Display substrate, manufacturing method thereof, driving method and display device

Abstract

The present invention provides a display substrate, a manufacturing method thereof, a driving method thereof, and a display device. The display substrate comprises: a base substrate, a plurality of photodetection units and a plurality of luminous sub-pixels located in a display area of ​​the base substrate, wherein the orthographic projections of the photodetection units on the base substrate and the orthographic projections of the luminous sub-pixels on the base substrate do not overlap with each other; the photodetection units comprise a photodetector and an acquisition control circuit for controlling the photodetector to acquire texture data; the luminous sub-pixels comprise a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light, wherein the active layer of the driving transistor in the pixel driving circuit is a low-temperature polysilicon material, the active layers of at least some of the transistors other than the driving transistor in the pixel driving circuit are a metal oxide semiconductor material, and at least one film layer of the active layer of each transistor in at least some of the transistors is arranged in the same layer and material as the active layer of the transistor in the acquisition control circuit.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display substrate, a manufacturing method thereof, a driving method thereof, and a display device. Background Art

[0002] Fingerprint detection and recognition are now widely used as a means of identity verification and are practically a must-have feature on electronic devices like mobile phones and tablets. Common fingerprint detection methods include capacitive, optical, and ultrasonic, with optical fingerprint detection currently being the mainstream.

[0003] How to improve the integration of display devices has become a technical problem that needs to be solved urgently. Summary of the Invention

[0004] The present invention provides a display substrate, a manufacturing method thereof, a driving method thereof and a display device, which are used to ensure that the display device is integrated with texture detection while reducing the power consumption of the display device.

[0005] In a first aspect, an embodiment of the present invention provides a display substrate, comprising:

[0006] A base substrate, a plurality of photodetection units and a plurality of light-emitting sub-pixels located in a display area of ​​the base substrate, wherein orthographic projections of the photodetection units on the base substrate and orthographic projections of the light-emitting sub-pixels on the base substrate do not overlap with each other;

[0007] The photoelectric detection unit includes a photoelectric detector and an acquisition control circuit for controlling the photoelectric detector to acquire texture data;

[0008] The light-emitting sub-pixel includes a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light. The active layer of the driving transistor in the pixel driving circuit is a low-temperature polycrystalline silicon material. The active layers of at least some of the transistors in the pixel driving circuit other than the driving transistor are metal oxide semiconductor materials, and at least one film layer of the active layer of each transistor in the at least some of the transistors is set at the same layer and material as the active layer of the transistor in the acquisition control circuit.

[0009] In one possible implementation, the active layer of at least part of the transistors is a composite film layer structure, the composite film layer structure includes a high-transition structure and a low-transition structure that are sequentially away from the substrate, and the active layer of the transistor in the acquisition control circuit is a single-film-layer low-transition structure.

[0010] In one possible implementation, the base substrate includes a peripheral area surrounding the display area, and the peripheral area includes a light emitting drive circuit, a gate drive circuit, and an oxide drive circuit, all of which are electrically connected to the pixel drive circuit, and a photodetection drive circuit electrically connected to the acquisition control circuit;

[0011] Among them, the light-emitting driving circuit is used to control the light-emitting duration of the corresponding light-emitting device through the pixel driving circuit, the gate driving circuit is used to control the charging of the corresponding light-emitting sub-pixel through the pixel driving circuit, the oxide driving circuit is used to control the driving of at least part of the transistor, and the photodetection driving circuit is used to control the acquisition control circuit to read the texture data collected by the photodetection unit.

[0012] In a possible implementation, the oxide driving circuit and the photodetection driving circuit are multiplexed into one driving circuit, which is used to control the driving of at least part of the transistors while controlling the acquisition control circuit to read the texture data collected by the photodetection unit.

[0013] In one possible implementation, the peripheral area includes a switch control circuit electrically connected to the photodetector, and the first electrode of the photodetector is electrically connected to the first electrode of the acquisition control circuit, the second electrode of the photodetector is electrically connected to the first electrode of the switch control circuit, the second electrode of the switch control circuit is electrically connected to the reverse bias voltage terminal, and the second electrode of the acquisition control circuit is coupled to the signal readout terminal. If the display substrate is in a normal display state, the drive circuit maintains the drive of at least part of the transistors while the switch control circuit is used to disconnect the path between the acquisition control circuit and the reverse bias voltage terminal. If the display substrate is in a texture recognition state, the drive circuit maintains the drive of at least part of the transistors while the switch control circuit is used to connect the path between the acquisition control circuit and the reverse bias voltage terminal.

[0014] In one possible implementation, the photodetector includes a first conversion electrode, an organic conversion layer, and a second conversion electrode sequentially facing away from the base substrate; the light-emitting device includes a first light-emitting electrode, an organic light-emitting layer, and a second light-emitting electrode sequentially facing away from the base substrate;

[0015] The first conversion electrode and the first light-emitting electrode are provided in the same layer and made of the same material; and / or,

[0016] The second conversion electrode and the second light-emitting electrode are provided in the same layer and made of the same material.

[0017] In a possible implementation, the gate of the transistor in the acquisition control circuit and the gate of the transistor in the pixel driving circuit are provided in the same layer and the same material.

[0018] In a possible implementation manner, the at least some transistors are transistors in the pixel driving circuit that are directly connected to the driving transistor.

[0019] In a second aspect, an embodiment of the present invention provides a display device, including:

[0020] A display substrate as described in any one of the above items.

