Emissivity measuring device and method, semiconductor processing apparatus, and infrared temperature measuring method

Abstract

The application discloses an emissivity measuring device and method, a semiconductor processing device and an infrared temperature measuring method. The emissivity measuring device is used for measuring the emissivity of a measured piece. In the emissivity measuring device, a reflector support is used for supporting a first reflector and a second reflector, and the first reflector and the second reflector are opposite to the measured piece. A first infrared radiation energy meter is used for measuring the energy emitted by the measured piece and the energy emitted by the measured piece and reflected by the first reflector. A second infrared radiation energy meter is used for measuring the energy emitted by the measured piece and the energy emitted by the measured piece and reflected by the second reflector. The first infrared radiation energy meter and the second infrared radiation energy meter are connected with a calculation element. The calculation element is used for calculating the emissivity of the measured piece according to the measurement values of the first infrared radiation energy meter and the second infrared radiation energy meter. The application can solve the problem of inaccurate measurement of an infrared pyrometer with a fixed emissivity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of emissivity measuring equipment, in particular to an emissivity measuring device and method, a semiconductor processing equipment and an infrared temperature measuring method. BACKGROUND

[0002] In the semiconductor processing equipment, an infrared pyrometer is used for wafer temperature measurement. The infrared temperature measurement technology is based on Planck's law of black body radiation, in which emissivity is the ratio of the actual infrared energy emitted by an object to its theoretical value, and is a key parameter for infrared temperature measurement. The emissivity of the wafer and the wafer surface condition (such as polishing, roughness, oxidation, sandblasting, etc.), the surface geometry (such as plane, concave, convex, etc.), the surface physicochemical structure state (such as deposit, oxide film, oil film, etc.), the measurement temperature and the measurement angle are related. Under actual working conditions, the temperature and surface condition of the wafer are always changing, so the emissivity of the wafer is always changing. Using an infrared pyrometer with a fixed emissivity to measure the temperature of the wafer has errors, and the result is inaccurate. Of course, the same problem exists when using the infrared temperature measurement technology to measure the temperature of other measured objects. SUMMARY

[0003] The present application discloses an emissivity measuring device and method, a semiconductor processing equipment and an infrared temperature measuring method to solve the problem of errors in measuring the temperature of a measured object using an infrared pyrometer with a fixed emissivity, and the result is inaccurate.

[0004] To solve the above problems, the present application adopts the following technical solutions:

[0005] In a first aspect, the present application provides an emissivity measuring device for measuring the emissivity of a measured object, comprising a first reflecting element, a second reflecting element, a reflecting element support, a first infrared radiation energy meter, a second infrared radiation energy meter and a computing element.

[0006] The reflecting element support is used to support the first reflecting element and the second reflecting element, and the first reflecting element and the second reflecting element are opposite to the measured object.

[0007] The first infrared radiation energy meter is used to measure the energy emitted by the measured object and the energy emitted by the measured object after being reflected by the first reflecting element, and the second infrared radiation energy meter is used to measure the energy emitted by the measured object and the energy emitted by the measured object after being reflected by the second reflecting element.

[0008] The first infrared radiation energy meter and the second infrared radiation energy meter are connected to the computing element, and the computing element is used to calculate the emissivity of the measured object according to the measurement values of the first infrared radiation energy meter and the second infrared radiation energy meter.

[0009] In a second aspect, the embodiments of the present application provide a semiconductor processing equipment, comprising a process chamber and the emissivity measuring device, the process chamber comprises a susceptor assembly for carrying a wafer, and the emissivity measuring device is used for measuring the emissivity of the wafer; the first reflecting element, the second reflecting element, the reflecting element support, the probe of the first infrared radiation energy meter and the probe of the second infrared radiation energy meter are all arranged in the process chamber; and the first reflecting element, the second reflecting element, the probe of the first infrared radiation energy meter and the probe of the second infrared radiation energy meter are all arranged opposite to the back surface of the wafer.

[0010] In a third aspect, the embodiments of the present application provide an emissivity measuring method, applied to the emissivity measuring device, the method comprises:

[0011] obtaining the measurement value of the first infrared radiation energy meter;

[0012] obtaining the measurement value of the second infrared radiation energy meter;

[0013] calculating the emissivity of the measured object according to the measurement value of the first infrared radiation energy meter and the measurement value of the second infrared radiation energy meter.

