Electronic device substrate, manufacturing method thereof, and electronic device

Abstract

The present disclosure provides an electronic device substrate, comprising a base substrate and a quantum dot pattern layer formed on the base substrate. The quantum dot pattern layer includes at least one quantum dot pattern, the quantum dot pattern including a matrix and quantum dots dispersed within the matrix. The matrix includes a main matrix portion and a repair matrix portion formed on the main matrix portion, wherein material molecules of the repair matrix portion are mutually bonded to material molecules of the main matrix portion. The present disclosure also provides an electronic device and a method for manufacturing an electronic device substrate.

Description

Technical Field

[0001] The present disclosure relates to the field of electronic devices having quantum dot materials, and in particular, to an electronic device substrate, an electronic device including the electronic device substrate, and a method for manufacturing the electronic device substrate. Background Art

[0002] The light-emitting layer of quantum dot light-emitting diodes is made of quantum dot materials, and the technology for preparing high-resolution quantum dot light-emitting diode display devices through patterning processes is becoming increasingly mature.

[0003] However, there are problems in quantum dot light emitting diode display panels, such as leakage of quantum dot light emitting diodes and short service life of the quantum dot light emitting diode display panels. Summary of the Invention

[0004] An object of the present disclosure is to provide an electronic device substrate, an electronic device including the electronic device substrate, and a method for manufacturing the electronic device substrate.

[0005] As a first aspect of the present disclosure, an electronic device substrate is provided, comprising a base substrate and a quantum dot graphic layer formed on the base substrate, wherein the quantum dot graphic layer comprises at least one quantum dot graphic, the quantum dot graphic comprises a matrix and quantum dots dispersed in the matrix, the matrix comprises a main matrix portion and a repair matrix portion formed on the main matrix portion, and material molecules of the repair matrix portion are bonded to material molecules of the main matrix portion.

[0006] Optionally, the material molecules of the repair matrix portion and the material molecules of the main matrix portion are adsorbed and combined with each other through intermolecular forces.

[0007] Optionally, the material molecules of the repairing matrix portion and the material molecules of the main matrix portion are cross-linked with each other, so that the material molecules of the repairing matrix portion and the material molecules of the main matrix portion are combined with each other.

[0008] Optionally, the material of the repair base portion is a thermoplastic, alcohol-soluble polymer material, and the molecular formula of the material of the repair base portion is between 10,000 and 100,000.

[0009] Optionally, the material of the repair base portion includes at least one of polyethylene glycol, polyethylene glycol derivatives, polyvinyl alcohol, polyvinyl alcohol derivatives, polyethylene oxide, polyethylene oxide derivatives, polydimethoxysiloxane, polydimethoxysiloxane derivatives, polyacrylamide, polyacrylamide derivatives, ethylene-vinyl acetate copolymer, ethylene-vinyl acetate copolymer derivatives, and urea-formaldehyde resin.

[0010] As a second aspect of the present disclosure, an electronic device is provided. The electronic device includes an electronic device substrate. The electronic device substrate is the electronic device substrate provided in the first aspect of the present disclosure.

[0011] As a third aspect of the present disclosure, a method for manufacturing an electronic device substrate is provided, wherein the manufacturing method comprises:

[0012] providing a substrate;

[0013] forming a sacrificial layer;

[0014] forming a photoresist layer;

[0015] performing a patterning process on the photoresist layer and the sacrificial layer to form a pattern opening, wherein the pattern opening penetrates the photoresist layer and the sacrificial layer;

[0016] forming an initial quantum dot pattern layer in the pattern opening, wherein the initial quantum dot material layer includes at least one initial quantum dot pattern, and the quantum dot pattern includes a main matrix portion and quantum dots dispersed in the main matrix portion;

[0017] removing the sacrificial layer and the material layer formed on the sacrificial layer by ultrasonic vibration;

[0018] Applying a repair material liquid on the initial quantum dot pattern layer;

[0019] The initial quantum dot graphic layer coated with the repair material liquid is heated to solidify the repair material liquid and obtain a final quantum dot graphic layer, wherein the final quantum dot graphic includes a final quantum dot graphic obtained from the initial quantum dot graphic, the final quantum dot graphic includes a matrix and quantum dots dispersed in the matrix, the matrix includes a main matrix portion and a repair matrix portion formed on the main matrix portion and formed by the repair material liquid, and the material molecules of the repair matrix portion are combined with the material molecules of the main matrix portion.

