A chip cutting post-processing method

Abstract

The present invention discloses a chip post-cutting processing method, comprising the following steps: (1) slicing a chip with a white film pasted on the electrode surface along the vertical direction and parallel direction of the electrode surface. (2) removing the white film on the electrode surface of the chip, then pasting the white film on the non-electrode surface of the chip, slicing along the vertical direction and parallel direction of the non-electrode surface, and retaining the white film on the non-electrode surface. (3) splitting the chip in the vertical direction and parallel direction along the center of the cutting path on the electrode surface of the chip. (4) cleaning the split chip, then micro-branching the white film, and after completion, inverting the chip so that the non-electrode surface of the chip faces the blue film pasting surface; then heating the chip to expand the film. The method of the present invention solves the problems of chip edge collapse, corner collapse, and residual glue pollution after cutting, and significantly improves the cutting yield. At the same time, the method does not require the addition of additional equipment and materials, and is easy to implement industrially.

Description

Technical Field

[0001] The present invention relates to the technical field of chip cutting, and in particular to a chip cutting post-processing method. Background Art

[0002] The information disclosed in the background of the invention is only intended to enhance the understanding of the overall background of the invention and should not be necessarily regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art.

[0003] In the LED chip preparation process, it is necessary to cut the entire chip into single chips of the required size, which is an indispensable process in the semiconductor light-emitting diode chip manufacturing process. Traditional cutting processes include laser cutting and saw blade cutting, but no matter which cutting method is used, the chip needs to be pasted to the sticky film first, and then heated, expanded and inverted after cutting. During the chip cutting and inverting process, due to the hard and brittle characteristics of the LED chip substrate, it is easy to have abnormalities such as chip edge collapse and damage; at the same time, due to the difference in the smoothness of the chip electrode surface and the increase in viscosity of the white film after heating, it is very easy to have abnormalities such as residual glue contamination on the chip electrode surface after inverting, which restricts the improvement of the LED chip cutting yield. Summary of the invention

[0004] The present invention provides a chip post-cutting processing method, which effectively solves abnormal conditions such as chip edge collapse, chip corner collapse, residual glue pollution, etc. after cutting, and significantly improves the cutting yield. At the same time, the method does not require additional equipment and materials, and is easy to implement industrially. To achieve the above purpose, the present invention discloses the following technical solution.

[0005] A chip post-cutting processing method comprises the following steps:

[0006] (1) Slice the chip with the non-electrode surface covered with white film in the vertical direction and parallel direction of the electrode surface.

[0007] (2) The white film on the non-electrode surface of the chip is removed, and then the white film is applied to the electrode surface of the chip. The chip is diced in the vertical direction and parallel direction along the non-electrode surface, and the white film on the electrode surface is retained.

[0008] (3) Cleave the chip vertically and parallel to the center of the cutting path on the non-electrode surface of the chip.

[0009] (4) Clean the chip after cleavage and perform micro-scratching on the white film. After completion, flip the chip over so that the non-electrode surface of the chip is covered with a blue film; then heat the chip to expand the film.

[0010] Furthermore, in step (1), the chip is a chip that has completed the production of positive and negative electrodes and has been thinned.

[0011] Furthermore, in step (1), the thickness of the chip is 150 to 170 μm.

[0012] Furthermore, in step (1), the chip is placed on a film laminating machine with the electrode surface facing downward, and the white film is covered and pasted on the non-electrode surface of the chip. Preferably, the heating temperature for laminating is 35-55°C.

[0013] Furthermore, in step (1), a laser scribing machine is used for scribing, the scribing laser power is 2 to 5 W, the scribing depth is 30 to 50 μm, and the scribing speed is 150 to 350 mm / s.

[0014] Furthermore, in step (2), the chip is placed on a film laminating machine with the non-electrode surface facing downward, and the white film is covered and pasted on the electrode surface of the chip. Preferably, the heating temperature for laminating is 35-55°C.

[0015] Furthermore, in step (2), a laser scribing machine is used for scribing, the scribing laser power is 2 to 5 W, the scribing depth is 30 to 50 μm, and the scribing speed is 150 to 350 mm / s.

