Actively driven inorganic light emitting diode display and lighting device and manufacturing method thereof

Abstract

This patent discloses an active driving device using a gate wrapping structure to drive an inorganic light emitting diode display and lighting device and a manufacturing method thereof, which can effectively reduce the area occupied by the active driving circuit and increase the effective display area of ​​the inorganic light emitting diode light emitting device.

Description

Technical Field

[0001] The present invention relates to an active driving inorganic light emitting diode display and lighting device and a manufacturing method thereof, in particular to an active driving device driving inorganic light emitting diode display and lighting device using a grid wrapping structure and a manufacturing method thereof. Background Art

[0002] The mainstream technology of inorganic light-emitting diode display at present is the bonding technology of silicon-based substrate integrated circuit and inorganic light-emitting diode array. In addition to the above technology, there is also a method of making a driving circuit using the functional layer of inorganic light-emitting diode. The advantage of this technology is that the process is simple and can overcome the alignment problem of bonding technology, but the disadvantage is that the driving circuit occupies the effective display area of ​​the inorganic light-emitting diode. Summary of the invention

[0003] The present invention provides an active driving device with a gate wrapping structure (ie, a fin-type structure) for driving an inorganic light-emitting diode display and lighting device and a manufacturing method thereof.

[0004] According to one aspect of the present invention, active materials and ohmic contact layer materials are selectively grown from inorganic materials according to the patterns previously formed on the substrate, and then the channel and ohmic contact layer are formed using photolithography technology.

[0005] According to one aspect of the present invention, the method of forming a channel and an ohmic contact layer using photolithography technology can adopt a two-direction, three-direction or isotropic etching method, for example, the etching rate in each direction is the same or almost the same, or the X and Y directions, the X and Z directions, and the Y and Z directions are basically the same or almost the same.

[0006] The positive effects of the present invention are:

[0007] Active drive devices using a gate wrapping structure can effectively reduce the area occupied by the drive circuit, that is, increase the effective display area of ​​the pixel. At the same time, by using the pattern formed on the substrate, the inorganic material selectively grows the active material and the ohmic contact layer material, which can form an ohmic contact layer wrapping structure and increase the drive current. It can be widely used in the fields of display, lighting and communication. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1-Figure 6 The manufacturing process of an active driver device driving an inorganic light-emitting diode display and lighting device with a gate wrapping structure is shown.

[0009] Figure 1 A schematic diagram showing the structure of a substrate.

[0010] Figure 2 Schematic diagram showing the structure of making thin film material on a substrate.

[0011] Figure 3 A schematic diagram showing a structure in which an opening is formed on a thin film material by photolithography.

[0012] Figure 4 A schematic diagram showing a structure in which inorganic materials are selectively grown using a pattern formed on a substrate.

[0013] Figure 5 It is a schematic diagram showing a structure in which a conductive layer (ie, an ohmic contact layer of an active driving device) is exposed by a photolithography method, and then a channel semiconductor layer (ie, an active layer of an active driving device) is exposed by a photolithography method.

[0014] Figure 6 A schematic diagram of the structure of an active driving device showing the manufacturing of a gate insulating layer and a gate to form a gate wrapping structure.

[0015] Figure 7 express Figure 4 A-A' cross-sectional view.

[0016] Figure 8 express Figure 5 B-B' cross-section diagram.

[0017] Fig. 9 express Figure 6 C-C' cross-section diagram.

[0018] Fig.10 A schematic diagram showing the structure of an active driver device with a gate wrapping structure driving an inorganic light emitting diode display device. DETAILED DESCRIPTION

[0019] The specific implementation of the present invention will be described below with reference to the accompanying drawings.

[0020] Embodiment 1

[0021] The substrate can be either sapphire or silicon. Figure 1 A schematic diagram showing the structure of the substrate,

[0022] A thin film material is made on a substrate, and the thin film material may be silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide or the like. Figure 2 A schematic diagram showing the structure of making a thin film material on a substrate,

[0023] Semiconductor photolithography is used to etch the thin film material to expose the underlying substrate. Figure 3 A schematic diagram showing a structure of forming an opening on a thin film material by photolithography.

[0024] Since the inorganic material is suitable for growing on a substrate, it grows at the corresponding position where the opening is left by etching the thin film material. Figure 4A schematic diagram showing a structure in which inorganic materials are selectively grown using a pattern formed on a substrate.

[0025] The conductive layer is exposed by photolithography, that is, the ohmic contact layer of the active drive device is formed; then the conductive layer is etched at the position corresponding to the channel by photolithography to expose the channel semiconductor layer, which is generally the intrinsic semiconductor layer, that is, the active layer of the active drive device. Figure 5 It is a schematic diagram showing a structure in which a conductive layer (ie, an ohmic contact layer of an active driving device) is exposed by a photolithography method, and then a channel semiconductor layer (ie, an active layer of an active driving device) is exposed by a photolithography method.

[0026] Make a gate insulating layer, and then use deposition technology to etch or lift-off method to make a gate electrode to complete the active drive device of the gate wrapping structure. Figure 6 .

