Radiation source testing

Abstract

A method for generating a test for a radiation source for use in a lithographic apparatus, the method comprising the steps of: receiving data corresponding to a plurality of shot patterns of the radiation source. The method further comprises the steps of: analyzing the data to determine parameters for configuring one or more additional shot patterns, the one or more additional shot patterns being used to test the radiation source. The parameters are determined such that the stability of the radiation source when executing the one or more additional shot patterns configured using the parameters is substantially the same as, or within predetermined limits relative to, the stability of the radiation source when executing the plurality of shot patterns. Additionally, the parameters are determined such that the total duration of the one or more additional shot patterns, when executed by the radiation source, is less than the duration of the plurality of shot patterns when executed by the radiation source.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Application No. 62 / 928,254, filed on October 30, 2019, entitled “RADIATION SOURCE TESTING,” which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a method and system for generating a test for a radiation source, and related computer program, computer readable medium and data processing apparatus.The radiation source may be a radiation source for a lithographic apparatus. Background Art

[0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). For example, a lithographic apparatus can project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

[0005] To project a pattern onto a substrate, a lithographic apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. For example, a lithographic apparatus using extreme ultraviolet (EUV) radiation with a wavelength in the range of 4 to 20 nm (e.g., 6.7 nm or 13.5 nm) can be used to form smaller features on a substrate than a lithographic apparatus using radiation with a wavelength of, for example, 193 nm.

[0006] Electromagnetic radiation can be provided by a radiation source, which can be, for example, an EUV or deep ultraviolet (DUV) radiation source. Such a radiation source is typically controlled throughout the lithography process to provide radiation with the desired characteristics, thereby ensuring that the correct and timely radiation dose is provided to the substrate. An accurate and reliable radiation source is critical to the lithography process.

[0007] In order to ensure the accuracy and / or reliability and / or stability of the radiation source, it is desirable to test the radiation source at certain intervals.However, in a production environment, there are limited opportunities to test the radiation source without significantly interrupting the production process.

[0008] Furthermore, it is desirable to test a radiation source with a usage profile as similar as possible to the usage profile used in a production environment. However, the usage profile used in a production environment may include proprietary information, and thus information related to the usage profile may not be readily available or accessible to the test radiation source.

[0009] This background is used to set the scene to allow the skilled reader to better understand the following description. Therefore, nothing in the above discussion must be considered as an admission that the discussion is part of the prior art or common general knowledge. One or more aspects / embodiments of the present invention may or may not address one or more of the background issues.

[0010] It is an object of at least one embodiment of at least one aspect of the present invention to obviate or at least mitigate at least one problem in the prior art.

[0011] Furthermore, it is an object of at least one embodiment of at least one aspect of the present invention to provide a technically and commercially efficient method for testing radiation sources. Summary of the Invention

[0012] According to a first aspect of the present invention, there is provided a method for generating a test for a radiation source for use in a lithographic device, the method comprising the following steps: receiving data corresponding to a plurality of emission patterns of the radiation source; and analyzing the data to determine parameters for configuring one or more additional emission patterns, the one or more additional emission patterns being used to test the radiation source; wherein the parameters are determined so that the stability of the radiation source when executing the one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, and the total duration of the one or more additional emission patterns when executed by the radiation source will be less than the duration of the plurality of emission patterns when executed by the radiation source.

[0013] Advantageously, this method enables testing of a radiation source with a usage profile that has substantially the same effect on the radiation source as the usage profile used during substrate production. That is, the radiation source is tested using a usage profile that has substantially the same effect on, for example, the stability of the radiation source as the usage profile used during substrate production. By testing the radiation source according to this method and thereby stressing the radiation source in a manner substantially similar to how the radiation source would be stressed during substrate production, confidence in the accuracy and / or reliability and / or stability of the radiation source can be increased.

[0014] The stability of the radiation source may be intrinsic stability.

[0015] The stability of the radiation source can be actively controlled.

[0016] The stability of the radiation source may be at least one of the following: wavelength stability; bandwidth stability; energy stability; temperature stability.

[0017] The predetermined limit may correspond to a defined deviation from at least one of a target temperature of the radiation source, and / or a target wavelength and / or bandwidth and / or energy of radiation from the radiation source.

[0018] The parameters may include at least one of the following: number of patterns; number of unique patterns; characteristics of unique patterns; frequency of patterns; number of bursts per pattern; number of pulses per burst; duty cycle information; frequency and / or amplitude and / or phase modulation information; timestamp; radiation source identification information; beam energy profile of each pattern; beam wavelength profile of each pattern; beam bandwidth profile of each pattern.

[0019] The parameters can be determined based on at least one of the following: the number of recurring identical emission patterns; the number of emission patterns having characteristics within a predetermined threshold; the number of repeated identical or similar emission patterns; the repetition frequency of repeated identical or similar emission patterns or sequences; induced changes in the wavelength, bandwidth and / or energy of the radiation; and induced changes in the temperature of the radiation source.

[0020] The method may further comprise the step of configuring a program for the computer to control the radiation source using the parameters.

[0021] The method may further comprise the step of controlling the radiation source to perform one or more further emission patterns.

[0022] The radiation source may be tested while the lithographic apparatus is in an offline configuration.

[0023] When the radiation source is under the control of a lithographic apparatus, data corresponding to a plurality of shot patterns of the radiation source may be generated.

[0024] All steps of the method according to the first aspect may be performed in-situ within a semiconductor manufacturing facility.

[0025] According to a second aspect of the present invention, there is provided a computer program comprising instructions which, when executed by a computer, cause the computer to perform the method according to the first aspect.

[0026] The computer program may comprise instructions which, when executed by a computer, cause the computer to control the radiation source to perform one or more further emission patterns.

[0027] A computer program may include instructions that, when the program is executed by a computer, cause the computer to provide data corresponding to the parameters to another program.

[0028] A computer program may include instructions that, when executed by a computer, cause the computer to generate a script corresponding to parameters to be executed by another computer.

[0029] A computer program may include instructions that, when executed by a computer, cause the computer to generate data corresponding to parameters for a script or program on another computer.

[0030] According to a third aspect of the present invention, there is provided a computer readable medium having stored thereon the computer program according to the second aspect.

[0031] According to a fourth aspect of the present invention, there is provided a data processing device comprising a memory and a processor adapted to perform the method according to the first aspect.

[0032] According to a fifth aspect of the invention, there is provided a system for generating a test for a radiation source for use in a lithographic device, the system comprising: a data storage device configured to store data corresponding to a plurality of emission patterns of the radiation source; and a processor capable of being communicatively coupled to the data storage device and configured to: analyze the data to determine parameters for configuring one or more additional emission patterns, the one or more additional emission patterns being used to test the radiation source; wherein the parameters are determined so that the stability of the radiation source when executing the one or more additional emission patterns configured using the parameters is substantially the same as the stability of the radiation source when executing the plurality of emission patterns or is within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, and the total duration of the one or more additional emission patterns when executed by the radiation source will be less than the duration of the plurality of emission patterns when executed by the radiation source.

[0033] The system may include a radiation source. The radiation source may be a DUV or EUV radiation source.

[0034] The system may include a lithographic apparatus. The lithographic apparatus may be configured to control a radiation source and generate data corresponding to a plurality of shot patterns.