[0021] In a third aspect, an embodiment of the present invention provides a method for manufacturing a display substrate as described in any one of the above items, comprising:

[0022] The pixel driving circuit is formed on the substrate, and the acquisition control circuit is formed at the same time;

[0023] The light emitting device is formed on a side of the pixel driving circuit away from the substrate, and the photodetector is formed on a side of the acquisition control circuit away from the substrate;

[0024] forming the light-emitting sub-pixel including the pixel driving circuit and the light-emitting device, and forming the photodetection unit including the photodetector and the acquisition control circuit;

[0025] Wherein, the pixel driving circuit is formed on the substrate and the acquisition control circuit is formed at the same time, including:

[0026] On the base substrate, an active layer of the driving transistor is formed by using a low temperature polysilicon material;

[0027] Using metal oxide semiconductor materials, at least one film layer of the active layer of each transistor in at least part of the transistors and the active layer of the transistor in the acquisition control circuit are manufactured in the same layer;

[0028] According to the patterns of the active layers, the acquisition control circuit is formed while the pixel driving circuit is formed.

[0029] In a possible implementation, manufacturing at least one film layer of the active layer of each transistor in the at least part of the transistors and the active layer of the transistor in the acquisition control circuit on the same layer includes:

[0030] forming a patterned high-pass structure at a position of each transistor in the at least part of the transistors;

[0031] While forming a patterned low-transition structure on a side of the high-transition structure away from the substrate, a patterned low-transition structure is formed at the position of the transistor in the acquisition control circuit;

[0032] The active layer of each transistor in the at least part of the transistors is formed according to the high-transition structure and the low-transition structure, and the active layer of the transistor in the acquisition control circuit is formed according to the low-transition structure.

[0033] In a fourth aspect, an embodiment of the present invention provides a driving method for a display substrate as described in any one of the above items, wherein the peripheral area of ​​the base substrate of the display substrate includes a light emitting driving circuit, a gate driving circuit, and a photodetection driving circuit electrically connected to the pixel driving circuit, the oxide driving circuit and the photodetection driving circuit are multiplexed into one driving circuit, the peripheral area includes a switch control circuit electrically connected to the photodetector, the first electrode of the photodetector is electrically connected to the first electrode of the acquisition control circuit, the second electrode of the photodetector is electrically connected to the first electrode of the switch control circuit, the second electrode of the switch control circuit is electrically connected to the reverse bias voltage terminal, and the second electrode of the acquisition control circuit is coupled to the signal readout terminal, the driving method includes:

[0034] If the display substrate is in a normal display state, while the driving circuit maintains the driving of at least part of the driving transistors, the switch control circuit disconnects the path between the acquisition control circuit and the reverse bias voltage terminal;

[0035] If the display substrate is in a texture recognition state, while the driving of at least part of the driving transistors is maintained by the driving circuit, the path between the acquisition control circuit and the reverse bias voltage terminal is turned on by the switch control circuit.

[0036] The beneficial effects of the present invention are as follows:

[0037] Embodiments of the present invention provide a display substrate, a manufacturing method, a driving method, and a display device. The display substrate includes a base substrate and a plurality of photodetection units and a plurality of light-emitting sub-pixels located in a display area of ​​the base substrate. The orthographic projections of the photodetection units on the base substrate and the orthographic projections of the light-emitting sub-pixels on the base substrate do not overlap. Furthermore, the photodetection units include a photodetector and an acquisition control circuit for controlling the photodetector to acquire texture data. The light-emitting sub-pixels include a light-emitting device and a pixel drive circuit for driving the light-emitting device to emit light. The active layer of the driving transistor in the pixel drive circuit is made of low-temperature polysilicon material. This ensures high resolution, high response speed, high brightness, and a high aperture ratio of the display substrate. Furthermore, the active layers of at least some of the transistors in the pixel drive circuit, excluding the driving transistor, are made of metal oxide semiconductor material. This reduces power consumption of the display substrate. Furthermore, at least one film layer of the active layer of each transistor in at least some of the transistors is provided in the same layer and material as the active layer of the transistors in the acquisition control circuit. This allows the active layer of the transistors in the acquisition control circuit to be fabricated simultaneously with the at least one film layer of the active layer of each transistor in at least some of the transistors, thereby reducing manufacturing costs and ensuring the integrated texture detection function within the display substrate. Thus, transistors made of low-temperature polysilicon and transistors made of metal oxide semiconductor materials can be simultaneously utilized as functional transistors in the pixel drive circuit, ensuring that the display substrate has the advantages of both types of transistors. Furthermore, at least one film layer of the active layer of each transistor in at least some of the transistors other than the driver transistor in the pixel drive circuit can be provided in the same layer while the active layer of the transistors in the acquisition control circuit is fabricated simultaneously, thereby improving the efficiency of integrating the texture detection function within the display substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of one distribution of photodetection units and light-emitting sub-pixels in a display substrate provided by an embodiment of the present invention;

[0039] Figure 2 For the Figure 1 A schematic diagram of one of the cross-sectional structures in the direction indicated by MM;

[0040] Figure 3 For the Figure 1 A schematic diagram of one of the cross-sectional structures in the direction indicated by MM;

[0041] Figure 4 A schematic top view of a display substrate provided in an embodiment of the present invention;

[0042] Figure 5 A schematic top view of a display substrate provided in an embodiment of the present invention;

[0043] Figure 6 for Figure 5 A schematic diagram of a circuit structure for controlling any photodetection unit and at least part of the transistors;

[0044] Figure 7 for Figure 5 A schematic diagram of a circuit structure for controlling any photodetection unit and at least part of the transistors;

[0045] Figure 8 for Figure 5 A schematic diagram of a circuit structure for controlling any photodetection unit and at least part of the transistors;

