Plasma processing device and working method

Abstract

The present invention discloses a plasma processing device and a working method, including: a vacuum reaction chamber, a first opening is provided on the side wall of which; a base is located at the bottom of the reaction chamber and is used to carry a substrate; a gas shower head is located at the top of the reaction chamber and is arranged opposite to the base; a liner is located on the inner side of the side wall of the reaction chamber, and the liner is provided with a second opening, and the second opening is arranged opposite to the first opening for the substrate to enter and exit the reaction chamber; a grounding ring is arranged at the periphery of the base and is connected to the liner; a conductive shielding component is used to shield the second opening, and a radio frequency loop is formed between the gas shower head, the top of the reaction chamber, the liner, the conductive shielding component and the grounding ring; a first driving device drives the conductive shielding component to move up and down to shield or open the second opening. The present invention sets a conductive shielding component to shield the gap at the liner, ensure the integrity of the liner, and make the radio frequency loop uniform.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a plasma processing device and a working method. Background Art

[0002] Plasma processing equipment introduces reaction gas containing appropriate etchant or deposition source gas into a vacuum reaction chamber, and then applies radio frequency energy to the reaction chamber to dissociate the reaction gas to generate plasma, which is used to process the surface of the substrate placed in the reaction chamber. The side wall of the reaction chamber is provided with an opening for the substrate to enter and exit. When the radio frequency loop flows along the side wall of the reaction chamber, it will bypass the opening and form a Figure 1 The "saddle-shaped" structure shown causes an uneven RF loop and uneven distribution of plasma throughout the substrate, which in turn results in a processing rate at the substrate facing the liner opening being different from that at other parts of the substrate. Summary of the invention

[0003] The object of the present invention is to provide a plasma processing device and a working method to solve the problem of uneven radio frequency circuit.

[0004] In order to achieve the above object, the present invention provides a plasma processing device, comprising:

[0005] A vacuum reaction chamber, with a first opening on its side wall;

[0006] A base, located at the bottom of the reaction chamber, for supporting the substrate;

[0007] A gas shower head is located at the top of the reaction chamber and is arranged opposite to the base;

[0008] An inner liner is located on the inner side of the side wall of the reaction chamber, and the inner liner is provided with a second opening, which is arranged opposite to the first opening for allowing a substrate to enter and exit the reaction chamber;

[0009] A grounding ring, disposed on the periphery of the base and connected to the lining;

[0010] A conductive shielding component is used to shield the second opening, and a radio frequency loop is formed between the gas shower head, the top of the reaction chamber, the liner, the conductive shielding component and the grounding ring;

[0011] The first driving device is used to drive the conductive shielding component to move up and down to shield or open the second opening.

[0012] Optionally, the conductive shielding component is an arc-shaped structure with a convex outer side and a concave inner side.

[0013] Optionally, the conductive shielding component is sheet-shaped and completely shields the second opening when it moves to a set shielding position.

[0014] Optionally, the conductive shielding component includes a plurality of first baffles, and a first through groove is provided between adjacent first baffles; the portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; when moved to the shielding position, the conductive shielding component partially shields the second opening through the first baffles, and the first baffles are in conductive contact with the upper portion of the lining and the lower portion of the lining.

[0015] Optionally, the lining includes a plurality of second gear bars, and second through grooves are provided between adjacent second gear bars.

[0016] Optionally, the width of the first bars of the conductive shielding component is the same as the width of the second bars of the liner, and the spacing between adjacent first bars is the same as the spacing between adjacent second bars.

[0017] Optionally, the portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; the lining is an annular structure, and the outer diameter of the lower portion of the lining is equal to the outer diameter of the upper portion of the lining; the conductive shielding component includes a longitudinal first shielding structure, and when moved to the shielding position, the first shielding structure is in conductive contact with the outer side of the upper portion of the lining and the outer side of the lower portion of the lining.

[0018] Optionally, the conductive shielding component comprises a first longitudinal shielding structure and a second transverse shielding structure, so that the longitudinal cross-section of the conductive shielding component is L-shaped.

