An electromagnetic information regulation device based on a storage memory material, a manufacturing process thereof and a control method thereof

Abstract

The application discloses an electromagnetic information regulation and control device based on a storage memory material and a manufacturing process and a control method thereof. The electromagnetic information regulation and control device based on the storage memory material comprises a dielectric substrate, a radio frequency switch assembly, an RIS unit and a radio frequency control chip. The radio frequency switch assembly comprises a storage memory material, metal wiring and an electrode. The electrode comprises a radio frequency electrode and a control electrode. The radio frequency electrode is directly connected with the storage memory material through the metal wiring, and the radio frequency electrode is also connected with an RIS unit lead position and a reactance element through a metal bonding wire. The output end of the control electrode is interconnected by using the metal wiring, and the metal wiring indirectly connects the storage memory material through an insulating layer. The device replaces the switch in the traditional diode or phase shifter with the material having the storage memory function, so that the electromagnetic information regulation and control device has the advantages of being light and thin, easy to install, energy-saving and environment-friendly, low in maintenance cost and convenient for large-scale popularization and use.

Description

TECHNICAL FIELD

[0001] The present application relates to an electromagnetic information regulation device based on a storage memory material, a manufacturing process thereof and a control method thereof, and belongs to the technical field of material science and electronic communication. BACKGROUND

[0002] With the rapid development of the Internet of Things, cloud computing, artificial intelligence and other fields brought by the popularization of 5G commercialization, the Internet data traffic is growing explosively, and higher and higher requirements are put forward for information transmission capacity and rate. According to the long-term mobile communication business demand in 2035, the communication network needs to support air, sky, land and sea integrated access, and the number of business access clients and data volume will increase significantly. The user experience rate that the future network can provide can reach 100Gbps, and the peak speed can exceed 1Tbps.

[0003] Wireless communication frequency band expands to millimeter wave terahertz, which can effectively improve data transmission bandwidth and reduce data transmission delay. However, one of the very serious problems brought by the expansion to high frequency band is the increase of power consumption of base station. According to the existing trend, according to the expert introduction of "2020 communication industry conference and the fifteenth communication technology annual meeting", after all base stations are upgraded to 5G by 2026, the power consumption will reach 2.1% of the total social power consumption, which is even higher than the power consumption level of data center (about 2%).

[0004] The current 5G mobile communication base station widely adopts MIMO (Multiple Input Multiple Output) beamforming antenna technology, which transmits electromagnetic waves to users in a directional manner to improve communication speed and reduce energy loss caused by invalid electromagnetic transmission. Even so, a large amount of signal energy is absorbed by obstacles such as walls and trees. Referring to Figure 1 The intelligent metasurface RIS (Reconfigurable Intelligent Surface) attached to the outer wall of the building can reflect or transmit electromagnetic waves of the corresponding frequency band, and can also control the direction of the reflected or transmitted beam through algorithm, effectively improving the signal quality of the base station signal shadow area.

[0005] RIS refers to a two-dimensional layered material composed of artificial materials with a size smaller than the working wavelength, which can realize flexible regulation and control of electromagnetic wave propagation direction, amplitude, phase, polarization mode and propagation mode. Referring to Figure 2 The RIS unit module is composed of a metal structure printed on a dielectric substrate and a diode for regulating the phase of electromagnetic waves. According to the working frequency band and the requirements of reflection and transmission functions, the shape of the metal structure can be changed, but generally RIS can be divided into two types: reflective and transmissive.

[0006] AsFigure 2 and Figure 3 As shown in the prior art RIS structure, active radio frequency switches or diode devices are combined with FPGA (Field Programmable Gate Array) for control, which not only leads to a large volume of RIS structure, but also makes it inconvenient to install and deploy on the building surface, and the manufacturing cost and power consumption are high, which is contrary to the original intention of energy saving and emission reduction. The above-mentioned shortcomings lead to the fact that RIS cannot be actually deployed on a large scale.