[0046] Figure 9 A schematic diagram showing the relationship between the working timing g1 of at least part of the driving transistors and the working timing g2 of the photodetection unit in a display substrate provided by an embodiment of the present invention when the display substrate is in a normal display state;

[0047] Figure 10 A schematic diagram showing the relationship between the working timing g1 of at least part of the driving transistors and the working timing g2 of the photodetection unit in a display substrate provided by an embodiment of the present invention when the display substrate is in a texture recognition state;

[0048] Figure 11 For the Figure 1 A schematic diagram of one of the cross-sectional structures in the direction indicated by MM;

[0049] Figure 12 A flowchart of a method for manufacturing a display substrate provided in an embodiment of the present invention;

[0050] Figure 13 for Figure 12 A flowchart of one method of step S101;

[0051] Figure 14 for Figure 13 FIG. 1 is a flow chart of a method of step S202 in FIG. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. And in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0053] Unless otherwise defined, technical or scientific terms used in this invention shall have the same general meaning as those generally understood by persons skilled in the art in the art to which this invention pertains. Words such as "include" or "comprise" used in this invention mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0054] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present invention. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions.

[0055] In related technologies, Low Temperature Poly-silicon + Oxide (LTPO) technology is often used to make pixel driving circuits in the driving backplane of display products. This LTPO technology uses both Low Temperature Poly-silicon Thin Film Transistor (LTPSTFT) and Metal Oxide Thin Film Transistor (Oxide TFT) as functional tubes in the pixel driving circuit. Since low temperature poly-silicon thin film transistors have high mobility, they can speed up the charging speed of pixel capacitors, and metal oxide thin film transistors have lower leakage current. Combining the advantages of these two transistors will help develop high-resolution, low-power, and high-quality display products. How to integrate the texture recognition function into the screen of the display panel, thereby realizing the texture recognition function in the display area and improving the integration of the display panel, becomes extremely important.

[0056] In view of this, embodiments of the present invention provide a display substrate, a manufacturing method thereof, a driving method thereof, and a display device, for ensuring that the display device integrates texture detection while reducing the power consumption of the display device.

[0057] Combine Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a display substrate, which includes:

[0058] A base substrate 10, a plurality of photodetection units 20 and a plurality of light-emitting sub-pixels 30 located in a display area A of the base substrate 10, wherein the orthographic projections of the photodetection units 20 on the base substrate 10 and the orthographic projections of the light-emitting sub-pixels 30 on the base substrate 10 do not overlap with each other;

[0059] The photoelectric detection unit 20 includes a photoelectric detector 201 and an acquisition control circuit 202 for controlling the photoelectric detector 201 to acquire texture data;

[0060] The light-emitting sub-pixel 30 includes a light-emitting device 301 and a pixel driving circuit for driving the light-emitting device 301 to emit light. The active layer 50 of the driving transistor 302 in the pixel driving circuit is a low-temperature polycrystalline silicon material. The active layer 400 of at least some of the transistors 40 in the pixel driving circuit other than the driving transistor 302 is a metal oxide semiconductor material, and at least one film layer of the active layer 400 of each transistor in at least some of the transistors 40 is set at the same layer and material as the active layer 203 of the transistor in the acquisition control circuit 202.

[0061] In a specific implementation, the display substrate includes a base substrate 10, and a plurality of photodetection units 20 and a plurality of light-emitting sub-pixels 30 located in a display area A of the base substrate 10. The base substrate 10 may be a rigid substrate or a flexible substrate, without limitation herein. In one exemplary embodiment, the display area A includes a texture recognition area, which may completely overlap with the display area A or partially overlap with the display area A. Figure 1 The figure shows a schematic diagram of one distribution of the photodetection units 20 and the light-emitting sub-pixels 30 in the texture recognition area, where the texture recognition area completely overlaps with the display area A. Of course, the distribution of the photodetection units 20 and the light-emitting sub-pixels 30 in the texture recognition area can also be set according to actual application needs, and this is not limited here. Of course, the specific number of the multiple photodetection units 20 and the multiple light-emitting sub-pixels 30 can be set according to actual application needs, and this is not limited here.

[0062] Figure 2 For the Figure 1 In the schematic diagram of one cross-sectional structure in the direction MM shown in FIG, in a specific implementation, the photodetection unit 20 includes a photodetector 201 and an acquisition control circuit 202 for controlling the photodetector 201 to collect texture data, wherein the photodetector 201 can be configured as an organic photodiode (OPD). Furthermore, the light-emitting sub-pixel 30 includes a light-emitting device 301 and a pixel driving circuit for driving the light-emitting device 301 to emit light. In this way, texture detection and recognition can be achieved within the display area A of the display substrate.

[0063] In a specific implementation, the active layer 50 of the driver transistor 302 in the pixel driver circuit is made of low-temperature polysilicon material. Accordingly, the driver transistor 302 is a low-temperature polysilicon (LTPS) transistor. Due to the low mobility of LTPS transistors, the charging speed of the pixel capacitor can be accelerated. In addition, the active layer of at least some of the transistors 40 in the pixel driver circuit other than the driver transistor 302 is made of metal oxide semiconductor material. Accordingly, at least some of the transistors 40 are metal oxide (Oxide TFT) transistors. In this way, low-temperature polysilicon + oxide (LTPO) technology can be used to manufacture the pixel driver circuit in the driver backplane of the display product. Since metal oxide transistors have more leakage current, the pixel driver circuit combines the advantages of these two transistors, which is conducive to the development of high-resolution, low-power, and high-quality display products.