[0035] The lithographic apparatus may comprise a processor or be communicatively coupled to a processor such that the lithographic apparatus is configured to control the radiation source to perform the one or more second shot patterns.

[0036] According to a sixth aspect of the present invention, there is provided a method for generating a test for a radiation source for use in a lithography device, the method comprising: receiving first data corresponding to one or more first emission patterns of the radiation source; analyzing the first data to identify emission patterns and / or parts of emission patterns, which emission patterns and / or parts of emission patterns affect the stability of the radiation source within a predetermined range relative to other emission patterns and / or other parts of the emission pattern; and generating second data corresponding to one or more second emission patterns of the radiation source, wherein the second data is based on the analysis of the first data.

[0037] The method may comprise configuring the computer program using the second data to operate the radiation source using one or more second emission patterns.

[0038] Analyzing the first data may include binning the first data into discrete bins, wherein the discrete bins are defined by thresholds, and the stability of the radiation source may vary within the thresholds by less than a predetermined range.

[0039] Analyzing the first data may include identifying one or more consecutive portions of the emission pattern that may affect stability of the radiation source within a predetermined range.

[0040] The plurality of shot patterns may span a first time period, and the one or more second shot patterns, when performed by the radiation source, may span a second time period, and wherein the first time period is substantially greater than the second time period.

[0041] The stability of the radiation source may be inherent stability and / or actively controlled stability. The stability of the radiation source may be at least one of the following: wavelength stability; bandwidth stability; energy stability; and temperature stability.

[0042] The first data may correspond to a usage profile of the radiation source.

[0043] The first data and / or the second data may include characteristics of one or more emission patterns, wherein the characteristics include at least one of the following items: the number of emission patterns; the number of unique emission patterns; the frequency of one or more emission patterns; the number of bursts of each emission pattern; the number of pulses of each burst; duty cycle information; frequency and / or amplitude and / or phase modulation information; one or more timestamps; radiation source identification information; beam energy profile of each pattern; beam wavelength profile of each pattern; beam bandwidth profile of each pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which:

[0045] Figure 1 A lithographic system including a lithographic apparatus and a radiation source is depicted;

[0046] Figure 2 Examples of data representing radiation source emission patterns for three substrates are provided;

[0047] Figure 3 A method of generating a test for a radiation source for a lithographic apparatus is shown;

[0048] Figure 4 Another example of data representing radiation source emission patterns for three substrates is provided;

[0049] Figure 5 An example of a process for deriving features from an emission pattern is shown;

[0050] Figure 6 An example of features derived from multiple similar emission patterns in a semiconductor manufacturing environment is shown; and

[0051] Figure 7 A table of experimental data is shown. DETAILED DESCRIPTION

[0052] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g., having a wavelength of 365, 248, 193, 157 or 126 nm) and EUV (extreme ultraviolet radiation, e.g., having a wavelength in the range of about 5 to 100 nm). The terms "reticle," "mask," or "patterning device" as used herein may be broadly interpreted to refer to a general patterning device that can be used to impart a patterned cross-section to an incident radiation beam, the patterned cross-section corresponding to the pattern to be produced in a target portion of a substrate. The term "light valve" may also be used herein. In addition to classical masks (transmissive or reflective, binary, phase-shifting, hybrid, etc.), examples of other such patterning devices include programmable mirror arrays and programmable LCD arrays.

[0053] Figure 1 A lithographic apparatus LA is schematically depicted. The lithographic apparatus LA comprises an illumination system (also called illuminator) IL configured to condition a radiation beam B (e.g., UV radiation, DUV radiation, or EUV radiation), a mask support (e.g., mask table) MT configured to support a patterning device (e.g., mask) MA and connected to a first positioner PM configured to accurately position the patterning device MA according to certain parameters, a substrate support (e.g., wafer stage) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate support according to certain parameters, and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0054] In operation, the illumination system IL receives a radiation beam from a radiation source SO, for example, via a beam delivery system BD. The illumination system IL may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, and / or other types of optical components, or any combination thereof, for directing, shaping, and / or controlling the radiation. The illuminator IL may be used to condition the radiation beam B so that it has a desired spatial and angular intensity distribution in its cross-section at the plane of the patterning device MA.

[0055] The term "projection system" PS as used herein should be broadly interpreted as covering various types of projection systems, including refractive, reflective, catadioptric, anamorphic, magnetic, electromagnetic and / or electrostatic optical systems, or any combination thereof, appropriate to the exposure radiation used, and / or to other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system" PS.

[0056] The lithographic apparatus LA may be of a type in which at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, such as water, so as to fill the space between the projection system PS and the substrate W, which is also known as immersion lithography. More information on immersion technology is given in US6952253, which is incorporated herein by reference.

[0057] The lithographic apparatus LA may also be of a type having two or more substrate supports WT (also referred to as a "dual stage"). In such a "multi-stage" machine, the substrate supports WT may be used in parallel, and / or steps for preparing a substrate W for subsequent exposure may be performed on a substrate W on one of the substrate supports WT while another substrate W on another substrate support WT is being used to expose a pattern on the other substrate W.

[0058] In addition to the substrate support WT, the lithographic apparatus LA can include a measurement stage. The measurement stage is arranged to hold sensors and / or cleaning devices. The sensors can be arranged to measure properties of the projection system PS or properties of the radiation beam B. The measurement stage can hold multiple sensors. The cleaning devices can be arranged to clean parts of the lithographic apparatus, such as a portion of the projection system PS or a portion of a system for providing immersion liquid. The measurement stage can be moved beneath the projection system PS when the substrate support WT is away from the projection system PS.

[0059] In operation, a radiation beam B is incident on a patterning device (e.g. a mask) MA held on a mask support MT and is patterned by a pattern (design layout) present on the patterning device MA. After passing through the mask MA, the radiation beam B passes through a projection system PS which focuses the radiation beam onto a target portion C of a substrate W. With the aid of a second positioner PW and a position measurement system IF, the substrate support WT can be accurately moved, for example in order to position different target portions C in the path of the radiation beam B in a focused and aligned position. Similarly, a first positioner PM and possibly another position sensor ( Figure 1 The patterning device MA is positioned relative to the path of the radiation beam B using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the illustrated substrate alignment marks P1, P2 occupy dedicated target portions, they may be located in spaces between target portions. When the substrate alignment marks P1, P2 are located between target portions C, they are referred to as scribe-lane alignment marks.

[0060] The radiation source SO can be configured to provide a radiation beam B having predetermined characteristics and timing to provide a desired radiation dose to the substrate. In this way, the radiation beam B generated by the radiation source SO is provided as one or more shot patterns, where the shot pattern defines the characteristics of the radiation beam B.

[0061] A shot pattern is a term used in the art to describe the characteristics of a beam B from a radiation source SO. For example, a shot pattern can include a sequence of radiation pulses. The pulse sequence can have, for example, specific timing and / or duration, such as frequency and / or duty cycle, to provide a desired dose to the substrate at desired intervals.