[0014] In a fourth aspect, the embodiments of the present application provide an infrared temperature measuring method, applied to the emissivity measuring method, the infrared temperature measuring method comprises:

[0015] obtaining the emissivity ε of the measured object;

[0016] obtaining the infrared radiation energy W of the measured object;

[0017] obtaining the real-time temperature according to the emissivity ε and the infrared radiation energy W.

[0018] The technical solutions adopted by the present application can achieve the following beneficial effects:

[0019] The emissivity measuring device of the present application comprises a first reflecting element, a second reflecting element, a reflecting element support, a first infrared radiation energy meter, a second infrared radiation energy meter and a calculation element, the first infrared radiation energy meter can measure the energy emitted by the measured object and the energy emitted by the measured object after being reflected by the first reflecting element in real time, the second infrared radiation energy meter can measure the energy emitted by the measured object and the energy emitted by the measured object after being reflected by the second reflecting element in real time, and the calculation element can calculate the emissivity of the measured object in real time, so as to measure the temperature of the measured object in real time. The emissivity measuring device can measure the emissivity of the measured object in real time, and can accurately obtain the emissivity of the measured object under the current conditions regardless of the changes of the measured object itself and the environment, so that the accuracy of the emissivity measurement can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0020] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:

[0021] Figure 1 Fig. 1 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0022] Figure 2 Fig. 2 is a schematic view of a semiconductor processing apparatus according to another embodiment of the present application;

[0023] Figure 3 Fig. 3 is a schematic view of a first infrared radiation energy meter receiving energy emitted by a measured object and reflected by a first reflector according to an embodiment of the present application;

[0024] Figure 4 Fig. 4 is a schematic view of a second infrared radiation energy meter receiving energy emitted by a measured object and reflected by a second reflector according to an embodiment of the present application.

[0025] BRIEF DESCRIPTION OF DRAWINGS

[0026] 100 - process chamber,

[0027] 200 - susceptor assembly, 210 - susceptor, 220 - susceptor support assembly, 221 - stator, 222 - rotor,

[0028] 300 - first reflector, 400 - second reflector, 500 - reflector support, 600 - first infrared radiation energy meter, 700 - second infrared radiation energy meter,

[0029] 800 - measured object, 810 - wafer. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the present application clearer, the following will be a clear and complete description of the technical solutions of the present application in combination with the embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0031] The following will be a detailed description of the technical solutions disclosed by various embodiments of the present application in combination with the drawings.

[0032] As Figures 1 to 4As shown, the present embodiment provides an emissivity measuring device for measuring the emissivity of a measured piece 800, which includes a first reflector 300, a second reflector 400, a reflector support 500, a first infrared radiation energy meter 600, a second infrared radiation energy meter 700, and a computing element. Optionally, the emissivity measuring device can be applied to a semiconductor processing equipment, in which case the emissivity measuring device can be installed in a process chamber 100 of the semiconductor processing equipment for measuring the emissivity of a wafer 810 in the process chamber 100.

[0033] It should be noted that the wafer 810 is a specific measured structure of the measured piece 800, and in the case where the emissivity measuring device is applied to a semiconductor processing equipment, the measured piece 800 can be the wafer 810. Of course, in the case where the emissivity measuring device is applied to other equipment, the measured piece 800 can be other measured structures.

[0034] The reflector support 500 is used to support the first reflector 300 and the second reflector 400. The first reflector 300 and the second reflector 400 are structures with known reflectivity, and both the first reflector 300 and the second reflector 400 are opposite to the measured piece 800, and both the first reflector 300 and the second reflector 400 are arranged above the measured piece 800, or both the first reflector 300 and the second reflector 400 are arranged below the measured piece 800.

[0035] For the convenience of installation, both the first reflector 300 and the second reflector 400 can be arranged below the measured piece 800. In the case where both the first reflector 300 and the second reflector 400 are arranged below the measured piece 800 and the emissivity measuring device is applied to a semiconductor processing equipment, the reflector support 500 can be directly connected to the bottom of the process chamber 100 where the emissivity measuring device is located.

