Pixel structure, image sensor chip, camera module and electronic device

Abstract

An embodiment of the present application provides a pixel structure, an image sensor chip, a camera module, and an electronic device. The pixel structure includes: a beam splitter and a photodiode; the photodiode includes a light-receiving surface, the light-receiving surface includes a plurality of light-receiving regions, and the beam splitter faces the light-receiving surface; the beam splitter includes a stacked first optical layer and a second optical layer, the first optical layer includes a first light-transmitting region and a second light-transmitting region, and the second optical layer includes a third light-transmitting region and a fourth light-transmitting region; wherein, the transmittances of the first light-transmitting region and the second light-transmitting region are different, the transmittances of the third light-transmitting region and the fourth light-transmitting region are different, and in the direction perpendicular to the first optical layer, the projections of the first light-transmitting region and the third light-transmitting region do not overlap; the incident light forms light beams of different bands through the beam splitter, and the light beams of different bands are respectively received by the corresponding light-receiving regions.

Description

Technical Field

[0001] This application relates to the technical field of electronic devices, and particularly to a pixel structure, an image sensor chip, a camera module, and an electronic device. Background Art

[0002] With the development of technology, electronic devices are increasingly widely used. Generally, an electronic device includes a camera module, an image sensor chip is disposed in the camera module, and a pixel structure is disposed on the image sensor chip. When taking a picture with an electronic device, the incident light will ultimately irradiate on the pixel structure, and the pixel structure can convert the incident light into an electrical signal and transmit it to the image sensor chip.

[0003] In related technologies, the pixel structure includes a microlens structure, a filter, and a photodiode, and the microlens structure, the filter, and the photodiode are stacked. The incident light can pass through the microlens structure, then pass through the filter, and finally irradiate on the photodiode, and the photodiode can convert the optical signal into an electrical signal.

[0004] However, in related technologies, when the incident light passes through the filter, the filter will absorb part of the incident light, affecting the conversion efficiency of the photodiode.

[0005] Application Content

[0006] Embodiments of the present application provide a pixel structure, an image sensor chip, a camera module, and an electronic device to solve the problem in related technologies that when the incident light passes through the filter, the filter will absorb part of the incident light, affecting the conversion efficiency of the photodiode.

[0007] To solve the above technical problems, the present application is implemented as follows:

[0008] In a first aspect, embodiments of the present application provide a pixel structure, the pixel structure including: a light splitting element and a photodiode;

[0009] The photodiode includes a light receiving surface, the light receiving surface includes a plurality of light receiving regions, and the light splitting element faces the light receiving surface;

[0010] The light splitting element includes a stacked first optical layer and a second optical layer, the first optical layer includes a first light transmission region and a second light transmission region, and the second optical layer includes a third light transmission region and a fourth light transmission region;

[0011] Wherein, the transmittance of the first light transmission region and the second light transmission region is different, the transmittance of the third light transmission region and the fourth light transmission region is different, in a direction perpendicular to the first optical layer, the projections of the first light transmission region and the third light transmission region do not overlap; the incident light forms light beams of different wavelength bands through the light splitting element, and the light beams of different wavelength bands are respectively received by corresponding light receiving regions.

[0012] In a second aspect, an embodiment of the present application provides an image sensor chip, which includes a plurality of pixel structures as described in the first aspect above, and the plurality of pixel structures are closely arranged.

[0013] In a third aspect, an embodiment of the present application provides a camera module, which includes the image sensor as described in the second aspect above.

[0014] In a fourth aspect, an embodiment of the present application provides an electronic device, which includes a housing and the camera module as described in the third aspect above, and a part of the structure of the camera module is embedded in the housing.

[0015] In the embodiment of the present application, since the light splitting element includes a single-layer structure arranged in layers, the single-layer structure is spliced by at least two optical units in two layers, the refractive indices of any two of the at least two optical units are different, and the optical unit is a light-transmitting structure. Therefore, after the incident light irradiates on the light splitting element, the incident light will pass through the light splitting element, and the incident light will be split into three or four beams of different wavelength bands. Since the light splitting element faces the light receiving surface, and the light receiving surface includes four light receiving regions, after the incident light is split into three or four beams of different wavelength bands, the beams of different wavelength bands will respectively irradiate on the light receiving regions corresponding to the beams. In the embodiment of the present application, by providing the light splitting element, the light splitting element can split the incident light into three or four beams of different wavelength bands, so that the beams of different wavelength bands respectively irradiate on the light receiving regions corresponding to the beams, thereby avoiding partial light of the beam irradiating on the light receiving region being filtered by the filter, resulting in loss of the energy of the incident light, so that the energy of the incident light received by the light receiving region can be increased, and the conversion efficiency of the photodiode is higher. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram showing a pixel structure provided by an embodiment of the present application;

