and a second partial region,

[0124] The first partial region is between the first electrode and the second electrode in the first direction,

[0125] The second semiconductor region is between the first partial region and the third semiconductor region in the first direction,

[0126] The third semiconductor region is electrically connected to the second electrode,

[0127] The second direction from a part of the third electrode toward the second semiconductor region is a direction crossing the first direction,

[0128] The direction from the other part of the third electrode toward a part of the first partial region is a direction along the second direction,

[0129] The direction from the second partial region toward the first conductive member is a direction along the first direction,

[0130] The direction from the first conductive member toward the first partial region is a direction along the second direction,

[0131] The fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction described above.

[0132] The fourth semiconductor region is electrically connected to the first electrode.

[0133] The carrier concentration of the first conductivity type in the fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the first semiconductor region.

[0134] The first partial region includes a first position, and the direction from the end of the first conductive member toward the first position is a direction along the second direction.

[0135] The defect density in the fourth semiconductor region is higher than the first defect density at the first position.

[0136] (Technical solution 2)

[0137] In the semiconductor device according to Technical solution 1, the defect peak position in the first direction where the highest defect density can be obtained in the semiconductor component is in the fourth semiconductor region.

[0138] (Technical solution 3)

[0139] In the semiconductor device according to Technical solution 2,

[0140] The semiconductor component further includes a fifth semiconductor region;

[0141] The carrier concentration of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region;

[0142] The fourth semiconductor region is between the fifth semiconductor region and the first semiconductor region;

[0143] The distance along the first direction between the first boundary position in the first direction of the first boundary between the fourth semiconductor region and the fifth semiconductor region and the defect peak position is 0.1 μm or more and 4 μm or less.

[0144] (Technical solution 4)

[0145] In the semiconductor device according to Technical solution 1,

[0146] The semiconductor component further includes a fifth semiconductor region;

[0147] The carrier concentration of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region;

[0148] The above-mentioned fourth semiconductor region is located between the above-mentioned fifth semiconductor region and the above-mentioned first semiconductor region;

[0149] The peak position of defects in the above-mentioned first direction, where the highest defect density can be obtained in the above-mentioned semiconductor component, is in the above-mentioned fourth semiconductor region or the fifth semiconductor region.

[0150] (Technical solution 5)

[0151] A semiconductor device as described in Technical solution 1,

[0152] The above-mentioned semiconductor component further includes a fifth semiconductor region;

[0153] The carrier concentration of the above-mentioned first conductivity type in the above-mentioned fifth semiconductor region is higher than the carrier concentration of the above-mentioned first conductivity type in the above-mentioned fourth semiconductor region;

[0154] The above-mentioned fourth semiconductor region is located between the above-mentioned fifth semiconductor region and the above-mentioned first semiconductor region;

[0155] The defect density in the above-mentioned fifth semiconductor region is lower than the above-mentioned defect density in the above-mentioned fourth semiconductor region.

[0156] (Technical solution 6)

[0157] A semiconductor device as described in any one of Technical solutions 2 to 5,

[0158] The defect density at the second boundary position in the above-mentioned first direction of the second boundary between the above-mentioned fourth semiconductor region and the above-mentioned first semiconductor region is 3.5 times or more of the above-mentioned first defect density and 0.5 times or less of the above-mentioned highest defect density.

[0159] (Technical solution 7)

[0160] A semiconductor device as described in any one of Technical solutions 1 to 6,

[0161] The above-mentioned first partial region further includes a third position, and the direction from the end of the above-mentioned third electrode towards the above-mentioned third position is the direction along the above-mentioned second direction;

[0162] The third defect density in the above-mentioned third position is below the above-mentioned first defect density.

[0163] (Technical solution 8)

[0164] A semiconductor device as described in Technical solution 1,

[0165] The above-mentioned fourth semiconductor region includes at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon;

[0166] The first position described above does not contain the first element, or the concentration of the first element at the first position is lower than the concentration of the first element in the fourth semiconductor region.

[0167] (Technical solution 9)

[0168] For the semiconductor device according to technical solution 8,

[0169] The peak position of the first element in the first direction where the highest concentration of the first element can be obtained in the semiconductor component is in the fourth semiconductor region.

