Efficient field-circuit collaborative simulation method based on space mapping technology

Abstract

The present invention discloses an efficient field-circuit collaborative simulation method based on space mapping technology, and proposes an analysis of energy selection surface based on space mapping algorithm. The method mainly introduces a coarse model and a fine model. In the solution process, the coarse model with high computational efficiency is used for solution, and after the solution is completed, the fine model with low computational efficiency is used for verification. In the present invention, the coarse model is an equivalent circuit model, and the fine model is a real physical model. The results show that the method can not only maintain a high accuracy, but also has a significant acceleration effect.

Description

Technical Field

[0001] The present invention belongs to the field of efficient analysis of circuit and electromagnetic field coupling problems, in particular to a numerical analysis method designed for nonlinear circuit and electromagnetic field coupling problems, and in particular to an efficient field-circuit collaborative simulation method based on space mapping technology. Background Art

[0002] The spatial mapping algorithm is an optimization algorithm proposed by Canadian scholars Bandler.JW and Biernacki.RM in 1994. The algorithm involves a coarse model and a fine model. The core idea is: assuming that there is a certain mapping relationship between the coarse model and the fine model, using this mapping relationship, the optimization of the complex and time-consuming fine model is transformed into the optimization of the simple and fast coarse model, thereby achieving efficient optimization. Common spatial mapping algorithms include: original spatial mapping algorithm (OSM), progressive spatial mapping algorithm (ASM), confidence interval progressive mapping algorithm (TRASM), etc.

[0003] When using OSM for optimization, it is necessary to provide multiple accurate simulation responses to provide sample space for parameter extraction, which is very time-consuming. In addition, OSM assumes that the spatial mapping relationship between the coarse model and the fine model is linear, which has great limitations. In order to avoid this problem, researchers proposed ASM. ASM does not require multiple simulations of fine models in the early stage to provide sample space for parameter extraction, and the mapping relationship between coarse and fine models is not limited to linearity, but can also solve nonlinear optimization problems. However, due to the non-uniqueness of ASM parameter extraction, the algorithm sometimes does not converge, so researchers modified ASM and proposed TRASM. TRASM converges better than ASM, but the process of judging convergence is cumbersome and time-consuming.

[0004] At present, when analyzing the real physical model of diodes and the electromagnetic field co-simulation, experts and scholars directly solve the real physical model of diodes, namely the drift-diffusion equations, and bring the current density solution results into the field-path coupling nonlinear equations for re-solution. First, the drift-diffusion equations are nonlinear equations, and the Newton iteration method is used; secondly, the field-path coupling equations are also nonlinear equations, and the Newton iteration method is also used; in this way, the calculation process presents a Newton iteration loop nested in another Newton iteration loop, which is very time-consuming. Summary of the invention

[0005] The purpose of the present invention is to provide an efficient field-path collaborative simulation method based on space mapping technology to address the problems existing in the prior art. For the numerical analysis of energy selective surfaces in a high-power electromagnetic pulse environment, this method can quickly and accurately obtain the spatial electromagnetic field distribution and the transport characteristics of the PIN tube loaded by the energy selective surface.

[0006] The technical solution to achieve the purpose of the present invention is: an efficient field-circuit collaborative simulation method based on space mapping technology, the method comprising the following steps:

[0007] Step 1, establish a spatial electromagnetic field simulation model and a nonlinear circuit PIN tube model, and use a mixture of tetrahedrons and hexahedrons to mesh the two models discretized to obtain the structural information of the model, including tetrahedron, hexahedron unit information and node information;

[0008] Step 2, substitute the volt-ampere characteristic equation of the coarse model into the field-circuit coupling equation group, consider the influence of the spatial electromagnetic field, solve the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port, and use the values ​​of the four variables as the design values ​​of the fine model to determine whether the design values ​​of the fine model satisfy the field-circuit coupling equation group. If so, go to step 4, otherwise go to the next step;

[0009] Step 3, use the coarse model to extract parameters of the response of the fine model, and update the mapping matrix between the coarse model and the fine model, calculate the residual vector of the space mapping algorithm, and the incremental step of the fine model design value, and solve to obtain the new design value of the fine model, and then determine whether the design value of the fine model satisfies the field-circuit coupling equation group. If not, repeat step 3, otherwise execute the next step;

[0010] Step 4, the voltage information in the fine model design value is transmitted to the PIN tube, and the semiconductor transport characteristics at this moment are obtained;

[0011] Step 5, considering the influence of the electric field and magnetic field at the port on the spatial electromagnetic field, solving the spatial electromagnetic field equations, and thereby analyzing the insertion loss and shielding effectiveness of the energy selective surface.