[0017] Figure 2 A schematic diagram showing a light splitting element provided by an embodiment of the present application;

[0018] Figure 3 A schematic diagram showing the principle of a pixel structure provided by an embodiment of the present application;

[0019] Figure 4 A schematic diagram showing a first optical unit provided by an embodiment of the present application;

[0020] Figure 5 A schematic diagram showing a first optical layer provided by an embodiment of the present application;

[0021] Figure 6 A schematic diagram showing a pixel structure in the related art.

[0022] Reference numerals:

[0023] 10: Beam splitter; 20: Photodiode; 11: First optical layer; 12: Second optical layer; 21: Light-receiving area; 100: Microlens structure; 200: Filter. Detailed implementation manners

[0024] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0025] It should be understood that the "one embodiment" or "an embodiment" mentioned throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of the present application. Therefore, the appearances of "in one embodiment" or "in an embodiment" throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures, or characteristics can be combined in one or more embodiments in any suitable manner.

[0026] Refer to Figure 1 , which shows a schematic diagram of a pixel structure provided by an embodiment of the present application; refer to Figure 2 , which shows a schematic diagram of a beam splitter provided by an embodiment of the present application; refer to Figure 3 , which shows a schematic diagram of the principle of a pixel structure provided by an embodiment of the present application; refer to Figure 4 , which shows a schematic diagram of an optical unit provided by an embodiment of the present application; refer to Figure 5 , which shows a schematic diagram of a single-layer structure provided by an embodiment of the present application. As Figures 1 to 5 shown, the pixel structure includes: a beam splitter 10 and a photodiode 20.

[0027] The photodiode 20 includes a light-receiving surface, the light-receiving surface includes a plurality of light-receiving areas 21, the beam splitter 10 faces the light-receiving surface, the beam splitter 10 includes a stacked first optical layer 11 and a second optical layer 12, the first optical layer 11 includes a first light-transmitting area and a second light-transmitting area, and the second optical layer 12 includes a third light-transmitting area and a fourth light-transmitting area. Among them, the transmittances of the first light-transmitting area and the second light-transmitting area are different, the transmittances of the third light-transmitting area and the fourth light-transmitting area are different, and in the direction perpendicular to the first optical layer, the projections of the first light-transmitting area and the third light-transmitting area do not overlap; the incident light forms light beams of different wavelength bands through the beam splitter, and the light beams of different wavelength bands are respectively received by the corresponding light-receiving areas 21.

[0028] In the embodiment of the present application, since the beam splitter 10 includes a first optical layer 11 and a second optical layer 12 which are stacked, the first optical layer 11 includes a first light-transmitting area and a second light-transmitting area, and the second optical layer 12 includes a third light-transmitting area and a fourth light-transmitting area. Among them, the transmittances of the first light-transmitting area and the second light-transmitting area are different, and the transmittances of the third light-transmitting area and the fourth light-transmitting area are different. In the direction perpendicular to the first optical layer, the projections of the first light-transmitting area and the third light-transmitting area do not overlap. Therefore, after the incident light irradiates on the beam splitter 10, the incident light will pass through the beam splitter 10, and the incident light will be divided into light beams of multiple different wavelength bands. Since the beam splitter 10 faces the light-receiving surface, and the light-receiving surface includes a plurality of light-receiving areas 21, after the incident light is divided into light beams of multiple different wavelength bands, the light beams of different wavelength bands will respectively irradiate on the light-receiving areas 21 corresponding to the light beams. In the embodiment of the present application, by providing the beam splitter 10, the beam splitter 10 can divide the incident light into light beams of multiple different wavelength bands, so that the light beams of different wavelength bands respectively irradiate on the light-receiving areas 21 corresponding to the light beams, thereby avoiding partial light rays of the light beam irradiating on the light-receiving area 21 being filtered by the filter 200, resulting in loss of the energy of the incident light, and thus the energy of the incident light received by the light-receiving area 21 can be increased, making the conversion efficiency of the photodiode 20 higher.