[0007] One important feature of the storage memory material (such as phase change material, ferroelectric material, etc.) is that after the change of its certain physical or chemical state, the subsequent state can still be maintained for a long time (such as the phase change material can maintain its phase state for 10 years) without power supply. Therefore, the radio frequency switch made of storage memory material has the advantage of long-term maintenance of its on-off state under the condition of no power supply. SUMMARY

[0008] In view of the shortcomings of the prior art, the present application provides an electromagnetic information regulation device based on storage memory material.

[0009] The present application also provides a manufacturing process of the above-mentioned electromagnetic information regulation device.

[0010] The present application also provides a method for adjusting and controlling electromagnetic beams by using the above-mentioned electromagnetic information regulation device.

[0011] The technical scheme of the present application is as follows:

[0012] An electromagnetic information regulation device based on storage memory material, comprising a dielectric substrate, a radio frequency switch assembly, a RIS unit and a radio frequency control chip;

[0013] The radio frequency switch assembly comprises storage memory material grown on a wafer substrate, metal wiring and electrodes; the electrodes comprise radio frequency electrodes and control electrodes; the output end of the radio frequency electrode is directly connected with the storage memory material through metal wiring, and the input end of the radio frequency electrode is connected with the lead position of the RIS unit and the reactance element through metal bonding wire; the output end of the control electrode is interconnected through metal wiring, and the input end of the control electrode is connected with the output port and ground of the radio frequency control chip; the control electrode receives the control pulse signal output by the radio frequency control chip, and generates heat on the metal wiring between the control electrodes to realize the control of the state conversion of the storage memory material. Here, the "ground" does not necessarily refer to the ground, but can also be the reference ground potential pin of the radio frequency control chip.

[0014] Preferably, the radio frequency control chip is a passive radio frequency chip, which uses energy coupling to obtain energy from wireless signals to generate control pulse signals.

[0015] Preferably, the radio frequency electrode is directly bonded to the corresponding lead position of the RIS unit using chip packaging technology, that is, the radio frequency electrode is no longer connected to the reactive element. This scheme does not use the reactive element and can also achieve the same electromagnetic information regulation effect: under the control of the radio frequency control chip, the on and off states of the radio frequency switch can cause a significant change in the phase of the reflected or transmitted electromagnetic wave by the RIS unit, for example, 180 degrees, 150 degrees, etc., thereby adjusting the direction of the reflected or transmitted electromagnetic wave to enhance the signal quality received at the location of the terminal device and improve the user experience of the terminal user.

[0016] Preferably, the antenna transceiver port of the radio frequency control chip is directly bonded to the corresponding lead position of the RIS unit, and the RIS unit can be used as the antenna of the radio frequency control chip to receive and transmit wireless signals for communication with the upper computer. The electromagnetic information regulation device with this structure can realize the regulation function of the reflection or transmission direction and amplitude of the electromagnetic wave beam.

[0017] Preferably, the storage memory material is phase change material GeTe.

[0018] A manufacturing process of the above-mentioned electromagnetic information regulation device:

[0019] 1) The wafer is sequentially cleaned with acetone, isopropyl alcohol, and deionized water, and is dried by nitrogen.

[0020] 2) The metal traces for controlling the storage memory material and the insulating layer for isolating the metal traces from the storage memory material are grown on the wafer by photolithography technology.

[0021] 3) The storage memory material is grown on the wafer by photolithography technology.

[0022] 4) The radio frequency electrode and the control electrode are made on the wafer by photolithography technology. The control electrode is connected to the metal traces in step 2) through a via hole, and the radio frequency electrode is directly connected to the storage memory material.

[0023] 5) The wafer is cut to obtain a radio frequency switch assembly using wafer cutting technology.

[0024] 6) The radio frequency switch assembly is pasted to the lead position of the RIS unit on the dielectric substrate using binding glue.

[0025] 7) The input end of the radio frequency electrode is bonded to the RIS unit and the reactive element respectively using chip packaging bonding technology; and the input end of the control electrode is bonded to the output port and ground of the radio frequency control chip.

[0026] 8) The radio frequency control chip and the radio frequency switch assembly are packaged on the surface of the dielectric substrate.