[0036] The first infrared radiation energy meter 600 is used to measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 is used to measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the second reflector 400. That is, the first infrared radiation energy meter 600 can receive the energy emitted by the measured piece 800 without reflection and the energy emitted by the measured piece 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can receive the energy emitted by the measured piece 800 without reflection and the energy emitted by the measured piece 800 and reflected by the second reflector 400. Moreover, both the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 are connected to the computing element, and the computing element is used to calculate the emissivity of the measured piece 800 according to the measurement values of the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700.

[0037] The computing element can be a separate structure or a part of the control device. For example, in the case that the emissivity measuring device is applied to a semiconductor processing equipment, the computing element can be a part of the control device of the semiconductor processing equipment, or the computing element can be a part of the temperature controller of the semiconductor processing equipment.

[0038] The emissivity measuring device of the embodiment of the present application can measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the first reflecting element 300 in real time through the first infrared radiation energy meter 600, can measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the second reflecting element 400 in real time through the second infrared radiation energy meter 700, and can calculate the emissivity of the measured piece 800 in real time through the computing element, so as to measure the temperature of the measured piece 800 in real time. The emissivity measuring device can measure the emissivity of the measured piece 800 in real time, and can accurately obtain the emissivity of the measured piece 800 under the current condition regardless of the change of the measured piece 800 itself and the environment thereof, so that the device can improve the accuracy of the emissivity measurement.

[0039] Optionally, the reference Figure 3 and Figure 4 The reflectivity of the measured piece 800 is r, the reflectivity of the first reflecting element 300 is r1, the reflectivity of the second reflecting element 400 is r2, the emissivity is ε, the infrared radiation energy is W, the energy measured by the first infrared radiation energy meter 600 is W1, and W1 satisfies the following relationship:

[0040]

[0041] The energy measured by the second infrared radiation energy meter 700 is W2, and W2 satisfies the following relationship:

[0042]

[0043] Therefore, the emissivity of the measured piece 800 can be obtained as The emissivity of the measured piece 800 can be calculated according to the formula.

[0044] In the embodiment, the probe of the first infrared radiation energy meter 600 is opposite to the measured member 800 through the first reflector 300, and the probe of the second infrared radiation energy meter 700 is opposite to the measured member 800 through the second reflector 400, so that the probe of the first infrared radiation energy meter 600 can more comprehensively receive the energy emitted by the measured member 800 and the energy emitted by the measured member 800 and reflected by the first reflector 300, and the probe of the second infrared radiation energy meter 700 can more comprehensively receive the energy emitted by the measured member 800 and the energy emitted by the measured member 800 and reflected by the second reflector 400.

[0045] Optionally, the distance from the probe of the first infrared radiation energy meter 600 to the center of the measured member 800 is equal to the distance from the probe of the second infrared radiation energy meter 700 to the center of the measured member 800. In this way, the distance from the position of the measured member 800 corresponding to the probe of the first infrared radiation energy meter 600 to the center of the measured member 800 is equal to the distance from the position of the measured member 800 corresponding to the probe of the second infrared radiation energy meter 700 to the center of the measured member 800, the environment of the measured member 800 at the positions is similar, and the surface state of the measured member 800 at the positions is similar, so that the measurement and calculation are more accurate.

[0046] In the optional embodiment, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are symmetrically arranged along the radial direction of the measured member 800. On the basis of ensuring that the distance from the probe of the first infrared radiation energy meter 600 to the center of the measured member 800 is equal to the distance from the probe of the second infrared radiation energy meter 700 to the center of the measured member 800, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are symmetrically arranged along the radial direction of the measured member 800, which is more convenient for positioning and installation of the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700, and the environment of the measured member 800 at the positions is more similar, so that the surface state of the measured member 800 at the positions is more similar, and the measurement and calculation are more accurate.