[0016] Furthermore, in step (3), the splitting depth is 1 to 5 μm. Preferably, a splitting machine is used to split the chip, the spindle speed of the splitting machine is 10000 to 15000 μm / s, and the splitting knife descending time is 8 to 12 seconds.

[0017] Furthermore, in step (4), the chip is cleaned with high-pressure water. Optionally, the cleaning flow rate is 0.5-2 L / min, the platform speed is 2000-5000 r / min, and the cleaning time is 40-60 s to remove chips on the chip surface.

[0018] Furthermore, in step (4), the micro-scratching treatment temperature is 20-25° C., and the film expansion multiple is 1.02-1.05 times, so that tiny gaps are formed between the chips to achieve micro-scratching of the white film.

[0019] Furthermore, in step (4), the heating and film expansion temperature is 65 to 75° C., and the film expansion multiple is 1.45 to 1.55 times.

[0020] Furthermore, in step (4), after the heating and film expansion is completed, a step of inspecting the appearance of the chip using a microscope is also included to observe whether the cut chip has abnormal conditions such as edge collapse, corner collapse, residual adhesive contamination, etc. Preferably, the magnification of the microscope is 50 to 200 times.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] Conventional chip cutting post-processing methods are generally divided into two types: one is to first invert the film on the chip and then expand the film, but because the chips are close to each other, this method is very easy to cause the edges of the chips to collide with each other during the film inversion process, resulting in abnormalities such as chip edge collapse and corner collapse. The other is to expand the film first and then invert the film. When expanding the film, the white film needs to be heated, which will cause the colloid on the surface of the white film to become soft and sticky and easily adhere to the electrode on the surface of the chip, causing residual glue pollution on the surface of the chip and affecting the adhesion of the subsequent welding wire. The chip cutting post-processing method provided by the present invention first performs a micro-expansion treatment on the white film at room temperature after the chip is cut, so that the chips are separated from each other by a certain distance, and then when the film is inverted, it can effectively avoid the problem of chip collision during the film inversion process, resulting in edge collapse and corner collapse. Furthermore, after the film is inverted, the film is heated and expanded. At this time, the non-electrode surface of the chip contacts the blue film, while the electrode surface of the chip contacts the blue film after the cracking in the traditional process. If the film is heated and expanded at this time, the glue on the film is easy to remain on the electrode. The non-electrode surface of the chip after the process of the present invention contacts the blue film before heating and film expansion. At this time, heating and film expansion can well avoid chip electrode contamination caused by residual glue on the film. The method of the present invention effectively improves chip chipping and contamination abnormalities in conventional methods without adding additional equipment and materials, is easy to implement industrially, and can effectively improve chip cutting yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings in the specification, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0024] Figure 1 It is a flow chart of the implementation steps of the present invention.

[0025] Figure 2 This is a rendering of a chip manufactured using the process of Example 1 of the present invention.

[0026] Figure 3 This is a rendering of a chip manufactured using the process of Example 2 of the present invention.

[0027] Figure 4 This is a rendering of a chip manufactured using the process of Example 3 of the present invention.

[0028] Figure 5 This is a rendering of a chip manufactured using the process of Comparative Example 1 of the present invention.

[0029] Figure 6 This is a rendering of a chip manufactured using the process of Comparative Example 2 of the present invention. DETAILED DESCRIPTION

[0030] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used in the present invention have the same meanings as those commonly understood by those skilled in the art to which the present invention belongs.

[0031] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments according to the present invention. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0032] For the convenience of description, if the words "up", "down", "left" and "right" appear in the present invention, they only indicate that they are consistent with the up, down, left and right directions of the drawings themselves, and do not limit the structure. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the equipment or components referred to need to have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. The technical solution of the present invention is further described in conjunction with the drawings and specific embodiments of the specification.

[0033] Example 1

[0034] A method for post-processing LED chips, referring to Figure 1 , including the following steps:

[0035] (1) Prepare an LED chip with positive and negative electrodes that has been thinned and has a thickness of 170 μm.

