Packaging structure and manufacturing method thereof

Abstract

The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes a substrate with a notch and a first micro-electromechanical system chip, a first intermediate chip, a second micro-electromechanical system chip and a first cover plate formed on the substrate in sequence. The lower surface of the first micro-electromechanical system chip has a first sensor or a micro-actuator. The upper surface of the second micro-electromechanical system chip has a second sensor or a micro-actuator. The first intermediate chip has a substrate through hole and includes a signal conversion unit, a logic operation unit, a control unit or a combination thereof. The packaging structure includes at least one of the first sensor and the second sensor.

Description

Technical Field

[0001] The invention relates to a packaging structure, and more particularly to a packaging structure with three-dimensional micro-electromechanical system chip stacking and a manufacturing method thereof. Background Art

[0002] Microelectromechanical system (MEMS) is a technology that combines microelectronics and mechanical engineering. MEMS technology enables many industrial devices to be miniaturized. A microelectromechanical device usually includes a microprocessor and at least one microsensor for obtaining external information.

[0003] For current MEMS devices, it is usually necessary to assemble multiple MEMS components in the same package structure and integrate the operation of these MEMS components. However, if two MEMS components are too close, their signals may interfere with each other, which will reduce the yield and reliability of the MEMS device.

[0004] On the other hand, in the packaging structure of MEMS devices, each MEMS element is usually independent and needs to be controlled by its own control chip. Furthermore, an additional control or computing unit is usually required to integrate or process signals from different MEMS elements. Therefore, the area of ​​the MEMS device is large, which is not conducive to the miniaturization of the packaging structure.

[0005] Therefore, in the art, there is still a need for a packaging structure and a manufacturing method of a MEMS device with high yield and high reliability. Summary of the invention

[0006] The embodiment of the present invention provides a method for manufacturing a packaging structure with a MEMS device, which can improve the yield and reliability of the MEMS device and can facilitate the miniaturization of the packaging structure.

[0007] One embodiment of the present invention discloses a packaging structure, comprising: a substrate having a recess; a first microelectromechanical system (MEMS) chip formed on the substrate, wherein the first MEMS chip has a substrate through-hole, the lower surface of the first MEMS chip has a first sensor or a microactuator, and the first sensor or the microactuator is located in the recess; a first intermediate chip formed on the first MEMS chip, wherein the first intermediate chip has a substrate through-hole, and the first intermediate chip includes a signal conversion unit, a logic operation unit, a control unit or a combination of the above; a second microelectromechanical system (MEMS) chip formed on the first intermediate chip, wherein the second MEMS chip has a substrate through-hole, the upper surface of the second MEMS chip has a second sensor or a microactuator, and the packaging structure includes at least one of the first sensor and the second sensor; and a first cover plate formed on the second MEMS chip, wherein the first cover plate provides a housing space, and the second sensor or the microactuator located on the upper surface of the second MEMS chip is located in the housing space.

[0008] Another embodiment of the present invention discloses a method for manufacturing a packaging structure, comprising: providing a substrate, wherein the substrate has a plurality of recesses; forming a plurality of first MEMS chips on the substrate, wherein each of the plurality of first MEMS chips has a substrate through hole, and the lower surface of each of the plurality of first MEMS chips has a first sensor or a microactuator, and the first sensor or the microactuator is located in one of the plurality of recesses; forming a plurality of first intermediate chips on the substrate, wherein each of the plurality of first intermediate chips is respectively formed on one of the plurality of first MEMS chips, wherein each of the plurality of first intermediate chips has a substrate through hole, and the plurality of first intermediate chips Each of the plurality of first intermediate chips includes a signal conversion unit, a logic operation unit, a control unit or a combination of the above; a plurality of second MEMS chips are formed on a plurality of first intermediate chips, wherein each of the plurality of second MEMS chips has a substrate through-hole, wherein the upper surface of each of the plurality of second MEMS chips has a second sensor or a microactuator, and wherein the packaging structure includes at least one of the first sensor and the second sensor; and a plurality of first cover plates are formed on the plurality of second MEMS chips, wherein each of the plurality of first cover plates provides a accommodating space, and the second sensor or microactuator located on the upper surface of each of the plurality of second MEMS chips is located in the accommodating space.

[0009] In the packaging structure with a MEMS device provided by an embodiment of the present invention, at least one intermediate chip is arranged between two vertically stacked MEMS chips. By increasing the distance between the two MEMS chips by the intermediate chip, the signal interference between the MEMS chips can be reduced. Therefore, the yield rate and reliability can be greatly improved, and it is conducive to the miniaturization of the packaging structure. In addition, in the packaging structure with a MEMS device provided by an embodiment of the present invention, more than three MEMS chips with different functions can be integrated in the same packaging structure without significantly increasing the area of ​​the packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0011] Figures 1A to 1F Schematic cross-sectional views of packaging structures at various stages of the process of some embodiments of the present invention;

[0012] Figure 2 Schematic cross-sectional views of packaging structures of other embodiments of the present invention;

[0013] Figure 3 Schematic cross-sectional views of packaging structures of other embodiments of the present invention;

[0014] Figure 4 Schematic cross-sectional views of packaging structures of other embodiments of the present invention;

[0015] Figure 5 Schematic cross-sectional views of packaging structures of other embodiments of the present invention;

[0016] Figure 6 Schematic cross-sectional views of packaging structures according to other embodiments of the present invention.