[0047] The first reflector 300 and the second reflector 400 can be independently installed. Alternatively, in the embodiment of the present application, the first reflector 300 is supported by the reflector support 500, and the second reflector 400 is embedded in the first reflector 300. The reflecting surface of the first reflector 300 and the reflecting surface of the second reflector 400 are in the same horizontal plane. The probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 in sequence and is opposite to the measured member 800. In this arrangement, the second reflector 400 can be embedded in the first reflector 300 first, then the first reflector 300 is installed to the reflector support 500, and then the reflector support 500 is installed to the installation base, so that the first reflector 300 and the second reflector 400 are installed to the process chamber 100. Therefore, this arrangement is more convenient for assembly, and the relative positions of the first reflector 300 and the second reflector 400 are more easily ensured.

[0048] In the case that the first reflector 300 is supported by the reflector support 500 and the second reflector 400 is embedded in the first reflector 300, the probe of the first infrared radiation energy meter 600 passes through the first reflector 300 and is opposite to the measured member 800. The probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 in sequence and is opposite to the measured member 800.

[0049] In the case that the first reflector 300 and the second reflector 400 are located below the measured member 800, the probe of the first infrared radiation energy meter 600 can pass through the first reflector 300 from bottom to top and be opposite to the measured member 800. The probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 in sequence from bottom to top and is opposite to the measured member 800. Therefore, the probe of the first infrared radiation energy meter 600 can more comprehensively receive the energy emitted by the measured member 800 and the energy emitted by the measured member 800 and reflected by the first reflector 300. At the same time, the probe of the second infrared radiation energy meter 700 can more comprehensively receive the energy emitted by the measured member 800 and the energy emitted by the measured member 800 and reflected by the second reflector 400.

[0050] In the embodiment of the present application, the emissivity of the second reflector 400 is 1. Alternatively, the second reflector 400 is a black body. For an opaque object, the emissivity + reflectivity = 1. If the emissivity of the second reflector 400 is 1, the reflectivity of the second reflector 400 is 0, and the energy reaching the second reflector 400 is fully absorbed. The energy received by the probe of the second infrared radiation energy meter 700 is the energy emitted by the measured member 800, and there is no energy reflected by the second reflector 400. At this time, the second infrared radiation energy meter 700 can select an infrared radiation energy meter with a smaller viewing angle (for reference Figure 2), further ensuring that the energy received by the second infrared radiation energy meter 700 is only the energy emitted by the measured piece 800, avoiding receiving the reflected energy in the peripheral environment.

[0051] Optionally, the second reflecting member 400 is a non-transparent silicon-based reflecting plate. Of course, the second reflecting member 400 can also be a reflecting member made of metal or other materials.

[0052] The embodiment of the present application also provides a semiconductor processing equipment, which comprises a process chamber 100 and an emissivity measurement device, the emissivity measurement device is the above-mentioned emissivity measurement device, the process chamber 100 is used for processing a wafer 810, the process chamber 100 comprises a susceptor assembly 200, the susceptor assembly 200 is used for carrying the wafer 810, and the emissivity measurement device is used for measuring the emissivity of the wafer 810. The first reflecting member 300, the second reflecting member 400, the reflecting member support 500, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are all arranged in the process chamber 100. Optionally, the first reflecting member 300, the second reflecting member 400, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are all arranged opposite to the back surface of the wafer 810, so as to measure the emissivity of the wafer 810 without affecting the processing operation on the front surface of the wafer 810.

[0053] The process chamber 100 is a main component of the semiconductor processing equipment, can provide a mounting basis for other structural members of the semiconductor processing equipment, and processes the wafer 810 in the process chamber 100.

[0054] Optionally, the susceptor assembly 200 comprises a susceptor 210 and a susceptor support assembly 220, wherein the susceptor 210 is used for carrying the wafer 810, and the susceptor support assembly 220 is used for supporting the susceptor 210, the susceptor support assembly 220 comprises a stator 221 and a rotor 222, the rotor 222 is arranged in the process chamber 100 and connected with the susceptor 210, the stator 221 is arranged outside the process chamber 100, and the stator 221 and the rotor 222 are coupled through magnetism to drive the susceptor 210 to rotate or lift, so as to drive the wafer 810 to rotate or lift. In this embodiment, the stator 221 and the rotor 222 can transmit force without contact, so that a through hole is not needed to be formed on the process chamber 100 for the transmission member to pass through, and therefore the sealing performance of the process chamber 100 is improved.