[0036] (2) Place the LED chip with the electrode side facing downward on a laminating machine at a temperature of 50°C, cover the non-electrode side of the LED chip with the SPV-224S white film, and roll the laminating machine roller back and forth to compact the white film onto the LED chip until there are no bubbles or particles between the non-electrode side and the white film.

[0037] (3) Place the LED chip obtained in step (2) into an invisible laser scribing machine, set the laser scribing machine power to 4 W, the scribing depth to 35 μm, the scribing speed to 200 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the LED chip electrode surface in the vertical and parallel directions.

[0038] (4) Place the diced LED chip with the electrode side facing downward on a film laminating machine at a temperature of 50°C, and peel off the white film on the non-electrode side of the LED chip. Then flip the LED chip over so that the electrode side faces upward, cover the electrode side of the LED chip with the white film, and roll the roller of the film laminating machine back and forth to press the white film onto the electrode side of the LED chip until there are no bubbles or particles between the electrode side and the white film.

[0039] (5) Place the LED chip obtained in step (4) into an invisible laser scribing machine, set the laser scribing machine power to 4 W, the scribing depth to 35 μm, the scribing speed to 200 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the non-electrode surface of the LED chip in the vertical and parallel directions. The scratches obtained are located on the opposite side of the scratches on the electrode surface of the LED chip, and the white film on the electrode surface of the LED chip is retained.

[0040] (6) After the dicing in step (5) is completed, the LED chip is placed in a chip splitting machine. The spindle speed of the chip splitting machine is 12000 μm / s, the cleaving knife descending time is 10 s, the cleaving knife depth is 3 μm, and the LED chip is split vertically and parallel to the center of the cutting path on the non-electrode surface of the LED chip.

[0041] (7) The split LED chip is placed in a high-pressure pure water cleaning machine to perform high-pressure cleaning on the surface of the LED chip, wherein the water flow rate is set to 1.8 L / min, the platform speed is set to 3500 r / min, and the cleaning time is set to 50 s.

[0042] (8) Place the cleaned LED chips on a film expander platform at room temperature of 25°C, set the film expansion factor to 1.05 times, so that tiny gaps are formed between the LED chips to perform micro-expansion on the white film.

[0043] (9) Paste the SPV-224S blue film on the non-electrode surface of the LED chip after micro-expansion. Press the blue film evenly on the non-electrode surface of the LED chip at room temperature. Then flip the LED chip so that the non-electrode surface faces down and the electrode surface faces up. Then tear off the white film on the electrode surface at 45 degrees to complete the inverted film of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film.

[0044] (10) Place the LED chip after film inversion on the film expander platform at 70°C and set the film expansion magnification to 1.5 times for secondary film expansion. After completion, use a 200x microscope to inspect the appearance of the LED chip. The results are as follows: Figure 2 As shown, it can be seen that the surface of the LED chip is clean, the edge of the LED chip is complete, and there is no abnormal corner or edge collapse.

[0045] Example 2

[0046] A method for post-processing LED chips, referring to Figure 1 , including the following steps:

[0047] (1) Prepare an LED chip with positive and negative electrodes that has been thinned and has a thickness of 150 μm.

[0048] (2) Place the LED chip with the electrode side facing downward on a laminating machine at a temperature of 35°C, cover the non-electrode side of the LED chip with the SPV-224S white film, and roll the laminating machine roller back and forth to compact the white film onto the LED chip until there are no bubbles or particles between the non-electrode side and the white film.

[0049] (3) Place the LED chip obtained in step (2) into an invisible laser scribing machine, set the laser scribing machine power to 3 W, the scribing depth to 30 μm, the scribing speed to 150 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the LED chip electrode surface in the vertical and parallel directions.

[0050] (4) Place the diced LED chip with the electrode side facing downward on a film laminating machine at a temperature of 35°C, and peel off the white film on the non-electrode side of the LED chip. Then flip the LED chip over so that the electrode side faces upward, and cover the electrode side of the LED chip with the white film. Roll the roller of the film laminating machine back and forth to compact the white film onto the electrode side of the LED chip until there are no bubbles or particles between the electrode side and the white film.