[0170] (Technical solution 10)

[0171] For the semiconductor device according to technical solution 9,

[0172] The semiconductor component further includes a fifth semiconductor region;

[0173] The carrier concentration of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region;

[0174] The fourth semiconductor region is between the fifth semiconductor region and the first semiconductor region;

[0175] The distance along the first direction between the first boundary position in the first direction of the first boundary between the fourth semiconductor region and the fifth semiconductor region and the peak position of the first element is 0.1 μm or more and 4 μm or less.

[0176] (Technical solution 11)

[0177] For the semiconductor device according to technical solution 8,

[0178] The semiconductor component further includes a fifth semiconductor region;

[0179] The carrier concentration of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region;

[0180] The fourth semiconductor region is between the fifth semiconductor region and the first semiconductor region;

[0181] The peak position of the first element in the first direction where the highest concentration of the first element can be obtained in the semiconductor component is in the fourth semiconductor region or the fifth semiconductor region.

[0182] (Technical solution 12)

[0183] For the semiconductor device according to technical solution 8,

[0184] The above semiconductor component further includes a fifth semiconductor region;

[0185] The carrier concentration of the carriers of the first conductivity type in the above fifth semiconductor region is higher than the carrier concentration of the carriers of the first conductivity type in the above fourth semiconductor region;

[0186] The above fourth semiconductor region is located between the above fifth semiconductor region and the above first semiconductor region;

[0187] The concentration of the first element in the above fifth semiconductor region is lower than the concentration of the first element in the above fourth semiconductor region.

[0188] (Technical solution 13)

[0189] A semiconductor device as described in any one of technical solutions 9 to 12,

[0190] The concentration of the first element at the second boundary position in the first direction of the second boundary between the above fourth semiconductor region and the above first semiconductor region is 40 times or more the concentration of the first element at the above first position and 0.1 times or less the highest concentration of the first element.

[0191] (Technical solution 14)

[0192] A semiconductor device as described in any one of technical solutions 1 to 6,

[0193] The above first partial region further includes a third position, and the direction from the above third electrode end portion toward the above third position is a direction along the above second direction;

[0194] The concentration of the first element at the above third position is equal to or lower than the concentration of the first element at the above first position.

[0195] (Technical solution 15)

[0196] A semiconductor device, comprising:

[0197] A first electrode;

[0198] A second electrode, and the direction from the above first electrode toward the above second electrode is a direction along the first direction;

[0199] A third electrode, the above third electrode includes a third electrode end portion and a third electrode other end portion, and the above third electrode end portion is located between the above first electrode and the above third electrode other end portion in the above first direction;

[0200] The first conductive component, the first conductive component includes a first conductive component end portion and other end portions of the first conductive component, the first conductive component end portion is between the first electrode and the other end portions of the first conductive component in the first direction, and the position of the first conductive component end portion in the first direction is between the position of the first electrode in the first direction and the position of the end portion of the third electrode in the first direction;

[0201] A semiconductor component, the semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type; and

[0202] A first insulating component, at least a part of the first insulating component is between the semiconductor component and the third electrode, and between the semiconductor component and the first conductive component,

[0203] The first semiconductor region includes a first partial region and a second partial region,

[0204] The first partial region is between the first electrode and the second electrode in the first direction,

[0205] The second semiconductor region is between the first partial region and the third semiconductor region in the first direction,

[0206] The third semiconductor region is electrically connected to the second electrode,

[0207] A second direction from a part of the third electrode toward the second semiconductor region is a direction intersecting the first direction,

[0208] A direction from another part of the third electrode toward a part of the first partial region is a direction along the second direction,

[0209] A direction from the second partial region toward the first conductive component is a direction along the first direction,

[0210] A direction from the first conductive component toward the first partial region is a direction along the second direction,

[0211] The fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction,

[0212] The fourth semiconductor region is electrically connected to the first electrode,

[0213] The carrier concentration of the first conductivity type in the fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the first semiconductor region,

[0214] The above-mentioned first partial region includes a first position, and the direction from the end of the above-mentioned first conductive component toward the above-mentioned first position is a direction along the above-mentioned second direction.