[0019] Optionally, the portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; the lining is an annular structure, and the outer diameter of the lower portion of the lining is smaller than the outer diameter of the upper portion of the lining;

[0020] When the conductive shielding component moves to the shielding position, the first shielding structure is in conductive contact with the outer side of the upper part of the lining, and the second shielding structure is in conductive contact with the outer side of the lower part of the lining;

[0021] Alternatively, the first shielding structure is in conductive contact with the outer side of the upper portion of the lining, and the second shielding structure is in conductive contact with the lower end of the lower portion of the lining;

[0022] Alternatively, the first shielding structure is in conductive contact with the lower end of the upper portion of the lining, and the second shielding structure is in conductive contact with the lower end of the lower portion of the lining.

[0023] Optionally, a conductive gasket is provided on the contact surface between the lining and the conductive shielding component.

[0024] Optionally, a conductive coil spring is arranged along the circumferential direction on the contact surface between the lining and the conductive shielding component.

[0025] Optionally, the lower end of the lining has a transverse structure extending laterally toward the base; the grounding ring is arranged at the interval between the transverse structure and the base; the grounding ring is arranged around the periphery of the base and is electrically isolated from the base.

[0026] Optionally, the grounding ring includes a middle grounding ring and a lower grounding ring; the middle grounding ring is located below the confinement ring, the confinement ring is located between the lateral structure of the liner and the base, the lower grounding ring is located below the middle grounding ring and is electrically isolated from the base, the lateral structure of the liner, the middle grounding ring and the lower grounding ring are electrically connected in sequence, and the lower grounding ring is further grounded.

[0027] Optionally, it further includes: a moving ring located between the liner and the gas shower head; and a second driving device for driving the moving ring to move up and down.

[0028] Optionally, it further includes: a radio frequency power source electrically connected to one of the gas shower head or the base; and a bias radio frequency power source electrically connected to the base.

[0029] Optionally, a connector is provided on the liner to electrically connect the liner to the reaction chamber.

[0030] Optionally, the connecting member is a conductive screw.

[0031] Optionally, the upper end of the liner has an extension structure extending toward the inner wall of the reaction chamber, and the extension structure is hung between the top of the side wall of the reaction chamber and the top cover of the reaction chamber, so that the liner is conductively connected to the reaction chamber.

[0032] The present invention also provides a working method of a plasma processing device, comprising:

[0033] Providing plasma processing equipment;

[0034] A radio frequency power source is provided, which is electrically connected to one of the gas shower head or the base. The conductive shielding component is driven by the first driving device to move up and down to shield the second opening. When the conductive shielding component is moved to shield the second opening, a radio frequency loop is formed between the gas shower head, the liner, the conductive shielding component, and the grounding ring; a radio frequency electric field is formed between the gas shower head and the base, and the reaction gas introduced into the reaction chamber is dissociated into plasma to process the substrate.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] In the plasma processing arrangement provided by the present invention, a liner is provided on the inner side of the reaction chamber, and the liner is provided with a second opening, and the second opening is arranged corresponding to the first opening on the side wall of the reaction chamber, and a movable conductive shielding component is arranged in the reaction chamber, and the conductive shielding component is used to shield the second opening of the liner to ensure the integrity of the liner, so that a uniform radio frequency circuit is formed between the gas shower head, the top of the reaction chamber, the liner, the conductive shielding component and the grounding ring. In addition, when it is necessary to realize the transmission of the film, the first driving device is used to move the conductive shielding component downward to open the second opening, and the substrate is realized through the second opening and the first opening. In addition, since a uniform radio frequency circuit is formed between the gas shower head, the top of the reaction chamber, the liner, the conductive shielding component and the grounding ring, there is no electric field between the grounding ring and the side wall of the reaction chamber, so that the gas between the grounding ring and the side wall of the reaction chamber is not easy to be ignited (Light Up). BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a "saddle-shaped" radio frequency loop formed at the opening of the lining of the plasma processing equipment.

[0038] Figure 2 It is a schematic diagram of a plasma processing device of the present invention.

[0039] Figure 3 It is a schematic structural diagram of another plasma processing equipment of the present invention.

[0040] Figure 4 A schematic diagram of the structure of the conductive shielding component of the present invention.

[0041] Figure 5 It is a cross-sectional view of the lining and the conductive shielding component of Example 1 of the present invention.

[0042] Figure 6a This is a cross-sectional view of the lining and the conductive shielding component of Example 2 of the present invention during substrate etching.

[0043] Figure 6b It is a cross-sectional view of the lining and the conductive shielding component of Example 2 of the present invention.

