A controllable pulsed ion beam shaping method based on frequency domain parameter adjustment

Abstract

The present invention discloses a controllable pulsed ion beam shaping method based on frequency domain parameter adjustment. The present invention includes obtaining the processing amount of the modified surface of the component; gridding the modified surface of the component, calculating the initial duty cycle matrix and surface shape residual of each grid of the modified surface according to the processing amount, and iteratively optimizing the duty cycle matrix; controlling the duty cycle of the pulsed ion beam to shape the modified surface of the component according to the obtained iteratively optimized duty cycle matrix. The present invention changes the traditional mode of keeping the ion beam removal function stable during the processing process, dynamically controls the removal efficiency of the removal function, sets the duty cycle to zero in the area where material removal is not required, avoids the additional removal layer caused by the residence time adjustment, improves the convergence ratio of the shaping, and improves the polishing efficiency while retaining the advantages of traditional ion beam polishing. By controlling the single-shot pulse removal, the maximum resolution of the ion beam shaping is improved.

Description

Technical Field

[0001] The invention relates to an ion beam ultra-precision machining technology, and in particular to a controllable pulse ion beam shaping method based on frequency domain parameter adjustment. Background Art

[0002] High-precision optical devices are the basic guarantee for the performance of optical systems. With the rapid development of modern science and technology, the demand for high-precision optical components is increasing, especially in the fields of laser nuclear fusion, photolithography machine manufacturing, national defense equipment, etc. The precision requirements of optical components have reached the manufacturing limit, and the manufacturing of components with high precision, high convergence ratio and low damage has become a challenge of the times.

[0003] As a non-contact polishing tool, ion beam polishing removes materials by sputtering the surface of the component through beam bombardment. The removal function of ion beam polishing is close to the ideal Gaussian shape, has good shaping ability, and can achieve deterministic and controllable removal of error materials. It does not directly contact the workpiece during the processing, avoids the generation of edge effects, and can obtain high-precision surfaces. It is usually used as the last process of super-finishing.

[0004] Existing ion beam shaping is achieved by controlling the length of the processing residence time in different areas of the workpiece surface, thereby achieving a specific amount of material removal in a specific area by the ion beam. However, due to the limitations of the machine tool's motion performance and the surface error of the actual workpiece surface, when less material needs to be removed, the residence time in this area will become extremely short or even zero, which is difficult to achieve in actual processing. Therefore, traditional continuous ion beams inevitably have additional removal layers, which increases the number of shaping iterations.

[0005] At the same time, the key parameter that determines the existing ion beam shaping resolution is the machine tool movement speed. The faster the speed, the less the removal amount. If the required removal amount of the surface error is extremely small, there is an upper limit to simply increasing the machine tool movement speed. In addition, too fast a movement speed will cause fluctuations in the ion source, thereby affecting the stability of the removal function. Summary of the invention

[0006] Technical problems to be solved by the present invention: In view of the above-mentioned problems of the prior art, a controllable pulsed ion beam shaping method based on frequency domain parameter adjustment is provided. The present invention adjusts the removal efficiency of the removal function in real time by adjusting the duty cycle of the ion beam pulse, changes the traditional mode of maintaining the ion beam removal function stable during processing, dynamically controls the removal efficiency of the removal function, and sets the duty cycle to zero in areas where material removal is not required, thereby avoiding the additional removal layer caused by the residence time adjustment and improving the convergence ratio of the shaping. While retaining the advantages of traditional ion beam polishing, the present invention improves the polishing efficiency, and by controlling the single-shot pulse removal, improves the maximum resolution of the ion beam shaping.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0008] A controllable pulsed ion beam shaping method based on frequency domain parameter adjustment, comprising:

[0009] 1) Obtaining the processing amount of the modified surface of the component;

[0010] 2) Meshing the modified surface of the component, and calculating the initial duty cycle matrix and surface shape residual of each mesh of the modified surface according to the processing amount;

[0011] 3) Iteratively optimize the duty cycle matrix according to the duty cycle matrix and surface shape residual corresponding to each grid;

[0012] 4) The duty cycle of the pulsed ion beam is controlled according to the iteratively optimized duty cycle matrix to perform modification on the modified surface of the component, and during the modification process, the machine tool drives the component to move at a uniform speed, and the duty cycle is adjusted in real time according to the iteratively optimized duty cycle matrix to control the material removal amount of each scanning grid, and if the duty cycle is zero, no material removal is performed.