[0215] The above-mentioned fourth semiconductor region contains at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon.

[0216] The above-mentioned first position does not contain the above-mentioned first element, or the concentration of the above-mentioned first element at the above-mentioned first position is lower than the concentration of the above-mentioned first element in the above-mentioned fourth semiconductor region.

[0217] (Technical solution 16)

[0218] A semiconductor device as described in Technical solution 15.

[0219] The peak position of the first element in the first direction where the highest concentration of the first element can be obtained in the above-mentioned semiconductor component is within the above-mentioned fourth semiconductor region.

[0220] (Technical solution 17)

[0221] A semiconductor device as described in Technical solution 16.

[0222] The above-mentioned semiconductor component further includes a fifth semiconductor region;

[0223] The carrier concentration of the above-mentioned first conductivity type in the above-mentioned fifth semiconductor region is higher than the carrier concentration of the above-mentioned first conductivity type in the above-mentioned fourth semiconductor region;

[0224] The above-mentioned fourth semiconductor region is located between the above-mentioned fifth semiconductor region and the above-mentioned first semiconductor region;

[0225] The distance along the above-mentioned first direction between the first boundary position in the above-mentioned first direction of the first boundary between the above-mentioned fourth semiconductor region and the above-mentioned fifth semiconductor region and the peak position of the first element is 0.1 μm or more and 4 μm or less.

[0226] (Technical solution 18)

[0227] A semiconductor device as described in any one of Technical solutions 1 to 17.

[0228] The position of the above-mentioned third electrode in the above-mentioned second direction is between the position of the above-mentioned first conductive component in the above-mentioned second direction and the position of the above-mentioned first partial region in the above-mentioned second direction.

[0229] (Technical solution 19)

[0230] A semiconductor device as described in any one of Technical solutions 1 to 17.

[0231] The position of the third electrode in the first direction is between the position of the first electrode in the first direction and the position of the second electrode in the first direction.

[0232] (Technical solution 20)

[0233] The semiconductor device according to any one of Technical solutions 1 to 19,

[0234] The semiconductor component further includes a sixth semiconductor region of the second conductivity type provided between the second semiconductor region and the second electrode;

[0235] The carrier concentration of the second conductivity type in the sixth semiconductor region is higher than the carrier concentration of the second conductivity type in the second semiconductor region.

[0236] According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0237] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configurations of the semiconductor components, semiconductor regions, conductive components, electrodes, insulating components, etc. included in the semiconductor device, as long as those skilled in the art can similarly implement the present invention by appropriately selecting from the well-known range and can obtain the same effects, they are included in the scope of the present invention.

[0238] In addition, the forms in which two or more elements of each specific example are combined within the technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0239] In addition, all semiconductor devices obtained by appropriately making design changes based on the semiconductor device described as an embodiment of the present invention by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention.

[0240] In addition, it should be understood that within the scope of the idea of the present invention, various modification examples and correction examples can be conceived by those skilled in the art, and these modification examples and correction examples also belong to the scope of the present invention.

[0241] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and its equivalent scope.