[0012] Compared with the prior art, the present invention has the following significant advantages: 1) DG-FETD adopts tetrahedral mixed partitioning, which is flexible in modeling and convenient in partitioning, and can fit irregular models more accurately and efficiently. The mass matrix formed is a block diagonal matrix, which is easy to invert, greatly saving calculation time; 2) The energy selection surface is loaded with the real physical model of the PIN tube, which can be closer to the actual situation and provide theoretical guidance for the project; 3) For the problem of low efficiency of energy selection surface analysis loaded with the real physical model of semiconductor devices, the present invention adopts space mapping technology to accelerate it, greatly improving the efficiency of the algorithm; 4) It is proposed to use the space mapping algorithm to introduce a coarse model with high calculation efficiency to replace the fine model with low calculation efficiency in the calculation process, and the fine model verification can be performed after the Newton iteration converges, which can save a lot of calculation time and improve the calculation efficiency.

[0013] The present invention is further described in detail below in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a flow chart of an efficient field-circuit collaborative simulation method based on spatial mapping technology.

[0015] Figure 2 1 is a top view of an energy selective surface in an embodiment, wherein FIG. (a) is a schematic diagram of a periodic structure energy selective surface, and FIG. (b) is a schematic diagram of a single unit in the periodic structure.

[0016] Figure 3 Schematic diagram of a PIN tube in one embodiment.

[0017] Figure 4 FIG. 1 is a schematic diagram of an incident plane wave used for calculation in an embodiment.

[0018] Figure 5 FIG. 1 is a schematic diagram of voltage across a port surface calculated in an embodiment.

[0019] Figure 6 FIG. 4 is a spatial transmission electric field distribution diagram calculated in an embodiment. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0021] In one embodiment, in combination Figure 1 , provides an efficient field-circuit collaborative simulation method based on space mapping technology, the method comprising the following steps:

[0022] Step 1, establish a spatial electromagnetic field simulation model and a nonlinear circuit PIN tube model, and use a mixture of tetrahedrons and hexahedrons to mesh the two models discretized to obtain the structural information of the model, including tetrahedron, hexahedron unit information and node information;

[0023] Step 2, substitute the volt-ampere characteristic equation of the coarse model into the field-circuit coupling equation group, consider the influence of the spatial electromagnetic field, solve the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port, and use the values ​​of the four variables as the design values ​​of the fine model to determine whether the design values ​​of the fine model satisfy the field-circuit coupling equation group. If so, go to step 4, otherwise go to the next step;

[0024] Step 3, use the coarse model to extract parameters of the response of the fine model, and update the mapping matrix between the coarse model and the fine model, calculate the residual vector of the space mapping algorithm, and the incremental step of the fine model design value, and solve to obtain the new design value of the fine model, and then determine whether the design value of the fine model satisfies the field-circuit coupling equation group. If not, repeat step 3, otherwise execute the next step;

[0025] Step 4, the voltage information in the fine model design value is transmitted to the PIN tube, and the semiconductor transport characteristics at this moment are obtained;

[0026] Step 5, considering the influence of the electric field and magnetic field at the port on the spatial electromagnetic field, solving the spatial electromagnetic field equations, and thereby analyzing the insertion loss and shielding effectiveness of the energy selective surface.