[0017] Figure Number:

[0018] 100: packaging structure; 101: opening; 102: substrate; 104: first cover plate; 105: notch; 106: second cover plate; 107: accommodating space; 109: third space; 110: first MEMS chip; 111: first microstructure; 114: substrate through hole; 120: first intermediate chip; 122: electrical connection component; 124: substrate through hole; 130: second MEMS chip; 131: second microstructure; 132: electrical connection component; 134: substrate through hole; 135: conductive pad; 140: third MEMS chip; 141: third microstructure; 142: electrical connection component; 144: substrate through hole; 151: molding compound layer; 152: molding compound layer; 153: molding compound layer; 161: first heavy division layer; 161a: first conductive component; 162: second redistribution layer; 162a: second conductive component; 163: third redistribution layer; 163a: third conductive component; 164: fourth redistribution layer; 164a: fourth conductive component; 171: electrical connection component; 172: electrical connection component; 173: electrical connection component; 174: electrical connection component; 180: bottom filler layer; 182: electrical connection component; 190: cutting process; 200: packaging structure; 220: second intermediate chip; 222: electrical connection component; 224: substrate perforation; 300: packaging structure; 320: third intermediate chip; 322: electrical connection component; 324: substrate perforation; 400: packaging structure; 500: packaging structure; 600: packaging structure. DETAILED DESCRIPTION

[0019] In order to make the above and other purposes, features and advantages of the present invention more clearly understood, the following is a detailed description of preferred embodiments with accompanying drawings. Furthermore, repeated reference symbols and / or words may be used in different examples of the present invention. These repeated symbols or words are for the purpose of simplification and clarity, and are not used to limit the relationship between the various embodiments and / or the appearance structures.

[0020] The present invention provides a packaging structure and a manufacturing method thereof. Figures 1A to 1F Schematic cross-sectional views of the package structure 100 at various stages of the process according to some embodiments of the present invention.

[0021] Please refer to Figure 1A , a substrate 102 having a plurality of notches 105 is provided. Then, a plurality of first MEMS chips 110 are formed on the substrate 102 corresponding to the positions of the notches 105. The material of the substrate 102 may include glass, polymer, semiconductor, metal or a combination thereof. A suitable substrate 102 may be selected according to the function of the first MEMS chip 110. For example, when the first MEMS chip 110 includes an optical sensor, the material of the substrate 102 may be transparent glass or polymer.

[0022] The first MEMS chip 110 may be formed by any suitable method. For example, a through hole may be formed in a semiconductor wafer by a lithography process, an etching process, a laser drilling process, a mechanical drilling process, or a combination thereof. Then, a conductive material is filled into the through hole to form a through-silicon via (TSV) 114. Then, a first microstructure 111 is formed on one of the surfaces of the semiconductor wafer. Then, the semiconductor wafer may be cut to form a plurality of first MEMS chips 110. In some embodiments, the formed first MEMS chip 110 may be bonded to a substrate 102. For example, the substrate 102 and the first MEMS chip 110 may be bonded together by a bonding agent applied to the upper surface of the substrate 102 or the lower surface of the first MEMS chip 110.

[0023] like Figure 1A As shown, the lower surface of each first MEMS chip 110 has a first microstructure 111, and each first MEMS chip 110 has a plurality of substrate through-holes 114. The first microstructure 111 may be a sensor or a microactuator. In one embodiment, the first microstructure 111 is a first sensor, and the first MEMS chip 110 has a sensing function. In another embodiment, the first microstructure 111 is a microactuator, and the first MEMS chip 110 has functions such as switching, deformation or movement. In order to simplify the description, the formation method and function of the first microstructure 111 are not described in detail herein. The conductive material that can be used to form the substrate through-hole 114 may include a metal (for example, copper, aluminum, silver, gold, tungsten, cobalt, nickel, titanium or tantalum), an alloy or a combination of the above.

[0024] Please refer to Figure 1A After bonding the substrate 102 and the first MEMS chip 110, a molding compound layer 151 is formed to cover the substrate 102 and the first MEMS chip 110. Then, the molding compound layer 151 is cured. Then, a first planarization process is performed, such as a chemical mechanical polishing process, to expose the upper surface of the first MEMS chip 110 and the upper surface of the substrate through-hole 114, and to make the upper surface of the first MEMS chip 110, the upper surface of the substrate through-hole 114, and the upper surface of the molding compound layer 151 coplanar, so as to facilitate the formation of the subsequent first redistribution layer 161. The molding compound layer 151 can provide a good supporting function and protect the first MEMS chip 110 from damage. The molding compound layer 151 may include a curable resin (e.g., a polyester resin, a vinyl ester resin, or an epoxy resin) or a combination thereof. The molding compound layer 151 may be cured by irradiation or heating.