Claims

1. A semiconductor device, wherein, Comprising: A first electrode; A second electrode, the direction from the above-mentioned first electrode towards the above-mentioned second electrode being a direction along a first direction; A third electrode, the above-mentioned third electrode including a third electrode end portion and a third electrode other end portion, the third electrode end portion being between the above-mentioned first electrode and the third electrode other end portion in the above-mentioned first direction; A first conductive member, the above-mentioned first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being between the above-mentioned first electrode and the first conductive member other end portion in the above-mentioned first direction, the position of the first conductive member end portion in the above-mentioned first direction being between the position of the first electrode in the above-mentioned first direction and the position of the third electrode end portion in the above-mentioned first direction, the first conductive member being electrically connected to one of the above-mentioned second electrode and the above-mentioned third electrode, or the first conductive member being capable of being electrically connected to one of the above-mentioned second electrode and the above-mentioned third electrode; A semiconductor component, the above-mentioned semiconductor component including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the above-mentioned first conductivity type, and a fourth semiconductor region of the above-mentioned first conductivity type; And A first insulating member, at least a part of the above-mentioned first insulating member being between the above-mentioned semiconductor component and the above-mentioned third electrode, and between the above-mentioned semiconductor component and the above-mentioned first conductive member, In the above-mentioned semiconductor component, The above-mentioned first semiconductor region includes a first partial region and a second partial region, The above-mentioned first partial region is between the above-mentioned first electrode and the above-mentioned second electrode in the above-mentioned first direction, The above-mentioned second semiconductor region is between the above-mentioned first partial region and the above-mentioned third semiconductor region in the above-mentioned first direction, The above-mentioned third semiconductor region is electrically connected to the above-mentioned second electrode, A second direction from a part of the above-mentioned third electrode towards the above-mentioned second semiconductor region is a direction intersecting the above-mentioned first direction, A direction from another part of the above-mentioned third electrode towards a part of the above-mentioned first partial region is a direction along the above-mentioned second direction, A direction from the above-mentioned second partial region towards the above-mentioned first conductive member is a direction along the above-mentioned first direction, A direction from the above-mentioned first conductive member towards the above-mentioned first partial region is a direction along the above-mentioned second direction, The above-mentioned fourth semiconductor region is provided between the above-mentioned first electrode and the above-mentioned first semiconductor region in the above-mentioned first direction, The above-mentioned fourth semiconductor region is electrically connected to the above-mentioned first electrode, The carrier concentration of the first conductivity type in the above-mentioned fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the above-mentioned first semiconductor region, The above-mentioned first partial region includes a first position, the direction from the above-mentioned first conductive member end portion towards the above-mentioned first position being a direction along the above-mentioned second direction, The defect density in the above-mentioned fourth semiconductor region is higher than the first defect density at the above-mentioned first position, The above-mentioned semiconductor component further includes a fifth semiconductor region, The carrier concentration of the carriers of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the carriers of the first conductivity type in the fourth semiconductor region. The fourth semiconductor region is located between the fifth semiconductor region and the first semiconductor region. The defect density in the fifth semiconductor region is lower than the defect density in the fourth semiconductor region.

2. The semiconductor device according to claim 1, wherein, The defect peak position in the first direction where the highest defect density can be obtained in the semiconductor component is located in the fourth semiconductor region. The defect density at the second boundary position in the first direction of the second boundary between the fourth semiconductor region and the first semiconductor region is 3.5 times or more of the first defect density and 0.5 times or less of the highest defect density.

3. A semiconductor device, wherein, Comprising: A first electrode; A second electrode, the direction from the first electrode towards the second electrode is a direction along the first direction; A third electrode, the third electrode includes a third electrode end portion and a third electrode other end portion, and the third electrode end portion is located between the first electrode and the third electrode other end portion in the first direction; A first conductive component, the first conductive component includes a first conductive component end portion and a first conductive component other end portion, the first conductive component end portion is located between the first electrode and the first conductive component other end portion in the first direction, the position of the first conductive component end portion in the first direction is between the position of the first electrode in the first direction and the position of the third electrode end portion in the first direction, the first conductive component is electrically connected to one of the second electrode and the third electrode, or the first conductive component can be electrically connected to one of the second electrode and the third electrode; A semiconductor component, the semiconductor component includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type; And A first insulating component, at least a part of the first insulating component is located between the semiconductor component and the third electrode, and between the semiconductor component and the first conductive component. In the semiconductor component, The first semiconductor region includes a first partial region and a second partial region. The first partial region is located between the first electrode and the second electrode in the first direction. The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. The second direction from a part of the third electrode towards the second semiconductor region is a direction intersecting the first direction. The direction from another part of the third electrode towards a part of the first partial region is a direction along the second direction. The direction from the second partial region towards the first conductive component is a direction along the first direction. The direction from the first conductive component towards the first partial region is a direction along the second direction. The fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction, the fourth semiconductor region is electrically connected to the first electrode, the carrier concentration of the first conductivity type in the fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the first semiconductor region, the first partial region includes a first position, and the direction from the end of the first conductive member toward the first position is a direction along the second direction, the defect density in the fourth semiconductor region is higher than the first defect density at the first position, the defect peak position in the first direction where the highest defect density can be obtained in the semiconductor component is in the fourth semiconductor region, the defect density at the second boundary position in the first direction of the second boundary between the fourth semiconductor region and the first semiconductor region is 3.5 times or more the first defect density and 0.5 times or less the highest defect density.