[0027] Preferably, the specific steps of the step 2) photolithography technology are:

[0028] Spin the photoresist on the wafer, and then expose the wafer coated with photoresist by electron beam to display the pattern to be made on the photoresist; remove the exposed photoresist, and then grow the metal material into the photoresist pattern; remove all photoresist, and then grow the insulating layer on the wafer;

[0029] The specific steps of the step 3) photolithography technology are:

[0030] Spin the photoresist on the wafer, and then expose the wafer coated with photoresist by electron beam to display the pattern to be made on the photoresist; remove the exposed photoresist, and then grow the storage memory material by magnetron sputtering or chemical vapor deposition; remove all photoresist.

[0031] The specific steps of the step 4) electrode making are:

[0032] Repeat the same process of gluing, exposing and removing glue as in 2) and 3), and then grow the metal tracks and electrodes on the wafer by evaporation or magnetron sputtering technology; remove all photoresist.

[0033] Preferably, the specific steps of the step 8) packaging are:

[0034] 8.1) Preheat the epoxy bonding glue at 50°C for 15 minutes;

[0035] 8.2) Apply the epoxy bonding glue to the surface of the radio frequency control chip, radio frequency switch assembly and metal bonding wire;

[0036] 8.3) Cure the medium substrate coated with epoxy bonding glue in a constant temperature oven at 120°C for 1 hour.

[0037] Preferably, the radio frequency switch assembly and the radio frequency control chip are integrated into one chip using the 3D packaging technology of microelectronics, and then the packaged chip is attached and soldered to the surface of the medium substrate and connected to the RIS unit.

[0038] A method for adjusting and controlling the electromagnetic wave beam by using the above electromagnetic information regulation device:

[0039] a) The host computer establishes a wireless communication connection with the radio frequency control chip through the radio frequency reader / writer, and when the base station signal power is insufficient to establish communication, a drone relay is used;

[0040] b) The signal transmitted by the wireless communication base station is reflected or transmitted by the RIS, and the signal power value A1 is received and recorded at the terminal device; at this time, the signal at the terminal includes the signal directly transmitted by the base station, the signal reflected by the RIS, and the mixed signal reflected or diffracted by other buildings and trees;

[0041] c) The host computer uses an intelligent optimization algorithm to calculate the on-off state required by the radio frequency switch component connected to the RIS unit, sends the calculation result to the radio frequency control chip, adjusts the on-off state of the radio frequency switch component, and records the signal power A2 at the terminal device. The intelligent optimization algorithm that can be used in this process includes ant colony algorithm, particle swarm optimization algorithm, bacterial colony optimization algorithm, frog leap algorithm, firework algorithm, etc. The invention preferably uses the firework algorithm. In this process, the radio frequency control unit can use the form of transmitting pulse signals to heat the metal wires connected to the control electrode, change the state of the storage memory material by controlling the duration of the pulse signal, and achieve the purpose of controlling the on-off of the radio frequency switch.

[0042] d) The host computer compares the signal power A2 and A1. If A2 has met the communication indicators, the optimization process is ended. Otherwise, according to the values of A2 and A1, the intelligent optimization algorithm is used to optimize the on-off state of the radio frequency switch component, and the control signal is sent through the radio frequency control chip to update the on-off state of the radio frequency switch component.

[0043] e) Repeat steps b) to d) until the signal power A2 received by the terminal device reaches the required indicators.

[0044] The beneficial effects of the present invention are:

[0045] The electromagnetic information regulation device based on storage memory material in the present invention uses microelectronic surface processing technology to manufacture materials with storage memory function on the surface of RIS, replacing the switches in traditional diodes or phase shifters, to realize the memory radio frequency switch function. Combined with radio frequency identity recognition or label positioning technology, the switch is controlled to open or close through wireless energy coupling, and the direction of the reflected or transmitted beam of RIS is regulated. Without subsequent power supply, RIS can keep its reflected or transmitted beam direction unchanged for a long time, which can be used to enhance the signal in the blind area of the base station to improve the user experience. It has the advantages of lighter, easier to install, energy saving and environmental protection, low maintenance cost, and easy to popularize and use on a large scale. BRIEF DESCRIPTION OF DRAWINGS