[0025] Please refer to Figure 1B, a first redistribution layer 161 chip is formed on the first MEMS chip 110. Then, a plurality of first intermediate chips 120 are formed on the first redistribution layer 161. The position of the first intermediate chip 120 corresponds to the position of the first MEMS chip 110. The first redistribution layer 161 may include a stacked structure formed by a plurality of insulating layers and a plurality of first conductive components 161a formed in the stacked structure. In some embodiments, the first redistribution layer 161 may also include an electrical connection component 171 as needed to electrically connect the first intermediate chip 120 to the first conductive component 161a. In the present embodiment, the electrical connection component 171 is formed on the upper surface of the first redistribution layer 161. In other embodiments, the electrical connection component 171 is formed in the first redistribution layer 161 and is exposed from the upper surface of the first redistribution layer 161 or partially protrudes from the upper surface of the first redistribution layer 161. The first conductive component 161a may include a conductive line, a conductive via, or a conductive pad. The material of the insulating layer may include a resin (e.g., a polyimide resin or an epoxy resin), silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The electrical connection component 171 may include a conductive column or a conductive solder ball. The material of the first conductive component 161a may include a metal (e.g., copper, aluminum, silver, gold, tungsten, cobalt, nickel, titanium, or tantalum), an alloy, or a combination thereof. The melting point of the material of the electrical connection component 171 may be lower than the melting point of the material of the first conductive component 161a. The material of the electrical connection component 171 may include a metal (e.g., copper, aluminum, silver, gold, tin, or lead), an alloy, or a combination thereof.

[0026] The first redistribution layer 161 may be formed by repeating a deposition process, a patterning process, and a planarization process for multiple times. For example, an insulating layer may be formed on the mold compound layer 151 and the first MEMS chip 110 by a deposition process. Then, an opening or a groove may be formed in the formed insulating layer by a patterning process. Then, a conductive material may be formed in the above-mentioned opening or groove by a deposition process. Then, the upper surface of the insulating layer may be made coplanar with the upper surface of the conductive material by a planarization process. The above steps may be repeated multiple times to form the first redistribution layer 161. The deposition process may include 3D printing (additive manufacturing), physical vapor deposition, chemical vapor deposition, atomic layer deposition, spin coating process, or a combination thereof. The patterning process may include a lithography process, an etching process, a laser drilling process, a mechanical drilling process, or a combination thereof. The planarization process may include a chemical mechanical polishing process, a mechanical polishing process, or a combination thereof.

[0027] Please refer to Figure 1B, the first intermediate chip 120 has a plurality of electrical connection components 122 and a plurality of substrate through-holes 124. The electrical connection component 122 is formed on the lower surface of the first intermediate chip 120 and is electrically connected to the electrical connection component 171. The material and formation method of the electrical connection component 122 may be the same as or similar to the material and formation method of the electrical connection component 171. The electrical connection component 122 may be bonded to the electrical connection component 171 or the first conductive component 161a (if the electrical connection component 171 does not exist) by heat treatment. In this way, the first intermediate chip 120 may be fixed on the first redistribution layer 161.

[0028] Please refer to Figure 1C After the first intermediate chip 120 is bonded to the first redistribution layer 161, a mold compound layer 152 is formed to cover the first intermediate chip 120. Then, the mold compound layer 152 is cured. Then, a second planarization process is performed, such as a chemical mechanical polishing process, to expose the upper surface of the first intermediate chip 120 and the upper surface of the substrate through-hole 124, and to make the upper surface of the first intermediate chip 120, the upper surface of the substrate through-hole 124, and the upper surface of the mold compound layer 152 coplanar. This is conducive to the formation of the subsequent second redistribution layer 162.

[0029] In one embodiment, a second redistribution layer 162 may be formed on the first intermediate chip 120. The second redistribution layer 162 may include a stacked structure formed by a plurality of insulating layers and a plurality of second conductive components 162a formed in the stacked structure. In some embodiments, the second redistribution layer 162 may also include an electrical connection component 172 as needed to electrically connect the second conductive component 162a to the second MEMS chip 130 formed subsequently. The structure, material, and formation method of the second redistribution layer 162 may be the same as or similar to the structure, material, and formation method of the first redistribution layer 161, and will not be described in detail herein.

[0030] Please refer to Figure 1D , a plurality of second MEMS chips 130 are formed on the first intermediate chips 120. Next, a plurality of first cover plates 104 are formed on the second MEMS chips 130. Each first cover plate 104 is used to provide an accommodation space 107.

[0031] The material of the first cover plate 104 may be the same as or similar to the material of the substrate 102. An appropriate first cover plate 104 may be selected according to the function of the second MEMS chip 130. For example, when the second MEMS chip 130 includes a gas sensor, the material of the first cover plate 104 may be glass or polymer with chemical passivity.

[0032] like Figure 1DAs shown, the lower surface of each second MEMS chip 130 has a plurality of electrical connection components 132, and each second MEMS chip 130 has a plurality of substrate through holes 134. The electrical connection components 132 of the second MEMS chip 130 can be bonded to the electrical connection components 172 or the second conductive components 162a (if the electrical connection components 172 do not exist) by heat treatment. In this way, the second MEMS chip 130 can be fixed on the second redistribution layer 162.

[0033] like Figure 1D As shown, the upper surface of each second MEMS chip 130 has a second microstructure 131 and a plurality of conductive pads 135. The conductive pads 135 can be used to electrically connect to an external circuit. The material and formation method of the conductive pads 135 can be the same as or similar to the material and formation method of the first conductive component 161a. The second microstructure 131 can be a sensor or a microactuator. In one embodiment, the second microstructure 131 is a second sensor, and the second MEMS chip 130 has a sensing function. In another embodiment, the second microstructure 131 is a microactuator, and the second MEMS chip 130 has functions such as switching, deformation or movement.