[0064] It should be noted that at least some transistors 40 may be transistors in the pixel driving circuit directly connected to the driving transistor 302. Using metal oxide semiconductor materials to make the active layer of at least some transistors 40 avoids the influence of leakage current on the gate voltage of the driving transistor 302.

[0065] In one exemplary embodiment, the driving transistor 302 can be configured as a P-type transistor and an LTPS transistor to improve mobility and enable thinner and smaller transistors with lower power consumption. Other transistors in the pixel driving circuit, except for the driving transistor 302, can be configured as N-type transistors and metal oxide semiconductor field effect transistors (MOS), thereby minimizing the effect of leakage current on the gate voltage of the driving transistor 302.

[0066] During a specific implementation, at least one film layer of the active layer 400 of each transistor in at least some of the transistors 40 is provided in the same layer and material as the active layer 203 of the transistor in the acquisition control circuit 202. In one exemplary embodiment, the active layer 400 of each transistor in at least some of the transistors 40 may be provided in the same layer and material as the active layer 203 of the transistor in the acquisition control circuit 202. In another exemplary embodiment, one film layer of each transistor in at least some of the transistors 40 may be provided in the same layer and material as the active layer 203 of the transistor in the acquisition control circuit 202. In this way, there is no need to add a separate step of preparing the active layer 203 of the transistor in the acquisition control circuit 202. Instead, a single patterning process is required to form the pattern of the active layer 400 of each transistor in at least some of the transistors 40, thereby simplifying the preparation process, saving production costs, and improving production efficiency.

[0067] In the embodiment of the present invention, Figure 3 As shown, the active layer of at least part of the transistor 40 is a composite film layer structure, which includes a high-transition structure 401 and a low-transition structure 402 that are sequentially away from the base substrate 10, and the active layer 203 of the transistor in the acquisition control circuit 202 is a single-film-layer low-transition structure 402.

[0068] Still combined Figure 3 As shown, at least part of the active layer of the transistor 40 is a composite film structure, which includes a high mobility structure 401 and a low mobility structure 402 that are sequentially away from the substrate 10, wherein the mobility range of the high mobility structure 401 can be 30cm 2 / Vs~100cm 2 / Vs, the mobility range of the low mobility structure 402 can be 5cm 2 / Vs~10cm 2 / Vs, thus increasing the charging speed of at least part of the transistor 40 for the pixel capacitor. Of course, the high mobility structure 401 and the low mobility structure 402 with corresponding mobility can be selected according to actual application needs, which is not limited here.

[0069] Still combined Figure 3 As shown, the active layer 203 of the transistor in the acquisition control circuit 202 is a single-layer low-transition structure 402, thereby avoiding the influence of leakage current on the texture data collected by the photoelectric detection unit 20, and ensuring the texture recognition accuracy.

[0070] In the embodiment of the present invention, in order to ensure the integration of the display function and the texture detection function of the display substrate, the following two implementations can be used to set the driving circuit located in the peripheral area B, but are not limited to the following two implementations.

[0071] In one exemplary embodiment, the first implementation is as follows Figure 4 As shown, specifically, the base substrate 10 includes a peripheral area B surrounding the display area A, and the peripheral area B includes a light emitting driving circuit 60, a gate driving circuit 70 and an oxide driving circuit 80, all of which are electrically connected to the pixel driving circuit, and a photodetection driving circuit 90 electrically connected to the acquisition control circuit 202;

[0072] Among them, the light-emitting driving circuit 60 is used to control the light-emitting duration of the corresponding light-emitting device 301 through the pixel driving circuit, the gate driving circuit 70 is used to control the charging of the corresponding light-emitting sub-pixel 30 through the pixel driving circuit, the oxide driving circuit 80 is used to control the driving of at least part of the transistor 40, and the photodetection driving circuit 90 is used to control the acquisition control circuit 202 to read the texture data collected by the photodetection unit 20.

[0073] In a specific implementation process, the base substrate 10 includes a peripheral area B surrounding the display area A. A schematic diagram of one distribution of the display area A and the peripheral area B is shown as follows: Figure 4 As shown, of course, the display area A and the peripheral area B can also be set according to actual application needs, which is not limited here. In addition, the peripheral area B includes a light-emitting driver circuit 60, a gate driver circuit 70, and an oxide driver circuit 80, all of which are electrically connected to the pixel driver circuit, and a photodetection driver circuit 90 electrically connected to the acquisition control circuit 202. The light-emitting driver circuit 60, the gate driver circuit 70, the photodetection driver circuit 90, and the oxide driver circuit 80 can be arranged in sequence in a direction away from the center line of the display substrate, and the orthographic projections of any two driver circuits on the base substrate 10 do not overlap. In addition, the light-emitting driver circuit 60 is used to control the light-emitting duration of the corresponding light-emitting device 301 through the pixel driver circuit, the gate driver circuit 70 is used to control the charging of the corresponding light-emitting sub-pixel 30 through the pixel driver circuit, and the oxide driver circuit 80 is used to control the drive of at least part of the transistor 40, thereby ensuring the display function of the display substrate. The photodetection driver circuit 90 is used to control the acquisition control circuit 202 to read the texture data collected by the photodetection unit 20. In this way, the display function and texture detection function of the display substrate are integrated. It should be noted that in order to ensure the driving performance of the display substrate, it is usually Figure 4 The circuit structure of the bilateral drive is shown.

[0074] In one exemplary embodiment, the second implementation is as follows Figure 5 As shown, specifically, the oxide driving circuit 80 and the photodetection driving circuit 90 are multiplexed into a driving circuit 100, which is used to control the driving of at least part of the transistor 40 while controlling the acquisition control circuit 202 to read the texture data collected by the photodetection unit 20.