4. The semiconductor device according to any one of claims 1 to 3, wherein, the first partial region further includes a third position, and the direction from the end of the third electrode toward the third position is a direction along the second direction, the third defect density at the third position is the first defect density or less.

5. The semiconductor device according to claim 1, wherein, the fourth semiconductor region includes at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon, the first position does not contain the first element, or the concentration of the first element at the first position is lower than the concentration of the first element in the fourth semiconductor region.

6. The semiconductor device according to claim 5, wherein, the first element peak position in the first direction where the highest concentration of the first element can be obtained in the semiconductor component is in the fourth semiconductor region.

7. The semiconductor device according to claim 6, wherein, the distance along the first direction between the first boundary position in the first direction of the first boundary between the fourth semiconductor region and the fifth semiconductor region and the first element peak position is 0.1 μm or more and 4 μm or less.

8. The semiconductor device according to claim 6 or 7, wherein, the concentration of the first element at the second boundary position in the first direction of the second boundary between the fourth semiconductor region and the first semiconductor region is 40 times or more the concentration of the first element at the first position and 0.1 times or less the highest concentration of the first element.

9. A semiconductor device, wherein, comprising: a first electrode; a second electrode, the direction from the first electrode toward the second electrode is a direction along the first direction; a third electrode, the third electrode includes a third electrode end portion and a third electrode other end portion, and the third electrode end portion is between the first electrode and the third electrode other end portion in the first direction; The first conductive component, the first conductive component includes a first conductive component end portion and other end portions of the first conductive component. The first conductive component end portion is between the first electrode and the other end portions of the first conductive component in the first direction. The position of the first conductive component end portion in the first direction is between the position of the first electrode in the first direction and the position of the end portion of the third electrode in the first direction. The first conductive component is electrically connected to one of the second electrode and the third electrode, or the first conductive component can be electrically connected to one of the second electrode and the third electrode; A semiconductor component, the semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type; And A first insulating component, at least a part of the first insulating component is between the semiconductor component and the third electrode, and between the semiconductor component and the first conductive component, In the semiconductor component, The first semiconductor region includes a first partial region and a second partial region, The first partial region is between the first electrode and the second electrode in the first direction, The second semiconductor region is between the first partial region and the third semiconductor region in the first direction, The third semiconductor region is electrically connected to the second electrode, The second direction from a part of the third electrode toward the second semiconductor region is a direction intersecting the first direction, The direction from another part of the third electrode toward a part of the first partial region is a direction along the second direction, The direction from the second partial region toward the first conductive component is a direction along the first direction, The direction from the first conductive component toward the first partial region is a direction along the second direction, The fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction, The fourth semiconductor region is electrically connected to the first electrode, The carrier concentration of the first conductivity type in the fourth semiconductor region is higher than the carrier concentration of the first conductivity type in the first semiconductor region, The first partial region includes a first position. The direction from the first conductive component end portion toward the first position is a direction along the second direction, The defect density in the fourth semiconductor region is higher than the first defect density at the first position, The fourth semiconductor region contains at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon, The first position does not contain the first element, or the concentration of the first element at the first position is lower than the concentration of the first element in the fourth semiconductor region, The semiconductor component further includes a fifth semiconductor region, The carrier concentration of the first conductivity type in the fifth semiconductor region is higher than the carrier concentration of the first conductivity type in the fourth semiconductor region, The above-mentioned fourth semiconductor region is located between the above-mentioned fifth semiconductor region and the above-mentioned first semiconductor region. The concentration of the above-mentioned first element in the above-mentioned fifth semiconductor region is lower than the concentration of the above-mentioned first element in the above-mentioned fourth semiconductor region.