[0055] In order to facilitate installation, the reflecting member support 500 can be arranged in the process chamber 100, for example, the reflecting member support 500 can be fixedly installed on the process chamber 100, so as to support the first reflecting member 300 and the second reflecting member 400 on the process chamber 100, and the first reflecting member 300 and the second reflecting member 400 have a certain distance from the wafer 810.

[0056] For the convenience of installation, the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 can be arranged in the process chamber 100, for example, the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 can be fixedly installed on the process chamber 100, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 both extend into the process chamber 100, so as to realize the measurement of the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the first reflecting member 300, and the measurement of the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the second reflecting member 400.

[0057] The semiconductor processing equipment adopting the embodiment of the present application can realize real-time measurement of the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the first reflecting member 300 by the first infrared radiation energy meter 600, real-time measurement of the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the second reflecting member 400 by the second infrared radiation energy meter 700, and real-time calculation of the emissivity of the wafer 810 by the computing element, so as to realize real-time measurement of the temperature of the wafer 810. The emissivity measurement device can realize real-time measurement of the emissivity of the wafer 810, and can accurately obtain the emissivity of the wafer 810 under the current condition regardless of the change of the wafer 810 itself and the environment thereof, so as to improve the accuracy of the emissivity measurement and further improve the accuracy of the control of the processing process of the wafer 810.

[0058] The embodiment of the present application further provides an emissivity measurement method, which applies the above-described emissivity measurement device. The emissivity measurement method in the embodiment of the present application includes the following steps:

[0059] S110, obtaining the measurement value of the first infrared radiation energy meter 600;

[0060] S120, obtaining the measurement value of the second infrared radiation energy meter 700;

[0061] S130, calculating the emissivity of the measured member 800 according to the measurement value of the first infrared radiation energy meter 600 and the measurement value of the second infrared radiation energy meter 700.

[0062] In the emissivity measurement method in the embodiment of the present application, the emissivity of the measured member 800 can be calculated according to the formula ; wherein, ε is the emissivity of the measured member 800, W1 is the measurement value of the first infrared radiation energy meter 600, W2 is the measurement value of the second infrared radiation energy meter 700, r1 is the reflectivity of the first reflecting member 300, and r2 is the reflectivity of the second reflecting member 400.

[0063] Wherein, the reflectivity r1 of the first reflector 300 and the reflectivity r2 of the second reflector 400 are known, and W1 and W2 can be measured, thus, the emissivity of the measured object 800 can be calculated according to the formula The emissivity of the measured object 800 is calculated. Moreover, the energy W1 measured by the first infrared radiation energy meter 600 and the energy W2 measured by the second infrared radiation energy meter 700 can be measured in real time, thus, the real-time emissivity of the measured object 800 can be calculated.

[0064] In the embodiment of the present application, the emissivity of the second reflector 400 can be 1, and for a non-transparent object, the emissivity + reflectivity = 1. If the emissivity of the second reflector 400 is 1, the reflectivity r2 of the second reflector 400 is 0, thus, the emissivity of the measured object 800 can be calculated according to the formula

[0065] Thus, when calculating the emissivity of the measured object 800, the formula The emissivity of the measured object 800 is calculated.

[0066] In the embodiment of the present application, when calculating the emissivity of the measured object 800, the dependence on the reflectivity of the second reflector 400 is reduced, and the calculation formula is more simple.

[0067] By using the emissivity measurement method of the present application, the first infrared radiation energy meter 600 can measure the energy emitted by the measured object 800 and the energy emitted by the measured object 800 and reflected by the first reflector 300, the second infrared radiation energy meter 700 can measure the energy emitted by the measured object 800 and the energy emitted by the measured object 800 and reflected by the second reflector 400, and by obtaining the measurement value of the first infrared radiation energy meter 600 and obtaining the measurement value of the second infrared radiation energy meter 700, the emissivity of the measured object 800 can be calculated.

