A detection device, a detection method and a wafer etching equipment

Abstract

This invention discloses a detection device, a detection method, and a wafer etching apparatus, relating to the field of plasma etching technology. The method ensures proper connection between the detection device and the reaction chamber of the wafer etching apparatus, preventing wafer damage due to incomplete connection. The detection device is applied to the wafer etching apparatus, which has a detection window on its side wall, containing a light-transmitting detection window. The detection device includes a light receiving and transmitting component, a position detection component, and a control component. The detection method utilizes the detection device described above. The detection device provided by this invention improves wafer yield.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of plasma etching technology, and particularly relates to a detection device, a detection method and a wafer etching equipment. BACKGROUND

[0002] With the wide application of plasma etching technology and the continuous improvement of the precision of semiconductor devices, the control requirement of the etching process is higher and higher, and the control of the etching process depends on the judgment of the etching endpoint. At present, the commonly used method for judging the etching endpoint is to use a monochromator to measure the wave peak or wavelength of the emission spectrum generated by the plasma in the reaction chamber, and then to judge the corresponding etching endpoint. This method is widely used in etching, evaporation, oxidation or nitridation processes.

[0003] However, when the plasma etching equipment is maintained and repaired, the optical cable needs to be separated from the plasma etching reaction chamber. If the optical cable is not in complete contact with the plasma etching reaction chamber when the equipment maintenance and repair are completed, the wafer will be over-etched, resulting in damage to the wafer. SUMMARY

[0004] The purpose of the present application is to provide a detection device, a detection method and a wafer etching equipment to ensure the connection of the detection device and the reaction chamber of the wafer etching equipment, and to prevent the damage of the wafer due to incomplete connection.

[0005] In order to achieve the above purpose, the present application provides a detection device applied to a wafer etching equipment, wherein a detection window is arranged on the side wall of the wafer etching equipment, and a light-transmitting detection window is arranged in the detection window. The detection device comprises a light receiving and transmitting assembly, a position detection assembly and a control assembly.

[0006] The first end of the light receiving and transmitting assembly extends into the detection window, and is used for receiving the light signal generated by the plasma in the wafer etching equipment, and sending the processed light signal to the control assembly.

[0007] The position detection assembly is arranged in the detection window, and is used for fixing the light receiving and transmitting assembly, and detecting the relative position relationship between the first end of the light receiving and transmitting assembly and the light-transmitting detection window, and sending the detection signal to the control assembly.

[0008] The control assembly is used for determining the etching state of the wafer etching equipment according to the detection signal and the processed light signal.

[0009] Compared with existing technologies, the wafer inspection apparatus provided by this invention, by setting a position detection component within the inspection window, can, on the one hand, fix the light receiving and transmitting component, and on the other hand, detect the relative positional relationship between the first end of the light receiving and transmitting component and the light-transmitting inspection window, and send the detection signal to the control component. Then, the control component determines to start the wafer etching equipment when the detection signal meets preset activation information, and determines to stop the wafer etching equipment when the detection signal does not meet the preset activation information. The preset activation information indicates that the first end of the light receiving and transmitting component is fully connected to the light-transmitting inspection window. This avoids the situation where the first end of the light receiving and transmitting component is not fully connected to the light-transmitting inspection window, which could lead to inaccurate or incomplete endpoint detection, resulting in over-etching of the wafer. Furthermore, the wafer inspection apparatus provided by this invention also includes a light receiving and transmitting component, the first end of which extends into the inspection window to receive the light signal generated by the plasma within the wafer etching equipment, and after processing the light signal, sends it to the control component. When the control component determines the first end of the light receiving and transmitting component and the light transmission detection window based on the detection signal, the control component determines the etching state of the wafer etching equipment based on the light signal processed by the light receiving and transmitting component, so as to improve the wafer yield and increase production.

[0010] The present invention also provides a detection method. The detection method includes:

[0011] The system receives a detection signal sent by a position detection component, the detection signal being used to characterize the relative positional relationship between the first end of the detection light receiving and transmitting component and the light-transmitting detection window.

[0012] Based on the detection signal, if the relative positional relationship between the first end of the light receiving and transmitting component and the light-transmitting detection window satisfies a preset positional relationship, the wafer etching equipment is controlled to process the wafer. The light receiving and transmitting component is used to receive and process the light signal generated by the plasma within the wafer etching equipment during the wafer processing.

[0013] It receives the processed optical signal sent by the optical receiving and transmitting component.

[0014] The etching state of the wafer etching equipment is controlled based on the processed optical signal.

[0015] Compared with the prior art, the beneficial effects of the detection method provided by the present invention are the same as those of the detection device described in the above technical solution, and will not be repeated here.