[0029] It should be noted that, in the embodiment of the present application, the plurality of light-receiving areas 21 may include a red light area, a blue light area and two green light areas. The plurality of light-receiving areas 21 may also include a red light area, a blue light area and a green light area. Among them, the colors of the light beams of different wavelength bands are different. For example, the light with a wavelength band of 400 nanometers to 500 nanometers is blue light, the light with a wavelength band of 500 nanometers to 600 nanometers is green light, and the light with a wavelength band of 600 nanometers to 700 nanometers is red light. In addition, in the embodiment of the present application, the photodiode 20 is used to convert the optical signal into an electrical signal, that is, the light irradiating on the light-receiving surface of the photodiode 20, that is, the optical signal, can be converted into an electrical signal by the photodiode 20.

[0030] It should be noted that, in the embodiment of the present application, when the incident light irradiates on the beam splitter 10, the beam splitter 10 can divide the incident light into three or four different wavelength bands of light beams, so that the light beams of different wavelength bands respectively irradiate on the light-receiving areas 21 corresponding to the light beams.

[0031] In addition, in the embodiment of the present application, in the direction perpendicular to the first optical layer, the projections of the second light-transmitting area and the fourth light-transmitting area do not overlap. Of course, the projections of the second light-transmitting area and the fourth light-transmitting area may also overlap. In this regard, the embodiment of the present application does not make any limitation here.

[0032] In addition, in the related art, such as Figure 6As shown, the pixel structure includes a microlens structure 100, a color filter 200, and a photodiode 20. The photodiode 20 includes a light-receiving surface, and the light-receiving surface includes four light-receiving regions 21. The microlens structure 100, the color filter 200, and the photodiode 20 are stacked, and one color filter 200 corresponds to one light-receiving region 21. After the incident light irradiates on the microlens structure 100, the incident light passes through the microlens structure 100 and then passes through the color filter 200. The color filter 200 filters out the stray light in the incident light, so that the color of the light beam after passing through the color filter 200 is the same as the color of the light-receiving region 21 corresponding to the color filter 200. For example, the four light-receiving regions 21 are a red light region, a blue light region, and two green light regions respectively. The red light region corresponds to a red light color filter 200, the blue light region corresponds to a blue light color filter 200, and the green light region corresponds to a green light color filter 200. After the incident light passes through the microlens, the incident light irradiates on the color filter 200. At this time, the red light color filter 200 can filter out the stray light in the incident light and only allow the red light to pass through the red light color filter 200 and irradiate on the red light region. The green light color filter 200 can filter out the stray light in the incident light and only allow the green light to pass through the green light color filter 200 and irradiate on the green light region. The blue light color filter 200 can filter out the stray light in the incident light and only allow the blue light to irradiate on the blue light region.

[0033] However, the stray light filtered out by the color filter 200 of each color also includes light of other colors. For example, when the red light color filter 200 filters out the stray light in the incident light, the stray light also includes green light and blue light. It is equivalent to that the red light color filter 200 absorbs the blue light and green light, so that the blue light and green light irradiated on the blue light region and the green light region are less, resulting in a large loss of the energy in the incident light. That is, in the related art, the total energy of the light beams irradiated on the four light-receiving regions 21 is less than the total energy of the incident light, and a part of the energy is absorbed by the color filter 200.

[0034] In the embodiment of the present application, by providing a beam splitter 10, when the incident light passes through the beam splitter 10, the incident light is divided into light beams of multiple bands, and the light beams of different bands irradiate on the light-receiving regions 21 of different colors, so as to equivalently divide the incident light, and the light beams of different bands after division irradiate on different light-receiving regions 21. Thus, the total energy of the light beams irradiated on the four light-receiving regions 21 is close to or equal to the total energy of the incident light. That is, the energy loss of the incident light is less or there is no loss, so that the energy of the light beam irradiated on each light-receiving region 21 is enhanced.