[0034] The method for forming the second MEMS chip 130 may be the same as or similar to the method for forming the first MEMS chip 110. In this embodiment, the second MEMS chip 130 is first fixed on the second redistribution layer 162. Then, the first cover plate 104 and the second MEMS chip 130 are bonded together by a bonding agent. In other embodiments, the first cover plate 104 and the second MEMS chip 130 are first bonded together, and then the first cover plate 104 and the second MEMS chip 130 are fixed together on the second redistribution layer 162.

[0035] Please refer to Figure 1D After the second MEMS chip 130 is fixed on the second redistribution layer 162, an underfill layer 180 is formed between the second MEMS chip 130 and the second redistribution layer 162. The underfill layer 180 may include a curable resin (e.g., epoxy resin). The underfill layer 180 may prevent the second MEMS chip 130 from being displaced or falling off, and prevent the electrical connection component 132 and the electrical connection component 172 from being oxidized.

[0036] Please refer to Figure 1E , a cutting process 190 is performed on the first redistribution layer 161, the mold compound layer 151, the second redistribution layer 162, the mold compound layer 152 and the substrate 102 at a position corresponding to between two adjacent first cover plates 104, so as to separate the plurality of package structures 100 from each other. The cutting process 190 may include a laser cutting process, a diamond cutting process or a combination thereof.

[0037] Please refer to Figure 1F , forming an electrical connection component 182 to electrically connect the conductive pad 135 to an external circuit. In some embodiments, the electrical connection component 182 is a conductive line, and the electrical connection component 182 is bonded to the conductive pad 135 exposed outside the first cover plate 104 by a wire bonding process. After the electrical connection component 182 is formed, other known processes may be performed to complete the package structure 100.

[0038] In the manufacturing method of the package structure 100 provided in the present embodiment, the substrate 102 having the notch 105 is bonded to the first MEMS chip 110, and a plurality of package structures 100 are separated by a cutting process 190. In other words, in the present embodiment, there is no need to use an additional carrier substrate to temporarily support the MEMS chip as in the conventional technology. Therefore, the subsequent step of removing the carrier substrate can be omitted. Furthermore, in the present embodiment, after the cutting process 190, there is no need to form a cover plate to cover the MEMS chip as in the conventional technology. Therefore, the manufacturing method provided in the present embodiment can simplify the process.

[0039] Some embodiments of the present invention provide a packaging structure 100. Figure 1F The package structure 100 includes a substrate 102 , a first MEMS chip 110 , a first redistribution layer 161 , a first intermediate chip 120 , a second redistribution layer 162 , a second MEMS chip 130 , and a first cover plate 104 stacked in sequence from bottom to top.

[0040] The upper surface of the substrate 102 has a notch 105. The lower surface of the first MEMS chip 110 has a first microstructure 111. The first microstructure 111 is located in the notch 105. The first cover plate 104 covers the second MEMS chip 130 and provides a receiving space 107. The upper surface of the second MEMS chip 130 has a second microstructure 131. The second microstructure 131 is located in the receiving space 107. The first microstructure 111 can be a first sensor or a microactuator, and the second microstructure 131 can be a second sensor or a microactuator. In the present embodiment, at least one of the first microstructure 111 and the second microstructure 131 is a sensor. In some embodiments, the first microstructure 111 is a first sensor, and the second microstructure 131 is a second sensor. In such an embodiment, the first microstructure 111 and the second microstructure 131 can each independently be a sound sensor, a gas sensor, an optical sensor, a temperature sensor, a chemical sensor, or other sensors. The first intermediate chip 120 is formed between the first MEMS chip 110 and the second MEMS chip 130 . The first redistribution layer 161 is formed between the first MEMS chip 110 and the first intermediate chip 120 , and the second redistribution layer 162 is formed between the first intermediate chip 120 and the second MEMS chip 130 .

[0041] In the package structure 100 with multiple MEMS chips stacked vertically provided in the embodiment of the present invention, the first intermediate chip 120 is arranged between the first MEMS chip 110 and the second MEMS chip 130 stacked vertically. Compared with the first MEMS chip 110 and the second MEMS chip 130 arranged horizontally, the present embodiment can increase the distance between the first MEMS chip 110 and the second MEMS chip 130, and can reduce the area of ​​the package structure 100. Therefore, the signal interference between the first MEMS chip 110 and the second MEMS chip 130 can be reduced. In this way, the yield and reliability of the package structure 100 can be greatly improved, and it can be beneficial to the miniaturization of the package structure 100.

[0042] In the package structure 100 provided in the embodiment of the present invention, the first intermediate chip 120 may include a signal conversion unit, a logic operation unit, a control unit, or a combination thereof. Therefore, the first intermediate chip 120 may simultaneously receive and process signals from the first MEMS chip 110 and the second MEMS chip 130, and may simultaneously control the operation of the first MEMS chip 110 and the second MEMS chip 130. In this way, the performance of the package structure 100 may be improved, and the miniaturization of the package structure 100 may be facilitated.