[0020] Optionally, the material of the repair material liquid is a thermoplastic, alcohol-soluble polymer material, and the material molecular formula of the repair material liquid is between 10,000 and 100,000.

[0021] Optionally, the material of the repair material liquid includes at least one of polyethylene glycol, polyethylene glycol derivatives, polyvinyl alcohol, polyvinyl alcohol derivatives, polyethylene oxide, polyethylene oxide derivatives, polydimethoxysiloxane, polydimethoxysiloxane derivatives, polyacrylamide, polyacrylamide derivatives, ethylene-vinyl acetate copolymer, ethylene-vinyl acetate copolymer derivatives, and urea-formaldehyde resin.

[0022] Optionally, the sacrificial layer is made of polyvinyl pyrrolidone. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0024] Figure 1 This is a flow chart of the patterning of a quantum dot layer when manufacturing a display panel in the related art;

[0025] Figure 2 is a structural schematic diagram of an electronic device substrate provided by the first aspect of the present disclosure;

[0026] Figure 3 It is a flow chart of a method for manufacturing an electronic device substrate provided in the third aspect of the present disclosure. DETAILED DESCRIPTION

[0027] The following describes the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not intended to limit the present invention.

[0028] When manufacturing a display panel, the quantum dot layer needs to be patterned to obtain a light-emitting layer of multiple quantum dot light-emitting diodes. Figure 1 , which is a process for patterning a quantum dot layer when manufacturing a display panel in the related art, specifically, the process includes:

[0029] Providing an initial substrate including a base substrate 110, a first electrode 120, a sacrificial layer 130 and a photoresist layer 140;

[0030] Expose and develop the photoresist layer 140 to obtain a first pattern opening 141;

[0031] The sacrificial layer 130 is dry-etched, and a second pattern opening 131 is obtained on the basis of the first pattern opening 141, wherein the first pattern opening and the second pattern opening together form a pattern opening A;

[0032] A quantum dot pattern 150 is provided in the pattern opening A;

[0033] The sacrificial layer 120 and the photoresist layer 130 formed on the sacrificial layer 120 are removed by ultrasonic vibration;

[0034] A second electrode is formed.

[0035] The inventors of the present disclosure have discovered that during ultrasonic vibration, not only is the suitable sacrificial layer 120 shattered, but some quantum dots in the quantum dot pattern 150 also fall off from its matrix, forming cracks and defects on the surface of the quantum dot pattern 150. When the quantum dot light-emitting diode including the quantum dot pattern 150 emits light, current passes through the cracks and defects, causing leakage, thereby reducing the service life of the quantum dot light-emitting diode.

[0036] In view of this, as one aspect of the present disclosure, an electronic device substrate is provided, such as Figure 2 As shown, the electronic device substrate includes a base substrate 110 and a quantum dot pattern layer formed on the base substrate, wherein the quantum dot pattern layer includes at least one quantum dot pattern 150, and the quantum dot pattern 150 includes a matrix 151 and quantum dots 152 dispersed in the matrix 151. The matrix 151 includes a main matrix portion 151a and a repair matrix portion 151b formed on the main matrix portion 151a, and the material molecules of the repair matrix portion 151b are bonded to the material molecules of the main matrix portion 151a.

[0037] In the electronic device substrate provided herein, the material molecules of the repair base portion 151b are bonded to the material molecules of the main base portion 151a. Therefore, the repair base portion 151b can repair defects caused by quantum dots falling off the main base portion during ultrasonic processing. Therefore, when a quantum dot pattern 150 includes a first electrode on one side and a second electrode on the other side to form a quantum dot light-emitting diode (LED), the quantum dot LED will not leak electricity when emitting light, thereby improving the service life of the LED including the quantum dot pattern.

[0038] In the present disclosure, there is no particular limitation on the mechanism by which the material molecules of the repair base portion 151 b are combined with the material molecules of the main base portion 151 a .