[0068] Moreover, the first infrared radiation energy meter 600 can measure the energy emitted by the measured object 800 and the energy emitted by the measured object 800 and reflected by the first reflector 300 in real time, the second infrared radiation energy meter 700 can measure the energy emitted by the measured object 800 and the energy emitted by the measured object 800 and reflected by the second reflector 400 in real time, and by obtaining the measurement value of the first infrared radiation energy meter 600 in real time and obtaining the measurement value of the second infrared radiation energy meter 700 in real time, the emissivity of the measured object 800 can be calculated in real time. No matter how the measured object 800 itself and the environment change, the emissivity of the measured object 800 under the current condition can be accurately obtained, thus, the accuracy of the emissivity measurement can be improved.

[0069] The embodiment of the present application also provides an infrared temperature measurement method, which applies the above-mentioned emissivity measurement method. The infrared temperature measurement method comprises the following steps:

[0070] S210, obtain the emissivity ε of the measured piece 800.

[0071] For example, the emissivity of the measured piece 800 can be calculated according to the measurement value of the first infrared radiation energy meter 600 and the measurement value of the second infrared radiation energy meter 700.

[0072] S220, obtain the infrared radiation energy W of the measured piece 800.

[0073] For example, the infrared radiation energy W can be measured by the infrared thermometer.

[0074] S230, obtain the real-time temperature according to the emissivity ε and the infrared radiation energy W.

[0075] In the method, the real-time temperature T of the measured piece 800, the emissivity ε of the measured piece 800, and the infrared radiation energy W of the measured piece 800 have a functional relationship, that is, T=f(ε,W). After obtaining the emissivity ε of the measured piece 800 and the infrared radiation energy W of the measured piece 800, the real-time temperature T of the measured piece 800 can be calculated.

[0076] In the infrared temperature measurement method, the first infrared radiation energy meter 600 can measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the first reflecting member 300 in real time, the second infrared radiation energy meter 700 can measure the energy emitted by the measured piece 800 and the energy emitted by the measured piece 800 and reflected by the second reflecting member 400 in real time, and the computing element can calculate the emissivity of the measured piece 800 in real time, so that the temperature of the measured piece 800 can be measured in real time, and then subsequent control operations can be implemented according to the temperature of the measured piece 800.

[0077] In the embodiment of the present application, the temperature of the wafer 810 is measured by the infrared thermometer in the semiconductor processing equipment, the energy measured by the first infrared radiation energy meter 600 is W1, the energy measured by the second infrared radiation energy meter 700 is W2, the emissivity ε of the wafer 810 can be calculated by the formula The calculated emissivity ε is set to the infrared thermometer, the infrared thermometer can output the measured real-time temperature T, the semiconductor processing equipment determines the power of the lamp tube of the semiconductor processing equipment based on the set temperature and the measured real-time temperature T, adjusts the power of the lamp tube of the semiconductor processing equipment according to the determined power of the lamp tube of the semiconductor processing equipment, and then the temperature of the wafer 810 changes, the emissivity ε of the wafer 810 changes accordingly, and the energy W1 measured by the first infrared radiation energy meter 600 and the energy W2 measured by the second infrared radiation energy meter 700 are continuously measured, and the emissivity ε of the wafer 810 is calculated by the formula The real-time emissivity of the wafer 810 is calculated, and the emissivity of the wafer 810 is obtained in real time through a loop, so that the temperature of the wafer 810 can be measured in real time, the measurement result is accurate, and the accuracy of controlling the processing of the wafer 810 can be improved.

[0078] The above embodiments of the present application mainly describe the differences between the various embodiments, and the different optimization features between the various embodiments can be combined to form a better embodiment as long as they are not contradictory. In view of the brevity and conciseness, the details are not described herein.

[0079] The above only describes the embodiments of the present application and is not intended to limit the present application. Various modifications and changes can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.

Claims

1. An emissivity measuring device for measuring the emissivity of a test piece (800), characterized in that, It includes a first reflector (300), a second reflector (400), a reflector support (500), a first infrared radiation energy meter (600), a second infrared radiation energy meter (700), and a computing element; The reflector support (500) is used to support the first reflector (300) and the second reflector (400), both of which are opposite to the test piece (800). The probe of the first infrared radiation energy meter (600) passes through the first reflector (300) and faces the device under test (800). The first infrared radiation energy meter (600) is used to measure the energy emitted by the device under test (800) and the energy emitted by the device under test (800) reflected by the first reflector (300). The probe of the second infrared radiation energy meter (700) passes through the second reflector (400) and faces the device under test (800). The second infrared radiation energy meter (700) is used to measure the energy emitted by the device under test (800) and the energy emitted by the device under test (800) reflected by the second reflector (400). The first infrared radiation energy meter (600) and the second infrared radiation energy meter (700) are both connected to the computing element, which is used to calculate the emissivity of the device under test (800) based on the measured values ​​of the first infrared radiation energy meter (600) and the second infrared radiation energy meter (700).