[0013] Optionally, the processing amount of the modified surface of the component in step 1) includes a material removal amount matrix H and a removal function matrix R of the modified surface of the component; the function expression for calculating the initial duty cycle matrix of the modified surface in step 2) is:

[0014] DC0=H / (TB),

[0015] In the above formula, DC0 is the initial duty cycle matrix of the modified surface, H is the material removal matrix of the modified surface of the element, T is the pulse period, and B is the removal function strength; the function expression for calculating the initial surface shape residual of the modified surface is:

[0016] E0=H-DC0*R,

[0017] In the above formula, E0 is the initial surface shape residual of the modified surface, and R is the removal function matrix of the modified surface.

[0018] Optionally, the calculation function expression of the removal function strength is:

[0019] B=2πσ 2 A,

[0020] In the above formula, σ is the Gaussian distribution parameter of the removal function, and A is the peak removal rate.

[0021] Optionally, when the modified surface of the element is meshed in step 2), the side length l of the obtained mesh satisfies the following constraint:

[0022] f<v / l,

[0023] In the above formula, f is the pulse frequency of the pulsed ion beam, and v is the speed of the element moving at a uniform speed.

[0024] Optionally, step 3) includes:

[0025] 3.1) Initialize the iteration variable k;

[0026] 3.2) According to the current surface residual E k Correction Duty Cycle Matrix DC k Get the next duty cycle matrix DC k+1 ;

[0027] 3.3) For the next duty cycle matrix DC k+1 Perform a non-negative check, if the next duty cycle matrix DC k+1 If it is less than 0, the next duty cycle matrix DC k+1 The value of is set to zero;

[0028] 3.4) According to the next duty cycle matrix DC k+1 Calculate the next surface residual E k+1 ;

[0029] 3.5) Determine the next surface shape residual E k+1 Whether the requirements are met, if so, determine the duty cycle matrix DC k+1 The iteration is completed. Otherwise, the iteration variable k is increased by 1 and the execution is jumped to step 3.2).

[0030] Optionally, the next duty cycle matrix DC in step 3.2) k+1 The calculation function expression is:

[0031] DC k+1 =DC k +ξΔ k ,

[0032] In the above formula, DC k is the current duty cycle matrix, ξ is the relaxation factor, Δ k is the current duty cycle matrix correction, and:

[0033] Δ k =E k / B,

[0034] In the above formula, E k is the current surface shape residual, and B is the removal function strength.

[0035] Optionally, in step 3.4), the next surface shape residual E is calculated k+1 The function expression is:

[0036] E k+1=H-DC k+1 *R,

[0037] In the above formula, H is the material removal matrix of the modified surface of the component, DC k+1 is the duty cycle matrix for the next time, and R is the removal function matrix of the modified surface.

[0038] Optionally, after step 4), the process also includes detecting the shape of the modified surface of the processed component to determine whether the shape after processing meets the requirements. If it does not meet the requirements, the process jumps to step 4) to continue iterative processing; otherwise, the process ends and exits.

[0039] In addition, the present invention also provides a controllable pulsed ion beam shaping system based on frequency domain parameter adjustment, comprising a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the steps of the controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0040] In addition, the present invention also provides a computer-readable storage medium, in which a computer program is stored, and the computer program is used to be executed by a microprocessor to implement the steps of the controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0041] Compared with the prior art, the present invention mainly has the following advantages:

[0042] 1. The present invention realizes precise control of the ion beam shaping processing amount by changing the frequency domain parameter of the pulsed ion beam duty cycle. Since the duty cycle can be set to zero, there is no additional removal layer in the method proposed by the present invention. The dynamically adjustable removal function allows the removal efficiency to be adjusted in a timely manner, changing the traditional mode of maintaining a stable ion beam removal function during processing, shortening the number of iterations of ion beam processing, and having a higher convergence ratio for workpieces with larger surface errors.