[0035] In addition, in the embodiments of the present application, the beam splitter 10 can be formed by photolithography. That is, by photolithography, a first optical layer 11 is etched on a substrate first. The substrate can be a light-transmitting material. Then, another light-transmitting material is filled in the etched position to form a complete optical layer. Then, the second optical layer 12 is formed in the same way, and multiple first optical layers 11 and multiple second optical layers 12 can be formed. Then, the multiple first optical layers 11 and the multiple second optical layers 12 are stacked to form the beam splitter 10. Of course, the beam splitter 10 can also be formed by nanoimprinting technology or by three-dimensional printing. In this regard, the embodiments of the present application do not limit this here.

[0036] In addition, in the embodiments of the present application, when the incident light is visible light, the beam splitter 10 transmits the incident light and divides the incident light into three beams with different wavelength bands; when the incident light includes visible light and invisible light, the beam splitter 10 transmits the incident light and divides the incident light into four beams with different wavelength bands.

[0037] Among them, visible light refers to white light, and invisible light includes infrared light, ultraviolet light, etc. Among them, the wavelength range of visible light is 380 nanometers to 750 nanometers, and the wavelength of invisible light is greater than 750 nanometers.

[0038] In addition, when the incident light is visible light, at this time, after the visible light passes through the beam splitter 10, the visible light can be divided into red light, green light, and blue light. When the incident light includes visible light and invisible light, for example, the incident light includes white light and infrared light. At this time, after the white light and the infrared light pass through the beam splitter 10, the white light is divided into red light, green light, and blue light, and the wavelength band of the infrared light is not affected. That is, when the incident light includes white light and infrared light, at this time, the light passing through the beam splitter 10 includes red light, blue light, green light, and infrared light.

[0039] For example, as Figure 3 shown, the incident light is white light. After the white light passes through the beam splitter 10, the white light is divided into red light, blue light, and green light. The red light is irradiated on the red light area, the green light is irradiated on the green light area, and the blue light is irradiated on the blue light area. Among them, the red light area, the blue light area, and the green light area are all light-receiving areas 21.

[0040] It should be noted that in the embodiments of the present application, the incident light can be divided into three or four bands of light beams. It is precisely based on the stacked first optical layer 11 and second optical layer 12 of the beam splitter 10. The first optical layer 11 includes a first light-transmitting area and a second light-transmitting area, and the second optical layer 12 includes a third light-transmitting area and a fourth light-transmitting area. Therefore, when the incident light passes through the beam splitter 10, the incident light sequentially passes through different light-transmitting areas. When the incident light passes through different light-transmitting areas, due to the different transmittances of the first light-transmitting area and the second light-transmitting area, and the different transmittances of the third light-transmitting area and the fourth light-transmitting area, and the projections of the first light-transmitting area and the third light-transmitting area do not overlap, the incident light undergoes different refractions, so that after the incident light passes through the beam splitter 10, the incident light can be divided into three or four bands of light beams.

[0041] In addition, the first light-transmitting area and the second light-transmitting area can be arranged in a preset manner. Of course, they can also be arranged according to actual needs. For example, as Figure 5 shown, the first optical layer includes a first light-transmitting area and a second light-transmitting area, where the filled squares represent the first light-transmitting area and the blank squares represent the second light-transmitting area.

[0042] In addition, in the embodiments of the present application, the first light-transmitting area may include a plurality of first optical units, and the second light-transmitting area may include a plurality of second optical units. The first optical units and the second optical units have the same shape and equal size, and the transmittances of the first optical units and the second optical units are different. For example, as Figure 5 shown, one filled square in the filled squares represents one first optical unit, and one blank square in the blank squares represents one second optical unit.

[0043] When the first optical units and the second optical units have the same shape and equal size, at this time, when the first optical units and the second optical units are respectively spliced to form the first light-transmitting area and the second light-transmitting area, and then the first optical layer 11 is formed, it is convenient for splicing, and the thickness of the formed first optical layer 11 is uniform.

[0044] In addition, in the embodiments of the present application, the third light-transmitting area may include a plurality of third optical units, and the fourth light-transmitting area may include a plurality of fourth optical units. The third optical units and the fourth optical units have the same shape and equal size, and the transmittances of the third optical units and the fourth optical units are different..