10. A semiconductor device, wherein, It includes: A first electrode; A second electrode, and the direction from the above-mentioned first electrode towards the above-mentioned second electrode is a direction along a first direction; A third electrode, the above-mentioned third electrode includes a third electrode end portion and a third electrode other end portion, and the third electrode end portion is located between the above-mentioned first electrode and the third electrode other end portion in the above-mentioned first direction; A first conductive member, the above-mentioned first conductive member includes a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion is located between the above-mentioned first electrode and the first conductive member other end portion in the above-mentioned first direction, the position of the first conductive member end portion in the above-mentioned first direction is between the position of the above-mentioned first electrode in the above-mentioned first direction and the position of the third electrode end portion in the above-mentioned first direction, the first conductive member is electrically connected to one of the above-mentioned second electrode and the above-mentioned third electrode, or the first conductive member can be electrically connected to one of the above-mentioned second electrode and the above-mentioned third electrode; A semiconductor component, the above-mentioned semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the above-mentioned first conductivity type, and a fourth semiconductor region of the above-mentioned first conductivity type; And A first insulating member, at least a part of the above-mentioned first insulating member is located between the above-mentioned semiconductor component and the above-mentioned third electrode, and between the above-mentioned semiconductor component and the above-mentioned first conductive member. In the above-mentioned semiconductor component, The above-mentioned first semiconductor region includes a first partial region and a second partial region. The above-mentioned first partial region is located between the above-mentioned first electrode and the above-mentioned second electrode in the above-mentioned first direction. The above-mentioned second semiconductor region is located between the above-mentioned first partial region and the above-mentioned third semiconductor region in the above-mentioned first direction. The above-mentioned third semiconductor region is electrically connected to the above-mentioned second electrode. A second direction from a part of the above-mentioned third electrode towards the above-mentioned second semiconductor region is a direction intersecting the above-mentioned first direction. A direction from another part of the above-mentioned third electrode towards a part of the above-mentioned first partial region is a direction along the above-mentioned second direction. A direction from the above-mentioned second partial region towards the above-mentioned first conductive member is a direction along the above-mentioned first direction. A direction from the above-mentioned first conductive member towards the above-mentioned first partial region is a direction along the above-mentioned second direction. The above-mentioned fourth semiconductor region is provided between the above-mentioned first electrode and the above-mentioned first semiconductor region in the above-mentioned first direction. The above-mentioned fourth semiconductor region is electrically connected to the above-mentioned first electrode. The carrier concentration of the above-mentioned first conductivity type in the above-mentioned fourth semiconductor region is higher than the carrier concentration of the above-mentioned first conductivity type in the above-mentioned first semiconductor region. The above-mentioned first partial region includes a first position, and the direction from the above-mentioned first conductive member end portion towards the above-mentioned first position is a direction along the above-mentioned second direction. The defect density in the fourth semiconductor region is higher than the first defect density at the first position above. The fourth semiconductor region contains at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon. The first position does not contain the first element, or the concentration of the first element at the first position is lower than the concentration of the first element in the fourth semiconductor region. The peak position of the first element in the first direction where the highest concentration of the first element can be obtained in the semiconductor component is in the fourth semiconductor region. The concentration of the first element at the second boundary position in the first direction of the second boundary between the fourth semiconductor region and the first semiconductor region is 40 times or more the concentration of the first element at the first position and 0.1 times or less the highest concentration of the first element.

11. The semiconductor device according to claim 10, wherein, The first partial region further includes a third position, and the direction from the end of the third electrode toward the third position is along the second direction. The concentration of the first element at the third position is equal to or lower than the concentration of the first element at the first position.

12. The semiconductor device according to claim 10, wherein, The position of the third electrode in the second direction is between the position of the first conductive component in the second direction and the position of the first partial region in the second direction.

13. The semiconductor device according to claim 10, wherein, The position of the third electrode in the first direction is between the position of the first electrode in the first direction and the position of the second electrode in the first direction.

14. The semiconductor device according to claim 10, wherein, The semiconductor component further includes a sixth semiconductor region of the second conductivity type provided between the second semiconductor region and the second electrode. The carrier concentration of the second conductivity type in the sixth semiconductor region is higher than the carrier concentration of the second conductivity type in the second semiconductor region.

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