[0043] 2. The present invention can achieve a higher order of magnitude of ion beam processing material removal resolution. By controlling the frequency and duty cycle of the pulse, the material removal of a single pulse can be accurately controlled, and the material removal resolution can be 2 orders of magnitude better than that of a continuous ion beam.

[0044] 3. The present invention changes the traditional way of realizing the dwell time in the shaping process, and reduces the influence of the dynamic performance of the machine tool on the shaping accuracy. The dwell time realization mode no longer relies on the speed change of the machine tool motion axis. By controlling the pulse duty cycle, quantitative material removal is achieved, opening up a new way of controllable material removal in ion beam processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 The figure is a basic flow chart of a method according to a first embodiment of the present invention.

[0046] Figure 2 The figure is a detailed flowchart of a method according to a first embodiment of the present invention.

[0047] Figure 3 This is a simulated initial surface diagram of the component in Example 3 of the present invention.

[0048] Figure 4 It is the removal function of the element in the third embodiment of the present invention.

[0049] Figure 5 This is a duty cycle matrix diagram obtained by solving in the third embodiment of the present invention.

[0050] Figure 6 This is the residual image remaining after simulation shaping in the third embodiment of the present invention.

[0051] Figure 7 This is a diagram of the measured initial surface error of the component in Example 3 of the present invention.

[0052] Figure 8 This is the residual error map remaining after the actual measurement of the shape correction in the third embodiment of the present invention.

[0053] Fig. 9 This is the residual diagram after conventional ion beam shaping in the third embodiment of the present invention.

[0054] Fig.10 This is the residual diagram after the pulsed ion beam is shaped in the third embodiment. DETAILED DESCRIPTION

[0055] The present invention will be further described in detail below by taking the preparation of a single-crystal silicon plane reflector of a certain model with a diameter of 100 mm and a surface error PV<0.01λ and a surface quality Ra<2nm as an example of a pulsed ion beam shaping element.

[0056] like Figure 1 As shown, the controllable pulsed ion beam shaping method based on frequency domain parameter adjustment in this embodiment includes:

[0057] 1) Obtaining the processing amount of the modified surface of the component;

[0058] 2) Meshing the modified surface of the component, and calculating the initial duty cycle matrix and surface shape residual of each mesh of the modified surface according to the processing amount;

[0059] 3) Iteratively optimize the duty cycle matrix according to the duty cycle matrix and surface shape residual corresponding to each grid;

[0060] 4) According to the duty cycle matrix obtained after iterative optimization, the duty cycle of the pulsed ion beam is controlled to perform modification on the modified surface of the component, and during the modification process, the machine tool drives the component to move at a uniform speed, and the duty cycle is adjusted in real time according to the iteratively optimized duty cycle matrix to control the material removal amount of each scanning grid, and if the duty cycle is zero, no material removal is performed. In the controllable pulsed ion beam modification method based on frequency domain parameter adjustment in this embodiment, during the process of performing pulsed ion beam modification on the optical component, the processing amount is calculated based on the morphological difference of the modified surface and is gridded, and the duty cycle matrix corresponding to the grid is calculated according to the removal function. During the modification of the component surface, the machine tool moves at a uniform speed, and the duty cycle is adjusted in real time to control the material removal amount of each scanning grid. Since the duty cycle can be set to zero, that is, no material removal is formed, by introducing the duty cycle as a frequency domain parameter, it is adapted to the modification needs of different surface errors, and the duty cycle is set to zero in the area where material removal is not required, so that the removal efficiency is dynamically adjusted, thereby solving the problem of the existing ion beam modification with extra removal layer, and realizing the high convergence ratio modification of the pulsed ion beam.