[0045] In the embodiments of the present application, the sorting method of the optical units with different refractive indexes in the first light-transmitting region and the second light-transmitting region can be changed, that is, the sorting method of the first optical unit and the second optical unit is changed, so that the beam splitter 10 can divide visible light into three bands of light beams, and divide visible light and invisible light into four bands of light beams. Among them, when the beam splitter 10 only divides visible light into three bands of light beams, at this time, the beam splitter 10 is equivalent to having three channels. When the beam splitter 10 can divide visible light and invisible light into four bands of light beams, at this time, the beam splitter 10 is equivalent to having four channels. When the beam splitter 10 has four channels, when the optical structure is applied to an image sensor chip and then the image sensor chip is applied to a camera module, at this time, the infrared filter 200 in the camera module can be saved, that is, the infrared filter 200 is not required in the camera module, thereby saving the cost of the camera module. Among them, the camera module generally includes a housing, an infrared filter 200, and an image sensor chip.

[0046] In addition, when the first optical layer includes two optical units with different refractive indexes, the difference in refractive indexes between the two optical units with different refractive indexes is relatively large, that is, the difference in refractive indexes between the two optical units with different refractive indexes needs to be greater than or equal to a preset threshold. When the first optical layer includes three optical units with different refractive indexes, the difference in refractive indexes between any two optical units with different refractive indexes is relatively large, that is, the difference in refractive indexes between any two optical units with different refractive indexes is greater than or equal to a preset threshold.

[0047] For example, the preset threshold is 2. When the first optical layer includes optical unit A and optical unit B, the difference in refractive indexes between optical unit A and optical unit B is greater than or equal to 2. When the first optical layer 11 includes three optical units, that is, the first optical layer 11 includes optical unit A, optical unit B, and optical unit C, at this time, the difference in refractive indexes between optical unit A and optical unit B is greater than or equal to 2, the difference in refractive indexes between optical unit A and optical unit C is greater than or equal to 2, and the difference in refractive indexes between optical unit B and optical unit C is greater than or equal to 2.

[0048] Of course, the first optical layer 11 can also include four or more optical units. At this time, the difference in refractive indexes between any two optical units is greater than or equal to the preset threshold. That is, when the first optical layer includes at least two optical units, the difference in refractive indexes between any two optical units is greater than or equal to the preset threshold.

[0049] It should be noted that the second optical layer 12 can also include more than two optical units, and the difference in refractive indexes between any two optical units is greater than or equal to the preset threshold.

[0050] In addition, in the implementation of the present application, both the first optical unit and the second optical unit can be made of one or more of silicon dioxide, silicon nitride, titanium dioxide, or gallium nitride. That is, any optical unit can be made of one or more of silicon dioxide, silicon nitride, titanium dioxide, or gallium nitride. At this time, when the first optical unit can be made of silicon dioxide, the second optical unit can be made of silicon nitride. When the first optical layer includes three optical units, at this time, the first optical unit can be made of silicon dioxide, the second optical unit can be made of silicon nitride, and the last optical unit can be made of titanium dioxide.

[0051] In addition, in the embodiments of the present application, both the first optical unit and the second optical unit can be in the shape of a quadrangular prism.

[0052] When the first optical unit and the second optical unit are in the shape of a quadrangular prism, at this time, when splicing the first optical unit and the second optical unit to form the first optical layer 11, it is convenient for splicing.

[0053] In addition, in some embodiments, the length range, width range, and height range of the quadrangular prism structure can all be from 10 nanometers to 200 nanometers, and the height direction of the quadrangular prism structure is the same as the thickness direction of the beam splitter 10. That is, the length range, width range, and height range of the first optical unit and the second optical unit can all be from 10 nanometers to 200 nanometers. That is to say, the size range of the quadrangular prism structure in any direction is from 10 nanometers to 200 nanometers.

[0054] When the length range, width range, and height range of the first optical unit and the second optical unit can all be from 10 nanometers to 200 nanometers, at this time, the volumes of the first optical unit and the second optical unit are small, so that the first optical layer 11 can be formed by the relatively small first optical unit and the second optical unit, and the refractive indices of the first optical unit and the second optical unit are different. In addition, the second optical layer includes a third optical unit and a fourth optical unit. Both the first optical unit and the second optical unit can be in the shape of a quadrangular prism. The length range, width range, and height range of the quadrangular prism structure can all be from 10 nanometers to 200 nanometers, and the height direction of the quadrangular prism structure is the same as the thickness direction of the beam splitter 10. That is, the length range, width range, and height range of the first optical unit and the second optical unit can all be from 10 nanometers to 200 nanometers. Thus, when the incident light passes through the first optical layer 11 and the second optical layer 12, the incident light can be refracted better, which is beneficial for the beam splitter 10 to split the incident light into three or four bands of light beams when the incident light passes through the beam splitter 10.