[0062] The radiation pulses may be emitted by the radiation source SO as a burst (e.g., a train of pulses). For example, a typical radiation burst in a semiconductor manufacturing environment may include in the range of hundreds of radiation pulses. Typically, but not necessarily, the pulses within a burst are periodic, e.g., each pulse within a burst has substantially the same duration and / or duty cycle and, therefore, delivers substantially the same amount of radiation to the substrate as another pulse within the same burst.

[0063] The number of pulses in each burst can be controlled during the lithography process so that the number of pulses in a burst can be different from the number of pulses in a previous or subsequent burst.

[0064] The frequency of pulses within a burst can be expressed as a burst repetition rate. For example, pulses within a burst in a semiconductor manufacturing environment may have a repetition rate in the kHz range. The repetition rate of each burst can also be controlled throughout the lithography process. Thus, the frequency of pulses in a burst can differ from the frequency of pulses in previous or subsequent bursts.

[0065] The interval between bursts, which is referred to as the burst interval or inter-burst interval, can be controlled during the lithography process. The interval between bursts in a semiconductor manufacturing environment can be in the range of milliseconds to seconds, for example.

[0066] For example purposes only, Figure 2 An example of data representing radiation source emission patterns for three substrates is provided. A first graph 100 shows the number of pulses per burst for the emission pattern for each of the three substrates. The horizontal axis represents the burst index. For example, it can be seen that the 20th burst for the first substrate includes approximately 180 radiation pulses, the 20th burst for the second substrate includes approximately 250 radiation pulses, and the 20th burst for the third substrate includes approximately 370 radiation pulses. It should be understood that Figure 2 The shot patterns shown for the three substrates may be in any temporal order. That is, data representing any one of the first, second, or third shot patterns may represent a shot pattern that occurs before or after any other of the first, second, or third shot patterns.

[0067] The second graph 110 shows the repetition rate of the pulses in each burst of the emission pattern. For example, it can be seen that the 20th burst for the first substrate has a repetition rate of approximately 4000 Hz, the 20th burst for the second substrate has a repetition rate of approximately 4400 Hz, and the 20th burst for the third substrate has a repetition rate of approximately 5400 Hz. It should be understood that Figure 2 The shot patterns shown for the three substrates may be in any temporal order. That is, data representing any one of the first, second, or third shot patterns may represent a shot pattern that occurs before or after any other of the first, second, or third shot patterns.

[0068] The third graph 120 shows the burst interval of each burst for each shot pattern. For example, the 20th burst of the shot pattern for the first substrate has a burst interval of approximately 0.08 seconds, the 20th burst of the shot pattern for the second substrate has a burst interval of approximately 0.16 seconds, and the 20th burst of the shot pattern for the third substrate has a burst interval of approximately 0.40 seconds. It should be understood that Figure 2The shot patterns shown for the three substrates may be in any temporal order. That is, data representing any one of the first, second, or third shot patterns may represent a shot pattern that occurs before or after any other of the first, second, or third shot patterns.

[0069] Thus, as can be seen from graphs 100, 110, and 120, the emission patterns for different substrates can vary depending on their characteristics. It can also be seen that, for any given substrate, the characteristics of the emission pattern vary over time. That is, the burst interval, repetition rate, and pulses per burst of the emission pattern can vary over time and / or can vary from substrate to substrate.

[0070] Such changes in the characteristics of the emission pattern may affect the inherent dynamic characteristics of the radiation source SO and / or controller stability. That is, the radiation source SO may be required to provide radiation having certain characteristics, such as a specific energy level delivered at a specific frequency. Changes in the characteristics of the emission pattern may affect the ability of the radiation source to deliver radiation that meets target parameters.

[0071] The radiation source SO may include at least one, and typically a plurality of, feedback controllers that can be configured to adjust actuators within the radiation source SO and / or throughout the lithographic apparatus LA such that radiation emitted by the radiation source SO meets a desired specification. For example, where a target radiation wavelength is 193.0 nm and the radiation source SO emits radiation having a wavelength of 193.1 nm, a controller referred to as a wavelength controller may observe an error of 0.1 nm in the wavelength of the emitted radiation and adjust internal components within the radiation source SO accordingly such that subsequent radiation pulses have a wavelength of 193.0 nm, thereby meeting the target wavelength.

[0072] The radiation source SO can be operated with or without a feedback controller. Operation without the presence or activation of a feedback controller is referred to as "intrinsic operation." Continuing with the above example, the energy of a series of pulses from the radiation source SO can be, for example, 10.4 mJ, 10.9 mJ, and 9.2 mJ, where the feedback controller is not activated and each pulse has a target of 10 mJ.

[0073] In contrast, when the feedback controller is enabled, the performance of the radiation source SO can be stabilized, or stabilized more quickly, so that the energy of the pulses can be increased to, for example, 10.1 mJ, 10.2 mJ, and 9.9 mJ. That is, the deviation from the target energy level of each pulse has been reduced, or reduced more quickly.

[0074] The stability of a radiation source SO with a disabled feedback controller is referred to as the intrinsic stability of the light source. Changes in the output of the radiation source when the controller is disabled (such as due to changes in the emission pattern) are referred to as or represent the intrinsic dynamics of the radiation source SO. The intrinsic stability of the radiation source SO depends on this intrinsic dynamics.

[0075] The stability of the radiation source SO with the feedback controller enabled is referred to as the controlled stability of the radiation source SO.

[0076] Changes in the emission pattern of the radiation source SO may affect the intrinsic and controlled stability of the feedback controller(s).

[0077] In particular, intrinsic stability is often sensitive to changes in the burst repetition rate. That is, changes in the burst repetition rate of the emission pattern may at least temporarily degrade the intrinsic performance of the radiation source SO, such as the ability of the radiation source to output radiation meeting target specifications.

[0078] Likewise, the controlled stability of one or more feedback controllers may be particularly sensitive to changes in the emission pattern. For example, long intervals between bursts may interfere with controller functionality, thereby degrading the performance of the radiation source SO, such as its ability to output radiation meeting target specifications.

[0079] The intrinsic stability and / or controlled stability of the radiation source SO may correspond, for example, to wavelength stability, bandwidth stability and / or energy stability.The intrinsic stability and / or controlled stability of the radiation source SO may correspond, for example, to temperature stability of the radiation source.

[0080] In a production environment, the emission pattern of the radiation source SO can be controlled by the lithographic apparatus LA. That is, the lithographic apparatus LA can communicate information and / or data and / or parameters related to a specific emission pattern and / or a specific desired radiation dose to the radiation source SO. The radiation source SO can then be controlled and / or configured to emit a specific emission pattern in response to such information and / or data and / or parameters. In this way, when the radiation source is under the control of the lithographic apparatus, data corresponding to multiple emission patterns of the radiation source can be generated.

[0081] The specific emission pattern and / or specific radiation dose may be associated with a pattern to be applied to the substrate by the lithographic apparatus LA. Typically, such a pattern to be applied to the substrate may include private information, e.g., information that is confidential and associated with the specific pattern to be applied to the substrate. Thus, when the radiation source SO is controlled by the lithographic apparatus LA, the emission pattern generated by the radiation source SO may indirectly include private information.

[0082] In a production environment, it may be necessary to intermittently test the radiation source SO to ensure correct and / or sufficiently accurate and / or reliable performance. It is desirable to test the radiation source SO using an emission pattern that is the same as or sufficiently similar to an emission pattern that may be used during substrate patterning, so that the inherent stability and / or controlled stability of the radiation source is tested and / or stressed in substantially the same manner as during substrate patterning.