[0044] Figure 6c It is a cross-sectional view of the liner and the conductive shielding component of Example 2 of the present invention before the substrate enters the reaction chamber and after it leaves the reaction chamber.

[0045] Figure 7 It is a cross-sectional view of the lining and the conductive shielding component of Example 3 of the present invention.

[0046] Figure 8It is a cross-sectional view of the lining and the conductive shielding component of Example 4 of the present invention.

[0047] Fig. 9 Another schematic diagram of the structure of the conductive shielding component of the present invention.

[0048] Fig.10 This is a flow chart of the working method of the plasma processing equipment of the present invention.

[0049] In the figure, 1-reaction chamber, 100-first opening, 2-lining, 21-second opening, 22-upper part of lining, 23-lower part of lining, 24-lateral structure, 25-longitudinal structure, 250-screw, 26-extension structure, 3-base, 4-gas shower head, 5-grounding ring, 51-middle grounding ring, 52-lower grounding ring, 6-restraint ring, 7-moving ring, 8-second driving device, 9-RF power source, 10-bias RF power source, 11-substrate, 12-conductive shielding component, 120-first baffle, 121-first shielding structure, 1211-first conductive member, 122-second shielding structure, 1221-second conductive member, 13-first driving device. DETAILED DESCRIPTION

[0050] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0051] like Figure 2As shown, the capacitively coupled plasma processing equipment provided by the present invention comprises: a vacuum reaction chamber 1 and a liner 2 arranged on the inner side of the side wall of the reaction chamber 1, the liner 2 is used to protect the reaction chamber 1 from being corroded by plasma, the liner 2 is conductively connected to the reaction chamber 1, and optionally, the liner 2 is a ring structure; a first opening 100 is arranged on the side wall of the reaction chamber 1, and a second opening 21 corresponding to the first opening 100 is arranged on the liner 2, and the substrate 11 can enter and exit the reaction chamber through the first opening 100 and the second opening 21 when being grasped by a robot. The liner 2 has a portion corresponding to the second opening 21, including an upper liner portion 22 located above the second opening 21 and a lower liner portion 23 located below the second opening 21; a base 3 located at the bottom of the reaction chamber 1, used to carry the substrate 11, and also serves as a lower electrode of the plasma processing device; a gas shower head 4 located at the top of the reaction chamber 1, used to transport the reaction gas into the reaction chamber 1, and also serves as an upper electrode of the plasma processing device, and is arranged opposite to the base 3; a grounding ring 5, which is arranged on the periphery of the base 3, is located The liner 2 and the base 3 are provided with a transverse structure 24 extending laterally toward the base 3 at the lower end of the liner 2. The grounding ring 5 surrounds the periphery of the base 3 and is arranged at the interval between the transverse structure 24 and the base 3, and is electrically isolated from the base 3. The grounding ring 5 includes a middle grounding ring 51 and a lower grounding ring 52. The middle grounding ring 51 is located below the constraint ring 6. The constraint ring 6 is located between the transverse structure 24 of the liner 2 and the base 3. The lower grounding ring 52 is located below the middle grounding ring 51 and is electrically isolated from the base 3. The transverse structure 24, The middle grounding ring 51 and the lower grounding ring 52 are electrically connected in sequence, and the lower grounding ring 52 is further grounded; the moving ring 7 is located between the liner 2 and the gas shower head 4, and is used to limit the movement range of the plasma; the second driving device 8 is used to drive the moving ring 7 to move up and down; the RF power source 9 is electrically connected to one of the gas shower head 4 or the base 3, and is used to generate a RF electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma; the bias RF power source 10 is electrically connected to the base 3, and is used to control the distribution of plasma energy.

[0052] In such Figure 2 In the embodiment shown, the longitudinal cross-section of the liner 2 is L-shaped, and is composed of a longitudinal structure 25 and a transverse structure 24; the longitudinal structure 25 is provided with a connector for conductively connecting the liner 2 to the reaction chamber 1, and in this embodiment, the connector is a conductive screw 250. Figure 3 In some other embodiments shown, the longitudinal cross-section of the liner 2 is Z-shaped, that is, in the aforementioned embodiment where the longitudinal cross-section is L-shaped, the upper end of the longitudinal structure 25 extends toward the inner wall of the reaction chamber 1 to form an extension structure 26, and the extension structure 26 is hung between the top of the side wall of the reaction chamber 1 and the top cover of the reaction chamber 1, so that the liner 2 is conductively connected to the reaction chamber 1.