[0046] Figure 1 A schematic diagram of the scene for adjusting and controlling the electromagnetic beam using the electromagnetic information regulation device;

[0047] Figure 2 A structure schematic diagram of the prior art using active devices combined with FPGA to control RIS;

[0048] Figure 3 An enlarged view and equivalent circuit diagram of the RIS unit structure in the prior art;

[0049] Figure 4This is a schematic diagram of the unit structure of the electromagnetic information control device based on storage memory material described in Example 1;

[0050] Figure 5 This is a schematic diagram of the unit structure of the electromagnetic information control device based on storage memory material described in Example 2;

[0051] Figure 6 This is a schematic diagram of the radio frequency switch assembly before cutting according to the present invention;

[0052] Figure 7 Microscopic schematic diagram of phase transformation in phase change materials

[0053] Figure 8 Schematic diagram of phase transformation control in phase change materials

[0054] Figure 9 This is a schematic diagram of the manufacturing process of the radio frequency switch assembly described in this invention;

[0055] Figure 10 A flowchart of the control method for the RIS electromagnetic information control device provided by the present invention;

[0056] Explanation of reference numerals in the attached figures:

[0057] Reference Name Reference Name 10 Electromagnetic information regulating device unit 500 Radio frequency control chip 200 Dielectric substrate 601 First metal bonding wire 300 Radio frequency switch assembly 602 Second metal bonding wire 302 Wafer base 603 Third metal bonding wire 303 Storage memory material 604 Third metal bonding wire 3041 Radio frequency electrode 701 Metal material 3042 Control electrode 702 Insulating layer 400 RIS unit 703 Storage memory material Detailed Implementation

[0058] The following describes some embodiments of the present invention in detail with reference to the accompanying drawings.

[0059] Example 1

[0060] like Figure 4 As shown, an electromagnetic information control device based on storage memory material includes a dielectric substrate 200, a radio frequency switch assembly 300, a RIS unit 400, and a radio frequency control chip 500. In this embodiment, the radio frequency control chip is a semi-passive RFID chip EM4325. The dielectric substrate can be a rigid material PCB (Printed Circuit Board) substrate (made of fire-retardant materials such as Fr4 and Rogers and conductive metal copper or aluminum laminated together, with the main component of the fire-retardant material being glass-epoxy resin), or a flexible material substrate (including low-temperature co-fired ceramics (LTCC), film, ordinary paper, etc.). In this embodiment, an Fr4 PCB board is used.

[0061] The radio frequency switch assembly, such as Figure 6 As shown, the device includes a memory material 302, metal traces 303, and electrodes grown on a wafer substrate 301; the electrodes include a radio frequency (RF) electrode 3041 and a control electrode 3042; the RF electrode is directly connected to the memory material via the metal traces 303, and the input terminal of the RF electrode is connected via... Figure 4The first metal bonding wire 601 is connected to the RIS unit lead position, the second metal bonding wire 602 is connected to the reactance element; the output end of the control electrode is interconnected through the metal trace 303; the input end of the control electrode is connected to the output port of the radio frequency control chip through the fourth metal bonding wire 604, and the output end of the control electrode is grounded through the third metal bonding wire 603; the antenna transceiving port of the radio frequency control chip 500 is connected with an antenna.

[0062] The storage memory material in the embodiment is a phase change material GeTe. As shown in Figure 7 At room temperature, the microstructure of GeTe exists in two states of crystalline and amorphous. When the material is heated, as shown in Figure 8 Under different annealing conditions, the phase state of the phase change material can be converted between the crystalline state and the amorphous state. When GeTe is in the crystalline state, the bulk resistance is small, and the on function of the switch can be realized; when GeTe is in the amorphous state, the bulk resistance is large, and the off function of the switch can be realized. The present application makes the phase change material or ferroelectric material into a radio frequency switch assembly 300 with a passive memory function, instead of a traditional active diode or phase shifter, for electromagnetic information regulation and control of the RIS. And the RIS unit made by the scheme has the characteristics of fast regulation and control speed, low power consumption, and easy miniaturization installation, which is conducive to large-scale popularization.