[0016] The present invention also provides a wafer etching apparatus, wherein a detection window is provided on the side wall of the wafer etching apparatus, and a light-transmitting detection window is provided inside the detection window, characterized in that it includes the detection device described above or any of the above possible implementations, and the detection device is disposed close to the light-transmitting detection window.

[0017] Compared with the prior art, the beneficial effects of the wafer etching equipment provided by the present invention are the same as those of the detection device described in the above technical solution, and will not be repeated here. Attached Figure Description

[0018] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0019] Figure 1 An example is shown in the schematic diagram illustrating the application state of the detection device provided in the embodiment of the present invention;

[0020] Figure 2 A schematic diagram illustrating the connection state of a portion of the detection device provided in an embodiment of the present invention is shown.

[0021] Figure 3 A flowchart of a detection method provided by an embodiment of the present invention is shown. Detailed Implementation

[0022] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0023] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0025] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0026] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0027] In semiconductor manufacturing processes, preventative maintenance and cleaning of wafer etching equipment are required periodically. This necessitates separating the inspection unit from the wafer etching equipment, and then reconnecting them after cleaning. However, if the endpoint inspection unit and wafer etching equipment are not properly connected, it can lead to inaccurate or malfunctioning endpoint detection, impacting wafer yield.

[0028] To address the aforementioned problems, embodiments of the present invention provide a detection device applied to a wafer etching apparatus. The detection device provided by these embodiments can determine the connection status between the detection device and the wafer etching apparatus, preventing situations where insufficient connection between the detection device and the wafer etching apparatus leads to over-etching or wafer defects.

[0029] The aforementioned wafer etching equipment can be a capacitively coupled plasma processing device; alternatively, it can be an inductively coupled plasma processing device, a microwave plasma processing device, or any other type of plasma processing device. An example of a wafer etching device being an inductively coupled plasma processing device will be described below.

[0030] Figure 1 An example is shown in the schematic diagram illustrating the application state of the detection device provided in the embodiment of the present invention. Figure 2 A schematic diagram illustrating the connection state of a portion of the detection device provided in an embodiment of the present invention is shown. For example... Figure 1 and Figure 2As shown, a detection window 102 is provided on the side wall of the wafer etching equipment 100, and a light-transmitting detection window 1021 is provided inside the detection window 102. The detection device 110 includes: a light receiving and transmitting component 1101, a position detection component 1102, and a control component 1103.

[0031] like Figure 1 and Figure 2 As shown, the first end of the aforementioned optical receiving and transmitting component 1101 extends into the detection window 102 to receive the optical signal generated by the plasma within the wafer etching equipment 100. After processing the optical signal, it is sent to the control component 1103. The control component 1103 determines the etching state of the wafer based on the processed optical signal. When the etching endpoint is determined, it controls the wafer etching equipment to stop etching to prevent over-etching or wafer damage.

[0032] As one possible implementation, such as Figure 1 and Figure 2 As shown, the aforementioned optical receiving and transmitting assembly 1101 may include an optical cable 1101A and a monochromator 1101B. The first end of the optical cable 1101A extends into the detection window 102 to receive light transmitted through the light-transmitting detection window 1021. The second end of the optical cable 1101A is connected to the first end of the monochromator 1101B, which detects the wavelength of the light transmitted by the optical cable 1101A. Specifically, after receiving the light transmitted by the optical cable 1101A, the first end of the monochromator 1101B processes the light and outputs the wavelength information.

[0033] In some embodiments, such as Figure 1 and Figure 2 As shown, the aforementioned optical receiving and transmitting component 1101 may further include a photoelectric converter 1101C. The photoelectric converter 1101C is connected to the second terminal of the monochromator 1101B. The photoelectric converter 1101C converts the optical signal into an electrical signal and sends the electrical signal to the control component 1103. After receiving the electrical signal sent by the photoelectric converter 1101C, the control component 1103 determines the endpoint of the etching reaction based on the electrical signal corresponding to different wavelengths, thereby preventing over-etching of the wafer and improving wafer yield.

[0034] like Figure 1 and Figure 2As shown, the aforementioned position detection component 1102 is disposed within the detection window 102. It is used to fix the light receiving and transmitting component 1101 and to detect the relative positional relationship between the first end of the light receiving and transmitting component 1101 and the light-transmitting detection window, sending the detection signal to the control component 1103. The control component 1103 determines the relative positional relationship between the first end of the light receiving and transmitting component 1101 and the light-transmitting detection window 1021 based on the detection signal. If the first end of the light receiving and transmitting component 1101 is not sufficiently connected to the light-transmitting detection window 1021, the control component 1103 controls the wafer etching equipment 100 to generate an internal interlock and stop working. This is to prevent the detection device 110 from failing to detect the etching endpoint in a timely or accurate manner, resulting in over-etching or defective wafers.