[0075] The inventors have found in actual research that the oxide driving circuit 80 and the photodetection driving circuit 90 can output the same type of driving signal. Figure 5As shown, the oxide driving circuit 80 and the photodetection driving circuit 90 are multiplexed into a driving circuit 100, which is used to control the driving of at least part of the transistors 40 while controlling the acquisition control circuit 202 to read the texture data collected by the photodetection unit 20. In the specific implementation process, by multiplexing the oxide driving circuit 80 and the photodetection driving circuit 90 into one driving circuit 100, the driving circuit 100 can simultaneously output the driving signal for driving at least part of the transistors 40, and output the drive for driving the transistors in the acquisition control circuit 202, thereby improving the driving efficiency. Moreover, the control of the texture data collected by the photodetection unit 20 by the acquisition control circuit 202 is realized through the driving circuit 100, thereby ensuring the flexible control of the texture detection function and the display function of the display substrate. In addition, the oxide driving circuit 80 and the photodetection driving circuit 90 of the peripheral area B are multiplexed into one driving circuit 100. In this way, the peripheral area B on one side of the display substrate includes three driving circuits. Compared with Figure 4 The peripheral area B on one side of the display substrate includes four driving circuits, thereby realizing a narrow frame design of the display substrate.

[0076] exist Figure 5 In the exemplary embodiment shown, while at least part of the driving transistors 40 are driven, the control of the acquisition control circuit 202 to read the texture data can be implemented in the following ways, but is not limited to the following ways.

[0077] In the first implementation, Figure 6 The figure shows a schematic diagram of a circuit structure for controlling any photodetection unit 20 and the corresponding transistors of at least some of the transistors 40. Specifically, the peripheral area B includes a switch control circuit 101 electrically connected to the photodetector 201, and a first electrode of the photodetector 201 is electrically connected to a first electrode of the acquisition control circuit 202, a second electrode of the photodetector 201 is electrically connected to a first electrode of the switch control circuit 101, a second electrode of the switch control circuit 101 is electrically connected to a reverse bias voltage terminal Vbais, and a second electrode of the acquisition control circuit 202 is coupled to a signal readout terminal Rd. If the display substrate is in a normal display state, the drive circuit 100 maintains the driving of at least some of the transistors 40 while the switch control circuit 101 is used to disconnect the path between the acquisition control circuit 202 and the reverse bias voltage terminal Vbais. If the display substrate is in a texture recognition state, the drive circuit maintains the driving of at least some of the transistors 40 while the switch control circuit 101 is used to connect the path between the acquisition control circuit 202 and the reverse bias voltage terminal Vbais.

[0078] Still combined Figure 6As shown, peripheral area B includes a switch control circuit 101 electrically connected to a photodetector 201. The switch control circuit 101 includes an N-type MOS transistor, and the acquisition control circuit 202 includes an N-type MOS transistor. This reduces leakage current during texture recognition and ensures texture recognition accuracy. The first electrode of the photodetector 201 is electrically connected to the first electrode of the acquisition control circuit 202, and the second electrode of the photodetector 201 is electrically connected to the first electrode of the switch control circuit 101. The second electrode of the switch control circuit 101 is electrically connected to the reverse bias voltage terminal Vbais, and the second electrode of the acquisition control circuit 202 is electrically connected to the signal readout terminal Rd. If the display substrate is in a normal display state, the driver circuit 100 maintains the driving of at least some transistors 40 while the switch control circuit 101 is used to disconnect the path between the acquisition control circuit 202 and the reverse bias voltage terminal Vbais. In this manner, the display substrate cannot perform texture detection and only displays. If the display substrate is in the texture recognition state, the driver circuit 100 maintains driving of at least some transistors 40 while the switch control circuit 101 is used to connect the path between the acquisition control circuit 202 and the reverse bias voltage terminal Vbais. This allows the display substrate to simultaneously detect textures while displaying. By disconnecting and connecting the switch control circuit 101, flexible control of texture detection on the display substrate is achieved, improving the user experience of the display substrate.

[0079] In the second implementation, Figure 7 The figure shows a schematic diagram of a circuit structure for controlling any photodetection unit 20 and the transistors corresponding to at least some of the transistors 40. Specifically, a switch control circuit 101 is provided for each row of photodetection units 20 in the texture recognition area. A multiplexer (MUX) can be used to control the switch control circuit 101, thereby controlling the conduction and disconnection of the path between the acquisition control circuit 202 and the reverse bias voltage terminal Vbais. For example, if the texture recognition area includes 256 rows of photodetection units, four MUXs can be used to control the switch control circuit 101. In this way, flexible control of texture detection on the display substrate is achieved.

[0080] In the third implementation, Figure 8The figure shows a schematic diagram of a circuit structure for controlling any photodetection unit 20 and the corresponding transistors of at least part of the transistors 40. A switch control circuit 101 electrically connected to the signal readout terminal Rd is provided. If the display substrate is in a normal display state, the drive circuit 100 disconnects the switch control circuit 101 while maintaining the drive of at least part of the transistors 40, thereby disconnecting the path between the acquisition control circuit 202 and the signal readout terminal Rd. If the display substrate is in a texture recognition state, the drive circuit 100 connects the switch control circuit 101 while maintaining the drive of at least part of the transistors 40, thereby connecting the path between the collection control circuit 202 and the signal readout terminal Rd. In this way, flexible control of the texture detection of the display substrate is achieved. In the specific implementation process, according to Figure 8 When the switch control circuit 101 is set as shown, in order to ensure control accuracy, it is necessary to consider the matching between the switch control circuit 101 and the detection integrated circuit (IC) for reading texture data according to actual application needs, which is not described in detail here.