[0027] Furthermore, in one embodiment, the coarse model in step 2 adopts a semiconductor device equivalent circuit model, and its volt-ampere characteristic equation is:

[0028]

[0029] In the formula, I 0 represents the reverse saturation current of the diode, q represents the unit charge, k b represents the Boltzmann constant, T represents the temperature, V D Indicates the voltage provided to the circuit at the port;

[0030] The detailed model adopts the real physical model of semiconductor devices, and its volt-ampere characteristic equation is:

[0031]

[0032] In the formula, n, p, They represent the electron concentration, hole concentration and electric potential respectively, D n , D p represent the diffusion coefficients of electrons and holes, μ n , μ p They represent the mobility of electrons and holes respectively, E represents the electric field formed by the potential difference, and J n , J n They represent the diffusion current density of electrons and holes respectively, and J represents the total current density, which is the sum of the displacement current and the diffusion current density.

[0033] Further, in one embodiment, the volt-ampere characteristic equation of the coarse model is substituted into the field-circuit coupling equation group in step 2, and the influence of the spatial electromagnetic field is considered to solve the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port, specifically including:

[0034] The field-circuit coupling equations are:

[0035]

[0036]

[0037]

[0038]

[0039] In the formula, ε represents the dielectric constant; μ represents the magnetic permeability; P 1 e represents the electric field at the port; P 1 h represents the magnetic field at the port; c 0 represents the speed of light in a vacuum; is the wave vector, where e x 、e y Represents the unit vectors of the X-axis and Y-axis respectively, θ i Represents the angle between the incident wave and the positive direction of the Z axis, θ i ∈[0,π], Represents the angle between the incident wave and the positive direction of the X-axis, θ i ∈[0,2π]; Indicates the current density; V D It represents the voltage provided to the circuit at the port; l represents the voltage integral line on the port surface;

[0040] Step 2-1, perform Galerkin test, unknown expansion, and vector identity transformation on the field-circuit coupling equations; among them, perform Galerkin test on equations (1.3) and (1.4):

[0041]

[0042]

[0043] Step 2-2, substitute the numerical flux of field-circuit coupling shown in the following formula into the result of step 2-1,

[0044]

[0045] In the formula, e n Represents the unit external normal vector of the face; Indicates intrinsic impedance; P e , P h Represent the electric field and magnetic field respectively; the "+" sign in the upper right corner indicates the relevant information of the adjacent body, and no sign indicates the relevant information of the main body; J represents the current density;

[0046] Simplify equations (1.7) and (1.8) to:

[0047]

[0048]

[0049] Written in matrix equation form:

[0050]

[0051]

[0052] Afterwards

[0053] The field-circuit coupling equations in a compact format are obtained as the following matrix equation:

[0054]

[0055] The matrix elements are:

[0056]

[0057]

[0058]

[0059]

[0060]

[0061]

[0062]

[0063]

[0064]

[0065]

[0066] In the formula, represent the test basis function and the expanded basis function of the electric field respectively; Respectively represent the test basis function and the expanded basis function of the magnetic field; l J Indicates the direction of current density; e l represents the direction of electric field integration;

[0067] It is worth noting that for the coarse model and the fine model, the difference is that f(V D ) term; Formula (1.14) is a nonlinear equation, and the present invention adopts Newton's iteration method to solve it;

[0068] Step 2-3, use the Newton iteration method to solve the above equation (1.14) to form the DGTD semi-discrete form:

[0069]

[0070] In the formula, the influence of the space electromagnetic field on the field-path coupling area is considered, that is, the first term on the right side of the equation, P2 e , P 2 h They represent the electric field and magnetic field in space respectively.

[0071] Step 2-4, the DGTD semi-discrete form is abbreviated as:

[0072]

[0073] In the formula, u is the unknown quantity to be solved;

[0074] Step 2-5, expand the unknown quantity u to be solved using Taylor series, and the expansion result is as follows:

[0075]

[0076] Where n is the order of Taylor expansion, which is also the order of ADER;

[0077] The DG-FETD formula with n-order ADER scheme is obtained, which can be abbreviated as:

[0078]

[0079] Step 2-6, use equation (1.18) to solve equation (1.15) to obtain the values ​​of the four variables: electric field, magnetic field, voltage, and current density at the port.