[0063] The radio frequency chip control chip is a passive radio frequency chip, which uses energy coupling to obtain energy from wireless signals to generate control pulse signals. Energy coupling can use NFC (Near Field Communication) ISO 14443A, B or UHF RFID (Ultra High Frequency Radio Frequency Identification) ISO 180006C protocol.

[0064] Embodiment 2

[0065] As shown in Figure 5 .

[0066] The electromagnetic information regulation and control device based on the storage memory material as described in embodiment 1 is different in that the radio frequency electrode is directly bonded to the corresponding lead position of the RIS unit using chip packaging technology; and the antenna transceiving port of the radio frequency control chip is directly bonded to the corresponding lead position of the RIS unit.

[0067] Embodiment 3

[0068] A manufacturing process of the electromagnetic information regulation and control device as described in any one of embodiments 1-2: as shown in Figure 9 .

[0069] 1) The wafer is sequentially cleaned with acetone, isopropyl alcohol, deionized water, and dried with nitrogen;

[0070] 2) The metal trace 303 for controlling the storage memory material and the insulating layer 702 for isolating the metal trace from the storage memory material are grown on the wafer by photolithography technology;

[0071] 3) The storage memory material 703 is grown on the wafer by photolithography technology;

[0072] 4) The radio frequency electrode 3041 and the control electrode 3042 are made on the wafer by photolithography technology, the control electrode 3042 is connected to the metal trace 303 in step 2) through a via, and the radio frequency electrode 3041 is directly connected to the storage memory material 703;

[0073] 5) The wafer is cut to obtain the radio frequency switch assembly 300 using wafer cutting technology.

[0074] 6) The radio frequency switch assembly is pasted to the lead position of the RIS unit on the dielectric substrate using CF-820 binding glue.

[0075] 7) As Figure 4 , the radio frequency electrode input end is bonded to the RIS unit 400 through the first metal bonding wire 601 and to the reactive element through the second metal bonding wire 602 using chip packaging bonding technology; the input end of the control electrode is bonded to the output port of the radio frequency control chip through the fourth metal bonding wire 604, to the third metal bonding wire 603 and to the ground.

[0076] 8) The radio frequency control chip and the radio frequency switch assembly are packaged on the surface of the dielectric substrate.

[0077] Example 4

[0078] As described in Example 3, the manufacturing process of the electromagnetic information regulation device, further, the radio frequency switch assembly 300 and the radio frequency control chip 500 are integrated into a chip using microelectronic 3D packaging technology, and are packaged into a conventional chip and then attached to the surface of the dielectric substrate and connected to the RIS unit 400.

[0079] Example 5

[0080] Reference Figure 6 As described in Example 3, the manufacturing process of the electromagnetic information regulation device, further, the specific steps of the photolithography technology in step 2) are as follows:

[0081] Spin AZ5214 photoresist on the wafer, and then expose the wafer to electron beam to show the pattern to be made on the photoresist; remove the exposed photoresist, and then grow metal material 701 into the photoresist pattern; remove all photoresist, and then grow insulating layer 702 on the wafer; the growth technology can be magnetron sputtering, evaporation, laser pulse deposition, chemical vapor deposition, etc.; in this embodiment, evaporation is used to grow metal, magnetron sputtering is used to grow memory material, and chemical vapor deposition is used to grow insulating layer; the metal wire is tungsten, and the insulating layer is silicon nitride.

[0082] The specific steps of the step 3) photoetching technology are as follows:

[0083] Spin AZ5214 photoresist on the wafer, and then expose the wafer to electron beam to show the pattern to be made on the photoresist; remove the exposed photoresist, and then grow memory material 703 by magnetron sputtering or chemical vapor deposition; remove all photoresist; the wafer is a Si or SiO2 wafer, and in this embodiment, a SiO2 wafer is used.

[0084] The specific steps of the step 4) electrode making are as follows:

[0085] Repeat the same photoresist spinning, exposing, and removing process as in steps 2) and 3), and then grow metal wire 303 and electrodes 3041 and 3042 on the wafer by evaporation or magnetron sputtering technology; remove all photoresist; the metal bonding wire and electrodes can be made of aluminum or copper, and in this embodiment, copper is used.