[0051] (5) Place the LED chip obtained in step (4) into an invisible laser scribing machine, set the laser scribing machine power to 3 W, the scribing depth to 30 μm, the scribing speed to 150 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the non-electrode surface of the LED chip in the vertical and parallel directions. The scratches obtained are located on the opposite side of the scratches on the electrode surface of the LED chip, and the white film on the electrode surface of the LED chip is retained.

[0052] (6) After the dicing in step (5) is completed, the LED chip is placed in a chip splitting machine. The spindle speed of the chip splitting machine is 15000 μm / s, the cleaving knife descending time is 12 s, the cleaving knife depth is 5 μm, and the LED chip is split vertically and parallel to the center of the cutting path on the non-electrode surface.

[0053] (7) The split LED chip is placed in a high-pressure pure water cleaning machine to perform high-pressure cleaning on the surface of the LED chip, wherein the water flow rate is set to 0.5 L / min, the platform speed is set to 5000 r / min, and the cleaning time is set to 40 s.

[0054] (8) Place the cleaned LED chips on a film expander platform at room temperature of 25°C, set the film expansion multiple to 1.03 times, so that tiny gaps are formed between the LED chips to perform micro-expansion on the white film.

[0055] (9) Paste the SPV-224S blue film on the non-electrode surface of the LED chip after micro-expansion. Press the blue film evenly on the non-electrode surface of the LED chip at room temperature. Then flip the LED chip so that the non-electrode surface faces down and the electrode surface faces up. Then tear off the white film on the electrode surface at 45 degrees to complete the inverted film of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film.

[0056] (10) Place the LED chip after film inversion on the film expander platform at 65°C and set the film expansion magnification to 1.45 times for secondary film expansion. After completion, use a 200x microscope to inspect the appearance of the LED chip. The results are as follows: Figure 3 As shown, it can be seen that the surface of the LED chip is clean, the edge of the LED chip is complete, and there is no abnormal corner or edge collapse.

[0057] Example 3

[0058] A method for post-processing LED chips, referring to Figure 1 , including the following steps:

[0059] (1) Prepare an LED chip with positive and negative electrodes that has been thinned and has a thickness of 160 μm.

[0060] (2) Place the LED chip with the electrode side facing downward on the table of a film laminating machine at a temperature of 55°C, cover the non-electrode surface of the LED chip with the SPV-224S white film, and roll the roller of the film laminating machine back and forth to compact the white film onto the LED chip until there are no bubbles or particles between the non-electrode surface and the white film.

[0061] (3) Place the LED chip obtained in step (2) into an invisible laser scribing machine, set the laser scribing machine power to 5 W, the scribing depth to 50 μm, the scribing speed to 350 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the LED chip electrode surface in the vertical and parallel directions.

[0062] (4) Place the diced LED chip with the electrode side facing downward on a film laminating machine at a temperature of 55°C, and peel off the white film on the non-electrode side of the LED chip. Then flip the LED chip over so that the electrode side faces upward, cover the electrode side of the LED chip with the white film, and roll the roller of the film laminating machine back and forth to press the white film onto the electrode side of the LED chip until there are no bubbles or particles between the electrode side and the white film.

[0063] (5) Place the LED chip obtained in step (4) into an invisible laser scribing machine, set the laser scribing machine power to 5 W, the scribing depth to 50 μm, the scribing speed to 350 mm / s, set the laser beam along the center of the LED chip cutting path, and scribing the non-electrode surface of the LED chip in the vertical and parallel directions. The scratches obtained are located on the opposite side of the scratches on the electrode surface of the LED chip, and the white film on the electrode surface of the LED chip is retained.

[0064] (6) After the dicing in step (5) is completed, the LED chip is placed in a chip splitting machine. The spindle speed of the chip splitting machine is 10000 μm / s, the cleaving knife descending time is 8 s, the cleaving knife depth is 1 μm, and the LED chip is split vertically and parallel to the center of the cutting path on the non-electrode surface of the LED chip.