[0061] See also Figure 2 In step 1) of this embodiment, the machining amount of the modified surface of the component includes the material removal amount matrix H of the modified surface of the component and the removal function matrix R. When obtaining the machining amount of the modified surface of the component in step 1), the removal function is ideally regarded as a removal pulse (RP), that is, the material removal of the removal function is concentrated to the center point RP:

[0062]

[0063] In the above formula, It represents the material removal rate at any point (x, y) during the machining process and represents the area of ​​action of the removal function during the machining process.

[0064] The function expression for calculating the initial duty cycle matrix of the modified surface in step 2) of this embodiment is:

[0065] DC0=H / (TB),

[0066] In the above formula, DC0 is the initial duty cycle matrix of the modified surface, H is the material removal matrix of the modified surface of the element, T is the pulse period, and B is the removal function strength; the function expression for calculating the initial surface shape residual of the modified surface is:

[0067] E0=H-DC0*R,

[0068] In the above formula, E0 is the initial surface shape residual of the modified surface, and R is the removal function matrix of the modified surface.

[0069] In this embodiment, the calculation function expression of the removal function strength is:

[0070] B=2πσ 2 A,

[0071] In the above formula, σ is the Gaussian distribution parameter of the removal function, and A is the peak removal rate. In this embodiment: d=6σ=30 mm, d is the beam diameter of the removal function, and A=0.5 μm / min.

[0072] In this embodiment, when the modified surface of the element is meshed in step 2), the side length l of the obtained mesh (square) satisfies the following constraint:

[0073] f<u / l,

[0074] In the above formula, f is the pulse frequency of the pulsed ion beam, and v is the speed of the element moving at a uniform speed. For example, as an optional implementation, the side length l of the grid in this embodiment is 1 mm.

[0075] See also Figure 2 , step 3) of this embodiment includes:

[0076] 3.1) Initialize the iteration variable k;

[0077] In this embodiment, the initialization value is k=0, so the initial duty cycle matrix and surface shape residual of each grid are recorded as DC0 and E0 respectively. In addition, other initial values ​​can be taken as needed. For example, if k=1, the initial duty cycle matrix and surface shape residual of each grid are recorded as DC1 and E1 respectively, and so on.

[0078] 3.2) According to the current surface residual E k Correction Duty Cycle Matrix DC k Get the next duty cycle matrix DC k+1 ;

[0079] 3.3) For the next duty cycle matrix DC k+1 Perform a non-negative check, if the next duty cycle matrix DC k+1 If it is less than 0, the next duty cycle matrix DC k+1 The value of is set to zero;

[0080] 3.4) According to the next duty cycle matrix DC k+1 Calculate the next surface residual E k+1 ;

[0081] 3.5) Determine the next surface shape residual E k+1 Whether the requirements are met, if so, determine the duty cycle matrix DC k+1 The iteration is completed. Otherwise, the iteration variable k is increased by 1 and the execution is jumped to step 3.2).

[0082] In order to ensure convergence stability, in this embodiment, the next duty cycle matrix DC k+1 The relaxation factor ξ is introduced into the calculation function expression, and the next duty cycle matrix DC in step 3.2) k+1 The calculation function expression is:

[0083] DC k+1 =DC k +ξΔ k ,

[0084] In the above formula, DC k is the current duty cycle matrix, ξ is the relaxation factor, Δ k is the current duty cycle matrix correction, and:

[0085] Δ k =E k / B,

[0086] In the above formula, E k is the current surface shape residual, and B is the removal function strength.