[0039] As an optional embodiment, the material molecules of the repair base portion 151 b and the material molecules of the main base portion 151 a are adsorbed and bonded to each other through intermolecular forces (eg, forming hydrogen bonds).

[0040] As another optional embodiment, the material molecules of the repair base portion 151b and the material molecules of the main base portion 151a are cross-linked with each other, so that the material molecules of the repair base portion 151b and the material molecules of the main base portion 151a are combined with each other.

[0041] In the present disclosure, there is no special limitation on the material of the repair base portion 151b. For example, the material of the repair base portion 151b is a thermoplastic, alcohol-soluble polymer material, and the molecular formula of the material of the repair base portion 151b is between 10,000 and 100,000.

[0042] Further optionally, the material of the repair base portion 151b includes at least one of polyethylene glycol (chemical formula a), polyethylene glycol derivatives, polyvinyl alcohol (chemical formula b), polyvinyl alcohol derivatives, polyethylene oxide (chemical formula c), polyethylene oxide derivatives, polydimethoxysiloxane (chemical formula d), polydimethoxysiloxane derivatives, polyacrylamide (chemical formula e), polyacrylamide derivatives, ethylene-vinyl acetate copolymer (chemical formula f), ethylene-vinyl acetate copolymer derivatives, and urea-formaldehyde resin (chemical formula g).

[0043]

[0044] In this disclosure, the specific structure of the electronic device substrate is not particularly limited. For example, the electronic device substrate may be a display substrate for a display panel, or a lighting substrate for a lighting device. Regardless of the embodiment, the electronic device substrate includes a quantum dot light-emitting diode, and accordingly, the quantum dot patterned layer 150 is the quantum dot light-emitting layer of the quantum dot light-emitting diode.

[0045] As a second aspect of the present disclosure, an electronic device includes an electronic device substrate, wherein the electronic device substrate is the electronic device substrate provided in the first aspect of the present disclosure.

[0046] As an optional implementation, the electronic device may be a display panel or a lighting device.

[0047] As a third aspect of the present disclosure, a method for manufacturing an electronic device substrate is provided, wherein, as Figure 3 As shown, the manufacturing method includes:

[0048] In step S110, a base substrate is provided;

[0049] In step S120, a sacrificial layer is formed;

[0050] In step S130, a photoresist layer is formed;

[0051] In step S140, the photoresist layer and the sacrificial layer are patterned to form a pattern opening, wherein the pattern opening penetrates the photoresist layer and the sacrificial layer;

[0052] In step S150, an initial quantum dot pattern layer is formed in the pattern opening, wherein the initial quantum dot material layer includes at least one initial quantum dot pattern, and the quantum dot pattern includes a main matrix portion and quantum dots dispersed in the main matrix portion;

[0053] In step S160, the sacrificial layer and the material layer formed on the sacrificial layer are removed by ultrasonic vibration;

[0054] In step S170, a repair material liquid is applied on the initial quantum dot pattern layer;

[0055] In step S180, the initial quantum dot graphic layer coated with the repair material liquid is heated so that the repair material liquid is solidified, and a final quantum dot graphic layer is obtained, wherein the final quantum dot graphic includes a final quantum dot graphic obtained from the initial quantum dot graphic, and the final quantum dot graphic includes a matrix and quantum dots dispersed in the matrix, and the matrix includes a main matrix portion and a repair matrix portion formed on the main matrix portion and formed by the repair material liquid, and the material molecules of the repair matrix portion are combined with the material molecules of the main matrix portion.

[0056] The manufacturing method provided by the present disclosure can be used to manufacture the electronic device substrate provided by the first aspect of the present disclosure. After step S160, gaps and defects are formed on the initial quantum dot pattern layer. After the repair material liquid is applied to the initial quantum dot pattern layer, the repair material liquid penetrates into the gaps and defects, and through the heating step in step S180, the repair material liquid fully extends in the gaps and defects, and the molecules of the repair material liquid and the molecules of the main matrix part generate a force or chemical cross-linking. Finally, the material molecules of the repair matrix part formed by the repair material liquid and the material molecules of the main matrix part are combined with each other, filling the gaps, defects, etc., forming a dense area (i.e., the repair matrix part), blocking the current from passing through the defects.