[0043] In the packaging structure 100 provided in the embodiment of the present invention, the first redistribution layer 161 can be used to transmit signals between the first intermediate chip 120 and the first MEMS chip 110, and the second redistribution layer 162 can be used to transmit signals between the first intermediate chip 120 and the second MEMS chip 130. The first MEMS chip 110, the first intermediate chip 120 and the second MEMS chip 130 may have different sizes. By providing the first redistribution layer 161 and the second redistribution layer 162, it is possible to facilitate electrical connection between adjacent components. In other words, the first redistribution layer 161 and the second redistribution layer 162 help integrate the first MEMS chip 110, the first intermediate chip 120 and the second MEMS chip 130 into the same packaging structure 100.

[0044] In the package structure 100 provided in the embodiment of the present invention, the structures of the recess 105 and the accommodation space 107 can be changed according to the functions of the first MEMS chip 110 and the second MEMS chip 130. For example, when the recess 105 is a closed space, the first microstructure 111 can be a sound sensor, an optical sensor, a temperature sensor, or an actuator. On the other hand, when the recess 105 is an open space, the first microstructure 111 can be a gas sensor, a chemical substance sensor, or an actuator.

[0045] Please refer to Figure 1F In this embodiment, the recess 105 is a closed space. The upper surface of the first cover plate 104 has an opening 101, so that the accommodating space 107 becomes an open space. In some embodiments, a filling medium can be used to fill the recess 105 to further improve the performance of the first MEMS chip 110 through the filling medium. For example, in some embodiments, the first microstructure 111 is an optical sensor, and a filling medium with light absorption properties is used to fill the recess 105. The filling medium allows light in the wavelength range to be sensed to pass through and blocks light in other wavelength ranges, thereby improving the sensitivity of sensing. In addition, in other embodiments, the filling medium can be used to adjust the refractive index, color or sound absorption in the recess 105. The filling medium may include a curable polymer, a pigment, a dye, a solvent, a high-viscosity liquid material, or a combination of the above.

[0046] It should be understood that the structures of the recess 105 and the accommodating space 107 can be determined according to needs. For example, the recess 105 and the accommodating space 107 can be a closed space or an open space independently. The filling medium can be formed in the closed recess 105 and / or the accommodating space 107 as needed.

[0047] Figure 2 Schematic cross-sectional views of package structures 200 according to other embodiments of the present invention. Figure 2 Similar to Figure 1F .exist Figure 2 The same reference numerals are used to designate the components shown in Figure 1F For the sake of simplicity, Figure 1F The components shown and their formation process steps are not described in detail here.

[0048] Figure 2 The package structure 200 shown is Figure 1F The package structure 100 shown in FIG. 1 is similar to the package structure 100 shown in FIG. 1 , except that the package structure 200 has a second intermediate chip 220 and a third intermediate chip 320. Figure 1B In the process steps, the first intermediate chip 120, the second intermediate chip 220 and the third intermediate chip 320 are respectively formed on the first redistribution layer 161. In other words, in this embodiment, the first intermediate chip 120, the second intermediate chip 220 and the third intermediate chip 320 are arranged horizontally.

[0049] The structures of the second intermediate chip 220 and the third intermediate chip 320 may be similar to the structure of the first intermediate chip 120. The second intermediate chip 220 has a plurality of electrical connection components 222 and a plurality of substrate through-holes 224. The third intermediate chip 320 has a plurality of electrical connection components 322 and a plurality of substrate through-holes 324. The second intermediate chip 220 may include a storage unit, an antenna unit, or a combination thereof. The third intermediate chip 320 may include a storage unit, an antenna unit, or a combination thereof. In some embodiments, one of the second intermediate chip 220 and the third intermediate chip 320 has a storage unit, and the other has an antenna unit. The storage unit may store signals from the first MEMS chip 110 and / or the second MEMS chip 130. The antenna unit may receive signals from the outside, or send signals to the outside. Therefore, the packaging structure 200 can be remotely controlled remotely.

[0050] In the present embodiment, the size of the second intermediate chip 220 and the size of the third intermediate chip 320 are smaller than the size of the first intermediate chip 120. Furthermore, the size of the second MEMS chip 130 is larger than the sum of the size of the first intermediate chip 120, the size of the second intermediate chip 220, and the size of the third intermediate chip 320. Therefore, even if the second intermediate chip 220 and the third intermediate chip 320 are added to the package structure 200, the volume of the package structure 200 will not be increased. Adding the size of the second intermediate chip 220 and the third intermediate chip 320 can increase the function and application field of the package structure 200.

[0051] Figure 3 Schematic cross-sectional views of package structures 300 according to other embodiments of the present invention. Figure 3 Similar to Figure 2 .exist Figure 3The same reference numerals are used to designate the components shown in Figure 2 For the sake of simplicity, Figure 2 The components shown and their formation process steps are not described in detail here.