[0053] The plasma device provided by the present invention further includes a conductive shielding component 12 and a first driving device 13. The conductive shielding component 12 is used to shield the second opening 21, so that a complete and uniform radio frequency loop is formed between the gas shower head 4, the top of the reaction chamber 1, the liner 2, the conductive shielding component 12 and the grounding ring 5. Optionally, the conductive shielding component 12 is an arc-shaped structure with a convex outer side and a concave inner side ( Figure 8 ), adapted to the inner shape of the liner 2, when in the shielding position, the arc-shaped conductive shielding component 12 can reduce the leakage of plasma from the second opening 21; optionally, the curvature of the conductive shielding component 12 is the same as that of the liner 2; when the substrate 11 moves in and out, the conductive shielding component 12 is located in the gap between the reaction chamber 1 and the liner 2. The first driving device 13 is used to drive the conductive shielding component 12 to move up and down to shield or open the second opening 21. Since a uniform radio frequency loop is formed between the gas shower head 4, the top of the reaction chamber 1, the liner 2 and the grounding ring 5, or the gas shower head 4, the reaction chamber 1, the liner 2, the conductive shielding component 12 and the grounding ring 5, there is no electric field between the grounding ring 5 and the side wall of the reaction chamber 1, so that the gas between the grounding ring 5 and the side wall of the reaction chamber 1 is not easy to be ignited (Light Up).

[0054] The conductive shielding member 12 may be in the form of a sheet, and when it moves to a set shielding position, it completely shields the second opening 21. The sheet-shaped conductive shielding member 12 can make the liner upper portion 22 and the liner lower portion 23 conductively contact, so that a conductive channel is formed between the gas shower head 4, the liner 2, the conductive shielding member 12, and the grounding ring 5.

[0055] like Figure 4 As shown, the conductive shielding component 12 may also include a plurality of first baffles 120, with first through slots provided between adjacent first baffles 120 to form a fence-like structure; each first baffle 120 can independently make the liner upper portion 22 and the liner lower portion 23 conductively contact each other, so that a conductive channel is formed between the gas shower head 4, the liner 2, the conductive shielding component 12, and the grounding ring 5. Optionally, the first baffles 120 are evenly arranged.

[0056] In the embodiment in which the conductive shielding component constitutes a fence-like structure, the lining is also set as a fence-like structure (not shown in the figure), that is: the lining includes a plurality of second baffles, which are evenly distributed along the circumference of the lining; and a second through groove is provided between adjacent second baffles. Optionally, each second baffle, for example, has a Z-shaped longitudinal cross-section, or has an L-shaped longitudinal cross-section and is provided with a conductive connector, and can independently form a conductive channel between the reaction chamber 1 and the grounding ring 5. Optionally, the width of the first baffle of the conductive shielding component is the same as the width of the second baffle of the liner; the spacing between adjacent first baffles is the same as the spacing between adjacent second baffles. The conductive shielding component and the liner of this example are both fence-like structures, and the first baffles cooperate with the second baffles to be evenly distributed throughout the circumference, so that the circumferential RF circuit can be uniform.

[0057] Embodiment 1:

[0058] like Figure 5 As shown, the outer diameter of the lining lower part 23 is equal to the outer diameter of the lining upper part 22. The conductive shielding component includes a longitudinal first shielding structure 121, and the inner side of the first shielding structure 121 is provided with a first conductive member 1211 located at the top and a second conductive member 1221 located at the bottom. When the conductive shielding component 12 moves to the shielding position, the first conductive member 1211 on the first shielding structure 121 is in conductive contact with the outer side of the lining upper part 22, and the second conductive member 1221 is in conductive contact with the outer side of the lining lower part 23, forming a radio frequency conductive channel at the second opening 21 of the liner 2.