[0080] Furthermore, in one embodiment, the updating rule of the mapping matrix between the coarse model and the fine model in step 3 is as follows:

[0081]

[0082] In the formula, i represents the number of mappings, i = 1, 2, 3, ..., when i = 1, the mapping matrix between the coarse model and the fine model is B 1 =I;

[0083] The calculation formula of the residual vector of the space mapping algorithm is:

[0084]

[0085] Where P(·) represents the parameter extraction of the fine model response using the coarse model, X c * represents the solution obtained by substituting the rough model volt-ampere characteristic equation into the field-circuit coupling equation group, f (i) is the residual vector of the i-th mapping;

[0086] The calculation formula of the incremental step length of the fine model design value is:

[0087] h(i) =-(B (i) ) -1 f (i) (1.21)

[0088] In the formula, h (i) is the incremental step size of the i-th mapping;

[0089] The design value of the new fine model is obtained by solving:

[0090]

[0091] In the formula, Design value of the fine model for the i-th mapping.

[0092] Further, in one embodiment, the process of determining whether the design value of the fine model satisfies the field-circuit coupling equations in step 2 and step 3 specifically includes:

[0093] Step 3-1, passing the voltage value solved by the coarse model to the fine model to solve the current density;

[0094] Step 3-2, calculate the difference between the current density solved by the coarse model and the current density solved by step 3-1. If the difference is within the preset allowable range, it indicates that the design value of the fine model satisfies the field-circuit coupling equation group, otherwise it indicates that it does not satisfy it.

[0095] Here, since the field-circuit coupling equations are nonlinear, when one of the electric field, current density, and voltage is known, the equations can be solved. Therefore, the present invention chooses to map one of the variables. If the electric field is mapped, since there are too many unknown quantities in the electric field, the mapping matrix is ​​large, and it is time-consuming to find the inverse matrix, the present invention chooses to map the current density.

[0096] Further, in one embodiment, the current density obtained in step 3-1 and the semiconductor transport characteristics obtained at this moment in step 4 are obtained by solving the transient model equation of the PIN tube, and the transient model equation of the PIN tube includes:

[0097] Normalized Poisson equation:

[0098] Normalized electron current density equation:

[0099] Normalized hole current density equation:

[0100] Normalized electron current continuity equation:

[0101] Normalized hole current continuity equation:

[0102] Normalized compound rate model:

[0103] Among them, equations (1.23), (1.26) and (1.27) characterize the semiconductor transport properties;

[0104] Where N represents the net doping concentration, τ n , τ n Represent the lifetime of electrons and holes respectively, G and R represent the generation and recombination terms of carriers.

[0105] Further, in one embodiment, the transient model equation of the PIN tube is solved, such as Figure 2 As shown, the boundary conditions of the PIN tube are Ohmic contact boundary conditions at both ends and floating boundary conditions on the other boundary surfaces. Since the transient model equations of the PIN tube are nonlinear, they need to be solved using Newton iteration. Before forming Newton iteration, time discretization is required.

[0106] The specific process includes:

[0107] (1) Using the backward Euler method, we perform time differentiation on equations (1.23), (1.26) and (1.27) to obtain:

[0108]

[0109]

[0110]

[0111] In the formula, the superscript t represents the value at the current moment, and t-1 represents the value at the previous moment;

[0112] (2) Perform Newton iteration on equations (1.29) to (1.31) to obtain:

[0113]

[0114] in,

[0115]

[0116]

[0117]

[0118] Among them, the avalanche generation term G is:

[0119]

[0120] In the formula, α n , α p are the ionization coefficients of electrons and holes, respectively:

[0121]

[0122]

[0123] Where, T is the temperature inside the PIN tube at the current moment; T ref is the initial temperature; A n ,B n ,C n ,D n and A p ,B p ,C p ,D p is a constant; E ||,n Represents the electric field parallel to the direction of electron movement; E ||,p represents the electric field parallel to the direction of hole motion;

[0124] (3) Newton iteration is performed on equation (1.32). In particular, the avalanche generation term G is solved using the Gummel model. This is because the avalanche term contains current density and electric field intensity, and it is very difficult and complicated to perform operations such as Galerkin test on it.