[0065] (7) The split LED chip is placed in a high-pressure pure water cleaning machine to perform high-pressure cleaning on the surface of the LED chip, wherein the water flow rate is set to 2.0 L / min, the platform speed is set to 2000 r / min, and the cleaning time is set to 60 s.

[0066] (8) The cleaned LED chips are placed on a film expander platform at room temperature of 25°C, and the film expansion factor is set to 1.02 times, so that a tiny gap is formed between the LED chips to perform a micro-expansion treatment on the white film.

[0067] (9) Paste the SPV-224S blue film on the non-electrode surface of the LED chip after micro-expansion. Press the blue film evenly on the non-electrode surface of the LED chip at room temperature. Then flip the LED chip so that the non-electrode surface faces down and the electrode surface faces up. Then tear off the white film on the electrode surface at 45 degrees to complete the inverted film of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film.

[0068] (10) Place the LED chip after film inversion on the film expander platform at 75°C and set the film expansion magnification to 1.55 times for secondary film expansion. After completion, use a 200x microscope to inspect the appearance of the LED chip. The results are as follows: Figure 4 As shown, it can be seen that the surface of the LED chip is clean, the edge of the LED chip is complete, and there is no abnormal corner or edge collapse.

[0069] Comparative Example 1

[0070] A conventional LED chip cutting and post-processing method is similar to that of Example 1, except that after the cleaning process of step (7) is completed, step (10) and step (9) are directly performed, namely:

[0071] (10) The cleaned LED chip is placed on a film expander platform at 75°C and the film expansion factor is set to 1.5 times for film expansion.

[0072] (9) Paste the SPV-224S blue film on the non-electrode surface of the LED chip after film expansion. Press the blue film evenly on the non-electrode surface of the LED chip at room temperature. Then flip the LED chip so that the non-electrode surface faces down and the electrode surface faces up. Then tear off the white film on the electrode surface at 45 degrees to complete the film inversion of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film.

[0073] After completion, the LED chip appearance was inspected using a 200x microscope. The results are as follows: Figure 5 As shown, it can be seen that without micro-expansion treatment of the white film, there is obvious residual glue contamination on the surface of the LED chip electrode.

[0074] Comparative Example 2

[0075] A conventional LED chip cutting and post-processing method is similar to Example 1, except that after the cleaning process of step (7) is completed, step (8) is omitted and steps (9) and (10) are directly performed, namely:

[0076] (7) The split LED chip is placed in a high-pressure pure water cleaning machine to perform high-pressure cleaning on the surface of the LED chip, wherein the water flow rate is set to 2.0 L / min, the platform speed is set to 2000 r / min, and the cleaning time is set to 60 s.

[0077] (9) Paste the SPV-224S blue film on the non-electrode surface of the cleaned LED chip. Press the blue film evenly on the non-electrode surface of the LED chip at room temperature. Then flip the LED chip so that the non-electrode surface faces down and the electrode surface faces up. Then tear off the white film on the electrode surface at 45 degrees to complete the film inversion of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film.

[0078] (10) Place the LED chip after filming on a 75°C film expander platform and set the film expansion magnification to 1.5 times. After completion, use a 200x microscope to inspect the appearance of the LED chip. The results are as follows: Figure 6 As shown, it can be seen that there is an obvious corner chipping problem on the surface of the LED chip.

[0079] Table 1

[0080]

[0081] Table 1 above is the test results of chip abnormality ratios of the above-mentioned embodiments and comparative examples. It can be seen from the results in Table 1 that: relative to the comparative examples, each embodiment can significantly alleviate the problems of chip edge and corner collapse during the chip film inversion process, as well as the problem of chip electrode surface contamination caused by residual glue on the film during the heating and film expansion process. This is because the process adopted in the embodiment first performs a micro-expansion treatment on the white film at room temperature after the chip is cut, so that the chips are separated from each other by a certain distance, and then when the film is inverted, it can effectively avoid the problem of chip collisions during the film inversion process, causing edge and corner collapse. Furthermore, after the film is inverted, the film is heated and expanded again. At this time, the non-electrode surface of the chip contacts the blue film, which avoids the chip electrode surface contamination caused by residual glue on the film.