[0055] For example, as Figure 4As shown, the height of the first optical unit can be H2, where the range of H2 can be from 10 nanometers to 200 nanometers. The length of the first optical unit can be L2, where the range of L2 can be from 10 nanometers to 200 nanometers. The width of the first optical unit can be D2, where the range of D2 can be from 10 nanometers to 200 nanometers.

[0056] In addition, in practical applications, the height of the first optical unit or the second optical unit can be any value within the range of 10 nanometers to 200 nanometers. For example, the height of the first optical unit can be 10 nanometers, or it can also be 20 nanometers, or it can also be 40 nanometers, or it can also be 80 nanometers, or it can also be 140 nanometers, or it can also be 180 nanometers, or it can also be 200 nanometers. The length of the first optical unit can be any value within the range of 10 nanometers to 200 nanometers. For example, the length of the first optical unit can be 10 nanometers, or it can also be 20 nanometers, or it can also be 40 nanometers, or it can also be 80 nanometers, or it can also be 140 nanometers, or it can also be 180 nanometers, or it can also be 200 nanometers. The width of the first optical unit can be any value within the range of 10 nanometers to 200 nanometers. For example, the width of the first optical unit can be 10 nanometers, or it can also be 20 nanometers, or it can also be 40 nanometers, or it can also be 80 nanometers, or it can also be 140 nanometers, or it can also be 180 nanometers, or it can also be 200 nanometers.

[0057] It should be noted that in the embodiments of the present application, the size of the third optical unit can be the same as that of the first optical unit, that is, the length, width, and height of the third optical unit are equal to the length, width, and height of the first optical unit.

[0058] In addition, in some embodiments, the thickness range of the beam splitter 10 can be from 1 micrometer to 10 micrometers. The thickness of the beam splitter 10 is the distance between the surface facing away from the photodiode and the surface facing the photodiode.

[0059] When the thickness range of the beam splitter is from 1 micrometer to 10 micrometers, at this time, the thickness of the beam splitter is relatively small, which can make the volume of the pixel structure relatively small. Therefore, when applying the pixel structure to an image sensor chip, it is beneficial to reduce the thickness of the image sensor chip.

[0060] In addition, in some embodiments, the beam splitter 10 can also be a cube structure. The height range of the optical layer is from 1 micrometer to 10 micrometers, and the length range and width range of the optical layer are both from 0.8 micrometer to 10 micrometers. Among them, the height of the beam splitter 10 is the distance between the surface facing away from the photodiode 20 and the surface facing the photodiode 20.

[0061] When the height range of the beam splitter 10 is from 1 μm to 10 μm, and the length range and the width range are both from 0.8 μm to 10 μm, at this time, the volume of the beam splitter 10 is small, so that the volume of the pixel structure is small. Therefore, when applying the pixel structure to an image sensor chip, it is beneficial to reduce the thickness of the image sensor chip.

[0062] For example, as Figure 2 shown, the beam splitter 10 is a cuboid structure. The height of the optical structure layer is H1, and the range of H1 is from 1 μm to 10 μm. The length of the optical structure layer is L1, and the range of L1 is from 0.8 μm to 10 μm. The width of the optical structure layer is D1, and the range of D1 is from 0.8 μm to 10 μm.

[0063] In addition, in practical applications, the height of the beam splitter 10 can be any value from 1 μm to 10 μm. For example, the height of the beam splitter 10 can be 1 μm, or 2 μm, or 4 μm, or 8 μm, or 10 μm. The length of the beam splitter 10 can be any value from 0.8 μm to 10 μm. For example, the length of the beam splitter 10 can be 0.8 μm, or 2 μm, or 4 μm, or 8 μm, or 10 μm. The width of the beam splitter 10 can be any value from 0.8 μm to 10 μm. For example, the width of the beam splitter 10 can be 0.8 μm, or 2 μm, or 4 μm, or 8 μm, or 10 μm.

[0064] In addition, in the embodiments of the present application, the beam splitter 10 can also be other structures. For example, the beam splitter 10 can also be formed into a trapezoidal structure, a cylindrical structure, a quadrangular prism structure, etc. by a single-layer structure. The specific shape of the beam splitter 10 is not limited in the embodiments of the present application.