[0081] It should be noted that, no matter which implementation method is adopted, when the display substrate is in a normal display state, the relationship between the working timing g1 of at least part of the driving transistor 40 and the working timing g2 of the corresponding photodetection unit 20 is shown in the following diagram: Figure 9 When the display substrate is in the texture recognition state, at least part of the working timing g1 of the driving transistor 40 and the corresponding working timing g2 of the photodetection unit 20 are as shown; Figure 10 As shown. The switch control circuit 101 in the embodiment of the present invention may include a single or multiple switching transistors. The number and connection method of the switching transistors can be set according to actual application requirements and are not limited here. The specific structures of the light-emitting drive circuit 60, the gate drive circuit 70, the pixel drive circuit, etc. can be implemented with reference to the techniques in the related art and will not be described in detail here.

[0082] In the embodiment of the present invention, Figure 11 As shown, the photodetector 201 includes a first conversion electrode 2011, an organic conversion layer 2012, and a second conversion electrode 2013 that are sequentially away from the base substrate 10, and the light-emitting device 301 includes a first light-emitting electrode 3011, an organic light-emitting layer 3012, and a second light-emitting electrode 3013 that are sequentially away from the base substrate 10;

[0083] The first conversion electrode 2011 and the first light-emitting electrode 3011 are provided in the same layer and made of the same material; and / or,

[0084] The second conversion electrode 2013 and the second light-emitting electrode 3013 are provided in the same layer and made of the same material.

[0085] Still combined Figure 11As shown, the photodetector 201 includes a first conversion electrode 2011, an organic conversion layer 2012, and a second conversion electrode 2013, which are sequentially separated from the base substrate 10. Furthermore, the photodetector 201 also includes a hole transport layer and a hole injection layer located between the first conversion electrode 2011 and the organic photoelectric conversion layer, and an electron transport layer and an electron injection layer located between the second conversion electrode 2013 and the organic photoelectric conversion layer.

[0086] In the specific implementation process, Figure 11 As shown, the light-emitting device 301 includes a first light-emitting electrode 3011, an organic light-emitting layer 3012, and a second light-emitting electrode 3013, which are sequentially located away from the base substrate 10. In one exemplary embodiment, the first light-emitting electrode 3011 of the light-emitting device 301 can be configured as an anode, and the second light-emitting electrode 3013 can be configured as a cathode. Furthermore, the light-emitting device 301 can also include a hole transport layer and a hole injection layer located between the first light-emitting electrode 3011 and the organic light-emitting layer 3012, and an electron transport layer and an electron injection layer located between the second light-emitting electrode 3013 and the organic light-emitting layer 3012.

[0087] It should be noted that the light-emitting device 301 in the embodiment of the present invention can be configured as an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), etc. In addition, a general pixel driving circuit can include a driving transistor 302, a switching transistor and other multiple transistors and a storage capacitor. Its specific structure and operating principle can be the same as those in the prior art and are not described in detail here.

[0088] In one exemplary embodiment, Figure 11 As shown, the first conversion electrodes 2011 and the first light-emitting electrodes 3011 can be provided in the same layer and made of the same material. This eliminates the need for a separate step for preparing the first conversion electrodes 2011. Instead, both the first conversion electrodes 2011 and the first light-emitting electrodes 3011 can be patterned in a single process, thereby simplifying the manufacturing process, reducing production costs, and improving production efficiency. It should be noted that the first conversion electrodes 2011 and the first light-emitting electrodes 3011 are spaced apart from each other to avoid short circuits and ensure the performance of the display substrate.

[0089] Still combined Figure 11As shown, the second conversion electrodes 2013 and the second light-emitting electrodes 3013 can be provided in the same layer and made of the same material. This eliminates the need for a separate step for preparing the second conversion electrodes 2013. Instead, both the second conversion electrodes 2013 and the second light-emitting electrodes 3013 can be patterned in a single process, thereby simplifying the manufacturing process, reducing production costs, and improving production efficiency. It should be noted that each second conversion electrode 2013 and each second light-emitting electrode 3013 can be formed into a fully integrated structure. The resulting fully-surface conductive layer serves as both the second light-emitting electrodes 3013 and the second conversion electrode 2013, ensuring the performance of the display substrate.

[0090] In the embodiment of the present invention, still combined with Figure 11 As shown, the gates of the transistors in the acquisition control circuit 202 and the gates of the transistors in the pixel driving circuit are provided on the same layer and made of the same material. This eliminates the need to separately fabricate the gates of the transistors in the acquisition control circuit 202, and allows the second conversion electrode 2013 and the second light-emitting electrode 3013 to be patterned in a single process, thereby simplifying the manufacturing process, saving production costs, and improving production efficiency.

[0091] It should be noted that if Figure 2 As shown, in addition to the film layer structure mentioned above, the display substrate in the embodiment of the present invention may also include structures such as a light shielding layer 110, a buffer layer 111, a first gate insulating layer 112, a first gate layer 113, a second gate insulating layer 114, a second gate layer 115, an interlayer insulating layer 116, a source and drain layer 117, a flat layer 118, and a pixel definition layer 119. The specific settings can refer to the implementation in the relevant technology and will not be described in detail here.

[0092] Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the above-mentioned display substrate provided by an embodiment of the present invention. The principle of solving the problem of this display device is similar to that of the aforementioned display substrate, so the implementation of this display device can refer to the implementation of the aforementioned display substrate, and the repeated parts will not be repeated. In the specific implementation process, the display device provided by the embodiment of the present invention can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, etc. Other essential components of the display device should be understood by ordinary technicians in this field, and will not be repeated here, nor should they be used as a limitation to the present invention.