[0052] Figure 3 The package structure 300 shown is Figure 2 The packaging structure 200 is similar to the packaging structure 200 of FIG. 1 , except that the second intermediate chip 220 and the third intermediate chip 320 are formed between the second MEMS chip 130 and the first intermediate chip 120. Figure 1C In the step of forming the second intermediate chip 220 and the third intermediate chip 320, respectively, the second redistribution layer 162 is formed. Afterwards, a mold compound layer 153 is formed to cover the second intermediate chip 220 and the third intermediate chip 320. Then, the mold compound layer 153 is cured. Then, a third planarization process is performed to expose the upper surface of the second intermediate chip 220, the upper surface of the third intermediate chip 320, and the upper surface of the substrate through-holes 224 and 324, so that the upper surface of the second intermediate chip 220, the upper surface of the third intermediate chip 320, the upper surface of the substrate through-holes 224 and 324, and the upper surface of the mold compound layer 153 are coplanar. This is conducive to the formation of the subsequent third redistribution layer 163. Then, the third redistribution layer 163 can be formed on the second intermediate chip 220 and the third intermediate chip 320, and the second MEMS chip 130 is formed on the third redistribution layer 163. In other words, in the present embodiment, the second intermediate chip 220 and the third intermediate chip 320 are arranged horizontally, and the second intermediate chip 220 (and the third intermediate chip 320) are arranged vertically with the first intermediate chip 120. The third redistribution layer 163 may include a stacked structure formed by a plurality of insulating layers and a plurality of third conductive components 163a formed in the stacked structure. In some embodiments, the third redistribution layer 163 may also include an electrical connection component 173 as needed to electrically connect the third conductive component 163a to the second MEMS chip 130.

[0053] In this embodiment, the distance between the first MEMS chip 110 and the second MEMS chip 130 can be further increased. Therefore, the signal interference between the first MEMS chip 110 and the second MEMS chip 130 can be further reduced. In this way, the yield and reliability of the packaging structure 300 can be further improved.

[0054] Figure 4 Schematic cross-sectional views of package structures 400 according to other embodiments of the present invention. Figure 4 Similar to Figure 3 .exist Figure 4 The same reference numerals are used to designate the components shown in Figure 3 For the sake of simplicity, Figure 3 The components shown and their formation process steps are not described in detail here.

[0055] Figure 4 The package structure 400 shown is Figure 3 The packaging structure 300 is similar to that of FIG. 1 , except that the second intermediate chip 220 and the third intermediate chip 320 are formed between the first MEMS chip 110 and the first intermediate chip 120. Figure 1B In the process steps, the second intermediate chip 220 and the third intermediate chip 320 are respectively formed on the first redistribution layer 161. Then, the second redistribution layer 162 can be formed on the second intermediate chip 220 and the third intermediate chip 320, and the first intermediate chip 120 is formed on the second redistribution layer 162. Then, the third redistribution layer 163 can be formed on the first intermediate chip 120, and the second MEMS chip 130 is formed on the third redistribution layer 163.

[0056] and Figure 3 Similar to the embodiment shown, in this embodiment, the distance between the first MEMS chip 110 and the second MEMS chip 130 can be further increased. Therefore, the signal interference between the first MEMS chip 110 and the second MEMS chip 130 can be further reduced.

[0057] It should be understood that Figures 2 to 4 The embodiments shown are only for illustration and are not intended to limit the present invention. The number, function and arrangement of the intermediate chips can be determined according to needs.

[0058] Figure 5 Schematic cross-sectional views of package structures 500 according to other embodiments of the present invention. Figure 5 and Figure 2 Similar. Figure 5 The same reference numerals are used to designate the components shown in Figure 2 For the sake of simplicity, Figure 2 The components shown and their formation process steps are not described in detail here.

[0059] Figure 5 The package structure 500 shown is Figure 2 The package structure 500 is similar to the package structure 200 shown in FIG. 1 , except that the package structure 500 further includes a third MEMS chip 140. The third MEMS chip 140 is formed between the first intermediate chip 120 and the second MEMS chip 130. Figure 1CAfter the step of forming the second redistribution layer 162, a fourth redistribution layer 164 is formed on the second redistribution layer 162, and a plurality of openings are formed in the fourth redistribution layer 164 to expose the second redistribution layer 162. Then, corresponding to the positions of the openings, a plurality of third MEMS chips 140 may be formed on the second redistribution layer 162. Then, a second MEMS chip 130 may be formed on the fourth redistribution layer 164.

[0060] The fourth redistribution layer 164 may include a stacked structure formed of multiple insulating layers and multiple fourth conductive components 164a formed in the stacked structure. In some embodiments, the fourth redistribution layer 164 may also include an electrical connection component 174 as needed to electrically connect the fourth conductive component 164a to the second MEMS chip 130.

[0061] Please refer to Figure 5 , the second cover plate 106 is formed on the third MEMS chip 140. The second cover plate 106 provides a containing space 109, and the third microstructure 141 of the third MEMS chip 140 is located in the containing space 109. A suitable second cover plate 106 can be selected according to the function of the third MEMS chip 140. In this embodiment, the second cover plate 106 and the third MEMS chip 140 are first bonded together, and then the second cover plate 106 and the third MEMS chip 140 are fixed together on the second redistribution layer 162. In other embodiments, the formed third MEMS chip 140 is first fixed on the second redistribution layer 162. Afterwards, the second cover plate 106 and the third MEMS chip 140 are bonded together by applying a bonding agent to the upper surface of the third MEMS chip 140 or the lower surface of the second cover plate 106.

[0062] like Figure 5 As shown, the lower surface of each third MEMS chip 140 has a plurality of electrical connection components 142, and each third MEMS chip 140 has a plurality of substrate through holes 144. The electrical connection components 142 of the third MEMS chip 140 can be bonded to the electrical connection components 172 or the second conductive component 162a (if the electrical connection components 172 do not exist) by heat treatment. In this way, the third MEMS chip 140 can be fixed on the second redistribution layer 162. The upper surface of each third MEMS chip 140 has a third microstructure 141. The third microstructure 141 can be a sensor or a microactuator. In one embodiment, the third microstructure 141 is a third sensor, and the third MEMS chip 140 has a sensing function. In another embodiment, the third microstructure 141 is a microactuator, and the third MEMS chip 140 has functions such as switching, deformation or movement.