[0083] However, due to practical and commercial constraints, it may not be possible or permitted to use emission pattern data that directly or indirectly includes proprietary information for such testing. In particular, for the purpose of evaluating the performance of the radiation source SO, it may not be possible or permitted to transmit the emission pattern data to an entity remote from the production environment, such as to a remote server, due to the proprietary nature of the emission pattern data.

[0084] Furthermore, in a production environment, a radiation source SO may be in use continuously or intermittently for extended periods of time (such as weeks or months) between service intervals. Due to the length of time required to complete such testing, it is often impractical to collect emission pattern data over such extended periods of time and then use the same emission pattern data to test the radiation source.

[0085] refer to Figure 3 , a method of generating a test for a radiation source for a lithographic apparatus 210 is shown. Figure 3 A radiation source 200 is shown. The radiation source 200 can be, for example, an EUV or DUV radiation source. The radiation source 200 provides radiation 205 in the form of a beam to a lithographic apparatus 210. The lithographic apparatus 210 can be a scanner. The lithographic apparatus 210 is configured to pattern a substrate using the radiation 205 from the radiation source 200. The lithographic apparatus 210 can be configured to produce a substrate 275 patterned directly or indirectly by the radiation source.

[0086] Radiation 205 is typically provided as a plurality of emission patterns. Radiation 205 may be provided as one or more emission patterns comprising, for example, a burst sequence having predetermined and / or controlled characteristics, such as Figure 2 exemplified in .

[0087] The lithographic apparatus 210 provides at least one control signal 215 to the radiation source 200. The control signal can include data corresponding to, for example, a desired radiation dose used by the lithographic apparatus 210 to pattern a substrate. As such, the control signal 215 can be used by the radiation source 200 to directly or indirectly control and / or define the emission pattern(s) of the radiation 205 emitted by the radiation source 210. In other embodiments, and / or in other operating modes of this embodiment, the emission pattern can be provided to the radiation source 200 by the lithographic apparatus 210. That is, rather than the radiation source 200 using the control signal 215 from the lithographic apparatus 210 to determine and / or calculate an appropriate emission pattern, the emission pattern (or information directly related to the emission pattern) can be provided to the radiation source 200 by the lithographic apparatus 210. This emission pattern (or information directly related to the emission pattern) can be calculated, determined, or otherwise derived by the lithographic apparatus 210, for example, by a processor within the lithographic apparatus 210.

[0088] In a preferred embodiment, the method includes using a data collection module 220. The data collection module 220 can collect data 225 from the radiation source 200. The data 225 can correspond to the emission pattern(s) of the radiation 205 emitted by the radiation source 200. The data collection module 220 can be communicatively coupled to or can be configured to be communicatively coupled to the radiation source 210. The data collection module 220 can be integrated into the radiation source or the lithographic apparatus 210.

[0089] The data collection module 220 is configured to provide data 235 to the data storage device 230. The data 235 provided to the data storage device 230 corresponds to and / or is derived from the data 225 collected by the data collection module.

[0090] The data 235 provided to the data storage device 230 may have the same or a different format than the data 225 collected by the data collection module 220. Furthermore, in other embodiments within the scope of the present invention, the radiation source 200 may be configured or adapted to provide the data 225 corresponding to the emission pattern(s) of the radiation 205 emitted by the radiation source 200 directly to the data storage device 230.

[0091] The data storage device 230 can be located in the same production environment as the lithographic apparatus 210. In this way, all steps of the method are performed in situ within the semiconductor manufacturing apparatus. Advantageously, in this way, no private data is required to leave the semiconductor manufacturing apparatus during the generation of a method for testing the radiation source 200.

[0092] In a preferred embodiment, the data storage device 230 is or includes a server. The data storage device 230 is configured to receive the data 225 from the data collection module 220 and transmit the data 245 to the data processor 240.

[0093] The data 245 transmitted to the data processor 240 corresponds to the data 225 provided to the data storage device 230. The data 245 transmitted to the data processor 240 may have the same or a different format than the data 225 provided to the data storage device 230. In other embodiments, the data collection module 220 may be configured to provide or transmit data directly to the data processor 240. In further embodiments, the radiation source may be configured to provide or transmit data directly to the data processor 240.

[0094] The data 245 transferred from the data storage device 230 to the data processor 240 may be transferred upon request from the data processor 240 to the data storage device 230. The data storage device 230 may be configured to store data corresponding to a shot pattern(s) used to pattern one or more substrates. In a preferred embodiment, the data storage device 230 is configured to store data corresponding to all or substantially all of the shot patterns of the radiation source that occur between service intervals of the radiation source 200 and / or service intervals of the lithographic apparatus 210. Thus, in a preferred embodiment, the data storage device 230 may be configured to store data corresponding to all of the shot patterns of the radiation source 200 that occur over a period that typically spans several weeks (typically several months).

[0095] In a preferred embodiment, data processor 240 is a software product, such as a computer program. It should be understood that in other embodiments falling within the scope of the present invention, data processor 240 may be a data processing device, such as a hardware module. Furthermore, data processor 240 may be implemented on data storage device 230. In yet another embodiment, data processor 240 may be provided within radiation source 200 itself or within a computer program product present on radiation source 200 itself. In yet another embodiment, data processor 240 may be implemented on a separate computer, such as a portable computer, such as a service engineer's laptop computer. In yet another embodiment, data processor 240 may be implemented in lithographic apparatus 210.

[0096] Data processor 240 is configured to analyze data 245 to determine parameters for configuring one or more additional emission patterns for testing radiation source 200. Specifically, data processor 240 is configured to determine parameters such that the stability of radiation source 200 when executing the one or more additional emission patterns configured using these parameters is substantially the same as, or within predetermined limits relative to, the stability of radiation source 200 when executing the plurality of emission patterns. Furthermore, the total duration of the one or more additional emission patterns when executed by radiation source 200 is less than the duration of the plurality of emission patterns when executed by radiation source 200. Preferably, the total duration of the one or more additional emission patterns when executed by radiation source 200 is substantially less than the duration of the plurality of emission patterns when executed by radiation source 200. For example, the total duration of the one or more additional emission patterns when executed by radiation source 200 may be in the range of minutes or hours. This is in contrast to the duration of the original emission pattern on which data 245 is based, which may have a total duration in the range of weeks or even months. The stability of radiation source 200 is inherent stability and / or actively controlled stability.

[0097] In a preferred embodiment, data processor 240 generates a script or software program that uses the determined parameters to generate data corresponding to the one or more additional emission patterns. In one embodiment, data processor 240 can be configured to use the determined parameters to generate a program that, in turn, can generate data corresponding to the one or more additional emission patterns for testing radiation source 200. In another embodiment, data processor 240 can be configured to provide the determined parameters to another computer, such as a service engineer's laptop. In such an embodiment, the other computer can include software adapted to generate data corresponding to the one or more additional emission patterns based on the received parameters. In yet another embodiment, data processor 240 can be configured to use the determined parameters to directly or indirectly control radiation source 200 to generate one or more additional emission patterns for testing radiation source 200. That is, the described method includes the step of configuring a program for a computer for controlling the radiation source using the parameters.