[0125] Further, in one embodiment, the step 5 of solving the spatial electromagnetic field equations specifically includes:

[0126] The space electromagnetic field equations include:

[0127]

[0128]

[0129] Step 5-2, perform the same Galerkin method test, unknown quantity expansion, and vector identity transformation on equations (1.33) and (1.34) as the field-circuit coupling equations to obtain the matrix equation:

[0130]

[0131]

[0132] Step 5-2, use equation (1.18) to solve equations (1.41) and (1.42).

[0133] As a specific example, in one of the embodiments, the present invention is further verified and explained.

[0134] by Figure 2Take the analyzed energy selective surface as an example: the energy selective surface is a periodic structure. The present invention introduces Floquet theorem and periodic boundary conditions to analyze a single unit in the periodic structure and then extrapolate to the entire periodic structure. Figure 2 (b) The upper and lower regions in the middle are metal patches with dimensions d = 2 mm, d1 = 2 mm, d2 = 4 mm, d3 = 10 mm, the dielectric substrate thickness h = 2 mm, and the dielectric constant ε r =4.3. Figure 3 It is a PIN tube loaded on a periodic structure with a cross-sectional area of ​​7.45e-5cm 2 The P and N regions are Gaussian doped, with doping concentrations of 2.38e19cm -3 、1.95e19cm -3 , the I region is uniformly doped with a doping concentration of 1.30e13cm -3 In order to intuitively reflect the characteristics of the energy selective surface, this example uses a sinusoidal plane wave with an amplitude of 500V / m and a frequency of 1.5GHz to vertically incident on the energy selective surface. The plane wave time domain waveform is as follows: Figure 4 As shown, the port voltage and the spatial electromagnetic field distribution are as follows Figure 5 , Figure 6 shown.

[0135] Depend on Figure 5 It can be analyzed that the periodic structure loading two PIN tubes on the port surface has a good shielding effect on high power, and there are two states of peak leakage and flat-top leakage, which is consistent with the actual situation.

[0136] Depend on Figure 5 , Figure 6 It can be seen intuitively that when the periodic structure is not loaded with a PIN tube, the spatial transmission electric field intensity is -500V / m~500V / m, which is exactly the same as the amplitude of the incident source; when the periodic structure is loaded with a single PIN tube, the spatial transmission electric field intensity and the voltage at both ends of the PIN tube show an obvious positive "limiting" phenomenon. The reason for this phenomenon is the "forward conduction, reverse cutoff" characteristic of the PIN tube; when the periodic structure is loaded with two parallel and reverse PIN tubes, the spatial transmission electric field intensity and the voltage at both ends of the PIN tube show a "limiting" phenomenon regardless of the forward or reverse electromagnetic field. This is because no matter it is the forward electromagnetic field or the reverse electromagnetic field, there is always a PIN tube that is turned on.

[0137] The conventional method for collaborative simulation of nonlinear circuits and electromagnetic fields is to use Newton iteration to solve the drift-diffusion equations to obtain current density, and then bring the current density into the field-path coupling equations to solve them using Newton iteration, that is, a Newton iteration loop nests another Newton iteration loop. The method proposed in the present invention is to replace the real physical model of the PIN tube with the PIN tube equivalent circuit model during the Newton iteration process, and there is no need to solve the drift-diffusion equations. It only needs to be verified by the drift-diffusion equations after convergence; in this way, the solution process only has a Newton iteration loop for solving the field-path coupling equations, and there is no Newton iteration loop nested in another Newton iteration loop in the conventional method.

[0138] In order to reflect the high efficiency of the method proposed in the present invention, Table 1 compares the solution time of the algorithm with spatial mapping and the algorithm without spatial mapping.

[0139] Table 1 Acceleration effect of spatial mapping algorithm

[0140] Incident source amplitude No spatial mapping algorithm There is a spatial mapping algorithm Time ratio 500V / m 5.6h 1.5h 3.7 1000V / m 8.5h 2.0h 4.3 1500V / m 12.1h 2.3h 5.3

[0141] It can be seen from Table 1 that the method proposed in the present invention saves calculation time compared with the conventional method, and as the amplitude of the incident source increases, the acceleration efficiency of the method proposed in the present invention becomes more significant. This is because the increase in the amplitude of the incident source will cause the induced voltage generated by the metal patch on the surface of the periodic structure to become larger, the nonlinearity of the drift-diffusion equation group will be enhanced, and the nonlinearity of the field-path coupling equation group will also be enhanced.