[0063] In this embodiment, the side wall of the second cover plate 106 has an opening 101, so that the accommodation space 109 becomes an open space. In other embodiments, the accommodation space 109 is a closed space and can be filled with a filling medium. It should be noted that in this embodiment, when the accommodation space 109 is an open space, in order to reduce or avoid the impact of subsequent processes on the third microstructure 141, the opening 101 is located on the side wall of the second cover plate 106.

[0064] Figure 6 Schematic cross-sectional views of package structures 600 according to other embodiments of the present invention. Figure 6 and Figure 5 Similar. Figure 6 The same reference numerals are used to designate the components shown in Figure 5 For the sake of simplicity, Figure 5 The components shown and their formation process steps are not described in detail here. Figure 6 The package structure 600 shown is Figure 5 The package structure 500 shown in FIG. 1 is similar to the package structure 500 shown in FIG. 1 , except that the third MEMS chip 140 is formed on the first intermediate chip 120 and is arranged horizontally with the second MEMS chip 130 . Figure 1D In the step of forming the second MEMS chip 130 and the third MEMS chip 140 on the second redistribution layer 162 respectively.

[0065] exist Figure 5 and Figure 6 In the embodiment, more than three MEMS chips with different functions can be integrated into the same package structure without significantly increasing the area. Therefore, the application field can be expanded under the premise of miniaturization of the package structure. In addition, the number, function and arrangement of MEMS chips can be determined according to needs.

[0066] Various packaging structures with MEMS devices provided by embodiments of the present invention can be widely used in various fields. In some embodiments, Figure 1FThe package structure 100 shown can be a medical detection device. The first MEMS chip 110 can be a micro motor, and the second MEMS chip 130 can be a sensor of a chemical substance (e.g., hemoglobin, a specific protein or a hormone, etc.). In such an embodiment, the package structure 100 can move in the body and detect a specific chemical substance. In other embodiments, any of the package structures 200, 300, and 400 can be another medical detection device. The second intermediate chip 220 can have a storage unit, and the third intermediate chip 320 can have an antenna unit, and any of the package structures 200, 300, and 400 can store sensing data of a specific chemical substance, and can be remotely controlled or transmit the sensing data to the outside of the body. In other embodiments, any of the package structures 500 and 600 can be another medical detection device. The third MEMS chip 140 can be a sensor of a second chemical substance (e.g., hemoglobin, a specific protein or a hormone, etc.). In such an embodiment, any of the package structures 500 and 600 can detect two specific chemical substances at the same time.

[0067] In some embodiments, Figure 1F The package structure 100 shown can be a breathing adjustment device. The first MEMS chip 110 can be a microactuator, and the second MEMS chip 130 can be a gas (e.g., oxygen or carbon dioxide, etc.) sensor. In such an embodiment, the package structure 100 can adjust the supplied oxygen concentration by detecting the gas concentration data breathed by the patient. In other embodiments, any of the package structures 200, 300, 400 can be another breathing adjustment device. The second intermediate chip 220 can have a storage unit, and the third intermediate chip 320 can have an antenna unit. Any of the package structures 200, 300, 400 can store the sensing data of a specific gas, and can send a signal to remotely control another gas supply device or transmit the sensing data to other devices. In other embodiments, any of the package structures 500 and 600 can be another breathing adjustment device. The third MEMS chip 140 can be a sound sensor. In such an embodiment, any of the package structures 500 and 600 can simultaneously detect the gas concentration and the sound of the patient's chest cavity to adjust the supplied oxygen concentration.

[0068] It should be understood that the above embodiments are only for illustration and are not intended to limit the present invention. The functions and combinations of the MEMS chip can be determined according to actual needs or application fields.

[0069] In summary, in the packaging structure with a MEMS device provided by an embodiment of the present invention, at least one intermediate chip is arranged between two vertically stacked MEMS chips. By increasing the distance between the two MEMS chips by the intermediate chip, the signal interference between the MEMS chips can be reduced. Therefore, the yield rate and reliability can be greatly improved. Furthermore, this intermediate chip can simultaneously receive and process signals from the two MEMS chips above and below, and can also control the operation of these MEMS chips. Therefore, it can be beneficial to the miniaturization of the packaging structure. In addition, in the packaging structure with a MEMS device provided by an embodiment of the present invention, more than three MEMS chips with different functions can be integrated in the same packaging structure without significantly increasing the area of ​​the packaging structure. Therefore, the application field of the packaging structure with a MEMS device can be greatly increased under the premise of meeting the miniaturization of the packaging structure.

[0070] Although the present invention has been disclosed as above with several preferred embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the technical field may make any changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope of protection defined by the claims of this application.