[0087] The size of the relaxation factor ξ controls the convergence rate of the surface shape residual. The larger the relaxation factor ξ, the faster the surface shape residual converges, and vice versa. However, choosing a relaxation factor ξ that is too large can easily cause the iterative process to diverge. The relaxation factor ξ is generally selected to be ξ<1. When the iterative process does not converge, the value of the relaxation factor ξ is reduced until it converges. Step 3) In the process of solving the duty cycle matrix using the pulse iteration method (see steps 3.1 to 3.5 of Example 1), as the number of iterations increases, the surface shape residual E k The RMS value (root mean square) will gradually decrease and converge. k When the requirements are met, the iteration process ends and the results are output. If the iteration process does not converge, the value of the relaxation factor ξ is reduced.

[0088] In this embodiment, the next surface shape residual E is calculated in step 3.4 k+1 The function expression is:

[0089] E k+1 =H-DC k+1 *R,

[0090] In the above formula, H is the material removal matrix of the modified surface of the component, DC k+1 is the duty cycle matrix for the next time, and R is the removal function matrix of the modified surface.

[0091] The method of controlling the duty cycle of the pulsed ion beam according to the iteratively optimized duty cycle matrix obtained in step 4 to perform shaping on the modified surface of the component is an improvement on the existing pulsed ion beam processing system. The main difference is that a variable duty cycle parameter is adopted based on the iteratively optimized duty cycle matrix obtained for the fixed duty cycle parameter, thereby achieving controllable pulsed ion beam shaping.

[0092] The controllable pulsed ion beam shaping method based on frequency domain parameter adjustment in this embodiment can be applied to various existing pulsed ion beam processing systems. For example, as an optional implementation, the pulsed ion beam processing system in this embodiment includes a three-grid ion optical processing system, a pulse power supply and a PLC. The control signal output end of the PLC is connected to the pulse voltage control end of the screen grid of the three-grid ion optical processing system through the pulse power supply, and the control unit is programmed or configured to execute the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment. The pulsed ion beam processing system inputs the duty cycle matrix to the pulse power supply through the upper computer formula compiled by the PLC, and controls the machine tool movement and pulse opening synchronization through it, so that the pulsed ion beam can achieve fixed-point, timed and quantitative material removal. The upper computer software in the upper computer is Force Control V7.1, the PLC model is SIEMENS S7-200, and the pulse power supply model is Hangneng HNWY. Other process parameters of the pulsed ion beam processing system in the controllable pulsed ion beam shaping include: ion energy 600eV, pulse frequency 100Hz.

[0093] In summary, the method of this embodiment studies and explores the pulsed ion beam controlled by frequency domain parameters, and summarizes the pulsed ion beam shaping theory and method based on the existing research situation. Because the traditional ion beam shaping method changes the removal amount by changing the dwell time, it will produce an additional removal layer, and has high requirements on the motion characteristics of the machine tool, the single shaping convergence ratio is not high, and the number of processing iterations is large. In response to these problems, a controllable pulsed ion beam high convergence ratio shaping method based on frequency domain parameter adjustment is proposed. By introducing the duty cycle as a frequency domain parameter, it adapts to the shaping needs of different surface errors, sets the duty cycle to zero in areas where material removal is not required, and realizes dynamic adjustment of removal efficiency. The duty cycle corresponding to each grid after the surface error is gridded is calculated, and the upper computer software controls the linkage between the pulse power supply and the machine tool movement through the PLC, and obtains the post-processing shape with a high convergence ratio, realizing a high convergence ratio and high-precision pulsed ion beam shaping.

[0094] In addition, this embodiment also provides a controllable pulsed ion beam shaping system based on frequency domain parameter adjustment, including a microprocessor and a memory connected to each other, and the microprocessor is programmed or configured to execute the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0095] This embodiment is based on a controllable pulsed ion beam shaping system with frequency domain parameter adjustment. By analyzing the ion beam material removal mechanism and the ion optical system structure, the ion optical system is combined with a pulse power supply. The system can be used to adjust the pulse duty cycle and frequency, and accurately control the removal amount of a single pulse in shaping, thereby improving the resolution of ion beam shaping and achieving high convergence ratio shaping of optical element pulsed ion beams. While retaining the advantages of ion beam shaping, the polishing efficiency is improved.