[0059] Embodiment 2: Figure 6a is a schematic diagram of the position of using the conductive shielding component 12 to shield the second opening, that is, a schematic diagram when the conductive shielding component 12 is in the shielding position; Figure 6b It is a schematic diagram of the position of the conductive shielding component 12 when the substrate enters and exits the reaction chamber; Figure 6c FIG. 1 is a schematic diagram showing the position of the conductive shielding component 12 during the lifting process. Figure 6a-6c As shown, the outer diameter of the lower part 23 of the lining is smaller than the outer diameter of the upper part 22 of the lining. The conductive shielding component 12 includes a longitudinal first shielding structure 121 and a transverse second shielding structure 122, so that the longitudinal cross-section of the conductive shielding component 12 is L-shaped. The inner side surface of the first shielding structure 121 is provided with a first conductive member 1211, and the inner side surface of the second shielding structure 122 is provided with a second conductive member 1221. When the conductive shielding component 12 moves to the shielding position, the first conductive member 1211 is in conductive contact with the outer side of the upper part 22 of the lining, and the second conductive member 1221 is in conductive contact with the outer side of the lower part 23 of the lining, forming a radio frequency conductive channel at the second opening 21 of the lining 2.

[0060] Example 3: Figure 7As shown, the outer diameter of the lower part 23 of the lining is smaller than the outer diameter of the upper part 22 of the lining. The conductive shielding component 12 includes a longitudinal first shielding structure 121 and a transverse second shielding structure 122, so that the longitudinal cross-section of the conductive shielding component 12 is L-shaped. The inner side surface of the first shielding structure 121 is provided with a first conductive member 1211, and the upper surface of the second shielding structure 122 is provided with a second conductive member 1221. When the conductive shielding component 12 moves to the shielding position, the first conductive member 1211 is in conductive contact with the outer side of the upper part 22 of the lining, and the second conductive member 1221 is in conductive contact with the lower end of the lower part 23 of the lining, forming a radio frequency conductive channel at the second opening 21 of the lining 2.

[0061] Example 4: Figure 8 As shown, the outer diameter of the lower part 23 of the lining is smaller than the outer diameter of the upper part 22 of the lining. The conductive shielding component 12 includes a longitudinal first shielding structure 121 and a transverse second shielding structure 122, so that the longitudinal cross-section of the conductive shielding component 12 is L-shaped. A first conductive member 1211 is provided on the upper surface of the first shielding structure 121, and a second conductive member 1221 is provided on the upper surface of the second shielding structure 122. When the conductive shielding component 12 moves to the shielding position, the first conductive member 1211 is in conductive contact with the lower end of the upper part 22 of the lining, and the second conductive member 1221 is in conductive contact with the lower end of the lower part 23 of the lining, forming a radio frequency conductive channel at the second opening 21 of the lining 2.

[0062] The conductive shielding component 12 moves to the shielding position, and the conductive member can press the liner 2, so that the RF loop can flow evenly through the liner 2. In the above embodiments 1-4, the arrangement of the conductive member is not limited, and it can be continuously arranged along the circumference on the contact surface between the conductive shielding component 12 and the liner 2, or it can be intermittently arranged; the form of the conductive member is not limited, and it can be a conductive gasket, or a conductive coil spring.

[0063] In the process of the first driving device 13 driving the conductive shielding component 12 to move up and down, in order to prevent the conductive shielding component 12 and / or the conductive member from scratching the outer wall of the liner 2, thereby causing the problem of particulate matter contaminating the chamber, the first driving device 13 or other driving devices can also drive the conductive shielding component 12 to move left and right between the reaction chamber and the liner 2, that is, first drive the conductive shielding component 12 to move left (to prevent the conductive shielding component 12 and / or the conductive member from scratching the outer wall of the liner 2, thereby preventing the problem of particulate matter contaminating the chamber. Figure 4 For example), a certain gap is first left between the conductive part and the outer side of the lining 2, and then the conductive shielding component 12 is driven to move downward to open the second opening 21, so that the substrate 11 can enter and exit the reaction chamber 1; conversely, the conductive shielding component 12 is driven to move upward, and then the conductive shielding component 12 is driven to move rightward by a distance corresponding to the aforementioned gap, so that the conductive part of the conductive shielding component 12 is in close contact with the outer side of the lining 2, and the conductive shielding component 12 shields the second opening 21.

[0064] like Fig. 9As shown, the first driving device 13 may be a cylinder, a motor or a guide rail. The first driving device 13 and the conductive shielding component 12 may be connected via a plurality of connecting rods.