Claims

1. A packaging structure, characterized in that: include: A substrate having a recess; a first micro-electromechanical system chip formed on the substrate, wherein the first micro-electromechanical system chip has a substrate through-hole, a lower surface of the first micro-electromechanical system chip has a first sensor or a micro-actuator formed on the substrate through-hole, and the first sensor or the micro-actuator is located in the recess; a first intermediate chip formed on the first MEMS chip, wherein the first intermediate chip has a substrate through hole, and the first intermediate chip includes a signal conversion unit, a logic operation unit, a control unit or a combination thereof; a second MEMS chip formed on the first intermediate chip, wherein the second MEMS chip has a through-substrate hole, an upper surface of the second MEMS chip has a second sensor or a microactuator formed on the through-substrate hole, and the package structure includes at least one of the first sensor and the second sensor; and A first cover is formed on the second MEMS chip, wherein the first cover provides a containing space, and the second sensor or the microactuator located on the upper surface of the second MEMS chip is located in the containing space.

2. The packaging structure according to claim 1, characterized in that: Also includes: A second intermediate chip is formed between the first MEMS chip and the second MEMS chip, wherein the second intermediate chip has a substrate through hole, and wherein the second intermediate chip includes a storage unit, an antenna unit or a combination thereof.

3. The packaging structure according to claim 2, characterized in that: Also includes: A third intermediate chip is formed between the first MEMS chip and the second MEMS chip, wherein the third intermediate chip has a substrate through hole, and wherein the third intermediate chip includes a storage unit, an antenna unit or a combination thereof.

4. The packaging structure according to claim 3, characterized in that: The third intermediate chip is arranged horizontally with the second intermediate chip.

5. The packaging structure according to any one of claims 2 to 4, characterized in that: The second intermediate chip is arranged horizontally with the first intermediate chip.

6. The packaging structure according to any one of claims 2 to 4, characterized in that: The second intermediate chip is formed between the first micro-electromechanical system chip and the first intermediate chip.

7. The packaging structure according to any one of claims 2 to 4, characterized in that: The second intermediate chip is formed between the second micro-electromechanical system chip and the first intermediate chip.

8. The packaging structure according to any one of claims 1 to 3, characterized in that: Also includes: a third MEMS chip formed on the first intermediate chip and arranged horizontally with the second MEMS chip, wherein an upper surface of the third MEMS chip has a third sensor or a microactuator; and A second cover is formed on the third MEMS chip, wherein the third sensor or the microactuator located on the upper surface of the third MEMS chip is located in a containing space provided by the second cover.

9. The packaging structure according to any one of claims 1 to 3, characterized in that: Also includes: a third MEMS chip formed between the first intermediate chip and the second MEMS chip, wherein an upper surface of the third MEMS chip has a third sensor or a microactuator; and A second cover is formed on the third MEMS chip, wherein the third sensor or the microactuator located on the upper surface of the third MEMS chip is located in a containing space provided by the second cover.

10. The packaging structure according to claim 9, characterized in that: The side wall of the second cover plate has an opening.

11. The packaging structure according to claim 1, characterized in that: Also includes: a first redistribution layer formed between the first micro-electromechanical system chip and the first intermediate chip; a second redistribution layer formed between the first intermediate chip and the second MEMS chip; and A filling medium is formed in at least one of the recess and the accommodating space.

12. A method for manufacturing a packaging structure, characterized in that: include: Providing a substrate, wherein the substrate has a plurality of recesses; forming a plurality of first micro-electromechanical system chips on the substrate, wherein each of the plurality of first micro-electromechanical system chips has a substrate through hole, and a lower surface of each of the plurality of first micro-electromechanical system chips has a first sensor or a micro-actuator formed on the substrate through hole, and the first sensor or the micro-actuator is located in one of the plurality of recesses; A plurality of first intermediate chips are formed on the substrate, wherein each of the plurality of first intermediate chips is formed on one of the plurality of first micro-electromechanical system chips, wherein each of the plurality of first intermediate chips has a substrate through hole, and each of the plurality of first intermediate chips includes a signal conversion unit, a logic operation unit, a control unit, or a combination thereof; forming a plurality of second micro-electromechanical system chips on the plurality of first intermediate chips, wherein each of the plurality of second micro-electromechanical system chips has a through-substrate hole, wherein an upper surface of each of the plurality of second micro-electromechanical system chips has a second sensor or a micro-actuator formed on the through-substrate hole, and wherein the package structure includes at least one of the first sensor and the second sensor; as well as A plurality of first cover plates are formed on the plurality of second MEMS chips, wherein each of the plurality of first cover plates provides a receiving space, and the second sensor or the microactuator located on the upper surface of each of the plurality of second MEMS chips is located in the receiving space.

13. The method for manufacturing a packaging structure according to claim 12, characterized in that: Also includes: forming a molding compound layer covering the plurality of first MEMS chips; Performing a first planarization process to expose upper surfaces of the plurality of first MEMS chips and make the plurality of upper surfaces of the plurality of first MEMS chips coplanar with an upper surface of the molding compound layer; forming a first redistribution layer on the plurality of first MEMS chips; forming a molding compound layer covering the plurality of first intermediate chips; Performing a second planarization process to expose upper surfaces of the plurality of first intermediate chips and to make the plurality of upper surfaces of the plurality of first MEMS chips coplanar with an upper surface of the molding compound layer; forming a second redistribution layer on the plurality of first intermediate chips; as well as A cutting process is performed on the first redistribution layer, the molding compound layer, the second redistribution layer, the molding compound layer and the substrate.

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