[0065] In the embodiment of the present application, since the beam splitter 10 includes a first optical layer 11 and a second optical layer 12 which are stacked, the first optical layer 11 includes a first light-transmitting region and a second light-transmitting region, and the second optical layer 12 includes a third light-transmitting region and a fourth light-transmitting region. Among them, the transmittances of the first light-transmitting region and the second light-transmitting region are different, and the transmittances of the third light-transmitting region and the fourth light-transmitting region are different. In the direction perpendicular to the first optical layer, the projections of the first light-transmitting region and the third light-transmitting region do not overlap. Therefore, after the incident light irradiates on the beam splitter 10, the incident light will pass through the beam splitter 10, and the incident light will be divided into multiple beams of different wavelength bands. Since the beam splitter 10 faces the light-receiving surface, and the light-receiving surface includes a plurality of light-receiving regions 21, after the incident light is divided into multiple beams of different wavelength bands, the beams of different wavelength bands will respectively irradiate on the light-receiving regions 21 corresponding to the beams. In the embodiment of the present application, by providing the beam splitter 10, the beam splitter 10 can divide the incident light into multiple beams of different wavelength bands, so that the beams of different wavelength bands respectively irradiate on the light-receiving regions 21 corresponding to the beams, thereby avoiding partial light of the beam irradiating on the light-receiving region 21 being filtered by the filter 200, resulting in loss of the energy of the incident light, and thus the energy of the incident light received by the light-receiving region 21 can be increased, making the conversion efficiency of the photodiode 20 higher.

[0066] The embodiment of the present application provides an image sensor chip, which includes a plurality of pixel structures in any one of the above embodiments, and the plurality of pixel structures are closely arranged.

[0067] Among them, the image sensor chip includes a setting surface, a plurality of pixel structures are closely arranged on the setting surface, and the photodiode of each pixel structure is disposed on the setting surface. In addition, when a plurality of pixel structures are closely arranged on the setting surface of the image sensor chip, after the light irradiates on the image sensor, the light first irradiates on the beam splitter of each pixel structure, and the beam splitter divides the incident light into multiple beams of different wavelength bands, so that the beams of different wavelength bands respectively irradiate on the light-receiving regions corresponding to the beams, thereby avoiding partial light of the beam irradiating on the light-receiving region being filtered by the filter, resulting in loss of the energy of the incident light, and thus the energy of the incident light received by the light-receiving region can be increased, making the conversion efficiency of the photodiode higher, and thus the conversion efficiency of the image sensor chip can be improved.

[0068] It should be noted that the close arrangement of a plurality of pixel structures means that a plurality of pixel structures are arranged on the setting surface of the image sensor in an adjacent manner, that is, any one pixel structure is adjacent to at least one other pixel structure.

[0069] The embodiment of the present application provides a camera module, which includes the image sensor in the above embodiment.

[0070] Among them, the camera module may include a housing, a lens assembly, a filter, a circuit board, and an image sensor. The lens assembly and the filter are both located in the housing, and the lens assembly and the filter are spaced apart. The circuit board is disposed on a side of the filter facing away from the lens assembly, and the image sensor is disposed on the circuit board. The image sensor is located in the housing and faces the filter. Thus, light can pass through the lens assembly, and then the light irradiates on the filter. Then, the light passing through the filter irradiates on the image sensor, that is, the light passing through the filter first irradiates on the beam splitter and then irradiates on the photodiode. Thus, the photodiode converts the optical signal of the light into an electrical signal.

[0071] In addition, when the light irradiates on the beam splitter, the beam splitter divides the incident light into multiple beams of different wavelength bands, so that the beams of different wavelength bands respectively irradiate on the light-receiving regions corresponding to the beams, thereby increasing the incident light energy received by the light-receiving regions, making the conversion efficiency of the photodiode higher, thereby improving the conversion efficiency of the image sensor chip, and ultimately improving the shooting effect of the camera module.

[0072] The embodiment of the present application provides an electronic device, which includes a housing and the camera module in the above embodiment, and a part of the structure of the camera module is embedded in the housing.