[0093] Based on the same inventive concept, Figures 12 to 14 As shown, an embodiment of the present invention further provides a method for manufacturing the display substrate as described above, the manufacturing method comprising:

[0094] S101: forming the pixel driving circuit on the substrate and forming the acquisition control circuit at the same time;

[0095] S102: forming the light-emitting device on a side of the pixel driving circuit away from the substrate, and forming the photodetector on a side of the acquisition control circuit away from the substrate;

[0096] S103: forming the light-emitting sub-pixel including the pixel driving circuit and the light-emitting device, and forming the photodetection unit including the photodetector and the acquisition control circuit;

[0097] Wherein, step S101: forming the pixel driving circuit on the substrate and forming the acquisition control circuit at the same time, includes:

[0098] S201: forming an active layer of the driving transistor on the substrate by using a low-temperature polysilicon material;

[0099] S202: using a metal oxide semiconductor material to manufacture at least one film layer of the active layer of each transistor in at least part of the transistors 40 and the active layer of the transistor in the acquisition control circuit in the same layer;

[0100] S203: forming the acquisition control circuit while forming the pixel driving circuit according to the patterns of the active layers.

[0101] In an embodiment of the present invention, step S202: using a metal oxide semiconductor material to manufacture at least one film layer of the active layer of each transistor in the at least part of the transistors and the active layer of the transistor in the acquisition control circuit in the same layer, includes:

[0102] S301: forming a patterned high-pass structure at a position of each transistor in the at least part of the transistors;

[0103] S302: forming a patterned low-transition structure on a side of the high-transition structure away from the substrate, and forming a patterned low-transition structure at a position of a transistor in the acquisition control circuit;

[0104] S303: forming an active layer of each transistor in the at least part of the transistors according to the high-transition structure and the low-transition structure, and forming an active layer of the transistors in the acquisition control circuit according to the low-transition structure.

[0105] by Figure 3 Taking the display substrate shown in FIG. 1 as an example, during the manufacturing process, the specific implementation process of steps S101 to S103, steps S201 to S203, and steps S301 to S303 is as follows:

[0106] First, a light shielding layer 110 is formed and patterned on a substrate 10. A buffer layer 111 is then formed. This buffer layer 111 may be SiOx and have a thickness ranging from 2000 angstroms to 5000 angstroms. A patterned active layer made of LTPS is then formed at the location of the driver transistor 302 and on the side facing away from the buffer layer 111. A patterned high-transition structure 401 made of a metal oxide semiconductor material is then formed at the corresponding locations of at least a portion of the transistors 40 using an atomic layer deposition (ALD) process. A patterned low-transition structure 402 made of a metal oxide semiconductor material is then formed on the side of the high-transition structure 401 facing away from the substrate 10, also using the ALD process. Simultaneously, a patterned low-transition structure 402 made of a metal oxide semiconductor material is formed at the corresponding locations of the transistors in the acquisition control circuit 202. This forms the active layers 400 of at least a portion of the transistors 40 and the active layers of the transistors in the acquisition control circuit 202. Next, a first gate insulating layer 112, a patterned first gate layer 113, a second gate insulating layer 114, a patterned second gate layer 115, an interlayer insulating layer 116, and a source / drain electrode layer 117 are sequentially formed. The source / drain electrode layer 117 is connected to the corresponding active layer through vias. A planar layer 118 is then formed covering the aforementioned structure. A patterned pixel definition layer 119 is then formed. The first light-emitting electrode 3011 and the first conversion electrode 2011 are then fabricated on the same layer. Each electrode is electrically connected to the source / drain electrode layer 117 through vias in corresponding locations in the planar layer 118. An organic light-emitting layer 3012 and an organic conversion layer 2012 are then formed on the side of the planar layer 118 facing away from the base substrate 10. A single conductive layer is then formed to form the second light-emitting electrode 3013 and the second conversion electrode 2013. This completes the fabrication of the photodetection unit 20 and the light-emitting sub-pixel 30. Generally, the display substrate may further include a packaging layer, a touch function layer and other structures. The specific manufacturing process thereof may be the same as that in the prior art and will not be described in detail here.

[0107] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0108] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. A display substrate, characterized in that: include: A base substrate, a plurality of photodetection units and a plurality of light-emitting sub-pixels located in a display area of ​​the base substrate, wherein orthographic projections of the photodetection units on the base substrate and orthographic projections of the light-emitting sub-pixels on the base substrate do not overlap with each other; The photoelectric detection unit includes a photoelectric detector and an acquisition control circuit for controlling the photoelectric detector to acquire texture data; The light-emitting sub-pixel includes a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light, the active layer of the driving transistor in the pixel driving circuit is a low-temperature polysilicon material, the active layers of at least some of the transistors in the pixel driving circuit other than the driving transistor are a metal oxide semiconductor material, and at least one film layer of the active layer of each transistor in the at least some of the transistors is arranged in the same layer and material as the active layer of the transistor in the acquisition control circuit, and the active layer of the driving transistor is arranged in the same layer as the active layer of the transistor in the acquisition control circuit; Among them, the active layer of at least part of the transistor is a composite film layer structure, and the composite film layer structure includes a high-transition structure and a low-transition structure that are sequentially away from the substrate. The active layer of the transistor in the acquisition control circuit is a single-film-layer low-transition structure, and the low-transition structure of the composite film layer structure is arranged in the same layer and material as the single-film-layer low-transition structure of the transistor in the acquisition control circuit.