[0035] As one possible implementation, such as Figure 1 and Figure 2 As shown, the position detection component 1102 may include a position sensor 1102A, which is located within the detection window 102 and close to the light transmission detection window 1021. This position sensor 1102A is used to detect the relative positional relationship between the first end of the light receiving and transmitting component 1101 and the light transmission detection window 1021. The control component 1103 controls the etching state of the wafer based on the detection result of the position sensor 1102A. It should be understood that the position sensor 1102A here can be a photoelectric sensor, or an infrared sensor, etc., and is not limited to these.

[0036] In some embodiments, such as Figure 1 and Figure 2 As shown, the position detection assembly 1102 may further include a support portion 1102B, which is fixedly disposed on the inner wall of the detection window 102 and connected to the position sensor 1102A. The support portion 1102B is used to fix the first end of the light receiving and transmitting assembly 1101 that extends into the detection window 102. Specifically, the light-transmitting detection window 1021, the position sensor 1102A, and the support portion 1102B are sequentially arranged along the extending direction of the inner wall of the detection window 102. The support portion 1102B can also be used to fix the position of the position sensor 1102A.

[0037] In practical applications, the support units are located on both sides of the light-transmitting detection window and connected to the inner wall of the detection window, forming a receiving cavity between the support units. After maintenance and cleaning of the wafer etching equipment, the first end of the light receiving and transmitting component is inserted into the aforementioned receiving cavity. At this time, when the sensor located between the support units and the detection window senses the insertion of the first end of the light receiving and transmitting component, the sensor transmits the detection signal to the control component for processing.

[0038] like Figure 1 and Figure 2As shown, the control component 1103 is used to determine the etching state of the wafer etching equipment based on the detection signal and the processed optical signal. This is to avoid over-etching or defective wafers and reduce production costs.

[0039] As one possible implementation, such as Figure 1 and Figure 2 As shown, the control component 1103 includes a controller 1103A, which is connected to the optical receiving and transmitting component 1101 and the position detection component 1102. It should be understood that the controller 1103A can be a central processing unit (CPU), a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof.

[0040] like Figure 1 As shown, this embodiment of the invention also provides a wafer etching apparatus 100. A detection window 102 is provided on the side wall of the wafer etching apparatus 100, and a light-transmitting detection window 1021 is disposed within the detection window 102. The wafer etching apparatus 100 includes the aforementioned detection device 110, which is disposed near the light-transmitting detection window 1021. The light-transmitting detection window 1021 is made of glass or quartz. It should be noted that, in order to improve light transmittance, the light-transmitting detection window 1021 should be made of transparent and colorless glass or quartz.

[0041] In practical applications, such as Figure 1As shown, when the wafer etching equipment 100 is an inductively coupled plasma (ICP) processing device, the wafer etching equipment 100 has a reaction chamber 101 for forming plasma and etching the wafer. The reaction chamber 101 has a first sidewall 101A and a second sidewall 101B. The first sidewall 101A has a slit 1011 for wafer entry and exit, and the second sidewall 101B has a detection window 102. A light-transmitting detection window 1021 is provided inside the detection window 102, and a detection device 110 is positioned close to the light-transmitting detection window 1021. A top cover 103 is provided on the upper part of the reaction chamber 101, forming a sealed space. A gas supply device (not shown in the figure) for providing reaction gas is provided in the middle of the top cover 103. An electrostatic chuck 104 and a base 105 are provided inside the reaction chamber 101, with the base 105 located below the electrostatic chuck 104. A vacuum pump 106 is also connected to the lower part of the reaction chamber 101 to maintain the vacuum state inside the reaction chamber.

[0042] The beneficial effects of the wafer etching equipment provided in this embodiment of the invention are the same as those of the detection device described above, and will not be repeated here.

[0043] Figure 3 A flowchart of a detection method provided by an embodiment of the present invention is shown below. Figure 3 As shown, this detection method is applied to the aforementioned detection equipment. This method is used to detect the etching endpoint of a wafer when the connection between the detection equipment and the wafer etching equipment is confirmed.

[0044] like Figure 3 As shown, the detection method provided in this embodiment of the invention includes:

[0045] First, the control component receives the detection signal sent by the position detection component. This detection signal characterizes the relative positional relationship between the first end of the detection light receiving and transmitting component and the light-transmitting detection window.

[0046] Then, based on the detection signal, the control component determines that the relative positional relationship between the first end of the light receiving and transmitting component and the light-transmitting detection window satisfies a preset positional relationship, and then controls the wafer etching equipment to process the wafer. The light receiving and transmitting component is used to receive and process the light signal generated by the plasma within the wafer etching equipment during the wafer processing.

[0047] In practical applications, the above-mentioned process of processing optical signals can be as follows: when the optical receiving and transmitting component includes an optical cable, a monochromator, and a photoelectric converter, the optical cable is used to receive the optical signal generated in the reaction cavity of the wafer etching equipment and transmit the optical signal to the monochromator. Then, the photoelectric converter connected to the monochromator converts the optical signal into an electrical signal, thus completing the processing of the optical signal.