2. The emissivity measuring device according to claim 1, characterized in that, The distance from the probe of the first infrared radiation energy meter (600) to the center of the test object (800) is equal to the distance from the probe of the second infrared radiation energy meter (700) to the center of the test object (800).

3. The emissivity measuring device according to claim 2, characterized in that, The probes of the first infrared radiation energy meter (600) and the second infrared radiation energy meter (700) are arranged symmetrically along the radial direction of the measured object (800).

4. The emissivity measuring device according to claim 1, characterized in that, The first reflector (300) is supported on the reflector support (500), the second reflector (400) is embedded in the first reflector (300), and the reflective surface of the first reflector (300) and the reflective surface of the second reflector (400) are on the same horizontal plane; the probe of the second infrared radiation energy meter (700) passes through the first reflector (300) and the second reflector (400) in sequence and is opposite to the measured object (800).

5. The emissivity measuring device according to claim 4, characterized in that, The emissivity of the second reflector (400) is 1.

6. The emissivity measuring device according to claim 4, characterized in that, The second reflector (400) is a non-transparent silicon-based reflector.

7. A semiconductor processing apparatus, characterized in that, The device includes a process chamber (100) and an emissivity measuring device according to any one of claims 1-6. The process chamber (100) includes a base assembly (200) for supporting a wafer (810). The emissivity measuring device is used to measure the emissivity of the wafer (810). The first reflector (300), the second reflector (400), the reflector support (500), the probe of the first infrared radiation meter (600), and the probe of the second infrared radiation meter (700) are all disposed within the process chamber (100). The first reflector (300), the second reflector (400), the probe of the first infrared radiation meter (600), and the probe of the second infrared radiation meter (700) are all disposed opposite to the back surface of the wafer (810).

8. The semiconductor processing equipment according to claim 7, characterized in that, The base assembly (200) includes a base (210) and a base support assembly (220), wherein the base (210) is used to carry the wafer (810), and the base support assembly (220) is used to support the base (210). The base support assembly (220) includes a stator (221) and a rotor (222). The rotor (222) is disposed in the process chamber (100) and connected to the base (210). The stator (221) is disposed outside the process chamber (100). The stator (221) and the rotor (222) are magnetically coupled to drive the base (210) to rotate or move up and down.

9. A method for measuring emissivity, characterized in that, The method, applied to the emissivity measuring apparatus of any one of claims 1-6, comprises: Obtain the measurement value from the first infrared radiation energy meter (600); Acquire the measurement value from the second infrared radiation energy meter (700); The emissivity of the device under test (800) is calculated based on the measurements of the first infrared radiation energy meter (600) and the second infrared radiation energy meter (700).

10. The emissivity measurement method according to claim 9, characterized in that, The emissivity of the tested device (800) is calculated as follows: According to the formula Calculate the emissivity of the device under test (800); Wherein, ɛ is the emissivity of the tested component (800), W1 is the measured value of the first infrared radiation energy meter (600), W2 is the measured value of the second infrared radiation energy meter (700), r1 is the reflectivity of the first reflector (300), and r2 is the reflectivity of the second reflector (400).

11. The emissivity measurement method according to claim 10, characterized in that, The second reflector (400) is a reflector with an emissivity of 1. The emissivity of the tested device (800) is calculated as follows: According to the formula Calculate the emissivity of the device under test (800).

12. An infrared temperature measurement method, characterized in that, The emissivity measurement method according to any one of claims 9-11, wherein the infrared thermometry method comprises: Obtain the emissivity α of the device under test (800); Obtain the infrared radiation energy W of the test piece (800); The real-time temperature is obtained based on the emissivity ɛ and the infrared radiation energy W.

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