2. The display substrate according to claim 1, wherein The base substrate includes a peripheral area surrounding the display area, the peripheral area including a light emitting driving circuit, a gate driving circuit and an oxide driving circuit electrically connected to the pixel driving circuit, and a photoelectric detection driving circuit electrically connected to the acquisition control circuit; Among them, the light-emitting driving circuit is used to control the light-emitting duration of the corresponding light-emitting device through the pixel driving circuit, the gate driving circuit is used to control the charging of the corresponding light-emitting sub-pixel through the pixel driving circuit, the oxide driving circuit is used to control the driving of at least part of the transistor, and the photodetection driving circuit is used to control the acquisition control circuit to read the texture data collected by the photodetection unit.

3. The display substrate according to claim 2, wherein: The oxide driving circuit and the photodetection driving circuit are multiplexed into one driving circuit, which is used to control the driving of at least part of the transistors while controlling the acquisition control circuit to read the texture data collected by the photodetection unit.

4. The display substrate according to claim 3, wherein: The peripheral area includes a switch control circuit electrically connected to the photodetector, and the first electrode of the photodetector is electrically connected to the first electrode of the acquisition control circuit, the second electrode of the photodetector is electrically connected to the first electrode of the switch control circuit, the second electrode of the switch control circuit is electrically connected to the reverse bias voltage terminal, and the second electrode of the acquisition control circuit is coupled to the signal readout terminal. If the display substrate is in a normal display state, the drive circuit maintains the drive of at least part of the transistors while the switch control circuit is used to disconnect the path between the acquisition control circuit and the reverse bias voltage terminal. If the display substrate is in a texture recognition state, the drive circuit maintains the drive of at least part of the transistors while the switch control circuit is used to connect the path between the acquisition control circuit and the reverse bias voltage terminal.

5. The display substrate according to any one of claims 1 to 4, wherein: The photodetector comprises a first conversion electrode, an organic conversion layer, and a second conversion electrode which are sequentially away from the base substrate; the light emitting device comprises a first light emitting electrode, an organic light emitting layer, and a second light emitting electrode which are sequentially away from the base substrate; The first conversion electrode and the first light-emitting electrode are provided in the same layer and made of the same material; and / or, The second conversion electrode and the second light-emitting electrode are provided in the same layer and made of the same material.

6. The display substrate according to claim 5, wherein: The gate of the transistor in the acquisition control circuit and the gate of the transistor in the pixel driving circuit are provided in the same layer and the same material.

7. The display substrate according to claim 6, wherein: At least some of the transistors are transistors in the pixel driving circuit that are directly connected to the driving transistor.

8. A display device, characterized in that: include: The display substrate according to any one of claims 1 to 7.

9. A method for manufacturing a display substrate according to any one of claims 1 to 7, characterized in that: include: The pixel driving circuit is formed on the substrate, and the acquisition control circuit is formed at the same time; The light emitting device is formed on a side of the pixel driving circuit away from the substrate, and the photodetector is formed on a side of the acquisition control circuit away from the substrate; forming the light-emitting sub-pixel including the pixel driving circuit and the light-emitting device, and forming the photodetection unit including the photodetector and the acquisition control circuit; Wherein, the pixel driving circuit is formed on the substrate and the acquisition control circuit is formed at the same time, including: On the base substrate, an active layer of the driving transistor is formed by using a low temperature polysilicon material; At least one film layer of the active layer of each transistor in at least some of the transistors and the active layer of the transistor in the acquisition control circuit are fabricated in the same layer using a metal oxide semiconductor material; wherein the active layer of the driving transistor is provided in the same layer as the active layer of the transistor in the acquisition control circuit; According to the patterns of the active layers, the acquisition control circuit is formed while forming the pixel driving circuit; The manufacturing of at least one film layer of the active layer of each transistor in at least part of the transistors and the active layer of the transistor in the acquisition control circuit on the same layer includes: forming a patterned high-pass structure at a position of each transistor in the at least part of the transistors; While forming a patterned low-transition structure on a side of the high-transition structure away from the substrate, a patterned low-transition structure is formed at the position of the transistor in the acquisition control circuit; The active layer of each transistor in the at least part of the transistors is formed according to the high-transition structure and the low-transition structure, and the active layer of the transistor in the acquisition control circuit is formed according to the low-transition structure.

10. A method for driving a display substrate according to any one of claims 1 to 7, characterized in that: The peripheral area of ​​the base substrate of the display substrate includes a light emitting drive circuit, a gate drive circuit, and an oxide drive circuit, all of which are electrically connected to the pixel drive circuit, and a photodetection drive circuit electrically connected to the acquisition control circuit. The oxide drive circuit and the photodetection drive circuit are multiplexed into one drive circuit. The peripheral area includes a switch control circuit electrically connected to the photodetector, a first electrode of the photodetector is electrically connected to a first electrode of the acquisition control circuit, a second electrode of the photodetector is electrically connected to a first electrode of the switch control circuit, a second electrode of the switch control circuit is electrically connected to a reverse bias voltage terminal, and a second electrode of the acquisition control circuit is coupled to a signal readout terminal. The driving method includes: If the display substrate is in a normal display state, while the driving circuit maintains the driving of at least part of the driving transistors, the switch control circuit disconnects the path between the acquisition control circuit and the reverse bias voltage terminal; If the display substrate is in a texture recognition state, while the driving of at least part of the driving transistors is maintained by the driving circuit, the path between the acquisition control circuit and the reverse bias voltage terminal is turned on by the switch control circuit.

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