[0096] In addition, this embodiment also provides a computer-readable storage medium, in which a computer program is stored, and the computer program is used to be executed by a microprocessor to implement the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0097] Embodiment 2:

[0098] This embodiment is a variation of the first embodiment. In step 3.2 of this embodiment, the next duty cycle matrix DC k+1 The relaxation factor ξ is deleted from the calculation function expression. Compared with the first embodiment, the convergence stability of this embodiment is reduced after the relaxation factor ξ is deleted. In this embodiment, the next duty cycle matrix DC in step 3.2) k+1 The calculation function expression is:

[0099] DC k+1 =DC k +Δ k ,

[0100] In the above formula, DC k is the current duty cycle matrix, Δ k is the current duty cycle matrix correction, and:

[0101] Δ k =E k / B,

[0102] In the above formula, E k is the current surface shape residual, and B is the removal function strength.

[0103] In addition, this embodiment also provides a controllable pulsed ion beam shaping system based on frequency domain parameter adjustment, including a microprocessor and a memory connected to each other, and the microprocessor is programmed or configured to execute the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0104] In addition, this embodiment also provides a computer-readable storage medium, in which a computer program is stored, and the computer program is used to be executed by a microprocessor to implement the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0105] Embodiment three:

[0106] This embodiment is a further improvement of the first embodiment. Considering that one round of processing in step 4) of the first embodiment may not necessarily make the surface shape of the modified surface of the component meet the requirements, the present embodiment is a method for iterative processing based on the preset surface shape requirements on the basis of the first embodiment. Specifically, after step 4) of the present embodiment, it also includes detecting the surface shape of the modified surface of the processed component to determine whether the surface shape after processing meets the requirements. If it does not meet the requirements, jump to step 4) to continue iterative processing; otherwise, end and exit. Through the above-mentioned surface shape detection and iterative judgment, iterative processing based on the preset surface shape requirements can be achieved, thereby effectively improving the efficiency of iterative surface shape processing.

[0107] In this embodiment, the surface shape of the modified surface of the processed component is detected by using a ZYGO white light interferometer and an MST interferometer. The ZYGO white light interferometer is used to measure the surface roughness, and the MST interferometer is used to measure the surface shape. The initial surface shape PV value of the component is 27.307nm, and the RMS value is 8.590nm. Figure 3 is the initial surface diagram of the component simulation, Figure 4 is the component removal function, Figure 5 is the duty cycle matrix diagram obtained by solving in this embodiment, Figure 6 This is the residual image remaining after simulation shaping in this embodiment; Figure 7 is a graph of the measured initial surface error of the component in this embodiment; Figure 8 This is the residual error diagram after the actual measurement of the modification in this embodiment; Fig. 9 is the residual diagram after conventional ion beam shaping in this embodiment; Fig.10 is the residual diagram after the pulsed ion beam is modified in this embodiment. Figure 7 to Figure 10 It can be seen that by controlling the frequency domain parameters in the pulsed ion beam shaping, the shaping result obtained has a higher convergence ratio. While maintaining the advantages of traditional ion beam shaping, the shaping efficiency of the pulsed ion beam is further improved.

[0108] In addition, this embodiment also provides a controllable pulsed ion beam shaping system based on frequency domain parameter adjustment, including a microprocessor and a memory connected to each other, and the microprocessor is programmed or configured to execute the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0109] In addition, this embodiment also provides a computer-readable storage medium, in which a computer program is stored, and the computer program is used to be executed by a microprocessor to implement the steps of the aforementioned controllable pulsed ion beam shaping method based on frequency domain parameter adjustment.

[0110] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may take the form of a computer program product implemented on one or more computer-readable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes. The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, may be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the functions in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing device to work in a specific way, so that the instructions stored in the computer-readable memory produce a product including an instruction device, which implements the functions specified in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable device provide for implementing the process in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0111] The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.