[0098] In a preferred embodiment, data processor 240 can be configured to generate a script 250 or software program that uses the determined parameters to generate data corresponding to the one or more additional shot patterns and provide script 250 to an additional processor 255, such as a laptop computer, such as a laptop computer of a field service engineer. In yet another embodiment, data processor 240 is a software program installed on additional processor 255, wherein additional processor 255 can be configured to retrieve data 245 directly from data storage device 230.

[0099] Thus, it should be understood that data processor 240 can be a software program installed on a dedicated computer, data storage device 230, or another processor 255 (such as a service engineer's laptop computer). Additionally, data processor 240 can be a software program installed on radiation source 200 (e.g., installed and / or located within a computer and / or processor and / or memory of radiation source 200).

[0100] The determined parameters include at least one of the following: the number of patterns; the number and / or characteristics of unique or substantially unique patterns; the frequency of the patterns; the number of bursts per pattern; the number of pulses per burst; duty cycle information; frequency and / or amplitude or phase modulation information; timestamp; radiation source identification information; beam energy profile for each pattern; beam wavelength distribution for each pattern; beam bandwidth profile for each pattern.

[0101] In a preferred embodiment, wherein the further processor 255 may be configured to execute the script 250, the further processor 255 is adapted to be coupled to the radiation source 200 so as to control or configure the radiation source 200 to generate one or more further emission patterns.

[0102] Preferably, the further processor 255 is coupled to the radiation source during service intervals of the radiation source 200 or the lithographic apparatus 210. As such, the further processor 255 can be configured to test the radiation source 200 when the radiation source 200 is not being used for production purposes. That is, to test the radiation source 200 when the lithographic apparatus 210 is in an offline configuration.

[0103] Preferably, the further processor 255 can be configured to test the radiation source 200 at any time (e.g., not only during a service interval of the radiation source 200 and / or a service interval of the lithographic apparatus 210). That is, the further processor 255 can be coupled to the radiation source 200 at any time. Subsequently, the lithographic apparatus 210 may need to be taken offline in order to test the radiation source 200.

[0104] The further processor 255 provides data 260 corresponding to the one or more further emission patterns to the radiation source 200. Alternatively or additionally, the further processor 255 provides the radiation source 200 with a script or executable program corresponding to the one or more further emission patterns.

[0105] The further processor 255 is adapted to receive data 265 from the radiation source 200. The data 265 provides information about the test results. For example, the data 265 may indicate the stability and / or accuracy of the radiation source.

[0106] As such, further processor 255 may be configured to test radiation source 200 and receive data 265 , which may correspond to or indicate a level of accuracy and / or reliability and / or stability of radiation source 210 , such as the degree of success or failure of the test.

[0107] The further processor 255 may be configured to provide data 270 corresponding to the level of accuracy and / or reliability and / or stability of the radiation source 210 , which data 270 may be in the form of a report, for example.

[0108] The above-described method can be implemented in a system for generating tests for a radiation source for a lithographic apparatus. For example, a system can be provided that includes a data storage device 230 configured to store data corresponding to a plurality of emission patterns of a radiation source 200. The system can include a processor, such as the data processor 240 described above. The processor can be communicatively coupled to the data storage device 230 and configured to analyze the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source. These parameters are determined such that the stability of the radiation source 200 when executing the one or more additional emission patterns configured using these parameters is substantially the same as, or within predetermined limits relative to, the stability of the radiation source 200 when executing the plurality of emission patterns, and the total duration of the one or more additional emission patterns when executed by the radiation source 200 is less than the duration of the plurality of emission patterns when executed by the radiation source.

[0109] As described above, data processor 240 is configured to analyze data 245 to determine one or more parameters for configuring one or more additional emission patterns for testing radiation source 200. For purposes of example, reference will now be made to Figure 4 、 Figure 5 and Figure 6 The analysis of the data and the determination of some of the parameters are described.

[0110] Figure 4Another example of data representing the emission patterns of a radiation source for three substrates is provided. The data is artificial data that can be similar to production data, i.e., data obtained from patterned substrates produced in a semiconductor manufacturing facility using a radiation source. The graph is similar to Figure 2 That is, a first graph 300 shows the number of pulses in each burst of a shot pattern for each of the three substrates, a second graph 310 shows the repetition rate of the pulses in each burst of the shot pattern, and a third graph 320 shows the burst interval for each burst of each shot pattern.

[0111] from Figure 4 As can be seen in the graph, the variation between the shot pattern data for each substrate is very small. That is, the second graph 310 and the third graph 320 show nearly identical data for the three substrates. With respect to the first graph 300, the difference in the number of pulses per burst for each substrate is generally constant at approximately 50 pulses per burst.

[0112] Since there are only minor differences between the emission pattern data for each of the three substrates, the three emission patterns can be considered to be substantially the same from the perspective of generating one or more additional emission patterns for testing the radiation source. That is, since there are only minor differences between the emission pattern data for each of the three substrates, each of the emission patterns can be considered to have substantially the same impact on the inherent stability and / or actively controlled stability of the radiation source. Figure 4 A single emission pattern or 'unique emission pattern' may be identified that affects the intrinsic stability and / or actively controlled stability of the radiation source in substantially the same way for each of the three emission patterns.

[0113] Thresholds may be defined that limit the differences between emission patterns that are considered to have substantially the same effect on the inherent stability and / or actively controlled stability of the radiation source. For example, in one embodiment of the present invention, emission patterns that differ from each other by less than a defined and / or predetermined amount of pulses per burst may be considered to have substantially the same effect on the inherent stability and / or actively controlled stability of the radiation source, and may therefore be represented by a 'unique emission pattern'.

[0114] Other thresholds related to other parameters, such as the burst repetition rate and / or the difference between burst intervals, may additionally or alternatively be defined. That is, different emission patterns exhibiting a burst repetition rate and / or a difference between burst intervals below a defined threshold may be considered to have substantially the same impact on the intrinsic stability and / or actively controlled stability of the radiation source and may therefore be represented by a single 'unique emission pattern'.

[0115] Such a threshold value may be defined, estimated, or calculated based on, for example, known or measured characteristics of the radiation source, such as the type and / or configuration of the radiation source, experimental data, etc. Furthermore, such a threshold value may be defined, estimated, calculated, or otherwise determined based on subject matter expertise.

[0116] Thus, identification of unique emission patterns is effectively a classification of the emission patterns into groups or bins based on defined thresholds that limit the deviation between emission patterns within any given group or bin.

[0117] This is Figure 5 , where a first graph 400 shows an example of the number of pulses per burst for a shot pattern. The shot pattern exhibits a number of pulses per burst ranging from approximately 300 pulses per burst to approximately 500 pulses per burst.

[0118] By way of example only, thresholds corresponding to groups or bins of 150 pulses per burst are defined. That is, the first bin corresponds to 0 to 149 pulses per burst. The second bin corresponds to 150 to 299 pulses per burst. The third bin corresponds to 300 to 449 pulses per burst. The fourth bin corresponds to 450 to 599 pulses per burst.