[0073] When shooting with the electronic device, light will pass through the light-transmitting component in the camera module, and then the light irradiates on the filter. Then, the light passing through the filter will irradiate on the image sensor, that is, the light passing through the filter first irradiates on the beam splitter and then irradiates on the photodiode. Thus, the photodiode converts the optical signal of the light into an electrical signal. The beam splitter can divide the incident light into multiple beams of different wavelength bands, so that the beams of different wavelength bands respectively irradiate on the light-receiving regions corresponding to the beams, thereby increasing the incident light energy received by the light-receiving regions, making the conversion efficiency of the photodiode higher, thereby improving the conversion efficiency of the image sensor chip, and ultimately improving the shooting effect of the camera module, and thus improving the performance of the electronic device.

[0074] It should be noted that in the embodiment of the present application, the electronic device includes but is not limited to mobile phones, laptop computers, smart watches, etc. In addition, the camera module can be a front camera of the electronic device or a rear camera of the electronic device. In this regard, the embodiment of the present application does not make any limitations here.

[0075] It should be noted that each embodiment in this specification is described in a progressive manner. The key points of each embodiment are the differences from other embodiments. The same and similar parts among the embodiments can be referred to each other.

[0076] Although alternative embodiments of the embodiments of the present application have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concept. Therefore, the appended claims are intended to be construed to include alternative embodiments and all changes and modifications that fall within the scope of the embodiments of the present application.

[0077] Finally, it should also be noted that in this text, relational terms such as first and second are only used to distinguish one entity from another, and do not necessarily require or imply any such actual relationship or order between these entities. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that an article or terminal device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such article or terminal device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the article or terminal device comprising the element.

[0078] The technical solutions provided in the present application have been introduced in detail above. Specific examples have been used in this text to elaborate on the principles and implementation manners of the present application. At the same time, for those of ordinary skill in the art, according to the principles and implementation manners of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A pixel structure, characterized in that, The pixel structure includes: a beam splitter and a photodiode; The photodiode includes a light-receiving surface, the light-receiving surface includes a plurality of light-receiving regions, and the beam splitter faces the light-receiving surface; The beam splitter includes a stacked first optical layer and a second optical layer, the first optical layer includes a first light-transmitting region and a second light-transmitting region, and the second optical layer includes a third light-transmitting region and a fourth light-transmitting region; Wherein, the transmittances of the first light-transmitting region and the second light-transmitting region are different, the transmittances of the third light-transmitting region and the fourth light-transmitting region are different, in a direction perpendicular to the first optical layer, the projections of the first light-transmitting region and the third light-transmitting region do not overlap, the projections of the second light-transmitting region and the fourth light-transmitting region do not overlap, incident light forms light beams of different wavelength bands through the beam splitter, and the light beams of different wavelength bands are respectively received by corresponding light-receiving regions; The first light-transmitting region includes a plurality of first optical units, the second light-transmitting region includes a plurality of second optical units, the first optical units and the second optical units have the same shape and equal size, and the transmittances of the first optical units and the second optical units are different; Wherein, the first optical layer includes at least two types of optical units, and the difference in refractive index between any two types of optical units is greater than or equal to a preset threshold.

2. The pixel structure according to claim 1, characterized in that, Both the first optical unit and the second optical unit are in the structure of a quadrangular prism.

3. The pixel structure according to claim 2, wherein The size range of the quadrangular prism structure in any direction is 10 nanometers to 200 nanometers.

4. The pixel structure according to claim 1, wherein When the incident light is visible light, the incident light forms three light beams of different wavelength bands through the beam splitter; When the incident light includes visible light and invisible light, the incident light forms four light beams of different wavelength bands through the beam splitter.

5. The pixel structure according to claim 1, wherein The thickness range of the beam splitter is 1 micrometer to 10 micrometers, and the thickness of the beam splitter is the distance between the surface facing away from the photodiode and the surface facing the photodiode.

6. The pixel structure according to claim 1, wherein Both the first optical unit and the second optical unit are made of one or more of silicon dioxide, silicon nitride, titanium dioxide, or gallium nitride.

7. An image sensor chip, characterized in that, The image sensor chip includes a plurality of pixel structures according to any one of claims 1-6, and the plurality of pixel structures are closely arranged.

8. A camera module, characterized in that, An image sensor chip including the one according to claim 7.

9. An electronic device, characterized in that, Including a housing and a camera module according to claim 8, and a part of the structure of the camera module is embedded in the housing.

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