[0057] In the present disclosure, steps S150 to S180 are performed at least once.

[0058] When the electronic device substrate is a display substrate, and the display substrate includes quantum dot light-emitting layers of multiple colors, steps S150 to S180 may be repeated multiple times.

[0059] For example, when the display substrate includes a red quantum dot light-emitting layer, a green quantum dot light-emitting layer, and a blue quantum dot light-emitting layer, steps S150 to S180 may be performed three times in a cycle. In the first cycle, the red quantum dot light-emitting layer is formed, in the second cycle, the green quantum dot light-emitting layer is formed, and in the third cycle, the blue quantum dot light-emitting layer is formed.

[0060] Accordingly, the step S110 of providing a substrate may include:

[0061] providing a glass substrate;

[0062] forming a first electrode layer on a glass substrate;

[0063] forming a pixel defining layer, wherein the pixel defining layer includes a plurality of pixel openings;

[0064] An electron transport layer is formed in each pixel opening.

[0065] The plurality of pixel openings correspond to the “pattern openings” described above. The electron transport layer may be made of zinc oxide.

[0066] In step S170 , the substrate after step S160 may be directly immersed in the repair material liquid.

[0067] In the present disclosure, the repair material liquid may be an ethanol solution of the repair material, and the solid content of the solution is between 10 wt % and 20 wt %.

[0068] As described above, the material of the repair material liquid can be a thermoplastic, alcohol-soluble polymer material, and the material molecular formula of the repair material liquid is between 10,000 and 100,000.

[0069] Optionally, the material of the repair material liquid includes at least one of polyethylene glycol, polyethylene glycol derivatives, polyvinyl alcohol, polyvinyl alcohol derivatives, polyethylene oxide, polyethylene oxide derivatives, polydimethoxysiloxane, polydimethoxysiloxane derivatives, polyacrylamide, polyacrylamide derivatives, ethylene-vinyl acetate copolymer, ethylene-vinyl acetate copolymer derivatives, and urea-formaldehyde resin.

[0070] In the present disclosure, there are no specific restrictions on the specific material of the sacrificial layer. For example, the sacrificial layer is made of polyvinyl pyrrolidone. In the present disclosure, there are specific restrictions on how to form the sacrificial layer. For example, the sacrificial layer can be obtained by spin-coating an ethanol solution of zinc oxide nanoparticles on an initial substrate to obtain an initial layer, and then annealing the initial layer.

[0071] In the present disclosure, step S140 is not particularly limited. As an optional implementation, step S140 may include:

[0072] exposing and developing the photoresist layer to obtain a first pattern opening;

[0073] The sacrificial layer is dry-etched, and a second graphic opening is obtained on the basis of the first graphic opening, wherein the first graphic opening and the second graphic opening together form a graphic opening.

[0074] In the present disclosure, the electronic device substrate may be a display substrate. After forming the quantum dot pattern layer, the manufacturing method may further include:

[0075] forming a hole transport layer;

[0076] A second electrode layer is formed.

[0077] It should be noted that step S160 is performed in a liquid environment. For example, the initial substrate after step S150 can be immersed in liquid (the liquid can be ethanol), and then ultrasonic waves are applied to the container containing the liquid to remove the sacrificial layer.

[0078] The following describes a specific embodiment of manufacturing a display substrate using the manufacturing method provided by the present disclosure:

[0079] The ITO substrate was cleaned with deionized water and ethanol in sequence, and then UV-cleaned for 10 min;

[0080] The zinc oxide nanoparticle ethanol solution was spin-coated at a spin-coating speed of 3000 rpm and annealed at 120 degrees for 10 minutes to complete the preparation of the zinc oxide film.

[0081] Then, a 15 mg / ml ethanol solution of polyvinyl pyrrolidone, the sacrificial layer material, was spin-coated at a speed of 2000 rpm and allowed to stand at room temperature for 5 minutes.

[0082] Spin-coat the negative photoresist at a speed of 4000 rpm. Expose the photoresist to 50 mJ of exposure. Develop the photoresist with xylene and blow dry with an air gun.

[0083] The sacrificial layer is etched using oxygen in the plasma process gas for 30 seconds.