[0119] Each burst of the transmit pattern falls into one of the defined groups or bins. Figure 5 , wherein each of the bursts shown in the first graph 410 is categorized into bins or groups. For example, the tenth burst, having approximately 520 pulses per burst, corresponds to the fourth bin or group, and the twentieth burst, having approximately 280 pulses per burst, corresponds to the second bin or group. Thus, emission pattern data corresponding to a wide range of pulses per burst can be represented by a relatively small number of bins or groups.

[0120] The inherent stability and / or actively controlled stability of a radiation source can be affected by changes in the emission pattern. However, an emission pattern, or portion of an emission pattern, that is relatively constant or varies within acceptable limits can be considered to have a limited effect on the inherent stability and / or actively controlled stability of the radiation source. That is, the output of the radiation source can be considered sufficiently stable after a certain number of consecutive pulses with approximately the same characteristics. Therefore, when testing a radiation source by generating an emission pattern that affects the inherent stability and / or actively controlled stability of the radiation source to the same extent as the emission pattern used during production, it is sufficient to focus only or primarily on changes in the emission pattern.

[0121] Reference again Figure 5In the first graph 400, it can be seen that each burst in the burst sequence extending from the thirty-sixth burst to the one hundred and fiftieth burst has approximately 520 pulses per burst. That is, the number of pulses for each burst of the sequence is constant. Figure 5 In the second graph 410 , it can be seen that the sequence can be represented or approximated as 10 bursts in bin 4 .

[0122] That is, in Figure 5 In the example shown in the second graph 410 of FIG, any burst sequence of 10 or more repeating bursts is limited and, therefore, effectively compressed to a maximum of 10 bursts. The threshold of 10 is provided for example purposes only and may be varied or selected based on various factors, such as the conditions under which the radiation source is operating, the type of radiation source, the configuration of the radiation source, and / or the age of the radiation source.

[0123] By way of another non-limiting example, from the perspective of its effect on the inherent stability and / or actively controlled stability of the radiation source, a first emission pattern comprising 11 bursts (each operating at 300 pulses) can be considered to be the same as a second pattern comprising 14 bursts (each operating at 290 pulses). Thus, a single 'unique emission pattern' can be generated that has the same effect on the inherent stability and / or actively controlled stability of the radiation source as the first and second emission patterns.

[0124] Thus, by compressing the burst sequence based on a sequence of repetitive identical or similar burst patterns, and / or by grouping or binning emission patterns or portions of emission patterns based on patterns having substantially the same impact on the intrinsic stability and / or actively controlled stability of the radiation source, characteristic data may be generated, such as Figure 5 This characteristic data may be considered as 'characteristics of the emission pattern data'. The characteristic data or characteristics correspond to or include parameters that may subsequently be used to configure one or more additional emission patterns for the test radiation source.

[0125] Figure 6 An example of characteristic data or "signatures" generated by multiple shot patterns in a semiconductor manufacturing environment is shown. Figure 6 In the exemplary data of FIG, data 510 corresponds to patterns for a total of 1108 substrates out of 22429 substrates. The data 510 is shown as a data envelope, where the envelope corresponds to 1108 individual shot patterns, all of which fall within the shown envelope.

[0126] exist Figure 6In the example shown in FIG5 , any burst sequence of 10 or more repeating bursts has been constrained and, therefore, effectively compressed to a maximum of 10 bursts. That is, data 510 has a maximum of 10 consecutive bursts where the pulses of each beat of the burst fall within defined groups or bins. Groups or bins have been defined to range from approximately 150 pulses per burst to approximately 300 pulses per burst. Additional groups or bins have been defined to range from approximately 300 pulses per burst to approximately 450 pulses per burst. As can be seen, the shot pattern data from the shot patterns for 1,108 of the 22,429 wafers fall within two defined groups or bins.

[0127] Thus, characteristic data or 'signatures' 520 correspond to or include data and / or parameters that can subsequently be used to configure one or more additional emission patterns for testing the radiation source, wherein the stability of the radiation source when executing the one or more additional emission patterns configured using the parameters is substantially the same as, or within predetermined limits relative to, the stability of the radiation source when executing the plurality of emission patterns, and the total duration of the one or more additional emission patterns when executed by the radiation source is less than the duration of the plurality of emission patterns when executed by the radiation source. These parameters may, for example, relate to or correspond to the number and configuration of groups or bins, and / or the frequency and duration at which each emission pattern falls within a defined group or bin. In further embodiments, these parameters may, for example, relate to or correspond to at least one of the following: the number of patterns; the number of unique patterns; the characteristics of the unique patterns; the frequency of the patterns; the number of bursts per pattern; the number of pulses per burst; duty cycle information; frequency and / or amplitude and / or phase modulation information; a timestamp; radiation source identification information; a beam energy profile for each pattern; a beam wavelength profile for each pattern; or a beam bandwidth profile for each pattern. In addition, these parameters can be determined based on at least one of the following: the number of recurring identical emission patterns; the number of emission patterns having characteristics within a predetermined threshold; the number of repeated identical or similar emission patterns; the repetition frequency of repeated identical or similar emission patterns or sequences; induced changes in the wavelength, bandwidth and / or energy of the radiation; and induced changes in the temperature of the radiation source.

[0128] The predetermined limits correspond to defined deviations from a target temperature of the radiation source, and / or a target wavelength and / or bandwidth and / or energy of radiation from the radiation source. That is, when performed by the radiation source under test, the one or more additional emission patterns result in an output from the radiation source having a wavelength and / or bandwidth and / or energy that is the same as, or within defined thresholds or limits relative to, the wavelength and / or bandwidth and / or energy of the plurality of emission patterns, and / or a temperature of the radiation source that is the same as, or within defined thresholds or limits relative to, the temperature of the radiation source when performing the plurality of emission patterns.

[0129] Figure 7 is a diagram showing a number of features that have been identified for different radiation sources (e.g., previously referenced Figure 6 For example, radiation source 1 has been in use for 9 days. During this 9-day period, the radiation source has been used to pattern 22,000 substrates. As can be seen, 30 unique shot patterns have been used to pattern 90% of the 22,000 substrates.

[0130] By analyzing the emission pattern data used, as in the above reference Figure 5 and Figure 6 As described, it can be seen that an emission pattern based on only 19 characteristic parameters is sufficient to test radiation source 1 in a manner that will have substantially the same effect on the intrinsic stability and / or actively controlled stability of radiation source 1 as the original 30 unique emission patterns. This effect is Figure 7 The datasheet is described as "compressed".

[0131] In some cases, this effect can be more pronounced. For example, considering radiation source 5, it can be seen that over a 10-day period, radiation source 5 has been used to pattern 49,000 substrates. It can be seen that 16,773 unique emission patterns have been used to pattern 90% of the 49,000 substrates.

[0132] By analyzing the emission pattern data used, as in the above reference Figure 5 and Figure 6 As described, it can be seen that an emission pattern based on parameters of only 17 characteristics is sufficient to test radiation source number 5 in a manner that will have substantially the same impact on the intrinsic stability and / or actively controlled stability of radiation source 1 as 90% of the original 16,773 unique emission patterns.