[0142] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. An efficient field-circuit collaborative simulation method based on space mapping technology, characterized in that: The method comprises the following steps: Step 1, establish a spatial electromagnetic field simulation model and a nonlinear circuit PIN tube model, and use a mixture of tetrahedrons and hexahedrons to mesh the two models discretized to obtain the structural information of the model, including tetrahedron, hexahedron unit information and node information; Step 2, substitute the volt-ampere characteristic equation of the coarse model into the field-circuit coupling equation group, consider the influence of the spatial electromagnetic field, solve the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port, and use the values ​​of the four variables as the design values ​​of the fine model to determine whether the design values ​​of the fine model satisfy the field-circuit coupling equation group. If so, go to step 4, otherwise go to the next step; Substituting the volt-ampere characteristic equation of the coarse model into the field-circuit coupling equation group, considering the influence of the spatial electromagnetic field, solving the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port, specifically includes: The field-circuit coupling equations are: In the formula, ε represents the dielectric constant; μ represents the magnetic permeability; P1 e Represents the electric field at the port; P1 h represents the magnetic field at the port; c0 represents the speed of light in vacuum; is the wave vector, where e x 、e y Represents the unit vectors of the X-axis and Y-axis respectively, θ i Represents the angle between the incident wave and the positive direction of the Z axis, θ i ∈[0,π], Represents the angle between the incident wave and the positive direction of the X-axis, θ i ∈[0,2π]; Indicates the current density; V D It represents the voltage provided to the circuit at the port; l represents the voltage integral line on the port surface; Step 2-1, perform Galerkin method test, unknown quantity expansion, and vector identity transformation on the field-circuit coupling equations; Step 2-2, substitute the numerical flux of field-circuit coupling shown in the following formula into the result of step 2-1, In the formula, e n Represents the unit external normal vector of the face; represents intrinsic impedance; Y = 1 / Z represents intrinsic admittance; P e , P h Represent the electric field and magnetic field respectively; the "+" sign in the upper right corner indicates the relevant information of the adjacent body, and no sign indicates the relevant information of the main body; J represents the current density; And order The field-circuit coupling equations in a compact format are obtained as the following matrix equation: The matrix elements are: In the formula, represent the test basis function and the expanded basis function of the electric field respectively; Respectively represent the test basis function and the expanded basis function of the magnetic field; l J Indicates the direction of current density; e l represents the direction of electric field integration; Step 2-3, use the Newton iteration method to solve the above equation (1.6) to form the DGTD semi-discrete form: In the formula, the influence of the space electromagnetic field on the field-path coupling area is considered, that is, the first term on the right side of the equation, denote the electric field and magnetic field in space respectively; Step 2-4, the DGTD semi-discrete form is abbreviated as: In the formula, u is the unknown quantity to be solved; Step 2-5, expand the unknown quantity u to be solved using Taylor series, and the expansion result is as follows: Where n is the order of Taylor expansion, which is also the order of ADER; The DG-FETD formula with n-order ADER scheme is obtained, which can be abbreviated as: Step 2-6, use equation (1.10) to solve equation (1.7) to obtain the values ​​of the four variables of electric field, magnetic field, voltage, and current density at the port; Step 3, use the coarse model to extract parameters of the response of the fine model, and update the mapping matrix between the coarse model and the fine model, calculate the residual vector of the space mapping algorithm, and the incremental step of the fine model design value, and solve to obtain the new design value of the fine model, and then determine whether the design value of the fine model satisfies the field-circuit coupling equation group. If not, repeat step 3, otherwise execute the next step; Step 4, the voltage information in the fine model design value is transmitted to the PIN tube, and the semiconductor transport characteristics at this moment are obtained; Step 5, considering the influence of the electric field and magnetic field at the port on the spatial electromagnetic field, solving the spatial electromagnetic field equations, and thereby analyzing the insertion loss and shielding effectiveness of the energy selective surface.

2. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 1 is characterized in that: The rough model described in step 2 adopts the semiconductor device equivalent circuit model, and its volt-ampere characteristic equation is: In the formula, I0 represents the reverse saturation current of the diode, q represents the unit charge, and k b represents the Boltzmann constant, T represents the temperature, V D Indicates the voltage provided to the circuit at the port; The detailed model adopts the real physical model of semiconductor devices, and its volt-ampere characteristic equation is: In the formula, n, p, represent the electron concentration, hole concentration and electric potential respectively, D n , D p are the diffusion coefficients of electrons and holes, μ n , μ p represent the mobility of electrons and holes respectively, E represents the electric field formed by the potential difference, and J n , J n They represent the diffusion current density of electrons and holes respectively, and J represents the total current density, which is the sum of the displacement current and the diffusion current density.

3. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 1 is characterized in that: In step 3, the mapping matrix between the coarse model and the fine model is updated according to the following update rules: In the formula, i represents the number of mappings, i = 1, 2, 3, ..., when i = 1, the mapping matrix between the coarse model and the fine model is B 1 =I; The calculation formula of the residual vector of the space mapping algorithm is: Where P(g) represents the parameter extraction of the fine model response using the coarse model, X c * represents the solution obtained by substituting the rough model volt-ampere characteristic equation into the field-circuit coupling equation group, f (i) is the residual vector of the i-th mapping; The calculation formula of the incremental step length of the fine model design value is: h (i) =-(B (i) ) -1 f (i) (1.15) In the formula, h (i) is the incremental step size of the i-th mapping; The design value of the new fine model is obtained by solving: In the formula, Design value of the fine model for the i-th mapping.

4. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 3 is characterized in that: The specific process of judging whether the design value of the fine model satisfies the field-circuit coupling equations in step 2 and step 3 includes: Step 3-1, passing the voltage value solved by the coarse model to the fine model to solve the current density; Step 3-2, calculate the difference between the current density solved by the coarse model and the current density solved by step 3-1. If the difference is within the preset allowable range, it indicates that the design value of the fine model satisfies the field-circuit coupling equation group, otherwise it indicates that it does not satisfy it.

5. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 4 is characterized in that: The current density obtained in step 3-1 and the semiconductor transport characteristics obtained in step 4 at this moment are obtained by solving the transient model equation of the PIN tube. The transient model equation of the PIN tube includes: Normalized Poisson equation: Normalized electron current density equation: Normalized hole current density equation: Normalized electron current continuity equation: Normalized hole current continuity equation: Normalized compound rate model: Among them, equations (1.17), (1.20) and (1.21) characterize the semiconductor transport properties; Where N represents the net doping concentration, τ n , τ n Represent the lifetime of electrons and holes respectively, G and R represent the generation and recombination terms of carriers.

6. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 5 is characterized in that: The specific process of solving the transient model equation of the PIN tube includes: (1) Using the backward Euler method, we perform time differentiation on equations (1.17), (1.20) and (1.21) respectively, and obtain: In the formula, the superscript t represents the value at the current moment, and t-1 represents the value at the previous moment; (2) Perform Newton iteration on equations (1.23) to (1.25) to obtain: in, Among them, the avalanche generation term G is: In the formula, α n , α p are the ionization coefficients of electrons and holes, respectively: Where, T is the temperature inside the PIN tube at the current moment; T ref is the initial temperature; A n ,B n ,C n ,D n and A p ,B p ,C p ,D p is a constant; E ||,n Represents the electric field parallel to the direction of electron movement; E ||,p represents the electric field parallel to the direction of hole motion; (3) Newton iteration is performed on equation (1.26). In particular, the avalanche generation term G is solved using the Gummel model.

7. The efficient field-circuit collaborative simulation method based on space mapping technology according to claim 6 is characterized in that: The step 5 of solving the spatial electromagnetic field equations specifically includes: The space electromagnetic field equations include: Step 5-2, perform the same Galerkin method test, unknown quantity expansion, and vector identity transformation on equations (1.33) and (1.34) as the field-circuit coupling equations to obtain the matrix equation: Step 5-2, use equation (1.12) to solve equations (1.35) and (1.36).

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