[0027] Embodiment 2

[0028] Using the first embodiment Figure 1-Figure 6 The same manufacturing steps as represented, wherein the inorganic materials grown at the corresponding positions of the openings left by the thin film material include: unintentionally doped gallium nitride, N-type gallium nitride, gallium nitride light-emitting layer, and P-type gallium nitride, see Figure 7 ; Using photolithography to expose N-type GaN, that is, forming an ohmic contact layer of the active drive device, and then etching the N-type GaN at the position corresponding to the channel by photolithography to expose unintentionally doped GaN, that is, the active layer of the active drive device, see Figure 8 ; Make a gate insulating layer, and then use deposition technology to etch or lift-off method to make a gate electrode to complete the active drive device of the gate wrapping structure, see Fig. 9 Finally, the source and drain metal electrodes and the electrodes of the inorganic light-emitting diode display device are made, and the active driving device of the gate wrapping structure is completed to drive the inorganic light-emitting diode display device. Fig.10 .

[0029] Embodiment 3

[0030] Using the first embodiment Figure 1-Figure 6 and Example 2 Fig.10 The same production steps are shown, wherein the electrode of the inorganic light emitting diode display device is a transparent electrode, which is first transferred to a substrate, the substrate where the device is located is peeled off, and a metal electrode is made at the position where the substrate was originally peeled off to achieve light emission from one side of the electrode of the above-mentioned inorganic light emitting diode display device.

[0031] Embodiment 4

[0032] Using the first embodiment Figure 1-Figure 6 , Embodiment 2 Fig.10The same manufacturing steps as those in the third embodiment are used to manufacture color luminescent materials, including quantum dot films, fluorescent materials or absorptive materials, on the transparent electrodes of the inorganic light emitting diode display device to form a color display.

[0033] Embodiment 5

[0034] Using the first embodiment Figure 1-Figure 6 and Example 2 Fig.10 The same manufacturing steps are shown, the substrate where the device is located is peeled off, and a transparent electrode is made at the position where the substrate was originally peeled off to achieve light emission on one side of the original substrate.

[0035] Embodiment 6

[0036] Using the first embodiment Figure 1-Figure 6 , Embodiment 2 Fig.10 The same manufacturing steps as those shown in the fifth embodiment are used to manufacture a color luminescent material, including a quantum dot film, a fluorescent material or an absorptive material, on the transparent electrode at the original position of the peeled substrate to form a color display.

[0037] Embodiment 7

[0038] Using the first embodiment Figure 1-Figure 6 , Embodiment 2 Fig.10 The same production steps as those of the embodiment of the present invention, wherein the electrode of the inorganic light emitting diode display device is a transparent electrode, and quantum dots, a fluorescent film or a color absorption film are produced on the transparent electrode; the substrate where the device is located is peeled off, a transparent electrode is produced at the position where the substrate was originally peeled off, and then quantum dots, a fluorescent film or a color absorption film are produced to achieve transparent display.

[0039] Embodiment 8

[0040] Using the first embodiment Figure 1-Figure 6 , Embodiment 2 Fig.10 The same manufacturing steps as those of the present invention are as follows, except that the active driving device and the inorganic light emitting diode display device are manufactured respectively according to the corresponding patterns of the openings of the insulating layer on the substrate (ie, manufactured separately), and then connected at last.

[0041] The above describes the preferred embodiments of the present invention. It should be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit of the present invention and the scope of the claims.

Claims

1. An active-driven inorganic light-emitting diode display and lighting device, comprising an active-driven device and an inorganic light-emitting diode, characterized in that: The active driving device adopts a gate wrapping structure, one layer of material of the active driving device contains the same element as one layer of material of the inorganic light emitting diode or one layer of material of the active driving device is the same as one layer of material of the inorganic light emitting diode; the length or width of the active layer material of the active driving device is limited by epitaxial growth.

2. The active-driven inorganic light-emitting diode display and lighting device according to claim 1, characterized in that: The ohmic contact layer of the active driving device wraps the active layer thereof.

3. The active-driven inorganic light-emitting diode display and lighting device according to claim 1, characterized in that: The ohmic contact layer of the active driving device is formed by ion implantation.

4. The active-driven inorganic light-emitting diode display and lighting device according to claim 1, characterized in that: The method of forming the channel and the ohmic contact layer by using photolithography technology adopts a two-direction, three-direction or isotropic etching method, that is, the etching rate in each direction or in the X, Y, and Z directions is basically the same or almost the same.

5. The active-driven inorganic light-emitting diode display and lighting device according to any one of claims 1 to 4, wherein the manufacturing method thereof comprises: (1) Forming a pattern of inorganic material growth by making an insulating layer on a substrate; (2) depositing an inorganic material on the substrate, wherein the inorganic material selectively grows according to the pattern previously formed on the substrate; (3) forming a channel layer and an ohmic contact layer of a driving circuit on the inorganic material by a semiconductor photolithography process; (4) Making metal electrodes and completing the gate wrapping structure and source and drain electrodes; (5) Complete the connection between the gate-wrapped active driver and the inorganic light-emitting diode.

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