[0133] That is, data processor 240 can be configured to analyze the data corresponding to the 16,773 unique shot patterns to determine parameters defining the 17 characteristics, and accordingly use these parameters, as described above, to directly or indirectly define one or more additional shot patterns for testing radiation source 200, such that the stability of radiation source 200 when executing the one or more additional shot patterns configured using the parameters is substantially the same as, or within predetermined limits relative to, the stability of radiation source 200 when executing the plurality of shot patterns. Furthermore, the total duration of the one or more additional shot patterns when executed by radiation source 200 will be less than the duration of the plurality of shot patterns when executed by radiation source 200.

[0134] Although specific reference may be made herein to the use of lithographic apparatus in IC manufacturing, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include the manufacture of guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, integrated optical systems, and the like.

[0135] Although specific reference may be made herein to embodiments of the present invention in the context of lithographic equipment, embodiments of the present invention may be used in other equipment. Embodiments of the present invention may form part of mask inspection equipment, metrology equipment, or any equipment that measures or processes objects such as wafers (or other substrates) or masks (or other patterning devices). These equipment are generally referred to as lithographic tools. Such lithographic tools may use vacuum conditions or ambient (non-vacuum) conditions.

[0136] Although specific reference has been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention is not limited to optical lithography and may be used in other applications, such as imprint lithography, where the context permits.

[0137] Where the context permits, embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented as instructions stored on a machine-readable medium that can be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), etc. In addition, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be understood that such descriptions are merely for convenience, and that such actions are actually produced by a computing device, processor, controller, or other device that executes the firmware, software, routines, instructions, etc., and in doing so, may cause an actuator or other device to interact with the physical world.

[0138] Further aspects of the invention are set out in the following numbered clauses.

[0139] 1. A method of generating a test for a radiation source for use in a lithographic apparatus, the method comprising the steps of:

[0140] receiving data corresponding to a plurality of emission patterns from a radiation source; and

[0141] analyzing the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source;

[0142] wherein the parameters are determined so that the stability of the radiation source when executing one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns,

[0143] And the total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source.

[0144] 2. The method according to clause 1, wherein the stability of the radiation source is intrinsic stability.

[0145] 3. The method according to clause 1, wherein the stability of the radiation source is an actively controlled stability.

[0146] 4. The method according to clause 1, wherein the stability of the radiation source is at least one of: wavelength stability; bandwidth stability; energy stability; temperature stability.

[0147] 5. The method of clause 1, wherein the predetermined limit corresponds to a defined deviation from at least one of a target temperature of the radiation source, and / or a target wavelength and / or bandwidth and / or energy of radiation from the radiation source.

[0148] 6. A method according to claim 1, wherein the parameters include at least one of the following: number of patterns; number of unique patterns; characteristics of unique patterns; frequency of the patterns; number of bursts per pattern; number of pulses per burst; duty cycle information; frequency and / or amplitude and / or phase modulation information; timestamp; radiation source identification information; beam energy profile of each pattern; beam wavelength profile of each pattern; beam bandwidth profile of each pattern.

[0149] 7. The method of clause 1, wherein the parameter is determined based on at least one of:

[0150] The number of recurring identical emission patterns; the number of emission patterns having characteristics within a predetermined threshold; the number of repeated identical or similar emission patterns; the frequency of repetition of repeated identical or similar emission patterns or sequences; the induced changes in the wavelength, bandwidth and / or energy of the radiation; the induced changes in the temperature of the radiation source.

[0151] 8. The method of clause 1, further comprising the step of configuring a computer program to control the radiation source using the parameters.

[0152] 9. The method according to clause 1, further comprising the step of controlling the radiation source to perform one or more further emission patterns.

[0153] 10. The method of clause 9, wherein the radiation source is tested while the lithographic apparatus is in an offline configuration.

[0154] 11. A method according to clause 1, wherein data corresponding to a plurality of shot patterns of the radiation source is generated while the radiation source is under control of the lithographic apparatus.

[0155] 12. The method of clause 1, wherein all steps of the method are performed in-situ within a semiconductor manufacturing facility.

[0156] 13. A computer-readable non-transitory medium having instructions stored thereon, the instructions, when executed by a computer, causing the computer to perform a method for generating a test for a radiation source for use with a lithographic apparatus, the method comprising the steps of:

[0157] receiving data corresponding to a plurality of emission patterns from a radiation source; and

[0158] analyzing the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source;

[0159] wherein the parameters are determined so that the stability of the radiation source when executing one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, and

[0160] The total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source.

[0161] 14. A data processing device comprising a memory and a processor adapted to perform the steps of the method according to clause 1.

[0162] 15. A system for generating a test for a radiation source for use in a lithographic apparatus, the system comprising:

[0163] a data storage device configured to store data corresponding to a plurality of emission patterns of a radiation source; and

[0164] a processor communicatively coupled to the data storage device and configured to: analyze the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source;

[0165] wherein the parameters are determined so that the stability of the radiation source when executing one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns,

[0166] And the total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source.

[0167] 16. The system of clause 15, further comprising a radiation source, wherein the radiation source is a DUV radiation source.

[0168] 17. The system of clause 15, further comprising a lithographic apparatus, wherein the lithographic apparatus is configured to control the radiation source and generate data corresponding to the plurality of shot patterns.

[0169] 18. The system of clause 17, wherein the lithographic apparatus comprises a processor or is communicatively coupled to a processor such that the lithographic apparatus is configured to control the radiation source to perform the one or more second shot patterns.

[0170] 19. A method of generating a test for a radiation source for use in a lithographic apparatus, the method comprising:

[0171] receiving first data corresponding to one or more first emission patterns of a radiation source;

[0172] analyzing the first data to identify emission patterns and / or portions of emission patterns that affect stability of the radiation source within a predetermined range relative to other emission patterns and / or other portions of the emission pattern; and

[0173] Second data corresponding to one or more second emission patterns of the radiation source is generated, wherein the second data is based on the analysis of the first data.

[0174] 20. The method of clause 19, further comprising configuring the computer program using the second data to operate the radiation source using one or more second emission patterns.

[0175] 21. The method of clause 19, wherein analyzing the first data comprises binning the first data into discrete bins, wherein the discrete bins are defined by threshold values, and the stability of the radiation source varies within the threshold values ​​by less than a predetermined range.

[0176] 22. The method of clause 19, wherein analyzing the first data comprises identifying one or more consecutive portions of the emission pattern that affect stability of the radiation source within a predetermined range.

[0177] 23. The method of clause 19, wherein the one or more first emission patterns, when performed by the radiation source, span a first time period, and the one or more second emission patterns, when performed by the radiation source, span a second time period, and wherein the first time period is substantially greater than the second time period.

[0178] 24. The method according to clause 19, wherein the stability of the radiation source is inherent stability and / or actively controlled stability.

[0179] 25. The method of clause 19, wherein the stability of the radiation source is at least one of: wavelength stability; bandwidth stability; energy stability; temperature stability.

[0180] 26. The method according to clause 19, wherein the first data corresponds to a usage profile of the radiation source.