[0048] Then, the control component receives the processed optical signal sent by the optical receiving and transmitting component.

[0049] Finally, the control component controls the etching state of the wafer etching equipment based on the processed optical signal.

[0050] In one possible implementation, after the control component receives the detection signal sent by the position detection component, the detection method may further include:

[0051] If the control component determines, based on the detection signal, that the relative position between the first end of the light receiving and transmitting component and the light transmission detection window does not meet the preset positional relationship, it adjusts the relative position between the first end of the light receiving and transmitting component and the light transmission detection window. At this time, the wafer etching equipment can generate an internal interlock, stopping the equipment from operating to protect the wafer and reduce damage to the wafer.

[0052] The beneficial effects of the detection method provided in this embodiment of the invention are the same as those of the detection device described above, and will not be repeated here.

[0053] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0054] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A detection device, characterized in that, This device is used in wafer etching equipment, wherein a detection window is provided on the side wall of the wafer etching equipment, and a light-transmitting detection window is provided inside the detection window; the detection device includes: a light receiving and transmitting component, a position detection component, and a control component; The first end of the optical receiving and transmitting component extends into the detection window to receive the optical signal generated by the plasma in the wafer etching equipment, and after processing the optical signal, sends it to the control component. The position detection component is disposed within the detection window and is used to fix the light receiving and transmitting component, as well as to detect the relative positional relationship between the first end of the light receiving and transmitting component and the light-transmitting detection window, and send the detection signal to the control component. The control component is used to determine the etching state of the wafer etching equipment based on the detection signal and the processed optical signal; The position detection component includes a position sensor located within the detection window and close to the light transmission detection window, for detecting the relative positional relationship between the first end of the light receiving and transmitting component and the light transmission detection window; The position detection component also includes a support portion, which is fixedly disposed on the inner wall of the detection window and connected to the position sensor, for fixing the first end of the light receiving and transmitting component that extends into the detection window; The control component determines the relative positional relationship between the first end of the light receiving and transmitting component and the light transmission detection window through the detection signal. When the first end of the light receiving and transmitting component and the light transmission detection window are not fully connected, the control component controls the wafer etching equipment to generate an internal interlock and stop working.

2. The detection device according to claim 1, characterized in that, The optical receiving and transmitting assembly includes an optical cable and a monochromator; The first end of the optical cable extends into the detection window to receive light transmitted through the light-transmitting detection window; the second end of the optical cable is connected to the first end of the monochromator, which is used to detect the wavelength of the light transmitted by the optical cable.

3. The detection device according to claim 2, characterized in that, The optical receiving and transmitting component further includes a photoelectric converter, which is connected to the second end of the monochromator and is used to convert the optical signal into an electrical signal and send the electrical signal to the control component.

4. The detection device according to claim 1, characterized in that, The control component includes a controller, which is connected to the optical receiving and transmitting component and the position detection component.

5. A detection method, characterized in that, An instrument for use in wafer etching equipment, wherein a detection window is provided on the side wall of the wafer etching equipment, and a light-transmitting detection window is provided within the detection window; the detection method includes: The system receives a detection signal sent by a position detection component, the detection signal being used to characterize the relative positional relationship between the first end of the detection light receiving and transmitting component and the light-transmitting detection window; the position detection component includes a position sensor located within the detection window and close to the light-transmitting detection window; the position detection component also includes a support portion fixedly disposed on the inner wall of the detection window and connected to the position sensor, used to fix the first end of the light receiving and transmitting component extending into the detection window; Based on the detection signal, if the relative positional relationship between the first end of the light receiving and transmitting component and the light transmission detection window satisfies a preset positional relationship, the wafer etching equipment is controlled to process the wafer; wherein, the light receiving and transmitting component is used to receive the light signal generated by the plasma in the wafer etching equipment during the wafer processing process, and to process the light signal. Receives the processed optical signal sent by the optical receiving and transmitting component; The etching state of the wafer etching equipment is controlled based on the processed optical signal. After receiving the detection signal sent by the position detection component, the detection method further includes: if, based on the detection signal, it is determined that the relative positional relationship between the first end of the light receiving and transmitting component and the light transmission detection window does not meet the preset positional relationship, adjusting the relative position between the first end of the light receiving and transmitting component and the light transmission detection window.

6. A wafer etching apparatus, wherein a detection window is provided on the side wall of the wafer etching apparatus, and a light-transmitting detection window is provided within the detection window, characterized in that, The detection device includes any one of claims 1 to 4, wherein the detection device is disposed near the light-transmitting detection window.

7. The wafer etching apparatus according to claim 6, characterized in that, The light transmission detection window is made of glass or quartz.

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