Claims

1. A controllable pulsed ion beam shaping method based on frequency domain parameter adjustment, characterized in that: include: 1) Obtaining the processing amount of the modified surface of the component; 2) Meshing the modified surface of the component, and calculating the initial duty cycle matrix and surface shape residual of each mesh of the modified surface according to the processing amount; 3) Iteratively optimize the duty cycle matrix according to the duty cycle matrix and surface shape residual corresponding to each grid; 4) According to the iteratively optimized duty cycle matrix, the duty cycle of the pulsed ion beam is controlled to modify the modified surface of the component, and during the modification process, the machine tool drives the component to move at a uniform speed, and the duty cycle is adjusted in real time according to the iteratively optimized duty cycle matrix to control the material removal amount of each scanning grid, and if the duty cycle is zero, no material removal is performed; The machining amount of the modified surface of the component in step 1) includes the material removal amount matrix of the modified surface of the component And remove the function matrix ; The function expression for calculating the initial duty cycle matrix of the modified surface in step 2) is: ， In the above formula, is the initial duty cycle matrix of the modified surface, is the material removal matrix of the modified surface of the component, T is the pulse period, To remove the function strength, the function expression for calculating the initial surface shape residual of the modified surface is: ， In the above formula, is the initial residual of the modified surface, is the removal function matrix of the modified surface; The calculation function expression of the removal function strength is: ， In the above formula, To remove the Gaussian distribution parameters of the function, is the peak removal rate; Step 3) includes: 3.1) Initialize the iteration variable k; 3.2) Based on the current surface residual Correction Duty Cycle Matrix Get the next duty cycle matrix ; 3.3) For the next duty cycle matrix Perform a non-negative check, if the next duty cycle matrix If it is less than 0, the next duty cycle matrix The value of is set to zero; 3.4) According to the next duty cycle matrix Calculate the next surface residual ; 3.5) Determine the next surface shape residual Whether the requirements are met, if so, determine the duty cycle matrix The iteration is completed. Otherwise, increase the iteration variable k by 1 and jump to step 3.2).

2. The controllable pulsed ion beam shaping method based on frequency domain parameter adjustment according to claim 1, characterized in that: When the modified surface of the component is meshed in step 2), the side length of the mesh obtained is Satisfy the following constraints: ， In the above formula, is the pulse frequency of the pulsed ion beam, v is the speed of the element moving at a uniform speed.

3. The controllable pulsed ion beam shaping method based on frequency domain parameter adjustment according to claim 1, characterized in that: The next duty cycle matrix in step 3.2) The calculation function expression is: ， In the above formula, is the current duty cycle matrix, is the relaxation factor, is the current duty cycle matrix correction, and: ， In the above formula, is the current surface shape residual, To remove the function strength.

4. The controllable pulsed ion beam shaping method based on frequency domain parameter adjustment according to claim 1, characterized in that: Step 3.4) Calculate the next surface residual The function expression is: ， In the above formula, is the material removal matrix of the modified surface of the component, is the duty cycle matrix for the next time, is the removal function matrix of the modified surface.

5. The controllable pulsed ion beam shaping method based on frequency domain parameter adjustment according to claim 1, characterized in that: After step 4), the process also includes detecting the shape of the modified surface of the processed component to determine whether the shape after processing meets the requirements. If it does not meet the requirements, the process jumps to step 4) to continue iterative processing; otherwise, the process ends and exits.

6. A controllable pulsed ion beam shaping system based on frequency domain parameter adjustment, comprising a microprocessor and a memory connected to each other, characterized in that: The microprocessor is programmed or configured to execute the steps of the controllable pulsed ion beam shaping method based on frequency domain parameter adjustment as claimed in any one of claims 1 to 5.

7. A computer-readable storage medium, characterized in that: The computer readable storage medium stores a computer program, and the computer program is used to be executed by a microprocessor to implement the steps of the controllable pulsed ion beam shaping method based on frequency domain parameter adjustment as described in any one of claims 1 to 5.

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