[0181] 27. A method according to clause 19, wherein the first data and / or the second data comprises characteristics of one or more emission patterns, wherein the characteristics comprise at least one of the following:

[0182] the number of emission patterns;

[0183] the number of unique emission patterns;

[0184] the frequency of one or more emission patterns;

[0185] the number of bursts per transmit pattern;

[0186] the number of pulses per burst;

[0187] Duty cycle information;

[0188] frequency and / or amplitude and / or phase modulation information;

[0189] One or more timestamps;

[0190] Radiation source identification information;

[0191] beam energy profile for each pattern;

[0192] the beam wavelength profile of each pattern;

[0193] Beamwidth profile for each pattern.

[0194] 28. A method comprising:

[0195] receiving an input emission pattern, wherein the input emission pattern comprises an emission pattern used by a lithographic light source during operation of the lithographic light source;

[0196] detecting recurring similar portions of an input emission pattern;

[0197] generating a configuration for one or more test shot patterns, wherein each of the test shot patterns represents a plurality of recurring similar portions of an input shot pattern; and

[0198] The configuration for the test shot pattern is stored in memory.

[0199] 29. A method according to clause 28, wherein:

[0200] The test emission pattern is an emission pattern for which the stability of the lithography light source when executing the test emission pattern is substantially the same as, or within predetermined limits relative to, the stability of the lithography light source when executing a similarly recurring portion of the input emission pattern.

[0201] 30. The method according to clause 28, further comprising:

[0202] A test shot pattern is provided to the radiation source during a testing procedure for the radiation source.

[0203] Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in other ways than as described. The above description is intended to be illustrative and not limiting. Therefore, it will be apparent to those skilled in the art that modifications may be made to the described invention without departing from the scope of the claims set forth below.

Claims

1. A method of generating a test for a radiation source for use with a lithographic apparatus, the method comprising the steps of: receiving data corresponding to a plurality of emission patterns of the radiation source; as well as analyzing the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source; wherein the parameters are determined so that the stability of the radiation source when executing the one or more further emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, And the total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source. The method of claim 1 , wherein the stability of the radiation source is intrinsic stability. The method of claim 1 , wherein the stability of the radiation source is actively controlled stability.

4. The method according to claim 1, wherein the stability of the radiation source is at least one of the following: wavelength stability; bandwidth stability; energy stability; temperature stability.

5. The method of claim 1 , wherein the predetermined limit corresponds to a defined deviation from at least one of a target temperature of the radiation source, and / or a target wavelength and / or bandwidth and / or energy of radiation from the radiation source.

6. A method according to claim 1, wherein the parameters include at least one of the following items: the number of patterns; the number of unique patterns; the characteristics of the unique patterns; the frequency of the patterns; the number of bursts per pattern; the number of pulses per burst; duty cycle information; frequency and / or amplitude and / or phase modulation information; timestamp; radiation source identification information; beam energy profile of each pattern; beam wavelength profile of each pattern; beam bandwidth profile of each pattern.

7. The method of claim 1 , wherein the parameter is determined based on at least one of: The number of recurring identical emission patterns; the number of emission patterns having characteristics within a predetermined threshold; the number of repeated identical or similar emission patterns; the repetition frequency of repeated identical or similar emission patterns or sequences; the induced changes in the wavelength, bandwidth and / or energy of the radiation; the induced changes in the temperature of the radiation source.

8. The method according to claim 1, further comprising the steps of: A program for a computer is configured to control the radiation source using the parameters.

9. The method according to claim 1, further comprising the steps of: The radiation source is controlled to perform the one or more additional emission patterns.

10. The method of claim 9, wherein the radiation source is tested while the lithographic apparatus is in an offline configuration.

11. The method of claim 1 , wherein the data corresponding to the plurality of shot patterns of the radiation source is generated while the radiation source is under control of a lithographic apparatus.

12. The method of claim 1, wherein all steps of the method are performed in-situ within a semiconductor manufacturing facility.

13. A computer-readable non-transitory medium having instructions stored thereon, the instructions, when executed by a computer, causing the computer to perform a method of generating a test for a radiation source for use with a lithographic apparatus, the method comprising the steps of: receiving data corresponding to a plurality of emission patterns of the radiation source; as well as analyzing the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source; wherein the parameters are determined so that the stability of the radiation source when executing the one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, and The total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source.

14. A data processing device comprising a memory and a processor, the processor being adapted to perform the steps of the method according to claim 1.

15. A system for generating a test for a radiation source for use with a lithographic apparatus, the system comprising: a data storage device configured to store data corresponding to a plurality of emission patterns of the radiation source; as well as a processor communicatively coupled to the data storage device and configured to: analyze the data to determine parameters for configuring one or more additional emission patterns for testing the radiation source; wherein the parameters are determined so that the stability of the radiation source when executing the one or more additional emission patterns configured using the parameters is substantially the same as or within predetermined limits relative to the stability of the radiation source when executing the plurality of emission patterns, And the total duration of the one or more further emission patterns when performed by the radiation source will be less than the duration of the plurality of emission patterns when performed by the radiation source.

16. The system of claim 15, further comprising the radiation source, wherein the radiation source is a DUV radiation source.

17. The system of claim 15, further comprising the lithographic apparatus, wherein the lithographic apparatus is configured to control the radiation source and generate the data corresponding to the plurality of shot patterns.

18. The system of claim 17, wherein the lithographic apparatus comprises the processor or is communicatively coupled to the processor such that the lithographic apparatus is configured to control the radiation source to perform the one or more further shot patterns.

19. A method of generating a test for a radiation source for use in a lithographic apparatus, the method comprising: receiving first data corresponding to one or more first emission patterns of the radiation source; analyzing the first data to identify emission patterns and / or portions of emission patterns that affect stability of the radiation source within a predetermined range relative to other emission patterns and / or other portions of emission patterns; as well as Second data corresponding to one or more second emission patterns of the radiation source is generated, wherein the second data is based on the analysis of the first data.

20. The method according to claim 19, further comprising: A computer program is configured using the second data to operate the radiation source using the one or more second emission patterns.

21. The method of claim 19, wherein analyzing the first data comprises: The first data is binned into discrete bins, wherein the discrete bins are defined by a threshold value, and a variation of the stability of the radiation source within the threshold value is less than the predetermined range.

22. The method of claim 19, wherein analyzing the first data comprises: One or more consecutive portions of the emission pattern that affect stability of the radiation source within the predetermined range are identified.

23. The method of claim 19, wherein the one or more first emission patterns, when performed by the radiation source, span a first time period, and the one or more second emission patterns, when performed by the radiation source, span a second time period, and wherein the first time period is substantially greater than the second time period.

24. The method of claim 19, wherein the stability of the radiation source is inherent stability and / or actively controlled stability.

25. The method of claim 19, wherein the stability of the radiation source is at least one of: wavelength stability; bandwidth stability; energy stability; temperature stability.

26. The method of claim 19, wherein the first data corresponds to a usage profile of the radiation source.

27. The method of claim 19, wherein the first data and / or the second data comprises characteristics of one or more emission patterns, wherein the characteristics comprise at least one of the following: the number of emission patterns; the number of unique emission patterns; the frequency of one or more emission patterns; the number of bursts per transmit pattern; the number of pulses per burst; Duty cycle information; frequency and / or amplitude and / or phase modulation information; One or more timestamps; Radiation source identification information; beam energy profile for each pattern; the beam wavelength profile of each pattern; Beamwidth profile for each pattern.

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