[0084] Spin-coat a red CdSe / ZnS quantum dot octane solution at a concentration of 15 mg / ml, using octanethiol as the ligand, at a speed of 3000 rpm;

[0085] After spin coating, the substrate is immersed in ethanol to completely remove the sacrificial layer material, leaving behind a patterned red quantum dot film layer;

[0086] The patterned green quantum dot and blue quantum dot film layers are prepared according to the above steps;

[0087] The substrate with the patterned quantum dot film layer was placed in an ethanol solution containing the self-healing material polyethylene glycol with a solid content of 15% for 10 minutes. After the soaking was completed, the surface of the substrate was rinsed with ethanol. After the rinsing was completed, the substrate was heated to 120 degrees and annealed for 20 minutes for repair;

[0088] A 50nm hole transport layer, a 10nm hole injection layer, and a 150nm cathode metal were prepared by evaporation;

[0089] The substrate is encapsulated using UV curing adhesive and encapsulation glass.

[0090] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A method for manufacturing an electronic device substrate, characterized in that: The manufacturing method comprises: providing a substrate; forming a sacrificial layer; forming a photoresist layer; performing a patterning process on the photoresist layer and the sacrificial layer to form a pattern opening, wherein the pattern opening penetrates the photoresist layer and the sacrificial layer; forming an initial quantum dot pattern layer in the pattern opening, wherein the initial quantum dot pattern layer includes at least one initial quantum dot pattern, and the quantum dot pattern includes a main matrix portion and quantum dots dispersed in the main matrix portion; removing the sacrificial layer and the material layer formed on the sacrificial layer by ultrasonic vibration; Applying a repair material liquid on the initial quantum dot pattern layer; The initial quantum dot graphic layer coated with the repair material liquid is heated to solidify the repair material liquid and obtain a final quantum dot graphic layer, wherein the final quantum dot graphic includes a final quantum dot graphic obtained from the initial quantum dot graphic, the final quantum dot graphic includes a matrix and quantum dots dispersed in the matrix, the matrix includes a main matrix portion and a repair matrix portion formed on the main matrix portion and formed by the repair material liquid, and the material molecules of the repair matrix portion are combined with the material molecules of the main matrix portion.

2. The manufacturing method according to claim 1, characterized in that The material of the repair material liquid is a thermoplastic, alcohol-soluble polymer material, and the material molecular formula of the repair material liquid is between 10,000 and 100,000.

3. The manufacturing method according to claim 2, characterized in that The material of the repair material liquid includes at least one of polyethylene glycol, polyethylene glycol derivatives, polyvinyl alcohol, polyvinyl alcohol derivatives, polyethylene oxide, polyethylene oxide derivatives, polydimethoxysiloxane, polydimethoxysiloxane derivatives, polyacrylamide, polyacrylamide derivatives, ethylene-vinyl acetate copolymer, ethylene-vinyl acetate copolymer derivatives, and urea-formaldehyde resin.

4. The manufacturing method according to any one of claims 1 to 3, characterized in that The sacrificial layer is made of polyvinyl pyrrolidone.

5. An electronic device substrate obtained by the manufacturing method according to any one of claims 1 to 4, the electronic device substrate comprising a base substrate and a quantum dot pattern layer formed on the base substrate, characterized in that: The quantum dot graphic layer includes at least one quantum dot graphic, the quantum dot graphic includes a matrix and quantum dots dispersed in the matrix, the matrix includes a main matrix portion and a repair matrix portion formed on the main matrix portion, and the material molecules of the repair matrix portion are combined with the material molecules of the main matrix portion.

6. The electronic device substrate according to claim 5, wherein: The material molecules of the repairing matrix and the material molecules of the main matrix are adsorbed and combined with each other through intermolecular forces.

7. The electronic device substrate according to claim 5, wherein: The material molecules of the repairing matrix portion and the material molecules of the main matrix portion are cross-linked with each other, so that the material molecules of the repairing matrix portion and the material molecules of the main matrix portion are combined with each other.

8. An electronic device comprising an electronic device substrate, characterized in that: The electronic device substrate is the electronic device substrate according to any one of claims 5 to 7.

Images