[0086] Preferably, the specific steps of the step 8) packaging are as follows:

[0087] 8.1) Preheat the epoxy bonding glue at 50℃ for 15 minutes;

[0088] 8.2) Apply the epoxy bonding glue on the surface of the radio frequency control chip, the radio frequency switch assembly, and the metal bonding wire;

[0089] 8.3) Cure the medium substrate coated with the epoxy bonding glue in a thermostat at 120℃ for 1 hour.

[0090] The type of the epoxy bonding glue is 6311.

[0091] Embodiment 6

[0092] As shown in Figure 1 and Figure 10 .

[0093] A method for adjusting and controlling an electromagnetic wave beam by using the electromagnetic information regulation device according to any one of embodiments 1-2.

[0094] a) Step S100, the host computer establishes a wireless communication connection with the radio frequency control chip through the radio frequency reader and writer, and adopts a UAV relay when the base station signal power is insufficient to establish communication; Bluetooth, WiFi, Zigbee, etc. Wireless communication protocols can be used between the UAV and the host computer to send information to be transmitted to the UAV, and the UAV establishes a connection with the radio frequency control chip through the wireless communication protocol; NFC, UHF RFID, and other communication methods using wireless energy coupling or backscattering technology can be used between the UAV and the radio frequency control chip. The radio frequency control chip does not use a battery for power supply, and the required power for its work is received from the wireless communication signal. In this embodiment, the host computer and the UAV use a WiFi private protocol for data communication, and the ISO 180006C protocol suitable for UHF RFID is used for communication between the UAV and the radio frequency control chip. The radio frequency control chip selects EM4325.

[0095] b) Step S101, the signal transmitted by the wireless communication base station is reflected or transmitted by the RIS, and the signal power value A1 is received and recorded at the terminal device; At this time, the signal at the terminal includes the signal directly transmitted by the base station, the signal reflected by the RIS, and the mixed signal reflected or diffracted by other buildings and trees;

[0096] c) Step S103, the host computer uses the fireworks algorithm to calculate the on-off state required by the radio frequency switch assembly connected to the RIS unit, sends the calculation result to the radio frequency control chip, adjusts the on-off state of the radio frequency switch assembly, and records the signal power A2 at the terminal device;

[0097] d) Step S104, the host computer compares the signal powers A2 and A1, and if A2 meets the communication indicators, it enters step S110 to end the optimization process; Otherwise, according to the values of A2 and A1, use the intelligent optimization algorithm to optimize the on-off state of the radio frequency switch assembly, and send control signals through the radio frequency control chip to update the on-off state of the radio frequency switch assembly; Repeat steps b) to d), until the signal power A2 received by the terminal device reaches the required indicators.

[0098] The host computer is a computer running an artificial intelligence optimization algorithm.

Claims

1. An electromagnetic information control device based on memory storage materials, characterized in that, The system includes a dielectric substrate, an RF switch assembly, a RIS (Reference System) unit, and an RF control chip. The RF switch assembly includes a memory material, metal traces, and electrodes grown on a wafer substrate. The electrodes include RF electrodes and control electrodes. The output of the RF electrodes is directly connected to the memory material via metal traces, and the input of the RF electrodes is connected to the RIS unit lead positions and reactive components via metal bonding wires. The output of the control electrodes is interconnected via metal traces, and the input of the control electrodes is connected to the output port and ground of the RF control chip. An antenna is connected to the antenna transceiver port of the RF control chip. The memory material is a phase change material, GeTe.

2. The electromagnetic information control device based on memory storage material according to claim 1, characterized in that, The radio frequency electrode is directly bonded to the corresponding lead position of the RIS unit.

3. The electromagnetic information control device based on memory storage material according to claim 1, characterized in that, The antenna transceiver port of the radio frequency control chip is directly bonded to the corresponding lead position of the RIS unit.

4. The electromagnetic information control device based on memory storage material according to claim 1, characterized in that, The radio frequency control chip is a passive radio frequency chip that uses energy coupling to obtain energy from wireless signals and generate control pulse signals.