[0082] Finally, it should be noted that any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention. Although the above describes the specific implementation of the present invention in conjunction with the drawings, it is not a limitation of the protection scope of the present invention. Those skilled in the art should understand that on the basis of the technical solution of the present invention, various modifications or deformations that can be made by those skilled in the art without creative labor are still within the protection scope of the present invention.

Claims

1. A chip cutting post-processing method, characterized in that: The steps include: (1) Slice the chip with white film on the non-electrode surface in the vertical direction and parallel direction of the electrode surface; (2) removing the white film on the non-electrode surface of the chip, then applying the white film to the electrode surface of the chip, scribing along the vertical direction and parallel direction of the non-electrode surface, and retaining the white film on the electrode surface; (3) Cleave the chip vertically and parallel to the center of the cutting path on the non-electrode surface of the chip; (4) Clean the chip after cleavage, and then micro-expand the white film at 20-25°C, paste the blue film on the non-electrode surface of the LED chip after micro-expanding, press the blue film evenly on the non-electrode surface of the LED chip at room temperature, turn the LED chip over so that the non-electrode surface faces down and the electrode surface faces up, and then tear off the white film on the electrode surface at 45° to complete the inverted film of the LED chip. At this time, the non-electrode surface of the LED chip contacts the blue film; then heat the chip to expand the film.

2. The chip post-cutting processing method according to claim 1, characterized in that: In step (1), the chip is a chip that has completed the production of positive and negative electrodes and has been thinned.

3. The chip post-cutting processing method according to claim 2, characterized in that: The thickness of the chip is 150-170 μm.

4. The chip post-cutting processing method according to claim 1, characterized in that: In step (1), the chip is placed on a film laminating machine with the electrode surface facing downward, and the white film is pasted on the non-electrode surface of the chip.

5. The chip post-cutting processing method according to claim 4, characterized in that: The heating temperature of the film is 35~55℃.

6. The chip post-cutting processing method according to claim 1, characterized in that: In step (1), a laser scribing machine is used for scribing, the scribing laser power is 2-5 W, the scribing depth is 30-50 μm, and the scribing speed is 150-350 mm / s.

7. The chip post-cutting processing method according to claim 1, characterized in that: In step (2), the chip is placed on a film laminating machine with the non-electrode surface facing downward, and the white film is pasted onto the electrode surface of the chip.

8. The chip post-cutting processing method according to claim 7, characterized in that: The heating temperature of the film is 35~55℃.

9. The chip post-cutting processing method according to claim 1, characterized in that: In step (1) and step (2), a laser scribing machine is used for scribing, the scribing laser power is 2-5 W, the scribing depth is 30-50 μm, and the scribing speed is 150-350 mm / s.

10. The chip post-cutting processing method according to claim 1, characterized in that: In step (1) and step (3), the cleavage depth is 1 to 5 μm.

11. The chip post-cutting processing method according to claim 1, characterized in that: The chip is split by a splitting machine, the spindle speed of the splitting machine is 10000~15000μm / s, and the splitting knife descending time is 8~12s.

12. The chip post-cutting processing method according to claim 1, characterized in that: In step (1) and step (4), the chip is cleaned with high-pressure water.

13. The chip post-cutting processing method according to claim 12, characterized in that: The cleaning flow rate is 0.5~2L / min, the platform speed is 2000~5000r / min, and the cleaning time is 40~60s.

14. The chip post-cutting processing method according to claim 1, characterized in that: In step (4), the film expansion multiple is 1.02 to 1.05 times.

15. The chip post-cutting processing method according to claim 1, characterized in that: In step (4), the heating and film expansion temperature is 65-75°C, and the film expansion multiple is 1.45-1.55 times.

16. The chip post-cutting processing method according to any one of claims 1 to 15, characterized in that: In step (4), after the heating and film expansion is completed, the chip appearance is inspected using a microscope.

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