[0065] The present invention also provides a working method of a plasma processing device, comprising: providing a plasma processing device; providing a radio frequency power source 9, which is electrically connected to the gas shower head 4 or the base 3, and the conductive shielding component 12 is driven by the first driving device 13 to move up and down, and can shield the second opening 21. When the conductive shielding component 12 is moved to shield the second opening 21, a radio frequency loop is formed between the gas shower head 4, the liner 2, the conductive shielding component 12, and the grounding ring 5; a radio frequency electric field is formed between the gas shower head 4 and the base 3, and the reaction gas introduced into the reaction chamber 1 is dissociated into plasma to process the substrate 11.

[0066] like Fig.10 As shown, in the embodiment in which the conductive shielding member 12 can move left and right between the reaction chamber and the liner 2, taking the structure of the liner 2 and the conductive shielding member 12 described in Example 2 as an example, an etching process includes the following steps:

[0067] Step 1, such as Figure 6b As shown, the first opening 100 and the second opening 21 are open, and the conductive shielding component 12 is located between the liner lower portion 23 of the liner 2 and the side wall of the reaction chamber 1; at this time, the substrate 11 can be delivered from the first opening 100 and the second opening 21 to the base 3 in the reaction chamber 1;

[0068] Step 2, controlling the first driving device 13 to move the conductive shielding component 12 upward to a position as shown in FIG. Figure 6c As shown in the position; it can be seen that there is a gap between the conductive shielding member 12 and the upper lining 22 and the lower lining 23, and no scratches will occur during the movement;

[0069] Step 3, control the first driving device 13 or other driving devices to move the conductive shielding component 12 to the right until Figure 6a In the position shown, the second opening 21 is blocked, and the conductive member of the conductive shielding component 12 can press the liner 2 to form a conductive channel between the gas shower head 4, the liner 2, the conductive shielding component 12, and the grounding ring 5;

[0070] Step 4, plasma etches the substrate 11 on the base 3;

[0071] Step 5, after the etching is completed, the first driving device 13 or other driving devices are controlled to move the conductive shielding component 12 to the left. Figure 6c The position shown in the figure allows a gap to be left between the conductive shielding member 12 and the lining upper portion 22 and the lining lower portion 23;

[0072] Step 6, controlling the first driving device 13 to move the conductive shielding component 12 downward to the position as shown in FIG. Figure 6b The position shown; the first opening 100 and the second opening 21 are open, and the conductive shielding component 12 is located between the lower portion 23 of the lining 2 and the side wall of the reaction chamber 1; the substrate 11 is taken out from the base 3 in the reaction chamber 1 along the second opening 21 and the first opening 100 in sequence, and an etching process is completed.

[0073] To summarize, in order to address the problem that an opening is provided on the lining 2 of the reaction chamber of the plasma processing equipment, which makes the RF circuit uneven, the plasma processing equipment provided by the present invention is provided with a conductive shielding component 12 to shield the opening at the lining 2, so that the lining 2 is complete, the RF circuit is uniform, and the etching rate at the wafer is uniform; and a driving device is provided to drive the conductive shielding component 12 to move up and down to expose the opening for the substrate 11 to enter and exit.

[0074] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A plasma processing device, characterized in that: include: A vacuum reaction chamber, with a first opening on its side wall; A base, located at the bottom of the reaction chamber, for supporting the substrate; A gas shower head is located at the top of the reaction chamber and is arranged opposite to the base; An inner liner is located on the inner side of the side wall of the reaction chamber, and the inner liner is provided with a second opening, which is arranged opposite to the first opening, for allowing a substrate to enter and exit the reaction chamber; the lower end of the inner liner has a transverse structure extending transversely toward the direction where the base is located; A grounding ring is arranged at the interval between the transverse structure and the base; the grounding ring is arranged around the periphery of the base, is electrically isolated from the base, and is connected to the lining; A conductive shielding component is used to shield the second opening, and a radio frequency loop is formed between the gas shower head, the top of the reaction chamber, the liner, the conductive shielding component and the grounding ring; The first driving device is used to drive the conductive shielding component to move up and down to shield or open the second opening.

2. The plasma processing equipment according to claim 1, characterized in that The conductive shielding component is an arc-shaped structure with a convex outer side and a concave inner side.

3. The plasma processing equipment according to claim 1, characterized in that The conductive shielding component is sheet-shaped and completely shields the second opening when it moves to a set shielding position.