5. A manufacturing process for an electromagnetic information control device as described in any one of claims 1-4, characterized in that, 1) The wafer is cleaned sequentially with acetone, isopropanol, and deionized water, and then dried with nitrogen. 2) Growing metal traces on a wafer using photolithography to control memory storage materials, and growing an insulating layer to isolate the metal traces from the memory storage materials; 3) Growing memory storage materials on wafers using photolithography; 4) Radio frequency electrodes and control electrodes are fabricated on the wafer using photolithography. The control electrodes are connected to the metal traces in step 2) via vias. The radio frequency electrodes are directly connected to the memory storage material. 5) Divide the wafer to obtain radio frequency switch components; 6) Use bonding adhesive to attach the RF switch assembly to the lead position of the RIS cell on the dielectric substrate; 7) Bond the RF electrode input terminals to the RIS unit and the reactive element, respectively; Bond the input terminal of the control electrode to the output port of the RF control chip and ground; 8) Package the radio frequency control chip and radio frequency switch assembly on the surface of the dielectric substrate.

6. The manufacturing process of the electromagnetic information control device according to claim 5, characterized in that, The specific steps of the photolithography technique in step 2) are as follows: Photoresist is spin-coated onto a wafer, and the wafer coated with photoresist is subjected to electron beam exposure to display the pattern to be created on the photoresist; the exposed photoresist is removed, and metal material is grown into the photolithographic pattern. Remove all photoresist and grow an insulating layer on the wafer; The specific steps of the photolithography technique in step 3) are as follows: Photoresist is spin-coated onto the insulating material of the wafer. The wafer coated with photoresist is then exposed to electron beam to display the pattern to be created on the photoresist. The exposed photoresist is removed, and memory storage materials are grown using magnetron sputtering or chemical vapor deposition. Remove all photoresist; The specific steps for fabricating the electrode in step 4) are as follows: Repeat the same photoresist coating, exposure, and photoresist removal process as in steps 2) and 3) to grow metal traces and electrodes on the wafer using vapor deposition or magnetron sputtering techniques; remove all photoresist.

7. The manufacturing process of the electromagnetic information control device according to claim 5, characterized in that, The specific steps of encapsulation in step 8) are as follows: 8.1) Preheat the epoxy resin bonding adhesive at 50°C for 15 minutes; 8.2) Apply the epoxy resin bonding adhesive to the surface of the RF control chip, RF switch assembly and metal bonding wire. 8.3) Cur the substrate coated with epoxy resin bonding adhesive in a constant temperature oven at 120°C for 1 hour.

8. The manufacturing process of the electromagnetic information control device according to claim 5, characterized in that, The radio frequency switch assembly and radio frequency control chip are integrated onto a single chip using microelectronics' 3D packaging technology. After being packaged into a conventional chip, it is mounted on the surface of a dielectric substrate and connected to the RIS unit.

9. A method for adjusting and controlling an electromagnetic beam using the electromagnetic information control device according to any one of claims 1-4, characterized in that, a) The host computer establishes a wireless communication connection with the radio frequency control chip through the radio frequency reader / writer. When the base station signal power is insufficient to establish communication, a drone relay is used. b) The signal transmitted by the wireless communication base station is reflected or transmitted by the RIS, and the signal power value A1 is received and recorded at the terminal device; at this time, the signal at the terminal includes the signal directly transmitted by the base station, the signal reflected by the RIS, and the mixed signal reflected or diffracted by other buildings and trees. c) The host computer uses an intelligent optimization algorithm to calculate the required on / off state of the RF switch assembly connected to the RIS unit, sends the calculation results to the RF control chip, adjusts the on / off state of the RF switch assembly, and records the signal power A2 at the terminal device. d) The host computer compares the signal power A2 and A1. If A2 already meets the communication requirements, the optimization process ends. Otherwise, based on the values ​​of A2 and A1, the on / off state of the RF switch component is optimized using an intelligent optimization algorithm, and a control signal is sent through the RF control chip to update the on / off state of the RF switch component. e) Repeat steps b) to d) until the signal power A2 received by the terminal device reaches the required level.

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