4. The plasma processing equipment according to claim 1, characterized in that The conductive shielding component includes a plurality of first baffles, and a first through groove is provided between adjacent first baffles; the portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; when moved to the shielding position, the conductive shielding component partially shields the second opening through the first baffles, and the first baffles are in conductive contact with the upper portion of the lining and the lower portion of the lining.

5. The plasma processing equipment according to claim 4, characterized in that The inner lining includes a plurality of second gear bars, and second through grooves are arranged between adjacent second gear bars.

6. The plasma processing equipment according to claim 5, characterized in that The width of the first bars of the conductive shielding component is the same as the width of the second bars of the liner, and the spacing between adjacent first bars is the same as the spacing between adjacent second bars.

7. The plasma processing apparatus according to claim 1, wherein: The portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; the lining is an annular structure, and the outer diameter of the lower portion of the lining is equal to the outer diameter of the upper portion of the lining; the conductive shielding component includes a longitudinal first shielding structure, and when moved to the shielding position, the first shielding structure is in conductive contact with the outer side of the upper portion of the lining and the outer side of the lower portion of the lining.

8. The plasma processing apparatus according to claim 1, wherein: The conductive shielding component comprises a first longitudinal shielding structure and a second transverse shielding structure, so that the longitudinal cross-section of the conductive shielding component is L-shaped.

9. The plasma processing apparatus according to claim 8, wherein: The portion of the lining corresponding to the second opening includes an upper portion of the lining located above the second opening and a lower portion of the lining located below the second opening; the lining is an annular structure, and the outer diameter of the lower portion of the lining is smaller than the outer diameter of the upper portion of the lining; When the conductive shielding component moves to the shielding position, the first shielding structure is in conductive contact with the outer side of the upper part of the lining, and the second shielding structure is in conductive contact with the outer side of the lower part of the lining; Alternatively, the first shielding structure is in conductive contact with the outer side of the upper portion of the lining, and the second shielding structure is in conductive contact with the lower end of the lower portion of the lining; Alternatively, the first shielding structure is in conductive contact with the lower end of the upper portion of the lining, and the second shielding structure is in conductive contact with the lower end of the lower portion of the lining.

10. The plasma processing equipment according to any one of claims 1 to 9, characterized in that: A conductive gasket is provided on the contact surface between the lining and the conductive shielding component.

11. The plasma processing device according to any one of claims 1 to 9, characterized in that: Conductive coil springs are arranged along the circumferential direction on the contact surface between the lining and the conductive shielding component.

12. The plasma processing apparatus according to claim 1, wherein: The grounding ring includes a middle grounding ring and a lower grounding ring; the middle grounding ring is located below the confinement ring, the confinement ring is located between the lateral structure of the liner and the base, the lower grounding ring is located below the middle grounding ring and is electrically isolated from the base, the lateral structure of the liner, the middle grounding ring and the lower grounding ring are electrically connected in sequence, and the lower grounding ring is further grounded.

13. The plasma processing apparatus according to claim 1, wherein: Also includes: a movable ring, located between the liner and the gas shower head; The second driving device is used to drive the moving ring to move up and down.

14. The plasma processing apparatus according to claim 1, wherein: Also includes: a radio frequency power source electrically connected to one of the gas showerhead or the base; The bias radio frequency power source is electrically connected to the base.

15. The plasma processing equipment according to claim 1 or 8, characterized in that: The inner liner is provided with a connector to electrically connect the inner liner to the reaction chamber.

16. The plasma processing apparatus according to claim 15, wherein: The connecting piece is a conductive screw.

17. The plasma processing equipment according to claim 1 or 8, characterized in that: The upper end of the liner has an extension structure extending toward the inner wall of the reaction chamber, and the extension structure is hung between the top of the side wall of the reaction chamber and the top cover of the reaction chamber, so that the liner is conductively connected to the reaction chamber.

18. A method for operating a plasma processing device, characterized in that: include: Providing a plasma processing device as described in any one of claims 1 to 17; A radio frequency power source is provided, which is electrically connected to one of the gas shower head or the base. The conductive shielding component is driven by the first driving device to move up and down to shield the second opening. When the conductive shielding component is moved to shield the second opening, a radio frequency loop is formed between the gas shower head, the liner, the conductive shielding component, and the grounding ring; a radio frequency electric field is formed between the gas shower head and the base, and the reaction gas introduced into the reaction chamber is dissociated into plasma to process the substrate.

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